TWI740569B - 配線基板及半導體裝置 - Google Patents

配線基板及半導體裝置 Download PDF

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TWI740569B
TWI740569B TW109123224A TW109123224A TWI740569B TW I740569 B TWI740569 B TW I740569B TW 109123224 A TW109123224 A TW 109123224A TW 109123224 A TW109123224 A TW 109123224A TW I740569 B TWI740569 B TW I740569B
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wiring
layer
speed
signal
pad
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TW202137842A (zh
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尾山幸史
中村三昌
佐野雄一
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日商鎧俠股份有限公司
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Abstract

本發明係一種配線基板，其具有：第1配線層，其配置有高速配線；第2配線層，其配置有傳送較上述高速配線慢之信號之信號配線；及第3配線層，其配置於上述第1配線層與上述第2配線層之間，包含電源配線或/及接地配線；且去除上述第1配線層之焊盤與上述信號配線不重疊之部分之上述電源配線或/及接地配線，將上述第1配線層之焊盤與上述信號配線重疊之部分之上述電源配線或/及接地配線以與上述信號配線重疊之方式配置。

Description

配線基板及半導體裝置
本發明之實施方式係關於一種配線基板及半導體裝置。
為了實現半導體裝置之小型化、高速化、高功能化等，於1個封裝內積層複數個半導體晶片並密封之構造之半導體記憶裝置等半導體封裝已實用化。半導體記憶裝置例如具備如下構造：於配線基板上利用FOD(Film On Device)材填埋控制器晶片並進行接著，且於FOD材上多段積層記憶體晶片。
於如上所述之半導體封裝中，使用形成有複數個配線層之多層配線基板作為配線基板，但要求降低各層配線間之雜訊影響。為了應對此種要求，於配線層與配線層之間介置接地配線等而製成雜訊屏蔽配線。
然而，於設置有PCIe(Peripheral Component Interconnect Express，外圍組件互連高速)等高速配線之配線基板中，存在接地配線等雜訊屏蔽配線與高速配線之電容耦合變大而導致電氣特性惡化之問題。
一實施方式提供一種能夠減輕配線層間之雜訊影響且抑制電容耦合之配線基板及半導體裝置。
實施方式之配線基板具有：第1配線層，其配置有高速配線；第2配線層，其相對於上述第1配線層平行，且配置有傳送較上述高速配線慢之信號之信號配線；及第3配線層，其配置於上述第1配線層與上述第2配線層之間，包含為屏蔽上述第1配線層與上述第2配線層之間之雜訊而設置之電源配線或/及接地配線；且除去上述第1配線層之焊盤與上述信號配線不重疊之部分之上述電源配線或接地配線，將上述第1配線層之焊盤與上述信號配線重疊之部分之上述電源配線或接地配線以與上述信號配線重疊之方式配置。
根據上述構成，可提供一種能夠減輕配線層間之雜訊影響且抑制電容耦合之配線基板及半導體裝置。
1:半導體封裝
2:配線基板
2a:第1面
2b:第2面
3:第1半導體晶片
4:第1接著層
5:第2半導體晶片
6:第3半導體晶片
7:積層體
8:密封樹脂層
9:配線層
10:配線層
11:接合線
12:接合線
20:第1層高速配線
20a:高速配線焊盤
20c:第2層高速配線
21:第1配線層
22:第2層信號配線
22a:信號配線焊盤
22b:第1層信號配線
23:第2配線層
24:第3配線層
25:電源配線
26:接地配線
28:通孔
圖1係表示實施方式之半導體裝置之構成之剖視圖。
圖2係表示實施方式之配線基板之主要部分構成之剖視圖。
圖3係表示實施方式之配線基板之主要部分構成之剖視圖。
圖4係表示實施方式之配線基板之主要部分構成之俯視圖。
圖5係實施方式之配線基板之第1配線層之配線圖案之平面模式圖。
圖6係實施方式之配線基板之第2配線層之配線圖案之平面模式圖。
以下，參照實施方式之圖式進行說明。再者，於各圖式中，存在對實質上相同之構成部位標註相同之符號並部分省略其說明之情況。圖式為模式圖，存在厚度與平面尺寸之關係、各部之厚度之較率等與實物不同之情況。說明中表示上下等方向之用語於無特別明記之情形時表示以下述基板之半導體晶片搭載面為上時之相對方向，有時與以重力加速度方向為基準之實際方向不同。
圖1係表示實施方式之半導體裝置(半導體封裝)之剖視圖。圖1所示之半導體封裝1具備：配線基板2、搭載於配線基板2上之第1半導體晶片3、填埋第1半導體晶片3且接著於配線基板2之第1接著層(FOD)4、與第1接著層4接著且固定於不具備電極之第2半導體晶片5上之複數個第3半導體晶片6之積層體7、及以將第1半導體晶片3或第3半導體晶片6之積層體7等密封之方式設置於配線基板2上之密封樹脂層8。第2半導體晶片5為間隔基板且使用矽晶圓，但另外亦可將聚醯亞胺等樹脂或玻璃等之板用作間隔基板。
配線基板2例如具有由設置於絕緣性樹脂基板或絕緣性陶瓷基板等之表面之配線層9或設置於內部之配線層10等構成之配線網。作為絕緣性材料，具體而言有玻璃-環氧樹脂複合材、玻璃、聚醯亞胺樹脂、矽氧化物、矽氮化物等絕緣材料。配線層9、10例如由銅或銅合金、金或金合金等、銀或銀合金、鋁、鎢、鈦、鎳等金屬材料構成。配線基板2具有成為外部端子之形成面等之第1面2a、及成為半導體晶片3、5、6之搭載面之 第2面2b。
於配線基板2之第2面2b上，搭載有第1半導體晶片3，第1半導體晶片3填埋於第1接著層(FOD)4內且接著於配線基板2之晶片搭載區域。作為第1半導體晶片3，例如可列舉於用作第3半導體晶片6之半導體記憶體晶片與外部設備之間收發數位信號之控制器晶片或接口晶片、邏輯晶片、RF(radio frequency，射頻)晶片等系統LSI(Large Scale Integration，大規模積體電路)晶片，但並不限定於此。
第1半導體晶片3之電極(未圖示)經由接合線11而與配線基板2之配線層9電連接。藉由將控制器晶片等第1半導體晶片3直接搭載於配線基板2上，可縮短第1半導體晶片3與配線基板2之間之配線長。藉此，謀求提高第1半導體晶片3與配線基板2之間之信號傳輸速度等，能夠應對半導體封裝1之高速化。進而，由於第1半導體晶片3填埋於第1接著層4內，故而不會降低第3半導體晶片6相對於配線基板2之搭載性，另外亦不會妨礙封裝尺寸之小型化等。因此，能夠提供小型且應對高速元件之半導體封裝1。
一般而言，控制器晶片等第1半導體晶片3之外形形狀與半導體記憶體晶片等第3半導體晶片6之外形形狀相比較小。因此，將搭載於配線基板2上之第1半導體晶片3填埋於第1接著層4內，然後於第1接著層4上積層並搭載複數個第3半導體晶片6。作為第3半導體晶片6之具體例，可列舉NAND(Not And，與非)型快閃記憶體般之半導體記憶體晶片，但並不限定於此。於本實施方式中，將4個半導體記憶體晶片作為第3半導體晶片6 積層並搭載。再者，第3半導體晶片6之積層數並不限定為4段。
搭載於第1接著層4上之複數個第3半導體晶片6中，第1段至第4段為止之第3半導體晶片6以各自之電極露出之方式，於第1方向(圖中為紙面右方向)上使排列電極之端部錯開地積層成階梯狀。
複數個第3半導體晶片6中第1段之第3半導體晶片6固定於不具備電極之第2半導體晶片5上。第2半導體晶片5經由第1接著層4而固定於第1半導體晶片3之上。第1接著層4使用普通之DAF(Die Attach Film，晶粒黏接膜)等接著劑。第3半導體晶片6利用於圖1中省略了圖示之DAF等接著劑，固定於位於下側之第2半導體晶片5或第3半導體晶片6。第3半導體晶片6之電極(未圖示)經由接合線12而與配線基板2之配線層9電連接。關於電氣特性或信號特性相等之電極焊墊，能夠將配線基板2之配線層9與複數個第3半導體晶片6之電極焊墊利用接合線12依次連接。即，第1段至第4段之第3半導體晶片6之電極利用接合線12依次連接，第1段之第3半導體晶片6之電極與配線基板2之配線層9利用接合線12連接。半導體晶片之厚度例如為30μm~100μm。
於配線基板2之第2面2b上，以將第1半導體晶片3或第3半導體晶片6之積層體7與接合線11、12一起密封之方式，將使用環氧樹脂等絕緣樹脂之密封樹脂層8例如模塑成形。藉由該等構成要素，構成實施方式之半導體封裝1。
接下來，參照圖2~圖6對半導體封裝1之配線基板2之構成進行說明。如圖2、3所示，配線基板2具有第1配線層21、第2配線層23、及第3配線層24。第1配線層21、第2配線層23、及第3配線層24分別大致平行。
圖5係第1配線層21中之配線圖案之平面模式圖。於第1配線層21，設置有高速配線焊盤20a、連接於高速配線焊盤20a之第1層高速配線20、信號配線焊盤22a、連接於信號配線焊盤22a之第1層信號配線22b、電源用焊盤X及接地用焊盤Y。各配線經由通孔28而將第1配線層21、第2配線層23、及第3配線層24之間連接。於I部分，自高速配線焊盤20a經由通孔將高速配線連接於第2配線層23。於II部分，第1層高速配線20自高速配線焊盤20a延伸，經由通孔28將高速配線連接於第2配線層23。於高速配線焊盤20a、信號配線焊盤22a、電源用焊盤X及接地用焊盤Y，形成焊接凸塊等而與未圖示之外部設備連接。
圖6係第2配線層23中之配線圖案之平面模式圖。於第2配線層23，設置有第2層高速配線20c及第2層信號配線22。分別經由通孔自第1配線層21連接。另外，如觀察由單點鏈線III包圍之部位可知，存在高速配線焊盤20a與第2層信號配線22重疊之部位。
如圖2、3所示，於第3配線層24，設置有電源配線25及接地配線26。電源配線25位於第1配線層21側，於其上配置有接地配線26。經由電源用焊盤X與接地用焊盤Y對電源配線25與接地配線26供電。設置於第3配線層24之電源配線25與接地配線26中之至少一者用作屏蔽產生於高速配線 焊盤20a與第2層信號配線22之間之雜訊之雜訊屏蔽配線。再者，於第1配線層21、第2配線層23中，未設置配線或焊墊之部分配置有整面狀或網狀之電源配線或接地配線，但於圖5、6中省略了上述部件。於本實施方式中，對將接地配線26用作雜訊屏蔽配線之情況進行說明。
以下，對高速配線進行說明。
高速配線例如為PCIe(Peripheral Component Interconnect Express)等高速配線，係流通頻率例如為1GHz以上之信號之配線，且需要阻抗控制。於信號配線中流通頻率較高速配線慢之信號。高速配線焊盤20a具有較第1層高速配線20之線寬大之直徑，成為佔據較大面積之導體部。又，第1層高速配線20及第2層高速配線20c係以2根為一組之對配線，其配線圖案相互類似。高速配線較佳為成對使用。例如，高速配線20僅連接於必須以高速交換信號之第1半導體晶片3。例如，信號配線22存在自信號配線焊盤22a出來後連接於第1半導體晶片3之情況、自信號配線焊盤22a出來後連接於第3半導體晶片6之情況、及將第1半導體晶片3與第3半導體晶片6連接之情況。
如上所述，高速配線焊盤20a成為佔據較大面積之導體部。因此，若高速配線焊盤20a之部分與接地配線26重疊，則其等之間之電容耦合變大。因此，如圖2所示，於本實施方式中，於上層之第2配線層23之第2層信號配線22與高速配線焊盤20a不重疊之部分，不配置(去除)於其等之間用作雜訊屏蔽配線之接地配線26。
又，如圖3所示，於上層之第2配線層23之第2層信號配線22與高速配線焊盤20a重疊之部分，以與第2層信號配線22重疊之方式配置有於其等之間用作雜訊屏蔽配線之接地配線26。
圖4係將圖6之由單點鏈線III包圍之部分放大並透視地表示之模式圖。表示了設置有第2配線層23之第2層信號配線22與接地配線26之部分。高速配線焊盤20a之外形由虛線表示。如上所述，於第1配線層21之高速配線焊盤20a與第2配線層23之第2層信號配線22之間，將用作雜訊屏蔽配線之接地配線26以介置於第1配線層21之高速配線焊盤20a與第2配線層23之第2層信號配線22之間之方式配設。而且，如圖4所示，於與高速配線焊盤20a重疊之部分，對應於高速配線焊盤20a之形狀而形成有未設置接地配線26之區域。另一方面，以橫穿高速配線焊盤20a之上之方式，於形成有第2層信號配線22之部分，換句話說於高速配線焊盤20a與第2層信號配線22重疊之部分，與第2層信號配線22重疊地設置有接地配線26。
接地配線26以與通過高速配線焊盤20a之第2層信號配線22之配線圖案相同之配線圖案形成。為了容易理解，於圖4中，第2層信號配線22之線寬描繪得較接地配線26之線寬為細，但基本上，較佳為與第2層信號配線22之線寬大致相同。然而，接地配線26之線寬未必與第2層信號配線22之線寬大致相同，例如，於將第2層信號配線22之線寬設為10時，亦可將接地配線26之線寬設為增加5~15之線寬。即接地配線26之線寬可設為第2層信號配線22之1.5倍至2.5倍。再者，第2層信號配線22等之線寬例如為30μm至35μm左右。
藉由擴大接地配線26之線寬，高速配線焊盤20a與第2層信號配線22之間之雜訊降低效果變高，但高速配線焊盤20a與接地配線26之電容耦合變多。另一方面，藉由縮窄接地配線26之線寬，能夠降低高速配線焊盤20a與接地配線26之電容耦合，但高速配線焊盤20a與第2層信號配線22之間之雜訊降低效果變低。
因此，如上所述，當將第2層信號配線22之線寬設為10時，接地配線26之線寬設為5~15之間之線寬。即接地配線26之線寬可設為第2層信號配線22之0.5倍至1.5倍。藉此，能夠減輕高速配線焊盤20a與第2層信號配線22之間之雜訊影響，且抑制高速配線焊盤20a與接地配線26之電容耦合而抑制電氣特性之惡化。
配線基板2由絕緣層與形成於該絕緣層之導體層構成。絕緣層能夠由至少包含樹脂、陶瓷、玻璃、聚醯亞胺、矽之任一種之絕緣材料形成。又，導體層能夠由銅、鋁、鎢、金、銀之任一種或包含該等金屬之合金形成。
如上所述，於本實施方式之配線基板2及半導體封裝1中，能夠減輕配線層間之雜訊影響，且抑制電容耦合。
實際上，製成使用實施例之配線基板2之半導體封裝1，實施例之配線基板2係於與高速配線焊盤20a重疊之部分，對應於高速配線焊盤20a之形狀而形成未設置接地配線26之區域，於高速配線焊盤20a與第2層信號配線22重疊之部分，以與第2層信號配線22重疊之方式設置有與第2層信 號配線22相同線寬之接地配線26。另一方面，製成使用比較例之配線基板2之半導體封裝1，比較例之配線基板2係於與高速配線焊盤20a重疊之部分仍一樣地(立體地)設置有接地配線26。然後，對其等之電性能進行比較。
於上述電性能之比較中，關於回損(Return Loss)，關於差模(Differential mode)及共模(Common mode)之參考時脈(REFCLK)，於頻率50MHz-2.5GHz、2.5GHz-8GHz下進行測定並比較。
結果，於差模之參考時脈中，與比較例相比，實施例獲得良好之結果，例如，50MHz-2.5GHz下為-0.58dB，2.5GHz-8GHz下為-0.48dB。又，於共模之參考時脈中，與比較例相比，實施例獲得良好之結果，例如，50MHz-2.5GHz下為-0.39dB，2.5GHz-8GHz下為-0.28dB。
其他實施方式。
(a)於上述實施方式中，將接地配線26用作屏蔽，但亦可將電源配線25用作屏蔽。或者，亦可將電源配線25與接地配線26之兩者用於屏蔽。
(b)於上述實施方式中，接地配線26處於電源配線25之上，但亦可為電源配線25處於上側，接地配線26處於下側。
(c)於上述實施方式中，接地配線26或電源配線25屏蔽之係高速配線焊盤20a，但亦可屏蔽信號配線焊盤22a。
(d)於上述實施方式中，如圖2、圖3所示，接地配線26處於電源配線 25之上，疑似成為兩層，但亦可將電源配線25與接地配線26設置於同一層。
以上，已對本發明之幾個實施方式進行了說明，但該等實施方式係作為示例而提出者，並非意圖限定發明之範圍。該等新穎之實施方式能夠以其他各種方式實施，能於不脫離發明之主旨之範圍內進行各種省略、置換、變更。該等實施方式或其變化包含於發明之範圍或主旨中，並且包含於申請專利範圍中所記載之發明及其均等之範圍中。
相關申請案之引用
本申請案基於2020年03月17日提出申請之在先日本專利申請案第2020-046216號之優先權而主張優先權利益，藉由引用將其全部內容併入本文中。
20:第1層高速配線
20a:高速配線焊盤
21:第1配線層
22:第2層信號配線
23:第2配線層
24:第3配線層
25:電源配線
26:接地配線

Claims (9)

  1. 一種配線基板，其具有：第1配線層，其配置有第1信號配線與可傳送較上述第1信號配線高速之信號之第1高速配線；第2配線層，其配置有第2信號配線與可傳送較上述第2信號配線高速之信號之第2高速配線，且相對於上述第1配線層積層；及第3配線層，其包含配置於上述第1配線層與上述第2配線層之間之第3配線；且自積層方向觀察，於上述第1高速配線之焊盤與上述第2信號配線不重疊之部分不配置上述第3配線，自積層方向觀察，於上述第1高速配線之焊盤與上述第2信號配線重疊之部分設置有上述第3配線。
  2. 如請求項1之配線基板，其中上述第1高速配線及第2高速配線係可傳送頻率為1GHz以上之信號之配線。
  3. 如請求項1之配線基板，其中上述第1高速配線之焊盤與上述第2信號配線重疊之部分之上述第3配線之線寬為上述第2信號配線之線寬之0.5~1.5倍。
  4. 如請求項1之配線基板，其中配線層以包含上述第1配線層、上述第2配線層、上述第3配線層之導體層及上述導體層之間之絕緣層形成， 上述絕緣層由至少包含樹脂、陶瓷、玻璃、聚醯亞胺、矽氧化物、矽氮化物之任一種之絕緣材料形成，上述導體層由至少包含銅、鋁、鎢、金、銀之任一種之合金形成。
  5. 一種配線基板，其具有：第1配線層，其配置有第1信號配線與可傳送較上述第1信號配線高速之1GHz以上之頻率之信號之第1高速配線；第2配線層，其配置有第2信號配線與可傳送較上述第2信號配線高速之1GHz以上之頻率之信號之第2高速配線，且相對於上述第1配線層積層；及第3配線層，其包含配置於上述第1配線層與上述第2配線層之間之第3配線；且自積層方向觀察，於上述第1高速配線之焊盤與上述第2信號配線不重疊之部分不配置上述第3配線，自積層方向觀察，於上述第1高速配線之焊盤與上述第2信號配線重疊之部分設置上述第3配線，上述第1高速配線之焊盤與上述第2信號配線重疊之部分之上述第3配線線寬為上述第2信號配線之線寬之0.5~1.5倍。
  6. 如請求項1至5中任一項之配線基板，其中上述第3配線包含於上述第1配線層與上述第2配線層之間設置為整面狀或網狀之部分。
  7. 如請求項6之配線基板，其中上述第3配線為電源配線或/及接地配 線。
  8. 一種半導體裝置，其還具備：第1半導體晶片，其設置於如請求項1至5中任一項上述之上述配線基板之上述第2配線層上；第1樹脂層，其設置於上述第1半導體晶片之上；及第2半導體晶片，其設置於上述第1樹脂層之上；且上述第1高速配線及上述第2高速配線僅與上述第1半導體晶片電連接。
  9. 如請求項8之半導體裝置，其中上述第1半導體晶片為控制器晶片，上述第2半導體晶片為半導體記憶體晶片。
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