TWI773911B - Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method - Google Patents

Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method Download PDF

Info

Publication number
TWI773911B
TWI773911B TW108126096A TW108126096A TWI773911B TW I773911 B TWI773911 B TW I773911B TW 108126096 A TW108126096 A TW 108126096A TW 108126096 A TW108126096 A TW 108126096A TW I773911 B TWI773911 B TW I773911B
Authority
TW
Taiwan
Prior art keywords
layer
vapor deposition
cover
support body
support
Prior art date
Application number
TW108126096A
Other languages
Chinese (zh)
Other versions
TW202033793A (en
Inventor
細田哲史
村田佳則
Original Assignee
日商大日本印刷股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商大日本印刷股份有限公司 filed Critical 日商大日本印刷股份有限公司
Publication of TW202033793A publication Critical patent/TW202033793A/en
Application granted granted Critical
Publication of TWI773911B publication Critical patent/TWI773911B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Superstructure Of Vehicle (AREA)

Abstract

本發明之蒸鍍罩具備：罩，其具有形成有第1貫通孔之鍍覆層；及支持體，其與罩接合且形成有俯視時與第1貫通孔重疊之第2貫通孔。The vapor deposition cover of the present invention includes a cover having a plated layer having a first through hole formed therein, and a support joined to the cover and formed with a second through hole overlapping the first through hole in plan view.

Description

蒸鍍罩、蒸鍍罩裝置、蒸鍍罩之製造方法、蒸鍍罩裝置之製造方法及蒸鍍方法Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method

本發明係關於一種蒸鍍罩、蒸鍍罩裝置、蒸鍍罩之製造方法、蒸鍍罩裝置之製造方法及蒸鍍方法。The present invention relates to an evaporation hood, an evaporation hood device, a manufacturing method of an evaporation hood, a manufacturing method of an evaporation hood device, and an evaporation method.

近年來，對智慧型手機或平板PC等可攜帶設備所使用之顯示裝置要求高清，例如要求像素密度為500 ppi以上。又，可攜帶設備中對應對超高清(UHD)之需求亦在提高，於該情形時，要求顯示裝置之像素密度為例如800 ppi以上。In recent years, high definition is required for display devices used in portable devices such as smart phones and tablet PCs, for example, a pixel density of 500 ppi or more is required. In addition, the demand for ultra-high definition (UHD) in portable devices is also increasing, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

顯示裝置中之有機EL顯示裝置因應答性良好、消耗電力低或對比度高而正受到關注。作為形成有機EL顯示裝置之像素之方法，已知有使用包含以所需圖案排列之貫通孔之蒸鍍罩來以所需圖案形成像素之方法。具體而言，首先，將有機EL顯示裝置用之基板(有機EL基板)投入蒸鍍裝置中，然後，於蒸鍍裝置內使蒸鍍罩密接於有機EL基板，而進行使有機材料蒸鍍於有機EL基板上之蒸鍍步驟。 [先前技術文獻] [專利文獻]Among display devices, organic EL display devices are attracting attention due to their good responsiveness, low power consumption, and high contrast ratio. As a method of forming a pixel of an organic EL display device, a method of forming a pixel in a desired pattern using an evaporation mask including through holes arranged in a desired pattern is known. Specifically, first, a substrate for an organic EL display device (organic EL substrate) is put into a vapor deposition device, and then a vapor deposition cover is brought into close contact with the organic EL substrate in the vapor deposition device, and the organic material is vapor-deposited on the organic EL substrate. Evaporation step on organic EL substrate. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2016-148112號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-148112

於專利文獻1所揭示之技術中，利用鍍覆處理製造蒸鍍罩後，將該蒸鍍罩安裝於框架上而製造蒸鍍罩裝置。此時，蒸鍍罩裝置之框架使蒸鍍罩保持為張緊狀態。即，於固定於框架之狀態下，對蒸鍍罩賦予張力。藉此，抑制蒸鍍罩產生撓曲。然而，發現藉由對經薄化之蒸鍍罩賦予張力而於該蒸鍍罩產生皺褶或變形之問題。In the technique disclosed in patent document 1, after manufacturing a vapor deposition cover by a plating process, this vapor deposition cover is attached to a frame, and a vapor deposition cover apparatus is manufactured. At this time, the frame of the vapor deposition hood device keeps the vapor deposition hood in a tensioned state. That is, in the state fixed to the frame, tension is applied to the vapor deposition cover. Thereby, deflection|deviation of a vapor deposition cover is suppressed. However, it was found that by applying tension to the thinned evaporation hood, there is a problem of wrinkling or deformation of the evaporation hood.

本發明係考慮此種方面而完成者，其目的在於提供一種可抑制蒸鍍罩產生皺褶或變形之蒸鍍罩、蒸鍍罩裝置、蒸鍍罩之製造方法、蒸鍍罩裝置之製造方法及蒸鍍方法。The present invention has been made in consideration of such an aspect, and an object of the present invention is to provide a vapor deposition cover, a vapor deposition cover device, a method for manufacturing a vapor deposition cover, and a method for manufacturing a vapor deposition cover device that can suppress the occurrence of wrinkles or deformation of the vapor deposition cover and evaporation method.

本發明之第1態樣係一種蒸鍍罩，其具備：罩，其具有形成有第1貫通孔之鍍覆層；及支持體，其與上述罩接合，形成有俯視時與上述第1貫通孔重疊之第2貫通孔；且上述支持體之厚度為0.20 mm以上2.0 mm以下。A first aspect of the present invention is a vapor deposition cover comprising: a cover having a plating layer in which a first through hole is formed; and a support joined to the cover and formed with the first through hole in plan view The second through hole where the holes overlap; and the thickness of the above-mentioned support is 0.20 mm or more and 2.0 mm or less.

本發明之第2態樣係如上述第1態樣之蒸鍍罩，其中上述支持體具有與上述罩接合之第1層、及與上述第1層接合之第2層，且上述第2貫通孔亦可貫通上述第1層及上述第2層。A second aspect of the present invention is the vapor deposition cover according to the first aspect, wherein the support has a first layer bonded to the cover, a second layer bonded to the first layer, and the second through-hole A hole may penetrate through the said 1st layer and the said 2nd layer.

本發明之第3態樣係如上述第2態樣之蒸鍍罩，其中上述第1層及上述第2層亦可藉由接著劑、焊料或熔接相互接合。A third aspect of the present invention is the vapor deposition cover of the second aspect, wherein the first layer and the second layer may be joined to each other by an adhesive, solder, or welding.

本發明之第4態樣係如上述第2態樣或上述第3態樣之蒸鍍罩，其中上述第1層及上述第2層之接合面亦可由金屬自側方覆蓋。A fourth aspect of the present invention is the vapor deposition cover according to the second aspect or the third aspect, wherein the joint surfaces of the first layer and the second layer may be covered with metal from the side.

本發明之第5態樣係如上述第4態樣之蒸鍍罩，其中上述金屬亦可藉由鍍覆處理形成。The 5th aspect of this invention is the vapor deposition cover of the said 4th aspect, and the said metal can also be formed by a plating process.

本發明之第6態樣係如上述第2態樣至上述第5態樣之各態樣之蒸鍍罩，其中上述支持體亦可進而具有與上述第2層接合之第3層。A sixth aspect of the present invention is the vapor deposition cover of each of the aforementioned second aspect to the aforementioned fifth aspect, wherein the support may further have a third layer bonded to the second layer.

本發明之第7態樣係如上述第6態樣之蒸鍍罩，其中上述第2層及上述第3層亦可藉由接著劑、焊料或熔接相互接合。A seventh aspect of the present invention is the vapor deposition cover according to the sixth aspect, wherein the second layer and the third layer may be joined to each other by an adhesive, solder, or welding.

本發明之第8態樣係如上述第6態樣或上述第7態樣之蒸鍍罩，其中上述第2層及上述第3層之接合面亦可由金屬自側方覆蓋。An eighth aspect of the present invention is the vapor deposition cover according to the sixth aspect or the seventh aspect, wherein the joint surfaces of the second layer and the third layer may be covered with metal from the side.

本發明之第9態樣係如上述第8態樣之蒸鍍罩，其中上述金屬亦可藉由鍍覆處理形成。A ninth aspect of the present invention is the vapor deposition cover of the above-mentioned eighth aspect, wherein the metal may be formed by a plating process.

本發明之第10態樣係如上述第1態樣至上述第9態樣之各態樣之蒸鍍罩，其中上述支持體亦可包含剛性率為50 GPa以上65 GPa以下之材料。A tenth aspect of the present invention is the vapor deposition cover of each of the above-mentioned first to ninth aspects, wherein the support may contain a material having a rigidity of 50 GPa or more and 65 GPa or less.

本發明之第11態樣係一種蒸鍍罩裝置，其具備：如上述第1態樣至上述第10態樣中任一態樣之蒸鍍罩；及框架，其與上述蒸鍍罩之上述支持體接合，且設置有俯視時與上述第2貫通孔重疊之開口。An eleventh aspect of the present invention is a vapor deposition hood device including: the vapor deposition hood according to any one of the first to tenth aspects described above; The support is joined and provided with an opening overlapping the second through hole in a plan view.

本發明之第12態樣係一種蒸鍍罩之製造方法，其具備如下步驟：準備與基材接合且具有形成有第1貫通孔之鍍覆層之罩；準備形成有第2貫通孔之支持體；以俯視時上述支持體之上述第2貫通孔與上述罩之上述第1貫通孔重疊之方式，將上述支持體與上述罩接合；以及自上述罩將上述基材剝離；且上述支持體之厚度為0.20 mm以上2.0 mm以下。A twelfth aspect of the present invention is a method for manufacturing a vapor deposition cover, comprising the steps of: preparing a cover that is bonded to a base material and having a plating layer formed with first through holes; and preparing a support having second through holes formed therein In a plan view, the above-mentioned 2nd through hole of above-mentioned support body and the above-mentioned 1st through hole of above-mentioned cover are overlapped, above-mentioned support body is joined with above-mentioned cover; And above-mentioned base material is peeled off from above-mentioned cover; And above-mentioned support body The thickness is 0.20 mm or more and 2.0 mm or less.

本發明之第13態樣係如上述第12態樣之蒸鍍罩之製造方法，其中亦可於上述基材形成導電層，且上述第1貫通孔係藉由於上述導電層上析出上述鍍覆層而形成。A thirteenth aspect of the present invention is the method for producing a vapor deposition cover according to the twelfth aspect, wherein a conductive layer may be formed on the base material, and the first through hole is formed by depositing the plating on the conductive layer. layer is formed.

本發明之第14態樣係如上述第12態樣或上述第13態樣之蒸鍍罩之製造方法，其中準備上述支持體之步驟亦可具有如下步驟：準備第1層及第2層；以及將上述第1層及上述第2層相互接合。A 14th aspect of the present invention is the method for manufacturing a vapor deposition mask according to the twelfth aspect or the thirteenth aspect, wherein the step of preparing the support may also include the following steps: preparing the first layer and the second layer; And the said 1st layer and the said 2nd layer are mutually joined.

本發明之第15態樣係如上述第14態樣之蒸鍍罩之製造方法，其中於將上述第1層及上述第2層相互接合之步驟中，上述第1層及上述第2層亦可藉由接著劑、焊料或熔接相互接合。A fifteenth aspect of the present invention is the method for producing a vapor deposition mask according to the fourteenth aspect, wherein in the step of bonding the first layer and the second layer to each other, the first layer and the second layer are also They can be joined to each other by adhesive, solder or welding.

本發明之第16態樣係如上述第14態樣或上述第15態樣之蒸鍍罩之製造方法，其中準備上述支持體之步驟亦可於將上述第1層及上述第2層相互接合之步驟之後，進而具有利用金屬將上述第1層及上述第2層之接合面自側方覆蓋之步驟。A 16th aspect of the present invention is the method for producing a vapor deposition mask according to the 14th aspect or the 15th aspect, wherein the step of preparing the support may be performed by bonding the first layer and the second layer to each other After the step, there is further a step of covering the bonding surface of the first layer and the second layer from the side with a metal.

本發明之第17態樣係如上述第16態樣之蒸鍍罩之製造方法，其中於利用上述金屬將上述第1層及上述第2層之接合面自側方覆蓋之步驟中，上述金屬亦可藉由鍍覆處理形成。A seventeenth aspect of the present invention is the method for producing a vapor deposition cover according to the sixteenth aspect, wherein in the step of covering the joint surface of the first layer and the second layer with the metal from the side, the metal It can also be formed by a plating process.

本發明之第18態樣係如上述第14態樣至上述第17態樣之各態樣之蒸鍍罩之製造方法，其中準備上述支持體之步驟亦可進而具有如下步驟：準備第3層；以及將上述第2層及上述第3層相互接合。An eighteenth aspect of the present invention is the method for manufacturing a vapor deposition mask according to the above-mentioned fourteenth aspect to the seventeenth aspect, wherein the step of preparing the above-mentioned support may further include the following step: preparing the third layer ; and the second layer and the third layer are bonded to each other.

本發明之第19態樣係如上述第18態樣之蒸鍍罩之製造方法，其中於將上述第2層及上述第3層相互接合之步驟中，上述第2層及上述第3層亦可藉由接著劑、焊料或熔接相互接合。A nineteenth aspect of the present invention is the method for manufacturing a vapor deposition mask according to the eighteenth aspect, wherein in the step of bonding the second layer and the third layer to each other, the second layer and the third layer are also They can be joined to each other by adhesive, solder or welding.

本發明之第20態樣係如上述第18態樣或上述第19態樣之蒸鍍罩之製造方法，其中準備上述支持體之步驟亦可於將上述第2層及上述第3層相互接合之步驟之後，進而具有利用金屬將上述第2層及上述第3層之接合面自側方覆蓋之步驟。A twentieth aspect of the present invention is the method for producing a vapor deposition mask according to the eighteenth aspect or the nineteenth aspect, wherein the step of preparing the support may be performed by bonding the second layer and the third layer to each other. After the step, there is further a step of covering the bonding surface of the second layer and the third layer from the side with a metal.

本發明之第21態樣係如上述第20態樣之蒸鍍罩之製造方法，其中於利用上述金屬將上述第2層及上述第3層之接合面自側方覆蓋之步驟中，上述金屬亦可藉由鍍覆處理形成。A 21st aspect of the present invention is the method for producing a vapor deposition cover according to the 20th aspect, wherein in the step of covering the joint surfaces of the second layer and the third layer with the metal from the side, the metal It can also be formed by a plating process.

本發明之第22態樣係一種蒸鍍罩裝置之製造方法，其具備如下步驟：準備藉由如上述第12態樣至上述第21態樣中任一態樣之蒸鍍罩之製造方法製造之蒸鍍罩；以及於上述蒸鍍罩之上述支持體安裝框架。A 22nd aspect of the present invention is a method for manufacturing a vapor deposition hood device, which includes the step of preparing for manufacture by the manufacturing method for an vapor deposition hood according to any one of the 12th aspect to the 21st aspect described above. The vapor deposition cover; and the support mounting frame on the vapor deposition cover.

本發明之第23態樣係一種蒸鍍方法，其係使蒸鍍材料蒸鍍於基板之蒸鍍材料之蒸鍍方法，且具備如下步驟：準備藉由如上述第22態樣之蒸鍍罩裝置之製造方法製造之蒸鍍罩裝置；準備上述基板；將上述基板設置於上述蒸鍍罩裝置之上述罩上；以及使上述蒸鍍材料蒸鍍於設置在上述罩上之上述基板。A twenty-third aspect of the present invention is a vapor deposition method for vapor-depositing a vapor-depositing material on a substrate, and includes the step of preparing the vapor-deposition cover as described in the twenty-second aspect above. A vapor deposition hood device manufactured by a method of manufacturing a device; preparing the substrate; placing the substrate on the cover of the vapor deposition hood device; and vapor-depositing the vapor deposition material on the substrate provided on the cover.

本發明之第24態樣亦可為藉由如上述第12態樣至上述第21態樣中任一態樣之蒸鍍罩之製造方法製造之蒸鍍罩。The 24th aspect of this invention may be the vapor deposition cover manufactured by the manufacturing method of the vapor deposition cover of any one of the said 12th aspect to the said 21st aspect.

本發明之第25態樣亦可為藉由如上述第22態樣之蒸鍍罩裝置之製造方法製造之蒸鍍罩裝置。The 25th aspect of this invention may be the vapor deposition hood apparatus manufactured by the manufacturing method of the vapor deposition hood apparatus as the 22nd aspect mentioned above.

根據本發明之實施形態，可抑制蒸鍍罩產生皺褶或變形。According to the embodiment of the present invention, wrinkling and deformation of the vapor deposition cover can be suppressed.

於本說明書及本圖式中，只要未特別說明，則「板」、「片」、「膜」等用語並非僅基於稱謂差異而相互區別者。例如，「板」係亦包含如可稱作片或膜之構件之概念。又，「面(單面、膜面)」係指於整體且全局觀察成為對象之板狀(片狀、膜狀)之構件之情形時，與成為對象之板狀構件(片狀構件、膜狀構件)之平面方向一致之面。又，對板狀(片狀、膜狀)之構件使用之法線方向係指相對於該構件之面(單面、膜面)之法線方向。進而，本說明書中使用之、形狀或幾何學條件以及對其等之程度進行特定之例如「平行」或「正交」等用語或長度或角度之值等並不受嚴格意義之束縛，包含可期待相同功能之程度之範圍而解釋。In the present specification and the drawings, unless otherwise specified, terms such as "plate", "sheet", and "film" are not distinguished from each other only based on the difference in designation. For example, "plate" also includes the concept of members such as sheets or films. In addition, "surface (one-sided, film surface)" refers to the situation of the target plate-like (sheet-like, film-like) member when viewed as a whole and globally, and the target plate-like member (sheet-like member, film) (shaped member) with the same plane direction. In addition, the normal direction used for a plate-shaped (sheet-shaped, film-shaped) member refers to the normal direction with respect to the surface (single surface, film surface) of the member. Further, the terms used in this specification, the shape or geometric conditions, and the terms such as "parallel" or "orthogonal", or the value of length or angle, which specify the degree of the same, are not limited in the strict sense, including possible Expected to explain the extent of the same function.

於本說明書及本圖式中，只要未特別說明，則形狀或幾何學條件以及對其等之程度進行特定之例如「平行」或「正交」等用語或長度或角度之值等並不受嚴格意義之束縛，包含可期待相同功能之程度之範圍而解釋。In this specification and the drawings, unless otherwise specified, terms such as "parallel" or "orthogonal", or values of lengths or angles, which specify the shape or geometric conditions and the degree of the same, are not subject to change. Bounds in the strict sense are interpreted to include the extent to which the same function can be expected.

於本說明書及本圖式中，於某構件或某區域等之某構成設為其他構件或其他區域等之其他構成之「上(或下)」、「上側(或下側)」、或「上方(或下方)」之情形時，只要未特別說明，則不僅包含某構成與其他構成直接相接之情形亦包含於某構成與其他構成之間包含另一構成之情形而解釋。又，只要未特別說明，則雖有使用上(或上側或上方)或下(或下側、下方)之語句進行說明之情形，但上下方向亦可反轉。In this specification and this drawing, a certain structure of a certain member or a certain area is set as "upper (or lower)", "upper side (or lower side)", or "upper (or lower)", "upper side (or lower side)", or "above (or lower side)" of other elements or other structures of other regions, etc. "Above (or below)", unless otherwise specified, not only includes a situation in which a certain component is directly connected to other components, but also includes a situation in which another component is included between a certain component and other components. In addition, unless otherwise specified, the upper (or upper side or upper side) or the lower side (or lower side, lower side) may be used for description, but the vertical direction may be reversed.

於本說明書及本圖式中，只要未特別說明，則有對同一部分或具有相同功能之部分標附同一符號或類似符號並省略反覆說明之情形。又，有圖式之尺寸比率為了便於說明而與實際比率不同之情形或將構成之一部分自圖式省略之情形。In this specification and the drawings, unless otherwise specified, the same part or part having the same function is denoted by the same symbol or a similar symbol, and repeated explanations are omitted. In addition, there are cases where the dimension ratios in the drawings are different from the actual ratios for convenience of explanation, or a part of the configuration is omitted from the drawings.

於本說明書及本圖式中，只要未特別說明，則可於不產生矛盾之範圍內與其他實施形態或變化例組合。又，其他實施形態彼此或其他實施形態與變化例亦可於不產生矛盾之範圍內組合。又，變化例彼此亦可於不產生矛盾之範圍內組合。In the present specification and the drawings, unless otherwise specified, it can be combined with other embodiments or modified examples within a range that does not cause conflict. In addition, other embodiments or other embodiments and modifications may be combined within a range that does not contradict each other. In addition, the modification examples may be combined within a range where no contradiction occurs.

於本說明書及本圖式中，只要未特別說明，則於就製造方法等方法揭示複數個步驟之情形時，亦可於所揭示之步驟之間實施未揭示之其他步驟。又，所揭示之步驟之順序於不產生矛盾之範圍內任意。In the present specification and the drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps not disclosed may be implemented between the disclosed steps. Also, the order of the disclosed steps is arbitrary within the scope of no contradiction.

於本說明書及本圖式中，只要未特別說明，則記號「～」所表達之數值範圍包含置於符號「～」之前後之數值。例如，「34～38質量%」之表達所劃定之數值範圍與「34質量%以上且38質量%以下」之表達所劃定之數值範圍相同。In this specification and the drawings, unless otherwise specified, the numerical range represented by the symbol "~" includes the numerical values placed before and after the symbol "~". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

於本說明書及本圖式中，「俯視」係指於整體且全局觀察對稱之板狀構件之情形時，自與板狀構件之平面方向正交之法線方向觀察到之狀態。例如，某板狀構件「俯視時具有矩形狀之形狀」係指於自法線方向觀察該構件時，該構件具有矩形狀之形狀。In this specification and this drawing, "planning" refers to the state observed from the normal direction perpendicular to the plane direction of the plate-shaped member when the symmetrical plate-shaped member is viewed as a whole and globally. For example, a certain plate-shaped member "has a rectangular shape in plan view" means that the member has a rectangular shape when the member is viewed from the normal direction.

於本說明書之一實施形態中，列舉與蒸鍍罩或其製造方法相關之例進行說明，該蒸鍍罩用於在製造有機EL顯示裝置時使有機材料以所需圖案於基板上圖案化。但，並不限定於此種應用，亦可對用於各種用途之蒸鍍罩應用本實施形態。In one embodiment of the present specification, an example related to a vapor deposition cover for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device or a manufacturing method thereof will be described. However, the present embodiment is not limited to such an application, and the present embodiment can be applied to a vapor deposition cover used for various applications.

以下，一面參照圖式一面詳細地對本發明之一實施形態進行說明。再者，以下所示之實施形態係本發明之實施形態之一例，本發明並不僅限定於該等實施形態而解釋。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. In addition, the embodiment shown below is an example of the embodiment of this invention, and this invention is not limited only to these embodiment, and should be construed.

首先，參照圖1對實施使蒸鍍材料蒸鍍於對象物上之蒸鍍處理的蒸鍍裝置90進行說明。如圖1所示，蒸鍍裝置90亦可於其內部具備蒸鍍源(例如坩堝94)、加熱器96、及蒸鍍罩裝置10。又，蒸鍍裝置90亦可進而具備用以使蒸鍍裝置90之內部成為真空氣氛之排氣機構(未圖示)。坩堝94收容有機發光材料等蒸鍍材料98。加熱器96對坩堝94進行加熱而於真空氣氛下使蒸鍍材料98蒸發。蒸鍍罩裝置10以與坩堝94對向之方式配置。First, with reference to FIG. 1, the vapor deposition apparatus 90 which performs the vapor deposition process of vapor-depositing a vapor deposition material on an object is demonstrated. As shown in FIG. 1 , the vapor deposition apparatus 90 may also include a vapor deposition source (eg, a crucible 94 ), a heater 96 , and a vapor deposition hood apparatus 10 therein. Moreover, the vapor deposition apparatus 90 may further be equipped with the exhaust mechanism (not shown) for making the inside of the vapor deposition apparatus 90 into a vacuum atmosphere. The crucible 94 accommodates a vapor deposition material 98 such as an organic light-emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 in a vacuum atmosphere. The vapor deposition hood device 10 is arranged so as to face the crucible 94 .

如圖1所示，蒸鍍罩裝置10亦可具備蒸鍍罩20、及與蒸鍍罩20之下述支持體40接合之框架15。於該情形時，蒸鍍罩20可以蒸鍍罩20不會撓曲之方式，以於其面方向上被拉伸之狀態由框架15支持，或者蒸鍍罩20亦可於不於其面方向上被拉伸之狀況下由框架15支持。如圖1所示，蒸鍍罩裝置10亦可以蒸鍍罩20面對供蒸鍍材料98附著之對象物即被蒸鍍基板(例如有機EL基板)92之方式配置於蒸鍍裝置90內。As shown in FIG. 1 , the vapor deposition cover apparatus 10 may further include a vapor deposition cover 20 and a frame 15 joined to the following support body 40 of the vapor deposition cover 20 . In this case, the vapor deposition cover 20 may be supported by the frame 15 in a state of being stretched in the surface direction in such a way that the vapor deposition cover 20 will not be deflected, or the vapor deposition cover 20 may be not in the surface direction. It is supported by frame 15 in a stretched condition. As shown in FIG. 1 , the vapor deposition cover apparatus 10 may be disposed in the vapor deposition apparatus 90 so that the vapor deposition cover 20 faces the object to which the vapor deposition material 98 is attached, that is, the vapor deposition substrate (eg, organic EL substrate) 92 .

如圖1所示，蒸鍍罩裝置10亦可具備配置於被蒸鍍基板92之與蒸鍍罩20相反之側之面之磁石93。藉由設置磁石93，可利用磁力使蒸鍍罩20向磁石93側牽引而使蒸鍍罩20密接於被蒸鍍基板92。As shown in FIG. 1 , the vapor deposition cover apparatus 10 may include a magnet 93 arranged on the surface of the vapor deposition target substrate 92 on the opposite side to the vapor deposition cover 20 . By providing the magnet 93 , the vapor deposition cover 20 can be brought into close contact with the substrate 92 to be vapor-deposited by pulling the vapor deposition cover 20 toward the magnet 93 by magnetic force.

其次，對蒸鍍罩裝置10之蒸鍍罩20進行說明。如圖1所示，蒸鍍罩20亦可具備：罩30，其具有形成有第1貫通孔35之鍍覆層31；及支持體40，其與罩30接合，形成有俯視時與第1貫通孔35重疊之第2貫通孔45。其中，罩30之第1貫通孔35亦可形成複數個。Next, the vapor deposition cover 20 of the vapor deposition cover apparatus 10 will be described. As shown in FIG. 1 , the vapor deposition cover 20 may include a cover 30 having a plating layer 31 having a first through hole 35 formed therein, and a support 40 joined to the cover 30 and formed with the first The second through hole 45 in which the through hole 35 overlaps. Among them, a plurality of first through holes 35 of the cover 30 may be formed.

如圖1所示，罩30亦可具有第1面30a、及構成與第1面30a為相反側之面之第2面30b。於圖示之例中，罩30配置於被蒸鍍基板92與坩堝94之間。罩30亦可使其第1面30a面對被蒸鍍基板92之下表面，換言之，亦可使其第2面30b面對坩堝94，而支持於蒸鍍裝置90內，從而用於蒸鍍材料98向被蒸鍍基板92之蒸鍍。於圖1所示之蒸鍍裝置90中，自坩堝94蒸發而自罩30之第2面30b側到達至蒸鍍罩20之蒸鍍材料98通過支持體40之第2貫通孔45及罩30之第1貫通孔35而附著於被蒸鍍基板92。藉此，可以與罩30之第1貫通孔35之位置對應之所需圖案使蒸鍍材料98於被蒸鍍基板92之表面成膜。As shown in FIG. 1, the cover 30 may have the 1st surface 30a, and the 2nd surface 30b which comprises the surface on the opposite side to the 1st surface 30a. In the illustrated example, the cover 30 is disposed between the substrate 92 to be vapor-deposited and the crucible 94 . The cover 30 can also have its first surface 30a facing the lower surface of the substrate 92 to be vapor-deposited, in other words, its second surface 30b can also have its second surface 30b facing the crucible 94, and can be supported in the vapor deposition device 90 for vapor deposition The material 98 is vapor-deposited on the substrate 92 to be vapor-deposited. In the vapor deposition apparatus 90 shown in FIG. 1 , the vapor deposition material 98 evaporated from the crucible 94 and reached from the second surface 30 b side of the cover 30 to the vapor deposition cover 20 passes through the second through holes 45 of the support 40 and the cover 30 . The first through holes 35 are attached to the substrate 92 to be vapor-deposited. Thereby, the vapor deposition material 98 can be formed into a film on the surface of the substrate 92 to be vapor deposited in a desired pattern corresponding to the position of the first through hole 35 of the cover 30 .

圖2係表示使用圖1之蒸鍍裝置90製造之有機EL顯示裝置100之剖視圖。有機EL顯示裝置100亦可具備被蒸鍍基板(有機EL基板)92、及包含呈圖案狀設置之蒸鍍材料98之像素。再者，於圖2之有機EL顯示裝置100中，省略對包含蒸鍍材料98之像素施加電壓之電極等。又，可於在有機EL基板92上呈圖案狀設置蒸鍍材料98之蒸鍍步驟之後，於圖2之有機EL顯示裝置100進而設置有機EL顯示裝置之其他構成要素。因此，圖2之有機EL顯示裝置100亦可稱作有機EL顯示裝置之中間體。FIG. 2 is a cross-sectional view showing the organic EL display device 100 manufactured using the vapor deposition apparatus 90 of FIG. 1 . The organic EL display device 100 may include a substrate to be vapor-deposited (organic EL substrate) 92 and pixels including the vapor-deposited material 98 arranged in a pattern. In addition, in the organic EL display device 100 of FIG. 2, the electrode etc. which apply a voltage to the pixel containing the vapor deposition material 98 are omitted. Further, after the vapor deposition step of providing the vapor deposition material 98 in a pattern on the organic EL substrate 92, other constituent elements of the organic EL display device may be further provided on the organic EL display device 100 of FIG. 2 . Therefore, the organic EL display device 100 of FIG. 2 can also be referred to as an intermediate of the organic EL display device.

於欲利用複數個顏色進行彩色顯示之情形時，分別準備搭載有與各顏色對應之蒸鍍罩裝置10之蒸鍍裝置90，將被蒸鍍基板92依序投入各蒸鍍裝置90中。藉此，例如可依序使紅色用之有機發光材料、綠色用之有機發光材料及藍色用之有機發光材料蒸鍍於被蒸鍍基板92上。When a plurality of colors are to be used for color display, the vapor deposition apparatuses 90 equipped with the vapor deposition cover apparatuses 10 corresponding to the respective colors are prepared, and the substrates 92 to be vapor deposited are sequentially put into the respective vapor deposition apparatuses 90 . Thereby, for example, the organic light-emitting material for red, the organic light-emitting material for green, and the organic light-emitting material for blue can be sequentially vapor-deposited on the substrate 92 to be vapor-deposited.

蒸鍍處理有於成為高溫氣氛之蒸鍍裝置90之內部實施之情形。於該情形時，於蒸鍍處理期間，亦將蒸鍍裝置90之內部所保持之蒸鍍罩20、框架15及被蒸鍍基板92加熱。此時，蒸鍍罩20之罩30及支持體40、框架15以及被蒸鍍基板92會表現出基於各者之熱膨脹係數之尺寸變化之行為。於該情形時，若罩30、支持體40及框架15與被蒸鍍基板92之熱膨脹係數顯著不同，則會產生其等之尺寸變化之差異所致位置偏移，結果會導致附著於被蒸鍍基板92上之蒸鍍材料之尺寸精度或位置精度下降。The vapor deposition process may be performed inside the vapor deposition apparatus 90 in a high-temperature atmosphere. In this case, during the vapor deposition process, the vapor deposition cover 20 , the frame 15 , and the vapor deposition substrate 92 held inside the vapor deposition apparatus 90 are also heated. At this time, the cover 30 of the vapor deposition cover 20 , the support 40 , the frame 15 , and the substrate 92 to be vapor deposited exhibit dimensional changes based on their thermal expansion coefficients. In this case, if the thermal expansion coefficients of the cover 30, the support body 40 and the frame 15 and the substrate 92 to be vapor-deposited are significantly different, there will be a positional shift caused by the difference in their dimensional changes, resulting in adhesion to the vapor-deposited substrate 92. The dimensional accuracy or positional accuracy of the vapor deposition material on the plating substrate 92 decreases.

為了解決此種問題，較佳為罩30、支持體40及框架15之熱膨脹係數為與被蒸鍍基板92之熱膨脹係數同等之值。例如，於使用玻璃基板作為被蒸鍍基板92之情形時，可使用包含鎳之鐵合金作為罩30、支持體40及框架15之主要材料。例如，作為構成罩30、支持體40及框架15之構件之材料，可使用包含30質量%以上54質量%以下之鎳之鐵合金。作為包含鎳之鐵合金之具體例，可列舉包含34質量%以上38質量%以下之鎳之鎳鋼材、除30質量%以上34質量%以下之鎳以外進而包含鈷之超級鎳鋼材、包含38質量%以上54質量%以下之鎳之低熱膨脹Fe-Ni系鍍覆合金等。In order to solve such a problem, it is preferable that the thermal expansion coefficients of the cover 30 , the support body 40 and the frame 15 are equal to the thermal expansion coefficients of the vapor-deposited substrate 92 . For example, in the case of using a glass substrate as the substrate 92 to be vapor-deposited, an iron alloy containing nickel can be used as the main material of the cover 30 , the support 40 and the frame 15 . For example, as a material of the members constituting the cover 30 , the support body 40 and the frame 15 , an iron alloy containing nickel in an amount of 30 mass % or more and 54 mass % or less can be used. Specific examples of the iron alloy containing nickel include nickel steel materials containing 34 mass % or more and 38 mass % or less nickel, super nickel steel materials containing cobalt in addition to 30 mass % or more and 34 mass % or less nickel, and 38 mass % or less. Low thermal expansion Fe—Ni based plating alloys of nickel containing more than 54 mass % or less.

再者，於蒸鍍處理時，在罩30、支持體40、框架15及被蒸鍍基板92之溫度未達到高溫之情形下，亦可不使罩30、支持體40及框架15之熱膨脹係數為與被蒸鍍基板92之熱膨脹係數同等之值。於該情形時，亦可使用上述鐵合金以外之材料作為構成罩30及支持體40之材料。例如，亦可使用包含鉻之鐵合金等上述包含鎳之鐵合金以外之鐵合金。作為包含鉻之鐵合金，例如可使用所謂之稱作不鏽鋼之鐵合金。又，亦可使用鎳或鎳-鈷合金等鐵合金以外之金屬或合金。Furthermore, during the vapor deposition process, when the temperature of the cover 30, the support 40, the frame 15 and the substrate 92 to be vapor-deposited does not reach a high temperature, the thermal expansion coefficient of the cover 30, the support 40 and the frame 15 may not be set to A value equivalent to the thermal expansion coefficient of the substrate 92 to be vapor-deposited. In this case, a material other than the above-mentioned iron alloy may be used as the material constituting the cover 30 and the support body 40 . For example, iron alloys other than the above-mentioned nickel-containing iron alloys, such as an iron alloy containing chromium, can also be used. As the iron alloy containing chromium, a so-called iron alloy called stainless steel can be used, for example. In addition, metals or alloys other than iron alloys such as nickel and nickel-cobalt alloys may also be used.

其次，利用圖1及圖3至圖6B進而詳細地對蒸鍍罩20之罩30及支持體40、以及框架15進行說明。Next, the cover 30 of the vapor deposition cover 20 , the support body 40 , and the frame 15 will be further described in detail with reference to FIGS. 1 and 3 to 6B .

首先，詳細地對罩30進行說明。該罩30亦可為藉由鍍覆處理而製作者。如圖3所示，罩30亦可具有俯視時大致矩形狀之形狀。該罩30亦可具備構成罩30之外緣30e之框狀耳部17、及經耳部17包圍之中間部18。其中，耳部17係利用蒸鍍罩20之蒸鍍步驟時安裝於支持體40之部分。再者，該耳部17並非意圖向有機EL基板92蒸鍍之蒸鍍材料通過之區域。First, the cover 30 will be described in detail. The cover 30 can also be produced by a plating process. As shown in FIG. 3 , the cover 30 may have a substantially rectangular shape in plan view. The cover 30 may also include a frame-shaped ear portion 17 constituting the outer edge 30 e of the cover 30 , and an intermediate portion 18 surrounded by the ear portion 17 . Among them, the ear portion 17 is a part attached to the support body 40 during the vapor deposition step of the vapor deposition cover 20 . Furthermore, the ear portion 17 is not intended to pass through the vapor deposition material deposited on the organic EL substrate 92 .

又，如圖3至圖5所示，蒸鍍罩20之中間部18亦可包含以規則排列形成有第1貫通孔35(參照圖4及圖5)之有效區域22、及包圍有效區域22之周圍區域23。周圍區域23係用以支持有效區域22之區域，並非意圖向有機EL基板92蒸鍍之蒸鍍材料98通過之區域。另一方面，罩30之有效區域22成為用於有機發光材料之蒸鍍之蒸鍍罩20中面對有機發光材料蒸鍍而形成像素之成為有機EL基板92之顯示區域的區域蒸鍍罩20內之區域。但，亦可根據各種目的，於周圍區域23形成貫通孔或凹部。於圖3所示之例中，各有效區域22具有俯視時大致四邊形之形狀、更準確而言俯視時大致矩形狀之輪廓。再者，雖未圖示，但各有效區域22可根據有機EL基板92之顯示區域之形狀而具有各種形狀之輪廓。即，各有效區域22亦可具有與有機EL顯示裝置100所顯示之各應用軟體之顯示區域對應之輪廓，於將有機EL顯示裝置100用於例如手錶之情形時，各有效區域22亦可具有圓形狀之輪廓。Further, as shown in FIGS. 3 to 5 , the intermediate portion 18 of the vapor deposition cover 20 may include an effective area 22 in which the first through holes 35 (see FIGS. 4 and 5 ) are formed in a regular arrangement, and a surrounding effective area 22 surrounding area 23. The surrounding area 23 is an area for supporting the effective area 22 , and is not an area intended to pass through the vapor deposition material 98 vapor-deposited on the organic EL substrate 92 . On the other hand, the effective area 22 of the cover 30 becomes the area vapor deposition cover 20 for the vapor deposition of the organic light emitting material in the vapor deposition cover 20 which is the display area of the organic EL substrate 92 facing the vapor deposition of the organic light emitting material to form the pixel. area within. However, through holes or recesses may be formed in the peripheral region 23 according to various purposes. In the example shown in FIG. 3 , each effective area 22 has a substantially quadrangular shape in plan view, or more precisely, a substantially rectangular outline in plan view. Furthermore, although not shown, each of the effective regions 22 may have contours of various shapes according to the shape of the display region of the organic EL substrate 92 . That is, each effective area 22 may also have an outline corresponding to the display area of each application software displayed by the organic EL display device 100 . When the organic EL display device 100 is used in a watch, for example, each effective area 22 may also have an outline corresponding to the display area of each application software displayed by the organic EL display device 100 Outline of round shape.

如圖3所示，蒸鍍罩20之複數個有效區域22亦可沿相互正交之二方向隔開特定間隔而排列。於圖示之例中，一個有效區域22與一個有機EL顯示裝置對應。即，根據圖3及圖4所示之蒸鍍罩裝置10(罩30)，可進行多面蒸鍍。又，如圖5所示，形成於各有效區域22之複數個第1貫通孔35亦可於該有效區域22沿相互正交之二方向分別以特定間距排列。As shown in FIG. 3 , the plurality of effective regions 22 of the vapor deposition cover 20 can also be arranged along two mutually orthogonal directions with a specific interval therebetween. In the illustrated example, one active area 22 corresponds to one organic EL display device. That is, according to the vapor deposition cover apparatus 10 (cover 30) shown in FIG. 3 and FIG. 4, multi-surface vapor deposition can be performed. Furthermore, as shown in FIG. 5 , the plurality of first through holes 35 formed in each effective area 22 may be arranged in the effective area 22 with a specific pitch in two directions orthogonal to each other.

其次，參照圖6A，對罩30之鍍覆層31進行說明。如圖6A所示，罩30之鍍覆層31亦可包含以特定圖案設置有第1開口部30c之第1金屬層32、及設置有與第1開口部30c連通之第2開口部30d之第2金屬層37。於圖6A所示之例中，第1金屬層32構成罩30之第1面30a，第2金屬層37構成罩30之第2面30b。Next, the plating layer 31 of the cover 30 will be described with reference to FIG. 6A . As shown in FIG. 6A , the plating layer 31 of the cover 30 may also include a first metal layer 32 provided with a first opening 30c in a specific pattern, and a metal layer 32 provided with a second opening 30d communicating with the first opening 30c The second metal layer 37 . In the example shown in FIG. 6A , the first metal layer 32 constitutes the first surface 30 a of the cover 30 , and the second metal layer 37 constitutes the second surface 30 b of the cover 30 .

於本實施形態中，亦可藉由第1開口部30c與第2開口部30d相互連通，而構成貫通罩30之第1貫通孔35。於該情形時，罩30之第1面30a側之第1貫通孔35之開口尺寸或開口形狀亦可由第1金屬層32之第1開口部30c劃定。另一方面，罩30之第2面30b側之第1貫通孔35之開口尺寸或開口形狀亦可由第2金屬層37之第2開口部30d劃定。換言之，亦可對第1貫通孔35賦予由第1金屬層32之第1開口部30c所劃定之形狀、及由第2金屬層37之第2開口部30d所劃定之形狀之兩者。In the present embodiment, the first through hole 35 penetrating the cover 30 may be constituted by the first opening 30c and the second opening 30d communicating with each other. In this case, the opening size or opening shape of the first through hole 35 on the first surface 30a side of the cover 30 may be defined by the first opening portion 30c of the first metal layer 32 . On the other hand, the opening size or opening shape of the first through hole 35 on the second surface 30b side of the cover 30 may be defined by the second opening portion 30d of the second metal layer 37 . In other words, both the shape defined by the first opening 30c of the first metal layer 32 and the shape defined by the second opening 30d of the second metal layer 37 may be given to the first through hole 35 .

如圖5所示，構成第1貫通孔35之第1開口部30c或第2開口部30d亦可俯視時成為大致多邊形狀。此處，示出第1開口部30c及第2開口部30d成為大致四邊形狀、更具體而言大致正方形狀之例。又，雖未圖示，但第1開口部30c或第2開口部30d亦可成為大致六邊形狀或大致八邊形狀等其他大致多邊形狀。再者，「大致多邊形狀」係指包含使多邊形之角部成圓角之形狀之概念。又，雖未圖示，但第1開口部30c或第2開口部30d亦可成為圓形狀。又，只要具有俯視時第2開口部30d包圍第1開口部30c之輪廓，則第1開口部30c之形狀與第2開口部30d之形狀無須成為相似形。As shown in FIG. 5, the 1st opening part 30c or the 2nd opening part 30d which comprises the 1st through-hole 35 may have a substantially polygonal shape in planar view. Here, the example in which the 1st opening part 30c and the 2nd opening part 30d have a substantially square shape, more specifically, a substantially square shape, is shown. In addition, although not shown in figure, the 1st opening part 30c or the 2nd opening part 30d may have other substantially polygonal shapes, such as a substantially hexagonal shape or a substantially octagonal shape. In addition, "substantially polygonal shape" means the concept which includes the shape which rounded the corner part of a polygon. In addition, although not shown in figure, the 1st opening part 30c or the 2nd opening part 30d may have a circular shape. Moreover, the shape of the first opening 30c and the shape of the second opening 30d do not need to be similar as long as the second opening 30d has an outline that surrounds the first opening 30c in plan view.

於圖6A中，符號41表示將第1金屬層32與第2金屬層37連接之連接部。又，符號S0表示第1金屬層32與第2金屬層37之連接部41中之第1貫通孔35之尺寸。再者，於圖6A中，示出第1金屬層32與第2金屬層37相接之例，但並不限定於此，亦可於第1金屬層32與第2金屬層37之間介置其他層。例如，亦可於第1金屬層32與第2金屬層37之間設置用以促進第1金屬層32上之第2金屬層37之析出之觸媒層。In FIG. 6A , reference numeral 41 denotes a connection portion that connects the first metal layer 32 and the second metal layer 37 . In addition, the symbol S0 represents the size of the first through hole 35 in the connection portion 41 of the first metal layer 32 and the second metal layer 37 . Furthermore, in FIG. 6A , an example in which the first metal layer 32 and the second metal layer 37 are in contact is shown, but it is not limited to this, and an interposition between the first metal layer 32 and the second metal layer 37 is also possible. place other layers. For example, a catalyst layer for promoting the precipitation of the second metal layer 37 on the first metal layer 32 may also be provided between the first metal layer 32 and the second metal layer 37 .

如圖6A所示，第2面30b中之第1貫通孔35(第2開口部30d)之開口尺寸S2亦可大於第1面30a中之第1貫通孔35(第1開口部30c)之開口尺寸S1。以下，對如此構成第1金屬層32及第2金屬層37之優點進行說明。As shown in FIG. 6A , the opening size S2 of the first through hole 35 (second opening 30d ) in the second surface 30b may be larger than the opening size S2 of the first through hole 35 (first opening 30c ) in the first surface 30a Opening size S1. Hereinafter, the advantages of configuring the first metal layer 32 and the second metal layer 37 in this manner will be described.

自罩30之第2面30b側朝向罩30飛來之蒸鍍材料98依序通過第1貫通孔35之第2開口部30d及第1開口部30c而附著於有機EL基板92。有機EL基板92中之供蒸鍍材料98附著之區域主要由第1面30a中之第1貫通孔35之開口尺寸S1或開口形狀決定。然，如圖6A中自第2面30b側朝向第1面30a之箭頭所示，蒸鍍材料98亦有不僅自坩堝94朝向有機EL基板92沿罩30之法線方向N移動亦在相對於罩30之法線方向N大幅傾斜之方向上移動之情況。此處，假使第2面30b中之第1貫通孔35之開口尺寸S2與第1面30a中之第1貫通孔35之開口尺寸S1相同，則在相對於罩30之法線方向N大幅傾斜之方向上移動之蒸鍍材料98大多會於通過第1貫通孔35而到達至有機EL基板92之前，到達並附著於第1貫通孔35之第2開口部30d之壁面36。因此，為了提高蒸鍍材料98之利用效率，可謂較佳為增大第2開口部30d之開口尺寸S2。The vapor deposition material 98 flying toward the cover 30 from the second surface 30b side of the cover 30 passes through the second opening 30d and the first opening 30c of the first through-hole 35 in order and adheres to the organic EL substrate 92 . The region to which the vapor deposition material 98 is attached in the organic EL substrate 92 is mainly determined by the opening size S1 or the opening shape of the first through hole 35 in the first surface 30a. However, as shown by the arrow from the second surface 30b side toward the first surface 30a in FIG. 6A, the vapor deposition material 98 not only moves from the crucible 94 toward the organic EL substrate 92 along the normal direction N of the cover 30, but also moves relative to the normal direction N of the cover 30. The case where the normal direction N of the cover 30 is moved in a direction in which the normal direction N is greatly inclined. Here, if the opening dimension S2 of the first through-hole 35 in the second surface 30b is the same as the opening dimension S1 of the first through-hole 35 in the first surface 30a, it is greatly inclined in the normal direction N of the cover 30 The vapor deposition material 98 moving in the direction often reaches and adheres to the wall surface 36 of the second opening 30d of the first through hole 35 before reaching the organic EL substrate 92 through the first through hole 35 . Therefore, in order to improve the utilization efficiency of the vapor deposition material 98, it can be said that it is preferable to increase the opening size S2 of the second opening portion 30d.

於圖6A中，通過罩30之第2面30b側之第1貫通孔35(第2開口部30d)之端部38之蒸鍍材料98之路徑且可到達至有機EL基板92之路徑之中，相對於罩30之法線方向N構成之角度最小之路徑由符號L1表示。又，路徑L1與罩30之法線方向N構成之角度由符號θ1表示。為了使斜向移動之蒸鍍材料98不到達至第2開口部30d之壁面36而是儘可能到達至有機EL基板92，增大角度θ1較為有利。例如較佳為使角度θ1為45°以上。In FIG. 6A, the path of the vapor deposition material 98 passing through the end 38 of the first through hole 35 (second opening 30d) on the second surface 30b side of the cover 30 can reach the path to the organic EL substrate 92 , the path with the smallest angle with respect to the normal direction N of the cover 30 is represented by the symbol L1. In addition, the angle formed by the path L1 and the normal line direction N of the cover 30 is represented by the symbol θ1. It is advantageous to increase the angle θ1 so that the vapor deposition material 98 moving obliquely does not reach the wall surface 36 of the second opening 30d but reaches the organic EL substrate 92 as much as possible. For example, it is preferable to set the angle θ1 to be 45° or more.

上述開口尺寸S0、S1、S2係考慮有機EL顯示裝置之像素密度或上述角度θ1之所需值等而適當設定。例如，於製作400 ppi以上之像素密度之有機EL顯示裝置之情形時，連接部41中之第1貫通孔35之開口尺寸S0可於20 μm以上60 μm以下之範圍內設定。又，第1面30a中之第1開口部30c之開口尺寸S1可於10 μm以上50 μm以下之範圍內設定，第2面30b中之第2開口部30d之開口尺寸S2可於15 μm以上80 μm以下之範圍內設定。The above-mentioned aperture sizes S0, S1, and S2 are appropriately set in consideration of the pixel density of the organic EL display device, the required value of the above-mentioned angle θ1, and the like. For example, in the case of fabricating an organic EL display device with a pixel density of 400 ppi or more, the opening size S0 of the first through hole 35 in the connecting portion 41 can be set within a range of 20 μm or more and 60 μm or less. In addition, the opening size S1 of the first opening 30c in the first surface 30a can be set within a range of 10 μm or more and 50 μm or less, and the opening size S2 of the second opening 30d in the second surface 30b can be set in the range of 15 μm or more. Set within the range of 80 μm or less.

又，上述罩30之厚度T0可設為例如2.0 μm以上50 μm以下。Moreover, the thickness T0 of the said cover 30 can be made into 2.0 micrometers or more and 50 micrometers or less, for example.

罩30之厚度T0之範圍亦可由包括2.0 μm、5.0 μm、10 μm及15 μm之第1群組、及/或包括20 μm、30 μm、40 μm及50 μm之第2群組決定。罩30之厚度T0之範圍之下限亦可由上述第1群組所含之值中之任意1個決定。例如，罩30之厚度T0之範圍之下限亦可為2.0 μm以上，亦可為5.0 μm以上，亦可為10 μm以上，亦可為15 μm以上。又，罩30之厚度T0之範圍之上限亦可上述第2群組所含之值中之任意1個由決定。例如，罩30之厚度T0之範圍之上限亦可為20 μm以下，亦可為30 μm以下，亦可為40 μm以下，亦可為50 μm以下。罩30之厚度T0之範圍亦可由上述第1群組所含之值中之任意1個與上述第2群組所含之值中之任意1個之組合決定，例如，亦可為2.0 μm以上50 μm以下，亦可為5.0 μm以上40 μm以下，亦可為10 μm以上30 μm以下，亦可為15 μm以上20 μm以下。又，罩30之厚度T0之範圍亦可由上述第1群組所含之值中之任意2個之組合決定，例如，亦可為2.0 μm以上15 μm以下，亦可為2.0 μm以上10 μm以下，亦可為5.0 μm以上15 μm以下，亦可為5.0 μm以上10 μm以下。又，罩30之厚度T0之範圍亦可由上述第2群組所含之值中之任意2個之組合決定，例如，亦可為20 μm以上50 μm以下，亦可為20 μm以上40 μm以下，亦可為30 μm以上50 μm以下，亦可為30 μm以上40 μm以下。The range of the thickness T0 of the cover 30 can also be determined by the first group including 2.0 μm, 5.0 μm, 10 μm and 15 μm, and/or the second group including 20 μm, 30 μm, 40 μm and 50 μm. The lower limit of the range of the thickness T0 of the cover 30 may also be determined by any one of the values included in the above-mentioned first group. For example, the lower limit of the range of the thickness T0 of the cover 30 may be 2.0 μm or more, 5.0 μm or more, 10 μm or more, or 15 μm or more. In addition, the upper limit of the range of the thickness T0 of the cover 30 may be determined by any one of the values included in the above-mentioned second group. For example, the upper limit of the range of the thickness T0 of the cover 30 may be 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness T0 of the cover 30 may also be determined by the combination of any one of the values included in the first group and any one of the values included in the second group, for example, may be 2.0 μm or more 50 μm or less, 5.0 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, or 15 μm or more and 20 μm or less. In addition, the range of the thickness T0 of the cover 30 may be determined by a combination of any two values included in the first group, for example, it may be 2.0 μm or more and 15 μm or less, or 2.0 μm or more and 10 μm or less. , may be 5.0 μm or more and 15 μm or less, or may be 5.0 μm or more and 10 μm or less. In addition, the range of the thickness T0 of the cover 30 may be determined by a combination of any two values included in the second group, for example, it may be 20 μm or more and 50 μm or less, or 20 μm or more and 40 μm or less. , may be 30 μm or more and 50 μm or less, or may be 30 μm or more and 40 μm or less.

其次，詳細地對支持體40進行說明。如圖3所示，支持體40亦可具有俯視時大致矩形狀之形狀。該支持體40於面方向上亦可具有大於罩30之尺寸，俯視時，劃定支持體40之輪廓亦可包圍劃定罩30之輪廓。該支持體40亦可使支持體40之各邊與罩30之各邊對應而安裝於罩30。Next, the support body 40 will be described in detail. As shown in FIG. 3 , the support body 40 may have a substantially rectangular shape in plan view. The support body 40 can also have a size larger than that of the cover 30 in the plane direction. When viewed from above, the outline defining the support body 40 can also surround the outline defining the cover 30 . The support body 40 can also be mounted on the cover 30 so that each side of the support body 40 corresponds to each side of the cover 30 .

又，如上所述，於支持體40形成有複數個第2貫通孔45，第2貫通孔45亦可俯視時大於罩30之有效區域22。又，支持體40之一個第2貫通孔45亦可與罩30之一個有效區域22對應。Furthermore, as described above, the support body 40 is formed with a plurality of second through holes 45 , and the second through holes 45 may be larger than the effective area 22 of the cover 30 in plan view. In addition, one second through hole 45 of the support body 40 may correspond to one effective area 22 of the cover 30 .

如圖3所示，第2貫通孔45亦可具有例如俯視時大致四邊形之形狀、更準確而言俯視時大致矩形狀之輪廓。再者，雖未圖示，但各第2貫通孔45可根據被蒸鍍基板(有機EL基板)92之顯示區域之形狀而具有各種形狀之輪廓。例如各第2貫通孔45亦可具有圓形狀之輪廓。於圖3中示出各第2貫通孔45具有相同之俯視形狀者，但並不限定於此，各第2貫通孔45亦可具有互不相同之開口部形狀。換言之，支持體40亦可具備具有互不相同之俯視形狀之複數個第2貫通孔45。As shown in FIG. 3 , the second through hole 45 may have, for example, a substantially quadrangular shape in plan view, or more precisely, a substantially rectangular outline in plan view. In addition, although not shown in figure, each 2nd through-hole 45 can have the outline of various shapes according to the shape of the display area of the substrate to be vapor-deposited (organic EL substrate) 92 . For example, each second through hole 45 may have a circular outline. 3 shows that each of the second through holes 45 has the same shape in plan view, but is not limited to this, and each of the second through holes 45 may have mutually different opening shapes. In other words, the support body 40 may be provided with a plurality of second through holes 45 having mutually different plan shapes.

亦可於該第2貫通孔45之周圍設置支持區域46，該支持區域46亦可以支持罩30之周圍區域23之方式構成。藉此，支持體40可以包圍罩30之有效區域22之方式支持罩30，因此可有效抑制罩30產生皺褶或變形。再者，支持區域46並非意圖向有機EL基板92蒸鍍之蒸鍍材料98通過之區域。A support area 46 may also be provided around the second through hole 45 , and the support area 46 may also be configured to support the surrounding area 23 of the cover 30 . In this way, the support body 40 can support the cover 30 by surrounding the effective area 22 of the cover 30 , so that the cover 30 can be effectively restrained from being wrinkled or deformed. Furthermore, the support region 46 is not intended to pass through the vapor deposition material 98 deposited on the organic EL substrate 92 .

其次，參照圖6B，更詳細地對支持體40進行說明。如圖6B所示，複數個第2貫通孔45亦可自成為沿支持體40之法線方向n(罩30之法線方向N)之一側(於圖示之例中為面對罩30之第2面30b之側)之第1面400a向成為沿支持體40之法線方向n之另一側之第2面400b貫通。於圖示之例中，如下文所詳細敍述，藉由蝕刻於成為支持體40之法線方向n上之一側之金屬板64之第1面64a形成第1凹部401，於成為支持體40之法線方向n上之另一側之金屬板64之第2面64b形成第2凹部402。第1凹部401亦可與第2凹部402連接而藉此使第2凹部402與第1凹部401以互通之方式形成。第2貫通孔45亦可由第2凹部402、及與第2凹部402連接之第1凹部401構成。Next, referring to FIG. 6B , the support body 40 will be described in more detail. As shown in FIG. 6B , the plurality of second through holes 45 may also be formed from one side (in the illustrated example, facing the cover 30 ) along the normal direction n of the support body 40 (the normal direction N of the cover 30 ). The 1st surface 400a of the side of the 2nd surface 30b) penetrates to the 2nd surface 400b which becomes the other side along the normal line direction n of the support body 40. In the illustrated example, as described in detail below, the first recess 401 is formed by etching the first surface 64a of the metal plate 64 on one side in the normal direction n of the support 40, and the support 40 is formed. The second concave portion 402 is formed on the second surface 64b of the metal plate 64 on the other side in the normal direction n. The first concave portion 401 can also be connected to the second concave portion 402 so that the second concave portion 402 and the first concave portion 401 are formed in a mutually communicating manner. The second through hole 45 may be constituted by the second recess 402 and the first recess 401 connected to the second recess 402 .

於本發明中，支持體40之厚度T1成為0.20 mm以上2.0 mm以下。藉由支持體40之厚度T1為0.20 mm以上，可提昇蒸鍍罩20之剛性。藉此，可抑制罩30產生皺褶或變形。又，藉由支持體40之厚度T1為2.0 mm以下，可抑制於如下所述般自與支持體40接合之罩30將基材51剝離時不能將基材51剝離之缺陷。In the present invention, the thickness T1 of the support 40 is 0.20 mm or more and 2.0 mm or less. By setting the thickness T1 of the support body 40 to be 0.20 mm or more, the rigidity of the vapor deposition cover 20 can be improved. Thereby, wrinkling and deformation of the cover 30 can be suppressed. Moreover, when the thickness T1 of the support body 40 is 2.0 mm or less, the defect that the base material 51 cannot be peeled off when the base material 51 is peeled off from the cover 30 joined to the support body 40 as described below can be suppressed.

支持體40之厚度T1之範圍亦可由包括0.20 mm、0.50 mm、0.75 mm及1.0 mm之第1群組、及/或包括1.2 mm、1.5 mm、1.8 mm及2.0 mm之第2群組決定。支持體40之厚度T1之範圍之下限亦可由上述第1群組所含之值中之任意1個決定。例如，支持體40之厚度T1之範圍之下限亦可為0.20 mm以上，亦可為0.50 mm以上，亦可為0.75 mm以上，亦可為1.0 mm以上。又，支持體40之厚度T1之範圍之上限亦可由上述第2群組所含之值中之任意1個決定。例如，支持體40之厚度T1之範圍之上限亦可為1.2 mm以下，亦可為1.5 mm以下，亦可為1.8 mm以下，亦可為2.0 mm以下。支持體40之厚度T1之範圍亦可由上述第1群組所含之值中之任意1個與上述第2群組所含之值中之任意1個之組合決定，例如，亦可為0.20 mm以上2.0 mm以下，亦可為0.50 mm以上1.8 mm以下，亦可為0.75 mm以上1.5 mm以下，亦可為1.0 mm以上1.2 mm以下。又，支持體40之厚度T1之範圍亦可由上述第1群組所含之值中之任意2個之組合決定，例如，亦可為0.20 mm以上1.0 mm以下，亦可為0.20 mm以上0.75 mm以下，亦可為0.50 mm以上1.0 mm以下，亦可為0.50 mm以上0.75 mm以下。又，支持體40之厚度T1之範圍亦可由上述第2群組所含之值中之任意2個之組合決定，例如，亦可為1.2 mm以上2.0 mm以下，亦可為1.2 mm以上1.8 mm以下，亦可為1.5 mm以上2.0 mm以下，亦可為1.5 mm以上1.8 mm以下。The range of the thickness T1 of the support 40 may also be determined by the first group including 0.20 mm, 0.50 mm, 0.75 mm and 1.0 mm, and/or the second group including 1.2 mm, 1.5 mm, 1.8 mm and 2.0 mm. The lower limit of the range of the thickness T1 of the support body 40 may also be determined by any one of the values included in the first group described above. For example, the lower limit of the range of the thickness T1 of the support body 40 may be 0.20 mm or more, 0.50 mm or more, 0.75 mm or more, or 1.0 mm or more. In addition, the upper limit of the range of the thickness T1 of the support body 40 may be determined by any one of the values included in the above-mentioned second group. For example, the upper limit of the range of the thickness T1 of the support body 40 may be 1.2 mm or less, 1.5 mm or less, 1.8 mm or less, or 2.0 mm or less. The range of the thickness T1 of the support body 40 can also be determined by the combination of any one of the values included in the first group and any one of the values included in the second group, for example, it can also be 0.20 mm More than 2.0 mm or less, may be more than 0.50 mm and less than 1.8 mm, may be more than 0.75 mm and less than 1.5 mm, and may be more than 1.0 mm and less than 1.2 mm. In addition, the range of the thickness T1 of the support body 40 may be determined by the combination of any two of the values included in the first group, for example, may be 0.20 mm or more and 1.0 mm or less, or may be 0.20 mm or more and 0.75 mm Below, it may be 0.50 mm or more and 1.0 mm or less, or 0.50 mm or more and 0.75 mm or less. In addition, the range of the thickness T1 of the support body 40 can also be determined by the combination of any two values included in the above-mentioned second group, for example, it can also be 1.2 mm or more and 2.0 mm or less, or 1.2 mm or more and 1.8 mm. Below, it may be 1.5 mm or more and 2.0 mm or less, or 1.5 mm or more and 1.8 mm or less.

又，支持體40較佳為包含剛性率為50 GPa以上65 GPa以下之材料。於該情形時，剛性率G可以如下方式算出。即，如圖7A所示，於長方體形狀之彈性體E中，設為於在將下表面固定之狀態下對彈性體E施加與上表面平行之力時，側面傾斜。於該情形時，若將彈性體E之上表面之表面積設為S、將施加之力設為F、將側面之斜率設為ϕ，則剛性率G可利用以下之式(1)算出。 G＝F/(S・ϕ)  式(1) 藉由支持體40之材料之剛性率為50 GPa以上，可有效提昇蒸鍍罩20之剛性。藉此，可抑制罩30產生皺褶或變形。又，藉由支持體40之材料之剛性率為65 GPa以下，可抑制於如下所述般自與支持體40接合之罩30將基材51剝離時不能將基材51剝離之缺陷。Moreover, it is preferable that the support body 40 contains the material whose rigidity rate is 50 GPa or more and 65 GPa or less. In this case, the stiffness ratio G can be calculated as follows. That is, as shown in FIG. 7A , in the elastic body E having a rectangular parallelepiped shape, when a force parallel to the upper surface is applied to the elastic body E with the lower surface fixed, the side surfaces are inclined. In this case, if the surface area of the upper surface of the elastic body E is S, the applied force is F, and the slope of the side surface is ϕ, the rigidity G can be calculated by the following formula (1). G＝F/(S・ϕ) Equation (1) Since the rigidity of the material of the support body 40 is more than 50 GPa, the rigidity of the vapor deposition cover 20 can be effectively improved. Thereby, wrinkling and deformation of the cover 30 can be suppressed. Moreover, when the rigidity ratio of the material of the support body 40 is 65 GPa or less, the defect that the base material 51 cannot be peeled off when the base material 51 is peeled off from the cover 30 joined to the support body 40 as described below can be suppressed.

又，上述剛性率亦可藉由使用共振法測定固有振動數而求出。於該情形時，首先，利用構成支持體40之材料，製作寬度(W)10 mm×長度(L)60 mm×厚度(t)0.5 mm之試片。然後，將試片之長邊方向之一端部固定於試驗裝置(例如，Nihon Techno-Plus公司製造之EG-HT)，將長邊方向之另一端部設為自由端。繼而，於例如室溫為25℃之氣氛下，對該另一端部施加例如10 Hz以上200 Hz以下之扭轉振動。此時，使扭轉振動之振動數改變，而測定試片之振幅成為最大時之振動數(固有振動數(ω))。然後，可根據所獲得之振動數(固有振動數(ω))、試片之尺寸(寬度(W)、長度(L)、厚度(t))，利用以下之式(2)算出剛性率G。 G＝(K1・L・ω2 )/((1－K2・t/W)・W・t3 )  式(2) 此處，K1係裝置常數，K2係常數。In addition, the said rigidity rate can also be calculated|required by measuring the natural vibration number using a resonance method. In this case, first, a test piece of width (W) 10 mm x length (L) 60 mm x thickness (t) 0.5 mm was produced using the material constituting the support 40 . Then, one end in the longitudinal direction of the test piece is fixed to a test apparatus (eg, EG-HT manufactured by Nihon Techno-Plus Co., Ltd.), and the other end in the longitudinal direction is set as a free end. Next, for example, torsional vibration of 10 Hz or more and 200 Hz or less is applied to the other end in an atmosphere where the room temperature is 25°C. At this time, the vibration number of the torsional vibration was changed, and the vibration number (natural vibration number (ω)) when the amplitude of the test piece became the maximum was measured. Then, based on the obtained vibration number (natural vibration number (ω)) and the size of the test piece (width (W), length (L), thickness (t)), the stiffness ratio G can be calculated by the following formula (2) . G=(K1·L·ω 2 )/((1-K2·t/W)·W·t 3 ) Equation (2) Here, K1 is a device constant, and K2 is a constant.

支持體40之材料之剛性率之範圍亦可由包括50 GPa、52 GPa、54 GPa及56 GPa之第1群組、及/或包括58 GPa、60 GPa、62 GPa及65 GPa之第2群組決定。支持體40之材料之剛性率之範圍之下限亦可由上述第1群組所含之值中之任意1個決定。例如，支持體40之材料之剛性率之範圍之下限亦可為50 GPa以上，亦可為52 GPa以上，亦可為54 GPa以上，亦可為56 GPa以上。又，支持體40之材料之剛性率之範圍之上限亦可由上述第2群組所含之值中之任意1個決定。例如，支持體40之材料之剛性率之範圍之上限亦可為58 GPa以下，亦可為60 GPa以下，亦可為62 GPa以下，亦可為65 GPa以下。支持體40之材料之剛性率之範圍亦可由上述第1群組所含之值中之任意1個與上述第2群組所含之值中之任意1個之組合決定，例如，亦可為50 GPa以上65 GPa以下，亦可為52 GPa以上62 GPa以下，亦可為54 GPa以上60 GPa以下，亦可為56 GPa以上58 GPa以下。又，支持體40之材料之剛性率之範圍亦可由上述第1群組所含之值中之任意2個之組合決定，例如，亦可為50 GPa以上56 GPa以下，亦可為50 GPa以上54 GPa以下，亦可為52 GPa以上56 GPa以下，亦可為52 GPa以上54 GPa以下。又，支持體40之材料之剛性率之範圍亦可由上述第2群組所含之值中之任意2個之組合決定，例如，亦可為58 GPa以上65 GPa以下，亦可為58 GPa以上62 GPa以下，亦可為60 GPa以上65 GPa以下，亦可為60 GPa以上62 GPa以下。The range of the stiffness ratio of the material of the support 40 can also be set by the first group including 50 GPa, 52 GPa, 54 GPa and 56 GPa, and/or the second group including 58 GPa, 60 GPa, 62 GPa and 65 GPa Decide. The lower limit of the range of the rigidity ratio of the material of the support body 40 may be determined by any one of the values included in the above-mentioned first group. For example, the lower limit of the range of the rigidity ratio of the material of the support 40 may be 50 GPa or more, 52 GPa or more, 54 GPa or more, or 56 GPa or more. In addition, the upper limit of the range of the rigidity rate of the material of the support body 40 may be determined by any one of the values included in the above-mentioned second group. For example, the upper limit of the range of the rigidity ratio of the material of the support 40 may be 58 GPa or less, 60 GPa or less, 62 GPa or less, or 65 GPa or less. The range of the rigidity ratio of the material of the support body 40 may also be determined by the combination of any one of the values included in the first group and any one of the values included in the second group. For example, it may be 50 GPa or more but 65 GPa or less, 52 GPa or more and 62 GPa or less, 54 GPa or more and 60 GPa or less, or 56 GPa or more and 58 GPa or less. In addition, the range of the stiffness ratio of the material of the support body 40 may be determined by a combination of any two of the values included in the above-mentioned first group, for example, it may be 50 GPa or more and 56 GPa or less, or 50 GPa or more. 54 GPa or less, 52 GPa or more and 56 GPa or less, or 52 GPa or more and 54 GPa or less. In addition, the range of the stiffness ratio of the material of the support body 40 may be determined by a combination of any two of the values included in the above-mentioned second group, for example, it may be 58 GPa or more and 65 GPa or less, or 58 GPa or more. 62 GPa or less, 60 GPa or more and 65 GPa or less, or 60 GPa or more and 62 GPa or less.

作為構成上述支持體40之主要材料，可使用包含鎳之鐵合金。例如，可使用包含34質量%以上38質量%以下之鎳之鎳鋼材或除鎳以外進而包含鈷之超級鎳鋼材等鐵合金。又，並不限定於此，作為構成支持體40之主要材料，例如亦可使用包含鉻之鐵合金等上述包含鎳之鐵合金以外之鐵合金。作為包含鉻之鐵合金，例如可使用所謂之稱作不鏽鋼之鐵合金。又，亦可使用鎳或鎳-鈷合金等鐵合金以外之金屬或合金。As the main material constituting the above-mentioned support 40, an iron alloy containing nickel can be used. For example, iron alloys such as nickel steel materials containing 34 mass % or more and 38 mass % or less of nickel or super nickel steel materials containing cobalt in addition to nickel can be used. In addition, it is not limited to this, For example, as a main material which comprises the support body 40, iron alloys other than the above-mentioned iron alloy containing nickel, such as an iron alloy containing chromium, can also be used. As the iron alloy containing chromium, a so-called iron alloy called stainless steel can be used, for example. In addition, metals or alloys other than iron alloys such as nickel and nickel-cobalt alloys may also be used.

然，如上所述，蒸鍍處理可於蒸鍍裝置90之內部實施。此時，有如圖7B所示一面使坩堝94及加熱器96沿蒸鍍罩20之面方向移動一面進行蒸鍍處理之情形。於該情形時，伴隨坩堝94及加熱器96之移動，蒸鍍裝置90之內部所保持之蒸鍍罩20之罩30中之面向加熱器96之部分吸收自加熱器96供給之輻射熱而局部熱膨脹。因此會產生該部分與其他部分之尺寸變化之差異所致位置偏移，結果有可能導致附著於被蒸鍍基板92上之蒸鍍材料之尺寸精度或位置精度下降。Of course, as described above, the vapor deposition process may be performed inside the vapor deposition apparatus 90 . At this time, as shown in FIG. 7B , the vapor deposition process may be performed while moving the crucible 94 and the heater 96 in the surface direction of the vapor deposition cover 20 . In this case, along with the movement of the crucible 94 and the heater 96, the portion of the cover 30 of the evaporation cover 20 held in the evaporation apparatus 90 facing the heater 96 absorbs the radiant heat supplied from the heater 96 and locally thermally expands. . As a result, positional deviation due to the difference in dimensional variation between this part and other parts may occur, and as a result, the dimensional accuracy or positional accuracy of the vapor deposition material adhering to the substrate 92 to be vapor deposited may decrease.

尤其於使用使加熱器96於罩30之面方向中之與罩30之長邊方向正交之方向上移動之蒸鍍裝置90作為蒸鍍裝置90時，罩30中之面向加熱器96之部分變得薄而細長，因此與被蒸鍍基板92相比熱容量變小。因此，罩30之相鄰之第1貫通孔35間之部分熱膨脹，而罩30以於長邊方向上延伸之方式熱膨脹。In particular, when the vapor deposition apparatus 90 in which the heater 96 is moved in a direction perpendicular to the longitudinal direction of the cover 30 among the surface directions of the cover 30 is used as the vapor deposition apparatus 90, the portion of the cover 30 facing the heater 96 is used as the vapor deposition apparatus 90. Since it becomes thin and slender, the thermal capacity becomes smaller than that of the substrate to be vapor-deposited 92 . Therefore, the portion between the adjacent first through holes 35 of the cover 30 thermally expands, and the cover 30 thermally expands so as to extend in the longitudinal direction.

又，雖對蒸鍍罩20之罩30作用強度較強之磁場，但有藉由利用加熱器96進行加熱而熱膨脹之罩30相對於被蒸鍍基板92自蒸鍍材料98本應蒸鍍之部位移動熱膨脹之量之情形。於該情形時，存在蒸鍍材料98附著於本來不會蒸鍍之部分而使與罩30之第1貫通孔35之位置對應之圖案之邊緣模糊或該圖案之形狀擴大之問題。尤其是，該圖案越高清，則該問題越無法忽視，此亦成為限制圖案之高清化之一要因。In addition, although a strong magnetic field acts on the cover 30 of the vapor deposition cover 20, the cover 30 that is thermally expanded by heating with the heater 96 should be vapor-deposited from the vapor deposition material 98 relative to the substrate 92 to be vapor-deposited. The amount of thermal expansion of the moving parts. In this case, there is a problem that the vapor deposition material 98 adheres to the portion that is not originally vaporized, and the edge of the pattern corresponding to the position of the first through hole 35 of the cover 30 is blurred or the shape of the pattern is enlarged. In particular, the higher the definition of the pattern, the more this problem cannot be ignored, which is also one of the reasons for restricting the high-definition of the pattern.

相對於此，於本實施形態中，如上所述，支持體40之一個第2貫通孔45亦可與罩30之一個有效區域22對應。又，亦可於該第2貫通孔45之周圍設置支持區域46，該支持區域46亦可以支持罩30之周圍區域23之方式構成。進而，作為支持體40之材料，可使用剛性率為50 GPa以上且包含34質量%以上38質量%以下之鎳之鎳鋼材或除鎳以外進而包含鈷之超級鎳鋼材等鐵合金。藉此，由剛性率為50 GPa以上之材料構成之支持體40可以包圍罩30之有效區域22之方式支持罩30，因此可抑制罩30之局部熱膨脹。On the other hand, in the present embodiment, as described above, one second through hole 45 of the support body 40 may correspond to one effective area 22 of the cover 30 . In addition, a support region 46 may be provided around the second through hole 45 , and the support region 46 may be configured to support the surrounding region 23 of the cover 30 . Further, as the material of the support 40 , iron alloys such as nickel steel materials containing nickel at a stiffness of 50 GPa or more and 34 mass % or more and 38 mass % or less, or super nickel steel materials containing cobalt in addition to nickel can be used. As a result, the support body 40 made of a material having a rigidity of 50 GPa or more can support the cover 30 so as to surround the effective area 22 of the cover 30 , thereby suppressing local thermal expansion of the cover 30 .

其次，詳細地對框架15進行說明。如圖3所示，框架15亦可形成為俯視時大致矩形之框狀，於框架15亦可設置俯視時與支持體40之第2貫通孔45重疊之開口15a。於本發明中，俯視時劃定開口15a之輪廓亦可包圍劃定第2貫通孔45之輪廓之全部。於蒸鍍時，自坩堝94蒸發之蒸鍍材料98通過框架15之開口15a而到達至蒸鍍罩20。Next, the frame 15 will be described in detail. As shown in FIG. 3 , the frame 15 may be formed in a substantially rectangular frame shape in plan view, and the frame 15 may be provided with an opening 15 a overlapping the second through hole 45 of the support body 40 in plan view. In the present invention, the outline defining the opening 15 a may surround the entire outline defining the second through hole 45 in plan view. During evaporation, the evaporation material 98 evaporated from the crucible 94 reaches the evaporation cover 20 through the opening 15 a of the frame 15 .

又，框架15於面方向上亦可具有大於支持體40之尺寸，俯視時劃定框架15之輪廓亦可包圍劃定支持體40之輪廓。該框架15亦可使框架15之各邊與支持體40之各邊對應而安裝於支持體40。In addition, the frame 15 may also have a size larger than that of the support body 40 in the plane direction, and the outline defining the frame 15 may also surround the outline defining the support body 40 when viewed from above. The frame 15 can also be mounted on the support body 40 so that each side of the frame 15 corresponds to each side of the support body 40 .

此處，如圖3及圖4所示，上述罩30及支持體40亦可藉由複數個第1接合部19a相互接合。又，上述支持體40及框架15亦可藉由複數個第2接合部19b相互接合。第1接合部19a亦可沿罩30之外緣30e排列，第2接合部19b亦可沿支持體40之外緣40e排列。如上所述，罩30及支持體40亦可具有俯視時大致矩形狀之輪廓。因此，接合部19a、19b亦可分別沿外緣30e、40e以大致矩形狀圖案排列。於圖3所示之例中，接合部19a、19b分別距外緣30e、40e具有固定距離而呈一直線狀排列。即，於圖3所示之例中，接合部19a、19b分別沿與外緣30e、40e之延伸方向平行之方向排列。Here, as shown in FIGS. 3 and 4 , the cover 30 and the support body 40 may be joined to each other by a plurality of first joining portions 19a. In addition, the support body 40 and the frame 15 may be joined to each other by a plurality of second joining portions 19b. The first joint portions 19 a may also be arranged along the outer edge 30 e of the cover 30 , and the second joint portions 19 b may also be arranged along the outer edge 40 e of the support body 40 . As described above, the cover 30 and the support body 40 may also have a substantially rectangular outline in plan view. Therefore, the joint portions 19a and 19b may be arranged in a substantially rectangular pattern along the outer edges 30e and 40e, respectively. In the example shown in FIG. 3 , the joint portions 19a and 19b are arranged in a straight line with a fixed distance from the outer edges 30e and 40e, respectively. That is, in the example shown in FIG. 3, the junction parts 19a, 19b are arranged in a direction parallel to the extending direction of the outer edges 30e, 40e, respectively.

又，於圖示之例中，接合部19a、19b分別沿外緣30e、40e之延伸方向相互具有等間隔而排列。於本實施形態中，罩30及支持體40、以及支持體40及框架15亦可藉由點焊相互接合。再者，並不限定於此，罩30及支持體40、以及罩30及框架15亦可藉由例如接著劑等其他固定方法相互接合。In addition, in the example shown in the figure, the joint portions 19a and 19b are arranged at equal intervals along the extending direction of the outer edges 30e and 40e, respectively. In this embodiment, the cover 30 and the support body 40, and the support body 40 and the frame 15 may be joined to each other by spot welding. In addition, it is not limited to this, The cover 30 and the support body 40, and the cover 30 and the frame 15 may be mutually joined by other fixing methods, such as an adhesive agent.

其次，對製造蒸鍍罩裝置10之方法進行說明。首先，對製造蒸鍍罩裝置10之蒸鍍罩20之方法進行說明。Next, the method of manufacturing the vapor deposition cover apparatus 10 is demonstrated. First, the method of manufacturing the vapor deposition cover 20 of the vapor deposition cover apparatus 10 is demonstrated.

首先，準備與基材51(參照圖8A)接合且具有形成有第1貫通孔35之鍍覆層31之罩30。此時，首先，準備基材51。只要具有絕緣性及適當強度，則構成基材51之材料或基材51之厚度並無特別限定。於如下所述般將罩30與支持體40、或者支持體40與框架15藉由經由基材51之雷射光之照射而熔接固定之情形時，可較佳地使用具有較高之透光性之玻璃材料作為構成基材51之材料。又，於將罩30與支持體40、或者支持體40與框架15使用接著劑相互固定之情形時，可使用玻璃、合成樹脂、金屬等作為構成基材51之材料。於該情形時，基材51亦可不具有透光性。此處，對使用玻璃材料作為基材51之例進行說明。First, the cover 30 which is bonded to the base material 51 (see FIG. 8A ) and has the plating layer 31 in which the first through holes 35 are formed is prepared. At this time, first, the base material 51 is prepared. The material constituting the base material 51 or the thickness of the base material 51 is not particularly limited as long as it has insulating properties and appropriate strength. When the cover 30 and the support body 40, or the support body 40 and the frame 15 are welded and fixed by the irradiation of the laser light through the base material 51 as described below, it can be preferably used with high light transmittance. The glass material is used as the material constituting the base material 51 . When the cover 30 and the support 40 or the support 40 and the frame 15 are fixed to each other with an adhesive, glass, synthetic resin, metal, etc. can be used as the material constituting the base material 51 . In this case, the base material 51 may not have light transmittance. Here, an example in which a glass material is used as the base material 51 will be described.

其次，如圖8A所示，於基材51上形成由導電性材料構成之導電性材料層52a。導電性材料層52a係藉由圖案化而成為導電層52之層。作為構成導電性材料層52a之材料，適當使用金屬材料或氧化物導電性材料等具有導電性之材料。作為金屬材料之例，例如可列舉鉻或銅等。較佳為將對下述第1抗蝕圖案53具有較高之密接性之材料用作構成導電性材料層52a之材料。例如於藉由使包含丙烯酸系光硬化性樹脂之抗蝕膜等所謂之稱作乾膜者圖案化而製作第1抗蝕圖案53之情形時，較佳為使用銅作為構成導電性材料層52a之材料。Next, as shown in FIG. 8A , a conductive material layer 52 a made of a conductive material is formed on the base material 51 . The conductive material layer 52a is a layer of the conductive layer 52 by patterning. As a material constituting the conductive material layer 52a, a conductive material such as a metal material or an oxide conductive material is suitably used. As an example of a metal material, chromium, copper, etc. are mentioned, for example. It is preferable to use the material which has high adhesiveness with respect to the following 1st resist pattern 53 as the material which comprises the electroconductive material layer 52a. For example, when the first resist pattern 53 is produced by patterning a so-called dry film, such as a resist film containing an acrylic photocurable resin, it is preferable to use copper as the conductive material layer 52a. material.

導電性材料層52a藉由例如濺鍍或無電解鍍覆等而形成。若欲使導電性材料層52a較厚地形成，則導電性材料層52a之形成需要長時間。另一方面，若導電性材料層52a之厚度過薄，則電阻值變大，而不易藉由電解鍍覆處理形成第1金屬層32。因此，例如導電性材料層52a之厚度較佳為0.050 μm以上3.0 μm以下之範圍內。The conductive material layer 52a is formed by, for example, sputtering, electroless plating, or the like. If the conductive material layer 52a is to be formed thick, it takes a long time to form the conductive material layer 52a. On the other hand, when the thickness of the conductive material layer 52a is too thin, the resistance value increases, and it becomes difficult to form the first metal layer 32 by electrolytic plating. Therefore, for example, the thickness of the conductive material layer 52a is preferably in the range of 0.050 μm or more and 3.0 μm or less.

導電性材料層52a之厚度之範圍亦可由包括0.050 μm、0.075 μm、0.10 μm及0.50 μm之第1群組、及/或包1.0 μm、1.5 μm、2.0 μm及3.0 μm括之第2群組決定。導電性材料層52a之厚度之範圍之下限亦可由上述第1群組所含之值中之任意1個決定。例如，導電性材料層52a之厚度之範圍之下限亦可為0.050 μm以上，亦可為0.075 μm以上，亦可為0.10 μm以上，亦可為0.50 μm以上。又，導電性材料層52a之厚度之範圍之上限亦可由上述第2群組所含之值中之任意1個決定。例如，導電性材料層52a之厚度之範圍之上限亦可為1.0 μm以下，亦可為1.5 μm以下，亦可為2.0 μm以下，亦可為3.0 μm以下。導電性材料層52a之厚度之範圍亦可由上述第1群組所含之值中之任意1個與上述第2群組所含之值中之任意1個之組合決定，例如，亦可為0.050 μm以上3.0 μm以下，亦可為0.075 μm以上2.0 μm以下，亦可為0.10 μm以上1.5 μm以下，亦可為0.50 μm以上1.0 μm以下。又，導電性材料層52a之厚度之範圍亦可由上述第1群組所含之值中之任意2個之組合決定，例如，亦可為0.050 μm以上0.50 μm以下，亦可為0.050 μm以上0.10 μm以下，亦可為0.075 μm以上0.50 μm以下，亦可為0.075 μm以上0.10 μm以下。又，導電性材料層52a之厚度之範圍亦可由上述第2群組所含之值中之任意2個之組合決定，例如，亦可為1.0 μm以上3.0 μm以下，亦可為1.0 μm以上2.0 μm以下，亦可為1.5 μm以上3.0 μm以下，亦可為1.5 μm以上2.0 μm以下。The thickness of the conductive material layer 52a can also range from the first group including 0.050 μm, 0.075 μm, 0.10 μm and 0.50 μm, and/or the second group including 1.0 μm, 1.5 μm, 2.0 μm and 3.0 μm Decide. The lower limit of the range of the thickness of the conductive material layer 52a may also be determined by any one of the values included in the above-mentioned first group. For example, the lower limit of the thickness of the conductive material layer 52a may be 0.050 μm or more, 0.075 μm or more, 0.10 μm or more, or 0.50 μm or more. In addition, the upper limit of the range of the thickness of the conductive material layer 52a may be determined by any one of the values included in the above-mentioned second group. For example, the upper limit of the range of the thickness of the conductive material layer 52a may be 1.0 μm or less, 1.5 μm or less, 2.0 μm or less, or 3.0 μm or less. The range of the thickness of the conductive material layer 52a can also be determined by the combination of any one of the values included in the first group and any one of the values included in the second group, for example, it can also be 0.050 μm or more and 3.0 μm or less, may be 0.075 μm or more and 2.0 μm or less, may be 0.10 μm or more and 1.5 μm or less, and may be 0.50 μm or more and 1.0 μm or less. In addition, the range of the thickness of the conductive material layer 52a may be determined by a combination of any two values included in the first group, for example, may be 0.050 μm or more and 0.50 μm or less, or may be 0.050 μm or more and 0.10 μm or less, 0.075 μm or more and 0.50 μm or less, or 0.075 μm or more and 0.10 μm or less. In addition, the range of the thickness of the conductive material layer 52a may be determined by a combination of any two values included in the second group, for example, may be 1.0 μm or more and 3.0 μm or less, or 1.0 μm or more and 2.0 μm or more. μm or less, 1.5 μm or more and 3.0 μm or less, or 1.5 μm or more and 2.0 μm or less.

其次，如圖8B所示，於導電性材料層52a上形成具有特定圖案之第1抗蝕圖案53。作為形成第1抗蝕圖案53之方法，與下述第2抗蝕圖案55之情形同樣地，可採用光微影法等。作為對第1抗蝕圖案53用之材料以特定圖案照射光之方法，可採用使用使曝光光以特定圖案透過之曝光罩之方法或使曝光光以特定圖案相對於第1抗蝕圖案53用之材料相對性地進行掃描之方法等。然後，如圖8C所示，將導電性材料層52a中之未由第1抗蝕圖案53覆蓋之部分藉由蝕刻去除。然後，如圖8D所示，將第1抗蝕圖案53去除。藉此，可獲得形成有具有與第1金屬層32對應之圖案之導電層52之圖案基板50。Next, as shown in FIG. 8B, a first resist pattern 53 having a specific pattern is formed on the conductive material layer 52a. As a method of forming the first resist pattern 53, as in the case of the second resist pattern 55 described below, a photolithography method or the like can be used. As a method of irradiating the material for the first resist pattern 53 with light in a specific pattern, a method using an exposure mask that transmits the exposure light in a specific pattern, or a method of exposing the exposure light to the first resist pattern 53 in a specific pattern can be used. The method of scanning the material relatively. Then, as shown in FIG. 8C , the portion of the conductive material layer 52a that is not covered by the first resist pattern 53 is removed by etching. Then, as shown in FIG. 8D , the first resist pattern 53 is removed. Thereby, the patterned substrate 50 in which the conductive layer 52 having the pattern corresponding to the first metal layer 32 is formed can be obtained.

其次，利用形成有導電層52之基材51(圖案基板50)，於導電層52上析出鍍覆層31。Next, the plating layer 31 is deposited on the conductive layer 52 using the base material 51 (the pattern substrate 50 ) on which the conductive layer 52 is formed.

其次，對利用圖案基板50製作上述第1金屬層32之第1成膜步驟進行說明。此處，於具有絕緣性之基材51上形成以特定圖案設置有第1開口部30c之第1金屬層32。具體而言，對形成有導電層52之基材51上供給第1鍍覆液，而實施於導電層52上析出第1金屬層32之第1鍍覆處理步驟。例如，將形成有導電層52之基材51浸於填充有第1鍍覆液之鍍覆槽中。藉此，如圖9A所示，可於基材51上獲得以特定圖案設置有第1開口部30c之第1金屬層32。再者，第1金屬層32之厚度亦可成為例如5.0 μm以下。又，於基材51上形成第1金屬層32並不限定於在基材51上直接形成第1金屬層32，亦包含於基材51上介隔以導電層52等其他層而形成第1金屬層32。Next, the first film-forming step of forming the first metal layer 32 using the pattern substrate 50 will be described. Here, the first metal layer 32 in which the first openings 30c are provided in a specific pattern is formed on the insulating base material 51 . Specifically, the first plating solution is supplied to the base material 51 on which the conductive layer 52 is formed, and the first plating treatment step of depositing the first metal layer 32 on the conductive layer 52 is performed. For example, the base material 51 on which the conductive layer 52 is formed is immersed in a plating tank filled with the first plating solution. Thereby, as shown in FIG. 9A , the first metal layer 32 in which the first openings 30 c are provided in a specific pattern can be obtained on the base material 51 . In addition, the thickness of the first metal layer 32 may be, for example, 5.0 μm or less. In addition, the formation of the first metal layer 32 on the substrate 51 is not limited to directly forming the first metal layer 32 on the substrate 51, but also includes forming the first metal layer 32 on the substrate 51 through other layers such as the conductive layer 52. Metal layer 32 .

再者，於鍍覆處理之特性上，如圖9A所示，第1金屬層32不僅可形成於於沿基材51之法線方向觀察之情形時與導電層52重疊之部分，亦可形成於不與導電層52重疊之部分。其原因在於：於與導電層52之端部54重疊之部分析出之第1金屬層32之表面上，進而析出第1金屬層32。結果，如圖9A所示，第1開口部30c之端部33可位於在沿基材51之法線方向觀察之情形時不與導電層52重疊之部分。Furthermore, in terms of the characteristics of the plating process, as shown in FIG. 9A , the first metal layer 32 can be formed not only on the portion overlapping the conductive layer 52 when viewed along the normal direction of the substrate 51 , but also can be formed. at the portion not overlapping with the conductive layer 52 . The reason for this is that the first metal layer 32 is further precipitated on the surface of the first metal layer 32 formed at the portion overlapping with the end portion 54 of the conductive layer 52 . As a result, as shown in FIG. 9A , the end 33 of the first opening 30 c can be located at a portion that does not overlap with the conductive layer 52 when viewed along the normal direction of the substrate 51 .

只要可於導電層52上析出第1金屬層32，則第1鍍覆處理步驟之具體方法並無特別限定。例如第1鍍覆處理步驟亦可以藉由於導電層52中流通電流而於導電層52上析出第1金屬層32的所謂電解鍍覆處理步驟之形式實施。或者，第1鍍覆處理步驟亦可為無電解鍍覆處理步驟。再者，於第1鍍覆處理步驟為無電解鍍覆處理步驟之情形時，亦可於導電層52上設置適當之觸媒層。或者，導電層52亦可以作為觸媒層發揮功能之方式構成。於實施電解鍍覆處理步驟之情形時，亦可於導電層52上設置觸媒層。The specific method of the first plating treatment step is not particularly limited as long as the first metal layer 32 can be deposited on the conductive layer 52 . For example, the first plating treatment step may be implemented as a so-called electrolytic plating treatment step in which the first metal layer 32 is deposited on the conductive layer 52 due to the current flowing through the conductive layer 52 . Alternatively, the first plating treatment step may be an electroless plating treatment step. Furthermore, when the first plating treatment step is an electroless plating treatment step, an appropriate catalyst layer may also be provided on the conductive layer 52 . Alternatively, the conductive layer 52 may be configured to function as a catalyst layer. In the case of performing the electrolytic plating process, a catalyst layer may also be provided on the conductive layer 52 .

所使用之第1鍍覆液之成分根據對第1金屬層32要求之特性而適當決定。例如，作為第1鍍覆液，可使用包含鎳化合物之溶液與包含鐵化合物之溶液之混合溶液。例如，可使用包含胺基磺酸鎳或溴化鎳之溶液與包含胺基磺酸亞鐵之溶液之混合溶液。鍍覆液中亦可包含各種添加劑。作為添加劑，可使用硼酸等pH緩衝劑、糖精鈉等一次光澤劑、丁炔二醇、丙炔醇、香豆素、福馬林、硫脲等二次光澤劑或抗氧化劑等。The composition of the first plating solution to be used is appropriately determined according to the properties required for the first metal layer 32 . For example, as the first plating solution, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. Various additives may be contained in the plating solution. As additives, pH buffering agents such as boric acid, primary glossing agents such as sodium saccharin, secondary glossing agents such as butynediol, propynyl alcohol, coumarin, formalin, and thiourea, and antioxidants can be used.

然後，實施於第1金屬層32上形成設置有與第1開口部30c連通之第2開口部30d之第2金屬層37的第2成膜步驟。此時，首先，於基材51上及第1金屬層32上，隔開特定間隙56而形成第2抗蝕圖案55。圖9B係表示形成於基材51上之第2抗蝕圖案55之剖視圖。如圖9B所示，抗蝕層形成步驟係以第1金屬層32之第1開口部30c由第2抗蝕圖案55覆蓋並且第2抗蝕圖案55之間隙56位於第1金屬層32上之方式實施。Then, the second film-forming step of forming the second metal layer 37 provided with the second opening 30d communicating with the first opening 30c on the first metal layer 32 is performed. At this time, first, the second resist pattern 55 is formed on the base material 51 and the first metal layer 32 with a predetermined gap 56 therebetween. FIG. 9B is a cross-sectional view showing the second resist pattern 55 formed on the base material 51 . As shown in FIG. 9B , in the resist layer forming step, the first opening 30 c of the first metal layer 32 is covered by the second resist pattern 55 and the gap 56 of the second resist pattern 55 is located on the first metal layer 32 way to implement.

以下，對抗蝕層形成步驟之一例進行說明。首先，藉由於基材51上及第1金屬層32上貼附乾膜而形成負型之抗蝕膜。作為乾膜之例，例如可列舉日立化成製造之RY3310等包含丙烯酸系光硬化性樹脂者。又，亦可藉由將第2抗蝕圖案55用之材料塗佈於基材51上並於其後視需要實施燒成而形成抗蝕膜。然後，準備不使光透過抗蝕膜中之應成為間隙56之區域之曝光罩，並將曝光罩配置於抗蝕膜上。然後，藉由真空密接使曝光罩充分密接於抗蝕膜。再者，作為抗蝕膜，亦可使用正型者。於該情形時，使用使光透過抗蝕膜中之欲去除之區域之曝光罩作為曝光罩。Hereinafter, an example of a resist layer formation process is demonstrated. First, a negative resist film is formed by sticking a dry film on the base material 51 and the first metal layer 32 . As an example of a dry film, the thing containing acrylic photocurable resin, such as RY3310 by Hitachi Chemical Co., Ltd., is mentioned, for example. Moreover, a resist film can also be formed by apply|coating the material for the 2nd resist pattern 55 on the base material 51, and performing baking as needed after that. Then, an exposure mask which does not allow light to pass through the region to be the gap 56 in the resist film is prepared, and the exposure mask is arranged on the resist film. Then, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. In addition, a positive type can also be used as a resist film. In this case, an exposure mask that transmits light to an area to be removed in the resist film is used as an exposure mask.

然後，隔著曝光罩對抗蝕膜進行曝光。進而，使抗蝕膜顯影以於經曝光之抗蝕膜上形成像。再者，為了使第2抗蝕圖案55更牢固地密接於基材51及第1金屬層32，亦可於顯影步驟之後實施對第2抗蝕圖案55進行加熱之熱處理步驟。Then, the resist film is exposed through an exposure mask. Further, the resist film is developed to form an image on the exposed resist film. Furthermore, in order to make the second resist pattern 55 adhere more firmly to the base material 51 and the first metal layer 32, a heat treatment step of heating the second resist pattern 55 may be performed after the development step.

然後，於第1金屬層32上形成第2金屬層37。此時，於第1金屬層32上形成設置有與第1開口部30c連通之第2開口部30d之第2金屬層37。具體而言，對第2抗蝕圖案55之間隙56供給第2鍍覆液，而於第1金屬層32上析出第2金屬層37。例如，將形成有第1金屬層32之基材51浸於填充有第2鍍覆液之鍍覆槽。藉此，如圖9C所示，可於第1金屬層32上獲得第2金屬層37。再者，第2金屬層37之厚度亦可以有效區域22中之蒸鍍罩20之鍍覆層31之厚度T0(參照圖6)成為2.0 μm以上50 μm以下之方式進行設定。Then, the second metal layer 37 is formed on the first metal layer 32 . At this time, on the first metal layer 32, the second metal layer 37 provided with the second opening 30d communicating with the first opening 30c is formed. Specifically, the second plating solution is supplied to the gaps 56 of the second resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32 . For example, the base material 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with the second plating solution. Thereby, as shown in FIG. 9C , the second metal layer 37 can be obtained on the first metal layer 32 . Furthermore, the thickness of the second metal layer 37 may be set so that the thickness T0 (see FIG. 6 ) of the plating layer 31 of the vapor deposition cap 20 in the effective region 22 is 2.0 μm or more and 50 μm or less.

只要可於第1金屬層32上析出第2金屬層37，則第2鍍覆處理步驟之具體方法並無特別限定。例如，第2鍍覆處理步驟亦可以藉由於第1金屬層32中流通電流而於第1金屬層32上析出第2金屬層37的所謂電解鍍覆處理步驟之形式實施。或者，第2鍍覆處理步驟亦可為無電解鍍覆處理步驟。再者，於第2鍍覆處理步驟為無電解鍍覆處理步驟之情形時，亦可於第1金屬層32上設置適當之觸媒層。於實施電解鍍覆處理步驟之情形時，亦可於第1金屬層32上設置觸媒層。As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating treatment step is not particularly limited. For example, the second plating treatment step can also be implemented as a so-called electrolytic plating treatment step in which the second metal layer 37 is deposited on the first metal layer 32 by passing a current through the first metal layer 32 . Alternatively, the second plating treatment step may be an electroless plating treatment step. Furthermore, when the second plating treatment step is an electroless plating treatment step, an appropriate catalyst layer may also be provided on the first metal layer 32 . In the case of performing the electrolytic plating treatment step, a catalyst layer may also be provided on the first metal layer 32 .

作為第2鍍覆液，亦可使用與上述第1鍍覆液相同之鍍覆液。或者，亦可將與第1鍍覆液不同之鍍覆液用作第2鍍覆液。於第1鍍覆液之組成與第2鍍覆液之組成相同之情形時，構成第1金屬層32之金屬之組成與構成第2金屬層37之金屬之組成亦相同。As the second plating solution, the same plating solution as the above-mentioned first plating solution can also be used. Alternatively, a plating liquid different from the first plating liquid may be used as the second plating liquid. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal constituting the first metal layer 32 and the composition of the metal constituting the second metal layer 37 are also the same.

再者，於圖9C中，示出繼續第2鍍覆處理步驟直至第2抗蝕圖案55之上表面與第2金屬層37之上表面一致之例，但並不限定於此。亦可於第2金屬層37之上表面位於較第2抗蝕圖案55之上表面更靠下方之狀態下停止第2鍍覆處理步驟。Furthermore, in FIG. 9C , an example is shown in which the second plating process is continued until the upper surface of the second resist pattern 55 is the same as the upper surface of the second metal layer 37 , but it is not limited to this. The second plating treatment step may also be stopped in a state where the upper surface of the second metal layer 37 is positioned lower than the upper surface of the second resist pattern 55 .

然後，實施將第2抗蝕圖案55去除之去除步驟。去除步驟係藉由將圖案基板50、第1金屬層32、第2金屬層37及第2抗蝕圖案55之積層體浸漬於例如鹼系之剝離液而進行。藉此，如圖9D所示，可使第2抗蝕圖案55自圖案基板50、第1金屬層32及第2金屬層37剝離。以此方式獲得與基材51接合之罩30。又，此時，可於第1金屬層32上獲得以特定圖案設置有第2開口部30d之第2金屬層37。進而，藉由第1開口部30c與第2開口部30d相互連通，而形成貫通罩30之第1貫通孔35。以此方式，於導電層52上析出鍍覆層31，藉此形成複數個第1貫通孔35。Then, a removal step of removing the second resist pattern 55 is performed. The removal step is performed by immersing the laminate of the pattern substrate 50 , the first metal layer 32 , the second metal layer 37 , and the second resist pattern 55 in, for example, an alkali-based stripping solution. Thereby, as shown in FIG. 9D , the second resist pattern 55 can be peeled off from the pattern substrate 50 , the first metal layer 32 , and the second metal layer 37 . In this way, the cover 30 joined to the base material 51 is obtained. In addition, in this case, the second metal layer 37 in which the second openings 30d are provided in a specific pattern can be obtained on the first metal layer 32 . Furthermore, the 1st opening part 30c and the 2nd opening part 30d are mutually connected, and the 1st through-hole 35 which penetrates the cover 30 is formed. In this way, the plating layer 31 is deposited on the conductive layer 52 , thereby forming a plurality of first through holes 35 .

又，與準備與基材51接合之蒸鍍罩20同時地，準備形成有第2貫通孔45之支持體40。此時，首先，於金屬板64之第1面64a上及第2面64b上形成包含感光性抗蝕材料之抗蝕膜。繼而，使抗蝕膜曝光及顯影。藉此，如圖10A所示，可於金屬板64之第1面64a上形成第1抗蝕圖案65a並於金屬板64之第2面64b上形成第2抗蝕圖案65b。In addition, at the same time as the preparation of the vapor deposition cover 20 to be joined to the base material 51, the support body 40 having the second through holes 45 formed thereon is prepared. At this time, first, a resist film containing a photosensitive resist material is formed on the first surface 64a and the second surface 64b of the metal plate 64 . Next, the resist film is exposed to light and developed. Thereby, as shown in FIG. 10A , the first resist pattern 65a can be formed on the first surface 64a of the metal plate 64 and the second resist pattern 65b can be formed on the second surface 64b of the metal plate 64 .

然後，如圖10B所示，實施使用第1蝕刻液對金屬板64之第1面64a中之未由第1抗蝕圖案65a覆蓋之區域進行蝕刻的第1面蝕刻步驟。藉此，於金屬板64之第1面64a形成大量第1凹部401。作為第1蝕刻液，例如使用包含氯化鐵溶液及鹽酸者。Then, as shown in FIG. 10B , the first surface etching step of etching the region not covered by the first resist pattern 65a in the first surface 64a of the metal plate 64 using the first etching solution is performed. Thereby, a large number of first recesses 401 are formed on the first surface 64 a of the metal plate 64 . As the first etching solution, for example, a ferric chloride solution and hydrochloric acid are used.

然後，如圖10C所示，實施對金屬板64之第2面64b中之未由第2抗蝕圖案65b覆蓋之區域進行蝕刻而於第2面64b形成第2凹部402的第2面蝕刻步驟。實施第2面蝕刻步驟直至藉由第1凹部401與第2凹部402互通而形成第2貫通孔45。作為第2蝕刻液，與上述第1蝕刻液同樣地，使用例如包含氯化鐵溶液及鹽酸者。再者，於第2面蝕刻步驟時，亦可如圖10C所示利用對第2蝕刻液具有耐性之樹脂69被覆第1凹部401。Then, as shown in FIG. 10C , a second surface etching step of etching the region not covered by the second resist pattern 65b in the second surface 64b of the metal plate 64 to form the second recess 402 on the second surface 64b is performed. . The second surface etching step is performed until the second through hole 45 is formed by the communication between the first recess 401 and the second recess 402 . As the second etching solution, as with the above-described first etching solution, for example, a ferric chloride solution and hydrochloric acid are used. Furthermore, in the etching step of the second surface, as shown in FIG. 10C , the first concave portion 401 may be covered with a resin 69 having resistance to the second etching solution.

然後，如圖10D所示，自金屬板64將樹脂69去除。樹脂69可藉由使用例如鹼系剝離液而去除。於使用鹼系剝離液之情形時，如圖10D所示，與樹脂69同時地亦將抗蝕圖案65a、65b去除。再者，將樹脂69去除後，亦可使用與用以使樹脂69剝離之剝離液不同剝離液，與樹脂69分開地將抗蝕圖案65a、65b去除。藉此，可獲得形成有第2貫通孔45之支持體40。Then, as shown in FIG. 10D , the resin 69 is removed from the metal plate 64 . The resin 69 can be removed by using, for example, an alkali-based stripping solution. In the case of using an alkali-based stripping liquid, as shown in FIG. 10D , the resist patterns 65 a and 65 b are also removed simultaneously with the resin 69 . In addition, after removing the resin 69, the resist pattern 65a, 65b may be removed separately from the resin 69 using a peeling liquid different from the peeling liquid for peeling the resin 69. Thereby, the support body 40 in which the 2nd through-hole 45 was formed can be obtained.

此種支持體40之厚度T1(參照圖4)可設為0.20 mm以上2.0 mm以下。藉由支持體40之厚度T1為0.20 mm以上，可提昇蒸鍍罩20之剛性。藉此，可抑制罩30產生皺褶或變形。又，藉由支持體40之厚度T1為2.0 mm以下，可抑制於如下所述般自與支持體40接合之罩30將基材51剝離時不能將基材51剝離之缺陷。The thickness T1 (refer to FIG. 4 ) of such a support 40 can be set to 0.20 mm or more and 2.0 mm or less. By setting the thickness T1 of the support body 40 to be 0.20 mm or more, the rigidity of the vapor deposition cover 20 can be improved. Thereby, wrinkling and deformation of the cover 30 can be suppressed. Moreover, when the thickness T1 of the support body 40 is 2.0 mm or less, the defect that the base material 51 cannot be peeled off when the base material 51 is peeled off from the cover 30 joined to the support body 40 as described below can be suppressed.

又，支持體40較佳為包含剛性率為50 GPa以上65 GPa以下之材料。藉由支持體40之材料之剛性率為50 GPa以上，可有效提昇蒸鍍罩20之剛性。藉此，可抑制罩30產生皺褶或變形。又，藉由支持體40之材料之剛性率為65 GPa以下，可抑制於自與支持體40接合之罩30將基材51剝離時不能將基材51剝離之缺陷。作為構成此種支持體40之材料，例如可使用包含34質量%以上38質量%以下之鎳之鎳鋼材或除鎳以外進而包含鈷之超級鎳鋼材等鐵合金。Moreover, it is preferable that the support body 40 contains the material whose rigidity rate is 50 GPa or more and 65 GPa or less. Since the rigidity of the material of the support body 40 is more than 50 GPa, the rigidity of the vapor deposition cover 20 can be effectively improved. Thereby, wrinkling and deformation of the cover 30 can be suppressed. Moreover, since the rigidity rate of the material of the support body 40 is 65 GPa or less, the defect that the base material 51 cannot be peeled off when the base material 51 is peeled off from the cover 30 joined to the support body 40 can be suppressed. As a material constituting such a support 40 , for example, iron alloys such as nickel steel materials containing 34 mass % or more and 38 mass % or less of nickel or super nickel steel materials containing cobalt in addition to nickel can be used.

然後，實施將罩30與支持體40接合之接合步驟。於該接合步驟中，以俯視時支持體40之第2貫通孔45與罩30之第1貫通孔35重疊之方式，將支持體40與罩30接合。此時，首先，如圖11A所示，將罩30配置於支持體40上。然後，自基材51側經由基材51對罩30照射雷射光La，而使第2金屬層37之一部分及支持體40之一部分因藉由雷射光La之照射產生之熱而融解，從而將罩30與支持體40藉由熔接相互接合。作為雷射光La，例如可使用由YAG雷射裝置產生之YAG雷射光。作為YAG雷射裝置，例如可使用具備於YAG(釔-鋁-石榴石)中添加有Nd(釹)之結晶作為振盪用介質者。Then, the joining step of joining the cover 30 and the support body 40 is performed. In this joining step, the support body 40 and the cover 30 are joined so that the second through holes 45 of the support body 40 and the first through holes 35 of the cover 30 overlap with each other in plan view. At this time, first, as shown in FIG. 11A , the cover 30 is placed on the support body 40 . Then, the cover 30 is irradiated with laser light La from the side of the base material 51 through the base material 51, so that a part of the second metal layer 37 and a part of the support 40 are melted by the heat generated by the irradiation of the laser light La, so that the The cover 30 and the support body 40 are joined to each other by welding. As the laser light La, for example, a YAG laser light generated by a YAG laser device can be used. As the YAG laser device, for example, a crystal obtained by adding Nd (neodymium) to YAG (yttrium-aluminum-garnet) can be used as an oscillation medium.

藉此，如圖11B所示，形成將罩30與支持體40接合之第1接合部19a，而獲得具有與基材51接合之罩30、及與罩30接合之支持體40之第1中間構件70a。再者，並不限定於此，罩30與支持體40亦可藉由例如接著劑等其他固定方法相互接合，或者，罩30與支持體40亦可藉由鍍覆處理相互接合。Thereby, as shown in FIG. 11B , the first joint portion 19 a for joining the cover 30 and the support body 40 is formed, and a first intermediate portion having the cover 30 joined to the base material 51 and the support body 40 joined to the cover 30 is obtained. member 70a. Furthermore, not limited to this, the cover 30 and the support 40 may be bonded to each other by other fixing methods such as adhesive, or the cover 30 and the support 40 may be bonded to each other by plating.

然後，實施自第1中間構件70a之罩30將基材51剝離之剝離步驟。藉此，如圖11C所示，可獲得蒸鍍罩20，其具備：罩30，其具有形成有複數個第1貫通孔35之鍍覆層31；及支持體40，其與罩30接合，形成有俯視時與複數個第1貫通孔35重疊之第2貫通孔45。此時，如上所述，支持於體40之厚度T1亦可成為2.0 mm以下。藉此，可抑制於自第1中間構件70a之罩30將基材51剝離時不能將基材51剝離之缺陷。即，於自罩30將基材51剝離時，一面以罩30不會產生皺褶或塑性變形之方式使支持體40彈性變形一面將基材51剝離。另一方面，於支持體40之厚度T1過大之情形時，支持體40之剛性變得過大，由此有可能難以使支持體40彈性變形。相對於此，藉由將支持體40之厚度T1設為2.0 mm以下，可抑制支持體40之剛性變得過大，而可使支持體40彈性變形。因此可抑制於自第1中間構件70a之罩30將基材51剝離時不能將基材51剝離之缺陷。Then, the peeling process of peeling the base material 51 from the cover 30 of the 1st intermediate member 70a is implemented. As a result, as shown in FIG. 11C , a vapor deposition cover 20 can be obtained, which includes a cover 30 having a plating layer 31 having a plurality of first through holes 35 formed thereon, and a support 40 joined to the cover 30 , The second through-holes 45 overlapping the plurality of first through-holes 35 in plan view are formed. At this time, as described above, the thickness T1 of the supporting body 40 may be 2.0 mm or less. Thereby, when peeling the base material 51 from the cover 30 of the 1st intermediate member 70a, the defect that the base material 51 cannot be peeled off can be suppressed. That is, when the base material 51 is peeled off from the cover 30, the base material 51 is peeled off while the support body 40 is elastically deformed so that the cover 30 does not wrinkle or plastically deform. On the other hand, when the thickness T1 of the support body 40 is too large, the rigidity of the support body 40 becomes too large, and it may be difficult to elastically deform the support body 40 . On the other hand, by setting the thickness T1 of the support body 40 to be 2.0 mm or less, the rigidity of the support body 40 can be suppressed from becoming too large, and the support body 40 can be elastically deformed. Therefore, the defect that the base material 51 cannot be peeled off when the base material 51 is peeled off from the cover 30 of the first intermediate member 70a can be suppressed.

其次，對製造蒸鍍罩裝置10之方法進行說明。Next, the method of manufacturing the vapor deposition cover apparatus 10 is demonstrated.

首先，藉由例如圖8A至圖11C所示之方法，製作蒸鍍罩20。First, the vapor deposition cover 20 is fabricated by, for example, the method shown in FIGS. 8A to 11C .

然後，將蒸鍍罩20與框架15接合。於該情形時，以俯視時框架15之開口15a與支持體40之第2貫通孔45重疊之方式，將框架15與支持體40接合。此時，如圖12A所示，以支持體40與框架15接觸之方式，將蒸鍍罩20配置於框架15上。然後，如圖12B所示，對支持體40照射雷射光La，而使支持體40之一部分及框架15之一部分因藉由雷射光La之照射產生之熱而融解，從而將支持體40與框架15藉由熔接相互接合。此時，亦可於將蒸鍍罩20於其面方向上拉伸之狀態下，將支持體40與框架15相互接合，以抑制蒸鍍罩20產生撓曲並且進行罩30之有效區域22之位置調整。Then, the vapor deposition cover 20 is joined to the frame 15 . In this case, the frame 15 and the support body 40 are joined so that the opening 15a of the frame 15 and the second through hole 45 of the support body 40 overlap with each other in plan view. At this time, as shown in FIG. 12A , the vapor deposition cover 20 is placed on the frame 15 so that the support 40 is in contact with the frame 15 . Then, as shown in FIG. 12B , the support body 40 is irradiated with the laser light La, so that a part of the support body 40 and a part of the frame 15 are melted by the heat generated by the irradiation of the laser light La, so that the support body 40 and the frame are melted. 15 are joined to each other by welding. At this time, the support body 40 and the frame 15 can also be joined to each other in a state where the vapor deposition cover 20 is stretched in the surface direction, so as to suppress the deflection of the vapor deposition cover 20 and perform the effective area 22 of the cover 30. Position adjustment.

藉此，如圖12C所示，形成將支持體40與框架15接合之第2接合部19b，獲得具備蒸鍍罩20、及與蒸鍍罩20之支持體40接合且設置有俯視時與第2貫通孔45重疊之開口15a之框架15的蒸鍍罩裝置10。再者，並不限定於此，支持體40與框架15亦可藉由例如接著劑等其他固定方法相互接合。As a result, as shown in FIG. 12C , the second joint portion 19b for joining the support 40 and the frame 15 is formed, and the support 40 including the vapor deposition cover 20 and the vapor deposition cover 20 is joined and provided with the first The vapor deposition cover apparatus 10 of the frame 15 of the opening 15a having the two through holes 45 overlapped. Furthermore, it is not limited to this, and the support body 40 and the frame 15 may be joined to each other by other fixing methods such as adhesive.

其次，主要參照圖13A至圖14對使用藉由上述步驟所獲得之蒸鍍罩裝置10使蒸鍍材料98蒸鍍於有機EL基板92的蒸鍍材料之蒸鍍方法進行說明。13A to 14 , a description will be given of a method of vapor deposition of the vapor deposition material for vapor deposition of the vapor deposition material 98 on the organic EL substrate 92 using the vapor deposition mask device 10 obtained by the above steps.

首先，如圖13A所示，準備藉由上述步驟所獲得之蒸鍍罩裝置10。此時，準備收容有蒸鍍材料98之坩堝94及加熱器96，準備蒸鍍裝置90。First, as shown in FIG. 13A, the vapor deposition mask apparatus 10 obtained by the above-mentioned steps is prepared. At this time, the crucible 94 containing the vapor deposition material 98 and the heater 96 are prepared, and the vapor deposition apparatus 90 is prepared.

又，準備有機EL基板92。Furthermore, the organic EL substrate 92 is prepared.

然後，如圖13B所示，將有機EL基板92設置於蒸鍍罩裝置10之罩30上。此時，例如一面直接觀察有機EL基板92之未圖示之對準標記、及蒸鍍罩20之未圖示之對準標記並以該等對準標記彼此重疊之方式進行有機EL基板92之定位一面將有機EL基板92設置於蒸鍍罩裝置10。Then, as shown in FIG. 13B , the organic EL substrate 92 is placed on the cover 30 of the vapor deposition cover apparatus 10 . At this time, for example, the alignment marks (not shown in the figure) of the organic EL substrate 92 and the alignment marks (not shown in the figure) of the vapor deposition cover 20 are directly observed, and the alignment marks of the organic EL substrate 92 are overlapped with each other. The organic EL substrate 92 is set on the vapor deposition cover apparatus 10 while being positioned.

繼而，使蒸鍍材料98蒸鍍於蒸鍍罩裝置10之罩30上所設置之有機EL基板92上。此時，例如，如圖14所示，於有機EL基板92之與蒸鍍罩裝置10相反之側之面配置磁石93。藉由如此設置磁石93，可利用磁力使蒸鍍罩裝置10向磁石93側牽引而使罩30密接於有機EL基板92。然後，以蒸鍍裝置90之內部成為高真空狀態之方式，利用未圖示之排氣機構對蒸鍍裝置90之內部進行排氣。然後，加熱器96對坩堝94進行加熱而使蒸鍍材料98蒸發。繼而，自坩堝94蒸發而到達至蒸鍍罩裝置10之蒸鍍材料98通過支持體40之第2貫通孔45及罩30之第1貫通孔35而附著於有機EL基板92(參照圖1)。Next, the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 provided on the cover 30 of the vapor deposition cover apparatus 10 . At this time, for example, as shown in FIG. 14 , the magnet 93 is arranged on the surface of the organic EL substrate 92 on the opposite side to the vapor deposition cap device 10 . By providing the magnet 93 in this way, the vapor deposition cap device 10 can be pulled toward the magnet 93 side by magnetic force, and the cap 30 can be brought into close contact with the organic EL substrate 92 . Then, the inside of the vapor deposition device 90 is evacuated by an exhaust mechanism not shown so that the inside of the vapor deposition device 90 is in a high vacuum state. Then, the heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 . Then, the vapor deposition material 98 evaporated from the crucible 94 and reached to the vapor deposition cover apparatus 10 is attached to the organic EL substrate 92 through the second through holes 45 of the support 40 and the first through holes 35 of the cover 30 (see FIG. 1 ). .

以此方式，以與罩30之第1貫通孔35之位置對應之所需圖案將蒸鍍材料98蒸鍍於有機EL基板92。In this way, the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 in a desired pattern corresponding to the position of the first through hole 35 of the cover 30 .

根據本實施形態，蒸鍍罩20具備：罩30，其具有形成有第1貫通孔35之鍍覆層31；及支持體40，其與罩30接合，形成有俯視時與第1貫通孔35重疊之第2貫通孔45；且支持體40之厚度為0.20 mm以上2.0 mm以下。如此，藉由支持體40之厚度T1為0.20 mm以上，可提昇蒸鍍罩20之剛性。藉此，可抑制罩30產生皺褶或變形。又，藉由支持體40之厚度T1為2.0 mm以下，可抑制於自與支持體40接合之罩30將基材51剝離時不能將基材51剝離之缺陷。According to the present embodiment, the vapor deposition cover 20 includes the cover 30 having the plating layer 31 in which the first through holes 35 are formed, and the support 40 joined to the cover 30 and formed with the first through holes 35 in plan view. The overlapping second through holes 45; and the thickness of the support body 40 is not less than 0.20 mm and not more than 2.0 mm. In this way, when the thickness T1 of the support body 40 is 0.20 mm or more, the rigidity of the vapor deposition cover 20 can be improved. Thereby, wrinkling and deformation of the cover 30 can be suppressed. Moreover, when the thickness T1 of the support body 40 is 2.0 mm or less, the defect that the base material 51 cannot be peeled off when the base material 51 is peeled off from the cover 30 joined to the support body 40 can be suppressed.

又，根據本實施形態，支持體40包含剛性率為50 GPa以上65 GPa以下之材料。如此，藉由支持體40之材料之剛性率為50 GPa以上，可有效提昇蒸鍍罩20之剛性。藉此，可抑制罩30產生皺褶或變形。又，藉由支持體40之材料之剛性率為65 GPa以下，可抑制於自與支持體40接合之罩30將基材51剝離時不能將基材51剝離之缺陷。Moreover, according to this embodiment, the support body 40 consists of a material whose rigidity rate is 50 GPa or more and 65 GPa or less. In this way, the rigidity of the vapor deposition cover 20 can be effectively improved due to the rigidity ratio of the material of the support body 40 being more than 50 GPa. Thereby, wrinkling and deformation of the cover 30 can be suppressed. Moreover, since the rigidity rate of the material of the support body 40 is 65 GPa or less, the defect that the base material 51 cannot be peeled off when the base material 51 is peeled off from the cover 30 joined to the support body 40 can be suppressed.

再者，可對上述實施形態施加各種變更。以下，一面視需要參照圖式一面對變化例進行說明。於以下之說明及以下之說明所使用之圖式中，對可與上述實施形態同樣地構成之部分，使用與對上述實施形態中之對應之部分使用之符號相同之符號，並省略重複說明。又，於明確於變化例中亦獲得上述實施形態中獲得之作用效果之情形時，亦有省略其說明之情況。In addition, various changes can be added to the above-mentioned embodiment. Hereinafter, modifications will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiment are used for parts that can be configured in the same manner as in the above-described embodiment, and repeated descriptions are omitted. In addition, when it becomes clear that the effect obtained by the above-mentioned embodiment is obtained also in a modification, the description may be abbreviate|omitted.

於上述本實施形態中，對蒸鍍罩20使用具有複數個有效區域22之單個罩30之例進行了說明。然而，並不限定於此，如圖15所示，亦可使用於框架15分配有複數個罩30之蒸鍍罩20。再者，於圖15中，為了使圖式明瞭，而省略了支持體40之第2貫通孔45之圖示。In the above-described present embodiment, an example in which a single cover 30 having a plurality of effective regions 22 is used for the vapor deposition cover 20 has been described. However, it is not limited to this, and as shown in FIG. 15 , a vapor deposition cover 20 in which a plurality of covers 30 are allocated to the frame 15 may also be used. In addition, in FIG. 15, illustration of the 2nd through-hole 45 of the support body 40 is abbreviate|omitted in order to clarify a figure.

於上述本實施形態中，對罩30之鍍覆層31具備第1金屬層32、及設置於第1金屬層32上之第2金屬層37而由2層構造形成之例進行了說明。然而，並不限定於此，亦可不於第1金屬層32上形成第2金屬層37而使鍍覆層31由1層構造形成。In the above-described present embodiment, an example in which the plating layer 31 of the cover 30 is provided with the first metal layer 32 and the second metal layer 37 provided on the first metal layer 32 and is formed by a two-layer structure has been described. However, the present invention is not limited to this, and the plating layer 31 may be formed of a one-layer structure without forming the second metal layer 37 on the first metal layer 32 .

又，於上述本實施形態中，對支持體40由單個構件構成之例進行了說明。然而，並不限定於此，如圖16所示，支持體40亦可具有相互接合之複數個層。於本變化例中，支持體40亦可具有與罩30接合之第1層40a、及與第1層40a接合之第2層40b。於該情形時，支持體40之第2貫通孔45亦可貫通第1層40a及第2層40b。即，於支持體40之第1層40a亦可以特定圖案設置第1開口部40c，於第2層40b亦可設置與第1開口部40c連通之第2開口部40d。而且，亦可藉由第1開口部40c與第2開口部40d相互連通，而劃定貫通支持體40之第1層40a及第2層40b之第2貫通孔45。In addition, in the above-described present embodiment, the example in which the support body 40 is constituted by a single member has been described. However, it is not limited to this, and as shown in FIG. 16 , the support 40 may also have a plurality of layers joined to each other. In this modification, the support body 40 may also have a first layer 40a bonded to the cover 30 and a second layer 40b bonded to the first layer 40a. In this case, the second through holes 45 of the support body 40 may penetrate through the first layer 40a and the second layer 40b. That is, the first opening 40c may be provided in a specific pattern in the first layer 40a of the support 40, and the second opening 40d communicating with the first opening 40c may be provided in the second layer 40b. Moreover, the 1st opening part 40c and the 2nd opening part 40d may communicate with each other, and the 2nd through-hole 45 which penetrates the 1st layer 40a of the support body 40, and the 2nd layer 40b may be defined.

如此，藉由支持體40具有第1層40a及第2層40b，可容易獲得具有所需之厚度T1之支持體40。即，於形成支持體40之第2貫通孔45時，如上所述，藉由包含曝光步驟及顯影步驟之光微影法使金屬板圖案化。此時，於金屬板之厚度較厚之情形時，有可能難以使金屬板圖案化為所需圖案。相對於此，藉由支持體40具有第1層40a、及第2層40b，可於將第1層40a及第2層40b接合前，分別形成第1層40a之第1開口部40c及第2層40b之第2開口部40d。而且，藉由形成有第1開口部40c之第1層40a與形成有第2開口部40d之第2層40b相互接合，可容易形成第2貫通孔45而獲得具有充分厚度T1之支持體40。In this way, since the support body 40 has the first layer 40a and the second layer 40b, the support body 40 having the desired thickness T1 can be easily obtained. That is, when the second through holes 45 of the support 40 are formed, as described above, the metal plate is patterned by the photolithography method including the exposure step and the development step. At this time, when the thickness of the metal plate is thick, it may be difficult to pattern the metal plate into a desired pattern. On the other hand, since the support 40 has the first layer 40a and the second layer 40b, the first opening 40c and the first opening 40c of the first layer 40a can be respectively formed before the first layer 40a and the second layer 40b are joined together. The second opening 40d of the second layer 40b. Furthermore, by joining the first layer 40a having the first openings 40c and the second layer 40b having the second openings 40d formed together, the second through holes 45 can be easily formed to obtain the support 40 having a sufficient thickness T1 .

又，該等第1層40a及第2層40b亦可藉由接著劑、焊料或熔接相互接合。於該情形時，亦可如上述第2接合部19b(參照圖3及圖4)般使未圖示之接合部沿與支持體40之外緣40e之延伸方向平行之方向排列。又，於該情形時，第1層40a與第2層40b之接合面47a較佳為自側方(即，圖16所示之左右方向)經金屬48覆蓋。於該情形時，金屬48亦可藉由例如利用熔接以將接合面47a自側方覆蓋之方式進行填充而形成，亦可藉由利用鍍覆處理以將接合面47a自側方覆蓋之方式使金屬析出而形成。然，於利用蒸鍍罩裝置10使蒸鍍材料98蒸鍍於有機EL基板92之情形時，有反覆使用蒸鍍罩裝置10之蒸鍍罩20之情形。於該情形時，每次使用蒸鍍罩20時，便將蒸鍍罩20洗淨而將附著於蒸鍍罩20之蒸鍍材料98去除。另一方面，於第1層40a及第2層40b之接合面47a露出之情形時，有於將蒸鍍罩20洗淨時用以將蒸鍍材料98洗淨之洗淨液進入至第1層40a與第2層40b之間之間隙之可能性。於使用洗淨液進入至第1層40a與第2層40b之間之間隙之蒸鍍罩20使蒸鍍材料98蒸鍍於有機EL基板92之情形時，有進入至第1層40a與第2層40b之間之間隙之洗淨液附著於有機EL基板92之虞。於該情形時，有可能於有機EL基板92中產生無法獲得所需之對比度等各種缺陷。Moreover, these 1st layer 40a and the 2nd layer 40b may be mutually joined by adhesive agent, solder, or welding. In this case, like the above-mentioned second joint portion 19b (see FIGS. 3 and 4 ), the joint portions not shown may be arranged in a direction parallel to the extending direction of the outer edge 40e of the support 40 . In addition, in this case, the joint surface 47a of the first layer 40a and the second layer 40b is preferably covered by the metal 48 from the side (ie, the left-right direction shown in FIG. 16 ). In this case, the metal 48 may be formed by filling the bonding surface 47a from the side by, for example, welding, or by covering the bonding surface 47a from the side by the plating process. formed by metal precipitation. However, when the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 by the vapor deposition cover apparatus 10, the vapor deposition cover 20 of the vapor deposition cover apparatus 10 may be repeatedly used. In this case, every time the vapor deposition cover 20 is used, the vapor deposition cover 20 is washed and the vapor deposition material 98 adhering to the vapor deposition cover 20 is removed. On the other hand, when the joint surface 47a of the first layer 40a and the second layer 40b is exposed, the cleaning solution for cleaning the vapor deposition material 98 when cleaning the vapor deposition cover 20 may enter the first layer. Possibility of gap between layer 40a and second layer 40b. When the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 by using the vapor deposition cover 20 that enters the gap between the first layer 40 a and the second layer 40 b, the cleaning liquid enters the first layer 40 a and the second layer 40 b. The cleaning solution in the gap between the two layers 40b may adhere to the organic EL substrate 92. In this case, various defects such as the inability to obtain a desired contrast ratio may occur in the organic EL substrate 92 .

相對於此，於本變化例中，第1層40a與第2層40b之接合面47a自側方經金屬48覆蓋。藉此，可抑制洗淨液進入至第1層40a與第2層40b之間之間隙之缺陷。On the other hand, in this modification, the joint surface 47a of the first layer 40a and the second layer 40b is covered by the metal 48 from the side. Thereby, it is possible to prevent the cleaning liquid from entering the gap between the first layer 40a and the second layer 40b.

於製作此種支持體40之情形時，首先，準備與罩30接合之第1層40a、及與第1層40a接合之第2層40b。於該情形時，首先，準備金屬板，藉由包含曝光步驟及顯影步驟之光微影法使金屬板圖案化。藉此，如圖17A所示，於第1層40a形成第1開口部40c，並於第2層40b形成第2開口部40d。In the case of producing such a support 40, first, the first layer 40a bonded to the cover 30 and the second layer 40b bonded to the first layer 40a are prepared. In this case, first, a metal plate is prepared, and the metal plate is patterned by a photolithography method including an exposure step and a development step. Thereby, as shown to FIG. 17A, the 1st opening part 40c is formed in the 1st layer 40a, and the 2nd opening part 40d is formed in the 2nd layer 40b.

然後，如圖17B所示，將第1層40a與第2層40b相互接合。此時，第1層40a及第2層40b藉由接著劑、焊料或熔接相互接合。例如，於將第1層40a及第2層40b藉由熔接相互接合之情形時，使第1層40a與第2層40b重疊，並對第1層40a或第2層40b照射上述雷射光La而使第1層40a之一部分及第2層40b之一部分因藉由雷射光La之照射產生之熱而融解，從而將第1層40a與第2層40b熔接藉由相互接合。Then, as shown in FIG. 17B , the first layer 40a and the second layer 40b are joined to each other. At this time, the first layer 40a and the second layer 40b are joined to each other by adhesive, solder, or welding. For example, when the first layer 40a and the second layer 40b are bonded to each other by welding, the first layer 40a and the second layer 40b are overlapped, and the first layer 40a or the second layer 40b is irradiated with the above-mentioned laser light La Then, a part of the first layer 40a and a part of the second layer 40b are melted by the heat generated by the irradiation of the laser light La, and the first layer 40a and the second layer 40b are welded and bonded to each other.

繼而，如圖17C所示，利用金屬48覆蓋第1層40a與第2層40b之接合面47a。於該情形時，可藉由例如熔接以將接合面47a自側方(即，圖17C所示之左右方向)覆蓋之方式填充金屬48，亦可藉由鍍覆處理以將接合面47a自側方覆蓋之方式使金屬析出而形成金屬48。以此方式，獲得支持體40。Next, as shown in FIG. 17C , the bonding surface 47a of the first layer 40a and the second layer 40b is covered with the metal 48 . In this case, the metal 48 can be filled with the metal 48 to cover the joint surface 47a from the side (ie, the left-right direction shown in FIG. 17C ) by, for example, welding, or the joint surface 47a can be covered from the side by plating. The metal 48 is formed by precipitation of the metal by means of the square cover. In this way, the support body 40 is obtained.

又，於本變化例中，如圖18A所示，可利用金屬48將各層40a、40b自側方(即，圖18A所示之左右方向)完全覆蓋，亦可利用金屬48將第2層40b之下表面覆蓋。In addition, in this modification, as shown in FIG. 18A , the layers 40a and 40b can be completely covered by the metal 48 from the side (ie, the left-right direction shown in FIG. 18A ), and the second layer 40b can also be covered by the metal 48 . lower surface coverage.

又，於本變化例中，支持體40亦可具有3個以上之層。例如，如圖18B所示，支持體40亦可進而具有與第2層40b接合之第3層40f。第2層40b及第3層40f亦可藉由接著劑、焊料或熔接相互接合。於該情形時，支持體40之第2貫通孔45亦可貫通各層40a、40b、40f。即，亦可於支持體40之第3層40f設置與第2層40b之第2開口部40d連通之第3開口部40g。而且，亦可藉由第1開口部40c、第2開口部40d及第3開口部40g相互連通，而劃定貫通支持體40之第1層40a、第2層40b及第3層40f之第2貫通孔45。又，於該情形時，亦較佳為第1層40a與第2層40b之接合面47a自側方(即，圖18B所示之左右方向)經金屬48覆蓋。進而，第2層40b與第3層40f之接合面47b較佳為自側方(即，圖18B所示之左右方向)經金屬48覆蓋。於該情形時，金屬48可藉由例如利用熔接以將接合面47a及接合面47b自側方覆蓋之方式進行填充而形成，亦可藉由利用鍍覆處理以將接合面47a及接合面47b自側方覆蓋之方式使金屬析出而形成。Moreover, in this modification, the support body 40 may have three or more layers. For example, as shown in FIG. 18B , the support 40 may further have a third layer 40f bonded to the second layer 40b. The second layer 40b and the third layer 40f may be joined to each other by adhesive, solder, or welding. In this case, the second through holes 45 of the support body 40 may pass through the layers 40a, 40b, and 40f. That is, the 3rd opening part 40g which communicates with the 2nd opening part 40d of the 2nd layer 40b may be provided in the 3rd layer 40f of the support body 40. Furthermore, the first opening 40c, the second opening 40d, and the third opening 40g may communicate with each other to define the first layer 40a, the second layer 40b, and the third layer 40f penetrating the support 40. 2 through holes 45. In this case, it is also preferable that the bonding surface 47a of the first layer 40a and the second layer 40b is covered by the metal 48 from the side (ie, the left-right direction shown in FIG. 18B ). Furthermore, the bonding surface 47b of the second layer 40b and the third layer 40f is preferably covered by the metal 48 from the side (ie, the left-right direction shown in FIG. 18B ). In this case, the metal 48 may be formed by filling the bonding surface 47a and the bonding surface 47b from the side by, for example, welding, or by plating the bonding surface 47a and the bonding surface 47b. It is formed by precipitation of metal by covering from the side.

於製作圖18B所示之支持體40之情形時，進而準備與第2層40b接合之第3層40f。於該情形時，與第1層40a及第2層40b同樣地準備金屬板，並藉由包含曝光步驟及顯影步驟之光微影法使金屬板圖案化。藉此，如圖18C所示，於第3層40f形成第3開口部40g。In the case of producing the support body 40 shown in FIG. 18B , the third layer 40f to be joined to the second layer 40b is further prepared. In this case, a metal plate is prepared in the same manner as the first layer 40a and the second layer 40b, and the metal plate is patterned by a photolithography method including an exposure step and a development step. Thereby, as shown to FIG. 18C, the 3rd opening part 40g is formed in the 3rd layer 40f.

然後，如圖18D所示，將與第1層40a接合之第2層40b與第3層40f相互接合。此時，第2層40b及第3層40f藉由接著劑、焊料或熔接相互接合。例如，於將第2層40b及第3層40f藉由熔接相互接合之情形時，使第2層40b與第3層40f重疊，並對第3層40f照射上述雷射光La，而使第3層40f之一部分及第2層40b之一部分因藉由雷射光La之照射產生之熱而融解，從而將第2層40b與第3層40f熔接藉由相互接合。Then, as shown in FIG. 18D , the second layer 40b and the third layer 40f which are bonded to the first layer 40a are bonded to each other. At this time, the second layer 40b and the third layer 40f are joined to each other by adhesive, solder, or welding. For example, when the second layer 40b and the third layer 40f are bonded to each other by welding, the second layer 40b and the third layer 40f are overlapped, and the third layer 40f is irradiated with the above-mentioned laser light La, so that the third layer 40f is irradiated with the laser light La. A part of the layer 40f and a part of the second layer 40b are melted by the heat generated by the irradiation of the laser light La, and the second layer 40b and the third layer 40f are welded and bonded to each other.

繼而，如圖18E所示，利用金屬48覆蓋第1層40a與第2層40b之接合面47a。又，利用金屬48覆蓋第2層40b與第3層40f之接合面47b。於該情形時，亦可例如藉由熔接以將接合面47a、47b自側方(即，圖18E所示之左右方向)覆蓋之方式填充金屬48，亦可藉由鍍覆處理以將接合面47a、47b自自側方覆蓋之方式使金屬析出而形成金屬48。以此方式獲得支持體40。Next, as shown in FIG. 18E , the bonding surface 47 a of the first layer 40 a and the second layer 40 b is covered with the metal 48 . Moreover, the junction surface 47b of the 2nd layer 40b and the 3rd layer 40f is covered with the metal 48. In this case, the metal 48 can also be filled with the metal 48 so as to cover the joint surfaces 47a and 47b from the side (ie, the left-right direction shown in FIG. 18E ), for example, by welding, or the joint surfaces can also be covered by a plating process. 47a and 47b form the metal 48 by depositing the metal so as to cover from the side. The support body 40 is obtained in this way.

又，於本變化例中，如圖18F所示，可利用金屬48將各層40a、40b、40f自側方(即，圖18C所示之左右方向)完全覆蓋，亦可利用金屬48將第3層40f之下表面覆蓋。Furthermore, in this modification, as shown in FIG. 18F , the layers 40 a , 40 b , and 40 f can be completely covered by the metal 48 from the side (ie, the left and right directions shown in FIG. 18C ). The lower surface of layer 40f is covered.

又，於上述本實施形態中，對支持體40之第2貫通孔45具有俯視時大於罩30之有效區域22之尺寸之例進行了說明。然而，並不限定於此，第2貫通孔45亦可具有俯視時小於有效區域22之尺寸。又，複數個有效區域22中之一部分有效區域22亦可由支持區域46覆蓋。In addition, in the above-described present embodiment, the example in which the second through hole 45 of the support body 40 has a size larger than that of the effective region 22 of the cover 30 in plan view has been described. However, it is not limited to this, and the second through hole 45 may have a size smaller than that of the effective area 22 in plan view. Also, a part of the effective area 22 of the plurality of effective areas 22 may be covered by the support area 46 .

又，於上述本實施形態中，對於導電層52上析出鍍覆層31之例進行了說明。然而，並不限定於此，亦可於基材51上直接析出鍍覆層31。於該情形時，首先，準備具有導電性之材料、例如包含不鏽鋼或黃銅鋼之基材51。然後，如圖19A所示，於具有導電性之基材51上形成具有特定圖案之第1抗蝕圖案53。繼而，如圖19B所示，對形成有第1抗蝕圖案53之基材51上供給第1鍍覆液，而於基材51上析出鍍覆層31。然後，如圖19C所示，可藉由將第1抗蝕圖案53去除而於基材51上析出鍍覆層31。再者，雖未圖示，但鍍覆層31亦可具備設置於第1金屬層32上之第2金屬層37而由2層構造形成。In addition, in the above-described present embodiment, the example in which the plating layer 31 is deposited on the conductive layer 52 has been described. However, it is not limited to this, and the plating layer 31 may be directly deposited on the base material 51 . In this case, first, a material having conductivity, for example, a base material 51 including stainless steel or brass steel is prepared. Then, as shown in FIG. 19A , a first resist pattern 53 having a specific pattern is formed on the substrate 51 having conductivity. Next, as shown in FIG. 19B , the first plating solution is supplied to the base material 51 on which the first resist pattern 53 is formed, and the plating layer 31 is deposited on the base material 51 . Then, as shown in FIG. 19C , the plating layer 31 can be deposited on the base material 51 by removing the first resist pattern 53 . In addition, although not shown, the plating layer 31 may include the second metal layer 37 provided on the first metal layer 32, and may be formed with a two-layer structure.

再者，以上對針對上述實施形態之若干變化例進行了說明，當然亦可將複數個變化例適當組合而應用。In addition, although some modification examples with respect to the above-mentioned embodiment have been described above, it goes without saying that a plurality of modification examples can be appropriately combined and applied.

10:蒸鍍罩裝置 15:框架 15a:開口 17:耳部 18:中間部 19a:第1接合部 19b:第2接合部 20:蒸鍍罩 22:有效區域 23:周圍區域 30:罩 30a:第1面 30b:第2面 30c:第1開口部 30d:第2開口部 30e:外緣 31:鍍覆層 32:第1金屬層 33:端部 35:第1貫通孔 36:壁面 37:第2金屬層 38:端部 40:支持體 40a:第1層 40b:第2層 40c:第1開口部 40d:第2開口部 40e:外緣 40f:第3層 40g:第3開口部 41:連接部 45:第2貫通孔 46:支持區域 47a:接合面 47b:接合面 48:金屬 50:圖案基板 51:基材 52:導電層 52a:導電性材料層 53:第1抗蝕圖案 54:端部 55:第2抗蝕圖案 56:間隙 64:金屬板 64a:第1面 64b:第2面 65a:第1抗蝕圖案 65b:第2抗蝕圖案 69:樹脂 70a:第1中間構件 90:蒸鍍裝置 92:被蒸鍍基板 93:磁石 94:坩堝 96:加熱器 98:蒸鍍材料 100:有機EL顯示裝置 400a:第1面 400b:第2面 401:第1凹部 402:第2凹部 E:彈性體 F:力 L1:路徑 La:雷射光 N:法線方向 n:法線方向 S:表面積 S0:開口尺寸 S1:開口尺寸 S2:開口尺寸 T0:厚度 T1:厚度 θ1:角度 Ø:斜率10: Evaporation hood device 15: Frame 15a: Opening 17: Ears 18: Middle part 19a: 1st joint 19b: 2nd joint 20: Evaporation cover 22: Effective area 23: Surrounding area 30: Hood 30a: Side 1 30b: Side 2 30c: 1st opening 30d: Second opening 30e: outer edge 31: Plating layer 32: 1st metal layer 33: End 35: 1st through hole 36: Wall 37: 2nd metal layer 38: End 40: Support 40a: Tier 1 40b: Tier 2 40c: 1st opening 40d: Second opening 40e: outer edge 40f: Layer 3 40g: The third opening 41: Connection part 45: 2nd through hole 46: Support area 47a: Joint surface 47b: Joint surface 48: Metal 50: Pattern substrate 51: Substrate 52: Conductive layer 52a: conductive material layer 53: 1st resist pattern 54: End 55: Second resist pattern 56: Gap 64: sheet metal 64a: Side 1 64b: Side 2 65a: 1st resist pattern 65b: Second resist pattern 69: Resin 70a: 1st intermediate member 90: Evaporation device 92: Evaporated substrate 93: Magnet 94: Crucible 96: Heater 98: Evaporation material 100: Organic EL Display Device 400a: Side 1 400b: Side 2 401: 1st recess 402: 2nd recess E: Elastomer F: force L1: Path La: laser light N: normal direction n: normal direction S: surface area S0: opening size S1: Opening size S2: Opening size T0: Thickness T1: Thickness θ1: angle Ø: slope

圖1係用以對本發明之一實施形態進行說明之圖，且係用以對具有蒸鍍罩裝置之蒸鍍裝置及使用該蒸鍍裝置之蒸鍍方法進行說明之圖。 圖2係表示由圖1所示之蒸鍍裝置製造之有機EL顯示裝置之一例之剖視圖。 圖3係概略性表示具有蒸鍍罩之蒸鍍罩裝置之一例之俯視圖。 圖4係於與圖3之IV-IV線對應之剖面中表示蒸鍍罩裝置之剖視圖。 圖5係表示圖3之蒸鍍罩裝置之罩之局部放大圖(圖3之V部放大圖)。 圖6A係於與圖5之VIA-VIA線對應之剖面中表示罩之剖視圖。 圖6B係更詳細表示圖4之支持體之剖視圖。 圖7A係用以對剛性率進行說明之概略立體圖。 圖7B係用以對使用蒸鍍裝置之蒸鍍方法進行說明之圖。 圖8A係表示製造圖案基板之方法之一例之一步驟之圖，該圖案基板用於藉由鍍覆處理製造罩。 圖8B係表示製造圖案基板之方法之一例之一步驟之圖，該圖案基板用於藉由鍍覆處理製造罩。 圖8C係表示製造圖案基板之方法之一例之一步驟之圖，該圖案基板用於藉由鍍覆處理製造罩。 圖8D係表示製造圖案基板之方法之一例之一步驟之圖，該圖案基板用於藉由鍍覆處理製造罩。 圖9A係表示藉由鍍覆處理製造罩之方法之一例之一步驟之圖。 圖9B係表示藉由鍍覆處理製造罩之方法之一例之一步驟之圖。 圖9C係表示藉由鍍覆處理製造罩之方法之一例之一步驟之圖。 圖9D係表示藉由鍍覆處理製造罩之方法之一例之一步驟之圖。 圖10A係表示於金屬板上形成抗蝕圖案之步驟之圖。 圖10B係表示第1面蝕刻步驟之圖。 圖10C係表示第2面蝕刻步驟之圖。 圖10D係表示自金屬板將樹脂及抗蝕圖案去除之步驟之圖。 圖11A係表示蒸鍍罩之製造方法之一例之一步驟之圖。 圖11B係表示蒸鍍罩之製造方法之一例之一步驟之圖。 圖11C係表示蒸鍍罩之製造方法之一例之一步驟之圖。 圖12A係表示蒸鍍罩裝置之製造方法之一例之一步驟之圖。 圖12B係表示蒸鍍罩裝置之製造方法之一例之一步驟之圖。 圖12C係表示蒸鍍罩裝置之製造方法之一例之一步驟之圖。 圖13A係表示使蒸鍍材料蒸鍍於有機EL基板之步驟之圖。 圖13B係表示使蒸鍍材料蒸鍍於有機EL基板之步驟之圖。 圖14係表示使蒸鍍材料蒸鍍於有機EL基板之步驟之圖。 圖15係概略性表示罩之變化例之俯視圖。 圖16係表示支持體之變化例之剖視圖。 圖17A係表示支持體之製造方法之變化例之剖視圖。 圖17B係表示支持體之製造方法之變化例之剖視圖。 圖17C係表示支持體之製造方法之變化例之剖視圖。 圖18A係表示支持體之變化例之剖視圖。 圖18B係表示支持體之變化例之剖視圖。 圖18C係表示支持體之製造方法之變化例之剖視圖。 圖18D係表示支持體之製造方法之變化例之剖視圖。 圖18E係表示支持體之製造方法之變化例之剖視圖。 圖18F係表示支持體之變化例之剖視圖。 圖19A係表示罩之製造方法之變化例之剖視圖。 圖19B係表示罩之製造方法之變化例之剖視圖。 圖19C係表示罩之製造方法之變化例之剖視圖。FIG. 1 is a diagram for explaining an embodiment of the present invention, and is a diagram for explaining a vapor deposition apparatus having a vapor deposition cover apparatus and a vapor deposition method using the vapor deposition apparatus. FIG. 2 is a cross-sectional view showing an example of an organic EL display device manufactured by the vapor deposition apparatus shown in FIG. 1 . FIG. 3 is a plan view schematically showing an example of a vapor deposition hood apparatus having a vapor deposition hood. FIG. 4 is a cross-sectional view showing the vapor deposition mask device in a cross-section corresponding to the line IV-IV of FIG. 3 . FIG. 5 is a partial enlarged view showing the cover of the vapor deposition cover apparatus of FIG. 3 (the enlarged view of the V part in FIG. 3 ). FIG. 6A is a cross-sectional view showing the cover in a cross-section corresponding to the VIA-VIA line in FIG. 5 . 6B is a cross-sectional view showing the support of FIG. 4 in more detail. FIG. 7A is a schematic perspective view for explaining the rigidity ratio. FIG. 7B is a diagram for explaining the vapor deposition method using the vapor deposition apparatus. 8A is a diagram showing a step of an example of a method of manufacturing a pattern substrate for manufacturing a cover by a plating process. FIG. 8B is a diagram showing a step of an example of a method of manufacturing a pattern substrate for manufacturing a cover by a plating process. 8C is a diagram showing a step of an example of a method of manufacturing a patterned substrate for manufacturing a cover by a plating process. FIG. 8D is a diagram showing a step of an example of a method of manufacturing a patterned substrate for manufacturing a cover by a plating process. FIG. 9A is a diagram showing one step of an example of a method of manufacturing a cap by a plating process. FIG. 9B is a diagram showing a step of an example of a method of manufacturing a cap by a plating process. FIG. 9C is a diagram showing a step of an example of a method of manufacturing a cap by a plating process. FIG. 9D is a diagram showing one step of an example of a method of manufacturing a cap by a plating process. FIG. 10A is a diagram showing a step of forming a resist pattern on a metal plate. FIG. 10B is a view showing the etching step of the first surface. FIG. 10C is a diagram showing the etching step of the second surface. FIG. 10D is a diagram showing the step of removing the resin and the resist pattern from the metal plate. FIG. 11A is a diagram showing a step of an example of a method of manufacturing a vapor deposition cover. FIG. 11B is a diagram showing a step of an example of a method of manufacturing a vapor deposition cover. FIG. 11C is a diagram showing a step of an example of a method of manufacturing a vapor deposition cover. FIG. 12A is a diagram showing a step of an example of a method of manufacturing a vapor deposition hood apparatus. FIG. 12B is a diagram showing a step of an example of a method of manufacturing a vapor deposition hood apparatus. FIG. 12C is a diagram showing one step of an example of a manufacturing method of a vapor deposition hood apparatus. FIG. 13A is a diagram showing a step of vapor-depositing a vapor deposition material on an organic EL substrate. FIG. 13B is a diagram showing a step of vapor-depositing a vapor deposition material on an organic EL substrate. FIG. 14 is a diagram showing a step of vapor-depositing a vapor deposition material on an organic EL substrate. FIG. 15 is a plan view schematically showing a modification of the cover. Fig. 16 is a cross-sectional view showing a modification of the support. Fig. 17A is a cross-sectional view showing a modification of the manufacturing method of the support. Fig. 17B is a cross-sectional view showing a modification of the manufacturing method of the support. Fig. 17C is a cross-sectional view showing a modification of the manufacturing method of the support. Fig. 18A is a cross-sectional view showing a modification of the support. Fig. 18B is a cross-sectional view showing a modification of the support. Fig. 18C is a cross-sectional view showing a modification of the manufacturing method of the support. Fig. 18D is a cross-sectional view showing a modification of the manufacturing method of the support. FIG. 18E is a cross-sectional view showing a modification of the manufacturing method of the support. Fig. 18F is a cross-sectional view showing a modification of the support. FIG. 19A is a cross-sectional view showing a modification of the manufacturing method of the cover. FIG. 19B is a cross-sectional view showing a modification of the manufacturing method of the cover. FIG. 19C is a cross-sectional view showing a modification of the manufacturing method of the cover.

10:蒸鍍罩裝置 10: Evaporation hood device

15:框架 15: Frame

15a:開口 15a: Opening

17:耳部 17: Ears

18:中間部 18: Middle part

19a:第1接合部 19a: 1st joint

19b:第2接合部 19b: 2nd joint

20:蒸鍍罩 20: Evaporation cover

22:有效區域 22: Effective area

23:周圍區域 23: Surrounding area

30:罩 30: Hood

30e:外緣 30e: outer edge

40:支持體 40: Support

40e:外緣 40e: outer edge

45:第2貫通孔 45: 2nd through hole

46:支持區域 46: Support area

Claims (12)

一種蒸鍍罩之製造方法，其具備如下步驟：準備與基材接合且具有形成有第1貫通孔之鍍覆層之罩；準備形成有第2貫通孔之支持體；以俯視時上述支持體之上述第2貫通孔與上述罩之上述第1貫通孔重疊之方式，將上述支持體與上述罩接合；及自上述罩將上述基材剝離；且上述支持體之厚度為0.20mm以上2.0mm以下。 A method for manufacturing a vapor deposition cover, comprising the steps of: preparing a cover for bonding with a base material and having a plated layer formed with a first through hole; preparing a support body formed with a second through hole; and in a plan view of the support body The above-mentioned second through hole and the above-mentioned first through-hole of the above-mentioned cover are overlapped, and the above-mentioned support body and the above-mentioned cover are joined; and the above-mentioned base material is peeled off from the above-mentioned cover; the following. 如請求項1之蒸鍍罩之製造方法，其中於上述基材形成導電層，且上述第1貫通孔係藉由於上述導電層上析出上述鍍覆層而形成。 The method for producing a vapor deposition cover according to claim 1, wherein a conductive layer is formed on the base material, and the first through hole is formed by depositing the plating layer on the conductive layer. 如請求項1之蒸鍍罩之製造方法，其中準備上述支持體之步驟具有如下步驟：準備第1層及第2層；以及將上述第1層及上述第2層相互接合。 The manufacturing method of the vapor deposition cover of claim 1, wherein the step of preparing the support includes the steps of: preparing a first layer and a second layer; and bonding the first layer and the second layer to each other. 如請求項3之蒸鍍罩之製造方法，其中於將上述第1層及上述第2層相互接合之步驟中，上述第1層及上述第2層藉由接著劑、焊料或熔接相互接合。 The method for producing a vapor deposition cover according to claim 3, wherein in the step of bonding the first layer and the second layer to each other, the first layer and the second layer are bonded to each other by an adhesive, solder, or welding. 如請求項3之蒸鍍罩之製造方法，其中準備上述支持體之步驟於將上 述第1層及上述第2層相互接合之步驟後，進而具有利用金屬將上述第1層及上述第2層之接合面自側方覆蓋之步驟。 The method for manufacturing an evaporation cover according to claim 3, wherein the step of preparing the above-mentioned support is performed on the After the step of bonding the first layer and the second layer to each other, there is a step of covering the bonding surface of the first layer and the second layer from the side with a metal. 如請求項5之蒸鍍罩之製造方法，其中於利用上述金屬將上述第1層及上述第2層之接合面自側方覆蓋之步驟中，上述金屬係藉由鍍覆處理而形成。 The method for producing a vapor deposition cover according to claim 5, wherein in the step of covering the bonding surface of the first layer and the second layer from the side with the metal, the metal is formed by a plating process. 如請求項3之蒸鍍罩之製造方法，其中準備上述支持體之步驟進而具有如下步驟：準備第3層；以及將上述第2層及上述第3層相互接合。 The manufacturing method of the vapor deposition cover according to claim 3, wherein the step of preparing the support further includes the steps of: preparing a third layer; and bonding the second layer and the third layer to each other. 如請求項7之蒸鍍罩之製造方法，其中於將上述第2層及上述第3層相互接合之步驟中，上述第2層及上述第3層藉由接著劑、焊料或熔接相互接合。 The method for producing a vapor deposition cover according to claim 7, wherein in the step of bonding the second layer and the third layer to each other, the second layer and the third layer are bonded to each other by adhesive, solder, or welding. 如請求項7之蒸鍍罩之製造方法，其中準備上述支持體之步驟於將上述第2層及上述第3層相互接合之步驟之後，進而具有利用金屬將上述第2層及上述第3層之接合面自側方覆蓋之步驟。 The method for producing a vapor deposition cover according to claim 7, wherein the step of preparing the support is followed by the step of bonding the second layer and the third layer to each other, and further comprising bonding the second layer and the third layer with a metal. The step of covering the joint surface from the side. 如請求項9之蒸鍍罩之製造方法，其中於利用上述金屬將上述第2層及上述第3層之接合面自側方覆蓋之步驟中，上述金屬係藉由鍍覆處理而形成。 The method for producing a vapor deposition cover according to claim 9, wherein in the step of covering the bonding surfaces of the second layer and the third layer from the side with the metal, the metal is formed by a plating process. 一種蒸鍍罩裝置之製造方法，其具備如下步驟： 準備藉由如請求項1中任一項之蒸鍍罩之製造方法製造之蒸鍍罩；以及於上述蒸鍍罩之上述支持體安裝框架。 A manufacturing method of an evaporation cover device, which comprises the following steps: Prepare the vapor deposition cover manufactured by the manufacturing method of the vapor deposition cover according to any one of claim 1; and install the frame on the support body of the vapor deposition cover. 一種蒸鍍方法，其係使蒸鍍材料蒸鍍於基板之蒸鍍材料之蒸鍍方法，且具備如下步驟：準備藉由如請求項11之蒸鍍罩裝置之製造方法製造之蒸鍍罩裝置；準備上述基板；將上述基板設置於上述蒸鍍罩裝置之上述罩上；以及使上述蒸鍍材料蒸鍍於設置在上述罩上之上述基板。An evaporation method, which is an evaporation method of an evaporation material for evaporating an evaporation material on a substrate, and comprising the steps of: preparing an evaporation hood device manufactured by the method for manufacturing an evaporation hood device as claimed in claim 11 preparing the substrate; setting the substrate on the cover of the vapor deposition cover apparatus; and vapor-depositing the vapor deposition material on the substrate provided on the cover.
TW108126096A 2018-08-10 2019-07-24 Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method TWI773911B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-151870 2018-08-10
JP2018151870 2018-08-10

Publications (2)

Publication Number Publication Date
TW202033793A TW202033793A (en) 2020-09-16
TWI773911B true TWI773911B (en) 2022-08-11

Family

ID=69413746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108126096A TWI773911B (en) 2018-08-10 2019-07-24 Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method

Country Status (4)

Country Link
JP (1) JP7078118B2 (en)
CN (2) CN110819938B (en)
TW (1) TWI773911B (en)
WO (1) WO2020032149A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI773911B (en) * 2018-08-10 2022-08-11 日商大日本印刷股份有限公司 Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method
JP2021175824A (en) * 2020-03-13 2021-11-04 大日本印刷株式会社 Evaluation method of vapor deposition chamber of manufacturing apparatus of organic device, standard mask device and standard substrate used for evaluation method, manufacturing method of standard mask device, manufacturing apparatus of organic device having vapor deposition chamber evaluated by evaluation method, organic device having vapor-deposited layer formed in vapor deposition chamber evaluated by evaluation method, and maintenance method of vapor deposition chamber in manufacturing apparatus of organic device
JP2021155763A (en) * 2020-03-25 2021-10-07 株式会社ジャパンディスプレイ Method for manufacturing vapor deposition mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200504234A (en) * 2003-07-25 2005-02-01 Dainippon Screen Mfg Method for producing mask for evaporation and the mask for evaporation
WO2016111214A1 (en) * 2015-01-05 2016-07-14 シャープ株式会社 Deposition mask, deposition device, and deposition mask manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302457A (en) * 2004-04-09 2005-10-27 Toray Ind Inc Deposited mask and its forming method, and manufacturing method for organic electroluminescent equipment
JP4847081B2 (en) * 2005-09-20 2011-12-28 九州日立マクセル株式会社 Metal mask and manufacturing method thereof
JP6770708B2 (en) * 2015-09-17 2020-10-21 大日本印刷株式会社 Vapor deposition mask, manufacturing method of vapor deposition mask and manufacturing method of organic semiconductor element
JP6341434B2 (en) * 2016-03-29 2018-06-13 株式会社ブイ・テクノロジー Deposition mask, manufacturing method thereof, and repair method of deposition mask
JP6722512B2 (en) * 2016-05-23 2020-07-15 マクセルホールディングス株式会社 Evaporation mask and manufacturing method thereof
EP4148161A1 (en) * 2016-12-14 2023-03-15 Dai Nippon Printing Co., Ltd. Method of manufacturing vapor deposition mask device
TWI773911B (en) * 2018-08-10 2022-08-11 日商大日本印刷股份有限公司 Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200504234A (en) * 2003-07-25 2005-02-01 Dainippon Screen Mfg Method for producing mask for evaporation and the mask for evaporation
WO2016111214A1 (en) * 2015-01-05 2016-07-14 シャープ株式会社 Deposition mask, deposition device, and deposition mask manufacturing method

Also Published As

Publication number Publication date
CN110819938B (en) 2022-11-25
CN110819938A (en) 2020-02-21
WO2020032149A1 (en) 2020-02-13
TW202033793A (en) 2020-09-16
JP7078118B2 (en) 2022-05-31
CN210945753U (en) 2020-07-07
JPWO2020032149A1 (en) 2021-05-13

Similar Documents

Publication Publication Date Title
JP7121918B2 (en) Evaporation mask device and method for manufacturing evaporation mask device
TWI773911B (en) Vapor deposition hood, vapor deposition hood device, manufacturing method of vapor deposition hood, manufacturing method of vapor deposition hood device, and vapor deposition method
CN109207919B (en) Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask, and method for manufacturing vapor deposition mask device
WO2018110253A1 (en) Vapor deposition mask device and method for manufacturing vapor deposition mask device
TWI614354B (en) Deposition mask
TWI833876B (en) Evaporation cover and its manufacturing method, evaporation cover device and its manufacturing method, intermediates, evaporation method, and organic EL display device manufacturing method
US20200199733A1 (en) Deposition mask
JP2016148113A (en) Method of manufacturing vapor deposition mask, and vapor deposition mask
JP2017141500A (en) Vapor deposition mask, and production of vapor deposition mask
JP6701543B2 (en) Vapor deposition mask and method for manufacturing vapor deposition mask
JP2017186617A (en) Vapor deposition mask, and production method of vapor deposition mask
JP7406717B2 (en) vapor deposition mask
JP2017206732A (en) Vapor deposition mask welding method
JP6686549B2 (en) Method for manufacturing vapor deposition mask device and vapor deposition mask device
JP2018080377A (en) Vapor deposition mask, and production method of vapor deposition mask
JP2017057495A (en) Vapor deposition mask, method for manufacturing vapor deposition mask and method for manufacturing organic semiconductor element
TW202419649A (en) Evaporation mask and its manufacturing method, evaporation mask device and its manufacturing method, intermediate, evaporation method, and manufacturing method of organic EL display device
JP2020100876A (en) Vapor deposition mask device, vapor deposition mask, manufacturing method of vapor deposition mask device, and manufacturing method of vapor deposition mask