TWI729796B - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
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- TWI729796B TWI729796B TW109114823A TW109114823A TWI729796B TW I729796 B TWI729796 B TW I729796B TW 109114823 A TW109114823 A TW 109114823A TW 109114823 A TW109114823 A TW 109114823A TW I729796 B TWI729796 B TW I729796B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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Abstract
本發明之半導體裝置之製造方法,具備:(I)將依序設置有第1支持片(23)和熱硬化性樹脂層(25)之第1保護膜形成用薄膜(20),以將熱硬化性樹脂層(25)作為貼合面之方式,貼合在半導體晶圓(10)之設置有凸塊(11)之表面的工程;(II)從熱硬化性樹脂層(25)剝離第1支持片(23)的工程;(III)加熱熱硬化性樹脂層(25)而使其硬化,形成保護膜的工程;及(IV)與熱硬化性樹脂層或保護膜同時切割半導體晶圓(10)的工程。 The manufacturing method of the semiconductor device of the present invention includes: (I) a first protective film forming film (20) provided with a first support sheet (23) and a thermosetting resin layer (25) in order to heat The process of bonding the curable resin layer (25) as the bonding surface on the surface of the semiconductor wafer (10) where the bumps (11) are provided; (II) peeling off the second layer from the thermosetting resin layer (25) 1 Process of supporting sheet (23); (III) Process of heating and curing the thermosetting resin layer (25) to form a protective film; and (IV) Cutting the semiconductor wafer at the same time as the thermosetting resin layer or protective film (10) The project.
Description
本發明係關於半導體裝置之製造方法,詳細而言,關於使用以保護膜至少保護凸塊面的半導體晶片的半導體裝置之製造方法。 The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device using a semiconductor wafer whose bump surface is protected by a protective film.
以往,進行使用被稱為倒裝方式之安裝法的半導體裝置之製造。在倒裝方式中,在半導體晶片之表面形成被稱為凸塊的電極部,同時使其晶片表面與基板等相向,而在基板上搭載半導體晶片。 In the past, semiconductor devices were manufactured using a mounting method called a flip-chip method. In the flip-chip method, electrode portions called bumps are formed on the surface of a semiconductor wafer, and the surface of the wafer is opposed to a substrate, etc., and the semiconductor wafer is mounted on the substrate.
在倒裝方式中被使用之半導體晶圓或半導體晶片,為了各種目的,有在設置有凸塊之晶圓表面,設置持有各種功能的樹脂層之情形。再者,半導體晶圓一般係在背面被研削時,為了保護晶圓之表面,黏貼有背面研磨片。因此,以往,有使用將背面研磨片和各種樹脂層予以疊層而成為一體化的疊層片之情形。 For the semiconductor wafers or semiconductor wafers used in the flip-chip method, for various purposes, there are cases where a resin layer with various functions is provided on the surface of the wafer provided with bumps. Furthermore, when the semiconductor wafer is generally ground on the back side, in order to protect the surface of the wafer, a backside polishing sheet is attached. Therefore, in the past, there has been a case where a back polishing sheet and various resin layers are laminated to form an integrated laminate sheet.
專利文獻1中,作為如此之疊層片,揭示具備與電路面相接的熱硬化性樹脂層,和直接被疊層在該層上,具有柔軟性之熱可塑性樹脂層,和進一步被疊層在熱 可塑性樹脂層上,以樹脂薄膜等所構成之最外層者。該疊層片係於背面研削時被黏貼於半導體晶圓表面而保護半導體晶圓。再者,於背面研削後,熱可塑性樹脂層和最外層從熱硬化性樹脂層被剝離,另外,殘留在半導體晶圓上之熱硬化性樹脂層,係於半導體晶片被搭載於基板之後被硬化而當作密封樹脂而被使用。 In Patent Document 1, as such a laminated sheet, it is disclosed that a thermosetting resin layer is provided in contact with the circuit surface, and a thermoplastic resin layer having flexibility is directly laminated on this layer, and further laminated In heat On the plastic resin layer, the outermost layer composed of resin film or the like. The laminated sheet is adhered to the surface of the semiconductor wafer during back grinding to protect the semiconductor wafer. Furthermore, after the backside grinding, the thermoplastic resin layer and the outermost layer are peeled off from the thermosetting resin layer. In addition, the thermosetting resin layer remaining on the semiconductor wafer is hardened after the semiconductor wafer is mounted on the substrate. It is used as a sealing resin.
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2005-28734號公報 [Patent Document 1] JP 2005-28734 A
但是,被設置在晶圓表面之凸塊係應力集中於作為半導體晶圓和凸塊之連接部分的凸塊頸,而容易引起破損。在專利文獻1中,雖然在半導體晶片之凸塊面設置熱硬化性樹脂層,但是該樹脂層只是密封半導體晶片和基板之間的間隙,並非保證藉由如此之密封樹脂可以迴避凸塊頸的破損。 However, the stress of the bump system provided on the surface of the wafer is concentrated on the bump neck which is the connecting part of the semiconductor wafer and the bump, and it is easy to cause damage. In Patent Document 1, although a thermosetting resin layer is provided on the bump surface of the semiconductor wafer, the resin layer only seals the gap between the semiconductor wafer and the substrate, and does not guarantee that the bump neck can be avoided by such a sealing resin. damaged.
本發明係鑒於上述問題點而創作出,本發明之課題在於提供具有凸塊之半導體晶圓中,可以防止在凸塊頸之破損的半導體裝置之製造方法。 The present invention was created in view of the above-mentioned problems. The object of the present invention is to provide a method for manufacturing a semiconductor device that can prevent damage to the bump neck in a semiconductor wafer with bumps.
本發明者精心研究結果,發現藉由特定之工程,在設置有凸塊之半導體晶圓之表面(凸塊面)上,疊層熱硬化性樹脂層並且進行熱硬化,依此將凸塊頸埋入至保護膜內部而可以充分保護,而完成以下本發明。本發明提供以下的(1)~(7)。 As a result of careful research, the inventors found that through a specific process, a thermosetting resin layer was laminated on the surface (bump surface) of the semiconductor wafer provided with bumps and thermally cured, and the bump neck It is embedded in the protective film and can be fully protected, and the following invention is completed. The present invention provides the following (1) to (7).
(1)一種半導體裝置之製造方法,具備: (1) A method of manufacturing a semiconductor device, comprising:
將依序設置有第1支持片和熱硬化性樹脂層之第1保護膜形成用薄膜,以將上述熱硬化性樹脂層作為貼合面之方式,貼合在半導體晶圓之設置有凸塊之表面的工程; The first protective film forming film provided with the first support sheet and the thermosetting resin layer in this order is bonded to the semiconductor wafer provided with bumps using the thermosetting resin layer as the bonding surface The surface engineering;
從上述熱硬化性樹脂層剝離上述第1支持片的工程; The process of peeling the first support sheet from the thermosetting resin layer;
與熱硬化性樹脂層同時切割上述半導體晶圓的工程;及 The process of cutting the above-mentioned semiconductor wafer simultaneously with the thermosetting resin layer; and
藉由回焊時之加熱使上述熱硬化性樹脂層硬化,形成保護膜的工程。 The process of hardening the above-mentioned thermosetting resin layer by heating during reflow to form a protective film.
(2)如上述(1)記載之半導體裝置之製造方法,其中 (2) The method of manufacturing a semiconductor device as described in (1) above, wherein
進一步具備: Further equipped with:
在半導體晶圓之背面貼合第2保護膜形成層的工程; The process of attaching the second protective film forming layer to the back of the semiconductor wafer;
加熱上述第2保護膜形成層,而形成第2保護膜的工程;及 The process of heating the above-mentioned second protective film forming layer to form a second protective film; and
在上述半導體晶圓之背面上之上述第2保護膜形成層,或第2保護膜之上面進一步貼合第2支持片的工程。 A process of further laminating a second support sheet on the second protective film forming layer on the back surface of the semiconductor wafer, or on the upper surface of the second protective film.
(3)如上述(1)記載之半導體裝置之製造方法,其中 (3) The method of manufacturing a semiconductor device as described in (1) above, wherein
進一步具備: Further equipped with:
將具備第2支持片和被設置在上述第2支持片上之第2保護膜形成層的第2保護膜形成用薄膜,以使上述第2保護膜形成層成為貼合面之方式,貼合在上述半導體晶圓之背面的工程;和 A second protective film forming film provided with a second support sheet and a second protective film forming layer provided on the second support sheet is attached so that the second protective film forming layer becomes a bonding surface The engineering of the backside of the aforementioned semiconductor wafer; and
加熱上述第2保護膜形成層,而形成第2保護膜的工程。 A process of heating the above-mentioned second protective film forming layer to form a second protective film.
(4)如上述(1)至(3)中之任一項記載之半導體裝置之製造方法,其中 (4) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein
使藉由上述切割進行個片化而成的半導體晶圓,以其表面側與晶片搭載用基板相向之方式,配置在晶片搭載用基板之上面,並且藉由回焊將其固定在上述晶片搭載用基板。 The semiconductor wafer, which is cut into pieces by the above-mentioned dicing, is arranged on the chip-mounting substrate so that its surface side faces the chip-mounting substrate, and is fixed to the above-mentioned chip-mounting substrate by reflow Use the substrate.
(5)如上述(1)至(3)中之任一項記載之半導體裝置之製造方法,其中 (5) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein
藉由回焊同時加熱上述熱硬化性樹脂層及上述第2保護膜形成層,而使該些層予以熱硬化。 The above-mentioned thermosetting resin layer and the above-mentioned second protective film forming layer are simultaneously heated by reflow, so that these layers are thermally hardened.
(6)如上述(1)至(3)中之任一項所記載之半導體裝置之製造方法,其中 (6) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein
上述第1支持片具備第1基材和被設置在上述第1基材之一方之表面上的第1黏著劑層,在上述第1黏著劑層之上面設置有上述熱硬化性樹脂層, The first support sheet includes a first substrate and a first adhesive layer provided on a surface of one of the first substrates, and the thermosetting resin layer is provided on the first adhesive layer,
上述熱硬化性樹脂層之熔融黏度在向上述半導體晶圓貼合上述第1保護膜形成用薄膜之時的溫度下,為1×102Pa.S以上2×104Pa.S未滿, The melt viscosity of the thermosetting resin layer was 1×10 2 Pa at the temperature when the first protective film formation film was bonded to the semiconductor wafer. 2×10 4 Pa above S. S is not full,
上述第1黏著劑層之剪切彈性率在向上述半導體晶圓貼合上述第1保護膜形成用薄膜之時的溫度下,為1×103Pa以上2×106Pa以下。 The shear modulus of the first adhesive layer is 1×10 3 Pa or more and 2×10 6 Pa or less at the temperature when the first protective film forming film is bonded to the semiconductor wafer.
(7)如上述(1)至(3)中之任一項所記載之半導體裝置之製造方法,其中 (7) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein
上述熱硬化性樹脂層具有凸塊高度之0.01~0.99倍的厚度。 The thermosetting resin layer has a thickness of 0.01 to 0.99 times the height of the bump.
本發明中,藉由被形成在半導體晶圓之凸塊面的保護膜,埋入凸塊頸,以防止凸塊頸之損壞。 In the present invention, the bump neck is buried by the protective film formed on the bump surface of the semiconductor wafer to prevent the bump neck from being damaged.
10:半導體晶圓 10: Semiconductor wafer
11:凸塊 11: bump
15:半導體晶片 15: Semiconductor wafer
20:第1保護膜形成用薄膜 20: Film for forming the first protective film
21:第1基材 21: The first substrate
22:第1黏著劑層 22: The first adhesive layer
23:第1支持片 23: The first support piece
25:熱硬化性樹脂層 25: Thermosetting resin layer
25A:保護膜 25A: Protective film
30:第2保護膜形成用薄膜 30: Film for forming the second protective film
31:第2基材 31: The second substrate
32:第2黏著劑層 32: The second adhesive layer
33:第2支持片 33: The second support piece
35:第2保護膜形成層 35: The second protective film forming layer
35A:第2保護膜 35A: 2nd protective film
40:晶片搭載用基板 40: Substrate for chip mounting
圖1為表示在表面形成有凸塊之半導體晶圓的示意性剖面圖。 FIG. 1 is a schematic cross-sectional view showing a semiconductor wafer with bumps formed on the surface.
圖2為表示第1保護膜形成用薄膜的示意性剖面圖。 Fig. 2 is a schematic cross-sectional view showing a first film for forming a protective film.
圖3為表示在半導體晶圓黏貼第1保護膜形成用薄膜之樣子的示意性剖面圖。 Fig. 3 is a schematic cross-sectional view showing how the first protective film forming film is stuck on the semiconductor wafer.
圖4為表示對在表面疊層有熱硬化性樹脂層之半導體晶圓進行加熱之工程的示意性剖面圖。 4 is a schematic cross-sectional view showing a process of heating a semiconductor wafer on which a thermosetting resin layer is laminated.
圖5為表示進行切割之時的半導體晶圓的示意性剖面圖。 FIG. 5 is a schematic cross-sectional view showing the semiconductor wafer at the time of dicing.
圖6為表示將進行個片化而成的半導體晶片載置在晶 片搭載用基板之時之樣子的示意性剖面圖。 Figure 6 is a diagram showing that the semiconductor wafers that have been individualized are placed on the wafer. A schematic cross-sectional view of the state of the substrate for chip mounting.
圖7為表示在表面形成保護膜,且在背面疊層第2保護膜形成層之半導體晶圓的示意性剖面圖。 FIG. 7 is a schematic cross-sectional view showing a semiconductor wafer in which a protective film is formed on the surface and a second protective film forming layer is laminated on the back surface.
圖8為表示對分別在表面及背面形成有保護膜及第2保護膜之半導體晶圓進行切割之工程的示意圖。 FIG. 8 is a schematic diagram showing a process of dicing a semiconductor wafer having a protective film and a second protective film formed on the front and back surfaces, respectively.
圖9為表示對分別在表面及背面形成有熱硬化性樹脂層及第2保護膜形成層之半導體晶圓進行加熱之工程的示意圖。 FIG. 9 is a schematic diagram showing a process of heating a semiconductor wafer having a thermosetting resin layer and a second protective film forming layer formed on the front and back surfaces, respectively.
圖10為表示第2保護膜形成用薄膜的示意性剖面圖。 Fig. 10 is a schematic cross-sectional view showing a second film for forming a protective film.
圖11為表示在表面形成保護膜,且在背面貼合第2保護膜形成用薄膜之半導體晶圓的示意性剖面圖。 11 is a schematic cross-sectional view showing a semiconductor wafer in which a protective film is formed on the surface and a second protective film forming thin film is bonded to the back surface.
圖12為表示對分別在表面及背面形成有熱硬化性樹脂層及第2保護膜形成用薄膜之半導體晶圓進行加熱之工程的示意圖。 FIG. 12 is a schematic diagram showing a process of heating a semiconductor wafer on which a thermosetting resin layer and a second protective film forming thin film are formed on the surface and the back surface, respectively.
以下,針對本發明使用實施型態進行具體性說明。 Hereinafter, a specific description will be given of the implementation mode of the present invention.
(第1實施型態) (First implementation type)
在本製造方法中所使用之半導體晶圓10係如圖1所示般,在表面10A設置有凸塊11的具有凸塊之晶圓。凸塊11通常設置有複數。半導體晶圓10並不特別限定,即
使為矽晶圓亦可,即使為陶瓷、玻璃、藍寶石系等之晶圓亦可。半導體晶圓10之厚度雖然不特別限定,但以0.625~0.825mm為佳。凸塊11之材料並不特別限定,使用各種金屬材料,以使用焊料為佳。再者,凸塊11之形狀並不特別限定,即使如圖1所示般為圓型亦可,即使為其他任何形狀亦可。再者,凸塊11之高度雖然不限定,但是通常為5~1000μm,以50~500μm為佳。
The
本發明之第1實施型態之半導體裝置之製造方法至少具有以下之工程。 The manufacturing method of the semiconductor device of the first embodiment of the present invention has at least the following processes.
(I)將依序設置有第1支持片和熱硬化性樹脂層的第1保護膜形成用薄膜,以將熱硬化性樹脂層作為貼合面之方式,貼合在半導體晶圓之設置有凸塊之表面的工程; (I) The first protective film forming film provided with the first support sheet and the thermosetting resin layer in this order is bonded to the semiconductor wafer with the thermosetting resin layer as the bonding surface. Engineering of the surface of the bump;
(II)從熱硬化性樹脂層剝離第1支持片的工程; (II) The process of peeling the first support sheet from the thermosetting resin layer;
(III)加熱熱硬化性樹脂層而使其硬化,形成保護膜的工程;及 (III) The process of heating the thermosetting resin layer to harden it to form a protective film; and
(IV)與保護膜同時切割半導體晶圓的工程。 (IV) The process of cutting semiconductor wafers at the same time as the protective film.
以下,針對本實施型態之製造方法對每工程進行詳細說明。 Hereinafter, each process will be described in detail with respect to the manufacturing method of this embodiment.
[工程(I)] [Engineering (I)]
在工程(I)中,首先如圖2所示般,準備具備有第1支持片23,和被設置在第1支持片23之上的熱硬化性樹脂層25的第1保護膜形成用薄膜20。而且,將第1保護膜形成用薄膜20,如圖3所示般,以將熱硬化性樹脂層25
作為貼合面之方式,貼合於半導體晶圓10之表面(凸塊面)10A。
In the process (I), first, as shown in FIG. 2, prepare a first protective film forming film including a
在此,在第1保護膜形成用薄膜20中,第1支持片23如圖2、3所示般,具備第1基材21,和被設置在第1基材21之一方之表面的第1黏著劑層22,同時雖然熱硬化性樹脂層25為被黏貼於第1黏著劑層22之上者亦可,但是即使為省略第1黏著劑層22,在基材21之一方之表面上直接黏貼熱硬化性樹脂層25者亦可。再者,即使第1基材21之一方之表面被進行表面處理,或是在第1支持片23設置有黏著劑層以外之層,隔著其層或表面處理面而被黏貼於熱硬化性樹脂層25亦可。而且,即使在第1黏著劑層22和第1基材21之間設置有中間層亦可。
Here, in the first protective
再者,即使在第1保護膜形成用薄膜20之熱硬化性樹脂層25之上,進一步黏貼有剝離材(無圖示)亦可。剝離材係保護熱硬化性樹脂層25直至使用第1保護膜形成用薄膜20之時為止。剝離材係第1保護膜形成用薄膜20被黏貼於半導體晶圓10之前從第1保護膜形成用薄膜20被剝離且被除去。
In addition, a release material (not shown) may be further pasted on the
第1黏著劑層22雖然係從各種之黏著劑被形成,但是即使藉由利用照射能量線進行硬化,且相對於被著體的接著力下降的能量線硬化型黏著劑而形成亦可。
Although the first
第1保護膜形成用薄膜20向半導體晶圓10的貼合,係以在貼合溫度30~150℃下被進行為佳,且在40~100℃下被進行為更佳。
The bonding of the first protective film forming
再者,第1保護膜形成用薄膜20之黏貼係以一面進行加壓一面進行為佳,例如以一面藉由壓接輥等之推壓手段施予推壓一面進行為佳。或是,即使藉由真空層壓機,將第1保護膜形成用薄膜20壓接於半導體晶圓10亦可。
Furthermore, the first protective
半導體晶圓10係當第1保護膜形成用薄膜20被黏貼時,如圖3所示般,凸塊11穿通熱硬化性樹脂層25而突出至第1支持片23側。如此一來,利用使凸塊11突出至第1支持片23側,藉由後述回焊,使凸塊11接觸於晶片搭載用基板上之電極等而進行固定成為容易。
When the first protective
但是,凸塊11係不突出至第1支持片23側,即使成為被埋入至熱硬化性樹脂層25之內部的狀態亦可。即使為如此之狀態,在工程(III)等,藉由加熱使熱硬化性樹脂層25流動而使凸塊11突出即可。
However, the
第1支持片23具備第1基材21,和被設置在第1基材21之一方之表面的第1黏著劑層22,在第1黏著劑層22之上面設置有熱硬化性樹脂層25之情況下,熱硬化性樹脂層25之熔融黏度在向半導體晶圓10貼合第1保護膜形成用薄膜20之時的溫度(貼合溫度)下,為1×102Pa.S以上2×104Pa.S未滿,同時第1黏著劑層22之剪切彈性率在貼合溫度下,為1×103Pa以上2×106Pa以下為佳。再者,以熱硬化性樹脂層25之上述熔融黏度為1×103Pa.S以上1×104Pa.S未滿,第1黏著劑層22之上述剪切彈性率為1×104Pa以上5×105Pa以下為更佳。
The
在貼合溫度下,藉由將第1黏著劑層22之剪切彈性
率,和熱硬化性樹脂層25之熔融黏度設為上述範圍內,藉由熱硬化性樹脂層25埋入作為凸塊11之根部部分的凸塊頸,並且容易使凸塊11之前端從熱硬化性樹脂層25突出。
At the bonding temperature, the shear elasticity of the first
熱硬化性樹脂層25之熔融黏度例如能夠藉由變更後述的熱硬化性樹脂組成物中之各材料的摻合量或各材料之種類而做調整。另外,第1黏著劑層22之剪切彈性率能夠藉由變更黏著劑之種類而做調整。而且,第1黏著劑層22係在以能量線硬化型黏著劑形成之情況下,藉由將第1支持片23黏貼於半導體晶圓10之前,照射能量線,使其部分性地或完全硬化,能夠調整剪切彈性率。
The melt viscosity of the
另外,熱硬化性樹脂層之熔融黏度係使用流變儀(HAAKE公司製,RS-1),藉由平行板法測量出的值。更詳細而言,在間隙100μm、旋轉圓錐直徑20mm、旋轉速度10s-1之條件下,在室溫至250℃之範圍下進行測量之時的值。 In addition, the melt viscosity of the thermosetting resin layer is a value measured by a parallel plate method using a rheometer (manufactured by HAAKE Corporation, RS-1). More specifically, it is the value when the measurement is performed in the range of room temperature to 250°C under the conditions of a gap of 100 μm, a rotating cone diameter of 20 mm, and a rotation speed of 10 s -1.
再者,黏著劑層之剪切彈性率係形成厚度0.2mm之黏著劑層,且使用剪切彈性率測量裝置(Rheometric公司製造,ARES)而測量出者。具體而言,將溫度設為與貼合溫度相同的溫度,在頻率1Hz、板徑7.9mmΦ及歪斜1%之條件下測量剪切彈性率者。再者,於貼合時,在黏著劑層藉由能量線被硬化之情況下,在相同之條件下使黏著劑層硬化而測量剪切彈性率。 Furthermore, the shear elastic modulus of the adhesive layer was measured by forming an adhesive layer with a thickness of 0.2 mm using a shear modulus measuring device (manufactured by Rheometric Corporation, ARES). Specifically, the temperature was set to the same temperature as the bonding temperature, and the shear modulus was measured under the conditions of a frequency of 1 Hz, a plate diameter of 7.9 mmΦ, and a skew of 1%. Furthermore, during bonding, when the adhesive layer is hardened by energy rays, the adhesive layer is hardened under the same conditions to measure the shear elastic modulus.
熱硬化性樹脂層25以具有凸塊11之高度(凸
塊高度)之0.01倍~0.99倍之厚度為佳。藉由將熱硬化性樹脂層25之厚度設為凸塊高度之0.01倍以上,將凸塊頸埋入保護膜內部,成為容易防止凸塊頸之破損。再者,藉由設為0.99倍以下,成為容易使凸塊之前端從熱硬化性樹脂層25突出。從該些觀點可知,熱硬化性樹脂層25以具有凸塊高度之0.1倍~0.9倍之厚度為更佳。
The
另外,熱硬化性樹脂層25之厚度雖然不限定,但是通常為5~500μm,以10~100μm為佳。
In addition, although the thickness of the
[工程(II)] [Engineering (II)]
在工程(II)中,於上述工程(I)之後,從熱硬化性樹脂層25剝離被黏貼在半導體晶圓10之表面的第1支持片23。該剝離後,熱硬化性樹脂層25如圖4所示般,成為殘留在半導體晶圓10上的原樣。
In the process (II), after the above-mentioned process (I), the
於第1黏著劑層22藉由能量線硬化型黏著劑被形成之情況下,在工程(II)中從半導體晶圓10剝離第1支持片23之前,對第1黏著劑層22照射能量線先使第1黏著劑層22硬化。第1黏著劑層22藉由能量線照射而進行硬化,由於接著力下降,故成為可以在與熱硬化性樹脂層25之界面容易剝離。
In the case where the first
對第1黏著劑層22照射能量線而使其硬化之時序並不特別限定,即使於將第1支持片23黏貼於半導體晶圓10之前事先使其硬化亦可。再者,即使於黏貼在半導體晶圓10之後亦可。再者,第1黏著劑層22即使例如將第
1支持片23黏貼於半導體晶圓10之前,以不完全硬化之程度照射能量線而使接著力下降,同時在黏貼於半導體晶圓10之後,進一步照射能量線使更進一步硬化,而使接著力更加下降亦可。
The timing of irradiating the first
[工程(III)] [Engineering (III)]
在工程(II)剝離的1支持片23之後,對被疊層在半導體晶圓10之表面的熱硬化性樹脂層25進行加熱。該加熱以如圖4所示般,藉由將被疊層熱硬化性樹脂層25之半導體晶圓10,配置在例如加熱爐等內部而進行加熱來進行為佳。由於熱硬化性樹脂層25含有熱硬化性樹脂,故藉由上述加熱被熱硬化,成為保護膜25A(參照圖5)。
After the 1
上述加熱條件若熱硬化性樹脂層25所含有的熱硬化性樹脂被硬化時則不特別限定,例如在80~200℃,30~300分鐘期間,最佳為100~180℃,60~200分鐘期間進行。
The above heating conditions are not particularly limited if the thermosetting resin contained in the
[工程(IV)] [Engineering (IV)]
接著,將在凸塊面形成有保護膜25A之半導體晶圓10如圖5所示般,藉由切割進行分割,而個片化成複數的半導體晶片15。在該工程中,保護膜25A與半導體晶圓10同時配合半導體晶片15之形狀而被分割。
Next, the
作為切割方法,並不特別限定,可以使用刀刃切割、隱形雷射切割、雷射切割等之眾知的方法,例如藉由以貫
通保護膜25A及半導體晶圓10之方式,設置切溝17而進行者。
The cutting method is not particularly limited, and well-known methods such as blade cutting, invisible laser cutting, and laser cutting can be used.
To pass the
切割係例如圖5所示般,藉由在半導體晶圓10之背面10B側黏貼第2支持片33而支持半導體晶圓10,同時從半導體晶圓10之表面10A側設置切溝17而進行。
The dicing is performed, for example, as shown in FIG. 5, by attaching a
第2支持片33在圖5之構成中,具備第2基材31,和被設置在第2基材31之一方之表面上的第2黏著劑層32,隔著第2黏著劑層32而被黏貼在半導體晶圓10。但是,第2支持片33即使省略第2黏著劑層32亦可,被接著於第2基材31之半導體晶圓10之側的表面被進行表面處理,或是設置黏著劑層以外之層以取代黏著劑層,隔著其層或表面處理面而貼合於半導體晶圓10之背面側亦可。再者,即使在第2黏著劑層32和第2基材31之間進一步設置有中間層(無圖示)亦可。
In the configuration of FIG. 5, the
第2支持片33係以較半導體晶圓10大一圈,並且其中央區域被黏貼在半導體晶圓10,同時外周區域不黏貼在半導體晶圓10,而被黏貼在支持構件13為佳。支持構件13可舉出在切割時等,用以支持第2支持構件33之構件,例如環框架。
The second supporting
另外,第2支持片33向支持構件13的黏貼即使無須直接黏貼第2黏著劑層32,在第2支持片33之外周區域設置再剝離接著劑層等,而藉由其再剝離接著劑層等進行黏貼亦可。
In addition, even if the
第2黏著劑層32雖然從各種黏著劑形成,但
是即使藉由能量線硬化型黏著劑形成亦可。於藉由能量線硬化型黏著劑形成之情況下,於後述的拾取之前,至少對貼合於第2黏著劑層32之半導體晶圓10之背面側的區域(中央區域),事先照射能量線,而使第2黏著劑層32硬化而降低相對於半導體晶圓10之背面的接著力。照射能量線之時序並不特別限定,即使在貼合於半導體晶圓10之前進行亦可,即使於切割後,拾取之前進行亦可。
Although the second
另外,即使外周區域不進行能量線照射亦可,即使以朝向支持構件13的接著為目的,先將接著力維持在高的狀態亦可。
In addition, even if the outer peripheral region is not irradiated with energy rays, even if the purpose is to adhere to the
在本實施型態中,於切割之後,拾取半導體晶片15,而藉由回焊安裝於晶片搭載用基板等之後,進一步經過藉由密封樹脂密封半導體晶片15和晶片搭載基板之間的間隙等之所需工程,製造半導體裝置。
In this embodiment, after dicing, the
在此,拾取之方法並不特別限定,例如有經由第2支持片33而藉由插銷等從背面側上推半導體晶片15,而從第2支持片33剝離半導體晶片15而藉由真空收集器等進行拾取之方法。
Here, the method of picking is not particularly limited. For example, the
拾取的半導體晶片15例如以以下之方法安裝於晶片搭載用基板等。
The picked-up
即是,如圖6所示般,半導體晶片15係以其表面(即是,凸塊面)與晶片搭載用基板40相向之方式,被配置在晶片搭載用基板40之特定位置。而且,藉由回焊,凸塊11被固定在晶片搭載用基板40,半導體晶片15和晶片搭
載用基板40被電性導通。另外,在回焊中,例如使被設置在基板40上之焊料等之導電材(無圖示)熔融,藉由其導電材,使凸塊11熔接於晶片搭載用基板40之電極等。
That is, as shown in FIG. 6, the
回焊係例如藉由將晶片搭載用基板40,和被配置在其基板40上之半導體晶片15配置在加熱爐之內部而進行加熱而進行。在回焊中之加熱係在例如120~300℃之氛圍下,且0.5~5分鐘,最佳為160~260℃之氛圍下,1~2分鐘下進行者。
The reflow is performed, for example, by arranging the
在本實施型態之製造方法中,半導體晶圓10係以進行背面研削為佳。背面研削係在將第1支持片23黏貼於半導體晶圓10之表面10A側之狀態下進行。即是,半導體晶圓之背面研削係在工程(I)和工程(II)之間進行。依此,第1支持片23不僅係用以支持熱硬化性樹脂層25之薄片,也可當作於背面研削時保護凸塊面之背面研削片使用。
In the manufacturing method of this embodiment, the
半導體晶圓之背面研削係藉由例如將黏貼有第1支持片23之半導體晶圓10的表面側,固定在夾具平台等之固定平台上,藉由研磨機等對背面10B進行研削而進行。晶圓10之研削後之厚度並不特別限定,通常為5~450μm,以20~400μm程度為佳。
The back surface grinding of the semiconductor wafer is performed by, for example, fixing the surface side of the
接著,針對在本製造方法中所使用之各構件之材料進行詳細說明。 Next, the material of each member used in this manufacturing method will be described in detail.
(熱硬化性樹脂層) (Thermosetting resin layer)
熱硬化性樹脂層25係至少包含熱硬化性樹脂,同時能夠接著於晶圓10,藉由在後述之加熱硬化工程中被加熱,成為保護膜25A。
The
作為熱硬化性樹脂層25所使用之熱硬化性樹脂,可舉出環氧樹脂、苯酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚氨酯樹脂、矽氧樹脂、熱硬化聚醯亞胺樹脂等。熱硬化性樹脂可以單獨或合併使用2種以上。作為熱硬化性樹脂,尤其以使半導體元件腐蝕之含離子性雜質等少的環氧樹脂為佳。再者,作為熱硬化性樹脂,也可以含有硬化劑,例如作為環氧樹脂之硬化劑,可以適合使用酚樹脂。
Examples of the thermosetting resin used in the
另外,在熱硬化性樹脂層25中,熱硬化性樹脂相對於熱硬化性樹脂層(即是,熱硬化性樹脂組成物)全量,較佳為5~70質量%,更佳為10~50質量%。
In addition, in the
再者,熱硬化性樹脂層25除熱硬化性樹脂以外以由含有熱可塑性樹脂及填充材之熱硬化性樹脂組成物構成為佳。
In addition, the
作為熱可塑性樹脂,雖然可以使用丙烯酸系樹脂、聚脂樹脂、聚氨酯樹脂、丙烯酸聚氨酯樹脂、矽氧樹脂、橡膠系聚合物、苯氧基樹脂等,但是該些中,以丙烯酸樹脂為佳。 As the thermoplastic resin, acrylic resins, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers, phenoxy resins, etc. can be used, but among these, acrylic resins are preferred.
在熱硬化性樹脂層中之熱硬化性樹脂相對於熱硬化性樹脂層(即是,熱硬化性樹脂組成物)全量,較佳為1~50質量%,更佳為5~40質量%。 The thermosetting resin in the thermosetting resin layer is preferably 1-50% by mass, more preferably 5-40% by mass relative to the total amount of the thermosetting resin layer (that is, the thermosetting resin composition).
再者,作為填充材,可舉出從二氧化矽、氧 化鋁、滑石、碳酸鈣、氧化鈦、氧化鐵、碳化矽、氮化硼等之粉末,使該些成為球形化之圓珠、單結晶纖維及玻璃纖維等選擇出的無機填充物,在該些之中,以二氧化矽填充物或氧化鋁填充物為佳。 Furthermore, as fillers, silicon dioxide, oxygen Powders such as aluminum, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride, etc., made into spherical beads, single crystal fibers, glass fibers, and other selected inorganic fillers. Among these, silica filler or alumina filler is preferred.
在熱硬化性樹脂層中之填充材相對於熱硬化性樹脂層(即是,熱硬化性樹脂組成物)全量,較佳為5~75質量%,更佳為10~60質量%。 The filler in the thermosetting resin layer is preferably 5 to 75% by mass, more preferably 10 to 60% by mass relative to the total amount of the thermosetting resin layer (that is, the thermosetting resin composition).
再者,熱硬化性樹脂組成物分別除了上述成分之外,即使含有硬化促進劑、耦合劑、顏料、染料等之著色劑之其他的添加劑亦可。 In addition, the thermosetting resin composition may contain other additives such as a coloring agent such as a curing accelerator, a coupling agent, a pigment, and a dye in addition to the above-mentioned components.
作為硬化促進劑並不特別限制,例如可以使用從胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等選擇出之至少一種。 再者,作為耦合劑,能夠使用矽烷耦合劑。 The hardening accelerator is not particularly limited. For example, at least one selected from amine hardening accelerators, phosphorus hardening accelerators, imidazole hardening accelerators, boron hardening accelerators, phosphorus-boron hardening accelerators, etc. can be used . Furthermore, as the coupling agent, a silane coupling agent can be used.
(第1及第2基材) (1st and 2nd base material)
雖然第1基材21不特別限定,但以使用樹脂薄膜為佳。再者,雖然第2基材31也不特別限定,但以使用樹脂薄膜為佳。樹脂薄膜即使為由一種樹脂薄膜所構成之單層薄膜亦可,即使為疊層複數樹脂薄膜之複層薄膜亦可。
Although the
作為具體的樹脂薄膜,可舉出聚乙烯薄膜、聚丙烯薄膜、聚丁稀薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、乙烯-冰片稀共聚物薄膜、冰片稀樹脂薄膜等之聚烯烴系薄膜;乙烯-醋酸乙烯共聚物薄膜、乙烯-(甲基)丙烯酸共聚 物薄膜、乙烯-(甲基)丙烯酸酯共聚物薄膜等之乙烯系共聚物系薄膜;聚氯乙烯薄膜、氯乙烯共聚物薄膜等之聚氯乙烯系薄膜;聚對苯二甲酸乙酯薄膜、聚對苯二甲酸丁二酯薄膜等之聚酯系薄膜;聚胺基甲酸酯系薄膜、聚醯亞胺系薄膜、聚醯胺系薄膜、聚縮醛膜系薄膜、聚碳酸酯系薄膜、聚苯乙烯系薄膜、氟樹脂薄膜、改質聚氧化二甲苯系薄膜、聚苯硫醚系薄膜、聚碸系薄膜等。再者,也使用該些交聯薄膜、離子聚合物般之改質薄膜。 Specific resin films include polyethylene films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, ethylene-bornene copolymer films, and borneol resin films. Olefin film; ethylene-vinyl acetate copolymer film, ethylene-(meth)acrylic acid copolymer Vinyl copolymer-based films such as plastic films, ethylene-(meth)acrylate copolymer films, etc.; polyvinyl chloride films, such as polyvinyl chloride films, vinyl chloride copolymer films, etc.; polyethylene terephthalate films, Polyester film such as polybutylene terephthalate film; polyurethane film, polyimide film, polyamide film, polyacetal film, polycarbonate film , Polystyrene film, fluororesin film, modified polyxylene oxide film, polyphenylene sulfide film, polysulfide film, etc. Furthermore, these cross-linked films and modified films like ionomers are also used.
第1及第2基材21、31即使互相同種者亦可,即使使用不同種類者亦可。再者,第1及第2基材21、31係在分別構成第1及第2黏著材層22、23之黏著劑為能量線型硬化性黏著劑之情況下,以穿透能量線者為佳。
The first and
第1及第2基材21、31之厚度分別為例如10~1000μm,較佳為50~200μm。
The thicknesses of the first and
(第1及第2黏著劑層) (1st and 2nd adhesive layer)
雖然分別形成第1及第2黏著劑層22、32之黏著劑並不特別限定,但是可以舉出丙烯酸系黏著劑、橡膠系黏著劑、矽氧系黏著劑、聚酯系黏著劑、氨基甲酸酯系黏著劑、聚烯烴系黏著劑、乙烯烷基醚系黏合劑、聚醯胺系黏著劑、氟系黏著劑、乙烯-二烯共聚物系黏著劑等,其中以丙烯酸系黏著劑為佳。例如,當第1黏著劑層22使用丙烯酸系黏著劑時,容易將黏著劑層之剪切彈性率設為上述範圍。
Although the adhesives that form the first and second
黏著劑通常除了丙烯酸系樹脂、橡膠成分、矽氧系樹脂、聚酯系樹脂、氨基甲酸酯系樹脂、聚烯烴系樹脂、乙烯烷基醚系樹脂、聚醯胺系樹脂、氟系樹脂、乙烯-二烯共聚物等之黏著性成分(主要為聚合物)之外,有因應所需由交聯劑、具有黏著劑賦予劑、氧化防止劑、可塑劑、填充劑、帶電防止劑、光聚合起始劑、難燃劑等之成分的黏著劑組成物所構成者。另外,黏著性成分係也廣泛包含聚合物本身實質上雖然不具有黏著性,但藉由可塑化成分之添加等來表現黏著性之聚合物等的概念。 Adhesives are usually in addition to acrylic resins, rubber components, silicone resins, polyester resins, urethane resins, polyolefin resins, vinyl alkyl ether resins, polyamide resins, fluorine resins, etc. In addition to adhesive components (mainly polymers) such as ethylene-diene copolymers, there are crosslinking agents, adhesive-imparting agents, oxidation inhibitors, plasticizers, fillers, antistatic agents, and light It is composed of an adhesive composition of components such as polymerization initiators and flame retardants. In addition, the adhesive component system also broadly includes the concept of polymers that express adhesiveness through the addition of plasticizing components, etc., although the polymer itself does not have adhesiveness substantially.
第1及第2黏著劑層22、32係如上述般,即使從能量線型硬化性黏著劑形成亦可,即使由就算照射能量線黏著劑也不會硬化之非能量線硬化型黏著劑所形成亦可。另外,能量線係電磁波或帶電粒子線中具有能量量子者,係指紫外線等之活性光或電子線等,但在本製造方法中,以使用紫外線為佳。另外,即使該些第1及第2黏著劑層22、32中之僅任一方由能量線型硬化性黏著劑形成亦可,即使雙方由能量線型硬化性黏著劑形成亦可。
The first and second
能量線硬化型黏著劑具體而言係由含有具有光聚合性不飽合基之成分的能量線硬化型黏著劑所構成者。作為能量線硬化型黏著劑,雖然不特別限定,但是可舉出在黏著劑之主聚合物(例如,丙烯酸系聚合物)本身(例如,主聚合物之側鏈)被導入雙鍵結等之光聚合性不飽合基者。 The energy-ray-curable adhesive is specifically composed of an energy-ray-curable adhesive containing a component having a photopolymerizable unsaturated group. Although it is not particularly limited as an energy-ray curable adhesive, it can be mentioned that the main polymer (for example, acrylic polymer) itself (for example, the side chain of the main polymer) of the adhesive is introduced into a double bond, etc. Photopolymerizable unsaturated base.
再者,作為能量線硬化型黏著劑,即使為與主聚合物(例如,丙酸酸系聚合物)不同,摻合具有光聚合性不飽合 基之能量線聚合性化合物者亦可。在此情況下,主聚合物即使為導入光聚合性不飽合基者亦可,即使為不導入亦可。 Furthermore, as an energy-ray-curable adhesive, even if it is different from the main polymer (for example, a propionic acid-based polymer), the blending has photopolymerization and unsaturation. Energy ray polymerizable compound based on the base can also be used. In this case, the main polymer may be one that introduces a photopolymerizable unsaturated group, or it may not be introduced.
雖然第1黏著劑層22之厚度因應凸塊高度而被適當調整,但是較佳為5~500μm,更佳為10~100μm。再者,第2黏著劑層32之厚度較佳為5~500μm,更佳為10~100μm。另外,第1及第2黏著劑層22、32即使由相同材料形成亦可,即使由不同材料形成亦可。
Although the thickness of the first
(中間層) (middle layer)
在第1及第2支持片23、33中所使用之中間層以使包含胺基甲酸酯(甲基)丙烯酸酯之硬化性材料硬化而構成者為佳。藉由硬化性材料包含胺基甲酸酯(甲基)丙烯酸酯,能夠緩和作用於第1及第2支持片23、33之應力。因此,在各工程中,能夠吸收在第1及第2支持片23、33產生的振動等。
The intermediate layer used in the first and
上述硬化性材料除胺基甲酸酯(甲基)丙烯酸酯以外,即使含有丙烯酸系單體等之單體成分亦可。作為丙烯酸系單體,理想上以異冰片(甲基)丙烯酸酯、二環戊烯基(甲基)丙烯酸等之脂環族化合物為佳。另外,上述硬化性材料以被能量線硬化為佳。另外,硬化性材料在被能量線硬化之情況下,以含有光聚合起始劑為佳。 In addition to the urethane (meth)acrylate, the above-mentioned curable material may contain monomer components such as acrylic monomers. As the acrylic monomer, alicyclic compounds such as isobornyl (meth)acrylate and dicyclopentenyl (meth)acrylic acid are preferably preferred. In addition, the above-mentioned curable material is preferably hardened by energy rays. In addition, when the curable material is cured by energy rays, it is preferable to contain a photopolymerization initiator.
在第1及第2支持片23、33中之任一者具有中間層之情況下,即使該些所使用之材料為相同亦可,即使為不
同亦可。中間層之厚度例如5~1000μm,較佳為10~500μm。
In the case where any one of the first and
若藉由上述說明的第1實施型態之製造方法時,熱硬化性樹脂層25係以覆蓋凸塊頸之方式,被疊層在半導體晶圓10之表面10A上,且在其被疊層之狀態下被硬化,成為保護膜25A。因此,能夠藉由保護膜25A適當保護凸塊徑。
According to the manufacturing method of the first embodiment described above, the
而且,當第1支持片23被加熱時,第1支持片23對熱硬化性樹脂層25的接著力變重,有產生無法使第1支持片23從熱硬化性樹脂層25(保護膜25A)剝離之剝離不良的情形。在本實施型態中,於熱硬化(工程(III)之前,藉由從熱硬化性樹脂層25剝離支持片23(工程(II)),防止如此的剝離不良。
Moreover, when the
[第2實施型態] [Second Implementation Type]
接著,針對本發明之第2實施型態予以說明。另外,在以下之各實施型態之說明中,省略與第1實施型態相同之工程及構件之說明。 Next, the second embodiment of the present invention will be described. In addition, in the description of the following embodiments, descriptions of the same processes and components as those of the first embodiment are omitted.
在第1實施型態中,雖然於工程(III)之後,進行切割(工程(IV)),但是在第2實施型態中,係在切割(工程(IV))之後進行工程(III)。即是,在第2實施型態中,依序實施工程(I)、(II)、(IV)及(III)。以下,針對第2實施型態,說明與第1實施型態不同點。 In the first embodiment, although the process (III) is followed by cutting (process (IV)), in the second embodiment, the process (III) is performed after the process (IV). That is, in the second implementation type, the steps (I), (II), (IV), and (III) are sequentially implemented. Hereinafter, regarding the second embodiment, the differences from the first embodiment will be described.
在本實施型態中,首先,與第1實施型態相
同,在工程(I)、(II)中,將第1保護膜形成用薄膜20貼合於半導體晶圓10之表面10A,之後,從熱硬化性樹脂層25剝離第1支持片23。
In this embodiment, first of all, it is similar to the first embodiment.
Similarly, in the steps (I) and (II), the first protective
接著,藉由切割(工程(IV))將半導體晶圓10個片化成半導體晶片15,之後,加熱熱硬化性樹脂層25而使其硬化(工程(III))。因此,在本實施型態之工程(IV)中,將半導體晶圓10與熱硬化前之熱硬化性樹脂層25,同時進行切割而使成為個片化。
Next, 10 semiconductor wafers are sliced into
雖然熱硬化性樹脂層25之硬化用的加熱條件與第1實施型態相同即可,但是熱硬化性樹脂層25之硬化係在拾取之後進行為佳,尤其以藉由回焊時之加熱進行硬化為佳。
Although the heating conditions for the curing of the
當於拾取後,進行熱硬化性樹脂層25之硬化時,於加熱時,半導體晶片15(半導體晶圓10)已從第1及第2支持片23、33(尤其,第2支持片33)剝離。因此,藉由工程(IV)之加熱,支持片23、33之接著力變重也不會有產生剝離不良之情形。而且,當藉由回焊時之加熱,使熱硬化性樹脂層25硬化時,由於無須另外設置用以硬化熱硬化性樹脂層25之加熱工程,故可以簡化工程。
When the
[第3實施型態] [The third implementation type]
以下,針對本發明之第3實施型態,說明與第1實施型態不同點。 Hereinafter, regarding the third embodiment of the present invention, the differences from the first embodiment will be described.
第3實施型態之製造工程除了在上述第1實施型態中 說明的工程(I)~(IV)外,還具有工程(A-1)、(A-2)及(A-3)。 The manufacturing process of the third implementation type is in addition to the above-mentioned first implementation type In addition to the described projects (I) to (IV), there are also projects (A-1), (A-2) and (A-3).
(A-1)在半導體晶圓之背面貼合第2保護膜形成層的工程 (A-1) The process of laminating the second protective film forming layer on the back of the semiconductor wafer
(A-2)加熱第2保護膜形成層,而形成第2保護膜的工程 (A-2) The process of heating the second protective film forming layer to form the second protective film
(A-3)在被形成於半導體晶圓之背面上的第2保護膜之上面進一步貼合第2支持片的工程 (A-3) The process of further laminating a second support sheet on top of the second protective film formed on the back surface of the semiconductor wafer
[工程(A-1)] [Engineering (A-1)]
在本實施型態中,與第1實施型態相同,於實施工程(I)、(II)及(III)之後(即是,在半導體晶圓10之表面10A形成保護膜25A之後),在半導體晶圓之背面10B(與凸塊面相反側之面),如圖7所示般,貼合第2保護膜形成層35。第2保護膜形成層35至少包含熱硬化性樹脂,如後述般,藉由被加熱而成為第2保護膜35A(參照圖8)。
In this embodiment, similar to the first embodiment, after the steps (I), (II), and (III) are implemented (that is, after the
在本工程中,若將由第2保護膜形成層35所構成之薄膜狀者,黏貼於半導體晶圓10之背面10B即可,但是即使例如將被設置在支持基材(無圖示)之一方之表面上的第2保護膜形成層35黏貼在半導體晶圓10之背面10B亦可。另外,支持基材係於將第2保護膜形成層35黏貼於半導體晶圓10之背面之後,從第2保護膜形成層35被剝離除去。另外,作為支持基材,能夠使用與第1及第2基材21、31相同之樹脂薄膜。
In this process, it is sufficient if the thin film formed by the second protective
第2保護膜形成層35與熱硬化性樹脂層25相同,除熱硬化性樹脂以外以由含有熱可塑性樹脂及填充材之熱硬化性樹脂組成物構成為佳。再者,即使熱硬化性樹脂組成物進一步含有硬化促進劑、耦合劑、顏料、染料等之著色劑之其他的添加劑亦可。另外,第2保護膜形成層35所使用之各材料及摻合量等之詳細由於與在第1實施型態中說明的熱硬化性樹脂層25相同,故省略其說明。第2保護膜形成層35即使由與熱硬化性樹脂層25相同之材料形成亦可,即使由不同的材料形成亦可。
The second protective
再者,第2保護膜形成層35之厚度例如為5~500μm,較佳為10~100μm。
Furthermore, the thickness of the second protective
[工程(A-2)] [Engineering (A-2)]
於工程(A-1)之後,加熱第2保護膜形成層35而使其硬化,形成第2保護膜35A(工程(A-2))。第2保護膜形成層35之加熱,係例如藉由將在表面10A側形成保護膜25A,並且在背面10B側疊層有第2保護膜形成層35之半導體晶圓10,配置在加熱爐等內部,而進行加熱為佳。另外,本工程(A-2)中之加熱條件由於係與在工程(III)中說明的加熱條件同樣的條件,故省略其說明。
After the process (A-1), the second protective
[工程(A-3)] [Engineering (A-3)]
於工程(A-2)之後,如圖8所示般,在半導體晶圓10之背面側,即是第2保護膜35A上,貼合第2支持片
33。另外,第2支持片33之構成與第1實施型態相同。即是,雖然在圖8中,第2支持片33係隔著第2黏著劑層32而被黏貼於第2保護膜35A之態樣,但是即使省略第2黏著劑層而將第2基材31直接接著於第2保護膜35A亦可,即使在第2基材31進行表面處理,或是設置黏著劑層以外之層,隔著其層或表面處理面而被黏貼於第2保護膜35A亦可。再者,即使在第2黏著劑層32和第2基材31之間進一步設置有中間層亦可。
After the process (A-2), as shown in FIG. 8, on the back side of the
[工程(IV)] [Engineering (IV)]
接著,形成有保護膜25A及第2保護膜35A之半導體晶圓10如圖8所示般,進行切割而個片化成複數的半導體晶片15。在本實施型態之工程(IV)中,保護膜25A及第2保護膜35A也與半導體晶圓10同時被切割,配合半導體晶片15之形狀而被分割。由於切割工程之詳細與第1實施型態相同,故省略其說明。
Next, as shown in FIG. 8, the
於切割工程之後,與第1實施型態相同,於拾取半導體晶片15,而藉由回焊安裝於晶片搭載用基板等之後,經由例如藉由密封樹脂密封半導體晶片15和晶片搭載基板40之間的間隙等之所需工程,製造半導體裝置。
After the dicing process, as in the first embodiment, the
即使在以上之第3實施型態中,也與第1實施型態相同,藉由保護膜25A適當保護凸塊頸。再者,藉由第2保護膜35A,也能夠保護半導體晶片15之背面。
Even in the above third embodiment, it is the same as the first embodiment, and the bump neck is appropriately protected by the
另外,在以上之第3實施型態中,即使對被形成在晶圓之背面上的第2保護膜35A或第2保護膜形成層35,進行雷射印字亦可。藉由進行雷射印字,能夠在半導體晶片15之背面側,顯示各種標記、文字等。在本實施型態中,在工程(A-2)和工程(A-3)之間,被硬化的第2保護膜35A露出。因此,以對露出於工程(A-2)和工程(A-3)之間的第2保護膜35A,進行雷射印字為佳。藉由對被硬化之第2保護膜35A進行印字,比起在硬化前之第2保護膜形成層35進行印字之情況,印字性較良好。再者,由於半導體晶圓10被個片化之前被印字,故能夠對複數的半導體晶片進行整批印字。而且,藉由對露出之第2保護膜35A進行雷射印字,能夠有效率地進行印字。但是,即使藉由隔著第2支持片33對不露出(即是,藉由第2支持片33被覆蓋)之第2保護膜35A或第2保護膜形成層35,照射雷射,而進行雷射印字亦可。
In addition, in the third embodiment described above, it is possible to perform laser printing on the second
在上述第3實施型態中,雖然表示依序進行工程(A-1)、(A-2)及(A-3)的態樣,但是即使取代此,依序進行工程(A-1)、(A-3)及(A-2)亦可。 In the above-mentioned third embodiment, although it shows that the works (A-1), (A-2) and (A-3) are carried out in order, even if this is replaced, the works are carried out in order (A-1) , (A-3) and (A-2) are also acceptable.
具體而言,首先,與上述相同,實施工程(I)、(II)及(III)而在表面10A形成保護膜25A,之後,將第2保護膜形成層35貼合在半導體晶圓10之背面10B(工程(A-1))。接著,在被疊層於背面10B上之硬化前的第2保護膜形成層35之上,進一步貼合第2支持片33(工程(A-3))。
Specifically, first, as described above, the steps (I), (II), and (III) are performed to form the
而且,藉由加熱硬化第2保護膜形成層35,而形成
第2保護膜35A(工程(A-2)),之後,藉由切割將被支持於第2支持片33之半導體晶圓10予以個片化(工程(IV)),製造半導體裝置。
Furthermore, the second protective
另外,在依序進行(A-1)、(A-3)及(A-2)之情況下,第2保護膜35A藉由硬化被形成之後,被第2支持片33覆蓋直至切割結束為止不會露出。因此,對被硬化之第2保護膜35A進行的雷射印字,通常隔著第2支持片33照射雷射而進行。
In addition, when (A-1), (A-3), and (A-2) are sequentially performed, after the second
而且,當依序進行(A-1)、(A-3)及(A-2)時,第2支持片33在工程(A-2)係在被黏貼於第2保護膜形成層35之狀態下被進行加熱。因此,第2支持片33以具有耐熱性為佳。即是,作為第2支持片33之第2基材31,以藉由工程(A-2)之加熱,不會熔融,或顯著收縮之基材為佳。
Furthermore, when (A-1), (A-3) and (A-2) are performed in this order, the
再者,具有耐熱性之第2支持片33係藉由工程(A-2)之加熱,相對於被著體之接著性不會變高者。具體而言,具有耐熱性之第2支持片33係以工程(A-2)之加熱後之接著力成為10N/25mm未滿者為佳。再者,該接著力以0.3~9.8N/25mm為較佳,以0.5~9.5N/25mm為更佳。
Furthermore, the
第2支持片33藉由如此般地加熱後之接著力比較低,難以產生於從第2支持片33拾取半導體晶片15之時,半導體晶片15無法拾取的剝離不良。
The
另外,上述加熱後之接著力係指在以能量線硬化型黏著劑形成黏著劑層之情況下,以與被實施的製造 方法相同的時序,對黏著劑照射能量線而使其硬化,且加熱黏著劑層之時的接著力。即是,在被實施的製造方法中,於工程(A-2)之加熱後,在照射能量線之情況下,於加熱後,對黏著劑層照射能量線而測量接著力之時的值。另外,在被實施的製造方法中,於工程(A-2)之加熱前,在照射能量線之情況下,於加熱前,對黏著劑層照射能量線而測量接著力之時的值。 In addition, the above-mentioned adhesive force after heating means that when the adhesive layer is formed with an energy ray-curable adhesive, it is consistent with the manufacturing In the same time sequence as the method, the adhesive is irradiated with energy rays to harden it and the adhesive layer is heated. That is, in the implemented manufacturing method, after heating in the process (A-2), in the case of irradiating energy rays, after heating, the adhesive layer is irradiated with energy rays and the adhesive force is measured. In addition, in the implemented manufacturing method, before heating in the process (A-2), in the case of irradiating energy rays, before heating, the adhesive layer is irradiated with energy rays and the adhesive force is measured.
另外,接著力係以與工程(A-2)之加熱相同的條件對黏貼寬度25mm、長度150mm之第2支持片的被著體進行加熱之後而測量出。具體之接著力的測量係在溫度23℃、濕度50%RH之條件下,以剝離角度180°、剝離速度300mm/分鐘,從被著體剝離第2支持片而進行。 In addition, the adhesive force was measured after heating the adherend to which the second support sheet with a width of 25 mm and a length of 150 mm was adhered under the same conditions as the heating in the process (A-2). The specific adhesive force measurement was performed by peeling the second support sheet from the adherend under the conditions of a temperature of 23°C and a humidity of 50%RH, a peeling angle of 180°, and a peeling speed of 300mm/min.
在此,作為被著體,使用黏著於SUS304之第2保護膜形成層。第2保護膜形成層係藉由與上述工程(A-2)相同之條件的加熱而使其硬化,於剝離第2支持片之時成為第2保護膜。 Here, as the body to be adhered, a second protective film forming layer adhered to SUS304 was used. The second protective film forming layer is cured by heating under the same conditions as the above process (A-2), and becomes the second protective film when the second support sheet is peeled off.
作為具有耐熱性之第2支持片33,為具備第2基材31和第2黏著劑層32者,並且第2黏著劑層32以由例如能量線硬化型丙烯酸系黏著劑,或水分散系丙烯酸系黏著劑等所形成為佳。藉由使用該些黏著劑,可以提升即使在加熱後也難以提升接著力的第2支持片31。
As the
而且,於依(A-1)、(A-3)及(A-2)之順序進行工程之情況下,第2保護膜形成層35之加熱硬化(工程(A-2))無須於切割之前進行,即使在切割之後進行亦可。 Moreover, when the process is carried out in the order of (A-1), (A-3) and (A-2), the heating and curing of the second protective film forming layer 35 (process (A-2)) does not require cutting It can be done before, even after cutting.
具體而言,依序進行工程(I)、(II)、(III)、(A-1)、(A-3),之後,不進行工程(A-2),進行切割(工程(IV))。因此,在此情況下,切割係對在表面10A形成被硬化的保護膜25A,且於背面10B疊層硬化前之第2保護膜形成層35的半導體晶圓10進行。而且,於分割後,加熱第2保護膜形成層35而使其硬化,形成2保護膜35A(工程(A-2))。
Specifically, the process (I), (II), (III), (A-1), (A-3) is carried out in order, and then, the process (A-2) is not carried out, and the cutting is carried out (process (IV)) ). Therefore, in this case, the dicing is performed on the
在此情況下,第2保護膜形成層35之加熱硬化係於拾取之後進行為佳,尤其藉由回焊時之加熱進行為佳。
In this case, the heating and hardening of the second protective
當於拾取後,進行第2保護膜形成層35之硬化時,於加熱時,半導體晶片15(半導體晶圓10)已經從第2支持片33被剝離。因此,第2支持片33即使如上述般不具有耐熱性亦可,不會有由於工程(A-2)之加熱而使得第2支持片33之接著力變重而產生剝離不良之情形。而且,當藉由回焊時之加熱,使第2保護膜形成層35硬化時,由於無須另外設置用以使第2保護膜形成層35硬化之工程,故可以簡化工程。
When the second protective
[第4實施型態] [Fourth Implementation Type]
以下,針對本發明之第4實施型態,說明與第3實施型態不同點。 Hereinafter, regarding the fourth embodiment of the present invention, the differences from the third embodiment will be described.
在上述第3實施型態中,對熱硬化性樹脂層25和第2保護膜形成層35進行加熱而使其硬化之時序各自不同,但是在本實施型態中,同時對該些進行加熱而使其硬
化。即是,在上述第3實施型態中,工程(III)和工程(A-2)係以各自不同的時序來進行,對此在本實施型態中,工程(III)和工程(A-2)係在相同的時序整批進行。
In the third embodiment described above, the timing of heating and curing the
具體而言,在本實施型態中,於實施工程(I)、(II)之後(即是,在半導體晶圓10黏貼第1保護膜形成用薄膜20),接著,從熱硬化性樹脂層25剝離第1支持片23之後),不進行工程(III)而進行工程(A-1),在半導體晶圓10之背面10B貼合第2保護膜形成層35。
Specifically, in this embodiment, after the steps (I) and (II) are carried out (that is, the first protective
之後,如圖9所示般,藉由對硬化前之熱硬化性樹脂層25及第2保護膜形成層35被疊層在兩面之半導體晶圓10進行加熱,使熱硬化性樹脂層25及第2保護膜形成層35硬化,而形成保護膜25A及第2保護膜35A(工程(III)和工程(A-2))。另外,加熱係例如將在兩面疊層有層25、35之半導體晶圓10配置在加熱爐內部而進行。加熱方法及加熱條件由於與在上述第1實施型態中說明的工程(III)相同,故省略其說明。
After that, as shown in FIG. 9, by heating the
之後,與第3實施型態相同,在工程(A-3)中,在第2保護膜35A之上面,貼合第2支持片33,接著在工程(IV)中進行切割。在本實施型態之工程(IV)中,對在兩面形成有硬化後之保護膜25A及第2保護膜35A之半導體晶圓10進行切割。切割後,即使在本實施型態中,也與上述各實施型態相同,製造半導體裝置。
After that, as in the third embodiment, in the process (A-3), the
即使在以上的第4實施型態中,也與上述第3實施型態相同,能夠藉由保護膜25A適當地保護凸塊頸,
同時藉由第2保護膜35A,也保護半導體晶片15之背面。再者,在本實施型態中,由於同時加熱熱硬化性樹脂層25和第2保護形成層35而使其硬化,故能夠使工程簡化。
Even in the above fourth embodiment, it is the same as the above third embodiment, and the bump neck can be appropriately protected by the
而且,熱硬化性樹脂層25及第2保護膜形成層35雖然藉由被加熱而熱收縮,但是由於其熱收縮所致的力,有在半導體晶圓10產生翹曲之情形。但是,在本實施型態中,藉由該些熱硬化性樹脂層25及第2保護膜形成層35整批被加熱硬化,在硬化時產生的熱收縮所致之力被抵銷。因此,在本實施型態中,可以降低在使表面保護膜用樹脂層25或第2保護膜用形成層35進行熱硬化之時所產生的晶圓之翹曲。
Furthermore, although the
[第5實施型態] [Fifth Implementation Type]
而且,在相同的時序整批進行工程(III)和工程(A-2)之情況下,實施工程(III)和工程(A-2)之時序如上述第4實施型態般,即使非切割(工程(IV))之前亦可,即使在切割(工程(IV)之後亦可。以下,使用第5實施型態說明其態樣。 Moreover, in the case of batches of engineering (III) and engineering (A-2) in the same sequence, the sequence of implementing engineering (III) and engineering (A-2) is the same as that of the above-mentioned fourth embodiment, even without cutting (Process (IV)) can be used before, even after cutting (process (IV)). Hereinafter, the fifth embodiment will be used to explain its aspect.
在本實施型態中,與第1實施型態相同,於實施工程(I)、(II)之後(即是,在半導體晶圓黏貼第1保護膜形成用薄膜20之後,從熱硬化性樹脂層25剝離第1支持片23之後),不進行工程(III)而進行工程(A-1),在半導體晶圓10之背面10B貼合第2保護膜形成層35。而且,之後,與第4實施型態相同,在半導體晶圓10之背面側
(即是,第2保護膜形成層35之上面)貼合第2支持片33(工程(A-3),接著,進行切割(工程(IV))。在本實施型態之工程(IV)中,對在兩面疊層有硬化前之熱硬化性樹脂層25及第2保護膜形成層35之半導體晶圓10進行切割。
In this embodiment, similar to the first embodiment, after the steps (I) and (II) are implemented (that is, after the first protective
於切割(工程(IV))之後,在本實施型態中,對在半導體晶片15(個片化後的半導體晶圓)之雙面疊層的熱硬化性樹脂層25及第2保護膜形成層35同時加熱,使該些硬化,而形成保護膜25A及第2保護膜35A(工程(III)及(A-2))。在此,本實施型態之加熱硬化(工程(III)及(A-2))係與第2實施型態相同,以在拾取之後進行為佳,尤其藉由回焊時之加熱進行硬化為佳。
After dicing (process (IV)), in this embodiment, the
如上述般,即使在本實施型態中,亦能夠適當地保護凸塊頸及半導體晶片15之背面。再者,與第4實施型態相同,藉由同時進行熱硬化性樹脂層25和第2保護膜形成層35之硬化,能夠簡化工程,同時降低在半導體晶圓(半導體晶片)產生的翹曲。
As described above, even in this embodiment, the bump neck and the back surface of the
[第6實施型態] [The sixth form of implementation]
接著,針對本發明之第6實施型態,說明與第1實施型態不同點。 Next, regarding the sixth embodiment of the present invention, the differences from the first embodiment will be described.
第6實施型態之製造工程除了在上述第1實施型態中說明的工程(I)~(IV)外,還具備工程(B-1)及(B-2)。 In addition to the processes (I) to (IV) described in the above-mentioned first embodiment, the manufacturing process of the sixth embodiment also includes processes (B-1) and (B-2).
(B-1)將具備第2支持片和被設置在第2支持片上之第2保護膜形成層的第2保護膜形成用薄膜,以使第2保 護膜形成層成為貼合面之方式,貼合在半導體晶圓之背面的工程 (B-1) The second protective film forming film provided with the second supporting sheet and the second protective film forming layer provided on the second supporting sheet is used to make the second protective film The process in which the protective film forming layer becomes the bonding surface and is bonded to the backside of the semiconductor wafer
(B-2)加熱第2保護膜形成層,而形成第2保護膜的工程 (B-2) The process of heating the second protective film forming layer to form the second protective film
即是,在上述第3~第5實施型態中,雖然表示第2保護膜形成層、第2支持片分別被黏貼於半導體晶圓之背面側的態樣,但是在本實施型態中,該些作為第2保護膜形成用薄膜整批被黏貼在半導體晶圓之背面側。 That is, in the third to fifth embodiments described above, although the second protective film forming layer and the second support sheet are attached to the back side of the semiconductor wafer, respectively, in this embodiment, These are used as a second protective film forming film to be attached to the back side of the semiconductor wafer in bulk.
[工程(B-1)] [Engineering (B-1)]
在本實施型態中,與第1實施型態相同,於實施工程(I)、(II)及(III)之後(即是,在半導體晶圓10上形成保護膜25A之後),在半導體晶圓之背面10B(與凸塊面相反側之面),如圖11所示般,貼合第2保護膜形成用薄膜30。第2保護膜形成用薄膜30如圖10所示般,具備第2支持片33,和被設置在第2支持片33上之第2保護膜形成層35,將第2保護膜形成層35貼合在半導體晶圓10之背面10B。
In this embodiment, similar to the first embodiment, after the steps (I), (II), and (III) are implemented (that is, after the
在此,作為第2支持片33之具體例,雖然可以舉出如圖10、11所示般,具備第2基材31,和被形成在第2基材31之一方之表面上的第2黏著劑層32,且在第2黏著劑層32之上面形成第2保護膜形成層35者,但是即使如在第1實施型態中說明般,具有其他構成亦可。再者,第2支持片33如第1實施型態中說明般,例如圖10、11
所示般被形成較第2保護膜形成層35大一圈,以使外周區域可以接著於環狀板等之支持構件13。
Here, as a specific example of the
但是,即使第2支持片33之尺寸與第2保護膜形成層35相同亦可。第2支持片33之尺寸與第2保護膜形成層35相同之情況下,若第2保護膜形成層35及第2支持片33中之任一者被形成較半導體晶圓10大一圈,在被接著於半導體晶圓10之第2保護膜形成層35之外周區域上設置用以接著於支持構件13之雙面膠帶等之接著構件即可。
However, the size of the
[工程(B-2)] [Engineering (B-2)]
本實施型態中,於工程(B-1)之後,加熱第2保護膜形成層35而使其硬化,形成第2保護膜35A(工程(B-2))。第2保護膜形成層35之加熱,例如以藉由將在表面10A側形成保護膜25A,並且在背面10B側疊層有第2保護膜形成層35之半導體晶圓10,配置在加熱爐等內部,而進行加熱為佳。另外,本工程(B-2)中之加熱條件由於係與在第1實施型態之工程(III)中說明的加熱條件同樣的條件,故省略其說明。
In this embodiment, after the process (B-1), the second protective
接著,切割在兩面形成有保護膜25A及第2保護膜35A之半導體晶圓10(工程(IV))。切割後,拾取半導體晶片15,與上述各實施型態相同製造半導體裝置。
Next, the
另外,在本實施型態中,於加熱第2保護膜形成層35而使其硬化之時,第2支持片33被黏貼於第2
保護膜形成層35。因此,於工程(B-2)之加熱時,為了防止第2支持片33之接著力變重,第2支持片33具有耐熱性為佳。具有耐熱性之第2支持片33由於如同上述說明般,故省略其說明。
In addition, in the present embodiment, when the second protective
即使在以上之第6實施型態中,能夠藉由保護膜25A適當地保護凸塊頸,同時藉由第2保護膜35A保護半導體晶圓10(半導體晶片15)之背面。而且,在本實施型態中,第2保護膜形成層35,和第2支持片33由於作為第2保護膜形成用薄膜30整批被黏貼於半導體晶圓10之背面,故能夠簡化工程。
Even in the above sixth embodiment, the bump neck can be appropriately protected by the
在上述第6實施型態中,雖然於切割(工程(IV)之前進行工程(B-2),但是工程(B-2)不一定要於切割之前進行,即使於切割之後進行亦可。 In the sixth embodiment described above, although the process (B-2) is performed before the cutting (process (IV)), the process (B-2) does not have to be performed before the cutting, and it may be performed even after the cutting.
具體而言,依序進行工程(I)、(II)、(III)及(B-1)之後,實施切割(工程(IV),之後實施工程(B-2)。因此,切割係對在表面10A形成保護膜25A,且在背面10B疊層第2保護膜形成用薄膜30(即是,第2保護膜形成層35和第2支持片33)之半導體晶圓10進行。
Specifically, after the steps (I), (II), (III), and (B-1) are carried out in sequence, the cutting is carried out (the project (IV), and then the project (B-2) is carried out. Therefore, the cutting system is right The
而且,雖然程為切割後,在工程(B-2)中,加熱第2保護膜形成層35而使其硬化,但如同在上述第2實施型態中說明般,其加熱硬化以在拾取後進行為佳,尤其以藉由回焊時之加熱進行硬化為佳。
Furthermore, although the process is after cutting, in the process (B-2), the second protective
[第7實施型態] [7th Implementation Type]
接著,針對本發明之第7實施型態,說明與第6實施型態不同點。 Next, regarding the seventh embodiment of the present invention, the differences from the sixth embodiment will be described.
在上述第6實施型態中,對熱硬化性樹脂層25和第2保護膜形成層35進行加熱而使其硬化之時序各自不同,但是在第7實施型態中,同時對該些進行加熱而使其硬化。即是,在上述第6實施型態中,工程(III)和工程(B-2)係以各自不同的時序來進行,而在本實施型態中,工程(III)和工程(B-2)係在相同的時序整批進行。
In the sixth embodiment described above, the
即是,在本實施型態中,於實施工程(I)、(II)之後,不進行工程(III),進行工程(B-1)。如此一來,在本實施型態中,如圖12所示般,在半導體晶圓10之表面10A,疊層熱硬化性樹脂層25,在背面10B疊層第2保護膜形成用薄膜30(即是,第2保護膜形成層35和第2支持片33)。
That is, in this embodiment, after the projects (I) and (II) are implemented, the project (III) is not carried out, and the project (B-1) is carried out. Thus, in this embodiment, as shown in FIG. 12, the
接著,藉由對硬化前之熱硬化性樹脂層25及第2保護膜形成層35被疊層在兩面之半導體晶圓10進行加熱,使熱硬化性樹脂層25及第2保護膜形成層35硬化,而形成保護膜25A及第2保護膜35A(工程(III)和工程(B-2))。此時,半導體晶圓10藉由被黏貼於第2保護膜35A上之第2支持片33被支持。
Next, by heating the
於加熱硬化後,被第2支持片33之半導體晶圓10藉由切割,被個片化成保護膜25A與第2保護膜35A,取得在兩面形成保護膜25A和第2保護膜35A之半導體晶片15(工程(IV))。之後,拾取半導體晶片15,與上
述各實施型態相同製造半導體裝置。
After heat curing, the
另外,在本實施型態中,由於在第2支持片33被黏貼於第2保護膜形成層35上之狀態下,進行第2保護膜形成層35之加熱硬化,故以第2支持片33具有耐熱性為佳。具有耐熱性之第2支持片之詳細如同上述說明般。
In addition, in this embodiment, since the second protective
即使在以上之第7實施型態中,亦能夠保護凸塊頸及半導體晶圓10(半導體晶片15)之背面10B,同時藉由使用第2保護膜形成用薄膜30簡化工程。而且,由於同時加熱熱硬化性樹脂層25和第2保護膜形成層35而使其硬化,故能夠簡化工程,同時也能夠防止在半導體晶圓(半導體晶片)產生翹曲。
Even in the above seventh embodiment, the bump neck and the
[第8實施型態] [Eighth Implementation Type]
接著,針對第8實施型態,說明與第7實施型態不同點。 Next, regarding the eighth embodiment, the differences from the seventh embodiment will be described.
在上述第7實施型態中,雖然於切割(工程(IV))之前進行熱硬化性樹脂層25及第2保護膜形成層35之加熱硬化(工程(III)及工程(B-2)),但是該些不一定要於切割之前進行,即使於切割之後進行亦可。使用以下之第8實施型態說明其態樣。
In the seventh embodiment described above, although the
在本實施型態中,與第7實施型態相同,依序進行工程(I)、(II)及(B-1)之後,切割半導體晶圓10而個片化成半導體晶片15(工程(IV))。在此,切割係對在表面10A疊層熱硬化性樹脂層25,在背面10B疊層第2保
護膜形成層35之半導體晶圓10進行。此時,半導體晶圓10藉由被黏貼於第2保護膜形成層35A上之第2支持片33被支持。
In this embodiment, similar to the seventh embodiment, after the steps (I), (II), and (B-1) are carried out in sequence, the
於切割後,整批加熱各半導體晶片15上之熱硬化性樹脂層25及第2保護膜形成層35而使其硬化(工程(III)及(B-2))。在此情況下,該些熱硬化性樹脂層25及第2保護膜形成層35之加熱硬化,係如同上述說明般,於拾取之後進行為佳,尤其藉由回焊時之加熱進行硬化為佳。
After dicing, the
即使在以上之第8實施型態中,也與第7實施型態相同,可以適當地保護凸塊頸及半導體晶圓10(半導體晶片15)之背面10B,同時可以簡化工程,並且也能夠防止在半導體晶圓(半導體晶片)產生的翹曲。再者,第2支持片無須具有耐熱性。
Even in the above eighth embodiment, it is the same as the seventh embodiment. The bump neck and the
另外,在以上之各實施型態中,雖然第1支持片23被剝離之工程(II)表示在緊接著工程(I)之後被進行的態樣,但是若在工程(III)之前,在任何階段進行亦可。例如,在第4實施型態中,雖然表示依序進行工程(I)、(II)、(A-1),之後,整批進行工程(III)及(A-2)的態樣,但是即使依序進行工程(I)、(A-1)及(II),之後整批進行工程(III)及工程(A-2)亦可。在第5實施型態中也相同。
In addition, in each of the above embodiments, although the process (II) where the
而且,在第7實施型態中,雖然表示依序進行工程(I)、(II)、(B-1),之後,整批進行工程(III)及(B-2),但是即使依序進行工程(I)、(B-1)及(II),之後整批進行工程(III)及工程(B-2)亦可。在第8實施型態中也相同。 Moreover, in the seventh embodiment, although it means that the projects (I), (II), (B-1) are carried out in order, and then the whole batch of projects (III) and (B-2) are carried out, but even if Carry out works (I), (B-1) and (II), and then carry out works (III) and works (B-2) in a batch. The same applies to the eighth embodiment.
再者,在上述第2~第8實施型態中,針對半導體晶圓之背面研削,雖然無特別提及,但是於進行半導體晶圓之背面研削之情況下,若與第1實施型態相同,在工程(I)和工程(II)之間實施即可。但是,背面研削係在第2保護膜形成層35被黏貼於半導體晶圓10之背面10B之情況下,於第2保護膜形成層35之黏貼前進行。
Furthermore, in the above-mentioned second to eighth embodiments, although there is no special mention for the backside grinding of semiconductor wafers, in the case of backside grinding of semiconductor wafers, if it is the same as the first embodiment , It can be implemented between project (I) and project (II). However, when the second protective
再者,即使在第4~第8本實施型態中,對第2保護膜35A,或第2保護膜用形成層35,進行雷射印字亦可。另外,在第4實施型態中,在工程(III)及工程(A-2),和工程(A-3)之間,露出被硬化的第2保護膜35A。因此,在第4實施型態中,以在工程(III)及(A-2)和工程(A-3)之間對其露出之第2保護膜35A進行雷射印字為佳。
In addition, even in the fourth to eighth embodiments, the second
10:半導體晶圓 10: Semiconductor wafer
10A:表面 10A: Surface
10B:背面 10B: Back
11:凸塊 11: bump
20:第1保護膜形成用薄膜 20: Film for forming the first protective film
21:第1基材 21: The first substrate
22:第1黏著劑層 22: The first adhesive layer
23:第1支持片 23: The first support piece
25:熱硬化性樹脂層 25: Thermosetting resin layer
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WO2020175423A1 (en) * | 2019-02-26 | 2020-09-03 | リンテック株式会社 | Thermosetting resin film and sheet for forming first protective film |
TWI834820B (en) * | 2019-02-26 | 2024-03-11 | 日商琳得科股份有限公司 | Thermosetting resin film and first protective film forming sheet |
JP6803498B1 (en) * | 2019-03-29 | 2020-12-23 | 三井化学東セロ株式会社 | Manufacturing method of electronic device |
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