TWI693141B - 奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置 - Google Patents

奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置 Download PDF

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TWI693141B
TWI693141B TW106122628A TW106122628A TWI693141B TW I693141 B TWI693141 B TW I693141B TW 106122628 A TW106122628 A TW 106122628A TW 106122628 A TW106122628 A TW 106122628A TW I693141 B TWI693141 B TW I693141B
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transfer portion
substrate
pattern
mold
transfer
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權相民
具滋鵬
丘璜燮
金鉉濟
鄭熙錫
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南韓商吉佳藍科技股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/56Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/60Releasing, lubricating or separating agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/161Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0888Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
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Abstract

本發明涉及一種奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置。本發明的奈米壓印用複製模的特徵在於,包括:基底,其由塑膠膜形成;以及轉印部,其形成於該基底,其中,該轉印部由樹脂形成。

Description

奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置
本發明涉及一種奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置。
奈米壓印製程作為一種替代藉由將光刻膠(photoresist)曝光(expose)及顯影(develop)而在基板(substrate)上部形成圖案(pattern)的光刻製程(photo lithography process)的技術,是一種藉由將形成有圖案的衝壓模具轉印(stamping)至基板上部的樹脂,在基板上部形成圖案的製程。
此時,奈米壓印製程所使用的衝壓模具的圖案藉由轉印至複製模的圖案形成。
通常,如圖1所示,衝壓模具2通過附著了形成有圖案PT的複製模1的卷對卷(roll to roll)裝備的卷5時,複製模1的圖案PT被轉印至衝壓模具2,從而在衝壓模具2上形成圖案PT,如圖2所示,圖案PT藉由依次被轉印至複製模1、衝壓模具2及基板3而形成。
然而,傳統的複製模1由鎳(Ni)、銅(Cu)等金屬材質形成,因而存在圖案精度低、製造製程複雜、製造單價高的問題。
上述作為背景技術而說明的事項僅用於增進對本發明背景的理解,不能被理解為相當於本領域的一般的技術人員所周知的現有技術。
現有技術文獻
專利文獻
專利文獻0001:KR10-2012-0127731(2012.11.23)
本發明的目的在於,提供一種由樹脂形成,因而圖案精度高、製造製程簡單、製造單價低的奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置。
為達成這種目的,本發明的奈米壓印用複製模的特徵在於,包括:基底,其由塑膠膜形成;以及轉印部,其形成於該基底,其中,該轉印部由樹脂形成。
該轉印部的特徵在於,形成有凹凸狀的圖案。
為達成這種目的,本發明的奈米壓印用複製模還可以包括:導膜,其形成於該基底,且形成有中孔,以使該轉印部露出。
為達成這種目的,本發明的奈米壓印用複製模包括:基底,其由塑膠膜形成;轉印部,其形成於該基底;以及導膜,其形成於該基底,且形成有對應於該轉印部的形狀的中孔,以使該轉印部露出。
該轉印部的特徵在於,藉由在形成於該導膜的中孔中填充樹脂形成。
較佳為該基底的一面形成有具有彈性的墊層。
為達成這種目的,本發明的奈米壓印用複製模製造裝置包括: 填充部,其藉由在形成於導膜的中孔中填充樹脂而形成轉印部;加壓部,在其一側附著有母模,藉由升降該母模而將該母模的圖案轉印至該轉印部;以及照射部,其向該加壓部方向照射光。
為達成這種目的,本發明的奈米壓印用複製模製造方法包括:藉由在形成於導膜的中孔中填充樹脂而形成轉印部的填充步驟;將母模移動至該轉印部,並藉由對該母模加壓而形成圖案的圖案形成步驟;藉由向該轉印部照射光而固化該轉印部的固化步驟;以及去除該導膜的去除步驟。
根據本發明,可以實現如下多種效果。
第一,具有改善圖案精度的優點。
第二,具有製造製程簡單的優點。
第三,具有製造單價低的優點。
10‧‧‧基底
20‧‧‧轉印部
30‧‧‧導膜
40‧‧‧墊層
圖1是卷對卷裝備的結構圖。
圖2是複製模、衝壓模具、基板的圖案形成順序圖。
圖3是本發明的奈米壓印用複製模的結構圖。
圖4是對本發明奈米壓印用複製模的另一實施例的結構圖。
圖5是對本發明奈米壓印用複製模的異物去除的結構圖。
圖6是示出對本發明奈米壓印用複製模的異物去除的平面圖的圖。
本發明的目的、特定優點及新特徵將在下面結合圖式所描述的詳細說明及實施例中變得更容易理解。值得注意的是,在本說明書中對各圖的構成要素標記參考編號時,就相同的構成要素而言,即使在不同的圖中標示,也儘量使其具有相同的編號。此外,儘管第一、第二等術語可以用於說明多種構成要素,但該構成要素不限於該術語。該術語僅用作區分一個構成要素與另一個構成要素的目的。此外,在說明本發明的過程中,當判斷對相關公知技術的具體說明反而多餘地使本發明的主旨不清楚時,省略其詳細說明。
如圖3所示,本發明的奈米壓印用複製模包括:基底10;以及轉印部20:其形成於基底10。
基底10發揮支撐轉印部20的功能,其可以由基板(substrate)、膜(film)等形成,而膜(film)中又尤其可以使用塑膠膜,本發明人將作為塑膠膜的一種的PET膜(Polyethylene phthalate film)用作基底10。
轉印部20由樹脂(resin)形成,為後續製程,較佳為由藉由紫外線(ultraviolet,UV)、電子束(electron beam,EB)等光(light)固化的光固化樹脂(light curable resin)形成。
轉印部20可以形成為圓形,藉由由母模轉印(stamping),在轉印部20上形成與形成於母模的圖案(pattern)對應的圖案。亦即,藉由轉印(stamping)形成於母模的一面的凹凸狀的圖案在轉印部20上形成與上述母模的圖案對應的凹凸狀的圖案,換言之,在複製模上形成與母模的圖案相反的圖案。
例如,當形成於母模的凹狀圖案被轉印至複製模時,在複製 模的轉印部20上形成與凹狀圖案相反的凸狀圖案;形成於複製模的轉印部20上的凸狀圖案被轉印至衝壓模具,在衝壓模具上形成凹狀圖案;形成於衝壓模具的凹狀圖案被轉印至基板,在基板上形成凸狀圖案。
複製模的圖案被轉印至衝壓模具,而衝壓模具的圖案被轉印至基板,因而形成於複製模的圖案與形成於基板的圖案相同,而與形成於衝壓模具的圖案相反。
一方面,母模可以是矽晶片(Si wafer)、石英(quartz)等。
如此,複製模由樹脂形成,而非由鎳、銅等金屬形成,因而具有改善圖案精度的優點。
此外,傳統的複製模藉由對鎳、銅等金屬實施電鍍的方式製造,而本發明的複製模則藉由轉印形成,因而具有簡化製造製程、改善生產速度、降低製造單價的優點。
如圖4至圖6所示,本發明的奈米壓印用複製模包括:基底10、轉印部20、導膜30、墊層40。
將母模轉印至複製模時,複製模的轉印部20的外周面有可能會被暈印而形成異物P。亦即,與轉印前的轉印部20的外周面相比,轉印後的轉印部20的外周面被擴散而暈印,暈印部分固化後形成異物P。
形成異物P的複製模被轉印至衝壓模具所存在的問題是,衝壓模具的圖案受損而發生缺陷。
因此,為防止衝壓模具的圖案受損,防止形成或去除複製模的轉印部20的異物P是極為重要的因素。
為去除形成於轉印部20的異物P,本發明引入了導膜30。 亦即,藉由使形成有與轉印部20對應的中孔的導膜30位於基底10,防止轉印部20的外周面上形成異物P。
下面對導膜30進行詳細說明。
如圖5及圖6所示,導膜30形成有對應於轉印部20的形狀的中孔。當轉印部20為圓形時,導膜30的中孔也同樣形成為圓形以與之對應。
因此,轉印部20通過中孔向外部露出,當將母模轉印至複製模時,異物P形成於導膜30上,而不是形成於轉印部20的外周面。
之後,去除導膜30即可輕鬆地一併去除形成於導膜30的異物P。
如此,藉由利用導膜30去除異物P,可以防止將複製模轉印至衝壓模具時轉印部20上形成異物P,從而可以防止衝壓模具圖案受損,進而防止發生缺陷。
一方面,為了將複製模轉印至衝壓模具,使複製模附著於卷對卷裝備的卷或壓合裝備的基板,而如果複製模所附著的卷或基板的面不均勻或存在異物等,由樹脂材質形成的轉印部20會通過厚度薄的基底10受到影響,因而存在轉印至衝壓模具時圖案受損而引發缺陷的問題。
本發明中,藉由在基底10上形成墊層40防止轉印時複製模的轉印部20受影響。亦即,藉由在與形成有轉印部20的基底10的一面相反的另一面形成具有彈性的墊層40解決了上述問題。
較佳為墊層40形成為比基底10薄、比導膜30厚,墊層40的一面可以附著有未形成中孔的導膜。
此外,墊層40可以是矽(Si),且可以塗覆於基底10而形成。
根據本發明的奈米壓印用複製模,即使複製模所附著的卷或基板的面不均勻或存在異物等,由於具有彈性的墊層40予以緩和傳自卷或基板的不均勻的壓力,因而可以防止不均勻的壓力通過基底10傳達至轉印部20而影響轉印部20。
下面對本發明的奈米壓印用複製模製造裝置進行說明
本發明的奈米壓印用複製模製造裝置包括:填充部、加壓部、照射部。
填充部在基底10中填充轉印部20,若基底10上存在形成有中孔的導膜30,則在導膜30的中孔中填充轉印部20。
這種填充部可藉由旋塗(spin coating)方式填充轉印部20,其可以包括:塗覆轉印部20的噴嘴及旋轉轉印部20的電動機。
加壓部包括可上下工作的缸體(cylinder)、直線電動機(linear motor)等,且其一面附著有母模。母模與加壓部連動升降,因而母模的圖案被轉印至轉印部20,從而形成圖案。
照射部向加壓部方向照射紫外線、電子束等光。亦即,藉由向位於加壓部的轉印部20照射紫外線、電子束等光而固化轉印部20。
下面簡單說明藉由上述奈米壓印用複製模製造裝置製造複製模的過程。
本發明的奈米壓印用複製模製造方法包括:在形成於導膜30的中孔中填充轉印部20的填充步驟;藉由向轉印部20加壓母模而形成 圖案的圖案形成步驟;藉由向轉印部20照射紫外線、電子束等光而固化轉印部的固化步驟;以及去除導膜30的去除步驟。
填充步驟包括:在導膜30上塗覆轉印部20的塗覆步驟;旋轉轉印部20的旋轉步驟;以及乾燥轉印部20的烘乾步驟。
一方面,固化步驟可以始於圖案形成步驟中向轉印部20加壓母模之前、加壓母模的過程中、或加壓母模之後中的任一時間點。
儘管上面藉由具體實施例詳細說明了本發明,但僅僅是為具體說明本發明而進行的描述,並不限於本發明所涉及的說明,顯然,本領域的技術人員可以在本發明的技術思想範圍內對其實施變形或改良。
本發明的單純變形及變更均屬於本發明的領域,因而本發明的具體保護範圍將由所附申請專利範圍明確界定。

Claims (6)

  1. 一種奈米壓印用複製模,包括:基底,其由塑膠膜形成;轉印部,其形成於該基底;以及導膜,其形成於該基底,且形成有中孔,以使該轉印部露出,其中,該轉印部由樹脂形成,該轉印部形成有凹凸狀的圖案。
  2. 一種奈米壓印用複製模,包括:基底,其由塑膠膜形成;轉印部,其形成於該基底,且形成有凹凸狀的圖案;以及導膜,其形成於該基底,且形成有對應於該轉印部的形狀的中孔,以使該轉印部露出。
  3. 如申請專利範圍第2項之奈米壓印用複製模,其中,該轉印部藉由在形成於該導膜的中孔中填充樹脂形成。
  4. 如申請專利範圍第1至3項中任一項之奈米壓印用複製模,其中,該基底的一面形成有具有彈性的墊層。
  5. 一種奈米壓印用複製模製造裝置,包括:填充部,其藉由在形成於導膜的中孔中填充樹脂而形成轉印部;加壓部,在其一側附著有母模,藉由升降該母模而將該母模的圖案轉印至位於該導膜的中孔中的該轉印部;以及照射部,其向該加壓部方向照射光。
  6. 一種奈米壓印用複製模的製造方法,包括:藉由在形成於導膜的中孔中填充樹脂而形成轉印部的填充步驟; 將母模移動至位於該導膜的中孔中的該轉印部,並藉由對該母模加壓而形成圖案的圖案形成步驟;藉由向該轉印部照射光而固化該轉印部的固化步驟;以及在該圖案形成步驟之後去除該導膜的去除步驟。
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