TWI778100B - 氧化物燒結體及濺鍍靶 - Google Patents

氧化物燒結體及濺鍍靶 Download PDF

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Publication number
TWI778100B
TWI778100B TW107124099A TW107124099A TWI778100B TW I778100 B TWI778100 B TW I778100B TW 107124099 A TW107124099 A TW 107124099A TW 107124099 A TW107124099 A TW 107124099A TW I778100 B TWI778100 B TW I778100B
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Taiwan
Prior art keywords
mass
sintered body
oxide sintered
transparent conductive
sputtering target
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TW107124099A
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English (en)
Chinese (zh)
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TW201910539A (zh
Inventor
松元謙士
井上雅樹
中村信一郎
矢野智泰
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日商三井金屬鑛業股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
TW107124099A 2017-08-08 2018-07-12 氧化物燒結體及濺鍍靶 TWI778100B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017153043 2017-08-08
JP2017-153043 2017-08-08

Publications (2)

Publication Number Publication Date
TW201910539A TW201910539A (zh) 2019-03-16
TWI778100B true TWI778100B (zh) 2022-09-21

Family

ID=65271197

Family Applications (1)

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TW107124099A TWI778100B (zh) 2017-08-08 2018-07-12 氧化物燒結體及濺鍍靶

Country Status (5)

Country Link
JP (1) JP7086080B2 (ja)
KR (1) KR102375637B1 (ja)
CN (1) CN110741106A (ja)
TW (1) TWI778100B (ja)
WO (1) WO2019031105A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117043122A (zh) * 2021-12-28 2023-11-10 三井金属矿业株式会社 氧化物烧结体及其制造方法以及溅射靶材
CN114620996A (zh) * 2022-02-23 2022-06-14 洛阳晶联光电材料有限责任公司 一种高效太阳能电池用旋转陶瓷靶材

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI249471B (en) * 2002-04-08 2006-02-21 Nitto Denko Corp Transparent conductive laminate and process of producing the same
CN103510047A (zh) * 2013-10-21 2014-01-15 研创应用材料（赣州）有限公司 一种制备新型导电氧化铟锡材料及其薄膜的方法
TWI567045B (zh) * 2011-09-06 2017-01-21 Idemitsu Kosan Co Sputtering target

Family Cites Families (14)

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JPS5726752B2 (ja) 1974-09-17 1982-06-07
JPH04277408A (ja) 1991-03-01 1992-10-02 Kojundo Chem Lab Co Ltd 透明電極
JP3827334B2 (ja) * 1993-08-11 2006-09-27 東ソー株式会社 Ｉｔｏ焼結体及びスパッタリングターゲット
JP3629333B2 (ja) * 1996-03-27 2005-03-16 帝人株式会社 タッチパネル用透明導電積層体及びその製造方法
JPH09262926A (ja) * 1996-03-27 1997-10-07 Teijin Ltd タッチパネル用透明導電積層体及びその製造方法
JP2000238178A (ja) * 1999-02-24 2000-09-05 Teijin Ltd 透明導電積層体
KR100744017B1 (ko) * 2001-06-26 2007-07-30 미츠이 긴조쿠 고교 가부시키가이샤 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법
KR20180063386A (ko) * 2009-11-19 2018-06-11 가부시키가이샤 아루박 투명 도전막의 제조 방법, 스퍼터링 장치 및 스퍼터링 타겟
JP5498537B2 (ja) * 2012-07-06 2014-05-21 日東電工株式会社 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル
JP6261987B2 (ja) * 2013-01-16 2018-01-17 日東電工株式会社 透明導電フィルムおよびその製造方法
JP6207633B2 (ja) * 2014-04-30 2017-10-04 日東電工株式会社 透明導電性フィルム
WO2015178297A1 (ja) * 2014-05-20 2015-11-26 日東電工株式会社 透明導電性フィルム
JP5876172B1 (ja) * 2014-10-06 2016-03-02 Ｊｘ金属株式会社 酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法
JP5735190B1 (ja) * 2015-01-22 2015-06-17 Jx日鉱日石金属株式会社 酸化物焼結体、スパッタリングターゲット及び酸化物薄膜

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI249471B (en) * 2002-04-08 2006-02-21 Nitto Denko Corp Transparent conductive laminate and process of producing the same
TWI567045B (zh) * 2011-09-06 2017-01-21 Idemitsu Kosan Co Sputtering target
CN103510047A (zh) * 2013-10-21 2014-01-15 研创应用材料（赣州）有限公司 一种制备新型导电氧化铟锡材料及其薄膜的方法

Also Published As

Publication number Publication date
WO2019031105A1 (ja) 2019-02-14
CN110741106A (zh) 2020-01-31
JP7086080B2 (ja) 2022-06-17
TW201910539A (zh) 2019-03-16
KR20200008583A (ko) 2020-01-28
JPWO2019031105A1 (ja) 2020-07-09
KR102375637B1 (ko) 2022-03-17

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