TWI834298B - 電子封裝件及其製法 - Google Patents
電子封裝件及其製法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 232
- 239000011247 coating layer Substances 0.000 claims description 34
- 238000005253 cladding Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 description 19
- 239000002184 metal Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 238000000227 grinding Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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Abstract
一種電子封裝件,其製法係於線路部上配置電子元件,且以ABF作為包覆層以包覆該電子元件,並將佈線層設於該包覆層上及將導電通孔形成於該包覆層中,故藉由ABF材作為該包覆層,使該佈線層能良好結合於該包覆層上。
Description
本發明係有關一種半導體封裝製程,尤指一種可提高可靠性之電子封裝件及其製法。
隨著電子產業的蓬勃發展,電子產品也逐漸邁向多功能、高性能的趨勢。同時,目前應用於晶片封裝領域之技術,包含有例如晶圓級封裝(Wafer Level Packaging,簡稱WLP)、晶片尺寸構裝(Chip Scale Package,簡稱CSP)、晶片直接貼附封裝(Direct Chip Attached,簡稱DCA)或多晶片模組封裝(Multi-Chip Module,簡稱MCM)等封裝型態的封裝模組等。
圖1A至圖1E係為習知半導體封裝件1之製法之剖面示意圖。
如圖1A所示,形成一離形層100於一承載件10上。接著,置放複數半導體元件17於該離形層100上,其中,該些半導體元件17係具有相對之作用面17a與非作用面17b,該作用面17a上具有複數電極墊170,且各該半導體元件17係以其作用面17a黏著於該離形層100上。
如圖1B所示,形成一如環氧樹脂(epoxy)之包覆層18於該離形層100上,以包覆該些半導體元件17。
如圖1C所示,藉由該離形層100分離該承載件10與該半導體元件17,使該半導體元件17之作用面17a外露。
如圖1D所示,形成一佈線結構15於該包覆層18與該半導體元件17之作用面17a上,且該佈線結構15係包含至少一介電層150及結合該介電層150之佈線層151,以令該佈線層151電性連接該半導體元件17之電極墊170。接著,形成一防焊層16於該佈線結構15上,且該防焊層15外露該佈線層151之部分表面,以供結合如銲球之導電元件19。
如圖1E所示,沿如圖1D所示之切割路徑L進行切單製程,以獲取複數個半導體封裝件1。
惟,習知半導體封裝件1中,由於該包覆層18採用環氧樹脂,其與如銅材之金屬材之結合力不佳,故於製作該佈線層151前,需先於該包覆層18上製作一層如預浸材(Prepreg,簡稱PP)之介電層150,因而大幅增加該佈線結構15之製作時間與製作材料,導致製作成本難以降低。
再者,習知半導體封裝件1中,由於該包覆層18採用環氧樹脂,若需電性導通該包覆層18上下兩側,需先於該承載件10上電鍍出導電柱,再以該包覆層18包覆該導電柱,之後進行研磨作業以外露出該導電柱之端面,故需進行銅柱製程及研磨作業,因而不僅增加製作時間與製作材料,導致難以降低製作成本,且製作步驟繁瑣,致使生產效率不佳。
又,習知半導體封裝件1中,由於該包覆層18採用環氧樹脂,因而僅能採用單一個體(unit)規格或晶圓級(wafer size)規格進行製作,因而難以提升效益,更無法降低生產成本,致使不利於量產。
因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。
鑑於上述習知技術之種種缺失,本發明係提供一種電子封裝件,係包括:線路部,係具有至少一絕緣層及結合該絕緣層之線路層,其中,該絕緣層係定義有相對之第一表面與第二表面,以令該線路層外露於該絕緣層之第一表面;電子元件,係設於該線路部之絕緣層之第一表面上且電性連接該線路層;包覆層,係設於該線路部之絕緣層之第一表面上以包覆該電子元件,其中,該包覆層係為味之素增層膜;以及佈線層,係設於該包覆層上,其中,該佈線層於該包覆層中形成有至少一電性連接該線路層之導電通孔。
本發明亦提供一種電子封裝件之製法,係包括:提供一線路部,其具有至少一絕緣層及結合該絕緣層之線路層,其中,該絕緣層係定義有相對之第一表面與第二表面,以令該線路層外露於該絕緣層之第一表面;將電子元件設於該線路部之絕緣層之第一表面上,且該電子元件電性連接該線路層;形成包覆層於該線路部之絕緣層之第一表面上,以令該包覆層包覆該電子元件,其中,該包覆層係為味之素增層膜;以及形成佈線層於該包覆層上,且該佈線層係延伸至該包覆層中以形成至少一電性連接該線路層之導電通孔。
前述之電子封裝件及其製法中,該電子元件係為被動元件。
前述之電子封裝件及其製法中,該電子元件係藉由複數導電凸塊電性連接該線路層。
前述之電子封裝件及其製法中,形成該包覆層之材質不同於形成該絕緣層之材質。
前述之電子封裝件及其製法中,復包括形成另一佈線層於該絕緣層之第二表面上,且於該絕緣層中形成有至少一電性連接該線路層與該另一佈線層之導電盲孔。
由上可知,本發明之電子封裝件及其製法中,主要藉由ABF材作為該包覆層,使該佈線層能良好結合於該包覆層上,故相較於習知技術,本發明之製法可直接於該包覆層上製作佈線層,而無需形成一用以結合該佈線層之介電層,因而能有效節省製作時間與製作材料,以有效降低製作成本。
再者,本發明之製法可直接雷射加工ABF材,以形成導電通孔,故相較於習知技術,本發明之製法無需進行銅柱製程及研磨作業,因而不僅能節省製作時間與製作材料以降低製作成本,且能大幅減少製作步驟,以利於提升生產效率。
又,本發明之製法藉由ABF材作為該包覆層,因而可採用整版面(panel)規格,故相較於習知技術,本發明能大幅提升效益,並降低生產成本,以利於量產。
1:半導體封裝件
100:離形層
15:佈線結構
150:介電層
151,24,25:佈線層
16,26:防焊層
17:半導體元件
17a:作用面
17b:非作用面
170:電極墊
18,28:包覆層
19:導電元件
2,3:電子封裝件
2a,3a:線路部
21:線路層
22:第一金屬層
23:絕緣層
23a:第一表面
23b:第二表面
240,310:導電盲孔
250:導電通孔
260:開孔
27:電子元件
270:導電凸塊
28a:第一側
28b:第二側
280:第二金屬層
9,10:承載件
9a:金屬表面
L:切割路徑
圖1A至圖1E係為習知半導體封裝件之製法之剖視示意圖。
圖2A至圖2F係為本發明之電子封裝件之製法之第一實施例之剖視示意圖。
圖3A至圖3B係為本發明之電子封裝件之製法之第二實施例之剖面示意圖。
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」、及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。
圖2A至圖2F係為本發明之電子封裝件2之製法之第一實施例之剖面示意圖。
如圖2A所示,於一承載件9上形成一線路層21,再於該承載件9上形成一絕緣層23,以令該絕緣層23覆蓋該線路層21,其中,該線路層21與該絕緣層23係作為線路部2a。
於本實施例中,該承載件9之相對兩側係具有金屬表面9a,如銅箔基板形式,以於各該金屬表面9a上分別製作該線路部2a。
再者,該絕緣層23係為介電層,如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它介電材。
又,該絕緣層23係定義有相對之第一表面23a與第二表面23b,且該絕緣層23以其第一表面23a結合該承載件9之金屬表面9a。例如,該絕緣層23係以壓合方式形成於該承載件9上,故該絕緣層23之第二表面23b上可配置第一金屬層22,以利於將該絕緣層23壓合於該承載件9上,且於該絕緣層23結合該銅箔後,該第一金屬層22係外露。
如圖2B所示,藉由剝離方式,使該線路部2a及其上之第一金屬層22自該承載件9上分離,其中,該線路層21係外露於該絕緣層23之第一表面23a。
於本實施例中,該銅箔需採用蝕刻方式移除,故將略蝕該線路層21之部分材質,使該線路層21凹入該絕緣層23之第一表面23a,換言之,該線路層21之表面將低於該絕緣層23之第一表面23a。
如圖2C所示,將至少一電子元件27設於該線路部2a之絕緣層23之第一表面23a上,以令該電子元件27電性連接該線路層21。
於本實施例中,該電子元件27係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。於一實施態樣中,該電子元件27係為被動元件,其藉由複數如焊錫材料之導電凸塊270電性連接該線路層21。應可理解地,若該電子元件27為半導體晶片,其可採用覆晶方式、打線方式或其它封裝方式電性連接該線路層21。
如圖2D所示,形成一包覆層28於該線路部2a之絕緣層23之第一表面23a上,以令該包覆層28包覆該電子元件27,其中,該包覆層28係為味之素增層膜(Ajinomoto Build-up Film,簡稱ABF),其與如銅材之金屬材之結合性極佳。
於本實施例中,該包覆層28係定義有相對之第一側28a與第二側28b,且該包覆層28以其第一側28a結合該絕緣層23之第一表面23a。例如,該包覆層28係以壓合方式形成於該線路部2a上,故該包覆層28之第二側28b上可配置第二金屬層280,以利於將該包覆層28壓合於該線路部2a上,且於該包覆層28結合該線路部2a後,該第二金屬層280係外露。
再者,形成該包覆層28之材質不同於形成該絕緣層23之材質。或者,該絕緣層23亦可採用ABF材,使該包覆層28與該絕緣層23之材質相同。
如圖2E所示,於該包覆層28上形成佈線層25,且該佈線層25於該包覆層28中形成有複數導電通孔250,以令該導電通孔250連通該包覆層28之第一側28a與第二側28b,使該佈線層25藉由該導電通孔250電性連接該線路層21。
於本實施例中,該佈線層25係採用線路重佈層(redistribution layer,簡稱RDL)之製程製作,其材質係為銅。
再者,該導電通孔250之製程係先於該包覆層28之第二側28b上以雷射方式燒灼該第二金屬層280與該包覆層28,以形成一外露該線路層21之穿孔,再配合該佈線層25所採用之RDL製程,以將銅材形成於該穿孔中。應可
理解地,有關封裝導通孔(Through Molding Via,簡稱TMV)之製作方式繁多,並不限於上述。
另一方面,該線路部2a上亦可利用第一金屬層22進行RDL佈線製程,以於該絕緣層23之第二表面23b形成另一佈線層24,且該佈線層24於該絕緣層23中形成有複數電性連接該線路層21之導電盲孔240。應可理解地,於其它實施例中,亦可移除該第一金屬層22,以於該絕緣層23之第二表面23b形成外露該線路層21之開孔,供外接如電路板、封裝模組或其它之電子裝置。
如圖2F所示,於該絕緣層23之第二表面23b與該包覆層28之第二側28b上分別形成一具有複數開孔260之防焊層26,以令該些佈線層24,25之部分表面外露於該開孔260,供外接如電路板、封裝模組或其它之電子裝置。
因此,本發明之製法主要藉由ABF材作為該包覆層28,使該佈線層25能良好結合於該包覆層28上,故相較於習知技術,本發明之製法可直接於該包覆層28上製作佈線層25,而無需形成一用以結合該佈線層25之介電層,因而能有效節省製作時間與製作材料,以有效降低製作成本。
再者,本發明之製法可直接雷射加工ABF材,以形成該導電通孔250所需之穿孔,故相較於習知技術,本發明之製法無需進行銅柱製程及研磨作業,因而不僅能節省製作時間與製作材料以降低製作成本,且能大幅減少製作步驟,以利於提升生產效率。
又,本發明之製法藉由ABF材作為該包覆層28,因而可採用整版面(panel)規格,故相較於習知技術之僅能採用單一個體(unit)規格或晶圓級(wafer size)規格,本發明能大幅提升效益,並降低生產成本,以利於量產。
圖3A至圖3B係為本發明之電子封裝件3之製法之第二實施例之剖面示意圖。本實施例與第一實施例之差異在於線路部3a之配線層數,其它製程大致相同,故以下不再贅述相同處。
如圖3A所示,於一承載件9上形成複數絕緣層23及複數結合該絕緣層23之線路層21,以令該複數絕緣層23與該複數線路層21作為線路部3a。
於本實施例中,該複數線路層21之間係藉由導電盲孔310相互電性導通。
如圖3B所示,依據圖2B至圖2F所示之製程,以獲取另一配線規格之電子封裝件3。
於本實施例中,該電子封裝件3係配置四層配線(兩層線路層21與兩層佈線層24,25),而第一實施例之電子封裝件2係配置三層配線(單一層線路層21與兩層佈線層24,25)。
本發明亦提供一種電子封裝件2,係包括:一線路部2a,3a、至少一電子元件27、包覆層28以及佈線層25。
所述之線路部2a,3a係具有至少一絕緣層23及結合該絕緣層23之線路層21,其中,該絕緣層23係定義有相對之第一表面23a與第二表面23b,以令該線路層21外露於該絕緣層23之第一表面23a。
所述之電子元件27係設於該線路部2a,3a之絕緣層23之第一表面23a上且電性連接該線路層21。
所述之包覆層28係設於該線路部2a,3a之絕緣層23之第一表面23a上以包覆該電子元件27,其中,該包覆層28係為味之素增層膜。
所述之佈線層25係設於該包覆層28上,其中,該佈線層25於該包覆層28中形成有至少一電性連接該線路層21之導電通孔250。
於一實施例中,該電子元件27係為被動元件。
於一實施例中,該電子元件27係藉由複數導電凸塊270電性連接該線路層21。
於一實施例中,形成該包覆層28之材質不同於形成該絕緣層23之材質。
於一實施例中,所述之電子封裝件2,3復包括形成於該絕緣層23之第二表面23b上之另一佈線層24,且該另一佈線層24於該絕緣層23中形成有至少一電性連接該線路層21之導電盲孔240。
綜上所述,本發明之電子封裝件及其製法,主要藉由ABF材作為該包覆層,使該佈線層能良好結合於該包覆層上,故本發明之製法可直接於該包覆層上製作佈線層,而無需形成一用以結合該佈線層之介電層,因而能有效節省製作時間與製作材料,以有效降低製作成本。
再者,本發明之製法可直接雷射加工ABF材,以形成導電通孔,故本發明之製法無需進行銅柱製程及研磨作業,因而不僅能節省製作時間與製作材料以降低製作成本,且能大幅減少製作步驟,以利於提升生產效率。
又,本發明之製法藉由ABF材作為該包覆層,因而可採用整版面(panel)規格,故本發明能大幅提升效益,並降低生產成本,以利於量產。
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對
上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。
2:電子封裝件
2a:線路部
21:線路層
23:絕緣層
23a:第一表面
23b:第二表面
24,25:佈線層
250:導電通孔
26:防焊層
260:開孔
27:電子元件
270:導電凸塊
28:包覆層
Claims (10)
- 一種電子封裝件,係包括:線路部,係具有至少一絕緣層及結合該絕緣層之線路層,其中,該絕緣層係定義有相對之第一表面與第二表面,以令該線路層外露於該絕緣層之第一表面,且該線路層之表面低於該絕緣層之第一表面;電子元件,係設於該線路部之絕緣層之第一表面上且電性連接該線路層;包覆層,係設於該線路部之絕緣層之第一表面上以包覆該電子元件,其中,該包覆層係為味之素增層膜;以及佈線層,係設於該包覆層上,其中,該佈線層於該包覆層中形成有至少一電性連接該線路層之導電通孔。
- 如請求項1所述之電子封裝件,其中,該電子元件係為被動元件。
- 如請求項1所述之電子封裝件,其中,該電子元件係藉由複數導電凸塊電性連接該線路層。
- 如請求項1所述之電子封裝件,其中,形成該包覆層之材質不同於形成該絕緣層之材質。
- 如請求項1所述之電子封裝件,復包括形成於該絕緣層之第二表面上之另一佈線層,且該另一佈線層於該絕緣層中形成有至少一電性連接該線路層之導電盲孔。
- 一種電子封裝件之製法,係包括: 提供一線路部,其具有至少一絕緣層及結合該絕緣層之線路層,其中,該絕緣層係定義有相對之第一表面與第二表面,以令該線路層外露於該絕緣層之第一表面,且該線路層之表面低於該絕緣層之第一表面;將電子元件設於該線路部之絕緣層之第一表面上,且該電子元件電性連接該線路層;形成包覆層於該線路部之絕緣層之第一表面上,以令該包覆層包覆該電子元件,其中,該包覆層係為味之素增層膜;以及形成佈線層於該包覆層上,且該佈線層係延伸至該包覆層中以形成至少一電性連接該線路層之導電通孔。
- 如請求項6所述之電子封裝件之製法,其中,該電子元件係為被動元件。
- 如請求項6所述之電子封裝件之製法,其中,該電子元件係藉由複數導電凸塊電性連接該線路層。
- 如請求項6所述之電子封裝件之製法,其中,形成該包覆層之材質不同於形成該絕緣層之材質。
- 如請求項6所述之電子封裝件之製法,復包括形成另一佈線層於該絕緣層之第二表面上,且於該絕緣層中形成有至少一電性連接該線路層與該另一佈線層之導電盲孔。
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