TWI694566B - 半導體封裝載板及其製法與電子封裝件 - Google Patents

半導體封裝載板及其製法與電子封裝件 Download PDF

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TWI694566B
TWI694566B TW108119732A TW108119732A TWI694566B TW I694566 B TWI694566 B TW I694566B TW 108119732 A TW108119732 A TW 108119732A TW 108119732 A TW108119732 A TW 108119732A TW I694566 B TWI694566 B TW I694566B
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layer
heat dissipation
openings
circuit structure
insulating heat
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TW108119732A
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English (en)
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TW202046473A (zh
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周保宏
余俊賢
許詩濱
陳文彰
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恆勁科技股份有限公司
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Priority to TW108119732A priority Critical patent/TWI694566B/zh
Application granted granted Critical
Publication of TWI694566B publication Critical patent/TWI694566B/zh
Priority to CN202010448750.0A priority patent/CN112054007A/zh
Priority to US16/893,562 priority patent/US11404348B2/en
Publication of TW202046473A publication Critical patent/TW202046473A/zh

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Abstract

一種半導體封裝載板及其製法，該製法係包括於線路結構上形成石墨烯層以作為絕緣散熱層，故藉由該石墨烯層之導熱率遠大於防焊用之油墨約為0.4W/m‧k之導熱率，使該半導體封裝載板之導熱速度極快，因而能有效避免熱能積累於該半導體封裝載板之問題。本發明復提供一種應用該半導體封裝載板之電子封裝件。

Description

半導體封裝載板及其製法與電子封裝件
本發明係有關一種封裝基材，尤指一種具快速散熱功能之半導體封裝載板及其製法與電子封裝件。
隨著產業應用的發展，近年來逐漸朝著如人工智慧(AI)晶片、高階晶片或堆疊晶片等大尺寸晶片之封裝規格之趨勢進行研發，如3D或2.5D IC製程，以應用於高密度線路/高傳輸速度/高疊層數/大尺寸設計之高階產品，如人工智慧(AI)晶片、GPU等。
因此，業界遂改用大尺寸版面的覆晶封裝基板，如40*40、70*70或其它厚大結構之板型，以承載如人工智慧(AI)晶片、高階晶片或堆疊晶片等大尺寸晶片。
如第1A圖所示，習知覆晶封裝基板1係包括：一線路結構10、以及設於該線路結構10外側之防焊層12a,12b，其中，該線路結構10之最外側係具有複數焊墊11a,11b，以令該防焊層12a,12b外露出該複數焊墊11a,11b，俾供作為接點(即I/O)，以於上側(如第1B圖所示之置晶側) 接置半導體晶片(圖略)及於下側(如第1C圖所示之植球側或BGA)接置電路板(圖略)，而製成電子封裝產品。
習知覆晶封裝基板1在進行半導體封裝過程及在應用端運轉中所產生的熱能，若散失太慢，會使整個電子封裝產品升溫而損壞或影響效能。
惟，習知覆晶封裝基板1中，該防焊層12a,12b係以油墨或綠漆形成者，其導熱率僅約0.2至0.4W/m．k，致使該覆晶封裝基板1之導熱速度極慢，因而造成熱能積累於該覆晶封裝基板1上，導致該覆晶封裝基板1難以符合散熱需求，進而影響該電子封裝產品之整體效能與壽命。
因此，如何克服上述習知技術之種種問題，實已成為目前業界亟待克服之難題。
鑑於上述習知技術之缺失，本發明提供一種一種半導體封裝載板，係包括：線路結構，係具有相對之第一側與第二側，其中，該線路結構係包含至少一介電層及結合該介電層之線路層；以及絕緣散熱層，係設於該線路結構之第一側及/或第二側上，且露出該線路結構之第一側及/或第二側之部分線路層，其中，該絕緣散熱層係為石墨烯層。
前述之半導體封裝載板中，復包括一為導電材或非導電材之剛性層，其藉由一結合材結合於該線路結構之第二側，該剛性層並設有複數開孔以露出該線路結構之第二側之部分線路層，且在該該剛性層非結合面上及該複數開孔中之孔壁上均設有絕緣散熱層，又該複數開孔中露出 之部分線路層上未設有該絕緣散熱層。例如，復包括複數導電元件，其結合於該線路結構之第一側之部分線路層及/或該剛性層之該複數開孔中之線路層上，且該複數導電元件接觸該絕緣散熱層。
前述之半導體封裝載板中，復包括複數導電元件，其結合於該線路結構之第一側及/或第二側外露之線路層上，且該複數導電元件接觸該絕緣散熱層。
本發明亦提供一種電子封裝件，係包括：如前述之半導體封裝載板；複數導電元件，係結合於該線路結構之第一側及/或第二側露出之部分線路層上，且該複數導電元件接觸該絕緣散熱層；電子元件，係覆晶接置於該線路結構之第一側之複數導電元件上；以及封裝層，係設於該半導體封裝載板上，以將該電子元件結合至該半導體封裝載板上。
前述之電子封裝件中，復包括一為導電材或非導電材之剛性層，其藉由一結合材結合於該線路結構之第二側，該剛性層並設有複數開孔以露出該線路結構之第二側之部分線路層，且在該剛性層非結合面上及該複數開孔中之孔壁上均設有絕緣散熱層，又該複數開孔中露出之部分線路層上未設有該絕緣散熱層，以令該複數導電元件結合於該線路結構之第二側之外露之線路層，並使該複數導電元件接觸該絕緣散熱層。
本發明復提供一種半導體封裝載板之製法，係包括：提供一具有相對之第一側與第二側之線路結構，其中，該線路結構係包含至少一介電層及結合該介電層之線路層；以及形成絕緣散熱層於該線路結構之第一側及/或第二側上，且露出該線路結構之第一側及/或第二側之部分線路層，其中，該絕緣散熱層係為石墨烯層。
前述之製法中，復包括將一為導電材或非導電材之剛性層藉由一結合材結合於該線路結構之第二側上，且於該剛性層上形成複數開 孔以露出該線路結構之第二側之部分線路層，再以該絕緣散熱層包覆該剛性層及其開孔，之後移除該開孔中之線路層上之該絕緣散熱層，並且保留該開孔中孔壁上之絕緣散熱層。例如，該線路結構之第一側之部分線路層及/或該剛性層之該開孔中之線路層上係結合有複數導電元件，且該複數導電元件接觸該絕緣散熱層。
前述之製法中，該線路結構之第一側及/或第二側外露之線路層上係結合有複數導電元件，且該複數導電元件接觸該絕緣散熱層。
由上可知，本發明之半導體封裝載板及其製法與電子封裝件中，主要藉由將高導熱率之石墨烯層作為絕緣散熱層(或防焊結構)，以增加該半導體封裝載板之散熱性，故相較於習知技術，本發明之電子封裝件及其半導體封裝載板之散熱速度極快，因而不僅能提升整體電子產品效能，且能應用於需高散熱需求之高功率產品，使電子產品能發揮應有的效能。
1‧‧‧覆晶封裝基板
10‧‧‧線路結構
11a,11b‧‧‧焊墊
12a,12b‧‧‧防焊層
2,3‧‧‧半導體封裝載板
2a‧‧‧線路結構
2b,32‧‧‧絕緣散熱層
20‧‧‧核心層
20a‧‧‧第一側
20b‧‧‧第二側
200‧‧‧導電部
21‧‧‧增層部
210‧‧‧介電層
211‧‧‧線路層
212‧‧‧焊墊
22‧‧‧開孔
3b‧‧‧防焊結構
320‧‧‧第二開孔
33‧‧‧剛性層
330‧‧‧第一開孔
34‧‧‧結合材
4,4’‧‧‧電子封裝件
40‧‧‧電子元件
400,42‧‧‧導電元件
41‧‧‧封裝層
第1A圖係為習知覆晶封裝基板之剖視示意圖。
第1B圖係為第1A圖之上視示意圖。
第1C圖係為第1A圖之下視示意圖。
第2A至2C圖係為本發明之半導體封裝載板之第一實施例之製法之剖視示意圖。
第2D圖係為本發明之電子封裝件之第一實施例之剖視示意圖。
第3A至3D圖係為本發明之半導體封裝載板之第二實施例之製法之剖視示意圖。
第3E圖係為本發明之電子封裝件之第二實施例之剖視示意圖。
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當視為本發明可實施之範疇。
第2A至2C圖係為本發明之半導體封裝載板2之第一實施例之製法之剖視示意圖。
如第2A圖所示，提供一線路結構2a，且該線路結構2a係具有相對之第一側20a與第二側20b，其兩側上均可用於置放電子元件(如 半導體晶片、被動元件等)，且將置放半導體晶片之外接側稱為置晶側，故為了方便以下說明，係將該第一側20a作為置晶側。
於本實施例中，該線路結構2a係具有一核心層20，其內形成有複數導電部200。例如，形成該核心層20之材質係採用含玻纖及有機樹脂之基材，如BT(Bismaleimide Triazine)、FR4或FR5等，亦或採用高剛性無玻纖但含有填充材(filler)(如SiO2)之有機基材，再於其上進行導通孔製程，如機械鑽孔或雷射鑽孔等成孔步驟，並於孔中形成導電材。或者，該導電部200可由單一導電柱體或由複數相互接觸堆疊之導電柱體所組成。
再者，該線路結構2a復包括設於該核心層20上之增層部21，其具有至少一介電層210及複數結合該介電層210之線路層211，且最外層之線路層211係具有複數焊墊212。例如，該介電層210可為液狀環氧樹脂、膜狀ABF、預浸材、模壓樹脂(EMC)或感光型樹脂形成。應可理解地，有關該線路層211之佈設層數可依需求設計。
又，於另一實施例中，該線路結構2a之核心層20可改為矽基材，以令該介電層210與該線路層211設於該矽基材上，使該線路結構2a成為矽中介板(silicon interposer)形式。或者，於其它實施例中，該線路結構2a可為無核心層(coreless)形式。
如第2B圖所示，形成一絕緣散熱層2b於該線路結構2a之第一側20a及第二側20b上，以作為防焊結構，其中，該絕緣散熱層2b之導熱率係大於0.4W/m‧k，即大於習知油墨或綠漆之導熱率。
於本實施例中，該絕緣散熱層2b係為一石墨烯層，其導熱率係為5300W/m．k。然而，有關該防焊結構之構造可依需求設計，並不限於上述。
再者，該絕緣散熱層2b係塗附於該線路結構2a之第一側20a及第二側20b之全部表面上。
如第2C圖所示，形成複數開孔22於該絕緣散熱層2b上，以令該複數焊墊212外露於該複數開孔22。
於本實施例中，該絕緣散熱層2b係形成於該線路結構2a之第一側20a及第二側20b上，但於其它實施例中，該絕緣散熱層2b亦可依需求僅形成於該線路結構2a之第一側20a或第二側20b上。
再者，於後續應用該半導體封裝載板2時，如第2D圖所示之電子封裝件4，可於該線路結構2a之第一側20a之外露焊墊212上設置至少一電子元件40，並形成封裝層41於該第一側20a上以結合該電子元件40；或者，可於該半導體封裝載板2之第二側20b之外露焊墊212上接置如焊錫球之導電元件42以結合至一電路板(圖略)上。
所述之電子元件40係為主動元件、被動元件或其二者組合，其中，該主動元件係例如半導體晶片，且該被動元件係例如電阻、電容及電感。例如，該電子元件40係為半導體晶片，其藉由複數含焊錫凸塊之導電元件400以覆晶方式電性連接該半導體封裝載板2之焊墊212。或者，該電子元件亦可藉由複數焊線(圖略)以打線方式電性連接該焊墊212。然而，有關該電子元件電性連接該半導體封裝載板2之方式不限於上述，且該電子元件亦可設於該第二側20b上或嵌埋於該增層部21中。
所述之封裝層41可為底膠，其形成於該半導體封裝載板2之第一側20a與該電子元件40之間以包覆該複數導電元件400。或者，該封裝層可為壓合製程用之薄膜、模壓製程用之封裝膠體或印刷製程用之膠材等以包覆該電子元件40與該複數導電元件400，且形成該封裝層之材質係 為聚醯亞胺(PI)、環氧樹脂(epoxy)或模封之封裝材。應可理解地，有關該電子元件40之封裝方式並不限於上述。
因此，本實施例之半導體封裝載板2係以高導熱材(如石墨烯)取代習知油墨或綠漆材，使該絕緣散熱層2b的導熱率極快，其可較習知油墨或綠漆材快1.5萬倍，故該絕緣散熱層2b不僅具有防焊功能，且可加速該半導體封裝載板2的熱能散逸效果，使該電子封裝件4之整體效能與使用壽命更穩定。
再者，該複數導電元件400,42係接觸該絕緣散熱層2b，故該電子封裝件4之熱能可透過該複數導電元件400,42經由該絕緣散熱層2b而快速散逸熱能，因而更能有效提升該電子封裝件4之整體效能與使用壽命。
第3A至3D圖係為本發明之半導體封裝載板3之第二實施例之製法之剖視示意圖。本實施例與第一實施例之差異在於該防焊結構，其它構造大致相同，故以下僅說明相異處。
如第3A圖所示，於該線路結構2a之第二側20b上以結合材34結合一為導電材或非導電材之剛性層33。
於本實施例中，該剛性層33係為鋼板、鎳合金(alloy 42)片體、高剛性之陶瓷材(如Al2O3或AlN)、塑膠、碳纖或其它高剛性之非導電材等，且該結合材34係為黏著膠材。
如第3B圖所示，於該剛性層33上形成複數第一開孔330，且該複數第一開孔330延伸穿過該結合材34，以令該複數焊墊212外露於該複數第一開孔330。
如第3C圖所示，形成一絕緣散熱層32於該焊墊212、該剛性層33之非結合面及該第一開孔330之孔壁上以包覆該剛性層33。
於本實施例中，該絕緣散熱層32之導熱率係大於0.4W/m˙k，即大於習知油墨或綠漆之導熱率，例如石墨烯層。
再者，該絕緣散熱層32亦形成於該線路結構2a之第一側20a上。
如第3D圖所示，於該第二側20b上之絕緣散熱層32上形成複數第二開孔320，以令該複數焊墊212外露於該複數第二開孔320，使該絕緣散熱層32與該剛性層33作為防焊結構3b，其中，該複數第二開孔320之孔壁上保留有該絕緣散熱層32。
於本實施例中，該第一側20a上之絕緣散熱層32係形成有該複數開孔22，以形成如第2C圖所示之絕緣散熱層2b(防焊結構)之態樣。
於其它實施例中，該第一側20a上之防焊結構亦可改為第3D圖所示之防焊結構3b。
另外，於後續應用該半導體封裝載板3時，如第3E圖所示之電子封裝件4’，係於該線路結構2a之第一側20a之外露焊墊212上設置該電子元件40，並形成該封裝層41於該第一側20a上以結合該電子元件40；或者，可於該半導體封裝載板3之第二側20b之外露焊墊212上接置該複數導電元件42。
因此，本實施例之半導體封裝載板3係於該防焊結構3b中增設剛性層33，且以該絕緣散熱層32包覆該剛性層33，故相較於習知技術，該半導體封裝載板3於封裝製程後，該複數導電元件400,42會接觸該絕緣散熱層32，使該電子封裝件4’之熱能可透過該複數導電元件400,42經由該絕緣散熱層32而傳遞至該剛性層33上以增加散熱之效果，因而能有效提升該電子封裝件4’之整體效能與使用壽命。
再者，本實施例之半導體封裝載板3藉由該高剛性的剛性層33，不僅能提升散熱效果，且能增加該半導體封裝載板3之結構強度。
綜上所述，本發明之半導體封裝載板及藉此封裝完成之電子封裝件，係利用高散熱的石墨稀作為絕緣散熱層(或防焊結構)，並利用焊錫球(導電元件)接觸該石墨稀，以快速導熱而使熱能不會積累於該半導體封裝載板上，故本發明之電子封裝件及其半導體封裝載板之散熱速度極快，因而不僅能提升整體電子產品效能，且能應用於需高散熱需求之高功率產品，使電子產品能發揮應有的效能。因此，本發明應用於高密度線路/高傳輸速度設計之高階產品時，可得到更好的產品整體效能及品質可靠性或耐用性。
上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。
2‧‧‧半導體封裝載板
2a‧‧‧線路結構
2b‧‧‧絕緣散熱層
20a‧‧‧第一側
20b‧‧‧第二側
212‧‧‧焊墊
22‧‧‧開孔

Claims (10)

  1. 一種半導體封裝載板，係包括：線路結構，係具有相對之第一側與第二側，其中，該線路結構係包含至少一介電層及結合該介電層之線路層，且該第一側之線路層與該第二側之線路層係具有複數焊墊；以及絕緣散熱層，係設於該線路結構之第一側之全部表面及/或第二側之全部表面上，且形成有複數開孔，以令該複數焊墊外露於該複數開孔，其中，該絕緣散熱層係為石墨烯層。
  2. 如申請專利範圍第1項所述之半導體封裝載板，復包括一為導電材或非導電材之剛性層，其藉由一結合材結合於該線路結構之第二側，該複數開孔並延伸至該剛性層中以露出該線路結構之第二側之該複數焊墊，且在該剛性層上及該複數開孔中之孔壁上均設有該絕緣散熱層，又該複數開孔中露出之該複數焊墊上未設有該絕緣散熱層。
  3. 如申請專利範圍第2項所述之半導體封裝載板，復包括複數導電元件，其結合於該複數開孔中之該複數焊墊上，且該複數導電元件接觸該絕緣散熱層。
  4. 如申請專利範圍第1項所述之半導體封裝載板，復包括複數導電元件，其結合於該線路結構之第一側及/或第二側外露於該複數開孔中之該複數焊墊上，且該複數導電元件接觸該絕緣散熱層。
  5. 一種電子封裝件，係包括：如申請專利範圍第1項所述之半導體封裝載板；複數導電元件，係結合於該線路結構之第一側及/或第二側露出之該複數焊墊上，且該複數導電元件接觸該絕緣散熱層； 電子元件，係覆晶接置於該線路結構之第一側之複數導電元件上；以及封裝層，係設於該半導體封裝載板上，以將該電子元件結合至該半導體封裝載板上。
  6. 如申請專利範圍第5項所述之電子封裝件，復包括一為導電材或非導電材之剛性層，其藉由一結合材結合於該線路結構之第二側，該剛性層並設有複數開孔以露出該線路結構之第二側之該複數焊墊，且在該剛性層上及該複數開孔中之孔壁上均設有該絕緣散熱層，又該複數開孔中露出之該複數焊墊上未設有該絕緣散熱層，以令該複數導電元件結合於該線路結構之第二側之外露之該複數焊墊，並使該複數導電元件接觸該絕緣散熱層。
  7. 一種半導體封裝載板之製法，係包括：提供一具有相對之第一側與第二側之線路結構，其中，該線路結構係包含至少一介電層及結合該介電層之線路層，且該第一側之線路層與該第二側之線路層係具有複數焊墊；形成絕緣散熱層於該線路結構之第一側之全部表面及/或第二側之全部表面上，其中，該絕緣散熱層係為石墨烯層；以及形成複數開孔於該絕緣散熱層上，以令該複數焊墊外露於該複數開孔。
  8. 如申請專利範圍第7項所述之半導體封裝載板之製法，復包括將一為導電材或非導電材之剛性層藉由一結合材結合於該線路結構之第二側上，且於該剛性層上形成複數另一開孔以露出該線路結構之第二側之該複數焊墊，再以該絕緣散熱層包覆該剛性層及其複數另一開孔，之後移除該複數另一開孔中之該複數焊墊上之該絕緣散熱層以形成該複數開孔，並且保留該複數另一開孔中孔壁上之該絕緣散熱層。
  9. 如申請專利範圍第8項所述之半導體封裝載板之製法，其中，該剛性層之該複數另一開孔中之該複數焊墊上係結合有複數導電元件，且該複數導電元件接觸該絕緣散熱層。
  10. 如申請專利範圍第7項所述之半導體封裝載板之製法，其中，該線路結構之第一側及/或第二側外露於該複數開孔中之該複數焊墊上係結合有複數導電元件，且該複數導電元件接觸該絕緣散熱層。
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