TWI766908B - 載置台及電漿處理裝置 - Google Patents
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Abstract
本發明旨在減少妨礙從對焦環往基台之傳熱的孔,而改善對焦環的溫度不均勻。本發明的載置台具有:基台,載置有被處理體;對焦環,包圍載置有被處理體的區域,且設置於基台上;連結構件,形成有貫通孔,***至形成於基台上之與對焦環的下部相對應的區域的***孔,而將基台連結至基台下方的構件;及升降銷,***至連結構件的貫通孔,且從***孔突出自如地設於基台,從***孔突出而使對焦環上升。
Description
本發明的各種態樣及實施形態係關於載置台及電漿處理裝置。
進行成膜或蝕刻等電漿處理的電漿處理裝置,於配置在處理容器內部的載置台,載置被處理體。載置台具有例如基台及對焦環等。基台具有載置有被處理體的區域。對焦環包圍載置有被處理體的區域而設於基台上。藉由使對焦環包圍載置有被處理體的區域並設於基台上,而改善在被處理體的邊緣部附近的電漿分布的均勻性。
然而,於使用電漿的蝕刻過程中,對焦環與被處理體共同緩慢被蝕削。當對焦環被蝕削,則在被處理體的邊緣部的電漿分布的均勻性下降。因此,有時在被處理體的邊緣部,會有蝕刻率變動而導致元件特性劣化的情形。因此,為了抑制電漿分布均勻性的下降,維持對焦環的高度甚為重要。
作為維持對焦環高度的技術,吾人已知的技術為:測定對焦環消耗量,依照其測定結果使對焦環上升。又,作為使對焦環上升的技術,吾人已知的技術為:將升降銷進退自如地***至形成於基台上之與對焦環下部相對應區域的貫通孔,並使升降銷突出,藉此使對焦環上升。 [先前技術文獻] [專利文獻]
[專利文獻1]專利第3388228號公報 [專利文獻2]日本特開2007-258417號公報 [專利文獻3]日本特開2011-54933號公報 [專利文獻4]日本特開2016-146472號公報
[發明欲解決之問題] 另外,於基台上之與對焦環下部相對應的區域,有時會彼此獨立設置升降銷用的貫通孔及***有螺絲構件的***孔。螺絲構件***至***孔,而將基台連結至基台下方的構件。升降銷用的貫通孔及螺絲構件用的***孔,為熱傳導率較基台為低的空間。因此,若於基台上之與對焦環的下部相對應的區域,彼此獨立設置升降銷用的貫通孔及螺絲構件用的***孔,則由於升降銷用的貫通孔及螺絲構件用的***孔二者,而妨礙從對焦環往基台的傳熱。藉此,於對焦環中與升降銷用的貫通孔及螺絲構件用的***孔相對應的部分,局部產生溫度特殊點,使得對焦環的溫度均勻性下降。
在此,吾人已知,當對焦環的溫度均勻性下降,則於使用電漿的蝕刻過程中,對焦環的消耗量均勻性下降,導致在被處理體的邊緣部的蝕刻率變動。因此,就維持在被處理體的邊緣部的蝕刻率的觀點而言,對焦環的溫度宜為均勻。因此,吾人期待能減少妨礙從對焦環往基台之傳熱的孔,並改善對焦環的溫度不均勻。 [解決問題之方法]
於一實施態樣中,所揭示的載置台具有:基台,載置有被處理體;對焦環,包圍載置有該被處理體的區域,且設置於該基台上;連結構件,形成有貫通孔,***至形成於該基台上之與該對焦環的下部相對應的區域的***孔,而將該基台連結至該基台的下方的構件;及升降銷,***至該連結構件的該貫通孔,且從該***孔突出自如地設於該基台,從該***孔突出而使該對焦環上升。 [發明效果]
依據所揭示的載置台的一態樣,可達到減少妨礙從對焦環往基台之傳熱的孔,而改善對焦環的溫度不均勻的效果。
以下,參考圖式,詳細說明本案揭示的載置台及電漿處理裝置的實施形態。又,對於各圖式中相同或相當的部分賦予相同符號。
(第1實施形態) 圖1係第1實施形態的電漿處理裝置100的概略構成的縱剖面圖。在此,例舉以1個平行平板型的電漿處理裝置100構成基板處理裝置的情形。
電漿處理裝置100,具備例如由表面經陽極氧化處理(氧皮鋁處理)的鋁所成之形成為圓筒形狀的處理容器102。處理容器102為接地。於處理容器102內的底部,設有用以載置作為被處理體的晶圓W的大致圓柱狀的載置台110。載置台110具有基台114。基台114由導電性金屬所形成,構成下部電極。基台114由絕緣體112所支撐。絕緣體112係配置於處理容器102底部的圓筒狀構件。
基台114具有:載置有晶圓W的區域;及包圍載置有晶圓W的區域之區域。以下,將載置有晶圓W的區域,稱為「載置區」,將包圍載置有晶圓W的區域之區域,稱為「外圍區」。本實施形態中,基台114的載置區相較於基台114的外圍區,高度較高。於基台114的載置區上,設置靜電吸盤120。靜電吸盤120的構成為:於絕緣材之間,隔設著電極122。從連接於電極122的未圖示直流電源,對靜電吸盤120施加例如1.5kV的直流電壓。藉此,使晶圓W靜電吸附於靜電吸盤120。
於基台114的外圍區上,設置對焦環124。藉由於基台114的外圍區上設置對焦環124,而改善在晶圓W的邊緣部附近的電漿分布的均勻性。
於絕緣體112、基台114及靜電吸盤120,形成未圖示之氣體通路,該氣體通路用以對載置於基台114的載置區的晶圓W的背面供給傳熱介質(例如He氣體等背面氣體)。經由此傳熱介質,進行基台114與晶圓W間的熱傳送,而使晶圓W維持為既定溫度。
於基台114的內部,形成冷媒流道117。將藉由未圖示之急冷器單元冷卻至既定溫度的冷媒,供給並循環於冷媒流道117。
又,於基台114,從基台114的載置區突出自如地設置升降銷172。升降銷172由未圖示之驅動機構所驅動,從基台114的載置區突出而使晶圓W上升。
再者,於基台114,從基台114的外圍區突出自如地設置升降銷182。升降銷182由未圖示之驅動機構所驅動,從基台114的外圍區突出而使對焦環124上升。又,針對包含基台114、對焦環124及升降銷182之載置台110的詳細內容,於後述之。
於基台114的上方,以與此基台114相向的方式,設置上部電極130。於此上部電極130與基台114之間所形成的空間,成為電漿產生空間。上部電極130經由絕緣性遮蔽構件131而支撐於處理容器102的上部。
上部電極130主要由電極板132、及拆裝自如地支撐此電極板的電極支撐體134所構成。電極板132由例如石英所構成,電極支撐體134由例如表面經氧皮鋁處理的鋁等的導電性材料所構成。
於電極支撐體134,設置用以將來自處理氣體供給源142的處理氣體導入至處理容器102內的處理氣體供給部140。處理氣體供給源142經由氣體供給管144而連接至電極支撐體134的氣體導入口143。
如圖1所示,於氣體供給管144,從上游側依序設置質量流量控制器(MFC)146及開關閥148。又,亦可設置FCS(Flow Control System)以代替MFC。從處理氣體供給源142,供給如C4
F8
氣體的氟碳化合物氣體(Cx
Fy
),以作為蝕刻用的處理氣體。
處理氣體供給源142供給例如電漿蝕刻用的蝕刻氣體。又,圖1中由氣體供給管144、開關閥148、質量流量控制器146、處理氣體供給源142等所構成的處理氣體供給系統雖僅顯示1個,但電漿處理裝置100具備複數個處理氣體供給系統。例如,對於CF4
、O2
、N2
、CHF3
等蝕刻氣體,分別獨立進行流量控制,再供給至處理容器102內。
於電極支撐體134,設置例如大致圓筒狀的氣體擴散室135,可使從氣體供給管144導入的處理氣體均等擴散。於電極支撐體134的底部及電極板132,形成使來自氣體擴散室135的處理氣體噴出至處理容器102內的多個氣體噴出孔136。可使於氣體擴散室135擴散的處理氣體,從多個氣體噴出孔136均等地往電漿產生空間噴出。就此點而言,上部電極130的功能係用作為供給處理氣體的噴淋頭。
上部電極130具備可將電極支撐體134調整成既定溫度的電極支撐體調溫部137。電極支撐體調溫部137,例如構成為使溫度調節介質於設在電極支撐體134內的溫度調節介質室138循環。
於處理容器102的底部,連接有排氣管104,於此排氣管104,連接有排氣部105。排氣部105具備渦輪分子泵等的真空泵,將處理容器102內調整成既定的減壓氣體環境。又,於處理容器102的側壁,設有晶圓W的搬入/搬出口106,於搬入/搬出口106設有閘閥108。於進行晶圓W的搬入/搬出時,開啟閘閥108。接著,藉由未圖示之搬運臂等,經由搬入/搬出口106進行晶圓W的搬入/搬出。
於上部電極130,連接有第1高頻電源150,於其供電線插設有第1匹配器152。第1高頻電源150能輸出具有50~150MHz範圍的頻率的電漿產生用的高頻電力。如此,藉由將高頻率的電力施加於上部電極130,可於處理容器102內形成較佳解離狀態且高密度的電漿,可進行於更為低壓條件下的電漿處理。第1高頻電源150的輸出電力的頻率以50~80MHz為佳,典型而言,調整至圖示的60MHz或其附近的頻率。
於作為下部電極的基台114,連接有第2高頻電源160,於其供電線上,插設有第2匹配器162。此第2高頻電源160能輸出具有數百kHz~十數MHz範圍的頻率的偏壓用的高頻電力。第2高頻電源160的輸出電力的頻率,典型而言,調整成2MHz或13.56MHz等。
又,於基台114,連接有將從第1高頻電源150流入基台114的高頻電流予以過濾的高通濾波器(HPF)164,於上部電極130,連接有將從第2高頻電源160流入上部電極130的高頻電流予以過濾的低通濾波器(LPF)154。
於電漿處理裝置100,連接有控制部(整體控制裝置)400,藉由此控制部400控制電漿處理裝置100的各部。又,於控制部400,連接有操作部410,該操作部410由作業員為了管理電漿處理裝置100而進行指令的輸入操作等之鍵盤、使電漿處理裝置100的運作狀況視覺化顯示之顯示器等所構成。
再者,於控制部400,連接有記憶部420,該記憶部420記憶有為了藉由控制部400的控制實現以電漿處理裝置100所執行的各種處理(除對晶圓W的電漿處理之外,後述的處理室狀態穩定化處理等)所需的處理條件(配方)等。
於記憶部420,記憶有例如複數個處理條件(配方)。此等處理條件係將控制電漿處理裝置100的各部的控制參數、設定參數等複數個參數值予以整合而成者。各處理條件具有例如處理氣體的流量比、處理室內壓力、高頻電力等參數值。
又,此等程式或處理條件亦可記憶於硬碟或半導體記憶體,又,亦可在收納於可藉由CD-ROM、DVD等可攜式電腦進行讀取的記錄媒體的狀態下,裝設於記憶部420的既定位置。
控制部400根據來自操作部410的指示等,從記憶部420讀取所希望的程式、處理條件而控制各部,藉此,執行於電漿處理裝置100的所希望的處理。又,可藉由來自操作部410的操作,編輯處理條件。
其次,針對載置台110,進行詳細說明。圖2係顯示第1實施形態的載置台110的構成的立體圖。圖3係顯示第1實施形態的載置台110的構成的剖面圖。又,圖2中,為了便於說明,省略對焦環124及靜電吸盤120。又,於圖3所示之例中,將基台114與靜電吸盤120分別記載,但以下有時將基台114與靜電吸盤120合併稱為「基台114」。又,於將基台114與靜電吸盤120合併稱為「基台114」的情形時,靜電吸盤120的頂面與基台114的載置區115相對應。
如圖2及圖3所示,基台114具有載置區115與外圍區116。於載置區115上,載置有晶圓W。於外圍區116上,隔著形成有貫通孔126a的伸縮性傳熱片126,而載置有對焦環124。亦即,基台114的外圍區116,係基台114上之與對焦環124的下部相對應的區域。
於基台114的外圍區116,形成有***孔116a,於***孔116a,***有螺絲構件127。另一方面,於作為基台114的下方的構件之絕緣體112,形成有於厚度方向貫穿絕緣體112的螺絲孔112a,於螺絲孔112a,螺合有***至***孔116a的螺絲構件127。藉由使***至***孔116a的螺絲構件127螺合至絕緣體112的螺絲孔112a,而利用螺絲構件127使基台114與絕緣體112連結。本實施形態中,因利用複數個螺絲構件127使基台114連結至絕緣體112,故如圖2所示,依照螺絲構件127的數目,於基台114的外圍區116形成複數個***孔116a。
於螺絲構件127,形成有沿著螺絲構件127的中心軸延伸的貫通孔127a。於螺絲構件127的貫通孔127a,***有升降銷182。升降銷182***至螺絲構件127的貫通孔127a,可從***孔116a突出自如地設於基台114。升降銷182從***孔116a突出而使對焦環124上升。具體而言,升降銷182於從***孔116a突出的情形時,藉由通過傳熱片126的貫通孔126a並抵接至對焦環124的下部,而使對焦環124上升。伴隨著對焦環124的上升,傳熱片126伸長而填補基台114與對焦環124間之間隙。
又,就使對焦環124水平上升的觀點而言,設於基台114的升降銷182的數目,以3個以上為佳。圖2中,例示3個升降銷182。
又,於基台114上之與對焦環124下部相對應的區域(亦即,基台114的外圍區116),有時彼此獨立設置升降銷182用的貫通孔及螺絲構件127用的***孔116a。升降銷182用的貫通孔與螺絲構件127用的***孔116a,相較於基台114,為熱傳導率較低的空間。因此,若於基台114的外圍區116彼此獨立設置升降銷182用的貫通孔及螺絲構件127用的***孔116a,則由於升降銷182用的貫通孔及螺絲構件127用的***孔116a二者,而妨礙從對焦環124往基台114的傳熱。因此,於對焦環124中與升降銷182用的貫通孔及螺絲構件127用的***孔116a相對應的部分,局部產生溫度特殊點,而使得對焦環124的溫度均勻性下降。
圖4顯示於基台114的外圍區116彼此獨立設置升降銷182用的貫通孔116b及螺絲構件127用的***孔116a時的傳熱模樣的圖。又,圖4中,為了便於說明,省略基台114與對焦環124間的傳熱片126。又,圖4中,箭頭表示熱的流向。又,圖4中,曲線501表示對焦環124的溫度分布。
對焦環124的溫度,由從電漿往對焦環124的傳熱及從對焦環124往基台114的傳熱所決定。如圖4所示,若於基台114的外圍區116彼此獨立升降銷182用的貫通孔116b及螺絲構件127用的***孔116a,則由於升降銷182用的貫通孔116b及螺絲構件127用的***孔116a二者,而妨礙從對焦環124往基台114的傳熱。藉此,如曲線501所示,於對焦環124中與升降銷182用的貫通孔116b及螺絲構件127用的***孔116a相對應的部分,溫度局部上升。結果,使得對焦環124的溫度均勻性下降。在此,吾人已知,當對焦環124的溫度均勻性下降,則於使用電漿的蝕刻過程中對焦環124消耗量的均勻性下降,而導致在晶圓W的邊緣部的蝕刻率變動。
圖5為用以說明對焦環124的溫度與蝕刻率的關係的圖。圖5中,顯示對對焦環124進行使用電漿的沉積處理時的沉積物膜厚。又,圖5中,虛線的圓表示,對焦環124中與升降銷182用的貫通孔116b及螺絲構件127用的***孔116a相對應的部分。
如圖5所示,對焦環124中與升降銷182用的貫通孔116b及螺絲構件127用的***孔116a相對應的部分,與其他部分相比,沉積物的膜厚變薄。吾人認為,此係因於對焦環124中與升降銷182用的貫通孔116b及螺絲構件127用的***孔116a相對應的部分,溫度局部上升,而阻礙沉積物的附著所致。沉積物的膜厚愈薄,於使用電漿的蝕刻過程中,對焦環124的消耗量增加,而導致在晶圓W的邊緣部的蝕刻率大幅變動。因此,就維持在晶圓W的邊緣部的蝕刻率的觀點而言,對焦環124的溫度宜均勻。
因此,於本實施形態中,希望能減少妨礙從對焦環124往基台114之傳熱的孔而改善對焦環124的溫度不均勻。具體而言,本實施形態中,藉由將升降銷182***至螺絲構件127的貫通孔127a,而自基台114的外圍區116減少升降銷182用的貫通孔116b(參考圖4)。
圖6顯示自基台114的外圍區116減少升降銷182用的貫通孔116b時的傳熱模樣的圖。又,圖6中,為了便於說明,省略基台114與對焦環124間的傳熱片126。又,圖6中,箭頭表示熱的流向。又,圖6中,曲線502表示對焦環124的溫度分布。
對焦環124的溫度,由從電漿往對焦環124的傳熱及從對焦環124往基台114的傳熱所決定。如圖6所示,本實施形態中,藉由將升降銷182***至螺絲構件127的貫通孔127a,而自基台114的外圍區116減少升降銷182用的貫通孔116b。亦即,本實施形態中,與於基台114的外圍區116彼此獨立設置升降銷182用的貫通孔116b及螺絲構件127用的***孔116a的構成(亦即,圖4所示的構成)相較,妨礙從對焦環124往基台114之傳熱的孔變少。藉此,如曲線502所示,本實施形態中,與圖4所示的構成相較,於對焦環124中局部產生的溫度特殊點變少。結果,可改善對焦環124的溫度不均勻。
以上,依據本實施形態,將升降銷182***至螺絲構件127的貫通孔127a,而該螺絲構件127***至形成於基台114的外圍區116的***孔116a,藉由從***孔116a突出的升降銷182而使對焦環124上升。因此,依據本實施形態,可自基台114的外圍區116減少升降銷182用的貫通孔。結果,可減少從對焦環124往基台114之傳熱的孔,可改善對焦環124的溫度不均勻。
又,依據本實施形態,對焦環124隔著形成有貫通孔126a的伸縮性傳熱片126而設置於基台114上,升降銷182於從***孔116a突出而使對焦環124上升的情形時,通過傳熱片126的貫通孔126a而抵接至對焦環124的下部。如此,傳熱片126以伴隨著對焦環124的上升而填補基台114與對焦環124間之間隙的方式伸長。藉此,即使於對焦環124上升時,亦可於改善對焦環124的溫度不均勻之同時,繼續進行從對焦環124往基台114的傳熱。
又,依據本實施形態,於基台114的內部形成冷媒流道117。藉此,可於改善對焦環124的溫度不均勻之同時,有效率地進行從對焦環124往基台114的傳熱。
(第2實施形態) 第2實施形態的特徵點為:藉由在基台與對焦環之間配置發熱構件,而提升對焦環的溫度均勻性。
第2實施形態的電漿處理裝置的構成,因與第1實施形態的電漿處理裝置100的構成相同,故省略其說明。第2實施形態中,載置台110的構成與第1實施形態不同。
圖7為第2實施形態的載置台110構成的剖面圖。圖8為圖7所示的發熱構件128構成的俯視圖。圖7中,對於與圖3相同部分賦予相同符號,而省略其說明。又,圖8中,為了便於說明,省略對焦環124及傳熱片126。
如圖7所示,本實施形態中,於基台114與對焦環124之間,配置發熱構件128。如圖8所示,發熱構件128覆蓋基台114上之與對焦環124的下部相對應的區域(亦即,基台114的外圍區116)中之去除***孔116a的區域。發熱構件128具有:由絕緣性材料所形成的本體部;及形成於本體部內部的加熱器部128a,將對焦環124中與螺絲構件127用的***孔116a相對應的部分以外的部分,予以加熱。
以上,依據本實施形態,藉由發熱構件128,將對焦環124中與螺絲構件127用的***孔116a相對應的部分以外的部分,予以加熱。在此,從對焦環124往基台114的傳熱,因螺絲構件127用的***孔116a而受到妨礙,故於對焦環124中與螺絲構件127用的***孔116a相對應的部分,溫度局部上升。藉由發熱構件128將對焦環124中與螺絲構件127用的***孔116a相對應的部分以外的部分予以加熱,可縮小對焦環124中的溫度差。結果,可提升對焦環124的溫度均勻性。
(第3實施形態) 第3實施形態的特徵為:藉由在對焦環的下部形成嵌合著升降銷的孔洞,而使對焦環定位。
第3實施形態的電漿處理裝置的構成,因與第1實施形態的電漿處理裝置100的構成相同,故省略其說明。第3實施形態中,載置台110的構成與第1實施形態不同。
圖9為第3實施形態的載置台110構成的剖面圖。圖9中,對於與圖3相同部分賦予相同符號,而省略其說明。
如圖9所示,本實施形態中,在對焦環124的下部形成有底狀的孔洞124a。又,升降銷182嵌合至有底狀的孔洞124a。亦即,升降銷182以升降銷182沿著***孔116a退避至最低位置的狀態,延伸至較基台114的外圍區116更高的位置,而嵌合至有底狀的孔洞124a。
以上,依據本實施形態,升降銷182嵌合至形成在對焦環124的下部的有底狀的孔洞124a。藉此,可於改善對焦環124的溫度不均勻之同時,藉由升降銷182使對焦環124定位。
100‧‧‧電漿處理裝置102‧‧‧處理容器104‧‧‧排氣管105‧‧‧排氣部106‧‧‧搬入/搬出口108‧‧‧閘閥110‧‧‧載置台112‧‧‧絕緣體112a‧‧‧螺絲孔114‧‧‧基台115‧‧‧載置區116‧‧‧外圍區116a‧‧‧***孔116b‧‧‧貫通孔117‧‧‧冷媒流道120‧‧‧靜電吸盤122‧‧‧電極124‧‧‧對焦環124a‧‧‧孔洞126‧‧‧傳熱片126a‧‧‧貫通孔127‧‧‧螺絲構件127a‧‧‧貫通孔128‧‧‧發熱構件128a‧‧‧加熱器部130‧‧‧上部電極131‧‧‧絕緣性遮蔽構件132‧‧‧電極板134‧‧‧電極支撐體135‧‧‧氣體擴散室136‧‧‧氣體噴出孔137‧‧‧電極支撐體調溫部138‧‧‧溫度調節介質室140‧‧‧處理氣體供給部142‧‧‧處理氣體供給源143‧‧‧氣體導入口144‧‧‧氣體供給管146‧‧‧質量流量控制器148‧‧‧開關閥150‧‧‧第1高頻電源152‧‧‧第1匹配器154‧‧‧低通濾波器160‧‧‧第2高頻電源162‧‧‧第2匹配器164‧‧‧高通濾波器172、182‧‧‧升降銷400‧‧‧控制部410‧‧‧操作部420‧‧‧記憶部501、502‧‧‧曲線W‧‧‧晶圓
【圖1】圖1係顯示第1實施形態的電漿處理裝置的概略構成的縱剖面圖。 【圖2】圖2係顯示第1實施形態的載置台的構成的立體圖。 【圖3】圖3係顯示第1實施形態的載置台的構成的剖面圖。 【圖4】圖4係顯示於基台的外圍區彼此獨立設置升降銷用的貫通孔及螺絲構件用的***孔時的傳熱模樣的圖。 【圖5】圖5係用以說明對焦環的溫度與蝕刻率的關係的圖。 【圖6】圖6係顯示自基台的外圍區減少升降銷用的貫通孔時的傳熱模樣的圖。 【圖7】圖7係顯示第2實施形態的載置台構成的剖面圖。 【圖8】圖8係顯示圖7的發熱構件構成的俯視圖。 【圖9】圖9係顯示第3實施形態的載置台構成的剖面圖。
110‧‧‧載置台
112‧‧‧絕緣體
112a‧‧‧螺絲孔
114‧‧‧基台
115‧‧‧載置區
116‧‧‧外圍區
116a‧‧‧***孔
117‧‧‧冷媒流道
120‧‧‧靜電吸盤
124‧‧‧對焦環
126‧‧‧傳熱片
126a‧‧‧貫通孔
127‧‧‧螺絲構件
127a‧‧‧貫通孔
182‧‧‧升降銷
Claims (5)
- 一種載置台,具有:基台,載置有被處理體;對焦環,包圍著載置有該被處理體的區域,而設置於該基台上;連結構件,形成有貫通孔,且被***至形成於該基台上之與該對焦環的下部相對應的區域的***孔,而將該基台連結至該基台之下方的構件;及升降銷,***至該連結構件的該貫通孔,且以從該***孔突出自如方式設置於該基台,可從該***孔突出而使該對焦環上升;該對焦環,隔著形成有貫通孔的伸縮性傳熱構件而設置於該基台上,該升降銷,於從該***孔突出而使該對焦環上升的情形時,通過該傳熱構件的該貫通孔而抵接至該對焦環的下部,伴隨著該對焦環的上升,該傳熱構件伸長而填補該基台與該對焦環間之間隙。
- 如申請專利範圍第1項之載置台,更具有:發熱構件,配置於該基台與該對焦環之間,覆蓋著該基台上之與該對焦環的下部相對應的區域中之除去該***孔以外的區域。
- 如申請專利範圍第1項之載置台,其中,於該對焦環的下部,形成有底狀的孔洞,該升降銷嵌合於該有底狀的孔洞。
- 如申請專利範圍第1項之載置台,更具有:冷媒流道,形成於該基台的內部,以供冷媒流通。
- 一種電漿處理裝置,其具有如申請專利範圍第1至4項中任一項之載置台。
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KR102432446B1 (ko) | 2022-08-16 |
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