TWI721045B - 包含一基材及一第一溫度測量元件的半導體構件以及測定流經一半導體構件之電流的方法以及車輛用的控制單元 - Google Patents

包含一基材及一第一溫度測量元件的半導體構件以及測定流經一半導體構件之電流的方法以及車輛用的控制單元 Download PDF

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TWI721045B
TWI721045B TW105138550A TW105138550A TWI721045B TW I721045 B TWI721045 B TW I721045B TW 105138550 A TW105138550 A TW 105138550A TW 105138550 A TW105138550 A TW 105138550A TW I721045 B TWI721045 B TW I721045B
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Taiwan
Prior art keywords
semiconductor component
temperature measuring
temperature
measuring element
current
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TW105138550A
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English (en)
Chinese (zh)
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TW201723447A (zh
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尤阿辛 裘斯
艾姆登 沃特 馮
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德商羅伯特博斯奇股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)
TW105138550A 2015-11-26 2016-11-24 包含一基材及一第一溫度測量元件的半導體構件以及測定流經一半導體構件之電流的方法以及車輛用的控制單元 TWI721045B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015223470.3A DE102015223470A1 (de) 2015-11-26 2015-11-26 Halbleiterbauelement mit einem Substrat und einem ersten Temperaturmesselement sowie Verfahren zum Bestimmen eines durch ein Halbleiterbauelement fließenden Stromes sowie Steuergerät für ein Fahrzeug
DE102015223470.3 2015-11-26

Publications (2)

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TW201723447A TW201723447A (zh) 2017-07-01
TWI721045B true TWI721045B (zh) 2021-03-11

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TW105138550A TWI721045B (zh) 2015-11-26 2016-11-24 包含一基材及一第一溫度測量元件的半導體構件以及測定流經一半導體構件之電流的方法以及車輛用的控制單元

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EP (1) EP3380821A1 (de)
JP (1) JP6824271B2 (de)
CN (1) CN108291843B (de)
DE (1) DE102015223470A1 (de)
TW (1) TWI721045B (de)
WO (1) WO2017089018A1 (de)

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* Cited by examiner, † Cited by third party
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CN110534509A (zh) * 2018-05-24 2019-12-03 苏州东微半导体有限公司 半导体功率器件
DE102022204800B3 (de) * 2022-05-16 2023-09-28 Volkswagen Aktiengesellschaft Vorrichtung und Verfahren zur Bestimmung eines Alterungszustandes mindestens eines Leistungshalbleiterschalters

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US20130257329A1 (en) * 2012-03-30 2013-10-03 Christoph Orou Junction temperature measurement of a power mosfet
DE102014100122B3 (de) * 2014-01-08 2015-04-16 Zf Lenksysteme Gmbh Ermittlung der Sperrschichttemperatur eines Fet durch die Bodydiode
US20160011058A1 (en) * 2014-07-11 2016-01-14 Infineon Technologies Ag Integrated temperature sensor for discrete semiconductor devices
US9658118B2 (en) * 2012-11-16 2017-05-23 Linear Technology Corporation Precision temperature measurement devices, sensors, and methods

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JPH03187254A (ja) * 1989-12-15 1991-08-15 Mitsubishi Electric Corp 集積回路の熱的保護回路
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JP5226248B2 (ja) * 2006-08-02 2013-07-03 ルネサスエレクトロニクス株式会社 温度検出回路及び半導体装置
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DE102011001185A1 (de) * 2011-03-10 2012-09-13 Zf Lenksysteme Gmbh Strommessung ohne Shunt-Widerstände
US20130257329A1 (en) * 2012-03-30 2013-10-03 Christoph Orou Junction temperature measurement of a power mosfet
US9658118B2 (en) * 2012-11-16 2017-05-23 Linear Technology Corporation Precision temperature measurement devices, sensors, and methods
DE102014100122B3 (de) * 2014-01-08 2015-04-16 Zf Lenksysteme Gmbh Ermittlung der Sperrschichttemperatur eines Fet durch die Bodydiode
US20160011058A1 (en) * 2014-07-11 2016-01-14 Infineon Technologies Ag Integrated temperature sensor for discrete semiconductor devices

Also Published As

Publication number Publication date
DE102015223470A1 (de) 2017-06-01
CN108291843B (zh) 2021-04-13
JP2018536858A (ja) 2018-12-13
EP3380821A1 (de) 2018-10-03
TW201723447A (zh) 2017-07-01
CN108291843A (zh) 2018-07-17
JP6824271B2 (ja) 2021-02-03
WO2017089018A1 (de) 2017-06-01

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