TWI732047B - 發光二極體晶片的製造方法及發光二極體晶片 - Google Patents

發光二極體晶片的製造方法及發光二極體晶片 Download PDF

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Publication number: TWI732047B
Authority: TW; Taiwan
Prior art keywords: wafer; light; emitting diode; transparent substrate; transparent
Prior art date: 2016-11-04

Application number

TW106133663A

Other languages

English (en)

Chinese (zh)

Other versions

TW201830723A (zh

Inventor

岡村卓

北村宏

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-11-04

Filing date

2017-09-29

Publication date

2021-07-01

2017-09-29 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2018-08-16 Publication of TW201830723A publication Critical patent/TW201830723A/zh

2021-07-01 Application granted granted Critical

2021-07-01 Publication of TWI732047B publication Critical patent/TWI732047B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 13
238000000034 method Methods 0.000 title claims abstract description 12
239000000758 substrate Substances 0.000 claims abstract description 84
230000010354 integration Effects 0.000 claims abstract description 12
239000013078 crystal Substances 0.000 claims abstract description 7
238000002360 preparation method Methods 0.000 claims abstract description 6
238000005520 cutting process Methods 0.000 claims description 24
229910052594 sapphire Inorganic materials 0.000 claims description 11
239000010980 sapphire Substances 0.000 claims description 11
239000004065 semiconductor Substances 0.000 claims description 7
239000005304 optical glass Substances 0.000 claims description 4
239000011347 resin Substances 0.000 claims description 4
229920005989 resin Polymers 0.000 claims description 4
239000000853 adhesive Substances 0.000 claims description 3
230000001070 adhesive effect Effects 0.000 claims description 3
239000000919 ceramic Substances 0.000 claims description 3
238000005488 sandblasting Methods 0.000 claims description 3
238000005530 etching Methods 0.000 claims description 2
239000003795 chemical substances by application Substances 0.000 claims 1
235000012431 wafers Nutrition 0.000 description 69
230000003287 optical effect Effects 0.000 description 9
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
238000001816 cooling Methods 0.000 description 3
229910002601 GaN Inorganic materials 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
238000002679 ablation Methods 0.000 description 2
238000010030 laminating Methods 0.000 description 2
239000006061 abrasive grain Substances 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
239000002173 cutting fluid Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
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229910052759 nickel Inorganic materials 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
238000007747 plating Methods 0.000 description 1
229920000515 polycarbonate Polymers 0.000 description 1
239000004417 polycarbonate Substances 0.000 description 1
230000011218 segmentation Effects 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Devices (AREA)
Dicing (AREA)
Led Device Packages (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

TW106133663A 2016-11-04 2017-09-29 發光二極體晶片的製造方法及發光二極體晶片 TWI732047B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2016-216395		2016-11-04
JP2016216395A JP2018074109A (ja)	2016-11-04	2016-11-04	発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (2)

Publication Number	Publication Date
TW201830723A TW201830723A (zh)	2018-08-16
TWI732047B true TWI732047B (zh)	2021-07-01

Family

ID=62079569

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW106133663A TWI732047B (zh)	2016-11-04	2017-09-29	發光二極體晶片的製造方法及發光二極體晶片

Country Status (4)

Country	Link
JP (1)	JP2018074109A (ja)
KR (1)	KR102327105B1 (ja)
CN (1)	CN108022999A (ja)
TW (1)	TWI732047B (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005093728A (ja) *	2003-09-17	2005-04-07	Toyoda Gosei Co Ltd	発光装置
US20130032835A1 (en) *	2011-06-15	2013-02-07	Shatalov Maxim S	Device with Inverted Large Scale Light Extraction Structures
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006278751A (ja) *	2005-03-29	2006-10-12	Mitsubishi Cable Ind Ltd	ＧａＮ系半導体発光素子
KR20070000952A (ko) *	2005-06-27	2007-01-03	주식회사 엘지화학	열방출이 개선된 전면발광형 발광다이오드 소자의 제조방법
JP5187610B2 (ja) *	2006-03-29	2013-04-24	スタンレー電気株式会社	窒化物半導体ウエハないし窒化物半導体装置及びその製造方法
JP2011009305A (ja) *	2009-06-23	2011-01-13	Koito Mfg Co Ltd	発光モジュール
KR101726807B1 (ko) *	2010-11-01	2017-04-14	삼성전자주식회사	반도체 발광소자
TWI581458B (zh) *	2012-12-07	2017-05-01	晶元光電股份有限公司	發光元件
JP2014175362A (ja) *	2013-03-06	2014-09-22	Toshiba Corp	半導体発光素子及びその製造方法
JP2014175354A (ja)	2013-03-06	2014-09-22	Disco Abrasive Syst Ltd	発光ダイオード
KR101426433B1 (ko) *	2013-04-30	2014-08-06	주식회사 세미콘라이트	반도체 발광소자를 제조하는 방법
JP6401248B2 (ja) *	2013-05-15	2018-10-10	コーニンクレッカフィリップスエヌヴェＫｏｎｉｎｋｌｉｊｋｅＰｈｉｌｉｐｓＮ．Ｖ．	基板内に散乱機構を有するｌｅｄ
JP6255235B2 (ja) *	2013-12-20	2017-12-27	株式会社ディスコ	発光チップ
US20150353417A1 (en) *	2013-12-26	2015-12-10	Shin-Etsu Quartz Products Co., Ltd.	Quartz glass member for wavelength conversion and method of manufacturing the same
JP6255255B2 (ja) *	2014-01-27	2017-12-27	株式会社ディスコ	光デバイスの加工方法
JP2015192100A (ja) *	2014-03-28	2015-11-02	豊田合成株式会社	発光素子および発光素子の製造方法
TW201614870A (en) *	2014-10-08	2016-04-16	Toshiba Kk	Semiconductor light emitting device and method for manufacturing the same

2016
- 2016-11-04 JP JP2016216395A patent/JP2018074109A/ja active Pending
2017
- 2017-09-29 TW TW106133663A patent/TWI732047B/zh active
- 2017-10-25 CN CN201711005663.2A patent/CN108022999A/zh active Pending
- 2017-11-01 KR KR1020170144549A patent/KR102327105B1/ko active IP Right Grant

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005093728A (ja) *	2003-09-17	2005-04-07	Toyoda Gosei Co Ltd	発光装置
US20130032835A1 (en) *	2011-06-15	2013-02-07	Shatalov Maxim S	Device with Inverted Large Scale Light Extraction Structures
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法

Also Published As

Publication number	Publication date
KR20180050230A (ko)	2018-05-14
KR102327105B1 (ko)	2021-11-15
TW201830723A (zh)	2018-08-16
JP2018074109A (ja)	2018-05-10
CN108022999A (zh)	2018-05-11

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