TWI755632B - 半導體封裝 - Google Patents
半導體封裝 Download PDFInfo
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- TWI755632B TWI755632B TW108134393A TW108134393A TWI755632B TW I755632 B TWI755632 B TW I755632B TW 108134393 A TW108134393 A TW 108134393A TW 108134393 A TW108134393 A TW 108134393A TW I755632 B TWI755632 B TW I755632B
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- Prior art keywords
- intermediate substrate
- base layer
- substrate
- semiconductor package
- silicon
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 200
- 239000000758 substrate Substances 0.000 claims abstract description 332
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 6
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- 238000011049 filling Methods 0.000 description 4
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- 230000035515 penetration Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 2
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Abstract
一種半導體封裝可包括:封裝基底;第一中間基底,安
裝在封裝基底上;以及第一半導體晶片,設置在第一中間基底上。第一中間基底可包括:第一基礎層;第二基礎層,設置在第一基礎層上;電路圖案,設置在第一基礎層及第二基礎層中的每一者中;以及積體裝置,嵌置在第一基礎層中且連接到電路圖案中的至少一個電路圖案。第一基礎層的頂表面可接觸第二基礎層的底表面。
Description
本發明是有關於一種半導體封裝及一種製作所述半導體封裝的方法,且特別是有關於一種包括中間基底(interposer substrate)的半導體封裝及製作所述包括中間基底的半導體封裝的方法。
本申請主張在2019年3月26日在韓國知識產權局提出申請的韓國專利申請第10-2019-0034502號的優先權,所述韓國專利申請的全部內容併入本申請供參考。
在其中積體電路(integrated circuit,IC)晶片以半導體封裝的形式設置的情況下,積體電路晶片可容易地用作電子產品的一部分。一般來說,半導體封裝包括印刷電路板(printed circuit board,PCB)及半導體晶片,半導體晶片安裝在PCB上且通過接合線(bonding wire)或凸塊電連接到PCB。
隨著電子行業的最新進展,對高性能、高速度及小型的電子組件的需求越來越大。為滿足這種需求,最近正在開發將多
個半導體晶片安裝在單個封裝中的封裝技術。在其中封裝的最終結構包括多個半導體封裝的情況下,可在半導體封裝之間設置中間件以將它們電連接到彼此。通過使用中間件,可容易地連接半導體封裝且增加在半導體封裝之間構建互連結構的自由度。
本發明概念的實施例提供一種面積大的中間基底、一種包括所述面積大的中間基底的半導體封裝以及一種製作所述包括所述面積大的中間基底的半導體封裝的方法。
本發明概念的實施例提供一種高積集度的半導體封裝以及一種製作所述高積集度的半導體封裝的方法。
本發明概念的實施例提供一種具有經改善的電特性的半導體封裝以及一種製作所述具有經改善的電特性的半導體封裝的方法。
根據本發明概念的實施例,一種半導體封裝可包括:封裝基底;第一中間基底,安裝在所述封裝基底上;以及第一半導體晶片,設置在所述第一中間基底上。所述第一中間基底可包括:第一基礎層;第二基礎層,設置在所述第一基礎層上;電路圖案,設置在所述第一基礎層及所述第二基礎層中的每一者中;以及積體裝置,嵌置在所述第一基礎層中且連接到所述電路圖案中的至少一個電路圖案。所述第一基礎層的頂表面可接觸所述第二基礎層的底表面。
根據本發明概念的實施例,一種半導體封裝可包括:封裝基底;第一矽中間件(silicon interposer),設置在所述封裝基底上,所述第一矽中間件包括互連圖案;第二矽中間件,設置在所述第一矽中間件上,所述第二矽中間件包括貫穿電極以及安裝在所述第二矽中間件上的至少一個半導體晶片。所述第一矽中間件的表面與所述第二矽中間件的表面在邊界界面處連接到彼此,使得所述互連圖案與所述貫穿電極連接到彼此。
根據本發明概念的實施例,一種製作半導體封裝的方法可包括:提供第一子中間基底,所述第一子中間基底包括第一基礎層及設置在所述第一基礎層中的互連圖案;提供第二子中間基底,所述第二子中間基底包括第二基礎層及形成在所述第二基礎層中的貫穿電極;將所述第二子中間基底設置在所述第一子中間基底上,以使所述第一基礎層的表面與所述第二基礎層的表面彼此接觸;將半導體晶片安裝在所述第二子中間基底上;以及將所述第一子中間基底安裝在封裝基底上。
根據本發明概念的實施例,一種半導體封裝可包括:封裝基底;第一中間基底,安裝在所述封裝基底上,所述第一中間基底包括彼此接觸的第一子中間基底與第二子中間基底;以及半導體晶片,安裝在所述第一中間基底上。所述第一子中間基底可包括設置在所述第一子中間基底中的互連圖案。所述第二子中間基底可包括穿過所述第二子中間基底且接觸所述互連圖案的貫穿電極。在所述第一子中間基底與所述第二子中間基底之間的界面
處,所述互連圖案與所述貫穿電極可構成由彼此相同的材料形成的單一整體。
10、20:半導體封裝
100:封裝基底
100a、212b、222b、302b:頂表面
100b、212a、222a、224a、302a:底表面
105:外側端子
200:第一中間基底
205:第一連接端子
210:第一子中間基底/子中間基底
212:第一基礎層
214:電路互連線/互連線
214a:第一焊盤
214b:第二焊盤
216:第一貫穿電極/貫穿電極
218:第一互連圖案
220:第二子中間基底/子中間基底
222:第二基礎層
224:第二互連圖案/第二貫穿電極/貫穿電極
230:積體裝置
232:第一導電層
234:第二導電層
236:絕緣層
300:第二中間基底
302:第三基礎層
304:第三互連圖案
305:第二連接端子
400:第一半導體晶片/半導體晶片/晶片
405:第一晶片端子
500:第二半導體晶片/半導體晶片/晶片
505:第二晶片端子
600:散熱器
700:載體基底
A、B、C:部分
AG:氣隙
CA:電容器
GT:閘極
IF1、IF2:界面
SL:鋸切線
S/D:源極/汲極
ST1:第一結構
ST2:第二結構
T1、T2、T3:厚度
TH:穿孔
TR:電晶體/矽類電晶體
W1、W2、W3、W4:寬度
結合所附圖式並閱讀以下簡潔說明,將更清楚地理解示例性實施例。所附圖式代表如本文中所闡述的非限制性示例性實施例。
圖1是示出根據本發明概念的實施例的半導體封裝的剖視圖。
圖2A及圖2B是示出根據本發明概念的實施例的第一中間基底的放大圖。
圖3是示出根據本發明概念的實施例的半導體封裝的剖視圖。
圖4是示出根據本發明概念的實施例的第一中間基底的放大圖。
圖5是示出根據本發明概念的實施例的半導體封裝的剖視圖。
圖6是示出根據本發明概念的實施例的第一中間基底的放大圖。
圖7到圖16是示出根據本發明概念的實施例的製作半導體封裝的方法的剖視圖。
圖17及圖18是示出根據本發明概念的實施例的製作半導體
封裝的方法的剖視圖。
應注意,這些圖旨在示出在某些示例性實施例中所利用的方法、結構和/或材料的一般特性並對以下提供的書面說明進行補充。然而,這些圖式並非按比例繪製,且可能不會精確地反映任何給定實施例的精確結構特性或性能特性,且不應被解釋為定義或限制示例性實施例所涵蓋的值或屬性的範圍。舉例來說,為清晰起見,可減小或放大分子、層、區和/或結構元件的相對厚度及位置。在各種圖式中使用相似或相同的參考編號旨在表示存在相似或相同的元件或特徵。
現將參照其中示出示例性實施例的附圖更全面地闡述本發明概念的示例性實施例。圖1是示出根據本發明概念的實施例的半導體封裝的剖視圖。圖2A及圖2B是放大圖,圖2A及圖2B中的每一者示出根據本發明概念的實施例的第一中間基底,且對應於圖1的部分“A”。圖3是示出根據本發明概念的實施例的半導體封裝的剖視圖。圖4是放大圖,圖4示出根據本發明概念的實施例的第一中間基底,且對應於圖3的部分“B”。
參照圖1,半導體封裝10可包括封裝基底100、安裝在封裝基底100上的第一中間基底200、位於第一中間基底200上的第二中間基底300以及安裝在第二中間基底300上的至少一個半導體晶片400/500。每一半導體晶片400/500可為包括積體電路且
由半導體晶圓(wafer)形成的晶粒(die)。在一些實施例中,可使用堆疊的晶片來代替每一晶片400或500。
可設置有封裝基底100。封裝基底100可包括印刷電路板(printed circuit board,PCB)。在某些實施例中,封裝基底100可為其中絕緣層與互連層交替堆疊的結構。在封裝基底100的頂表面100a上可設置有基底焊盤(未示出)。
在封裝基底100下方可設置有外側端子105(例如,外部連接端子)。詳細來說,外側端子105可設置在端子焊盤(未示出)上,端子焊盤(terminal pad)設置在封裝基底100的底表面100b上。外側端子105可包括焊料球或焊料凸塊,且根據外側端子105的種類而定,半導體封裝10可為球柵陣列(ball grid array,BGA)結構、精細球柵陣列(fine ball-grid array,FBGA)結構或接腳柵陣列(land grid array,LGA)結構中的一者。
在封裝基底100上可設置有第一中間基底200。第一中間基底200可安裝在封裝基底100的頂表面100a上。舉例來說,第一中間基底200可通過第一連接端子205電連接到封裝基底100。以下將更詳細地闡述第一中間基底200的結構。
參照圖1及圖2A,第一中間基底200可包括第一子中間基底210、第二子中間基底220、電路圖案及積體裝置230,且此處,電路圖案可設置在第一子中間基底210及第二子中間基底220中以構成電路。電路圖案可包括設置在第一子中間基底210中的第一互連圖案218以及設置在第二子中間基底220中的第二互連
圖案224。積體裝置230(例如,積體電路裝置)可設置在第一子中間基底210中。
第一子中間基底210可設置在封裝基底100上。第一子中間基底210可包括第一基礎層212、第一互連圖案218及積體裝置230。
第一基礎層212可包含矽(Si)。因此,第一子中間基底210可被稱為第一矽中間件。由於第一基礎層212中的矽具有高的熱導率,因此以下將闡述的所述至少一個半導體晶片400/500中產生的熱量可容易地通過第一中間基底200排出到外部。另外,由於第一基礎層212中的矽具有高的硬度,因此可能可抑制第一中間基底200的翹曲問題,所述翹曲問題可能是由半導體封裝10的製作製程中或操作期間提供的熱量而引起。
第一互連圖案218可設置在第一基礎層212中。第一互連圖案218可為用於對所述至少一個半導體晶片400/500進行再分布的圖案,以下將對此進行闡述。舉例來說,第一互連圖案218的一部分可包括與封裝基底100的頂表面100a平行地延伸(例如,水平地)的電路互連線214以及被設置成垂直穿過第一基礎層212的第一貫穿電極216。第一互連圖案218的其他部分可構成第一焊盤214a(其被暴露在第一基礎層212的底表面212a上)及第二焊盤214b(其被暴露在第一基礎層212的頂表面212b上)。第一焊盤214a與第二焊盤214b可通過電路互連線214及第一貫穿電極216電連接到彼此且可與電路互連線214及第一貫穿電極
216一起構成再分布電路。儘管在圖2A中未示出,但再分布連接可在至少兩個不同的水平方向上發生,以實現第一焊盤214a與第二焊盤214b之間的電連接。此處,第一貫穿電極216的寬度W1(例如,水平寬度)可大於第一基礎層212的厚度T1(例如,垂直方向上厚度)的1/10倍。因此,第一貫穿電極216可具有0.1或大於0.1(例如,在一些實施例中,在0.1與2.0之間)的寬高比(aspect ratio)。第一互連圖案218可由導電材料(例如,金屬材料)中的至少一者形成或者包含導電材料中的至少一者。
第一連接端子205可設置在第一基礎層212的底表面212a上。第一連接端子205可設置在封裝基底100的基底焊盤(未示出)與第一子中間基底210的第一焊盤214a之間。第一連接端子205可將第一子中間基底210電連接到封裝基底100。第一連接端子205可包括例如焊料球或焊料凸塊。
積體裝置230可設置在第一基礎層212中。積體裝置230可包括被動裝置。舉例來說,積體裝置230可包括電容器CA。電容器CA可包括第一導電層232、絕緣層236及第二導電層234。第一導電層232與第二導電層234可彼此間隔開,且絕緣層236可設置在第一導電層232與第二導電層234之間。第一導電層232、絕緣層236及第二導電層234可堆疊在與封裝基底100的頂表面100a垂直的方向上。電容器CA可電連接到第一子中間基底210的第一互連圖案218。舉例來說,第一導電層232及第二導電層234中的至少一者可為第一互連圖案218的與封裝基底100的
頂表面100a平行地延伸的一部分。換句話說,積體裝置230可為包括設置在第一互連圖案218的兩個分離的導電部分之間的絕緣層236的電容器。在某些實施例中,儘管未示出,但積體裝置230可包括電感器或電阻器。
作為另外一種選擇,積體裝置230可包括主動裝置。舉例來說,如圖2B中所示,積體裝置230可為電晶體TR。第一基礎層212可由矽(Si)形成,且因此,矽類電晶體TR可設置在第一基礎層212上。此處,電晶體TR可掩埋在第一基礎層212中。舉例來說,電晶體TR的每一元件(例如,源極/汲極S/D及閘極GT)可掩埋在第一基礎層212中,且電晶體TR可不突出到第一基礎層212的頂表面212b上方。電晶體TR的源極/汲極S/D及閘極GT可電連接到第一子中間基底210的第一互連圖案218。
根據本發明概念的實施例,積體裝置230可設置在第一子中間基底210中。這可使得有可能改善第一中間基底200的性能特性。另外,不需要為在封裝基底100或第一中間基底200上安裝裝置(例如,積體裝置230)提供額外的空間,且這可使得有可能減小半導體封裝10的尺寸。
進一步參照圖1及圖2A,第二子中間基底220可設置在第一子中間基底210上。第二子中間基底220可包括第二基礎層222及第二互連圖案224。第二子中間基底220從俯視圖來看可具有與第一子中間基底210相同的形狀及尺寸,以使得第二子中間基底220的所有邊緣與第一子中間基底210的相應的邊緣對準並
與第一子中間基底210的相應的邊緣交疊。因此,第二子中間基底220的外側壁可與第一子中間基底210的相應的外側壁共面。
第二基礎層222可設置在第一基礎層212上。第二基礎層222的底表面222a可在第一基礎層212與第二基礎層222之間的界面處與第一基礎層212的頂表面212b接觸。除非上下文另外表明,否則如本文中所用,“接觸”或“與…接觸”是指直接實體連接,即觸及。舉例來說,在某些實施例中,第二基礎層222及第一基礎層212可被設置成單獨的元件,且在這種情況下,第一基礎層212與第二基礎層222之間的界面可被視覺地識別。在一些實施例中,第二基礎層222可包含與第一基礎層212相同的材料。舉例來說,第二基礎層222可包含矽(Si)。因此,第一子中間基底210可被稱為第一矽中間件。在這種情況下,第一基礎層212與第二基礎層222可在其之間的界面處連接,但是可形成它們連接到彼此的視覺上連續的邊界界面。由於第二基礎層222中的矽具有高的熱導率,因此以下將闡述的所述至少一個半導體晶片400/500中產生的熱量可容易地通過第一中間基底200排出到外部。另外,由於第二基礎層222中的矽具有高的硬度,因此可能可抑制第一中間基底200的翹曲問題,所述翹曲問題可能是由半導體封裝10的製作過程或操作期間提供的熱量而引起。
第二互連圖案224可設置在第二基礎層222中。第二互連圖案224可用於將所述至少一個半導體晶片400/500電連接到第一子中間基底210的第一互連圖案218。舉例來說,第二互連圖案
224可包括被設置成垂直地穿過第二基礎層222的第二貫穿電極224,且此處,第二貫穿電極與第二互連圖案可為相同的元件,且將使用相同的參考編號224來標識。第二貫穿電極224可通過第二基礎層222的頂表面222b及底表面222a暴露出來。在第一子中間基底210與第二子中間基底220之間的界面處,第二貫穿電極224的底表面224a可連接到第一子中間基底210的第一互連圖案218的第二焊盤214b。在實施例中,第二貫穿電極224與第二焊盤214b可連續地連接到彼此(例如,它們可統一地設置成單一整體),以使得第二貫穿電極224與第二焊盤214b之間的界面IF1不被視覺地識別。舉例來說,第二貫穿電極224與第二焊盤214b可由相同的材料形成,以使得在第二貫穿電極224與第二焊盤214b之間不形成界面IF1。舉例來說,第二貫穿電極224以及第一互連圖案218的一部分可被設置成單個整體元件。第二貫穿電極224的寬度W2可大於第二基礎層222的厚度T2的1/10倍。換句話說,第二貫穿電極224可具有0.1或大於0.1的寬高比(寬度比高度)。第二互連圖案224可由導電材料(例如,金屬材料)中的至少一者形成或者包含導電材料中的至少一者。
第一中間基底200可被形成為具有前述結構特徵。
一般來說,可通過用導電材料填充穿過中間基底的基礎層的穿孔(penetration hole)來形成貫穿電極。此處,如果穿孔的寬高比小於0.1,則由於導電材料的潤濕性(wetting property),可能難以用導電材料填充穿孔。這將在製作方法的主題中更詳細地
進行闡述。
隨著半導體晶片按比例縮小,形成期望數目的互連線的難度越來越大。另外,中間基底中的電路圖案的數目越大,中間基底的面積越大。可使用使電路圖案的互連線的寬度以及貫穿電極的寬度減小的方法來減小中間基底的面積,但這可導致中間基底的厚度減小。在製作半導體封裝的製程期間,難以對薄的中間基底進行處理,且此外,薄的中間基底可能容易破裂或斷裂。相反,在其中中間基底的厚度增加的情況下,可能需要增加貫穿電極的寬度,且因此增加中間基底的面積。
根據本發明概念的實施例,貫穿電極216及224(或互連線214)可分別單獨形成在具有小厚度的第一子中間基底210及第二子中間基底220中。因此,可能可減小互連線214的寬度及貫穿電極216及224的寬度,且因此減小半導體封裝10的尺寸。另外,具有小厚度的第一子中間基底210與第二子中間基底220可被接合以形成相對厚的單個中間基底(例如,第一中間基底200),且在這種情況下,第一中間基底200可具有經改善的結構耐久性。
參照圖1及圖2A,第二中間基底300可設置在第一中間基底200上。第二中間基底300可安裝在第一中間基底200的第二子中間基底220上。舉例來說,第二中間基底300中的每一者可安裝在第二子中間基底220上,且可通過設置在第二中間基底300的底表面上的第二連接端子305連接到第二子中間基底220。
第二中間基底300中的每一者可包括第三基礎層302及
設置在第三基礎層302中的第三互連圖案304。為簡單起見,將闡述第二中間基底300中的僅一者作為實例。
第三基礎層302可設置在第一中間基底200上。第二中間基底300中的每一者可為矽基底或絕緣基底。舉例來說,第三基礎層302可包含矽(Si),或者可包含絕緣材料,例如藍寶石或聚合物。
第三互連圖案304可設置在第三基礎層302中。第三互連圖案304可為用於對所述至少一個半導體晶片400/500進行再分布的圖案,以下將對此進行闡述。舉例來說,第三互連圖案304的一部分可包括與封裝基底100的頂表面100a平行地延伸的電路互連線以及被設置成垂直穿過第三基礎層302的貫穿電極。第三互連圖案304的貫穿電極可具有0.1或大於0.1的寬高比。第三互連圖案304可由導電材料(例如,金屬材料)中的至少一者形成或者包含導電材料中的至少一者。第三互連圖案304的電路互連線與貫穿電極可構成電連接的再分布電路。
在其中設置多個第二中間基底300的情況下,可能可高效地為至少一個半導體晶片400/500構建再分布結構。舉例來說,在其中設置多個半導體晶片400/500的情況下,第二中間基底300可被用於為半導體晶片400/500中的每一者構建再分布結構,且第一中間基底200可被用於為第二中間基底300構建再分布結構。因此,即使在半導體封裝10中設置許多電子組件(例如,存在許多待安裝的晶片),也可能可容易地為互連線構建再分布結構。
與所示結構不同,第二中間基底300可被設置成單個元件。以下說明將參照其中設置多個第二中間基底300的實例。
在某些實施例中,第二中間基底300可被設置成與第一中間基底200接觸。舉例來說,如圖3及圖4中所示,第二中間基底300中的每一者的底表面302a(例如,與頂表面302b相對的表面)可與第一中間基底200的第二子中間基底220的頂表面222b接觸,且在下文中,這些表面可被稱為與第二基礎層222的頂表面222b相同的參考編號。此處,第三基礎層302可被設置成與第二基礎層222不同的元件,且在這種情況下,第三基礎層302與第二基礎層222之間的界面可被視覺地顯露出來。第三互連圖案304可在第三基礎層302的底表面302a上與第二子中間基底220的第二貫穿電極224接觸。此處,第三互連圖案304與第二貫穿電極224可具有連續的整體結構,且第三互連圖案304與第二貫穿電極224之間的界面IF2可不被視覺地顯露出來。舉例來說,第三互連圖案304的一部分以及第二貫穿電極224可被設置成單個元件。
如圖1及圖2A中所示,至少一個半導體晶片400/500可設置在第二中間基底300上。舉例來說,第一半導體晶片400及第二半導體晶片500可安裝在第二中間基底300上。此處,隨著需要增加,第一半導體晶片400及第二半導體晶片500中的每一者可設置有多個。第一半導體晶片400及第二半導體晶片500可分別通過設置在其底表面上的第一晶片端子405及第二晶片端子
505電連接到第二中間基底300。可通過第二中間基底300及第一中間基底200對第一半導體晶片400及第二半導體晶片500進行再分布。可首先通過多個第二中間基底300在小的區中對第一半導體晶片400及第二半導體晶片500中的每一者進行再分布,且然後可通過第一中間基底200額外進行再分布。因此,即使半導體封裝10中的第一半導體晶片400及第二半導體晶片500具有許多用於電連接路徑的端子或焊盤,但也可能可容易地構造用於第一半導體晶片400及第二半導體晶片500的再分布結構,並改善半導體封裝10的性能。
在其中設置多個第二中間基底300的情況下,第一半導體晶片400可被安裝在第二中間基底300中的一者上,或者可被安裝成與第二中間基底300中的至少一者交疊。舉例來說,當在平面圖中觀察時,第一半導體晶片400可被設置成與第二中間基底300中的一者完全交疊,或者可被設置成與所述多個第二中間基底300中的所有者交疊。此處,第二半導體晶片500可安裝在上面並未安裝第一半導體晶片400的第二中間基底300上,或者可與第一半導體晶片400一起安裝在第二中間基底300中的一者上。在其中第一半導體晶片400及第二半導體晶片500安裝在第二中間基底300中的一者上的情況下,第一半導體晶片400與第二半導體晶片500可通過第二中間基底300電連接到彼此。此處,第一半導體晶片400與第二半導體晶片500之間的電連接路徑可僅通過第二中間基底300形成,且在這種情況下,電連接路徑的
長度可為短的。這可使得有可能改善半導體封裝10的性能,並實現半導體封裝10的高速操作。
第一半導體晶片400與第二半導體晶片500可為不同種類的晶片。第一半導體晶片400可包括專用積體電路(application specific integrated circuit,ASIC)晶片。第一半導體晶片400可用作例如非記憶體晶片,例如應用處理器。在某些實施例中,第一半導體晶片400可為例如邏輯晶片或記憶體晶片。第二半導體晶片500可為例如記憶體晶片。舉例來說,記憶體晶片可為動態隨機存取記憶體(Dynamic Random Access Memory,DRAM)、反及快閃(NAND flash)、反或快閃(NOR flash)、相變隨機存取記憶體(Phase-Change Random Access Memory,PRAM)、電阻式隨機存取記憶體(Resistive Random Access Memory,ReRAM)或磁性隨機存取記憶體(Magnetic Random Access Memory,MRAM)晶片。在某些實施例中,第二半導體晶片500可包括其中堆疊有多個晶片的高帶寬記憶體(high bandwidth memory,HBM)裝置。
目前為止,已闡述了其中半導體封裝10具有不同種類的半導體晶片(例如,第一半導體晶片400與第二半導體晶片500)的實例,但本發明概念並不僅限於此實例。半導體封裝10可包括安裝在第二中間基底300上的一種或三種或多於三種半導體晶片。
在第一半導體晶片400及第二半導體晶片500上可設置有散熱器(heat radiator)600。舉例來說,散熱器600可被設置成與第一半導體晶片400的頂表面及第二半導體晶片500的頂表面
接觸。可使用黏合膜(未示出)將散熱器600貼合到第一半導體晶片400及第二半導體晶片500,且因此散熱器600可通過黏合膜彼此接觸。作為實例,黏合膜(未示出)可包含熱界面材料(thermal interface material,TIM),例如熱油脂。散熱器600可將在第一半導體晶片400及第二半導體晶片500中產生的熱量排出到外部。散熱器600可包括熱匯(heat sink)。
圖5是示出根據本發明概念的實施例的半導體封裝的剖視圖。圖6是示出根據本發明概念的實施例的第一中間基底且對應於圖5的部分“C”的放大圖。為了簡要說明起見,先前參照圖1到圖4闡述的元件可由相同的參考編號來標識,而不重複其重疊的說明。在本實施例的以下說明中將主要提及與圖1到圖4的實施例不同的技術特徵。
參照圖5及圖6,半導體封裝20可包括封裝基底100、安裝在封裝基底100上的第一中間基底200以及安裝在第一中間基底200上的至少一個半導體晶片400/500。
所述至少一個半導體晶片400/500可被放置在第一中間基底200上。舉例來說,第一半導體晶片400及第二半導體晶片500可安裝在第一中間基底200上。此處,隨著需要增加,第一半導體晶片400及第二半導體晶片500中的每一者可設置有多個。第一半導體晶片400及第二半導體晶片500可分別通過設置在其底表面上的第一晶片端子405及第二晶片端子505電連接到第一中間基底200。舉例來說,第一晶片端子405與第二晶片端子505
可耦合到第一中間基底200的第二子中間基底220的第二貫穿電極224。第一半導體晶片400及第二半導體晶片500可通過第一中間基底200進行再分布。
圖7到圖16是示出根據本發明概念的實施例的製作半導體封裝的方法的剖視圖。此處,圖7及圖8示出形成第一結構的方法。圖9到圖14示出形成第一中間基底的方法。
參照圖7,設置載體基底700。載體基底700可包括絕緣基底。在實施例中,載體基底700可包括柔性基底。在某些實施例中,載體基底700可為散熱器600(例如,參見圖1)。
在載體基底700上設置第一半導體晶片400及第二半導體晶片500。可例如通過黏合材料將第一半導體晶片400及第二半導體晶片500黏合到載體基底700。此處,可將第一半導體晶片400及第二半導體晶片500設置成使得其非有效(non-active)面面對載體基底700且其有效面背對載體基底700。舉例來說,可將第一半導體晶片400及第二半導體晶片500中的每一者的非有效面貼合到載體基底700,且可在載體基底700的向上方向上將第一晶片端子405及第二晶片端子505暴露到外部。
參照圖8,可在第一半導體晶片400及第二半導體晶片500上設置第二中間基底300。可將第二中間基底300安裝在第一半導體晶片400及第二半導體晶片500上,以形成第一結構ST1。第二中間基底300可電連接到第一半導體晶片400及第二半導體晶片500的第一晶片端子405及第二晶片端子505。此處,可將第
二中間基底300的第二連接端子305設置在與載體基底700相對的側處。
在某些實施例中,可不執行將第二中間基底300安裝在第一半導體晶片400及第二半導體晶片500上的製程。在這種情況下,第一結構ST1將不包括第二中間基底300,且因此,將製作參照圖5及圖6闡述的半導體封裝20。
以下說明將參照其中第一結構ST1被配置成包括第二中間基底300的實例。
參照圖9,將第二子中間基底220貼合到第一子中間基底210。舉例來說,第一子中間基底210及第二子中間基底220可為由半導體材料(例如矽(Si))製成的晶圓級基底。第一子中間基底210可包括第一基礎層212、第一互連圖案218及積體裝置230。第二子中間基底220可包括第二基礎層222及第二互連圖案224。圖9中的鋸切線SL表示第一子中間基底210及第二子中間基底220的上面將執行後續鋸切製程的區。在下文中,將參照圖10到圖14更詳細地闡述對第一子中間基底210與第二子中間基底220進行貼合的方法。圖10到圖14示出對第一子中間基底210與第二子中間基底220進行貼合的方法,且圖10到圖14為示出第一子中間基底210及第二子中間基底220的一部分的放大剖視圖。
參照圖10,可設置第二基礎層222。第二基礎層222可包含例如矽(Si)。
可在第二基礎層222中形成穿孔TH。可通過例如雷射鑽
孔製程、深反應離子蝕刻(deep reactive ion etching,DRIP)製程等形成穿孔TH。穿孔TH可從第二基礎層222的頂表面222b朝向底表面222a延伸。舉例來說,可將穿孔TH形成為垂直地穿過第二基礎層222。穿孔TH的寬度W3可大於第二基礎層222的厚度T2的1/10倍。換句話說,穿孔TH可具有0.1或大於0.1的寬高比。穿孔TH可界定第二基礎層222的其中將在後續製程中形成第二貫穿電極224(例如,參見圖11)的區。
參照圖11,可在穿孔TH中形成第二貫穿電極224。舉例來說,可形成導電材料來填充穿孔TH。在實施例中,可執行使用晶種層的電鍍方法,以用導電材料填充穿孔TH。在某些實施例中,可通過使用均厚沉積(blanket deposition)製程(例如,濺鍍、蒸鍍、噴射氣相沉積(jet vapor deposition)、旋塗、網板或模版印刷(screen or stencil printing)、浸漬、或拾取和放置/回流製程)中的至少一者來沉積導電材料。對於所述製程中的一些製程,可在後續步驟中進一步執行平坦化製程,例如研磨製程或蝕刻製程。填充穿孔TH的導電材料可形成第二子中間基底220的第二貫穿電極224。
在用導電材料填充穿孔TH的製程中,如果穿孔TH的寬度比第二基礎層222的厚度小1/10倍,則穿孔TH可能未被導電材料完全填充。圖12示出其中穿孔TH的寬高比小於0.1且穿孔TH未被導電材料完全填充的實例。詳細來說,可通過穿孔TH的上部開口或下部開口將導電材料供應到穿孔TH中。此處,由於導
電材料的潤濕特性,可通過穿孔TH的寬度W4來確定導電材料可被供應到的穿過深度。在其中穿孔TH的深度(即,第二基礎層222的厚度T3)大於穿過深度的情況下,引起第二貫穿電極224中的線切割(例如,開路)問題的氣隙AG可形成在第二貫穿電極224中。
根據本發明概念的實施例,例如貫穿電極216及224等電路圖案可分別單獨形成在薄的子中間基底210及220中,且因此,貫穿電極216及224可被形成為具有相對於子中間基底210與220的結合厚度小的寬度。這可能有利於增加半導體封裝10的集成密度。
在某些實施例中,可通過各種方法形成第二貫穿電極224。舉例來說,可在第二基礎層222中形成從第二基礎層222的頂表面222b在向內方向上延伸的孔。孔可從第二基礎層222的頂表面222b延伸,但是可與第二基礎層222的底表面222a間隔開。第二貫穿電極224可通過用導電材料填充孔來形成。此後,可對第二基礎層222的底表面222a執行研磨製程,以暴露出第二貫穿電極224。作為以上製程的結果,第二貫穿電極224的頂表面可與第二基礎層222的頂表面222b共面,且第二貫穿電極224的底表面可與第二基礎層222的底表面222a共面。在這種情況下,如果孔的寬高比如參照圖12所述小於0.1,則可能不容易用導電材料填充孔。
參照圖13,可設置第一子中間基底210。可通過在第一
基礎層212中形成第一互連圖案218及積體裝置230來形成第一子中間基底210。第一互連圖案218可包括電路互連線214及第一貫穿電極216(參見,例如圖2A)。電路互連線214的形成可包括:在構成第一基礎層212的矽層上形成導電材料;以及然後將導電材料圖案化。此後,可通過在矽層上額外沉積矽(Si)層來形成第一基礎層212。在某些實施例中,電路互連線214的形成可包括:在第一基礎層212的表面上形成導電材料;以及然後將導電材料圖案化。可將形成在第一基礎層212的表面上的第一互連圖案218的暴露在第一基礎層212的底表面212a上的一部分用作第一焊盤214a(例如,參見圖2A),且將第一互連圖案218的暴露在第一基礎層212的頂表面212b上的一部分用作第二焊盤214b(例如,參見圖2B)。可通過與形成第二貫穿電極224的方法相同的方法形成第一貫穿電極216。積體裝置230可與第一互連圖案218一起形成或者可單獨形成在第一基礎層212的表面上。
可在第一子中間基底210上設置第二子中間基底220。此處,上面形成有積體裝置230的第一子中間基底210的頂表面212b可面對第二子中間基底220的底表面222a。
參照圖14,第二子中間基底220可接觸第一子中間基底210。舉例來說,第一子中間基底210的第二焊盤214b可接觸第二子中間基底220的第二貫穿電極224。第一基礎層212可接觸第二基礎層222。
可將第一子中間基底210的第二焊盤214b結合到第二子
中間基底220的第二貫穿電極224。舉例來說,可將第二焊盤214b中的每一者與第二貫穿電極224中的對應的一者結合以形成單一整體。第二焊盤214b與第二貫穿電極224可以自然的方式彼此結合。詳細來說,第二焊盤214b與第二貫穿電極224可由相同的材料(例如,銅(Cu))形成,且在這種情況下,第二焊盤214b與第二貫穿電極224可通過銅-銅金屬之間的混合接合製程(例如,銅-銅混合接合)彼此結合,混合接合製程(hybrid bonding process)是由彼此接觸的第二焊盤214b與第二貫穿電極224的界面IF1處的表面活化而引起。此處,為易於進行第二焊盤214b與第二貫穿電極224之間的結合,在對第二焊盤214b與第二貫穿電極224進行結合的製程之前,可對第二焊盤214b的表面及第二貫穿電極224的表面執行表面活化製程。表面活化製程可包括等離子體製程。另外,為易於進行第二焊盤214b與第二貫穿電極224之間的結合,可向第二焊盤214b及第二貫穿電極224施加壓力及熱量。壓力可低於例如約30MPa,且熱量可通過將第二焊盤214b及第二貫穿電極224加熱到介於從約100℃到約500℃的範圍內的溫度的退火製程來提供。在某些實施例中,混合接合製程可在不同的壓力及溫度條件下執行。在其中第二焊盤214b與第二貫穿電極224彼此結合的情況下,第二焊盤214b與第二貫穿電極224之間的界面IF1可消失,以使得每一第二焊盤214b與相應的第二貫穿電極224形成單個整體件或結構。在某些情況下,第二焊盤214b與第二貫穿電極224之間的界面IF1可視覺地出現。
第一子中間基底210與第二子中間基底220可通過具有強的接合強度的金屬之間的接合而彼此結合,且因此,可能可改善在後續製程中將形成的第一中間基底200的結構穩定性。另外,第一子中間基底210與第二子中間基底220可彼此直接結合,而不需要額外的連接端子(例如,焊料球、焊料凸塊等)。這可使得有可能減小第一中間基底200的尺寸且改善第一中間基底200的結構穩定性。作為結合的結果,包括第二貫穿電極224及第一貫穿電極216的一對電連接的貫穿電極可具有相對於第一中間基底200的厚度小於0.1(例如,它可在0.05與0.1之間)的寬高比,所述第二貫穿電極224與第一貫穿電極216是整體件的一部分且被連接成通過第一中間基底200的厚度傳輸訊號。
參照圖15,可在第二子中間基底220上安裝第一結構ST1。可以倒裝晶片的方式安裝第一結構ST1。舉例來說,可使用第二中間基底300的第二連接端子305將第一結構ST1安裝在第二子中間基底220上。
在某些實施例中,第一結構ST1的安裝可以不同於倒裝晶片的方式的方式執行。舉例來說,第一結構ST1可以第二中間基底300的底表面與第二子中間基底220的頂表面接觸的方式設置在第二子中間基底220上。此處,第二子中間基底220的第二貫穿電極224可與第二中間基底300的第三互連圖案304的一部分接觸。第三互連圖案304與第二貫穿電極224可結合到彼此以形成單一整體。詳細來說,第三互連圖案304的一部分與第二貫
穿電極224可由相同的材料(例如,銅(Cu))形成,且在這種情況下,第三互連圖案304與第二貫穿電極224可通過銅-銅混合接合而彼此結合,這是由彼此接觸的第三互連圖案304與第二貫穿電極224之間的界面處的表面活化而引起。在這種情況下,可製作參照圖3及圖4闡述的半導體封裝。
在下文中,將基於圖15給出說明。
可移除載體基底700。在某些實施例中,如果載體基底700包括散熱器,則可不移除載體基底700。
參照圖16,可切割第一子中間基底210及第二子中間基底220,以將第一結構ST1彼此分離。舉例來說,可沿著圖15的鋸切線SL對第一子中間基底210及第二子中間基底220執行單一化製程。在這種情況下,可鋸切第一子中間基底210及第二子中間基底220以形成彼此分離的多個第一中間基底200。此處,可將第一結構ST1安裝在第一中間基底200中的每一者上,且它們可構成多個第二結構ST2。
返回參照圖1,可將第二結構ST2安裝在封裝基底100上。可以倒裝晶片的方式來安裝第二結構ST2。舉例來說,可在第一中間基底200的底表面上形成第一連接端子205,且然後,可使用第一連接端子205將第二結構ST2安裝在封裝基底100上。
此後,可將散熱器600貼合到第一半導體晶片400的頂表面及第二半導體晶片500的頂表面。可使用黏合膜(未示出)將散熱器600貼合到第一半導體晶片400及第二半導體晶片500。
作為實例,黏合膜(未示出)可包含熱界面材料(TIM),例如熱油脂。
可通過前述方法來製作半導體封裝10。
圖17及圖18是示出根據本發明概念的實施例的製作半導體封裝的方法的剖視圖。為了簡要說明起見,先前參照圖9到圖16闡述的元件可用相同的參考編號來標識,而不重複其重疊的說明。
參照圖17,可對圖9的所得結構執行鋸切製程。舉例來說,可沿著鋸切線SL對第一子中間基底210及第二子中間基底220進行鋸切,以形成彼此分離的多個第一中間基底200。
參照圖18,可在第一中間基底200上安裝第一結構ST1,且因此,可形成第二結構ST2。可以倒裝晶片的方式來安裝第一結構ST1。舉例來說,可使用第二中間基底300的第二連接端子305在第一中間基底200上安裝第一結構ST1。
此後,可移除載體基底700。在某些實施例中,如果載體基底700包括散熱器,則可不移除載體基底700。
返回參照圖1,可在封裝基底100上安裝第二結構ST2。可以倒裝晶片的方式(例如,使用如前所述的第一連接端子205)來安裝第二結構ST2。
此後,可將散熱器600貼合到第一半導體晶片400的頂表面及第二半導體晶片500的頂表面。可使用黏合膜(未示出)將散熱器600貼合到第一半導體晶片400及第二半導體晶片500。
可通過前述方法來製作半導體封裝10。
根據本發明概念的實施例,可能可減小半導體封裝中互連線的寬度及貫穿電極的寬度,且從而減小半導體封裝的尺寸。另外,可將兩個薄的子中間基底(例如,第一子中間基底與第二子中間基底)接合以形成相對厚的單個中間基底(例如,第一中間基底),且這可使得有可能改善第一中間基底的結構耐久性。
根據本發明概念的實施例,半導體封裝可包括第一中間基底,在第一中間基底中設置有積體裝置,且因此,可設置有性能高的第一中間基底。另外,不需要為在封裝基底或第一中間基底上安裝裝置提供額外的空間,且這可使得有可能減小半導體封裝的尺寸。
根據本發明概念的實施例,即使在半導體封裝中設置許多互連線,也可能可容易地為互連線構建再分布結構,且從而改善半導體封裝的性能。
儘管已具體示出並闡述了本發明概念的示例性實施例,然而所屬領域中的普通技術人員應理解,在不背離隨附權利要求書的精神及範圍的條件下可在本文中作出形式及細節上的各種改變。
應理解,儘管在本文中可使用“第一(first)”、“第二(second)”、“第三(third)”等用語來闡述各種元件、組件、區、層和/或區段,然而這些元件、組件、區、層和/或區段不應受限於這些用語。除非上下文中另外表明,否則例如作為命名傳統,
這些用語僅用於區分各個元件、組件、區、層或區段。因此,以下在說明書的一部分中論述的第一元件、組件、區、層或區段在說明書的另一部分中或權利要求書中可被稱為第二元件、組件、區、層或區段,而此並不背離本發明的教示。另外,在某些情況下,即使在說明書中未使用“第一”、“第二”等來闡述用語,但權利要求書中用語仍然可被稱為“第一”或“第二”,以便將不同的所提及的元件彼此區分開。
10:半導體封裝
100:封裝基底
100a:頂表面
100b:底表面
105:外側端子
200:第一中間基底
205:第一連接端子
210:第一子中間基底/子中間基底
220:第二子中間基底/子中間基底
230:積體裝置
300:第二中間基底
305:第二連接端子
400:第一半導體晶片/半導體晶片/晶片
405:第一晶片端子
500:第二半導體晶片/半導體晶片/晶片
505:第二晶片端子
600:散熱器
A:部分
Claims (23)
- 一種半導體封裝,包括:封裝基底;第一中間基底,安裝在所述封裝基底上;以及第一半導體晶片,設置在所述第一中間基底上,其中所述第一中間基底包括:第一基礎層;第二基礎層,設置在所述第一基礎層上;電路圖案,提供在所述第一基礎層及所述第二基礎層中的每一者中;以及積體裝置,嵌置在所述第一基礎層中且連接到所述電路圖案中的至少一個電路圖案,且其中所述第一基礎層的頂表面接觸所述第二基礎層的底表面,且所述第一基礎層及所述第二基礎層各自由矽形成。
- 如申請專利範圍第1項所述的半導體封裝,其中所述電路圖案包括:第一互連圖案,提供在所述第一基礎層中;以及貫穿電極,提供在所述第二基礎層中以垂直穿過所述第二基礎層,其中所述第一互連圖案與所述貫穿電極在所述第一基礎層與所述第二基礎層之間的界面處連接到彼此。
- 如申請專利範圍第2項所述的半導體封裝,其中所述第一互連圖案與所述貫穿電極構成由彼此相同的材料形成的單一整體。
- 如申請專利範圍第3項所述的半導體封裝,其中所述第一互連圖案及所述貫穿電極包含金屬材料。
- 如申請專利範圍第2項所述的半導體封裝,其中所述積體裝置包括第一導電層和第二導電層以及絕緣層,所述第一導電層與所述第二導電層在所述第一基礎層中彼此垂直地間隔開來,所述絕緣層設置在所述第一導電層與所述第二導電層之間,且所述第一導電層及所述第二導電層是所述第一互連圖案的部分。
- 如申請專利範圍第2項所述的半導體封裝,其中所述貫穿電極的寬高比介於從0.1到2.0的範圍中。
- 如申請專利範圍第1項所述的半導體封裝,更包括設置在所述第一中間基底上的至少一個第二中間基底,其中所述第一半導體晶片安裝在所述至少一個第二中間基底上。
- 如申請專利範圍第7項所述的半導體封裝,其中所述至少一個第二中間基底通過第一連接端子安裝在所述第一中間基底上,所述第一連接端子提供在所述至少一個第二中間基底與所述第一中間基底的所述第二基礎層之間。
- 如申請專利範圍第7項所述的半導體封裝,其中所述至少一個第二中間基底的底表面接觸所述第一中間基底的所述第二基礎層的頂表面,且所述至少一個第二中間基底的第二互連圖案在所述第一中間基底的所述第二基礎層與所述至少一個第二中間基底之間的界面處連接到所述第一中間基底的所述電路圖案中的一個電路圖案。
- 如申請專利範圍第9項所述的半導體封裝,其中所述第一中間基底的所述電路圖案中的一者與所述至少一個第二中間基底的所述第二互連圖案構成由相同材料形成的單一整體。
- 如申請專利範圍第7項所述的半導體封裝,其中所述至少一個第二中間基底提供為多個,且所述第一半導體晶片被設置成使得所述第一半導體晶片的一部分在平面圖中與所述第二中間基底中的兩個第二中間基底交疊且電連接到所述兩個第二中間基底中的每一者。
- 如申請專利範圍第1項所述的半導體封裝,更包括設置在所述第一中間基底上的第二半導體晶片,其中所述第一半導體晶片與所述第二半導體晶片通過提供在所述第二基礎層中的所述電路圖案電連接到彼此。
- 如申請專利範圍第1項所述的半導體封裝,其中所述積體裝置包括提供在所述第一基礎層中的電容器、電感器、電阻器或電晶體。
- 如申請專利範圍第1項所述的半導體封裝,其中所述第一中間基底更包括第二連接端子,所述第二連接端子設置在所述第一基礎層的底表面上且電連接到所述電路圖案,且所述第一中間基底通過所述第二連接端子安裝在所述封裝基底上。
- 如申請專利範圍第1項所述的半導體封裝,更包括設置在所述第一半導體晶片的頂表面上的熱匯。
- 一種半導體封裝,包括:封裝基底;第一矽中間件,設置在所述封裝基底上,所述第一矽中間件包括互連圖案;第二矽中間件,設置在所述第一矽中間件上,所述第二矽中間件包括貫穿電極;以及至少一個半導體晶片,安裝在所述第二矽中間件上,其中所述第二矽中間件與所述第一矽中間件的表面在邊界界面處連接到彼此,使得所述互連圖案與所述貫穿電極連接到彼此,且所述第一矽中間件更包括提供在所述第一矽中間件中的積體裝置。
- 如申請專利範圍第16項所述的半導體封裝,其中所述第一矽中間件的頂表面與所述第二矽中間件的底表面彼此接觸且彼此共面。
- 如申請專利範圍第16項所述的半導體封裝,其中所述第一矽中間件的所述互連圖案與所述第二矽中間件的所述貫穿電極構成由彼此相同的材料形成的單一整體。
- 如申請專利範圍第18項所述的半導體封裝,其中所述第一矽中間件的所述互連圖案及所述第二矽中間件的所述貫穿電極包含金屬材料。
- 如申請專利範圍第16項所述的半導體封裝,其中所述積體裝置包括在所述第一矽中間件中彼此垂直地間隔開來的第一導電層與第二導電層,且所述第一導電層及所述第二導電層是所述第一矽中間件的所述互連圖案的部分。
- 如申請專利範圍第16項所述的半導體封裝,更包括設置在所述第二矽中間件上的第二中間基底,其中所述至少一個半導體晶片安裝在所述第二中間基底上。
- 如申請專利範圍第21項所述的半導體封裝,其中所述第二中間基底通過提供在所述第二中間基底的底表面上的連接端子安裝在所述第二矽中間件上。
- 如申請專利範圍第21項所述的半導體封裝,其中所述第二中間基底的底表面接觸所述第二矽中間件的頂表面以將所述第二中間基底的互連圖案連接到所述第二矽中間件的所述貫穿電極。
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- 2019-09-25 US US16/583,051 patent/US11145637B2/en active Active
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US20150156862A1 (en) * | 2013-06-20 | 2015-06-04 | Commissariat A L'energie Atomique Et Aux Ene Alt | Method for producing a mechanically autonomous microelectronic device |
TW201709459A (zh) * | 2015-06-23 | 2017-03-01 | Invensas Corp | 具有內嵌跡線互連的層疊中介層和封裝 |
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US20230335540A1 (en) | 2023-10-19 |
US20210366884A1 (en) | 2021-11-25 |
US20200312826A1 (en) | 2020-10-01 |
CN111755433A (zh) | 2020-10-09 |
US11145637B2 (en) | 2021-10-12 |
TW202103290A (zh) | 2021-01-16 |
US11721679B2 (en) | 2023-08-08 |
KR102618460B1 (ko) | 2023-12-29 |
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