TWI777947B - 光電模組總成及製造方法 - Google Patents
光電模組總成及製造方法 Download PDFInfo
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- TWI777947B TWI777947B TW106109795A TW106109795A TWI777947B TW I777947 B TWI777947 B TW I777947B TW 106109795 A TW106109795 A TW 106109795A TW 106109795 A TW106109795 A TW 106109795A TW I777947 B TWI777947 B TW I777947B
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 230000003287 optical effect Effects 0.000 claims abstract description 43
- 125000006850 spacer group Chemical group 0.000 claims abstract description 27
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000000429 assembly Methods 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- MTLMVEWEYZFYTH-UHFFFAOYSA-N 1,3,5-trichloro-2-phenylbenzene Chemical compound ClC1=CC(Cl)=CC(Cl)=C1C1=CC=CC=C1 MTLMVEWEYZFYTH-UHFFFAOYSA-N 0.000 description 6
- 230000000712 assembly Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
本發明提供一種包含一光電模組之光電模組總成。該模組包含:一主動光電組件,其在一安裝基板中或上;一光學子總成;及一間隔件,其安置於該安裝基板與該光學子總成之間以便建立該主動光電組件與該光學子總成之間的一特定距離。該光電模組總成亦包含一凹入基板,其包含第一及第二表面,其中該第二表面處在比該第一表面更靠近該光學子總成之一平面中。該光電模組安裝於該第一表面上。該第二表面係用於安裝其他組件。
Description
本發明係關於光電模組總成及製造此等總成之方法。
包含一光學輻射發射器及/或一光學感測器之光電模組可用於廣泛範圍的應用中,包含例如距離量測、接近感測、手勢感測及成像。在一些應用中,此等光電模組包含於諸如行動計算裝置之多種消費型電子器件(例如,數位板及個人資料助理(PDA)、智慧型手機)及其他裝置之外殼中。 然而,模組欲整合至其中之裝置類型中通常非常需要空間。例如,此問題對於智慧型手機製造商及其中非常需要空間的其他電子設備及系統之製造而言尤為重要。因此,可期望提供緊密且相對易於製造之模組。
本發明描述光電模組總成及製造此等總成之方法。 在一些例項中,方法可促進具有允許光電子裝置之主動對準之電接點之一光電模組之製造。該等方法亦可促進併入光電模組且具有一相對小z高度之一總成之製造。 在一個態樣中,例如,本發明描述一種包含一光電模組之光電模組總成。該模組包含:一主動光電組件,其在一安裝基板中或上;一光學子總成;及一間隔件,其安置於該安裝基板與該光學子總成之間以便建立該主動光電組件與該光學子總成之間的一特定距離。該光電模組總成亦包含一凹入基板,其包含第一及第二表面,其中該第二表面處在比該第一表面更靠近該光學子總成之一平面中。該光電模組安裝於該第一表面上。該第二表面係用於安裝其他組件。 一些實施方案包含一或多個以下特徵。例如,該凹入基板可包含一第一部分及一第二部分,該凹入基板之該第二部分係由具有高於該第一部分之導熱率之一材料組成。該第二部分之一表面用作其上安裝該主動光電組件之該第一表面。該第一部分安置於該第二部分上,但未覆蓋該第一表面。 在一些情況中,該凹入基板之該第一部分包含一印刷電路板。 在一些例項中,該凹入基板之該第二部分由一金屬或陶瓷材料組成。在一些實施方案中,該凹入基板之該第二部分至少部分由導電材料組成。 該光電模組總成可包含該安裝基板之一第一表面上之第一電接點以及安置於該安裝基板之一第二相對表面上之第二電接點,其中該安裝基板之該第二表面比該安裝基板之該第一表面更接近該凹入基板之該第一表面。 在一些實施方案中,一填充物材料安置於該安裝基板之該第二表面與該凹入基板之該第一表面之間。該填充物材料較佳具有良好導熱率及/或良好熱容量。此外,在一些例項中,一電絕緣材料實質上填充該凹入基板之該第二部分與該安裝基板之間之一空間。 該間隔件可包含突出超過該安裝基板之電絕緣安裝突部,其中該等安裝突部經由黏著劑附接至該凹入基板之該第一表面。在一些例項中,該間隔件包含與該主動光電組件接觸之對準突部。 本發明亦描述一種光電模組,其包含一安裝基板中或上之一主動光電組件、一光學子總成及一間隔件。該安裝基板具有一第一表面且具有在與該第一表面相對之一側上之一第二表面。該間隔件安置於該安裝基板與該光學子總成之間以便建立在該主動光電組件與該光學子總成之間的一特定距離。第一電接點安置於該安裝基板之該第一表面上,且第二電接點安置於該安裝基板之該第二表面上。 根據一進一步態樣,本發明描述一種用於製造一光電模組總成之方法。該方法包含在一安裝基板之一第一側中或上建立至一主動光電組件之電接觸,其中該電接觸經由該安裝基板之與該第一側相對之一第二側上之電接點而建立。該方法進一步包含執行主動對準以使一光學子總成實質上與該主動光電組件對準,其中在維持至該主動光電組件之電接觸時執行該主動對準。該光電總成安裝在一基板之一凹入區域上,且經由該安裝基板之該第一側上的電接點建立至該主動光電組件之電接觸。 以下詳細描述、附圖及發明申請專利範圍將明白其他態樣、特徵及優勢。
本申請案主張2017年3月23日申請之美國臨時專利申請案第62/312,026號之優先權利。先前申請案之全文以引用之方式併入本文中。 本發明描述一種可促進具有允許光電子裝置之主動對準之電接點之一光電模組之製造。該方法亦可促進併入光電模組且具有一相對小z高度之一總成之製造。 圖1A至圖1E繪示根據一些實施方案之一光電模組總成之製造中之各個階段之一實例。特定言之,圖1A至圖1C繪示一光電模組之製造中之階段,且圖1D至圖1E繪示將模組整合於一總成中。 如圖1A中所示,在一安裝基板12 (諸如一引線框、印刷電路板(PCB)或具有導電佈線之陶瓷板)之一第一表面上安裝一主動光電裝置10。例如,光電裝置10可實施為一光學發射器晶片,諸如一發光二極體(LED)、紅外線(IR) LED、有機LED (OLED)、紅外線(IR)雷射、垂直腔表面發射雷射(VCSEL)或其他光學輻射源。在其他例項中,例如,光電裝置10實施為一光學感測器晶片,諸如一飛行時間(TOF)光學感測器晶片或其他影像感測器晶片(例如,CMOS或CCD影像感測器),其包含一光敏像素陣列。安裝基板12之第二(底部)表面包含藉由安裝基板12中之佈線電連接至光電裝置10之電接點(例如,焊墊)14。 如圖1A中進一步所示,一間隔件16橫向環繞光電裝置10。間隔件16用作模組之外側壁且建立光電裝置10與安置於光電裝置10上方之一光學子總成18之間的一指定距離(參見圖1B)。間隔件亦可有助於建立光電裝置10與光學子總成18之間的光學對準。例如,間隔件16可藉由真空注射或其他模製技術形成。 在一些例項中,安裝基板12之一部分12A稍微橫向延伸超出間隔件16之外表面。安裝基板12之此部分12A可在其上表面(即,其上安裝裝置10之相同表面上)上具有電接點(焊墊) 22。例如,在裝置10整合至如下文描述之一總成中之後,接點22可用以建立至裝置10之電接觸。 接著,如圖1B中所示,使用一黏著劑19(諸如膠水)將光學子總成18附接至間隔件16之(若干)自由端。光學子總成18可包含一或多個被動光學元件,諸如透鏡。在使黏著劑固化或容許其硬化之前,可使用機器人微夾持器20A、20B執行光學子總成18相對於裝置10之主動對準。一個微夾持器20A將間隔件16固持在適當位置中,而第二夾持器20B移動光學子總成以達成適當對準。為促進主動對準,可使用背面接點14開啟裝置10之電力,對裝置10提供控制信號及/或自裝置10接收輸出信號。可執行對準校正以在x、y、z及旋轉方向上提供適當聚焦及對準。 在完成主動對準後,可使黏著劑固化或允許黏著劑硬化,且可移除微夾持器20。可解除經由背面接點14至裝置10之電接觸。在圖1C中繪示所得模組24。如下文所述,在隨後製造階段中,將模組24併入一光電模組總成中。 如圖1D中所繪示,將模組24安裝於一凹入基板26上,凹入基板26具有在兩個不同高度處用於安裝組件之表面。在所繪示的實例中,凹入基板26包含一第一實質上平面部分30,其附接至一第二實質上平面部分28使得第二部分28提供一第一較低表面28A用於安裝模組24,且第一部分30提供一第二較高表面30A用於安裝其他電子組件。兩個表面28A、30A實質上彼此平行。 例如,凹入基板26之第一部分30可由諸如FR4之PCB材料組成,其係指派給玻璃強化之環氧層壓薄板、管、棒及PCB之等級名稱且係由具有環氧樹脂黏結劑之耐燃編織玻璃纖維布組成之一複合材料。此等PCB材料具有一相對低導熱率(例如,在20°C下~0.25 W/mK)。另一方面,凹入基板26之第二部分28較佳具有良好熱性質(即,高於第一部分30之導熱率及/或熱容量)以促進熱耗散。因此,例如,第二部分28可由一金屬或陶瓷材料組成且在一些例項中對總成提供一剛性殼體。作為一實例,在一些實施方案中,凹入基板26之第二部分28係由鋁(Al) (在20°C下~200 W/mK導熱率)或銅(Cu) (在20°C下~400 W/mK之導熱率)組成之一金屬。在一些實施方案中,第二部分28係由氮化鋁(AlN) (在20°C下80至200 W/mK之導熱率)組成之一陶瓷。其他材料亦可用於第二部分。 在所繪示之實例中,PCB 30具有一凹口32使得模組24可直接安裝在第二部分28上凹口32內。因此,第一部分30 (例如PCB)未覆蓋第二部分28之模組24所附接之表面28A。藉由將模組24直接安裝在第二部分28上(例如,使用黏著劑)而非安裝在PCB 30上可減小總成之總體z高度。 接著,如圖1E中所示,可在安裝基板12上之電接點22與在PCB 30上之電接點(例如,焊墊)36之間提供電連接(例如,導電佈線) 34。在一些例項中,一模組製造商如圖1A至圖1C中所繪示般製造模組,而另一製造商將如圖1D至圖1E中所繪示般將模組組裝成一總成。在其他例項中,同樣的製造商可執行如圖1A至圖1E中所繪示之全部製造階段。 在一些實施方案中,可省略安裝基板12之裝置側上的電接點22。代替性地,可提供自安裝基板12之底側上的電接點14至凹入基板26之第二部分28之外部表面之電連接。在此等境況中,亦可省略延伸超過間隔件16之外表面之安裝基板12之部分12A。圖2繪示此一實施方案之一實例。 如圖1E及圖2之實施方案中所繪示,間隔件16稍微延伸超過安裝基板12之下表面使得在安裝基板12之下表面與凹入基板26之第二部分28之上表面之存在空間。間隔件16有利地可由電絕緣材料組成。在一些例項中,安裝基板12之下表面與凹入基板26之第二部分28之上表面之間的空間38可實質上填充有一材料(其係電絕緣及/或具有相對高導熱率及/或熱容量)。 在一些例項中,例如,如圖3及圖4中所示,安裝基板12直接擱置在凹入基板26之第二部分28上。 此外,如圖5A至5C中所示,在一些實施方案中,光電子裝置10可實施為形成在基板12自身中之基於半導體之發光或光敏元件40,而非實施為安裝在基板12上之一分離晶片。在所繪示實例中,間隔件16包含直接(不用黏著劑)擱置在裝置10之表面上之對準突部16A。間隔件16亦包含(例如藉由黏著劑)附接至凹入基板26之第二部分28之表面之安裝突部16B。此一配置可促進建立發光或光敏元件40與光學子總成18之被動光學元件(例如透鏡)之間的更精確距離。間隔件16亦可(例如,藉由黏著劑42)附接至PCB 30之表面30A。圖5C繪示光電模組總成之一部分-其中移除間隔件16及光學子總成18-使得可見主動光電裝置10擱置在PCB 30之凹入開口32內(凹入基板26之第二部分28上)。可在PCB 30之表面30A上提供額外電子組件44。 儘管已描述多種實施例,但可在本發明之精神內進行修改。此外,在一些例項中,結合不同實施例描述之特徵可包含於相同實施方案中。相應地,其他實施方案係在發明申請專利範圍之範疇內。
10‧‧‧主動光電裝置12‧‧‧安裝基板12A‧‧‧安裝基板之部分14‧‧‧電接點16‧‧‧間隔件16A‧‧‧對準突部16B‧‧‧安裝突部18‧‧‧光學子總成19‧‧‧黏著劑20A‧‧‧機器人微夾持器20B‧‧‧機器人微夾持器22‧‧‧電接點24‧‧‧模組26‧‧‧凹入基板28‧‧‧第二部分28A‧‧‧第一較低表面30‧‧‧第一部分30A‧‧‧第二較高表面32‧‧‧凹口34‧‧‧電連接36‧‧‧電接點38‧‧‧空間40‧‧‧發光或光敏元件42‧‧‧黏著劑44‧‧‧電子組件
圖1A至圖1E繪示製造一光電模組總成期間的各個階段。 圖2、圖3及圖4繪示光電模組總成之實例。 圖5A至圖5B繪示一光電模組總成之另一實例。 圖5C繪示圖5A至圖5B之光電模組總成之一部分。
10‧‧‧主動光電裝置
12‧‧‧安裝基板
12A‧‧‧安裝基板之部分
16‧‧‧間隔件
18‧‧‧光學子總成
24‧‧‧模組
28‧‧‧第二部分
30‧‧‧第一部分
32‧‧‧凹口
34‧‧‧電連接
36‧‧‧電接點
38‧‧‧空間
Claims (16)
- 一種光電模組總成,其包括:一光電模組,其包含:一主動光電組件,其在一安裝基板中或上,一光學子總成,及一間隔件,其安置於該安裝基板與該光學子總成之間以便建立在該主動光電組件與該光學子總成之間的一特定距離;及一凹入基板,其包含一第一表面,該光電模組安裝在該第一表面上,該凹入基板進一步包含用於安裝其他組件之一第二表面,該第二表面處在比該第一表面更靠近該光學子總成之一平面中;及該安裝基板之一第一表面上之多個第一電接點;及安置於該安裝基板之一第二表面上之多個第二電接點,該第二表面相對於該安裝基板之該第一表面,其中該安裝基板之該第二表面比該安裝基板之該第一表面更接近於該凹入基板之該第一表面;其中該等第一電接點及該等第二電接點經組態以允許主動對準該主動光電組件與該光學子總成。
- 如請求項1之光電模組總成,其中該凹入基板包括一印刷電路板及除該印刷電路板外之一第二部分,該第二部分之一表面用作該第一表面,其中該印刷電路板安置於該第二部分上,但未覆蓋該第一表面。
- 如請求項2之光電模組總成,其中該凹入基板之該第二部分係由一金 屬或陶瓷材料組成。
- 如請求項2之光電模組總成,其中該凹入基板之該第二部分至少部分係由導電材料組成。
- 如請求項1之光電模組總成,其中該凹入基板包括一第一部分及一第二部分,該凹入基板之該第二部分係由具有高於該第一部分之導熱率之一材料組成,其中該第二部分之一表面用作該第一表面,且其中該第一部分安置於該第二部分上,但未覆蓋該第一表面。
- 如請求項1之光電模組總成,其進一步包括安置於該安裝基板之該第二表面與該凹入基板之該第一表面之間之一填充物材料。
- 如請求項6之光電模組總成,其中該填充物材料具有良好導熱率。
- 如請求項6之光電模組總成,其中該填充物材料具有良好熱容量。
- 如請求項2之光電模組總成,其中一電絕緣材料實質上填充該凹入基板之該第二部分與該安裝基板之間之一空間。
- 如請求項1之光電模組總成,其中該間隔件包括突出超過該安裝基板之電絕緣安裝突部,該等安裝突部經由黏著劑附接至該凹入基板之該第一表面。
- 如請求項10之光電模組總成,其中該間隔件進一步包括與該主動光電組件接觸之對準突部。
- 如前述請求項1之光電模組總成,其中該第一表面及該第二表面彼此平行。
- 一種光電模組,其包括:一主動光電組件,其在一安裝基板中或上,該安裝基板具有一第一表面且具有在與該第一表面相對之一側上之一第二表面;一光學子總成;及一間隔件,其安置於該安裝基板與該光學子總成之間以便建立該主動光電組件與該光學子總成之間之一特定距離;多個第一電接點,其等安置於該安裝基板之該第一表面上;及多個第二電接點,其等安置於該安裝基板之該第二表面上;其中該等第一電接點及該等第二電接點經組態以允許主動對準該主動光電組件與該光學子總成。
- 如請求項13之光電模組,其中該間隔件包括在一遠離該光學子總成方向上突出超過該安裝基板之該第二表面之電絕緣突部。
- 如請求項13之光電模組,其中該安裝基板包含一引線框、印刷電路板或具有導電佈線之陶瓷板。
- 一種用於製造一光電模組總成之方法,該方法包括:建立至一安裝基板之一第一側中或上之一主動光電組件之電接觸,其中該電接觸經由該安裝基板之與該第一側相對之一第二側上之多個電接點而建立;以及執行主動對準以使一光學子總成實質上與該主動光電組件對準,其中在維持至該主動光電組件之該電接觸時執行該主動對準;然後將該光電模組總成安裝在一基板之一凹入區域上;及經由該安裝基板之該第一側上之多個電接點建立至該主動光電組件之電接觸;其中該安裝基板之該第一側與該第二側上之該等電接點經組態以允許主動對準該主動光電組件與該光學子總成。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200530731A (en) * | 2004-02-20 | 2005-09-16 | Flextronics Int Usa Inc | Integrated lens and chip assembly for a digital camera |
CN1967796A (zh) * | 2005-11-18 | 2007-05-23 | 精工爱普生株式会社 | 光学模块的制造方法 |
US20080111949A1 (en) * | 2006-06-30 | 2008-05-15 | Sony Corporation | Backlight device, liquid crystal display device, and electronic apparatus |
US20130023072A1 (en) * | 2011-07-19 | 2013-01-24 | Digitaloptics Corporation East | Substrate For Integrated Modules |
TW201312706A (zh) * | 2011-08-10 | 2013-03-16 | Heptagon Micro Optics Pte Ltd | 光電模組和用於製造光電模組的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005038956A (ja) * | 2003-07-17 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 光部品とその製造方法 |
US7773836B2 (en) * | 2005-12-14 | 2010-08-10 | Luxtera, Inc. | Integrated transceiver with lightpipe coupler |
JP5252770B2 (ja) | 2004-06-10 | 2013-07-31 | 三星電子株式会社 | イメージセンサーパッケージの組立方法 |
GB2417826B (en) * | 2004-09-16 | 2006-08-09 | Kingpak Tech Inc | Image sensor module structure |
US8299589B2 (en) * | 2010-07-26 | 2012-10-30 | TDK Taiwan, Corp. | Packaging device of image sensor |
CN105531829B (zh) * | 2013-09-10 | 2018-08-14 | 赫普塔冈微光有限公司 | 紧凑光电模块以及用于这样的模块的制造方法 |
WO2015126328A1 (en) | 2014-02-18 | 2015-08-27 | Heptagon Micro Optics Pte. Ltd. | Optical modules including customizable spacers for focal length adjustment and/or reduction of tilt, and fabrication of the optical modules |
US9711552B2 (en) | 2014-08-19 | 2017-07-18 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
WO2017123151A1 (en) | 2016-01-11 | 2017-07-20 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules having features for improved alignment and reduced tilt |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200530731A (en) * | 2004-02-20 | 2005-09-16 | Flextronics Int Usa Inc | Integrated lens and chip assembly for a digital camera |
CN1967796A (zh) * | 2005-11-18 | 2007-05-23 | 精工爱普生株式会社 | 光学模块的制造方法 |
US20080111949A1 (en) * | 2006-06-30 | 2008-05-15 | Sony Corporation | Backlight device, liquid crystal display device, and electronic apparatus |
US20130023072A1 (en) * | 2011-07-19 | 2013-01-24 | Digitaloptics Corporation East | Substrate For Integrated Modules |
TW201312706A (zh) * | 2011-08-10 | 2013-03-16 | Heptagon Micro Optics Pte Ltd | 光電模組和用於製造光電模組的方法 |
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