TWI727461B - Substrate processing method and substrate processing apparatus - Google Patents
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- TWI727461B TWI727461B TW108137337A TW108137337A TWI727461B TW I727461 B TWI727461 B TW I727461B TW 108137337 A TW108137337 A TW 108137337A TW 108137337 A TW108137337 A TW 108137337A TW I727461 B TWI727461 B TW I727461B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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Abstract
Description
本發明係關於一種基板處理方法以及基板處理裝置。The invention relates to a substrate processing method and a substrate processing device.
在以往的半導體器件(semiconductor device)之製造中係有使用基板處理裝置，前述基板處理裝置係利用許多種類的處理液來對半導體基板(以下簡稱為「基板」)進行處理。例如將處理液供給至表面上形成有阻劑(resist)之圖案(pattern)的基板，藉此對基板之表面進行蝕刻等的處理。在日本特開2010-67819號公報中係已揭示以下的手法：在噴嘴體從半導體晶圓(semiconductor wafer)之周邊部轉向中心部時使移動速度逐漸地增加，且在從中心部轉向周邊部時使移動速度逐漸地降低，藉此均勻地進行蝕刻處理。In the conventional semiconductor device (semiconductor device) manufacturing, a substrate processing apparatus is used. The aforementioned substrate processing apparatus uses many types of processing liquids to process semiconductor substrates (hereinafter referred to as "substrates"). For example, the processing liquid is supplied to a substrate on which a resist pattern is formed, thereby performing processing such as etching on the surface of the substrate. Japanese Patent Laid-Open No. 2010-67819 has disclosed the following method: when the nozzle body turns from the peripheral part of the semiconductor wafer to the center part, the moving speed is gradually increased, and when the nozzle body turns from the center part to the peripheral part At this time, the moving speed is gradually reduced, thereby uniformly performing the etching process.
可是，形成於基板上的膜之厚度會有因相對於基板的成膜方法等而從中央部轉向外周緣部逐漸地變大之情形。在此情況下，為了要使膜之厚度均勻化(使膜平坦化)而在蝕刻處理中被要求隨著轉向外周緣部而增大蝕刻量。在從已在與基板之中央部對向的中央位置停止的噴嘴部噴出蝕刻液的情況下，在基板之中央部的蝕刻量會變大。在與基板之外周緣部對向的位置與中央位置之間一邊以固定之移動速度來移動噴嘴部一邊從噴嘴部噴出蝕刻液的情況下，基板之中央部的蝕刻量也會變大。However, the thickness of the film formed on the substrate may gradually increase from the central part to the outer peripheral part due to the film forming method with respect to the substrate. In this case, in order to make the thickness of the film uniform (flatten the film), it is required to increase the etching amount as it turns to the outer peripheral edge in the etching process. When the etching liquid is ejected from the nozzle portion that has stopped at the center position opposite to the center portion of the substrate, the etching amount in the center portion of the substrate becomes larger. When the nozzle portion is moved at a fixed moving speed between the position facing the outer peripheral edge of the substrate and the center position while the etching liquid is ejected from the nozzle portion, the etching amount of the center portion of the substrate also increases.
另一方面，隨著噴嘴部之位置遠離中央位置而降低噴嘴部之移動速度，藉此可隨著轉向外周緣部而大致增大蝕刻量。然而，實際上，在基板之外周緣部以及其內側附近，蝕刻量係成為大致固定。雖然也可考慮從噴嘴部將蝕刻液供給至基板之外周端面(斜面(bevel)部)附近並僅對外周緣部進行蝕刻，但是在此情況下，有可能已撞擊到基板之外周端面的蝕刻液會濺起並透過周圍之杯體等而再附著於基板。也有因杯體之存在而無法將噴嘴部配置於基板之外周端面的上方之情形。On the other hand, as the position of the nozzle part moves away from the center position, the moving speed of the nozzle part is reduced, whereby the etching amount can be substantially increased as the position of the nozzle part is turned to the outer peripheral edge part. However, in reality, the etching amount becomes substantially constant at the outer peripheral edge portion of the substrate and the vicinity of the inner side thereof. Although it is also conceivable to supply the etching solution from the nozzle portion to the vicinity of the outer peripheral end surface (bevel portion) of the substrate and to etch only the outer peripheral edge portion, in this case, the etching solution may have hit the outer peripheral end surface of the substrate It will splash and pass through the surrounding cup and then attach to the substrate. There are cases where the nozzle part cannot be arranged above the outer peripheral end surface of the substrate due to the presence of the cup.
又，在遍及於基板之整體被要求使膜之蝕刻量成為均等的情況下，有時基板之外周緣部中的蝕刻量也會比外周緣部之內側附近還不足。更且，在使用蝕刻液以外之處理液的情況下，有時基板之外周緣部中的處理之程度也會比外周緣部之內側附近還不足。從而，有被要求以下的手法：抑制基板之外周端面上的處理液之濺起，並且將藉由處理液對外周緣部追加的處理限定在較窄的範圍內進行。In addition, when the etching amount of the film is required to be uniform over the entire substrate, the etching amount in the outer peripheral edge of the substrate may be less than the vicinity of the inner side of the outer peripheral edge. Furthermore, when a processing liquid other than the etching liquid is used, the degree of processing in the outer peripheral edge portion of the substrate may be less than that in the vicinity of the inner side of the outer peripheral edge portion. Therefore, the following methods are required to suppress the splashing of the processing liquid on the outer peripheral end surface of the substrate, and to limit the processing added to the outer peripheral portion by the processing liquid to a narrow range.
本發明係關於一種基板處理裝置中的基板處理方法，本發明的目的在於抑制基板之外周端面上的處理液之濺起，並且將藉由處理液對外周緣部追加的處理限定在較窄的範圍內進行。The present invention relates to a substrate processing method in a substrate processing apparatus. The object of the present invention is to suppress the splashing of the processing liquid on the outer peripheral end surface of the substrate, and to limit the processing added by the processing liquid to the outer peripheral portion within a narrow range Within.
在本發明的基板處理方法中，基板處理裝置係具備：基板保持部，係將圓板狀之基板保持在水平狀態；基板旋轉機構，係旋轉前述基板保持部；處理液供給部，係將處理液從噴嘴部朝向前述基板之上表面噴出；以及噴嘴移動機構，係使前述噴嘴部一邊靠近前述上表面一邊可沿前述上表面從與前述上表面之外周緣部對向的最外位置移動至徑向之內側；前述基板處理方法係具備：a)工序，係一邊沿所旋轉的前述基板之前述上表面移動前述噴嘴部一邊從前述噴嘴部對前述上表面噴出前述處理液，或者從已在與前述上表面之中央部對向的中央位置停止的前述噴嘴部對所旋轉的前述基板之前述上表面噴出前述處理液；以及b)工序，係從已在前述最外位置停止的前述噴嘴部對所旋轉的前述基板之前述上表面噴出前述處理液；藉由已配置於前述最外位置的前述噴嘴部對比前述基板之外周端面更靠內側的區域噴出前述處理液；前述b)工序中的前述基板之轉速係比前述a)工序中的前述轉速更高，或／及前述b)工序中的前述處理液之噴出流量係比前述a)工序中的前述噴出流量更低。In the substrate processing method of the present invention, the substrate processing apparatus includes: a substrate holding portion that holds a disc-shaped substrate in a horizontal state; a substrate rotating mechanism that rotates the aforementioned substrate holding portion; and a processing liquid supply portion that holds the substrate The liquid is ejected from the nozzle portion toward the upper surface of the substrate; and a nozzle moving mechanism that allows the nozzle portion to move along the upper surface from the outermost position opposite to the outer peripheral edge portion of the upper surface while approaching the upper surface. Inward in the radial direction; the substrate processing method includes: a) step of spraying the processing liquid from the nozzle portion on the upper surface from the nozzle portion while moving the nozzle portion along the upper surface of the rotating substrate, or from the The nozzle part stopped at the center position opposite to the center part of the upper surface sprays the processing liquid on the upper surface of the rotating substrate; and b) step is from the nozzle part stopped at the outermost position The treatment liquid is sprayed to the upper surface of the rotating substrate; the nozzle part arranged at the outermost position is used to spray the treatment liquid on the inner side of the outer peripheral end surface of the substrate; in the step b) The rotation speed of the substrate is higher than the rotation speed in the step a), or/and the ejection flow rate of the processing liquid in the step b) is lower than the ejection flow rate in the step a).
依據本發明，能夠抑制基板之外周端面中的處理液之濺起，並且能夠將處理液對外周緣部追加的處理限定在較窄的範圍內進行。According to the present invention, it is possible to suppress the splashing of the processing liquid on the outer peripheral end surface of the substrate, and it is possible to restrict the processing of the processing liquid to the outer peripheral portion to be performed within a narrow range.
在本發明之一較佳的形態中，在前述a)工序中，前述噴嘴部係在前述中央位置與前述最外位置之間移動，且前述噴嘴部之位置越接近前述最外位置則前述噴嘴部之移動速度就越低。In a preferred aspect of the present invention, in the step a), the nozzle portion is moved between the center position and the outermost position, and the closer the position of the nozzle portion is to the outermost position, the nozzle The lower the moving speed of the body.
在本發明之另一較佳的形態中，在前述a)工序中，前述噴嘴部係在前述中央位置與前述最外位置之間移動，且前述噴嘴部之位置越接近前述最外位置則前述基板之轉速就越低，或前述處理液之噴出流量就越高；前述b)工序中的前述基板之轉速係比在前述a)工序中前述噴嘴部被配置於前述最外位置之內側附近時的前述轉速更高，或／及前述b)工序中的前述處理液之噴出流量係比在前述a)工序中前述噴嘴部被配置於前述最外位置之內側附近時的前述噴出流量更低。In another preferred aspect of the present invention, in the step a), the nozzle portion is moved between the center position and the outermost position, and the closer the nozzle portion is to the outermost position, the closer the nozzle portion is to the outermost position. The lower the rotation speed of the substrate, or the higher the ejection flow rate of the processing liquid; the rotation speed of the substrate in the step b) is higher than that in the step a) when the nozzle portion is arranged near the inner side of the outermost position The rotation speed of is higher, or/and the ejection flow rate of the processing liquid in the step b) is lower than the ejection flow rate when the nozzle portion is arranged near the inner side of the outermost position in the step a).
較佳為，前述處理液是蝕刻前述上表面上所設置的膜的蝕刻液(etching liquid)；在前述上表面之前述中央部除外的區域中，藉由前述a)工序以及前述b)工序所致的前述膜之蝕刻量係隨著轉向前述外周緣部而逐漸增大。Preferably, the treatment liquid is an etching liquid for etching a film provided on the upper surface; in the area except for the central portion of the upper surface, the process is performed by the steps a) and b). The resulting etching amount of the film gradually increases as it turns to the outer peripheral edge portion.
在本發明之另一較佳的形態中，在前述a)工序中，前述噴嘴部係在前述中央位置與前述最外位置之間反覆移動，並且在前述噴嘴部到達前述最外位置之後立刻轉向前述中央位置；在前述a)工序完成後，前述噴嘴部係被配置於前述最外位置且進行前述b)工序。In another preferred aspect of the present invention, in the step a), the nozzle portion is moved repeatedly between the center position and the outermost position, and the nozzle portion is turned immediately after reaching the outermost position. The aforementioned central position; after the aforementioned step a) is completed, the aforementioned nozzle portion is arranged at the aforementioned outermost position and the aforementioned step b) is performed.
在本發明之另一較佳的形態中，在前述a)工序中，前述噴嘴部係在前述中央位置與前述最外位置之間反覆移動，在前述噴嘴部到達前述最外位置時前述噴嘴部會暫時在前述最外位置停止且進行前述b)工序。In another preferred aspect of the present invention, in the step a), the nozzle portion moves repeatedly between the center position and the outermost position, and when the nozzle portion reaches the outermost position, the nozzle portion It will temporarily stop at the aforementioned outermost position and proceed to the aforementioned step b).
在本發明之另一較佳的形態中，前述基板保持部係具備複數個夾持銷(chuck pin)，前述複數個夾持銷係抵接於前述基板之前述外周端面。In another preferred aspect of the present invention, the substrate holding portion includes a plurality of chuck pins, and the plurality of chuck pins abut against the outer peripheral end surface of the substrate.
在本發明之另一較佳的形態中，前述基板處理裝置係更具備杯體(cup)，前述杯體係包圍藉由前述基板保持部所保持的前述基板之周圍；已配置於前述最外位置的前述噴嘴部係靠近前述杯體之上部。In another preferred aspect of the present invention, the substrate processing apparatus is further provided with a cup, and the cup system surrounds the periphery of the substrate held by the substrate holding portion; and is arranged at the outermost position The nozzle part is close to the upper part of the cup.
在本發明之另一較佳的形態中，前述處理液是蝕刻前述上表面上所設置的膜的蝕刻液；前述基板處理方法係更具備：準備教師資料(teacher data)的工序，前述教師資料係藉由取得前述膜之蝕刻結果與進行前述a)工序以及前述b)工序之前的前述膜之厚度資訊來表示前述複數個基板中的前述膜之厚度資訊、處理條件以及前述蝕刻結果，前述膜之蝕刻結果係藉由對前述上表面設置有膜的複數個基板以互為不同之前述處理條件進行前述a)工序以及前述b)工序所獲得；以及藉由使用了前述教師資料的學習來建構判定部的工序。 In another preferred aspect of the present invention, the processing liquid is an etching liquid for etching the film provided on the upper surface; the substrate processing method further includes the step of preparing teacher data. By obtaining the etching result of the film and the thickness information of the film before performing the a) process and the b) process, the thickness information of the film in the plurality of substrates, the processing conditions, and the etching result are expressed. The etching result is obtained by performing the a) process and the b) process on a plurality of substrates with a film on the upper surface under different processing conditions; and is constructed by learning using the teacher information The process of the judging section.
在此情況下，較佳為，基板處理方法，更具備：對處理對象之基板取得前述膜之厚度資訊的工序；以及使用前述基板的前述膜之厚度資訊並藉由前述判定部來取得前述處理條件的工序。 In this case, it is preferable that the substrate processing method further includes: a step of obtaining the thickness information of the film on the substrate to be processed; and using the thickness information of the film on the substrate to obtain the processing by the determination unit Conditional process.
本發明亦關於一種基板處理裝置。本發明的基板處理裝置，係具備：基板保持部，係將圓板狀之基板保持在水平狀態；基板旋轉機構，係旋轉前述基板保持部；處理液供給部，係從噴嘴部朝向前述基板之上表面噴出處理液；噴嘴移動機構，係使前述噴嘴部一邊靠近前述上表面一邊可沿前述上表面從與前述上表面之外周緣部對向的最外位置移動至徑向之內側；以及控制部，係藉由控制前述基板旋轉機構、前述處理液供給部以及前述噴嘴移動機構來執行第一噴出動作以及第二噴出動作，前述第一噴出動作係一邊沿所旋轉的前述基板之前述上表面來移動前述噴嘴部一邊從前述噴嘴部對前述上表面噴出前述處理液，或者從已在與前述上表面之中央部對向的中央位置停止的前述噴嘴部對所旋轉的前述基板之前述上表面噴出前述處理液，前述第二噴出動作係從已在前述最外位置停止的前述噴嘴部對所旋轉的前述基板之前述上表面噴出前述處理液；藉由已配置於前述最外位置的前述噴嘴部對比前述基板之外周端面更靠內側的區域噴出前述處理液；前述第二噴出動作中的前述基板之轉速係比前述第一噴出動作中的前述轉速更高，或/及前述第二噴出動作中的前述處理液之噴出流量係比前述第一噴出動作中的前述噴出流量更低。The invention also relates to a substrate processing device. The substrate processing apparatus of the present invention is provided with: a substrate holding portion that holds a disc-shaped substrate in a horizontal state; a substrate rotating mechanism that rotates the substrate holding portion; and a processing liquid supply portion that faces the substrate from the nozzle portion The upper surface sprays the treatment liquid; the nozzle moving mechanism enables the nozzle portion to move along the upper surface from the outermost position opposite to the outer peripheral edge portion of the upper surface to the inner side in the radial direction while approaching the upper surface; and control The first ejection action and the second ejection action are performed by controlling the substrate rotating mechanism, the processing liquid supply section, and the nozzle moving mechanism. The first ejection action is along the upper surface of the substrate being rotated. To move the nozzle portion while spraying the processing liquid from the nozzle portion on the upper surface, or from the nozzle portion stopped at the center position opposite to the center portion of the upper surface to the upper surface of the rotating substrate The processing liquid is ejected, and the second ejection action is to eject the processing liquid from the nozzle portion stopped at the outermost position to the upper surface of the rotating substrate; by means of the nozzles arranged at the outermost position The processing liquid is ejected from the area on the inner side of the outer peripheral end surface of the substrate; the rotational speed of the substrate in the second ejection operation is higher than the rotational speed in the first ejection operation, or/and the second ejection operation The ejection flow rate of the treatment liquid in the above is lower than the ejection flow rate in the first ejection operation.
上述之目的以及其他之目的、特徵、態樣以及優點係參照所附圖式並藉由以下所進行的本發明之詳細說明而明白。The above-mentioned objects and other objects, features, aspects and advantages will be understood with reference to the accompanying drawings and the following detailed description of the present invention.
圖1係顯示本發明之一實施形態的基板處理裝置1之構成的圖。基板處理裝置1是逐片處理圓板狀之基板9的葉片式之裝置。基板處理裝置1係具備：基板保持部21、基板旋轉機構22、杯體23、處理液供給部3、沖洗液供給部4、噴嘴移動機構5以及控制部10。基板保持部21、基板旋轉機構22、杯體23、噴嘴移動機構5以及後述的噴嘴部31係設置於省略圖示的腔室(chamber)內。在基板處理裝置1中，亦可設置有複數個腔室。控制部10例如是包含CPU (Central Processing Unit；中央處理單元)等的電腦(computer)，且負責基板處理裝置1的整體控制。FIG. 1 is a diagram showing the structure of a
基板保持部21係具有以面向上下方向的中心軸J1作為中心的圓板狀之基底部211。在基底部211之上表面係設置有複數個夾持銷212。複數個夾持銷212係在以中心軸J1作為中心的圓周上等間隔地配置於周方向。在基板保持部21中，可利用省略圖示的致動器(actuator)(馬達(motor)、氣缸(air cylinder)等)來驅動複數個夾持銷212。在基板保持部21保持基板9時，複數個夾持銷212係抵接於基板9之外周端面。藉此，基板9能以水平狀態保持在基底部211之上方。已藉由基板保持部21所保持的基板9之中心係位於中心軸J1上。基底部211之上表面係與面向基板9之下方的主面平行，兩者係隔出間隙而相互地對向。藉由基板處理裝置1之設計，基板保持部21亦可具有與面向基板9之下方的主面抵接的吸附夾具或靜電夾具。The
以中心軸J1作為中心的軸部221之一端係固定於基底部211之下表面的中央。具有馬達的基板旋轉機構22係軸部221之另一端部，藉此基板保持部21能與基板9一起以中心軸J1作為中心進行旋轉。杯體23為大致筒狀且包圍藉由基板保持部21所保持的基板9之周圍。在基板處理裝置1中，作為杯體23之上部的杯體上部231係可藉由省略圖示的杯體升降機構朝向上下方向進行升降。在後述的基板9之處理中，從所旋轉的基板9之外周緣飛散的處理液係藉由杯體上部231之内周面所承接且回收。在基板9往基板處理裝置1搬入搬出時，藉由杯體上部231下降就能防止杯體23與外部之搬運機構干涉。杯體升降機構係包含作為動力源的馬達或氣缸。One end of the
處理液供給部3係具備噴嘴部31以及處理液供給源32。噴嘴部31例如是朝向上下方向延伸的直管噴嘴(straight nozzle)。噴嘴部31亦可為其他的形狀。噴嘴部31係位於面向基板9之上方的主面91(以下稱為「上表面91」)側。如後所述，噴嘴部31係可藉由噴嘴移動機構5沿上表面91移動。噴嘴部31之下端面係與上表面91直接對向。處理液供給源32係透過流量控制閥33以及開閉閥34而連接於噴嘴部31之上端，且從處理液供給源32對噴嘴部31供給蝕刻液。蝕刻液係從噴嘴部31之下部的噴出口朝向下方噴出。亦即，從噴嘴部31朝向基板9之上表面91噴出蝕刻液。在噴嘴部31與上表面91之間係形成有蝕刻液的液柱。蝕刻液是可蝕刻基板9之上表面91所設置的後述之膜的處理液，例如是檸檬酸(citric acid)與雙氧水(hydrogen peroxide)(H2
O2
)的混合液。作為蝕刻液，只要可蝕刻基板9上的膜就可利用酸、鹼(alkali)等許多種類的處理液。The processing
沖洗液供給部4係具備：噴嘴部31以及沖洗液供給源42。噴嘴部31係由處理液供給部3以及沖洗液供給部4所共有。沖洗液供給源42係透過開閉閥44而連接於噴嘴部31 。從沖洗液供給源42對噴嘴部31供給有沖洗液，藉此從噴嘴部31朝向基板9之上表面91噴出沖洗液。沖洗液例如是純水(DeIonized Water；去離子水)。亦可使用純水以外的沖洗液。在沖洗液供給部4中，亦可設置有與處理液供給部3為個別的噴嘴部。The rinsing
手臂(arm)51之一端係固定於噴嘴部31。手臂51係朝向與中心軸J1垂直的方向延伸。手臂51之另一端係支撐於噴嘴移動機構5。噴嘴移動機構5係具有馬達。噴嘴移動機構5係以與中心軸J1平行的旋轉軸J2作為中心來轉動手臂51，藉此噴嘴部31會沿基板9之上表面91移動。噴嘴移動機構5係可在後述的中央位置與最外位置之間一邊任意變更移動速度(掃描速度)一邊連續地移動噴嘴部31。噴嘴移動機構5亦可將手臂51朝向中心軸J1之方向進行升降。噴嘴移動機構5之構成係可做適當變更，例如亦可使用使噴嘴部31朝向一方向直線前進的機構。One end of the
圖2係用以說明噴嘴移動機構5之動作的圖。在圖2中係顯示從上側面向下方所觀察的基板9、噴嘴部31以及噴嘴移動機構5。在基板處理裝置1中，於不使用噴嘴部31的期間，如圖2中之一點鏈線所示，噴嘴部31係配置於已從基板9之上方脫離的位置(以下稱為「待機位置」)。在沿中心軸J1所觀察的情況下，待機位置是噴嘴部31不與基板9重疊的位置。實際上，在基板保持部21之周圍係設置有杯體23(參照圖1)，待機位置是比杯體23更靠外側(與中心軸J1為相反側)的位置。FIG. 2 is a diagram for explaining the operation of the
又，在使用噴嘴部31時係藉由噴嘴移動機構5在噴嘴部31已靠近基板9之上表面91的狀態下配置於基板9之上方。在本實施形態中，噴嘴部31係配置於與上表面91之外周緣部93對向的位置(圖2中以實線所示的噴嘴部31之位置，以下稱為「最外位置」)、以及與上表面91之中央部對向的位置(圖2中以二點鏈線所示的噴嘴部31之位置，以下稱為「中央位置」)之間的其中任一個位置。In addition, when the
如已述般，在基板9之周圍係設置有杯體23，且在噴嘴部31已靠近上表面91的狀態下，噴嘴部31之下端係比杯體上部231之上端更位於下方(參照後述的圖3)。又，已配置於最外位置的噴嘴部31係靠近杯體上部231。從而，噴嘴移動機構5係可一邊使噴嘴部31靠近上表面91一邊沿上表面91從以中心軸J1作為中心的徑向最外位置移動至內側(中心軸J1側)。再者，在將位於待機位置的噴嘴部31配置於基板9之上方時，亦可進行藉由噴嘴移動機構5所為的噴嘴部31之升降。又，亦可在杯體上部231之上端已下降至比基板9更下方的狀態下，噴嘴部31從待機位置往基板9之上方移動，之後杯體上部231上升。As described above, the
圖3係顯示基板9之外周緣部93附近的圖，且顯示包含中心軸J1之面中的基板9之剖面。在圖3中亦顯示已配置於最外位置的噴嘴部31。在基板9之上表面91係設置有膜911。膜911係藉由預定之材料(例如，鈷(co)、氮化鈦(Tin)或鎢(W)等金屬的材料)所形成且覆蓋基板9之上表面91的整體。在本實施形態中，膜911之厚度係在上表面91之中央部除外的區域(亦即，比中央部更靠外側的區域)中隨著轉向外周緣部93而逐漸增大。在圖3中係強調膜911之厚度的變化。FIG. 3 is a diagram showing the vicinity of the outer
在此，基板9之外周緣部93是在上表面91中鄰接於外周端面(斜面部)94的環狀區域，且位於比外周端面94更內側。在外周端面94中法線方向係傾斜於上下方向，相對於此，在外周緣部93中法線方向係平行於上下方向。在使用直徑300mm之基板9的情況下，外周緣部93之寬度例如是5mm至15mm。如已述般，已配置於最外位置的噴嘴部31係在上下方向上與外周緣部93對向且朝向外周緣部93噴出蝕刻液。已從噴嘴部31噴出的蝕刻液係碰撞到外周緣部93。此時，蝕刻液的液柱係不碰觸到外周端面94，亦即，蝕刻液不會直接碰撞到外周端面94。Here, the outer
圖4係顯示基板處理裝置1處理基板9之流程的圖。在圖1的基板處理裝置1中係可事前藉由外部的搬運機構來搬入處理對象的基板9且藉由基板保持部21所保持。在基板9的處理中，首先是藉由基板旋轉機構22來開始基板9之旋轉(步驟S11)。基板9係以事先所設定的固定之轉速(例如，500rpm至2500rpm)在水平狀態下進行旋轉。FIG. 4 is a diagram showing the flow of processing the
接著，位於待機位置的噴嘴部31係藉由噴嘴移動機構5而配置於中央位置。然後，開始來自噴嘴部31之蝕刻液的噴出、以及位於中央位置與最外位置之間的噴嘴部31之移動(擺動)。藉此，執行第一噴出動作(步驟S12)，前述第一噴出動作係一邊沿基板9之上表面91來移動噴嘴部31一邊從噴嘴部31對上表面91噴出蝕刻液。在第一噴出動作中，噴嘴部31中的蝕刻液之噴出流量為固定。又，噴嘴部31係在到達最外位置之後立刻轉向中央位置，又在到達中央位置之後立刻轉向最外位置。如此，噴嘴部31係在中央位置與最外位置之間反覆移動。Next, the
此時，如圖5所示，徑向上的噴嘴部31之位置越接近最外位置P2則噴嘴部31之移動速度就變越低。換言之，噴嘴部31之移動速度係隨著噴嘴部31從中央位置P1轉向最外位置P2而逐漸變低，且隨著從最外位置P2轉向中央位置P1而逐漸變高。可視為噴嘴部31之移動速度越低則相對於上表面91中的蝕刻液之噴出位置(徑向之位置)的蝕刻液之供給量就變越多，或者，每一單位面積的蝕刻時間變越長。結果，隨著從基板9之中央部轉向外周緣部93附近可增大藉由蝕刻液所致的膜911之蝕刻量。當然，噴嘴部31之移動速度的變化係不限定於線性，亦可為非線性。又，噴嘴部31之移動速度亦可如圖5中之二點鏈線所示地以階梯(step)狀來進行變化。在此情況下，亦可謂噴嘴部31之位置越接近最外位置P2則噴嘴部31之移動速度就越低。At this time, as shown in FIG. 5, the closer the position of the
當位於中央位置與最外位置之間的噴嘴部31之移動持續預定時間(例如，數秒)時，噴嘴部31會配置於最外位置。藉此，執行第二噴出動作(步驟S13)，前述第二噴出動作係從已在最外位置停止的噴嘴部31對基板9之上表面91噴出蝕刻液。在第二噴出動作中，基板9之轉速係被變更成比第一噴出動作時之轉速更高的轉速(例如，第一噴出動作時之轉速的數倍)。在本處理例中，噴嘴部31中的蝕刻液之噴出流量係與第一噴出動作相同。When the movement of the
在此，即便是在第一噴出動作中噴嘴部31仍會通過最外位置且對基板9之上表面91的外周緣部93噴出蝕刻液。在第一噴出動作中，已附著於外周緣部93的蝕刻液會利用藉由基板9之旋轉所致的離心力而在上表面91上朝向外側擴展。此時，由於基板9之轉速比較低，故而如圖3中以二點鏈線所示，蝕刻液81亦會在上表面91上朝向內側擴展且容易保持該狀態(容易殘留已擴展的蝕刻液81)。另一方面，第二噴出動作中之基板9之轉速係比第一噴出動作中之轉速更高。從而，如圖3中以實線所示，已從噴嘴部31噴出的蝕刻液81附著於上表面91之後，會立刻往外側(亦即，外周端面94側)擴展，且比第一噴出動作還能抑制蝕刻液81往內側之擴展。較佳為，蝕刻液81係幾乎不朝向內側擴展。結果，在第二噴出動作中係僅對外周緣部93之較窄的範圍進行藉由蝕刻液所為的蝕刻。Here, even in the first ejection operation, the
當來自已配置於最外位置的噴嘴部31之蝕刻液的噴出持續預定時間(例如，5秒至10秒)時，蝕刻液之噴出會被停止。又，基板9之轉速例如會被降低至第一噴出動作時的轉速為止。接著，噴嘴部31會在中央位置停止，並且藉由沖洗液供給部4透過噴嘴部31對上表面91供給沖洗液(步驟S14)。在上表面91中，沖洗液係藉由基板9之旋轉而朝向基板9之外周擴展且對上表面91之整體供給沖洗液。藉由沖洗液之供給，附著於上表面91的蝕刻液會被去除。在沖洗處理中，噴嘴部31亦可在中央位置與最外位置之間移動。When the spraying of the etching liquid from the
當沖洗液之噴出持續預定時間時，沖洗液之噴出會被停止。又，噴嘴部31會藉由噴嘴移動機構5往待機位置移動。然後，基板旋轉機構22會提高基板9之轉速，藉此進行基板9之乾燥處理(旋乾(spin dry))(步驟S15)。當乾燥處理完成時，基板9之旋轉會被停止(步驟S16)。基板9係藉由外部的搬運機構從基板處理裝置1被搬出。藉由以上步驟來完成基板處理裝置1中的基板9之處理。在上述處理例中，雖然是在第一噴出動作完成之後才進行第二噴出動作，但是亦可先進行第二噴出動作且在第二噴出動作完成之後才進行第一噴出動作。又，亦可在沖洗液供給之後且乾燥處理之前，對上表面91供給IPA(isopropyl alcohol；異丙醇)等的有機溶劑，而沖洗液會被置換成有機溶劑。When the spray of the rinse liquid continues for a predetermined time, the spray of the rinse liquid will be stopped. In addition, the
在此，針對在圖4之基板處理中已省略第二噴出動作(步驟S13)的比較例之基板處理加以說明。在比較例之基板處理中係藉由第一噴出動作來蝕刻上表面91的膜911(步驟S12)，前述第一噴出動作係一邊在中央位置與最外位置之間移動噴嘴部31一邊從噴嘴部31噴出蝕刻液。之後，省略第二噴出動作來進行沖洗處理以及乾燥處理，而完成基板9之處理(步驟S14至步驟S16)。Here, the substrate processing of the comparative example in which the second ejection operation (step S13) is omitted in the substrate processing of FIG. 4 will be described. In the substrate processing of the comparative example, the
圖6係顯示藉由比較例之基板處理所獲得的蝕刻量之輪廓的圖。在以下之說明中，蝕刻量之輪廓係意指膜911之蝕刻量之徑向上的變化，膜911之厚度的輪廓係意指膜911之厚度之徑向上的變化。在圖6中係以附記元件符號L2的虛線來表示藉由比較例之基板處理所取得的蝕刻量之輪廓，且以附記元件符號L0的一點鏈線來表示理想的(作為目標的)蝕刻量之輪廓。已取得輪廓L2時的第一噴出動作中的基板9之轉速為400rpm。理想的輪廓L0之形狀例如與蝕刻前的基板9之膜911之厚度的輪廓近似。再者，在理想的輪廓L0中，除了0mm至10mm的中央部附近，蝕刻量係隨著轉向外側而逐漸增大。FIG. 6 is a diagram showing the contour of the etching amount obtained by the substrate processing of the comparative example. In the following description, the contour of the etching amount means the change in the radial direction of the etching amount of the
在此，基板9之半徑為150mm，藉由比較例之基板處理所取得的輪廓L2，雖然在徑向上的0mm至130mm之範圍內會成為仿效理想的輪廓L0之形狀，但是在130mm至150mm之範圍內會與理想的輪廓L0不同且成為大致固定的蝕刻量。在徑向上的130mm至150mm之範圍中，即便在可能之範圍內降低噴嘴部31之移動速度(或者，在最外位置暫時停止噴嘴部31)來進行步驟S12之處理，但是在130mm至150mm之範圍內仍會成為大致固定的蝕刻量。如已述般，在第一噴出動作中，如圖3中之二點鏈線所示，由於從最外位置之噴嘴部31所噴出的蝕刻液81在上表面91上亦朝向內側擴展，故而可認為在徑向上的130mm至150mm之範圍內，亦即外周緣部93之附近的比較寬之範圍內，蝕刻量會成為固定。Here, the radius of the
圖7係顯示藉由包含第一噴出動作以及第二噴出動作的圖4之基板處理所獲得的蝕刻量之輪廓的圖。在圖7中係以附記元件符號L1的實線來表示藉由圖4之基板處理所取得的蝕刻量之輪廓，且以附記元件符號L2的虛線來表示藉由比較例之基板處理所取得的蝕刻量之輪廓。已取得輪廓L1時的第一噴出動作中的基板9之轉速為400rpm，第二噴出動作中的轉速為1500rpm。FIG. 7 is a diagram showing the contour of the etching amount obtained by the substrate processing of FIG. 4 including the first ejection operation and the second ejection operation. In FIG. 7, the solid line with the component symbol L1 represents the outline of the etching amount obtained by the substrate processing of FIG. 4, and the dashed line with the component symbol L2 represents the contour obtained by the substrate processing of the comparative example. The outline of the etching volume. The rotation speed of the
藉由圖4之基板處理所取得的輪廓L1係在0mm至130mm之範圍內成為仿效藉由比較例之基板處理所取得的輪廓L2、以及圖6之理想的輪廓L0之形狀。又，即便是在130mm至150mm之範圍內，蝕刻量仍會隨著轉向外側而逐漸增大。從而，在輪廓L1中係可獲得遍及於徑向之整體仿效理想的輪廓L0之形狀。在本實施形態中，用以取得與理想之輪廓L0近似的輪廓L1之處理條件(例如，第一噴出動作以及第二噴出動作之各自的基板9之轉速以及時間等)係可藉由實驗等而決定。The contour L1 obtained by the substrate processing of FIG. 4 is in the range of 0 mm to 130 mm to imitate the contour L2 obtained by the substrate processing of the comparative example, and the shape of the ideal contour L0 of FIG. 6. Moreover, even in the range of 130mm to 150mm, the etching amount will gradually increase as it turns to the outside. Therefore, in the contour L1, a shape that imitates the ideal contour L0 throughout the radial direction can be obtained. In this embodiment, the processing conditions (for example, the rotation speed and time of the
如以上說明般，在基板處理裝置1中係執行第一噴出動作(步驟S12)以及第二噴出動作(步驟S13)，前述第一噴出動作係一邊沿所旋轉的基板9之上表面91來移動噴嘴部31一邊從噴嘴部31對上表面91噴出將蝕刻液，前述第二噴出動作係從已在最外位置停止的噴嘴部31對所旋轉的基板9之上表面91噴出蝕刻液。又，第二噴出動作中的基板9之轉速係設為比第一噴出動作中的轉速更高。藉此，在第二噴出動作中，能夠比第一噴出動作更抑制已噴出至基板9之外周緣部93的蝕刻液朝向內側擴展，且能夠將藉由蝕刻液對外周緣部93追加的處理(在此為蝕刻)限定在較窄的範圍內進行。As described above, the
又，在基板處理裝置1中係藉由已配置於最外位置的噴嘴部31對比基板9之外周端面94更靠內側的區域噴出蝕刻液。藉此，能夠防止從噴嘴部31所噴出的蝕刻液直接碰撞到基板9之外周端面94以及夾持銷212，並抑制外周端面94以及夾持銷212中的蝕刻液之濺起(液體飛濺)。結果，能夠抑制已濺起的蝕刻液經由杯體上部231之内周面而再附著於上表面91並使上表面91受污染等。再者，在圖1的基板處理裝置1中，由於已配置於最外位置的噴嘴部31係靠近杯體上部231故而亦難以在比最外位置更靠外側配置噴嘴部31。In addition, in the
在上述基板處理的第一噴出動作中，徑向上的噴嘴部31之位置係越接近最外位置則噴嘴部31之移動速度就設為越低。藉此，在第一噴出動作中係能夠在基板9之上表面91的中央部除外的區域中隨著轉向外周緣部93附近而增大藉由處理液所為的處理之程度，亦即增大蝕刻液之蝕刻量。又，由於是在第二噴出動作中限定在外周緣部93之較窄的範圍內進行蝕刻，故而在外周緣部93之附近可隨著轉向外側而增大蝕刻量。結果，在上表面91之中央部除外的區域中，能夠實現藉由第一噴出動作以及第二噴出動作所致的膜911之蝕刻量隨著轉向外周緣部93而逐漸增大之較佳的輪廓。In the first ejection operation of the substrate processing described above, the closer the position of the
藉由基板9上所形成的膜911之厚度的輪廓，亦可實現膜911之蝕刻量在上表面91之整體上隨著轉向外周緣部93而逐漸增大的輪廓。又，亦可以藉由第一噴出動作以及第二噴出動作所致的膜911之蝕刻量 (藉由處理液所為的處理之程度)遍及於徑向之整體成為均等的方式來決定第一噴出動作以及第二噴出動作的處理條件。在此情況下，即便是僅在第一噴出動作中外周緣部93中的蝕刻量比外周緣部93之內側附近還不足時，仍能夠藉由進行第二噴出動作來消除外周緣部93中的蝕刻量之不足。The contour of the thickness of the
在上述處理例中，雖然第二噴出動作中的基板9之轉速設為比第一噴出動作中的轉速更高，但是亦可一邊將第一噴出動作以及第二噴出動作中的基板9之轉速設為固定，一邊將第二噴出動作中的蝕刻液之噴出流量設為比第一噴出動作中的噴出流量更低。在此情況下，在第二噴出動作中，亦能夠比第一噴出動作更抑制已噴出至基板9之外周緣部93的蝕刻液朝向內側擴展，且能夠將藉由蝕刻液對外周緣部93追加的處理限定在較窄的範圍進行。例如，第一噴出動作中的噴出流量為1000mL／min至2000mL／min，第二噴出動作中的噴出流量為第一噴出動作中的噴出流量之0.3倍至0.5倍。In the above processing example, although the rotation speed of the
又，第二噴出動作中的基板9之轉速亦可設為比第一噴出動作中的轉速更高，且第二噴出動作中的蝕刻液之噴出流量亦可設為比第一噴出動作中的噴出流量更低。如以上，在基板處理裝置1中，重要的是：第二噴出動作中的基板9之轉速比第一噴出動作中的轉速更高，或／及第二噴出動作中的蝕刻液之噴出流量比第一噴出動作中的噴出流量更低。In addition, the rotation speed of the
在基板處理裝置1中亦可進行第一噴出動作以及第二噴出動作之一方完成後進行另一方的上述之處理例(以下稱為「整體逐次處理」)以外的處理。其次，針對部分逐次處理加以說明。部分逐次處理中的第一噴出動作係與上述之整體逐次處理同樣地一邊使噴嘴部31在中央位置與最外位置之間進行重複處理一邊從噴嘴部31噴出蝕刻液(圖4：步驟S12)。在第一噴出動作中，噴嘴部31之位置越接近最外位置則噴嘴部31之移動速度就變越低。又，在噴嘴部31到達最外位置時噴嘴部31會暫時在最外位置停止且進行第二噴出動作(步驟S13)。此時，第二噴出動作中的基板9之轉速設為比第一噴出動作中的轉速更高，或／及第二噴出動作中的蝕刻液之噴出流量設為比第一噴出動作中的噴出流量更低。In the
當最外位置中的蝕刻液之噴出持續預定時間時噴嘴部31會朝向中央位置開始移動且再次啟動第一噴出動作。然後，當噴嘴部31再次到達最外位置時會進行第二噴出動作。如此，在上述部分逐次處理中，每次噴嘴部31到達最外位置時會中斷第一噴出動作並進行第二噴出動作。第二噴出動作不一定需要每次噴嘴部31到達最外位置時才進行，只要是在第一噴出動作之中途噴嘴部31到達最外位置的至少一次之時序(timing)中進行即可。When the spraying of the etching liquid in the outermost position continues for a predetermined time, the
如以上，部分逐次處理係在第一噴出動作中噴嘴部31到達最外位置時噴嘴部31會暫時在最外位置停止。然後，藉由提高基板9之轉速或／及降低蝕刻液之噴出流量來進行第二噴出動作。在此情況下，在第二噴出動作中，亦能夠抑制已噴出至外周緣部93的蝕刻液朝向內側擴展，且能夠將藉由蝕刻液對外周緣部93追加的處理限定在較窄的範圍內進行。As described above, the partial sequential processing system temporarily stops the
無論是在整體逐次處理以及部分逐次處理之哪一個處理的情況下，都可在第一噴出動作中一邊將噴嘴部31之移動速度設為固定一邊使基板9之轉速或蝕刻液之噴出流量對應於徑向上的噴嘴部31之位置而變更。Regardless of whether it is the overall sequential processing or the partial sequential processing, it is possible to adjust the rotation speed of the
如圖8所示，在變更基板9之轉速的情況下，徑向上的噴嘴部31之位置越接近最外位置P2則基板9之轉速就變越低。換言之，基板9之轉速係隨著噴嘴部31從中央位置P1轉向最外位置P2而逐漸變低，且隨著從最外位置P2轉向中央位置P1而逐漸變高。可認為基板9之轉速越低，從噴嘴部31所噴出的蝕刻液就越容易停留在該噴出位置。結果，可使藉由蝕刻液所致的膜911之蝕刻量(亦即，藉由處理液所為的處理之程度)，隨著從基板9之中央部附近轉向外周緣部93附近而增大或均等。當然，基板9之轉速的變化係不限定於線性，亦可為非線性。又，基板9之轉速亦可如圖8中之二點鏈線所示地變化成階梯狀。在此情況下，亦可謂噴嘴部31之位置越接近最外位置P2則基板9之轉速就越低。As shown in FIG. 8, when the rotation speed of the
在第一噴出動作中變更基板9之轉速的情況下，第二噴出動作中的基板9之轉速係設為比在第一噴出動作中噴嘴部31被配置於最外位置之內側附近時的轉速更高。藉此，在第二噴出動作中，能夠抑制已噴出至外周緣部93的蝕刻液朝向內側擴展。結果，即便是在基板9之外周緣部93的附近，仍能夠實現使蝕刻量隨著轉向外側而增大或均等等蝕刻量較佳的輪廓。When the rotation speed of the
如圖9所示，在變更蝕刻液之噴出流量的情況下，徑向上的噴嘴部31之位置越接近最外位置P2則蝕刻液之噴出流量就變越高。換言之，蝕刻液之噴出流量係隨著噴嘴部31從中央位置P1轉向最外位置P2而逐漸變高，且隨著從最外位置P2轉向中央位置P1而逐漸變低。蝕刻液之噴出流量越高則相對於與上表面91中的蝕刻液之噴出位置(徑向之位置)的蝕刻液之供給量就變越多。結果，可使藉由蝕刻液所致的膜911之蝕刻量(亦即，藉由處理液所為的處理之程度)隨著從基板9之中央部附近轉向外周緣部93附近而增大或均等。當然，蝕刻液之噴出流量的變化係不限定於線性，亦可為非線性。又，蝕刻液之噴出流量亦可如圖9中之二點鏈線所示地變化成階梯狀。在此情況下，亦可謂噴嘴部31之位置越接近最外位置P2則蝕刻液之噴出流量就越高。As shown in FIG. 9, when the ejection flow rate of the etching liquid is changed, the closer the position of the
在第一噴出動作中變更蝕刻液之噴出流量的情況下，第二噴出動作中的蝕刻液之噴出流量係設為比在第一噴出動作中噴嘴部31被配置於最外位置之內側附近時的噴出流量更低。藉此，在第二噴出動作中，能夠抑制已噴出至外周緣部93的蝕刻液朝向內側擴展。結果，即便是在基板9之外周緣部93的附近，仍能夠實現使蝕刻量隨著轉向外側而增大或均等等蝕刻量較佳的輪廓。在第一噴出動作中，噴嘴部31之移動速度、基板9之轉速以及蝕刻液之噴出流量當中兩個以上亦可對應於徑向上的噴嘴部31之位置而變更。When the ejection flow rate of the etching liquid is changed in the first ejection operation, the ejection flow rate of the etching liquid in the second ejection operation is set to be higher than when the
圖10係顯示附加於基板處理裝置1的處理條件取得部7之構成的圖。處理條件取得部7例如是包含CPU等的電腦且具備特徵向量(feature vector)算出部71、判定部72、學習部(機械學習部)73、以及(已記憶於記憶部的)資料庫(database)74。在處理條件取得部7中係輸入處理對象之基板9中的後述之厚度資訊，藉此自動地取得用以獲得蝕刻量之較佳輪廓的第一噴出動作以及第二噴出動作之處理條件。特徵向量算出部71、判定部72以及學習部73例如能藉由預定之程式(program)的執行所實現。處理條件取得部7之全部或一部分亦可藉由專用的電子電路所實現。又，處理條件取得部7亦可藉由與控制部10相同的電腦所實現。FIG. 10 is a diagram showing the configuration of the processing
圖11係顯示建構判定部72的處理之流程的圖。在處理條件取得部7中係建構有判定部72作為處理條件之取得的事前準備。在判定部72之建構中，首先準備在上表面91設置有膜911的複數個基板9(為了與後述的處理對象之基板9做區別，以下稱為「參照基板9」)。接著，對複數個參照基板9之各個參照基板9使用外部之膜厚測量裝置來取得膜911之厚度的輪廓。在以下之說明中係將膜911之厚度的輪廓稱為「厚度資訊」。再者，膜厚測量裝置亦可設置於基板處理裝置1。FIG. 11 is a diagram showing the flow of processing performed by the
當取得厚度資訊時會對複數個參照基板9進行圖4之基板處理。此時，複數個參照基板9係以互為不同的處理條件進行第一噴出動作以及第二噴出動作。處理條件例如包含腔室內之溫度以及濕度、整體逐次處理或部分逐次處理之選擇、第一噴出動作中的參照基板9之轉速、時間、噴出流量以及噴嘴部31之移動速度、以及第二噴出動作中的參照基板9之轉速、時間、噴出流量以及噴嘴部31之位置(最外位置)等。在基板處理裝置1包含複數個腔室的情況下，腔室之識別編號亦可包含於處理條件中。When the thickness information is obtained, the substrate processing shown in FIG. 4 is performed on a plurality of
當相對於複數個參照基板9的基板處理完成時，可取得相對於各個參照基板9的膜911之蝕刻結果。蝕刻結果例如包含蝕刻後的膜911之厚度的輪廓(或蝕刻量的輪廓)、以及作業員已對該輪廓進行判定後的良否之標籤(label)。藉由以上的處理而準備顯示複數個參照基板中的膜911之厚度資訊(蝕刻前的膜911之厚度資訊)、處理條件以及蝕刻結果的教師資料 (步驟S21)。When the substrate processing with respect to the plurality of
教師資料係輸入至學習部73。學習部73係從教師資料中所包含之相對於各個參照基板9的膜911之厚度資訊來算出複數個特徵量。例如，複數個特徵量是蝕刻前的膜911之厚度的輪廓中的徑向之複數個位置上的斜率。複數個特徵量之算出亦可在特徵向量算出部71中進行。在學習部73中係處理複數個特徵量之集合作為特徵向量。接著，學習部73係使用複數個參照基板9中的特徵向量、處理條件以及蝕刻結果(亦即，教師資料)，並使利用神經網路(neural network)等的分類器(classifier)(包含人工智慧(AI：Artificial Intelligence))進行學習，藉此建構判定部72(步驟S22)。在此，判定部72之建構係包含神經網路等中的參數(parameter)之值的決定。判定部72係藉由特徵向量之輸入而輸出獲得被判定為良的蝕刻後的厚度之輪廓的預定之處理條件。教師資料係包含且記憶於資料庫74中。The teacher information is input to the
圖12係顯示對處理對象之基板9取得處理條件的處理之流程的圖。在取得處理條件時，首先對處理對象之基板9使用膜厚測量裝置來取得膜911之厚度資訊(步驟S31)。如已述般，膜厚測量裝置亦可設置於基板處理裝置1。膜911之厚度資訊係輸入至特徵向量算出部71且與判定部72之建構時同樣地取得特徵向量。然後，藉由該特徵向量輸入至判定部72來輸出相對於處理對象之基板9的處理條件。如此，在判定部72中係能使用膜911之厚度資訊來取得處理條件(步驟S32)。處理條件之一例係顯示應使用的腔室之識別編號、整體逐次處理或部分逐次處理之選擇、第二噴出動作中的基板9之轉速以及噴嘴部31之位置(最外位置)等。在基板處理裝置1中係按照所取得的處理條件來進行圖4之基板處理。在已進行該基板處理後的基板9中係可得到被判定為良的蝕刻後之厚度的輪廓(或是蝕刻量之輪廓)。FIG. 12 is a diagram showing the flow of processing for obtaining processing conditions for the
藉由處理條件取得部7所取得的處理條件例如是僅包含第二噴出動作中的基板9之轉速以及時間、或者第二噴出動作中的噴出流量以及時間，其他的條件亦可為事先所決定的固定值。較佳為，藉由處理條件取得部7所取得的處理條件係包含第一噴出動作以及第二噴出動作之各個噴出動作中的基板9之轉速以及時間、或者第一噴出動作以及第二噴出動作之各個噴出動作中的噴出流量以及時間。The processing conditions acquired by the processing
再者，在基板處理裝置1之腔室內亦可設置有攝像部，從基板9之拍攝影像所求出的特徵量亦可包含於特徵向量中(在教師資料中同樣)。又，判定部72、學習部73以及資料庫74(圖10中之虛線所包圍的構成)亦可在外部之伺服器(server)中實現。在此情況下，顯示複數個參照基板9中的膜911之厚度資訊(或特徵向量)、處理條件以及蝕刻結果的教師資料係經由通信部往該伺服器發送而建構判定部72。在對處理對象之基板9取得處理條件時，在特徵向量算出部71所求出的特徵向量(或膜911之厚度資訊)係經由通信部往該伺服器發送。在判定部72中係使用特徵向量來取得處理條件且經由通信部輸入至控制部10。藉此，可進行按照該處理條件所為的基板9之處理。在上述之情況中，該伺服器亦被視為基板處理裝置1之一部分。又，對處理對象之基板9所取得的資料亦可追加於教師資料中而更新判定部72。更且，亦可依每一膜911之種類、或基板9之尺寸而準備判定部72以及資料庫74等。Furthermore, an imaging unit may be provided in the chamber of the
在上述基板處理裝置1中係可進行多種的變化。Various changes can be made in the
藉由對基板9所要求的處理之精度，在第一噴出動作中，噴嘴部31不一定需要在中央位置與最外位置之間移動，例如噴嘴部31亦可在中央位置與比最外位置更靠內側的位置之間移動。又，在第一噴出動作中，亦可從已在中央位置停止的噴嘴部31對所旋轉的基板9之上表面91噴出蝕刻液。With the processing accuracy required for the
在基板處理裝置1中，除了蝕刻液以外，亦可使用使膜911變質的藥液等其他種類的處理液。在此情況下，亦可藉由第二噴出動作中的基板9之轉速比第一噴出動作中的轉速更高，或／及第二噴出動作中的處理液之噴出流量比第一噴出動作中的噴出流量更低，來將藉由處理液對外周緣部93追加的處理限定在較窄的範圍內進行。又，藉由已配置於最外位置的噴嘴部31對比基板9之外周端面94更靠內側的區域噴出處理液，藉此能夠抑制基板9之外周端面94中的處理液之濺起。In the
藉由噴嘴移動機構5之設計，噴嘴部31亦可從圖13中以實線所示的最外位置通過中央位置而移動至以二點鏈線所示的最外位置(與實線之最外位置相同的徑向之位置)為止。在此情況下，亦與圖2之例同樣，可視為噴嘴部31係在中央位置與最外位置之間移動。With the design of the
在基板處理裝置1中進行處理的基板係不限定於半導體基板，亦可為玻璃基板或其他的基板。The substrate to be processed in the
上述實施形態以及各個變化例中的構成係只要不相互矛盾就可做適當組合。The configurations in the above-mentioned embodiments and the respective modification examples can be appropriately combined as long as they do not contradict each other.
雖然已詳細描述並說明發明但是已述的說明為例示而非為限定。可謂只要在不脫離本發明之範圍就可有多數的變化或態樣。Although the invention has been described and illustrated in detail, the described description is illustrative rather than limiting. It can be said that many changes or aspects are possible as long as they do not depart from the scope of the present invention.
1:基板處理裝置
3:處理液供給部
4:沖洗液供給部
5:噴嘴移動機構
7:處理條件取得部
9:基板
10:控制部
21:基板保持部
22:基板旋轉機構
23:杯體
31:噴嘴部
32:處理液供給源
33:流量控制閥
34,44:開閉閥
42:沖洗液供給源
51:手臂
71:特徵向量算出部
72:判定部
73:學習部(機械學習部)
74:資料庫
81:蝕刻液
91:(基板之)上表面(主面)
93:(基板之)外周緣部
94:(基板之)外周端面
211:基底部
212:夾持銷
221:軸部
231:杯體上部
911:膜
J1:中心軸
J2:旋轉軸
L0,L1,L2:輪廓
P1:中央位置
P2:最外位置1: Substrate processing equipment
3: Processing liquid supply part
4: Washing fluid supply part
5: Nozzle moving mechanism
7: Processing condition acquisition department
9: substrate
10: Control Department
21: Board holding part
22: Substrate rotation mechanism
23: Cup body
31: Nozzle part
32: Treatment liquid supply source
33:
[圖1]係顯示基板處理裝置之構成的圖。 [圖2]係用以說明噴嘴移動機構之動作的圖。 [圖3]係顯示基板之外周緣部附近的圖。 [圖4]係顯示處理基板之流程的圖。 [圖5]係顯示徑向上的噴嘴部之位置與噴嘴部之移動速度之關係的圖。 [圖6]係顯示藉由比較例之基板處理所取得的蝕刻量之輪廓(profile)的圖。 [圖7]係顯示蝕刻量之輪廓的圖。 [圖8]係顯示徑向上的噴嘴部之位置與基板之轉速之關係的圖。 [圖9]係顯示徑向上的噴嘴部之位置與噴嘴部之噴出流量之關係的圖。 [圖10]係顯示處理條件取得部之構成的圖。 [圖11]係顯示建構判定部的處理之流程的圖。 [圖12]係顯示取得處理條件的處理之流程的圖。 [圖13]係顯示噴嘴移動機構的動作之另一例的圖。[Fig. 1] A diagram showing the structure of a substrate processing apparatus. [Fig. 2] A diagram for explaining the operation of the nozzle moving mechanism. [Fig. 3] A diagram showing the vicinity of the outer peripheral edge of the substrate. [Fig. 4] is a diagram showing the flow of processing a substrate. [Fig. 5] A diagram showing the relationship between the position of the nozzle portion in the radial direction and the moving speed of the nozzle portion. [Fig. 6] is a diagram showing the profile of the etching amount obtained by the substrate processing of the comparative example. [Fig. 7] A diagram showing the outline of the etching amount. [Fig. 8] A graph showing the relationship between the position of the nozzle portion in the radial direction and the rotation speed of the substrate. [Fig. 9] A diagram showing the relationship between the position of the nozzle portion in the radial direction and the discharge flow rate of the nozzle portion. [Fig. 10] A diagram showing the structure of a processing condition acquisition unit. [FIG. 11] A diagram showing the flow of processing by the construction determination unit. [Fig. 12] is a diagram showing the flow of processing for acquiring processing conditions. Fig. 13 is a diagram showing another example of the operation of the nozzle moving mechanism.
9:基板 9: substrate
23:杯體 23: Cup body
31:噴嘴部 31: Nozzle part
81:蝕刻液 81: etching solution
91:(基板之)上表面(主面) 91: (of the substrate) upper surface (main surface)
93:(基板之)外周緣部 93: (of the substrate) outer peripheral edge
94:(基板之)外周端面 94: (of the substrate) outer peripheral end surface
231:杯體上部 231: The upper part of the cup
911:膜 911: Membrane
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- 2019-10-07 WO PCT/JP2019/039520 patent/WO2020095598A1/en active Application Filing
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Also Published As
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| CN112997279A (en) | 2021-06-18 |
| JP2020077735A (en) | 2020-05-21 |
| KR102609673B1 (en) | 2023-12-04 |
| KR20210066897A (en) | 2021-06-07 |
| JP7088810B2 (en) | 2022-06-21 |
| KR102572925B1 (en) | 2023-08-30 |
| TW202025280A (en) | 2020-07-01 |
| KR20230129580A (en) | 2023-09-08 |
| WO2020095598A1 (en) | 2020-05-14 |
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