KR102327105B1 - 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 - Google Patents

발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 Download PDF

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Publication number
KR102327105B1
KR102327105B1 KR1020170144549A KR20170144549A KR102327105B1 KR 102327105 B1 KR102327105 B1 KR 102327105B1 KR 1020170144549 A KR1020170144549 A KR 1020170144549A KR 20170144549 A KR20170144549 A KR 20170144549A KR 102327105 B1 KR102327105 B1 KR 102327105B1
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KR
South Korea
Prior art keywords
transparent substrate
light emitting
wafer
emitting diode
diode chip
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Application number
KR1020170144549A
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English (en)
Korean (ko)
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KR20180050230A (ko
Inventor
다카시 오카무라
히로시 기타무라
Original Assignee
가부시기가이샤 디스코
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20180050230A publication Critical patent/KR20180050230A/ko
Application granted granted Critical
Publication of KR102327105B1 publication Critical patent/KR102327105B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020170144549A 2016-11-04 2017-11-01 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 KR102327105B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-216395 2016-11-04
JP2016216395A JP2018074109A (ja) 2016-11-04 2016-11-04 発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (2)

Publication Number Publication Date
KR20180050230A KR20180050230A (ko) 2018-05-14
KR102327105B1 true KR102327105B1 (ko) 2021-11-15

Family

ID=62079569

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170144549A KR102327105B1 (ko) 2016-11-04 2017-11-01 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩

Country Status (4)

Country Link
JP (1) JP2018074109A (ja)
KR (1) KR102327105B1 (ja)
CN (1) CN108022999A (ja)
TW (1) TWI732047B (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
KR101426433B1 (ko) 2013-04-30 2014-08-06 주식회사 세미콘라이트 반도체 발광소자를 제조하는 방법
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4232585B2 (ja) * 2003-09-17 2009-03-04 豊田合成株式会社 発光装置
JP2006278751A (ja) * 2005-03-29 2006-10-12 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
KR20070000952A (ko) * 2005-06-27 2007-01-03 주식회사 엘지화학 열방출이 개선된 전면발광형 발광다이오드 소자의 제조방법
JP5187610B2 (ja) * 2006-03-29 2013-04-24 スタンレー電気株式会社 窒化物半導体ウエハないし窒化物半導体装置及びその製造方法
JP2011009305A (ja) * 2009-06-23 2011-01-13 Koito Mfg Co Ltd 発光モジュール
KR101726807B1 (ko) * 2010-11-01 2017-04-14 삼성전자주식회사 반도체 발광소자
TWI581458B (zh) * 2012-12-07 2017-05-01 晶元光電股份有限公司 發光元件
JP2014175362A (ja) * 2013-03-06 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
JP2014175354A (ja) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
JP6401248B2 (ja) * 2013-05-15 2018-10-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 基板内に散乱機構を有するｌｅｄ
JP6255235B2 (ja) * 2013-12-20 2017-12-27 株式会社ディスコ 発光チップ
US20150353417A1 (en) * 2013-12-26 2015-12-10 Shin-Etsu Quartz Products Co., Ltd. Quartz glass member for wavelength conversion and method of manufacturing the same
JP6255255B2 (ja) * 2014-01-27 2017-12-27 株式会社ディスコ 光デバイスの加工方法
JP2015192100A (ja) * 2014-03-28 2015-11-02 豊田合成株式会社 発光素子および発光素子の製造方法
TW201614870A (en) * 2014-10-08 2016-04-16 Toshiba Kk Semiconductor light emitting device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
KR101426433B1 (ko) 2013-04-30 2014-08-06 주식회사 세미콘라이트 반도체 발광소자를 제조하는 방법
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法

Also Published As

Publication number Publication date
KR20180050230A (ko) 2018-05-14
TW201830723A (zh) 2018-08-16
JP2018074109A (ja) 2018-05-10
TWI732047B (zh) 2021-07-01
CN108022999A (zh) 2018-05-11

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