TWI782396B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
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- TWI782396B TWI782396B TW110101782A TW110101782A TWI782396B TW I782396 B TWI782396 B TW I782396B TW 110101782 A TW110101782 A TW 110101782A TW 110101782 A TW110101782 A TW 110101782A TW I782396 B TWI782396 B TW I782396B
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Abstract
實施方式提供一種可抑制嵌埋有墊之絕緣膜內之缺陷之半導體裝置及其製造方法。
根據一實施方式,半導體裝置包含第1晶片、及與上述第1晶片貼合之第2晶片。上述第1晶片包含:基板;邏輯電路,其設置於上述基板上;及複數個第1虛設墊,其等配置於上述邏輯電路之上方,設置於上述第1晶片與上述第2晶片貼合之第1貼合面,且未與上述邏輯電路電性連接。上述第2晶片包含:複數個第2虛設墊,其等設置於上述複數個第1虛設墊上;及記憶單元陣列,其設置於上述複數個第2虛設墊之上方。上述第1貼合面中之上述第1虛設墊之被覆率在第1區域與第2區域互異,該第1區域與上述第1晶片之第1端邊隔開,該第2區域配置於上述第1端邊與上述第1區域之間。
Description
本發明之實施方式係關於一種半導體裝置及其製造方法。
當貼合複數個晶圓之金屬墊(metal pad)來製造半導體裝置時,於嵌埋有金屬墊之層間絕緣膜內可能產生空隙(void)等缺陷。
實施方式提供一種可抑制嵌埋有墊之絕緣膜內之缺陷之半導體裝置及其製造方法。
根據一實施方式,半導體裝置包含第1晶片、及與上述第1晶片貼合之第2晶片。上述第1晶片包含:基板;邏輯電路,其設置於上述基板上;及複數個第1虛設墊,其等配置於上述邏輯電路之上方,設置於上述第1晶片與上述第2晶片貼合之第1貼合面,且未與上述邏輯電路電性連接。上述第2晶片包含:複數個第2虛設墊,其等設置於上述複數個第1虛設墊上;及記憶單元陣列,設置於上述複數個第2虛設墊之上方。上述第1貼合面中之上述第1虛設墊之被覆率在第1區域與第2區域互異,該第1區域與上述第1晶片之第1端邊隔開,該第2區域配置於上述第1端邊與上述第1區域之間。
根據實施方式,能夠提供一種可抑制嵌埋有墊之絕緣膜內之缺陷之半導體裝置及其製造方法。
以下,參照圖式說明本發明之實施方式。圖1至圖14中,對相同構成附上相同符號,並省略重複之說明。
(第1實施方式) 圖1係表示第1實施方式之半導體裝置之構造之剖視圖。圖1之半導體裝置係貼合有陣列晶片1與電路晶片2之三維記憶體。電路晶片2為第1晶片之示例,陣列晶片1為第2晶片之示例。
陣列晶片1包含含有複數個記憶單元之記憶單元陣列11、記憶單元陣列11上之絕緣膜12、及記憶單元陣列11下之層間絕緣膜13。絕緣膜12例如為氧化矽膜或氮化矽膜。層間絕緣膜13例如為氧化矽膜或包含氧化矽膜與其他絕緣膜之積層膜。
電路晶片2設置於陣列晶片1下。符號S表示陣列晶片1與電路晶片2之貼合面。貼合面S為第1貼合面之示例。電路晶片2包含層間絕緣膜14、及層間絕緣膜14下之基板15。層間絕緣膜14例如為氧化矽膜或包含氧化矽膜與其他絕緣膜之積層膜。基板15例如為矽基板等半導體基板。
圖1示出與基板15之表面平行且相互垂直之X方向及Y方向、以及與基板15之表面垂直之Z方向。本說明書中,將+Z方向視作上方向,-Z方向視作下方向。-Z方向可與重力方向一致亦可不一致。
陣列晶片1包含複數個字元線WL、源極線SL作為記憶單元陣列11內之電極層。圖1示出記憶單元陣列11之階梯構造部21。各字元線WL經由接觸插塞22而與字元配線層23電性連接。貫通複數個字元線WL之各柱狀部CL經由通孔插塞(via plug)24而與位元線BL電性連接,且與源極線SL電性連接。源極線SL包含作為半導體層之第1層SL1及作為金屬層之第2層SL2。
電路晶片2包含複數個電晶體31。各電晶體31包含:閘極電極32,其介隔閘極絕緣膜設置於基板15上;以及未圖示之源極擴散層及汲極擴散層,其等設置於基板15內。而且,電路晶片2包含:複數個接觸插塞33,其等設置於該等電晶體31之閘極電極32、源極擴散層或汲極擴散層上;配線層34,其設置於該等接觸插塞33上且包含複數個配線;及配線層35,其設置於配線層34上且包含複數個配線。
電路晶片2進而包含:配線層36,其設置於配線層35上且包含複數個配線;複數個通孔插塞37,其等設置於配線層36上;及複數個金屬墊38,其等設置於該等通孔插塞37上。金屬墊38例如為Cu(銅)層或Al(鋁)層。金屬墊38為第1墊(第1主動墊及第1虛設墊)之示例。關於金屬墊38之詳情將在下文敍述。電路晶片2作為控制陣列晶片1之動作之控制電路(邏輯電路)發揮功能。該控制電路由電晶體31等構成,且與金屬墊38電性連接。
陣列晶片1包含設置於金屬墊38上之複數個金屬墊41、及設置於金屬墊41上之複數個通孔插塞42。而且,陣列晶片1包含:配線層43,其設置於該等通孔插塞42上且包含複數個配線;及配線層44,其設置於配線層43上且包含複數個配線。金屬墊41例如為Cu層或Al層。金屬墊41為第2墊(第2主動墊及第2虛設墊)之示例。關於金屬墊41之詳情將在下文敍述。
陣列晶片1進而包含設置於配線層44上之複數個通孔插塞45、設置於該等通孔插塞45上及絕緣膜12上之金屬墊46、以及設置於金屬墊46上及絕緣膜12上之鈍化膜47。金屬墊46例如為Cu層或Al層,並作為圖1之半導體裝置之外部連接墊(接合墊(bonding pad))發揮功能。鈍化膜47例如為氧化矽膜等絕緣膜,且具有使金屬墊46之上表面露出之開口部P。金屬墊46能夠經由該開口部P並藉由接合線、焊球、金屬凸塊等連接至安裝基板或其他裝置。
圖2係表示第1實施方式之柱狀部CL之構造之剖視圖。
如圖2所示,記憶單元陣列11包含交替地積層於層間絕緣膜13(圖1)上之複數個字元線WL及複數個絕緣層51。字元線WL例如為W(鎢)層。絕緣層51例如為氧化矽膜。
柱狀部CL依次包含阻擋絕緣膜52、電荷蓄積層53、隧道絕緣膜54、通道半導體層55及芯絕緣膜56。電荷蓄積層53例如為氮化矽膜,介隔阻擋絕緣膜52形成於字元線WL及絕緣層51之側面。電荷蓄積層53可以是多晶矽層等半導體層。通道半導體層55例如為多晶矽層,介隔隧道絕緣膜54形成於電荷蓄積層53之側面。阻擋絕緣膜52、隧道絕緣膜54及芯絕緣膜56例如為氧化矽膜或金屬絕緣膜。
圖3及圖4係表示第1實施方式之半導體裝置之製造方法之剖視圖。
圖3示出包含複數個陣列晶片1之陣列晶圓W1及包含複數個電路晶片2之電路晶圓W2。陣列晶圓W1亦被稱為「記憶體晶圓」,電路晶圓W2亦被稱為「CMOS(complementary metal oxide semiconductor,互補金屬氧化物半導體)晶圓」。電路晶圓W2為第1晶圓之示例,陣列晶圓W1為第2晶圓之示例。
注意,圖3之陣列晶圓W1之取向與圖1之陣列晶片1之取向相反。本實施方式中,藉由將陣列晶圓W1與電路晶圓W2貼合來製造半導體裝置。圖3示出為了進行貼合而反轉取向前之陣列晶圓W1,圖1示出為了進行貼合而反轉取向並進行貼合及切割後之陣列晶片1。
圖3中,符號S1表示陣列晶圓W1之上表面,符號S2表示電路晶圓W2之上表面。注意,陣列晶圓W1包含設置於絕緣膜12下之基板16。基板16例如為矽基板等半導體基板。基板15為第1基板之示例,基板16為第2基板之示例。
本實施方式中,首先,如圖3所示,於陣列晶圓W1之基板16上形成記憶單元陣列11、絕緣膜12、層間絕緣膜13、階梯構造部21、金屬墊41等,於電路晶圓W2之基板15上形成層間絕緣膜14、電晶體31、金屬墊38等。例如,於基板16上依次形成通孔插塞45、配線層44、配線層43、通孔插塞42及金屬墊41。而且,於基板15上依次形成接觸插塞33、配線層34、配線層35、配線層36、通孔插塞37及金屬墊38。接下來,如圖4所示,利用機械壓力將陣列晶圓W1與電路晶圓W2貼合。由此,層間絕緣膜13與層間絕緣膜14接著。接下來,將陣列晶圓W1及電路晶圓W2以400℃退火。由此,金屬墊41與金屬墊38接合。
然後,利用CMP(Chemical Mechanical Polishing,化學機械研磨)將基板15薄膜化,利用CMP去除基板16後,將陣列晶圓W1及電路晶圓W2切斷為複數個晶片。以此方式,製造出圖1之半導體裝置。圖1示出包含金屬墊38之電路晶片2、包含配置於金屬墊38上之金屬墊41之陣列晶片1。另外,金屬墊46與鈍化膜47例如在基板15薄膜化及基板16去除之後,形成於絕緣膜12上。
另外,本實施方式中是將陣列晶圓W1與電路晶圓W2貼合,亦可取代之,將陣列晶圓W1彼此貼合。參照圖1至圖4前述之內容或參照圖5至圖14後述之內容,亦可適用於陣列晶圓W1彼此之貼合。
而且,圖1示出層間絕緣膜13與層間絕緣膜14之邊界面及金屬墊41與金屬墊38之邊界面,一般而言,上述退火後無法再觀察到該等邊界面。然而,該等邊界面所處之位置能夠藉由例如檢測金屬墊41之側面或金屬墊38之側面之斜率、或金屬墊41之側面與金屬墊38之位移來推定。
另外,本實施方式之半導體裝置可在切斷為複數個晶片後之圖1之狀態下成為交易之對象,亦可在切斷為複數個晶片前之圖4之狀態下成為交易之對象。圖1示出晶片狀態之半導體裝置,圖4示出晶圓狀態之半導體裝置。本實施方式中,由一個晶圓狀之半導體裝置(圖4)製造出複數個晶片狀之半導體裝置(圖1)。
以下,參照圖5至圖14來說明本實施方式之電路晶圓W2之詳情,具體地說明本實施方式之金屬墊38之配置之詳情。以下之說明亦適用於本實施方式之陣列晶圓W1或本實施方式之金屬墊41之配置。
圖5係模式性地表示第1實施方式之電路晶圓W2之構造之俯視圖。
如圖5所示,本實施方式之電路晶圓W2包含配置成二維陣列狀之複數個晶片區域R1、及包圍該等晶片區域R1之切割區域R2。切割區域R2具有如下形狀,即,該形狀包含於X方向延伸之複數個切割線及於Y方向延伸之複數個切割線。圖5進而示出晶片區域R1與切割區域R2之邊界線(邊界面)E。
本實施方式之電路晶圓W2於與陣列晶圓W1貼合後被切斷為複數個晶片。此時,藉由用切割刀切斷切割區域R2而加工出電路晶圓W2。藉由切斷而獲得之各晶片包含電路晶圓R2之一個晶片區域R1及陣列晶圓R1之相同之一個晶片區域。該情況下,上述邊界面E成為各晶片之端面(端邊)。各晶片之端面包含基板15之側面及層間絕緣膜14之側面。該端邊為第1端邊之示例。
圖6係用於說明第1實施方式之電路晶圓W2之問題之剖視圖。
圖6(a)示出電路晶圓W2之晶片區域R1及切割區域R2之截面。本實施方式中,於層間絕緣膜14內嵌埋金屬墊38後,藉由CMP使金屬墊38之表面平坦化。此時,當將金屬墊38與層間絕緣膜14之大拋光速率比(polishing rate)(Cu/SiO2
)之漿料用於CMP時,擔心產生金屬墊38之表面凹進之凹陷(dishing)或晶片區域R1之表面傾斜(參照圖6(a))。
圖6(b)亦示出了電路晶圓W2之晶片區域R1及切割區域R2之截面。藉由將金屬墊38與層間絕緣膜14之拋光速率比(Cu/SiO2
)較小之漿料使用於CMP,可抑制上述凹陷或傾斜。然而,該情況下,因層間絕緣膜14變得更容易削除,故可能在金屬墊38之密度較低之區域中,會於層間絕緣膜14產生空隙。圖6(b)示出不配置金屬墊38之切割區域R2中產生之空隙V。期望抑制此種空隙V產生。
圖7係表示第1實施方式之電路晶圓W2之構造之俯視圖。圖7示出穿過電路晶圓W2內之金屬墊38之XY截面,例如,示出陣列晶圓W1與電路晶圓W2之貼合面S之XY截面。
圖7示出一個晶片區域R1及包圍該晶片區域R1之切割區域R2。如圖7所示,本實施方式之晶片區域R1包含複數個主動區域R1a、及複數個虛設區域R1b、R1c、R1d。
主動區域R1a包含被稱作主動墊之複數個金屬墊38。另一方面,虛設區域R1b、R1c、R1d包含被稱作虛設墊之複數個金屬墊38。主動墊係傳輸用以使半導體裝置動作所需的信號或電力之墊,虛設墊係非傳輸用以使半導體裝置動作所需的信號或電力之墊。主動墊與半導體裝置內之電路元件(例如記憶單元陣列11或電晶體31)電性連接,但虛設墊未與半導體裝置內之電路元件電性連接。虛設墊例如係為了調整貼合面S中之金屬墊38之密度而配置。
本實施方式之虛設區域R1b、R1c、R1d包含:虛設區域R1b,其配置於主動區域R1a之周圍;虛設區域R1c,其配置於晶片區域R1內之中心部;及虛設區域R1d,其配置於晶片區域R1內之周邊部。該等虛設區域R1b、R1c、R1d如後述般彼此以不同之密度包含金屬墊38。
接下來,對圖7所示之XY截面中之金屬墊38之被覆率進行說明。例如晶片區域R1內之金屬墊38之被覆率為晶片區域R1內之金屬墊38之總面積(Sa)相對於晶片區域R1之總面積(Sb)之百分比(%),以Sa÷Sb×100表示。金屬墊38之被覆率為相當於各區域內之金屬墊38之密度之值。
本實施方式之主動區域R1a及虛設區域R1b、R1c、R1d具有特定之被覆率。具體而言 ,主動區域R1a內之金屬墊38之被覆率為10~40%,例如為25%。而且,虛設區域R1b內之金屬墊38之被覆率為10~40%,例如為25%。而且,虛設區域R1c內之金屬墊38之被覆率為10~40%,例如約為20%。而且,虛設區域R1d內之金屬墊38之被覆率為5~20%,例如約為10%。
本實施方式之虛設區域R1d具有包圍主動區域R1a及虛設區域R1b、R1c之環狀形狀,且與切割區域R2相鄰。另一方面,本實施方式之主動區域R1a及虛設區域R1b、R1c由虛設區域R1d包圍,且與切割區域R2隔開。換言之,虛設區域R1d與邊界線E相鄰,主動區域R1a及虛設區域R1b、R1c與邊界線E隔開。
此外,本實施方式之虛設區域R1d內之金屬墊38之被覆率與主動區域R1a及虛設區域R1b、R1c內之金屬墊38之被覆率不同,更詳細而言,低於主動區域R1a及虛設區域R1b、R1c內之金屬墊38之被覆率。由此,例如,可減小切割區域R2內產生之空隙V之深度(參照圖6)。原因在於,藉由降低虛設區域R1d內之金屬墊38之被覆率,可減小虛設區域R1d與切割區域R2之間之被覆率之差,可減少邊界線E附近處之金屬墊38之密度變化。另外,本實施方式之切割區域R2包含由金屬形成之對準標記,但不包含金屬墊38,切割區域R2內之金屬墊38之被覆率為0%。虛設區域R1b、R1c為第1區域之示例,虛設區域R1d為第2區域之示例,主動區域R1a為第3區域之示例。
這樣,本實施方式之虛設區域R1d內之金屬墊38之被覆率低於主動區域R1a及虛設區域R1b、R1c內之金屬墊38之被覆率。由此,可減小切割區域R2內產生之空隙V之深度。為了有效地減小空隙V之深度,虛設區域R1c內之被覆率與虛設區域R1d內之被覆率之比理想的是設定在3:2與3:1之間。關於這一點,虛設區域R1b內之被覆率與虛設區域R1d內之被覆率之比或主動區域R1a內之被覆率與虛設區域R1d內之被覆率之比亦相同。此外,理想的是主動區域R1a及虛設區域R1b、R1c內之平均被覆率與虛設區域R1d內之被覆率之比亦設定在3:2與3:1之間。
此外,本實施方式中,虛設區域R1b內之被覆率及虛設區域R1c內之被覆率為主動區域R1a內之被覆率以下。詳細而言,與主動區域R1a相鄰之虛設區域R1b內之被覆率與主動區域R1a內之被覆率相同,與主動區域R1a隔開之虛設區域R1c內之被覆率未達主動區域R1a內之被覆率。由此,例如,可使被覆率從主動區域R1a到虛設區域R1d逐漸減小。虛設區域R1b為第1被覆率區域之示例,虛設區域R1c為第2被覆率區域之示例。
各區域內之被覆率例如藉由使金屬墊38之尺寸發生變化或使金屬墊38間之間距發生變化而改變。稍後將對本實施方式之主動區域R1a及虛設區域R1b、R1c內之金屬墊38之配置進行敍述。
圖7進而示出了虛設區域R1b與切割區域R2之間之最短距離T。最短距離T例如為5 μm以上。另一方面,具有環狀形狀之虛設區域R1d之環寬度例如通常為100 μm。圖7中,許多個虛設區域R1b被虛設區域R1c包圍,但部分虛設區域R1b從虛設區域R1c突出且與虛設區域R1d相鄰。因此,上述最短距離T可較虛設區域R1d之環寬度短。若從另一個角度來看,則虛設區域R1d之環寬度通常為100 μm,但於上述部分虛設區域R1b之附近要較100 μm短。
圖8係表示第1實施方式之主動區域R1a與虛設區域R1b之構造之俯視圖。
圖8示出主動區域R1a內之金屬墊38及虛設區域R1b內之金屬墊38。圖8中,該等金屬墊38配置成正方形或長方形之格子狀,主動區域R1a內之被覆率與虛設區域R1b內之被覆率均設定為25%。符號U表示上述格子之單位區域。一個單位區域U之面積是一個金屬墊38面積之4倍,結果,主動區域R1a及虛設區域R1b內之被覆率為25%。
圖8進而關於主動區域R1a及虛設區域R1b內之金屬墊38示出了各金屬墊38之X方向之尺寸Ax、各金屬墊38之Y方向之尺寸Ay、金屬墊38間之X方向之間距Bx、金屬墊38間之Y方向之間距By。本實施方式中,該等之關係設定為Ax=Ay、Bx=By。
圖9係表示第1實施方式之虛設區域R1c之構造之俯視圖。
圖9示出虛設區域R1c內之金屬墊38。圖9中,該等金屬墊38配置成三角形(或平行四邊形)之格子狀,虛設區域R1c內之被覆率約設定為20%。虛設區域R1c內之金屬墊38配置於與直線M1平行之複數個第1直線和與直線M2平行之複數個第2直線之交點處。第1直線相對於X方向傾斜,第2直線相對於Y方向傾斜。
圖9進而關於虛設區域R1c內之金屬墊38示出了各金屬墊38之X方向之尺寸Cx、各金屬墊38之Y方向之尺寸Cy、金屬墊38間之X方向之間距Dx、金屬墊38間之Y方向之間距Dy、金屬墊38間之X方向之位移量Ex、金屬墊38間之Y方向之位移量Ey。本實施方式中,該等之關係設定為Cx=Cy、Dy=Dz、Ex=Ey。此外,本實施方式中,將尺寸設定為Ax=Cx,間距設定為Bx≠Dx。
這樣,於虛設區域R1b與虛設區域R1c之間,金屬墊38之尺寸無論於X方向上還是於Y方向上均彼此相同,金屬墊38間之間距彼此不同。結果,金屬墊38之被覆率於虛設區域R1b與虛設區域R1c之間彼此不同。另外,於虛設區域R1b與虛設區域R1c之間,金屬墊38之尺寸可彼此不同,金屬墊38間之間距可彼此相同,由此,彼此之被覆率可不同。
本實施方式中,於主動區域R1a與虛設區域R1c之間設置有虛設區域R1b。因此,晶片區域R1內之被覆率於主動區域R1a與虛設區域R1b之間未降低,於虛設區域R1b與虛設區域R1c之間降低。由此,可抑制於主動區域R1a之端部產生空隙。另一方面,雖於虛設區域R1b與虛設區域R1c之邊界附近可能產生空隙,但虛設區域R1b與虛設區域R1c之邊界附近配置有虛設墊而未配置有主動墊。由此,可抑制空隙對主動墊造成不良影響而妨礙半導體裝置之動作。一般而言,虛設墊不會對半導體裝置之動作造成影響。
以下,對決定本實施方式之虛設區域R1c內之金屬墊38之配置之方法之示例進行說明。
本實施方式中,當決定虛設區域R1c內之金屬墊38之配置時,固定Cx(=Cy)之值後,使Ex(=Ey)之值變動為各種值。由此,因被覆率變動,故算出獲得所需被覆率之Ex之值。此時,當使被覆率變動時,直線M1及M2延伸之方向發生變化。被覆率越大,即Ex越小,直線M1相對於X軸之角度越大,直線M2相對於Y軸之角度亦越大。結果,直線M1與直線M2間之銳角θ1之角度減小。
用上述方法來決定虛設區域R1c內之金屬墊38之配置之原因在於,理想的是將直線M1及M2延伸之方向設為與X方向及Y方向不同之方向。換言之,將虛設區域R1c內之金屬墊38排列之方向與主動區域R1a及虛設區域R1b內之金屬墊38排列之方向錯開,以避免於半導體裝置內金屬墊38在相同之方向上連續排列。結果,於虛設區域R1b與虛設區域R1c之間,金屬墊38排列之方向不連續。關於這一點,虛設區域R1b與虛設區域R1c之間亦相同。原因在於,圖9之直線M1及M2延伸之方向與圖10之直線N1及N2(後述)延伸之方向不同。例如,直線N1與直線N2之間之銳角θ2(後述)之角度和直線M1與直線M2之間之銳角θ1之角度不同。
而且,避免於半導體裝置內金屬墊38在相同之方向上連續排列之原因為如下所示。
當貼合陣列晶圓W1與電路晶圓W2時,晶圓彼此之貼合(進行貼合)從各晶圓之中心部進行到端部。此處,晶圓之進行貼合之速度依存於金屬墊38、41之排列(排列方式)。
一般而言,於貼合時金屬墊38、41之表面相對於層間絕緣膜14、13之表面凹進,且晶圓彼此之貼合在不存在金屬墊38、41之方向上進行得更快(進行貼合之速度更大)。這是因為於該方向上幾乎不存在金屬墊38、41之表面,且存在許多層間絕緣膜14、13之表面。另外,藉由利用貼合後之退火處理使金屬墊38、41膨脹來貼合(接合)金屬墊38與金屬墊41。
由此,若於半導體裝置內金屬墊38在相同之方向上連續排列,則該方向上之進行貼合之速度小於其他方向上之進行貼合之速度,晶圓間進行貼合之速度不均勻。若晶圓間進行貼合之速度不均勻,則已貼合之區域會折入未貼合之區域之前端部分,結果,於晶圓間形成空隙。由於空隙阻礙金屬墊38彼此之接合,因此,若於空隙之附近存在主動區域R1a,則半導體裝置會產生缺陷不良。
以上為避免於半導體裝置內金屬墊38在相同之方向上連續排列之原因。根據本實施方式,藉由將虛設區域R1c內之金屬墊38排列之方向與主動區域R1a及虛設區域R1b內之金屬墊38排列之方向錯開,可避免於半導體裝置內金屬墊38在相同之方向上連續排列。
圖10係表示第1實施方式之虛設區域R1d之構造之俯視圖。
圖10示出虛設區域R1d內之金屬墊38。圖10中,該等金屬墊38配置成三角形(或平行四邊形)之格子狀,虛設區域R1d內之被覆率約設定為10%。虛設區域Rd內之金屬墊38配置於與直線N1平行之複數個第1直線和與直線N2平行之複數個第2直線之交點處。第1直線相對於X方向傾斜,第2直線相對於Y方向傾斜。
圖10進而關於虛設區域R1d內之金屬墊38示出了各金屬墊38之X方向之尺寸Fx、各金屬墊38之Y方向之尺寸Fy、金屬墊38間之X方向之間距Gx、金屬墊38間之Y方向之間距Gy、金屬墊38間之X方向之位移量Hx、金屬墊38間之Y方向之位移量Hy。本實施方式中,該等之關係設定為Fx=Fy、Gx=Gy、Hx=Hy。此外,本實施方式中,將尺寸設定為Cx=Fx,間距設定為Dx≠Gx。
這樣,於虛設區域R1c與虛設區域R1d之間,金屬墊38之尺寸無論於X方向上還是於Y方向上均彼此相同,金屬墊38間之間距彼此不同。結果,金屬墊38之被覆率於虛設區域R1c與虛設區域R1d之間彼此不同。另外,於虛設區域R1c與虛設區域R1d之間,金屬墊38之尺寸可彼此不同,金屬墊38間之間距亦可彼此相同,從而彼此之被覆率可為不同。
另外,當製造本實施方式之半導體裝置時,為了實現上述被覆率而於層間絕緣膜14內形成金屬墊38(參照圖3)。由此,主動區域R1a、虛設區域R1b、虛設區域R1c、虛設區域R1d內之被覆率分別設定為25%、25%、約20%、約10%。
作為決定本實施方式之虛設區域R1d內之金屬墊38之配置之方法,可採用例如與虛設區域R1c相同之方法。然而,因虛設區域R1c與虛設區域R1d之被覆率不同,故圖9之直線M1及M2延伸之方向與圖10之直線N1及N2延伸之方向不同。根據本實施方式,藉由將虛設區域R1d內之金屬墊38排列之方向與虛設區域R1c內之金屬墊38排列之方向錯開,可避免於半導體裝置內金屬墊38在相同之方向上連續排列。
圖11係表示第1實施方式之虛設區域R1b與虛設區域R1c之邊界附近之構造之俯視圖。
如圖11所示,於虛設區域R1b與虛設區域R1c之邊界附近,金屬墊38之佈局有所變化。結果,金屬墊38之被覆率於虛設區域R1b與虛設區域R1c之間有所變化。
圖12係表示第1實施方式之虛設區域R1c與虛設區域R1d之邊界附近之構造之俯視圖。
本實施方式之電路晶圓W2包含沿著虛設區域R1c與虛設區域R1d之邊界線(邊界面)L配置成線狀之複數個金屬墊38。由此,例如,可抑制於虛設區域R1c與虛設區域R1d之間產生未配置金屬墊38之較大空間。藉由抑制此種空間產生,可抑制於虛設區域R1c與虛設區域R1d之間產生空隙。
圖13係表示第1實施方式之虛設區域R1d與切割區域R2之邊界附近之構造之俯視圖。
如圖13所示,虛設區域R1d包含金屬墊38,但切割區域R2不含金屬墊38。然而,虛設區域R1d內之被覆率設定得較主動區域R1a、虛設區域R1b及虛設區域R1c之被覆率低。由此,根據本實施方式,可減小切割區域R2內產生之空隙V之深度。
圖14係用於說明第1實施方式之電路晶圓W2之作用之剖視圖。
圖14(a)示出虛設區域R1d內之被覆率設定為25%時之空隙V。圖14(b)示出虛設區域R1d內之被覆率約設定為10%時之空隙V。根據本實施方式,藉由將虛設區域R1d內之被覆率設定得較低,可減小切割區域R2內產生之空隙V之深度。
如以上所述,本實施方式之金屬墊38之被覆率,在與切割區域R2隔開之主動區域R1a、虛設區域R1b及虛設區域R1c、和與切割區域R2相鄰之虛設區域R1d互異。例如,虛設區域R1d內之被覆率低於主動區域R1a、虛設區域R1b及虛設區域R1c內之被覆率。由此,根據本實施方式,可抑制於嵌埋有金屬墊38之層間絕緣膜14內產生較大的空隙V等缺陷。此點對於陣列晶圓W1內之金屬墊41及層間絕緣膜13亦相同。
以上,對本發明之若干實施方式進行了說明,但該等實施方式僅作為例子而提出,並不意圖限定發明之範圍。本說明書中說明之新穎之裝置及方法能夠以其他多種方式實施。而且,可於不脫離發明主旨之範圍內對本說明書中說明之裝置及方法之方式進行各種省略、置換、變更。隨附之申請專利範圍及與其均等之範圍旨在包括發明之範圍或主旨中所包含之方式或變化例。
[相關申請的交叉參考]
本申請案享有以日本專利申請案2020-30950號(申請日:2020年2月26日)為基礎申請案之優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之全部內容。
1:陣列晶片
2:電路晶片
11:記憶單元陣列
12:絕緣膜
13:層間絕緣膜
14:層間絕緣膜
15:基板
16:基板
21:階梯構造部
22:接觸插塞
23:字元配線層
24:通孔插塞
31:電晶體
32:閘極電極
33:接觸插塞
34:配線層
35:配線層
36:配線層
37:通孔插塞
38:金屬墊
41:金屬墊
42:通孔插塞
43:配線層
44:配線層
45:通孔插塞
46:金屬墊
47:鈍化膜
51:絕緣層
52:阻擋絕緣膜
53:電荷蓄積層
54:隧道絕緣膜
55:通道半導體層
56:芯絕緣膜
Ax:金屬墊之X方向之尺寸
Ay:金屬墊之Y方向之尺寸
Bx:金屬墊間之X方向之間距
By:金屬墊間之Y方向之間距
BL:位元線
CL:柱狀部
Cx:各金屬墊之X方向之尺寸
Cy:各金屬墊之Y方向之尺寸
Dx:金屬墊間之X方向之間距
Dy:金屬墊間之Y方向之間距
E:邊界線(邊界面)
Ex:金屬墊間之X方向之位移量
Ey:金屬墊間之Y方向之位移量
Fx:各金屬墊之X方向之尺寸
Fy:各金屬墊之Y方向之尺寸
Gx:金屬墊間之X方向之間距
Gy:金屬墊間之Y方向之間距
Hx:金屬墊間之X方向之位移量
Hy:金屬墊間之Y方向之位移量
L:邊界線(邊界面)
M1:直線
M2:直線
N1:直線
N2:直線
P:開口部
R1:晶片區域
R1a:主動區域
R1b:虛設區域
R1c:虛設區域
R1d:虛設區域
R2:切割區域
S:貼合面
S1陣列晶圓之上表面
S2電路晶圓之上表面
SL:源極線
SL1:第1層
SL2:第2層
T:最短距離
U:單位區域
V:空隙
W1:陣列晶圓
W2:電路晶圓
WL:字元線
θ1:銳角
θ2:銳角
X,Y,Z:方向
圖1係表示第1實施方式之半導體裝置之構造之剖視圖。 圖2係表示第1實施方式之柱狀部CL之構造之剖視圖。 圖3、圖4係表示第1實施方式之半導體裝置之製造方法之剖視圖。 圖5係模式性地表示第1實施方式之電路晶圓W2之構造之俯視圖。 圖6(a)、(b)係用於說明第1實施方式之電路晶圓W2之問題之剖視圖。 圖7係表示第1實施方式之電路晶圓W2之構造之俯視圖。 圖8係表示第1實施方式之主動區域R1a與虛設區域R1b之構造之俯視圖。 圖9係表示第1實施方式之虛設區域R1c之構造之俯視圖。 圖10係表示第1實施方式之虛設區域R1d之構造之俯視圖。 圖11係表示第1實施方式之虛設區域R1b與虛設區域R1c之邊界附近之構造之俯視圖。 圖12係表示第1實施方式之虛設區域R1c與虛設區域R1d之邊界附近之構造之俯視圖。 圖13係表示第1實施方式之虛設區域R1d與切割區域R2之邊界附近之構造之俯視圖。 圖14(a)、(b)係用於說明第1實施方式之電路晶圓W2之作用之剖視圖。
E:邊界線(邊界面)
R1:晶片區域
R1a:主動區域
R1b:虛設區域
R1c:虛設區域
R1d:虛設區域
R2:切割區域
T:最短距離
W2:電路晶圓
X,Y,Z:方向
Claims (15)
- 一種半導體裝置,其包含:第1晶片;及第2晶片,其與上述第1晶片貼合;上述第1晶片包含:基板;邏輯電路,其設置於上述基板上;及複數個第1虛設墊,其等配置於上述邏輯電路之上方,設置於上述第1晶片與上述第2晶片貼合之第1貼合面,且未與上述邏輯電路電性連接;上述第2晶片包含:複數個第2虛設墊,其等設置於上述複數個第1虛設墊上;及記憶單元陣列,其設置於上述複數個第2虛設墊之上方;上述第1貼合面中之上述第1虛設墊之被覆率係:在與上述第1晶片之第1端邊隔開且設置有上述第1虛設墊之第1區域、與配置於上述第1端邊與上述第1區域之間且設置有上述第1虛設墊之第2區域為互異。
- 一種半導體裝置,其包含:第1晶圓;及第2晶圓,其與上述第1晶圓貼合;上述第1晶圓包含:第1基板;邏輯電路,其設置於上述第1基板上;及 複數個第1虛設墊,其等配置於上述邏輯電路之上方,設置於上述第1晶圓與上述第2晶圓貼合之第1貼合面,且未與上述邏輯電路電性連接;上述第2晶圓包含:複數個第2虛設墊,其等設置於上述複數個第1虛設墊上;及記憶單元陣列,其設置於上述複數個第2虛設墊之上方;上述第1貼合面中之上述第1虛設墊之被覆率係:在與上述第1晶圓之切割區域隔開且設置有上述第1虛設墊之第1區域、與配置於上述切割區域與上述第1區域之間設置有上述第1虛設墊之第2區域為互異。
- 如請求項2之半導體裝置,其中上述切割區域於上述第1貼合面中不包含上述第1虛設墊。
- 如請求項1至3中任一項之半導體裝置,其中上述第1區域內之上述被覆率為10~40%。
- 如請求項1至3中任一項之半導體裝置,其中上述第2區域內之上述被覆率為5~20%。
- 如請求項1至3中任一項之半導體裝置,其中上述第1區域內之上述被覆率與上述第2區域內之上述被覆率之比為3:2與3:1之間。
- 如請求項1至3中任一項之半導體裝置,其中 上述第2區域具有包圍上述第1區域之環狀形狀。
- 如請求項1至3中任一項之半導體裝置,其中上述第1晶片或上述第1晶圓進而包含:複數個第1主動墊,其等配置於上述邏輯電路之上方,設置於上述第1貼合面,且與上述邏輯電路電性連接;上述第2晶片或上述第2晶圓進而包含:複數個第2主動墊,其等設置於上述複數個第1主動墊上;上述第1貼合面中之上述第1主動墊之被覆率於第3區域內,為上述第1區域內之上述第1虛設墊之上述被覆率以上。
- 如請求項8之半導體裝置,其中上述第1區域包含:第1被覆率區域,其具有與上述第3區域內之上述第1主動墊之上述被覆率相同之上述第1虛設墊的上述被覆率;及第2被覆率區域,其具有未達上述第3區域內之上述第1主動墊之上述被覆率之上述第1虛設墊的上述被覆率。
- 如請求項9之半導體裝置,其中上述第1虛設墊包含沿著上述第1被覆率區域與上述第2被覆率區域之邊界線配置成線狀之複數個虛設墊。
- 如請求項1至3中任一項之半導體裝置,其中上述第1區域內之上述第1虛設墊之尺寸與上述第2區域內之上述第1 虛設墊之尺寸相同。
- 如請求項11之半導體裝置,其中上述第1區域內之上述第1虛設墊間之間距與上述第2區域內之上述第1虛設墊間之間距不同。
- 如請求項1至3中任一項之半導體裝置,其中上述第1區域內之上述第1虛設墊間之間距與上述第2區域內之上述第1虛設墊間之間距相同。
- 如請求項13之半導體裝置,其中上述第1區域內之上述第1虛設墊之尺寸與上述第2區域內之上述第1虛設墊之尺寸不同。
- 一種半導體裝置之製造方法,其包含:於第1基板上形成邏輯電路;於上述邏輯電路之上方,形成未與上述邏輯電路電性連接之複數個第1虛設墊;於第2基板上形成記憶單元陣列;於上述記憶單元陣列之上方形成複數個第2虛設墊;及藉由將形成於上述第1基板上之上述複數個第1虛設墊與形成於上述第2基板上之上述複數個第2虛設墊貼合,而於上述複數個第1虛設墊上配置上述複數個第2虛設墊; 上述複數個第1虛設墊設置於包含上述第1基板之第1晶圓與包含上述第2基板之第2晶圓貼合之第1貼合面,上述第1貼合面中之上述第1虛設墊之被覆率設定為:在與上述第1晶圓之切割區域隔開且設置有上述第1虛設墊之第1區域、與配置於上述切割區域與上述第1區域之間且設置有上述第1虛設墊之第2區域互異。
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