TWI738638B - Intermediate layer substrate laminate and manufacturing method thereof - Google Patents
Intermediate layer substrate laminate and manufacturing method thereof Download PDFInfo
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Abstract
提供在具備複數個貫通孔的中介層基板上隔著金屬層而具備其他基板的中介層基板積層體，亦即提供散熱性良好的中介層基板積層體及其製造方法。具體而言，為一種中介層基板積層體的製造方法，至少包含加壓程序，該加壓程序係將中介層基板的表面、其他基板的形成金屬層的表面予以對向，以5kgf/cm2以上作加壓從而接合，而該中介層基板係具備：複數個貫通孔或溝部；以及填充於貫通孔或溝部，從具有貫通孔或溝部的打算接合之側的面而超過0μm突出至10μm以下的高度的導電性材料，且導電性材料被以金屬材料及碳材料而構成。此外，為一種中介層基板積層體，具備：中介層基板；具備於中介層基板的打算接合之側的面上的金屬層；以及具備於金屬層上的其他基板。 Provided is an interposer substrate laminate having an interposer substrate having a plurality of through holes with other substrates interposed between a metal layer, that is, an interposer substrate laminate with good heat dissipation and a manufacturing method thereof. Specifically, it is a method for manufacturing an interposer substrate laminate, which includes at least a pressurizing process that opposes the surface of the interposer substrate and the surface of the other substrate where the metal layer is formed at a rate of 5kgf/cm 2 The above pressure is applied to join, and the interposer substrate is provided with: a plurality of through holes or grooves; and filled in the through holes or grooves, and protrudes from the surface with the through holes or grooves on the side to be joined from more than 0μm to 10μm or less The highly conductive material, and the conductive material is composed of metal materials and carbon materials. In addition, it is an interposer substrate laminate including: an interposer substrate; a metal layer provided on the surface of the interposer substrate to be bonded; and another substrate provided on the metal layer.
Description
本發明，係有關在第一基板上具備第二基板的基板積層體，有關在具備複數個貫通孔的中介層基板上隔著金屬層而具備其他基板的中介層基板積層體及其製造方法。 The present invention relates to a substrate laminate including a second substrate on a first substrate, and an interposer substrate laminate including a metal layer and another substrate on an interposer substrate provided with a plurality of through holes, and a method of manufacturing the same.
半導體裝置，係例如在如多層電路基板的配線基板(亦稱作安裝基板)上，搭載IC晶片、LSI晶片等的半導體晶片。在將配線基板與半導體晶片電氣連接的安裝手法方面，係舉例如焊線(WB)法及倒裝晶片(FC)法等。 The semiconductor device is, for example, a semiconductor chip in which an IC chip, an LSI chip, or the like is mounted on a wiring board (also referred to as a mounting board) such as a multilayer circuit board. As for the mounting method for electrically connecting the wiring board and the semiconductor chip, for example, the wire bonding (WB) method and the flip chip (FC) method are mentioned.
WB法，係將配線基板與半導體晶片上的電極，利用從直徑幾十微米至數百微米的接合線而電氣連接的手法。依WB法而接合的情況下，作為連接手段而使用的接合線的機械強度有時弱。此外，需要寬廣的配線空間，故有時無法充分應對高密度配線、裝置的小型化、薄型化等之要求。 The WB method is a method of electrically connecting a wiring board and electrodes on a semiconductor wafer using bonding wires with diameters ranging from tens of micrometers to hundreds of micrometers. In the case of bonding by the WB method, the mechanical strength of the bonding wire used as the connection means may be weak. In addition, a wide wiring space is required, so it may not be able to adequately meet the requirements of high-density wiring, downsizing and thinning of devices, etc.
另一方面，FC法，係如下手法：在配線基板 上，配置排列成陣列狀的稱作凸塊的突起狀的端子，經由此凸塊而搭載半導體晶片從而電氣連接的手法。於FC法，在將焊料的凸塊形成於半導體晶片的方法方面，係舉例如：在半導體晶片的電路形成面的鋁電極堆起焊料，進一步將該焊料加熱而半球狀地形成凸塊的方法；將金線接合於鋁電極而形成小球狀的凸塊的方法等。此外，為了提高電氣連接部分的機械強度，或者為了提高耐水性，於之後的程序，一般而言進行：在WB法方面係例如將半導體裝置整體或一部分，在FC法係例如將配線基板與半導體晶片之間，以如環氧樹脂的絕緣性的密封樹脂(於FC法係亦稱作底膠填充材)密封。依FC法而接合的情況下，僅配線基板與半導體晶片被藉凸塊而接合，故在半導體裝置從下方、側面等施加應力的情況下，即使已樹脂密封，有時半導體晶片仍從配線基板分離。此外，配線基板、半導體晶片、及底膠填充材，係分別線膨脹率不同，故因已接合的材料間的線膨脹率的差異使得有時在配線基板、半導體晶片等發生大的彎曲，發生晶片的破損、脫落等，並進一步發生異常動作。雖已思考以更硬質的材料構成配線基板從而防止彎曲的問題，惟近來的傾向方面，半導體晶片的基板係以薄且脆的材料而構成故依然容易破損，並非僅以配線基板的改善即可解決全部的問題者。 On the other hand, the FC method is the following method: Above, a method in which protruding terminals called bumps are arranged in an array, and a semiconductor chip is mounted via the bumps to be electrically connected. In the FC method, a method of forming solder bumps on a semiconductor wafer includes, for example, stacking solder on aluminum electrodes on the circuit forming surface of the semiconductor wafer, and further heating the solder to form bumps in a hemispherical shape. ; A method of bonding gold wires to aluminum electrodes to form small spherical bumps, etc. In addition, in order to improve the mechanical strength of the electrical connection part, or to improve the water resistance, the following procedures are generally carried out: in the WB method, for example, the whole or part of the semiconductor device, and in the FC method, for example, the wiring board and the semiconductor The wafers are sealed with an insulating sealing resin such as epoxy resin (also referred to as primer filler in the FC method). In the case of bonding by the FC method, only the wiring substrate and the semiconductor wafer are bonded by bumps. Therefore, even if stress is applied from the bottom or the side of the semiconductor device, the semiconductor wafer may still be bonded from the wiring substrate even if it is resin-sealed. Separate. In addition, the wiring substrates, semiconductor wafers, and primer fillers have different linear expansion coefficients. Therefore, the difference in linear expansion coefficients between the joined materials may cause large bending in the wiring substrates, semiconductor wafers, etc. The chip breaks, falls off, etc., and further abnormal operation occurs. Although it has been considered that the wiring board is made of a harder material to prevent the problem of bending, the recent trend is that the substrate of the semiconductor chip is made of thin and brittle materials, so it is still easy to be damaged. It is not only the improvement of the wiring board. Solve all the problems.
為了解決此等問題，已提出例如在配線基板與半導體晶片之間間插中介層基板而構成半導體基板的方法，其實用化正被檢討。 In order to solve these problems, for example, a method of forming a semiconductor substrate by interposing an interposer substrate between a wiring substrate and a semiconductor wafer has been proposed, and its practical application is under review.
中介層基板，係採以下構造：在矽、玻璃基板等週期性設置直徑數10μm~數100μm的貫通孔，以導電性高的材料而填充貫通孔。採用中介層基板的安裝形態，係記載於例如專利文獻1、專利文獻2等。再者，比起將半導體晶片在配線基板上利用WB法、FC法等而搭載，利用中介層基板而例如在形成半導體裝置的晶圓級，在晶圓整面作接合的情形從降低程序成本的觀點而言較受到期望。
The interposer substrate has a structure in which through holes with a diameter of several 10 μm to several 100 μm are periodically provided in a silicon, glass substrate, etc., and the through holes are filled with a highly conductive material. The mounting form using the interposer substrate is described in, for example,
近年來，半導體晶片的高密度化進展，除了電氣連接以外，漸要求從半導體裝置的散熱。在中介層基板的填充材方面，係一般而言，採用Cu(熱導率~400W/m‧K)，惟為了進一步提高散熱性，熱導率較高的填充材受到期望。在熱導率高的材料方面，係舉例奈米碳管(專利文獻3、非專利文獻1及2)。依Kim等，奈米碳管的熱導率為3000W/K‧m以上，從其導電性，進行將奈米碳管使用於填充材的檢討(非專利文獻1)。此外，專利文獻3，係記載：在基板上塗佈觸媒，以觸媒為起點而予以成長，使得可在基板上往垂直方向使奈米碳管成長。
In recent years, as the density of semiconductor wafers has advanced, in addition to electrical connections, heat dissipation from semiconductor devices has gradually been required. Regarding the filling material of the interposer substrate, generally speaking, Cu (thermal conductivity ~400W/m‧K) is used, but in order to further improve the heat dissipation, a filling material with a higher thermal conductivity is expected. Regarding materials with high thermal conductivity, carbon nanotubes are exemplified (Patent Document 3,
〔專利文獻1〕日本發明專利公開平成11-288978號 [Patent Document 1] Japanese Patent Publication No. 11-288978
〔專利文獻2〕日本發明專利公開2000-31345號 [Patent Document 2] Japanese Invention Patent Publication No. 2000-31345
〔專利文獻3〕日本發明專利公開2003-183012號 [Patent Document 3] Japanese Invention Patent Publication No. 2003-183012
〔非專利文獻1〕P.Kim et al., Physical Review Letters 87 (21)，215502-1~-4 (2001) [Non-Patent Document 1] P. Kim et al., Physical Review Letters 87 (21), 215502-1~-4 (2001)
〔非專利文獻2〕A.Kawabata et al., Japanese Journal of Applied Physics 52、110117-1~-4 (2013) [Non-Patent Document 2] A. Kawabata et al., Japanese Journal of Applied Physics 52, 110117-1~-4 (2013)
應用於在中介層基板的貫通孔使奈米碳管成長而填充從而提高電氣連接及散熱性的用途的情況下，存在以下的問題。 When applied to applications where carbon nanotubes are grown and filled in through holes of an interposer substrate to improve electrical connection and heat dissipation, there are the following problems.
首先，要取得電氣連接，係需要例如使奈米碳管成長成比與中介層基板的厚度相同的長度長。將使奈米碳管成長成從貫通孔突出之形的中介層基板，與形成半導體晶片、裝置構造等的基板在晶圓級作接合的情況下，作成藉例如電漿接合、直接接合而在基板的整面予以貼合而接合時，在接合的表面存在奈米碳管所致的凹凸，故無法順利接合。另一方面，使奈米碳管成長成比中介層基板的厚度短時，亦即成長成比貫通孔周邊的基板表面的高度淺時，雖無接合時的平坦性的問題，惟無法獲得電氣連接。為了獲得電氣連接性及適於接合的平滑性，而對使奈米碳管成長成從貫通孔突出之形的中介層基板實施洗淨及研磨時，有奈米碳管從貫通孔脫落如此之問題。為此，雖亦正檢討在使奈米碳管成長成從貫通孔突出之形的中介層基板的表 面形成SOG(Silicon on Glass)膜，實施化學機械研磨(Chemical Mechanical Polishing、CMP)，惟SOG膜係絕緣體，且熱導率係SiO2程度(約1.5W/m‧K)，故存在散熱性變差的問題。 First, to obtain electrical connection, it is necessary, for example, to grow carbon nanotubes to be longer than the thickness of the interposer substrate. When the carbon nanotubes are grown to protrude from the through-holes, the interposer substrates are bonded to the substrates forming semiconductor wafers, device structures, etc. at the wafer level. For example, plasma bonding or direct bonding is used. When the entire surfaces of the substrates are bonded and bonded, there are unevennesses due to carbon nanotubes on the bonded surfaces, so smooth bonding cannot be achieved. On the other hand, when the carbon nanotubes are grown to be shorter than the thickness of the interposer substrate, that is, to be grown to be shallower than the height of the substrate surface around the through hole, there is no problem of flatness during bonding, but electrical connect. In order to obtain electrical connectivity and smoothness suitable for joining, when cleaning and polishing the interposer substrate that has grown carbon nanotubes to protrude from the through holes, the carbon nanotubes may fall off from the through holes. problem. To this end, although it is also reviewing the formation of SOG (Silicon on Glass) film on the surface of the interposer substrate that has grown carbon nanotubes to protrude from the through holes, and chemical mechanical polishing (CMP) is performed, SOG The film is an insulator, and the thermal conductivity is about SiO 2 (approximately 1.5W/m‧K), so there is a problem of poor heat dissipation.
接著，關於散熱性，係如上述，雖已有報告奈米碳管單體的高熱導率，惟在基板上予以成長的奈米碳管的每單位面積的密度低，例如使此等奈米碳管成長於貫通孔的情況下，貫通孔內的空隙率變高故有時無法獲得充分的散熱性。非專利文獻2，係進行將奈米碳管的每單位面積的密度提高的檢討，已有報告提高面積密度使得散熱性提升。然而，此報告中的奈米碳管的散熱性，係未達到以是既存的填充材的Cu作了填充的情況下的散熱性，進一步的密度的提升受到期望。 Next, regarding heat dissipation, as mentioned above, although the high thermal conductivity of carbon nanotubes alone has been reported, the density per unit area of carbon nanotubes grown on a substrate is low. When the carbon tube grows in the through-hole, the porosity in the through-hole becomes high, so that it may not be possible to obtain sufficient heat dissipation. Non-Patent Document 2 reviews the improvement of the density per unit area of carbon nanotubes, and it has been reported that increasing the area density leads to improved heat dissipation. However, the heat dissipation performance of carbon nanotubes in this report does not reach the heat dissipation performance when Cu, which is an existing filler, is filled, and further improvements in density are expected.
本發明人，係除了將貫通孔僅以奈米碳管作填充的檢討以外，亦檢討：使奈米碳管與Cu複合化而填充，藉Cu將貫通孔與奈米碳管之間的空隙填埋，從而比僅以Cu填充更加提高散熱性。然而，為了獲得貫通孔的電氣連接而以使奈米碳管從貫通孔突出之形予以填充時，在與半導體晶片接合前，需要將該表面藉CMP而平滑化。此外，在成膜有Cu之面進行CMP的情況下，因侵蝕、凹陷等而產生凹部，使該狀態下的表面與其他基板接合時，有時使接合面產生空洞。 In addition to the review of filling the through holes with only carbon nanotubes, the inventors also reviewed: the carbon nanotubes are compounded with Cu to fill the gaps between the through holes and the carbon nanotubes. Filling, thereby improving heat dissipation more than just filling with Cu. However, when filling the carbon nanotubes in a shape that protrudes from the through hole in order to obtain the electrical connection of the through hole, the surface needs to be smoothed by CMP before bonding to the semiconductor wafer. In addition, when CMP is performed on the Cu-formed surface, recesses are generated due to erosion, dents, etc., and when the surface in this state is bonded to another substrate, a cavity may be generated on the bonding surface.
如以上，使用奈米碳管作為中介層基板的貫通孔的填充材的情況下，在貫通孔以導電性材料突出之形 而填充的表面，亦即在與半導體晶片等的其他基板作接合之面產生階差，故有與其他基板的接合無法順利進行如此之問題。此外，應用據說理論上熱導率比奈米碳管高的石墨烯的情況下，亦以從貫通孔突出之形而填充，故產生如上述的問題，需要找出適合的接合方法。 As above, in the case of using carbon nanotubes as the filler for the through-holes of the interposer substrate, the through-holes are made of conductive material protruding The filled surface, that is, the surface for bonding with other substrates such as semiconductor wafers, has a step difference, so there is a problem that the bonding with other substrates cannot be performed smoothly. In addition, in the case of applying graphene, which is said to have a theoretically higher thermal conductivity than carbon nanotubes, it is also filled in a shape protruding from the through hole. Therefore, the above-mentioned problems arise, and it is necessary to find a suitable joining method.
鑑於上述的課題，本發明之目的，係在於提供一種基板積層體及其製造方法，可將具有例如貫通孔、配線用的溝部(溝渠)等並使有益於半導體基板的高散熱化的熱導率高的奈米碳管或石墨烯與金屬材料以從該貫通孔、溝部等突出之形而填充的中介層等之基板，與半導體晶片等之別種基板在晶圓級，亦即在晶圓整面強固地接合。 In view of the above-mentioned problems, the object of the present invention is to provide a substrate laminate and a method of manufacturing the same, which can provide heat conduction that has, for example, through-holes, wiring grooves (trenches), etc., which is beneficial to high heat dissipation of semiconductor substrates. High-rate carbon nanotubes or graphene and metal materials protruding from the through-holes, grooves, etc. are filled with substrates such as interposers, and other types of substrates such as semiconductor wafers are at the wafer level, that is, at the wafer level. The entire surface is firmly joined.
本發明，係依一態樣時，可提供一種中介層基板積層體的製造方法，至少包含加壓程序，該加壓程序係將中介層基板的表面、其他基板的形成金屬層的表面予以對向，以5kgf/cm2以上作加壓從而接合，而該中介層基板係具備：複數個貫通孔或溝部；以及填充於前述貫通孔或溝部，從具有前述貫通孔或溝部的打算接合之側的面而超過0μm突出至10μm以下的高度的導電性材料；另外加壓程序中係前述導電性材料被以金屬材料及碳材料而構成。 According to one aspect of the present invention, a method for manufacturing an interposer substrate laminate can be provided, which includes at least a pressurizing process that aligns the surface of the interposer substrate and the surfaces of other substrates where the metal layer is formed. to to 5kgf / cm 2 or more for pressurized to engage, and the interposer substrate system comprising: a plurality of through holes or a groove; and filled in the through hole or groove, engaging from intended to have the through hole or groove portions of the side It is a conductive material with a height exceeding 0 μm and protruding below 10 μm. In addition, the aforementioned conductive material is composed of a metal material and a carbon material during the pressurization process.
此外，本發明，係依別的一態樣時，可提供一種中介 層基板積層體，至少具備中介層基板、金屬層及其他基板，該中介層基板係具備：複數個貫通孔或溝部；以及填充於前述貫通孔或溝部，從具有前述貫通孔或溝部的打算接合之側的面而超過0μm突出至10μm以下的高度的導電性材料；該金屬層係具備於前述中介層基板的具有前述貫通孔或溝部的打算接合之側的面上；該其他基板係具備於前述金屬層上。 In addition, the present invention can provide an intermediary when it is in another aspect. The multilayer substrate laminate includes at least an interposer substrate, a metal layer, and other substrates. The interposer substrate includes: a plurality of through holes or grooves; The metal layer is provided on the surface of the interposer substrate on the side where the through holes or grooves are intended to be joined; the other substrate is provided on On the aforementioned metal layer.
依本發明時，例如即使利用使熱導率高的奈米碳管或石墨烯等之碳材料與Cu等之金屬材料以從該貫通孔或溝部突出之形而填充至比基板的表面高既定的範圍的位置的中介層等之基板而與半導體晶片等之其他基板在基板整面作接合的情況下，仍獲得空隙遍及接合界面整體為少的基板積層體。所得的中介層基板積層體，係在中介層基板與其他基板的接合界面的接合性良好，可獲得優異之散熱性。 According to the present invention, for example, even carbon materials such as carbon nanotubes or graphene with high thermal conductivity and metal materials such as Cu are used to protrude from the through holes or grooves and fill them higher than the surface of the substrate. In the case where a substrate such as an interposer is bonded to another substrate such as a semiconductor wafer in the entire surface of the substrate, a substrate laminate with fewer voids throughout the bonding interface is obtained. The obtained interposer substrate laminate has good bonding properties at the bonding interface between the interposer substrate and other substrates, and excellent heat dissipation properties can be obtained.
10、20‧‧‧中介層基板 10, 20‧‧‧Interposer substrate
11、21‧‧‧中介層基板的貫通孔 11.21‧‧‧Through hole of interposer substrate
21a‧‧‧中介層基板的溝部 21a‧‧‧The groove of the interposer substrate
12、22‧‧‧導電性材料 12, 22‧‧‧Conductive material
13、23‧‧‧其他基板 13, 23‧‧‧Other substrates
14、14a、14b、24、24a、24b‧‧‧金屬層 14, 14a, 14b, 24, 24a, 24b‧‧‧Metal layer
25‧‧‧接合體 25‧‧‧Joint body
16、26‧‧‧中介層基板積層體 16, 26‧‧‧Interposer substrate laminate
〔圖1〕本發明的一實施形態的中介層基板積層體的製造方法的示意圖。 [Fig. 1] A schematic diagram of a method of manufacturing an interposer substrate laminate according to an embodiment of the present invention.
〔圖2〕本發明的別的一實施形態的中介層基板積層體的製造方法的示意圖。 [FIG. 2] A schematic diagram of a method of manufacturing an interposer substrate laminate according to another embodiment of the present invention.
以下，詳細說明供於實施本發明用的一形態，惟本發明的範圍係非限定於此形態者。 Hereinafter, a form for implementing the present invention will be described in detail, but the scope of the present invention is not limited to this form.
本發明，係依一實施形態時，可提供在中介層基板上隔著金屬層而具備其他基板的中介層基板積層體的製造方法。 According to one embodiment of the present invention, it is possible to provide a method for manufacturing an interposer substrate laminate having an interposer substrate with a metal layer interposed therebetween.
在中介層基板的材料方面，係舉例由矽、玻璃、及聚醯亞胺等之有機材料所成之基板。尤其，矽，係於貫通孔或溝部的形成等方面加工容易，故優選。中介層基板的厚度，係非特別限定者，可為30~500μm。 In terms of materials for the interposer substrate, examples include substrates made of organic materials such as silicon, glass, and polyimide. In particular, silicon is preferable because it is easy to process in the formation of through-holes and grooves. The thickness of the interposer substrate is not particularly limited, and can be 30 to 500 μm.
中介層基板，係具備複數個貫通孔。貫通孔，係貫通於中介層基板的厚度方向。貫通孔的形狀，係非特別限定者，可為圓形、橢圓形、正方形、長方形等。貫通孔的形狀為圓形的情況下，直徑，係非特別限定者，可為10~500μm。關於其他形狀，係非特別限定者，可為截面積78.5~196250μm2。中介層基板，係具備複數個貫通孔，具備可形成間距寬的至少2以上的貫通孔。中介層基板，係例如可每1cm2具有2500個的貫通孔。複數個貫通孔，係可分別為同形狀或不同形狀，可為相同截面積或不同截面積。貫通孔，係可依用途而具備週期性，或者可隨機地具備。週期性地具備貫通孔，係如下狀態：例如具備同直徑的圓形的貫通孔的情況下，將各貫通孔的中心，亦即將圓形的中心部配置成棋盤的目狀般隔著一定之間隔 而具備貫通孔。例如，在中介層基板具備3個同直徑的圓形的貫通孔的情況下，能以等間隔配置成一列，亦能以3個貫通孔的各中心間的距離成為相同的方式配置。貫通孔間之間距寬，係非特別限定者，可為等間隔或不同間隔，可為10~500μm。 The interposer substrate is provided with a plurality of through holes. The through hole penetrates through the thickness direction of the interposer substrate. The shape of the through hole is not particularly limited, and may be a circle, an ellipse, a square, a rectangle, or the like. When the shape of the through hole is circular, the diameter is not particularly limited, and may be 10 to 500 μm. Regarding other shapes, it is not particularly limited, and the cross-sectional area can be 78.5 to 19,250 μm 2 . The interposer substrate is provided with a plurality of through holes, and is provided with at least 2 through holes with a wide pitch. The interposer substrate may have 2500 through holes per 1 cm 2, for example. The plurality of through holes may have the same shape or different shapes, and may have the same cross-sectional area or different cross-sectional areas. The through holes may be provided with periodicity depending on the application, or may be provided at random. Periodic through holes are provided in the following state: For example, in the case of circular through holes with the same diameter, the center of each through hole, that is, the center of the circular shape, is arranged in a checkerboard pattern. Through holes are provided at intervals. For example, when the interposer substrate has three circular through holes with the same diameter, they can be arranged in a row at equal intervals, or the distance between the centers of the three through holes may be the same. The distance between the through holes is wide, which is not particularly limited, and can be equal or different intervals, and can be 10 to 500 μm.
中介層基板，係可進一步具備溝部(溝渠)。此外，依情況，中介層基板，係亦可代替貫通孔而具備複數個溝部。溝部，係不同於貫通孔，並未貫通基板，係從中介層基板的表面相對於基板的厚度方向具有深度的溝。溝部的最深部，係非特別限定者，可相對於中介層基板的厚度為10~50%的深度。從中介層基板的剖面所見的情況下的溝部的剖面形狀，係非特別限定者，可為半圓形及半橢圓形的圓弧的部分向下的形狀，或者長方形、正方形。形成於中介層基板的表面的溝部的寬度，係非特別限定者，可為10~500μm。形成於中介層基板的表面的溝部的開口的形狀，係例如，如同上述之貫通孔，可為圓形、橢圓形、正方形、長方形等。可依中介層的用途，而設定溝部的長度、個數等，例如可具備複數個溝部，例如2個以上，可分別為同形狀或不同形狀，此外可週期性地具備，亦可隨機地具備。中介層基板不具有貫通孔，而在其一面具備溝部的情況下，可在溝部具備導電性材料前或後，從與具備溝部的面係相反側的面，直到溝部成為貫通孔的厚度為止，進行研削、研磨、氣相或液相蝕刻、或將其等組合下的蝕刻處理，作成具備貫通孔的基 板。或者，亦可在加壓程序後，從中介層基板積層體的未與其他基板作接合的中介層基板的面，進行蝕刻處理直到溝部成為貫通孔的厚度為止。 The interposer substrate may be further provided with a trench (trench). In addition, depending on the situation, the interposer substrate may be provided with a plurality of grooves instead of the through holes. The groove is different from the through hole and does not penetrate the substrate, but is a groove having a depth from the surface of the interposer substrate with respect to the thickness direction of the substrate. The deepest part of the groove is not particularly limited, and may be 10-50% of the thickness of the interposer substrate. The cross-sectional shape of the groove when seen from the cross-section of the interposer substrate is not particularly limited, and it may be a shape in which the arc of a semicircle or a semi-ellipse is downward, or a rectangle or a square. The width of the groove formed on the surface of the interposer substrate is not particularly limited, and may be 10 to 500 μm. The shape of the opening of the groove formed on the surface of the interposer substrate is, for example, a circle, an ellipse, a square, a rectangle, etc., like the through hole described above. The length and number of the grooves can be set according to the purpose of the interposer. For example, there can be a plurality of grooves, such as two or more, which can be of the same shape or different shapes, and can be provided periodically or randomly. . The interposer substrate does not have a through hole, and when a groove is provided on one side of the interposer, before or after the groove is provided with a conductive material, it can be from the surface opposite to the surface with the groove until the groove becomes the thickness of the through hole. Carry out grinding, polishing, vapor or liquid phase etching, or a combination of etching treatments, etc., to make a base with through holes plate. Alternatively, after the pressurization process, the surface of the interposer substrate that is not bonded to other substrates of the interposer substrate laminate may be etched until the groove becomes the thickness of the through hole.
中介層基板，係具備：複數個貫通孔或溝部；以及填充於貫通孔或溝部，從具有貫通孔或溝部的打算接合之側的面而超過0μm突出至10μm以下的高度的導電性材料。 The interposer substrate is provided with a plurality of through holes or grooves, and a conductive material filled in the through holes or grooves and protruding from a surface having the through holes or grooves to a height of 10 μm or less from the side where the through holes or grooves are to be joined.
使用於貫通孔或溝部的填充的導電性材料，係由金屬材料與碳材料而構成，至少各個材料使用1種為優選。在金屬材料方面，係例舉Cu、Ta、W、Al、Au、Ag、Pt、Ti等，使用至少1種材料。尤其，從電導率高、在配線材料方面已實用化之點而言，Cu為優選。在碳材料方面，係非特別限定者，舉例石墨烯、奈米碳管等的sp2結合的奈米尺寸的碳物質，使用至少1種材料。石墨烯，係基本上，由1原子的厚度的sp2結合的碳所成之薄片狀的物質。在本發明的石墨烯的薄片形狀，係例如可為如1個的擴展的手帕的二維，例如亦可為如將1個的手帕隨意圓化的三維，可為全部相同的形狀或包含不同形狀。此外，石墨烯的薄片，係可在離析的狀態下使用，亦可在重疊複數個的狀態下使用。奈米碳管，係基本上，呈將石墨烯的薄片圓化成圓筒狀的構造，可為具有1個此圓筒狀構造的單層者，亦可為將圓筒狀構造的直徑不同的2者以同軸作重疊的2層者，亦可為將圓筒狀構造的直徑不同的複數個奈米碳管以同軸重疊的多層者。奈米碳管的最外層的直徑， 係可為0.4~100nm。奈米碳管的長度，係非特別限定者，可為依存於中介層基板的厚度的長度，亦可為從中介層基板的表面超過0μm而突出至10μm以下的高度的程度的長度。尤其，從熱導率高、具有可撓性之點而言，使用奈米碳管為優選。 The conductive material used for the filling of the through hole or the groove is composed of a metal material and a carbon material, and it is preferable to use at least one of each material. In terms of metal materials, Cu, Ta, W, Al, Au, Ag, Pt, Ti, etc. are exemplified, and at least one material is used. In particular, Cu is preferable in terms of high electrical conductivity and practical use as a wiring material. Regarding the carbon material, it is not particularly limited. For example, sp 2 bonded nano-sized carbon materials such as graphene and carbon nanotubes, and at least one material is used. Graphene is basically a sheet-like substance made of sp 2 bonded carbon with a thickness of 1 atom. The shape of the graphene sheet of the present invention may be, for example, a two-dimensional, expanded handkerchief, or, for example, a three-dimensional, such as a handkerchief rounded at will, and may be all the same shape or include different shapes. shape. In addition, graphene flakes can be used in an isolated state or in a state where a plurality of sheets are stacked. Carbon nanotubes basically have a structure in which graphene sheets are rounded into a cylindrical shape. They can have a single layer of this cylindrical structure, or they can have different diameters of the cylindrical structure. The two layers are coaxially overlapped with two layers, or a plurality of carbon nanotubes with different diameters in a cylindrical structure are overlapped coaxially. The diameter of the outermost layer of carbon nanotubes can be 0.4~100nm. The length of the carbon nanotube is not particularly limited, and may be a length dependent on the thickness of the interposer substrate, or may be a length that protrudes from the surface of the interposer substrate to a height of 10 μm or less over 0 μm. In particular, in terms of high thermal conductivity and flexibility, it is preferable to use carbon nanotubes.
使至少2種類的導電性材料填充於中介層基板的貫通孔或溝部時，可將例如金屬材料與碳材料同時或交替予以填充，亦可先予以填充任一方的材料後，予以填充另一方的材料。例如，使金屬材料為Cu，使碳材料為奈米碳管的情況下，亦可先使奈米碳管填充於貫通孔或溝部，之後予以填充Cu，而填埋貫通孔或溝部的內壁與奈米碳管之間的空隙。 When filling at least two kinds of conductive materials in the through holes or grooves of the interposer substrate, for example, a metal material and a carbon material may be filled simultaneously or alternately, or one may be filled first, and then the other may be filled. Material. For example, when the metal material is Cu and the carbon material is carbon nanotubes, the carbon nanotubes may be filled in the through holes or trenches first, and then filled with Cu to fill the inner walls of the through holes or trenches. And the gap between carbon nanotubes.
在金屬材料的填充方法方面，係舉例鍍層法、化學蒸鍍(CVD：Chemical Vapor Deposition)法、物理蒸鍍(PVD：Physical Vapor Deposition)法等，可使用此等之中1種的方法，亦可使用2種方法。碳材料，係可使用在填充於貫通孔或溝部前成為上述之碳物質的形狀者，亦可在填充於貫通孔或溝部時構成上述之碳物質的形狀。例如，可在填充於貫通孔或溝部前，預先製作奈米碳管，將膏狀或溶液狀的金屬材料予以混合，利用鍍層法等而與金屬材料同時使碳材料填充於貫通孔或溝部。在填充於貫通孔或溝部時形成奈米碳管的情況下，可利用一般的奈米碳管的製造方法，例如可利用電弧法、雷射剝蝕法、CVD法等而予以成長於貫通孔內或溝部內。使用任一填 充方法的情況下，皆可為了在中介層基板的貫通孔或溝部以外的表面不會堆積此等導電性材料，而使用例如遮蔽(遮蔽)帶等。此外，可利用例如鹽酸、硫酸等之酸性水溶液，而將例如基板予以浸漬，或塗佈於基板表面上，或旋轉式蝕刻，從而除去附著於貫通孔或溝部以外的中介層基板的表面部分的填充物。 In terms of the filling method of metal materials, for example, plating method, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, physical vapor deposition (PVD: Physical Vapor Deposition) method, etc. can be used. One of these methods can also be used. Two methods can be used. The carbon material may be a shape that becomes the above-mentioned carbon material before being filled in a through hole or a groove, or it may form the above-mentioned carbon material when it is filled in a through hole or a groove. For example, carbon nanotubes can be prepared in advance before filling the through holes or grooves, and a paste or solution metal material can be mixed, and the carbon material can be filled in the through holes or grooves at the same time as the metal material by a plating method or the like. In the case of forming carbon nanotubes when filling through holes or grooves, general carbon nanotube manufacturing methods can be used, for example, arc method, laser ablation, CVD method, etc. can be used to grow in through holes Or in the ditch. Use any fill In the case of the charging method, in order to prevent these conductive materials from accumulating on the surface other than the through holes or grooves of the interposer substrate, for example, a masking tape or the like can be used. In addition, an acidic aqueous solution such as hydrochloric acid, sulfuric acid, etc. can be used to immerse, or coat, or spin-etch the substrate on the surface of the substrate to remove the surface parts of the interposer substrate other than the through holes or grooves. Stuffing.
中介層基板的貫通孔或溝部，係可利用例如上述之填充方法，而將至少2種類的導電性材料以從中介層基板的表面，亦即以從在之後的程序打算與其他基板作接合之側的面突出至超過0μm且優選上10μm以下、較優選上5μm以下、更優選上1μm以下的高度之形而填充。導電性材料以從中介層基板的表面突出至超過0μm且10μm以下的高度之形而填充的情況下，在將其他基板作接合時，存在於中介層基板與其他基板之間的導電性材料係容易彎曲變形。導電性材料以從中介層基板的表面突出至超過10μm的高度之形而填充的情況下，在將其他基板作接合時，存在於中介層基板與其他基板之間的導電性材料，例如奈米碳管的彎曲變形變不充分，在面整體的接合強度弱，在接合面容易剝離。導電性材料以未從中介層基板的表面突出的比0μm低的高度而填充的情況下，將此表面與其他基板作接合時，難以獲得電氣連接。中介層基板具備貫通孔的情況下，亦可依用途而以從中介層基板的貫通孔的一端或兩端的開口部的表面超過0μm而突出至10μm以下的高度之形而填充導電性材料。中介層基板具 備溝部的情況下，可例如在中介層基板的溝部，予以載置例如Al、Fe、或將此等組合的金屬複合體等的觸媒，1.0~1.0×104Pa的減壓環境中，200~800℃下藉採用乙炔氣體等的CVD法，而使奈米碳管從打算與其他基板作接合之側的面超過0μm而成長至例如1μm後，藉鍍層法填充Cu，從而作成既定的突出之形的填充。此外，亦可包含如下程序：在溝部填充導電性材料後，在與其他基板作接合的加壓程序的前或後，從與具備溝部的面係相反側的面，進行研削、研磨、氣相或液相蝕刻、或將其等組合下的蝕刻處理直到溝部成為貫通孔的厚度為止，使溝部貫通。作成如此在填充導電性材料後使溝部貫通的情況下，貫通孔內的導電性材料，係亦具有與上述的從當初具備貫通孔的中介層基板同樣的填充狀態。 The through-holes or grooves of the interposer substrate can be filled with at least two types of conductive materials from the surface of the interposer substrate by using the above-mentioned filling method. The surface on the side protrudes to a height exceeding 0 μm and preferably 10 μm or less, more preferably 5 μm or less, and more preferably 1 μm or less in height, and is filled. When the conductive material is filled in a form protruding from the surface of the interposer substrate to a height exceeding 0 μm and less than 10 μm, when other substrates are bonded, the conductive material system that exists between the interposer substrate and the other substrate Easy to bend and deform. When the conductive material is filled in a form protruding from the surface of the interposer substrate to a height exceeding 10 μm, when other substrates are bonded, the conductive material that exists between the interposer substrate and the other substrate, such as nano The bending deformation of the carbon tube becomes insufficient, the joint strength on the entire surface is weak, and it is easy to peel off on the joint surface. When the conductive material is filled with a height lower than 0 μm that does not protrude from the surface of the interposer substrate, it is difficult to obtain electrical connection when the surface is bonded to another substrate. When the interposer substrate has a through hole, the conductive material may be filled with the conductive material in a form that exceeds 0 μm from the surface of the opening at one or both ends of the through hole of the interposer substrate to a height of 10 μm or less. When the interposer substrate has a groove, for example, a catalyst such as Al, Fe, or a combination of metal composites, etc. can be placed in the groove of the interposer substrate, and the pressure is reduced to 1.0 to 1.0×10 4 Pa In the environment, the CVD method using acetylene gas is used at 200~800°C to grow the carbon nanotube from the side where it is intended to be bonded to other substrates to exceed 0μm to, for example, 1μm, and then fill it with Cu by the plating method. Fill in the shape of a predetermined protrusion. In addition, it may also include the following procedure: after filling the groove with a conductive material, before or after the pressurization procedure for bonding with other substrates, grinding, polishing, and vapor phase are performed from the surface opposite to the surface with the groove. Either liquid phase etching, or a combination of these etching treatments, until the groove portion becomes the thickness of the through hole, so that the groove portion is penetrated. When the groove portion is penetrated after filling the conductive material in this way, the conductive material in the through hole also has the same filling state as the interposer substrate having the through hole from the beginning.
在其他基板方面，係矽基板、玻璃基板等以外，舉例SOI(Silicon On Insulator)基板等。此外，其他基板，係可為中介層基板，亦可為既存的半導體晶片。SOI基板，係在絕緣體基板上，具備可形成裝置層的矽薄膜層的基板，在絕緣體基板方面舉例具有藍寶石、石英、玻璃基板等的SOS(Silicon on Sapphire)基板、SOQ(Silicon on Quartz)基板、SOG基板等，取決於用途，亦可為代替絕緣體基板使用半導體基板而與矽基板貼合的貼合基板。 In terms of other substrates, in addition to silicon substrates, glass substrates, etc., SOI (Silicon On Insulator) substrates are examples. In addition, the other substrate may be an interposer substrate or an existing semiconductor wafer. The SOI substrate is a substrate with a silicon thin film layer that can form a device layer on an insulator substrate. Examples of insulator substrates include SOS (Silicon on Sapphire) substrates such as sapphire, quartz, and glass substrates, and SOQ (Silicon on Quartz) substrates. , SOG substrate, etc., depending on the application, it can also be a bonded substrate that is bonded to a silicon substrate by using a semiconductor substrate instead of an insulator substrate.
SOI基板，係可使用市售者，亦可製作。在製作方法方面，係舉例如SmartCut法及SiGen法等，惟非特別限 定於此等者，亦可將此等各程序作組合，而該SmartCut法係在貼合面側將注入氫離子的矽基板與絕緣體基板予以貼合後，實施大概500℃以上的熱處理使離子注入層熱剝離，而在絕緣體基板上轉印矽薄膜而獲得，該SiGen法係在貼合面側將注入氫離子的矽基板與絕緣體基板予以貼合，常溫下以機械方式使離子注入層剝離，而在絕緣體基板上轉印矽薄膜而獲得。例如，可將矽基板與絕緣體基板以黏合劑等予以貼合，而將矽基板的與接合面相反側的面以研磨等薄化。於SOI基板，絕緣體基板與矽基板的貼合，係從作為中介層基板積層體時獲得良好的散熱性能之點而言，在與中介層基板作接合的加壓程序後，以可卸除絕緣體基板部分的程度而貼合為理想。此外，可在矽基板與絕緣體基板中的至少一方的貼合面具備氧化膜的狀態下予以貼合，而作成具有埋入的氧化膜的SOI基板。矽薄膜的厚度，係雖可依用途而選擇，惟作成例如5~500nm為優選，可藉研磨、蝕刻等而調整。 SOI substrates are commercially available or can be manufactured. In terms of production methods, such as SmartCut method and SiGen method, etc., but not particularly limited If these are scheduled, these procedures can also be combined. The SmartCut method is to bond a silicon substrate implanted with hydrogen ions and an insulator substrate on the bonding surface side, and then perform a heat treatment at about 500°C or higher to make the ions The implanted layer is thermally peeled, and the silicon film is transferred to the insulator substrate. The SiGen method is to bond the hydrogen ion implanted silicon substrate and the insulator substrate on the bonding surface side, and mechanically peel off the ion implanted layer at room temperature. , And obtained by transferring a silicon film on an insulator substrate. For example, the silicon substrate and the insulator substrate may be bonded with an adhesive or the like, and the surface of the silicon substrate on the opposite side of the bonding surface may be thinned by polishing or the like. The bonding of the SOI substrate, the insulator substrate and the silicon substrate is based on the point of obtaining good heat dissipation performance when used as an interposer substrate laminate. After the pressure process of bonding with the interposer substrate, the insulator can be removed It is ideal to adhere to the degree of the substrate part. In addition, it is possible to bond the silicon substrate and the insulator substrate in a state where the bonding surface of at least one of the silicon substrate and the insulator substrate is provided with an oxide film to form an SOI substrate with an embedded oxide film. Although the thickness of the silicon film can be selected according to the application, it is preferably made, for example, from 5 to 500 nm, and it can be adjusted by polishing, etching, etc.
其他基板，係依情況，亦可使用如下SOI基板：與中介層基板作接合後，為了在中介層基板上僅具備例如矽薄膜層，預先將矽基板與絕緣體基板藉接著強度低的黏合劑等予以接合，而使成為矽基板的接合面的相反側的面藉研削、研磨、氣相或液相蝕刻該等的組合而予以薄化。此情況下，將此SOI基板的矽薄膜層的表面與中介層基板隔著金屬層作接合而作成基板積層體後，亦即在加壓程序後，以機械或化學方式除去矽薄膜層與絕緣體基板之 間的接著層，使得可製作僅具備矽薄膜層的中介層基板。在從中介層基板積層體卸除絕緣體基板的方法方面，利用例如楔等之銳角的剝離器具，而對矽層與絕緣體基板之間的接著層或接合面給予機械衝撃，使得可將絕緣體基板以機械方式分離。此外，使從例如中介層基板積層體的絕緣體基板側的端面至與矽層的接著層或接合面的部分浸於例如鹼性、酸等，而使例如接著層溶解，使得可將絕緣體基板以化學方式分離。 For other substrates, depending on the situation, the following SOI substrates can also be used: After bonding with the interposer substrate, in order to have only a silicon thin film layer on the interposer substrate, the silicon substrate and the insulator substrate are bonded in advance with a low-strength adhesive, etc. Bonding is performed so that the surface opposite to the bonding surface of the silicon substrate is thinned by a combination of grinding, polishing, and vapor-phase or liquid-phase etching. In this case, the surface of the silicon thin film layer of the SOI substrate is bonded to the interposer substrate via the metal layer to form a substrate laminate, that is, after the pressure process, the silicon thin film layer and the insulator are removed mechanically or chemically Of the substrate The intermediate bonding layer makes it possible to fabricate an interposer substrate with only a silicon thin film layer. In the method of removing the insulator substrate from the interposer substrate laminate, a sharp-angled peeling tool such as a wedge is used to mechanically impact the adhesive layer or bonding surface between the silicon layer and the insulator substrate, so that the insulator substrate can be Separated mechanically. In addition, for example, the part from the end surface on the insulator substrate side of the interposer substrate laminate to the adhesive layer or the bonding surface with the silicon layer is immersed in, for example, alkali, acid, etc., to dissolve, for example, the adhesive layer, so that the insulator substrate can be Chemical separation.
其他基板，係與中介層基板作接合前，亦即在加壓程序前，在其他基板的表面優選上藉氣相沉積法形成金屬層。 For other substrates, before bonding with the interposer substrate, that is, before the pressurization process, a metal layer is preferably formed on the surface of the other substrate by vapor deposition.
形成金屬層的金屬材料，係從由Au、Cu、Hf、Ta及W所成之群組所選出的至少一者為優選。金屬層，係形成於予以與中介層基板對向的其他基板的面。與中介層基板的接合時，從期望金屬層因其金屬材料的展性而容易變形而言，Au或Cu較優選。依情況，在作成基板積層體後，金屬層的金屬成分擴散於裝置等而造成影響的情況下，係使用不易擴散於裝置的Hf、Ta或W等高熔點金屬為優選。尤其，以Au而形成的金屬層，係大氣壓下其表面難以氧化，故接合時可在大氣壓下接合。以Cu、Hf、Ta或W而形成的金屬層，係在大氣壓下其表面容易氧化。金屬層，係從確保電導性、及確保熱導性的觀點而言，未形成氧化膜為理想。為此，金屬層，係在接合前，亦即在加壓程序前，真空條件下(1.0×10-4~1.0×10-8Pa)，藉採Ar 離子的濺鍍法等而除去該表面的氧化膜而表面活性化後，同樣的真空條件下作接合為優選。在金屬層的形成方法方面，係舉例氣相沉積法，雖無特別限定，惟可採用真空蒸鍍、濺鍍等。金屬層的厚度，係只要金屬層不會從基板剝離即可，優選上0.5nm~1μm的範圍，較優選上0.5~100nm。不足0.5nm時，在接合面容易產生空隙，接合後的接合力變不充分。1μm以上時，具有於金屬層形成時金屬層從基板剝離之虞。 The metal material forming the metal layer is preferably at least one selected from the group consisting of Au, Cu, Hf, Ta, and W. The metal layer is formed on the surface of the other substrate facing the interposer substrate. When joining with the interposer substrate, since it is desired that the metal layer is easily deformed due to the ductility of the metal material, Au or Cu is more preferable. Depending on the circumstances, when the metal component of the metal layer diffuses in the device etc. and affects the device after the substrate laminate is formed, it is preferable to use a high melting point metal such as Hf, Ta, or W that does not easily diffuse into the device. In particular, the surface of a metal layer formed of Au is difficult to oxidize under atmospheric pressure, so it can be joined under atmospheric pressure during bonding. The surface of a metal layer formed of Cu, Hf, Ta, or W is easily oxidized under atmospheric pressure. The metal layer is preferably not formed with an oxide film from the viewpoint of ensuring electrical conductivity and ensuring thermal conductivity. For this reason, the metal layer is removed from the surface before joining, that is, before the pressurization process, under vacuum conditions (1.0×10 -4 ~1.0×10 -8 Pa) by sputtering with Ar ions, etc. After surface activation of the oxide film, bonding under the same vacuum condition is preferred. Regarding the method of forming the metal layer, vapor deposition is an example. Although not particularly limited, vacuum evaporation, sputtering, etc. can be used. The thickness of the metal layer is sufficient as long as the metal layer does not peel off from the substrate, and is preferably in the range of 0.5 nm to 1 μm, more preferably 0.5 to 100 nm. When the thickness is less than 0.5 nm, voids are likely to occur on the bonding surface, and the bonding force after bonding becomes insufficient. When it is 1 μm or more, the metal layer may peel off from the substrate when the metal layer is formed.
依情況，亦可在導電性材料以從該表面超過0μm而突出至10μm以下的高度之形而填充的中介層基板的表面，優選上藉氣相沉積法而具備金屬層。亦即，可在加壓程序前，在與其他基板對向而予以接觸的中介層基板的表面，藉氣相沉積法而形成金屬層。此情況下，可利用與形成於其他基板的金屬層相同的金屬材料及手法，而將同樣的厚度的金屬層形成於中介層基板的表面上。此外，填充於中介層基板的貫通孔的金屬材料為Cu情況下，有時在該表面形成氧化膜，故在真空條件下(1.0×10-4~1.0×10-8Pa)，藉採Ar離子的濺鍍法等而除去氧化膜而表面活性化後，形成金屬層為優選。在中介層基板亦具備金屬層，使得可提高作為基板積層體時的接合強度。 Depending on the situation, the surface of the interposer substrate in which the conductive material is filled with a height exceeding 0 μm from the surface and protruding to a height of 10 μm or less may preferably be provided with a metal layer by vapor deposition. That is, before the pressurization process, the metal layer can be formed by vapor deposition on the surface of the interposer substrate facing and in contact with other substrates. In this case, the same metal material and method as the metal layer formed on other substrates can be used to form a metal layer with the same thickness on the surface of the interposer substrate. In addition, when the metal material filled in the through-hole of the interposer substrate is Cu, an oxide film may sometimes be formed on the surface, so under vacuum conditions (1.0×10 -4 ~1.0×10 -8 Pa), use Ar It is preferable to form a metal layer after removing the oxide film and activating the surface by an ion sputtering method or the like. The interposer substrate is also provided with a metal layer, so that the bonding strength when used as a substrate laminate can be improved.
將形成有作成如此而獲得的金屬層的其他基板的表面、及具備從具有貫通孔或溝部的打算接合之側的面而超過0μm突出至10μm以下的高度的導電性材料的中介層基板的表面予以對向，以5kgf/cm2以上作加壓從而 接合。亦即，使導電性材料從貫通孔或溝部而突出的中介層基板的表面、其他基板的形成金屬層的表面對向而予以接觸，以5kgf/cm2以上作加壓從而接合，獲得基板積層體。 The surface of another substrate on which the metal layer obtained in this way is formed, and the surface of an interposer substrate provided with a conductive material that protrudes from a surface with a through hole or a groove portion on the side where it is intended to be joined from more than 0 μm to a height of 10 μm or less They are opposed and joined by applying pressure at 5 kgf/cm 2 or more. That is, the surface of the interposer substrate where the conductive material protrudes from the through hole or the groove and the surface of the other substrate where the metal layer is formed are opposed and contacted, and pressure is applied at 5 kgf/cm 2 or more to join to obtain a substrate laminate. body.
接合時，予以接合的中介層基板的表面與其他基板的表面，係未形成氧化膜，此外表面被活性化為理想。為此，可在加壓程序前，在予以與其他基板對向的中介層的表面及/或其他基板的形成金屬層的表面，進行表面活性化處理。例如，在予以接合的表面形成氧化膜的情況下，或者使接合界面的接著強度提升的情況下，如上所述，真空條件下(1.0×10-4~1.0×10-8Pa)針對基板表面藉採Ar離子的濺鍍法等而除去氧化膜及/或表面活性化後，同樣的真空條件下作接合為優選。 At the time of bonding, it is desirable that the surface of the interposer substrate to be bonded and the surface of other substrates are not formed with an oxide film, and the surface is activated. For this reason, the surface of the interposer facing the other substrate and/or the surface of the other substrate on which the metal layer is formed may be subjected to surface activation treatment before the pressing process. For example, when an oxide film is formed on the surface to be bonded, or when the bonding strength of the bonding interface is improved, as described above, under vacuum conditions (1.0×10 -4 to 1.0×10 -8 Pa) for the substrate surface After removing the oxide film and/or surface activation by a sputtering method using Ar ions, etc., bonding is preferably performed under the same vacuum conditions.
在加壓時的壓力方面，係優選上5kgf/cm2以上，更優選上50kgf/cm2以上。作成不足5kgf/cm2時，採用導電性材料以從該表面超過0μm而突出至10μm以下的高度之形而填充的中介層基板的情況下，填充物的變形變不充分，在接合界面產生空隙，容易剝離。加壓時的保持時間，係非特別限定者，可設為優選上10秒~1小時，較優選上30秒~30分，更優選上1分~10分。不足10秒時，有時接合局部變不充分。此外，即使超過1小時，接合強度仍不變。接合，係可在大氣壓下進行，依情況亦可在真空壓(1.0×10-4~1.0×10-8Pa)下進行。例如，在未以中介層基板及其他基板的接合的表面難以氧化的Au覆蓋 的情況下，係在實施上述之表面活性化處理後，以不變的真空條件(1.0×10-4~1.0×10-8Pa)接合為優選。 In terms of the pressure during pressurization, it is preferably 5 kgf/cm 2 or more, and more preferably 50 kgf/cm 2 or more. When it is less than 5kgf/cm 2 , in the case of an interposer substrate filled with a conductive material in a form that exceeds 0 μm from the surface and protrudes to a height of 10 μm or less, the deformation of the filler becomes insufficient, and voids are generated at the joint interface. , Easy to peel off. The holding time during pressurization is not particularly limited, and it can be preferably 10 seconds to 1 hour, more preferably 30 seconds to 30 minutes, and more preferably 1 minute to 10 minutes. When it is less than 10 seconds, the bonding may become insufficient locally. In addition, even if it exceeds 1 hour, the bonding strength remains unchanged. The joining can be carried out under atmospheric pressure, or under vacuum pressure (1.0×10 -4 ~1.0×10 -8 Pa) depending on the situation. For example, if the surface of the interposer substrate and other substrates is not covered with Au, which is difficult to oxidize, the surface activation treatment is performed under constant vacuum conditions (1.0×10 -4 ~1.0× 10 -8 Pa) bonding is preferred.
藉以上的製造方法，可獲得在中介層基板上隔著金屬層而具備其他基板的中介層基板積層體。亦即，可獲得一種中介層基板積層體，其至少具備中介層基板、金屬層及其他基板，該中介層基板係具備：複數個貫通孔或溝部；以及填充於貫通孔或溝部，從具有貫通孔或溝部的打算接合之側的面而超過0μm突出至10μm以下的高度的導電性材料；該金屬層係具備於中介層基板的具有貫通孔或溝部的打算接合之側的面上；該其他基板係具備於金屬層上。依本發明時，隔著由具有展性的金屬材料所成之金屬層，而將中介層基板與其他基板作加壓接合，故採用例如奈米碳管等的導電性材料以從該表面超過0μm而突出至10μm以下的高度之形而填充的中介層基板的情況下，奈米碳管在接合界面被予以彎曲變形，且藉金屬層的金屬填埋因從貫通孔或溝部而突出的奈米碳管所產生的中介層基板與其他基板之間隙，故成為如下的基板積層體：在接合界面不予以產生空隙下，在接合界面的電氣連接性方面優異之散熱性佳、接合性方面優異。中介層基板積層體的填充物係在電氣連接性方面優異，故填充物的電阻率小，藉此可增加中介層基板積層體的電流容量。在電氣連接性的評價方法方面，係舉例：在填充了填充物的貫通孔的兩端面形成電極，測定電阻率。此外，中介層基板積層體係散熱性佳，故在藉形成於中介層的填充物而將在裝置 產生的熱作散熱時，可比歷來抑制裝置的溫度上升。在散熱性的評價方法方面，係舉例：藉熱成像儀而確認裝置溫度。再者，中介層基板積層體係接合性佳，空隙在中介層基板與其他基板的接合面少，具有要在之後的程序使用時適合的接合強度。例如，在作成中介層基板積層體後將其他基板側的一部分作研削加工的情況下，在中介層基板與其他基板的接合面剝離的可能性仍低。在接合性的評價方法方面，係舉例：針對將刀片***接合界面時是否會剝離作確認的方法。 With the above-mentioned manufacturing method, an interposer substrate laminated body provided with another substrate via a metal layer on an interposer substrate can be obtained. That is, an interposer substrate laminate can be obtained, which includes at least an interposer substrate, a metal layer, and other substrates. The interposer substrate includes: a plurality of through holes or grooves; The surface of the hole or groove on the side where it is intended to be joined is a conductive material that protrudes beyond 0 μm to a height of 10 μm or less; the metal layer is provided on the surface of the interposer substrate that has the through hole or groove on the side to be joined; the other The substrate is provided on the metal layer. According to the present invention, the interposer substrate and other substrates are press-bonded via a metal layer made of a malleable metal material. Therefore, conductive materials such as carbon nanotubes are used to exceed the surface. In the case of an interposer substrate filled with a shape of 0 μm and protruding to a height of 10 μm or less, the carbon nanotubes are bent and deformed at the bonding interface, and the metal of the metal layer fills the nanotubes that protrude from the through holes or grooves. The gap between the interposer substrate and other substrates created by the carbon tube makes it a laminate of the following substrates: without voids at the bonding interface, excellent electrical connection at the bonding interface, excellent heat dissipation, and excellent bonding . The filler system of the interposer substrate laminate is excellent in electrical connectivity, so the resistivity of the filler is small, thereby increasing the current capacity of the interposer substrate laminate. In terms of the evaluation method of electrical connectivity, an example is the formation of electrodes on both end surfaces of the through holes filled with fillers, and the measurement of electrical resistivity. In addition, the interposer substrate laminate system has good heat dissipation performance, so the filler formed in the interposer When the generated heat is used for heat dissipation, the temperature rise of the device can be suppressed compared with the past. In terms of the evaluation method of heat dissipation, for example: confirm the temperature of the device with a thermal imager. Furthermore, the interposer substrate build-up system has good bonding properties, with fewer voids on the bonding surface of the interposer substrate and other substrates, and has a suitable bonding strength to be used in subsequent procedures. For example, in the case where a part of the other substrate side is ground after the interposer substrate laminate is made, the possibility of peeling at the bonding surface of the interposer substrate and the other substrate is still low. In terms of the evaluation method of bondability, an example is a method for confirming whether the blade will peel off when the blade is inserted into the bonding interface.
本發明相關之中介層基板積層體的製程，係非特別限定者，將其一態樣示於圖1。據此，在中介層基板10的表面、其他基板13的表面形成金屬層14a、14b，而該中介層基板10係具備：複數個貫通孔11；填充於貫通孔11，從具有貫通孔11的打算接合之側的面而超過0μm突出至10μm以下的高度的導電性材料12(程序A)。將形成金屬層14a的中介層基板10的表面、同樣形成金屬層14b的其他基板13的表面予以對向，以5kgf/cm2以上作加壓從而接合，可獲得在中介層基板10上隔著金屬層14(由14a及14b所成)而具備其他基板13的中介層基板積層體16(程序B)。
The manufacturing process of the interposer substrate laminate related to the present invention is not particularly limited, and one aspect thereof is shown in FIG. 1. Accordingly, the
此外，將本發明相關之別的一態樣的中介層基板積層體的製程示於圖2。據此，在中介層基板20的表面、其他基板23的表面形成金屬層24a、24b，而該中介層基板20係具備：複數個溝部21a；填充於溝部21a，
從在之後的程序打算與其他基板23接合之側的面而超過0μm突出至10μm以下的高度的導電性材料22(程序A)。將形成金屬層24a的中介層基板20的表面、同樣形成金屬層24b的其他基板23的表面予以對向，以5kgf/cm2以上作加壓從而接合，獲得接合體25(程序B)。在與所獲得的接合體25的中介層基板20側的接合面係相反側的面實施蝕刻處理，而從溝部21a形成貫通孔21，可獲得在中介層基板20上隔著金屬層24(由24a及24b所成)而具備其他基板23的中介層基板積層體26(程序C)。
In addition, the manufacturing process of another aspect of the interposer substrate laminate related to the present invention is shown in FIG. 2. Accordingly, the
中介層基板積層體，係此外可為了在中介層基板的與其他基板作接合之面的相反側的面與配線基板等作接合，而可進一步具備金屬層。此情況下，填充於貫通孔的導電性材料，係如同與其他基板作接合之面，可於與配線基板等接合之面，亦從該表面超過0μm突出至10μm以下的高度。亦即，於中介層基板的兩面，填充於貫通孔的導電性材料從該表面超過0μm突出至10μm以下的高度的情況下，在兩面具備金屬層後，將各面與其他基板及配線基板作接合，使得可作成隔著金屬層而具備於配線基板上的中介層基板積層體。 The interposer substrate laminate may further include a metal layer for bonding to a wiring substrate or the like on a surface opposite to the surface of the interposer substrate for bonding with other substrates. In this case, the conductive material filled in the through hole is the same as the surface for bonding with other substrates, and the surface for bonding with a wiring board or the like also protrudes from the surface beyond 0 μm to a height of 10 μm or less. That is, when the conductive material filled in the through-holes on both sides of the interposer substrate protrudes from the surface beyond 0 μm to a height of 10 μm or less, the metal layers are provided on both sides, and each surface is combined with other substrates and wiring substrates. The bonding makes it possible to form an interposer substrate laminate provided on a wiring substrate with a metal layer interposed therebetween.
<實施例1> <Example 1>
在中介層基板方面，採用外徑150mm、厚度625μm的矽基板。在矽基板，藉Bosch程序，每1cm2以間距寬200μm形成2500個的直徑100μm、深度相對於基板的厚度方向100μm的溝部。在形成於矽基板的溝部的底部載置是觸媒的Fe/Al觸媒，利用乙炔氣體藉CVD法，1.0×103Pa的減壓環境、600℃下，使奈米碳管成長直到從矽基板的表面突出2μm程度。之後，將基板浸於12wt%的CuSO4溶液，藉採用恆電流儀的電解電鍍法(電流密度1mA/cm2)填充Cu，填埋溝部的內壁與奈米碳管之間的空隙，而獲得中介層基板。以電子顯微鏡(SEM)觀察中介層基板的剖面的結果(未圖示)，奈米碳管與Cu的複合體填充於貫通孔內，再者，填充至從矽基板的表面突出2μm的高度。 For the interposer substrate, a silicon substrate with an outer diameter of 150mm and a thickness of 625μm is used. On the silicon substrate, using the Bosch process, 2500 grooves with a diameter of 100 μm and a depth of 100 μm relative to the thickness direction of the substrate were formed per 1 cm 2 with a pitch of 200 μm in width. The Fe/Al catalyst, which is a catalyst, is placed on the bottom of the groove formed on the silicon substrate, and the carbon nanotubes are grown by the CVD method using acetylene gas under a reduced pressure of 1.0×10 3 Pa at 600° The surface of the silicon substrate protrudes by about 2 μm. After that, the substrate was immersed in a 12wt% CuSO 4 solution, and the Cu was filled with the electrolytic plating method (current density 1mA/cm 2 ) using a galvanograph to fill the gap between the inner wall of the trench and the carbon nanotube. Obtain the interposer substrate. As a result of observing the cross-section of the interposer substrate with an electron microscope (SEM) (not shown), the composite of carbon nanotubes and Cu was filled in the through hole, and then filled to a height of 2 μm protruding from the surface of the silicon substrate.
在其他基板方面，採用外徑150mm、厚度625μm的矽基板。在其他基板的表面，利用芝浦機電製CFS-4ES藉濺鍍法，將Au層形成30nm。再者，在具有從表面突出2μm的高度的填充物的中介層基板的表面，真空條件下(1.0×10-4~1.0×10-8Pa)，利用武藏野工程製常溫接合裝置實施採Ar離子的濺鍍法1分鐘而除去Cu的表面氧化膜後，藉與其他基板同樣的濺鍍法，將Au層形成30nm。 For other substrates, a silicon substrate with an outer diameter of 150mm and a thickness of 625μm is used. On the surface of other substrates, the Au layer was formed to 30 nm by sputtering using CFS-4ES manufactured by Shibaura Electromechanical Co., Ltd. Furthermore, on the surface of the interposer substrate with a filler protruding 2 μm from the surface, under vacuum conditions (1.0×10 -4 to 1.0×10 -8 Pa), Ar After the ion sputtering method was used for 1 minute to remove the surface oxide film of Cu, the Au layer was formed to 30 nm by the same sputtering method as the other substrates.
接著，將分別形成Au的金屬層的中介層基板的表面與其他基板的表面，在大氣壓及室溫(25℃)下，對向予以接觸後，利用TESTER SANGYO製熱壓接合裝置，施加60kgf/cm2的負載而保持1分鐘從而進行接合，獲得 接合體。在所獲得的接合體的中介層基板側的與其他基板作接合的面的相反側的面，利用CMP(Chemical Mechanical Polishing)研磨裝置，而予以薄化直到中介層基板側的厚度成為100μm，從溝部形成貫通孔，從而獲得在中介層基板上隔著金屬層而具備其他基板的中介層基板積層體。 Next, the surface of the interposer substrate on which the metal layer of Au is formed and the surface of the other substrates are opposed to each other at atmospheric pressure and room temperature (25°C), and then 60kgf/ The load of cm 2 was maintained for 1 minute to perform bonding, and a bonded body was obtained. Using a CMP (Chemical Mechanical Polishing) polishing device, the surface of the obtained bonded body on the side of the interposer substrate opposite to the surface for bonding with other substrates was thinned until the thickness on the side of the interposer substrate became 100 μm. A through hole is formed in the groove, thereby obtaining an interposer substrate laminate having another substrate on the interposer substrate with a metal layer interposed therebetween.
所得的中介層基板積層體，係在接合界面***刀片仍不會剝離，保持著接合狀態。以SEM觀察中介層基板積層體的剖面的結果(未圖示)，可確認：填充於貫通孔的奈米碳管與Cu，係於接合界面發生彎曲變形，中介層基板與其他基板，係在接合界面未形成空隙下接合。此外，為了評價中介層基板積層體的熱擴散性，利用熱板，而從是一方的端面的其他基板側，60分鐘、100℃下加熱而作成穩定狀態，針對是另一方的端面的中介層基板側的表面溫度，利用紅外攝影機而以熱成像儀作測定。結果，中介層基板側的表面溫度係95℃，從表現出與從其他基板側供予的熱源的溫度大致同溫度，可確認中介層基板積層體具有高散熱性。 The obtained interposer substrate laminate does not peel off after inserting the blade at the bonding interface, and maintains the bonded state. Observation of the cross section of the interposer substrate laminate by SEM (not shown) showed that the carbon nanotubes and Cu filled in the through-holes were bent and deformed at the bonding interface, and the interposer substrate and other substrates were The bonding interface does not form a gap under bonding. In addition, in order to evaluate the thermal diffusibility of the interposer substrate laminate, a hot plate was used to heat the other substrate side at one end surface for 60 minutes at 100°C to create a stable state. For the interposer on the other end surface The surface temperature on the side of the substrate is measured with a thermal imager using an infrared camera. As a result, the surface temperature on the side of the interposer substrate was 95°C, and it was confirmed that the interposer substrate laminate had a high heat dissipation performance, since it exhibited approximately the same temperature as the temperature of the heat source supplied from the other substrate side.
<實施例2> <Example 2>
作成如同實施例1，而獲得在溝部填充奈米碳管及Cu至從矽基板的表面突出1μm的高度的中介層基板。 In the same manner as in Example 1, an interposer substrate in which carbon nanotubes and Cu were filled in the grooves to a height of 1 μm protruding from the surface of the silicon substrate was obtained.
在其他基板方面，採用外徑150mm、厚度625μm的矽基板。在其他基板的表面，利用芝浦機電製CFS-4ES 藉濺鍍法，將Au層形成30nm。 For other substrates, a silicon substrate with an outer diameter of 150mm and a thickness of 625μm is used. On the surface of other substrates, use Shibaura Mechatronics CFS-4ES By sputtering, the Au layer was formed to 30 nm.
接著，在具有該從表面突出1μm的高度的填充物的中介層基板的表面、形成Au的金屬層的其他基板的表面，1.0×10-6Pa的真空條件及室溫(25℃)下，利用武藏野工程製常溫接合裝置實施採Ar離子的濺鍍法1分鐘，而進行中介層基板上的Cu的表面氧化膜的除去、及表面活性化。之後，將表面活性化處理的中介層基板的表面與其他基板的表面，1.0×10-6Pa的真空條件及室溫(25℃)下，對向予以接觸後，在同真空條件及室溫下，利用武藏野工程製常溫接合裝置，施加60kgf/cm2的負載而保持1分鐘從而進行接合以外係作成如同實施例1而進行，獲得中介層基板積層體。 Next, on the surface of the interposer substrate with the filler protruding 1 μm from the surface and the surface of the other substrate on which the Au metal layer is formed, under a vacuum condition of 1.0×10 -6 Pa and room temperature (25°C), A sputtering method using Ar ions was performed using a room temperature bonding device manufactured by Musashino Engineering for 1 minute to remove and activate the Cu surface oxide film on the interposer substrate. After that, the surface of the surface-activated interposer substrate and the surface of other substrates were contacted in opposite directions under a vacuum condition of 1.0×10 -6 Pa and room temperature (25°C), and then under the same vacuum condition and room temperature. Next, using a normal temperature bonding device manufactured by Musashino Engineering, a load of 60 kgf/cm 2 was applied and maintained for 1 minute to perform bonding. The system was prepared as in Example 1, and an interposer substrate laminate was obtained.
所得的中介層基板積層體，係在接合界面***刀片仍不會剝離，保持著接合狀態。以SEM觀察中介層基板積層體的剖面的結果(未圖示)，可確認：填充於貫通孔的奈米碳管與Cu，係於接合界面發生彎曲變形，中介層基板與其他基板，係在接合界面未形成空隙下接合。此外，作成如同實施例1，而評價中介層基板積層體的熱擴散性的結果，中介層基板積層體的中介層基板側的表面溫度係90℃，可確認中介層基板積層體具有高散熱性。 The obtained interposer substrate laminate does not peel off after inserting the blade at the bonding interface, and maintains the bonded state. Observation of the cross section of the interposer substrate laminate by SEM (not shown) showed that the carbon nanotubes and Cu filled in the through-holes were bent and deformed at the bonding interface, and the interposer substrate and other substrates were The bonding interface does not form a gap under bonding. In addition, the result of evaluating the thermal diffusibility of the interposer substrate laminate in the same manner as in Example 1 showed that the surface temperature of the interposer substrate side of the interposer substrate laminate was 90°C, which confirmed that the interposer substrate laminate has high heat dissipation properties. .
<實施例3> <Example 3>
施加30kgf/cm2的負載而保持1分鐘從而進行接合以外，係作成如同實施例1而進行，獲得中介層基板積層 體。 Except that a load of 30 kgf/cm 2 was applied and held for 1 minute to perform bonding, the preparation was performed as in Example 1, and an interposer substrate laminate was obtained.
所得的中介層基板積層體，係在接合界面***刀片仍不會剝離，保持著接合狀態。以SEM觀察中介層基板積層體的剖面的結果(未圖示)，可確認：填充於貫通孔的奈米碳管與Cu，係於接合界面發生彎曲變形，即使比實施例1減小加壓時的負載，中介層基板與其他基板，仍在接合界面未形成空隙下接合。此外，作成如同實施例1，而評價中介層基板積層體的熱擴散性的結果，中介層基板積層體的中介層基板側的表面溫度係93℃，可確認中介層基板積層體具有高散熱性。 The obtained interposer substrate laminate does not peel off after inserting the blade at the bonding interface, and maintains the bonded state. Observing the cross section of the interposer substrate laminate by SEM (not shown), it can be confirmed that the carbon nanotubes and Cu filled in the through holes are bent and deformed at the bonding interface, even though the pressure is reduced compared to Example 1. Under the load at the time, the interposer substrate and other substrates are still bonded without forming a gap at the bonding interface. In addition, the result of evaluating the thermal diffusibility of the interposer substrate laminate in the same manner as in Example 1 showed that the surface temperature of the interposer substrate side of the interposer substrate laminate was 93°C, which confirmed that the interposer substrate laminate has high heat dissipation properties. .
<實施例4> <Example 4>
作成如同實施例1而在分別形成Au的金屬層的中介層基板的表面與其他基板的表面，1.0×10-6Pa的真空條件及室溫(25℃)下，利用武藏野工程製常溫接合裝置實施採Ar離子的濺鍍法1分鐘，而進行表面活性化。之後，將表面活性化處理的中介層基板的表面與其他基板的表面，1.0×10-6Pa的真空條件及室溫(25℃)下，對向予以接觸後，利用武藏野工程製常溫接合裝置，施加30kgf/cm2的負載而保持1分鐘從而進行接合以外係作成如同實施例1而進行，獲得中介層基板積層體。 As in Example 1, the surface of the interposer substrate where the metal layer of Au was formed separately and the surface of the other substrates were joined at a vacuum condition of 1.0×10 -6 Pa and room temperature (25°C) at room temperature (25°C) manufactured by Musashino Engineering The device performs a sputtering method using Ar ions for 1 minute to activate the surface. After that, the surface of the surface-activated interposer substrate and the surface of other substrates are in contact with each other under vacuum conditions of 1.0×10 -6 Pa and room temperature (25°C), and then they are joined at room temperature by Musashino Engineering. The device applied a load of 30 kgf/cm 2 and held it for 1 minute to perform bonding. The system was prepared as in Example 1, and an interposer substrate laminate was obtained.
所得的中介層基板積層體，係在接合界面***刀片仍不會剝離，保持著接合狀態。以SEM觀察中介層基板積層體的剖面的結果(未圖示)，可確認：填充於貫通孔的 奈米碳管與Cu，係於接合界面發生彎曲變形，即使比實施例1減小加壓時的負載，中介層基板與其他基板，仍在接合界面未形成空隙下接合。此外，作成如同實施例1，而評價中介層基板積層體的熱擴散性的結果，中介層基板積層體的中介層基板側的表面溫度係93℃，可確認中介層基板積層體具有高散熱性。 The obtained interposer substrate laminate does not peel off after inserting the blade at the bonding interface, and maintains the bonded state. Observing the cross-section of the interposer substrate laminate by SEM (not shown), it can be confirmed that: Carbon nanotubes and Cu are bent and deformed at the bonding interface. Even if the load under pressure is reduced compared to Example 1, the interposer substrate and other substrates are bonded without forming a gap at the bonding interface. In addition, the result of evaluating the thermal diffusibility of the interposer substrate laminate in the same manner as in Example 1 showed that the surface temperature of the interposer substrate side of the interposer substrate laminate was 93°C, which confirmed that the interposer substrate laminate has high heat dissipation properties. .
<實施例5> <Example 5>
施加6kgf/cm2的負載而保持1分鐘從而進行接合以外，係作成如同實施例1而進行，獲得中介層基板積層體。 Except that a load of 6 kgf/cm 2 was applied and held for 1 minute to perform bonding, the preparation was performed as in Example 1, and an interposer substrate laminate was obtained.
所得的中介層基板積層體，係在接合界面***刀片仍不會剝離，保持著接合狀態。以SEM觀察中介層基板積層體的剖面的結果(未圖示)，可確認：填充於貫通孔的奈米碳管與Cu，係於接合界面發生彎曲變形，即使比實施例1及3減小加壓時的負載，中介層基板與其他基板，仍在接合界面未形成空隙下接合。此外，作成如同實施例1，而評價中介層基板積層體的熱擴散性的結果，中介層基板積層體的中介層基板側的表面溫度係91℃，可確認中介層基板積層體具有高散熱性。 The obtained interposer substrate laminate does not peel off after inserting the blade at the bonding interface, and maintains the bonded state. Observation of the cross-section of the interposer substrate laminate by SEM (not shown) confirmed that the carbon nanotubes and Cu filled in the through-holes were bent and deformed at the bonding interface, even though they were smaller than those of Examples 1 and 3. When the load is applied, the interposer substrate and other substrates are still bonded without forming a gap at the bonding interface. In addition, the result of evaluating the thermal diffusibility of the interposer substrate laminate in the same manner as in Example 1 showed that the surface temperature of the interposer substrate side of the interposer substrate laminate was 91°C, which confirmed that the interposer substrate laminate has high heat dissipation properties. .
<比較例1> <Comparative Example 1>
施加1kgf/cm2的負載而保持1分鐘從而進行接合以外，係作成如同實施例1而進行，獲得中介層基板積層 體。所得的中介層基板積層體，係打算開放加壓並從裝置取出的結果，在接合界面剝離，無法保持接合狀態。接合時的負載不充分時，無法使填充於貫通孔的奈米碳管與Cu於接合界面彎曲變形，在接合界面產生空隙，而應未接合。 Except that a load of 1 kgf/cm 2 was applied and held for 1 minute to perform bonding, the preparation was performed as in Example 1, and an interposer substrate laminate was obtained. The obtained interposer substrate laminate was intended to be released under pressure and taken out from the device, but it was peeled off at the bonding interface, and the bonded state could not be maintained. When the load during the joining is insufficient, the carbon nanotubes filled in the through holes and Cu cannot be bent and deformed at the joining interface, and voids are generated at the joining interface, so the joint should not be joined.
<比較例2> <Comparative Example 2>
施加1kgf/cm2的負載而保持1分鐘從而進行接合以外，係作成如同實施例2而進行，獲得中介層基板積層體。所得的中介層基板積層體，係打算開放加壓並從裝置取出的結果，在接合界面剝離，無法保持接合狀態。比起比較例1，增加以採Ar離子的濺鍍法的表面活性化，惟無法予以接合。接合時的負載不充分時，無法使填充於貫通孔的奈米碳管與Cu於接合界面彎曲變形，在接合界面產生空隙，而應未接合。 Except that a load of 1 kgf/cm 2 was applied and held for 1 minute to perform bonding, the preparation was performed as in Example 2 to obtain an interposer substrate laminate. The obtained interposer substrate laminate was intended to be released under pressure and taken out from the device, but it was peeled off at the bonding interface, and the bonded state could not be maintained. Compared with Comparative Example 1, the surface activation by the sputtering method using Ar ions was increased, but the bonding was not possible. When the load during the joining is insufficient, the carbon nanotubes filled in the through holes and Cu cannot be bent and deformed at the joining interface, and voids are generated at the joining interface, so the joint should not be joined.
<比較例3> <Comparative Example 3>
利用與實施例1同樣的手法，而製作在溝部填充從矽基板的表面突出至20μm的高度的奈米碳管與Cu的中介層基板以外，係作成如同實施例1而進行，獲得基板積層體。所得的基板積層體，係打算開放加壓並從裝置取出的結果，在接合界面剝離，無法保持接合狀態。雖與實施例1同樣的接合條件，惟在比較例3的中介層基板，係填充於貫通孔的奈米碳管與Cu的從基板表面的高度過高，故 在面整體的接合應是變不充分。 Using the same method as in Example 1, an interposer substrate with carbon nanotubes and Cu protruding from the surface of the silicon substrate to a height of 20 μm was filled in the grooves. The process was performed as in Example 1, and a substrate laminate was obtained. . The resulting substrate laminate was intended to be released under pressure and taken out from the device, but it peeled off at the bonding interface and could not maintain the bonded state. Although the bonding conditions are the same as in Example 1, in the interposer substrate of Comparative Example 3, the height of the carbon nanotubes and Cu filled in the through holes from the surface of the substrate is too high. The bonding on the entire surface should become insufficient.
在上述之實施例，係為了確認中介層基板的接合性，而利用具備溝部的矽基板形成中介層基板，惟並非限定於此者，採用其他中介層基板的情況下亦獲得同樣的效果。 In the above-mentioned embodiment, in order to confirm the bonding of the interposer substrate, the interposer substrate is formed by a silicon substrate provided with grooves. However, it is not limited to this. The same effect can be obtained when other interposer substrates are used.
10‧‧‧中介層基板 10‧‧‧Interposer substrate
11‧‧‧中介層基板的貫通孔 11‧‧‧Through hole of interposer substrate
12‧‧‧導電性材料 12‧‧‧Conductive material
13‧‧‧其他基板 13‧‧‧Other substrates
14、14a、14b‧‧‧金屬層 14, 14a, 14b‧‧‧Metal layer
16‧‧‧中介層基板積層體 16‧‧‧Interposer substrate laminate
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