TW201836049A - Substrate processing device and substrate processing method - Google Patents
Substrate processing device and substrate processing method Download PDFInfo
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- TW201836049A TW201836049A TW107103444A TW107103444A TW201836049A TW 201836049 A TW201836049 A TW 201836049A TW 107103444 A TW107103444 A TW 107103444A TW 107103444 A TW107103444 A TW 107103444A TW 201836049 A TW201836049 A TW 201836049A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明係有關於一種基板處理裝置以及基板處理方法。成為處理對象之基板係包括例如半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、FED(Field Emission Display;場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板、太陽電池用基板等。 The present invention relates to a substrate processing apparatus and a substrate processing method. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and disks for optical magnetic disks. Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.
在半導體裝置或液晶顯示裝置等製造步驟中,對半導體晶圓或液晶顯示裝置用玻璃基板等基板的外周部進行使用了處理液的處理。用以逐片處理基板之葉片式的基板處理裝置(參照下述專利文獻1)係例如具備有:自轉夾具(spin chuck),係水平地保持基板並使基板旋轉;以及處理液噴嘴,係朝被自轉夾具保持的基板的上表面外周部噴出處理液。 In manufacturing steps such as a semiconductor device or a liquid crystal display device, the outer peripheral portion of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is processed using a processing liquid. A blade type substrate processing apparatus (refer to the following Patent Document 1) for processing substrates one by one is provided with, for example, a spin chuck for horizontally holding and rotating the substrate, and a processing liquid nozzle for the substrate. A processing liquid is ejected from the outer peripheral portion of the upper surface of the substrate held by the rotation jig.
在此種基板處理裝置中,一邊使基板旋轉一邊朝基板的上表面的外周部中的預定的著液位置噴出處理液。已供給至著液位置的處理液係伴隨著基板的旋轉而於基板的周方向的全域擴展,藉此於基板的上表面的外周部形成有具有預定寬度之環狀的處理液。 In such a substrate processing apparatus, the processing liquid is ejected toward a predetermined liquid injection position in the outer peripheral portion of the upper surface of the substrate while the substrate is rotated. The processing liquid that has been supplied to the landing position expands globally in the circumferential direction of the substrate along with the rotation of the substrate, thereby forming an annular processing liquid having a predetermined width on the outer peripheral portion of the upper surface of the substrate.
此外,在針對基板的外周部之處理(以下稱為「外周部 處理」)中,由於使基板繞著旋轉軸線旋轉,因此當基板相對於自轉夾具偏心時,基板的周端中之配置有處理液噴嘴之周方向位置的周端(以下稱為「配置位置周端」)與旋轉軸線之間的距離會因應基板的旋轉角度而變化。在處理液噴嘴相對於自轉夾具處於靜止姿勢時,基板的上表面中之來自處理液噴嘴的處理液的著液位置與配置位置周端之間的距離會伴隨著基板的旋轉而變化。在此情形中,無法在外周部處理步驟中高度地保有基板的外周部中的處理寬度的均勻性。 In addition, in the processing for the outer peripheral portion of the substrate (hereinafter referred to as "outer peripheral processing"), the substrate is rotated about the rotation axis. Therefore, when the substrate is eccentric with respect to the rotation jig, a processing liquid nozzle is disposed on the peripheral end of the substrate. The distance between the peripheral end of the position in the circumferential direction (hereinafter referred to as the "arrangement position peripheral end") and the rotation axis varies depending on the rotation angle of the substrate. When the processing liquid nozzle is at a rest position with respect to the rotation jig, the distance between the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position in the upper surface of the substrate changes as the substrate rotates. In this case, the uniformity of the processing width in the outer peripheral portion of the substrate cannot be highly maintained in the outer peripheral portion processing step.
為了使基板的外周部中的處理寬度的均勻性提升,思考於將基板保持於自轉夾具後使用定中心(centering)機構使基板於水平方向移動並進行中心對準。然而,即使設置定中心機構亦無法完全地將偏心設為零。此外,需要在保持基板後另外確保用來中心對準的時間,會有產量(throughput)惡化之虞。 In order to improve the uniformity of the processing width in the peripheral portion of the substrate, it is thought to use a centering mechanism to move the substrate in the horizontal direction and perform center alignment after holding the substrate in a rotation jig. However, even if a centering mechanism is provided, the eccentricity cannot be completely set to zero. In addition, it is necessary to additionally secure a time for center alignment after the substrate is held, which may result in deterioration in throughput.
於下述專利文獻2揭示有一種基板處理裝置,係以伴隨著基板的旋轉而追隨配置位置周端的旋轉半徑方向位置的變化之方式使處理液噴嘴於旋轉半徑方向往復移動。用以驅動處理液噴嘴之驅動單元係藉由來自基板處理裝置的控制裝置之驅動訊號的輸入而驅動。下述專利文獻2的基板處理裝置的控制裝置係一邊計測配置位置周端的旋轉半徑方向位置,一邊輸出依據該計測結果以處理液噴嘴追隨配置位置周端的旋轉半徑方向位置的變化之方式所作成的噴嘴驅動訊號(反饋控制)。 The following Patent Document 2 discloses a substrate processing apparatus that reciprocates a processing liquid nozzle in a rotation radius direction so as to follow a change in the position in the rotation radius direction at the peripheral end of the placement position as the substrate rotates. The driving unit for driving the processing liquid nozzle is driven by an input of a driving signal from a control device of the substrate processing apparatus. The control device of the substrate processing apparatus of the following Patent Document 2 measures the position in the radial direction of rotation at the peripheral end of the placement position, and outputs the processing liquid nozzle to follow the change in the position in the radius of rotation of the peripheral position of the placement position based on the measurement result. Nozzle drive signal (feedback control).
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Literature]
專利文獻1:美國專利公開第2011/281376A1號公報。 Patent Document 1: U.S. Patent Publication No. 2011 / 281376A1.
專利文獻2:日本特開2016-207895號公報。 Patent Document 2: Japanese Patent Application Laid-Open No. 2016-207895.
然而,在專利文獻1般的構成中,當處理時的基板的旋轉速度(處理旋轉速度)慢時,由於基板的旋轉所致使之離心力弱,因此會有已著液至著液位置的處理液在著液位置中膨脹而於基板的內側擴展之虞。在此情形中,會有在基板的外周部中被處理液所處理之區域的寬度(以下稱為「處理寬度」)變得比預期的寬大還大之虞。亦即,當處理旋轉速度慢時,會有無法精密地控制處理寬度之虞,而謀求不論處理旋轉速度為何皆能精密地控制基板的外周部中的處理寬度。 However, in the general configuration of Patent Document 1, when the rotation speed (processing rotation speed) of the substrate during processing is slow, the centrifugal force caused by the rotation of the substrate is weak, so there is a processing liquid that has been deposited to the deposition position. It may swell in the liquid-impacting position and expand inside the substrate. In this case, there is a possibility that the width (hereinafter referred to as the "processing width") of the region processed by the processing liquid in the outer peripheral portion of the substrate becomes larger than the expected width. That is, when the processing rotation speed is slow, there is a possibility that the processing width cannot be precisely controlled, and the processing width in the outer peripheral portion of the substrate can be precisely controlled regardless of the processing rotation speed.
因此,本發明的目的在於提供一種不受到基板的處理旋轉速度影響皆能精密地控制基板的外周部中的處理寬度之基板處理裝置以及基板處理方法。 Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of precisely controlling a processing width in a peripheral portion of a substrate without being affected by a processing rotation speed of the substrate.
本發明提供一種基板處理方法,係包含有:基板旋轉步驟,係使周端的至少一部分作成圓弧狀的基板以預定處理旋轉速度繞著通過前述基板的中央部之旋轉軸線旋轉;處理液噴出步驟,係與前述基板旋轉步驟並行,從前述處理液噴嘴 朝前述基板的外周部噴出處理液;以及位置調整步驟,係與前述基板旋轉步驟以及前述處理液噴出步驟並行,將正著液至前述著液位置之處理液的著液位置以及/或者內周端的位置調整至與前述處理旋轉速度對應之位置。 The present invention provides a substrate processing method, comprising: a substrate rotation step of rotating a substrate having at least a part of a peripheral end into a circular arc shape at a predetermined processing rotation speed around a rotation axis passing through a central portion of the substrate; and a processing liquid ejection step In parallel with the substrate rotation step, the processing liquid is sprayed from the processing liquid nozzle toward the outer peripheral portion of the substrate; and the position adjustment step is performed in parallel with the substrate rotation step and the processing liquid ejection step, and the liquid is directly injected to the substrate. The liquid injection position of the processing liquid and / or the position of the inner peripheral end is adjusted to a position corresponding to the processing rotation speed.
依據此方法,能將正著液至著液位置之處理液的著液位置以及/或者內周端的位置調整至與處理旋轉速度對應之位置。亦能藉由調整處理液的內周端的位置而將正著液至著液位置之處理液的寬度(以下稱為「著液位置液體寬度」)調整至適合處理旋轉速度之寬度,在此情形中,不論基板的旋轉速度為何皆能精密地控制著液位置液體寬度。 According to this method, it is possible to adjust the liquid injection position and / or the position of the inner peripheral end of the processing liquid that has been impacted to the liquid injection position to a position corresponding to the processing rotation speed. By adjusting the position of the inner peripheral end of the processing liquid, it is possible to adjust the width of the processing liquid from the liquid injection position to the liquid injection position (hereinafter referred to as the "liquid position liquid width") to a width suitable for the processing rotation speed. In this case, In addition, the width of the liquid position can be precisely controlled regardless of the rotation speed of the substrate.
藉由上述,能不受基板的旋轉速度影響而精密地控制基板的外周部中的處理寬度。 As described above, the processing width in the outer peripheral portion of the substrate can be precisely controlled without being affected by the rotation speed of the substrate.
在本發明的實施形態之一中,前述位置調整步驟係包含有:內周端位置調整步驟,係控制前述基板中之處理液的著液位置以及/或者從該處理液噴嘴噴出的處理液的噴出流量,並將正著液至前述著液位置之處理液的內周端的位置調整至與前述處理旋轉速度對應之位置。 In one embodiment of the present invention, the position adjustment step includes an inner peripheral end position adjustment step for controlling a liquid injection position of the processing liquid in the substrate and / or a processing liquid ejected from the processing liquid nozzle. The flow rate is ejected, and the position of the inner peripheral end of the processing liquid that has been impacted to the aforementioned impacting position is adjusted to a position corresponding to the processing rotation speed.
依據此方法,因應基板的處理旋轉速度調整基板中之處理液的著液位置以及/或者從該處理液噴嘴噴出的處理液的噴出流量。藉此,能將著液處理液的內周端的位置調整至與處理旋轉速度(處理時的基板的旋轉速度)對應的位置。 According to this method, the liquid injection position of the processing liquid in the substrate and / or the discharge flow rate of the processing liquid sprayed from the processing liquid nozzle is adjusted according to the processing rotation speed of the substrate. Thereby, the position of the inner peripheral end of the liquid injecting processing liquid can be adjusted to a position corresponding to the processing rotation speed (the rotation speed of the substrate during processing).
亦能藉由調整著液處理液的內周端的位置而將著液位置液體寬度調整至已適合處理旋轉速度之寬度,在此情形 中,不論基板的旋轉速度為何皆能精密地控制著液位置液體寬度。 It is also possible to adjust the liquid width of the landing position liquid to a width suitable for processing the rotation speed by adjusting the position of the inner peripheral end of the liquid landing treatment liquid. In this case, the liquid position can be precisely controlled regardless of the rotation speed of the substrate. Liquid width.
藉由上述,能不受基板的旋轉速度影響而精密地控制基板的外周部中的處理寬度。 As described above, the processing width in the outer peripheral portion of the substrate can be precisely controlled without being affected by the rotation speed of the substrate.
前述內周端位置調整步驟亦可包含有用以調整前述處理液的著液位置之步驟。 The step of adjusting the position of the inner peripheral end may include a step of adjusting a liquid injection position of the processing liquid.
依據此方法,變更基板中之處理液的著液位置,藉此將著液處理液的內周端的位置調整至與處理旋轉速度對應之位置。處理液的著液位置係直接性地作用至著液處理液的內周端的位置,並對該著液處理液的內周端的位置造成大的影響。因此,能藉由變更處理液的著液位置而使著液處理液的內周端的位置更有效果地變更。在此情形中,亦能更精密地控制著液位置液體寬度。 According to this method, the liquid injection position of the processing liquid in the substrate is changed, thereby adjusting the position of the inner peripheral end of the liquid processing liquid to a position corresponding to the processing rotation speed. The liquid injection position of the treatment liquid directly acts on the position of the inner peripheral end of the liquid injection treatment liquid, and greatly affects the position of the inner peripheral end of the liquid injection treatment liquid. Therefore, the position of the inner peripheral end of the liquid-injection treatment liquid can be changed more effectively by changing the liquid-injection position of the treatment liquid. In this case, the liquid width at the liquid position can be controlled more precisely.
此外,前述基板處理方法亦可進一步包含有:各周端位置計測步驟,係藉由各周端位置計測單元計測被基板保持單元保持之基板的周方向的各周端位置,該基板保持單元係不支撐前述基板的外周部而是支撐該基板的中央部並保持該基板;以及著液位置往復移動步驟,係以前述基板的外周部中之來自前述處理液噴嘴的處理液的著液位置追隨前述基板的周端中之配置有該處理液噴嘴之屬於周方向位置的周端之配置位置周端的位置變化而往復移動之方式驅動前述處理液噴嘴。在此情形中,前述內周端位置調整步驟亦可與前述著液位置往復移動步驟並行地執行。 In addition, the aforementioned substrate processing method may further include: each peripheral end position measuring step, which measures each peripheral end position of the substrate held by the substrate holding unit in the circumferential direction by each peripheral end position measuring unit, and the substrate holding unit is Not supporting the outer peripheral portion of the substrate, but supporting the center portion of the substrate and holding the substrate; and the reciprocating position of the liquid injection position follows the liquid injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate to follow The position of the peripheral end of the peripheral end of the substrate where the processing liquid nozzle is disposed is a position of the peripheral end of the peripheral direction. The position of the peripheral end changes and reciprocates to drive the processing liquid nozzle. In this case, the step of adjusting the position of the inner peripheral end may also be performed in parallel with the step of reciprocating the liquid-injection position.
依據此方法,能一邊將著液處理液的內周端的位置調 整至與處理旋轉速度對應之位置,並使處理液的著液位置追隨配置位置周端的位置變化。藉此,能不受處理液的著液位置的往復移動影響而高度地保有基板的外周部中的處理寬度的均勻性。 According to this method, it is possible to adjust the position of the inner peripheral end of the liquid injecting treatment liquid to a position corresponding to the processing rotational speed while making the position of the liquid injecting of the processing liquid follow the position of the peripheral end of the placement position. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be highly maintained without being affected by the reciprocating movement of the liquid injection position of the processing liquid.
此外,前述內周端位置調整步驟亦可包含有用以調整前述處理液的噴出流量之噴出流量調整步驟。 In addition, the step of adjusting the position of the inner peripheral end may include a discharge flow rate adjusting step for adjusting a discharge flow rate of the processing liquid.
依據此方法,調整基板中之處理液的噴出流量,藉此將著液處理液的內周端的位置調整至與處理旋轉速度對應之位置。在此情形中,亦能更精密地控制著液位置液體寬度。 According to this method, the discharge flow rate of the processing liquid in the substrate is adjusted, thereby adjusting the position of the inner peripheral end of the liquid processing liquid to a position corresponding to the processing rotation speed. In this case, the liquid width at the liquid position can be controlled more precisely.
此外,前述基板處理方法亦可進一步包含有:各周端位置計測步驟,係計測被基板保持單元保持之基板的周方向的各周端位置,該基板保持單元係不支撐前述基板的外周部而是支撐該基板的中央部並保持該基板;以及著液位置往復移動步驟,係以前述基板的外周部中之來自前述處理液噴嘴的處理液的著液位置追隨前述基板的周端中之配置有該處理液噴嘴之屬於周方向位置的周端之配置位置周端的位置變化而往復移動之方式驅動前述處理液噴嘴。在此情形中,前述內周端位置調整步驟亦可進一步包含有下述步驟:以前述著液位置液體寬度的內周端追隨配置有該處理液噴嘴之屬於周方向位置的周端之配置位置周端的位置變化而往復移動之方式調整正著液至著液位置之處理液的內周端的位置。 In addition, the substrate processing method may further include: each peripheral end position measuring step, which measures each peripheral end position in the circumferential direction of the substrate held by the substrate holding unit, which does not support the outer peripheral portion of the substrate and Is to support the central portion of the substrate and to hold the substrate; and the reciprocating position of the liquid-injection position is to follow the liquid-injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate to the peripheral end of the substrate where The arrangement position of the peripheral end of the processing liquid nozzle which belongs to the circumferential direction position changes the position of the peripheral end and reciprocates to drive the processing liquid nozzle. In this case, the step of adjusting the position of the inner peripheral end may further include the following step: the inner peripheral end of the liquid width of the liquid injecting position follows the position of the peripheral end of the peripheral position in which the processing liquid nozzle is disposed. The position of the peripheral end is changed and reciprocated to adjust the position of the inner peripheral end of the processing liquid that has been impacted to the impact position.
依據此方法,調整處理液的噴出流量,藉此能使正著 液至著液位置之處理液的內周端追隨配置位置周端的位置變化而往復移動。藉此,能不受處理液的著液位置的往復移動影響而高度地保有基板的外周部中的處理寬度的均勻性。 According to this method, the ejection flow rate of the treatment liquid is adjusted, so that the inner peripheral end of the treatment liquid from the landing position to the landing position can be reciprocated in accordance with the position change of the peripheral position of the placement position. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be highly maintained without being affected by the reciprocating movement of the liquid injection position of the processing liquid.
此外,前述內周端位置調整步驟亦可不在前述處理旋轉速度為預先設定的速度以上之情形中被執行,而是於前述處理旋轉速度未滿預先設定的速度之情形中被執行。 In addition, the step of adjusting the position of the inner peripheral end may not be performed when the processing rotation speed is equal to or higher than a preset speed, but may be performed when the processing rotation speed is less than a preset speed.
在處理旋轉速度慢之情形中,會有已著液至著液位置的處理液在著液位置中膨脹而有於基板的內側擴展之虞。另一方面,在處理旋轉速度快之情形中,不會有已著液至著液位置的處理液在基板的內側擴展之虞。 In the case where the processing rotation speed is slow, there is a possibility that the processing liquid that has been wetted to the wetted position expands in the wetted position and may spread inside the substrate. On the other hand, in the case where the processing rotation speed is fast, there is no possibility that the processing liquid that has been deposited to the deposition position spreads inside the substrate.
依據此方法,僅在會有已著液至著液位置的處理液在基板的內側擴展之虞的處理旋轉速度慢之情形中執行內周端位置調整步驟。亦即,能僅在必要時執行內周端位置調整步驟。 According to this method, the inner peripheral end position adjustment step is performed only in a case where the processing rotation speed where there is a possibility that the processing liquid that has been deposited to the deposition position spreads inside the substrate is slow. That is, the inner peripheral end position adjustment step can be performed only when necessary.
在本發明的實施形態之一中,前述位置調整步驟係包含有:氣體噴吹步驟,係與前述基板旋轉步驟以及前述處理液噴出步驟並行,從基板的旋轉半徑方向的內側朝已著液至前述基板中之處理液的著液位置的處理液噴吹氣體;以及內周端位置調整步驟,係與前述氣體噴吹步驟並行,控制前述基板中之氣體的噴吹位置以及/或者從該氣體噴嘴噴吹至前述基板之氣體的噴吹流量,並將正著液至前述著液位置之處理液的內周端的位置調整至與前述處理旋轉速度對應之位置。 In one embodiment of the present invention, the position adjustment step includes a gas injection step, which is in parallel with the substrate rotation step and the processing liquid ejection step, and the liquid is injected from the inner side of the rotation radius direction of the substrate toward the The processing liquid sprays the gas from the liquid injection position of the processing liquid in the substrate; and the inner peripheral end position adjustment step is performed in parallel with the gas spraying step to control the gas spray position and / or from the gas in the substrate. The nozzle injects the flow rate of the gas to the substrate, and adjusts the position of the inner peripheral end of the processing liquid that has been in contact with the liquid injecting position to a position corresponding to the processing rotation speed.
依據此方法,從基板的內側朝已著液至基板的外周部的著液位置之處理液噴吹氣體。著液處理液的內周端的位置係依存於基板的旋轉速度。能因應基板的處理旋轉速度調整基板中之氣體的噴吹區域的位置以及/或者噴吹至基板之氣體的噴吹流量,藉此將著液處理液的內周端的位置調整至與處理旋轉速度(處理時的基板的旋轉速度)對應之位置。 According to this method, a gas is sprayed from the inside of the substrate toward the treatment liquid that has been deposited on the liquid injection position to the outer peripheral portion of the substrate. The position of the inner peripheral end of the deposition treatment liquid depends on the rotation speed of the substrate. The position of the spray area of the gas in the substrate and / or the spray flow rate of the gas sprayed onto the substrate can be adjusted according to the processing rotation speed of the substrate, thereby adjusting the position of the inner peripheral end of the liquid-impregnated processing liquid to the processing rotation speed (Rotation speed of the substrate during processing).
亦能藉由調整著液處理液的內周端的位置而將著液位置液體寬度調整至已適合處理旋轉速度之寬度,在此情形中,不論基板的旋轉速度為何皆能精密地控制著液位置液體寬度。 It is also possible to adjust the liquid width of the landing position liquid to a width suitable for processing the rotation speed by adjusting the position of the inner peripheral end of the liquid landing treatment liquid. In this case, the liquid position can be precisely controlled regardless of the rotation speed of the substrate. Liquid width.
藉由上述,能不受基板的旋轉速度影響而精密地控制基板的外周部中的處理寬度。 As described above, the processing width in the outer peripheral portion of the substrate can be precisely controlled without being affected by the rotation speed of the substrate.
前述內周端位置調整步驟亦可包含有用以調整前述氣體的噴吹區域的位置之步驟。 The step of adjusting the position of the inner peripheral end may include a step of adjusting the position of the spray area of the gas.
依據此方法,變更基板中之氣體的噴吹區域的位置,藉此將著液處理液的內周端的位置調整至與處理旋轉速度對應之位置。氣體的噴吹區域的位置係直接性地作用至著液處理液的內周端的位置,並對該著液處理液的內周端的位置造成大的影響。因此,能藉由變更氣體的噴吹區域的位置而使著液處理液的內周端的位置更有效果地變更。在此情形中,亦能更精密地控制著液位置液體寬度。 According to this method, the position of the spray area of the gas in the substrate is changed, thereby adjusting the position of the inner peripheral end of the liquid treatment liquid to a position corresponding to the processing rotation speed. The position of the spray area of the gas directly acts on the position of the inner peripheral end of the liquid injecting treatment liquid, and greatly affects the position of the inner peripheral end of the liquid injecting treatment liquid. Therefore, the position of the inner peripheral end of the liquid-impregnating treatment liquid can be changed more effectively by changing the position of the spray area of the gas. In this case, the liquid width at the liquid position can be controlled more precisely.
此外,前述內周端位置調整步驟亦可包含有用以調整前述氣體的噴吹流量之氣體流量調整步驟。 In addition, the step of adjusting the position of the inner peripheral end may include a gas flow rate adjusting step for adjusting a spray flow rate of the gas.
依據此方法,調整基板中之氣體的噴吹流量,藉此能將著液處理液的內周端的位置調整至與處理旋轉速度對應之位置。在此情形中,亦能更精密地控制著液位置液體寬度。 According to this method, the spray flow rate of the gas in the substrate is adjusted, whereby the position of the inner peripheral end of the liquid-injection processing liquid can be adjusted to a position corresponding to the processing rotation speed. In this case, the liquid width at the liquid position can be controlled more precisely.
此外,前述內周端位置調整步驟亦可不在前述處理旋轉速度為預先設定的速度以上之情形中被執行,而是於前述處理旋轉速度未滿預先設定的速度之情形中被執行。 In addition, the step of adjusting the position of the inner peripheral end may not be performed when the processing rotation speed is equal to or higher than a preset speed, but may be performed when the processing rotation speed is less than a preset speed.
在處理旋轉速度慢之情形中,會有已著液至著液位置的處理液在著液位置中膨脹而有於基板的內側擴展之虞。另一方面,在處理旋轉速度快之情形中,不會有已著液至著液位置的處理液在基板的內側擴展之虞。 In the case where the processing rotation speed is slow, there is a possibility that the processing liquid that has been wetted to the wetted position expands in the wetted position and may spread inside the substrate. On the other hand, in the case where the processing rotation speed is fast, there is no possibility that the processing liquid that has been deposited to the deposition position spreads inside the substrate.
依據此方法,僅在會有已著液至著液位置的處理液在基板的內側擴展之虞的處理旋轉速度慢之情形中執行內周端位置調整步驟。亦即,能僅在必要時執行內周端位置調整步驟。 According to this method, the inner peripheral end position adjustment step is performed only in a case where the processing rotation speed where there is a possibility that the processing liquid that has been deposited to the deposition position spreads inside the substrate is slow. That is, the inner peripheral end position adjustment step can be performed only when necessary.
前述基板處理方法亦可進一步包含有:各周端位置計測步驟,係計測被基板保持單元保持之基板的周方向的各周端位置,該基板保持單元係不支撐前述基板的外周部而是支撐該基板的中央部並保持該基板。在此情形中,前述內周端位置調整步驟亦可進一步包含有下述步驟:以前述著液位置液體寬度的內周端追隨配置有該處理液噴嘴之屬於周方向位置的周端之配置位置周端的位置變化而往復移動之方式調整正著液至著液位置之處理液的內周端的位置。 The substrate processing method may further include: each peripheral end position measuring step, which measures each peripheral end position in the circumferential direction of the substrate held by the substrate holding unit. The substrate holding unit does not support the outer peripheral portion of the substrate but supports it. A central portion of the substrate holds the substrate. In this case, the step of adjusting the position of the inner peripheral end may further include the following step: the inner peripheral end of the liquid width of the liquid injecting position follows the position of the peripheral end of the peripheral position in which the processing liquid nozzle is disposed. The position of the peripheral end is changed and reciprocated to adjust the position of the inner peripheral end of the processing liquid that has been impacted to the impact position.
依據此方法,調整氣體的噴吹區域的位置以及/或者氣體的噴吹流量,藉此能使正著液至著液位置之處理液的內周端追隨配置位置周端的位置變化而往復移動。藉此,能不受處理液的著液位置的往復移動影響而高度地保有基板的外周部中的處理寬度的均勻性。 According to this method, the position of the spray area of the gas and / or the spray flow rate of the gas can be adjusted, so that the inner peripheral end of the processing liquid from the landing position to the landing position can be reciprocated following the position change of the peripheral position of the placement position. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be highly maintained without being affected by the reciprocating movement of the liquid injection position of the processing liquid.
然而,在專利文獻2所記載的基板處理裝置中之處理液噴嘴的驅動控制中,會有處理液噴嘴的驅動動作相對於來自用以驅動噴嘴之驅動訊號的控制裝置之輸出延遲之情形。由於此種延遲為微量,因此在外周部處理時之基板的旋轉速度慢之情形中,能使基板的外周部中之處理液的著液位置良好地追隨配置位置周端的位置變化。 However, in the driving control of the processing liquid nozzle in the substrate processing apparatus described in Patent Document 2, the driving operation of the processing liquid nozzle may be delayed with respect to the output from the control device for driving the nozzle. Since such a delay is minute, when the rotation speed of the substrate during the processing of the peripheral portion is slow, it is possible to make the position of the liquid injection of the processing liquid in the peripheral portion of the substrate follow the position change at the peripheral edge of the placement position well.
然而,隨著外周部處理時的基板的旋轉速度變快,變得難以使基板的上表面外周部中之處理液的著液位置追隨配置位置周端的位置變化。在此情形中,無法謀求基板的外周部中的處理寬度的均勻性的提升。 However, as the rotation speed of the substrate during processing of the outer peripheral portion becomes faster, it becomes difficult to make the position of the liquid injection of the processing liquid in the outer peripheral portion of the upper surface of the substrate follow the position of the peripheral edge of the arrangement position. In this case, it is not possible to improve the uniformity of the processing width in the outer peripheral portion of the substrate.
此外,在專利文獻1般的構成中,當處理時的基板的旋轉速度(處理旋轉速度)慢時,由於基板的旋轉所致使之離心力弱,因此會有已著液至著液位置的處理液在著液位置中膨脹並於基板的內側擴展之虞。在此情形中,會有在基板的外周部中被處理液處理之區域的寬度(以下稱為「處理寬度」)變得比預期的寬度還大之虞。亦即,當處理旋轉速度慢時,會有無法精密地控制處理寬度之虞。因此,謀求即使處理旋轉速度慢亦能精密地控制基板的外周部中的處理寬度。 In addition, in the general configuration of Patent Document 1, when the rotation speed (processing rotation speed) of the substrate during processing is slow, the centrifugal force caused by the rotation of the substrate is weak, so that there is a processing liquid that has been deposited to the deposition position. It may swell in the liquid injection position and expand inside the substrate. In this case, there is a possibility that the width (hereinafter referred to as the “processing width”) of the region processed by the processing liquid in the outer peripheral portion of the substrate becomes larger than the expected width. That is, when the processing rotation speed is slow, there is a possibility that the processing width cannot be precisely controlled. Therefore, even if the processing rotation speed is slow, the processing width in the outer peripheral portion of the substrate can be precisely controlled.
在本發明的實施形態之一中,包含有:基板保持步驟,係藉由用以支撐基板的中央部並保持前述基板之前述基板保持單元保持周端的至少一部分作成圓弧狀之基板;各周端位置計測步驟,係計測被前述基板保持單元保持之基板的周方向的各周端位置;以及外周部處理步驟,係藉由前述基板旋轉步驟以及前述處理液噴出步驟而實現之步驟,一邊使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉,一邊從前述處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理該主面的外周部。此外,在本發明的實施形態之一中,前述位置調整步驟係包含有:著液位置往復移動步驟,係於前述各周端位置計測步驟之後與前述外周部處理步驟並行,以前述基板的外周部中之來自前述處理液噴嘴的處理液的著液位置追隨前述基板的周端中之配置有該處理液噴嘴之屬於周方向位置的周端之配置位置周端的位置變化而往復移動之方式藉由噴嘴驅動單元驅動前述處理液噴嘴。再者,在本發明的實施形態之一中,前述著液位置往復移動步驟係包含有:噴嘴驅動訊號作成步驟,係依據前述各周端位置計測步驟中的計測結果以及前述外周部處理步驟中的前述基板的旋轉速度,以前述著液位置會以與前述配置位置周端的位置變化相同的振幅以及相同的周期移動之方式作成用以使前述處理液噴嘴驅動之噴嘴驅動訊號;以及驅動訊號輸出步驟,係在排除時序將所作成的前述噴嘴驅動訊號輸出至前述噴嘴驅動單元,前述排除時序係已將相對於前述噴嘴驅動訊 號的輸出之前述處理液噴嘴的驅動延遲所伴隨之相對於前述配置位置周端的位置變化之前述著液位置的相位差予以排除。 In one embodiment of the present invention, the method includes a substrate holding step of forming a circular-arc-shaped substrate by supporting at least a part of a holding edge of the substrate holding unit for supporting a central portion of the substrate and holding the substrate; The end position measurement step is to measure each peripheral end position in the circumferential direction of the substrate held by the substrate holding unit; and the peripheral processing step is a step realized by the substrate rotation step and the processing liquid ejection step, while using The substrate held by the substrate holding unit is rotated around a rotation axis passing through a central portion of the substrate, and the processing liquid is ejected from the processing liquid nozzle toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the main surface. In addition, in one embodiment of the present invention, the position adjustment step includes a reciprocating step of the liquid-injection position, which is performed in parallel with the outer peripheral portion processing step after each of the peripheral position measurement steps, and the outer periphery of the substrate. The injection position of the processing liquid from the processing liquid nozzle in the section follows the position change of the peripheral position of the peripheral end of the substrate in which the processing liquid nozzle is disposed, and the position of the peripheral end changes back and forth by the nozzle. The driving unit drives the processing liquid nozzle. Furthermore, in one embodiment of the present invention, the step of reciprocating the liquid-injection position includes a step of generating a nozzle driving signal, based on a measurement result in each of the peripheral position measurement steps, and in the aforementioned peripheral processing step. A nozzle driving signal for driving the processing liquid nozzle in a manner such that the liquid-injection position moves with the same amplitude and the same period as the position change at the peripheral end of the disposition position; and the driving signal output; The step is to output the created nozzle driving signal to the nozzle driving unit at the exclusion timing, and the exclusion timing has already been compared with the configuration with the driving delay of the processing liquid nozzle relative to the output of the nozzle driving signal. The phase difference of the above-mentioned liquid-injection position from the position change at the position peripheral end is excluded.
依據此方法,在著液位置往復移動步驟中,以處理液的著液位置會以與配置位置周端的位置變化相同的振幅以及相同的周期移動之方式作成用以使處理液噴嘴驅動之噴嘴驅動訊號。該噴嘴驅動訊號係在已將處理液噴嘴的驅動延遲所伴隨之相位差予以排除之排除時序輸出至噴嘴驅動單元。亦即,在可追隨配置位置周端的位置變化使著液位置往復移動之時序輸出噴嘴驅動訊號。藉此,能不受相對於噴嘴驅動訊號的輸出之處理液噴嘴的驅動延遲之影響地,使處理液的著液位置追隨配置位置周端的位置變化良好地移動。 According to this method, in the step of reciprocating the liquid-injection position, the nozzle-driving for driving the processing-liquid is made in such a manner that the liquid-injecting position of the processing liquid moves with the same amplitude and the same period as the position change at the periphery of the placement position Signal. The nozzle driving signal is output to the nozzle driving unit at the exclusion timing at which the phase difference accompanying the driving delay of the processing liquid nozzle has been excluded. That is, the nozzle driving signal is output at a timing that can follow the position change at the peripheral end of the disposition position and reciprocate the liquid injection position. This makes it possible to move the liquid injection position of the processing liquid well in accordance with the positional change of the peripheral position of the arrangement position without being affected by the driving delay of the processing liquid nozzle with respect to the output of the nozzle driving signal.
前述驅動訊號輸出步驟亦可包含有:時序取得步驟,係從前述著液位置追隨前述配置位置周端的位置變化之最適當的追隨時序錯開達至相當於前述相位差之時間,藉此取得前述排除時序。 The aforementioned driving signal output step may also include: a timing acquisition step, which is the most appropriate tracking from the above-mentioned liquid-injection position to follow the position change at the peripheral end of the above-mentioned configuration position in order to stagger the time sequence to a time equivalent to the aforementioned phase difference, thereby obtaining the aforementioned exclusion Timing.
依據此方法,從基板的外周部中之處理液的著液位置追隨配置位置周端的位置變化之最適當的追隨時序錯開達至相當於相位差之時間,藉此能求出排除時序。在此情形中,能簡單且正確地取得排除時序。 According to this method, the most appropriate tracking from the position of the liquid injection position of the processing liquid in the peripheral portion of the substrate to the position change at the peripheral end of the arrangement position is staggered in time to a time equivalent to the phase difference, thereby obtaining the exclusion timing. In this case, the exclusion timing can be obtained simply and correctly.
前述方法亦可進一步包含有:相位差計測步驟,係在前述著液位置往復移動步驟之前對前述噴嘴驅動單元輸出前述噴嘴驅動訊號並使前述著液位置移動,藉此計測前述 相位差。在此情形中,前述時序取得步驟亦可包含有下述步驟:依據前述相位差取得前述排除時序。 The method may further include a phase difference measurement step of measuring the phase difference by outputting the nozzle driving signal to the nozzle driving unit and moving the liquid injection position before the liquid injection position reciprocating step. In this case, the timing obtaining step may also include the following step: obtaining the excluded timing according to the phase difference.
依據此方法,使處理液噴嘴移動並使用噴嘴移動量檢測單元檢測此時的處理液噴嘴的移動量,藉此能實際地計測相位差。由於依據實際測量的相位差移動處理液噴嘴,因此能使處理液的著液位置的往復移動更良好地追隨配置位置周端的位置變化。 According to this method, the phase difference can be actually measured by moving the processing liquid nozzle and detecting the moving amount of the processing liquid nozzle at this time using the nozzle movement amount detecting unit. Since the processing liquid nozzle is moved based on the actually measured phase difference, the reciprocating movement of the liquid injection position of the processing liquid can better follow the position change at the periphery of the placement position.
此外,前述相位差亦可為預先規定的相位差。 The phase difference may be a predetermined phase difference.
依據此方法,並非依據實測值而是依據預先規定的相位差使處理液噴嘴往復移動。在此情形中,由於無需計測相位差,因此能謀求處理整體的時間的縮短化,藉此可謀求改善產量。 According to this method, the processing liquid nozzle is reciprocated not based on the actual measured value but based on a predetermined phase difference. In this case, since it is not necessary to measure the phase difference, it is possible to shorten the overall processing time, thereby improving the yield.
此外,前述相位差亦可與前述基板的旋轉速度對應地設置有複數個;前述驅動訊號輸出步驟亦可包含有下述步驟:以基於與前述外周部處理步驟中的前述基板的旋轉速度對應之前述相位差之時序輸出前述噴嘴驅動訊號。 In addition, the phase difference may be provided in plural corresponding to the rotation speed of the substrate; the driving signal output step may include the following step: corresponding to the rotation speed of the substrate based on the rotation speed of the substrate in the peripheral processing step. The timing of the phase difference outputs the aforementioned nozzle driving signal.
依據此方法,設置有複數個相位差,各個相位差係與基板的處理旋轉速度對應地設置有複數個。而且,以已排除與處理旋轉速度對應的相位差之排除時序輸出噴嘴驅動訊號。因此,即使在基板處理裝置中以一個基板處理裝置進行旋轉速度彼此不同之複數個外周部處理步驟之情形中,亦能以與各處理旋轉速度對應之最適當的時序輸出噴嘴驅動訊號。 According to this method, a plurality of phase differences are provided, and each phase difference is provided in accordance with the processing rotation speed of the substrate. Further, the nozzle driving signal is output at the exclusion timing at which the phase difference corresponding to the processing rotation speed has been excluded. Therefore, even in a case where the substrate processing apparatus performs a plurality of peripheral processing steps whose rotation speeds are different from each other, the nozzle driving signal can be output at the most appropriate timing corresponding to each processing rotation speed.
前述各周端位置計測步驟亦可包含有下述步驟:一邊 使被前述基板保持單元保持的基板繞著前述旋轉軸線轉動,一邊使用位置感測器計測前述預定的周端位置。 Each of the peripheral position measurement steps may include a step of measuring the predetermined peripheral position using a position sensor while rotating the substrate held by the substrate holding unit around the rotation axis.
依據此方法,一邊使被基板保持單元保持的基板轉動一邊使用位置感測器檢測預定的周端位置,藉此能計測基板的周方向的各周端位置。亦即,能使用位置感測器此種簡單的構成良好地計測基板的周方向的各周端位置。 According to this method, the position of each peripheral end in the circumferential direction of the substrate can be measured by detecting a predetermined peripheral end position using a position sensor while rotating the substrate held by the substrate holding unit. That is, the position of each peripheral end in the circumferential direction of the substrate can be measured well using a simple configuration such as a position sensor.
此外,前述各周端位置計測步驟亦可包含有下述步驟:計測基板的周方向的各周端位置中之相對於前述旋轉軸線屬於旋轉半徑方向位置之各周端徑方向位置作為前述各周端位置。在此情形中,前述著液位置往復移動步驟亦可包含有用以使前述著液位置追隨前述配置位置周端的徑方向位置變化往復移動之步驟。 In addition, each of the peripheral end position measurement steps may include a step of measuring each peripheral end position in a peripheral direction of the substrate in the peripheral direction relative to the rotation axis in the radial position of the rotation axis as the respective peripheral positions.端 位置。 End position. In this case, the step of reciprocating the liquid injection position may include a step of reciprocating the position of the liquid injection position to follow a change in the radial position of the peripheral position of the disposition position.
依據此方法,在著液位置往復移動步驟中,以處理液的著液位置會以與配置位置周端的徑方向位置變化相同的振幅以及相同的周期移動之方式作成用以使處理液噴嘴驅動之噴嘴驅動訊號。該噴嘴驅動訊號係在已將處理液噴嘴的驅動延遲所伴隨之相位差予以排除之排除時序輸出至噴嘴驅動單元。亦即,在可追隨配置位置周端的徑方向位置變化使著液位置往復移動之時序輸出噴嘴驅動訊號。藉此,能不受相對於噴嘴驅動訊號的輸出之處理液噴嘴的驅動延遲之影響地,使處理液的著液位置良好地追隨配置位置周端的徑方向位置變化。 According to this method, in the step of reciprocating the liquid-injection position, the liquid-injection position of the processing liquid is moved with the same amplitude and the same period as the radial position change at the peripheral end of the placement position to drive the processing liquid nozzle Nozzle drive signal. The nozzle driving signal is output to the nozzle driving unit at the exclusion timing at which the phase difference accompanying the driving delay of the processing liquid nozzle has been excluded. That is, the nozzle driving signal is output at a timing when the position of the radial direction can be reciprocated in accordance with the radial position change that can follow the peripheral position of the placement position. This makes it possible to make the liquid injection position of the processing liquid well follow the radial position change of the peripheral position of the arrangement position without being affected by the driving delay of the processing liquid nozzle with respect to the output of the nozzle driving signal.
此外,前述基板旋轉單元亦可包含有下述單元:使被前述基板保持單元保持的基板繞著通過前述基板的中央部之 鉛直軸線旋轉;前述各周端位置計測步驟亦可包含有下步驟:計測基板的周方向的各周端位置中之屬於高度位置的各周端位置高度作為前述各周端位置。在此情形中,前述著液位置往復移動步驟亦可包含有下述步驟:使前述著液位置追隨前述配置位置周端的高度位置變化往復移動。 In addition, the substrate rotating unit may include the following units: a substrate held by the substrate holding unit is rotated around a vertical axis passing through a central portion of the substrate; the steps of measuring the positions of the peripheral ends may include the following steps: Among the peripheral end positions in the circumferential direction of the substrate, the heights of the peripheral end positions belonging to the height positions are measured as the aforementioned peripheral end positions. In this case, the step of reciprocating the liquid-impacting position may include the step of causing the liquid-impacting position to reciprocate in accordance with a change in height of the peripheral position of the configuration position.
依據此方法,在著液位置往復移動步驟中,以處理液的著液位置會以與配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使處理液噴嘴驅動之噴嘴驅動訊號。該噴嘴驅動訊號係在已將處理液噴嘴的驅動延遲所伴隨之相位差予以排除之排除時序輸出至噴嘴驅動單元。亦即,在可追隨配置位置周端的高度位置變化使著液位置往復移動之時序輸出噴嘴驅動訊號。藉此,能不受相對於噴嘴驅動訊號的輸出之處理液噴嘴的驅動延遲之影響地,使處理液的著液位置良好地追隨配置位置周端的高度位置變化。 According to this method, in the reciprocating movement step of the liquid injection position, a nozzle for driving the processing liquid nozzle is made so that the liquid injection position of the processing liquid will move with the same amplitude and the same cycle as the height and position change at the periphery of the placement position. Drive signal. The nozzle driving signal is output to the nozzle driving unit at the exclusion timing at which the phase difference accompanying the driving delay of the processing liquid nozzle has been excluded. That is, the nozzle driving signal is output at the timing of the reciprocating movement of the liquid injection position at a height position change that can follow the peripheral position of the placement position. This makes it possible to make the liquid injection position of the processing liquid follow the height and position change at the peripheral edge of the arrangement position without being affected by the driving delay of the processing liquid nozzle with respect to the output of the nozzle driving signal.
本發明的前述目的、特徵及功效以及其他的目的、特徵及功效係能參照隨附的圖式且藉由下述實施形態的說明而更明瞭。 The foregoing objects, features, and effects of the present invention and other objects, features, and effects can be made clearer with reference to the accompanying drawings and the description of the following embodiments.
1、401、801‧‧‧基板處理裝置 1, 401, 801‧‧‧ substrate processing equipment
2、402、802‧‧‧處理單元 2, 402, 802‧‧‧ processing units
3‧‧‧控制裝置 3‧‧‧control device
4‧‧‧處理腔室 4‧‧‧ treatment chamber
5‧‧‧自轉夾具 5‧‧‧rotation fixture
6、406、806‧‧‧處理液供給單元 6,406,806‧‧‧‧treatment liquid supply unit
8‧‧‧第一惰性氣體供給單元 8‧‧‧The first inert gas supply unit
9‧‧‧第二惰性氣體供給單元 9‧‧‧Second inert gas supply unit
10‧‧‧第三惰性氣體供給單元 10‧‧‧Third inert gas supply unit
11‧‧‧加熱器 11‧‧‧ heater
12‧‧‧處理罩 12‧‧‧ treatment cover
12a‧‧‧上端部 12a‧‧‧upper end
13‧‧‧隔壁 13‧‧‧ next door
14‧‧‧FFU 14‧‧‧FFU
15‧‧‧排氣導管 15‧‧‧Exhaust duct
16‧‧‧自轉軸 16‧‧‧rotation shaft
17‧‧‧自轉基座 17‧‧‧rotation base
17a‧‧‧上表面 17a‧‧‧upper surface
18‧‧‧自轉馬達 18‧‧‧ rotation motor
19、419、819‧‧‧處理液噴嘴 19, 419, 819‧‧‧ treatment liquid nozzle
19a‧‧‧噴出口 19a‧‧‧jet outlet
20‧‧‧噴嘴臂 20‧‧‧ Nozzle Arm
21‧‧‧臂支撐軸 21‧‧‧arm support shaft
22‧‧‧臂搖動馬達 22‧‧‧arm swing motor
22a‧‧‧輸出軸 22a‧‧‧Output shaft
23‧‧‧編碼器 23‧‧‧ Encoder
24、420、820‧‧‧藥液配管 24, 420, 820‧‧‧medicine piping
25、421、821‧‧‧藥液閥 25, 421, 821 ‧ ‧ ‧ liquid medicine valve
26A、422、822‧‧‧清洗液配管 26A, 422, 822‧‧‧ cleaning liquid piping
26B、423、823‧‧‧清洗液閥 26B, 423, 823‧‧‧‧Cleaning liquid valve
27‧‧‧氣體噴出噴嘴 27‧‧‧gas ejection nozzle
28‧‧‧第一氣體配管 28‧‧‧First gas piping
29‧‧‧第一氣體閥 29‧‧‧The first gas valve
30、34、424、824、905‧‧‧噴嘴移動機構 30, 34, 424, 824, 905‧‧‧ nozzle moving mechanism
31‧‧‧上外周部氣體噴嘴 31‧‧‧ Upper peripheral gas nozzle
32‧‧‧第二氣體配管 32‧‧‧Second Gas Piping
33‧‧‧第二氣體閥 33‧‧‧Second Gas Valve
36‧‧‧下外周部氣體噴嘴 36‧‧‧ Lower peripheral gas nozzle
37‧‧‧第三氣體配管 37‧‧‧Third gas piping
38‧‧‧第三氣體閥 38‧‧‧Third Gas Valve
41‧‧‧外周部 41‧‧‧ Peripheral Department
42、43‧‧‧外周區域 42, 43‧‧‧ peripheral area
44‧‧‧周端面 44‧‧‧ week end face
45‧‧‧著液位置 45‧‧‧ landing position
46‧‧‧配置位置周端 46‧‧‧ Configuration peripheral
47‧‧‧徑方向位置感測器 47‧‧‧ Radial Position Sensor
51‧‧‧運算單元 51‧‧‧ Computing Unit
52‧‧‧記憶單元 52‧‧‧Memory unit
53‧‧‧輸出單元 53‧‧‧output unit
54‧‧‧配方記憶部 54‧‧‧ Recipe Memory
55‧‧‧相位差記憶部 55‧‧‧Phase Difference Memory
56‧‧‧移動步驟執行旗標 56‧‧‧ move step execution flag
57‧‧‧噴嘴驅動訊號 57‧‧‧Nozzle drive signal
59‧‧‧各周端徑方向位置記憶部 59‧‧‧Position position memory section at each end
147‧‧‧高度位置感測器 147‧‧‧height position sensor
419a、819a‧‧‧處理液噴出口 419a, 819a ‧‧‧ treatment liquid ejection outlet
455、855‧‧‧資訊記憶部 455, 855‧‧‧ Information and Memory Department
501、502、904‧‧‧流量調整閥 501, 502, 904‧‧‧flow regulating valve
507‧‧‧處理位置對應表 507‧‧‧Processing position correspondence table
607‧‧‧噴出流量對應表 607‧‧‧Ejection flow correspondence table
701、1101‧‧‧內周端 701, 1101‧‧‧ inner periphery
807‧‧‧氣體噴吹單元 807‧‧‧gas injection unit
901‧‧‧氣體噴嘴 901‧‧‧gas nozzle
901a‧‧‧氣體噴出口 901a‧‧‧gas outlet
902‧‧‧氣體配管 902‧‧‧Gas piping
903‧‧‧氣體閥 903‧‧‧Gas valve
906‧‧‧噴吹區域 906‧‧‧Blowing area
907‧‧‧噴吹區域位置對應表 907‧‧‧Spray area position correspondence table
1007‧‧‧噴吹流量對應表 1007‧‧‧Blowing flow correspondence table
A‧‧‧振幅 A‧‧‧amplitude
A1‧‧‧旋轉軸線 A1‧‧‧axis of rotation
A2‧‧‧搖動軸線 A2‧‧‧ Shake axis
C1‧‧‧承載器 C1‧‧‧ Carrier
CR、IR‧‧‧搬運機器人 CR, IR‧‧‧handling robot
H‧‧‧手部 H‧‧‧hand
LP‧‧‧卸載部 LP‧‧‧Unloading Department
P‧‧‧相位 P‧‧‧phase
PD‧‧‧週期 PD‧‧‧ Cycle
R‧‧‧旋轉方向 R‧‧‧ Direction of rotation
RD‧‧‧徑方向 RD‧‧‧direction
SW1、SW2‧‧‧正弦波 SW1, SW2‧‧‧ sine wave
W‧‧‧基板 W‧‧‧ substrate
W1、W11‧‧‧著液位置液體寬度 W1, W11‧‧‧Liquid position liquid width
△P‧‧‧相位差 △ P‧‧‧Phase difference
θ 1、θ 2‧‧‧入射角 θ 1, θ 2‧‧‧ incident angle
圖1係用以說明本發明的第一實施形態的基板處理裝置的內部的布局之示意性的俯視圖。 FIG. 1 is a schematic plan view for explaining an internal layout of a substrate processing apparatus according to a first embodiment of the present invention.
圖2係用以說明前述基板處理裝置所具備的處理單元的構成例之示意性的剖視圖。 FIG. 2 is a schematic cross-sectional view illustrating a configuration example of a processing unit included in the substrate processing apparatus.
圖3係用以顯示正從配置於處理位置的處理液噴嘴噴 出處理液的狀態之剖視圖。 Fig. 3 is a sectional view showing a state in which a processing liquid is being ejected from a processing liquid nozzle arranged at a processing position.
圖4係顯示基板在偏心狀態下被自轉夾具保持的狀態之示意圖。 FIG. 4 is a schematic view showing a state where the substrate is held by the rotation fixture in an eccentric state.
圖5係用以顯示基板在偏心狀態下被自轉夾具保持的狀態之圖。 FIG. 5 is a view showing a state where the substrate is held by the rotation jig in an eccentric state.
圖6係用以顯示參考基板處理例中的基板的上表面的外周區域的處理寬度之俯視圖。 6 is a plan view showing a processing width of an outer peripheral region of an upper surface of a substrate in a reference substrate processing example.
圖7係用以說明前述基板處理裝置的主要部分的電性構成之方塊圖。 FIG. 7 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
圖8係用以顯示配置位置周端的徑方向位置變化之正弦波以及已在追隨時序輸出噴嘴驅動訊號之情形中的著液位置的徑方向位置變化之正弦波。 FIG. 8 is a sine wave showing the change in the radial position of the circumferential position of the placement position and the change in the position of the radial position of the liquid injection position in the case where the nozzle driving signal is output in sequence.
圖9係用以說明圖7所示的各周端徑方向位置記憶部之圖。 FIG. 9 is a diagram for explaining the position memory portions in the radial direction of each peripheral end shown in FIG. 7.
圖10係用以說明圖7所示的相位差記憶部之圖。 FIG. 10 is a diagram for explaining a phase difference memory section shown in FIG. 7.
圖11係用以說明前述處理單元所為之第一基板處理例之流程圖。 FIG. 11 is a flowchart illustrating a first substrate processing example for the aforementioned processing unit.
圖12係用以說明圖11所示的各周端徑方向位置計測步驟的內容之流程圖。 FIG. 12 is a flowchart for explaining the content of the steps of measuring the positions in the circumferential end diameter directions shown in FIG. 11.
圖13係用以說明圖11所示的相位差計測步驟的內容之流程圖。 FIG. 13 is a flowchart for explaining the content of the phase difference measurement procedure shown in FIG. 11.
圖14係用以說明圖11所示的外周部處理步驟的內容之流程圖。 FIG. 14 is a flowchart for explaining the contents of the processing steps of the outer peripheral portion shown in FIG. 11.
圖15係用以說明前述外周部處理步驟的內容之示意 圖。 Fig. 15 is a schematic diagram for explaining the contents of the aforementioned peripheral processing steps.
圖16係用以說明前述外周部處理步驟的內容之示意圖。 FIG. 16 is a schematic diagram for explaining the content of the processing steps of the outer periphery.
圖17係用以顯示配置位置周端的徑方向位置變化之正弦波以及已在排除時序輸出噴嘴驅動訊號之情形中的著液位置的徑方向位置變化之正弦波。 FIG. 17 is a sine wave showing a change in the radial position of the circumferential position of the arrangement position and a change in the position of the radial position of the liquid injection position in a case where the timing of outputting the nozzle drive signal has been excluded.
圖18係用以顯示前述第一基板處理例中的基板的上表面的外周區域的處理寬度之俯視圖。 FIG. 18 is a plan view showing the processing width of the outer peripheral region of the upper surface of the substrate in the first substrate processing example.
圖19係用以說明本發明第二實施形態的基板處理裝置所具備的處理單元的構成例之示意性的圖。 19 is a schematic diagram for explaining a configuration example of a processing unit provided in a substrate processing apparatus according to a second embodiment of the present invention.
圖20係用以顯示正從配置於處理位置的處理液噴嘴噴出處理液的狀態之剖視圖。 FIG. 20 is a cross-sectional view showing a state where a processing liquid is being ejected from a processing liquid nozzle arranged at a processing position.
圖21係用以說明前述基板處理裝置的主要部分的電性構成之方塊圖。 FIG. 21 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
圖22係用以說明記憶於資訊記憶部之旋轉速度-處理位置對應表之圖。 FIG. 22 is a diagram for explaining a rotation speed-processing position correspondence table stored in the information storage unit.
圖23係用以說明藉由前述處理單元所執行之第二基板處理例之流程圖。 FIG. 23 is a flowchart for explaining a second substrate processing example performed by the processing unit.
圖24係用以說明圖23所示的外周部處理步驟的內容之流程圖。 FIG. 24 is a flowchart for explaining the content of the processing steps of the peripheral portion shown in FIG. 23.
圖25係用以示意性地顯示前述外周部處理步驟中的處理液噴嘴的狀態之圖。 FIG. 25 is a view schematically showing a state of a processing liquid nozzle in the aforementioned peripheral processing step.
圖26係用以示意性地顯示前述外周部處理步驟中的處理液噴嘴的狀態之圖。 FIG. 26 is a diagram schematically showing a state of a processing liquid nozzle in the aforementioned peripheral processing step.
圖27係用以說明記憶於資訊記憶部之旋轉速度-噴吹流量對應表之圖。 FIG. 27 is a diagram for explaining a rotation speed-blow flow correspondence table stored in the information storage section.
圖28係用以說明第三實施形態的第三基板處理例的外周部處理步驟的內容之流程圖。 FIG. 28 is a flowchart for explaining the content of a processing procedure in an outer peripheral portion of a third substrate processing example of the third embodiment.
圖29係用以示意性地說明第三實施形態的第四基板處理例的外周部處理步驟中的處理液噴嘴的狀態之圖。 FIG. 29 is a diagram schematically illustrating a state of a processing liquid nozzle in a processing step of an outer peripheral portion of a fourth substrate processing example of the third embodiment.
圖30係用以示意性地顯示前述外周部處理步驟中的處理液噴嘴的狀態之圖。 FIG. 30 is a view schematically showing a state of a processing liquid nozzle in the aforementioned peripheral processing step.
圖31係用以說明本發明第四實施形態的前述基板處理裝置所具備的處理單元的構成例之示意性的圖。 FIG. 31 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus according to the fourth embodiment of the present invention.
圖32係用以顯示分別正從配置於處理位置的處理液噴嘴以及氣體噴嘴噴出處理液以及氣體的狀態之剖視圖。 32 is a cross-sectional view showing a state in which a processing liquid and a gas are being ejected from a processing liquid nozzle and a gas nozzle arranged at a processing position, respectively.
圖33係用以顯示在參考例中正從處理液噴嘴噴出處理液的狀態之剖視圖。 33 is a cross-sectional view showing a state where a processing liquid is being ejected from a processing liquid nozzle in a reference example.
圖34係配置於處理位置的狀態中之氣體噴嘴的俯視圖。 FIG. 34 is a plan view of a gas nozzle in a state of being disposed at a processing position.
圖35係用以說明前述基板處理裝置的主要部分的電性構成之方塊圖。 FIG. 35 is a block diagram illustrating the electrical configuration of the main part of the substrate processing apparatus.
圖36係用以說明記憶於資訊記憶部之旋轉速度-噴吹區域位置對應表之圖。 FIG. 36 is a diagram for explaining a correspondence table between the rotation speed and the position of the blowing area stored in the information storage unit.
圖37係用以說明藉由前述處理單元所執行的第五基板處理例之流程圖。 FIG. 37 is a flowchart illustrating a fifth substrate processing example performed by the processing unit.
圖38係用以說明圖37所示的外周部處理步驟的內容之流程圖。 FIG. 38 is a flowchart for explaining the contents of the processing steps of the peripheral portion shown in FIG. 37.
圖39係用以說明前述外周部處理步驟的內容之示意圖。 FIG. 39 is a schematic diagram for explaining the content of the aforementioned peripheral processing steps.
圖40係用以說明前述外周部處理步驟的內容之示意性的圖。 FIG. 40 is a schematic diagram for explaining the contents of the processing steps in the outer peripheral portion.
圖41係用以示意性地顯示前述外周部處理步驟中的處理液噴嘴以及氣體噴嘴的狀態之圖。 FIG. 41 is a diagram schematically showing states of the processing liquid nozzle and the gas nozzle in the aforementioned peripheral processing step.
圖42係示意性地顯示前述外周部處理步驟中的處理液噴嘴以及氣體噴嘴的狀態之圖。 FIG. 42 is a diagram schematically showing states of the processing liquid nozzle and the gas nozzle in the outer peripheral processing step.
圖43係用以示意性地顯示第六基板處理例的外周部處理步驟中的處理液噴嘴以及氣體噴嘴的狀態之圖。 FIG. 43 is a diagram schematically showing states of the processing liquid nozzle and the gas nozzle in the outer peripheral portion processing step of the sixth substrate processing example.
圖44係用以示意性地顯示前述外周部處理步驟中的處理液噴嘴以及氣體噴嘴的狀態之圖。 FIG. 44 is a view schematically showing states of the processing liquid nozzle and the gas nozzle in the aforementioned peripheral processing step.
圖45係用以說明記憶於記憶資訊部之旋轉速度-噴吹區域位置對應表之圖。 FIG. 45 is a diagram for explaining a rotation speed-blow area position correspondence table stored in the memory information section.
圖46係用以說明第五實施形態的第七基板處理例的外周部處理步驟的內容之流程圖。 FIG. 46 is a flowchart for explaining the content of the processing steps in the outer peripheral portion of the seventh substrate processing example of the fifth embodiment.
圖47係用以示意性地顯示第五實施形態的第八基板處理例的外周部處理步驟中的處理液噴嘴以及氣體噴嘴的狀態之圖。 FIG. 47 is a diagram schematically showing states of a processing liquid nozzle and a gas nozzle in an outer peripheral portion processing step of an eighth substrate processing example of the fifth embodiment.
圖48係用以示意性地說明前述外周部處理步驟中的處理液噴嘴以及氣體噴嘴的狀態之圖。 FIG. 48 is a diagram schematically illustrating states of the processing liquid nozzle and the gas nozzle in the outer peripheral processing step.
圖1係用以說明本發明第一實施形態的基板處理裝置的內部的布局之示意性的俯視圖。基板處理裝置1係葉片 式的裝置,用以藉由處理液或處理氣體逐片地處理半導體晶圓等圓板狀的基板W。基板處理裝置1係包含有:複數個處理單元2,係使用處理液處理基板W;裝載埠(load port)LP,係載置有承載器(carrier)C1,該承載器C1係用以收容被處理單元2處理之複數片基板W;搬運機器人IR以及搬運機器人CR,係在裝載埠LP與處理單元2之間搬運基板W;以及控制裝置3,係控制基板處理裝置1。搬運機器人IR係在承載器C1與搬運機器人CR之間搬運基板W。搬運機器人CR係在搬運機器人IR與處理單元2之間搬運基板W。複數個處理單元2係例如具有同樣的構成。 FIG. 1 is a schematic plan view for explaining an internal layout of a substrate processing apparatus according to a first embodiment of the present invention. The substrate processing apparatus 1 is a blade-type apparatus for processing a wafer-like substrate W such as a semiconductor wafer one by one by a processing liquid or a processing gas. The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing a substrate W using a processing liquid; and a load port LP for carrying a carrier C1, which is used to receive a substrate The plurality of substrates W processed by the processing unit 2; the transfer robot IR and the transfer robot CR transfer the substrate W between the loading port LP and the processing unit 2; and the control device 3 controls the substrate processing device 1. The transfer robot IR transfers the substrate W between the carrier C1 and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.
圖2係用以說明處理單元2的構成例之示意性的剖視圖。 FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.
處理單元2係用以使用處理液處理(頂側處理)基板W的外周部41(參照圖3等)之單元,更具體而言,處理單元2係用以使用處理液處理(頂側處理)基板W的上表面(主面)的外周區域42(參照圖3等)以及基板W的周端面44(參照圖3等)之單元。在本實施形態中,所謂基板W的外周部41係指包含有基板W的上表面的外周區域42、基板W的下表面(主面)的外周區域43(參照圖3等)以及基板W的周端面44之部分。此外,所謂外周區域42、43係指例如從基板W的周端緣起具有微距毫米(comma milli)至數毫米左右的寬度之環狀的區域。 The processing unit 2 is a unit for processing (top-side processing) the outer peripheral portion 41 (see FIG. 3 and the like) of the substrate W using a processing liquid, and more specifically, the processing unit 2 is for processing (top-side processing) using a processing liquid. A unit of an outer peripheral region 42 (see FIG. 3 and the like) of the upper surface (main surface) of the substrate W and a peripheral end face 44 (see FIG. 3 and the like) of the substrate W. In the present embodiment, the outer peripheral portion 41 of the substrate W refers to the outer peripheral region 42 including the upper surface of the substrate W, the outer peripheral region 43 (see FIG. 3 and the like) of the lower surface (main surface) of the substrate W, and Part of the peripheral end face 44. The outer peripheral regions 42 and 43 refer to, for example, annular regions having a width from a macro millimeter (comma milli) to several millimeters from the peripheral edge of the substrate W.
處理單元2係包含有:箱形的處理腔室(processing chamber)4,係具有內部空間;自轉夾具(spin chuck)(基板保 持單元)5,係在處理腔室4內以水平的姿勢保持一片基板W,並使基板W繞著通過基板W的中心之鉛直的旋轉軸線A1旋轉;處理液供給單元6,係用以將處理液(藥液以及清洗(rinse)液)供給至被自轉夾具5保持的基板W的上表面的外周區域42;第一惰性氣體供給單元8,係用以將惰性氣體供給至被自轉夾具5保持的基板W的上表面中央部;第二惰性氣體供給單元9,係用以將惰性氣體供給至被自轉夾具5保持的基板W的上表面的外周區域42;第三惰性氣體供給單元10,係用以將惰性氣體供給至被自轉夾具5保持的基板W的下表面的外周區域43;加熱器11,係加熱被自轉夾具5保持的基板W的下表面的外周區域43;以及筒狀的處理罩(processing cup)12,係圍繞自轉夾具5。 The processing unit 2 includes: a box-shaped processing chamber 4 having an internal space; and a spin chuck (substrate holding unit) 5 which holds a piece in the processing chamber 4 in a horizontal posture. The substrate W rotates the substrate W about a vertical axis of rotation A1 passing through the center of the substrate W; the processing liquid supply unit 6 is used to supply a processing liquid (a chemical liquid and a cleaning liquid) to the rotation fixture 5 The outer peripheral region 42 of the upper surface of the substrate W to be held; the first inert gas supply unit 8 for supplying an inert gas to the center portion of the upper surface of the substrate W held by the rotation jig 5; the second inert gas supply unit 9, The third inert gas supply unit 10 is used to supply an inert gas to the outer peripheral area 42 of the upper surface of the substrate W held by the rotation jig 5; The outer peripheral area 43 of the surface; the heater 11 heats the outer peripheral area 43 of the lower surface of the substrate W held by the rotation jig 5; and the cylindrical processing cup 12 surrounds the rotation jig 5.
處理腔室4係包含有:箱狀的隔壁13;作為送風單元的FFU(fan filter unit;風扇過濾器單元)14,係從隔壁13的上部將清淨空氣輸送至隔壁13內(相當於處理腔室4內);以及排氣裝置(未圖示),係從隔壁13的下部排出處理腔室4內的氣體。 The processing chamber 4 includes a box-shaped partition wall 13 and an FFU (fan filter unit) 14 as an air supply unit, which sends clean air from the upper part of the partition wall 13 into the partition wall 13 (equivalent to the processing chamber). Inside the chamber 4); and an exhaust device (not shown), which discharges the gas in the processing chamber 4 from the lower part of the partition wall 13.
FFU14係配置於隔壁13的上方,並安裝於隔壁13的頂部。FFU14係從隔壁13的頂部將清淨空氣輸送至處理腔室4內。排氣裝置係經由連接至處理罩12內的排氣導管15而連接至處理罩12的底部,用以從處理罩12的底部吸引處理罩12的內部。藉由FFU14以及排氣裝置,於處理腔室4內形成有降流(down flow)(下降流)。 The FFU 14 is arranged above the partition wall 13 and is mounted on the top of the partition wall 13. The FFU 14 sends clean air into the processing chamber 4 from the top of the partition wall 13. The exhaust device is connected to the bottom of the processing cover 12 via an exhaust duct 15 connected to the processing cover 12 to suck the inside of the processing cover 12 from the bottom of the processing cover 12. Downstream (downflow) is formed in the processing chamber 4 by the FFU 14 and the exhaust device.
在本實施形態中,自轉夾具5為真空吸附式的夾具。 自轉夾具5係吸附支撐基板W的下表面中央部。自轉夾具5係具備有:自轉軸(spin axis)16,係於鉛直的方向延伸;自轉基座(spin base)17,係安裝於該自轉軸16的上端,並以水平的姿勢吸附並保持基板W的下表面;以及自轉馬達(spin motor)(基板旋轉單元)18,係具有與自轉軸16同軸地結合之旋轉軸。自轉基座17係包含有:水平的圓形的上表面17a,係具有比基板W的外徑還小的外徑。在基板W的背面被自轉基座17吸附保持的狀態下,基板W的外周部41係伸出至比自轉基座17的周端緣還外側。驅動自轉馬達18,藉此使基板W繞著自轉軸16的中心軸線旋轉。 In this embodiment, the rotation jig 5 is a vacuum suction type jig. The rotation jig 5 sucks the center part of the lower surface of the support substrate W. The rotation jig 5 is provided with a spin axis 16 extending in a vertical direction, and a spin base 17 attached to the upper end of the rotation axis 16 and adsorbing and holding the substrate in a horizontal posture. The lower surface of W; and a spin motor (substrate rotation unit) 18 having a rotation shaft coaxially coupled to the rotation shaft 16. The rotation base 17 includes a horizontal upper surface 17 a having an outer diameter smaller than the outer diameter of the substrate W. In a state where the rear surface of the substrate W is sucked and held by the rotation base 17, the outer peripheral portion 41 of the substrate W is extended to the outside of the peripheral end edge of the rotation base 17. The rotation motor 18 is driven, thereby rotating the substrate W about the central axis of the rotation shaft 16.
處理液供給單元6係包含有處理液噴嘴19。處理液噴嘴19係例如為直式噴嘴(straight nozzle),以連續流動的狀態噴出液體。處理液噴嘴19係具有作為掃描噴嘴的基本形態,係能變更基板W的上表面中的處理液的供給位置。處理液噴嘴19係在自轉夾具5的上方安裝於大致水平地延伸的噴嘴臂20的前端部。噴嘴臂20係在自轉夾具5的側方被大致鉛直延伸的臂支撐軸21支撐。於臂支撐軸21結合有臂搖動馬達(電動馬達)22。臂搖動馬達22係例如為伺服馬達。能藉由臂搖動馬達22使噴嘴臂20以設定於自轉夾具5的側方之鉛直的搖動軸線A2(亦即臂支撐軸21的中心軸線)作為中心在水平面內搖動,藉此能使處理液噴嘴19繞著搖動軸線A2轉動。 The processing liquid supply unit 6 includes a processing liquid nozzle 19. The processing liquid nozzle 19 is, for example, a straight nozzle, and discharges liquid in a continuously flowing state. The processing liquid nozzle 19 has a basic form as a scanning nozzle, and can change the supply position of the processing liquid on the upper surface of the substrate W. The treatment liquid nozzle 19 is attached above the rotation jig 5 to a front end portion of a nozzle arm 20 extending substantially horizontally. The nozzle arm 20 is supported on the side of the rotation jig 5 by an arm support shaft 21 that extends substantially vertically. An arm swing motor (electric motor) 22 is coupled to the arm support shaft 21. The arm swing motor 22 is, for example, a servo motor. The arm swing motor 22 can cause the nozzle arm 20 to swing in the horizontal plane with the vertical swing axis A2 (that is, the central axis of the arm support shaft 21) set on the side of the rotation jig 5 as a center. The nozzle 19 is rotated about the swing axis A2.
於臂搖動馬達22結合有編碼器23,該編碼器23係用以檢測臂搖動馬達22的輸出軸22a的旋轉角度。當臂搖動 馬達22使輸出軸22a旋轉時,處理液噴嘴19係以已因應了輸出軸22a的旋轉角度之移動量繞著臂支撐軸21的中心軸線轉動。此外,當處理液噴嘴19繞著臂支撐軸21的中心軸線轉動時,臂搖動馬達22的輸出軸22a係以相當於處理液噴嘴19的移動量之旋轉角度旋轉。因此,藉由編碼器23檢測輸出軸22a的旋轉角度,藉此能檢測處理液噴嘴19的位置。 An encoder 23 is coupled to the arm swing motor 22, and the encoder 23 is used to detect the rotation angle of the output shaft 22 a of the arm swing motor 22. When the arm swing motor 22 rotates the output shaft 22a, the processing liquid nozzle 19 rotates around the central axis of the arm support shaft 21 by a movement amount corresponding to the rotation angle of the output shaft 22a. In addition, when the processing liquid nozzle 19 rotates about the central axis of the arm support shaft 21, the output shaft 22 a of the arm swing motor 22 rotates at a rotation angle corresponding to the movement amount of the processing liquid nozzle 19. Therefore, the position of the processing liquid nozzle 19 can be detected by detecting the rotation angle of the output shaft 22a by the encoder 23.
於處理液噴嘴19連接有藥液配管24,該藥液配管24係被供給有來自藥液供給源的藥液。於藥液配管24的中途部夾設有用以開閉藥液配管24之藥液閥25。此外,於處理液噴嘴19連接有清洗液配管26A,該清洗液配管26A係被供給有來自清洗液供給源的清洗液。於清洗液配管26A的中途部夾設有用以開閉清洗液配管26A之清洗液閥26B。當在清洗液閥26B被關閉的狀態下開啟藥液閥25時,從設定於處理液噴嘴19的下端之噴出口19a(參照圖3)噴出從藥液配管24供給至處理液噴嘴19之連續流動的藥液。此外,當在藥液閥25被關閉的狀態下開啟清洗液閥26B時,從設定於處理液噴嘴19的下端之噴出口19a(參照圖3)噴出從清洗液配管26A供給至處理液噴嘴19之連續流動的清洗液。 A chemical liquid pipe 24 is connected to the processing liquid nozzle 19, and the chemical liquid pipe 24 is supplied with a chemical liquid from a chemical liquid supply source. A medicinal liquid valve 25 for opening and closing the medicinal liquid pipe 24 is sandwiched between the midway portion of the medicinal liquid pipe 24. A cleaning liquid pipe 26A is connected to the processing liquid nozzle 19, and the cleaning liquid pipe 26A is supplied with a cleaning liquid from a cleaning liquid supply source. A cleaning liquid valve 26B for opening and closing the cleaning liquid pipe 26A is sandwiched between the cleaning liquid pipe 26A and the middle portion. When the chemical liquid valve 25 is opened with the cleaning liquid valve 26B closed, the continuous supply of the chemical liquid piping 24 to the processing liquid nozzle 19 is ejected from a spray outlet 19a (see FIG. 3) provided at the lower end of the processing liquid nozzle 19 Flowing liquid medicine. When the cleaning liquid valve 26B is opened with the chemical liquid valve 25 closed, the cleaning liquid valve 26B is ejected from a discharge port 19a (see FIG. 3) provided at the lower end of the processing liquid nozzle 19 and supplied from the cleaning liquid pipe 26A to the processing liquid nozzle 19 Continuous flow of cleaning fluid.
藥液係例如為用以蝕刻基板W的表面或者洗淨基板W的表面之液體。藥液亦可為包含有氫氟酸、硫酸、醋酸、硝酸、鹽酸、緩衝氫氟酸(BHF;buffered HF)、稀釋氫氟酸(DHF;dilute hydrofluoric acid)、氨水、過氧化氫水、有機 酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH(Tetra Methyl Ammonium Hydroxide;氫氧化四甲銨)等)、有機溶劑(例如IPA(isopropyl alcohol;異丙醇)等)、界面活性劑、防腐蝕劑中的至少一者之液體。清洗液係例如為去離子水(DIW;deionized water),但並未限定於DIW,亦可為碳酸水、電解離子水、氫水、臭氧水以及稀釋濃度(例如10ppm至100ppm左右)的鹽酸水中的任一者。 The chemical solution is, for example, a liquid for etching the surface of the substrate W or cleaning the surface of the substrate W. The chemical solution can also include hydrofluoric acid, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, buffered hydrofluoric acid (BHF; buffered HF), diluted hydrofluoric acid (DHF), ammonia water, hydrogen peroxide water, organic Acids (e.g. citric acid, oxalic acid, etc.), organic bases (e.g. TMAH (Tetra Methyl Ammonium Hydroxide; tetramethylammonium hydroxide), etc.), organic solvents (e.g. IPA (isopropyl alcohol)), surfactants, Liquid of at least one of the anticorrosives. The cleaning liquid is, for example, deionized water (DIW), but it is not limited to DIW. It may also be carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm). Either.
第一惰性氣體供給單元8係包含有:氣體噴出噴嘴27,係用以將惰性氣體供給至被自轉夾具5保持的基板W的上表面的中央部;第一氣體配管28,係用以將惰性氣體供給至氣體噴出噴嘴27;第一氣體閥29,係將第一氣體配管28予以開閉;以及噴嘴移動機構30,係用以使氣體噴出噴嘴27移動。當在設定於基板W的上表面中央部的上方之處理位置中開啟第一氣體閥29時,藉由從氣體噴出噴嘴27噴出的惰性氣體於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。 The first inert gas supply unit 8 includes a gas ejection nozzle 27 for supplying an inert gas to the center portion of the upper surface of the substrate W held by the rotation jig 5 and a first gas pipe 28 for inert gas. The gas is supplied to the gas ejection nozzle 27; the first gas valve 29 opens and closes the first gas pipe 28; and the nozzle moving mechanism 30 is used to move the gas ejection nozzle 27. When the first gas valve 29 is opened in a processing position set above the central portion of the upper surface of the substrate W, the inert gas ejected from the gas ejection nozzle 27 is formed above the substrate W from the central portion toward the outer peripheral portion 41. Flowing radial airflow.
第二惰性氣體供給單元9係包含有:上外周部氣體噴嘴31,係用以將惰性氣體噴出至基板W的上表面的外周區域42;第二氣體配管32,係用以將惰性氣體供給至上外周部氣體噴嘴31;第二氣體閥33,係用以將第二氣體配管32予以開閉;以及噴嘴移動機構34,係用以使上外周部氣體噴嘴31移動。當在與基板W的上表面的外周區域42對向之處理位置中開啟第二氣體閥33時,上外周部氣體噴嘴31係從基板W的旋轉半徑方向(以下稱為徑方向RD)的內 側朝外側以及斜下方將惰性氣體噴出至基板W的上表面的外周區域42的噴吹位置。藉此,能抑制基板W的上表面的外周區域42中的處理液的處理寬度。 The second inert gas supply unit 9 includes: an upper outer peripheral gas nozzle 31 for ejecting an inert gas to an outer peripheral area 42 of the upper surface of the substrate W; and a second gas pipe 32 for supplying an inert gas to the upper The peripheral gas nozzle 31; a second gas valve 33 for opening and closing the second gas pipe 32; and a nozzle moving mechanism 34 for moving the upper peripheral gas nozzle 31. When the second gas valve 33 is opened in a processing position facing the outer peripheral region 42 of the upper surface of the substrate W, the upper outer peripheral gas nozzle 31 is located from the inside of the rotational radius direction (hereinafter referred to as the radial direction RD) of the substrate W The inert gas is sprayed outward and diagonally downward to the spraying position of the outer peripheral region 42 of the upper surface of the substrate W. Thereby, the processing width of the processing liquid in the outer peripheral region 42 of the upper surface of the substrate W can be suppressed.
第三惰性氣體供給單元10係包含有:下外周部氣體噴嘴36,係將惰性氣體噴出至基板W的下表面的外周區域43;第三氣體配管37,係將惰性氣體供給至下外周部氣體噴嘴36;以及第三氣體閥38,係用以將第三氣體配管37予以開閉。當在與基板W的下表面的外周區域43對向的處理位置中開啟第三氣體閥38時,下外周部氣體噴嘴36係從徑方向RD的內側朝外側斜上方(例如相對於水平面為45°)將惰性氣體噴出至基板W的下表面的外周區域43的噴吹位置。 The third inert gas supply unit 10 includes a lower outer peripheral gas nozzle 36 for ejecting an inert gas to an outer peripheral area 43 of the lower surface of the substrate W, and a third gas pipe 37 for supplying an inert gas to the lower outer peripheral gas. The nozzle 36 and the third gas valve 38 are used to open and close the third gas pipe 37. When the third gas valve 38 is opened in a processing position facing the outer peripheral area 43 of the lower surface of the substrate W, the lower outer peripheral gas nozzle 36 is inclined upward from the inner side in the radial direction RD to the outer side (for example, 45 relative to the horizontal plane). °) The inert gas is sprayed to the blowing position of the outer peripheral region 43 of the lower surface of the substrate W.
加熱器11係形成為圓環狀,並具有與基板W的外徑同等的外徑。加熱器11係具有上端面,該上端面係與被自轉夾具5保持的基板W的下表面的外周區域43對向。加熱器11係使用陶瓷或炭化矽(SiC)形成,並於內部埋設有加熱源(未圖示)。藉由加熱源的加熱溫熱加熱器11,加熱器11係加熱基板W。藉由加熱器11從下表面側加熱基板W的外周部41,藉此能提升基板W的上表面的外周區域42中的處理速率。 The heater 11 is formed in an annular shape and has an outer diameter equal to the outer diameter of the substrate W. The heater 11 has an upper end surface which faces the outer peripheral region 43 of the lower surface of the substrate W held by the rotation jig 5. The heater 11 is formed using ceramic or silicon carbide (SiC), and a heating source (not shown) is embedded in the heater 11. The heater 11 is heated by the heating source, and the heater 11 heats the substrate W. The heater 11 heats the outer peripheral portion 41 of the substrate W from the lower surface side, whereby the processing rate in the outer peripheral region 42 of the upper surface of the substrate W can be increased.
處理罩12係配置於比被自轉夾具5保持的基板W還外側(遠離旋轉軸線A1的方向)。處理罩12係圍繞自轉基座17。當在自轉夾具5使基板W旋轉的狀態下對基板W供給處理液時,供給至基板W的處理液係被甩離至基板W 的周圍。在對基板W供給處理液時,朝上開放的處理罩12的上端部12a係配置於比自轉基座17還上方。因此,排出至基板W的周圍之藥液或水等處理液係被處理罩12接住。接著,被處理罩12接住的處理液係被排液處理。 The processing cover 12 is disposed outside the substrate W held in the rotation jig 5 (in a direction away from the rotation axis A1). The processing cover 12 surrounds the rotation base 17. When the processing liquid is supplied to the substrate W while the rotation jig 5 rotates the substrate W, the processing liquid supplied to the substrate W is thrown away around the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion 12 a of the processing cover 12 opened upward is disposed above the rotation base 17. Therefore, a treatment liquid such as a chemical solution or water discharged to the periphery of the substrate W is received by the treatment cover 12. Next, the processing liquid system received by the processing cover 12 is drained.
此外,處理單元2係包含有:徑方向位置感測器(位置感測器)47,係用以檢測被自轉夾具5保持的基板W的周端的徑方向RD的位置(以下簡稱為「徑方向位置」)。徑方向位置感測器47係針對基板W的周端面44中之預定的計測對象位置檢測基板W的周端面44的徑方向位置。在本實施形態中,藉由徑方向位置感測器47與控制裝置3構成周端徑方向位置計測單元。 In addition, the processing unit 2 includes a radial position sensor (position sensor) 47 for detecting a position in the radial direction RD of the peripheral end of the substrate W held by the rotation jig 5 (hereinafter referred to as "radial direction" position"). The radial position sensor 47 detects a radial position of the peripheral end surface 44 of the substrate W with respect to a predetermined measurement target position of the peripheral end surface 44 of the substrate W. In this embodiment, a radial end position measurement unit is configured by the radial position sensor 47 and the control device 3.
圖3係用以顯示正從配置於處理位置的處理液噴嘴19噴出處理液的狀態之剖視圖。 FIG. 3 is a cross-sectional view showing a state where the processing liquid is being ejected from the processing liquid nozzle 19 disposed at the processing position.
處理液噴嘴19係配置於與基板W的上表面的外周區域42對向的處理位置。在此狀態下,當選擇性地開啟藥液閥25(參照圖2)以及清洗液閥26B(參照圖2)時,處理液噴嘴19係從徑方向RD的內側朝外側斜下方將處理液(藥液或清洗液)噴出至基板W的上表面的外周區域42的著液位置(以下簡稱為「著液位置45」)。由於從徑方向RD的內側朝著液位置45噴出處理液,因此能抑制或防止處理液朝屬於器件(device)形成區域之基板W的上表面中央部飛濺。此時,來自噴出口19a的處理液的噴出方向為沿著徑方向RD之方向,且為以預定角度射入至基板的上表面之方向。射入角度θ 1係例如約30°至約80°,較佳為約45°。著液至 著液位置45的處理液係相對於著液位置45朝徑方向RD的外側流動。藉由處理液處理基板W的上表面的外周區域42中之僅比著液位置45還外側的區域。亦即,基板W的上表面的外周區域42中的處理寬度係因應著液位置45與基板W的周端面44之間的距離而改變。 The processing liquid nozzle 19 is disposed at a processing position facing the outer peripheral region 42 of the upper surface of the substrate W. In this state, when the chemical liquid valve 25 (see FIG. 2) and the cleaning liquid valve 26B (see FIG. 2) are selectively opened, the processing liquid nozzle 19 slants the processing liquid obliquely downward from the inside of the radial direction RD to the outside ( A chemical solution or a cleaning solution) is ejected to a liquid injection position (hereinafter simply referred to as a "liquid injection position 45") in the outer peripheral region 42 of the upper surface of the substrate W. Since the processing liquid is ejected toward the liquid position 45 from the inside of the radial direction RD, the processing liquid can be suppressed or prevented from splashing toward the center portion of the upper surface of the substrate W belonging to the device formation region. At this time, the discharge direction of the processing liquid from the discharge port 19a is a direction along the radial direction RD, and is a direction which is incident on the upper surface of the substrate at a predetermined angle. The incidence angle θ 1 is, for example, about 30 ° to about 80 °, and preferably about 45 °. The processing liquid from the liquid injecting position to the liquid injecting position 45 flows outward with respect to the liquid injecting position 45 in the radial direction RD. Of the outer peripheral region 42 of the upper surface of the substrate W, only the region outside the liquid contact position 45 is processed by the processing liquid. That is, the processing width in the outer peripheral region 42 of the upper surface of the substrate W is changed in accordance with the distance between the liquid landing position 45 and the peripheral end surface 44 of the substrate W.
圖4係顯示基板W在偏心狀態下被自轉夾具5保持的狀態之示意圖。圖5係用以顯示基板W在偏心狀態下被自轉夾具5保持的狀態之示意圖。圖6係用以顯示參考基板處理例中的基板W的上表面的外周區域42的處理寬度之俯視圖。 FIG. 4 is a schematic diagram showing a state where the substrate W is held by the rotation jig 5 in an eccentric state. FIG. 5 is a schematic diagram showing a state where the substrate W is held by the rotation jig 5 in an eccentric state. FIG. 6 is a plan view showing the processing width of the outer peripheral region 42 of the upper surface of the substrate W in the reference substrate processing example.
自轉夾具5係用以支撐基板W的中央部之形式的自轉夾具。此種形式的自轉夾具係不支撐基板W的外周部41。因此,如圖4以及圖5所示,在基板W的保持狀態中,會有基板W的中心從自轉夾具5所為之基板W的旋轉軸線A1偏離(亦即基板W相對於自轉夾具5偏心)之虞。 The rotation jig 5 is a rotation jig in the form of supporting a center portion of the substrate W. The rotation jig of this type does not support the outer peripheral portion 41 of the substrate W. Therefore, as shown in FIG. 4 and FIG. 5, in the holding state of the substrate W, the center of the substrate W may deviate from the rotation axis A1 of the substrate W for the rotation jig 5 (that is, the substrate W is eccentric to the rotation jig 5). Fear.
在針對基板W的外周部41之處理中,由於使基板W繞著旋轉軸線A1旋轉,因此當基板W相對於自轉夾具5偏心時,基板W的周端中之配置有與處理液噴嘴19的處理位置對應之周方向位置的周端(配置有處理液噴嘴19之周方向位置的周端,以下稱為「配置位置周端46」)與旋轉軸線A1之間的距離會因應基板W的旋轉角度位置而變化。在處理液噴嘴19相對於自轉夾具5處於靜止姿勢之情形中,處理液的著液位置45與配置位置周端46之間的距離會隨著基板W的旋轉角度位置而變化。換言之,相對於 旋轉軸線A1之配置位置周端46的徑方向位置係伴隨著基板W的旋轉角度位置而變化。 In the processing for the outer peripheral portion 41 of the substrate W, since the substrate W is rotated about the rotation axis A1, when the substrate W is eccentric with respect to the rotation jig 5, the processing position of the substrate W with the processing liquid nozzle 19 is disposed The distance between the peripheral end of the corresponding peripheral position (the peripheral end of the peripheral position where the processing liquid nozzle 19 is disposed, hereinafter referred to as the "arranged position peripheral end 46") and the rotation axis A1 depends on the rotational angle position of the substrate W And change. In a case where the processing liquid nozzle 19 is in a static posture with respect to the rotation jig 5, the distance between the liquid injection position 45 and the arrangement position peripheral end 46 of the processing liquid changes according to the rotation angle position of the substrate W. In other words, the radial position of the peripheral end 46 relative to the arrangement position of the rotation axis A1 changes with the rotation angle position of the substrate W.
結果,如圖6所示,會有基板W的上表面的外周區域42的洗淨寬度會在周方向的各個位置產生偏差之虞。當洗淨寬度存在大幅度的偏差時,變得必須察覺偏差而將中央的器件區域設定成較窄。因此,對於洗淨寬度要求高的精度。 As a result, as shown in FIG. 6, there is a possibility that the cleaning width of the outer peripheral region 42 on the upper surface of the substrate W may vary at various positions in the circumferential direction. When there is a large deviation in the cleaning width, it becomes necessary to detect the deviation and set the central device region to be narrow. Therefore, high precision is required for the washing width.
圖7係用以說明基板處理裝置1的主要部分的電性構成之方塊圖。 FIG. 7 is a block diagram for explaining the electrical configuration of the main parts of the substrate processing apparatus 1.
控制裝置3係例如使用微電腦來構成。控制裝置3係具有CPU(Central Processing Unit;中央處理器)等運算單元51、固定記憶體器件(未圖示)、硬碟驅動器等記憶單元52、輸出單元53以及輸入單元(未圖示)。於記憶單元52記憶有讓運算單元51執行的程式。 The control device 3 is configured using, for example, a microcomputer. The control device 3 includes a computing unit 51 such as a CPU (Central Processing Unit), a fixed memory device (not shown), a memory unit 52 such as a hard disk drive, an output unit 53, and an input unit (not shown). A program to be executed by the arithmetic unit 51 is stored in the memory unit 52.
記憶單元52係由可電性地覆寫資料之非揮發性記憶體所構成。記憶單元52係包含有:配方(recipe)記憶部54,係記憶有配方,該配方係規定針對基板W之各個處理的內容;各周端徑方向位置記憶部59,係記憶與被自轉夾具5保持的基板W的周方向的各周端位置中之相對於旋轉軸線A1為徑方向RD的位置(以下稱為「各周端徑方向位置」)有關的位置資訊;以及相位差記憶部55,係記憶相位差△P(參照圖8)。 The memory unit 52 is composed of a non-volatile memory that can electrically overwrite data. The memory unit 52 includes: a recipe memory unit 54 that stores a recipe that specifies the content of each process for the substrate W; each peripheral end position position memory unit 59 that stores and rotates the fixture 5 Among the positions of the peripheral ends of the substrate W held in the circumferential direction, the position information about the positions in the radial direction RD with respect to the rotation axis A1 (hereinafter referred to as “the positions of the circumferential ends in the radial direction”); The phase difference ΔP is memorized (see FIG. 8).
於控制裝置3連接有作為控制對象之自轉馬達18、臂搖動馬達22、噴嘴移動機構30、34、加熱器11的加熱源、 藥液閥25、清洗液閥26B、第一氣體閥29、第二氣體閥33以及第三氣體閥38等。控制裝置3係控制自轉馬達18、臂搖動馬達22、噴嘴移動機構30、34以及加熱器11的動作。此外,控制裝置3係將閥(25、26B、29、33、38)等予以開閉。 The control device 3 is connected with a rotation motor 18, an arm rocking motor 22, nozzle moving mechanisms 30 and 34, a heating source of the heater 11, a chemical liquid valve 25, a cleaning liquid valve 26B, a first gas valve 29, a first The second gas valve 33, the third gas valve 38, and the like. The control device 3 controls operations of the rotation motor 18, the arm swing motor 22, the nozzle moving mechanisms 30 and 34, and the heater 11. In addition, the control device 3 opens and closes valves (25, 26B, 29, 33, 38) and the like.
在進行這些控制對象的控制時,輸出單元53係將驅動訊號輸送至各個控制對象,控制對象係被輸入該驅動訊號,藉此控制對象係執行因應了驅動訊號的驅動動作。例如在欲控制臂搖動馬達22來驅動噴嘴臂20之情形中,輸出單元53係將噴嘴驅動訊號57輸送至臂搖動馬達22。而且,藉由對臂搖動馬達22輸入噴嘴驅動訊號57,臂搖動馬達22係以因應了噴嘴驅動訊號57的驅動動作驅動噴嘴臂20(亦即進行搖動動作)。 When performing control of these control objects, the output unit 53 transmits a driving signal to each control object, and the control object is input with the driving signal, whereby the control object performs a driving action corresponding to the driving signal. For example, in a case where the arm swing motor 22 is to be controlled to drive the nozzle arm 20, the output unit 53 sends the nozzle drive signal 57 to the arm swing motor 22. Further, the nozzle driving signal 57 is input to the arm swing motor 22, and the arm swing motor 22 drives the nozzle arm 20 in response to the driving operation of the nozzle driving signal 57 (that is, performs a swing operation).
此外,於控制裝置3輸入有編碼器23的檢測輸出以及徑方向位置感測器47的檢測輸出。 The control device 3 receives the detection output of the encoder 23 and the detection output of the radial position sensor 47.
在外周部處理步驟(步驟S6、步驟S7)中,控制裝置3係以基板W的上表面的外周區域42(參照圖3)中的著液位置45會追隨伴隨著基板W的旋轉角度位置之配置位置周端46的徑方向RD的位置變化(以下稱為「徑方向位置變化」)而於徑方向RD往復移動之方式使處理液噴嘴19驅動。更具體而言,處理液噴嘴19係追隨配置位置周端46的徑方向位置變化於徑方向RD往復移動。藉此,能在基板W的外周部41中將著液位置45與配置位置周端46之間的間隔保持一定。此外,所謂「使著液位置45往復移動」 並非是以基板W作為基準往復移動,而是指以處於靜止狀態的物體(例如處理腔室4的隔壁13)作為基準往復移動。 In the peripheral processing steps (steps S6 and S7), the control device 3 follows the position of the liquid injection position 45 in the peripheral area 42 (see FIG. 3) of the upper surface of the substrate W to follow the position of the rotation angle accompanying the substrate W The position change in the radial direction RD (hereinafter referred to as "radial direction position change") of the arrangement position peripheral end 46 causes the processing liquid nozzle 19 to be driven to reciprocate in the radial direction RD. More specifically, the treatment liquid nozzle 19 moves back and forth in the radial direction RD following the radial position change of the peripheral position 46 of the arrangement position. Thereby, the interval between the liquid-impacting position 45 and the arrangement position peripheral end 46 can be kept constant in the outer peripheral portion 41 of the substrate W. In addition, the "reciprocating the liquid-injection position 45" does not mean reciprocating using the substrate W as a reference, but means reciprocating using a stationary object (for example, the partition wall 13 of the processing chamber 4) as a reference.
然而,為了控制裝置3與臂搖動馬達22之間的噴嘴驅動訊號57的發送及接收以及伴隨噴嘴驅動訊號57的發送及接收之資料的讀入及資料解析,會有在處理液噴嘴19的驅動控制中處理液噴嘴19的驅動動作相對於來自控制裝置3的噴嘴驅動訊號57的輸出延遲之虞。 However, in order to control the transmission and reception of the nozzle driving signal 57 between the control device 3 and the arm swing motor 22, and the reading and data analysis of the data accompanying the transmission and reception of the nozzle driving signal 57, the processing liquid nozzle 19 is driven During the control, the driving operation of the processing liquid nozzle 19 may be delayed from the output of the nozzle driving signal 57 from the control device 3.
圖8係用以顯示配置位置周端46的徑方向位置變化之正弦波SW2以及已以著液位置45追隨配置位置周端46的位置變化(亦即著液位置45與配置位置周端46之間的間隔保持一定)之最佳的追隨時序輸出噴嘴驅動訊號57之情形中的著液位置45的徑方向位置變化之正弦波SW1。 FIG. 8 shows the sine wave SW2 of the radial position of the placement position periphery 46 and the position change of the placement position periphery 46 following the placement position 45 (that is, the difference between the placement position 45 and the placement position periphery 46 The interval between them is kept constant). The sine wave SW1 that changes the radial position of the liquid injection position 45 in the case of the sequential output nozzle drive signal 57 is tracked.
在已以著液位置45追隨配置位置周端46的徑方向位置變化之最佳的追隨時序輸出噴嘴驅動訊號57之情形中,如圖8所示,實際的處理液噴嘴19的徑方向位置變化(著液位置45的徑方向位置變化)的正弦波SW1(圖8中以實線所示)係從配置位置周端46的徑方向位置變化的正弦波SW2(圖8中以虛線所示)延遲達至預定的相位差△P。以下將此種處理液噴嘴19的驅動延遲所伴隨之著液位置45相對於配置位置周端46的徑方向位置變化之相位差簡稱為「相位差△P」。 In the case where the liquid injection position 45 has followed the radial position change of the arrangement position peripheral end 46 at the optimal tracking time sequence output nozzle driving signal 57, as shown in FIG. 8, the radial position of the actual processing liquid nozzle 19 changes. The sine wave SW1 (the position change in the radial direction of the impact position 45) (shown by a solid line in FIG. 8) is a sine wave SW2 (shown by a dotted line in FIG. 8) that changes from the radial position of the peripheral position 46 of the placement position. The delay reaches a predetermined phase difference ΔP. Hereinafter, the phase difference in the radial position change of the liquid injection position 45 with respect to the circumferential position 46 of the arrangement position accompanying the drive delay of the processing liquid nozzle 19 is simply referred to as "phase difference ΔP".
因此,在本實施形態中,將從控制裝置3朝臂搖動馬達22之噴嘴驅動訊號57的輸出時序設定成從前述最佳的追隨時序提早(錯開)達至相當於相位差△P之時間,藉此實 現以已排除相位差△P的排除時序將噴嘴驅動訊號57輸出至臂搖動馬達22。以下,具體地說明。 Therefore, in the present embodiment, the output timing of the nozzle driving signal 57 from the control device 3 to the arm rocking motor 22 is set to be earlier (staggered) from the aforementioned optimal tracking time to a time equivalent to the phase difference ΔP, Thereby, it is possible to output the nozzle driving signal 57 to the arm swing motor 22 at the exclusion timing of the phase difference ΔP that has been eliminated. This will be specifically described below.
圖9係用以說明圖7所示的各周端徑方向位置記憶部59之圖。於各周端徑方向位置記憶部59記憶有關於各周端高度位置之位置資訊。具體而言,記憶有著液位置45的往復移動的振幅A、著液位置45的往復移動的週期PD以及著液位置45的往復移動的相位P(將檢測出的缺口(notch)的位置作為基準之周方向相位)。這些位置資訊係基於各周端徑方向位置計測步驟(圖11的步驟S4)所計測的實測值之值。 FIG. 9 is a diagram for explaining each circumferential end radial direction position storage unit 59 shown in FIG. 7. The position information about the height position of each peripheral end is memorize | stored in each peripheral end radial direction position memory part 59. Specifically, it memorizes the amplitude A of the reciprocating movement of the liquid position 45, the period PD of the reciprocating movement of the liquid position 45, and the phase P of the reciprocating movement of the liquid position 45 (using the detected notch position as a reference). Phase in the circumferential direction). This position information is based on the value of the actual measurement value measured in each circumferential end radial direction position measurement step (step S4 of FIG. 11).
圖10係用以說明圖7所示的相位差記憶部55之圖。於各周端徑方向位置記憶部59記憶有相位差△P。相位差△P係與彼此不同之複數個旋轉速度(基板W的旋轉速度)對應地被記憶。 FIG. 10 is a diagram for explaining the phase difference memory section 55 shown in FIG. 7. A phase difference ΔP is memorized in each circumferential end radial direction position storage unit 59. The phase difference ΔP is memorized in correspondence with a plurality of rotation speeds (rotation speeds of the substrate W) different from each other.
圖11係用以說明處理單元2所為之第一基板處理例之流程圖。圖12係用以說明圖11所示的各周端徑方向位置計測步驟(步驟S4)的內容之流程圖。圖13係用以說明圖11所示的相位差計測步驟(步驟S5)的內容之流程圖。圖13係用以說明圖10所示的外周部處理步驟(步驟S6、步驟S7)的內容之流程圖。圖15以及圖16係用以說明外周部處理步驟(步驟S6、步驟S7)的內容之示意圖。圖17係用以顯示配置位置周端46的徑方向位置變化之正弦波SW2以及已在排除時序輸出噴嘴驅動訊號57之情形中的著液位置45的徑方向位置變化之正弦波SW1。圖18係用以顯示圖 11的基板處理例中的基板W的上表面的外周區域42的處理寬度之俯視圖。 FIG. 11 is a flowchart illustrating a first substrate processing example performed by the processing unit 2. FIG. 12 is a flowchart for explaining the content of each circumferential end radial direction position measurement step (step S4) shown in FIG. 11. FIG. FIG. 13 is a flowchart for explaining the content of the phase difference measurement step (step S5) shown in FIG. 11. FIG. 13 is a flowchart for explaining the content of the processing steps (step S6, step S7) of the outer peripheral portion shown in FIG. FIG. 15 and FIG. 16 are schematic diagrams for explaining the contents of the processing steps (step S6, step S7) in the outer peripheral portion. FIG. 17 is a sine wave SW2 showing the change in the radial position of the circumferential position 46 of the arrangement position and the sine wave SW1 of the change in the position of the radial position of the liquid injection position 45 in a case where the timing of outputting the nozzle drive signal 57 has been excluded. FIG. 18 is a plan view showing the processing width of the outer peripheral region 42 of the upper surface of the substrate W in the substrate processing example of FIG. 11.
參照圖1、圖2、圖3、圖7、圖9、圖10以及圖11說明該第一基板處理例。適當地參照圖12至圖18。 This first substrate processing example will be described with reference to FIGS. 1, 2, 3, 7, 9, 10, and 11. Refer appropriately to FIGS. 12 to 18.
首先,將未處理的基板W搬入至處理腔室4的內部(圖11的步驟S1)。具體而言,使正在保持基板W之搬運機器人CR的手部H進入至處理腔室4的內部,藉此在器件形成面朝向上方的狀態下將基板W授受至自轉夾具5。 First, the unprocessed substrate W is carried into the processing chamber 4 (step S1 in FIG. 11). Specifically, the hand H of the transfer robot CR holding the substrate W is entered into the processing chamber 4, and the substrate W is transferred to the rotation jig 5 with the device formation surface facing upward.
之後,當吸附支撐基板W的下表面中央部時,藉由自轉夾具5保持基板W(圖11的步驟S2)。在本實施形態中,未進行使用了定中心(centering)機構之基板W相對於自轉夾具5之中心對準。 After that, when the lower surface center portion of the support substrate W is suctioned, the substrate W is held by the rotation jig 5 (step S2 in FIG. 11). In this embodiment, the alignment of the substrate W using the centering mechanism with respect to the center of the rotation jig 5 is not performed.
基板W被自轉夾具5保持後,控制裝置3係控制自轉馬達18使基板W開始旋轉(圖11的步驟S3)。 After the substrate W is held by the rotation jig 5, the control device 3 controls the rotation motor 18 to start the rotation of the substrate W (step S3 in FIG. 11).
接著,控制裝置3係執行各周端徑方向位置計測步驟(圖11的步驟S4),該各周端徑方向位置計測步驟係計測被自轉夾具5保持的基板W的各周端徑方向位置。一併參照圖12,說明各周端徑方向位置計測步驟(步驟S4)。 Next, the control device 3 executes each peripheral end radial direction position measurement step (step S4 in FIG. 11), and each peripheral end radial direction position measurement step measures each peripheral end radial direction position of the substrate W held by the rotation jig 5. Referring to FIG. 12 together, a description will be given of the step of measuring the position in the radial direction of each circumferential end (step S4).
在各周端徑方向位置計測步驟(步驟S4)中,控制裝置3係使基板W的旋轉速度上升至預定的計測旋轉速度(比下述液體處理速度還慢的速度,例如約50rpm)並保持於該計測旋轉速度(圖12的步驟S11)。 In each circumferential end position measurement step (step S4), the control device 3 raises the rotation speed of the substrate W to a predetermined measurement rotation speed (a speed slower than the liquid processing speed described below, for example, about 50 rpm) and maintains it. At this time, the rotation speed is measured (step S11 in FIG. 12).
當基板W的旋轉達至計測旋轉速度時(在步驟S11中為是),控制裝置3係使用徑方向位置感測器47開始計測 各周端徑方向位置(圖12的步驟S12)。具體而言,控制裝置3係一邊控制自轉馬達18使基板W繞著旋轉軸線A1轉動,一邊藉由徑方向感測器47檢測基板W的周端面44中的預定的計測對象位置的徑方向位置。於徑方向位置感測器47開始檢測後,當基板W結束至少轉動一圈(360°)時(在圖12的步驟S13中為是),當作已檢測出所有的各周端徑方向位置(是)並結束計測(圖12步驟S14)。藉此,能檢測基板W相對於自轉夾具5之偏心狀態。 When the rotation of the substrate W reaches the measurement rotation speed (YES in step S11), the control device 3 starts measuring the radial position at each peripheral end using the radial position sensor 47 (step S12 in FIG. 12). Specifically, the control device 3 controls the rotation motor 18 to rotate the substrate W about the rotation axis A1, and detects a radial position of a predetermined measurement target position in the peripheral end surface 44 of the substrate W by a radial direction sensor 47. . After the radial position sensor 47 starts to detect, when the substrate W finishes rotating at least one turn (360 °) (YES in step S13 of FIG. 12), it is deemed that all the circumferential end radial positions have been detected. (Yes) The measurement is ended (step S14 in FIG. 12). Thereby, the eccentric state of the substrate W with respect to the rotation jig 5 can be detected.
控制裝置3係依據所計測的各周端徑方向位置算出著液位置45的往復移動的振幅A、著液位置45的往復移動的週期PD以及著液位置45的往復移動的相位P(基於缺口的檢測之周方向相位)(圖12的步驟S15)。所算出的振幅A、週期PD以及相位P係記憶於各周端徑方向位置記憶部59(圖12的步驟S16)。之後,各周端徑方向位置計測步驟(步驟S4)係結束。各周端徑方向位置計測步驟(步驟S4)的執行時間係例如約5秒。 The control device 3 calculates the amplitude A of the reciprocating movement of the landing position 45, the period PD of the reciprocating movement of the landing position 45, and the phase P of the reciprocating movement of the landing position 45 based on the measured positions of the circumferential end diameters (based on the gaps) Detected phase in the circumferential direction) (step S15 in FIG. 12). The calculated amplitude A, period PD, and phase P are stored in each circumferential end radial direction position storage unit 59 (step S16 in FIG. 12). After that, the step (step S4) of each circumferential end radial direction position measurement process ends. The execution time of each circumferential end radial direction position measurement step (step S4) is, for example, about 5 seconds.
接著,控制裝置3係執行用以計測相位差△P(參照圖8)之相位差計測步驟(圖11的步驟S5)。一併參照圖13,說明相位差計測步驟(步驟S5)。 Next, the control device 3 executes a phase difference measurement step (step S5 in FIG. 11) for measuring the phase difference ΔP (see FIG. 8). Referring to Fig. 13 together, a phase difference measurement step (step S5) will be described.
在相位差計測步驟(步驟S5)中,計測已因應了下述外周部處理步驟(外周部藥液處理步驟(步驟S6)以及外周部清洗液處理步驟(步驟S7))中的基板W的旋轉速度(處理旋轉速度)之相位差△P。在外周部處理步驟中設定有複數個處理旋轉速度之情形中,計測與各個處理旋轉速度對應之 相位差△P(亦即複數個相位差△P)。 In the phase difference measurement step (step S5), the rotation of the substrate W in the peripheral processing steps (peripheral chemical solution processing step (step S6) and peripheral cleaning solution processing step (step S7)) described below has been measured. Phase difference ΔP in speed (processing rotation speed). In the case where a plurality of processing rotation speeds are set in the outer peripheral processing step, a phase difference ΔP (that is, a plurality of phase differences ΔP) corresponding to each processing rotation speed is measured.
具體而言,控制裝置3係控制臂搖動馬達22將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置(圖13的步驟S21)。此外,控制裝置3係控制自轉馬達18使基板W的旋轉速度上升至預定的計測旋轉速度(亦即外周部處理步驟中的基板W的旋轉速度)並保持於該計測旋轉速度(圖13的步驟S22)。 Specifically, the control device 3 is a control arm rocking motor 22 that arranges the processing liquid nozzle 19 at a processing position facing the outer peripheral region 42 of the upper surface (step S21 in FIG. 13). The control device 3 controls the rotation motor 18 to increase the rotation speed of the substrate W to a predetermined measurement rotation speed (that is, the rotation speed of the substrate W in the peripheral processing step) and maintains the measurement rotation speed (step in FIG. 13). S22).
控制裝置3係依據各周端徑方向位置記憶部59所記憶的振幅A、週期PD以及相位P(各周端徑方向位置計測步驟(步驟S4)的計測結果),以著液位置45會以與配置位置周端46的位置變化相同的振幅A以及相同的週期PD移動之方式作成用以使處理液噴嘴19驅動之噴嘴驅動訊號57(噴嘴驅動訊號作成步驟,圖13的步驟S23)。 The control device 3 is based on the amplitude A, the period PD, and the phase P (the measurement results of each peripheral end position measurement step (step S4)) memorized by the peripheral end position position storage unit 59. A nozzle driving signal 57 (nozzle driving signal generation step, step S23 in FIG. 13) for generating the nozzle driving signal 57 driven by the processing liquid nozzle 19 with the same amplitude A and the same period PD movement as the position change of the position peripheral end 46 is prepared.
接著,當基板W的旋轉達至計測旋轉速度時(在步驟S22中為是),控制裝置3係依據用以檢測自轉馬達18的輸出軸的旋轉量之編碼器(未圖示)所檢測之基板W的旋轉角度位置,在著液位置45追隨配置位置周端46的位置變化(亦即著液位置45與配置位置周端46之間的間隔保持一定)之最適當的追隨時序輸出噴嘴驅動訊號57(圖13的步驟S24)。如參照圖8所述般,實際的著液位置45的徑方向位置變化的正弦波SW1(圖8中以實線所示)係從配置位置周端46的高度位置變化的正弦波SW2(圖8中以虛線所示)延遲達至預定的相位差△P。控制裝置3係參照編碼器23的檢測輸出求出處理液噴嘴19的實際的徑方向位置變化(著 液位置45的徑方向位置變化),並依據該實際的徑方向位置變化算出相位差△P(圖13的步驟S25)。所算出的相位差△P係記憶於各相位差記憶部55(圖13的步驟S26)。藉此,結束與該旋轉速度對應之相位差△P的計測。在殘留有針對其他的旋轉速度之相位差△P的計測之情形中(在步驟S27中為是),返回至圖13的步驟S21。在已結束針對全部的旋轉速度之相位差△P的計測之情形中(在步驟S27中為否),結束相位差計測步驟(步驟S5)。 Then, when the rotation of the substrate W reaches the measured rotation speed (YES in step S22), the control device 3 detects the rotation of the output shaft of the rotation motor 18 based on an encoder (not shown). The rotation angle position of the substrate W follows the position change of the placement position peripheral end 46 following the placement position 45 (that is, the interval between the placement position 45 and the placement position peripheral end 46 is kept constant). Signal 57 (step S24 in FIG. 13). As described with reference to FIG. 8, the sine wave SW1 (shown by a solid line in FIG. 8) in which the radial position of the actual liquid injection position 45 changes is a sine wave SW2 (FIG. 8) that changes from the height position of the peripheral position 46 of the placement position. (Indicated by dotted lines in 8) is delayed to a predetermined phase difference ΔP. The control device 3 refers to the detection output of the encoder 23 to obtain the actual radial position change of the processing liquid nozzle 19 (radial position change of the landing position 45), and calculates the phase difference ΔP based on the actual radial position change. (Step S25 in FIG. 13). The calculated phase difference ΔP is stored in each phase difference storage unit 55 (step S26 in FIG. 13). Thereby, the measurement of the phase difference ΔP corresponding to the rotation speed is ended. When the measurement of the phase difference ΔP for other rotation speeds remains (YES in step S27), the process returns to step S21 in FIG. 13. When the measurement of the phase difference ΔP for all the rotation speeds has been completed (NO in step S27), the phase difference measurement step is ended (step S5).
相位差計測步驟(步驟S5)結束後,接著,控制裝置3係執行外周部藥液處理步驟(外周部處理步驟,圖11的步驟S6),該外周部藥液處理步驟係使用藥液處理基板W的外周部41。外周部藥液處理步驟(步驟S6)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1000rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部藥液處理步驟(步驟S6)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的藥液的著液位置45追隨伴隨著基板W的旋轉角度位置之配置位置周端46的徑方向位置變化於徑方向RD往復移動。一併參照圖14,說明外周部藥液處理步驟(步驟S6)。 After the phase difference measurement step (step S5) is completed, the control device 3 then executes a peripheral chemical solution processing step (peripheral processing step, step S6 in FIG. 11). This peripheral chemical solution processing step uses a chemical solution to process the substrate. W 的 外 周 部 41。 W outer periphery 41. The peripheral chemical processing step (step S6) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1000 rpm). In addition, the control device 3 executes a liquid-reciprocating position reciprocating step in parallel with the peripheral chemical liquid processing step (step S6). This liquid-receiving position reciprocating step causes the chemical liquid in the peripheral area 42 of the upper surface of the substrate W to The liquid-impacting position 45 changes in the radial direction position of the peripheral position 46 following the arrangement position accompanying the rotation angle position of the substrate W and reciprocates in the radial direction RD. Referring to Fig. 14 together, a procedure for treating the peripheral chemical solution (step S6) will be described.
在外周部藥液處理步驟(步驟S6)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(亦即外周部藥液處理步驟(步驟S6)中的基板W的旋轉速度)(圖14的步驟S30)。此外,在處理液噴嘴19位於退避位置之情形中,控制裝置3係控制臂搖動馬達22, 將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置(圖14的步驟S31)。 In the peripheral chemical solution processing step (step S6), the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotational speed (that is, the substrate in the peripheral chemical solution processing step (step S6)). W rotation speed) (step S30 in FIG. 14). In addition, in a case where the processing liquid nozzle 19 is located at the retracted position, the control device 3 controls the arm swing motor 22 to arrange the processing liquid nozzle 19 at a processing position facing the outer peripheral region 42 of the upper surface (step S31 in FIG. 14). .
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉清洗液閥26B一邊開啟藥液閥25,藉此從處理液噴嘴19的噴出口19a開始噴出藥液(圖14的步驟S32)。此外,如圖15以及圖16所示,控制裝置3係開始執行前述著液位置往復移動步驟(圖14的步驟S33)。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the chemical liquid valve 25 while closing the cleaning liquid valve 26B, thereby ejecting the chemical liquid from the ejection port 19a of the processing liquid nozzle 19 (step S32 in FIG. 14). ). In addition, as shown in FIG. 15 and FIG. 16, the control device 3 starts to execute the step of reciprocating the impact position (step S33 in FIG. 14).
著液位置往復移動步驟(圖14的步驟S33)係如下方式進行。 The step of reciprocating the landing position (step S33 in FIG. 14) is performed as follows.
亦即,控制裝置3係依據各周端徑方向位置記憶部59所記憶的振幅A、週期PD以及相位P(各周端徑方向位置計測步驟(步驟S4)的計測結果),以著液位置45會以與配置位置周端46的位置變化相同的振幅A以及相同的週期PD移動之方式作成用以使處理液噴嘴19驅動之噴嘴驅動訊號57(噴嘴驅動訊號作成步驟,圖14的步驟S34)。 That is, the control device 3 sets the liquid injecting position based on the amplitude A, the period PD, and the phase P (the measurement result of each peripheral end radial direction position measurement step (step S4)) stored in the peripheral end radial direction position storage unit 59. 45 will generate a nozzle driving signal 57 for driving the processing liquid nozzle 19 with the same amplitude A and the same period PD movement as the position change of the peripheral position 46 of the placement position (the nozzle driving signal creation step, step S34 in FIG. 14). ).
接著,當基板W的旋轉達至處理旋轉速度時,控制裝置3係依據用以檢測自轉馬達18的輸出軸的旋轉量之編碼器(未圖示)所檢測之基板W的旋轉角度位置,在從前述最適當的追隨時序提早(錯開)達至相當於相位差△P的時間之排除時序輸出噴嘴驅動訊號57(圖14的步驟S35)。此時,控制裝置3係參照相位差記憶部55以所記憶的相位差△P中之與該處理旋轉速度對應之相位差△P獲得排除時序。 Then, when the rotation of the substrate W reaches the processing rotation speed, the control device 3 is based on the rotation angle position of the substrate W detected by the encoder (not shown) for detecting the rotation amount of the output shaft of the rotation motor 18 at The nozzle drive signal 57 is output from the exclusion timing of the time when the above-mentioned most suitable tracking time is earlier (staggered) to reach the phase difference ΔP (step S35 in FIG. 14). At this time, the control device 3 refers to the phase difference storage unit 55 to obtain the exclusion timing with the phase difference ΔP corresponding to the processing rotation speed among the stored phase differences ΔP.
如圖17所示,在已在排除時序輸出噴嘴驅動訊號之情形中,實際的著液位置45的徑方向位置變化的正弦波 SW1(在圖17中以實線所示)係幾乎或完全與配置位置周端46的徑方向位置變化的正弦波SW2(在圖17中以虛線所示)沒有相位差。 As shown in FIG. 17, in the case where the time sequence output nozzle driving signal has been excluded, the sine wave SW1 (shown by a solid line in FIG. 17) of the radial position change of the actual injection position 45 is almost or completely related to The sine wave SW2 (indicated by a dotted line in FIG. 17) whose position in the radial direction of the arrangement position peripheral end 46 changes has no phase difference.
藉此,實現以已排除相位差△P之排除時序將噴嘴驅動訊號57輸出至臂搖動馬達22。藉此,能以可使著液位置45追隨配置位置周端46的徑方向位置變化往復移動之時序輸出噴嘴驅動訊號57。藉此,能與相對於噴嘴驅動訊號57的輸出之處理液噴嘴19的驅動延遲無關地使著液位置45良好地追隨配置位置周端46的徑方向位置變化。因此,如圖18所示且如外周部處理步驟(步驟S6、步驟S7)所示般,能提升基板W的上表面的外周區域42中的處理寬度的均勻性。 Thereby, it is possible to output the nozzle driving signal 57 to the arm swing motor 22 at the exclusion timing of the phase difference ΔP having been eliminated. Thereby, the nozzle driving signal 57 can be output at a timing capable of reciprocating the impact position 45 following the radial position change of the arrangement position peripheral end 46. Thereby, regardless of the driving delay of the processing liquid nozzle 19 with respect to the output of the nozzle driving signal 57, the liquid injection position 45 can well follow the radial position change of the arrangement position peripheral end 46. Therefore, as shown in FIG. 18 and as shown in the peripheral processing steps (steps S6 and S7), the uniformity of the processing width in the peripheral area 42 of the upper surface of the substrate W can be improved.
當從開始噴出藥液經過預先設定的期間時(在圖14的步驟S36中為是),控制裝置3係關閉藥液閥25。藉此,停止(結束)從處理液噴嘴19噴出藥液(圖14的步驟S37)。 When a predetermined period of time has elapsed from the start of ejection of the chemical solution (YES in step S36 of FIG. 14), the control device 3 closes the chemical solution valve 25. Thereby, the ejection of the chemical liquid from the processing liquid nozzle 19 is stopped (finished) (step S37 in FIG. 14).
此外,在外周部藥液處理步驟(步驟S6)中,加熱器11的熱源被開啟,藉由加熱器11加熱基板W的下表面的外周區域43。藉此,提高外周部藥液處理的處理速度。此外,在外周部藥液處理步驟(步驟S6)中,藉由從位於處理位置的氣體噴出噴嘴27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。藉由該放射狀氣流保護屬於器件形成區域之基板W的上表面中央部。此外,在外周部藥液處理步驟(步驟S6)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域 42的噴吹位置噴吹惰性氣體。能藉由該惰性氣體的噴吹控制基板W的上表面的外周區域42中的藥液的處理寬度。此外,在外周部藥液處理步驟(步驟S6)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。能藉由該惰性氣體的噴吹防止藥液繞入至基板W的下表面。 Further, in the peripheral chemical processing step (step S6), the heat source of the heater 11 is turned on, and the outer peripheral region 43 of the lower surface of the substrate W is heated by the heater 11. Thereby, the processing speed of the chemical processing of the peripheral part is improved. Further, in the peripheral chemical solution processing step (step S6), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection nozzle 27 located at the processing position. . The central portion of the upper surface of the substrate W belonging to the device formation region is protected by this radial airflow. Further, in the peripheral chemical solution processing step (step S6), an inert gas is sprayed from the upper peripheral gas nozzle 31 located at the processing position to the injection position of the peripheral region 42 on the upper surface of the substrate W. The processing width of the chemical solution in the outer peripheral region 42 of the upper surface of the substrate W can be controlled by the blowing of the inert gas. In addition, in the outer peripheral chemical solution processing step (step S6), an inert gas is ejected from the lower outer peripheral gas nozzle 36 located at the processing position to the injection position of the outer peripheral region 43 on the lower surface of the substrate W. The injecting of the inert gas can prevent the chemical solution from getting into the lower surface of the substrate W.
第三惰性氣體供給單元10係包含有:下外周部氣體噴嘴36,係用以將惰性氣體噴出至基板W的下表面的外周區域43;第三氣體配管37,係用以將惰性氣體供給至下外周部氣體噴嘴36;以及第三氣體閥38,係用以開閉第三氣體配管37。當在與基板W的下表面的外周區域43對向的處理位置中開啟第三氣體閥38時,下外周部氣體噴嘴36係朝鉛直上方地將惰性氣體噴出至基板W的下表面的外周區域43的噴吹位置。 The third inert gas supply unit 10 includes a lower outer peripheral gas nozzle 36 for ejecting an inert gas to an outer peripheral area 43 of the lower surface of the substrate W, and a third gas pipe 37 for supplying an inert gas to The lower outer peripheral gas nozzle 36 and a third gas valve 38 are used to open and close the third gas pipe 37. When the third gas valve 38 is opened in the processing position facing the outer peripheral area 43 of the lower surface of the substrate W, the lower outer peripheral gas nozzle 36 ejects an inert gas to the outer peripheral area of the lower surface of the substrate W vertically upward. 43 blowing position.
在外周部藥液處理步驟(步驟S6)結束後,接著,控制裝置3係執行外周部清洗液處理步驟(外周部處理步驟,圖11的步驟S7),該外周部清洗液處理步驟係使用清洗液處理基板W的外周部41。外周部清洗液處理步驟(步驟S7)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1000rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部清洗液處理步驟(步驟S7)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的清洗液的著液位置45追隨伴隨著基板W的旋轉角度位置之配置位置周端46的徑方向位置 變化於徑方向往復RD往復移動。一併參照圖14,說明外周部清洗液處理步驟(步驟S7)。 After the peripheral chemical solution processing step (step S6) is completed, the control device 3 executes the peripheral cleaning solution processing step (peripheral processing step, step S7 in FIG. 11), and the peripheral cleaning solution processing step uses cleaning The outer peripheral portion 41 of the liquid processing substrate W. The outer peripheral cleaning liquid processing step (step S7) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1000 rpm). In addition, the control device 3 executes a liquid-reciprocating position reciprocating movement step in parallel with the peripheral cleaning liquid processing step (step S7). The liquid-receiving position reciprocating movement step causes the cleaning liquid in the peripheral area 42 of the upper surface of the substrate W The liquid-impeding position 45 follows the arrangement position of the peripheral position 46 accompanying the rotation angle position of the substrate W. The radial position changes back and forth in the radial direction RD. Referring to Fig. 14 together, the outer peripheral cleaning liquid processing step (step S7) will be described.
在外周部清洗液處理步驟(步驟S7)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(亦即外周部清洗液處理步驟(步驟S7)中的基板W的旋轉速度)(步驟S30)。此外,在處理液噴嘴19位於退避位置之情形中,控制裝置3係控制臂搖動馬達22,將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置(步驟S31)。 In the peripheral cleaning solution processing step (step S7), the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotation speed (that is, the substrate in the peripheral cleaning solution processing step (step S7)). W rotation speed) (step S30). In addition, when the processing liquid nozzle 19 is located at the retreat position, the control device 3 controls the arm swing motor 22 to arrange the processing liquid nozzle 19 at a processing position facing the outer peripheral region 42 of the upper surface (step S31).
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉藥液液閥25一邊開啟清洗液閥26B,藉此從處理液噴嘴19的噴出口19a開始噴出清洗液(步驟S32)。此外,控制裝置3係開始執行著液位置往復移動步驟(步驟S33)。由於著液位置往復移動步驟已在外周部藥液處理步驟(步驟S6)中說明完畢,故省略其說明(步驟S33)。當從開始噴出清洗液經過預先設定的期間時(在步驟S36中為是),控制裝置3係關閉清洗液閥26B。藉此,停止(結束)從處理液噴嘴19噴出清洗液(步驟S37)。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the cleaning liquid valve 26B while closing the chemical liquid valve 25, thereby ejecting the cleaning liquid from the discharge port 19a of the processing liquid nozzle 19 (step S32). In addition, the control device 3 starts to execute the step of reciprocating the impact position (step S33). Since the step of reciprocating the landing position has been described in the step of processing the peripheral liquid (step S6), the description is omitted (step S33). When a predetermined period has elapsed from the start of discharging the cleaning liquid (YES in step S36), the control device 3 closes the cleaning liquid valve 26B. Thereby, the discharge of the cleaning liquid from the processing liquid nozzle 19 is stopped (finished) (step S37).
此外,在外周部清洗液處理步驟(步驟S7)中,藉由從位於處理位置的氣體噴出閥27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。此外,在外周部清洗液處理步驟(步驟S7)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。此外,在外周部清洗液處理 步驟(S7)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴吹惰性氣體。在外周部清洗液處理步驟(S7)中,可將加熱器11的熱源開啟且藉由加熱器11加熱基板W的下表面的外周區域43,亦可不加熱基板W的下表面的外周區域43。 In the outer peripheral cleaning liquid processing step (step S7), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection valve 27 located at the processing position. . In addition, in the outer peripheral cleaning liquid processing step (step S7), an inert gas is sprayed from the upper outer peripheral gas nozzle 31 located at the processing position to the injection position of the outer peripheral region 42 on the upper surface of the substrate W. In the outer peripheral cleaning liquid processing step (S7), an inert gas is blown from the lower outer peripheral gas nozzle 36 located at the processing position to the injection position of the outer peripheral region 43 on the lower surface of the substrate W. In the peripheral cleaning solution processing step (S7), the heat source of the heater 11 may be turned on and the outer peripheral region 43 of the lower surface of the substrate W may be heated by the heater 11 or the outer peripheral region 43 of the lower surface of the substrate W may not be heated.
之後,控制裝置3係控制臂搖動馬達22將處理液噴嘴19返回至自轉夾具5的側方的退避位置。 After that, the control device 3 controls the arm swing motor 22 to return the processing liquid nozzle 19 to the side retracted position of the rotation jig 5.
接著,進行使基板W乾燥之旋乾(spin-drying)(圖11的步驟S8)。具體而言,控制裝置3係控制自轉馬達18使基板W加速至比各個處理步驟S2至步驟S8中的旋轉速度還高之乾燥旋轉速度(例如數千rpm),並使基板W以該乾燥旋轉速度旋轉。藉此,大的離心力施加至基板W上的液體,附著於基板W的外周部41的液體係被甩離至基板W的周圍。如此,從基板W的外周部41去除液體而使基板W的外周部41乾燥。 Next, spin-drying is performed to dry the substrate W (step S8 in FIG. 11). Specifically, the control device 3 controls the rotation motor 18 to accelerate the substrate W to a drying rotation speed (for example, several thousand rpm) higher than the rotation speed in each of the processing steps S2 to S8, and causes the substrate W to rotate at the drying speed. Speed rotation. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid system attached to the outer peripheral portion 41 of the substrate W is thrown away from the periphery of the substrate W. In this manner, the liquid is removed from the outer peripheral portion 41 of the substrate W, and the outer peripheral portion 41 of the substrate W is dried.
當從基板W開始高速旋轉經過預定期間時,控制裝置3係藉由控制自轉馬達18而停止自轉夾具5所為之基板W的旋轉。 When the high-speed rotation from the substrate W has passed for a predetermined period, the control device 3 stops the rotation of the substrate W for the rotation jig 5 by controlling the rotation motor 18.
之後,從處理腔室4內搬出基板W(圖11的步驟S9)。具體而言,控制裝置3係使搬運機器人CR的手部進入至處理腔室4的內部。接著,控制裝置3係使搬運機器人CR的手部保持自轉夾具5上的基板W。之後,控制裝置3係使搬運機器人CR的手部從處理腔室4內退避。藉此,從處理腔室4搬出處理後的基板W。 After that, the substrate W is carried out from the processing chamber 4 (step S9 in FIG. 11). Specifically, the control device 3 allows the hand of the transfer robot CR to enter the processing chamber 4. Next, the control device 3 holds the substrate W on the rotation jig 5 by the hand of the transfer robot CR. After that, the control device 3 retracts the hand of the transfer robot CR from the processing chamber 4. Thereby, the processed substrate W is carried out from the processing chamber 4.
藉此,依據第一實施形態,在著液位置往復移動步驟(步驟S33)中,以已排除相位差△P(處理液噴嘴19的驅動延遲所伴隨之相位差)的排除時序將噴嘴驅動訊號57輸出至臂搖動馬達22。亦即,以能使著液位置45追隨配置位置周端46的徑方向位置變化往復移動之時序輸出噴嘴驅動訊號57。藉此,能與相對於噴嘴驅動訊號57的輸出之處理液噴嘴19的驅動延遲無關地使著液位置45良好地追隨配置位置周端46的徑方向位置變化。 Thus, according to the first embodiment, in the step of reciprocating the landing position (step S33), the nozzle driving signal is eliminated at the elimination timing of the phase difference ΔP (the phase difference accompanying the driving delay of the processing liquid nozzle 19). 57 is output to the arm swing motor 22. That is, the nozzle driving signal 57 is output at a timing capable of reciprocating the liquid-impeding position 45 following the radial position change of the arrangement position peripheral end 46. Thereby, regardless of the driving delay of the processing liquid nozzle 19 with respect to the output of the nozzle driving signal 57, the liquid injection position 45 can well follow the radial position change of the arrangement position peripheral end 46.
此外,能一邊使被自轉夾具5保持的基板W繞著旋轉軸線A1轉動一邊使用徑方向位置感測器47檢測基板W的周端面44的計測對象位置的徑方向位置,藉此良好地計測基板W的周方向的各周端位置。亦即,能使用位置感測器(徑方向位置感測器47)此種簡單的構成良好地計測基板W的周方向的各周端位置。 In addition, the radial position of the measurement target position of the peripheral end surface 44 of the substrate W can be detected using the radial position sensor 47 while the substrate W held by the rotation jig 5 is rotated around the rotation axis A1, thereby measuring the substrate well. The position of each peripheral end in the circumferential direction of W. That is, a simple configuration such as a position sensor (radial direction position sensor 47) can be used to measure the positions of the peripheral ends of the substrate W in the circumferential direction.
此外,能使處理液噴嘴19移動並使用編碼器23檢測此時的處理液噴嘴19的移動量,藉此實際地計測相位差△P。由於依據實際測量的相位差△P來移動處理液噴嘴19,藉此能使著液位置45的往復移動更良好地追隨配置位置周端46的位置變化。 In addition, it is possible to actually measure the phase difference ΔP by moving the processing liquid nozzle 19 and using the encoder 23 to detect the amount of movement of the processing liquid nozzle 19 at this time. Since the processing liquid nozzle 19 is moved in accordance with the actually measured phase difference ΔP, the reciprocating movement of the liquid injection position 45 can better follow the position change of the peripheral position 46 of the arrangement position.
此外,於相位差記憶部55設置有複數個相位差△P,各個相位差△P係與基板W的處理旋轉速度對應地設置有複數個。而且,以已排除與處理旋轉速度對應的相位差△P之排除時序輸出噴嘴驅動訊號57。因此,即使在基板處理裝置1中外周部藥液處理步驟(步驟S6)中的基板W的處理 旋轉速度根據配方的內容而不同之情形中,亦能以與各處理旋轉速度對應之最適當的時序輸出噴嘴驅動訊號。 In addition, a plurality of phase differences ΔP are provided in the phase difference memory unit 55, and a plurality of phase differences ΔP are provided corresponding to the processing rotation speed of the substrate W. Further, the nozzle driving signal 57 is output at the exclusion timing at which the phase difference ΔP corresponding to the processing rotation speed has been excluded. Therefore, even in the case where the processing rotation speed of the substrate W in the peripheral chemical processing step (step S6) in the substrate processing apparatus 1 differs according to the contents of the recipe, it is possible to use the most appropriate one corresponding to each processing rotation speed. Timing output nozzle drive signal.
圖19係用以說明本發明第二實施形態的基板處理裝置401所具備的處理單元402的構成例之示意性的圖。在第二實施形態中,針對與前述第一實施形態(圖1至圖18的實施形態)的各部分共通之構成附上相同的元件符號並省略說明。 FIG. 19 is a schematic diagram for explaining a configuration example of a processing unit 402 included in a substrate processing apparatus 401 according to a second embodiment of the present invention. In the second embodiment, the same components as those in the first embodiment (the embodiment shown in FIGS. 1 to 18) are given the same reference numerals, and descriptions thereof are omitted.
處理單元402係用以使用處理液處理(頂側處理)基板W的外周部41(參照圖20等)之單元,更具體而言,處理單元402係用以使用處理液處理(頂側處理)基板W的上表面(主面)的外周區域42(參照圖20等)以及基板W的周端面44(參照圖20等)之單元。 The processing unit 402 is a unit for processing (top-side processing) the outer peripheral portion 41 (see FIG. 20 and the like) of the substrate W using a processing liquid, and more specifically, the processing unit 402 is for processing (top-side processing) using a processing liquid. A unit of an outer peripheral region 42 (see FIG. 20 and the like) of the upper surface (main surface) of the substrate W and a peripheral end face 44 (see FIG. 20 and the like) of the substrate W.
處理單元402係包含有:處理腔室4;自轉夾具(基板保持單元)5;處理液供給單元406,係用以將處理液(藥液以及清洗液)供給至被自轉夾具5保持的基板W的上表面的外周區域42;第一惰性氣體供給單元8;第二惰性氣體供給單元9;第三惰性氣體供給單元10;加熱器11;以及處理罩12。 The processing unit 402 includes: a processing chamber 4; a rotation jig (substrate holding unit) 5; and a processing liquid supply unit 406 for supplying a processing liquid (a chemical solution and a cleaning solution) to the substrate W held by the rotation jig 5. The outer peripheral region 42 of the upper surface of the substrate; the first inert gas supply unit 8; the second inert gas supply unit 9; the third inert gas supply unit 10; the heater 11; and the processing cover 12.
處理液供給單元406係包含有:處理液噴嘴419;藥液配管420,係連接至處理液噴嘴419;藥液閥421,係夾設於藥液配管420;流量調整閥(噴吹流量調整單元)501,係夾設於藥液配管420;清洗液配管422,係連接至處理液噴嘴419;清洗液閥423,係夾設於清洗液配管422;流量調整閥(噴吹流量調整單元)502,係夾設於清洗液配管422; 以及噴嘴移動機構424,係用以使處理液噴嘴419移動。雖然未圖示,但流量調整閥501以及流量調整閥502各者係包含有:閥本體,係內部設置有閥座;閥體,係用以將閥座開閉;以及致動器(actuator),係用以使閥體在開位置與閉位置之間移動。 The processing liquid supply unit 406 includes: a processing liquid nozzle 419; a chemical liquid piping 420 connected to the processing liquid nozzle 419; a chemical liquid valve 421 sandwiched between the chemical liquid piping 420; a flow regulating valve (blowing flow regulating unit) 501, is clamped to the chemical liquid pipe 420; cleaning liquid pipe 422 is connected to the processing liquid nozzle 419; cleaning liquid valve 423 is clamped to the cleaning liquid pipe 422; flow adjustment valve (blowing flow adjustment unit) 502 Is clamped to the cleaning liquid pipe 422; and the nozzle moving mechanism 424 is used to move the processing liquid nozzle 419. Although not shown, each of the flow adjustment valve 501 and the flow adjustment valve 502 includes a valve body provided with a valve seat therein, a valve body used to open and close the valve seat, and an actuator, It is used to move the valve body between the open position and the closed position.
處理液噴嘴419係例如為以連續流動的狀態噴出液體之直式噴嘴。藥液配管420被供給有來自藥液供給源的藥液。清洗液配管422被供給有來自清洗液供給源的清洗液。當在關閉清洗液閥423的狀態下開啟藥液閥421時,從設定於處理液噴嘴419的下端之處理液噴出口419a(參照圖20)噴出從藥液配管420供給至處理液噴嘴419的連續流動的藥液。此外,當在關閉藥液閥421的狀態下開啟清洗液閥423時,從處理液噴出口419a噴出從清洗液配管422供給至處理液噴嘴419的連續流動的清洗液。噴嘴移動機構424係俯視觀看時沿著通過基板W的上表面(例如上表面中央部)之軌跡使處理液噴嘴419水平地移動。噴嘴移動機構424係使處理液噴嘴419在處理位置與退避位置之間移動,該處理位置係從處理液噴嘴419噴出的處理液(藥液以及清洗液)被供給至基板W的上表面的外周區域42之位置,該退避位置係俯視觀看時處理液噴嘴419已退避至自轉夾具5的側方之位置。此外,噴嘴移動機構424係以來自處理液噴嘴419的處理液的著液位置45(參照圖20)在基板W的上表面的外周區域42中於徑方向RD移動之方式使處理液噴嘴419移動。 The processing liquid nozzle 419 is, for example, a straight nozzle that discharges liquid in a continuously flowing state. The chemical solution pipe 420 is supplied with a chemical solution from a chemical solution supply source. The cleaning liquid pipe 422 is supplied with a cleaning liquid from a cleaning liquid supply source. When the chemical liquid valve 421 is opened with the cleaning liquid valve 423 closed, the processing liquid ejection port 419a (see FIG. 20) provided at the lower end of the processing liquid nozzle 419 is ejected from the chemical liquid pipe 420 to the processing liquid nozzle 419. Continuously flowing liquid medicine. In addition, when the cleaning liquid valve 423 is opened with the chemical liquid valve 421 closed, a continuous flow of cleaning liquid supplied from the cleaning liquid pipe 422 to the processing liquid nozzle 419 is ejected from the processing liquid ejection port 419a. The nozzle moving mechanism 424 moves the processing liquid nozzle 419 horizontally along a trajectory passing through the upper surface (for example, the central portion of the upper surface) of the substrate W in a plan view. The nozzle moving mechanism 424 moves the processing liquid nozzle 419 between a processing position and a retreat position, and the processing position (processing liquid (chemical liquid and cleaning liquid) ejected from the processing liquid nozzle 419) is supplied to the outer periphery of the upper surface of the substrate W The position of the region 42 is a position where the processing liquid nozzle 419 has been retracted to the side of the rotation jig 5 when viewed from above. In addition, the nozzle moving mechanism 424 moves the processing liquid nozzle 419 so that the liquid injection position 45 (see FIG. 20) of the processing liquid from the processing liquid nozzle 419 moves in the radial direction RD in the outer peripheral region 42 of the upper surface of the substrate W. .
藥液係例如為用以蝕刻基板W或者洗淨基板W之液體。藥液亦可為包含有氫氟酸、硫酸、醋酸、硝酸、鹽酸、緩衝氫氟酸(BHF)、稀釋氫氟酸(DHF)、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH等)、有機溶劑(例如IPA等)、界面活性劑、防腐蝕劑中的至少一者之液體。清洗液係例如為去離子水(DIW),但並未限定於DIW,亦可為碳酸水、電解離子水、氫水、臭氧水以及稀釋濃度(例如10ppm至100ppm左右)的鹽酸水中的任一者。 The chemical solution is, for example, a liquid for etching the substrate W or cleaning the substrate W. The chemical solution can also include hydrofluoric acid, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, buffered hydrofluoric acid (BHF), diluted hydrofluoric acid (DHF), ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid Etc.), a liquid of at least one of an organic base (for example, TMAH, etc.), an organic solvent (for example, IPA, etc.), a surfactant, and an anticorrosive. The cleaning liquid system is, for example, deionized water (DIW), but is not limited to DIW, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm). By.
此外,處理單元402係包含有:徑方向位置感測器(各周端位置計測單元)47,係用以檢測被自轉夾具5保持之基板W的周端的徑方向RD的位置(以下簡稱為「徑方向位置」)。 In addition, the processing unit 402 includes a radial position sensor (each peripheral end position measurement unit) 47 for detecting a position in the radial direction RD of the peripheral end of the substrate W held by the rotation jig 5 (hereinafter referred to as "" Radial direction position ").
圖20係用以顯示正從配置於處理位置的處理液噴嘴419噴出處理液的狀態之剖視圖。 FIG. 20 is a sectional view showing a state where the processing liquid is being ejected from the processing liquid nozzle 419 arranged at the processing position.
基板W係在器件形成面朝向上方的狀態下被自轉夾具5(參照圖19)保持。當在處理液噴嘴419已配置於與基板W的上表面的外周區域42對向的處理位置之狀態下選擇性地開啟藥液閥421(參照圖19)以及清洗液閥423(參照圖19)時,處理液噴嘴419係從徑方向RD的內側朝外側斜下方地對基板W的上表面的外周區域42的著液位置(以下簡稱為「著液位置45」)噴出處理液(藥液或清洗液)。從徑方向RD的內側朝著液位置45噴出處理液。 The substrate W is held by the rotation jig 5 (see FIG. 19) with the device formation surface facing upward. The chemical liquid valve 421 (see FIG. 19) and the cleaning liquid valve 423 (see FIG. 19) are selectively opened in a state where the processing liquid nozzle 419 is disposed at a processing position facing the outer peripheral region 42 of the upper surface of the substrate W. At this time, the processing liquid nozzle 419 discharges a processing liquid (a chemical liquid or a chemical liquid or a liquid Washing fluid). The processing liquid is ejected toward the liquid position 45 from the inside of the radial direction RD.
基板W的上表面(器件形成面)係除了外周區域42之外皆為形成有半導體器件之器件形成區域。由於處理液噴嘴 419從徑方向RD的內側朝斜下方噴出處理液,因此能某程度抑制處理液朝屬於器件形成區域之基板W的上表面中央部飛濺。此時,來自處理液噴出口419a的處理液的噴出方向為沿著徑方向RD之方向,且為以預定角度射入至基板W的上表面之方向。射入角度θ 1係例如約30°至約80°,較佳為約45°。 The upper surface (device formation surface) of the substrate W is a device formation region in which a semiconductor device is formed except for the peripheral region 42. Since the processing liquid nozzle 419 discharges the processing liquid obliquely downward from the inside of the radial direction RD, it is possible to suppress the processing liquid from splashing toward the center portion of the upper surface of the substrate W belonging to the device formation region to some extent. At this time, the discharge direction of the processing liquid from the processing liquid discharge port 419a is a direction along the radial direction RD, and is a direction that is incident on the upper surface of the substrate W at a predetermined angle. The incidence angle θ 1 is, for example, about 30 ° to about 80 °, and preferably about 45 °.
如圖20所示,已著液至著液位置45的處理液係在著液位置45的周圍中形成處理液的液膜LF,並相對於著液位置45朝基板W的旋轉方向R及徑方向RD的外側流動。因此,於基板W的上表面的外周區域42環狀地保持有處理液。此時的處理液的液膜LF的寬度W1(以下稱為「著液位置液體寬度W1」,為著液位置45中的處理液的寬度)係成為處理寬度。藉由精度佳地控制著液位置45,能精度佳地控制處理液的液膜LF的內周端701的位置,進而能精度佳地控制著液位置液體寬度W1。 As shown in FIG. 20, the processing liquid that has been deposited to the deposition position 45 forms a liquid film LF of the processing liquid around the deposition position 45, and faces the rotation direction R and the diameter of the substrate W with respect to the deposition position 45. Flow in the direction RD. Therefore, the processing liquid is held in a ring shape in the outer peripheral region 42 of the upper surface of the substrate W. The width W1 of the liquid film LF of the processing liquid at this time (hereinafter referred to as the “liquid position liquid width W1”, which is the width of the processing liquid at the liquid position 45) is the processing width. By controlling the liquid position 45 with high accuracy, the position of the inner peripheral end 701 of the liquid film LF of the processing liquid can be controlled with high accuracy, and the liquid width W1 at the liquid position can be controlled with high accuracy.
此外,著液位置液體寬度W1(液膜LF的寬度)的寬窄(亦即處理液的液膜LF的內周端701的位置)係依存於處理旋轉速度(處理時的基板W的旋轉速度)。當處理旋轉速度快時,由於基板W的旋轉所致使之離心力增大,因此著液位置液體寬度W1變窄。另一方面,當處理旋轉速度慢時,由於基板W的旋轉所致使之離心力減少,因此著液位置液體寬度W1變寬。 In addition, the width of the liquid injection position liquid width W1 (the width of the liquid film LF) (that is, the position of the inner peripheral end 701 of the liquid film LF of the processing liquid) depends on the processing rotation speed (the rotation speed of the substrate W during processing) . When the processing rotation speed is fast, the centrifugal force increases due to the rotation of the substrate W, so the liquid width W1 at the landing position becomes narrow. On the other hand, when the processing rotation speed is slow, the centrifugal force of the substrate W is reduced due to the rotation of the substrate W, so that the liquid width W1 at the landing position becomes wider.
在第二實施形態的處理單元402中,亦是藉由自轉夾具5支撐基板W的中央部而非是支撐基板W的外周部41。 因此,會有在自轉夾具5所為之基板W的保持狀態下產生偏心之虞(參照圖4以及圖5),在此情形中,會產生配置位置周端46相對於旋轉軸線A1之徑方向位置伴隨著基板W的旋轉角度位置變化之問題。結果,如圖6所示,會有基板W的上表面的外周區域42的處理寬度在周方向的各位置產生偏差之虞。圖21係用以說明基板處理裝置401的主要部分的電性構成之方塊圖。 In the processing unit 402 of the second embodiment, the central portion of the substrate W is supported by the rotation jig 5 instead of the outer peripheral portion 41 of the substrate W. Therefore, there is a possibility that eccentricity may occur in the holding state of the substrate W which the rotation jig 5 holds (see FIGS. 4 and 5). In this case, a radial position of the peripheral position 46 of the arrangement position with respect to the rotation axis A1 may occur. There is a problem that the position of the rotation angle of the substrate W changes. As a result, as shown in FIG. 6, the processing width of the outer peripheral region 42 on the upper surface of the substrate W may be deviated from each position in the circumferential direction. FIG. 21 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 401.
控制裝置3的記憶單元52係由可電性地覆寫資料之非揮發性記憶體所構成。記憶單元52係包含有:配方記憶部54,係記憶有配方,該配方係規定針對基板W之各個處理的內容;各周端徑方向位置記憶部59,係記憶與被自轉夾具5保持的基板W的周方向的各周端位置中之相對於旋轉軸線A1為徑方向RD的位置(以下稱為「各周端徑方向位置」)有關的位置資訊;以及資訊記憶部455,係記憶旋轉速度-處理位置對應表507(第一對應關係規定資訊,參照圖22),該旋轉速度-處理位置對應表507係規定外周部處理步驟(步驟S105、步驟S106)中的基板W的旋轉速度(處理旋轉速度)與處理液噴嘴419的處理位置(著液位置45)之間的對應關係。於記憶於配方記憶部54的配方制定有外周部處理步驟(步驟S105、步驟S106)中的處理條件(例如處理液的種類(藥液、清洗液或者藥液的種類)、處理旋轉速度或者期望的處理寬度等)。 The memory unit 52 of the control device 3 is composed of a non-volatile memory that can electrically overwrite data. The memory unit 52 includes: a recipe memory unit 54 that stores a recipe that defines the content of each process for the substrate W; each peripheral end position memory unit 59 that stores the substrate held by the rotation fixture 5 Among the circumferential end positions of W in the circumferential direction, the position information about the position in the radial direction RD with respect to the rotation axis A1 (hereinafter referred to as "the circumferential end radial position"); and the information storage unit 455, which stores the rotation speed. -Processing position correspondence table 507 (first correspondence definition information, see FIG. 22), the rotation speed-processing position correspondence table 507 specifies the rotation speed (processing of the substrate W) in the outer peripheral processing step (step S105, step S106) Correspondence between the rotation speed) and the processing position (liquid contact position 45) of the processing liquid nozzle 419. The recipe memorized in the recipe memory unit 54 includes processing conditions (e.g., the type of processing liquid (medicine liquid, cleaning liquid, or the type of chemical liquid)) in the peripheral processing step (step S105, step S106), processing rotation speed, or desired. Processing width, etc.).
於控制裝置3連接有作為控制對象之自轉馬達18、噴嘴移動機構424、30、34、加熱器11的加熱源、藥液閥421、 清洗液閥423、第一氣體閥29、第二氣體閥33、第三氣體閥38以及流量調整閥501、502等。控制裝置3係控制自轉馬達18、噴嘴移動機構424、30、34以及加熱器11的動作。此外,控制裝置3係將閥(421、23、29、33、38)等予以開閉。此外,控制裝置3係調整流量調整閥501、502的開度。 The control device 3 is connected to a rotation motor 18 as a control object, nozzle moving mechanisms 424, 30, and 34, a heating source of the heater 11, a chemical liquid valve 421, a cleaning liquid valve 423, a first gas valve 29, and a second gas valve. 33. The third gas valve 38 and the flow adjustment valves 501 and 502. The control device 3 controls operations of the rotation motor 18, the nozzle moving mechanisms 424, 30, and 34, and the heater 11. In addition, the control device 3 opens and closes valves (421, 23, 29, 33, 38) and the like. The control device 3 adjusts the opening degrees of the flow rate adjustment valves 501 and 502.
此外,於控制裝置3被輸入有徑方向位置感測器47的檢測輸出。 A detection output of the radial position sensor 47 is input to the control device 3.
圖22係用以說明記憶於資訊記憶部455之旋轉速度-處理位置對應表507之圖。 FIG. 22 is a diagram for explaining the rotation speed-processing position correspondence table 507 stored in the information storage unit 455.
於資訊記憶部455之旋轉速度-處理位置對應表507規定有基板W的旋轉速度(處理旋轉速度)與處理液噴嘴419的處理位置(徑方向RD的位置)之間的對應關係,該處理液噴嘴419的處理位置係與各旋轉速度對應。藉由資訊記憶部455之旋轉速度-處理位置對應表507所規定之「處理位置」係可為處理液噴嘴419的處理位置的位置資訊,亦可為馬達的驅動值且為與該處理液噴嘴419的處理位置對應之驅動值,該馬達的驅動值係構成用以驅動處理液噴嘴419之噴嘴移動機構424。 The rotation speed-processing position correspondence table 507 of the information storage unit 455 specifies the correspondence between the rotation speed (processing rotation speed) of the substrate W and the processing position (position in the radial direction RD) of the processing liquid nozzle 419. The processing position of the nozzle 419 corresponds to each rotation speed. The "processing position" specified by the rotation speed-processing position correspondence table 507 of the information storage unit 455 can be position information of the processing position of the processing liquid nozzle 419, and can also be a drive value of the motor and the processing liquid nozzle. A driving value corresponding to the processing position of 419, and the driving value of the motor constitutes a nozzle moving mechanism 424 for driving the processing liquid nozzle 419.
一般而言,有著液位置液體寬度W1會隨著基板W的旋轉速度變慢而變寬之傾向。另一方面,有隨著處理液噴嘴419的處理位置(成為基準之處理位置)愈朝向徑方向RD的內側而使著液位置液體寬度W1愈變寬(亦即處理液於內側膨脹)之傾向。因此,只要隨著處理旋轉速度變快而將處 理液噴嘴419的處理位置(成為基準之處理位置)配置於徑方向RD中之靠內側處,即能將著液位置液體寬度W1保持於期望的寬度。旋轉速度-處理位置對應表507係以下述方式規定處理旋轉速度與處理液噴嘴419的處理位置:隨著基板W的旋轉速度變快而將處理液噴嘴419的處理位置配置於徑方向RD中之靠內側處。換言之,在旋轉速度-處理位置對應表507中,考量處理液在著液位置45中於內側膨脹來規定處理旋轉速度與處理液噴嘴419的處理位置之間的關係。 Generally, the liquid position W1 tends to become wider as the rotation speed of the substrate W becomes slower. On the other hand, as the processing position of the processing liquid nozzle 419 (the processing position serving as a reference) is more toward the inside of the radial direction RD, the liquid width W1 of the liquid landing position becomes wider (that is, the processing liquid expands on the inside). . Therefore, as long as the processing rotation speed becomes faster, the processing position of the processing liquid nozzle 419 (the processing position serving as a reference) is disposed on the inner side in the radial direction RD, and the liquid position W1 of the liquid landing position can be maintained at a desired width. The rotation speed-processing position correspondence table 507 specifies the processing rotation speed and the processing position of the processing liquid nozzle 419 in such a manner that the processing position of the processing liquid nozzle 419 is arranged in the radial direction RD as the rotation speed of the substrate W becomes faster. On the inside. In other words, in the rotation speed-processing position correspondence table 507, the relationship between the processing rotation speed and the processing position of the processing liquid nozzle 419 is specified in consideration of the expansion of the processing liquid inside the infusion position 45.
旋轉速度-處理位置對應表507係針對每個處理液的液體種類(或者膜種類)準備,於資訊記憶部455記憶有彼此不同的液體種類(或者膜種類)用的複數個旋轉速度-處理位置對應表507。 The rotation speed-processing position correspondence table 507 is prepared for each liquid type (or membrane type) of the processing liquid, and the information storage unit 455 stores a plurality of rotation speed-processing positions for different liquid types (or membrane types). Correspondence table 507.
此外,旋轉速度-處理位置對應表507係針對每個處理寬度(著液位置液體寬度W1)準備,於資訊記憶部455記憶有彼此不同的處理寬度用的複數個旋轉速度-處理位置對應表507。 In addition, the rotation speed-processing position correspondence table 507 is prepared for each processing width (impregnation position liquid width W1), and a plurality of rotation speed-processing position correspondence tables 507 are stored in the information storage unit 455 for mutually different processing widths. .
圖24係用以說明藉由處理單元402所執行之第二基板處理例之流程圖。圖24係用以說明外周部處理步驟(步驟S105、步驟S106)的內容之流程圖。圖25以及圖26係用以示意性地顯示外周部處理步驟(步驟S105、步驟S106)中的處理液噴嘴419的狀態之圖。參照圖1、圖19、圖20以及圖21至圖24說明第二基板處理例。 FIG. 24 is a flowchart illustrating a second substrate processing example executed by the processing unit 402. FIG. 24 is a flowchart for explaining the content of the processing steps (step S105, step S106) in the outer periphery. 25 and 26 are diagrams schematically showing states of the processing liquid nozzles 419 in the processing steps (steps S105 and S106) in the outer peripheral portion. A second substrate processing example will be described with reference to FIGS. 1, 19, 20, and 21 to 24.
首先,將未處理的基板W搬入至處理腔室4的內部(圖 24的步驟S101)。具體而言,使正在保持基板W之搬運機器人CR的手部H進入至處理腔室4的內部,藉此在器件形成面朝向上方的狀態下將基板W授受至自轉夾具5。 First, the unprocessed substrate W is carried into the processing chamber 4 (step S101 in FIG. 24). Specifically, the hand H of the transfer robot CR holding the substrate W is entered into the processing chamber 4, and the substrate W is transferred to the rotation jig 5 with the device formation surface facing upward.
之後,當吸附支撐基板W的下表面中央部時,藉由自轉夾具5保持基板W(基板保持步驟,圖24的步驟S102)。在本實施形態中,未進行使用了定中心機構之基板W相對於自轉夾具5之中心對準。 After that, when the lower surface center portion of the supporting substrate W is sucked, the substrate W is held by the rotation jig 5 (substrate holding step, step S102 of FIG. 24). In this embodiment, the alignment of the substrate W using the centering mechanism with respect to the center of the rotation jig 5 is not performed.
基板W被自轉夾具5保持後,控制裝置3係控制自轉馬達18使基板W開始旋轉(圖24的步驟S103)。 After the substrate W is held by the rotation jig 5, the control device 3 controls the rotation motor 18 to start the rotation of the substrate W (step S103 in FIG. 24).
接著,控制裝置3係執行各周端徑方向位置計測步驟(圖24的步驟S104),該各周端徑方向位置計測步驟係計測被自轉夾具5保持的基板W的各周端徑方向位置。由於各周端徑方向位置計測步驟(圖24的步驟S104)係與圖12所示的各周端徑方向位置計測步驟(步驟S4)同等,因此省略詳細的說明。 Next, the control device 3 executes each peripheral end radial direction position measurement step (step S104 in FIG. 24), and each peripheral end radial direction position measurement step measures each peripheral end radial direction position of the substrate W held by the rotation jig 5. Since the steps of measuring the positions in the circumferential end diameter direction (step S104 in FIG. 24) are the same as the steps of measuring the positions in the circumferential end diameter direction (step S4) shown in FIG. 12, detailed description is omitted.
在各周端徑方向位置計測步驟(步驟S104)結束後,控制裝置3係執行外周部藥液處理步驟(外周部處理步驟,圖24的步驟S105),該外周部藥液處理步驟係使用藥液處理基板W的外周部41。外周部藥液處理步驟(步驟S105)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1300rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部藥液處理步驟(步驟S105)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的藥液的著液位置45追隨伴隨著基 板W的旋轉角度位置之配置位置周端46的徑方向位置變化於徑方向RD往復移動。 After the peripheral position measurement step (step S104) is completed, the control device 3 executes a peripheral chemical solution processing step (peripheral processing step, step S105 in FIG. 24), and the peripheral chemical solution processing step uses a drug The outer peripheral portion 41 of the liquid processing substrate W. The peripheral chemical solution processing step (step S105) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1300 rpm). In addition, the control device 3 executes a liquid-reciprocating position reciprocating movement step in parallel with the peripheral chemical liquid processing step (step S105). The liquid-impacting position 45 changes in the radial direction position of the peripheral position 46 following the arrangement position accompanying the rotation angle position of the substrate W and reciprocates in the radial direction RD.
一併參照圖24,說明外周部藥液處理步驟(步驟S105)。 Referring to Fig. 24 together, a procedure for processing the peripheral chemical solution (step S105) will be described.
在外周部藥液處理步驟(步驟S105)中,控制裝置3的運算單元51係參照記憶於配方記憶部54(參照圖22)的配方,取得外周部藥液處理步驟(步驟S105)中的基板W的旋轉速度(處理旋轉速度)。接著,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(圖24的步驟S131)。 In the peripheral chemical solution processing step (step S105), the arithmetic unit 51 of the control device 3 refers to the recipe memorized in the recipe memory section 54 (see FIG. 22) to obtain the substrate in the peripheral chemical solution processing step (step S105). W rotation speed (processing rotation speed). Next, the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotation speed (step S131 in FIG. 24).
此外,控制裝置3的運算單元51係參照記憶於配方記憶部54(參照圖22)的配方,取得在外周部藥液處理步驟(步驟S105)中所使用之藥液的種類(處理液的種類)以及外周部藥液處理步驟(步驟S105)中所需的處理寬度。接著,運算單元51係參照記憶於資訊記憶部455的旋轉速度-處理位置對應表507(參照圖22)中之與本次藥液的種類以及/或者本次的處理寬度對應之旋轉速度-處理位置對應表507,決定與經過設定的處理旋轉速度對應之處理液噴嘴419的處理位置(徑方向RD的位置)(圖24的步驟S132)。接著,控制裝置3係將處理液噴嘴419配置於經過決定的處理位置(圖24的步驟S133)。 In addition, the arithmetic unit 51 of the control device 3 refers to the recipe memorized in the recipe memory unit 54 (see FIG. 22), and obtains the type of the medicinal solution (the type of the treating solution) used in the peripheral portion medicinal solution processing step (step S105). ) And the processing width required in the peripheral chemical solution processing step (step S105). Next, the arithmetic unit 51 refers to the rotation speed-processing corresponding to the type of the medicinal solution and / or the current processing width in the rotation speed-processing position correspondence table 507 (see FIG. 22) stored in the information storage unit 455. The position correspondence table 507 determines the processing position (the position in the radial direction RD) of the processing liquid nozzle 419 corresponding to the set processing rotation speed (step S132 in FIG. 24). Next, the control device 3 arranges the processing liquid nozzle 419 at the determined processing position (step S133 in FIG. 24).
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉清洗液閥423一邊開啟藥液閥421,藉此從處理液噴嘴419的處理液噴出口419a開始噴出藥液(圖24的步 驟S134)。在開始噴出處理液之前的狀態中,流量調整閥501係被調整至預先設定的開度。藉此,如圖20所示,藥液著液至基板W的上表面的外周區域42並形成有藥液的液膜LF。此時的藥液的液膜LF的寬度(著液位置液體寬度W1)係與預先設定的寬度整合。因此,能良好地控制著液位置液體寬度W1。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the chemical liquid valve 421 while closing the cleaning liquid valve 423, thereby starting to eject the chemical liquid from the processing liquid ejection port 419a of the processing liquid nozzle 419 (FIG. Step S134). In a state before the processing liquid is started to be discharged, the flow rate adjustment valve 501 is adjusted to a predetermined opening degree. Thereby, as shown in FIG. 20, the chemical solution is deposited on the outer peripheral region 42 of the upper surface of the substrate W, and a liquid film LF of the chemical solution is formed. The width of the liquid film LF of the chemical solution at this time (the liquid-impacting position liquid width W1) is integrated with a predetermined width. Therefore, the liquid position W1 of the liquid position can be well controlled.
控制裝置3係開始執行前述著液位置往復移動步驟(步驟S135)。具體而言,控制裝置3係依據各周端徑方向位置記憶部59所記憶的資訊(振幅、週期以及相位(各周端徑方向位置計測步驟(步驟S104)的計測結果)),以著液位置45會以與配置位置周端46的位置變化相同的振幅、相同的週期以及相同的相位移動之方式使處理液噴嘴419往復移動。此外,所謂「使著液位置45往復移動」並非指將基板W作為基準之往復移動,而是指將處於靜止狀態的物體(例如處理腔室4的隔壁13)作為基準之往復移動。 The control device 3 starts to perform the aforementioned step of reciprocating the impact position (step S135). Specifically, the control device 3 is based on the information (amplitude, period, and phase (measurement result of each peripheral end radial direction position measurement step (step S104))) stored in each peripheral end radial direction position storage unit 59, so as to inject liquid. The position 45 causes the processing liquid nozzle 419 to reciprocate with the same amplitude, the same period, and the same phase movement as the position change of the position peripheral end 46. In addition, the "reciprocating the liquid-injection position 45" does not mean reciprocating using the substrate W as a reference, but means reciprocating using a stationary object (for example, the partition wall 13 of the processing chamber 4) as a reference.
此時,將經過決定的處理液噴嘴419的處理位置作為基準位準使處理液噴嘴419往復移動。亦即,並行地進行著液位置往復移動步驟(圖24的步驟S135)與內周端位置調整步驟(處理液噴嘴419的處理位置的調整所伴隨之處理液的液膜LF的內周端701的位置的控制)。具體而言,控制裝置3的運算單元51係將旋轉速度-處理位置對應表507所規定的處理位置作為基準來修正依據記憶於各周端徑方向位置記憶部59的資訊(振幅、週期以及相位)所算出之噴嘴驅動訊號徑方向的位置資訊,並將修正後的驅動訊號輸 入至噴嘴移動機構424,藉此使處理液噴嘴419往復移動。 At this time, the processing liquid nozzle 419 is reciprocated using the determined processing position of the processing liquid nozzle 419 as a reference level. That is, the liquid-receiving position reciprocating step (step S135 in FIG. 24) and the inner peripheral end position adjusting step (the adjustment of the processing position of the processing liquid nozzle 419 by the processing liquid nozzle 419 are performed in parallel with the inner peripheral end 701 of the liquid Position control). Specifically, the arithmetic unit 51 of the control device 3 uses the processing position specified in the rotation speed-processing position correspondence table 507 as a reference to correct the information (amplitude, period, and phase) based on the information memorized in the position storage unit 59 in each circumferential direction. ) The position information in the diameter direction of the nozzle driving signal calculated, and the corrected driving signal is input to the nozzle moving mechanism 424, so that the processing liquid nozzle 419 is reciprocated.
如圖25以及圖26所示,配置位置周端46係伴隨著偏心中的基板W的旋轉而在圖25以實線所示的位置與在圖26以實線所示的位置之間移動。此時,能將著液位置45與配置位置周端46之間的徑方向RD的距離保持一定,亦即能將處理液的液膜LF的內周端701的位置與配置位置周端46之間的徑方向RD的距離保持一定。藉此,能不受基板W的偏心狀態影響地將著液位置液體寬度W1保持於與基板W的處理旋轉速度對應之一定的寬度。結果,如圖18所示,能高度地保持基板W的上表面的外周區域42中的處理寬度的均勻性。 As shown in FIGS. 25 and 26, the arrangement position peripheral end 46 moves between the position shown by the solid line in FIG. 25 and the position shown by the solid line in FIG. 26 as the substrate W is rotated eccentrically. At this time, the distance in the radial direction RD between the landing position 45 and the placement position peripheral end 46 can be kept constant, that is, the position of the inner peripheral end 701 of the liquid film LF of the processing liquid and the placement position peripheral end 46 can be maintained. The distance in the radial direction RD is kept constant. This makes it possible to maintain the liquid-impacting position liquid width W1 at a constant width corresponding to the processing rotation speed of the substrate W without being affected by the eccentric state of the substrate W. As a result, as shown in FIG. 18, the uniformity of the processing width in the outer peripheral region 42 of the upper surface of the substrate W can be highly maintained.
當從開始噴出藥液經過預先設定的期間時(在圖24的步驟S136中為是),控制裝置3係關閉藥液閥421。藉此,停止(結束)從處理液噴嘴419噴出藥液(圖24的步驟S137)。 When a predetermined period has elapsed from the start of ejection of the chemical solution (YES in step S136 of FIG. 24), the control device 3 closes the chemical solution valve 421. Thereby, the ejection of the chemical liquid from the processing liquid nozzle 419 is stopped (finished) (step S137 in FIG. 24).
此外,在外周部藥液處理步驟(步驟S105)中,加熱器11的熱源被開啟,藉由加熱器11加熱基板W的下表面的外周區域43。藉此,提高外周部藥液處理的處理速度。此外,在外周部藥液處理步驟(步驟S105)中,藉由從位於處理位置的氣體噴出噴嘴27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。藉由該放射狀氣流保護屬於器件形成區域之基板W的上表面中央部。此外,在外周部藥液處理步驟(步驟S105)中,在基板的上表面的外周區域42中從位於設定在與處理液噴 嘴419的處理位置不同的周方向位置之處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。能藉由該惰性氣體的噴吹在基板W的周方向的複數個位置控制基板W的上表面的外周區域42中的藥液的處理寬度。此外,在外周部藥液處理步驟(步驟S105)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。能藉由該惰性氣體的噴吹防止藥液繞入至基板W的下表面。 In addition, in the peripheral chemical processing step (step S105), the heat source of the heater 11 is turned on, and the outer peripheral region 43 of the lower surface of the substrate W is heated by the heater 11. Thereby, the processing speed of the chemical processing of the peripheral part is improved. In addition, in the peripheral chemical processing step (step S105), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection nozzle 27 located at the processing position. . The central portion of the upper surface of the substrate W belonging to the device formation region is protected by this radial airflow. Further, in the peripheral chemical solution processing step (step S105), the upper peripheral gas in the peripheral region 42 on the upper surface of the substrate is located at a processing position set at a peripheral position different from the processing position of the processing liquid nozzle 419. The nozzle 31 injects an inert gas at an injection position of the outer peripheral region 42 on the upper surface of the substrate W. The processing width of the chemical solution in the outer peripheral region 42 on the upper surface of the substrate W can be controlled by the blowing of the inert gas at a plurality of positions in the circumferential direction of the substrate W. In addition, in the outer peripheral chemical solution processing step (step S105), an inert gas is ejected from the lower outer peripheral gas nozzle 36 located at the processing position to the injection position of the outer peripheral region 43 on the lower surface of the substrate W. The injecting of the inert gas can prevent the chemical solution from getting into the lower surface of the substrate W.
在外周部藥液處理步驟(步驟S105)結束後,接著,控制裝置3係執行外周部清洗液處理步驟(外周部處理步驟,圖24的步驟S106),該外周部清洗液處理步驟係使用清洗液處理基板W的外周部41。外周部清洗液處理步驟(步驟S106)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1300rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部清洗液處理步驟(步驟S106)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的清洗液的著液位置45追隨伴隨著基板W的旋轉角度位置之配置位置周端46的徑方向位置變化於徑方向往復RD往復移動。一併參照圖24,說明外周部清洗液處理步驟(步驟S106)。 After the peripheral chemical solution processing step (step S105) is completed, the control device 3 executes the peripheral cleaning solution processing step (peripheral processing step, step S106 in FIG. 24), and the peripheral cleaning solution processing step uses cleaning The outer peripheral portion 41 of the liquid processing substrate W. The outer peripheral cleaning liquid processing step (step S106) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1300 rpm). In addition, the control device 3 executes a liquid-reciprocating position reciprocating movement step in parallel with the peripheral cleaning liquid processing step (step S106). The liquid-impeding position 45 follows the arrangement position of the peripheral position 46 accompanying the rotation angle position of the substrate W. The radial position changes back and forth in the radial direction RD. Referring to FIG. 24 together, the outer peripheral cleaning liquid processing step (step S106) will be described.
在外周部清洗液處理步驟(步驟S106)中,控制裝置3的運算單元51係參照記憶於配方記憶部54(參照圖22)的配方,取得外周部清洗液處理步驟(步驟S106)中的基板W的旋轉速度(處理旋轉速度)。接著,控制裝置3係控制自轉 馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(步驟S131)。 In the peripheral cleaning solution processing step (step S106), the arithmetic unit 51 of the control device 3 refers to the recipe memorized in the recipe storage section 54 (see FIG. 22) to obtain the substrate in the peripheral cleaning solution processing step (step S106). W rotation speed (processing rotation speed). Next, the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotation speed (step S131).
此外,在外周部清洗液處理步驟(步驟S106)中,藉由從位於處理位置的氣體噴出噴嘴27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。此外,在外周部清洗液處理步驟(步驟S106)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。此外,在外周部清洗液處理步驟(步驟S106)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。在外周部清洗液處理步驟(步驟S106)中,可將加熱器11的熱源開啟且藉由加熱器11加熱基板W的下表面的外周區域43,亦可不加熱基板W的下表面的外周區域43。 In the outer peripheral cleaning liquid processing step (step S106), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection nozzle 27 located at the processing position. . Further, in the outer peripheral cleaning liquid processing step (step S106), an inert gas is sprayed from the upper outer peripheral gas nozzle 31 located at the processing position to the injection position of the outer peripheral region 42 on the upper surface of the substrate W. In addition, in the outer peripheral cleaning liquid processing step (step S106), an inert gas is ejected from the lower outer peripheral gas nozzle 36 located at the processing position to the injection position of the outer peripheral region 43 on the lower surface of the substrate W. In the outer peripheral cleaning liquid processing step (step S106), the heat source of the heater 11 may be turned on and the outer peripheral region 43 of the lower surface of the substrate W may be heated by the heater 11 or the outer peripheral region 43 of the lower surface of the substrate W may not be heated. .
之後,控制裝置3係控制噴嘴移動機構424將處理液噴嘴419返回至自轉夾具5的側方的退避位置。 After that, the control device 3 controls the nozzle moving mechanism 424 to return the processing liquid nozzle 419 to the side retracted position of the rotation jig 5.
接著,進行使基板W乾燥之旋乾(圖24的步驟S507)。具體而言,控制裝置3係控制自轉馬達18使基板W加速至比各個處理步驟S102至步驟S106中的旋轉速度還高之乾燥旋轉速度(例如數千rpm),並使基板W以該乾燥旋轉速度旋轉。藉此,大的離心力施加至基板W上的液體,附著於基板W的外周部的液體係被甩離至基板W的周圍。如此,從基板W的外周部去除液體而使基板W的外周部乾燥。 Next, spin-drying is performed to dry the substrate W (step S507 in FIG. 24). Specifically, the control device 3 controls the rotation motor 18 to accelerate the substrate W to a drying rotation speed (for example, thousands of rpm) higher than the rotation speed in each of the processing steps S102 to S106, and causes the substrate W to rotate at the drying speed. Speed rotation. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid system adhered to the outer peripheral portion of the substrate W is thrown away from the periphery of the substrate W. In this manner, the liquid is removed from the outer peripheral portion of the substrate W, and the outer peripheral portion of the substrate W is dried.
當從基板W開始高速旋轉經過預定期間時,控制裝置3係藉由控制自轉馬達18而停止自轉夾具5所為之基板W的旋轉。 When the high-speed rotation from the substrate W has passed for a predetermined period, the control device 3 stops the rotation of the substrate W for the rotation jig 5 by controlling the rotation motor 18.
之後,從處理腔室4內搬出基板W(圖24的步驟S108)。具體而言,控制裝置3係使搬運機器人CR的手部進入至處理腔室4的內部。接著,控制裝置3係使搬運機器人CR的手部保持自轉夾具5上的基板W。之後,控制裝置3係使搬運機器人CR的手部從處理腔室4內退避。藉此,從處理腔室4搬出處理後的基板W。 After that, the substrate W is carried out from the processing chamber 4 (step S108 in FIG. 24). Specifically, the control device 3 allows the hand of the transfer robot CR to enter the processing chamber 4. Next, the control device 3 holds the substrate W on the rotation jig 5 by the hand of the transfer robot CR. After that, the control device 3 retracts the hand of the transfer robot CR from the processing chamber 4. Thereby, the processed substrate W is carried out from the processing chamber 4.
藉此,依據第二實施形態,處理液的液膜LF的內周端701的位置係依存於基板W的旋轉速度。在外周部處理步驟(步驟S105、步驟S106)中,因應基板W的旋轉速度(處理旋轉速度)調整處理液噴嘴419中之成為基準的處理位置(內周端位置調整步驟的執行),藉此能將處理液的液膜LF的內周端701的位置調整至與外周部處理步驟(步驟S105、步驟S106)中的基板W的旋轉速度(處理旋轉速度)對應之位置。在此情形中,亦可將著液位置液體寬度W1調整至適合處理旋轉速度之寬度。藉此,能不受基板W的旋轉速度影響而精密地控制基板W的上表面的外周區域42中的處理寬度。 Accordingly, according to the second embodiment, the position of the inner peripheral end 701 of the liquid film LF of the processing liquid depends on the rotation speed of the substrate W. In the outer peripheral processing steps (steps S105 and S106), the reference processing position (the execution of the inner peripheral end position adjustment step) in the processing liquid nozzle 419 is adjusted in accordance with the rotation speed (processing rotation speed) of the substrate W, whereby The position of the inner peripheral end 701 of the liquid film LF of the processing liquid can be adjusted to a position corresponding to the rotation speed (processing rotation speed) of the substrate W in the outer peripheral processing step (step S105, step S106). In this case, the liquid width W1 at the landing position can also be adjusted to a width suitable for processing the rotation speed. This makes it possible to precisely control the processing width in the outer peripheral region 42 of the upper surface of the substrate W without being affected by the rotation speed of the substrate W.
接著,說明第三實施形態。圖27係用以說明第三形態中之記憶於資訊記憶部55之旋轉速度-噴吹流量對應表(第二對應關係規定資訊)607之圖。 Next, a third embodiment will be described. FIG. 27 is a diagram for explaining a rotation speed-blow flow correspondence table (second correspondence relationship specification information) 607 stored in the information storage unit 55 in the third embodiment.
於旋轉速度-噴吹流量對應表607規定有外周部處理 步驟(步驟S105、步驟S106)中的基板W的旋轉速度(處理旋轉速度)與從處理液噴嘴419噴出至著液位置45的處理液的噴出流量之間的對應關係,該處理液的噴出流量係與各旋轉速度對應。藉由旋轉速度-噴吹流量對應表607所規定的「處理液的噴出流量」係可為噴出流量,亦可為流量調整閥502的開度。 The rotation speed-blowing flow rate correspondence table 607 specifies the rotation speed (processing rotation speed) of the substrate W in the peripheral processing steps (steps S105 and S106) and the processing liquid ejected from the processing liquid nozzle 419 to the landing position 45. The corresponding relationship between the ejection flow rates of the treatment liquid corresponds to the respective rotation speeds. The "discharge flow rate of the processing liquid" specified in the rotation speed-injection flow rate correspondence table 607 may be the discharge flow rate or the opening degree of the flow rate adjustment valve 502.
一般而言,有著液位置液體寬度W1會隨著基板W的旋轉速度變慢而變寬之傾向。另一方面,有隨著朝向著液位置45之處理液的噴出流變成大流量而使著液位置液體寬度W1愈變寬(亦即處理液於內側膨脹)之傾向。因此,只要隨著處理旋轉速度變快而使噴出流量增大,即能將著液位置液體寬度W1保持於期望的寬度。旋轉速度-噴吹流量對應表607係以隨著基板W的旋轉速度變快而增大噴出流量之方式規定處理旋轉速度以及與各處理旋轉速度對應之處理液的噴出流量。換言之,在旋轉速度-噴吹流量對應表607中,考量處理液在著液位置45中於內側膨脹來規定處理旋轉速度與處理液的噴出流量之間的關係。 Generally, the liquid position W1 tends to become wider as the rotation speed of the substrate W becomes slower. On the other hand, as the discharge flow of the treatment liquid toward the liquid position 45 becomes a large flow rate, the liquid width W1 of the liquid injection position tends to become wider (that is, the treatment liquid expands inside). Therefore, as long as the discharge flow rate is increased as the processing rotation speed becomes faster, the liquid width W1 at the landing position can be maintained at a desired width. The rotation speed-blow flow rate correspondence table 607 specifies the processing rotation speed and the discharge flow rate of the processing liquid corresponding to each processing rotation speed so that the discharge flow rate increases as the rotation speed of the substrate W increases. In other words, in the rotation speed-blow flow rate correspondence table 607, the relationship between the processing rotation speed and the discharge flow rate of the processing liquid is determined by considering that the processing liquid expands inside in the injecting position 45.
旋轉速度-噴吹流量對應表607係針對每個處理液的液體種類(或者膜種類)準備,於資訊記憶部455記憶有彼此不同的液體種類(或者膜種類)用的複數個旋轉速度-噴吹流量對應表607。 The rotation speed-blowing flow rate correspondence table 607 is prepared for each liquid type (or membrane type) of the processing liquid, and the information storage unit 455 stores a plurality of rotation speed-spray for different liquid types (or membrane types). Blow flow corresponds to table 607.
此外,旋轉速度-噴吹流量對應表607係針對每個處理寬度(著液位置液體寬度W1)準備,於資訊記憶部455記憶有彼此不同的處理寬度用的複數個旋轉速度-噴吹流量 對應表607。 In addition, the rotation speed-injection flow rate correspondence table 607 is prepared for each processing width (injection position liquid width W1), and the information storage unit 455 stores a plurality of rotation speed-injection flow rates for processing widths different from each other. Table 607.
圖28係用以說明第三實施形態的第三基板處理例的外周部處理步驟(步驟S105、步驟S106)的內容之流程圖。第三實施形態的第三基板處理例係在外周部處理步驟(步驟S105、步驟S106)中與第二實施形態的第二基板處理例不同。針對第三基板處理例的外周部處理步驟(步驟S105、步驟S106),僅說明與第二基板處理例不同的部分。 FIG. 28 is a flowchart for explaining the content of the processing steps (steps S105 and S106) in the outer peripheral portion of the third substrate processing example of the third embodiment. The third substrate processing example of the third embodiment is different from the second substrate processing example of the second embodiment in the outer peripheral processing steps (steps S105 and S106). The processing steps (steps S105 and S106) in the peripheral portion of the third substrate processing example will be described only with respect to the portions different from the second substrate processing example.
在外周部藥液處理步驟(步驟S105)中,控制裝置3的運算單元51係參照記憶於配方記憶部54(參照圖22)的配方,取得外周部藥液處理步驟(步驟S105)中的基板W的旋轉速度(處理旋轉速度)。接著,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(圖28的步驟S140)。此外,控制裝置3係將處理液噴嘴419配置於上表面的處理位置(圖20所示的位置)(圖28的步驟S141)。 In the peripheral chemical solution processing step (step S105), the arithmetic unit 51 of the control device 3 refers to the recipe memorized in the recipe memory section 54 (see FIG. 22) to obtain the substrate in the peripheral chemical solution processing step (step S105). W rotation speed (processing rotation speed). Next, the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotation speed (step S140 in FIG. 28). In addition, the control device 3 arranges the processing liquid nozzle 419 at the processing position (the position shown in FIG. 20) on the upper surface (step S141 in FIG. 28).
此外,控制裝置3的運算單元51係參照記憶於資訊記憶部455的旋轉速度-噴吹流量對應表607(參照圖27)中之與本次藥液的種類以及/或者本次的處理寬度對應之旋轉速度-噴吹流量對應表607,決定與經過設定的處理旋轉速度對應之藥液的噴出流量(處理液噴嘴419的噴出流量)(圖28的步驟S142)。接著,控制裝置3係控制流量調整閥501,以從處理液噴出口419a噴出經過決定的噴出流量的藥液之方式調整流量調整閥501的開度(圖28的步驟S143)。 In addition, the arithmetic unit 51 of the control device 3 refers to the rotation speed-injection flow rate correspondence table 607 (see FIG. 27) stored in the information storage unit 455 corresponding to the type of the chemical solution and / or the processing width of the current time. The rotation speed-injection flow rate correspondence table 607 determines the discharge flow rate (discharge flow rate of the treatment liquid nozzle 419) of the chemical liquid corresponding to the set processing rotation speed (step S142 in FIG. 28). Next, the control device 3 controls the flow rate adjustment valve 501 to adjust the opening degree of the flow rate adjustment valve 501 so that the chemical liquid having the determined discharge flow rate is discharged from the processing liquid discharge port 419a (step S143 in FIG. 28).
當基板W的旋轉達至處理旋轉速度時,控制裝置3係 一邊關閉清洗液閥423一邊開啟藥液閥421,藉此從處理液噴嘴419的處理液噴出口419a開始噴出藥液(圖28的步驟S144)。藉此,如圖20所示,藥液著液至基板W的上表面的外周區域42並形成有藥液的液膜LF。此時的藥液的液膜LF的寬度(著液位置液體寬度W1)係與預先設定的寬度整合。因此,能良好地控制著液位置液體寬度W1。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the chemical liquid valve 421 while closing the cleaning liquid valve 423, thereby starting to eject the chemical liquid from the processing liquid ejection port 419a of the processing liquid nozzle 419 (FIG. 28 Step S144). Thereby, as shown in FIG. 20, the chemical solution is deposited on the outer peripheral region 42 of the upper surface of the substrate W, and a liquid film LF of the chemical solution is formed. The width of the liquid film LF of the chemical solution at this time (the liquid-impacting position liquid width W1) is integrated with a predetermined width. Therefore, the liquid position W1 of the liquid position can be well controlled.
如圖12以及圖13所示,控制裝置3係開始執行著液位置往復移動步驟(圖28的步驟S145)。著液位置往復移動步驟(步驟S145)係與圖24的步驟S135著液位置往復移動步驟同等的步驟。 As shown in FIG. 12 and FIG. 13, the control device 3 starts to execute the step of reciprocating the impact position (step S145 in FIG. 28). The step of reciprocating the landing position (step S145) is the same step as the step of reciprocating the landing position in step S135 of FIG. 24.
當從開始噴出藥液經過預先設定的期間時(在圖28的步驟S146中為是),控制裝置3係關閉藥液閥421。藉此,停止(結束)從處理液噴嘴419噴出藥液(圖28的步驟S147)。 When a predetermined period of time has elapsed from the start of ejection of the chemical solution (YES in step S146 of FIG. 28), the control device 3 closes the chemical solution valve 421. Thereby, the ejection of the chemical liquid from the processing liquid nozzle 419 is stopped (finished) (step S147 in FIG. 28).
此外,與前述第二實施形態的情形同樣地,在外周部藥液處理步驟(步驟S105)中,進行加熱器11所為之加熱,藉由從氣體噴出噴嘴27所噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流,從上外周部氣體噴嘴31對基板W的上表面的外周區域42噴吹惰性氣體,且從下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。 In addition, as in the case of the second embodiment described above, in the peripheral chemical processing step (step S105), the heater 11 is heated, and the inert gas ejected from the gas ejection nozzle 27 is applied to the substrate W. Radial airflow is formed from the central portion toward the outer peripheral portion 41, inert gas is sprayed from the upper outer peripheral gas nozzle 31 to the outer peripheral region 42 of the upper surface of the substrate W, and the lower peripheral gas nozzle 36 is directed toward the substrate W The injecting gas is ejected from the blowing position of the outer peripheral region 43 of the lower surface.
在外周部清洗液處理步驟(步驟S106)中,控制裝置3的運算單元51係參照記憶於配方記憶部54(參照圖22)的配方,取得外周部清洗液處理步驟(步驟S106)中的基板W的 旋轉速度(處理旋轉速度)。接著,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(圖28的步驟S141)。此外,控制裝置3係將處理液噴嘴419配置於處理位置(圖20所示的位置)(圖28的步驟S141)。 In the peripheral cleaning solution processing step (step S106), the arithmetic unit 51 of the control device 3 refers to the recipe memorized in the recipe storage section 54 (see FIG. 22) to obtain the substrate in the peripheral cleaning solution processing step (step S106). W rotation speed (processing rotation speed). Next, the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotation speed (step S141 in FIG. 28). In addition, the control device 3 arranges the processing liquid nozzle 419 at a processing position (the position shown in FIG. 20) (step S141 in FIG. 28).
此外,控制裝置3的運算單元51係參照記憶於資訊記憶部455的旋轉速度-噴吹流量對應表607(參照圖27)中之與清洗液以及/或者本次的處理寬度對應之旋轉速度-噴吹流量對應表607,決定與經過設定的處理旋轉速度對應之處理液的噴出流量(處理液噴嘴419的噴出流量)(圖28的步驟S142)。接著,控制裝置3係控制流量調整閥502,以從處理液噴出口419a噴出經過決定的噴出流量的清洗液之方式調整流量調整閥502的開度(圖28的步驟S143)。 In addition, the calculation unit 51 of the control device 3 refers to the rotation speed corresponding to the cleaning liquid and / or the current processing width in the rotation speed-blow flow rate correspondence table 607 (see FIG. 27) stored in the information storage unit 455- The injection flow rate correspondence table 607 determines the discharge flow rate of the processing liquid (the discharge flow rate of the processing liquid nozzle 419) corresponding to the set processing rotation speed (step S142 in FIG. 28). Next, the control device 3 controls the flow rate adjustment valve 502 to adjust the opening degree of the flow rate adjustment valve 502 so that the cleaning liquid having the determined discharge flow rate is discharged from the processing liquid discharge port 419a (step S143 in FIG. 28).
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉藥液閥421一邊開啟清洗液閥423,藉此從處理液噴嘴419的處理液噴出口419a開始噴出清洗液(圖28的步驟S144)。藉此,如圖20所示,清洗液著液至基板W的上表面的外周區域42並形成有清洗液的液膜LF。此時的清洗液的液膜LF的寬度(著液位置液體寬度W1)係與預先設定的寬度整合。因此,能良好地控制著液位置液體寬度W1。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the cleaning liquid valve 423 while closing the chemical liquid valve 421, thereby starting to spray the cleaning liquid from the processing liquid ejection port 419a of the processing liquid nozzle 419 (FIG. 28 Step S144). Thereby, as shown in FIG. 20, the cleaning liquid is deposited on the outer peripheral region 42 of the upper surface of the substrate W, and a liquid film LF of the cleaning liquid is formed. At this time, the width of the liquid film LF of the cleaning liquid (the liquid-impacting position liquid width W1) is integrated with a predetermined width. Therefore, the liquid position W1 of the liquid position can be well controlled.
如圖12以及圖13所示,控制裝置3係開始執行著液位置往復移動步驟(圖28的步驟S145)。著液位置往復移動步驟(圖28的步驟S145)係與圖24的步驟S135著液位置往復移動步驟同等的步驟。 As shown in FIG. 12 and FIG. 13, the control device 3 starts to execute the step of reciprocating the impact position (step S145 in FIG. 28). The step of reciprocating the landing position (step S145 in FIG. 28) is a step equivalent to the step of reciprocating the landing position in step S135 of FIG. 24.
當從開始噴出清洗液經過預先設定的期間時(在圖28的步驟S146中為是),控制裝置3係關閉清洗液閥423。藉此,停止(結束)從處理液噴嘴419噴出清洗液(圖28的步驟S147)。 When a predetermined period has elapsed from the start of the discharge of the cleaning liquid (YES in step S146 of FIG. 28), the control device 3 closes the cleaning liquid valve 423. Thereby, the discharge of the cleaning liquid from the processing liquid nozzle 419 is stopped (finished) (step S147 in FIG. 28).
此外,在外周部清洗液處理步驟(步驟S106)中,藉由從氣體噴出噴嘴27所噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流,從上外周部氣體噴嘴31對基板W的上表面的外周區域42噴吹惰性氣體,且從下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。加熱器11所為之基板W的下表面的外周區域43的加熱係可進行亦可不進行。 In the outer peripheral cleaning liquid processing step (step S106), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection nozzle 27, from above. The outer peripheral gas nozzle 31 blows an inert gas to the outer peripheral region 42 of the upper surface of the substrate W, and sprays the inert gas from the injection position of the lower outer peripheral gas nozzle 36 to the outer peripheral region 43 of the lower surface of the substrate W. The heating of the outer peripheral region 43 of the lower surface of the substrate W on which the heater 11 is formed may or may not be performed.
藉由上述,依據第三實施形態,因應基板W的處理旋轉速度調整從處理液噴嘴419所噴出的處理液的噴出流量,藉此能將處理液的液膜LF的內周端701的位置調整至與外周部處理步驟(步驟S105、步驟S106)中的處理旋轉速度對應之位置。亦可藉由調整處理液的液膜LF的內周端701的位置而將著液位置液體寬度W1調整至適合處理旋轉速度之寬度。因此,不論基板W的旋轉速度為何,皆能精密地控制著液位置液體寬度W1。藉此,能不受基板W的旋轉速度影響而精密地控制基板W的上表面的外周區域42中的處理寬度。 As described above, according to the third embodiment, the position of the inner peripheral end 701 of the liquid film LF of the processing liquid can be adjusted according to the processing flow speed of the substrate W by adjusting the discharge flow rate of the processing liquid sprayed from the processing liquid nozzle 419. To the position corresponding to the processing rotation speed in the outer peripheral portion processing step (step S105, step S106). By adjusting the position of the inner peripheral end 701 of the liquid film LF of the processing liquid, the liquid injection position liquid width W1 can be adjusted to a width suitable for the processing rotation speed. Therefore, regardless of the rotation speed of the substrate W, the liquid position W1 at the liquid position can be precisely controlled. This makes it possible to precisely control the processing width in the outer peripheral region 42 of the upper surface of the substrate W without being affected by the rotation speed of the substrate W.
圖29以及圖30係用以示意性地顯示第三實施形態的第四基板處理例的外周部處理步驟(步驟S105、步驟S106) 中的處理液噴嘴419的狀態之圖。 FIG. 29 and FIG. 30 are diagrams schematically showing the states of the processing liquid nozzles 419 in the processing steps (steps S105 and S106) of the peripheral portion of the fourth substrate processing example of the third embodiment.
本第四基板處理例與前述第三基板處理例的差異點在於:在外周部處理步驟(步驟S105、步驟S106)中,不進行著液位置往復移動步驟(處理液噴嘴419的往復移動),而是使來自處理液噴嘴419的處理液的噴出流量變化,藉此使處理液的液膜LF的內周端701追隨配置位置周端46的位置變化往復移動。配置位置周端46係伴隨著偏心中的基板W的旋轉而在圖29以實線所示的位置(圖30以虛線所示的位置)與在圖30以實線所示的位置之間移動。在此情形中,控制裝置3係依據記憶於各周端徑方向位置記憶部59(參照圖21)的資訊(振幅、週期以及相位(各周端徑方向位置計測步驟(步驟S104)的計測結果)),以處理液的液膜LF的內周端701會以與配置位置周端46的位置變化相同的振幅、相同的週期以及相同的相位移動之方式控制流量調整閥501、502,並調整從處理液噴嘴419的處理液噴出口419a所噴出的處理液的流量。藉此,無須使處理液噴嘴419移動即能將處理液的液膜LF的內周端701與配置位置周端46之間的距離保持一定。結果,能不受基板W的偏心狀態影響而高度地保持基板W的上表面的外周區域42中的處理寬度的均勻性。因此,能將處理液的液膜LF的內周端701與配置位置周端46之間的具例保持一定。 The difference between the fourth substrate processing example and the third substrate processing example is that in the peripheral processing steps (steps S105 and S106), the step of reciprocating the landing position (reciprocating movement of the processing liquid nozzle 419) is not performed. Instead, the discharge flow rate of the processing liquid from the processing liquid nozzle 419 is changed, thereby causing the inner peripheral end 701 of the liquid film LF of the processing liquid to reciprocate in accordance with the positional change of the arrangement position peripheral end 46. The arrangement position peripheral end 46 moves between the position shown by the solid line in FIG. 29 (the position shown by the broken line in FIG. 30) and the position shown by the solid line in FIG. 30 with the rotation of the substrate W in the eccentricity. . In this case, the control device 3 is based on the measurement results (amplitude, period, and phase) of each position of the circumferential end radial direction position storage unit 59 (see FIG. 21) (measurement results of each circumferential end radial direction position measurement step (step S104)). )), So that the inner peripheral end 701 of the liquid film LF of the processing liquid will control the flow adjustment valves 501 and 502 with the same amplitude, the same period and the same phase shift as the position change of the position position peripheral end 46, and adjust The flow rate of the processing liquid discharged from the processing liquid discharge port 419a of the processing liquid nozzle 419. Thereby, the distance between the inner peripheral end 701 of the liquid film LF of the processing liquid and the peripheral end 46 of the arrangement position can be kept constant without moving the processing liquid nozzle 419. As a result, the uniformity of the processing width in the outer peripheral region 42 of the upper surface of the substrate W can be highly maintained without being affected by the eccentric state of the substrate W. Therefore, it is possible to keep the specific example between the inner peripheral end 701 of the liquid film LF of the processing liquid and the arrangement position peripheral end 46 constant.
此外,在第四基板處理例中,不進行著液位置往復移動步驟(處理液噴嘴419的往復移動),而是使處理液的液膜LF的內周端701追隨配置位置周端46的位置變化往復 移動。因此,無須使處理液噴嘴419移動。從而,亦能謀求用以使處理液噴嘴419移動之驅動構成簡單化。 In addition, in the fourth substrate processing example, the liquid-receiving position reciprocating step (reciprocating movement of the processing liquid nozzle 419) is not performed, but the inner peripheral end 701 of the liquid film LF of the processing liquid is caused to follow the position of the disposed position peripheral end 46. Change back and forth. Therefore, it is not necessary to move the processing liquid nozzle 419. Therefore, the driving structure for moving the processing liquid nozzle 419 can be simplified.
圖31係用以說明本發明第四實施形態的基板處理裝置801的處理單元802的構成例之示意圖。在第二實施形態中,針對與前述第一實施形態(圖1至圖18的實施形態)各部分共通之構成附上相同的元件符號,並省略說明。 FIG. 31 is a schematic diagram illustrating a configuration example of the processing unit 802 of the substrate processing apparatus 801 according to the fourth embodiment of the present invention. In the second embodiment, the same components as those in the first embodiment (the embodiment shown in Figs. 1 to 18) are assigned the same reference numerals, and descriptions thereof are omitted.
處理單元802係用以使用處理液處理(頂側處理)基板W的外周部41(參照圖32等)之單元,更具體而言,處理單元802係用以使用處理液處理(頂側處理)基板W的上表面(主面)的外周區域42(參照圖32等)以及基板W的周端面44(參照圖32等)之單元。 The processing unit 802 is a unit for processing (top-side processing) the outer peripheral portion 41 (see FIG. 32 and the like) of the substrate W using a processing liquid, and more specifically, the processing unit 802 is for processing (top-side processing) using a processing liquid. A unit of an outer peripheral region 42 (see FIG. 32 and the like) of the upper surface (main surface) of the substrate W and a peripheral end face 44 (see FIG. 32 and the like) of the substrate W.
處理單元802係包含有:處理腔室4;自轉夾具(基板保持單元)5;處理液供給單元806,係用以將處理液(藥液以及清洗液)供給至被自轉夾具5保持的基板W的上表面的外周區域42;氣體噴吹單元807,係從基板W的旋轉半徑方向(以下稱為徑方向RD)的內側朝外側對已從處理液供給單元806著液至外周區域42的處理液噴吹作為氣體的一例之惰性氣體;第一惰性氣體供給單元8;第二惰性氣體供給單元9;第三惰性氣體供給單元10;加熱器11;以及處理罩12。 The processing unit 802 includes: a processing chamber 4; a rotation jig (substrate holding unit) 5; and a processing liquid supply unit 806 for supplying a processing liquid (a chemical solution and a cleaning solution) to the substrate W held by the rotation jig 5. The upper peripheral area 42 of the upper surface; the gas blowing unit 807 processes the liquid that has been injected from the processing liquid supply unit 806 to the outer peripheral area 42 from the inside of the substrate W in the radial direction of rotation (hereinafter referred to as the radial direction RD) to the outside. The liquid injects an inert gas as an example of the gas; a first inert gas supply unit 8; a second inert gas supply unit 9; a third inert gas supply unit 10; a heater 11; and a processing cover 12.
處理液供給單元806係包含有:處理液噴嘴819;藥液配管820,係連接至處理液噴嘴819;藥液閥821,係夾設於藥液配管820;清洗液配管822,係連接至處理液噴嘴819;清洗液閥823,係夾設於清洗液配管822;以及噴嘴 移動機構824,係用以使處理液噴嘴819移動。處理液噴嘴819係例如為以連續流動的狀態噴出液體之直式噴嘴。藥液配管820被供給有來自藥液供給源的藥液。清洗液配管822被供給有來自清洗液供給源的清洗液。當在關閉清洗液閥823的狀態下開啟藥液閥821時,從設定於處理液噴嘴819的下端之處理液噴出口819a(參照圖32)噴出從藥液配管820供給至處理液噴嘴819的連續流動的藥液。此外,當在關閉藥液閥821的狀態下開啟清洗液閥823時,從處理液噴出口819a噴出從清洗液配管822供給至處理液噴嘴819的連續流動的清洗液。噴嘴移動機構824係俯視觀看時沿著通過基板W的上表面(例如上表面中央部)之軌跡使處理液噴嘴819水平地移動。噴嘴移動機構824係使處理液噴嘴819在處理位置與退避位置之間移動,該處理位置係從處理液噴嘴819噴出的處理液(藥液以及清洗液)被供給至基板W的上表面的外周區域42之位置,該退避位置係俯視觀看時處理液噴嘴819已退避至自轉夾具5的側方之位置。此外,噴嘴移動機構824係以來自處理液噴嘴819的處理液的著液位置45(參照圖32)在基板W的上表面的外周區域42中於徑方向RD移動之方式使處理液噴嘴819移動。 The processing liquid supply unit 806 includes: a processing liquid nozzle 819; a chemical liquid pipe 820 connected to the processing liquid nozzle 819; a chemical liquid valve 821 sandwiched between the chemical liquid pipe 820; and a cleaning liquid pipe 822 connected to the processing The liquid nozzle 819; the cleaning liquid valve 823 are sandwiched between the cleaning liquid pipes 822; and the nozzle moving mechanism 824 is used to move the processing liquid nozzle 819. The processing liquid nozzle 819 is, for example, a straight nozzle that discharges liquid in a continuously flowing state. The chemical solution pipe 820 is supplied with a chemical solution from a chemical solution supply source. The cleaning liquid pipe 822 is supplied with a cleaning liquid from a cleaning liquid supply source. When the chemical liquid valve 821 is opened with the cleaning liquid valve 823 closed, the liquid supplied from the chemical liquid pipe 820 to the processing liquid nozzle 819 is discharged from the processing liquid ejection port 819a (see FIG. 32) provided at the lower end of the processing liquid nozzle 819. Continuously flowing liquid medicine. When the cleaning liquid valve 823 is opened with the chemical liquid valve 821 closed, a continuous flow of cleaning liquid supplied from the cleaning liquid pipe 822 to the processing liquid nozzle 819 is ejected from the processing liquid ejection port 819a. The nozzle moving mechanism 824 moves the processing liquid nozzle 819 horizontally along a trajectory passing through the upper surface (for example, the central portion of the upper surface) of the substrate W in a plan view. The nozzle moving mechanism 824 moves the processing liquid nozzle 819 between a processing position and a retreat position, and the processing position (processing liquid (chemical liquid and cleaning liquid) ejected from the processing liquid nozzle 819) is supplied to the outer periphery of the upper surface of the substrate W The position of the region 42 is a position where the processing liquid nozzle 819 has been retracted to the side of the rotation jig 5 when viewed from above. The nozzle moving mechanism 824 moves the processing liquid nozzle 819 so that the liquid injection position 45 (see FIG. 32) of the processing liquid from the processing liquid nozzle 819 moves in the radial direction RD in the outer peripheral region 42 of the upper surface of the substrate W. .
藥液係例如為用以蝕刻基板W或者洗淨基板W之液體。藥液亦可為包含有氫氟酸、硫酸、醋酸、硝酸、鹽酸、緩衝氫氟酸(BHF)、稀釋氫氟酸(DHF)、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH等)、有 機溶劑(例如IPA等)、界面活性劑、防腐蝕劑中的至少一者之液體。清洗液係例如為去離子水(DIW),但並未限定於DIW,亦可為碳酸水、電解離子水、氫水、臭氧水以及稀釋濃度(例如10ppm至100ppm左右)的鹽酸水中的任一者。 The chemical solution is, for example, a liquid for etching the substrate W or cleaning the substrate W. The chemical solution can also include hydrofluoric acid, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, buffered hydrofluoric acid (BHF), diluted hydrofluoric acid (DHF), ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid Etc.), a liquid of at least one of an organic base (for example, TMAH, etc.), an organic solvent (for example, IPA, etc.), a surfactant, and an anticorrosive. The cleaning liquid system is, for example, deionized water (DIW), but is not limited to DIW, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm). By.
氣體噴吹單元807係包含有:氣體噴嘴901;氣體配管902,係連接至氣體噴嘴901;氣體閥903以及流量調整閥(噴吹流量調整單元)904,係夾設於氣體配管902;以及噴嘴移動機構905,係用以使氣體噴嘴901移動。雖然未圖示,但流量調整閥904係包含有:閥本體,係內部設置有閥座;閥體,係用以將閥座開閉;以及致動器,係用以使閥體在開位置與閉位置之間移動。氣體配管902係被供給有來自惰性氣體供給源的惰性氣體。當氣體閥903開啟時,從設定於氣體噴嘴901的下端之氣體噴出口901a(參照圖32)噴出已從氣體配管902供給至氣體噴嘴901的惰性氣體。從氣體噴出口901a噴出的氣體(惰性氣體)係從徑方向RD的內側朝外側噴吹至已從處理液供給單元806著液至外周區域42的處理液。噴嘴移動機構905係使氣體噴嘴901在處理位置與退避位置之間移動,該處理位置係從氣體噴嘴901噴出的氣體被供給至基板W的上表面的外周區域42之位置,該退避位置係俯視觀看時氣體噴嘴901已退避至自轉夾具5的側方之位置。作為氣體的惰性氣體係例如為氮氣,但並未限定於氮氣,亦可為空氣、氦氣或者氬氣等其他惰性氣體。 The gas injection unit 807 includes: a gas nozzle 901; a gas piping 902 connected to the gas nozzle 901; a gas valve 903 and a flow adjustment valve (injection flow adjustment unit) 904 sandwiched between the gas piping 902; and a nozzle The moving mechanism 905 is used to move the gas nozzle 901. Although not shown, the flow regulating valve 904 includes: a valve body provided with a valve seat inside; a valve body used to open and close the valve seat; and an actuator used to cause the valve body to be in an open position and Move between closed positions. The gas pipe 902 is supplied with an inert gas from an inert gas supply source. When the gas valve 903 is opened, an inert gas supplied from the gas pipe 902 to the gas nozzle 901 is ejected from a gas ejection port 901 a (see FIG. 32) provided at the lower end of the gas nozzle 901. The gas (inert gas) ejected from the gas ejection port 901 a is ejected from the inside of the radial direction RD toward the outside to the treatment liquid that has been discharged from the treatment liquid supply unit 806 to the outer peripheral region 42. The nozzle moving mechanism 905 moves the gas nozzle 901 between a processing position where the gas ejected from the gas nozzle 901 is supplied to the outer peripheral region 42 of the upper surface of the substrate W, and the retreated position is a plan view. The gas nozzle 901 has been retracted to the side position of the rotation jig 5 when viewed. The inert gas system as the gas is, for example, nitrogen, but it is not limited to nitrogen, and may be other inert gases such as air, helium, or argon.
噴嘴移動機構905係俯視觀看時沿著通過基板的上表 面(例如上表面中央部)之軌跡使氣體噴嘴901水平地移動。噴嘴移動機構905係使氣體噴嘴901在處理位置與退避位置之間移動,該處理位置係從氣體噴嘴901噴出的處理液(藥液以及清洗液)被供給至基板W的上表面的外周區域42之位置,該退避位置係俯視觀看時氣體噴嘴901已退避至自轉夾具5的側方之位置。此外,噴嘴移動機構905係以來自氣體噴嘴901的氣體的噴吹區域906在基板W的上表面的外周區域42中於徑方向RD移動之方式使氣體噴嘴901移動。 The nozzle moving mechanism 905 moves the gas nozzle 901 horizontally along a trajectory passing through the upper surface (e.g., the central portion of the upper surface) of the substrate in a plan view. The nozzle moving mechanism 905 moves the gas nozzle 901 between a processing position and a retreat position. The processing position (the chemical liquid and the cleaning liquid) ejected from the gas nozzle 901 is supplied to the outer peripheral region 42 of the upper surface of the substrate W. This retreat position is a position where the gas nozzle 901 has retreated to the side of the rotation jig 5 when viewed from above. The nozzle moving mechanism 905 moves the gas nozzle 901 so that the spray area 906 of the gas from the gas nozzle 901 moves in the radial direction RD in the outer peripheral area 42 of the upper surface of the substrate W.
此外,處理單元802係包含有:徑方向位置感測器(各周端位置計測單元)45,係用以檢測被自轉夾具5保持之基板W的周端的徑方向RD的位置(以下簡稱為「徑方向位置」)。 In addition, the processing unit 802 includes a radial position sensor (each peripheral end position measuring unit) 45 for detecting a position in the radial direction RD of the peripheral end of the substrate W held by the rotation jig 5 (hereinafter referred to as "" Radial direction position ").
圖32係用以顯示分別正從配置於處理位置的處理液噴嘴819以及氣體噴嘴901噴出處理液以及氣體的狀態之剖視圖。圖33係用以顯示在參考例中正從處理液噴嘴819噴出處理液的狀態之剖視圖。與圖32的差異點在於圖33係未將氣體噴嘴901配置於處理位置(亦即未設置氣體噴嘴901)。 32 is a cross-sectional view showing a state in which a processing liquid and a gas are being ejected from a processing liquid nozzle 819 and a gas nozzle 901 arranged at a processing position, respectively. FIG. 33 is a cross-sectional view showing a state where the processing liquid is being ejected from the processing liquid nozzle 819 in the reference example. The difference from FIG. 32 lies in that the gas nozzle 901 is not disposed at the processing position (that is, the gas nozzle 901 is not provided) in FIG. 33.
基板W係在器件形成面朝向上方的狀態下被自轉夾具5(參照圖31)保持。當在處理液噴嘴819已配置於與基板W的上表面的外周區域42對向的處理位置之狀態下選擇性地開啟藥液閥821(參照圖31)以及清洗液閥823(參照圖31)時,處理液噴嘴819係從徑方向RD的內側朝外側斜下 方地對基板W的上表面的外周區域42的著液位置(以下簡稱為「著液位置45」)噴出處理液(藥液或清洗液)。從徑方向RD的內側朝著液位置45噴出處理液。 The substrate W is held by the rotation jig 5 (see FIG. 31) with the device formation surface facing upward. The chemical liquid valve 821 (see FIG. 31) and the cleaning liquid valve 823 (see FIG. 31) are selectively opened when the processing liquid nozzle 819 is disposed at a processing position facing the outer peripheral region 42 of the upper surface of the substrate W. At this time, the processing liquid nozzle 819 discharges a processing liquid (a chemical liquid or a chemical liquid or a liquid Washing fluid). The processing liquid is ejected toward the liquid position 45 from the inside of the radial direction RD.
基板W的上表面(器件形成面)係除了外周區域42之外皆為形成有半導體器件之器件形成區域。由於處理液噴嘴819從徑方向RD的內側朝斜下方噴出處理液,因此能某程度抑制處理液朝屬於器件形成區域之基板W的上表面中央部飛濺。此時,來自處理液噴出口819a的處理液的噴出方向為沿著徑方向RD之方向,且為以預定角度射入至基板W的上表面之方向。射入角度θ 1係例如約30°至約80°,較佳為約45°。 The upper surface (device formation surface) of the substrate W is a device formation region in which a semiconductor device is formed except for the peripheral region 42. Since the processing liquid nozzle 819 discharges the processing liquid obliquely downward from the inside of the radial direction RD, it is possible to suppress the processing liquid from splashing toward the center portion of the upper surface of the substrate W belonging to the device formation region to a certain extent. At this time, the discharge direction of the processing liquid from the processing liquid discharge port 819a is a direction along the radial direction RD, and is a direction that is incident on the upper surface of the substrate W at a predetermined angle. The incidence angle θ 1 is, for example, about 30 ° to about 80 °, and preferably about 45 °.
如圖32以及圖33所示,已著液至著液位置45的處理液係在著液位置45的周圍中形成處理液的液膜LF,並相對於著液位置45朝基板W的旋轉方向R及徑方向RD的外側流動。因此,於基板W的上表面的外周區域42環狀地保持有處理液。此時的處理液的液膜LF的寬度W1(以下稱為「著液位置液體寬度W11」,為著液位置45中的處理液的寬度)係成為處理寬度。 As shown in FIG. 32 and FIG. 33, the processing liquid that has been deposited to the deposition position 45 forms a liquid film LF of the processing liquid around the deposition position 45, and faces the rotation direction of the substrate W with respect to the deposition position 45. R and radial directions RD flow outside. Therefore, the processing liquid is held in a ring shape in the outer peripheral region 42 of the upper surface of the substrate W. At this time, the width W1 of the liquid film LF of the processing liquid (hereinafter referred to as "the liquid position W11" and the width of the processing liquid at the liquid position 45) is the processing width.
如圖32所示,氣體噴嘴901係配置於與基板W的上表面的外周區域42對向之處理位置。此時,來自氣體噴嘴901的氣體噴出口901a的氣體的噴出方向為沿著徑方向RD之方向,且為以預定角度射入至基板W的上表面之方向。射入角度θ 2係例如約20°至約80°,較佳為約45°。 As shown in FIG. 32, the gas nozzle 901 is disposed at a processing position facing the outer peripheral region 42 of the upper surface of the substrate W. At this time, the gas ejection direction from the gas ejection port 901a of the gas nozzle 901 is a direction along the radial direction RD, and is a direction that is incident on the upper surface of the substrate W at a predetermined angle. The incidence angle θ 2 is, for example, about 20 ° to about 80 °, and preferably about 45 °.
在此狀態下,當開啟氣體閥903(參照圖31)時,氣體 噴嘴901係針對著液位置45從徑方向RD的內側朝外側斜下方地對位於徑方向RD的內側之噴吹區域906噴出氣體。從氣體噴嘴901的氣體噴出口901a噴出的氣體係在被噴吹至噴吹區域906後,沿著基板W的上表面朝徑方向RD的外側流動,並碰撞(噴吹)至處理液的液膜LF。如圖32所示,從竟方向RD的內側對處理液的液膜LF噴吹氣體,藉此能精度佳地控制處理液的液膜LF的內周端1101的位置。 In this state, when the gas valve 903 (see FIG. 31) is opened, the gas nozzle 901 ejects the spraying region 906 located inside the radial direction RD toward the liquid position 45 obliquely downward from the inside to the outside in the radial direction RD gas. The gas system ejected from the gas ejection port 901a of the gas nozzle 901 is blown to the spray area 906, and then flows along the upper surface of the substrate W toward the outside in the radial direction RD, and collides (blows) the liquid to the processing liquid. Membrane LF. As shown in FIG. 32, the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid can be accurately controlled by blowing gas onto the liquid film LF of the processing liquid from the inside of the direction RD.
在如圖33所示般不進行氣體的噴吹之情形中,由於無法精度佳地控制處理液的液膜LF的內周端1101的位置且無法將著液位置液體寬度W11設定成較細,因此難以將處理寬度設定在約1mm以下。相對於此,如圖32所示,在本實施形態中,由於能精度佳地控制處理液的液膜LF的內周端1101的位置,因此亦可將著液位置液體寬度W11調整成細寬度。具體而言,進行此種氣體的噴吹,藉此能將處理寬度調整成微距毫米(comma milli)。 In the case where gas injection is not performed as shown in FIG. 33, the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid cannot be controlled with high accuracy and the liquid width W11 of the landing position cannot be set to be thin. Therefore, it is difficult to set the processing width to about 1 mm or less. On the other hand, as shown in FIG. 32, in this embodiment, since the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid can be controlled with high accuracy, the liquid width W11 of the liquid landing position can also be adjusted to a fine width. . Specifically, by spraying such a gas, the processing width can be adjusted to a comma milli.
此外,由於從逕方向RD的內側對處理液的液膜LF(已著液至著液位置45的處理液)噴吹氣體,因此能抑制已著液至著液位置45的處理液朝徑方向RD的內側飛散。藉此,能更有效地抑制處理液進入至器件形成區域。 In addition, since the gas is sprayed from the inside of the radial direction RD on the liquid film LF of the processing liquid (the processing liquid that has been deposited to the deposition position 45), the processing liquid that has been deposited to the deposition position 45 can be suppressed from moving in the radial direction. The inside of RD scatters. This makes it possible to more effectively suppress the treatment liquid from entering the device formation region.
此外,著液位置液體寬度W1(液膜LF的寬度)的寬窄(亦即處理液的液膜LF的內周端1101的位置)係依存於處理旋轉速度(處理時的基板W的旋轉速度)。當處理旋轉速度快時,由於基板W的旋轉所致使之離心力增大,因此著液位置液體寬度W11變窄。另一方面,當處理旋轉速度慢 時,由於基板W的旋轉所致使之離心力減少,因此著液位置液體寬度W11變寬。 In addition, the width of the liquid injection position liquid width W1 (the width of the liquid film LF) (that is, the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid) depends on the processing rotation speed (the rotation speed of the substrate W during processing). . When the processing rotation speed is fast, the centrifugal force is increased due to the rotation of the substrate W, so the liquid width W11 at the landing position becomes narrow. On the other hand, when the processing rotation speed is slow, the centrifugal force is reduced due to the rotation of the substrate W, so the liquid width W11 at the landing position becomes wider.
圖34係顯示配置於處理位置的狀態中之氣體噴嘴901的俯視圖。在圖34中,省略處理液噴嘴819的圖示。俯視觀看時,於氣體噴嘴901的下表面形成有圓弧隙縫狀的氣體噴出口901a。氣體噴出口901a係於基板W的周方向具有預定的寬度W2。在氣體噴嘴901配置於處理位置的狀態下,從氣體噴出口901a噴出的氣體係噴吹至基板W的上表面,並形成沿著基板W的外周區域42之帶狀(在本實施形態中為圓弧狀)。在基板W的旋轉速度慢之情形中,由於作用於基板W的上表面的外周區域42之離心力小,因此有在已著液至著液位置45(參照圖32)的處理液朝旋轉方向R流動之過程中朝內側擴展之虞。然而,在本實施形態中,由於噴吹區域906作成沿著基板W的外周區域42之帶狀(圓弧狀),因此能更有效地抑制處理液朝基板W的內側擴展。 FIG. 34 is a plan view showing the gas nozzle 901 in a state of being disposed at a processing position. In FIG. 34, illustration of the processing liquid nozzle 819 is omitted. When viewed from above, a circular gas slot-shaped gas ejection port 901 a is formed on the lower surface of the gas nozzle 901. The gas ejection port 901a has a predetermined width W2 in the circumferential direction of the substrate W. In a state where the gas nozzle 901 is disposed at the processing position, the gas system ejected from the gas ejection port 901a is sprayed onto the upper surface of the substrate W, and forms a band shape along the outer peripheral region 42 of the substrate W (in this embodiment, it is Arc). In the case where the rotation speed of the substrate W is slow, the centrifugal force acting on the outer peripheral region 42 of the upper surface of the substrate W is small, and therefore, there is a processing liquid that has been impacted to the deposition position 45 (see FIG. 32) in the direction of rotation R. There is a fear of expanding inward during the flow. However, in this embodiment, since the spray region 906 is formed in a band shape (arc shape) along the outer peripheral region 42 of the substrate W, it is possible to more effectively suppress the processing liquid from expanding toward the inside of the substrate W.
在第四實施形態的處理單元802中,亦是藉由自轉夾具5支撐基板W的中央部而非是支撐基板W的外周部41。因此,有在自轉夾具5所為之基板W的保持狀態下產生偏心之虞(參照圖4以及圖5),在此情形中,會產生配置位置周端46相對於旋轉軸線A1之徑方向位置伴隨著基板W的旋轉角度位置變化之問題。結果,如圖6所示,會有基板W的上表面的外周區域42的處理寬度在周方向各位置產生偏差之虞。 In the processing unit 802 of the fourth embodiment, the central portion of the substrate W is supported by the rotation jig 5 instead of the outer peripheral portion 41 of the substrate W. Therefore, there is a possibility that eccentricity may occur in the holding state of the substrate W which the rotation jig 5 holds (see FIGS. 4 and 5). In this case, the radial position of the peripheral position 46 of the arrangement position with respect to the rotation axis A1 may be accompanied. The problem is that the rotation angle position of the substrate W changes. As a result, as shown in FIG. 6, the processing width of the outer peripheral region 42 on the upper surface of the substrate W may be deviated from each position in the circumferential direction.
圖35係用以說明基板處理裝置801的主要部分的電性構成之方塊圖。 FIG. 35 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 801.
控制裝置3的記憶單元52係由可電性地覆寫資料之非揮發性記憶體所構成。記憶單元52係包含有:配方記憶部54,係記憶有配方,該配方係規定針對基板W之各個處理的內容;各周端徑方向位置記憶部59,係記憶與被自轉夾具5保持的基板W的周方向的各周端位置中之相對於旋轉軸線A1為徑方向RD的位置(以下稱為「各周端徑方向位置」)有關的位置資訊;以及資訊記憶部855,係記憶旋轉速度-噴吹區域位置對應表907(第三對應關係規定資訊,參照圖36),該旋轉速度-噴吹區域位置對應表907係規定基板W的旋轉速度與氣體的噴吹區域906(圖32等)的位置之間的對應關係。 The memory unit 52 of the control device 3 is composed of a non-volatile memory that can electrically overwrite data. The memory unit 52 includes: a recipe memory unit 54 that stores a recipe that defines the content of each process for the substrate W; each peripheral end position memory unit 59 that stores the substrate held by the rotation fixture 5 Among the circumferential end positions of W in the circumferential direction, the position information about the position in the radial direction RD with respect to the rotation axis A1 (hereinafter referred to as "the circumferential end radial position"); and the information storage unit 855, which stores the rotation speed -Blowing area position correspondence table 907 (third correspondence relationship specification information, refer to FIG. 36), the rotation speed-blowing area position correspondence table 907 specifies the rotation speed of the substrate W and the gas blowing area 906 (FIG. 32, etc.) ).
於控制裝置3連接有作為控制對象之自轉馬達18、噴嘴移動機構824、905、30、34、加熱器11的加熱源、藥液閥821、清洗液閥823、氣體閥903、第一氣體閥29、第二氣體閥33、第三氣體閥38以及流量調整閥904等。控制裝置3係控制自轉馬達18、噴嘴移動機構824、905、30、34以及加熱器11的動作。此外,控制裝置3係將閥(821、823、903、29、33、38)等予以開閉。此外,控制裝置3係調整流量調整閥904的開度。 The control device 3 is connected with a rotation motor 18 as a control object, nozzle moving mechanisms 824, 905, 30, and 34, a heating source of the heater 11, a chemical liquid valve 821, a cleaning liquid valve 823, a gas valve 903, and a first gas valve. 29. The second gas valve 33, the third gas valve 38, the flow adjustment valve 904, and the like. The control device 3 controls operations of the rotation motor 18, the nozzle moving mechanisms 824, 905, 30, and 34, and the heater 11. In addition, the control device 3 opens and closes valves (821, 823, 903, 29, 33, 38) and the like. The control device 3 adjusts the opening degree of the flow rate adjustment valve 904.
此外,於控制裝置3被輸入有徑方向位置感測器47的檢測輸出。 A detection output of the radial position sensor 47 is input to the control device 3.
圖36係用以說明記憶於資訊記憶部855之旋轉速度- 噴吹區域位置對應表907之圖。 FIG. 36 is a diagram for explaining the rotation speed-blowing area position correspondence table 907 stored in the information storage unit 855.
於旋轉速度-噴吹區域位置對應表907規定有基板W的旋轉速度(處理旋轉速度)與噴吹區域906(參照圖32)的徑方向RD之間的對應關係,該噴吹區域906的徑方向RD的位置係與各旋轉速度對應。藉由旋轉速度-噴吹區域位置對應表907所規定之「噴吹區域906的位置」係可為氣體噴嘴901的處理位置的徑方向RD的位置資訊,亦可為馬達的驅動值且為與該氣體噴嘴901的處理位置對應之驅動值,該馬達的驅動值係構成用以驅動氣體噴嘴901之噴嘴移動機構905。 A correspondence relationship between the rotation speed (processing rotation speed) of the substrate W and the radial direction RD of the spray area 906 (see FIG. 32) is specified in the rotation speed-blow area position correspondence table 907. The position in the direction RD corresponds to each rotation speed. The “position of the spray area 906” specified by the rotation speed-blast area position correspondence table 907 is position information of the radial direction RD of the processing position of the gas nozzle 901, and it can also be the drive value of the motor and The driving value corresponding to the processing position of the gas nozzle 901. The driving value of the motor constitutes a nozzle moving mechanism 905 for driving the gas nozzle 901.
一般而言,有著液位置液體寬度W11會隨著基板W的旋轉速度變慢而變寬之傾向。此外,隨著相對於各旋轉速度之氣體噴嘴901的處理位置(成為基準之處理位置)的徑方向RD的位置愈朝徑方向RD的外側而使用以將處理液的液膜LF的內周端1101朝徑方向RD的外側按壓之力量增大。旋轉速度-噴吹區域位置對應表907係以下述方式被規定:為了阻止著液位置液體寬度W11變寬而以隨著基板W的旋轉速度變慢將用以將處理液的液膜LF的內周端1101朝徑方向RD的外側按壓之力量增大之方式被規定,亦即以隨著基板W的旋轉速度變慢使噴吹區域906於徑方向RD的外側移動之方式被規定。 In general, the liquid position W11 tends to become wider as the rotation speed of the substrate W becomes slower. In addition, as the position of the radial direction RD relative to the processing position (the reference processing position) of the gas nozzle 901 at each rotation speed becomes more outward in the radial direction RD, the inner peripheral end of the liquid film LF of the processing liquid is used. 1101 The force of pressing outward in the radial direction RD increases. The rotation speed-blowing region position correspondence table 907 is specified in the following manner: In order to prevent the liquid-contacting position liquid width W11 from becoming wider, the rotation speed of the substrate W will be slower as the rotation speed of the substrate W will decrease. A method for increasing the pressing force of the peripheral end 1101 toward the outside in the radial direction RD is defined, that is, a method for moving the spray region 906 outside the radial direction RD as the rotation speed of the substrate W becomes slower.
圖37係用以說明處理單元802所執行的第五基板處理例之流程圖。圖38係用以說明外周部處理步驟(步驟S205、步驟S206)的內容之流程圖。圖39以及圖40係用以說明外 周部處理步驟(步驟S205、步驟S206)的內容之示意圖。圖41以及圖42係用以說明外周部處理步驟(步驟S205、步驟S206)中的處理液噴嘴819以及氣體噴嘴901的狀態之圖。 FIG. 37 is a flowchart illustrating a fifth substrate processing example executed by the processing unit 802. FIG. 38 is a flowchart for explaining the contents of the processing steps (steps S205 and S206) in the outer periphery. Fig. 39 and Fig. 40 are schematic diagrams for explaining the contents of the peripheral processing steps (step S205, step S206). 41 and 42 are diagrams for describing states of the processing liquid nozzle 819 and the gas nozzle 901 in the processing steps (steps S205 and S206) in the outer peripheral portion.
參照圖1、圖31、圖32、圖33以及圖35至圖37說明該第五基板處理例。 This fifth substrate processing example will be described with reference to FIGS. 1, 31, 32, 33, and 35 to 37.
首先,將未處理的基板W搬入至處理腔室4的內部(圖37的步驟S201)。具體而言,使正在保持基板W之搬運機器人CR的手部H進入至處理腔室4的內部,藉此在器件形成面朝向上方的狀態下將基板W授受至自轉夾具5。 First, the unprocessed substrate W is carried into the processing chamber 4 (step S201 in FIG. 37). Specifically, the hand H of the transfer robot CR holding the substrate W is entered into the processing chamber 4, and the substrate W is transferred to the rotation jig 5 with the device formation surface facing upward.
之後,當吸附支撐基板W的下表面中央部時,藉由自轉夾具5保持基板W(基板保持步驟,圖37的步驟S202)。在本實施形態中,未進行使用了定中心機構之基板W相對於自轉夾具5之中心對準。 After that, when the lower surface center portion of the supporting substrate W is sucked, the substrate W is held by the rotation jig 5 (substrate holding step, step S202 in FIG. 37). In this embodiment, the alignment of the substrate W using the centering mechanism with respect to the center of the rotation jig 5 is not performed.
基板W被自轉夾具5保持後,控制裝置3係控制自轉馬達18使基板W開始旋轉(圖37的步驟S203)。 After the substrate W is held by the rotation jig 5, the control device 3 controls the rotation motor 18 to start the rotation of the substrate W (step S203 in FIG. 37).
接著,控制裝置3係執行各周端徑方向位置計測步驟(圖37的步驟S204),該各周端徑方向位置計測步驟係計測被自轉夾具5保持的基板W的各周端徑方向位置。由於各周端徑方向位置計測步驟(圖37的步驟S204)係與圖12所示的各周端徑方向位置計測步驟(步驟S4)同等,因此省略詳細的說明。 Next, the control device 3 executes each circumferential end radial position measurement step (step S204 in FIG. 37), and each circumferential end radial position measurement step measures each circumferential end radial direction position of the substrate W held by the rotation jig 5. Since the steps of measuring the positions in the circumferential end diameter direction (step S204 in FIG. 37) are the same as the steps of measuring the positions in the circumferential end diameter direction (step S4) shown in FIG. 12, detailed description is omitted.
在各周端徑方向位置計測步驟(步驟S204)結束後,接著,控制裝置3係執行外周部藥液處理步驟(外周部處理步驟,圖37的步驟S205),該外周部藥液處理步驟係使用藥 液處理基板W的外周部41。外周部藥液處理步驟(步驟S205)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1300rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部藥液處理步驟(步驟S205)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的藥液的著液位置45追隨伴隨著基板W的旋轉角度位置之配置位置周端46的徑方向位置變化於徑方向RD往復移動。此外,控制裝置3係與外周部藥液處理步驟(步驟S205)並行地執行噴吹區域往復移動步驟,該噴吹區域往復移動步驟係使噴吹區域906隨同藥液的著液位置45的徑方向RD的移動而往復移動。此外,在本說明書中,所謂「使著液位置45往復移動」以及「使噴吹區域906往復移動」係指將處於靜止狀態的物體作為基準之往復移動而非是將基板W作為基準之往復移動。 After the peripheral position measurement step (step S204) is completed, the control device 3 executes a peripheral chemical solution processing step (peripheral processing step, step S205 in FIG. 37). This peripheral chemical solution processing step is The outer peripheral portion 41 of the substrate W is processed using a chemical solution. The peripheral chemical solution processing step (step S205) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1300 rpm). In addition, the control device 3 executes a liquid-reciprocating position reciprocating movement step in parallel with the peripheral chemical liquid processing step (step S205). The liquid-receiving position reciprocating movement moves the chemical liquid in the outer peripheral region 42 of the upper surface of the substrate W. The liquid-impacting position 45 changes in the radial direction position of the peripheral position 46 following the arrangement position accompanying the rotation angle position of the substrate W and reciprocates in the radial direction RD. In addition, the control device 3 executes the spraying area reciprocating movement step in parallel with the peripheral chemical liquid processing step (step S205). The spraying area reciprocating movement step causes the spraying area 906 to follow the diameter of the injection position 45 of the chemical liquid. The movement in the direction RD reciprocates. In addition, in this specification, "reciprocating the liquid-impacting position 45" and "reciprocating the blowing area 906" refer to reciprocating motion using a stationary object as a reference rather than reciprocating the substrate W as a reference. mobile.
一併參照圖38,說明外周部藥液處理步驟(步驟S205)。 Referring to FIG. 38 together, a procedure for processing the peripheral chemical solution (step S205) will be described.
在外周部藥液處理步驟(步驟S205)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(亦即外周部藥液處理步驟(步驟S205)中的基板W的旋轉速度)(圖38的步驟S230)。此外,在處理液噴嘴819位於退避位置之情形中,控制裝置3係控制噴嘴移動機構824將處理液噴嘴819配置於上表面的處理位置(圖32所示的位置)(圖38的步驟S231)。 In the peripheral chemical solution processing step (step S205), the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotational speed (that is, the substrate in the peripheral chemical solution processing step (step S205)). W rotation speed) (step S230 in FIG. 38). In addition, in a case where the processing liquid nozzle 819 is located at the retreated position, the control device 3 controls the nozzle moving mechanism 824 to arrange the processing liquid nozzle 819 at a processing position (position shown in FIG. 32) on the upper surface (step S231 in FIG. 38) .
此外,控制裝置3的運算單元51係參照記憶於資訊記 憶部855的旋轉速度-噴吹區域位置對應表907(參照圖36),決定與該處理旋轉速度對應之氣體噴嘴901的處理位置(徑方向RD的位置)(圖38的步驟S232)。接著,控制裝置3係將氣體噴嘴901配置於經過決定的處理位置(徑方向RD的位置)(圖38的步驟S233)。 In addition, the arithmetic unit 51 of the control device 3 refers to the rotation speed-blow area position correspondence table 907 (see FIG. 36) stored in the information storage unit 855, and determines the processing position (diameter of the gas nozzle 901 corresponding to the processing rotation speed). Position in the direction RD) (step S232 in FIG. 38). Next, the control device 3 arranges the gas nozzle 901 at the determined processing position (the position in the radial direction RD) (step S233 in FIG. 38).
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉清洗液閥823一邊開啟藥液閥821,藉此從處理液噴嘴819的處理液噴出口819a開始噴出藥液(圖38的步驟S234)。此外,控制裝置3係開啟氣體閥903,藉此從氣體噴嘴901的氣體噴出口901a開始噴出氣體(圖38的步驟S234)。在開始噴出氣體之前的狀態中,流量調整閥904係被調整至預先設定的開度。藉此,如圖32所示,藥液著液至基板W的上表面的外周區域42並形成有藥液的液膜LF,且從徑方向RD的內側對藥液的液膜LF噴吹氣體。藉此,能良好地控制著液位置液體寬度W1。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the chemical liquid valve 821 while closing the cleaning liquid valve 823, thereby starting to eject the chemical liquid from the processing liquid ejection port 819a of the processing liquid nozzle 819 (FIG. 38 Step S234). In addition, the control device 3 opens the gas valve 903, thereby starting to eject gas from the gas ejection port 901a of the gas nozzle 901 (step S234 in FIG. 38). In a state before the gas is ejected, the flow rate adjustment valve 904 is adjusted to a predetermined opening degree. Thereby, as shown in FIG. 32, the chemical liquid is deposited on the outer peripheral region 42 of the upper surface of the substrate W to form the liquid film LF of the chemical liquid, and the liquid film LF of the chemical liquid is blown from the inside of the radial direction RD. . Thereby, the liquid position W1 of the liquid position can be well controlled.
此外,從氣體噴嘴901開始噴出氣體亦可在從處理液噴嘴819開始噴出藥液之前先開始。 In addition, the gas ejection from the gas nozzle 901 may be started before the chemical liquid is ejected from the processing liquid nozzle 819.
如圖39以及圖40所示,控制裝置3係執行前述著液位置往復移動步驟(圖38的步驟S235)。具體而言,控制裝置3係依據各周端徑方向位置記憶部59所記憶的資訊(振幅、週期以及相位(各周端徑方向位置計測步驟(步驟S204)的計測結果)),以著液位置45會以與配置位置周端46的位置變化相同的振幅、相同的週期以及相同的相位移動之方式使處理液噴嘴819往復移動。 As shown in FIG. 39 and FIG. 40, the control device 3 executes the aforementioned step of reciprocating the landing position (step S235 in FIG. 38). Specifically, the control device 3 is based on the information (amplitude, period, and phase (measurement result of each peripheral end radial direction position measurement step (step S204))) stored in each peripheral end radial direction position storage unit 59, and performs the liquid injection. The position 45 causes the processing liquid nozzle 819 to reciprocate with the same amplitude, the same period, and the same phase shift as the position change of the position peripheral end 46.
再者,控制裝置3係與著液位置往復移動步驟並行地執行噴吹區域往復移動步驟(步驟S235)。如圖41以及圖42所示,配置位置周端46係伴隨著偏心中的基板W的旋轉而在圖41中以實線所示的位置(圖42中以虛線所示的位置)與圖42中以實線所示的位置之間移動。控制裝置3係一邊將著液位置45與噴吹區域906之間的徑方向RD的距離保持一定,一邊使氣體噴嘴901與處理液噴嘴819的移動同步並使氣體噴嘴901往復移動。藉此,能不受著液位置45的往復移動影響地將著液位置液體寬度W11保持成與基板W的旋轉速度對應之一定的寬度。結果,如圖18所示,能高度地保持基板W的上表面的外周區域42中的處理寬度的均勻性。 In addition, the control device 3 executes the reciprocating movement of the spray area in parallel with the reciprocating movement of the injection position (step S235). As shown in FIG. 41 and FIG. 42, the arrangement position peripheral end 46 is a position shown by a solid line in FIG. 41 (a position shown by a dotted line in FIG. 42) and FIG. 42 in accordance with the rotation of the substrate W during eccentricity. Move between the positions shown by the solid line. The control device 3 synchronizes the movement of the gas nozzle 901 and the processing liquid nozzle 819 and reciprocates the gas nozzle 901 while keeping the distance in the radial direction RD between the liquid injection position 45 and the spray region 906 constant. Thereby, the liquid width W11 of the liquid-impacting position can be maintained at a constant width corresponding to the rotation speed of the substrate W without being affected by the reciprocating movement of the liquid-impacting position 45. As a result, as shown in FIG. 18, the uniformity of the processing width in the outer peripheral region 42 of the upper surface of the substrate W can be highly maintained.
當從開始噴出藥液經過預先設定的期間時(在圖38的步驟S236中為是),控制裝置3係分別關閉藥液閥821以及氣體閥903。藉此,停止(結束)從處理液噴嘴819噴出藥液且停止(結束)從氣體噴嘴901噴出氣體(圖38的步驟S237)。 When a predetermined period has elapsed from the start of ejection of the chemical liquid (YES in step S236 in FIG. 38), the control device 3 closes the chemical liquid valve 821 and the gas valve 903, respectively. Thereby, the discharge of the chemical liquid from the processing liquid nozzle 819 is stopped (finished) and the discharge of the gas from the gas nozzle 901 is stopped (finished) (step S237 in FIG. 38).
此外,在外周部藥液處理步驟(步驟S205)中,加熱器11的熱源被開啟,藉由加熱器11加熱基板W的下表面的外周區域43。藉此,提高外周部藥液處理的處理速度。此外,在外周部藥液處理步驟(步驟S205)中,藉由從位於處理位置的氣體噴出噴嘴27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。藉由該放射狀氣流保護屬於器件形成區域之基板W的上表面 中央部。此外,在外周部藥液處理步驟(步驟S205)中,在基板的上表面的外周區域42中從位於設定在與氣體噴嘴901的處理位置不同的周方向位置之處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。能藉由該惰性氣體的噴吹在基板W的周方向的複數個位置控制基板W的上表面的外周區域42中的藥液的處理寬度。此外,在外周部藥液處理步驟(步驟S205)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。能藉由該惰性氣體的噴吹防止藥液繞入至基板W的下表面。 In addition, in the peripheral chemical processing step (step S205), the heat source of the heater 11 is turned on, and the outer peripheral region 43 of the lower surface of the substrate W is heated by the heater 11. Thereby, the processing speed of the chemical processing of the peripheral part is improved. In addition, in the peripheral chemical processing step (step S205), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection nozzle 27 located at the processing position. . The central portion of the upper surface of the substrate W belonging to the device formation region is protected by this radial airflow. Further, in the peripheral chemical solution processing step (step S205), the upper peripheral gas nozzle is located in the peripheral region 42 on the upper surface of the substrate from a processing position set at a processing position set in a circumferential direction position different from the processing position of the gas nozzle 901. An inert gas is blown at the blowing position of the outer peripheral region 42 of the upper surface of the substrate W at 31. The processing width of the chemical solution in the outer peripheral region 42 on the upper surface of the substrate W can be controlled by the blowing of the inert gas at a plurality of positions in the circumferential direction of the substrate W. In addition, in the peripheral chemical solution processing step (step S205), an inert gas is ejected from the lower outer peripheral gas nozzle 36 located at the processing position to the injection position of the outer peripheral region 43 on the lower surface of the substrate W. The injecting of the inert gas can prevent the chemical solution from getting into the lower surface of the substrate W.
在外周部藥液處理步驟(步驟S205)結束後,接著,控制裝置3係執行外周部清洗液處理步驟(外周部處理步驟,圖37的步驟S206),該外周部清洗液處理步驟係使用清洗液處理基板W的外周部41。外周部清洗液處理步驟(步驟S206)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1300rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部清洗液處理步驟(步驟S206)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的清洗液的著液位置45追隨伴隨著基板W的旋轉角度位置之配置位置周端46的徑方向位置變化於徑方向往復RD往復移動。一併參照圖39,說明外周部清洗液處理步驟(步驟S206)。 After the peripheral chemical solution processing step (step S205) is completed, the control device 3 executes the peripheral cleaning solution processing step (peripheral processing step, step S206 in FIG. 37), and the peripheral cleaning solution processing step uses cleaning The outer peripheral portion 41 of the liquid processing substrate W. The outer peripheral cleaning liquid processing step (step S206) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1300 rpm). In addition, the control device 3 executes a liquid-reciprocating position reciprocating movement step in parallel with the peripheral cleaning liquid processing step (step S206). The liquid-impeding position 45 follows the arrangement position of the peripheral position 46 accompanying the rotation angle position of the substrate W. The radial position changes back and forth in the radial direction RD. Referring to FIG. 39 together, the outer peripheral cleaning liquid processing step (step S206) will be described.
在外周部清洗液處理步驟(步驟S206)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處 理旋轉速度(亦即外周部清洗液處理步驟(步驟S206)中的基板W的旋轉速度)(步驟S230)。此外,在處理液噴嘴819處於退避位置之情形中,控制裝置3係控制噴嘴移動機構824將處理液噴嘴819配置於上表面的處理位置(圖32所示的位置)(步驟S231)。 In the peripheral cleaning solution processing step (step S206), the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotation speed (that is, the substrate in the peripheral cleaning solution processing step (step S206)). W rotation speed) (step S230). When the processing liquid nozzle 819 is in the retracted position, the control device 3 controls the nozzle moving mechanism 824 to arrange the processing liquid nozzle 819 at a processing position (the position shown in FIG. 32) on the upper surface (step S231).
此外,控制裝置3的運算單元51係參照記憶於資訊記憶部855的旋轉速度-噴吹區域位置對應表907(參照圖36),決定與該處理旋轉速度對應之氣體噴嘴901的處理位置(徑方向RD的位置)(步驟S232)。接著,控制裝置3係將氣體噴嘴901配置於經過決定的處理位置(徑方向RD的位置)(步驟S233)。 In addition, the arithmetic unit 51 of the control device 3 refers to the rotation speed-blow area position correspondence table 907 (see FIG. 36) stored in the information storage unit 855, and determines the processing position (diameter of the gas nozzle 901 corresponding to the processing rotation speed). Position in the direction RD) (step S232). Next, the control device 3 arranges the gas nozzle 901 at the determined processing position (the position in the radial direction RD) (step S233).
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉藥液閥821一邊開啟清洗液閥823,藉此從處理液噴嘴819的處理液噴出口819a開始噴出清洗液(步驟S234)。此外,控制裝置3係開啟氣體閥903,藉此從氣體噴嘴901的氣體噴出口901a開始噴出氣體(步驟S234)。藉此,如圖32所示,清洗液著液至基板W的上表面的外周區域42並形成有清洗液的液膜LF,且從徑方向RD的內側對藥液的液膜LF噴吹氣體。藉此,能良好地控制著液位置液體寬度W1。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the cleaning liquid valve 823 while closing the chemical liquid valve 821, thereby starting to eject the cleaning liquid from the processing liquid ejection port 819a of the processing liquid nozzle 819 (step S234). . In addition, the control device 3 opens the gas valve 903, thereby starting to eject gas from the gas ejection port 901a of the gas nozzle 901 (step S234). Thereby, as shown in FIG. 32, the cleaning liquid is deposited on the outer peripheral region 42 of the upper surface of the substrate W to form a liquid film LF of the cleaning liquid, and the liquid film LF of the chemical liquid is blown from the inside of the radial direction RD. . Thereby, the liquid position W1 of the liquid position can be well controlled.
如圖39以及圖40所示,控制裝置3係執行前述著液位置往復移動步驟(步驟S233)。此外,如圖41以及圖42所示,控制裝置3係與著液位置往復移動步驟並行地執行噴吹區域往復移動步驟(步驟S233)。由於著液位置往復移 動步驟以及噴吹區域往復移動步驟已在外周部藥液處理步驟(步驟S205)中說明完畢,因此省略該說明。 As shown in FIG. 39 and FIG. 40, the control device 3 executes the aforementioned step of reciprocating the landing position (step S233). In addition, as shown in FIGS. 41 and 42, the control device 3 executes the reciprocating movement of the spray area in parallel with the reciprocating movement of the injection position (step S233). Since the step of reciprocating the landing position and the step of reciprocating the spraying region have been described in the step of treating the chemical solution in the outer portion (step S205), the description is omitted.
當從開始噴出清洗液經過預先設定的期間時(在步驟S236中為是),控制裝置3係關閉清洗液閥823並關閉氣體閥903。藉此,停止(結束)從處理液噴嘴819噴出清洗液且停止(結束)從氣體噴嘴901噴出氣體(步驟S237)。 When a predetermined period has elapsed from the start of discharging the cleaning liquid (YES in step S236), the control device 3 closes the cleaning liquid valve 823 and closes the gas valve 903. Thereby, the discharge of the cleaning liquid from the processing liquid nozzle 819 is stopped (finished), and the discharge of the gas from the gas nozzle 901 is stopped (finished) (step S237).
此外,在外周部清洗液處理步驟(步驟S206)中,藉由從位於處理位置的氣體噴出噴嘴27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。此外,在外周部清洗液處理步驟(步驟S206)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。此外,在外周部清洗液處理步驟(步驟S206)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。在外周部清洗液處理步驟(步驟S206)中,可將加熱器11的熱源開啟且藉由加熱器11加熱基板W的下表面的外周區域43,亦可不加熱基板W的下表面的外周區域43。 In the outer peripheral cleaning liquid processing step (step S206), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection nozzle 27 located at the processing position. . In addition, in the outer peripheral cleaning liquid processing step (step S206), an inert gas is sprayed from the upper outer peripheral gas nozzle 31 located at the processing position to the injection position of the outer peripheral region 42 on the upper surface of the substrate W. In addition, in the outer peripheral cleaning liquid processing step (step S206), an inert gas is ejected from the lower outer peripheral gas nozzle 36 located at the processing position to the blowing position of the outer peripheral region 43 on the lower surface of the substrate W. In the outer peripheral cleaning liquid processing step (step S206), the heat source of the heater 11 may be turned on and the outer peripheral region 43 of the lower surface of the substrate W may be heated by the heater 11 or the outer peripheral region 43 of the lower surface of the substrate W may not be heated. .
之後,控制裝置3係控制噴嘴移動機構824將處理液噴嘴819返回至自轉夾具5的側方的退避位置。 After that, the control device 3 controls the nozzle moving mechanism 824 to return the processing liquid nozzle 819 to the side retracted position of the rotation jig 5.
接著,進行使基板W乾燥之旋乾(圖37的步驟S207)。具體而言,控制裝置3係控制自轉馬達18使基板W加速至比各個處理步驟S202至步驟S206中的旋轉速度還高之乾燥旋轉速度(例如數千rpm),並使基板W以該乾燥旋轉 速度旋轉。藉此,大的離心力施加至基板W上的液體,附著於基板W的外周部的液體係被甩離至基板W的周圍。如此,從基板W的外周部去除液體而使基板W的外周部乾燥。 Next, spin-drying is performed to dry the substrate W (step S207 in FIG. 37). Specifically, the control device 3 controls the rotation motor 18 to accelerate the substrate W to a drying rotation speed (for example, several thousand rpm) higher than the rotation speed in each of the processing steps S202 to S206, and causes the substrate W to rotate at the drying speed. Speed rotation. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid system adhered to the outer peripheral portion of the substrate W is thrown away from the periphery of the substrate W. In this manner, the liquid is removed from the outer peripheral portion of the substrate W, and the outer peripheral portion of the substrate W is dried.
當從基板W開始高速旋轉經過預定期間時,控制裝置3係藉由控制自轉馬達18而停止自轉夾具5所為之基板W的旋轉。 When the high-speed rotation from the substrate W has passed for a predetermined period, the control device 3 stops the rotation of the substrate W for the rotation jig 5 by controlling the rotation motor 18.
之後,從處理腔室4內搬出基板W(圖37的步驟S208)。具體而言,控制裝置3係使搬運機器人CR的手部進入至處理腔室4的內部。接著,控制裝置3係使搬運機器人CR的手部保持自轉夾具5上的基板W。之後,控制裝置3係使搬運機器人CR的手部從處理腔室4內退避。藉此,從處理腔室4搬出處理後的基板W。 After that, the substrate W is carried out from the processing chamber 4 (step S208 in FIG. 37). Specifically, the control device 3 allows the hand of the transfer robot CR to enter the processing chamber 4. Next, the control device 3 holds the substrate W on the rotation jig 5 by the hand of the transfer robot CR. After that, the control device 3 retracts the hand of the transfer robot CR from the processing chamber 4. Thereby, the processed substrate W is carried out from the processing chamber 4.
藉此,依據第四實施形態,從基板W的徑方向RD的內側朝已著液至基板W的上表面的外周區域42的著液位置45之處理液噴吹氣體。處理液的液膜LF的內周端1101的位置係依存於基板W的旋轉速度。因應基板W的處理旋轉速度調整基板W中之氣體的噴吹區域906的位置(內周端位置調整步驟的執行),藉此能將處理液的液膜LF的內周端1101的位置調整至與外周部處理步驟(步驟S205、步驟S206)中的處理旋轉速度對應之位置。並且,藉由調整處理液的液膜LF的內周端1101的位置,亦能將著液位置液體寬度W11調整至適合處理旋轉速度之寬度。因此,不論基板W的旋轉速度為何皆能精密地控制著液位置液體 寬度W11。藉此,能不受基板W的旋轉速度影響而能精密地控制基板W的上表面的外周區域42中的處理寬度。 Thereby, according to the fourth embodiment, a gas is blown from the inside of the radial direction RD of the substrate W toward the processing liquid at the liquid injection position 45 of the outer peripheral region 42 of the upper surface of the substrate W. The position of the inner peripheral end 1101 of the liquid film LF of the processing liquid depends on the rotation speed of the substrate W. The position of the gas injection region 906 in the substrate W is adjusted in accordance with the processing rotation speed of the substrate W (the execution of the inner peripheral end position adjustment step), so that the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid can be adjusted to The position corresponding to the processing rotation speed in the outer peripheral processing step (step S205, step S206). In addition, by adjusting the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid, the liquid width W11 of the liquid landing position can be adjusted to a width suitable for the processing rotation speed. Therefore, regardless of the rotation speed of the substrate W, the liquid position W11 at the liquid position can be precisely controlled. This makes it possible to precisely control the processing width in the outer peripheral region 42 of the upper surface of the substrate W without being affected by the rotation speed of the substrate W.
此外,變更噴吹區域906的徑方向RD的位置,藉此將處理液的液膜LF的內周端1101的位置調整至與處理旋轉速度對應之位置。噴吹區域906的徑方向RD的位置係直接性地作用至處理液的液膜LF的內周端1101的位置,並對該處理液的液膜LF的內周端1101的位置造成大的影響。因此,能藉由變更氣體的噴吹區域的位置而使處理液的液膜LF的內周端1101的位置更有效果地變更。藉此,能更精密地控制著液位置液體寬度W11。 In addition, by changing the position of the spray region 906 in the radial direction RD, the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid is adjusted to a position corresponding to the processing rotation speed. The position of the spray region 906 in the radial direction RD directly affects the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid, and greatly affects the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid. . Therefore, the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid can be changed more effectively by changing the position of the spray area of the gas. Thereby, the liquid width W11 at the liquid position can be controlled more precisely.
圖43以及圖44係示意性地顯示第四實施形態的第六基板處理例的外周部處理步驟(步驟S205、步驟S206)中的處理液噴嘴819以及氣體噴嘴901的狀態之圖。 43 and 44 are diagrams schematically showing states of the processing liquid nozzle 819 and the gas nozzle 901 in the processing steps (steps S205 and S206) of the outer peripheral portion of the sixth substrate processing example of the fourth embodiment.
本第六基板處理例與前述第五基板處理例的差異點在於:在外周部處理步驟(步驟S205、步驟S206)中,不進行著液位置往復移動步驟(處理液噴嘴819的往復移動),而是藉由噴吹區域往復移動步驟使處理液的液膜LF的內周端1101追隨配置位置周端46的位置變化往復移動。配置位置周端46係伴隨著偏心中的基板W的旋轉而在圖43以實線所示的位置(圖44以虛線所示的位置)與在圖44以實線所示的位置之間移動。在此情形中,控制裝置3係依據記憶於各周端徑方向位置記憶部59(參照圖35)的資訊(振幅、週期以及相位(各周端徑方向位置計測步驟(步驟S204)的計測結果)),以處理液的液膜LF的內周端1101會以與 配置位置周端46的位置變化相同的振幅、相同的週期以及相同的相位移動之方式使氣體噴嘴901往復移動。藉此,無須使處理液噴嘴819移動即能將處理液的液膜LF的內周端1101與配置位置周端46之間的距離保持一定。結果,能不受基板W的偏心狀態影響而高度地保持基板W的上表面的外周區域42中的處理寬度的均勻性。 The difference between this sixth substrate processing example and the fifth substrate processing example is that in the peripheral processing steps (steps S205 and S206), the step of reciprocating the landing position (reciprocating movement of the processing liquid nozzle 819) is not performed. Instead, the inner peripheral end 1101 of the liquid film LF of the processing liquid is caused to reciprocate in accordance with the positional change of the position peripheral end 46 by the reciprocating step of the spray region. The arrangement position peripheral end 46 moves between the position shown by the solid line in FIG. 43 (the position shown by the broken line in FIG. 44) and the position shown by the solid line in FIG. 44 with the rotation of the substrate W in the eccentricity. . In this case, the control device 3 is based on the measurement results (amplitude, period, and phase) of each position in the circumferential end radial direction position storage unit 59 (see FIG. 35) (measurement results of each circumferential end radial direction position measurement step (step S204)). )), The gas nozzle 901 is reciprocated in such a manner that the inner peripheral end 1101 of the liquid film LF of the processing liquid moves with the same amplitude, the same period, and the same phase as the position change of the position peripheral end 46. Thereby, the distance between the inner peripheral end 1101 of the liquid film LF of the processing liquid and the peripheral position 46 of the arrangement position can be kept constant without moving the processing liquid nozzle 819. As a result, the uniformity of the processing width in the outer peripheral region 42 of the upper surface of the substrate W can be highly maintained without being affected by the eccentric state of the substrate W.
接著,說明第五實施形態。圖45係用以說明記憶於第五實施形態的資訊記憶部855之旋轉速度-噴吹流量對應表(第四對應關係規定資訊)1007之圖。 Next, a fifth embodiment will be described. FIG. 45 is a diagram for explaining a rotation speed-blow flow correspondence table (fourth correspondence relationship specification information) 1007 stored in the information storage unit 855 of the fifth embodiment.
於旋轉速度-噴吹流量對應1007規定有基板W的旋轉速度(處理旋轉速度)與從氣體噴嘴901噴吹至噴吹區域906之氣體的噴吹流量之間的對應關係,該氣體的噴吹流量係與各旋轉速度對應。藉由旋轉速度-噴吹流量對應1007所規定之「氣體的噴吹流量」係可為噴吹流量,亦可為與該噴吹流量對應之流量調整閥904的開度。 The correspondence between the rotation speed and the injection flow rate 1007 specifies the rotation speed (processing rotation speed) of the substrate W and the injection flow rate of the gas injected from the gas nozzle 901 to the injection region 906. The flow rate corresponds to each rotation speed. The “flow rate of gas” defined by the rotation speed-injection flow rate corresponding to 1007 may be the injecting flow rate or the opening degree of the flow rate adjusting valve 904 corresponding to the injecting flow rate.
一般而言,有隨著基板W的旋轉速度變慢則著液位置液體寬度W11變寬之傾向。此外,隨著噴吹至噴吹區域906的氣體的噴吹流量變多量,處理液的液膜LF的內周端1101係朝徑方向RD的外側被推壓。旋轉速度-噴吹流量對應1007係以下述方式被規定:為了阻止著液位置液體寬度W11變寬而以隨著基板W的旋轉速度變慢將用以將處理液的液膜LF的內周端1101朝徑方向RD的外側按壓之力量增大之方式被規定,亦即以隨著基板W的旋轉速度變慢使氣體的噴吹流量增大之方式被規定。 Generally, as the rotation speed of the substrate W becomes slower, the liquid width W11 at the landing position tends to become wider. In addition, as the spray flow rate of the gas sprayed into the spray region 906 increases, the inner peripheral end 1101 of the liquid film LF of the processing liquid is pushed outward toward the radial direction RD. The rotation speed-blowing flow rate corresponding to the 1007 series is specified in the following manner: In order to prevent the liquid width W11 at the landing position from becoming wider, the inner peripheral end of the liquid film LF of the processing liquid will be used as the rotation speed of the substrate W becomes slower. 1101 A method for increasing the force of pressing outward in the radial direction RD is prescribed, that is, a method for increasing the gas injection flow rate as the rotation speed of the substrate W becomes slower.
圖46係用以說明第五實施形態的第七基板處理例的外周部處理步驟(步驟S205、步驟S206)的內容之流程圖。第五實施形態的第七基板處理例係在外周部藥液處理步驟(步驟S205)中與第四實施形態的第五基板處理例不同。參照圖31、圖35以及圖46說明第七基板處理例的外周部藥液處理步驟(步驟S205)。省略針對第七基板處理例的外周部清洗液處理步驟(步驟S206)。 FIG. 46 is a flowchart for explaining the content of the processing steps (step S205, step S206) in the outer peripheral portion of the seventh substrate processing example of the fifth embodiment. The seventh substrate processing example of the fifth embodiment is different from the fifth substrate processing example of the fourth embodiment in the peripheral chemical solution processing step (step S205). 31, 35, and 46, the processing procedure of the chemical | medical solution of the peripheral part of a 7th board | substrate processing example (step S205) is demonstrated. The step of processing the outer peripheral cleaning liquid for the seventh substrate processing example is omitted (step S206).
在外周部藥液處理步驟(步驟S205)中,控制裝置3係將基板W的旋轉速度設定至處理旋轉速度(步驟S240)。此外,在處理液噴嘴819處於退避位置之情形中,控制裝置3係將處理液噴嘴819配置於上表面的處理位置(圖32所示的位置)(步驟S231)。步驟S240以及步驟S241係分別相當於圖38的步驟S230以及步驟S231。此外,控制裝置3係將氣體噴嘴901配置於預先設定的處理位置。 In the peripheral chemical processing step (step S205), the control device 3 sets the rotation speed of the substrate W to the processing rotation speed (step S240). When the processing liquid nozzle 819 is in the retracted position, the control device 3 arranges the processing liquid nozzle 819 at a processing position (position shown in FIG. 32) on the upper surface (step S231). Steps S240 and S241 correspond to steps S230 and S231 in FIG. 38, respectively. In addition, the control device 3 arranges the gas nozzle 901 at a predetermined processing position.
此外,控制裝置3的運算單元51係參照記憶於資訊記憶部855的旋轉速度-噴吹流量對應表1007(參照圖45),決定與該處理旋轉速度對應之氣體的噴吹流量(來自氣體噴嘴901的噴出流量)(步驟S242)。接著,控制裝置3係控制流量調整閥904,以從氣體噴出口901a噴出經過決定的噴吹流量之方式調整流量調整閥904的開度(步驟S243)。 In addition, the arithmetic unit 51 of the control device 3 refers to the rotation speed-injection flow rate correspondence table 1007 (see FIG. 45) stored in the information storage unit 855, and determines the injection flow rate (from the gas nozzle) of the gas corresponding to the processing rotation speed. The discharge flow rate of 901) (step S242). Next, the control device 3 controls the flow rate adjustment valve 904 and adjusts the opening degree of the flow rate adjustment valve 904 so that the determined injection flow rate is discharged from the gas injection port 901a (step S243).
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉清洗液閥823一邊開啟藥液閥821,藉此從處理液噴嘴819的處理液噴出口819a開始噴出藥液(步驟S244)。此外,控制裝置3係開啟氣體閥903,藉此從氣體噴嘴901 的氣體噴出口901a開始噴出氣體(步驟S244)。藉此,如圖32所示,藥液著液至基板W的上表面的外周區域42並形成有藥液的液膜LF,且從徑方向RD的內側對藥液的液膜LF噴吹氣體。藉此,能良好地控制著液位置液體寬度W1。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the chemical liquid valve 821 while closing the cleaning liquid valve 823, thereby starting to eject the chemical liquid from the processing liquid ejection port 819a of the processing liquid nozzle 819 (step S244). . In addition, the control device 3 opens the gas valve 903, whereby the gas is ejected from the gas ejection port 901a of the gas nozzle 901 (step S244). Thereby, as shown in FIG. 32, the chemical liquid is deposited on the outer peripheral region 42 of the upper surface of the substrate W to form the liquid film LF of the chemical liquid, and the liquid film LF of the chemical liquid is blown from the inside of the radial direction RD. . Thereby, the liquid position W1 of the liquid position can be well controlled.
如圖39以及圖40所示,控制裝置3係執行著液位置往復移動步驟(步驟S245)。著液位置往復移動步驟(步驟S245)係與圖38的步驟S235的著液位置往復移動步驟同等的步驟。再者,控制裝置3係與著液位置往復移動步驟並行地執行噴吹區域往復移動步驟(步驟S245)。噴吹區域往復移動步驟(步驟S245)亦為與圖38的步驟S235的噴吹區域往復移動步驟同等的步驟。 As shown in FIG. 39 and FIG. 40, the control device 3 executes the step of reciprocating the liquid-impacting position (step S245). The dripping position reciprocating step (step S245) is a step equivalent to the dripping position reciprocating step of step S235 in FIG. 38. Further, the control device 3 executes the reciprocating movement of the spray area in parallel with the reciprocating movement of the injection position (step S245). The spray area reciprocating step (step S245) is also the same step as the spray area reciprocating step of step S235 in FIG. 38.
當從開始噴出藥液經過預先設定的期間時(在步驟S246中為是),控制裝置3係分別關閉藥液閥821以及氣體閥903。藉此,停止(結束)從處理液噴嘴819噴出藥液且停止(結束)從氣體噴嘴901噴出氣體(步驟S247)。 When a predetermined period has elapsed from the start of ejection of the chemical liquid (YES in step S246), the control device 3 closes the chemical liquid valve 821 and the gas valve 903, respectively. Thereby, the ejection of the chemical liquid from the processing liquid nozzle 819 is stopped (finished) and the ejection of the gas from the gas nozzle 901 is stopped (finished) (step S247).
藉此,依據第五實施形態,因應基板W的處理旋轉速度調整噴吹至噴吹區域906的氣體的噴吹流量,藉此能將處理液的液膜LF的內周端1101的位置調整至與外周部處理步驟(步驟S205、步驟S206)中的處理旋轉速度對應之位置。藉由調整處理液的液膜LF的內周端1101的位置,亦能將著液位置液體寬度W11調整至適合處理旋轉速度之寬度。因此,不論基板W的旋轉速度為何皆能精密地控制著液位置液體寬度W11。藉此,能不受基板W的旋轉速度影響而能精密地控制基板W的上表面的外周區域42中的處 理寬度。 Thereby, according to the fifth embodiment, the spray flow rate of the gas sprayed to the spray area 906 is adjusted in accordance with the processing rotation speed of the substrate W, so that the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid can be adjusted to The position corresponding to the processing rotation speed in the outer peripheral processing step (step S205, step S206). By adjusting the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid, the liquid width W11 of the liquid landing position can also be adjusted to a width suitable for the processing rotation speed. Therefore, the liquid position W11 of the liquid position can be precisely controlled regardless of the rotation speed of the substrate W. This makes it possible to precisely control the processing width in the outer peripheral region 42 of the upper surface of the substrate W without being affected by the rotation speed of the substrate W.
圖47以及圖48係用以示意性地顯示第五實施形態的第八基板處理例的外周部處理步驟(步驟S205、步驟S206)中的處理液噴嘴819以及氣體噴嘴901的狀態之圖。 47 and 48 are diagrams schematically showing states of the processing liquid nozzle 819 and the gas nozzle 901 in the processing steps (steps S205 and S206) of the outer periphery of the eighth substrate processing example of the fifth embodiment.
該第八基板處理例與前述第七基板處理例的差異點在於:在外周部處理步驟(步驟S205、步驟S206)中,不進行著液位置往復移動步驟(處理液噴嘴819的往復移動)以及噴吹區域往復移動步驟,而是使來自氣體噴嘴901的氣體的噴吹流量變化,藉此使處理液的液膜LF的內周端追隨配置位置周端46的位置變化往復移動。配置位置周端46係伴隨著偏心中的基板W的旋轉而在圖47以實線所示的位置(圖48以虛線所示的位置)與在圖48以實線所示的位置之間移動。在此情形中,控制裝置3係依據記憶於各周端徑方向位置記憶部59(參照圖35)的資訊(振幅、週期以及相位(各周端徑方向位置計測步驟(步驟S204)的計測結果)),以處理液的液膜LF的內周端1101會以與配置位置周端46的位置變化相同的振幅、相同的週期以及相同的相位移動之方式,控制流量調整閥904調整從氣體噴嘴901的氣體噴出口901a噴出之氣體的流量。藉此,無須使處理液噴嘴819移動即能將處理液的液膜LF的內周端1101與配置位置周端46之間的距離保持一定。結果,能不受基板W的偏心狀態影響而高度地保持基板W的上表面的外周區域42中的處理寬度的均勻性。因此,能將處理液的液膜LF的內周端1101與配置位置周端46之間的距離保持一定。 The difference between the eighth substrate processing example and the seventh substrate processing example is that in the peripheral processing steps (steps S205 and S206), the step of reciprocating the landing position (reciprocating movement of the processing liquid nozzle 819) is not performed, and In the spraying area reciprocating step, the spraying flow rate of the gas from the gas nozzle 901 is changed, thereby causing the inner peripheral end of the liquid film LF of the processing liquid to reciprocate in accordance with the positional change of the arrangement position peripheral end 46. The arrangement position peripheral end 46 moves between the position shown by the solid line in FIG. 47 (the position shown by the dotted line in FIG. 48) and the position shown by the solid line in FIG. 48 with the rotation of the substrate W in the eccentricity. . In this case, the control device 3 is based on the measurement results (amplitude, period, and phase) of each position in the circumferential end radial direction position storage unit 59 (see FIG. 35) (measurement results of each circumferential end radial direction position measurement step (step S204)). )), So that the inner peripheral end 1101 of the liquid film LF of the processing liquid will move with the same amplitude, the same period and the same phase as the position change of the positional peripheral end 46, the flow control valve 904 is controlled to adjust the slave gas nozzle The flow rate of the gas ejected from the gas ejection port 901a of 901. Thereby, the distance between the inner peripheral end 1101 of the liquid film LF of the processing liquid and the peripheral position 46 of the arrangement position can be kept constant without moving the processing liquid nozzle 819. As a result, the uniformity of the processing width in the outer peripheral region 42 of the upper surface of the substrate W can be highly maintained without being affected by the eccentric state of the substrate W. Therefore, the distance between the inner peripheral end 1101 of the liquid film LF of the processing liquid and the arrangement position peripheral end 46 can be kept constant.
以上,雖然已說明本發明的第五實施形態,但本發明亦可以其他的形態來實施。 Although the fifth embodiment of the present invention has been described above, the present invention may be implemented in other forms.
例如,在第一實施形態中,亦可如圖7中以虛線所示般,於記憶單元52設置有移動步驟執行旗標56,該移動步驟執行旗標56係用以決定是否在外周部處理步驟(步驟S6、步驟S7)中執行著液位置往復移動步驟(圖14的步驟S33)。於移動步驟執行旗標56選擇性地儲存有與著液位置往復移動步驟的執行對應之預定的值(例如「5A[H]」)以及與著液位置往復移動步驟的非執行對應之預定的值(例如「00[H]」)。而且,在移動步驟執行旗標56儲存有「5A[H]」之情形中,控制裝置3亦可與外周部處理步驟(步驟S6、步驟S7)並行地執行著液位置往復移動步驟;並且,在移動步驟執行旗標56儲存有「00[H]」之情形中,控制裝置3亦可不與外周部處理步驟(步驟S6、步驟S7)並行地執行著液位置往復移動步驟。 For example, in the first embodiment, as shown by a dashed line in FIG. 7, a moving step execution flag 56 may be provided in the memory unit 52, and the moving step execution flag 56 is used to determine whether to process on the outer periphery. In the steps (step S6, step S7), the step of reciprocating the liquid-impacting position is performed (step S33 in FIG. 14). The execution step 56 at the movement step selectively stores predetermined values (for example, "5A [H]") corresponding to the execution of the reciprocating step of the dripping position and the predetermined value corresponding to the non-executing step of the reciprocating stroke of the dripping position. Value (such as "00 [H]"). Further, in a case where "5A [H]" is stored in the movement step execution flag 56, the control device 3 may also execute the reciprocating movement step of the landing position in parallel with the peripheral processing steps (step S6, step S7); and, In the case where "00 [H]" is stored in the movement step execution flag 56, the control device 3 may not perform the reciprocating movement step of the landing position in parallel with the peripheral processing steps (step S6, step S7).
此外,在第一實施形態中,雖然已說明在相位差計測步驟(步驟S5)中求出記憶於相位差記憶部55之複數個相位差△P的全部,但亦可作成在相位差計測步驟(步驟S5)中僅求出與至少一個處理旋轉速度對應之相位差△P,並藉由基於該相位差△P之運算來求出與其他的處理旋轉速度對應之相位差△P。 In addition, in the first embodiment, although it has been described that all of the plurality of phase differences ΔP stored in the phase difference storage unit 55 are obtained in the phase difference measurement step (step S5), it may be performed in the phase difference measurement step. (Step S5) Only a phase difference ΔP corresponding to at least one processing rotation speed is obtained, and a phase difference ΔP corresponding to other processing rotation speeds is obtained by an operation based on the phase difference ΔP.
此外,在第一實施形態中,雖然已說明使用相位差△P的實測值求出排除時序,但記憶於相位差記憶部55的相位差△P亦可非為實測值而是為預先設定的規定值。在此情 形中,亦能從圖11所示的第一基板處理例省略相位差計測步驟(步驟S5)。 In addition, in the first embodiment, although it has been explained that the exclusion timing is obtained using the actual measured value of the phase difference ΔP, the phase difference ΔP stored in the phase difference storage section 55 may be not a measured value but a preset value. Specified value. In this case, the phase difference measurement step can also be omitted from the first substrate processing example shown in FIG. 11 (step S5).
此外,在第一實施形態中,雖然在著液位置往復移動步驟(步驟S33)中使用用以使處理液噴嘴19於徑方向RD往復移動之手法作為用以使著液位置45於徑方向RD往復移動之手法,但亦可以下述方式取代此種手法:改變處理液噴嘴19的噴出方向或者改變處理液噴嘴19的高度位置或者組合處理液噴嘴19朝徑方向RD的移動,藉此使著液位置45於徑方向RD往復移動。此外,雖然採用位置感測器(徑方向位置感測器47)作為各周端位置計測單元,但亦可採用CCD(Charge Coupled Device;電荷耦合元件)攝像機作為周端位置計測單元。 In addition, in the first embodiment, a method for reciprocating the treatment liquid nozzle 19 in the radial direction RD is used in the step of reciprocating the liquid injection position (step S33) as a method for making the liquid injection position 45 in the radial direction RD. The method of reciprocating movement, but it can be replaced by changing the ejection direction of the processing liquid nozzle 19 or changing the height position of the processing liquid nozzle 19 or moving the processing liquid nozzle 19 in the radial direction RD, thereby making The liquid position 45 reciprocates in the radial direction RD. In addition, although a position sensor (radial direction position sensor 47) is used as each peripheral position measurement unit, a CCD (Charge Coupled Device) camera can also be used as the peripheral position measurement unit.
此外,在第二實施形態以及第三實施形態中,例如亦可作成僅在外周部處理步驟(步驟S105、步驟S106)中的基板W的處理旋轉速度為未滿預先設定的速度(例如1300rpm)之情形中執行伴隨著處理液噴嘴419的處理位置(成為基準)的調整之處理液的液膜LF的內周端701的位置的控制(內周端位置調整步驟)或者執行伴隨著來自處理液噴嘴419的處理液的噴出流量的調整之處理液的液膜LF的內周端701的位置的控制(內周端位置調整步驟);在該處理旋轉速度為預先設定的速度(例如1300rpm)以上之情形中,控制裝置3亦可不進行處理液噴嘴419的處理位置(成為基準之位置)的調整或者來自處理液噴嘴419的處理液的噴出流量的調整。在處理旋轉速度未滿1300rpm之情形中,會有已著液 至著液位置45的處理液在著液位置45中膨脹並於基板W的內側擴展之虞。另一方面,在處理旋轉速度為1300rpm以上之情形中,已著液至著液位置45的處理液不會於基板W的內側擴展。亦即,能僅在需要時執行處理液噴嘴419的處理位置(成為基準之位置)的調整或者來自處理液噴嘴419的處理液的噴出流量的調整。 In addition, in the second embodiment and the third embodiment, for example, the processing rotation speed of the substrate W in the processing step (step S105, step S106) only in the outer peripheral portion may be made to be less than a preset speed (for example, 1300 rpm). In this case, the control of the position of the inner peripheral end 701 of the liquid film LF of the processing liquid accompanying the adjustment of the processing position (which becomes the reference) of the processing liquid nozzle 419 (the inner peripheral end position adjustment step) is performed or the control of the position Control of the position of the inner peripheral end 701 of the liquid film LF of the processing liquid for adjusting the discharge flow rate of the processing liquid of the nozzle 419 (inner peripheral end position adjustment step); the processing rotation speed is a preset speed (for example, 1300 rpm) or more In this case, the control device 3 may not adjust the processing position (the position to be a reference) of the processing liquid nozzle 419 or the discharge flow rate of the processing liquid from the processing liquid nozzle 419. In the case where the processing rotation speed is less than 1300 rpm, there is a possibility that the processing liquid that has been deposited to the landing position 45 expands in the landing position 45 and expands inside the substrate W. On the other hand, in a case where the processing rotation speed is 1300 rpm or more, the processing liquid that has been deposited to the deposition position 45 does not spread inside the substrate W. That is, the adjustment of the processing position (the reference position) of the processing liquid nozzle 419 or the adjustment of the discharge flow rate of the processing liquid from the processing liquid nozzle 419 can be performed only when necessary.
此外,在第二實施形態以及第三實施形態中,雖然已說明將旋轉速度-處理位置對應表507或者旋轉速度-噴吹流量對應表607記憶於資訊記憶部455,但亦可作成為將用以表示處理旋轉速度與處理液噴嘴419的處理位置之間的對應關係以及/或者處理旋轉速度與來自處理液噴嘴419的處理液的噴出流量之間的對應關係之地圖(map)記憶至資訊記憶部455,並依據該地圖執行與處理液的液膜LF的內周端701相對之處理液噴嘴419的處理位置(成為基準之位置)的調整或者來自處理液噴嘴419的處理液的噴出流量的調整。 In addition, in the second embodiment and the third embodiment, although it has been described that the rotation speed-processing position correspondence table 507 or the rotation speed-injection flow rate correspondence table 607 is stored in the information storage unit 455, it may also be used A map representing the correspondence between the processing rotation speed and the processing position of the processing liquid nozzle 419 and / or the processing rotation speed and the discharge flow rate of the processing liquid from the processing liquid nozzle 419 is stored into the information memory. The unit 455 adjusts the processing position of the processing liquid nozzle 419 relative to the inner peripheral end 701 of the liquid film LF of the processing liquid (the position serving as a reference) or the discharge flow rate of the processing liquid from the processing liquid nozzle 419 according to the map. Adjustment.
此外,亦可組合第二實施形態以及第三實施形態。亦即,亦可作成為在內周端位置調整步驟中因應處理旋轉速度來調整處理液噴嘴419的處理位置以及從處理液噴嘴419噴出的處理液的噴出流量的雙方。 In addition, the second embodiment and the third embodiment may be combined. That is, both the processing position of the processing liquid nozzle 419 and the discharge flow rate of the processing liquid sprayed from the processing liquid nozzle 419 may be adjusted in accordance with the processing rotation speed in the inner peripheral end position adjusting step.
此外,在第四實施形態以及第五實施形態中,亦可作成僅在外周部處理步驟(步驟S105、步驟S106)中的基板W的處理旋轉速度為未滿預先設定的速度(例如1300rpm)之情形中執行藉由朝處理液的液膜LF噴吹氣體所為之處理 液的液膜LF的內周端1101的位置的控制(內周端位置調整步驟);在該處理旋轉速度為預先設定的速度(例如1300rpm)以上之情形中,控制裝置3亦可不進行對處理液的液膜LF的內周端1101噴吹氣體。在處理旋轉速度未滿1300rpm之情形中,會有已著液至著液位置45的處理液在著液位置45中膨脹並於基板W的內側擴展之虞。另一方面,在處理旋轉速度為1300rpm以上之情形中,已著液至著液位置45的處理液不會於基板W的內側擴展。因此,能僅在需要時執行對處理液的液膜LF的內周端1101噴吹氣體。 In addition, in the fourth embodiment and the fifth embodiment, the processing rotation speed of the substrate W only in the outer peripheral processing step (step S105, step S106) may be made to be less than a preset speed (for example, 1300 rpm). In this case, control of the position of the inner peripheral end 1101 of the liquid film LF of the processing liquid for which the gas is sprayed toward the liquid film LF of the processing liquid (inner peripheral end position adjustment step) is performed; in this processing, the rotation speed is set in advance In the case of a speed (for example, 1300 rpm) or more, the control device 3 may not perform gas injection on the inner peripheral end 1101 of the liquid film LF of the processing liquid. In the case where the processing rotation speed is less than 1300 rpm, there is a possibility that the processing liquid that has been deposited to the landing position 45 expands in the landing position 45 and expands inside the substrate W. On the other hand, in a case where the processing rotation speed is 1300 rpm or more, the processing liquid that has been deposited to the deposition position 45 does not spread inside the substrate W. Therefore, it is possible to perform gas injection to the inner peripheral end 1101 of the liquid film LF of the processing liquid only when necessary.
此外,在第四實施形態以及第五實施形態中,雖然已說明將旋轉速度-噴吹區域位置對應表907或者旋轉速度-噴吹流量對應表1007記憶於資訊記憶部855,但亦可作成為將用以表示處理旋轉速度與噴吹區域906的位置之間的對應關係以及/或者處理旋轉速度與朝噴吹區域906的氣體的噴吹流量之間的對應關係之地圖記憶至資訊記憶部855,並依據該地圖執行針對處理液的液膜LF的內周端1101噴吹氣體。 In addition, in the fourth embodiment and the fifth embodiment, although it has been described that the rotation speed-injection region position correspondence table 907 or the rotation speed-injection flow rate correspondence table 1007 is stored in the information storage unit 855, it may be used as A map representing the correspondence between the processing rotation speed and the position of the injection area 906 and / or the correspondence between the processing rotation speed and the injection flow rate of the gas toward the injection area 906 is stored in the information storage unit 855 According to the map, a gas injection is performed on the inner peripheral end 1101 of the liquid film LF of the processing liquid.
此外,在第四實施形態以及第五實施形態中,氣體噴出口901a亦可非為圓弧狀的隙縫,而是可用例如直線狀的隙縫來構成。此外,亦可藉由複數個噴出孔來構成氣體噴出口901a。 In addition, in the fourth embodiment and the fifth embodiment, the gas ejection port 901a may not be an arc-shaped slit, but may be configured by a linear slit, for example. In addition, the gas ejection port 901a may be configured by a plurality of ejection holes.
此外,在第四實施形態以及第五實施形態中,亦可將氣體噴嘴901一體性地設置於對向構件(例如氣體噴出噴嘴27(參照圖31))的外周部,該對向構件係隔著間隔與基板W 的上表面的中央部對向。 In addition, in the fourth embodiment and the fifth embodiment, the gas nozzle 901 may be integrally provided on an outer peripheral portion of a facing member (for example, the gas ejection nozzle 27 (see FIG. 31)), and the facing member is partitioned. The gap is opposed to the center of the upper surface of the substrate W.
此外,在第四實施形態以及第五實施形態中,亦可作成為在內周端位置調整步驟中調整氣體的噴吹區域906的位置以及噴吹流量的雙方。 In addition, in the fourth embodiment and the fifth embodiment, both the position of the gas injection region 906 and the injection flow rate may be adjusted in the inner peripheral end position adjustment step.
此外,在第一實施形態至第五實施形態中,雖然使用用以使處理液噴嘴19、419、819於徑方向RD往復移動之手法作為用以使著液位置45於徑方向RD往復移動之手法,但亦可以下述方式取代此種手法:改變處理液噴嘴19、419、819的噴出方向或者改變處理液噴嘴19、419、819的高度位置或者組合處理液噴嘴19、419、819朝徑方向RD的移動,藉此使著液位置45於徑方向RD往復移動。 In addition, in the first to fifth embodiments, a method for reciprocating the processing liquid nozzles 19, 419, and 819 in the radial direction RD is used as a method for reciprocating the liquid injection position 45 in the radial direction RD. Method, but this method can also be replaced by changing the ejection direction of the processing liquid nozzles 19, 419, 819, or changing the height position of the processing liquid nozzles 19, 419, 819, or combining the processing liquid nozzles 19, 419, 819 toward the diameter The movement in the direction RD thereby reciprocates the liquid injection position 45 in the radial direction RD.
此外,在第一實施形態至第五實施形態中,雖然以用以使處理液噴嘴419一邊描繪圓弧軌跡一邊移動之掃描形式作為噴嘴驅動機構的例子,但亦可採用用以使處理液噴嘴419直線狀地移動之直線移動形式作為噴嘴驅動機構。 In addition, in the first to fifth embodiments, although the scanning form for moving the processing liquid nozzle 419 while drawing a circular arc track is taken as an example of the nozzle driving mechanism, the processing liquid nozzle may be used. 419 A linear movement form that moves linearly is used as a nozzle driving mechanism.
在第五實施形態中,雖然以用以使氣體噴嘴901一邊描繪圓弧軌跡一邊移動之掃描形式為例,但亦可採用用以使氣體噴嘴901直線狀地移動之直線移動形式。 In the fifth embodiment, the scanning form for moving the gas nozzle 901 while drawing the arc track is taken as an example, but a linear moving form for linearly moving the gas nozzle 901 may be used.
此外,在第一實施形態至第五實施形態中,亦可執行用以計測基板W的周方向的各周端位置中之屬於高度位置的各周端高度位置之各周端高度位置計測步驟作為周端位置計測步驟,以取代各周端徑方向位置計測步驟(步驟S4、步驟S104、步驟S204)。在此情形中,亦可設置有用以檢測被自轉夾具5保持的基板W的周端的高度位置之高 度位置感測器(位置感測器)147,並依據高度位置感測器147的檢測輸出計測各周端高度位置。此外,並未限定於位置感測器,亦可作成為使用CCD攝像機計測基板W的周方向的各周端位置。 In addition, in the first embodiment to the fifth embodiment, each of the peripheral end height position measurement steps for measuring the peripheral end height position of the height position among the peripheral end positions in the peripheral direction of the substrate W may be performed as The peripheral end position measurement step replaces each peripheral end radial direction position measurement step (step S4, step S104, step S204). In this case, a height position sensor (position sensor) 147 for detecting the height position of the peripheral end of the substrate W held by the rotation jig 5 may be provided and measured based on the detection output of the height position sensor 147. Height position at each peripheral end. In addition, it is not limited to a position sensor, and it can also be set as the position of each peripheral edge of the board | substrate W in the circumferential direction using a CCD camera.
此外,在第二實施形態至第五實施形態中,在外周部處理步驟(步驟S105、步驟S106、步驟S205、步驟S206)中亦可不使處理液的著液位置45或處理液的液膜LF的周端301、701往復移動。亦即,亦可作成為藉由變更來自處理液噴嘴419的處理液的噴出流量而細緻地控制著液位置液體寬度W1,亦可作成為從徑方向RD的內側對處理液的液膜LF噴吹氣體並縮小著液位置液體寬度W11。 In addition, in the second embodiment to the fifth embodiment, in the peripheral processing steps (step S105, step S106, step S205, step S206), the injection position 45 of the treatment liquid or the liquid film LF of the treatment liquid may not be made. The peripheral ends 301, 701 move back and forth. That is, it can be used to finely control the liquid position liquid width W1 by changing the discharge flow rate of the processing liquid from the processing liquid nozzle 419, or it can be used to spray the liquid film LF of the processing liquid from the inside of the radial direction RD. Blow the gas and reduce the liquid width W11 at the landing position.
此外,雖然已舉例說明處理液噴嘴4、419、819為用以噴出藥液以及清洗液兩者,但亦可個別地設置有用以噴出藥液之處理液噴嘴(藥液噴嘴)以及用以噴出清洗液之處理液噴嘴(清洗液噴嘴)。 In addition, although the treatment liquid nozzles 4, 419, and 819 have been exemplified to be used to discharge both the chemical liquid and the cleaning liquid, a treatment liquid nozzle (medicine liquid nozzle) for discharging the chemical liquid and to be used for spraying may be separately provided Treatment liquid nozzle (cleaning liquid nozzle) of the cleaning liquid.
此外,在第一實施形態至第五實施形態中,雖然已說明基板處理裝置為用以處理圓板狀的基板W,但處理對象的基板W只要為周端的至少一部分作成圓弧狀即可,不一定需要為真圓。 In addition, in the first to fifth embodiments, although the substrate processing apparatus has been described as processing a disc-shaped substrate W, the substrate W to be processed may be formed into an arc shape for at least a part of the peripheral end. It does not need to be true.
雖然已針對本發明的實施形態詳細地說明,但這是實施形態僅為用以明瞭本發明的技術性內容之具體例,本發明不應被這些具體例界定地解釋,本發明的範圍僅被隨附的申請專利範圍所界定。 Although the embodiments of the present invention have been described in detail, the embodiments are only specific examples for clarifying the technical contents of the present invention, and the present invention should not be interpreted by these specific examples. The scope of the present invention is only limited by Defined by the scope of the accompanying patent application.
本發明係分別與於2017年2月28日分別於日本特許 廳所提出之日本特願2017-037560號、日本特願2017-037561號以及日本特願2017-037563號對應,並將這些申請案的所有內容援用於此。 The present invention corresponds to Japanese Patent Application No. 2017-037560, Japanese Patent Application No. 2017-037561, and Japanese Patent Application No. 2017-037563, respectively, which were filed at the Japan Patent Office on February 28, 2017, and applies these applications Everything is used here.
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JP2017-037563 | 2017-02-28 | ||
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TWI727461B (en) * | 2018-11-07 | 2021-05-11 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
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