TWI743653B - 半導體封裝及其製造方法 - Google Patents
半導體封裝及其製造方法 Download PDFInfo
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- TWI743653B TWI743653B TW109101140A TW109101140A TWI743653B TW I743653 B TWI743653 B TW I743653B TW 109101140 A TW109101140 A TW 109101140A TW 109101140 A TW109101140 A TW 109101140A TW I743653 B TWI743653 B TW I743653B
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- die
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- layer
- rewiring
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Abstract
提供一種半導體封裝及其製造方法,半導體封裝包括多個第一晶粒、橫向密封第一晶粒的絕緣包封體、設置在絕緣包封體的部分上並至少部分與第一晶粒重疊的第二晶粒、以及設置在絕緣包封體上並電性連接到第一晶粒和第二晶粒的重佈線結構。第二晶粒的第二主動面面向第一晶粒的第一主動面。重佈線結構包括設置在第一晶粒附近的第一導通孔以及設置在第二晶粒附近的第二導通孔。第一和第二導通孔電性耦合並設置在第二晶粒和多個第一晶粒中的任一者之間的重佈線結構的區域中。第一導通孔與第二導通孔錯位成橫向偏移。
Description
本發明是有關於一種封裝結構及其製造方法,且特別是有關於一種具有錯位的導通孔的半導體封裝及其製造方法。
近年來,電子裝置對人類生活更為重要。為使電子裝置設計實現輕薄短小,半導體封裝技術不斷發展,試圖開發體積更小、重量更輕、積體度更高、在市場更具競爭性的產品。由於半導體封裝技術受到積體電路發展的高度影響,因此,隨著電子元件尺寸的變化,封裝技術的要求也變得越來越嚴苛。此外,半導體封裝中的重佈線層(redistribution layer,RDL)的導電特徵的尺寸減小,但是當受到外力(例如接合、焊接、回焊等製程)時,導電特徵對裂縫更為敏感。因此,如何在保持製程簡化和微型化的同時提供更加防止這種裂縫產生的半導體封裝已成為該領域研究人員的一大挑戰。
本發明提供一種半導體封裝及其製造方法,其提供電氣性能的改善和更高的可製造性。
本發明的一種半導體封裝包括並排設置的多個第一晶粒、橫向密封第一晶粒的絕緣包封體、設置在絕緣包封體的一部分上並至少部分地與第一晶粒重疊的第二晶粒、以及設置在絕緣包封體上並電性連接到第一晶粒和第二晶粒的重佈線結構。絕緣包封體的一部分將第一晶粒彼此分開。第二晶粒的第二主動面面向第一晶粒的第一主動面。重佈線結構包括設置在靠近第一晶粒的重佈線結構的第一層的第一導通孔,以及設置在靠近第二晶粒的重佈線結構的第二層的第二導通孔。第二層堆疊在第一層上。第一導通孔和第二導通孔電性耦合並設置在重佈線結構的區域中,該區域插設在第二晶粒的第二主動面和第一晶粒中的任一個的第一主動面之間,其中第一導通孔與第二導通孔錯位成橫向偏移。
在一些實施例中,半導體封裝還包括底膠,其設置在重佈線結構的第二層和第二晶粒的第二主動面之間。在一些實施例中,第一導通孔在第二晶粒的第二主動面上的第一正投影區域與第二導通孔在第二晶粒的第二主動面上的第二正投影區域完全不重疊。在一些實施例中,第一導通孔在第二晶粒的第二主動面上的第一正投影區域至少部分地與第二導通孔在第二晶粒的第二主動面上的第二正投影區域重疊。在一些實施例中,第一晶粒中的一者透過第一晶粒中的一者的第一接觸特徵的第一焊帽(solder cap)安裝在第一導電接墊上,第二晶粒透過第二晶粒的第二接觸特徵的第二焊帽安裝在第二導電接墊上。在一些實施例中,重佈線結構和第一晶粒之間的介面與重佈線結構和絕緣包封體之間的介面基本上齊平。
本發明的一種半導體封裝的製造方法至少包括以下步驟。在重佈線電路的第一表面上設置多個第一晶粒,其中重佈線電路包括第一導通孔以及第二導通孔,第一導通孔形成在靠近第一晶粒的重佈線電路的第一層,第二導通孔形成在堆疊於第一層上的重佈線電路的第二層,第一導通孔的中心是從第二導通孔的中心橫向偏移。在重佈線電路上形成絕緣包封體以密封第一晶粒,其中絕緣包封體的一部分形成在相鄰的第一晶粒之間。在與第一表面相對的重佈線電路的第二表面上設置第二晶粒,其中第二晶粒覆蓋絕緣包封體的部分並藉由重佈線電路電性耦合到第一晶粒。
在一些實施例中,半導體封裝的製造方法還包括在設置第二晶粒之前,在重佈線電路的第二表面的第二導通孔上形成多個導電接墊,其中在設置第二晶粒之後,將第二晶粒的多個接觸特徵接合到導電接墊。在一些實施例中,半導體封裝的製造方法還包括在設置第二晶粒後,在重佈線電路的第二表面和第二晶粒之間形成底膠。在一些實施例中,半導體封裝的製造方法還包括在設置第一晶粒時,在第一晶粒和重佈線電路的第一表面之間的第一介面上進行焊接製程,以及在設置第二晶粒時,在第二晶粒和重佈線電路的第二表面之間的第二介面上執行焊接製程。
本發明的一種半導體封裝的製造方法至少包括以下步驟。用絕緣包封體密封多個第一晶粒,其中所述絕緣包封體的一部分形成在兩個所述相鄰的第一晶粒之間。在所述第一晶粒和所述絕緣包封體上形成重佈線電路,其中所述重佈線電路包括第一導通孔及第二導通孔,所述第二導通孔形成在所述重佈線電路的第一層並連接到被所述絕緣包封體暴露出來的所述第一晶粒之任一者的接觸特徵,所述第二導通孔設置在堆疊於所述第一層的所述重佈線電路的第二層,所述第一導通孔的中心與所述第二導通孔的中心錯開一偏移量。在所述重佈線電路的所述第二層上設置第二晶粒以透過所述重佈線電路電性耦合到所述第一晶粒。
在一些實施例中,用第一晶粒密封第一晶粒的步驟包括形成絕緣材料以覆蓋第一晶粒,以及減薄絕緣材料以暴露出第一晶粒中的一者的接觸特徵的至少一部分。在一些實施例中,半導體封裝的製造方法還包括在設置第二晶粒後,在重佈線電路的第二層和第二晶粒之間形成底膠。
基於上述,由於半導體封裝包括以面對面(face-to-face)配置的方式所設置的第一晶粒和第二晶粒,藉以縮短它們之間的互連距離,並可實現半導體封裝的較低功耗和高頻寬。重佈線結構的第一和第二導通孔以錯位通孔(shifted-via)配置的方式設置,使得包括這種錯位通孔配置方式的半導體封裝能夠提供良好的可靠性並在製程和操作期間可產生較小的應力,從而消除裂縫和其他缺陷問題。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1A至圖1F是依照本發明的一些實施例的半導體封裝的製造方法的示意性剖視圖。參照圖1A,在臨時載體50上形成重佈線結構110。舉例來說,臨時載體50可由玻璃、塑料、金屬或其他合適材料所製成的晶圓級或面板級基板,只要該材料能承受後續製程並同時承載其上形成的結構即可。重佈線結構110可包括面向臨時載體50的第一表面110a以及與第一表面110a相對的第二表面110b。在一些實施例中,剝離層51可設置在重佈線結構110的第一表面110a和臨時載體50之間,以增強重佈線結構110在後續製程中從臨時載體50移除的可剝離性。舉例來說,剝離層51包括光熱轉換(light to heat conversion,LTHC)剝離層或其他合適的剝離層。在其他實施例中,省略了剝離層51,而重佈線結構110的第一表面110a可與臨時載體50直接接觸。
在一些實施例中,重佈線結構110包括交替堆疊在彼此上的多個圖案化介電層112和多個圖案化導電層114。圖案化導電層114中的每一層可包括導線、導電接墊、導通孔等。圖案化導電層114的任一層中的導線和導電接墊可形成在下面的圖案化介電層112的頂表面上。導通孔連接到導電接墊並可穿透圖案化介電層112,而使導通孔被圖案化介電層112橫向覆蓋。在一些實施例中,在形成圖案化導電層114之前先形成圖案化介電層112。在其他實施例中,圖案化導電層114在圖案化介電層112之前先形成。
在一些實施例中,重佈線結構110的形成包括至少以下步驟。可使用任何合適的沉積製程(例如旋塗(spin-coating)、層壓(lamination)等)在臨時載體50上形成介電材料(例如聚酰亞胺(polyimide,PI)、聚苯並噁唑(polybenzoxazole,PBO)、苯並環丁烯(benezocyclobutene,BCB)等)。接下來,藉由使用例如微影(即曝光和顯影製程)和蝕刻製程或其他合適的去除製程來去除一部分的介電材料,以在最下層Lv3形成具有開口的圖案化介電層112(即最下層的介電層D3)。
接下來,在最下層的介電層D3上和最下層的介電層D3的開口內共形地(conformally)形成晶種層(未示出),然後可在晶種層上形成具有開口的圖案化光阻層(未示出)。接下來,可藉由使用電鍍、濺射或其他合適的製程在晶種層上和圖案化光阻層的開口內形成導電材料層(例如銅、鋁、鎳、金、金屬合金等;未示出)。隨後,可去除圖案化光阻層,然後可去除未被導電材料層遮蔽的晶種層,以在最下層Lv3形成圖案化導電層114(即最下層的導電層C3)。舉例來說,最下層的導電層C3包括形成在最下層的介電層D3的開口內的導通孔CV3、連接到導通孔CV3並形成在最下層的介電層D3的頂表面上的導電接墊CP3、以及連接到導電接墊CP3並延伸以分佈在最下層的介電層D3的頂表面上的導線(未標記)。
可重複執行上述的步驟以獲得電路設計所需的多層重佈線結構110。舉例來說,具有開口的圖案化介電層112的中間層(即中間介電層D2)形成在最下層的介電層D3上,以覆蓋部分的最下層的導電層C3。舉例來說,中間介電層D2的開口暴露出至少一部分的導電接墊CP3,以便隨後形成的導通孔落在導電接墊CP3上。接下來,在中間層Lv2的圖案化導電層114(即中間導電層C2)形成在中間介電層D2上並穿透中間介電層D2。舉例來說,導線(未示出)和中間導電層C2的導電接墊CP2形成在中間介電層D2的頂表面上,而中間導電層C2的導通孔CV2垂直地延伸在導電接墊CP2和CP3之間。在一些實施例中,中間導電層C2的導通孔CV2中的每一者落在導電接墊CP3中的任一者上。
接下來,在中間介電層D2上形成具有開口的圖案化介電層112的最頂層(即最上層的介電層D1)以部分覆蓋中間導電層C2。舉例來說,最上層的介電層D1的開口將導電接墊CP2的至少一部分暴露出來。接下來,最上層Lv1的圖案化導電層114(即最上層的導電層C1)形成在最上層的介電層D1上並穿透最上層的介電層D1。舉例來說,最上層的導電層C1的導電接墊CP1及/或導線(未示出)形成在最上層的介電層D1的頂表面上藉以進一步進行電性連接,而最上層的導電層C1的導通孔CV1在導電接墊CP1和CP2之間延伸。應注意的是,為了清楚說明,圖1A示出的三層重佈線結構,但本發明並不限制重佈線結構110的層數。
繼續參照圖1A,導通孔CV1著落在連接到導通孔CV2的導電接墊CP2上,而導通孔CV2著落在連接到導通孔CV3的導電接墊CP3上。在一些實施例中,導通孔CV1、CV2和CV3彼此橫向偏移。舉例來說,不同層(例如Lv1、Lv2、Lv3)的導通孔(例如CV1、CV2、CV3)的中心(例如CT1、CT2、CT3)並未對齊。為了簡易說明,這裡的導通孔的這種佈置在本文中稱為錯位通孔(shifted-via)配置。在一些實施例中,導通孔CV1、CV2和CV3在從第二表面110b到第一表面110a的方向上逐漸變細。作為另一種選擇,導通孔CV1、CV2和CV3包括大致垂直的側壁。
在一些實施例中,形成在導通孔CV1的中心CT1和導通孔CV2的中心CT2之間的側向距離LD12大於零。形成在導通孔CV2的中心CT2和導通孔CV3的中心CT3之間的側向距離LD23可大於零。形成在導通孔CV1的中心CT1和導通孔CV3的中心CT3之間的側向距離LD13可大致等於零或大於零。在一些實施例中,側向距離LD13大於側向距離LD12及/或LD23。作為另一種選擇,側向距離LD13大致等於或小於側向的距離LD12及/或LD23。這些變化將在後續的其他實施例搭配附圖進行說明。
仍參照圖1A,重佈線結構110包括第一區R1、在第一區R1旁的第二區R2,在第一區R1旁並相對於第二區R2的第三區R3、以及在第二區R2旁並相對於第一區R1的第四區R4。在一些實施例中,第一區R1環繞第三區R3,第二區R2環繞第一區R1,並且第四區R4環繞第二區R2。最上層的導電層C1的導電接墊CP1可形成在第一區R1和第二區R2中,而導電接墊CP1可形成或可不形成在第三區R3和第四區R4中。在一些實施例中,第三區R3(或第四區R4)不含最上層的導電層C1的導電接墊CP1及/或最上層的導電層C1的導通孔CV1。在一些實施例中,最上層Lv1的導電接墊CP1被稱為接合墊(bond pad)。
在一些實施例中,形成在第一區R1中的導電接墊CP1的分佈密度比形成在第二區R2中的導電接墊CP1的分佈密度更密集。舉例來說,形成在第一區R1中的兩個相鄰的導電接墊CP1的中心CT1之間的第一間距P1小於形成在第二區R2中的兩個相鄰的導電接墊CP1的中心CT1之間的第二間距P2。舉例來說,第一區R1中的第一間距P1的範圍約為20μm至70μm。第二區R2中的第二間距P2可大於約70μm。舉例來說,第二間距P2約在100μm至約300μm的範圍。在一些實施例中,第二間距P2和第一間距P1的比率(P2/P1)可大於或大致等於1。作為另一種選擇,第一間距P1可大致等於或大於第二間距P2。
參照圖1B,多個第一晶粒120設置在重佈線結構110上並電性耦合到重佈線結構110。第一晶粒120可並排設置在重佈線結構110上並在空間上彼此隔開。舉例來說,每一個第一晶粒120包括面向重佈線結構110的第二表面110b的主動面120a、與主動面120a相對的背面120r、以及連接到主動面120a和背面120r的側壁120w。在一些實施例中,第一晶粒120包括半導體基底122、互連線結構124以及多個接觸特徵126,半導體基底122具有在其中形成的積體電路元件(未示出;例如主動元件(如電晶體)、被動元件(如電阻器、電容器)等),互連線結構124設置在半導體基底122上並電性耦合到積體電路元件,接觸特徵126設置在互連線結構124上並分佈在主動面120a。接觸特徵126可透過互連線結構124電性耦合到半導體基底122的積體電路元件,並可安裝在重佈線結構110上。
在一些實施例中,每一個接觸特徵126包括設置在柱體126a和設置在柱體126a的帽體(cap)126b。柱體126a的材料可以是或可包括銅、金、金屬合金等,而帽體126b的材料可由焊料或其他合適的導電材料製成。在一些實施例中,在主動面120a的接觸特徵126以不同的間距分佈。舉例來說,第一晶粒120中的任一者的第一間距P1基本上與第一區R1中的導電接墊CP1的第一間距P1相配,並且該第一晶粒120的第二間距P2基本上與第二區R2中的導電接墊CP1的第二間距P2相配。舉例來說,具有較大間距的接觸特徵126可作為電源及/或接地引腳,而具有較細間距的接觸特徵126可作為作訊號引腳。
繼續參照圖1B,可執行覆晶接合(flip-chip bonding)製程以將第一晶粒120安裝到重佈線結構110的第二表面110b上。舉例來說,在將第一晶粒120設置在重佈線結構110的第二表面110b上之後,具有第一間距P1的接觸特徵126與重佈線結構110的第一區R1中的第一間距P1大致對齊,並且第一晶粒120的具有第二間距P2的接觸特徵126與重佈線結構110的第二區R2中的第二間距P2大致對齊。在一些實施例中,包括焊料材料的接觸特徵126的帽體126b可有助於對齊接觸特徵126和導電接墊CP1。選擇性地進行焊接製程和回焊製程以增強第一晶粒120的接觸特徵126和重佈線結構110的導電接墊CP1之間的黏合性。在一些實施例中,在第一晶粒120的主動面120a和重佈線結構110的第二表面110b之間的間隙中形成底膠130,以至少橫向覆蓋接觸特徵126和導電接墊CP1,藉以增強接合的可靠性。作為另一種選擇,省略底膠130。應注意的是,覆晶接合製程僅是作為說明,可採用其他合適的接合製程。
參照圖1C,在重佈線結構110上形成絕緣包封體140以密封第一晶粒120和底膠130。絕緣包封體140可由例如環氧樹脂或其他合適的樹脂的絕緣材料形成。在一些實施例中,絕緣包封體140包括模塑化合物(molding compound)、模塑底膠(molding underfill)等,並可藉由模塑製程形成。舉例來說,在重佈線結構110的第二表面110b上形成絕緣材料以形成絕緣包封體140,使得第一晶粒120經由絕緣包封體140而包覆成型(over-molded),並且相鄰的第一晶粒120的側壁120w之間的間隙被絕緣包封體140所填充。可選擇性地藉由使用例如研磨、化學機械拋光(chemical-mechanical polishing,CMP)、蝕刻、其組合等方式來減薄絕緣包封體140以暴露出第一晶粒120的背面120r,從而減小結構的總體厚度。在執行減薄製程的這種實施例中,絕緣包封體140覆蓋第一晶粒120的側壁120w,並且絕緣包封體140的頂面140t大致上與第一晶粒120的背面120r齊平。在省略底膠130的其他實施例中,絕緣包封體140覆蓋第一晶粒120的側壁120w並延伸到第一晶粒120和重佈線結構110的第二表面110b之間的間隙中以橫向覆蓋第一晶粒120的接觸特徵126和重佈線結構110的導電接墊CP1。
繼續參照圖1C,在一些實施例中,在形成絕緣包封體140之後,移除臨時載體50而暴露出重佈線結構110的第一表面110a以便進一步進行處理。舉例來說,可對剝離層51施加外部能量(例如UV雷射、可見光或熱),而使重佈線結構110可與臨時載體50分離。可採用其他合適的去除製程來將臨時載體50與重佈線結構110分離。
參照圖1D,在一些實施例中,為了處理重佈線結構110的第一表面110a,圖1C中所示的結構可以上下翻轉然後設置在臨時載體60上。在一些實施例中,剝離層61可設置在臨時載體60和絕緣包封體140的頂面140t之間(在一些實施例中剝離層61設置在臨時載體60和絕緣包封體140的頂面140t與第一晶粒120的背面120r之間)以增強他們之間的可剝離性。臨時載體60和剝離層61的材料可與臨時載體50和剝離層51的材料類似,為了簡潔而省略細節描述。作為另一種選擇,可省略翻轉和附接製程。
繼續參照圖1D,在設置於臨時載體60上之後,在第一表面110a上形成重佈線結構110的多個第一導電接墊CP4和多個第二導電接墊CP5,以用於進一步的電性連接,舉例來說,在重佈線結構110的最下層的介電層D3上沉積並圖案化導電材料(例如銅、鎳、金等)等。舉例來說,銅層(未示出)物理性的連接到導通孔CV3,鎳層(未示出)形成在銅層上,金層(未示出)形成在鎳層上,使得鎳層可作為阻擋層以防止銅擴散到金層中並防止氧化作用發生。
第一導電接墊CP4可形成在重佈線結構110的中心區(例如第一區R1及/或第三區R3)中,並可物理性地和電性地連接到重佈線結構110的導通孔CV3。第二導電接墊CP5可形成在重佈線結構110的外圍區(例如第二區R2及/或第四區R4)中,並可物理性地和電性地連接到重佈線結構110。在一些實施例中,出於不同的安裝目的,第二導電接墊CP5的尺寸(如寬度或直徑)大於第一導電接墊CP4的尺寸(如寬度或直徑)。在一些實施例中,第一導電接墊CP4稱為接合墊。在一些實施例中,第二導電接墊CP5稱為用於植球製程的凸塊下金屬(under-ball metallurgy,UBM)接墊。
參照圖1E,藉由例如植球製程、電鍍製程或其他合適的製程在重佈線結構110的第二導電接墊CP5上形成多個導電端子150。在一些實施例中,導電端子150是焊球。根據設計要求,導電端子150可採用的其他可能的形式和形狀。選擇性地進行焊接製程和回焊製程以增強重佈線結構110的導電端子150和第二導電接墊CP5之間的黏合性。導電端子150可透過重佈線結構110電性耦合到第一晶粒120。在一些實施例中,藉由在形成導電端子150之前將外部能量施加到剝離層61來去除臨時載體60。可採用其他移除製程來移除臨時載體60。作為另一種選擇,在形成導電端子150之後移除臨時載體60。
參照圖1F,藉由例如覆晶接合製程或其他合適的接合製程將第二晶粒160設置在重佈線結構110的第一表面110a上。在一些實施例中,第二晶粒160包括半導體基底162、互連線結構164以及多個接觸特徵166,半導體基底162具有在其中形成的積體電路元件(未示出;如主動元件(如電晶體)、被動元件(如電阻器、電容器)等),互連線結構164設置在半導體基底162上並電性耦合到積體電路元件,多個接觸特徵166設置在互連線結構164上並分佈在主動面160a。接觸特徵166可透過互連線結構164電性耦合到半導體基底162的積體電路元件。導電端子150可包圍第二晶粒160。
在一些實施例中,接觸特徵166的間距基本上與形成在第三區R3和第一區R1中的第一導電接墊CP4的間距相配。第二晶粒160和第一晶粒120分別與形成在重佈線結構110的兩個相對的表面(如第一表面110a和第二表面110b)的第一導電接墊CP4和導電接墊CP1接合。在一些實施例中,在第二晶粒160的主動面160a和重佈線結構110的第一表面110a之間的間隙中形成底膠170,以至少橫向覆蓋接觸特徵166和導電接墊CP4,藉此增強接合的可靠性。
在一些實施例中,第一晶粒120和第二晶粒160是主動晶粒,並且第二晶粒160可執行與第一晶粒120不同的功能。舉例來說,第一晶粒120是記憶體晶粒(如DRAM、SRAM、揮發性或非揮發性存取記憶體晶粒等),而第二晶粒160是處理器晶粒(如系統單晶片(system on a chip,SoC))。在一些實施例中,第二晶粒160是專用積體電路(application specific integrated circuit,ASIC)晶粒。可採用其他類型或功能的晶粒,並不限於此。
在一些實施例中,前述製程在晶圓或面板級執行,並且在接合第二晶粒160與形成底膠170之後,可執行單體化(singulation)製程以形成多個半導體封裝SP1。舉例來說,切割工具(未示出)可沿著切劃線(未示出)切穿絕緣包封體140和重佈線結構110,以將結構彼此分開。到此為止,大致完成半導體封裝SP1的製程。
如圖1F所示,半導體封裝SP1包括並排設置的第一晶粒120、絕緣包封體140、第二晶粒160、重佈線結構110以及導電端子150,絕緣包封體140橫向密封第一晶粒120並將第一晶粒120彼此分開,第二晶粒160的主動面160a朝向第一晶粒120的主動面120a,重佈線結構110插設在第一晶粒120和第二晶粒160之間並與第一晶粒120和第二晶粒160電性連接,導電端子150圍繞第二晶粒160並電性耦合到第一晶粒120和第二晶粒160。在一些實施例中,第二晶粒160的電訊號(如箭頭所示)藉由第三區R3中的重佈線結構110的電路從導電端子150傳輸或傳輸到導電端子150,其中第三區R3對應於絕緣包封體140的一部分,絕緣包封體140的該部分在相鄰的第一晶粒120之間。
第二晶粒160以面對面的配置方式設置在相鄰的第一晶粒120之間的絕緣包封體140的該部分上,並且第二晶粒160至少部分的與第一晶粒120重疊。在一些實施例中,導通孔CV3和導通孔CV1都形成在重佈線結構110的第一區R1中,其中導通孔CV1電性耦合到導通孔CV3,並且第一區R1插設在第二晶粒160的第二主動面160a和第一晶粒120之任一者的第一主動面120a之間。導通孔CV3與導通孔CV1錯位,其中該導通孔CV3藉由第一導電接墊CP4連接到第二晶粒160的接觸特徵166中的任一者,該導通孔CV1透過導電接墊CP1連接到第一晶粒120的接觸特徵126中的任一個。
圖2是依照本發明的一些實施例的圖1F所繪的虛線框A的示意性放大圖。參照圖1F和圖2,導電接墊CP1和導通孔CV1形成在靠近第一晶粒120的重佈線結構110的最上層Lv1,其中導通孔CV1物理性的和電性的連接到導電接墊CP1。第一導電接墊CP4和導通孔CV3形成在靠近第二晶粒160的重佈線結構110的最下層Lv3,其中導通孔CV3物理性的和電性的連接到第一導電接墊CP4。導通孔CV3和第二晶粒160連接到第一導電接墊CP4的相對兩側。導通孔CV1與導通孔CV3橫向偏移或從導通孔CV3橫向偏移。第一晶粒120的電訊號(如箭頭所示)可透過導電接墊CP1從第二晶粒160傳輸或傳輸到第二晶粒160,其中導電接墊CP1連接到第一晶粒120的接觸特徵126、導通孔CV1、導通孔CV3、連接到第二晶粒160的接觸特徵166的第一導電接墊CP4、以及在它們之間物理性的和電性的連接的中間層的導電特徵(導電接墊CP2和CP3、導通孔CV2)。
當重佈線結構110受到機械及/或熱應力時,錯位通孔配置(例如導通孔CV1、CV2、CV3彼此偏移)可吸收或緩衝應力。相反地,如果導通孔(如導通孔CV1、CV2、CV3)垂直的對齊並堆疊在第一晶粒和第二晶粒之間,則重佈線結構的有這種配置的部分可能在操作期間產生大量的應力集中且形成裂縫的可能性更高。由於重佈線結構110的錯位通孔(例如導通孔CV1、CV2、CV3)形成在第一晶粒120和第二晶粒160的接觸特徵126和166之間,所以這種錯位通孔配置可以在加工和操作過程中為半導體封裝SP1提供良好的可靠性並產生較小的應力,從而消除裂縫和其他缺陷問題。應注意的是,圖2中所示的配置是示例性的,其他配置也是可能的。
圖3A是依照本發明的一些實施例的連接到第一晶粒和第二晶粒的重佈線結構的一部分的示意性剖視圖,圖3B是依照本發明的一些實施例的圖3A的虛線框B所繪的重佈線結構的不同層中的導通孔的示意性俯視圖。舉例來說,與圖2類似的圖3A繪示第一晶粒120和第二晶粒160之間的接合區的局部視圖。圖2和圖3A中所示的實施例之間的差異在於重佈線結構的配置。圖3B的俯視圖中所示的導通孔可視為是第二晶粒的主動面上的導通孔的正投影區域。應注意的是,為了便於說明和簡化說明,在圖3B中省略了一些元件(例如介電層、導電接墊、導線等)。
參照圖3A和圖3B,第一晶粒120的接觸特徵126A透過重佈線結構210的第一電路電性連接到第二晶粒160的接觸特徵166A,重佈線結構210的第一電路包括在不同層(Lv1、Lv2和Lv3)的導電接墊(P1a、P2a和P3a)和導通孔(V1a、V2a和V3a)以在第一晶粒120和第二晶粒160之間傳輸第一電訊號。舉例來說,接觸特徵126A接合到導電接墊P1a,從導電接墊P1a延伸的導通孔V1a著落在導電接墊P2a上,導通孔V2a從導電接墊P2a延伸並著落在導電接墊P3a上,導通孔V3a從導電接墊P3a延伸並連接到第一導電接墊CP4,第一導電接墊CP4連接到接觸特徵166A。
重佈線結構210的第一電路示出了每一層(Lv1、Lv2和Lv3)的導通孔(V1a,V2a和V3a)的偏移方向是相同的方向的例子。舉例來說,最下層Lv3的導通孔V3a的中心CT3和中間層Lv2的導通孔V2a的中心CT2在第一方向DN1上錯開一個偏移量LD32,並且導通孔V3a的中心CT3和最上層Lv1的導通孔V1a的中心CT1在第一方向DN1上錯開一個偏移量LD31。在中間層Lv2的導通孔V2a的中心CT2和最上層Lv1的導通孔V1a的中心CT1在第一方向DN1中錯開一個偏移量LD21。舉例來說,偏移量(例如LD31、LD32、LD21)是接觸特徵126A和126B之間的間距BP1的約0.5倍至約3倍。
第一方向DN1(例如x方向)、第二方向DN2(例如y方向)和第三方向DN3(例如z方向)可以彼此垂直。在其他實施例中,導通孔V1a的中心CT1在相反的方向上從導通孔V3a的中心CT3移位,該相反的方向是指相對於從中心CT3到導通孔V2a中心CT2的方向相反的方向。在一些實施例中,導通孔(V1a、V2a、V3a)的中心(CT1、CT2,CT3)在第一方向DN1上錯位,但可以在第二方向DN2上大致對齊。作為另一種選擇,導通孔的中心在第一方向DN1和第二方向DN2上皆為錯位,此情況將在後面的其他實施例中描述。舉例來說,不同層(如Lv2和Lv3)的導通孔(如V2a和V3a)並未對齊,但從俯視圖來看是彼此部分重疊的。不同層(如Lv2和Lv1)的導通孔(如V2a和V1a)從從俯視圖來看也可能是彼此完全不對齊也不重疊的。
繼續參照圖3A和圖3B,第一晶粒120的接觸特徵126B透過重佈線結構210的第二電路電性連接到第二晶粒160的接觸特徵166B,重佈線結構210的第二電路包括在不同層(Lv1、Lv2和Lv3)的導電接墊(P1b、P2b和P3b)和導通孔(V1b、V2b和V3b),以在第一晶粒120和第二晶粒160之間傳輸第二電訊號。第一電訊號和第二電訊號可以是相同的或不同的。舉例來說,接觸特徵126B接合到導電接墊P1b,從導電接墊P1b延伸的導通孔V1b著落在導電接墊P2b上,導通孔V2b從導電接墊P2b延伸並著落在導電接墊P3b上,導通孔V3b從導電接墊P3b延伸並連接到第一導電接墊CP4,第一導電接墊CP4連接到接觸特徵166B。
重佈線結構210的第二電路示出了堆疊的導通孔(V1b、V2b和V3b)的配置的示例。舉例來說,在如圖3B所示的俯視圖中,不同層(Lv1、Lv2和Lv3)的導通孔(V1b、V2b和V3b)的中心CT4在第一方向DN1和第二方向DN2兩者中基本對齊。為了便於說明,導通孔(V1b、V2b和V3b)的這種配置方式稱作堆疊通孔(stacked-via)配置。堆疊通孔配置可在重佈線結構210中佔據較少的空間,因此錯位通孔配置可搭配重佈線結構中的堆疊通孔配置以緩衝應力並能節省佈線空間。
圖4A是依照本發明的一些實施例的連接到第一晶粒和第二晶粒的重佈線結構的一部分的示意性剖視圖,圖4B是依照本發明的一些實施例的圖4A的虛線框C中所繪的重佈線結構的不同層中的導通孔的示意性俯視圖。舉例來說,與圖2類似的圖4A是繪示第一晶粒120和第二晶粒160之間的接合區的局部視圖。圖2和圖4A中所示的實施例之間的差異在於重佈線結構的配置。圖4B的俯視圖中所示的導通孔可視為是第二晶粒的主動面上的導通孔的正投影區域。應注意的是,為了便於說明和簡化說明,在圖4B中省略了一些元件(例如介電層、導電接墊、導線等)。
參考圖4A和圖4B,第一晶粒120的接觸特徵126C透過重佈線結構310的第一電路電性連接到第二晶粒160的接觸特徵166C,重佈線結構310包括在不同層(Lv1、Lv2和Lv3)的導電接墊(P1c、P2c和P3c)和導通孔(V1c、V2c和V3c),以用於在第一晶粒120和第二晶粒160之間傳輸第一電訊號。圖4A中所示的重佈線結構310的第一電路的配置類似於圖3A中所示的重佈線結構210的第一電路的配置,差異在於重佈線結構310的第一電路的導通孔(V1c、V2c和V3c)在第一方向DN1和第二方向DN2上都移位。
在一些實施例中,不同層(Lv1、Lv2和Lv3)的導通孔(V1c、V2c和V3c)從俯視圖來看彼此完全不對齊也不重疊。舉例來說,在中間層Lv2的導通孔V2c的中心CT2從最下層Lv3的導通孔V3c的中心CT3往第二方向DN2偏移一個垂直偏移量Y32以及往方向DN1’偏移一個水平偏移量X32,該方向DN1’是與第一方向DN1相反的方向。在最上層Lv1的導通孔V1a的中心CT1可在第一方向DN1上從導通孔V3a的中心CT3偏移一個水平偏移量X31並在第二方向DN2上偏移一個垂直偏移量Y31。舉例來說,水平偏移量(如X31、X32或X31和X32的組合)或垂直偏移量(如Y31、Y32或Y31和Y32的組合)是接觸特徵126C和126D之間的間距BP2的約0.5倍至約3倍。
繼續參照圖4A和圖4B,第一晶粒120的接觸特徵126D透過重佈線結構310的第二電路電性連接到第二晶粒160的接觸特徵166D,重佈線結構310的第二電路包括在不同層(Lv1、Lv2和Lv3)的導電接墊(P1d、P2d和P3d)和導通孔(V1d、V2d和V3d),以在第一晶粒120和第二晶粒160之間傳輸第二電訊號。圖4A所示的重佈線結構310的第二電路的配置類似於圖3A所示的重佈線結構210的第二電路的配置,差異在於在剖視圖中重佈線結構310的第二電路的導通孔(V1d、V2d和V3d)部分地堆疊在一起。舉例來說,如圖4B所示,類似於導通孔(V1c、V2c和V3c)的導通孔(V1d、V2d和V3d)在兩個維度上移位(例如在第一和第二方向上)。做為另一種選擇,不同層(Lv1、Lv2和Lv3)的導通孔(V1d、V2d和V3d)可以是未對齊的,但從俯視圖來看彼此是部分重疊的。有稍微偏移的導通孔(V1d,V2d和V3d)的配置方式可有助於佔用更少的空間並減少應力。
圖5A至圖5E是依照本發明的一些實施例的半導體封裝的製造方法的示意性剖視圖。參照圖5A,多個第一晶粒420分別設置在臨時載體50上。第一晶粒420可類似於圖1B所描述的第一晶粒120,差異在於分佈在第一晶粒420的主動面420a的接觸特徵426不含焊料。在一些實施例中,第一晶粒420的背面420r透過剝離層51接合到臨時載體50。作為另一種選擇,省略剝離層51。
參照圖5B,在臨時載體50上形成絕緣包封體440以橫向密封第一晶粒420。在一些實施例中,第一晶粒420被絕緣材料包覆成型,然後藉由例如研磨、化學機械拋光(CMP)、蝕刻等方式使絕緣材料變薄,直到暴露出第一晶粒420的接觸特徵426,以用於進一步的電性連接。接觸特徵426可以是或可以包括導電凸塊、導電接墊、導電球體等。絕緣包封體440的頂面440t可大致與第一晶粒420的接觸特徵426的頂面426t共面(coplanar)。絕緣包封體440的底面440b可與第一晶粒420的背面420r大致共面。
參照圖5C,重佈線結構410形成在絕緣包封體440的頂面440t和第一晶粒420的接觸特徵426的頂面426t上。在一些實施例中,重佈線結構410包括多個圖案化介電層412(例如最上層的介電層D1、中間介電層D2、最下層的介電層)和多個圖案化導電層414(例如最上層的導電層C1、中間導電層C2、最下層的導電層)交替地彼此堆疊。每一層的圖案化導電層414可包括導線、導電接墊、導通孔等。在圖案化導電層414的任一層的導線和膽電接電可形成在下面的圖案化介電層412的頂面上。導通孔連接到導電接墊並可穿透圖案化介電層412,使導通孔被圖案化介電層112橫向覆蓋。在一些實施例中,圖案化介電層412在形成圖案化導電層414之前就先形成。在其他實施例中,圖案化導電層414在圖案化的介電層412形成之前就先形成。重佈線結構410的材料和形成製程可類似於圖1A所描述的重佈線結構110的材料和形成製程。
在示例性實施例中,形成重佈線結構410包括至少以下步驟。在絕緣包封體440和第一晶粒420上形成介電材料,然後去除一部分介電材料以形成最下層的介電層D3,其中開口暴露出接觸特徵426的頂面426t的至少一部分。接下來,形成導電材料並圖案化導電材料,以形成包括導電接墊CP3和導通孔CV3的最下層的導電層C3。導通孔CV3可形成在最下層的介電層D3的開口中,以物理性地和電性地連接到第一晶粒420的接觸特徵426。導電接墊CP3可物理性地和電性地連接到與接觸特徵426相對的導通孔CV3。接下來,可在最下層的介電層D3上形成具有開口的中間介電層D2,中間介電層D2的開口可暴露出至少一部分的導電接墊CP3。隨後,在中間介電層D2上和中間介電層D2的開口中形成包括導電接墊CP2和導通孔CV2的中間導電層C2。類似地,最上層的介電層D1和最上層的導電層C1形成在中間介電層D2和中間導電層C2上。
在一些實施例中,每一層圖案化導電層414的導通孔(例如CV1、CV2、CV3)朝向第一晶粒420逐漸變細。作為另一種選擇,導通孔可具有大致垂直的側壁。圖案化導電層414中的任一層的導通孔(例如CV1、CV2、CV3)可從相鄰一層的圖案化導電層414中對應的導通孔橫向偏移。應注意的是,圖5A所示的三層重佈線結構僅為說明目的,本發明並不限制重佈線結構410的層數。重佈線結構410的配置類似於重佈線結構110的配置或本文中所描述的各種變型。應理解的是,重佈線結構410可由組合方案的修改或圖1A、圖3A和圖4A所討論的配置的變化而形成,為了簡潔而省略了詳細描述。
參照圖5D,導電端子150形成在最上層的導電層C1的導電接墊CP1上。導電端子150的材料和形成製程可類似於圖1E所描述的導電端子150的材料和形成製程。在形成導電端子150之後,選擇性地將臨時載體50移除以暴露出絕緣包封體440的底面440b(在一些實施例中,也暴露出第一晶粒420的背面420r)。
參照圖5E,第二晶粒160安裝在重佈線結構410上以電性耦合到第一晶粒420。舉例來說,執行覆晶接合以將接觸特徵166接合到重佈線結構410的導電接墊CP1。底膠170可形成在第二晶粒160的主動面160a和重佈線結構410之間,以增強第二晶粒160和重佈線結構410之間的接合。隨後,可執行單體化製程以形成多個半導體封裝SP2。至此便大致完成半導體封裝SP2的製程。
半導體封裝SP2和圖1F所示的半導體封裝SP1由不同的製程順序所製造。半導體封裝SP1和SP2之間的結構差異包括半導體封裝SP2的第一晶粒420的接觸特徵426並不含焊料,並且半導體封裝SP2的重佈線結構410的導通孔CV3是直接連接到接觸特徵426,因此第一晶粒420和重佈線結構410之間的介面並沒有焊料。由於半導體封裝SP2的重佈線結構410是在密封第一晶粒420之後才形成在第一晶粒420上,因此導通孔(例如CV1、CV2、CV3)是從第二晶粒160朝向第一晶粒420逐漸變細。另一方面,半導體封裝SP1的重佈線結構110是在安裝第一晶粒120之前便形成,因此導通孔(例如CV1、CV2、CV3)從第一晶粒120朝向第二晶粒160逐漸變細。
本文所描述的半導體封裝可安裝到外部裝置上,該外部裝置包括封裝基板、印刷電路板、系統板、母板等。舉例來說,半導體封裝的第一晶粒和第二晶粒的電訊號是藉由半導體封裝的導電端子傳輸到外部裝置。半導體封裝也可能採用其他的應用。
綜上所述,由於半導體封裝包括以面對面配置設置的第一晶粒和第二晶粒以縮短兩者之間的互連距離,因此可以實現半導體封裝的較低功耗和高頻寬。重佈線結構的第一和第二導通孔以錯位通孔配置的方式設置,使得具有這種錯位通孔配置的半導體封裝可提供良好的可靠性並在製程和操作期間產生較小的應力,從而消除裂縫和其他缺陷問題。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
50、60:臨時載體
51、61:剝離層
110、210、310、410:重佈線結構
110a:第一表面
110b:第二表面
112、412:圖案化介電層
114、414:圖案化導電層
120、420:第一晶粒
120a、160a、420a:主動面
120r、420r:背面
120w:側壁
122、162:半導體基底
124、164:互連結構
126、126A、126B、126C、126D、166、166A、166B、166C、166D、426:接觸特徵
126a:柱體
126b:帽體
130、170:底膠
140、440:絕緣包封體
140t、426t、440t:頂面
150:導電端子
160:第二晶粒
440b:底面
A、B、C:虛線框
BP1、BP2:間距
C1:最上層的導電層
C2:中間導電層
C3:最下層的導電層
CP1、CP2、CP3、P1a、P1b、P2a、P2b、P3a、P3b:導電接墊
CP4:第一導電接墊
CP5:第二導電接墊
CT1、CT2、CT3、CT4:中心
CV1、CV2、CV3、V1a、V1b、V2a、V2b、V2c、V3a、V3b、V3c:導通孔
D1:最上層的介電層
DN1:第一方向
DN2:第二方向
DN3:第三方向
DN1’:方向
D2:中間介電層
D3:最下層的介電層
LD12、LD13、LD23:側向距離
LD21、LD31、LD32:偏移量
Lv1:最上層
Lv2:中間層
Lv3:最下層
R1:第一區
R2:第二區
R3:第三區
R4:第四區
SP1、SP2:半導體封裝
X31、X32:水平偏移量
Y31、Y32:垂直偏移量
圖1A至圖1F是依照本發明的一些實施例的半導體封裝的製造方法的示意性剖視圖。
圖2是依照本發明的一些實施例的圖1F所繪的虛線框A的示意性放大圖。
圖3A是依照本發明的一些實施例的連接到第一晶粒和第二晶粒的重佈線結構的一部分的示意性剖視圖。
圖3B是依照本發明的一些實施例的圖3A的虛線框B所繪的重佈線結構的不同層中的導通孔的示意性俯視圖。
圖4A是依照本發明的一些實施例的連接到第一晶粒和第二晶粒的重佈線結構的一部分的示意性剖視圖。
圖4B是依照本發明的一些實施例的圖4A的虛線框C中所繪的重佈線結構的不同層中的導通孔的示意性俯視圖。
圖5A至圖5E是依照本發明的一些實施例的半導體封裝的製造方法的示意性剖視圖。
110:重佈線結構
110a:第一表面
110b:第二表面
120:第一晶粒
140:絕緣包封體
150:導電端子
160:第二晶粒
160a:主動面
162:半導體基底
164:互連結構
166:接觸特徵
170:底膠
A:虛線框
CP4:第一導電接墊
CV1、CV2、CV3:導通孔
R1:第一區
R3:第三區
Claims (6)
- 一種半導體封裝,包括:多個第一晶粒,並排設置;絕緣包封體,橫向密封所述第一晶粒,所述絕緣包封體的一部分將所述第一晶粒彼此分開;第二晶粒,設置在所述絕緣包封體的所述部分上並至少部分地重疊所述第一晶粒,所述第二晶粒的第二主動面面向所述第一晶粒的第一主動面;重佈線結構,設置在所述絕緣包封體上並電性連接到所述第一晶粒和所述第二晶粒,所述重佈線結構包括:第一導通孔,設置在靠近所述第一晶粒的所述重佈線結構的第一層;以及第二導通孔,設置在靠近所述第二晶粒的所述重佈線結構第二層,所述第二層堆疊在所述第一層上,所述第一導通孔和所述第二導通孔電性耦合並設置在所述重佈線結構的區域,所述區域插設於所述第二晶粒的所述第二主動面和所述第一晶粒中的任一者的所述第一主動面之間,其中所述第一導通孔與所述第二導通孔錯位成橫向偏移;以及多個導電端子,設置在所述重佈線結構的所述第二層上並圍繞所述第二晶粒且所述導電端子電性連接到所述第一晶粒和所述第二晶粒,其中所述第二晶粒的訊號透過所述重佈線結構的電路從所述導電端子傳輸或傳輸到所述導電端子,所述重佈線結構的 所述電路設置在對應於所述絕緣包封體的所述部分,其中各所述第一晶粒包括設置在各所述第一晶粒的所述第一主動面上的多個接觸特徵,其中位於所述重佈線結構的所述區域中並與所述第二晶粒重疊的相鄰所述接觸特徵之間具有第一間距,位於所述重佈線結構的所述區域之外並與所述多個導電端子重疊的相鄰所述接觸特徵之間具有第二間距,其中所述第一間距小於所述第二間距。
- 如申請專利範圍第1項所述的半導體封裝,其中所述重佈線結構還包括:第一導電接墊,設置在所述重佈線結構的第一表面上,所述第一導通孔從所述第一導電接墊延伸,所述第一晶粒中的所述一者安裝在所述第一導電接墊上;以及第二導電接墊,連接到所述第二導通孔並設置在與所述第一表面相對的所述重佈線結構的第二表面上,所述第二晶粒安裝在所述第二導電接墊上。
- 如申請專利範圍第1項所述的半導體封裝,其中所述重佈線結構的所述第一層的所述第一導通孔直接連接到所述第一晶粒中的所述一者的在所述第一主動面上的所述接觸特徵。
- 如申請專利範圍第1項所述的半導體封裝,其中所述重佈線結構還包括:第三導通孔,設置在所述第一層的所述第一導通孔旁邊;以及第四導通孔,設置在所述第二層的所述第二導通孔旁邊,所 述第三導通孔的中心基本上與所述第四導通孔的中心對齊。
- 一種半導體封裝的製造方法,包括:在重佈線電路的第一表面上設置多個第一晶粒,其中所述重佈線電路包括第一導通孔以及第二導通孔,所述第一導通孔形成在靠近所述第一晶粒的所述重佈線電路的第一層,所述第二導通孔形成在堆疊於所述第一層上的所述重佈線電路的第二層,所述第一導通孔的中心是從所述第二導通孔的中心橫向偏移;在所述重佈線電路上形成絕緣包封體以密封所述第一晶粒,其中所述絕緣包封體的一部分形成在相鄰的所述第一晶粒之間;以及在與所述第一表面相對的所述重佈線電路的第二表面上設置第二晶粒,其中所述第二晶粒覆蓋所述絕緣包封體的所述部分並藉由所述重佈線電路電性耦合到所述第一晶粒,且所述第二晶粒至少部分地重疊所述第一晶粒,其中在設置所述第二晶粒之前,在所述重佈線電路的導電接墊上形成多個導電端子,且在設置所述第二晶粒之後,所述第二晶粒被所述導電端子包圍並透過所述重佈線電路電性耦合到所述導電端子,其中各所述第一晶粒包括設置在各所述第一晶粒的第一主動面上的多個接觸特徵,其中與所述第二晶粒重疊的相鄰所述接觸特徵之間具有第一間距,與所述多個導電端子重疊的相鄰所述接觸特徵之間具有第二間距,其中所述第一間距小於所述第二間距。
- 一種半導體封裝的製造方法,包括:用絕緣包封體密封多個第一晶粒,其中所述絕緣包封體的一部分形成在兩個所述相鄰的第一晶粒之間;在所述第一晶粒和所述絕緣包封體上形成重佈線電路,其中所述重佈線電路包括第一導通孔及第二導通孔,所述第一導通孔形成在所述重佈線電路的第一層並連接到被所述絕緣包封體暴露出來的所述第一晶粒之任一者的接觸特徵,所述第二導通孔設置在堆疊於所述第一層的所述重佈線電路的第二層,所述第一導通孔的中心與所述第二導通孔的中心錯開一偏移量;以及在所述重佈線電路的所述第二層上設置第二晶粒以透過所述重佈線電路電性耦合到所述第一晶粒,其中在設置所述第二晶粒之前,在所述重佈線電路的所述第二層上形成多個導電端子,且在設置所述第二晶粒之後,所述第二晶粒被所述導電端子包圍並透過所述重佈線電路電性耦合到所述導電端子,其中所述第二晶粒至少部分地重疊所述第一晶粒,且與所述第二晶粒重疊的相鄰所述接觸特徵之間具有第一間距,與所述多個導電端子重疊的相鄰所述接觸特徵之間具有第二間距,其中所述第一間距小於所述第二間距。
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CN111599768A (zh) | 2020-08-28 |
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TW202032726A (zh) | 2020-09-01 |
US20200273803A1 (en) | 2020-08-27 |
US20200273829A1 (en) | 2020-08-27 |
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CN111599795B (zh) | 2022-07-05 |
CN111599795A (zh) | 2020-08-28 |
TWI717813B (zh) | 2021-02-01 |
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