TWI667802B - Optical sensor and the manufacturing method thereof - Google Patents
Optical sensor and the manufacturing method thereof Download PDFInfo
- Publication number
- TWI667802B TWI667802B TW107103976A TW107103976A TWI667802B TW I667802 B TWI667802 B TW I667802B TW 107103976 A TW107103976 A TW 107103976A TW 107103976 A TW107103976 A TW 107103976A TW I667802 B TWI667802 B TW I667802B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical sensor
- layer
- shielding layer
- light shielding
- image sensing
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
本發明實施例提供一種光學感測器，包括影像感測陣列、準直器層以及遮光層；影像感測陣列包括複數像素；準直器層設置在影像感測陣列上，包括對應像素之複數開口以及朝向影像感測陣列的第一面及與第一面相反之第二面；遮光層設置在開口之側壁。 An embodiment of the present invention provides an optical sensor, including an image sensing array, a collimator layer, and a light shielding layer; the image sensing array includes a plurality of pixels; and the collimator layer is disposed on the image sensing array, including a plurality of corresponding pixels The opening and the first surface facing the image sensing array and the second surface opposite to the first surface; the light shielding layer is disposed on the sidewall of the opening.
Description
本發明係關於一種光學感測器及其製造方法，且特別關於一種具有準直器的光學感測器及其製造方法。 The present invention relates to an optical sensor and a method of fabricating the same, and more particularly to an optical sensor having a collimator and a method of fabricating the same.
現今的行動電子裝置(例如手機、平板電腦、筆記型電腦等)通常配備有使用者辨識系統，用以保護個人資料安全。由於每個人的指紋皆不同，因此指紋感測器是一種常見並可靠的使用者辨識系統。 Today's mobile electronic devices (such as mobile phones, tablets, laptops, etc.) are often equipped with a user identification system to protect personal data. Since each person's fingerprints are different, the fingerprint sensor is a common and reliable user identification system.
市面上的指紋感測器常使用光學技術以感測使用者的指紋，這種基於光學技術的指紋感測器通常使用準直器(collimator)來使入射到感測器的光線平行前進。然而，目前所採用的準直器雖然大致符合需求，但是它們並非在所有方面都令人滿意。 Fingerprint sensors on the market often use optical techniques to sense the user's fingerprints. Such optical technology-based fingerprint sensors typically use a collimator to advance the light incident on the sensor in parallel. However, the collimators currently used are generally satisfactory, but they are not satisfactory in all respects.
本發明實施例提供一種光學感測器，包括影像感測陣列、準直器層以及遮光層；影像感測陣列包括複數像素；準直器層設置在影像感測陣列上，包括對應像素之複數開口以及朝向影像感測陣列的第一面及與第一面相反之第二面；遮光層設置在開口之側壁。 An embodiment of the present invention provides an optical sensor, including an image sensing array, a collimator layer, and a light shielding layer; the image sensing array includes a plurality of pixels; and the collimator layer is disposed on the image sensing array, including a plurality of corresponding pixels The opening and the first surface facing the image sensing array and the second surface opposite to the first surface; the light shielding layer is disposed on the sidewall of the opening.
本發明實施例亦提供一種製造光學感測器的方 法，包括：提供影像感測陣列，影像感測陣列包括像素；在影像感測陣列上形成準直器層，其中準直器層包括對應像素之開口；以及在開口之側壁設置遮光層。 Embodiments of the present invention also provide a method for manufacturing an optical sensor. The method includes: providing an image sensing array, the image sensing array includes pixels; forming a collimator layer on the image sensing array, wherein the collimator layer includes an opening of the corresponding pixel; and providing a light shielding layer on the sidewall of the opening.
本發明實施例另提供一種製造光學感測器的方法，包括：提供基板；在基板之正面形成凹槽；在凹槽之側壁及底部設置第一遮光層；將基板倒置接合至影像感測陣列，使凹槽朝向影像感測陣列之像素對應設置；以及從基板之背面薄化基板，直到去除凹槽之底部之第一遮光層。 The embodiment of the invention further provides a method for manufacturing an optical sensor, comprising: providing a substrate; forming a groove on a front surface of the substrate; providing a first light shielding layer on a sidewall and a bottom of the groove; and inverting the substrate to the image sensing array The groove is disposed corresponding to the pixels of the image sensing array; and the substrate is thinned from the back of the substrate until the first light shielding layer at the bottom of the groove is removed.
100‧‧‧光學感測裝置 100‧‧‧Optical sensing device
102‧‧‧目標 102‧‧‧ Target
104‧‧‧蓋板層 104‧‧‧ cover layer
104A‧‧‧上表面 104A‧‧‧Upper surface
106‧‧‧光學感測器 106‧‧‧ Optical Sensor
200、300、400、500、600、700、800、900、1000、1100‧‧‧光學感測器 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100‧‧‧ optical sensors
202、302、402、502、602、702、802、902、1002、1102‧‧‧準直器層 202, 302, 402, 502, 602, 702, 802, 902, 1002, 1102‧‧ ‧ collimator layer
204、304、404、504、604、704、804、904、1004、1104‧‧‧圖像感測陣列 204, 304, 404, 504, 604, 704, 804, 904, 1004, 1104‧‧‧ image sensing array
206、306、406、506、606、706、806、906、1006A‧‧‧遮光層 206, 306, 406, 506, 606, 706, 806, 906, 1006A‧‧ ‧ shading layer
208、308、408、508、608、708、808、908、1008、1108‧‧‧像素 208, 308, 408, 508, 608, 708, 808, 908, 1008, 1108‧ ‧ pixels
210、310、410、510、610、710、810、910、1010‧‧‧開口 210, 310, 410, 510, 610, 710, 810, 910, 1010‧‧‧ openings
212、212’、312、312’、412、412’‧‧‧光線 212, 212', 312, 312', 412, 412'‧‧‧ rays
814、1014‧‧‧透明材料 814, 1014‧‧‧ transparent materials
916、918‧‧‧濾光層 916, 918‧‧‧ filter layer
1006A‧‧‧底部遮光層 1006A‧‧‧ bottom shade layer
1006B‧‧‧遮光材料層 1006B‧‧‧Lighting material layer
1106A‧‧‧第一遮光層 1106A‧‧‧ first light shielding layer
1106B‧‧‧第二遮光層 1106B‧‧‧ second light shielding layer
1120‧‧‧基板 1120‧‧‧Substrate
1120A‧‧‧正面 1120A‧‧‧ positive
1120B‧‧‧背面 1120B‧‧‧Back
1122‧‧‧凹槽 1122‧‧‧ Groove
D‧‧‧直徑 D‧‧‧diameter
T‧‧‧厚度 T‧‧‧ thickness
以下將配合所附圖式詳述本發明之實施例。應注意的是，依據在業界的標準做法，各種特徵並未按照比例繪示且僅用以說明例示。事實上，可能任意地放大或縮小元件的尺寸，以清楚地表現出本發明的特徵。 Embodiments of the present invention will be described in detail below with reference to the drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not illustrated and are merely illustrative. In fact, the dimensions of the elements may be arbitrarily enlarged or reduced to clearly represent the features of the present invention.
第1圖係根據本發明一實施例繪示之光學感測裝置對目標成像的範例。 1 is an example of imaging an object by an optical sensing device according to an embodiment of the invention.
第2圖是一光學感測器的示意圖。 Figure 2 is a schematic illustration of an optical sensor.
第3圖是一光學感測器的示意圖。 Figure 3 is a schematic illustration of an optical sensor.
第4圖是根據本發明一實施例繪示之光學感測器的示意圖。 4 is a schematic diagram of an optical sensor according to an embodiment of the invention.
第5圖是根據本發明另一實施例繪示之光學感測器的示意圖。 FIG. 5 is a schematic diagram of an optical sensor according to another embodiment of the present invention.
第6圖是根據本發明又一實施例繪示之光學感測器的示意圖。 Figure 6 is a schematic diagram of an optical sensor according to another embodiment of the present invention.
第7圖是根據本發明又再一實施例繪示之光學感測器的示意圖。 Figure 7 is a schematic diagram of an optical sensor according to still another embodiment of the present invention.
第8圖是根據本發明另一實施例繪示之光學感測器的示意圖。 FIG. 8 is a schematic diagram of an optical sensor according to another embodiment of the present invention.
第9A、9B及9C圖是根據本發明又一實施例繪示之光學感測器的示意圖。 9A, 9B and 9C are schematic views of an optical sensor according to still another embodiment of the present invention.
第10A-10E圖為用以說明本發明一實施例之製造光學感測器的方法之一系列剖面圖。 10A-10E are a series of cross-sectional views illustrating a method of fabricating an optical sensor in accordance with an embodiment of the present invention.
第11A-11H圖為用以說明本發明另一實施例之製造光學感測器的方法之一系列剖面圖。 11A-11H are a series of cross-sectional views showing a method of manufacturing an optical sensor according to another embodiment of the present invention.
以下公開許多不同的實施方法或是例子來實行所提供之標的之不同特徵，以下描述具體的元件及其排列的實施例以闡述本發明。當然這些實施例僅用以例示，且不該以此限定本發明的範圍。舉例來說，在說明書中提到第一特徵形成於第二特徵之上，其包括第一特徵與第二特徵是直接接觸的實施例，另外也包括於第一特徵與第二特徵之間另外有其他特徵的實施例，亦即，第一特徵與第二特徵並非直接接觸。此外，在不同實施例中可能使用重複的標號或標示，這些重複僅為了簡單清楚地敘述本發明，不代表所討論的不同實施例及/或結構之間有特定的關係。 The various features of the subject matter set forth herein are set forth in the <RTIgt; These examples are for illustrative purposes only and are not intended to limit the scope of the invention. For example, it is mentioned in the specification that the first feature is formed on the second feature, which includes an embodiment in which the first feature is in direct contact with the second feature, and is additionally included between the first feature and the second feature. Embodiments having other features, i.e., the first feature is not in direct contact with the second feature. In addition, repeated reference numerals or signs may be used in the various embodiments, which are merely a simple and clear description of the present invention and do not represent a particular relationship between the various embodiments and/or structures discussed.
此外，其中可能用到與空間相關用詞，例如”上”、”下”、“下方”及類似的用詞，這些空間相關用詞係為了便於描述圖示中一個(些)元件或特徵與另一個(些)元件或特 徵之間的關係，這些空間相關用詞包括使用中或操作中的裝置之不同方位，以及圖式中所描述的方位。當裝置被轉向不同方位時(旋轉90度或其他方位)，則其中所使用的空間相關形容詞也將依轉向後的方位來解釋。 In addition, space-related terms such as "upper", "lower", "lower" and similar terms may be used, and such spatially related terms are used to facilitate the description of one or more of the elements or features in the illustration. Another component or special The relationship between the levies, these spatially related terms include the different orientations of the devices in use or operation, and the orientations described in the drawings. When the device is turned to a different orientation (rotated 90 degrees or other orientation), the spatially related adjectives used therein will also be interpreted in terms of the orientation after the turn.
根據一些實施例，第1圖繪示出光學感測裝置100對目標102(例如指紋)成像的範例。光學感測裝置100包括蓋板層104及在蓋板層104下的光學感測器106。蓋板層104保護光學感測裝置100的其他元件，如其下的光學感測器106。蓋板層104的材料可包括透明材料(例如玻璃或透明聚合物等)，以允許光線通過。當目標102接觸蓋板層104的上表面104A時，目標102將光源(未繪示)發出的光反射到光學感測器106上以讀取。目標102具有各種輪廓特徵，例如凸部與凹部(未繪示)。因此，當目標102接觸蓋板層104的上表面104A，目標102的凸部與蓋板層104的上表面104A接觸，而目標102的凹部不與蓋板層104的上表面104A接觸，亦即在102的凹部與蓋板層104的上表面104A間有一氣隙。因此，在目標102的凸部與凹部下方的像素所接受到的光線強度將會不同，從而可藉此對目標102的輪廓特徵進行識別。 1 illustrates an example of imaging of a target 102 (eg, a fingerprint) by optical sensing device 100, in accordance with some embodiments. The optical sensing device 100 includes a cover layer 104 and an optical sensor 106 under the cover layer 104. The cover layer 104 protects other components of the optical sensing device 100, such as the optical sensor 106 thereunder. The material of the cover layer 104 may include a transparent material (such as glass or a transparent polymer, etc.) to allow light to pass therethrough. When the target 102 contacts the upper surface 104A of the cover layer 104, the target 102 reflects light emitted by a light source (not shown) onto the optical sensor 106 for reading. The target 102 has various contour features, such as protrusions and recesses (not shown). Therefore, when the target 102 contacts the upper surface 104A of the cover layer 104, the convex portion of the target 102 is in contact with the upper surface 104A of the cover layer 104, and the concave portion of the target 102 is not in contact with the upper surface 104A of the cover layer 104, that is, There is an air gap between the recess of 102 and the upper surface 104A of the cover layer 104. Therefore, the intensity of the light received by the pixels below the convex and concave portions of the target 102 will be different, whereby the contour features of the target 102 can be identified.
請參閱第2圖，在一些實施例中，光學感測器200包括準直器層202、準直器層202下的圖像感測陣列204，其中準直器層202是設置為層狀的準直器。圖像感測陣列204另有複數個像素208與準直器層202中的開口210對應設置，使得入射光212可通過準直器層202的開口210入射到像素208上。 Referring to FIG. 2, in some embodiments, the optical sensor 200 includes a collimator layer 202, an image sensing array 204 under the collimator layer 202, wherein the collimator layer 202 is layered. Collimator. Image sensing array 204 has a plurality of pixels 208 disposed corresponding to openings 210 in collimator layer 202 such that incident light 212 can be incident on pixel 208 through opening 210 of collimator layer 202.
準直器層202係由有序排列且可吸收入射光的結 構所形成，在這些結構間具有開口210，用以僅允許垂直圖像感測陣列204的入射光212通過，而不垂直於垂直圖像感測陣列204的入射光會被大抵反射阻擋，進而降低抵達像素208上的散射光線，以窄化或聚焦入射光。因此，可改善像素208所感測到的圖像模糊的問題。 The collimator layer 202 is a sequence of ordered and absorbable incident light Formed with an opening 210 between these structures to allow only incident light 212 of the vertical image sensing array 204 to pass, while incident light that is not perpendicular to the vertical image sensing array 204 is blocked by large reflections, thereby The scattered light that reaches the pixel 208 is lowered to narrow or focus the incident light. Therefore, the problem of image blurring sensed by the pixels 208 can be improved.
然而，如第2圖所示，某些不垂直圖像感測陣列204的入射光212’會被開口210的側壁反射，從而抵達像素208(如虛線箭頭所示)。這種被開口210的側壁反射的非垂直圖像感測陣列204的入射光212’會造成圖像感測的誤差。此外，在製造此種光學感測器時，製程中的異物容易進入開口210中擋住像素208，從而使像素208無法有效地感測入射光。因此有必要對此種準直器層進行改良。 However, as shown in FIG. 2, incident light 212' of some of the non-vertical image sensing arrays 204 will be reflected by the sidewalls of the opening 210 to reach the pixel 208 (as indicated by the dashed arrow). Such incident light 212' of the non-vertical image sensing array 204 reflected by the sidewalls of the opening 210 can cause errors in image sensing. In addition, when such an optical sensor is manufactured, foreign matter in the process easily enters the opening 210 to block the pixel 208, so that the pixel 208 cannot effectively sense the incident light. Therefore, it is necessary to improve this kind of collimator layer.
請參閱第3圖，在一些實施例中，光學感測器300包括準直器層302、準直器層302下的圖像感測陣列304。圖像感測陣列304另有複數個像素308與準直器層302中的開口310對應設置。此外，準直器層302中更包括複數平行於圖像感測陣列304表面的遮光層306。 Referring to FIG. 3, in some embodiments, optical sensor 300 includes a collimator layer 302, an image sensing array 304 under collimator layer 302. The image sensing array 304 has a plurality of pixels 308 disposed corresponding to the openings 310 in the collimator layer 302. In addition, the collimator layer 302 further includes a plurality of light shielding layers 306 that are parallel to the surface of the image sensing array 304.
如第3圖所示，遮光層306可進一步阻擋不垂直像素308的入射光312’，以確保僅有垂直像素308的入射光312入射到像素308上。舉例來說，遮光層306可吸收入射到開口310中不垂直像素308的入射光312’，使其不會被開口310的側壁反射而抵達像素308上。然而，在準直器層302中設置多層的遮光層306需使用較複雜的製程。舉例來說，為了製成具有多層結構的準直器層302，需要使用多道沉積製程，從而增加製造成 本。此外，由於準直器層302與遮光層306材料的熱膨脹係數不同，因此當溫度變化時，準直器層302與遮光層306的熱膨脹程度會不同，故溫度改變時會導致光學感測器300翹曲，進而造成良率下降。因此，仍有必要對此種光學感測器進行進一步的改良。 As shown in FIG. 3, the light shielding layer 306 can further block incident light 312' of the non-vertical pixels 308 to ensure that only incident light 312 of the vertical pixels 308 is incident on the pixels 308. For example, the light-shielding layer 306 can absorb incident light 312' that is incident on the non-vertical pixels 308 in the opening 310 such that it is not reflected by the sidewalls of the opening 310 to reach the pixel 308. However, the provision of multiple layers of light shielding layer 306 in the collimator layer 302 requires a more complicated process. For example, in order to form the collimator layer 302 having a multi-layer structure, it is necessary to use a multi-pass deposition process to increase the manufacturing process. this. In addition, since the thermal expansion coefficients of the material of the collimator layer 302 and the light shielding layer 306 are different, the degree of thermal expansion of the collimator layer 302 and the light shielding layer 306 may be different when the temperature changes, so that the optical sensor 300 may be caused when the temperature changes. Warpage, which in turn causes a drop in yield. Therefore, it is still necessary to further improve this kind of optical sensor.
第4圖是根據本發明一實施例繪示之光學感測器400的示意圖。光學感測器400包括準直器層402、準直器層402下的圖像感測陣列404。圖像感測陣列404另有複數個像素408與準直器層402中的開口410對應設置。在一些實施例中，準直器層的厚度T介於1-500μm的範圍內，且開口410之直徑D為1-100μm。如第4圖所示，開口410的側壁上設置有遮光層406，以降低圖像感測的誤差。 FIG. 4 is a schematic diagram of an optical sensor 400 according to an embodiment of the invention. Optical sensor 400 includes a collimator layer 402, an image sensing array 404 under collimator layer 402. Image sensing array 404 has a plurality of pixels 408 disposed corresponding to openings 410 in collimator layer 402. In some embodiments, the thickness T of the collimator layer is in the range of 1-500 [mu]m and the diameter D of the opening 410 is 1-100 [mu]m. As shown in FIG. 4, a light shielding layer 406 is disposed on the sidewall of the opening 410 to reduce errors in image sensing.
在一些實施例中，遮光層406包括例如聚碳酸酯、聚對苯二甲酸乙二酯、聚醯亞胺、碳黑、無機絕緣或金屬材料、矽等或其組合，且遮光層406在200-1100nm波長範圍下之光吸收率大於99%。因此，當光線412及412’皆入射到開口410內時，不垂直像素408的光線412’會被遮光層406吸收，僅有垂直像素408的光線412可入射到像素408上。與第2圖的光學感測器200相比，光學感測器400在開口410的側壁上具有遮光層406，因而可吸收不垂直像素408的的入射光412’，進而可防止偵測圖像時的失真問題。與第3圖的遮光層306相比，僅需簡單的製程便可在開口410中設置遮光層406，因而可降低製造成本。再者，由於僅在準直器層402的表面而非內部設置遮光層406，因兩者之熱膨脹係數不同所導致的翹曲問題亦可得到改善。 In some embodiments, the light shielding layer 406 includes, for example, polycarbonate, polyethylene terephthalate, polyimide, carbon black, inorganic insulating or metallic materials, tantalum, or the like, or combinations thereof, and the light shielding layer 406 is at 200. The light absorption rate in the wavelength range of -1100 nm is greater than 99%. Therefore, when both of the rays 412 and 412' are incident into the opening 410, the light 412' of the non-vertical pixel 408 is absorbed by the light shielding layer 406, and only the light 412 of the vertical pixel 408 can be incident on the pixel 408. Compared with the optical sensor 200 of FIG. 2, the optical sensor 400 has a light shielding layer 406 on the sidewall of the opening 410, so that the incident light 412' of the non-vertical pixel 408 can be absorbed, thereby preventing detection of an image. The distortion problem at the time. Compared with the light shielding layer 306 of FIG. 3, the light shielding layer 406 can be disposed in the opening 410 only by a simple process, thereby reducing the manufacturing cost. Furthermore, since the light shielding layer 406 is provided only on the surface of the collimator layer 402 rather than inside, the warpage problem caused by the difference in thermal expansion coefficients of both can be improved.
第5圖是根據本發明另一實施例繪示之光學感測器500的示意圖。光學感測器500包括準直器層502、準直器層502下的圖像感測陣列504。圖像感測陣列504另有複數個像素508與準直器層502中的開口510對應設置。此外，在圖像感測陣列504的背面與準直器層502之間及在開口510的側壁上設置有遮光層506。 FIG. 5 is a schematic diagram of an optical sensor 500 according to another embodiment of the present invention. Optical sensor 500 includes a collimator layer 502, an image sensing array 504 under collimator layer 502. Image sensing array 504 has a plurality of pixels 508 disposed corresponding to openings 510 in collimator layer 502. Further, a light shielding layer 506 is disposed between the back surface of the image sensing array 504 and the collimator layer 502 and on the sidewall of the opening 510.
光學感測器500與第4圖的光學感測器400不同的是，遮光層506更設置在圖像感測陣列504及準直器層502之間。藉由此種配置方法，由於更設置了額外的遮光層506，可進一步吸收不想要的入射光，從而僅允許垂直於像素508的入射光入射到像素508上，進而防止感測圖像時失真的問題。 The optical sensor 500 is different from the optical sensor 400 of FIG. 4 in that the light shielding layer 506 is disposed between the image sensing array 504 and the collimator layer 502. With this configuration method, since an additional light shielding layer 506 is further provided, unwanted incident light can be further absorbed, thereby allowing only incident light perpendicular to the pixel 508 to be incident on the pixel 508, thereby preventing distortion when sensing an image. The problem.
第6圖是根據本發明又一實施例繪示之光學感測器600的示意圖。光學感測器600包括準直器層602、準直器層602下的圖像感測陣列604。圖像感測陣列604另有複數個像素608與準直器層602中的開口610對應設置。此外，開口610的側壁上與準直器層602上表面上設置有遮光層606。 FIG. 6 is a schematic diagram of an optical sensor 600 according to another embodiment of the present invention. Optical sensor 600 includes a collimator layer 602, an image sensing array 604 under collimator layer 602. Image sensing array 604 has a plurality of pixels 608 disposed corresponding to openings 610 in collimator layer 602. In addition, a light shielding layer 606 is disposed on the sidewall of the opening 610 and the upper surface of the collimator layer 602.
光學感測器600與第4圖的光學感測器400不同的是，遮光層606更設置在準直器層602的上表面上。藉由在準直器層602的上表面上設置額外的遮光層606，可進一步吸收不想要的入射光，而僅允許垂直於像素608的入射光入射到像素608上，以防止感測圖像時失真。 The optical sensor 600 is different from the optical sensor 400 of FIG. 4 in that the light shielding layer 606 is further disposed on the upper surface of the collimator layer 602. By providing an additional light shielding layer 606 on the upper surface of the collimator layer 602, unwanted incident light can be further absorbed, while only incident light perpendicular to the pixel 608 is allowed to be incident on the pixel 608 to prevent sensing images. Time distortion.
第7圖是根據本發明又再一實施例繪示之光學感測器700的示意圖。光學感測器700包括準直器層702、準直器層702下的圖像感測陣列704。圖像感測陣列704另有複數個像 素708與準直器層702中的開口710對應設置。此外，開口710的側壁上、準直器層702及圖像感測陣列704間與準直器層702的上表面上設置有遮光層706。 FIG. 7 is a schematic diagram of an optical sensor 700 according to still another embodiment of the present invention. Optical sensor 700 includes a collimator layer 702 and an image sensing array 704 under collimator layer 702. The image sensing array 704 has a plurality of images The element 708 is disposed corresponding to the opening 710 in the collimator layer 702. In addition, a light shielding layer 706 is disposed on the sidewall of the opening 710, between the collimator layer 702 and the image sensing array 704, and on the upper surface of the collimator layer 702.
光學感測器700與第4圖的光學感測器400不同的是，在剖面圖中遮光層706包圍準直器層702，如第7圖所示。藉由這種配置方法，可進一步吸收不想要的入射光，從而僅允許垂直於像素708的入射光入射到像素708上，以防止感測圖像時失真的問題。 The optical sensor 700 differs from the optical sensor 400 of FIG. 4 in that the light shielding layer 706 surrounds the collimator layer 702 in a cross-sectional view, as shown in FIG. With this configuration method, unwanted incident light can be further absorbed, thereby allowing only incident light perpendicular to the pixel 708 to be incident on the pixel 708 to prevent the problem of distortion when the image is sensed.
第8圖是根據本發明另一實施例繪示之光學感測器800的示意圖。光學感測器800包括準直器層802、準直器層802下的圖像感測陣列804。圖像感測陣列804另有複數個像素808與準直器層802中的開口810對應設置。除此之外，在開口810的側壁上設置有遮光層806，且在開口810中填充有透明材料814。透明材料814可包括玻璃或透明樹脂，例如聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)、壓克力樹酯、環氧樹酯等材料或其組合，且透明材料814在200-1100nm波長下之光穿透率係大於70%，從而允許入射光線穿過透明材料814而抵達像素808。藉由在開口810中填充透明材料814，可防止在製造光學感測器800時有異物進入開口810中，造成像素808被異物阻擋，從而失去感測入射光線的功能，因而可增加良率。 FIG. 8 is a schematic diagram of an optical sensor 800 according to another embodiment of the present invention. Optical sensor 800 includes a collimator layer 802, an image sensing array 804 under collimator layer 802. Image sensing array 804 has a plurality of pixels 808 disposed corresponding to openings 810 in collimator layer 802. In addition to this, a light shielding layer 806 is disposed on the sidewall of the opening 810, and the opening 810 is filled with a transparent material 814. The transparent material 814 may comprise glass or a transparent resin such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), acrylic resin, epoxy tree. A material such as an ester or a combination thereof, and the transparent material 814 has a light transmittance of greater than 70% at a wavelength of from 200 to 1100 nm, thereby allowing incident light to pass through the transparent material 814 to reach the pixel 808. By filling the opening 810 with the transparent material 814, foreign matter can be prevented from entering the opening 810 when the optical sensor 800 is manufactured, causing the pixel 808 to be blocked by foreign matter, thereby losing the function of sensing incident light, and thus the yield can be increased.
本發明實施例之光學感測器可更設置有濾光層，其用以過濾光源，使得僅有特定波長的光可通過，進而防止在感測圖像時來自其他波長光線的干擾，使得所得的影像更加清 晰。濾光層的材料可為光阻材料，並且可藉由各種不同的光阻材料，進而阻擋各種不同波段的光線射入。舉例來說，若入射光為可見光，則濾光層可為半透明層以允許足夠的光通過濾光層並到達像素上。如第9A圖所示，可將濾光層916設置在準直器層402的下表面下；或者亦可將濾光層918設置在準直器層402的上表面上，如第9B圖所示；也可在準直器層402的上表面及下表面同時設置濾光層916及918，如第9C圖所示，端看設計需求。此外，取決於設計需求，在第5-8圖之實施例中，亦可以相同的方式在準直器層的上表面或下表面上設置濾光層，進而達成相同或相似的效果。 The optical sensor of the embodiment of the present invention may further be provided with a filter layer for filtering the light source so that only light of a specific wavelength can pass, thereby preventing interference from other wavelengths of light when the image is sensed, so that the result The image is clearer Clear. The material of the filter layer can be a photoresist material, and can be blocked by various different light-shielding materials, thereby blocking light rays of different wavelength bands. For example, if the incident light is visible light, the filter layer can be a translucent layer to allow sufficient light to pass through the filter layer and onto the pixel. As shown in FIG. 9A, the filter layer 916 may be disposed under the lower surface of the collimator layer 402; or the filter layer 918 may be disposed on the upper surface of the collimator layer 402, as shown in FIG. 9B. The filter layers 916 and 918 may also be disposed on the upper surface and the lower surface of the collimator layer 402. As shown in FIG. 9C, the design requirements are viewed from the end. Further, depending on the design requirements, in the embodiment of Figs. 5-8, the filter layer may be provided on the upper surface or the lower surface of the collimator layer in the same manner, thereby achieving the same or similar effects.
在第4圖到第9圖的實施例中，上述遮光層的層數雖然繪示為一層，但本發明並非以此為限。舉例來說，在上述實施例中可視設計上的需求包括一層以上相同或不同材料的遮光層(如2-5層)，進而可達到更好的遮光效果。 In the embodiments of FIGS. 4 to 9, the number of layers of the light shielding layer is illustrated as one layer, but the invention is not limited thereto. For example, in the above embodiments, the visual design requirements include more than one layer of the same or different materials of the light shielding layer (such as 2-5 layers), thereby achieving a better shading effect.
第10A-10E圖為一系列剖面圖，用以說明本發明一實施例之製造光學感測器1000的方法。在第10A圖中，提供一圖像感測陣列1004，在其上具有間隔設置的複數像素1008。隨後，在像素1008之間設置底部遮光層1006A，但並未設置在像素1008上。 10A-10E are a series of cross-sectional views illustrating a method of fabricating optical sensor 1000 in accordance with an embodiment of the present invention. In FIG. 10A, an image sensing array 1004 is provided having a plurality of spaced apart pixels 1008 thereon. Subsequently, a bottom light shielding layer 1006A is disposed between the pixels 1008, but is not disposed on the pixel 1008.
設置底部遮光層1006A的方法包括在圖像感測陣列1004上利用如化學氣相沉積、物理氣相沉積或旋轉塗佈等製程沉積一遮光材料。隨後，再以微影與蝕刻製程以圖案化像素上的遮光材料，使得底部遮光層1006A僅位在像素1008間，而不是位在像素1008上。上述蝕刻製程例如反應離子蝕刻 (reactive ion etch，RIE)、中性束蝕刻(neutral beam etch，NBE)等或其組合，且上述蝕刻製程可以是非等向性的(anisotropic)。上述遮光材料可使用例如與遮光層406相同的材料。 The method of providing the bottom light-shielding layer 1006A includes depositing a light-shielding material on the image sensing array 1004 using processes such as chemical vapor deposition, physical vapor deposition, or spin coating. Subsequently, the lithography and etching processes are used to pattern the light-shielding material on the pixels such that the bottom light-shielding layer 1006A is only located between the pixels 1008, rather than being located on the pixels 1008. The above etching process such as reactive ion etching Reactive ion etch (RIE), neutral beam etch (NBE), or the like, or a combination thereof, and the etching process described above may be anisotropic. As the light shielding material, for example, the same material as the light shielding layer 406 can be used.
在第10B圖中，在圖像感測陣列1004上沉積準直器層的材料(例如矽或金屬材料(例如銅、鎳或金屬合金等))，並且藉由微影及蝕刻製程在對應像素1008處形成開口1010，從而形成準直器層1002。 In FIG. 10B, a material of the collimator layer (eg, germanium or a metal material (eg, copper, nickel, or metal alloy, etc.) is deposited on the image sensing array 1004, and the corresponding pixel is formed by a lithography and etching process. An opening 1010 is formed at 1008 to form a collimator layer 1002.
在第10C圖中，在準直器層1002及圖像感測陣列1004上順應性地沉積一遮光材料1006B，其覆蓋準直器層1002、像素1008及開口1010的側壁。遮光材料1006B的材料及製程可與沉積底部遮光層1006A相似或相同。 In FIG. 10C, a light-shielding material 1006B is deposited conformally over the collimator layer 1002 and the image sensing array 1004, which covers the collimator layer 1002, the pixels 1008, and the sidewalls of the opening 1010. The material and process of the light-shielding material 1006B can be similar or identical to the deposition of the bottom light-shielding layer 1006A.
在第10D圖中，藉由回蝕刻製程去除在準直器層1002上表面上及像素1008上的遮光材料1006B，僅留下在側壁上的遮光材料1006B。上述回蝕刻製程例如可為氣體團簇離子束製程(Gas cluster ion beam process)等適合的回蝕刻製程。在回蝕刻製程之後，底部遮光層1006A及遮光材料1006B共同構成一遮光層1006。 In FIG. 10D, the light-shielding material 1006B on the upper surface of the collimator layer 1002 and on the pixel 1008 is removed by an etch-back process, leaving only the light-shielding material 1006B on the sidewalls. The above etch back process may be, for example, a suitable etch back process such as a gas cluster ion beam process. After the etch back process, the bottom light shielding layer 1006A and the light shielding material 1006B together form a light shielding layer 1006.
在第10E圖中，在開口1010中藉由合適的沉積製程填充入透明材料1014，從而形成光學感測器1000。藉由在開口1010中填充透明材料1014，可防止在隨後的製程中任何異物進入開口1010中，進而防止像素1008被異物阻擋而無法有效地感測光線。透明材料1014的材料可與透明材料814相同，於此不再贅述。 In FIG. 10E, the transparent material 1014 is filled in the opening 1010 by a suitable deposition process, thereby forming the optical sensor 1000. By filling the opening 1010 with the transparent material 1014, it is possible to prevent any foreign matter from entering the opening 1010 in the subsequent process, thereby preventing the pixel 1008 from being blocked by the foreign matter and unable to effectively sense the light. The material of the transparent material 1014 can be the same as the transparent material 814, and details are not described herein again.
應注意的是，上述步驟僅為示例性的，而非用於限制本發明。可更改、省略或增加上述步驟。舉例來說，可省略第10E圖的步驟，且在第10A圖中不設置底部遮光層1006A，從而可得到如同第4圖的光學感測器400的結構。 It should be noted that the above steps are merely exemplary and are not intended to limit the invention. The above steps can be changed, omitted or added. For example, the step of FIG. 10E may be omitted, and the bottom light shielding layer 1006A is not provided in FIG. 10A, so that the structure of the optical sensor 400 like FIG. 4 can be obtained.
第11A-11H圖為一系列剖面圖，用以說明本發明另一實施例之製造光學感測器1100的方法。在第11A圖中，提供基板1120。基板1120在後續製程中係作為準直器層，且基板1120的材料可包括例如矽、金屬材料及其他非金屬材料，且基板包括正面1120A及背面1120B。在第11B圖中，在基板1120的正面1120A上藉由微影與蝕刻製程以形成複數凹槽1122。在第11C圖中，在基板1120的正面1120A上及凹槽1122中沉積形成第一遮光層1106A。第一遮光層1106A的材料和沉積方法可與遮光層406相同。 11A-11H are a series of cross-sectional views for explaining a method of manufacturing the optical sensor 1100 according to another embodiment of the present invention. In FIG. 11A, a substrate 1120 is provided. The substrate 1120 serves as a collimator layer in a subsequent process, and the material of the substrate 1120 may include, for example, germanium, a metal material, and other non-metal materials, and the substrate includes a front surface 1120A and a back surface 1120B. In FIG. 11B, a plurality of grooves 1122 are formed by a lithography and etching process on the front surface 1120A of the substrate 1120. In FIG. 11C, a first light shielding layer 1106A is deposited on the front surface 1120A of the substrate 1120 and in the recess 1122. The material and deposition method of the first light shielding layer 1106A may be the same as the light shielding layer 406.
在第11D圖中，在凹槽1122中填充透明材料1114。在第11E圖中，平坦化基板1120，使得在基板1120表面的第一遮光層1106A被去除，且使得基板1120與透明材料共同具有一平坦頂面。上述平坦化操作可以包括化學機械拋光及/或回蝕刻製程。透明材料1114的材料可與透明材料814相同，於此不再贅述。 In the 11D image, the recess 1122 is filled with a transparent material 1114. In FIG. 11E, the substrate 1120 is planarized such that the first light shielding layer 1106A on the surface of the substrate 1120 is removed, and the substrate 1120 and the transparent material have a flat top surface in common. The planarization operation described above may include a chemical mechanical polishing and/or etch back process. The material of the transparent material 1114 can be the same as the transparent material 814, and details are not described herein again.
在第11F圖中，將基板1120倒置接合到影像感測陣列1104上。其中影像感測陣列1104上具有複數對應透明材料1114位置所設置的像素1108。在第11G圖中，從基板1120的背面1120B平坦化基板1120，直到露出透明材料1114。平坦化基板1120的方法可與第11E圖之平坦化方法相同。平坦化後的基 板1120作為準直器層1102。因此，形成了光學感測器1000。 In FIG. 11F, the substrate 1120 is flip-bonded onto the image sensing array 1104. The image sensing array 1104 has a plurality of pixels 1108 disposed corresponding to the position of the transparent material 1114. In FIG. 11G, the substrate 1120 is planarized from the back surface 1120B of the substrate 1120 until the transparent material 1114 is exposed. The method of planarizing the substrate 1120 can be the same as the planarization method of FIG. 11E. Flattened base Plate 1120 acts as a collimator layer 1102. Thus, the optical sensor 1000 is formed.
應注意的是，上述步驟僅為示例性的，而非用於限制本發明。可更改、省略或增加上述步驟。舉例來說，如第11H圖所示，可在基板1120的背面1120B設置第二遮光層1106B，以進一步阻擋來自外界的光線，進而防止不垂直像素1108的光線到達像素1108上。 It should be noted that the above steps are merely exemplary and are not intended to limit the invention. The above steps can be changed, omitted or added. For example, as shown in FIG. 11H, a second light shielding layer 1106B may be disposed on the back surface 1120B of the substrate 1120 to further block light from the outside, thereby preventing light of the non-vertical pixels 1108 from reaching the pixel 1108.
綜上所述，本發明提供一種具有準直器的光學感測器，在準直器上具有可吸收特定波長光線的遮光層。若入射光不垂直準直器，則其會被準直器阻擋或被遮光層吸收。因此，可確保入射到光學感測器中的像素的光線皆是垂直的，可防止像素因接收到不垂直的入射光而造成影像模糊的問題。此外，本發明使用簡單方式設置遮光層，可減少製程所需時間，達到降低成本的目的。再者，本發明藉由在準直器的開口中設置透明材料，可防止製造時的灰塵碎屑等進入上述開口中。 In summary, the present invention provides an optical sensor having a collimator having a light shielding layer that absorbs light of a specific wavelength on the collimator. If the incident light is not perpendicular to the collimator, it will be blocked by the collimator or absorbed by the opacifying layer. Therefore, it is ensured that the light incident on the pixels in the optical sensor is vertical, which prevents the pixel from being blurred due to the reception of non-perpendicular incident light. In addition, the present invention uses a simple manner to set the light shielding layer, which can reduce the time required for the process and achieve the purpose of reducing the cost. Furthermore, in the present invention, by providing a transparent material in the opening of the collimator, it is possible to prevent dust debris or the like from being introduced into the opening.
上述內容概述許多實施例的特徵，因此任何所屬技術領域中具有通常知識者，可更加理解本發明之各面向。任何所屬技術領域中具有通常知識者，可能無困難地以本發明為基礎，設計或修改其他製程及結構，以達到與本發明實施例相同的目的及/或得到相同的優點。任何所屬技術領域中具有通常知識者也應了解，在不脫離本發明之精神和範圍內做不同改變、代替及修改，如此等效的創造並沒有超出本發明的精神及範圍。 The above summary is a summary of the features of the various embodiments, and thus, those of ordinary skill in the art can be understood. Other processes and structures may be designed or modified on the basis of the present invention without departing from the scope of the present invention to achieve the same objectives and/or the same advantages as the embodiments of the present invention. It is to be understood by those of ordinary skill in the art that the invention may be practiced without departing from the spirit and scope of the invention.
Claims (17)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107103976A TWI667802B (en) | 2018-02-05 | 2018-02-05 | Optical sensor and the manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107103976A TWI667802B (en) | 2018-02-05 | 2018-02-05 | Optical sensor and the manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI667802B true TWI667802B (en) | 2019-08-01 |
| TW201935703A TW201935703A (en) | 2019-09-01 |
Family
ID=68316413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107103976A TWI667802B (en) | 2018-02-05 | 2018-02-05 | Optical sensor and the manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI667802B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112699866A (en) * | 2019-10-22 | 2021-04-23 | 世界先进积体电路股份有限公司 | Semiconductor device and method of forming the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN212229655U (en) * | 2020-01-16 | 2020-12-25 | 神盾股份有限公司 | Fingerprint sensing module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020043633A1 (en) * | 1999-11-24 | 2002-04-18 | Xerox Corporation | Method and apparatus for collimating light for detection |
| US20160254312A1 (en) * | 2015-02-02 | 2016-09-01 | Synaptics Incorporated | Image sensor structures for fingerprint sensing |
| CN107368822A (en) * | 2017-08-18 | 2017-11-21 | 上海天马微电子有限公司 | Display device, manufacturing method thereof and electronic equipment |
| TWM553015U (en) * | 2016-12-23 | 2017-12-11 | 創智能科技股份有限公司 | Biological feature identification device |
-
2018
- 2018-02-05 TW TW107103976A patent/TWI667802B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020043633A1 (en) * | 1999-11-24 | 2002-04-18 | Xerox Corporation | Method and apparatus for collimating light for detection |
| US20160254312A1 (en) * | 2015-02-02 | 2016-09-01 | Synaptics Incorporated | Image sensor structures for fingerprint sensing |
| TWM553015U (en) * | 2016-12-23 | 2017-12-11 | 創智能科技股份有限公司 | Biological feature identification device |
| CN107368822A (en) * | 2017-08-18 | 2017-11-21 | 上海天马微电子有限公司 | Display device, manufacturing method thereof and electronic equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112699866A (en) * | 2019-10-22 | 2021-04-23 | 世界先进积体电路股份有限公司 | Semiconductor device and method of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201935703A (en) | 2019-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10699092B2 (en) | Optical sensor and manufacturing method thereof | |
| CN110164882B (en) | Optical sensor and method for manufacturing the same | |
| CN211045441U (en) | Optical sensing system | |
| CN212569823U (en) | Optical sensor system, and image recognition apparatus and electronic apparatus including the same | |
| CN108292361B (en) | Display integrated optical fingerprint sensor with angle limiting reflector | |
| US20200234026A1 (en) | Fingerprint identification apparatus and electronic device | |
| CN111095282B (en) | Fingerprint detection device and electronic equipment | |
| US9880391B2 (en) | Lens array modules and wafer-level techniques for fabricating the same | |
| KR20220054387A (en) | Integrated optical sensor and manufacturing method thereof | |
| WO2017202323A1 (en) | Photosensitive image element, image collector, fingerprint collection device, and display device | |
| TWI652837B (en) | Sensing device | |
| CN111448652B (en) | Display capable of detecting fingerprint | |
| CN110472618A (en) | Shield the sensor module of lower finger print identifying and shields lower fingerprint certification device | |
| TW202010140A (en) | Optical sensor, optical sensing system and method for manufacturing the same | |
| CN110945527B (en) | Fingerprint identification device and electronic equipment | |
| CN111881873B (en) | Fingerprint identification device and electronic equipment | |
| TW202205654A (en) | Imaging device and electronic apparatus | |
| US10096635B2 (en) | Semiconductor structure and manufacturing method thereof | |
| TWI667802B (en) | Optical sensor and the manufacturing method thereof | |
| TW202129360A (en) | Collimator for under-display optical fingerprint sensing | |
| CN111095278B (en) | Fingerprint identification device and electronic equipment | |
| JP3044734B2 (en) | Solid-state imaging device | |
| CN213659463U (en) | Fingerprint identification device and electronic equipment | |
| CN210691343U (en) | Biometric imaging device and electronic device | |
| KR20100067982A (en) | Image sensor and method for fabricating the same |