TWI671127B - Process liquid supply method, readable computer storage medium, and process liquid supply device - Google Patents

Abstract

本發明之目的係自濾器去除微小氣泡，藉以抑制濾器之性能降低。 本發明係一種將作為處理液之稀釋劑供給至晶圓上的方法，包括：已脫氣處理液產生步驟，藉由脫氣機構將稀釋劑脫氣處理而產生已脫氣稀釋劑；處理液貯存步驟，將已脫氣稀釋劑貯存至泵P1的貯存室210內；液體通入濾器步驟，使「經由稀釋劑供給管200而與貯存室210的下游側連接之濾器201的更下游側」相較於泵P1的貯存室210內的壓力成為負壓，藉以將貯存室210內的已脫氣稀釋劑通入至濾器201；以及負壓維持步驟，於停止自泵P1的貯存室210往濾器201之稀釋劑之供給後，以既定時間維持使濾器201的下游側成為負壓之狀態。The purpose of the present invention is to remove fine air bubbles from a filter, thereby suppressing a decrease in the performance of the filter. The invention relates to a method for supplying a diluent as a processing liquid to a wafer, including: a step of generating a degassed processing liquid, and generating a degassed diluent by degassing the diluent through a degassing mechanism; a processing liquid In the storage step, the degassed diluent is stored in the storage chamber 210 of the pump P1; the liquid is passed into the filter step, so that "the filter 201 is connected to the downstream side of the storage chamber 210 via the diluent supply pipe 200 and further downstream" Compared with the pressure in the storage chamber 210 of the pump P1 becomes a negative pressure, the deaerated diluent in the storage chamber 210 is passed to the filter 201; and the negative pressure maintaining step is stopped from the storage chamber 210 of the pump P1 to the After the diluent of the filter 201 is supplied, the state where the downstream side of the filter 201 becomes a negative pressure is maintained for a predetermined time.

Description

處理液供給方法、可讀取之電腦記憶媒體及處理液供給裝置Process liquid supply method, readable computer memory medium and process liquid supply device

本發明係關於將處理液供給至基板上之處理液供給方法、可讀取之電腦記憶媒體及處理液供給裝置。 The present invention relates to a processing liquid supply method for supplying a processing liquid to a substrate, a readable computer memory medium, and a processing liquid supply device.

舉例而言，半導體元件的製造過程中之光刻步驟，例如依序進行以下處理等，將既定光阻圖案形成在半導體晶圓上(以下稱作「晶圓」)：塗布處理，將既定處理液供給至作為基板的晶圓上而形成稱作反射防止膜或光阻膜之塗布膜；曝光處理，將光阻膜曝光成既定圖案；以及顯影處理，將已曝光之光阻膜顯影。 For example, the photolithography steps in the manufacturing process of semiconductor elements, such as sequentially performing the following processes, etc., form a predetermined photoresist pattern on a semiconductor wafer (hereinafter referred to as a "wafer"): a coating process, a predetermined process The liquid is supplied onto a wafer as a substrate to form a coating film called an anti-reflection film or a photoresist film; an exposure process to expose the photoresist film into a predetermined pattern; and a development process to develop the exposed photoresist film.

上述塗布處理之中，有時處理液中含有細微異物(微粒)。又，於微粒附著在將處理液加以供給之裝置的泵、閥、配管之類的途徑中之情形下，亦同樣 地有時微粒混入處理液中。因此，吾人將濾器配置在將處理液加以供給之裝置的途徑中，且藉由該濾器而進行微粒之去除(專利文獻1)。 In the coating process, fine foreign matter (fine particles) may be contained in the processing liquid. The same applies to a case where particles are attached to a path such as a pump, a valve, or a pipe of a device for supplying a processing liquid. Ground particles are sometimes mixed into the treatment liquid. Therefore, I have arranged a filter in the path of a device for supplying a treatment liquid, and the filter is used to remove particles (Patent Document 1).

然而，有時處理液內含有氣泡(氣體)。具體而言，處理液通過濾器之際，濾器成為阻力，處理液的壓力降低。藉此，處理液中產生氣泡，且該氣泡游離於濾器內。其結果，氣泡混入濾器而濾器的有效面積會變小，且濾器的性能降低。於是，專利文獻1亦揭露：藉由氣體排除管而將濾器內所積聚之氣泡排出至濾器外。 However, bubbles (gases) may be contained in the processing liquid. Specifically, when the processing liquid passes through the filter, the filter becomes a resistance, and the pressure of the processing liquid decreases. Thereby, air bubbles are generated in the treatment liquid, and the air bubbles are released in the filter. As a result, air bubbles are mixed into the filter, the effective area of the filter is reduced, and the performance of the filter is reduced. Therefore, Patent Document 1 also discloses that the air bubbles accumulated in the filter are discharged to the outside of the filter by a gas exhaust pipe.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Literature]

[專利文獻1]日本特開平成7-326570號公報 [Patent Document 1] Japanese Patent Laid-Open No. 7-326570

但是，雖能藉由氣體排除管而將濾器內較大的氣泡排出至濾器外，但不易將微小氣泡(Micro Bubble)排出至濾器外。 However, although large bubbles in the filter can be discharged to the outside of the filter through the gas exhaust pipe, it is difficult to discharge micro bubbles out of the filter.

本發明係鑒於此點而成者，其目的係自濾器去除微小氣泡，藉以抑制濾器之性能降低。 The present invention has been made in view of this point, and an object thereof is to remove minute air bubbles from a filter, thereby suppressing a decrease in the performance of the filter.

為了達成前述目的，本發明係一種將處理液供給至基板上的方法，其特徵為包括：已脫氣處理液產生步驟，藉由脫氣機構將前述處理液施以脫氣處理而產生已脫氣處理液；處理液貯存步驟，將前述已脫氣處理液貯存至容器內；液體通入濾器步驟，將經由處理液供給管而與前述容器的下游側連接之濾器之更下游側定為與前述容器內的壓力相較係負壓，藉以將前述容器內的前述已脫氣處理液通入前述濾器；以及負壓維持步驟，於停止自前述容器往前述濾器之前述處理液之供給後，以既定時間維持使前述濾器下游側成為負壓之狀態。 In order to achieve the foregoing object, the present invention is a method for supplying a processing liquid onto a substrate, which is characterized by including a step of generating a degassed processing liquid, and applying a degassing treatment to the processing liquid to generate a degassed Gas treatment liquid; treatment liquid storage step, storing the deaerated treatment liquid into the container; liquid passing through the filter step, setting the further downstream side of the filter connected to the downstream side of the container through the processing liquid supply pipe as The pressure in the container is a negative pressure, so that the deaerated treatment liquid in the container is passed into the filter; and a negative pressure maintaining step is performed after the supply of the treatment liquid from the container to the filter is stopped, The state where the downstream side of the filter is brought to a negative pressure is maintained for a predetermined time.

本案發明人得到以下見解：於將處理液通入濾器之際，使濾器內成為負壓，藉以促進來自處理液之氣泡的分離，氣泡變得容易排出。本發明係基於此見解，而於液體通入濾器步驟之中，將濾器下游側定為與容器內的壓力相較係負壓，藉以將容器內的處理液通入濾器，因此能促進濾器內之氣泡的分離及體積膨脹。而且，因為對濾器通入已脫氣處理液，所以已分離及體積膨脹之氣泡溶入此已脫氣處理液，氣泡自濾器去除。又，以既定時間維持濾器的下游側成為負壓之狀態，藉以進一步進行氣泡之去除。因此，依據本發明，能自濾器去除微小氣泡，藉以抑制濾器之性能降低。 The inventor of the present case obtained the following insight: when the treatment liquid is passed into the filter, the inside of the filter becomes a negative pressure, thereby promoting the separation of air bubbles from the treatment liquid, and the air bubbles are easily discharged. The present invention is based on this insight, and in the step of passing the liquid into the filter, the downstream side of the filter is set to a negative pressure compared with the pressure in the container, so that the treatment liquid in the container is passed into the filter, thereby promoting the inside of the filter. Separation and volume expansion of air bubbles. Moreover, since the degassed treatment liquid is passed to the filter, the separated and volume-expanded bubbles are dissolved in the degassed treatment liquid, and the bubbles are removed from the filter. Further, the state where the downstream side of the filter becomes a negative pressure is maintained for a predetermined time, thereby further removing the air bubbles. Therefore, according to the present invention, fine bubbles can be removed from the filter, thereby suppressing a reduction in the performance of the filter.

亦可反複進行前述液體通入濾器步驟與前述負壓維持步驟。 The aforementioned step of passing the liquid into the filter and the aforementioned step of maintaining the negative pressure may be repeated.

另一態樣所成之處理液供給方法，係一種將處理液供給至基板上的方法，其特徵為包括：已脫氣處理液產生步驟，藉由脫氣機構將前述處理液施以脫氣 處理而產生已脫氣處理液；處理液貯存步驟，將前述已脫氣處理液貯存至容器內；液體通入濾器步驟，將經由處理液供給管而與前述容器的下游側連接之濾器之更下游側定為與前述容器內的壓力相較係負壓，藉以將前述容器內的前述已脫氣處理液通入至前述濾器；以及雙向脫氣步驟，由前述濾器的上游側與下游側減壓而將處理液脫氣。 The method for supplying a processing liquid formed in another aspect is a method for supplying a processing liquid onto a substrate, which is characterized by including a step of generating a degassed processing liquid, and degassing the processing liquid by a degassing mechanism. Degassing treatment liquid is generated during processing; the treatment liquid storage step stores the deaerated treatment liquid into the container; the liquid is passed through the filter step, and the filter connected to the downstream side of the container through the treatment liquid supply pipe is further modified. The downstream side is set to a negative pressure compared with the pressure in the container, so that the deaerated treatment liquid in the container is passed to the filter; and a two-way degassing step is reduced from the upstream side and the downstream side of the filter. The treatment liquid was degassed by pressing.

於此場合，亦可反複進行液體通入濾器步驟與雙向脫氣步驟。 In this case, the liquid-passing filter step and the two-way degassing step can be repeated.

亦可更具有：處理液排出步驟，於前述已脫氣處理液產生步驟之前，將前述容器內所貯存之處理液排出至前述容器外。 The method may further include a treatment liquid discharge step of discharging the treatment liquid stored in the container to the outside of the container before the deaerated treatment liquid generation step.

前述液體通入濾器步驟之中，亦可使與前述處理液供給管中之前述濾器的下游側連接之容積可變之貯存室的容積增大，藉以使前述濾器的下游側成為負壓。 In the step of passing the liquid into the filter, the volume of the variable-volume storage chamber connected to the downstream side of the filter in the treatment liquid supply pipe may be increased so that the downstream side of the filter becomes negative pressure.

亦可使前述容器具有容積可變之其他貯存室，且前述液體通入濾器步驟之中，伴隨自前述容器朝向前述濾器之前述已脫氣處理液的移動，而使前述其他貯存室的容積減小。 It is also possible to make the container have another storage chamber with a variable volume, and in the step of passing the liquid into the filter, the volume of the other storage chamber is reduced with the movement of the degassed treatment liquid from the container to the filter. small.

又，另一態樣所成之本發明，提供一種可讀取之電腦記憶媒體，其儲存有程式，此程式係在將處理液供給裝置加以控制之控制部的電腦上動作，用以藉由前述處理液供給裝置而執行前述處理液供給方法。 In addition, the present invention in another aspect provides a readable computer memory medium that stores a program that operates on a computer of a control unit that controls a processing liquid supply device to be used by The processing liquid supply device executes the processing liquid supply method.

再者，另一態樣所成之本發明，係一種處理液供給裝置，自處理液供給源經由處理液供給管而將處理液供給至對基板供給處理液之供給噴嘴，其特徵為包括：容器，暫時貯存由前述處理液供給源供給之處理液，且設在前述處理液供給管中之前述供給噴嘴的上游側；脫氣機構，設在前述處理液供給管中之前述處理液供給源與前述容器之間，將前述處理液施以脫氣處理而產生已脫氣處理液；濾器，設在前述處理液供給管中之前述容器與前述供給噴嘴之間；容積可變之貯存室，連接於自前述處理液供給管中之前述濾器與前述供給噴嘴之間分歧之分歧管；以及控制部，調整前述貯存室的容積，用以使前述貯存室的容積擴大，而將前述處理液供給管中之前述濾器的下游側定為與前述容器內的壓力相較為負壓，藉以將前述容器內的前述已脫氣處理液供給至前述濾器，且於停止自前述容器往前述濾器之前述處理液之供給後，以既定時間維持使前述濾器的下游側成為負壓的狀態。 Furthermore, the present invention in another aspect is a processing liquid supply device, which supplies a processing liquid from a processing liquid supply source to a supply nozzle for supplying a processing liquid to a substrate through a processing liquid supply pipe, and is characterized by comprising: A container temporarily stores a processing liquid supplied from the processing liquid supply source, and is provided on an upstream side of the supply nozzle in the processing liquid supply pipe; and a degassing mechanism, the processing liquid supply source provided in the processing liquid supply pipe Between the container and the container, the treatment liquid is subjected to degassing treatment to produce a degassed treatment liquid; a filter is provided between the container in the treatment liquid supply pipe and the supply nozzle; a storage chamber with a variable volume, A branching pipe connected between the filter and the supply nozzle in the processing liquid supply pipe; and a control unit that adjusts the volume of the storage chamber so as to expand the volume of the storage chamber to supply the processing liquid The downstream side of the filter in the tube is set to a negative pressure relative to the pressure in the container, so that the deaerated treatment liquid in the container is supplied to the Device, and to stop the supply from the container to the filter after the treatment of the liquid to maintain a predetermined period of time so that the downstream side of the filter into a state of negative pressure.

亦可使前述容器具有容積可變之其他貯存室，且前述控制部控制為：使前述貯存室的容積擴大，而於將前述容器內的前述已脫氣處理液供給至前述濾器之際，伴隨自前述容器朝向前述濾器之前述已脫氣處理液的移動，使前述其他貯存室的容積縮小。 The container may have another storage chamber having a variable volume, and the control unit may control the volume of the storage chamber to be increased, and when the deaerated treatment liquid in the container is supplied to the filter, the The movement of the deaerated treatment liquid from the container to the filter reduces the volume of the other storage chamber.

再者，依據另一態樣，處理液供給裝置自處理液供給源經由處理液供給管而將處理液供給至對基板供給處理液之供給噴嘴，其特徵為包括：容器，暫時貯存由前述處理液供給源供給之處理液，且設在前述處理液供給管中之前述供 給噴嘴的上游側；脫氣機構，設在前述處理液供給管中之前述處理液供給源與前述容器之間，將前述處理液施以脫氣處理而產生已脫氣處理液；濾器，設在前述處理液供給管中之前述容器與前述供給噴嘴之間；容積可變之二個貯存室，連接於自前述處理液供給管中之前述濾器與前述供給噴嘴之間分歧之分歧管；以及控制部，調整前述二個貯存室的容積，用以使前述二個貯存室中之一個貯存室的容積擴大，而將前述處理液供給管中之前述濾器的下游側定為與前述容器內的壓力相較戲負壓，藉以將前述容器內的前述已脫氣處理液供給至前述濾器，且於停止自前述容器往前述濾器之前述處理液的供給後，由前述濾器的上游側與下游側減壓而將處理液脫氣。 Further, according to another aspect, the processing liquid supply device supplies the processing liquid from the processing liquid supply source to the supply nozzle for supplying the processing liquid to the substrate through the processing liquid supply pipe, and is characterized in that it includes a container for temporarily storing the aforementioned processing. A processing liquid supplied from a liquid supply source, and the aforementioned supply provided in the aforementioned processing liquid supply pipe The upstream side of the nozzle; a degassing mechanism is provided between the processing liquid supply source and the container in the processing liquid supply pipe, and the processing liquid is degassed to generate a degassed processing liquid; Between the container in the processing liquid supply pipe and the supply nozzle; two storage chambers of variable volume are connected to the branching pipe branching from the filter in the processing liquid supply pipe and the supply nozzle; and The control unit adjusts the volumes of the two storage chambers so as to enlarge the volume of one of the two storage chambers, and sets the downstream side of the filter in the processing liquid supply pipe to be the same as that in the container. The pressure is relatively negative, so that the deaerated treatment liquid in the container is supplied to the filter, and after the supply of the treatment liquid from the container to the filter is stopped, the upstream and downstream sides of the filter The treatment liquid was degassed under reduced pressure.

前述容器亦可連接有：排出管，排出該容器內所貯存之處理液或已脫氣處理液。 The aforementioned container may also be connected with a discharge pipe to discharge the treatment liquid or the deaerated treatment liquid stored in the container.

依據本發明，能自濾器去除微小氣泡，藉以抑制濾器之性能降低。 According to the present invention, minute air bubbles can be removed from the filter, thereby suppressing a decrease in the performance of the filter.

1‧‧‧基板處理系統 1‧‧‧ substrate processing system

10‧‧‧匣盒站 10‧‧‧Box Box Station

11‧‧‧處理站 11‧‧‧processing station

12‧‧‧曝光裝置 12‧‧‧ exposure device

13‧‧‧介面站 13‧‧‧Interface Station

20‧‧‧匣盒載置台 20‧‧‧ Cassette Mounting Table

21‧‧‧匣盒載置板 21‧‧‧ Cassette Loading Plate

22‧‧‧搬運道 22‧‧‧ port

23‧‧‧晶圓搬運裝置 23‧‧‧Wafer Handling Device

30‧‧‧顯影處理裝置 30‧‧‧Development processing device

31‧‧‧下部反射防止膜形成裝置 31‧‧‧Lower reflection preventing film forming device

32‧‧‧光阻塗布裝置 32‧‧‧Photoresist coating device

33‧‧‧上部反射防止膜形成裝置 33‧‧‧ Upper reflection preventing film forming device

40‧‧‧熱處理裝置 40‧‧‧Heat treatment equipment

41‧‧‧接著裝置 41‧‧‧ followed by device

42‧‧‧周邊曝光裝置 42‧‧‧Peripheral exposure device

50~56‧‧‧傳遞裝置 50 ~ 56‧‧‧ delivery device

60~62‧‧‧傳遞裝置 60 ~ 62‧‧‧ delivery device

70‧‧‧晶圓搬運裝置 70‧‧‧ Wafer Handling Device

80‧‧‧穿梭搬運裝置 80‧‧‧ Shuttle handling device

110‧‧‧晶圓搬運裝置 110‧‧‧ Wafer Handling Device

111‧‧‧傳遞裝置 111‧‧‧ delivery device

130‧‧‧處理容器 130‧‧‧handling container

140‧‧‧旋轉夾盤 140‧‧‧Rotary chuck

141‧‧‧夾盤驅動部 141‧‧‧chuck drive

142‧‧‧杯體 142‧‧‧ cup body

143‧‧‧排出管 143‧‧‧Exhaust pipe

144‧‧‧排氣管 144‧‧‧Exhaust pipe

150‧‧‧光阻液供給噴嘴 150‧‧‧Photoresist liquid supply nozzle

151‧‧‧稀釋劑供給噴嘴 151‧‧‧ thinner supply nozzle

152、153‧‧‧臂部 152,153‧‧‧arm

160、161‧‧‧待機部 160, 161‧‧‧Standby

170‧‧‧光阻液供給裝置 170‧‧‧Photoresist liquid supply device

171‧‧‧稀釋劑供給裝置 171‧‧‧ thinner supply device

200‧‧‧釋劑供給管 200‧‧‧ release agent supply tube

201‧‧‧濾器 201‧‧‧ Filter

210‧‧‧貯存室 210‧‧‧Storage Room

211‧‧‧壓力室 211‧‧‧Pressure chamber

220、221‧‧‧切換閥 220, 221‧‧‧ switching valve

222‧‧‧供氣排氣管 222‧‧‧Air supply exhaust pipe

223‧‧‧供氣管 223‧‧‧Air supply pipe

224‧‧‧排氣管 224‧‧‧Exhaust pipe

225‧‧‧空氣***器 225‧‧‧Air Ejector

226‧‧‧驅動空氣源 226‧‧‧Drive Air Source

227‧‧‧驅動空氣管 227‧‧‧Drive Air Pipe

228a、228b‧‧‧調節器 228a, 228b‧‧‧ Regulator

229a、229b‧‧‧切換閥 229a, 229b‧‧‧ switching valve

230、231‧‧‧切換閥 230, 231‧‧‧ switching valve

232‧‧‧氣體供給管 232‧‧‧Gas supply pipe

233、234‧‧‧調節器 233, 234‧‧‧ Regulator

235‧‧‧氣體供給源 235‧‧‧Gas supply source

240~243‧‧‧切換閥 240 ~ 243‧‧‧Switching valve

250‧‧‧流量測定機構 250‧‧‧ Flow Measurement Agency

251‧‧‧循環配管 251‧‧‧Circular piping

252、253‧‧‧切換閥 252, 253‧‧‧ switching valve

260‧‧‧供給切換閥 260‧‧‧Supply switching valve

261‧‧‧循環切換閥 261‧‧‧Circular switching valve

262‧‧‧補充配管 262‧‧‧ supplementary piping

263‧‧‧稀釋劑供給源 263‧‧‧thinner supply source

264‧‧‧補充閥 264‧‧‧ supplementary valve

265‧‧‧排液管 265‧‧‧Drain tube

266、267‧‧‧排液閥 266, 267‧‧‧ drain valve

268‧‧‧止回閥 268‧‧‧Check valve

300‧‧‧箱體 300‧‧‧ case

300a‧‧‧側壁 300a‧‧‧ sidewall

300b‧‧‧底板 300b‧‧‧ floor

301‧‧‧蓋體 301‧‧‧cover

302‧‧‧支持板 302‧‧‧Support board

303‧‧‧風箱構造 303‧‧‧ bellows structure

304‧‧‧活塞板 304‧‧‧Piston plate

310‧‧‧排出口 310‧‧‧Exhaust

311‧‧‧脫氣噴嘴 311‧‧‧ degassing nozzle

312‧‧‧排液口 312‧‧‧Draining port

313‧‧‧連接口 313‧‧‧Connector

314‧‧‧排出管 314‧‧‧Exhaust pipe

315‧‧‧排出閥 315‧‧‧Exhaust valve

320‧‧‧磁鐵 320‧‧‧magnet

321、322‧‧‧感測器 321, 322‧‧‧ sensors

330‧‧‧箱體 330‧‧‧Box

330a‧‧‧導入口 330a‧‧‧Inlet

330b‧‧‧排出口 330b‧‧‧Exhaust

330c‧‧‧排液口 330c‧‧‧ drain port

331‧‧‧濾器元件 331‧‧‧filter element

332‧‧‧濾器收容構件 332‧‧‧Filter housing

332a‧‧‧貫穿孔 332a‧‧‧through hole

333‧‧‧固持構件 333‧‧‧Retaining member

334‧‧‧流通道 334‧‧‧stream channel

340‧‧‧通氣管 340‧‧‧Snorkel

341‧‧‧通氣閥 341‧‧‧Vent valve

500‧‧‧控制部 500‧‧‧Control Department

P1、P2‧‧‧泵 P1, P2‧‧‧ pump

C‧‧‧匣盒 C‧‧‧Box

D‧‧‧晶圓搬運區域 D‧‧‧ Wafer Handling Area

G1~G4‧‧‧第一~第四模塊 G1 ~ G4‧‧‧‧First ~ Fourth Module

W‧‧‧晶圓 W‧‧‧ Wafer

圖1係顯示本實施形態之基板處理系統的構成的概略之俯視圖。 FIG. 1 is a plan view schematically showing the configuration of a substrate processing system according to this embodiment.

圖2係顯示本實施形態之基板處理系統的構成的概略之前視圖。 FIG. 2 is a schematic front view showing the configuration of the substrate processing system according to this embodiment.

圖3係顯示本實施形態之基板處理系統的構成的概略之後視圖。 FIG. 3 is a schematic rear view showing the configuration of the substrate processing system according to this embodiment.

圖4係顯示光阻塗布裝置的構成的概略之縱剖面圖。 FIG. 4 is a longitudinal cross-sectional view showing a schematic configuration of a photoresist coating device.

圖5係顯示稀釋劑供給裝置的構成的概略之配管系統圖。 FIG. 5 is a piping system diagram showing a schematic configuration of a diluent supply device.

圖6係顯示泵的構成的概略的縱剖面之說明圖。 FIG. 6 is an explanatory diagram showing a schematic longitudinal section of the configuration of a pump.

圖7係顯示泵的構成的概略的縱剖面之說明圖。 FIG. 7 is an explanatory diagram showing a schematic longitudinal section of the structure of a pump.

圖8係顯示濾器的構成的概略的縱剖面之說明圖。 Fig. 8 is an explanatory diagram showing a schematic longitudinal section of the structure of a filter.

圖9顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係已實施已脫氣處理液產生步驟與處理液貯存步驟之狀態的說明圖。 FIG. 9 is an explanatory diagram showing a state of a piping system for explaining the outline of the configuration of the diluent supply device, and the degassed treatment liquid generation step and the treatment liquid storage step have been performed.

圖10顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係已實施處理液排出步驟之狀態的說明圖。 FIG. 10 is an explanatory diagram showing a state in which a piping system for explaining the outline of the configuration of the diluent supply device has been subjected to a process liquid discharge step.

圖11顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係將自稀釋劑分離之氣體由通氣管排出之狀態之說明圖。 FIG. 11 is an explanatory diagram showing a piping system for explaining the outline of the configuration of the diluent supply device, and a state where the gas separated from the diluent is discharged from the vent pipe.

圖12顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係由排液管排出稀釋劑之狀態之說明圖。 FIG. 12 is an explanatory diagram showing a state of the piping system for explaining the outline of the configuration of the diluent supply device, and the state where the diluent is discharged from the liquid discharge pipe.

圖13顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係實施液體通入濾器步驟之狀態之說明圖。 FIG. 13 is an explanatory diagram showing a state of a piping system for explaining the outline of the configuration of the diluent supply device, and a step of performing a liquid-passing filter.

圖14顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係將稀釋劑供給至晶圓上之狀態說明圖。 FIG. 14 is an explanatory diagram showing a state in which a piping system for explaining the outline of the configuration of the diluent supply device is configured to supply the diluent to the wafer.

圖15顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係已實施雙向脫氣步驟之狀態之說明圖。 FIG. 15 is an explanatory diagram showing a state of a piping system for explaining the outline of the configuration of the diluent supply device and a two-way degassing step.

圖16顯示僅實施負壓維持步驟之情形下、及於負壓維持步驟之後實施雙向脫氣步驟之情形下之濾器的上下游側的配管內的各壓力之時間經過變化之圖表。 FIG. 16 is a graph showing changes in time of each pressure in the pipes on the upstream and downstream sides of the filter in the case where only the negative pressure maintaining step is performed and the case where the two-way degassing step is performed after the negative pressure maintaining step.

圖17顯示用於說明稀釋劑供給裝置的構成的概略之配管系統、且係顯示由泵將氣泡、稀釋劑排出至系統外之狀態之說明圖。 FIG. 17 is an explanatory diagram showing a piping system for explaining the outline of the configuration of the diluent supply device, and showing a state in which bubbles and diluent are discharged out of the system by a pump.

〔實施發明之較佳形態〕 [Best mode for carrying out the invention]

以下說明本發明實施形態。圖1係將具備本實施形態之處理液供給裝置之基板處理系統1的構成之概略加以顯示的說明圖。圖2及圖3分別係將基板處理系統1的內部構成之概略加以示意性顯示的前視圖與後視圖。此外，本說明書及圖式對實質上具有相同功能性構成之元件標註同一符號，藉以省略重複說明。 Embodiments of the present invention will be described below. FIG. 1 is an explanatory diagram showing the outline of the configuration of a substrate processing system 1 including a processing liquid supply device according to this embodiment. 2 and 3 are a front view and a rear view, respectively, schematically showing the outline of the internal configuration of the substrate processing system 1. In addition, in this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions are omitted.

基板處理系統1如圖1所示，具有將下者一體連接之構成：匣盒站10，將收容有複數片晶圓W之匣盒C搬入搬出；處理站11，具備對晶圓W施行既定處理之複數的各種處理裝置；以及介面站13，在與處理站11鄰接的曝光裝置12之間進行晶圓W的傳遞。 As shown in FIG. 1, the substrate processing system 1 has a structure in which the following are integrally connected: a cassette station 10 for loading and unloading a cassette C containing a plurality of wafers W; and a processing station 11 including a predetermined operation for performing wafer W Various processing apparatuses for processing; and the interface station 13 transfers the wafer W between the exposure apparatuses 12 adjacent to the processing station 11.

匣盒站10設有匣盒載置台20。匣盒載置台20複數地設有：匣盒載置板21，於對著基板處理系統1的外部而將匣盒C搬入搬出之際載置匣盒C。 The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 includes a plurality of cassette mounting plates 21 for mounting the cassette C when the cassette C is carried in and out while facing the outside of the substrate processing system 1.

匣盒站10如圖1所示，設有在沿X方向延伸之搬運道22上自由移動的晶圓搬運裝置23。晶圓搬運裝置23亦沿上下方向及繞鉛直軸(θ方向)自由移動，且能 在各匣盒載置板21上的匣盒C與後述之處理站11的第三模塊G3的傳遞裝置之間搬運晶圓W。 As shown in FIG. 1, the cassette station 10 is provided with a wafer transfer device 23 that is freely movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is also free to move in the vertical direction and around the vertical axis (θ direction), and can The wafer W is transferred between the cassette C on each cassette mounting plate 21 and the transfer device of the third module G3 of the processing station 11 described later.

處理站11設有具備各種裝置之複數模塊，例如四個模塊G1、G2、G3、G4。舉例而言，處理站11的正面側(圖1的X方向負向側)設有第一模塊G1，處理站11的背面側(圖1的X方向正向側)設有第二模塊G2。此外，處理站11的匣盒站10側(圖1的Y方向負向側)設有第三模塊G3，處理站11的介面站13側(圖1的Y方向正向側)設有第四模塊G4。 The processing station 11 is provided with a plurality of modules including various devices, for example, four modules G1, G2, G3, and G4. For example, a first module G1 is provided on the front side (the negative side in the X direction in FIG. 1) of the processing station 11, and a second module G2 is provided on the back side (the positive side in the X direction of FIG. 1) of the processing station 11. In addition, a third module G3 is provided on the cassette station 10 side of the processing station 11 (the negative side in the Y direction in FIG. 1), and a fourth module G3 is disposed on the interface station 13 side of the processing station 11 (the positive side in the Y direction in FIG. 1). Module G4.

舉例而言，第一模塊G1如圖2所示，自下方而依以下順序配置有複數液體處理裝置，例如：顯影處理裝置30，將晶圓W顯影處理；下部反射防止膜形成裝置31，將反射防止膜(以下稱作「下部反射防止膜」)形成在晶圓W的光阻膜的下層；光阻塗布裝置32，將光阻液塗布在晶圓W而形成光阻膜；以及上部反射防止膜形成裝置33，將反射防止膜(以下稱作「上部反射防止膜」)形成在晶圓W的光阻膜的上層。 For example, as shown in FIG. 2, the first module G1 is provided with a plurality of liquid processing devices in the following order from the bottom, for example: a developing processing device 30 for developing a wafer W; a lower reflection preventing film forming device 31 for An anti-reflection film (hereinafter referred to as "lower anti-reflection film") is formed on the lower layer of the photoresist film of the wafer W; a photoresist coating device 32 applies a photoresist liquid to the wafer W to form a photoresist film; and an upper reflection The anti-film formation device 33 forms an anti-reflection film (hereinafter referred to as an "upper anti-reflection film") on the upper layer of the photoresist film of the wafer W.

舉例而言，顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗布裝置32、上部反射防止膜形成裝置33分別沿水平方向排列三個而配置。另外，此等顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗布裝置32、上部反射防止膜形成裝置33的數量或配置可任意選擇。 For example, the developing processing device 30, the lower anti-reflection film forming device 31, the photoresist coating device 32, and the upper anti-reflection film forming device 33 are arranged in line with three in the horizontal direction. In addition, the number or arrangement of these developing treatment devices 30, lower reflection preventing film forming device 31, photoresist coating device 32, and upper reflection preventing film forming device 33 can be arbitrarily selected.

此等顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗布裝置32、上部反射防止膜形成裝置33之類的液體處理裝置例如進行：旋轉塗布(spin coating)，將既定處理液塗布在晶圓W上。旋轉塗布例如由塗布噴嘴將處理液噴吐在晶圓W上，並一併使晶圓W旋轉而使處理液擴散在晶圓W的表面。另外，此等液體處理裝置的構成將後述。 The liquid processing devices such as the development processing device 30, the lower reflection preventing film forming device 31, the photoresist coating device 32, and the upper reflection preventing film forming device 33 perform, for example, spin coating, and apply a predetermined processing liquid on Wafer W. For spin coating, the processing liquid is sprayed onto the wafer W by a coating nozzle, and the wafer W is rotated to diffuse the processing liquid on the surface of the wafer W. The configuration of these liquid processing apparatuses will be described later.

舉例而言，第二模塊G2如圖3所示，沿上下方向與水平方向排列設有：熱處理裝置40，進行晶圓W之加熱或冷卻之類的熱處理；接著(Adhesion)裝置41，用於提昇光阻液與晶圓W之固定性；以及周邊曝光裝置42，將晶圓W的外周部曝光。此等熱處理裝置40、接著裝置41、周邊曝光裝置42的數量或配置亦可任意選擇。 For example, as shown in FIG. 3, the second module G2 is arranged along the vertical and horizontal directions: a heat treatment device 40 for performing heat treatment such as heating or cooling of the wafer W; and an (adhesion) device 41 for Improving the fixity between the photoresist and the wafer W; and the peripheral exposure device 42 exposes the outer periphery of the wafer W. The number or arrangement of these heat treatment devices 40, bonding devices 41, and peripheral exposure devices 42 can also be arbitrarily selected.

舉例而言，第三模塊G3自下方依序設有複數傳遞裝置50、51、52、53、54、55、56。此外，第四模塊G4自下方依序設有複數傳遞裝置60、61、62。 For example, the third module G3 is provided with a plurality of transmission devices 50, 51, 52, 53, 54, 55, 56 in order from below. In addition, the fourth module G4 is provided with a plurality of transmission devices 60, 61, 62 in order from below.

如圖1所示，第一模塊G1~第四模塊G4所圍繞的區域形成有晶圓搬運區域D。晶圓搬運區域D配置有：複數晶圓搬運裝置70，例如具有沿Y方向、X方向、θ方向、及上下方向自由移動的搬運臂。晶圓搬運裝置70移動在晶圓搬運區域D內，能將晶圓W搬運至周圍的第一模塊G1、第二模塊G2、第三模塊G3、及第四模塊G4內的既定裝置。 As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first module G1 to the fourth module G4. The wafer transfer area D is provided with a plurality of wafer transfer devices 70 including, for example, transfer arms that can move freely in the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 moves within the wafer transfer area D, and can transfer the wafer W to predetermined devices in the surrounding first module G1, second module G2, third module G3, and fourth module G4.

此外，晶圓搬運區域D設有在第三模塊G3與第四模塊G4之間直線搬運晶圓W之穿梭(shuttle)搬運裝置80。 In addition, the wafer transfer area D is provided with a shuttle transfer device 80 that linearly transfers the wafer W between the third module G3 and the fourth module G4.

穿梭搬運裝置80例如係沿圖3的Y方向直線自由移動。穿梭搬運裝置80能於支持晶圓W之狀態下沿Y方向移動，並在第三模塊G3的傳遞裝置52與第四模塊G4的傳遞裝置62之間搬運晶圓W。 The shuttle conveying device 80 is free to move linearly in the Y direction in FIG. 3, for example. The shuttle transfer device 80 can move in the Y direction while supporting the wafer W, and transfer the wafer W between the transfer device 52 of the third module G3 and the transfer device 62 of the fourth module G4.

如圖1所示，第三模塊G3的X方向正向側的旁鄰設有晶圓搬運裝置100。晶圓搬運裝置100例如具有沿X方向、θ方向、及上下方向自由移動的搬運臂。晶圓搬運裝置100能於支持晶圓W的狀態下沿上下移動，並將晶圓W搬運至第三模塊G3內的各傳遞裝置。 As shown in FIG. 1, a wafer transfer device 100 is provided adjacent to the X-direction forward side of the third module G3. The wafer transfer apparatus 100 includes, for example, a transfer arm that can move freely in the X direction, the θ direction, and the vertical direction. The wafer transfer device 100 can move up and down while supporting the wafer W, and can transfer the wafer W to each transfer device in the third module G3.

介面站13設有晶圓搬運裝置110與傳遞裝置111。晶圓搬運裝置110例如具有沿Y方向、θ方向及上下方向自由移動的搬運臂。晶圓搬運裝置110例如能將晶圓W支持在搬運臂，而在第四模塊G4內的各傳遞裝置、傳遞裝置111及曝光裝置12之間搬運晶圓W。 The interface station 13 is provided with a wafer transfer device 110 and a transfer device 111. The wafer transfer device 110 includes, for example, a transfer arm that can move freely in the Y direction, the θ direction, and the up-down direction. The wafer transfer device 110 can support the wafer W by a transfer arm, and transfer the wafer W between each transfer device, the transfer device 111, and the exposure device 12 in the fourth module G4.

其次，說明上述液體處理裝置的構成。此外，本實施形態之中，就液體處理裝置的一例而言，說明光阻塗布裝置32的構成。光阻塗布裝置32如圖4所示，具有能密封內部的處理容器130。處理容器130的側面形成有晶圓W的搬入搬出口(未圖示)。 Next, the structure of the said liquid processing apparatus is demonstrated. In addition, in this embodiment, the structure of the photoresist coating apparatus 32 is demonstrated as an example of a liquid processing apparatus. As shown in FIG. 4, the photoresist coating device 32 includes a processing container 130 capable of sealing the inside. A carrying in / out port (not shown) for the wafer W is formed on a side surface of the processing container 130.

處理容器130內設有：旋轉夾盤140，作為將晶圓W固持而使其旋轉的基板固持部。旋轉夾盤140能藉由例如馬達等夾盤驅動部141而旋轉至既定速度。此外，夾盤驅動部141例如設有汽缸等昇降驅動機構，且旋轉夾盤140係自由昇降。 The processing container 130 is provided with a spin chuck 140 as a substrate holding portion that holds and rotates the wafer W. The rotary chuck 140 can be rotated to a predetermined speed by a chuck driving section 141 such as a motor. In addition, the chuck driving section 141 is provided with, for example, a lifting drive mechanism such as a cylinder, and the rotary chuck 140 is free to lift and lower.

旋轉夾盤140的周圍設有將自晶圓W飛散或落下的液體加以接收、回收的杯體142。杯體142的下底面連接有：排出管143，將回收的液體加以排出；以及排氣管144，將杯體142內的環境氣體加以排氣。 A cup 142 is provided around the spin chuck 140 to receive and recover liquid scattered or dropped from the wafer W. The lower bottom surface of the cup 142 is connected to a discharge pipe 143 to discharge the recovered liquid, and an exhaust pipe 144 to exhaust the ambient gas in the cup 142.

又，處理容器130內設有：光阻液供給噴嘴150，供給光阻液；以及稀釋劑供給噴嘴151，供給作為處理液的稀釋劑。光阻液供給噴嘴150及稀釋劑供給噴嘴151分別由臂部152及臂部153支持。各臂部152、153藉由未圖示的驅動機構而沿著圖4的Y方向自由移動。藉此，光阻液供給噴嘴150自由移動在設於杯體142的外方之待機部160與晶圓W的上方之間。同樣地，稀釋劑供給噴嘴151亦自由移動在設於杯體142的外方之待機部161與晶圓W的上方之間。 The processing container 130 is provided with a photoresist liquid supply nozzle 150 to supply a photoresist liquid, and a diluent supply nozzle 151 to supply a diluent as a processing liquid. The photoresist supply nozzle 150 and the diluent supply nozzle 151 are supported by the arm portion 152 and the arm portion 153, respectively. Each of the arm portions 152 and 153 is freely moved in the Y direction in FIG. 4 by a driving mechanism (not shown). Thereby, the photoresist liquid supply nozzle 150 can move freely between the standby portion 160 provided outside the cup body 142 and above the wafer W. Similarly, the thinner supply nozzle 151 also moves freely between the standby portion 161 provided outside the cup body 142 and the upper portion of the wafer W.

各臂部152、153藉由驅動機構(未圖示)而自由昇降，且能調整光阻液供給噴嘴150及稀釋劑供給噴嘴151的高度。 Each of the arm portions 152 and 153 is freely raised and lowered by a driving mechanism (not shown), and the heights of the photoresist liquid supply nozzle 150 and the diluent supply nozzle 151 can be adjusted.

光阻液供給噴嘴150連接有：光阻液供給裝置170，將光阻液供給至該光阻液供給噴嘴150。又，稀釋劑供給噴嘴151連接有：作為處理液供給裝置的稀釋劑供給裝置171，將稀釋劑供給至該稀釋劑供給噴嘴151。 The photoresist liquid supply nozzle 150 is connected to a photoresist liquid supply device 170 and supplies the photoresist liquid to the photoresist liquid supply nozzle 150. The diluent supply nozzle 151 is connected to a diluent supply device 171 as a processing liquid supply device, and supplies the diluent to the diluent supply nozzle 151.

其次，說明此稀釋劑供給裝置171的構成。圖5係顯示稀釋劑供給裝置171的構成之概略之配管系統圖。 Next, the configuration of the diluent supply device 171 will be described. FIG. 5 is a piping system diagram showing a schematic configuration of the diluent supply device 171.

稀釋劑供給裝置171具有：泵P1、P2，經由作為處理液供給管之稀釋劑供給管200，而將作為處理液之稀釋劑供給至稀釋劑供給噴嘴151；以及濾器201，設在稀釋劑供給管200中之泵P1、P2的下游側兼稀釋劑供給噴嘴151的上游側，亦即設在泵P1、P2與稀釋劑供給噴嘴151之間，將混入稀釋劑中的異物或氣泡去除。此外，以下有時將稀釋劑供給管200的泵P1、P2側稱作上游側、將稀釋劑供給噴嘴151側稱作下游側。 The diluent supply device 171 includes pumps P1 and P2 and supplies the diluent as the processing liquid to the diluent supply nozzle 151 via the diluent supply pipe 200 as the processing liquid supply pipe; and the filter 201 is provided on the diluent supply. The downstream side of the pumps P1 and P2 in the tube 200 is also the upstream side of the diluent supply nozzle 151, that is, it is provided between the pumps P1 and P2 and the diluent supply nozzle 151 to remove foreign matter or bubbles mixed in the diluent. In addition, hereinafter, the pumps P1 and P2 of the diluent supply pipe 200 may be referred to as an upstream side, and the diluent supply nozzle 151 side may be referred to as a downstream side.

泵P1、P2對稀釋劑供給噴嘴151壓送稀釋劑，並亦作為將由後述稀釋劑供給源263供給之稀釋劑加以暫時貯存之容器而發揮功能，且包括：容積可變之貯存室210；以及壓力室211，鄰接於貯存室210，且於其內部例如將氮氣等加以供氣排氣，藉以使貯存室210的容積變化。此外，於後描述此泵P1、P2、及濾器201的構成之詳細。 The pumps P1 and P2 pressure-feed the diluent to the diluent supply nozzle 151 and also function as a container for temporarily storing the diluent supplied from a diluent supply source 263 described later, and include a storage chamber 210 with a variable volume; and The pressure chamber 211 is adjacent to the storage chamber 210, and supplies and exhausts nitrogen gas or the like in the pressure chamber 211, thereby changing the volume of the storage chamber 210. In addition, the details of the configuration of the pumps P1, P2, and the filter 201 will be described later.

稀釋劑供給管200在濾器201的上游側分歧，而連接至各泵P1、P2的貯存室210。稀釋劑供給管200的分歧點的上游側設有切換閥220、221。能利用開閉此切換閥220、221，而操作稀釋劑供給管200與貯存室210之連接狀態。 The diluent supply pipe 200 is branched on the upstream side of the filter 201 and is connected to the storage chamber 210 of each of the pumps P1 and P2. Switching valves 220 and 221 are provided on the upstream side of the branch point of the diluent supply pipe 200. The connection state of the diluent supply pipe 200 and the storage chamber 210 can be operated by opening and closing the switching valves 220 and 221.

各泵P1、P2的壓力室211分別連接有供氣排氣管222。供氣排氣管222分別連接有：供氣管223，例如將氮作為加壓用氣體而供給至壓力室211；以及排氣管224，將壓力室211內加以排氣。 An air supply and exhaust pipe 222 is connected to the pressure chamber 211 of each of the pumps P1 and P2. The air supply and exhaust pipe 222 is connected to an air supply pipe 223 for supplying nitrogen to the pressure chamber 211 as a pressurizing gas, and an exhaust pipe 224 for exhausting the pressure chamber 211, for example.

各泵P1、P2的壓力室211所連接之供氣排氣管222，例如其與壓力室211側為相反側之端部匯合，且一排氣管224連接至此匯合之供氣排氣管222。排氣管224之與供氣排氣管222側為相反側的端部連接有空氣***器225。空氣***器225經由驅動空氣管227而連接有驅動該空氣***器225之驅動空氣源226。 The air supply and exhaust pipe 222 connected to the pressure chamber 211 of each of the pumps P1 and P2, for example, merges with the end on the opposite side of the pressure chamber 211 side, and an exhaust pipe 224 is connected to the merged air supply and exhaust pipe 222 . An air ejector 225 is connected to an end of the exhaust pipe 224 opposite to the air supply and exhaust pipe 222 side. The air ejector 225 is connected to a driving air source 226 that drives the air ejector 225 via a driving air pipe 227.

驅動空氣管227排列設有：調節器228a、228b，將流在該驅動空氣管227之驅動空氣的流量加以調節。各調節器228a、228b的下游側設有切換閥229a、229b。調節器228a、228b分別定設為不同流量，且能利用將切換閥229a、229b加以開閉操作，而將供給至空氣***器225之驅動空氣的流量加以調整。藉此，能調整以空氣***器225產生的真空壓。又，分別在相較於供氣排氣管222中之與排氣管224的匯合點更靠泵P1側設有切換閥230、更靠泵P2側設有切換閥231，且能利用將此切換閥230、231加以開閉操作，而選擇是否將泵P1或泵P2中之任一壓力室211加以排氣。 The driving air pipe 227 is provided with regulators 228a and 228b arranged to adjust the flow rate of the driving air flowing through the driving air pipe 227. Switching valves 229a and 229b are provided on the downstream side of each regulator 228a and 228b. The regulators 228a and 228b are respectively set to different flow rates, and the flow rates of the driving air supplied to the air ejector 225 can be adjusted by opening and closing the switching valves 229a and 229b. Thereby, the vacuum pressure generated by the air ejector 225 can be adjusted. In addition, a switching valve 230 is provided on the pump P1 side and a switching valve 231 is provided on the pump P2 side, respectively, compared to the point of convergence with the exhaust pipe 224 in the air supply and exhaust pipe 222, and this valve can be used. The switching valves 230 and 231 are opened and closed, and it is selected whether to evacuate the pressure chamber 211 of either the pump P1 or the pump P2.

供氣管223分別在供氣排氣管222中之切換閥230與泵P1之間、切換閥231與P2之間，各連接有兩處。亦即，本實施形態如圖5所示，合計設有四支供氣管223。而且切換閥230與泵P1之間所連接的供氣管223、切換閥231與泵P2之間所連接的 供氣管223，其等與供氣排氣管222側為相反側之端部分別匯合，且供給加壓用氣體之氣體供給管232分別連接至此匯合之各供氣管223。 The air supply pipe 223 is connected between the switching valve 230 and the pump P1 and between the switching valve 231 and P2 in the air supply and exhaust pipe 222, respectively. That is, as shown in FIG. 5 in this embodiment, a total of four air supply pipes 223 are provided. In addition, the air supply pipe 223 connected between the switching valve 230 and the pump P1, and the connection between the switching valve 231 and the pump P2 The gas supply pipes 223 are respectively merged with ends opposite to the gas supply and exhaust pipe 222 side, and a gas supply pipe 232 for supplying a pressurizing gas is connected to each of the combined gas supply pipes 223.

各氣體供給管232分別設有：調節器233、234，調整流在該氣體供給管232之加壓用氣體的流量。各調節器233、234分別設定為不同流量。各氣體供給管232在較調節器233、234更靠上游側匯合，且匯合後的氣體供給管232連接有對著該氣體供給管232而供給加壓用氣體之氣體供給源235。又，在相較於各供氣管223中之與氣體供給管232之連接點更靠供氣排氣管222側分別設有切換閥240、241、242、243。因此，能藉由操作各切換閥240、241、242、243，而將經由供氣管223而供給至各供氣排氣管222之加壓用氣體的流量加以調整。 Each gas supply pipe 232 is provided with regulators 233 and 234, respectively, and adjusts the flow rate of the pressurizing gas flowing through the gas supply pipe 232. Each regulator 233, 234 is set to a different flow rate. Each of the gas supply pipes 232 meets on the upstream side from the regulators 233 and 234, and a gas supply source 235 that supplies a pressurizing gas to the gas supply pipe 232 is connected to the merged gas supply pipe 232. Further, switching valves 240, 241, 242, and 243 are provided on the gas supply and exhaust pipe 222 side, respectively, as compared to the connection points with the gas supply pipe 232 in each of the gas supply pipes 223. Therefore, by operating each of the switching valves 240, 241, 242, and 243, the flow rate of the pressurizing gas supplied to each of the gas supply and exhaust pipes 222 through the gas supply pipe 223 can be adjusted.

稀釋劑供給管200中之濾器201與稀釋劑供給噴嘴151之間，設有：流量測定機構250，將通過濾器201之稀釋劑的流量加以測定。自流量測定機構250與稀釋劑供給噴嘴151之間分歧設有循環配管251。循環配管251之與稀釋劑供給管200側為相反側的端部分歧而分別連接於泵P1的貯存室210及泵P2的貯存室210。分別在相較於循環配管251的分歧點更靠泵P1側設有切換閥252、更靠泵P2側設有切換閥253。又，分別在稀釋劑供給管200中之與循環配管251之分歧點的下游側設有供給切換閥260、循環配管251中之與稀釋劑供給管200之分歧點的下游側兼切換閥252、253的上游側設有循環切換閥261。因此，當於將供給切換閥260定為閉狀態、將循環切換閥261定為開狀態，且進一步例如將泵P1側的切換閥252定為閉狀態、將泵P2側切換閥253定為開狀態並由泵P1噴吐稀釋劑，則能使該稀釋劑循環在泵P2的貯存室210。 A flow rate measuring mechanism 250 is provided between the filter 201 in the diluent supply pipe 200 and the diluent supply nozzle 151, and measures the flow rate of the diluent passing through the filter 201. A circulation pipe 251 is provided between the self-flow measurement mechanism 250 and the diluent supply nozzle 151. End portions of the circulation pipe 251 opposite to the diluent supply pipe 200 side are partially connected to the storage chamber 210 of the pump P1 and the storage chamber 210 of the pump P2, respectively. A switching valve 252 is provided on the pump P1 side and a switching valve 253 is provided on the pump P2 side at the divergence points of the circulation piping 251. Further, a supply switching valve 260 is provided downstream of a branch point between the diluent supply pipe 200 and the circulation pipe 251, and a downstream side of the branch point between the diluent supply pipe 200 and the switching valve 252 of the circulation pipe 251 is also provided. An upstream side of 253 is provided with a circulation switching valve 261. Therefore, when the supply switching valve 260 is set to a closed state, the circulation switching valve 261 is set to an open state, and for example, the switching valve 252 on the pump P1 side is set to a closed state, and the switching valve 253 on the pump P2 side is set to be open. In this state, the diluent is discharged from the pump P1, so that the diluent can be circulated in the storage chamber 210 of the pump P2.

又，循環配管251中之循環切換閥261與切換閥252、253之間連接有補充配管262。補充配管262中之與循環配管251相反側的端部連接有對著各泵P1、P2供給稀釋劑之稀釋劑供給源263。因此，能自稀釋劑供給源263經由補充配管262及循環配管251而將稀釋劑供給至各泵P1、P2。補充配管262設有：補充閥264，控制來自稀釋劑供給源263之稀釋劑之供給。 A supplementary pipe 262 is connected between the circulation switching valve 261 and the switching valves 252 and 253 in the circulation pipe 251. A diluent supply source 263 for supplying a diluent to each of the pumps P1 and P2 is connected to an end of the supplementary piping 262 opposite to the circulation piping 251. Therefore, the diluent can be supplied from the diluent supply source 263 to the pumps P1 and P2 through the supplementary pipe 262 and the circulation pipe 251. The replenishing pipe 262 is provided with a replenishing valve 264 to control the supply of the diluent from the diluent supply source 263.

舉例而言，自循環配管251與補充配管262之匯合點與循環切換閥261之間分歧設有：排液管265，將該循環配管251內的稀釋劑排出至系統外。排液管265設有排液閥266。又，在相較於排液管265與循環配管251之匯合點更靠泵P1、P2側設有排液切換閥267。因此，能將排液切換閥267定為閉狀態、排液閥266定為開狀態，藉以將循環配管251內的稀釋劑排出至系統外。又，循環配管251與排液管265之分歧點與循環切換閥261之間設有：止回閥268，用以防止稀釋劑之逆流。 For example, a junction between the self-circulation piping 251 and the supplementary piping 262 and the circulation switching valve 261 is provided with a drainage pipe 265 to discharge the diluent in the circulation piping 251 to the outside of the system. The drain pipe 265 is provided with a drain valve 266. In addition, a liquid discharge switching valve 267 is provided on the pump P1 and P2 sides compared to the confluence point of the liquid discharge pipe 265 and the circulation pipe 251. Therefore, the drain switching valve 267 can be set to a closed state and the drain valve 266 can be set to an open state, whereby the diluent in the circulation pipe 251 can be discharged to the outside of the system. In addition, a check valve 268 is provided between the divergence point of the circulation pipe 251 and the drain pipe 265 and the circulation switching valve 261 to prevent reverse flow of the diluent.

其次說明泵P1、P2的構成。此外，泵P1、P2的構成於本實施形態係同一，因此以下說明泵P1，省略說明泵P2。 The configuration of the pumps P1 and P2 will be described next. In addition, since the configurations of the pumps P1 and P2 are the same as those of the present embodiment, the pump P1 will be described below, and the description of the pump P2 will be omitted.

泵P1如圖6所示，包括：略圓筒狀的箱體300，有底而頂部開口；蓋體301，配置在箱體300的上端部；風箱構造(bellows)303，配置在箱體300內，且隔著支持板302而與蓋體301的下底面氣密銜接；以及活塞板304，氣密連接在風箱構造303的下端部。 The pump P1 is shown in FIG. 6 and includes: a slightly cylindrical box 300 with a bottom and an open top; a cover 301 disposed at the upper end of the box 300; and a bellows structure 303 disposed in the box 300, and is air-tightly connected to the lower bottom surface of the cover 301 via a support plate 302; and a piston plate 304 is air-tightly connected to the lower end of the bellows structure 303.

風箱構造303係配置為沿著箱體300的高度方向而伸縮。活塞板304具抵接於箱體300的側壁300a的內側面之略圓盤形狀，且與蓋體301及箱體300的底板300b平行配置。又，活塞板304於保持與側壁300a的內側面之間氣密之狀態下，沿著側壁300a的延伸方向(圖6的上下方向)而自由滑動。藉由此蓋體301、風箱構造303、及活塞板304所圍繞之空間形成貯存室210。同樣地，藉由活塞板304、側壁300a、及底板300b所圍繞之空間形成壓力室211。 The bellows structure 303 is arranged to expand and contract in the height direction of the box 300. The piston plate 304 has a substantially disc shape that abuts the inner side surface of the side wall 300 a of the case 300, and is arranged in parallel with the cover 301 and the bottom plate 300 b of the case 300. In addition, the piston plate 304 is allowed to slide freely along the extending direction of the side wall 300 a (the up-down direction in FIG. 6) while being kept airtight from the inner side surface of the side wall 300 a. A storage chamber 210 is formed by a space surrounded by the cover 301, the bellows structure 303, and the piston plate 304. Similarly, a pressure chamber 211 is formed by a space surrounded by the piston plate 304, the side wall 300a, and the bottom plate 300b.

在蓋體301，貫穿該蓋體301而形成有排出口310、作為脫氣機構之脫氣噴嘴311、排液口312。排出口310連接有稀釋劑供給管200，脫氣噴嘴311連接有循環配管251。在箱體300的底板300b，貫穿該底板300b而形成有連接口313。連接口313連接有供氣排氣管222。因此，自氣體供給源235經由供氣排氣管222而對著壓力室211供給加壓用氣體，藉以例如圖7所示，將壓力室211內加壓，而能將活塞板304往蓋體301的方向推昇。藉此，貯存室210的容積減小，能自排出口310壓送貯存室210內的流體，本實施形態之中即為稀釋劑。相反地，藉由空氣***器225而經由供氣排氣管222將壓力室211內排氣，而能將活塞板304往底板300b的方向拉入。藉此，能使貯存室210的容積增大，換言之，能使貯存室210內成為負壓，而經由脫氣噴嘴311將稀釋劑拉入貯存室210。 A discharge port 310, a degassing nozzle 311 as a degassing mechanism, and a liquid discharge port 312 are formed in the cover 301 through the cover 301. A diluent supply pipe 200 is connected to the discharge port 310, and a circulation pipe 251 is connected to the degassing nozzle 311. A connection port 313 is formed in the bottom plate 300b of the case 300 through the bottom plate 300b. An air supply and exhaust pipe 222 is connected to the connection port 313. Therefore, the pressurizing gas is supplied from the gas supply source 235 to the pressure chamber 211 through the gas supply and exhaust pipe 222, and for example, as shown in FIG. 301 direction pushed up. Thereby, the volume of the storage chamber 210 is reduced, and the fluid in the storage chamber 210 can be pressure-fed from the discharge port 310, which is a diluent in this embodiment. In contrast, the air ejector 225 exhausts the inside of the pressure chamber 211 through the air supply and exhaust pipe 222, and the piston plate 304 can be pulled in the direction of the bottom plate 300b. Thereby, the volume of the storage chamber 210 can be increased, in other words, the inside of the storage chamber 210 can be made a negative pressure, and the diluent can be drawn into the storage chamber 210 through the degassing nozzle 311.

又，蓋體301的排液口312連接有：排出管314，將貯存室210內的稀釋劑排出至系統外。排出管314如圖5所示，設有排出閥315。因此，能例如將切換閥220及切換閥252定為閉狀態、且將排出閥315定為開狀態而將壓力室211內加壓，藉以將貯存室210內的稀釋劑排出至系統外。 A drain pipe 314 is connected to the liquid discharge port 312 of the cover 301 to discharge the diluent in the storage chamber 210 to the outside of the system. The discharge pipe 314 is provided with a discharge valve 315 as shown in FIG. 5. Therefore, for example, the switching valve 220 and the switching valve 252 can be closed, and the discharge valve 315 can be opened to pressurize the inside of the pressure chamber 211 to discharge the diluent in the storage chamber 210 to the outside of the system.

脫氣噴嘴311構成為貯存室210側的流道面積小於循環配管251側的流道面積。因此，當例如自稀釋劑供給源263供給稀釋劑、且稀釋劑自脫氣噴嘴311的循環配管251側朝貯存室210側而流動，則該稀釋劑的流速朝貯存室210側增大。藉此，在脫氣噴嘴311內稀釋劑的靜壓降低，溶解而存於稀釋劑之氣體脫氣。藉此，貯存室210內導入：已由脫氣噴嘴311脫氣處理之處理液即已脫氣稀釋劑；以及自該已脫氣稀釋劑分離之氣體。此外，脫氣噴嘴311的配置不限定於本實施形態的內容，若能將已脫氣處理之稀釋劑供給至貯存室210內，亦可不設有蓋體301。具體而言，例如亦可另外獨立設置在與循環配管251中之補充配管262之匯合點更靠泵P1側。 The deaeration nozzle 311 is configured such that the area of the flow path on the storage chamber 210 side is smaller than the area of the flow path on the circulation pipe 251 side. Therefore, for example, when the diluent is supplied from the diluent supply source 263 and the diluent flows from the circulation pipe 251 side of the degassing nozzle 311 toward the storage chamber 210 side, the flow rate of the diluent increases toward the storage chamber 210 side. As a result, the static pressure of the diluent in the degassing nozzle 311 is reduced, and the gas stored in the diluent is dissolved and degassed. As a result, the storage chamber 210 introduces: the processing liquid that has been degassed by the degassing nozzle 311 is the degassed diluent; and the gas separated from the degassed diluent. In addition, the arrangement of the degassing nozzle 311 is not limited to the content of this embodiment, and if the degassing-treated diluent can be supplied into the storage chamber 210, the cover 301 may not be provided. Specifically, for example, the joint point with the supplementary piping 262 in the circulation piping 251 may be separately provided closer to the pump P1 side.

活塞板304的外周部內建有磁鐵320。又，箱體300的側壁300a的外方，以與磁鐵320相向的方式，自圖6之上至下方向地依此順序設有檢測磁鐵320的磁場之感測器321、322。感測器321設在例如與風箱構造303縮至極限之際之活塞板304的位置(上死點)對應之高度。因此，能藉由感測器321偵測出已無法從泵P1噴吐稀釋劑。換言之，能偵測泵P1內(貯存室210)已成空。感測器322設在大致與活塞板304的下死點對應之高度，能偵測貯存室210內的容積大致已增大至最大。換言之，能偵測泵P1內(貯存室210)已填充稀釋劑。 A magnet 320 is built into the outer peripheral portion of the piston plate 304. Further, sensors 321 and 322 for detecting the magnetic field of the magnet 320 are provided on the outer side of the side wall 300a of the case 300 so as to face the magnet 320 in the order from the top to the bottom in FIG. 6. The sensor 321 is provided at a height corresponding to the position (top dead center) of the piston plate 304 when the bellows structure 303 is retracted to the limit, for example. Therefore, the sensor 321 can detect that the diluent cannot be discharged from the pump P1. In other words, it can be detected that the inside of the pump P1 (the storage chamber 210) is empty. The sensor 322 is disposed at a height substantially corresponding to the bottom dead center of the piston plate 304, and can detect that the volume in the storage chamber 210 has approximately increased to a maximum. In other words, it can be detected that the diluent has been filled in the pump P1 (the storage chamber 210).

其次，說明濾器201的構成。濾器201如圖8所示，包括：略圓筒狀的箱體330，有底且頂部開口；濾器元件331，設在箱體330內，將異物或氣泡加以過濾、補捉；濾器收容構件332，收容濾器元件331；以及固持構件333，固持濾器收容構 件332。箱體330的頂部形成有：導入口330a，將自泵P1、P2供給之稀釋劑導入箱體330的內部；排出口330b，將由濾器元件331過濾之稀釋劑排出至箱體330的外部；以及排液口330c，將未以濾器元件331過濾過之稀釋劑直接排出至箱體330的外部。 Next, the configuration of the filter 201 will be described. As shown in FIG. 8, the filter 201 includes: a slightly cylindrical box 330 with a bottom and an open top; a filter element 331 provided in the box 330 to filter and catch foreign objects or bubbles; and a filter receiving member 332 To receive the filter element 331; and a holding member 333 to hold the filter receiving structure Piece 332. The top of the tank 330 is formed with: an introduction port 330a for introducing the diluent supplied from the pumps P1 and P2 into the interior of the tank 330; and a discharge port 330b for discharging the diluent filtered by the filter element 331 to the outside of the tank 330; and The liquid discharge port 330c directly discharges the diluent that has not been filtered by the filter element 331 to the outside of the tank 330.

濾器元件331具略圓筒狀，且例如由尼龍或聚乙烯等構成。濾器收容構件332構成為覆蓋濾器元件331的內側面及外面。濾器收容構件332中之與濾器元件331的內側面及外側面對應之處形成有複數貫穿孔332a。 The filter element 331 has a substantially cylindrical shape, and is made of, for example, nylon, polyethylene, or the like. The filter housing member 332 is configured to cover the inner side surface and the outer surface of the filter element 331. A plurality of through holes 332 a are formed in the filter receiving member 332 at positions corresponding to the inner and outer sides of the filter element 331.

固持構件333構成為：於固持濾器收容構件332之狀態下，濾器收容構件332的貫穿孔332a的至少一部分不封閉。又，固持構件333配置在濾器元件331係與箱體330大致同軸之位置。 The holding member 333 is configured such that at least a part of the through hole 332a of the filter accommodating member 332 is not closed while the filter accommodating member 332 is being held. The holding member 333 is disposed at a position where the filter element 331 is substantially coaxial with the case 330.

又，固持構件333的外面或濾器收容構件332與箱體330之間形成有既定間隙，作為使自導入口330a導入之稀釋劑流通的流通道334而發揮功能。 In addition, a predetermined gap is formed on the outer surface of the holding member 333 or between the filter housing member 332 and the case 330, and functions as a flow passage 334 through which the diluent introduced from the introduction port 330a flows.

導入口330a及排出口330b連接有稀釋劑供給管200，而且，自導入口330a導入並通過濾器元件331之稀釋劑從排出口330b排出。又，排液口330c如圖5所示，連接有通氣管340，能例如將供給切換閥260與循環切換閥261定為閉狀態，並從泵P1或泵P2壓送稀釋劑，藉以將箱體330內的稀釋劑或氣體由排液口330c排出至通氣管340。通氣管340設有通氣閥341。 The diluent supply pipe 200 is connected to the introduction port 330a and the discharge port 330b, and the diluent introduced from the introduction port 330a and passed through the filter element 331 is discharged from the discharge port 330b. Further, as shown in FIG. 5, the drain port 330 c is connected to a vent pipe 340. For example, the supply switching valve 260 and the circulation switching valve 261 can be closed, and the diluent can be pressure-fed from the pump P1 or the pump P2 and the tank The diluent or gas in the body 330 is discharged to the vent pipe 340 through the liquid discharge port 330c. The vent pipe 340 is provided with a vent valve 341.

此外，其他液體處理裝置即顯影處理裝置30、下部反射防止膜形成裝置31、上部反射防止膜形成裝置33之構成，係噴嘴形狀、數量、自噴嘴供給之液不同，此外與上述光阻塗布裝置32的構成同樣，因此省略說明。 In addition, the structure of other liquid processing devices, namely, the developing processing device 30, the lower reflection preventing film forming device 31, and the upper reflection preventing film forming device 33, is different from the nozzle shape, number, and liquid supplied from the nozzle, and is different from the above-mentioned photoresist coating device. The configuration of 32 is the same, so the description is omitted.

以上基板處理系統1如圖1所示，設有控制部500。控制部500例如係電腦，且具有程式儲存部(未圖示)。程式儲存部儲存有將基板處理系統1中之晶圓W的處理加以控制之程式。又，程式儲存部亦儲存有用於將上述各種處理裝置或搬送裝置等的驅動系統的動作加以控制而實現基板處理系統1中之後述基板處理之程式。此外，前述程式例如亦可係記錄於電腦可讀取之硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等可在電腦讀取之記憶媒體H、且由此記憶媒體安裝至控制部500。 The above substrate processing system 1 is provided with a control unit 500 as shown in FIG. 1. The control unit 500 is, for example, a computer and includes a program storage unit (not shown). The program storage unit stores a program that controls the processing of the wafer W in the substrate processing system 1. In addition, the program storage unit also stores programs for controlling the operations of the drive systems such as the various processing apparatuses and conveying apparatuses described above to realize substrate processing described later in the substrate processing system 1. In addition, the aforementioned program may be recorded on a computer-readable storage medium H, such as a hard disk (HD), a flexible disk (FD), a compact disc (CD), a magneto-optical disk (MO), and a memory card that can be read by the computer Then, the storage medium is mounted on the control section 500.

此外，於無特別說明之情形下，設在稀釋劑供給裝置171的各閥係使用電磁閥或氣動閥之類可藉由遙距控制而自動開閉者。而且，此等各閥或感測器321、322等全部電性連接至控制部500，並利用控制部500適當進行狀態監視及操作。 In addition, unless otherwise specified, each valve provided in the diluent supply device 171 uses a solenoid valve or a pneumatic valve and can be automatically opened and closed by remote control. In addition, all of these valves or sensors 321, 322, etc. are electrically connected to the control unit 500, and the state monitoring and operation are appropriately performed by the control unit 500.

本實施形態之基板處理系統1構成為如同以上說明。其次，說明使用此基板處理系統1而進行晶圓處理。 The substrate processing system 1 of this embodiment is configured as described above. Next, wafer processing using this substrate processing system 1 will be described.

首先，將收納有複數晶圓W的匣盒C搬入至基板處理系統1的匣盒站10，且藉由晶圓搬運裝置23而將匣盒C內的各晶圓W依序搬運至處理站11的傳遞裝置53。 First, a cassette C containing a plurality of wafers W is carried into a cassette station 10 of the substrate processing system 1, and each wafer W in the cassette C is sequentially transferred to a processing station by a wafer transfer device 23. 11 的 保护 装置 53。 11 of the transmission device 53.

其次，將晶圓W搬運至第二模塊G2的熱處理裝置40並進行溫度調節處理。其後，將晶圓W藉由晶圓搬運裝置70而搬運至例如第一模塊G1的下部反射防止膜形成裝置31，將下部反射防止膜形成在晶圓W上。其後，將晶圓W搬運至第二模塊G2的熱處理裝置40，進行加熱處理、溫度調節。 Next, the wafer W is transferred to the heat treatment apparatus 40 of the second module G2 and subjected to a temperature adjustment process. Thereafter, the wafer W is transferred to, for example, the lower reflection preventing film forming device 31 of the first module G1 by the wafer transfer device 70, and the lower reflection preventing film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second module G2, and is subjected to heat treatment and temperature adjustment.

其次，將晶圓W搬運至接著裝置41，進行接著處理。其後，將晶圓W搬運至第一模塊G1的光阻塗布裝置32，在晶圓W上形成光阻膜。 Next, the wafer W is transferred to the bonding apparatus 41 and is subjected to a bonding process. Thereafter, the wafer W is transferred to the photoresist coating device 32 of the first module G1, and a photoresist film is formed on the wafer W.

於此，詳述光阻塗布裝置32中之光阻塗布處理。光阻的塗布處理之際，預先產生已脫氣稀釋劑。已脫氣稀釋劑之產生之際，例如圖9所示，將切換閥220、221、253、排液切換閥267、排出閥315定為閉狀態，並且一併將補充閥264及切換閥252定為開狀態，而由稀釋劑供給源263將稀釋劑供給至例泵P1內。藉此，藉由脫氣噴嘴311，稀釋劑受到脫氣處理，產生作為已脫氣處理液之已脫氣稀釋劑(已脫氣處理液產生步驟)，並且一併將已脫氣稀釋劑貯存至泵P1的貯存室210內(處理液貯存步驟)。又，由稀釋劑供給源263供給稀釋劑之際，將切換閥230定為開狀態、切換閥231定為閉狀態，例如使用調節器228a的系統而驅動空氣***器225，藉以使壓力室211成為負壓而推降活塞板304。此外，圖9~圖15之中，以塗黑表示閉狀態、且以粗線表示稀釋劑或氣體之類的流體流通之管，藉以省略說明其它閥之開閉狀態。 Here, the photoresist coating process in the photoresist coating device 32 will be described in detail. During the photoresist coating process, a degassed diluent is generated in advance. When the degassed diluent is produced, for example, as shown in FIG. 9, the switching valves 220, 221, 253, the drain switching valve 267, and the discharging valve 315 are closed, and the supplementary valve 264 and the switching valve 252 are also closed. The on state is set, and the diluent is supplied from the diluent supply source 263 into the example pump P1. Thereby, through the degassing nozzle 311, the diluent is subjected to degassing treatment to generate a degassed diluent as a degassed processing liquid (degassed processing liquid generation step), and the degassed diluent is stored together Into the storage chamber 210 of the pump P1 (processing liquid storage step). When the diluent is supplied from the diluent supply source 263, the switching valve 230 is set to the open state and the switching valve 231 is set to the closed state. For example, the air ejector 225 is driven by using a system of the regulator 228a to make the pressure chamber 211 becomes negative pressure and pushes down the piston plate 304. In addition, in FIG. 9 to FIG. 15, the closed state is indicated by blackening, and a fluid flow such as a diluent or a gas is indicated by a thick line, and the opening and closing states of other valves are omitted.

此外，於稀釋劑殘留在泵P1的貯存室210內之情形下，亦可於進行已脫氣處理液產生步驟前，例如圖10所示，將泵P1的系統的排出閥315定為開狀態，而例如使用調節器233的系統而由氣體供給源235供給加壓用氣體，加壓泵P1的壓力室211內，藉以將貯存室210內的稀釋劑由排出管314排出(處理液排出步驟)。 In addition, in the case where the diluent remains in the storage chamber 210 of the pump P1, the exhaust valve 315 of the system of the pump P1 may be set to the open state before the degassing treatment liquid generation step is performed, for example, as shown in FIG. 10. For example, the system using the regulator 233 is used to supply the gas for pressurization from the gas supply source 235, and the pressure chamber 211 of the pressure pump P1 is used to discharge the diluent in the storage chamber 210 through the discharge pipe 314 (processing liquid discharge step) ).

其次，如圖11所示，停止空氣***器225，並且一併將補充閥264及切換閥252切換為閉狀態後，將切換閥220定為開狀態。而且，例如使用調節器233的系統而由氣體供給源235供給加壓用氣體，加壓泵P1的壓力室211內。此際，將供給切換閥260及循環切換閥261定為閉狀態，且將設在濾器201之通氣閥341定為開狀態，由泵P1將貯存室210內的稀釋劑壓送至稀釋劑供給管200。藉此，藉由脫氣噴嘴311而自稀釋劑分離之氣體係與貯存室210內的稀釋劑一同自通氣管340排出，且稀釋劑供給管200的濾器201的上游側受已脫氣稀釋劑充滿。此外，此際，將調節器233設定為供給至濾器201之已脫氣稀釋劑的流量係約60mL/min左右。 Next, as shown in FIG. 11, after the air ejector 225 is stopped and the supplementary valve 264 and the switching valve 252 are switched to the closed state, the switching valve 220 is set to the open state. Further, for example, a system using the regulator 233 is used to supply the gas for pressurization from the gas supply source 235 and the pressure chamber 211 of the pressure pump P1 is supplied. At this time, the supply switching valve 260 and the circulation switching valve 261 are set to a closed state, and the vent valve 341 provided in the filter 201 is set to an open state, and the diluent in the storage chamber 210 is pressure-fed to the diluent supply by the pump P1. Tube 200. Thereby, the gas system separated from the diluent by the degassing nozzle 311 is discharged from the vent pipe 340 together with the diluent in the storage chamber 210, and the upstream side of the filter 201 of the diluent supply pipe 200 receives the degassed diluent. full. In this case, the regulator 233 is set so that the flow rate of the degassed diluent supplied to the filter 201 is about 60 mL / min.

其次，以既定時間進行60mL/min之已脫氣稀釋劑之供給後，由調節器234的系統進行朝向泵P1的壓力室211之加壓用氣體之供給，例如將供給至濾器201之已脫氣稀釋劑的流量增加為約75mL/min左右。當起初即將較大流量的已脫氣稀釋劑供給至濾器201的濾器元件331，則會有已脫氣稀釋劑未滲透濾器元件331全體，而大小氣泡仍存在於濾器元件331內之可能性，但如上所述，能首先以小流量供給已脫氣稀釋劑，而使已脫氣稀釋劑逐漸滲透濾器元件331，有效率地將氣泡排出至濾器201的外部。 Next, after the degassed diluent is supplied at a predetermined time of 60 mL / min, the system of the regulator 234 performs the supply of the pressurizing gas toward the pressure chamber 211 of the pump P1, for example, the degassed supply to the filter 201 The flow rate of the gas diluent was increased to about 75 mL / min. When a large flow of degassed diluent is initially supplied to the filter element 331 of the filter 201, there is a possibility that the degassed diluent does not permeate the entire filter element 331, and large and small bubbles may still exist in the filter element 331. However, as described above, the degassed diluent can be firstly supplied at a small flow rate, and the degassed diluent can gradually penetrate the filter element 331 to efficiently discharge bubbles to the outside of the filter 201.

其次，如圖12所示，將通氣閥341定為閉狀態，且將循環切換閥261及排液閥266定為開狀態而由泵P1壓送已脫氣稀釋劑，由排液閥266排出已脫氣稀釋劑。藉此，循環配管251內受通過濾器201之已脫氣稀釋劑清潔，成為潔淨狀態。 Next, as shown in FIG. 12, the vent valve 341 is set to a closed state, and the circulation switching valve 261 and the drain valve 266 are set to an open state. The deaerated diluent is pressure-fed by the pump P1 and discharged by the drain valve 266. The thinner has been degassed. Thereby, the inside of the circulation pipe 251 is cleaned by the deaerated diluent passing through the filter 201, and becomes a clean state.

其次，如圖13所示，將排液閥266定為閉狀態、將排液切換閥267及泵P2的切換閥253定為開狀態。並且一併使用調節器228b的系統而驅動空氣***器225，藉以使壓力室211成為負壓。此外，流在調節器228b的系統之驅動空氣的流量大於流在調節器228a的系統之驅動空氣的流量。亦即，壓力室211內的壓力較使用調節器228a的系統之情況低。藉由此空氣***器225的驅動，將泵P2的活塞板304往下方拉入，使泵P2的貯存室210內相對於泵P1的貯存室210為負壓。藉此，於稀釋劑供給管200及循環配管251內成為負壓(低於大氣壓的壓力)的狀態下，將泵P1內的已脫氣稀釋劑經由濾器201拉入泵P2內(液體通入濾器步驟)。藉此，例如濾器201內亦為負壓，因此，泵P1所行之已脫氣稀釋劑之供給時無法完全去除之濾器201內的氣泡的體積膨脹，容易由濾器201內排出。此外，於僅藉由空氣***器225之驅動使泵P2的壓力室211成為負壓而無法提昇泵P1的活塞板304之情形下，亦可適當將加壓用氣體供給至泵P1的壓力室211內而使貯存室210的容積減小，藉以輔助活塞板304的提昇。於此情形，例如由調節器233的系統，以泵P1的貯存室210內的壓力不高於泵P2的貯存室210內的壓力方式，換言之，以維持稀釋劑供給管200或循環配管251內係低於大氣壓之負壓狀態之方式，進行朝向泵P1的壓力室211之加壓用氣體之供給。 Next, as shown in FIG. 13, the drain valve 266 is set to a closed state, and the drain switching valve 267 and the switching valve 253 of the pump P2 are set to an open state. Furthermore, the system of the regulator 228b is used together to drive the air ejector 225 so that the pressure chamber 211 becomes a negative pressure. In addition, the flow rate of the driving air flowing through the system of the regulator 228b is greater than the flow rate of the driving air flowing through the system of the regulator 228a. That is, the pressure in the pressure chamber 211 is lower than in the case of a system using the regulator 228a. By the drive of the air ejector 225, the piston plate 304 of the pump P2 is pulled in downward, so that the storage chamber 210 of the pump P2 has a negative pressure relative to the storage chamber 210 of the pump P1. As a result, the degassed diluent in the pump P1 is drawn into the pump P2 through the filter 201 in a state where the diluent supply pipe 200 and the circulation pipe 251 are under a negative pressure (a pressure lower than the atmospheric pressure) (the liquid passes Filter step). Therefore, for example, the inside of the filter 201 is also under a negative pressure. Therefore, the volume expansion of the air bubbles in the filter 201 that cannot be completely removed when the deaerated diluent supplied by the pump P1 is expanded, and the air is easily discharged from the filter 201. In addition, in the case where the pressure chamber 211 of the pump P2 becomes a negative pressure only by the drive of the air ejector 225 and the piston plate 304 of the pump P1 cannot be lifted, the pressurizing gas may be appropriately supplied to the pressure of the pump P1 The volume of the storage chamber 210 is reduced in the chamber 211 to assist the lifting of the piston plate 304. In this case, for example, by the system of the regulator 233, the pressure in the storage chamber 210 of the pump P1 is not higher than the pressure in the storage chamber 210 of the pump P2, in other words, to maintain the diluent supply pipe 200 or the circulation pipe 251 The system is in a negative pressure state lower than atmospheric pressure, and the supply of the pressurizing gas to the pressure chamber 211 of the pump P1 is performed.

其後，將稀釋劑供給管200及循環配管251內以負壓狀態維持，並直接停止泵P2所行之朝向濾器201之液體通入，並將此狀態保持固定時間(負壓維持步驟)。藉此，進一步促進濾器201內之氣泡的膨脹，來自濾器201之氣泡的排出變容易。又，氣泡溶解於已脫氣稀釋劑，亦促進來自濾器201內之氣泡的去除。此外，例如利用將泵P1的下游側的切換閥220從開狀態往閉狀態操作而實現維持負壓並且停止朝向濾器201之液體通入。 Thereafter, the diluent supply pipe 200 and the circulation pipe 251 are maintained in a negative pressure state, and the liquid flow to the filter 201 by the pump P2 is directly stopped, and this state is maintained for a fixed time (negative pressure maintaining step). Thereby, the expansion of the air bubbles in the filter 201 is further promoted, and the air bubbles from the filter 201 are easily discharged. In addition, the bubbles are dissolved in the degassed diluent, and the removal of bubbles from the filter 201 is promoted. In addition, for example, by operating the switching valve 220 on the downstream side of the pump P1 from the open state to the closed state, it is possible to maintain the negative pressure and stop the liquid flow into the filter 201.

以固定時間維持負壓後，再將切換閥220定為開狀態，將已脫氣稀釋劑自泵P1的貯存室210拉入泵P2的貯存室210。亦即，再次進行液體通入濾器步驟。藉此，因為重新將已脫氣稀釋劑供給至濾器201，所以於負壓維持步驟，即使例如氣泡溶存於濾器201內的已脫氣稀釋劑達飽和狀態為止，亦能藉由重新供給之已脫氣稀釋劑而再次進行氣泡的去除。而且，再次進行負壓維持步驟，進行進一步之氣泡的去除。而且，以既定次數進行液體通入濾器步驟與負壓維持步驟，藉以將濾器201內的氣泡幾乎完全去除。 After maintaining the negative pressure for a fixed time, the switching valve 220 is set to the open state, and the degassed diluent is pulled from the storage chamber 210 of the pump P1 into the storage chamber 210 of the pump P2. That is, the liquid-passing filter step is performed again. With this, since the deaerated diluent is re-supplied to the filter 201, even if the deaerated diluent in which the bubbles are dissolved in the filter 201 reaches a saturated state in the negative pressure maintaining step, the deaerated diluent can be re-supplied. The diluent was degassed and air bubbles were removed again. Then, the negative pressure maintaining step is performed again, and further bubbles are removed. Furthermore, the liquid-passing filter step and the negative pressure maintaining step are performed a predetermined number of times, thereby almost completely removing bubbles in the filter 201.

其後，例如當已脫氣稀釋劑以既定量貯存至泵P2的貯存室210，則如圖14所示，循環切換閥261切換為閉狀態、供給切換閥260切換為開狀態。並且一併停止空氣***器225的驅動，且一併使用調節器234的系統而將加壓用氣體供給至泵P2的壓力室211。藉此，泵P2內的已脫氣稀釋劑由稀釋劑供給噴嘴151供給至晶圓W上，而將晶圓W預濕。其次，光阻液由光阻液供給噴嘴150供給至晶圓W上，而在晶圓W上形成光阻膜。 Thereafter, for example, when the degassed diluent is stored in the storage chamber 210 of the pump P2 at a predetermined amount, as shown in FIG. 14, the circulation switching valve 261 is switched to a closed state, and the supply switching valve 260 is switched to an open state. The driving of the air ejector 225 is also stopped, and the system of the regulator 234 is also used to supply the pressurizing gas to the pressure chamber 211 of the pump P2. Thereby, the deaerated diluent in the pump P2 is supplied onto the wafer W from the diluent supply nozzle 151, and the wafer W is pre-wet. Next, the photoresist liquid is supplied onto the wafer W from the photoresist liquid supply nozzle 150, and a photoresist film is formed on the wafer W.

當光阻膜形成在晶圓W時，則其次將晶圓W搬運至第一模塊G1的上部反射防止膜形成裝置33，將上部反射防止膜形成在晶圓W上(圖7的步驟S3)。其後，將晶圓W搬運至第二模塊G2的熱處理裝置40，進行加熱處理。其後，將晶圓W搬運至周邊曝光裝置42，進行周邊曝光處理。 When the photoresist film is formed on the wafer W, the wafer W is then transferred to the upper anti-reflection film forming device 33 of the first module G1, and the upper anti-reflection film is formed on the wafer W (step S3 in FIG. 7). . Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second module G2 and is subjected to heat treatment. Thereafter, the wafer W is transferred to the peripheral exposure device 42 and subjected to peripheral exposure processing.

其次，將晶圓W藉由晶圓搬運裝置100搬運至傳遞裝置52，且藉由穿梭搬運裝置80而搬運至第四模塊G4的傳遞裝置62。其後，將晶圓W藉由介面站13的晶圓搬運裝置110搬運至曝光裝置12，以既定圖案進行曝光處理。 Next, the wafer W is transferred to the transfer device 52 by the wafer transfer device 100, and is transferred to the transfer device 62 of the fourth module G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the exposure device 12 by the wafer transfer device 110 of the interface station 13, and exposure processing is performed in a predetermined pattern.

其次，將晶圓W藉由晶圓搬運裝置70搬運至熱處理裝置40，進行曝光後烘烤處理。藉此，藉由在光阻膜的曝光部產生的氧而使光阻進行去保護反應。此後，將晶圓W藉由晶圓搬運裝置70搬運至顯影處理裝置30，進行顯影處理。 Next, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70 and subjected to a post-exposure baking process. Thereby, the photoresist undergoes a deprotection reaction by oxygen generated in the exposed portion of the photoresist film. After that, the wafer W is transferred to the developing processing device 30 by the wafer transfer device 70 to perform a developing process.

顯影處理結束後，將晶圓W搬運至熱處理裝置40，進行後烘烤處理(圖7的步驟S7)。然後，晶圓W藉由熱處理裝置40進行溫度調整。其後，晶圓W經由晶圓搬運裝置70、晶圓搬運裝置23而搬運至既定的匣盒載置板21的匣盒C，結束一連串的光刻步驟。 After the development process is completed, the wafer W is transferred to the heat treatment apparatus 40 and subjected to a post-baking process (step S7 in FIG. 7). Then, the wafer W is temperature-adjusted by the heat treatment apparatus 40. Thereafter, the wafer W is transferred to the cassette C of the predetermined cassette mounting plate 21 via the wafer transfer device 70 and the wafer transfer device 23, and a series of photolithography steps are ended.

依據以上實施形態，將濾器201的下游側之泵P2的貯存室210定為相對於泵P1的貯存室210內的壓力為負壓，藉以將泵P1內的已脫氣稀釋劑液體通入至濾器201，因此能促進濾器201內之氣泡的分離及體積膨脹。而且，因為對著濾器201通人已脫氣稀釋劑液體，所以已分離及體積膨脹之氣泡溶入此已脫氣稀釋劑， 而將氣泡自濾器201去除。又，藉由以既定時間維持使濾器201的下游側成為負壓之狀態，進一步促進氣泡之去除。因此，能藉由自濾器201去除微小氣泡，而抑制濾器201之性能降低。 According to the above embodiment, the storage chamber 210 of the pump P2 on the downstream side of the filter 201 is set to a negative pressure relative to the pressure in the storage chamber 210 of the pump P1, so that the deaerated diluent liquid in the pump P1 is passed to The filter 201 can promote the separation and volume expansion of air bubbles in the filter 201. Moreover, since the deaerated diluent liquid is passed through the filter 201, the separated and volume-expanded bubbles are dissolved in the deaerated diluent, Air bubbles are removed from the filter 201. Further, by maintaining the state where the downstream side of the filter 201 becomes a negative pressure for a predetermined time, the removal of air bubbles is further promoted. Therefore, it is possible to suppress the reduction of the performance of the filter 201 by removing fine air bubbles from the filter 201.

又，能藉由反複進行負壓所行之朝向濾器201之液體通入(液體通入濾器步驟)、負壓之維持(負壓維持步驟)，而更確實去除濾器201內的氣泡。 In addition, it is possible to more reliably remove air bubbles in the filter 201 by repeatedly carrying out the liquid flow into the filter 201 (liquid-passing filter step) and the maintenance of the negative pressure (negative pressure maintaining step) performed by the negative pressure.

再者，有效率地自濾器201去除氣泡，藉以於例如因濾器201之保養而交換濾器元件331之情形後等，令稀釋劑供給裝置171迅速成為可使用，並且能一併將使用於濾器201之復原之藥液的使用量降低。 In addition, the air bubbles are removed from the filter 201 efficiently, so that, for example, after the filter element 331 is exchanged due to the maintenance of the filter 201, the diluent supply device 171 can be quickly used and can be used for the filter 201 at the same time. The amount of healing liquid used is reduced.

此外，本案發明人已確認：如同本發明地藉由負壓將已脫氣稀釋劑通入至濾器201，且反複進行液體通入濾器步驟與負壓維持步驟，相較於對著濾器加壓而通入液體之情形，稀釋劑內的氣泡約能降低90%。 In addition, the inventors of the present case have confirmed that, as in the present invention, the degassed diluent is passed into the filter 201 by negative pressure, and the liquid-passing filter step and the negative pressure maintaining step are repeatedly performed, as compared to pressurizing the filter. In the case of liquid, the air bubbles in the diluent can be reduced by about 90%.

以上實施形態之中，將使已脫氣稀釋劑自泵P1朝向泵P2流通之情形為例說明，但已脫氣稀釋劑的流通方向不限定於本實施形態的內容，亦可定為使已脫氣稀釋劑自泵P2朝向泵P1流通。於此情形下，上述實施形態只要在泵P1與泵P2將各切換閥等的操作反轉即可。 In the above embodiment, the case where the degassed diluent is circulated from the pump P1 to the pump P2 is taken as an example, but the flow direction of the degassed diluent is not limited to the content of this embodiment, but may be determined as The degassed diluent flows from the pump P2 toward the pump P1. In this case, in the above embodiment, the operations of the respective switching valves and the like may be reversed in the pump P1 and the pump P2.

又，以上實施形態之中，反複進行液體通入濾器步驟與負壓維持步驟後，已由泵P2而將已脫氣稀釋劑供給至稀釋劑供給噴嘴151，但於進一步重複液體通 入濾器步驟與負壓維持步驟之情形下，已脫氣稀釋劑已以既定量貯存至泵P2的貯存室210後，更具體而言，例如藉由感測器321檢測出泵P1的貯存室210內的已脫氣稀釋劑已成空後，亦可藉由空氣***器225將泵P1的壓力室211排氣，並且一併使用調節器233的系統加壓泵P2的壓力室，藉以形成自泵P2朝向泵P1之已脫氣稀釋劑的流向。如上所述，因為能使用循環配管251而使已脫氣稀釋劑自由循環在泵P1與泵P2之間，所以能因應須要而以期望次數重複液體通入濾器步驟與負壓維持步驟。 Further, in the above embodiment, after the liquid-passing filter step and the negative pressure maintaining step are repeated, the deaerated diluent has been supplied to the diluent supply nozzle 151 by the pump P2, but the liquid-passing is further repeated. In the case of the filter introduction step and the negative pressure maintaining step, after the degassed diluent has been stored in the storage chamber 210 of the pump P2 in a predetermined amount, more specifically, for example, the storage chamber of the pump P1 is detected by the sensor 321 After the degassed diluent in 210 has been emptied, the pressure chamber 211 of the pump P1 can be exhausted through the air ejector 225, and the pressure chamber of the pump P2 is also pressurized by the system of the regulator 233, thereby The flow of degassed diluent from pump P2 towards pump P1 is formed. As described above, since the degassed diluent can be circulated freely between the pump P1 and the pump P2 by using the circulation pipe 251, the liquid-passing filter step and the negative pressure maintaining step can be repeated as many times as necessary.

此外，以上實施形態之中，以使用二台泵P1、P2之情形為例說明，但泵並非必須設置二台，只要係例如具有二以上之可自由切換正壓與負壓之獨立機構之泵，亦可僅設置一台泵。 In addition, in the above embodiment, the case of using two pumps P1 and P2 is taken as an example, but the pump does not have to be provided with two pumps, as long as it is, for example, a pump having two or more independent mechanisms that can freely switch between positive pressure and negative pressure. It is also possible to set only one pump.

然而，發明人進一步實驗後，發現：僅實施前述負壓維持步驟之情況下，依據配管的長度等，則到達所期望之減壓度例如-45kPa左右為止，須要相當程度例如約90秒的時間。如同公知，半導體元件的製造之中，產出量(throughput)之縮短極受到關注。於是，為了有效率減壓，以更短時間達成既定負壓，發明人提案如同下述之製程。 However, after further experiments by the inventors, it was found that, in the case where only the foregoing negative pressure maintaining step is performed, depending on the length of the piping, etc., it takes a considerable amount of time, such as about 90 seconds, to reach the desired pressure reduction degree, such as -45 kPa. . As is well known, in the manufacture of semiconductor devices, the reduction in throughput is of great concern. Therefore, in order to reduce the pressure efficiently and achieve a predetermined negative pressure in a shorter time, the inventor proposes a process similar to the following.

圖15顯示該情形下之各種閥、稀釋劑的液流。亦即，將排液閥266定為閉狀態，且將排液切換閥267及泵P2的切換閥253定為開狀態。藉此，在泵P2之系統之中，形成將稀釋劑供給管200、循環配管251、貯存室210加以連結之管道。另 一方面，在泵P1系統之中，將切換閥220定為開狀態，且將切換閥252、排出閥315定為閉狀態，形成將稀釋劑供給管200與泵P1的貯存室210加以連結之管道。 Figure 15 shows the flow of various valves and diluents in this case. That is, the drain valve 266 is set to a closed state, and the drain switching valve 267 and the switching valve 253 of the pump P2 are set to an open state. Thereby, in the system of the pump P2, a pipe connecting the diluent supply pipe 200, the circulation pipe 251, and the storage chamber 210 is formed. another On the one hand, in the pump P1 system, the switching valve 220 is set to the open state, and the switching valve 252 and the discharge valve 315 are set to the closed state, forming a connection between the diluent supply pipe 200 and the storage chamber 210 of the pump P1. pipeline.

而且，氣體供給源235系統將各切換閥240、241、242、243均定為閉狀態。另一方面，空氣***器225系統將切換閥230、231定為開狀態，且將切換閥229a定為閉狀態，將切換閥229b定為開狀態。 The gas supply source 235 system sets each of the switching valves 240, 241, 242, and 243 to a closed state. On the other hand, the air ejector 225 system sets the switching valves 230 and 231 to an open state, sets the switching valve 229a to a closed state, and sets the switching valve 229b to an open state.

於此狀態下驅動空氣***器225。藉此，將泵P1、P2的各活塞板304均往下方拉入，且泵P1、P2的各壓力室211均成為相等的負壓，泵P1、P2的各貯存室210亦成為同一負壓。因此，稀釋劑供給管200及循環配管251內亦成為負壓，若將濾器201視為壓力阻力，則以濾器201為分界，稀釋劑供給管200內的稀釋劑於上游側欲流往泵P1的貯存室210側、於下游側欲流往泵P2的貯存室210側。然而，如同上述，泵P1、P2的各貯存室210均成為同一負壓，因此稀釋劑供給管200及循環配管251內的稀釋劑不流動。 The air ejector 225 is driven in this state. Accordingly, the piston plates 304 of the pumps P1 and P2 are pulled downward, and the pressure chambers 211 of the pumps P1 and P2 become equal negative pressures, and the storage chambers 210 of the pumps P1 and P2 also become the same negative pressure. . Therefore, the diluent supply pipe 200 and the circulation pipe 251 also become negative pressure. If the filter 201 is regarded as pressure resistance, the filter 201 is used as a boundary, and the diluent in the diluent supply pipe 200 is intended to flow to the pump P1 on the upstream side. The storage chamber 210 is located on the downstream side of the storage chamber 210 on the downstream side, and is intended to flow to the storage chamber 210 side of the pump P2. However, as described above, since each of the storage chambers 210 of the pumps P1 and P2 becomes the same negative pressure, the diluent in the diluent supply pipe 200 and the circulation pipe 251 does not flow.

如同上述，由濾器201的上游側、下游側雙方向減壓而成為負壓，藉以使稀釋劑供給管200及循環配管251內的稀釋劑進行所謂自雙向之脫氣(雙向脫氣步驟)。因此，亦促進脫氣本身。於此情形，因為由雙向使其成為負壓，所以成為既定負壓為止的時間短於前述負壓維持步驟，亦即成為既定負壓為止的時間短於維持使稀釋劑供給管200及循環配管251內成為負壓狀態而直接停止泵P2所行之朝向濾器201之液體通入，並以一定時間保持該狀態之情形。 As described above, the pressure in the upstream and downstream sides of the filter 201 is reduced in both directions to become negative pressure, so that the diluent in the diluent supply pipe 200 and the circulation pipe 251 undergoes a so-called self-bidirectional degassing (bidirectional degassing step). Therefore, degassing itself is also promoted. In this case, since it becomes negative pressure in both directions, the time until it becomes the predetermined negative pressure is shorter than the aforementioned negative pressure maintaining step, that is, the time until it becomes the predetermined negative pressure is shorter than maintaining the diluent supply pipe 200 and the circulation pipe. 251 becomes a negative pressure state, and the liquid flow to the filter 201 by the pump P2 is stopped directly, and the state is maintained for a certain period of time.

圖16顯示針對該點實際實驗之結果，圖16的圖表顯示下者情形下，濾器201之上游側與下游側的配管內的壓力各者之隨著時間的變化：已實施前述負壓維持步驟的情形；以及已實施雙向脫氣步驟的情形；且同一圖表中，a係表示於實施80kPa之負壓維持步驟之情形下，濾器201的上游側的壓力變化、b係表示於實施80kPa之負壓維持步驟之情形下，濾器201的下游側的壓力變化、c係表示於實施20秒80kPa之負壓維持步驟後，實施80kPa之雙向脫氣步驟之情形之濾器201的上游側的壓力變化、d係表示於實施20秒80kPa之負壓維持步驟後，實施80kPa之雙向脫氣步驟之情形之濾器201的下游側的壓力變化。 FIG. 16 shows the results of actual experiments at this point. The graph in FIG. 16 shows the changes over time of the pressure in the piping of the upstream side and the downstream side of the filter 201 in the following case: the aforementioned negative pressure maintaining step has been performed. In the same graph, a represents the pressure change on the upstream side of the filter 201 when the negative pressure maintenance step of 80 kPa is performed, and b represents the negative pressure of 80 kPa. In the case of the pressure maintaining step, the pressure change on the downstream side of the filter 201, c represents the pressure change on the upstream side of the filter 201 when the two-way degassing step of 80 kPa is performed after the negative pressure maintaining step of 80 kPa is performed for 20 seconds. d indicates the pressure change on the downstream side of the filter 201 in the case where the two-way degassing step of 80 kPa is performed after the negative pressure maintaining step of 80 kPa is performed for 20 seconds.

由此結果可知，於實施負壓維持步驟之情形下，到達-45kPa為止須要約45秒，但於實施雙向脫氣步驟之情形下，能自開始以約0.5秒實現-80kPa。因此，可知遠較僅負壓維持步驟之情形，能以短時間實現更高的減壓度。藉此，能使稀釋劑供給管200及循環配管251內的稀釋劑中的氣泡以短時間顯現更多的氣泡。 From this result, it can be seen that it takes about 45 seconds to reach -45kPa in the case of implementing a negative pressure maintaining step, but -80kPa can be achieved in about 0.5 seconds from the start in the case of implementing a two-way degassing step. Therefore, it can be seen that a higher degree of pressure reduction can be achieved in a shorter time than in the case where only the negative pressure maintaining step is performed. Thereby, the bubbles in the diluent in the diluent supply pipe 200 and the circulation pipe 251 can be made more visible in a short time.

就實際製程而言，因為須要藉由已述之液體通入濾器步驟而去除濾器201的氣泡，所以亦可組合進行前述雙向脫氣步驟與液體通入濾器步驟。於此情形，就製程的順序而言可先實施任一者，但亦可最初使稀釋劑流通於濾器201，亦即亦可先實施液體通入濾器步驟，而後實施雙向脫氣步驟。 As far as the actual manufacturing process is concerned, it is necessary to remove the air bubbles of the filter 201 by the liquid passing through the filter step described above, so the aforementioned two-way degassing step and the liquid passing through the filter step can also be combined. In this case, any of the processes may be performed first, but the diluent may be initially circulated through the filter 201, that is, the liquid passing through the filter step may be performed first, and then the two-way degassing step may be performed.

當然亦可一併實施前述負壓維持步驟，但亦可取代負壓維持步驟而實施雙向脫氣步驟。又，亦可重複實施液體通入濾器步驟與雙向脫氣步驟。藉此可去除更多氣泡。 Of course, the foregoing negative pressure maintaining step may be performed together, but a two-way degassing step may be performed instead of the negative pressure maintaining step. In addition, the liquid-passing filter step and the two-way degassing step may be repeatedly performed. This will remove more air bubbles.

此外，於實施雙向脫氣步驟之情形下，將泵P1、P2的各貯存室210均定為同一負壓、使稀釋劑不會流動為最佳，但當稀釋劑流入至泵P1的貯存室210，則其後之排出繁瑣。因此於不易定為同一負壓之情形下、或定為同一負壓則耗費時間之情形下，若考慮稀釋劑流入P1的貯存室210之風險，則亦可將泵P2的貯存室210側的負壓定為稍微高(減壓度大)的狀態。 In addition, in the case of implementing a two-way degassing step, it is best to set each storage chamber 210 of the pumps P1 and P2 to the same negative pressure so that the diluent does not flow, but when the diluent flows into the storage chamber of the pump P1 210, the subsequent discharge is cumbersome. Therefore, if it is not easy to set the same negative pressure, or if it takes time to set the same negative pressure, if the risk of the diluent flowing into the storage chamber 210 of P1 is considered, the storage chamber 210 side of the pump P2 can also be The negative pressure is set to a slightly high state (large degree of decompression).

若考慮此事由，則為了使泵P1、P2的各貯存室210同等地成為負壓，先實施前述液體通入濾器步驟，而暫時僅使泵P2的貯存室210側成為負壓狀態，其後逐漸使泵P1系統的切換閥230成為開狀態較為實際，且由事先使稀釋劑流通於前述濾器201之觀點而言亦佳。 Taking this into consideration, in order to make the storage chambers 210 of the pumps P1 and P2 equally negative, the above-mentioned liquid-passing filter step is performed first, and only the storage chamber 210 side of the pump P2 is temporarily brought into a negative pressure state, and thereafter, It is practical to gradually change the switching valve 230 of the pump P1 system to the open state, and it is also preferable from the viewpoint of allowing the diluent to flow through the filter 201 in advance.

此外，如此進行而實施液體通入濾器步驟與雙向脫氣步驟，達成所期望之氣泡去除後，只要如圖17所示，將排出閥315定為開狀態，而將滯留在泵P2的貯存室210之混存有氣泡之稀釋劑排出至系統外即可。 In addition, the liquid inlet filter step and the two-way degassing step are performed in this manner, and after the desired bubble removal is achieved, as long as the discharge valve 315 is set to an open state as shown in FIG. 17, it is retained in the storage chamber of the pump P2 The diluent mixed with 210 bubbles can be discharged outside the system.

以上實施形態之中，以處理液係稀釋劑之情形為例說明，但使用何種液體作為處理液並不限定於本實施形態的內容，就處理液而言例如亦可使用光阻液或顯影液。 In the above embodiment, the case of the processing liquid-based diluent is taken as an example, but what kind of liquid is used as the processing liquid is not limited to the content of this embodiment. For the processing liquid, for example, a photoresist liquid or a developer may be used. liquid.

以上，已參照添加圖式說明本發明適宜的實施形態，但本發明不限定於該例。本發明所屬技術領域中具有通常知識者顯然能在申請專利範圍所記載之思想範疇內思及各種變更例或修正例，此等當然亦屬於本發明的技術性範圍。本發明不限於此例而能採用各種態樣。本發明亦可適用於基板係晶圓以外之FPD(平板顯示器)、光罩用遮罩/倍縮遮罩等其他基板之情形。 As mentioned above, although the suitable embodiment of this invention was demonstrated with reference to drawings, this invention is not limited to this example. Obviously, those with ordinary knowledge in the technical field to which the present invention pertains can contemplate various modifications or amendments within the scope of the ideology described in the scope of patent application, and these naturally also belong to the technical scope of the present invention. The present invention is not limited to this example, and various aspects can be adopted. The present invention is also applicable to other substrates such as FPD (Flat Panel Display) other than a substrate-based wafer, a mask for a photomask, and a reduction mask.

〔產業利用性〕 [Industrial availability]

本發明於將處理液塗布在基板上之際有用。 The present invention is useful when a processing liquid is applied to a substrate.

Claims (12)

一種處理液供給方法，將處理液供給至基板上，其特徵為包括：已脫氣處理液產生步驟，藉由脫氣機構將該處理液施以脫氣處理而產生已脫氣處理液；處理液貯存步驟，將該已脫氣處理液貯存至容器內；液體通入濾器步驟，使「經由處理液供給管而與該容器的下游側連接之濾器之下游側」相較於該容器內的壓力成為負壓，藉以將該容器內的該已脫氣處理液通入至該濾器；以及負壓維持步驟，於停止自該容器朝向該濾器之該處理液之供給後，以既定時間維持使該濾器的下游側成為負壓之狀態。A processing liquid supply method for supplying a processing liquid onto a substrate, which is characterized in that it includes a step of generating a degassed processing liquid, and the processing liquid is degassed by a degassing mechanism to generate a degassed processing liquid; The liquid storage step stores the degassed treatment liquid in a container; the liquid passes into the filter step, so that the "downstream side of the filter connected to the downstream side of the container through the processing liquid supply pipe" is compared with that in the container. The pressure becomes a negative pressure to pass the degassed treatment liquid in the container to the filter; and a negative pressure maintaining step of stopping the supply of the treatment liquid from the container to the filter for a predetermined period of time. The downstream side of this filter is in a state of negative pressure. 如申請專利範圍第1項記載之處理液供給方法，其中，反複進行該液體通入濾器步驟與該負壓維持步驟。The method for supplying a treatment liquid according to item 1 of the scope of the patent application, wherein the step of passing the liquid into the filter and the step of maintaining the negative pressure are repeated. 一種處理液供給方法，將處理液供給至基板上，其特徵為包括：已脫氣處理液產生步驟，藉由脫氣機構將該處理液施以脫氣處理而產生已脫氣處理液；處理液貯存步驟，將該已脫氣處理液貯存至容器內；液體通入濾器步驟，使「經由處理液供給管而與該容器的下游側連接之濾器之下游側」相較於該容器內的壓力成為負壓，藉以將該容器內的該已脫氣處理液通入至該濾器；以及雙向脫氣步驟，由該濾器的上游側與下游側減壓而將處理液脫氣。A processing liquid supply method for supplying a processing liquid onto a substrate, which is characterized in that it includes a step of generating a degassed processing liquid, and the processing liquid is degassed by a degassing mechanism to generate a degassed processing liquid; The liquid storage step stores the degassed treatment liquid in a container; the liquid passes into the filter step, so that the "downstream side of the filter connected to the downstream side of the container through the processing liquid supply pipe" is compared with that in the container. The pressure becomes negative pressure to pass the degassed treatment liquid in the container to the filter; and a two-way degassing step, which decompresses the treatment liquid by depressurizing the upstream side and the downstream side of the filter. 如申請專利範圍第3項記載之處理液供給方法，其中，反複進行該液體通入濾器步驟與該雙向脫氣步驟。The method for supplying a treatment liquid according to item 3 of the scope of the patent application, wherein the liquid-passing filter step and the two-way degassing step are repeated. 如申請專利範圍第1至4項中任一項記載之處理液供給方法，其中，更包括：處理液排出步驟，於該已脫氣處理液產生步驟之前，將該容器內所貯存之處理液排出至該容器外。The method for supplying a treatment liquid according to any one of claims 1 to 4, further comprising: a treatment liquid discharge step, and the treatment liquid stored in the container before the deaerated treatment liquid generation step. Drain out of the container. 如申請專利範圍第1至4項中任一項記載之處理液供給方法，其中，該液體通入濾器步驟之中，使與該處理液供給管中之該濾器的下游側連接之容積可變之貯存室的容積增大，藉以使該濾器的下游側成為負壓。The method for supplying a treatment liquid according to any one of claims 1 to 4, wherein the liquid is passed into the filter step so that a volume connected to a downstream side of the filter in the treatment liquid supply pipe is variable. The volume of the storage chamber is increased so that the downstream side of the filter becomes a negative pressure. 如申請專利範圍第6項記載之處理液供給方法，其中，該容器具備容積可變之其他貯存室，且該液體通入濾器步驟之中，伴隨著自該容器朝向該濾器之該已脫氣處理液的移動，而使該其他貯存室的容積減小。The method for supplying a treatment liquid according to item 6 of the scope of the patent application, wherein the container is provided with another storage chamber with a variable volume, and the liquid is passed into the filter step along with the degassed from the container toward the filter. The movement of the treatment liquid reduces the volume of the other storage chamber. 一種可讀取之電腦記憶媒體，其儲存有程式，該程式係在將處理液供給裝置加以控制之控制部的電腦上動作，俾藉由該處理液供給裝置而執行第1至7項任一項記載之處理液供給方法。A readable computer memory medium storing a program that operates on a computer of a control unit that controls a processing liquid supply device, and executes any of items 1 to 7 by the processing liquid supply device The method for supplying a processing liquid according to the item. 一種處理液供給裝置，自處理液供給源經由處理液供給管而將處理液供給至對於基板供給處理液之供給噴嘴，其特徵為包括：容器，暫時貯存由該處理液供給源供給之處理液，且設在該處理液供給管中之該供給噴嘴的上游側；脫氣機構，設在該處理液供給管中之該處理液供給源與該容器之間，將該處理液施以脫氣處理而產生已脫氣處理液；濾器，設在該處理液供給管中之該容器與該供給噴嘴之間；容積可變之貯存室，連接於自該處理液供給管中之該濾器與該供給噴嘴之間分歧之循環配管；以及控制部，調整該貯存室的容積，以使該貯存室的容積擴大，而令「該處理液供給管中之該濾器的下游側」相較於該容器內的壓力成為負壓，藉以將該容器內的該已脫氣處理液供給至該濾器，且於停止自該容器朝向該濾器之該處理液之供給後，以既定時間維持使該濾器的下游側成為負壓之狀態。A processing liquid supply device for supplying a processing liquid from a processing liquid supply source to a supply nozzle for supplying a processing liquid to a substrate through a processing liquid supply pipe, comprising a container for temporarily storing a processing liquid supplied from the processing liquid supply source And is provided on the upstream side of the supply nozzle in the processing liquid supply pipe; a degassing mechanism is provided between the processing liquid supply source and the container in the processing liquid supply pipe, and degassing the processing liquid A degassed treatment liquid is generated during processing; a filter is provided between the container and the supply nozzle in the treatment liquid supply pipe; a storage chamber with a variable volume is connected between the filter and the treatment liquid supply pipe; A circulation piping branched between supply nozzles; and a control unit that adjusts the volume of the storage chamber so that the volume of the storage chamber is enlarged so that "the downstream side of the filter in the processing liquid supply pipe" is compared with the container The internal pressure becomes a negative pressure, whereby the deaerated treatment liquid in the container is supplied to the filter, and after the supply of the treatment liquid from the container to the filter is stopped, it is maintained for a predetermined time. The downstream side of the filter into a state of negative pressure. 如申請專利範圍第9項記載之處理液供給裝置，其中，該容器具備容積可變之其他貯存室，且該控制部控制為：於使該貯存室的容積擴大，而將該容器內的該已脫氣處理液供給至該濾器之際，伴隨自該容器朝向該濾器之該已脫氣處理液的移動，使該其他貯存室的容積縮小。For example, the processing liquid supply device described in claim 9 of the patent application scope, wherein the container includes another storage chamber having a variable volume, and the control unit controls the volume of the storage chamber to be increased, and the When the deaerated treatment liquid is supplied to the filter, the volume of the other storage chamber is reduced as the deaerated treatment liquid moves from the container toward the filter. 一種處理液供給裝置，自處理液供給源經由處理液供給管而將處理液供給至對於基板供給處理液之供給噴嘴，其特徵為包括：容器，暫時貯存由該處理液供給源供給之處理液，且設在該處理液供給管中之該供給噴嘴的上游側；脫氣機構，設在該處理液供給管中之該處理液供給源與該容器之間，將該處理液施以脫氣處理而產生已脫氣處理液；濾器，設在該處理液供給管中之該容器與該供給噴嘴之間；容積可變之二個貯存室，連接於自該處理液供給管中之該濾器與該供給噴嘴之間分歧之循環配管；以及控制部，調整該二個貯存室的容積，用以使該二個貯存室中之一個貯存室的容積擴大，而使「該處理液供給管中之該濾器的下游側」相較於該容器內的壓力成為負壓，藉以將該容器內的該已脫氣處理液供給至該濾器，且於停止自該容器朝向該濾器之該處理液之供給後，由該濾器的上游側與下游側減壓而將處理液脫氣。A processing liquid supply device for supplying a processing liquid from a processing liquid supply source to a supply nozzle for supplying a processing liquid to a substrate through a processing liquid supply pipe, comprising a container for temporarily storing a processing liquid supplied from the processing liquid supply source And is provided on the upstream side of the supply nozzle in the processing liquid supply pipe; a degassing mechanism is provided between the processing liquid supply source and the container in the processing liquid supply pipe, and degassing the processing liquid A degassed treatment liquid is generated during processing; a filter is provided between the container in the treatment liquid supply pipe and the supply nozzle; two storage chambers with variable volumes are connected to the filter in the treatment liquid supply pipe A circulation piping branched from the supply nozzle; and a control unit that adjusts the volume of the two storage chambers so as to expand the volume of one of the two storage chambers so that "the processing liquid supply pipe The "downstream side of the filter" becomes a negative pressure compared to the pressure in the container, thereby supplying the degassed treatment liquid in the container to the filter, and stopping the processing from the container toward the filter. After the feeding, and the process was degassed under reduced pressure by the upstream and downstream sides of the filter. 如申請專利範圍第9至11項中任一項記載之處理液供給裝置，其中，該容器連接有：排出管，將該容器內所貯存之處理液或已脫氣處理液予以排出。According to the processing liquid supply device described in any one of claims 9 to 11, the container is connected to a discharge pipe, and the processing liquid or the deaerated processing liquid stored in the container is discharged.