TWI671844B - 拾取裝置以及拾取方法 - Google Patents
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Abstract
本發明揭示一種可更適當地拾取半導體晶片的拾取裝置以及拾取方法。拾取貼附於片材110的表面的半導體晶片100的拾取裝置10包括:載台12,一部分或全部包含能夠供具有電離作用的去靜電用電磁波透過的材料,且吸附保持所述片材110的背面;頂起銷26,使所述半導體晶片100自所述載台12的背面側頂起;以及去靜電機構20,使所述去靜電用電磁波自所述載台12的背面側透過所述片材110而照射至所述半導體晶片100的背面,將所述半導體晶片100與所述片材110之間產生的電荷去靜電。
Description
本申請案是有關於一種拾取(pick up)貼附於片材的表面的半導體晶片的拾取裝置以及拾取方法。
接合(bonding)前的半導體晶片整齊排列貼附於切割片(dicing sheet)等片材的表面。在將半導體晶片接合於電路基板等時,必須自該片材拾取半導體晶片。拾取半導體晶片時,使對象的半導體晶片自片材的背面側頂起,並且利用夾頭(collet)等吸附保持被頂起的半導體晶片。
此處,在自貼附有半導體晶片的片材剝離並拾取半導體晶片時,有時半導體晶片與片材之間會產生剝離帶電。尤其在對半導體晶片的背面塗佈包含樹脂的黏接劑的情況下,容易於與同樣地包含樹脂的片材之間產生剝離帶電。因半導體晶片的背面以及片材的表面帶電,而會出現半導體晶片飛散或靜電擊穿的情況。
因此,以前,提出設置去靜電裝置以使半導體晶片周邊的電荷中和。例如,專利文獻1中揭示了一種半導體晶圓夾盤裝置,其包括:藉由靜電力吸附半導體晶圓的靜電夾盤,以及將解除了靜電夾盤的靜電力後仍殘留的電荷中和而去靜電的離子化氣體產生單元。該專利文獻1中,離子化氣體產生單元具有自側方
照射晶圓而將晶圓周圍的惰性氣體離子化的紫外線(Ultraviolet,UV)光照射裝置。
另外,專利文獻2中揭示了一種電子零件封裝裝置,其具備將剝離部位所帶的電荷加以去除的去靜電單元,該剝離部位是自保持著電子零件的膠帶剝離覆蓋該膠帶的上表面的頂部膠帶的部位。該專利文獻2中,去靜電單元是配置於頂部膠帶的上方而對剝離部位噴射經離子化的空氣的去靜電器。另外,專利文獻2中雖未明確記述,但推斷經離子化的空氣是利用電暈(corona)放電而生成。
[現有技術文獻]
[專利文獻]
[專利文獻1]日本專利第3163973號公報
[專利文獻2]日本專利第4458193號公報
藉由使用此種去靜電裝置,可一定程度地減少半導體晶片周邊的電荷。然而,大部分現有的去靜電裝置設置於半導體晶片的上側或側方。因此,現有技術中,無法有效率地進行半導體晶片的背面,亦即片材與半導體晶片的背面的接合部位,的去靜電。結果是,半導體晶片有時會因靜電力而飛散或發生靜電擊穿。
另外,為了去靜電至半導體晶片的背面,亦考慮將由電暈放電生成的離子化空氣吹送至半導體晶片的背面。然而,該情
況下,會因吹送而引起半導體晶片飛散的其他問題。
因此,本申請案中揭示了一種可更適當地拾取半導體晶片的拾取裝置以及拾取方法。
本申請案中揭示的拾取裝置是拾取貼附於片材的表面的半導體晶片的拾取裝置,且所述拾取裝置包括:載台,一部分或全部包含能夠供具有電離作用的去靜電用電磁波透過的材料,且吸附保持所述片材的背面;頂起銷,使所述半導體晶片自所述載台的背面側頂起;以及去靜電機構,使所述去靜電用電磁波自所述載台的背面側透過所述片材而照射至所述半導體晶片的背面,將所述半導體晶片與所述片材之間產生的電荷去靜電。
藉由設為所述構成,可無風地將半導體晶片的背面周邊去靜電,從而可有效地防止靜電力或去靜電用風所引起的半導體晶片的飛散、靜電力所引起的半導體晶片的靜電擊穿等。而且,結果是,可更適當地拾取半導體晶片。
拾取裝置可進而包括抽吸筒,所述抽吸筒覆蓋所述頂起銷的周圍,周面形成著供所述去靜電用電磁波通過的照射孔,所述去靜電機構具有經由所述照射孔將所述去靜電用電磁波照射至所述半導體晶片的光源。
藉由經由照射孔將去靜電用電磁波照射至半導體晶片,而無須於抽吸筒的內部配置光源,從而可簡化構成。
另外,所述去靜電機構亦可照射具有3eV~15keV的
範圍的光子能量的去靜電用電磁波。
藉由設為所述構成,可一方面抑制對人體等的不良影響,一方面進行光去靜電。
另外,所述去靜電機構照射具有紫外線區域的光子能量的所述去靜電用電磁波,所述載台亦可包含石英、氟化鈣、或氟化鎂。另外,所述去靜電機構照射具有X射線區域的光子能量的所述去靜電用電磁波,所述載台的一部分或全部亦可包含鈹、金剛石。另外,所述去靜電機構照射具有X射線區域的光子能量的所述去靜電用電磁波,所述載台的一部分或全部亦可包含藉由厚度控制對所述去靜電用電磁波的透過性的金屬材料或非金屬材料。
藉由設為所述構成,去靜電用電磁波可透過載台而到達半導體晶片。
本申請案揭示的拾取方法是拾取貼附於片材的表面的半導體晶片的拾取方法,且所述拾取方法包括下述步驟:利用包含能夠供具有電離作用的去靜電用電磁波透過的材料的載台來吸附保持所述片材的步驟;利用頂起銷使所述半導體晶片自所述載台的背面側頂起,而自所述片材剝離所述半導體晶片的至少一部分的步驟;以及與所述頂起步驟並行地或在所述頂起步驟後立即地,使所述去靜電用電磁波自所述載台的背面側透過所述片材而照射至所述半導體晶片的背面,將所述半導體晶片與所述片材之間產生的電荷去靜電的步驟。
藉由設為所述構成,可無風地將半導體晶片的背面周邊去靜電,從而可有效地防止靜電力或去靜電用風所引起的半導體晶片的飛散、靜電力所引起的半導體晶片的靜電擊穿等。而且,結果是,更適當地拾取半導體晶片。
根據本申請案中揭示的拾取裝置以及拾取方法,可無風地將半導體晶片的背面周邊去靜電,從而可有效地防止靜電力或去靜電用風所引起的半導體晶片的飛散、靜電力所引起的半導體晶片的靜電擊穿等。而且,結果是,可更適當地拾取半導體晶片。
10‧‧‧拾取裝置
12‧‧‧載台
14‧‧‧抽吸筒
16‧‧‧頂起機構
18‧‧‧夾頭
20‧‧‧去靜電機構
22‧‧‧抽吸孔
24‧‧‧頂起孔
26‧‧‧頂起銷
28‧‧‧銷保持具
30‧‧‧導引孔
32‧‧‧前端部
34‧‧‧貫通孔
40‧‧‧光源
42‧‧‧去靜電用電磁波/電磁波
46‧‧‧照射孔
48‧‧‧封閉構件
100‧‧‧半導體晶片
102‧‧‧黏接膜
110‧‧‧片材
A‧‧‧區域
圖1是表示拾取裝置的構成的圖。
圖2是圖1的區域A的放大圖。
圖3(a)至圖3(c)是表示拾取的情況的概念圖。
以下,參照圖式對拾取裝置10進行說明。圖1是表示拾取裝置10的構成的圖。而且,圖2是圖1的區域A的放大圖。拾取裝置10包括:抽吸載台12,對貼附著半導體晶片100的片材110進行吸附保持;頂起機構16,於規定的時機使抽吸載台12上的任意的半導體晶片100頂起;夾頭18,對半導體晶片100進行抽吸保持並搬送;以及去靜電機構20,使半導體晶片100的周圍產生離子對而去靜電。
片材110是黏著保持半導體晶片100的塑膠(plastic)製片,一般而言被稱作切割片或晶圓片。片材110的材料只要能夠供具有電離作用的去靜電用電磁波,例如紫外線或軟X射線透過,而不作限定,例如,片材110包含氯乙烯樹脂等。在片材110的表面上,有多個半導體晶片100整齊排列而貼附著。
半導體晶片100在底面形成著多個凸塊(未圖示)。另外,以覆蓋該些多個凸塊的方式在半導體晶片100的底面貼附非導電性的黏接膜102。該黏接膜102例如被稱作晶粒黏膜(die attach film,DAF)或晶圓接合塗層(wafer bonding coating,WBC)。
抽吸載台12是形成著多個抽吸孔22以及一個以上的頂起孔24的大致平板狀構件。抽吸載台12中包含能夠供去靜電用電磁波即紫外線或軟X射線透過的材質,例如石英或氟化鈣、氟化鎂等。
在抽吸載台12的背面,大致圓筒形的抽吸筒14被密接地配置著。抽吸筒14,上端為開口的圓筒構件,下端則連結於抽吸泵(未圖示)。片材110經由該抽吸筒14及抽吸孔22而抽吸保持。頂起孔24是容許後述的頂起銷26通過的孔。在拾取半導體晶片100時,以拾取對象的半導體晶片100位於該頂起孔24的正上方的方式調整片材110的位置。換言之,設置著該頂起孔24的位置是拾取半導體晶片100的拾取位置。
在抽吸筒14的內部設置著構成頂起機構16的頂起銷26。頂起銷26是藉由使半導體晶片100向上方頂起,而將半導體
晶片100的至少一部分自片材110剝離的銷。頂起銷26配置成與頂起孔24同軸,拾取時,自上起依序上下排列著夾頭18、半導體晶片100、頂起孔24、頂起銷26。
在抽吸筒14的內部亦設置著保持該頂起銷26的銷保持具28。銷保持具28中形成著供頂起銷26插通且對頂起銷26的升降進行導引的導引孔30。而且,頂起銷26藉由未圖示的升降機構能夠沿著該導引孔30升降。另外,作為升降機構,可使用柱塞(plunger)或凸輪(cam)機構等。
另外,此處將頂起銷26設為一根,但頂起銷26亦可為多個。亦即,在剝離大型的半導體晶片100等的情況下等,使水平方向上排列的頂起銷26錯開時機或上升量地依序頂起。而且,頂起銷26亦能夠在水平方向上移動,可適當變更半導體晶片100的頂起位置。
夾頭18在拾取位置拾取並吸附保持半導體晶片100,且向下一作業位置,例如調整晶片的斜度等的定位位置等搬送。夾頭18隔著半導體晶片100設置於頂起銷26的相反側。該夾頭18是具有保持半導體晶片100的前端部32及在前端部32開口的貫通孔34的筒狀構件。貫通孔34中連接著未圖示的真空源。另外,夾頭18藉由未圖示的移動機構可於上下方向以及水平方向上移動。另外,作為移動機構,例如可使用具備馬達及導軌的機構等。半導體晶片100在藉由頂起銷26頂起而自片材110剝離後,由該夾頭18抽吸並保持。夾頭18若對半導體晶片進行抽吸保持,則
上升並移動,從而搬送半導體晶片。
去靜電機構20具備配置於抽吸筒14的側方的光源40。光源40將具有電離作用的電磁波42(以下稱作「去靜電用電磁波42」),例如包含紫外線區域或X射線區域的光子能量3eV~15keV的電磁波,向半導體晶片100的背面(與片材110的接觸面)放射。另外,具體而言,光子能量的值為1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20(單位都是“eV”),或亦可在這些數值的任兩者之間的範圍內。再者,在使用紫外線的情況下,理想的是使用波長10nm~200nm(光子能量6eV~123eV)的真空紫外線(遠紫外線)。另外,作為X射線,理想的是使用波長為數nm~數十nm(能量為0.1keV~2keV)的軟X射線。另外,具體而言,軟X射線的能量的值為0.1、0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9、1.0、1.1、1.2、1.3、1.4、1.5、1.6、1.7、1.8、1.9、2.0(單位都是“keV”),或亦可在這些數值的任兩者之間的範圍內。使用軟X射線的原因在於,其具有電離作用,另一方面,透過性低,且可由數mm左右的聚氯乙烯板遮蔽,可防止對人體等的不良影響。另外,貼附有半導體晶片100的片材110包含聚氯乙烯等塑膠,但由於片材110的厚度非常薄,為數十μm~數百μm,故能夠供軟X射線透過。
在抽吸筒14的周壁,形成著將自該光源40照射的電磁波向半導體晶片100附近導引的照射孔46。亦即,照射孔46沿著連結電磁波的出射點與半導體晶片100的底面的直線延伸。光源
40放射出通過該照射孔46而到達半導體晶片100的底面的位準(level)的電磁波。另外,照射孔46的內周面亦可由金屬等屏蔽材料被覆以阻礙電磁波的透過吸收。另外,為了防止來自照射孔46的氣體洩漏,理想的是該照射孔46藉由封閉構件48封閉,該封閉構件48包含能夠供去靜電用電磁波42透過的材料,例如石英、氟化鈣、氟化鎂。
另外,在去靜電用電磁波42中使用X射線的情況下,亦可在封閉構件48中使用對X射線透過性高的鈹或金剛石。進而,封閉構件48中亦可使用調整了厚度以具有與鈹或金剛石同等的透過性的金屬材料或非金屬材料。
光源40可在拾取處理的期間內一直放射去靜電用電磁波42,亦可在利用頂起銷26使半導體晶片100頂起後立即放射。
接下來,關於如此設置去靜電機構20的理由,將與現有技術加以比較來進行說明。圖3(a)至圖3(c)是表示拾取的情況的概念圖。如所述般,在拾取半導體晶片100時,如圖3(a)、圖3(b)所示,利用頂起銷26使半導體晶片100自片材110的背面側頂起,使半導體晶片100的至少一部分自片材110剝離。若半導體晶片100的至少一部分自片材110剝離,則夾頭18下降,自上側抽吸保持半導體晶片100。
此處,當藉由頂起使半導體晶片100的一部分自片材110剝離時,會在半導體晶片100的背面(黏接膜102的端面)以及片材110的表面產生剝離帶電。結果,半導體晶片100的背面以
及片材110的表面會帶正電或負電。若產生該帶電,則半導體晶片100會因靜電力而飛散或發生靜電擊穿。
因此,以前,提出對半導體晶片100的周邊實施去靜電。然而,現有技術中,是自半導體晶片100的上側去靜電。因此,無法有效率地將最容易產生剝離帶電的半導體晶片100的背面以及片材110的表面去靜電。
另外,以前,所設置的去靜電機構20是如下構成,即,將因電暈放電而生成的離子對(離子化空氣)向去靜電對象部位(本例中半導體晶片100周邊)噴附。該情況下,亦會因噴附離子對的風而引起半導體晶片100飛散等其他問題。
本申請案揭示的拾取裝置10中,如已述般,將具有電離作用的去靜電用電磁波42向半導體晶片100的背面(與片材110的接觸面)放射。另外,在片材110的背後存在抽吸載台12(未示於圖3(a)至圖3(c)中),但如已述般,抽吸載台12包含能夠供去靜電用電磁波42透過的石英、氟化鈣、氟化鎂。或者,包含厚度可調節的材料。另外,片材110包含聚氯乙烯等樹脂,但由於該些材料非常薄,故可透過去靜電用電磁波42。結果,去靜電用電磁波42可到達半導體晶片100的背面。
由去靜電用電磁波42照射的範圍的空氣如圖3(c)所示,藉由該去靜電用電磁波42所具有的電離作用而離子化,從而產生兩極性的離子。亦即,藉由去靜電用電磁波的電離作用,電子自穩定的原子/分子彈飛。電子已被彈飛的原子/分子為正離子,
與彈出的電子鍵結的原子/分子為負離子。如此產生的離子對被作為帶電體的半導體晶片100以及片材110牽引,而去除靜電。
如此,本申請案中揭示的拾取裝置10中,將去靜電用電磁波42照射至容易產生帶電的半導體晶片100的背面以及片材110的表面。因此,與自半導體晶片100的上側或側方嘗試去靜電的現有技術相比,可更有效地去靜電,從而可有效地防止靜電力引起的半導體晶片100的飛散或靜電擊穿。
另外,使用了去靜電用電磁波42的去靜電,亦即光去靜電,與利用電暈放電的去靜電不同,並不需要風。因此,可防止因風導致的半導體晶片100或灰塵的飛散。結果是,可更確實地防止半導體晶片100的飛散或污染,可更適當地拾取半導體晶片100。
夾頭18自上側抽吸保持該已去靜電的半導體晶片100,並搬送至下游步驟的作業部位。若半導體晶片100超出去靜電用電磁波42的放射範圍,則經離子化的原子/分子均會回到穩定的原子/分子。即,在利用了去靜電用電磁波42的光去靜電中,不會發生離子平衡偏離的逆帶電、或經離子化的原子/分子殘留的殘留帶電,亦不會對其後的作業造成不良影響。
根據以上的說明可知,根據本申請案中揭示的拾取裝置10,可更適當地拾取半導體晶片100。另外,至此說明的結構為一例示,只要將去靜電用電磁波42自片材110的背面側照射至半導體晶片100的背面而去靜電,亦可適當變更其他結構。例如,所
述說明中,是將光源40配置於抽吸筒14的側方,但只要能避免與其他構件的干涉,則亦可配置於其他部位,例如抽吸筒14的內部等。而且,所述例中,去靜電用電磁波42的光路為非彎曲的直線狀,亦可於光路中途適當地設置反射構件而使其彎曲。而且,不限於抽吸載台12,抽吸筒14或頂起銷26的至少一部分亦可包含能夠供去靜電用電磁波42透過的材料。
Claims (7)
- 一種拾取裝置,拾取貼附於片材的表面的半導體晶片,所述拾取裝置的特徵在於包括:載台,一部分或全部包含能夠供具有電離作用的去靜電用電磁波透過的材料,且吸附保持所述片材的背面;頂起銷,使所述半導體晶片自所述載台的背面側頂起;以及去靜電機構,使所述去靜電用電磁波自所述載台的背面側透過所述片材而照射至所述半導體晶片的背面,將所述半導體晶片與所述片材之間產生的電荷去靜電。
- 如申請專利範圍第1項所述的拾取裝置,其進而包括抽吸筒,所述抽吸筒覆蓋所述頂起銷的周圍,周面形成著供所述去靜電用電磁波通過的照射孔,所述去靜電機構具有經由所述照射孔將所述去靜電用電磁波照射至所述半導體晶片的光源。
- 如申請專利範圍第1項或第2項所述的拾取裝置,其中所述去靜電機構照射具有3eV~15keV的範圍的光子能量的去靜電用電磁波。
- 如申請專利範圍第1項或第2項所述的拾取裝置,其中所述去靜電機構照射具有紫外線區域的光子能量的所述去靜電用電磁波,所述載台包含石英、氟化鈣、或氟化鎂。
- 如申請專利範圍第1項或第2項所述的拾取裝置,其中所述去靜電機構照射具有X射線區域的光子能量的所述去靜電用電磁波,所述載台的一部分或全部包含鈹、金剛石。
- 如申請專利範圍第1項或第2項所述的拾取裝置,其中所述去靜電機構照射具有X射線區域的光子能量的所述去靜電用電磁波,所述載台的一部分或全部包含藉由厚度控制對所述去靜電用電磁波的透過性的金屬材料或非金屬材料。
- 一種拾取方法,拾取貼附於片材的表面的半導體晶片,所述拾取方法的特徵在於包括下述步驟:利用包含能夠供具有電離作用的去靜電用電磁波透過的材料的載台來吸附保持所述片材的步驟;利用頂起銷使所述半導體晶片自所述載台的背面側頂起,而自所述片材剝離所述半導體晶片的至少一部分的步驟;以及與所述頂起步驟並行地或在所述頂起步驟後立即地,使所述去靜電用電磁波自所述載台的背面側透過所述片材而照射至所述半導體晶片的背面,將所述半導體晶片與所述片材之間產生的電荷去靜電的步驟。
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JP (1) | JP6715353B2 (zh) |
CN (1) | CN110476238B (zh) |
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US11508599B2 (en) | 2022-11-22 |
CN110476238B (zh) | 2023-04-18 |
JP6715353B2 (ja) | 2020-07-01 |
CN110476238A (zh) | 2019-11-19 |
JPWO2018139667A1 (ja) | 2019-07-25 |
TW201832309A (zh) | 2018-09-01 |
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US20200388521A1 (en) | 2020-12-10 |
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