TWI699458B - 引線框架材及其製造方法 - Google Patents

引線框架材及其製造方法 Download PDF

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Publication number
TWI699458B
TWI699458B TW105134728A TW105134728A TWI699458B TW I699458 B TWI699458 B TW I699458B TW 105134728 A TW105134728 A TW 105134728A TW 105134728 A TW105134728 A TW 105134728A TW I699458 B TWI699458 B TW I699458B
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TW
Taiwan
Prior art keywords
layer
vertical
roughened
alloy
lead frame
Prior art date
Application number
TW105134728A
Other languages
English (en)
Chinese (zh)
Other versions
TW201726983A (zh
Inventor
小林良聡
橋本真
柴田邦夫
Original Assignee
日商古河電氣工業股份有限公司
日商古河精密金屬工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商古河電氣工業股份有限公司, 日商古河精密金屬工業股份有限公司 filed Critical 日商古河電氣工業股份有限公司
Publication of TW201726983A publication Critical patent/TW201726983A/zh
Application granted granted Critical
Publication of TWI699458B publication Critical patent/TWI699458B/zh

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Electroplating Methods And Accessories (AREA)
TW105134728A 2015-11-05 2016-10-27 引線框架材及其製造方法 TWI699458B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2015-217890 2015-11-05
JP2015217890 2015-11-05

Publications (2)

Publication Number Publication Date
TW201726983A TW201726983A (zh) 2017-08-01
TWI699458B true TWI699458B (zh) 2020-07-21

Family

ID=58661950

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105134728A TWI699458B (zh) 2015-11-05 2016-10-27 引線框架材及其製造方法

Country Status (5)

Country Link
JP (1) JP6789965B2 (fr)
KR (1) KR102529295B1 (fr)
CN (1) CN108026657B (fr)
TW (1) TWI699458B (fr)
WO (1) WO2017077903A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019181924A1 (fr) * 2018-03-23 2019-09-26 古河電気工業株式会社 Matériau de grille de connexion, son procédé de fabrication, et boîtier de semi-conducteur l'utilisant
JP6805217B2 (ja) * 2018-10-18 2020-12-23 Ｊｘ金属株式会社 導電性材料、成型品及び電子部品
JP7014695B2 (ja) * 2018-10-18 2022-02-01 Ｊｘ金属株式会社 導電性材料、成型品及び電子部品
JP7292776B2 (ja) * 2020-01-30 2023-06-19 大口マテリアル株式会社 リードフレーム
WO2023286697A1 (fr) * 2021-07-16 2023-01-19 古河電気工業株式会社 Matériau de grille de connexion et son procédé de production, et boîtier de semi-conducteur
CN117043940A (zh) * 2021-07-16 2023-11-10 古河电气工业株式会社 引线框架材料及其制造方法、以及半导体封装

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201034147A (en) * 2009-03-12 2010-09-16 Lg Innotek Co Ltd Lead frame and method for manufacturing the same
TW201111562A (en) * 2009-07-14 2011-04-01 Furukawa Electric Co Ltd Copper foil with resistive layer, production method therefor, and layered substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2543619B2 (ja) 1990-09-05 1996-10-16 新光電気工業株式会社 半導体装置用リ―ドフレ―ム
JP3228789B2 (ja) 1992-07-11 2001-11-12 新光電気工業株式会社 樹脂用インサート部材の製造方法
JPH1027873A (ja) 1996-07-11 1998-01-27 Nippon Koujiyundo Kagaku Kk 半導体装置用リードフレーム
JPH1070224A (ja) * 1996-08-27 1998-03-10 Daido Steel Co Ltd Ｉｃリードフレーム材およびその製造方法
US6342308B1 (en) * 1999-09-29 2002-01-29 Yates Foil Usa, Inc. Copper foil bonding treatment with improved bond strength and resistance to undercutting
JP2004034524A (ja) * 2002-07-03 2004-02-05 Mec Kk 金属樹脂複合体およびその製造方法
JP5282675B2 (ja) * 2009-06-23 2013-09-04 日立電線株式会社 プリント配線板用銅箔およびその製造方法
KR20120089567A (ko) * 2009-06-24 2012-08-13 후루카와 덴키 고교 가부시키가이샤 광반도체 장치용 리드 프레임, 광반도체 장치용 리드 프레임의 제조방법, 및 광반도체 장치
JP5387374B2 (ja) * 2009-12-04 2014-01-15 住友金属鉱山株式会社 リードフレームの製造方法
JP5555146B2 (ja) * 2010-12-01 2014-07-23 株式会社日立製作所 金属樹脂複合構造体及びその製造方法、並びにバスバ、モジュールケース及び樹脂製コネクタ部品
KR102088267B1 (ko) * 2012-10-05 2020-03-12 후루카와 덴키 고교 가부시키가이샤 은 반사막, 광반사 부재, 및 광반사 부재의 제조방법
JP6511225B2 (ja) * 2013-04-26 2019-05-15 Ｊｘ金属株式会社 高周波回路用銅箔、高周波回路用銅張積層板、高周波回路用プリント配線板、高周波回路用キャリア付銅箔、電子機器、及びプリント配線板の製造方法
JP6445895B2 (ja) * 2014-03-04 2018-12-26 Ｄｏｗａメタルテック株式会社 Ｓｎめっき材およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201034147A (en) * 2009-03-12 2010-09-16 Lg Innotek Co Ltd Lead frame and method for manufacturing the same
TW201111562A (en) * 2009-07-14 2011-04-01 Furukawa Electric Co Ltd Copper foil with resistive layer, production method therefor, and layered substrate

Also Published As

Publication number Publication date
CN108026657A (zh) 2018-05-11
JP6789965B2 (ja) 2020-11-25
WO2017077903A1 (fr) 2017-05-11
TW201726983A (zh) 2017-08-01
CN108026657B (zh) 2020-05-26
KR102529295B1 (ko) 2023-05-08
KR20180079291A (ko) 2018-07-10
JPWO2017077903A1 (ja) 2018-08-16

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