TWI614354B - Deposition mask - Google Patents
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- TWI614354B TWI614354B TW103112984A TW103112984A TWI614354B TW I614354 B TWI614354 B TW I614354B TW 103112984 A TW103112984 A TW 103112984A TW 103112984 A TW103112984 A TW 103112984A TW I614354 B TWI614354 B TW I614354B
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- forming mask
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
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Abstract
本發明係一種成膜遮罩，其係如下之成膜遮罩1，其具有於片狀之磁性金屬構件2之一面密接有樹脂製造之膜3的構造，該片狀之磁性金屬構件2具有並排地排列的狹縫狀之多個貫通孔5，且設置有上述各貫通孔5內之貫通上述膜3的部分之多個開口圖案6；上述膜3具有線膨脹係數於正交二軸不同之各向異性，使上述膜3之線膨脹係數小之軸與和上述磁性金屬構件2之上述貫通孔5之長軸交叉的方向一致。 The present invention is a film-forming mask, which is a film-forming mask 1 having a structure in which a resin-made film 3 is closely adhered to one surface of a sheet-shaped magnetic metal member 2, and the sheet-shaped magnetic metal member 2 has A plurality of slit-shaped through-holes 5 arranged side by side, and a plurality of opening patterns 6 in a part of each of the through-holes 5 penetrating the film 3 are provided; the film 3 has a linear expansion coefficient which is different in orthogonal two axes The anisotropy is such that the axis with a small linear expansion coefficient of the film 3 coincides with the direction crossing the major axis of the through hole 5 of the magnetic metal member 2.
Description
本發明係關於一種使磁性金屬構件與樹脂製膜密接之構造之複合型之成膜遮罩，尤其關於一種抑制熱變形而可實現成膜之薄膜圖案之高精細化的成膜遮罩。 The present invention relates to a composite film-forming mask having a structure in which a magnetic metal member and a resin film are closely adhered, and more particularly, to a film-forming mask capable of realizing high-definition film patterns by suppressing thermal deformation.
習知之成膜遮罩係使用抗蝕劑遮罩對板厚為30μm~100μm左右之金屬板進行濕式蝕刻，而形成有狹縫狀之開口圖案者(例如參照日本特開2009-129728號公報)。 Conventional film-forming masks use a resist mask to wet-etch a metal plate with a thickness of about 30 μm to 100 μm to form slit-shaped opening patterns (for example, refer to Japanese Patent Application Laid-Open No. 2009-129728). ).
然而，於此種習知之成膜遮罩中，對金屬板進行濕式蝕刻而形成有貫通該金屬板之多個開口圖案，因此會因濕式蝕刻之各向同性蝕刻而導致開口圖案之解像度變差，僅能形成板厚之數倍之開口寬度。 However, in such a conventional film-forming mask, a metal plate is wet-etched to form a plurality of opening patterns through the metal plate, so the resolution of the opening pattern may be caused by the isotropic etching of the wet etching. Deterioration can only form an opening width that is several times the plate thickness.
尤其，於使用線膨脹係數小至1×10-6/℃左右之鎳鋼(invar)作為金屬板時，鎳鋼難以進行濕式蝕刻，因此形成之開口圖案無法與有機EL用TFT基板之電極形狀一致地形成為矩形狀。因此，於將鎳鋼用作遮罩之基材時，通常，如上述專利文獻1所記載般，開口圖案多形成為細長之狹縫狀。 In particular, when nickel steel (invar) having a linear expansion coefficient as small as about 1 × 10 -6 / ° C is used as a metal plate, nickel steel is difficult to perform wet etching, so the formed opening pattern cannot be used with electrodes of TFT substrates for organic EL. The shape is uniformly formed into a rectangular shape. Therefore, when nickel steel is used as the base material of the mask, the opening pattern is usually formed in the shape of an elongated slit as described in Patent Document 1 described above.
而且，如圖6(a)所示，此種金屬之成膜遮罩1係藉由配 置於作為被成膜基板之基板17之背面的磁鐵15而被吸附，從而在保持密接於基板17之成膜面之狀態下使用。於該情形時，存在如下情況：作用於鎳鋼22之鄰接之開口圖案6間之細長狀之部分22a的磁通並非遍及成膜遮罩1之整個面相同，因此若為了提高密接力而使磁鐵15之磁場強度變強，則鎳鋼22之上述部分22a會沿與其長軸交叉之方向(X軸方向)移動，而使開口圖案6變形。因此，通常應用使強度減弱至不會使鎳鋼22之上述部分22a移動之程度的磁場(例如，20mT左右)。 Moreover, as shown in FIG. 6 (a), the film-forming mask 1 of such a metal is The magnet 15 placed on the back surface of the substrate 17 as the substrate to be formed is attracted, and is used while being kept in close contact with the film-forming surface of the substrate 17. In this case, there are cases in which the magnetic flux acting on the elongated portion 22a between the adjacent opening patterns 6 of the nickel steel 22 is not the same across the entire surface of the film-forming mask 1. Therefore, in order to improve the adhesion, The strength of the magnetic field of the magnet 15 becomes stronger, so that the above-mentioned portion 22a of the nickel steel 22 moves in a direction (X-axis direction) that intersects its long axis, thereby deforming the opening pattern 6. Therefore, a magnetic field (for example, about 20 mT) that weakens the strength to such an extent that the aforementioned portion 22a of the nickel steel 22 does not move is usually applied.
另一方面，如圖6(b)所示，於將上述成膜遮罩1應用於一面使作為成膜源之蒸鍍源20沿與狹縫狀之開口圖案6之長軸(Y軸)交叉之方向(X軸方向)移動一面進行蒸鍍的作為成膜裝置之蒸鍍裝置時，藉由蒸鍍源20之輻射熱而僅加熱成膜遮罩1之與蒸鍍源20對向之部分。尤其，該部分之鎳鋼22薄且細長，因而與基板17相比熱容量小。因此，鎳鋼22之鄰接之開口圖案6間之細長狀之部分22a熱膨脹而沿其長軸方向(Y軸方向)延伸。 On the other hand, as shown in FIG. 6 (b), the film-forming mask 1 is applied to one side so that the evaporation source 20 as a film-forming source is along the long axis (Y-axis) of the slit-shaped opening pattern 6. When the vapor deposition device is a film-forming device that is moved in the direction of intersection (X-axis direction) and vapor-deposited, only the portion of the film-forming mask 1 opposed to the vapor deposition source 20 is heated by the radiant heat of the vapor deposition source 20 . In particular, the nickel steel 22 in this portion is thin and slender, and thus has a smaller heat capacity than the substrate 17. Therefore, the elongated portion 22a between the adjacent opening patterns 6 of the nickel steel 22 is thermally expanded to extend in the long axis direction (Y-axis direction).
如上所述，由於無法對上述成膜遮罩1作用強度強之磁場，因此磁鐵15所產生之對鎳鋼22之約束力弱。因此，由蒸鍍源20加熱而延伸之鎳鋼22之上述部分22a係如圖6(b)所示，自基板17之蒸鍍面剝落而垂下，於鎳鋼22之該部分22a之背面與基板17之蒸鍍面之間產生間隙23。因此，存在因自蒸鍍源20蒸發之蒸鍍材料M之流回而使薄膜圖案21之邊緣模糊、或形狀擴大的問題。尤其，薄膜圖案21越高精細則越無法忽視該問題，其亦成為限制高精細化之一個重要原因。 As described above, since a strong magnetic field cannot be applied to the film-forming mask 1, the binding force of the nickel steel 22 generated by the magnet 15 is weak. Therefore, as shown in FIG. 6 (b), the above portion 22a of the nickel steel 22 extended and heated by the evaporation source 20 is peeled off from the vapor deposition surface of the substrate 17 and hangs down. A gap 23 is formed between the vapor deposition surfaces of the substrate 17. Therefore, there is a problem that the edges of the thin film pattern 21 are blurred or the shape is enlarged due to the return of the vapor deposition material M evaporated from the vapor deposition source 20. In particular, the higher the fineness of the thin film pattern 21, the more this problem cannot be ignored, and it also becomes an important reason for limiting high definition.
因此，本發明之目的在於應對此種問題點，提供一種抑制熱變形而可實現成膜之薄膜圖案之高精細化的成膜遮罩。 Therefore, an object of the present invention is to provide a film-forming mask capable of realizing high-definition film patterns while suppressing thermal deformation while coping with such problems.
為了達成上述目的，本發明之成膜遮罩具有於片狀之磁性金屬構件之一面密接有樹脂製造之膜的構造，該片狀之磁性金屬構件具有並排地排列的狹縫狀之多個貫通孔，且設置有於上述各貫通孔內之貫通上述膜的部分之多個開口圖案，上述膜具有線膨脹係數於正交二軸不同之各向異性，使上述膜之線膨脹係數小之軸與和上述磁性金屬構件之上述貫通孔之長軸交叉的方向一致。 In order to achieve the above object, the film-forming mask of the present invention has a structure in which a resin-made film is closely adhered to one surface of a sheet-shaped magnetic metal member, and the sheet-shaped magnetic metal member has a plurality of slit-shaped through holes arranged side by side Holes, and a plurality of opening patterns are provided in the through-holes through the film, and the film has an anisotropy in which the linear expansion coefficient is different from the orthogonal two axes, so that the linear expansion coefficient of the film is small. It coincides with the direction which intersects with the long axis of the said through-hole of the said magnetic metal member.
根據本發明，磁性金屬構件之鄰接之貫通孔間之細長狀的部分係與其長軸交叉之方向上介隔膜相互連接而該方向之移動受到限制，因此即便為了吸附磁性金屬構件使遮罩密接於基板而使配置於基板之背面之磁鐵之磁場強度較習知變強，亦無磁性金屬構件之上述部分移動之虞。因此，藉由使磁鐵之磁場強度變強，增加對於磁性金屬構件之吸附力，而即便磁性金屬構件藉由成膜源之輻射熱被部分地加熱而延伸，亦可防止磁性金屬構件之上述部分自基板面剝落而垂下。因此，可抑制於遮罩與基板之間產生間隙，導致自成膜源到來之成膜材料向遮罩背面側流回，從而可抑制薄膜圖案之邊緣模糊、或形狀擴大。因此，即便薄膜圖案之高精細化進步亦可容易地應對。 According to the present invention, the slender portion between the adjacent through holes of the magnetic metal member is connected to the dielectric diaphragm in a direction intersecting with its long axis, and the movement in that direction is restricted. Therefore, even if the shield is tightly attached to the magnetic metal member for adsorption The substrate makes the magnetic field strength of the magnet disposed on the back of the substrate stronger than conventional, and there is no risk that the above-mentioned part of the magnetic metal member moves. Therefore, by making the magnetic field strength of the magnet stronger and increasing the adsorption force on the magnetic metal member, even if the magnetic metal member is partially heated and extended by the radiant heat of the film-forming source, the above-mentioned part of the magnetic metal member can be prevented from self-propagating. The substrate surface peels off and hangs down. Therefore, generation of a gap between the mask and the substrate can be suppressed, and the film-forming material arriving from the film-forming source can flow back to the back side of the mask, thereby suppressing blurring of the edges of the film pattern or expansion of the shape. Therefore, it is easy to cope with even the progress of high-definition thin film patterns.
又，由於膜於線膨脹係數具有各向異性，且使上述薄膜之線膨脹係數小之軸與和磁性金屬構件之貫通孔之長軸交叉的方向一致，因此可抑制膜向該方向之延伸(熱變形)，從而可抑制開口圖案向該方向之位 置偏移及形狀擴大。因此，藉此亦可應對薄膜圖案之高精細化。 In addition, since the film has anisotropy in the coefficient of linear expansion, and the axis where the coefficient of linear expansion of the film is small coincides with the direction intersecting with the major axis of the through hole of the magnetic metal member, it is possible to suppress the film from extending in that direction ( Thermal deformation), thereby suppressing the opening pattern in that direction Offset and shape enlargement. Therefore, it is possible to cope with the high definition of the thin film pattern.
1‧‧‧成膜遮罩 1‧‧‧ film forming mask
2‧‧‧磁性金屬構件 2‧‧‧ magnetic metal components
2a、22a‧‧‧細長狀之部分 2a, 22a ‧‧‧ slender parts
3‧‧‧膜 3‧‧‧ film
3a、3b‧‧‧面 3a, 3b‧‧‧face
4‧‧‧框架 4‧‧‧frame
5‧‧‧貫通孔 5‧‧‧through hole
6‧‧‧開口圖案 6‧‧‧ opening pattern
6a‧‧‧開口端緣部 6a‧‧‧Open end edge
7‧‧‧開口 7‧‧‧ opening
8‧‧‧籽晶層 8‧‧‧ seed layer
9‧‧‧抗蝕劑層 9‧‧‧ resist layer
10‧‧‧島圖案 10‧‧‧ Island pattern
11‧‧‧開口部 11‧‧‧ opening
12‧‧‧遮罩用構件 12‧‧‧Mask members
13‧‧‧XY平台 13‧‧‧XY platform
14‧‧‧玻璃板 14‧‧‧ glass plate
15‧‧‧磁鐵 15‧‧‧magnet
16‧‧‧液體 16‧‧‧ Liquid
17‧‧‧基板 17‧‧‧ substrate
18‧‧‧側壁 18‧‧‧ sidewall
19‧‧‧基板保持器 19‧‧‧ substrate holder
20‧‧‧蒸鍍源 20‧‧‧Evaporation source
21‧‧‧薄膜圖案 21‧‧‧ film pattern
22‧‧‧鎳鋼 22‧‧‧ Nickel steel
23‧‧‧間隙 23‧‧‧ Clearance
L‧‧‧雷射光 L‧‧‧ laser light
M‧‧‧蒸鍍材料 M‧‧‧Evaporation material
圖1係表示本發明之成膜遮罩之一實施形態之圖，(a)係俯視圖，(b)係(a)之主要部分放大剖面圖。 FIG. 1 is a view showing an embodiment of a film-forming mask of the present invention, (a) is a plan view, and (b) is an enlarged sectional view of a main part.
圖2係表示本發明之成膜遮罩之製造之圖，且係對遮罩用構件之製作步驟進行說明之剖面圖。 FIG. 2 is a cross-sectional view showing the production of a film-forming mask according to the present invention, and explaining the manufacturing steps of the mask member.
圖3係表示本發明之成膜遮罩之製造之圖，且係對框架接合步驟進行說明之剖面圖。 FIG. 3 is a cross-sectional view showing the production of a film-forming mask according to the present invention and explaining a frame joining process.
圖4係表示本發明之成膜遮罩之製造之圖，且係對開口圖案形成步驟進行說明之剖面圖。 FIG. 4 is a cross-sectional view showing the production of a film-forming mask according to the present invention, and illustrating a step of forming an opening pattern.
圖5係對使用本發明之成膜遮罩進行之成膜進行說明的剖面圖。 FIG. 5 is a cross-sectional view illustrating film formation using the film formation mask of the present invention.
圖6係對使用習知之金屬遮罩進行之成膜進行說明的剖面圖。 FIG. 6 is a cross-sectional view illustrating film formation using a conventional metal mask.
以下，基於隨附圖式對本發明之實施形態進行詳細說明。圖1係表示本發明之成膜遮罩之一實施形態之圖，(a)係俯視圖，(b)係(a)之主要部分放大剖面圖。該成膜遮罩1具有使磁性金屬構件與樹脂製膜密接之構造，且係具備磁性金屬構件2、樹脂製膜3、及框架4而構成。 Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings. FIG. 1 is a view showing an embodiment of a film-forming mask of the present invention, (a) is a plan view, and (b) is an enlarged sectional view of a main part. This film-forming mask 1 has a structure in which a magnetic metal member and a resin film are in close contact with each other, and includes a magnetic metal member 2, a resin film 3, and a frame 4.
上述磁性金屬構件2係用以保持下述膜3，並且藉由配置於被成膜基板(以下簡稱為「基板」)之背面之磁鐵(例如電磁鐵)而被吸附，於與基板之間夾著上述膜3而使該膜3密接於基板之成膜面，且為具有與 作為基板之例如玻璃基板之線膨脹係數(例如5×10-6/℃)近似之線膨脹係數的例如Fe-Ni系合金、Fe-Ni-Co系合金等之片狀構件。而且，以預先規定之特定間隔並排地排列而具有細長之狹縫狀之多個貫通孔5。 The magnetic metal member 2 is used to hold the film 3 described below, and is attracted by a magnet (for example, an electromagnet) disposed on the back surface of a substrate to be formed (hereinafter referred to simply as a "substrate") and sandwiched between the substrate and the substrate. The above-mentioned film 3 is adhered to the film-forming surface of the substrate, and has a coefficient of linear expansion similar to that of a glass substrate such as a glass substrate (for example, 5 × 10 -6 / ° C). Sheet-like members such as Ni-based alloys and Fe-Ni-Co-based alloys. Furthermore, the plurality of through holes 5 having an elongated slit shape are arranged side by side at predetermined predetermined intervals.
於上述磁性金屬構件2之一面，密接地設置有使可見光通過之樹脂製之膜3。該膜3係成為遮罩之本體部者，具有線膨脹係數於正交二軸(X軸、Y軸)不同之各向異性，且使線膨脹係數小之軸(X軸)與和上述磁性金屬構件2之貫通孔5之長軸交叉的方向一致。於該情形時，選擇如下之樹脂膜，即，該樹脂膜之上述線膨脹係數小之軸(X軸)方向之線膨脹係數係與磁性金屬構件2之線膨脹係數一致地，例如於50℃~200℃之溫度範圍內為4×10-6/℃~5×10-6/℃。作為此種樹脂膜，具體而言，例如有東麗杜邦股份有限公司製造之聚醯亞胺膜Kapton(美國杜邦公司之註冊商標)150EN-A。 A resin film 3 is provided on one surface of the magnetic metal member 2 to allow visible light to pass therethrough. The film 3 is the body of the mask, and has an anisotropy in which the coefficient of linear expansion is different from the orthogonal two axes (X-axis, Y-axis), and the axis (X-axis) that makes the coefficient of linear expansion small and the above magnetic properties. The directions in which the major axes of the through holes 5 of the metal member 2 intersect are the same. In this case, a resin film is selected, that is, the linear expansion coefficient in the axis (X-axis) direction of the small linear expansion coefficient of the resin film is consistent with the linear expansion coefficient of the magnetic metal member 2, for example, at 50 ° C. The temperature range of ~ 200 ℃ is 4 × 10 -6 / ℃ ~ 5 × 10 -6 / ℃. As such a resin film, for example, a polyimide film Kapton (registered trademark of American DuPont) 150EN-A manufactured by Toray DuPont Co., Ltd. is specifically mentioned.
於上述磁性金屬構件2之各貫通孔5內，與貫通孔5之長軸方向並排地設置有貫通膜3之多個開口圖案6。該開口圖案6係用以使自作為成膜源之例如蒸鍍源蒸發之成膜材料選擇性地通過，於基板上形成固定形狀之薄膜圖案，因此例如係形成為與有機EL用TFT基板之陽極電極相同之形狀大小。或，亦可形成為橫跨與相同顏色對應之多個陽極電極的大小。 In each of the through holes 5 of the magnetic metal member 2, a plurality of opening patterns 6 of the through film 3 are provided side by side with the long axis direction of the through holes 5. The opening pattern 6 is used to selectively pass a film-forming material which is a film-forming source, such as an evaporation source, to form a fixed-shape thin-film pattern on a substrate. Therefore, for example, the opening pattern 6 is formed with a TFT substrate for an organic EL. The anode electrodes have the same shape and size. Alternatively, it may be formed in a size across a plurality of anode electrodes corresponding to the same color.
於上述磁性金屬構件2之周緣部接合而設置有框架4。該框架4以鋪展之狀態支持磁性金屬構件2與膜3之複合片材，因此係具有內含有上述多個貫通孔5之大小之開口7的框狀之構件，且係由與磁性金屬構件2相同之金屬材料或具有近似之線膨脹係數之金屬材料形成。再者，磁性金屬構件2與框架4之接合亦可使用接著劑進行，但有因成膜時之熱 所產生之逸氣而污染薄膜圖案之虞，因此較理想為焊接。 A frame 4 is provided on the peripheral edge portion of the magnetic metal member 2. The frame 4 supports the composite sheet of the magnetic metal member 2 and the film 3 in a spread state, and therefore is a frame-shaped member having the openings 7 having the size of the plurality of through holes 5 described above, and is made of the magnetic metal member 2 The same metal material or a metal material having an approximate linear expansion coefficient is formed. In addition, the bonding of the magnetic metal member 2 and the frame 4 can also be performed using an adhesive, but there is heat due to film formation. The generated outgas may contaminate the thin film pattern, so it is preferable to be soldered.
其次，對以此種方式構成之成膜遮罩1之製造進行說明。本發明之成膜遮罩1大致係經過遮罩用構件之形成步驟、框架接合步驟及開口圖案形成步驟而製造。首先，參照圖2對遮罩用構件之形成步驟進行說明。 Next, the manufacture of the film-forming mask 1 comprised in this way is demonstrated. The film-forming mask 1 of the present invention is generally manufactured through a mask forming step, a frame bonding step, and an opening pattern forming step. First, a step of forming a mask member will be described with reference to FIG. 2.
首先，如圖2(a)所示，裁斷線膨脹係數於正交二軸不同而具有各向異性之厚度為10μm~30μm左右且為長條的例如聚醯亞胺膜，製作固定面積之膜3。 First, as shown in FIG. 2 (a), the linear expansion coefficient of cutting is different from the orthogonal two-axis and has an anisotropic thickness of about 10 μm to 30 μm and is a long film such as a polyimide film, and a film having a fixed area is produced. 3.
上述聚醯亞胺膜例如為東麗杜邦股份有限公司製造之Kapton(註冊商標)150EN-A。該聚醯亞胺膜之長度方向(機械搬送方向，相當於圖1之Y軸方向)之線膨脹係數為12×10-6/℃，寬度方向(相當於圖1之X軸方向)之線膨脹係數為5×10-6/℃，係藉由一面施加預先規定之特定溫度一面沿寬度方向延伸而製造。 The polyimide film is, for example, Kapton (registered trademark) 150EN-A manufactured by Toray DuPont Co., Ltd. The linear expansion coefficient of the polyimide film in the longitudinal direction (mechanical conveying direction, corresponding to the Y-axis direction in FIG. 1) is 12 × 10 -6 / ° C, and the line in the width direction (corresponding to the X-axis direction in FIG. 1). The expansion coefficient is 5 × 10 -6 / ° C, and it is manufactured by extending in the width direction while applying a predetermined specific temperature in advance.
其次，如圖2(b)所示，藉由蒸鍍、濺鍍或無電電鍍等眾所周知之成膜技術，以50nm左右之厚度於上述膜3之一面形成由良導電性之金屬膜構成之籽晶層8。於該情形時，於膜3如上所述為聚醯亞胺時，較佳為使用鎳等作為籽晶層8。由於銅會於聚醯亞胺內擴散，因此作為對於聚醯亞胺之籽晶層8欠佳。 Next, as shown in FIG. 2 (b), a seed crystal composed of a highly conductive metal film is formed on one surface of the film 3 with a thickness of about 50 nm by a well-known film-forming technology such as evaporation, sputtering, or electroless plating. Layer 8. In this case, when the film 3 is polyimide as described above, it is preferable to use nickel or the like as the seed layer 8. Since copper diffuses in polyimide, it is not good as a seed layer 8 for polyimide.
繼而，圖2(c)所示，於膜3之籽晶層8上以30μm~50μm之厚度例如噴霧塗佈光阻劑後，使其乾燥而形成抗蝕劑層9。 Next, as shown in FIG. 2 (c), a photoresist is spray-coated on the seed layer 8 of the film 3 at a thickness of 30 μm to 50 μm, for example, and then dried to form a resist layer 9.
繼而，如圖2(d)所示，使用光罩對抗蝕劑層9進行曝光及顯影，與細長之狹縫狀之多個貫通孔5之形成位置對應地形成與該貫通 孔5形狀尺寸相同之多個島圖案10。於該情形時，狹縫狀之貫通孔5於與膜3之熱膨脹係數小之軸(X軸)方向交叉之方向(Y軸方向)上具有長軸，因此島圖案10係沿Y軸方向形成為細長。又，同時，於內含有多個島圖案10之成膜有效區域外之部分，於預先規定之特定位置亦形成省略圖示之對準標記用島圖案。 Next, as shown in FIG. 2 (d), the resist layer 9 is exposed and developed using a photomask, and the through-holes are formed corresponding to the formation positions of the plurality of elongated slit-shaped through-holes 5 corresponding to the through-holes. The plurality of island patterns 10 having the same shape and size of the holes 5. In this case, the slit-shaped through hole 5 has a long axis in a direction (Y-axis direction) that intersects with the axis (X-axis) direction of the small thermal expansion coefficient of the film 3, so the island pattern 10 is formed along the Y-axis direction It is slender. At the same time, an island pattern for alignment marks (not shown) is also formed at a predetermined position in a portion outside the film-forming effective region containing a plurality of island patterns 10 therein.
其次，將膜3浸漬於鍍浴中，如圖2(e)所示，於上述島圖案10之外側之籽晶層8上，以30μm~50μm之厚度形成線膨脹係數為例如5×10-6/℃左右之例如Fe-Ni系合金、Fe-Ni-Co系合金等作為磁性金屬構件2。於該情形時，使用之鍍浴係根據欲形成之磁性金屬構件2而自眾所周知之鍍浴中適當選擇。其後，如該圖(f)所示，使用有機溶劑或上述抗蝕劑專用之剝離劑而剝離島圖案10，於與該島圖案10對應之位置形成開口部11。 Next, the membrane was immersed in the plating bath 3, FIG. 2 (e), the island on the outside of the pattern 10 above the seed layer 8, a thickness of 30μm ~ 50μm is formed of, for example, linear expansion coefficient of 5 × 10 - At about 6 / ° C, for example, a Fe-Ni-based alloy, a Fe-Ni-Co-based alloy, or the like is used as the magnetic metal member 2. In this case, the plating bath to be used is appropriately selected from well-known plating baths in accordance with the magnetic metal member 2 to be formed. Thereafter, as shown in FIG. 5 (f), the island pattern 10 is peeled off using an organic solvent or a release agent for the above-mentioned resist, and an opening portion 11 is formed at a position corresponding to the island pattern 10.
繼而，使膜3通過籽晶層8之蝕刻液中，如圖2(g)所示，蝕刻並去除上述開口部11內之籽晶層8而形成貫通孔5。進而，洗淨膜3而獲得遮罩用構件12。 Then, as shown in FIG. 2 (g), the film 3 is passed through the etching solution of the seed layer 8, and the seed layer 8 in the opening 11 is etched and removed to form a through hole 5. Further, the film 3 is washed to obtain a mask member 12.
其次，參照圖3對框架接合步驟進行說明。 Next, the frame joining process will be described with reference to FIG. 3.
首先，如圖3(a)所示，以沿X軸、Y軸方向施加有固定之張力之狀態將上述遮罩用構件12鋪展於框狀之框架4，如該圖(b)所示，對遮罩用構件12之周緣部照射雷射光L而焊接磁性金屬構件2與框架4。 First, as shown in FIG. 3 (a), the masking member 12 is spread on the frame-like frame 4 in a state where a fixed tension is applied in the X-axis and Y-axis directions. As shown in FIG. 3 (b), The peripheral portion of the mask member 12 is irradiated with laser light L to weld the magnetic metal member 2 and the frame 4.
繼而，參照圖4對開口圖案形成步驟進行說明。 Next, the opening pattern forming step will be described with reference to FIG. 4.
首先，如圖4(a)所示，使膜3為下側而將遮罩用構件12載置於雷射加工裝置之XY平台13上。該XY平台13具有以玻璃板14之 正面作為載置面，且於玻璃板14之背面側配置有磁鐵15(例如電磁鐵)的構造，且構成為可沿X軸及Y軸方向移動。因此，遮罩用構件12係藉由上述磁鐵15而吸附磁性金屬構件2從而密接固定於玻璃板14。此時，較佳為如該圖所示，於玻璃板14上塗佈例如乙醇等液體16，藉由液體16之表面張力而使膜3密接於玻璃板14上。 First, as shown in FIG. 4 (a), the film 3 is placed on the lower side, and the mask member 12 is placed on the XY stage 13 of the laser processing apparatus. The XY stage 13 has a glass plate 14 The front surface serves as a mounting surface, and a magnet 15 (for example, an electromagnet) is arranged on the back side of the glass plate 14, and is configured to be movable in the X-axis and Y-axis directions. Therefore, the mask member 12 is adhered and fixed to the glass plate 14 by attracting the magnetic metal member 2 with the magnet 15. At this time, it is preferable to apply a liquid 16 such as ethanol to the glass plate 14 as shown in the figure, and make the film 3 adhere to the glass plate 14 by the surface tension of the liquid 16.
其次，如圖4(b)所示，形成開口圖案6。詳細而言，開口圖案6係一面使XY平台13以預先規定之特定間距沿XY方向步進移動，一面藉由省略圖示之雷射照射裝置而使例如波長為355nm之雷射光L聚光於磁性金屬構件2之貫通孔5內之膜3上，對膜3進行雷射剝蝕而形成。此時，聚光之雷射光L之焦點上之剖面形狀係以與開口圖案6成為相同形狀大小之方式而調整形狀。因此，若以使雷射光L之焦點位置與膜3之下表面之位置一致之方式適當地控制焦點高度位置，則可與設計一致地對開口圖案6之與磁性金屬構件2為相反側之開口端之形狀進行最後加工。因此，如圖5所示，若將與磁性金屬構件2為相反側之膜3之面3a設為與基板17之密接面，則可蒸鍍形成與設計一致之大小之薄膜圖案21。再者，雷射光L之波長並不限定於355nm，只要可對樹脂膜3進行剝蝕加工，則亦可為266nm、254nm或其以下。 Next, as shown in FIG. 4 (b), an opening pattern 6 is formed. In detail, the opening pattern 6 moves the XY stage 13 along the XY direction at a predetermined predetermined pitch while focusing the laser light L having a wavelength of 355 nm on a laser irradiation device (not shown), for example. The film 3 is formed on the film 3 in the through hole 5 of the magnetic metal member 2 by laser ablation. At this time, the cross-sectional shape at the focal point of the focused laser light L is adjusted so that the shape becomes the same shape and size as the opening pattern 6. Therefore, if the focal height position is appropriately controlled so that the focal position of the laser light L coincides with the position of the lower surface of the film 3, the opening of the opening pattern 6 on the side opposite to the magnetic metal member 2 can be consistent with the design. The end shape is finished. Therefore, as shown in FIG. 5, if the surface 3 a of the film 3 on the opposite side to the magnetic metal member 2 is set as a close contact surface with the substrate 17, a thin film pattern 21 having a size consistent with the design can be formed by vapor deposition. In addition, the wavelength of the laser light L is not limited to 355 nm, and may be 266 nm, 254 nm or less as long as the resin film 3 can be subjected to an ablation process.
又，若一面使雷射光L之焦點之高度位置自膜3之磁性金屬構件2側之面朝向其相反側之面3a緩緩下降，一面以多次照射形成開口圖案6，則可如圖1(b)所示，以開口面積自膜3之磁性金屬構件2側之面3b朝向其相反側之面3a而暫時變窄之方式，於側壁18賦予楔形而形成開口圖案6。此時，若使開口圖案6之側壁18之楔形角度與成膜材料之分子 相對於遮罩面之最大入射角度(成為遮罩面之法線之角度)一致地，形成為例如20°~50°，則可更有效地防止膜3之磁性金屬構件2側之開口圖案6的開口端緣部6a成為成膜之死角。 In addition, if the height position of the focal point of the laser light L is gradually lowered from the side of the magnetic metal member 2 side of the film 3 toward the side 3a on the opposite side, and the opening pattern 6 is formed by multiple irradiations on one side, as shown in FIG. 1 As shown in (b), the opening pattern 6 is formed by providing a wedge shape to the side wall 18 so that the opening area temporarily narrows from the surface 3b on the magnetic metal member 2 side of the film 3 toward the surface 3a on the opposite side. At this time, if the wedge angle of the side wall 18 of the opening pattern 6 and the molecule of the film forming material are made When the maximum incident angle (the angle that becomes the normal to the mask surface) with respect to the mask surface is uniformly formed at, for example, 20 ° to 50 °, the opening pattern 6 on the magnetic metal member 2 side of the film 3 can be more effectively prevented The opening end edge portion 6a becomes a dead angle of film formation.
再者，於開口圖案形成步驟中，亦於對多個開口圖案6中任一開口圖案6之座標位置而預先規定之座標位置、即磁性金屬構件2之對準標記用貫通孔內之膜3，形成用以進行與基板17之對準的貫通之省略圖示之對準標記。 Furthermore, in the opening pattern forming step, a predetermined coordinate position for the coordinate position of any one of the opening patterns 6 in the plurality of opening patterns 6 is also defined, that is, the film 3 in the through hole for the alignment mark of the magnetic metal member 2. An alignment mark (not shown) for forming a penetration with the substrate 17 is formed.
其次，對使用本發明之成膜遮罩1進行之薄膜圖案21之形成進行說明。此處，作為一例，對成膜裝置為蒸鍍裝置之情形進行說明。 Next, the formation of the thin film pattern 21 using the film-forming mask 1 of the present invention will be described. Here, as an example, the case where a film-forming apparatus is a vapor deposition apparatus is demonstrated.
首先，如圖5(a)所示，於在背面配置有磁鐵15(例如電磁鐵)之狀態下將基板17保持於基板保持器19。 First, as shown in FIG. 5 (a), the substrate 17 is held on the substrate holder 19 in a state where a magnet 15 (for example, an electromagnet) is disposed on the back surface.
繼而，使膜3之面3a與基板17之蒸鍍面對向而配置成膜遮罩1，使用預先設置於基板17及成膜遮罩1之對準標記而使兩者對準。然後，於兩者對準之狀態下，藉由磁鐵15之磁力而吸附成膜遮罩1之磁性金屬構件2，將成膜遮罩1密接固定於基板17之蒸鍍面。此時，如圖1(a)所示，磁性金屬構件2之位於鄰接之貫通孔5之間的細長狀之部分2a係介隔膜3於X軸方向上相互連接而該方向之移動受到限制，因此即便使磁鐵15之磁場強度較習知更強，磁性金屬構件2之上述部分2a亦不會移動。因此，於本實施形態中，將磁鐵15之磁場強度設定為較習知強10倍之200mT。 Next, the film mask 1 is arranged with the surface 3 a of the film 3 and the vapor deposition surface of the substrate 17 facing each other, and the two are aligned using an alignment mark provided in advance on the substrate 17 and the film formation mask 1. Then, in a state where the two are aligned, the magnetic metal member 2 of the film-forming mask 1 is adsorbed by the magnetic force of the magnet 15, and the film-forming mask 1 is tightly fixed to the vapor deposition surface of the substrate 17. At this time, as shown in FIG. 1 (a), the elongated portions 2a of the magnetic metal member 2 located between the adjacent through holes 5 are connected to each other in the X-axis direction of the dielectric diaphragm 3, and movement in that direction is restricted. Therefore, even if the magnetic field strength of the magnet 15 is made stronger than conventional, the above-mentioned portion 2a of the magnetic metal member 2 will not move. Therefore, in this embodiment, the magnetic field strength of the magnet 15 is set to 200 mT which is 10 times stronger than the conventional one.
一體地保持基板17及成膜遮罩1之基板保持器19係如圖5(b)所示，將基板17之蒸鍍面側向下安裝於蒸鍍裝置之真空槽內之基板安裝部。 As shown in FIG. 5 (b), the substrate holder 19 that integrally holds the substrate 17 and the film-forming mask 1 is a substrate mounting portion in which a vapor deposition surface side of the substrate 17 is mounted downward in a vacuum tank of a vapor deposition apparatus.
此處使用之蒸鍍裝置係與成膜遮罩1之狹縫狀之貫通孔5 對應地，於其長軸(Y軸)方向具備具有長坩堝之蒸鍍源20，且構成為該蒸鍍源20可沿與上述貫通孔5之長軸(Y軸)交叉之方向(X軸方向)移動。 The vapor deposition device used here is a slit-shaped through hole 5 with the film-forming mask 1 Correspondingly, a vapor deposition source 20 having a long crucible is provided in a long axis (Y axis) direction, and the vapor deposition source 20 is configured to be capable of intersecting the long axis (Y axis) of the through hole 5 (X axis). Direction).
因此，對基板17之蒸鍍係如圖5(b)所示，一面使蒸鍍源20沿X軸方向以固定速度移動，一面經由於移動中之各時點下位於蒸鍍源20之正上方之成膜遮罩1的開口圖案6而進行。因此，與習知技術同樣地，於移動中之各時點下位於蒸鍍源20之正上方之成膜遮罩1之一部分係藉由蒸鍍源20之輻射熱而加熱。 Therefore, as shown in FIG. 5 (b), the deposition system on the substrate 17 moves the evaporation source 20 at a fixed speed along the X-axis direction, and is located directly above the evaporation source 20 at each time point during the movement. The opening pattern 6 of the mask 1 is formed. Therefore, as in the conventional technique, a part of the film-forming mask 1 located directly above the evaporation source 20 at each time point during the movement is heated by the radiant heat of the evaporation source 20.
然而，與習知技術不同，於本實施形態中，磁鐵15之磁場強度係設定為較習知強10倍之200mT，因此成膜遮罩1係藉由磁鐵15之強磁力而吸附於基板17，無磁性金屬構件2之位於鄰接之貫通孔5之間的細長狀之部分2a延伸而自基板17剝離、垂下之虞。因此，不會於成膜遮罩1與基板17之間產生間隙，抑制自蒸鍍源20蒸發之蒸鍍材料M向遮罩背面側之流回，從而無薄膜圖案21之邊緣模糊、或形狀擴大之虞。 However, unlike the conventional technique, in this embodiment, the magnetic field strength of the magnet 15 is set to 200mT which is 10 times stronger than the conventional one. Therefore, the film-forming mask 1 is adsorbed on the substrate 17 by the strong magnetic force of the magnet 15 without The elongated portion 2 a of the magnetic metal member 2 located between the adjacent through-holes 5 extends to peel off from the substrate 17 and hang down. Therefore, a gap is not generated between the film-forming mask 1 and the substrate 17, and the evaporation material M evaporated from the evaporation source 20 is prevented from flowing back to the mask back side, so that the edge of the thin film pattern 21 is not blurred or the shape The risk of expansion.
又，使用之膜3具有線膨脹係數於正交二軸不同之各向異性，且使膜3之線膨脹係數小之軸與和磁性金屬構件2之貫通孔5之長軸交叉的方向(X軸方向)一致，因此抑制膜3向X軸方向之延伸，從而抑制開口圖案6向該方向之位置偏移及形狀擴大。因此，即便例如於有機EL用TFT基板中像素間距窄之高精細化進步，亦可避免於鄰接之像素附著其他顏色之有機EL材料。 In addition, the used film 3 has an anisotropy in which the linear expansion coefficient is different from the orthogonal two axes, and the direction in which the axis with the small linear expansion coefficient of the film 3 intersects with the long axis of the through hole 5 of the magnetic metal member 2 (X The axial direction) is consistent, so that the extension of the film 3 in the X-axis direction is suppressed, so that the positional deviation of the opening pattern 6 in this direction and the expansion of the shape are suppressed. Therefore, even if, for example, the pixel pitch in the organic EL TFT substrate is narrowed and high-definition is improved, it is possible to avoid attaching organic EL materials of other colors to adjacent pixels.
進而，由於使磁性金屬構件2之線膨脹係數、及膜3之X軸方向之線膨脹係數與基板17之線膨脹係數一致，因此基板17、磁性金屬構 件2及膜3向X軸方向之變形量大致相同，從而可抑制形成於基板17上之薄膜圖案21向X軸方向之位置偏移。再者，向Y軸方向之位置偏移例如於有機EL用TFT基板之情形時為相同顏色間之位置偏移，因此不會成為問題。 Furthermore, since the linear expansion coefficient of the magnetic metal member 2 and the linear expansion coefficient of the X-axis direction of the film 3 are made to coincide with the linear expansion coefficient of the substrate 17, the substrate 17, the magnetic metal structure The deformation amount of the element 2 and the film 3 in the X-axis direction is substantially the same, so that the positional deviation of the thin-film pattern 21 formed on the substrate 17 in the X-axis direction can be suppressed. In addition, the positional shift in the Y-axis direction is, for example, a positional shift between the same colors in the case of a TFT substrate for an organic EL, and therefore it is not a problem.
再者，於上述實施形態中，對成膜遮罩1具備框架4之情形進行了說明，但本發明並不限定於此，亦可不具備框架4。於該情形時，較佳為將片狀之成膜遮罩1以藉由固定之張力拉伸其四方之狀態設置於基板17上，於進行基板17與成膜遮罩1之對準後，藉由磁鐵15吸附磁性金屬構件2而使成膜遮罩1密接於基板17。 In addition, although the case where the film-forming mask 1 is equipped with the frame 4 was demonstrated in the said embodiment, this invention is not limited to this, The frame 4 may not be provided. In this case, it is preferable to set the sheet-shaped film-forming mask 1 on the substrate 17 in a state of stretching its four sides by a fixed tension, and after the substrate 17 and the film-forming mask 1 are aligned, The magnetic metal member 2 is attracted by the magnet 15 and the film-forming mask 1 is brought into close contact with the substrate 17.
又，於上述實施形態中，對膜3為聚醯亞胺之情形進行了說明，但本發明並不限定於此，膜3只要為於線膨脹係數具有各向異性，其中係數小之線膨脹係數與磁性金屬構件2之線膨脹係數近似者，則可為其他樹脂製膜，亦可為多層積層膜。 Also, in the above embodiment, the case where the film 3 is polyimide has been described, but the present invention is not limited to this. As long as the film 3 has anisotropy in the coefficient of linear expansion, the coefficient of linear expansion is small. The coefficient which is similar to the linear expansion coefficient of the magnetic metal member 2 may be another resin film or a multilayer laminated film.
1‧‧‧成膜遮罩 1‧‧‧ film forming mask
2‧‧‧磁性金屬構件 2‧‧‧ magnetic metal components
2a‧‧‧細長狀之部分 2a‧‧‧ slim
3‧‧‧膜 3‧‧‧ film
3a、3b‧‧‧面 3a, 3b‧‧‧face
4‧‧‧框架 4‧‧‧frame
5‧‧‧貫通孔 5‧‧‧through hole
6‧‧‧開口圖案 6‧‧‧ opening pattern
6a‧‧‧開口端緣部 6a‧‧‧Open end edge
7‧‧‧開口 7‧‧‧ opening
18‧‧‧側壁 18‧‧‧ sidewall
Claims (9)
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| JPJP2013-082687 | 2013-04-11 | ||
| JP2013082687A JP6035548B2 (en) | 2013-04-11 | 2013-04-11 | Evaporation mask |
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| TW201500566A TW201500566A (en) | 2015-01-01 |
| TWI614354B true TWI614354B (en) | 2018-02-11 |
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| TW103112984A TWI614354B (en) | 2013-04-11 | 2014-04-09 | Deposition mask |
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| JP (1) | JP6035548B2 (en) |
| KR (1) | KR102109071B1 (en) |
| CN (1) | CN105121692B (en) |
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| JP6509630B2 (en) * | 2015-05-13 | 2019-05-08 | 株式会社アルバック | Sheet mask |
| KR102466211B1 (en) * | 2016-01-12 | 2022-11-14 | (주)포인트엔지니어링 | Mask for organic light emitting diode, and Deposition apparatus for organic light emitting diode, and Manufacturing method of organic light emitting diode using the same |
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| CN108779549B (en) * | 2016-03-18 | 2021-04-06 | 鸿海精密工业股份有限公司 | Vapor deposition mask, method for manufacturing vapor deposition mask, and method for manufacturing organic semiconductor element |
| CN108779553B (en) * | 2016-03-23 | 2021-04-06 | 鸿海精密工业股份有限公司 | Vapor deposition mask, method for manufacturing same, and method for manufacturing organic semiconductor element |
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| TWI678824B (en) * | 2016-07-29 | 2019-12-01 | 鴻海精密工業股份有限公司 | Mask and method for making same |
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| JP2014205870A (en) | 2014-10-30 |
| KR102109071B1 (en) | 2020-05-11 |
| WO2014168039A1 (en) | 2014-10-16 |
| TW201500566A (en) | 2015-01-01 |
| JP6035548B2 (en) | 2016-11-30 |
| CN105121692B (en) | 2017-12-15 |
| KR20150143426A (en) | 2015-12-23 |
| CN105121692A (en) | 2015-12-02 |
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