TWI667367B - Mixer and vacuum treatment apparatus - Google Patents
Mixer and vacuum treatment apparatus Download PDFInfo
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- TWI667367B TWI667367B TW105132444A TW105132444A TWI667367B TW I667367 B TWI667367 B TW I667367B TW 105132444 A TW105132444 A TW 105132444A TW 105132444 A TW105132444 A TW 105132444A TW I667367 B TWI667367 B TW I667367B
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- 238000009489 vacuum treatment Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 369
- 238000002156 mixing Methods 0.000 claims abstract description 161
- 238000012545 processing Methods 0.000 claims abstract description 42
- 230000002093 peripheral effect Effects 0.000 claims description 35
- 239000002994 raw material Substances 0.000 claims description 33
- 239000000126 substance Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 14
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000000859 sublimation Methods 0.000 claims description 8
- 230000008022 sublimation Effects 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 67
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 61
- 230000000052 comparative effect Effects 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 21
- 238000011156 evaluation Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 241000973497 Siphonognathus argyrophanes Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/50—Mixing receptacles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical Vapour Deposition (AREA)
- Seeds, Soups, And Other Foods (AREA)
Abstract
本發明係提供一種可均一地混合第一氣體與第二氣體之混合器，以及使用該混合器之真空處理裝置。 The present invention provides a mixer capable of uniformly mixing a first gas and a second gas, and a vacuum processing apparatus using the same.
以使第二筒開口(46)位於第一筒本體(11)中之方式，將第二筒本體(12)相互非接觸地配置在第一筒本體(11)的內部，於第一筒本體(11)內部的第一筒開口(45)與第二筒開口(46)之間形成助跑空間(48)，使第二氣體從第二筒開口(46)流出至助跑空間(48)，並使第一氣體從形成於第一、第二筒本體(11、12)之間之間隙(47)流出至助跑空間(48)，在第二氣體由第一氣體所包圍之狀態下，使第一、第二氣體往助跑空間(48)流動，並從第一筒開口(45)流出至混合容器(10)內。第一、第二氣體直行於混合容器(10)內，並碰撞於混合容器(10)之面對第一筒開口(45)的壁面，形成第一、第二氣體的渦流，即使供給至混合容器(10)之第一、第二氣體的流量相差較大，亦可均一地混合。 The second tube body (12) is arranged inside the first tube body (11) in a non-contact manner with each other so that the second tube opening (46) is located in the first tube body (11). (11) A run-up space (48) is formed between the first tube opening (45) and the second tube opening (46) inside, so that the second gas flows out from the second tube opening (46) to the run-up space (48), and The first gas is caused to flow out from the gap (47) formed between the first and second cylinder bodies (11, 12) to the run-up space (48), and the first gas is made to be in a state where the second gas is surrounded by the first gas. First, the second gas flows into the run-up space (48), and flows out from the first cylinder opening (45) into the mixing container (10). The first and second gases go straight in the mixing container (10) and collide with the wall surface of the mixing container (10) facing the first cylinder opening (45), forming a vortex of the first and second gases, even if they are supplied to the mixing The flow rates of the first and second gases in the container (10) are quite different, and they can be mixed uniformly.
Description
本發明係關於氣體的混合器，以及使用該混合器之真空處理裝置之技術領域。 The present invention relates to the technical field of a gas mixer and a vacuum processing apparatus using the same.
為了混合不同種類的氣體，係使於兩條配管中流動之不同種類的氣體合流，並於具有彎曲部之一條配管內流動，當兩種氣體於彎曲部中流動時，藉由在彎曲部所產生之渦流來混合兩種氣體。 In order to mix different kinds of gases, different kinds of gases flowing in two pipes are merged and flowed in one pipe having a bent portion. When two kinds of gases flow in the bent portion, the gas flows through the bent portion. A vortex is generated to mix the two gases.
此混合方法，雖然形狀單純且能夠以低成本來達成，但在彎曲部所產生之壓力損耗大。 Although this mixing method has a simple shape and can be realized at low cost, the pressure loss generated in the bent portion is large.
尤其在兩種氣體中，一方之氣體源的壓力高，另一方之氣體源的壓力低時，由於壓力損耗，使從低壓力的氣體源所供給之氣體的量減少，而使氣體流量比從期望值中偏離。 In particular, when the pressure of one of the two gas sources is high and the pressure of the other gas source is low, the amount of gas supplied from the low-pressure gas source is reduced due to pressure loss, and the gas flow rate is lower than Deviations in expectations.
尤其當一方的氣體於常溫常壓下為氣體，且該氣體的氣體源為高壓罐，另一方的氣體為加熱固體或液體的原料物質使其昇華或蒸發所產生之氣體的原料物質， 並且使兩種氣體反應而形成薄膜時，氣體之原料物質的供給量降低時，薄膜的成長速度降低。 Especially when one gas is a gas at normal temperature and normal pressure, and the gas source of the gas is a high-pressure tank, and the other gas is a raw material substance that heats a solid or liquid raw material substance to cause sublimation or evaporation, When two gases are reacted to form a thin film, the growth rate of the thin film is reduced when the supply amount of the gaseous raw material substance is reduced.
係有一種使用長方體的容器作為混合容器，將不同種類的氣體所流動之配管連接於混合容器，並藉由在混合容器內所產生之渦流來混合兩種氣體，且以一條配管取出混合氣體之方法，此係具有壓力損耗小之優點。 There is a container using a rectangular parallelepiped as a mixing container. The pipes through which different kinds of gases flow are connected to the mixing container, and the two gases are mixed by the vortex generated in the mixing container, and the mixed gas is taken out by a pipe. Method, this system has the advantage of small pressure loss.
然而，因配管連接於混合容器之位置的不同，混合的程度會受影響，而有兩種氣體未均一地混合之問題。尤其將流量大幅不同之兩種氣體導入於混合容器內時，於混合容器內部，兩種氣體位於不同位置，在以所得之混合氣體來形成薄膜時，只能得到膜厚分布差之薄膜。 However, depending on the position of the piping connected to the mixing container, the degree of mixing is affected, and there is a problem that the two gases are not uniformly mixed. In particular, when two kinds of gases with greatly different flow rates are introduced into the mixing container, the two kinds of gases are located at different positions inside the mixing container. When a thin film is formed from the obtained mixed gas, only a thin film with a poor film thickness distribution can be obtained.
尤其，近年來作為半導體元件所使用之SiO2膜的材料，係廣泛使用以TEOS為原料之電漿CVD方法，TEOS氣體與氧氣在混合容器地內部混合後被電漿化。 In particular, in recent years, as a material of a SiO 2 film used for a semiconductor device, a plasma CVD method using TEOS as a raw material has been widely used. TEOS gas and oxygen are mixed in a mixing container to be plasmatized.
在使TEOS等之常溫下為液體之物質氣體化並進行氣體輸送時，該氣體壓力，是由該物質所具有之蒸氣壓與溫度來決定。 When a substance that is liquid at normal temperature, such as TEOS, is vaporized and gas is transported, the gas pressure is determined by the vapor pressure and temperature of the substance.
在進行氣體輸送時，於蒸發場所(或昇華場所)中之原料氣體的壓力高者，對於裝置設計上較為理想，但在將裝置的溫度保持為一定以上者，對於裝置構成上較為困難。因此，常溫下為液體或固體之物質的蒸氣壓，亦即所輸送之原料氣體的壓力仍存在著上限。 When the gas is conveyed, the pressure of the raw material gas in the evaporation place (or the sublimation place) is high, which is ideal for the design of the device, but it is difficult for the device configuration to keep the temperature of the device above a certain level. Therefore, there is still an upper limit to the vapor pressure of a liquid or solid substance at normal temperature, that is, the pressure of the raw material gas being conveyed.
一般而言，液體之TEOS的蒸氣壓，由於難 以確保為2600Pa以上之值，所以TEOS氣體之生成場所的壓力與混合容器內的壓力之間的差壓變小，如此雖可簡單地增加高壓充填於氣體高壓罐之氧氣的流量，但卻難以增加TEOS氣體的流量。 Generally speaking, the vapor pressure of TEOS in liquid is difficult In order to ensure a value of 2600Pa or more, the differential pressure between the pressure at the place where the TEOS gas is generated and the pressure in the mixing container becomes small. Although this can simply increase the flow rate of oxygen filled in the high-pressure gas tank, it is difficult Increase TEOS gas flow.
使用混合容器之先前技術，係記載於下述文獻中。 The prior art using a mixing container is described in the following documents.
[專利文獻1]日本特開平10-150030號公報 [Patent Document 1] Japanese Unexamined Patent Publication No. 10-150030
[專利文獻2]日本特開2001-335941號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2001-335941
本發明係為了解決上述先前技術的缺失而創作出，該目的在於提供一種可均一地混合兩種氣體之混合器，以及使用該混合器之真空處理裝置。 The present invention was created in order to solve the above-mentioned shortcomings of the prior art, and the object is to provide a mixer capable of uniformly mixing two gases, and a vacuum processing apparatus using the same.
為了解決上述問題，本發明為一種混合器，其特徵為具有：內部的空間與外部的環境氣體分離之混合容器、及使導入於根基側之第一氣體從前端側的第一筒開口流出之筒形狀的第一筒本體、及使導入於根基側之第二氣體從前端側的第二筒開口流出之筒形狀的第二筒本體、以及設置在前述混合容器的壁之流出口；前述第一筒開 口，是從前述第一筒開口所面對之前述混合容器的壁面開離地配置在前述混合容器的內部，前述第二筒本體的至少一部分，是在前述第二筒本體的外周側面與前述第一筒本體的內周側面處於非接觸之狀態下，被配置在前述第一筒本體的內部，使前述第一氣體於前述第一筒本體的內周側面與前述第二筒本體的外周側面之間的間隙中流動，前述第二筒開口，配置在前述第一筒本體的內部，前述第一筒開口，是配置在較前述第二筒開口離前述第一筒開口所面對之前述混合容器的壁面更近之位置，前述第一、第二氣體，是從前述第一筒開口釋出至前述混合容器的內部並在前述混合容器的內部混合，前述第一、第二氣體混合所生成之混合氣體，是從前述流出口流出至前述混合容器的外部。 In order to solve the above-mentioned problems, the present invention is a mixer, which is characterized by a mixing container having an internal space separated from an external ambient gas, and a first gas introduced from a root side to flow out from a first tube opening on a front side. A first cylindrical body with a cylindrical shape, a second cylindrical body with a cylindrical shape that allows the second gas introduced into the root side to flow out from the second cylindrical opening at the front end side, and a flow outlet provided on the wall of the mixing container; Open The mouth is disposed inside the mixing container away from the wall surface of the mixing container facing the opening of the first tube, and at least a part of the second tube body is on an outer peripheral side of the second tube body and the The inner peripheral side surface of the first cylinder body is placed in a non-contact state inside the first cylinder body so that the first gas is on the inner peripheral side surface of the first cylinder body and the outer peripheral side surface of the second cylinder body. The second tube opening is disposed inside the first tube body, and the first tube opening is disposed in the mixture facing the first tube opening from the second tube opening. Closer to the wall of the container, the first and second gases are released from the opening of the first cylinder to the inside of the mixing container and mixed inside the mixing container. The first and second gases are generated by mixing The mixed gas flows from the outflow port to the outside of the mixing container.
本發明為一種混合器，其中前述第一筒本體與前述第二筒本體，係沿著相互平行之直線分別延伸，前述流出口，是以使從前述第一筒開口流出至前述混合容器內而直行之前述第一氣體，與從前述第二筒開口流出至前述混合容器內而直行之前述第二氣體不會入射於前述流出口之方式所配置。 The invention is a mixer, wherein the first cylinder body and the second cylinder body respectively extend along parallel lines, and the outflow port is configured to flow out from the opening of the first cylinder into the mixing container. The first gas flowing straight and the second gas flowing out of the opening of the second cylinder into the mixing container and the second gas flowing straight are arranged so as not to enter the outflow port.
本發明為一種混合器，其中前述流出口，係設置在：使前述第一筒本體的外周側面朝向前述第一筒本體延伸之方向虛擬地延長之虛擬筒與前述混合容器的壁面所交叉之部分的壁面，且是在該交叉部分外側的前述壁面上。 The present invention is a mixer, wherein the outflow port is provided at a portion where the virtual cylinder that substantially virtually extends the outer side surface of the first cylinder body toward the direction in which the first cylinder body extends intersects with the wall surface of the mixing container. And the wall surface on the outside of the intersection.
此外，本發明為一種混合器，其中前述流出口，其至 少一部分係配置在：使前述第一筒本體的外周側面朝向前述第一筒本體延伸之方向虛擬地延長之虛擬筒與前述混合容器的壁面所交叉之位置，於前述第一筒開口與前述流出口之間，設置有擋板部件。 Further, the present invention is a mixer in which the aforementioned outflow port, which reaches A small portion is arranged at a position where the virtual cylinder that virtually extends the outer side surface of the first cylinder body toward the direction in which the first cylinder body extends intersects the wall surface of the mixing container, and the first cylinder opening and the flow A baffle member is provided between the outlets.
本發明為一種混合器，其中前述混合容器為長方體，前述混合容器的六個壁中之四個壁的壁面，是與前述第一筒本體的外周平行地配置，並與前述第一筒本體的外周側面面對。 The invention is a mixer, wherein the mixing container is a rectangular parallelepiped, and the wall surfaces of four of the six walls of the mixing container are arranged in parallel with the outer periphery of the first cylinder body and are parallel to the The perimeter faces sideways.
本發明為一種混合器，其中前述第一筒本體與前述第二筒本體，該內周側面的剖面形狀為圓形。 The invention is a mixer, wherein the cross-sectional shape of the inner peripheral side surface of the first cylinder body and the second cylinder body is circular.
本發明為一種真空處理裝置，其係具有：氣體供給裝置、及混合器、及氣體輸送管、及真空槽、以及氣體釋出裝置；第一氣體與第二氣體從前述氣體供給裝置導入於前述混合器，前述第一氣體與前述第二氣體在前述混合器中混合而生成混合氣體，所生成之混合氣體，是藉由前述氣體輸送管從前述混合器輸送至前述氣體釋出裝置，並從前述氣體釋出裝置釋出至前述真空槽的內部，供配置在前述真空槽的內部之處理對象物進行真空處理之真空處理裝置，其特徵為：前述混合器，具有：內部的空間與外部的環境氣體分離之混合容器、及使導入於根基側之第一氣體從前端側的第一筒開口流出之筒形狀的第一筒本體、及使導入於根基側之第二氣體從前端側的第二筒開口流出之筒形狀的第二筒本體、以及設置在前述混合容器的壁，並連接有前述氣體輸送管之流出口；前述第一筒開口，從前述 第一筒開口所面對之前述混合容器的壁面開離地配置在前述混合容器的內部，前述第二筒本體的至少一部分，是在該前述第二筒本體的外周側面與前述第一筒本體的內周側面處於非接觸之狀態下，被配置在前述第一筒本體的內部，使前述第一氣體於前述第一筒本體的內周側面與前述第二筒本體的外周側面之間的間隙中流動，前述第二筒開口，配置在前述第一筒本體的內部，前述第一筒開口，是配置在較前述第二筒開口離前述第一筒開口所面對之前述混合容器的壁面更近之位置，前述第一、第二氣體，是從前述第一筒開口釋出至前述混合容器的內部並在前述混合容器的內部混合，前述第一、第二氣體混合所生成之混合氣體，是從前述流出口流入至前述氣體輸送管的內部。 The present invention is a vacuum processing apparatus comprising: a gas supply device, a mixer, a gas delivery pipe, a vacuum tank, and a gas release device; a first gas and a second gas are introduced from the gas supply device into the foregoing; In the mixer, the first gas and the second gas are mixed in the mixer to generate a mixed gas. The generated mixed gas is transferred from the mixer to the gas release device through the gas delivery pipe, and The gas release device is a vacuum processing device for releasing the processing object disposed inside the vacuum tank to the inside of the vacuum tank, wherein the mixer has an internal space and an external A mixing container for separating ambient gas, a first cylindrical body having a cylindrical shape that allows the first gas introduced on the root side to flow out from the first tube opening on the front end side, and a first container that allows the second gas introduced on the root side to flow from the front end side. A tube-shaped second tube body flowing out from two tube openings, and a wall provided on the mixing container and connected to the flow of the gas delivery tube Mouth; the first cartridge opening, from the The wall surface of the mixing container facing the first tube opening is disposed inside the mixing container, and at least a part of the second tube body is on the outer peripheral side of the second tube body and the first tube body. The inner peripheral side surface of the first cylinder body is placed in a non-contact state so that the first gas is in a gap between the inner peripheral side surface of the first cylinder body and the outer peripheral side surface of the second cylinder body. In the middle flow, the second cylinder opening is disposed inside the first cylinder body, and the first cylinder opening is disposed more on the wall surface of the mixing container than the second cylinder opening facing the first cylinder opening. In a near position, the first and second gases are released from the opening of the first cylinder to the inside of the mixing container and mixed inside the mixing container. The mixed gas generated by mixing the first and second gases, It flows into the gas delivery pipe from the outflow port.
本發明為一種真空處理裝置，其中前述氣體供給裝置，具有：配置原料物質之氣體生成容器、以及加熱前述氣體生成容器內的前述原料物質之加熱裝置；前述原料物質由前述加熱裝置所加熱並藉由昇華或蒸發所生成之原料氣體，係作為前述第一氣體及前述第二氣體中之任一方的氣體而被供給至前述混合容器，至少於常溫常壓下為氣態物質之氣體，係作為另一方的氣體而被供給至前述混合容器。 The present invention is a vacuum processing apparatus, wherein the gas supply device includes a gas generating container in which a raw material substance is disposed, and a heating device for heating the raw material substance in the gas generating container; the raw material substance is heated by the heating device and borrowed. The raw material gas generated by sublimation or evaporation is supplied to the mixing container as one of the first gas and the second gas, and the gas is a gaseous substance at least at normal temperature and pressure. One of the gases is supplied to the mixing container.
本發明為一種真空處理裝置，其中藉由釋出至前述真空槽內之前述混合氣體所含有之前述第一氣體與前述第二氣體的化學反應，使薄膜形成於：配置在前述真空槽的內部之處理對象物表面。 The present invention is a vacuum processing device in which a thin film is formed in: disposed in the vacuum tank by a chemical reaction between the first gas and the second gas contained in the mixed gas released into the vacuum tank. The surface of the object to be treated.
本發明為一種真空處理裝置，其中設置有：將從前述混合器所供給之前述混合氣體電漿化之電漿裝置。 The present invention is a vacuum processing apparatus provided with a plasma apparatus for plasmatizing the aforementioned mixed gas supplied from the aforementioned mixer.
本發明為一種真空處理裝置，其中前述第一筒本體與前述第二筒本體，係沿著相互平行之直線分別延伸；前述流出口，是以使從前述第一筒開口流出至前述混合容器內而直行之前述第一氣體，與從前述第二筒開口流出至前述混合容器內而直行之前述第二氣體不會入射於前述流出口之方式來配置。 The present invention is a vacuum processing device, wherein the first cylinder body and the second cylinder body respectively extend along parallel lines; the outflow port is configured to flow out from the opening of the first cylinder into the mixing container. The first gas traveling straight and the second gas flowing out of the opening of the second cylinder into the mixing container and the second gas traveling straight are arranged so as not to enter the outflow port.
本發明為一種真空處理裝置，其中前述流出口，係設置在：使前述第一筒本體的外周側面朝向前述第一筒本體延伸之方向虛擬地延長之虛擬筒與前述混合容器的壁面所交叉之部分的壁面，且是在該交叉部分外側的前述壁面上。 The present invention is a vacuum processing device, wherein the outflow port is provided at a position where a virtual cylinder that virtually extends an outer side surface of the first cylinder body toward a direction in which the first cylinder body extends intersects a wall surface of the mixing container. Part of the wall surface is on the wall surface outside the intersection.
本發明為一種真空處理裝置，其中前述流出口，係配置在：使前述第一筒本體的外周側面朝向前述第一筒本體延伸之方向虛擬地延長之虛擬筒與前述混合容器的壁面所交叉之部分的壁面，且前述流出口之至少一部分是以和該交叉部分重疊之方式來配置，於前述第一筒開口與前述流出口之間，設置有擋板部件。 The present invention is a vacuum processing apparatus, wherein the outflow port is disposed at a position where a virtual cylinder that virtually extends an outer side surface of the first cylinder body toward a direction in which the first cylinder body extends intersects a wall surface of the mixing container. Part of the wall surface, and at least a part of the outflow port is arranged so as to overlap the intersecting portion, and a baffle member is provided between the first tube opening and the outflow port.
本發明為一種真空處理裝置，其中前述混合容器為長方體，前述混合容器的六個壁中之四個壁的壁面，是與前述第一筒本體的外周平行地配置，並與前述第一筒本體的外周側面面對。 The invention is a vacuum processing device, wherein the mixing container is a rectangular parallelepiped, and the wall surfaces of four of the six walls of the mixing container are arranged in parallel with the outer periphery of the first cylinder body and are parallel to the first cylinder body. The peripheral side faces.
再者，本發明為一種真空處理裝置，其中前述第一筒 本體與前述第二筒本體，該內周側面的剖面形狀為圓形。 Furthermore, the present invention is a vacuum processing apparatus, wherein the first cylinder The cross-sectional shape of the main body and the second tube body is round.
本發明之混合器，可均一地混合導入於混合器之相互不同種類的第一氣體與第二氣體。尤其，本發明之混合器，即使第一氣體與第二氣體之流量差大，亦可均一地混合第一氣體與第二氣體。 The mixer of the present invention can uniformly mix the first gas and the second gas of different types introduced into the mixer. In particular, the mixer of the present invention can uniformly mix the first gas and the second gas even if the flow rate difference between the first gas and the second gas is large.
此外，即使第一或第二氣體以接近於混合器的內部壓力之壓力被供給至混合器，亦可均一地混合第一、第二氣體。 In addition, even if the first or second gas is supplied to the mixer at a pressure close to the internal pressure of the mixer, the first and second gases can be mixed uniformly.
此外，能夠以較小的壓力損耗來混合。 In addition, it is possible to mix with a small pressure loss.
因此，本發明之真空處理裝置，可對處理對象物的表面均一地進行真空處理。 Therefore, the vacuum processing apparatus of the present invention can uniformly vacuum-process the surface of a processing object.
3、3a~3d‧‧‧混合器 3.3a ~ 3d‧‧‧ mixer
5‧‧‧氣體生成容器 5‧‧‧Gas generating container
6‧‧‧原料物質 6‧‧‧ raw materials
7‧‧‧加熱裝置 7‧‧‧Heating device
10‧‧‧混合容器 10‧‧‧ mixing container
11、11a~11d‧‧‧第一筒本體 11, 11a ~ 11d‧‧‧The first tube body
12、12a~12d‧‧‧第二筒本體 12, 12a ~ 12d‧‧‧Second tube body
13‧‧‧混合空間 13‧‧‧ mixed space
14‧‧‧交叉部分 14‧‧‧ Cross section
19‧‧‧釋出裝置 19‧‧‧ release device
24‧‧‧真空槽 24‧‧‧Vacuum tank
25‧‧‧氣體輸送管 25‧‧‧Gas delivery pipe
28、28a‧‧‧流出口 28, 28a‧‧‧ Outlet
29‧‧‧虛擬筒 29‧‧‧Virtual tube
30‧‧‧處理對象物 30‧‧‧ Handling object
34‧‧‧電漿裝置 34‧‧‧ Plasma device
45、45a~45d‧‧‧第一筒開口 45, 45a ~ 45d‧‧‧‧the first tube opening
46、46a~46d‧‧‧第二筒開口 46, 46a ~ 46d‧‧‧Second tube opening
47‧‧‧間隙 47‧‧‧ clearance
48‧‧‧助跑空間 48‧‧‧ Run-up space
第1圖(a)係本發明之真空處理裝置的一例，(b)係本發明之真空處理裝置的其他例。 Fig. 1 (a) is an example of the vacuum processing apparatus of the present invention, and (b) is another example of the vacuum processing apparatus of the present invention.
第2圖係本發明之混合器的第一實施例。 Fig. 2 is a first embodiment of the mixer of the present invention.
第3圖係本發明之混合器的第二實施例。 Fig. 3 shows a second embodiment of the mixer of the present invention.
第4圖係本發明之混合器的第三實施例。 Fig. 4 shows a third embodiment of the mixer of the present invention.
第5圖係本發明之混合器的第四實施例。 Fig. 5 shows a fourth embodiment of the mixer of the present invention.
第6圖係本發明之混合器的第五實施例。 Fig. 6 shows a fifth embodiment of the mixer of the present invention.
第7圖係第一比較例的混合器。 Fig. 7 shows the mixer of the first comparative example.
第8圖係第二比較例的混合器。 Fig. 8 shows the mixer of the second comparative example.
第9圖係第三比較例的混合器。 Fig. 9 is a mixer of a third comparative example.
第10圖(a)係第二實施例的混合器之TEOS氣體的質量分率分布(導入例1)，(b)係顯示分布的交界線與混合容器的尺寸之圖。 Fig. 10 (a) is a mass fraction distribution of TEOS gas in the mixer of the second embodiment (Introduction Example 1), and (b) is a diagram showing the boundary of the distribution and the size of the mixing container.
第11圖(a)係第二實施例的混合器之TEOS氣體的質量分率分布(導入例2)，(b)係分布的交界線。 Fig. 11 (a) is a mass fraction distribution of TEOS gas in the mixer of the second embodiment (introduction example 2), and (b) is a boundary line of the distribution.
第12圖(a)係改變助跑空間的長度後之第二實施例的混合器之TEOS氣體的質量分率分布(導入例1)，(b)係顯示分布的交界線與混合容器的尺寸之圖。 Fig. 12 (a) shows the mass fraction distribution of TEOS gas in the mixer of the second embodiment after changing the length of the run-up space (introduction example 1), and (b) shows the boundary between the distribution and the size of the mixing container. Illustration.
第13圖(a)係改變助跑空間的長度後之第二實施例的混合器之TEOS氣體的質量分率分布(導入例2)，(b)係分布的交界線。 FIG. 13 (a) is the mass fraction distribution of TEOS gas in the mixer of the second embodiment after changing the length of the run-up space (introduction example 2), and (b) is the boundary of the distribution.
第14圖(a)係第四實施例的混合器之TEOS氣體的質量分率分布(導入例1)，(b)係分布的交界線。 Fig. 14 (a) is the mass fraction distribution of TEOS gas in the mixer of the fourth embodiment (Introduction Example 1), and (b) is the boundary line of the distribution.
第15圖(a)係第一比較例的混合器之TEOS氣體的質量分率分布(導入例1)，(b)係分布的交界線。 Fig. 15 (a) is the mass fraction distribution of TEOS gas in the mixer of the first comparative example (Introduction Example 1), and (b) is the boundary line of the distribution.
第16圖(a)係第二比較例的混合器之TEOS氣體的質量分率分布(導入例1)，(b)係分布的交界線。 Fig. 16 (a) is the mass fraction distribution of TEOS gas in the mixer of the second comparative example (Introduction Example 1), and (b) is the boundary line of the distribution.
第17圖(a)係第三比較例的混合器之TEOS氣體的質量分率分布(導入例1)，(b)係分布的交界線。 Fig. 17 (a) is the mass fraction distribution of TEOS gas in the mixer of the third comparative example (Introduction Example 1), and (b) is the boundary line of the distribution.
第18圖(a)係第三比較例的混合器之TEOS氣體的質量分率分布(導入例2)，(b)係分布的交界線。 Fig. 18 (a) is the mass fraction distribution of TEOS gas in the mixer of the third comparative example (Introduction Example 2), and (b) is the boundary line of the distribution.
第19圖係顯示圖樣與TEOS氣體的質量分率之對應 關係之圖。 Figure 19 shows the correspondence between the pattern and the mass fraction of TEOS gas Diagram of relationships.
第1圖(a)的符號2表示本發明之真空處理裝置。 Reference numeral 2 in Fig. 1 (a) indicates a vacuum processing apparatus of the present invention.
此真空處理裝置2，係具有真空槽24，於真空槽24中，設置有釋出裝置19、與氣體供給裝置4、與本發明的第一實施例之混合器3。 This vacuum processing apparatus 2 is provided with a vacuum tank 24, and in the vacuum tank 24, a discharge device 19, a gas supply device 4, and a mixer 3 according to the first embodiment of the present invention are provided.
於真空槽24連接有真空排氣裝置33，當藉由真空排氣裝置33對真空槽24的內部進行真空排氣時，混合器3的內部亦被真空排氣。 A vacuum exhaust device 33 is connected to the vacuum tank 24. When the inside of the vacuum tank 24 is evacuated by the vacuum exhaust device 33, the inside of the mixer 3 is also evacuated.
混合器3與氣體供給裝置4，係配置在真空槽24的外部。 The mixer 3 and the gas supply device 4 are arranged outside the vacuum tank 24.
氣體供給裝置4，具有輔助原料氣體供給裝置8與主原料氣體供給裝置9。 The gas supply device 4 includes an auxiliary source gas supply device 8 and a main source gas supply device 9.
輔助原料氣體供給裝置8，在此為氣體高壓罐，於輔助原料氣體供給裝置8中，充填有常溫(「常溫」意指5℃-35℃的溫度：日本工業規格JIS Z8703)且常壓(「常壓」意指1013hPa的壓力)下為氣體之輔助原料氣體。 Auxiliary raw material gas supply device 8 is a high-pressure gas tank. The auxiliary raw material gas supply device 8 is filled with normal temperature ("normal temperature" means a temperature of 5 ° C to 35 ° C: Japanese Industrial Standard JIS Z8703) "Atmospheric pressure" means an auxiliary raw material gas that is a gas at a pressure of 1013 hPa.
主原料氣體供給裝置9，係具有：氣體生成容器5、與原料物質6、與加熱裝置7。原料物質6被配置在氣體生成容器5的內部，當在藉由真空排氣裝置33對氣體生成容器5的內部進行真空排氣後之狀態下，藉由加 熱裝置7來加熱氣體生成容器5時，原料物質6升溫而到達昇華溫度或蒸發溫度時，藉由昇華或蒸發來生成原料物質6的氣體之主原料氣體。亦可藉由加熱裝置7直接加熱原料物質6，並藉由昇華或蒸發來產生原料物質6的氣體之主原料氣體。 The main raw material gas supply device 9 includes a gas generating container 5, a raw material substance 6, and a heating device 7. The raw material substance 6 is arranged inside the gas generating container 5 and, after the inside of the gas generating container 5 is evacuated by the vacuum exhaust device 33, the When the heat device 7 heats the gas generating container 5, when the raw material substance 6 is heated to reach the sublimation temperature or evaporation temperature, the main raw material gas of the gas of the raw material substance 6 is generated by sublimation or evaporation. It is also possible to directly heat the raw material substance 6 by the heating device 7 and generate the main raw material gas of the gas of the raw material substance 6 by sublimation or evaporation.
輔助原料氣體供給裝置8與主原料氣體供給裝置9中之任一方的裝置，係藉由第一配管26連接於混合器3，另一方的裝置藉由第二配管27連接於混合器3，從輔助原料氣體供給裝置8所供給之輔助原料氣體與從主原料氣體供給裝置9所供給之主原料氣體中之任一方的氣體，作為第一氣體通過第一配管26被供給至混合器3，另一方的氣體作為第二氣體通過第二配管27被供給至混合器3。 One of the auxiliary raw material gas supply device 8 and the main raw material gas supply device 9 is connected to the mixer 3 through a first pipe 26, and the other device is connected to the mixer 3 through a second pipe 27. Either one of the auxiliary raw material gas supplied from the auxiliary raw material gas supply device 8 and the main raw material gas supplied from the main raw material gas supply device 9 is supplied to the mixer 3 as the first gas through the first pipe 26, and the other One of the gases is supplied as a second gas to the mixer 3 through the second pipe 27.
真空槽24的內部與混合器3的內部藉由真空排氣裝置33進行真空排氣，即使第一、第二氣體被供給至混合器3，混合器3與真空槽24的內部仍維持真空環境。 The inside of the vacuum tank 24 and the inside of the mixer 3 are evacuated by a vacuum exhaust device 33. Even if the first and second gases are supplied to the mixer 3, the inside of the mixer 3 and the vacuum tank 24 maintains a vacuum environment. .
第2圖係顯示混合器3的構造。 FIG. 2 shows the structure of the mixer 3.
混合器3，係具有內部的空間與外部的環境氣體分離之混合容器10，於混合容器10之內部的空間中，配置有內部中空且剖面呈圓形之筒形狀的第一筒本體11。於第一筒本體11之筒形狀的內側，配置有內部中空且剖面呈圓形之筒形狀的第二筒本體12。混合容器10為長方體，於長度方向上延伸之四面中，為最大面積且相互平行之兩 面係水平地配置。第一筒本體11與第二筒本體12，以使筒形狀的中心軸線呈水平之方式來配置。第2圖為混合器3的水平剖面圖，為從上方觀看剖面時之圖。 The mixer 3 is a mixing container 10 having an internal space separated from an external ambient gas. In the internal space of the mixing container 10, a first tube body 11 having a hollow cylindrical shape and a circular cross section is arranged. On the inside of the tube shape of the first tube body 11, a second tube body 12 having a hollow inside and a circular cross section is arranged. The mixing container 10 is a rectangular parallelepiped, and the four sides extending in the length direction are the two with the largest area and parallel to each other. The surface is arranged horizontally. The first tube body 11 and the second tube body 12 are arranged so that the center axis of the tube shape is horizontal. Fig. 2 is a horizontal cross-sectional view of the mixer 3, and is a view when the cross-section is viewed from above.
本實施例之混合器3，係具有小室21，第一配管26連接於小室21，通過第一配管26之第一氣體被導入於進行真空排氣後之小室21的內部22。 The mixer 3 of this embodiment has a small chamber 21, and a first pipe 26 is connected to the small chamber 21. The first gas passing through the first pipe 26 is introduced into the inside 22 of the small chamber 21 after the vacuum exhaust.
於小室21的壁上設置有小孔23，第一筒本體11的一端，以使第一筒本體11的中空部分連接於小孔23之方式固定在小室21的壁，第一筒本體11的另一端，被配置在混合容器10的內部。小室21的內部，藉由第一筒本體11連接於混合容器10的內部，藉由第一配管26導入於小室21的內部之第一氣體，通過第一配管26被供給至混合容器10的內部。小室21的內部，在第一筒本體11以外的部分上，小室21從混合容器10的內部中分離。 A small hole 23 is provided on the wall of the small chamber 21, and one end of the first tube body 11 is fixed to the wall of the small chamber 21 such that the hollow portion of the first tube body 11 is connected to the small hole 23. The other end is arranged inside the mixing container 10. The inside of the cell 21 is connected to the inside of the mixing container 10 through the first cylinder body 11, and the first gas introduced into the inside of the cell 21 through the first pipe 26 is supplied to the inside of the mixing container 10 through the first pipe 26. . Inside the small chamber 21, the small chamber 21 is separated from the inside of the mixing container 10 in a portion other than the first cylinder body 11.
在此，混合容器10的壁中之接觸於混合容器10的外部環境之壁，構成為小室21的壁，於該小室21的壁上設置有第一、第二導入口37、38。第一配管26的前端連接於第一導入口37，通過第一配管26之第一氣體，從第一導入口37被導入於小室21的內部22。 Here, the wall of the mixing container 10 that is in contact with the external environment of the mixing container 10 is configured as a wall of a small chamber 21, and first and second introduction ports 37 and 38 are provided on the wall of the small chamber 21. The front end of the first pipe 26 is connected to the first introduction port 37, and the first gas passing through the first pipe 26 is introduced from the first introduction port 37 into the inside 22 of the cell 21.
小孔23，係形成於小室21的壁中之接觸於混合容器10的內部環境之壁。 The small hole 23 is a wall formed in the wall of the small chamber 21 and in contact with the internal environment of the mixing container 10.
第二筒本體12，係插通於第二導入口38與小孔23，第二筒本體12之前端側的至少一部分，位於第一筒本體11的內部而構成，於第一筒本體11的外周側面與 第二筒本體12的內周側面之間，形成有間隙47。 The second cylinder body 12 is inserted through the second inlet 38 and the small hole 23. At least a part of the front end side of the second cylinder body 12 is located inside the first cylinder body 11. Peripheral side with A gap 47 is formed between the inner peripheral side surfaces of the second cylinder body 12.
第一導入口37的緣部分與第一配管26的前端之間，以及第二導入口38的緣部分與第二筒本體12的外周面之間，係形成為氣密，以使大氣不會從第一、第二導入口37、38侵入於小室21的內部或混合容器10的內部而構成。 The edge portion of the first introduction port 37 and the front end of the first pipe 26 and the edge portion of the second introduction port 38 and the outer peripheral surface of the second tube body 12 are formed to be airtight so that the atmosphere is not affected. It penetrates into the inside of the cell 21 or the inside of the mixing container 10 from the 1st and 2nd introduction ports 37 and 38, and is comprised.
在此，第二筒本體12中，***於第一筒本體11且位於第一筒本體11的內部之部分的外周側面，係與第一筒本體11的內周側面處於非接觸。 Here, the second cylinder body 12 is inserted into the first cylinder body 11 and located on the outer peripheral side of the portion inside the first cylinder body 11, and is in non-contact with the inner peripheral side of the first cylinder body 11.
形成於第一筒本體11的內周側面與第二筒本體12的外周側面之間之間隙47，其根基側的部分連接於小室21的內部空間，導入於小室21之第一氣體，從間隙47的根基側，導入於第二筒本體12的外周側面與第一筒本體11的內周側面之間的部分之間隙47內。 A gap 47 formed between an inner peripheral side surface of the first cylinder body 11 and an outer peripheral side surface of the second cylinder body 12 is connected to an inner space of the cell 21 at a base side portion, and a first gas introduced into the cell 21 passes through the gap. The base side of 47 is introduced into the gap 47 between the outer peripheral side surface of the second tube body 12 and the inner peripheral side surface of the first tube body 11.
於第一筒本體11之位於混合容器10的內部之前端，設置有第一筒開口45，於第二筒本體12的前端側，設置有第二筒開口46。 A first cylinder opening 45 is provided at the front end of the first cylinder body 11 located inside the mixing container 10, and a second cylinder opening 46 is provided at the front end side of the second cylinder body 12.
第二筒本體12的根基側連接於第二配管27，第二筒本體12的內部與第二配管27的內部夾隔著第二導入口38而連接，通過第二配管27之第二氣體，從第二導入口38導入於第二筒本體12的內部。 The base side of the second cylinder body 12 is connected to the second pipe 27, and the inside of the second cylinder body 12 and the inside of the second pipe 27 are connected via the second inlet 38, and the second gas passes through the second pipe 27. It is introduced into the inside of the second cylinder body 12 through the second introduction port 38.
第二筒開口46，位於第一筒本體11的內部中空部分，第二氣體從第二筒開口46流出至第一筒本體11的內部。 The second cylinder opening 46 is located in the inner hollow portion of the first cylinder body 11, and the second gas flows out from the second cylinder opening 46 to the inside of the first cylinder body 11.
將第一筒本體11的內部中空部分且為第一筒開口45與第二筒開口46之間的部分稱為助跑空間48時，第二氣體從第二筒開口46流出至助跑空間48。 When the internal hollow portion of the first cylinder body 11 and the portion between the first cylinder opening 45 and the second cylinder opening 46 is referred to as the run-up space 48, the second gas flows out from the second cylinder opening 46 to the run-up space 48.
間隙47，於第二筒開口46的周圍連接於助跑空間48，於間隙47中流動之第一氣體，從間隙47之連接於助跑空間48之部分，流出至助跑空間48。 The gap 47 is connected to the run-up space 48 around the second cylinder opening 46. The first gas flowing in the gap 47 flows from the portion of the gap 47 connected to the run-up space 48 to the run-up space 48.
助跑空間48，係由第一筒本體11所包圍，流出至助跑空間48之第一、第二氣體無法擴散。 The run-up space 48 is surrounded by the first cylinder body 11, and the first and second gases flowing out of the run-up space 48 cannot be diffused.
流出至助跑空間48之第一氣體所流動的方向，係與於間隙47中流動時為相同方向，流出至助跑空間48之第二氣體所流動的方向，亦與於第二筒本體12的內部流動時為相同方向。 The direction of the first gas flowing out of the run-up space 48 is the same direction as when flowing in the gap 47, and the direction of the second gas flowing out of the run-up space 48 is also the same as the inside of the second cylinder body 12. It flows in the same direction.
第一、第二筒本體11、12，為粗度一定之管且直線狀地延伸，間隙47內部的第一氣體，直行於沿著第一筒本體11延伸之方向，第二筒本體12內部的第二氣體，直行於沿著第二筒本體12延伸之方向。助跑空間48內，第一、第二氣體，於流出至助跑空間48不久前於相同方向上流動。第二氣體，由於在筒狀地流動之第一氣體的內側中流動，所以在助跑空間48的內部中，第二氣體在藉由第一氣體包圍該周圍之狀態下流動，第一、第二氣體，在第二氣體由第一氣體所包圍之狀態下，從第一筒開口45流出至混合容器10的內部。 The first and second cylinder bodies 11 and 12 are tubes with a constant thickness and extend linearly. The first gas in the gap 47 runs straight along the direction in which the first cylinder body 11 extends, and the inside of the second cylinder body 12 The second gas is directed in a direction extending along the second cylinder body 12. In the approach space 48, the first and second gases flow in the same direction shortly before flowing out to the approach space 48. Since the second gas flows inside the first gas flowing in a cylindrical shape, the second gas flows in the run-up space 48 in a state in which the first gas is surrounded by the first gas. The gas flows out from the first cylinder opening 45 into the mixing container 10 in a state where the second gas is surrounded by the first gas.
第一筒本體11，由於未位於從第一筒開口45所流出之第一、第二氣體的周圍，因此從第一筒開口45 所流出之第一、第二氣體的流動雖會擴展，但該擴展較小，所以從第一筒開口45所流出之第一、第二氣體，於助跑空間48中流動時，可視為直行於相同方向。 The first cylinder body 11 is not located around the first and second gases flowing out of the first cylinder opening 45, so the first cylinder body 11 Although the flow of the first and second gases flowing out will expand, the expansion is small, so the first and second gases flowing out of the first cylinder opening 45 can be regarded as going straight in the run-up space 48 Same direction.
間隙47的形狀為甜甜圈狀，於助跑空間48內，從間隙47所流出之第一氣體，於第二氣體的周圍流動，第二氣體，在由第一氣體所包圍之狀態下流動。 The shape of the gap 47 is a donut shape. In the run-up space 48, the first gas flowing from the gap 47 flows around the second gas, and the second gas flows in a state surrounded by the first gas.
第2圖的符號29，係顯示將第一筒本體11的外周側面，朝向第一筒本體11延伸之方向虛擬地延長時之筒的虛擬筒，第一、第二氣體，往該虛擬筒29延伸之方向直行。 The symbol 29 in FIG. 2 shows a virtual cylinder of the cylinder when the outer side surface of the first cylinder body 11 is extended toward the direction in which the first cylinder body 11 extends. The first and second gases are directed toward the virtual cylinder 29. Go straight in the direction of extension.
於混合容器10的壁上，設置有連接於氣體輸送管25的一端之流出口28。氣體輸送管25的另一端連接於釋出裝置19，混合容器10的內部空間與釋出裝置19的內部空間，藉由流出口28與氣體輸送管25所連接。 An outlet 28 connected to one end of the gas delivery pipe 25 is provided on the wall of the mixing container 10. The other end of the gas delivery pipe 25 is connected to the discharge device 19, and the internal space of the mixing container 10 and the internal space of the discharge device 19 are connected to the gas delivery pipe 25 through an outflow port 28.
虛擬筒29，係與混合容器10的壁面中之與第一筒開口45相面對的壁面交叉，流出口28，係設置在壁面中之位於較虛擬筒29與壁面交叉所形成之部分的交叉部分14更外側之部分的壁面。 The virtual cylinder 29 intersects with the wall surface of the mixing container 10 that faces the first cylinder opening 45, and the outflow port 28 is intersected in the wall surface at a portion formed by the intersection of the virtual cylinder 29 and the wall surface The wall surface of the outer part of the part 14.
第一筒本體11延伸之方向與第二筒本體12延伸之方向平行，從第一筒開口45所流出之第一、第二氣體，往平行於第一筒本體11延伸之方向的方向直行。直行之第一、第二氣體，不會流入於流出口28中。 The direction in which the first cylinder body 11 extends is parallel to the direction in which the second cylinder body 12 extends. The first and second gases flowing out of the first cylinder opening 45 go straight in a direction parallel to the direction in which the first cylinder body 11 extends. The first and second gases traveling straight will not flow into the outflow port 28.
從第一筒開口45所流出之第二氣體，在由第一氣體所包圍之狀態下於混合容器10內流動，並碰撞於 虛擬筒29所交叉之壁面。碰撞於壁面之第二氣體，由於沿著壁面朝向四方流動，所以碰撞於與朝向四方流動之第二氣體的第一氣體，即使不藉由沿著壁面所擴展之第二氣體碰撞於壁面，亦會朝向沿著壁面之四方流動。 The second gas flowing out of the first cylinder opening 45 flows in the mixing container 10 in a state surrounded by the first gas, and collides with The wall surface intersected by the virtual tube 29. Since the second gas that collides with the wall surface flows toward the four sides along the wall surface, the first gas that collides with the second gas that flows toward the four sides does not collide with the wall surface without the second gas extending along the wall surface. Will flow in all directions along the wall.
其結果為，從第一筒開口45所流出之第一、第二氣體兩者，沿著與第一筒開口45相對向之壁面擴展。 As a result, both the first and second gases flowing from the first cylinder opening 45 expand along the wall surface facing the first cylinder opening 45.
於虛擬筒29的周圍與第一筒本體11的周圍，設置有以虛擬筒29與第一筒本體11為中心之甜甜圈狀的混合空間13。 A donut-shaped mixing space 13 is provided around the virtual tube 29 and the first tube body 11 around the virtual tube 29 and the first tube body 11.
沿著第二氣體所碰撞之壁面擴展之第一、第二氣體，係碰撞於混合容器10的其他壁面，此外，並碰撞於第一筒本體11的外周表面，使第一、第二氣體的流動方向改變，第一、第二氣體，進入於混合空間13的內部，並於混合空間13中形成第一、第二氣體的渦流。當形成此渦流時，於混合空間13的內部中流動之第一、第二氣體，藉由渦流的形成而均一地混合，生成混合氣體。 The first and second gases extending along the wall surface collided by the second gas collide with other wall surfaces of the mixing container 10, and in addition, they collide with the outer peripheral surface of the first cylinder body 11 to make the first and second gases The flow direction changes, and the first and second gases enter the interior of the mixing space 13, and a vortex of the first and second gases is formed in the mixing space 13. When this vortex is formed, the first and second gases flowing in the interior of the mixing space 13 are uniformly mixed by the formation of the vortex to generate a mixed gas.
所生成之混合氣體，從混合空間13流入至流出口28，並通過氣體輸送管25往釋出裝置19移動。 The generated mixed gas flows from the mixing space 13 to the outflow port 28, and moves to the discharge device 19 through the gas delivery pipe 25.
釋出裝置19，係具有在內部設置有空洞39之釋出容器35，於氣體輸送管25內移動之混合氣體，被導入於空洞39。 The release device 19 is a release container 35 provided with a cavity 39 inside, and a mixed gas moving in the gas delivery pipe 25 is introduced into the cavity 39.
於真空槽24的內部，配置有載台31，於載台31上，配置基板等之處理對象物30。釋出容器35的表面中之至少一面，被配置在真空槽24的內部，該面朝向載 台31所處之方向。 A stage 31 is arranged inside the vacuum chamber 24, and a processing object 30 such as a substrate is arranged on the stage 31. At least one of the surfaces of the release container 35 is disposed inside the vacuum tank 24, and this surface faces the carrier. The direction in which the station 31 is located.
於朝向載台31所處之方向之釋出容器35的面上，形成有複數個釋出口36，導入於空洞39之混合氣體，從釋出口36朝向處理對象物30釋出至真空槽24的內部。此真空處理裝置2中，釋出容器35連接於由電漿用電源所構成之電漿裝置34，當電漿裝置34對釋出容器35施加電壓時，生成混合氣體的電漿，使第一氣體與第二氣體進行化學反應，當生成固體時，由所生成之固體所構成之薄膜，係成長於處理對象物30的表面。 A plurality of release ports 36 are formed on the surface of the release container 35 facing the direction of the stage 31. The mixed gas introduced into the cavity 39 is released from the release port 36 toward the processing object 30 to the vacuum tank 24. internal. In this vacuum processing apparatus 2, the discharge container 35 is connected to a plasma device 34 constituted by a plasma power source. When the plasma device 34 applies a voltage to the discharge container 35, a plasma of a mixed gas is generated to make the first The gas reacts with the second gas, and when a solid is formed, a thin film composed of the generated solid is grown on the surface of the object 30 to be processed.
在薄膜成長為既定膜厚時，停止電漿裝置34的電壓輸出，關閉設置在第一、第二配管26、27之閥，停止將混合氣體供給至真空槽24內部，並將處理對象物30往真空槽24的外部移動，將未處理的處理對象物30送入至真空槽24的內部，放置於載台31上，然後開啟閥並藉由釋出裝置19將混合氣體供給至真空槽24的內部，從電漿裝置34輸出電壓，形成混合氣體的電漿，而在處理對象物30的表面上形成薄膜。 When the film grows to a predetermined film thickness, the voltage output of the plasma device 34 is stopped, the valves provided in the first and second pipes 26 and 27 are closed, the supply of the mixed gas into the vacuum tank 24 is stopped, and the processing object 30 Move to the outside of the vacuum tank 24, send the unprocessed object 30 to the inside of the vacuum tank 24, place it on the stage 31, open the valve, and supply the mixed gas to the vacuum tank 24 through the release device 19. Inside, a voltage is output from the plasma device 34 to form a plasma of a mixed gas, and a thin film is formed on the surface of the processing object 30.
如此，從第一、第二氣體生成混合氣體，於真空環境中產生混合氣體的電漿，而在複數個處理對象物30上形成薄膜。 In this way, a mixed gas is generated from the first and second gases, a plasma of the mixed gas is generated in a vacuum environment, and a thin film is formed on the plurality of processing objects 30.
上述混合器3中，流出口28係設置在第一筒開口45所直接面對之壁面上，但流出口28只要是配置在從第一筒開口45流出而直行之第一、第二氣體所不會流入之位置即可，此外，亦可配置在虛擬筒29所交叉之壁 面以外的壁面。 In the above-mentioned mixer 3, the outflow port 28 is provided on the wall surface directly facing the first cylinder opening 45, but the outflow port 28 is provided as long as it is disposed in the first and second gas outlets that flow out from the first cylinder opening 45. The position where it does not flow in is sufficient, and it can also be arranged on the wall where the virtual tube 29 crosses Wall surface other than surface.
第1圖(b)的符號2a表示本發明之其他例子的真空處理裝置。 Reference numeral 2a in Fig. 1 (b) indicates a vacuum processing apparatus according to another example of the present invention.
第1圖(b)、第3圖的混合器3a，係於混合容器10的內部配置有第一、第二筒本體11a、12a的第一、第二筒開口45a、46a，流出口28a設置在與第一筒開口45a所直接面對之壁面垂直之壁面，且係將第一實施例的混合器3變形之第二實施例的混合器3a。 The mixer 3a of FIGS. 1 (b) and 3 is attached to the inside of the mixing container 10, and the first and second cylinder openings 45a and 46a of the first and second cylinder bodies 11a and 12a are arranged, and the outflow port 28a is provided. On the wall surface perpendicular to the wall surface directly facing the first tube opening 45a, the mixer 3a of the second embodiment is a modification of the mixer 3 of the first embodiment.
如下述所示，從TEOS氣體質量分率的評估值來看，通常，第一氣體係使用使液體的TEOS(四乙氧矽烷：分子量208.37)蒸發而生成之TEOS氣體，第二氣體使用充填於高壓罐之氧氣(O2：分子量31.99)，但在上述例子中，第一氣體係使用充填於高壓罐之氧氣，第二氣體使用使液體的TEOS蒸發而生成之TEOS氣體。 As shown below, from the evaluation value of the TEOS gas mass fraction, generally, the first gas system uses a TEOS gas generated by evaporating a liquid TEOS (tetraethoxysilane: molecular weight 208.37), and the second gas is filled with Oxygen (O 2 : molecular weight 31.99) in a high-pressure tank. However, in the above example, the first gas system uses oxygen filled in the high-pressure tank, and the second gas uses TEOS gas generated by evaporating the TEOS of the liquid.
第10圖(a)，係於第3圖之第二實施例的混合器3a中，作為導入例1，使用TEOS氣體作為第一氣體並使用氧氣作為第二氣體，然後分別導入於第一、第二筒本體11a、12a並流出至流出口28a時，藉由分布模擬來算出混合容器10內部的複數個算出場所中之TEOS氣體的質量與氧氣質量，並從下列式： TEOS氣體質量分率=TEOS氣體質量/(TEOS氣體質量+氧氣質量) Fig. 10 (a) is the mixer 3a of the second embodiment shown in Fig. 3. As introduction example 1, TEOS gas is used as the first gas and oxygen is used as the second gas. When the second cylinder body 11a, 12a flows out to the outflow port 28a, the mass of TEOS gas and the mass of oxygen in a plurality of calculation locations inside the mixing container 10 are calculated by distribution simulation, and the following formula is obtained: TEOS gas mass fraction = TEOS gas mass / (TEOS gas mass + oxygen mass)
來求取混合容器10內部的算出場所中之TEOS氣體質量分率，並製作第10圖(a)的TEOS氣體質量分率分布圖。 The TEOS gas mass fraction in the calculation place inside the mixing container 10 is calculated | required, and the TEOS gas mass fraction distribution chart of FIG. 10 (a) is produced.
製作分布圖，同時在從混合容器10的內部流出至流出口28a之場所中之TEOS氣體的質量分率之值中，以最大值為A且最小值為B時，藉由下列式：評估值(%)=±(A-B)/(A+B)×100 When a distribution chart is prepared and the maximum value of A and the minimum value of B in the mass fraction of TEOS gas flowing from the interior of the mixing container 10 to the outflow port 28a, the following formula is used: (%) = ± (AB) / (A + B) × 100
來算出TEOS氣體之質量分率分布的評估值。 The estimated value of the mass fraction distribution of the TEOS gas is calculated.
在第10圖(a)及顯示質量分率分布之後述其他圖，與後述顯示質量分布階段的交界線之各圖中，係省略流出口。在同圖(a)及顯示質量分率分布之後述各圖中，將TEOS氣體質量分率之值分成4階段並附加圖樣來顯示。此等圖樣與TEOS氣體質量分率之關係如第19圖所示。 In Fig. 10 (a) and the other figures described later after the mass fraction distribution is shown, in each of the diagrams showing the boundary line of the mass distribution stage described later, the outflow port is omitted. In the same figure (a) and the subsequent figures showing the mass fraction distribution, the value of the TEOS gas mass fraction is divided into four stages and a pattern is added to display. The relationship between these patterns and the mass fraction of TEOS gas is shown in Figure 19.
第10圖(a)的質量分率分布圖，係作為氧氣以較TEOS氣體更大之流量於第一或第二筒本體11a、12a中流動者來求取質量分率分布圖，在此，TEOS氣體與O2氣體之流量比係設為12：600，此外，將混合容器10的內部設為2000Pa來計算混合容器10內的質量分率分布。 The mass fraction distribution diagram of Fig. 10 (a) is obtained as a flow of oxygen at a greater flow rate than TEOS gas in the first or second cylinder body 11a, 12a to obtain the mass fraction distribution diagram. Here, The flow rate ratio of the TEOS gas to the O 2 gas was set to 12: 600, and the inside of the mixing container 10 was set to 2000 Pa to calculate the mass fraction distribution in the mixing container 10.
以下之實施例及比較例的TEOS氣體與氧氣，係作為以與此第10圖(a)為相同壓力下導入於第 一、第二筒本體11a、12a者來求取質量分率的分布圖。 The TEOS gas and oxygen in the following examples and comparative examples are introduced into the first pressure at the same pressure as in Figure 10 (a). First, the second cylinder body 11a, 12a is used to obtain the distribution map of the mass fraction.
如觀看第10圖(a)可得知般，此導入例1中，藉由形成於混合空間13之渦流，來均一地混合第一氣體與第二氣體。 As can be seen from Fig. 10 (a), in this introduction example 1, the first gas and the second gas are uniformly mixed by the vortex formed in the mixing space 13.
從流出口28a所供給之混合氣體中的TEOS氣體之質量分率分布的評估值，為±0.48%之值。 The evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas supplied from the outflow port 28a was a value of ± 0.48%.
第10圖(b)係顯示關於第一、第二筒本體11a、12a與壁面之距離，以及從第10圖(a)中去除圖樣後之相鄰接之TEOS氣體質量分率之值的階段之交界線。 Fig. 10 (b) is a stage showing the distance between the first and second cylinder bodies 11a, 12a and the wall surface, and the value of the mass fraction of TEOS gas adjacent to each other after removing the pattern from Fig. 10 (a). Border line.
第一氣體，於間隙47中流動20mm的距離後，第一、第二氣體於助跑空間48中流動42.5mm的距離，從第一筒開口45a流出並流動52.5mm的距離，第二氣體碰撞於混合容器10的壁面。 After the first gas flows a distance of 20 mm in the gap 47, the first and second gases flow a distance of 42.5 mm in the run-up space 48, flow out of the first cylinder opening 45a and flow a distance of 52.5 mm, and the second gas collides with The wall surface of the mixing container 10.
第10圖(a)係顯示通過間隙47之第一氣體較通過第二筒本體12a之第二氣體為更低流量(低壓力)時之質量分率分布，但與此相反，作為導入例2，係導入氧氣作為相同之混合器3a的第一氣體，導入TEOS氣體作為第二氣體，並且通過第二筒本體12a之第二氣體較通過間隙47之第一氣體為更低流量(低壓力)。 Figure 10 (a) shows the mass fraction distribution when the first gas passing through the gap 47 has a lower flow rate (lower pressure) than the second gas passing through the second cylinder body 12a, but the contrary, as the introduction example 2 It is the introduction of oxygen as the first gas of the same mixer 3a, the introduction of TEOS gas as the second gas, and the second gas passing through the second cylinder body 12a has a lower flow rate (low pressure) than the first gas passing through the gap 47. .
該導入例2之TEOS氣體質量分率分布的交界如第11圖(a)、(b)所示。第11圖(a)的質量分率分布，與第10圖(a)的質量分率分布為同等程度的分布，並以同等程度混合。第11圖(a)中，從流出口28a所供給之混合氣體中的TEOS氣體之質量分率分布的評估 值，為±0.42%之值。 The boundary of the TEOS gas mass fraction distribution in this introduction example 2 is shown in Figs. 11 (a) and (b). The mass fraction distribution in Fig. 11 (a) is the same distribution as the mass fraction distribution in Fig. 10 (a), and they are mixed to the same extent. Evaluation of the mass fraction distribution of TEOS gas in the mixed gas supplied from the outlet 28a in FIG. 11 (a) The value is ± 0.42%.
接著將第10圖(a)、第11圖(a)之測定質量分率分布後之第一筒本體11a縮短20mm，並與導入例1相同，使用TEOS氣體作為第一氣體，使用氧氣作為第二氣體，並算出質量分率分布。質量分率分布如第12圖(a)所示，不同值的交界與尺寸如第12圖(b)所示。第一筒本體11a之長度以外的尺寸與第10圖(b)相同。 Next, the first cylinder body 11a after measuring the mass fraction distribution in Figs. 10 (a) and 11 (a) is shortened by 20 mm, and is the same as the introduction example 1. TEOS gas is used as the first gas, and oxygen is used as the first gas. Two gases and calculate the mass fraction distribution. The mass fraction distribution is shown in Fig. 12 (a), and the boundary and size of different values are shown in Fig. 12 (b). The dimensions other than the length of the first cylinder body 11a are the same as those in FIG. 10 (b).
由於縮短第一筒本體11a，所以第12圖(a)的質量分率分布，在與第一筒本體11a平行之兩壁面中之接近於第一筒本體11a之壁面附近呈不均一，該均一性較第10圖(a)的質量分率分布差。此可考量為在形成渦流之空間之混合空間13的中央附近未配置第一筒開口45a之故。 Since the first cylinder body 11a is shortened, the mass fraction distribution in FIG. 12 (a) is uneven among the two wall surfaces parallel to the first cylinder body 11a near the wall surface of the first cylinder body 11a, which is uniform. The quality is worse than the distribution of mass fraction in Fig. 10 (a). This can be considered because the first tube opening 45a is not disposed near the center of the mixing space 13 in the space where the vortex is formed.
第一筒開口45a的適當位置，除了混合容器10的壁面之外，在將小室21的壁面與後述擋板部件44的表面設為「壁面」，並將第一、第二筒本體11a、12a延伸的方向上之形成混合容器10內的混合空間13之兩壁面間的距離之混合空間距離L設為"1"時，係位於從第一、第二筒本體11a、12a之根基側的壁面為2/5以上3/5以下之距離的範圍內。 The proper position of the first cylinder opening 45a is the wall surface of the cell 21 and the surface of the baffle member 44 described later as the "wall surface" in addition to the wall surface of the mixing container 10, and the first and second cylinder bodies 11a, 12a When the mixing space distance L of the distance between the two wall surfaces forming the mixing space 13 in the mixing container 10 in the extending direction is set to "1", the wall surface is located at the base side of the first and second cylinder bodies 11a, 12a. It is within the range of 2/5 to 3/5.
從第10圖(a)來看，混合空間13的中央，位於從小室21開離57.5mm之位置，由於對應於2/5以上3/5以下的範圍之位置為46mm以上69mm以下的範圍， 所以第10圖(a)的第一筒開口45a，從混合容器10來看位於2/5以上3/5以下之距離的範圍內，從混合空間13的中央位置來看時為範圍外。 From the perspective of Fig. 10 (a), the center of the mixing space 13 is located at a position 57.5 mm away from the cell 21. Since the position corresponding to the range of 2/5 to 3/5 is 46 mm to 69 mm, Therefore, the first cylinder opening 45a in FIG. 10 (a) is located within a range of 2/5 or more and 3/5 or less from the perspective of the mixing container 10, and is out of range when viewed from the central position of the mixing space 13.
然而，從流出口28a所供給之混合氣體中的TEOS氣體之質量分率分布的評估值，為±0.93%之值，分布值位於可判斷為第一氣體與第二氣體相對均一地混合之範圍內的值，所以流出口28a，考量到設置在與第一筒本體11a平行之兩壁面中之較遠的壁面附近之必要性等，必須因應所求取之質量分率分布的程度來選擇該配置。然而，第10圖的構成者，並不須留意此考量。 However, the evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas supplied from the outflow port 28a is a value of ± 0.93%, and the distribution value is in a range where it can be determined that the first gas and the second gas are relatively uniformly mixed. Therefore, the outflow port 28a must be selected in accordance with the degree of mass fraction distribution to be considered in consideration of the necessity of being located near the far wall surface of the two wall surfaces parallel to the first cylinder body 11a. Configuration. However, the constituents of Figure 10 need not pay attention to this consideration.
接著，於第12圖之尺寸的混合器3a中，使用氧氣作為第一氣體並使用TEOS氣體作為第二氣體時(導入例2)之質量分率分布的交界線，如第13圖(a)、(b)所示。 Next, in the mixer 3a of the size shown in FIG. 12, the boundary line of the mass fraction distribution when using oxygen as the first gas and TEOS gas as the second gas (introduction example 2) is as shown in FIG. 13 (a) , (B).
從第13圖(a)中，可得知流出口28a設置在與第一筒開口45a相面對之壁面的中央即可。從流出口28a所供給之混合氣體中的TEOS氣體之質量分率分布的評估值，為±1.04%之值，可判斷為第一氣體與第二氣體相對均一地混合。 From FIG. 13 (a), it can be seen that the outflow port 28a may be provided at the center of the wall surface facing the first tube opening 45a. The evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas supplied from the outflow port 28a is a value of ± 1.04%, and it can be determined that the first gas and the second gas are relatively uniformly mixed.
於以上所說明之混合器3、3a中，將第一氣體導入於設置在混合容器10內部之小室21，並使小室21內的第一氣體往間隙47移動，但如第4圖所示之第三實施例的 混合器3b般，亦可不設置小室21，而是在混合容器10的外部亦形成間隙47，並在混合容器10的外部將第一氣體導入於間隙47。 In the mixers 3 and 3a described above, the first gas is introduced into the small chamber 21 provided inside the mixing container 10, and the first gas in the small chamber 21 is moved toward the gap 47, but as shown in FIG. 4 Of the third embodiment Like the mixer 3b, the small chamber 21 may not be provided, but a gap 47 may be formed outside the mixing container 10, and the first gas may be introduced into the gap 47 outside the mixing container 10.
此時之第一、第二筒本體11b、12b的第一、第二筒開口45b、46b雖配置在混合容器10的內部，但間隙47亦形成於混合容器10的外部，所以於第一、第二筒本體11b、12b中，亦包含混合容器10的外部中形成間隙47之部分。 At this time, although the first and second cylinder openings 45b and 46b of the first and second cylinder bodies 11b and 12b are arranged inside the mixing container 10, the gap 47 is also formed outside the mixing container 10. The second cylinder bodies 11 b and 12 b also include a portion of the outside of the mixing container 10 that forms the gap 47.
如上述第三實施例的混合器3b般，第一、第二筒本體11b、12b於混合容器10的外部亦延伸時，如第5圖所示之第四實施例的混合器3c般，亦可使第一筒本體11c位於混合容器10的內部與外部，使第一筒開口45c位於混合容器10的內部，另一方面，將第二筒本體12c***於第一筒本體11c的外部部分，使第二筒開口46c位於與混合容器10的壁為相同之位置或位於混合容器10的壁的外側。 Like the mixer 3b of the third embodiment, when the first and second cylinder bodies 11b, 12b also extend outside the mixing container 10, like the mixer 3c of the fourth embodiment shown in FIG. 5, The first tube body 11c can be located inside and outside the mixing container 10, the first tube opening 45c can be located inside the mixing container 10, and on the other hand, the second tube body 12c is inserted into the outer portion of the first tube body 11c. The second tube opening 46 c is located at the same position as the wall of the mixing container 10 or outside the wall of the mixing container 10.
此混合器3c的質量分率分布如第14圖所示。第一氣體為TEOS氣體，第二氣體為氧氣(導入例1)。由於第一筒開口45c位於2/5以上3/5以下的範圍內，所以可良好地混合而成為均一混合。 The mass fraction distribution of this mixer 3c is shown in FIG. The first gas is TEOS gas and the second gas is oxygen (Introduction Example 1). Since the first tube opening 45c is in the range of 2/5 or more and 3/5 or less, it can be well mixed and uniformly mixed.
第一~第四實施例之混合器3、3a~3c中，流出口28、28a係設置在虛擬筒29與混合容器10的壁面所交叉之部分14的外側，但第6圖之第五實施例的混合器3d，該流出口28，於第2圖之第一實施例的混合器3中，係以使全部或至少一部分，和將第一筒本體11d的外周側面朝向第一筒本體11d延伸之方向虛擬地延長之虛擬筒29、與混合容器10的壁面所交叉之部分的壁面之交叉部分14重疊之方式來配置。 In the mixers 3, 3a to 3c of the first to fourth embodiments, the outflow ports 28, 28a are provided outside the portion 14 where the virtual cylinder 29 and the wall surface of the mixing container 10 intersect, but the fifth embodiment of FIG. 6 The mixer 3d of the example, and the outflow port 28, are all or at least a part of the mixer 3 of the first embodiment of FIG. 2 so that the outer side surface of the first cylinder body 11d faces the first cylinder body 11d. The extending direction of the virtual cylinder 29 which is virtually extended, and the intersection part 14 of the wall surface of the part which cross | intersects the wall surface of the mixing container 10 are arrange | positioned so that it may overlap.
此外，第五實施例之混合器3d中，於第一筒開口45d與流出口28之間配置有擋板部件44。 In the mixer 3d of the fifth embodiment, a baffle member 44 is disposed between the first cylinder opening 45d and the outflow port 28.
擋板部件44，係位於第一筒開口45d與流出口28之間並且位於第二筒開口46d與流出口28之間，從第二筒開口46d被釋出且直行於與第二筒本體12d延伸之方向平行的方向之第二氣體，係碰撞於擋板部件44的表面，並於沿著擋板部件44的表面之方向擴展。 The baffle member 44 is located between the first tube opening 45d and the outflow port 28 and between the second tube opening 46d and the outflow port 28. The baffle member 44 is released from the second tube opening 46d and travels directly with the second tube body 12d. The second gas extending in a direction parallel to the direction hits the surface of the baffle member 44 and spreads in a direction along the surface of the baffle member 44.
從第一筒開口45d被釋出且直行於與第一筒本體11d延伸之方向平行的方向之第一氣體，藉由沿著擋板部件44的表面所擴展之第二氣體，於沿著擋板部件44的表面之方向上流動，或是碰撞於擋板部件44的表面，並於沿著擋板部件44的表面之方向流動，所以從第一筒開口45d所釋出並直行之第一、第二氣體，不會流入於流出口28而在混合空間13混合，第一氣體與第二氣體均一地混合後之混合氣體，流入於流出口28且被供給至釋出裝置19。 The first gas released from the first cylinder opening 45d and traveling straight in a direction parallel to the direction in which the first cylinder body 11d extends, and the second gas expanded along the surface of the baffle member 44 passes along the barrier. The plate member 44 flows in the direction of the surface or collides with the surface of the baffle member 44 and flows in the direction along the surface of the baffle member 44. Therefore, the first one released from the first cylinder opening 45d and traveling straight The second gas does not flow into the outflow port 28 and is mixed in the mixing space 13. The mixed gas in which the first gas and the second gas are uniformly mixed flows into the outflow port 28 and is supplied to the release device 19.
第一~第四實施例之混合器3、3a~3c中，流出口28、28a係設置在混合容器10的壁面中之交叉部分14外側的壁面。交叉部分14外側的壁面，於混合容器10的壁面中，包含第一筒開口45所直接面對之壁面以外的壁面。 In the mixers 3, 3a to 3c of the first to fourth embodiments, the outflow ports 28, 28a are provided on the wall surface outside the intersection portion 14 of the wall surfaces of the mixing container 10. The wall surface on the outside of the crossing portion 14 includes the wall surface of the mixing container 10 other than the wall surface directly facing the first tube opening 45.
第一筒開口45、45a~45c中，於第一筒開口45、45a~45c之與混合容器10的壁面之間，並未配置擋板部件44。 Among the first cylinder openings 45 and 45a to 45c, a baffle member 44 is not disposed between the first cylinder openings 45 and 45a to 45c and the wall surface of the mixing container 10.
當第一~第四實施例之混合器3、3a~3c的混合容器10與第五實施例之混合器3d的混合容器10為相同大小時，相較於第一~第四實施例之第一筒開口45、45a~45c與第一筒開口45、45a~45c所面對之壁面之間的距離，第五實施例之第一筒開口45d與擋板部件44之間的距離更短。 When the mixing container 10 of the mixers 3, 3a to 3c of the first to fourth embodiments and the mixing container 10 of the mixer 3d of the fifth embodiment are the same size, compared to the first to fourth embodiments The distance between a cylinder opening 45, 45a to 45c and the wall surface facing the first cylinder opening 45, 45a to 45c, the distance between the first cylinder opening 45d and the baffle member 44 in the fifth embodiment is shorter.
在欲增大擋板部件44與第五實施例之第一筒開口45d之間的距離時，擋板部件44接近於流出口28，使流出口28附近的傳導變小，因而使排出時的壓力損耗增大。 When the distance between the baffle member 44 and the first cylinder opening 45d of the fifth embodiment is to be increased, the baffle member 44 is close to the outflow port 28, so that the conduction in the vicinity of the outflow port 28 is reduced, and the Increased pressure loss.
因此，係以不會使壓力損耗增大之方式來求取擋板部件44的大小、位置、流出口28的大小、位置等即可。 Therefore, the size and position of the baffle member 44 and the size and position of the outflow port 28 may be determined so as not to increase the pressure loss.
接著說明本發明之比較例。 Next, a comparative example of the present invention will be described.
如第7圖之第一比較例的混合器103a與第8圖之第 二比較例的混合器103b般，係使第一筒開口145a、145b與第二筒開口146a、146b位於同一平面上，製作出不具有助跑空間之混合器103a、103b，並算出質量分率分布。 The mixer 103a of the first comparative example shown in FIG. 7 and Like the mixer 103b of the two comparative examples, the first cylinder openings 145a and 145b and the second cylinder openings 146a and 146b are located on the same plane, and the mixers 103a and 103b without running space are produced, and the mass fraction distribution is calculated. .
第7圖的混合器103a中，第一筒本體111a與第二筒本體112a於混合容器10內未突出，第8圖的混合器103b中，第一筒本體111b與第二筒本體112b於混合容器10內突出，就此點乃成為不同構造，不具有助跑空間之點則相同。 In the mixer 103a of FIG. 7, the first tube body 111a and the second tube body 112a do not protrude in the mixing container 10. In the mixer 103b of FIG. 8, the first tube body 111b and the second tube body 112b are mixed. The inside of the container 10 protrudes. At this point, it has a different structure, and the point without a run-up space is the same.
第7圖、第8圖之第一、第二比較例的混合器103a、103b中，第一氣體使用TEOS氣體，第二氣體使用氧氣。 In the mixers 103 a and 103 b of the first and second comparative examples of FIGS. 7 and 8, TEOS gas is used as the first gas, and oxygen is used as the second gas.
第一比較例的混合器103a之TEOS氣體的質量分率分布如第15圖所示，第二比較例的混合器103b之TEOS氣體的質量分率分布如第16圖所示。 The mass fraction distribution of the TEOS gas in the mixer 103a of the first comparative example is shown in FIG. 15, and the mass fraction distribution of the TEOS gas in the mixer 103b of the second comparative example is shown in FIG. 16.
不論何者，第一氣體均未從間隙47的全周中均一地釋出，可得知於混合容器10內未均一地混合。 In any case, the first gas was not uniformly released from the entire circumference of the gap 47, and it was found that the first gas was not uniformly mixed in the mixing container 10.
從第一、第二比較例的混合器103a、103b供給至釋出裝置19之混合氣體中的TEOS氣體，第15圖之第一比較例的混合器103a之混合氣體的TEOS氣體之質量分率分布的評估值，為±3.36%之值，第16圖之第二比較例的混合器103b之TEOS氣體之質量分率分布的評估值，為±0.69%之值。 The mass fraction of TEOS gas in the mixed gas supplied from the mixers 103a and 103b of the first and second comparative examples to the release device 19, and the mixed gas of the mixer 103a of the first comparative example in FIG. 15 The evaluation value of the distribution is a value of ± 3.36%, and the evaluation value of the mass fraction distribution of the TEOS gas of the mixer 103b of the second comparative example in FIG. 16 is a value of ± 0.69%.
接著如第9圖之第三比較例的混合器103c般，係使第一筒本體111c於混合容器10的內部突出，並使第一筒開口145c位於混合容器10的內部，使第二筒本體112c從第一筒本體111c的第一筒開口145c於混合容器10的內部突出，並且使第二筒開口146c位於較第一筒開口145c更接近所面對之壁面。 Next, like the mixer 103c of the third comparative example in FIG. 9, the first tube body 111c protrudes inside the mixing container 10, and the first tube opening 145c is located inside the mixing container 10, so that the second tube body 112c protrudes from the first cylinder opening 145c of the first cylinder body 111c inside the mixing container 10, and the second cylinder opening 146c is located closer to the wall surface facing than the first cylinder opening 145c.
第17圖(a)、(b)，係於第三比較例的混合器103c中，使用TEOS氣體作為第一氣體，使用氧氣作為第二氣體時之TEOS氣體的質量分率分布。 (A) and (b) of FIG. 17 are the mass fraction distributions of the TEOS gas when the TEOS gas is used as the first gas and the oxygen is used as the second gas in the mixer 103c of the third comparative example.
第17圖中，於第二筒開口146c與接近於第二筒開口146c之壁面之間，形成有氧氣的渦流，從間隙47供給至該部分之TEOS氣體，被氧氣的渦流所擠壓而難以從間隙47流出，可得知第一、第二氣體未均一地混合。供給至釋出裝置19之混合氣體的TEOS氣體之質量分率分布的評估值，為±2.5%之值。 In FIG. 17, a vortex of oxygen is formed between the second cylinder opening 146 c and a wall surface close to the second cylinder opening 146 c. The TEOS gas supplied to the part from the gap 47 is squeezed by the vortex of oxygen, which makes it difficult. It can be seen from the gap 47 that the first and second gases are not uniformly mixed. The evaluation value of the mass fraction distribution of the TEOS gas of the mixed gas supplied to the release device 19 was a value of ± 2.5%.
第18圖(a)、(b)，與第17圖(a)、(b)相反，為使用氧氣作為第一氣體，使用TEOS氣體作為第二氣體時之TEOS氣體的質量分率分布。 Figs. 18 (a) and (b) are contrary to Figs. 17 (a) and (b). The mass fraction distribution of TEOS gas when oxygen is used as the first gas and TEOS gas is used as the second gas.
於間隙47的前端與接近於間隙47的前端之壁面之間，形成有從間隙47的前端所供給之氧氣的渦流，於突出之第二筒本體112c的周圍，形成複雜的質量分率分布。其結果為TEOS氣體與氧氣並未以與對向於第二筒開口146c之壁面垂直地交叉之方式入射，而不均一地混 合。 Between the front end of the gap 47 and a wall surface close to the front end of the gap 47, a vortex of oxygen supplied from the front end of the gap 47 is formed, and a complicated mass fraction distribution is formed around the protruding second cylinder body 112c. As a result, the TEOS gas and oxygen were not incident perpendicularly to the wall surface facing the second tube opening 146c, and were not uniformly mixed. Together.
混合氣體中的TEOS氣體之質量分率分布的評估值，為±1.8%之值。 The evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas is a value of ± 1.8%.
從以上的質量分率分布圖與該評估值中，當混合具有流量差之兩種氣體時，本發明之混合器3、3a~3d中，不論將高流量(高壓力)的氣體與低流量(低壓力)的氣體中之任一方作為第一氣體，將另一方作為第二氣體，均可均一地混合。 From the above mass fraction distribution diagram and the evaluation value, when mixing two gases having a difference in flow rate, the mixers 3, 3a to 3d of the present invention, regardless of whether a high flow rate (high pressure) gas and a low flow rate are mixed Either one of the (low pressure) gases is used as the first gas, and the other is used as the second gas, and they can be mixed uniformly.
此外，以上所說明之本發明之混合器3、3a~3d的第一、第二筒本體11、11a~11d、12、12a~12d，該剖面呈圓形，但亦可為多角形或正多角形。 In addition, the first and second cylinder bodies 11, 11a to 11d, 12, 12a to 12d of the mixers 3, 3a to 3d of the present invention described above have a circular cross section, but may also be polygonal or regular Polygonal.
藉由以上比較例一~三之質量分率分布的計算結果，於不具有助跑空間48之混合器103a~103c中，可得知即使使用第一筒本體111a~111c與第二筒本體112a~112c，第一、第二氣體亦不會均一地混合，但即使設置助跑空間48，亦可考量到第一、第二氣體於助跑空間48中流動之距離短時，亦不會均一地混合。最適之助跑空間48的長度，由於會受到所使用之混合容器10內部的尺寸，或是第一、第二筒本體11、11a~11d、12、12a~12d的粗度或長度所影響，所以當混合容器10的大小等改變時，可重新算出最適之助跑空間48的長度。 Based on the calculation results of the mass fraction distributions of Comparative Examples 1 to 3 above, in the mixers 103a to 103c that do not have the run-up space 48, it can be known that even if the first barrel body 111a to 111c and the second barrel body 112a to 112c, the first and second gases are not mixed uniformly, but even if the run-up space 48 is provided, it can be considered that when the distance of the first and second gases flowing in the run-up space 48 is short, they will not be mixed uniformly. The optimal length of the run-up space 48 is affected by the internal size of the mixing container 10 used, or the thickness or length of the first and second cylinder bodies 11, 11a-11d, 12, 12a-12d. When the size or the like of the mixing container 10 is changed, the length of the optimal running-up space 48 may be newly calculated.
此外，當混合容器10為長方體時，第一筒開 口45、45a~45d的適當位置，在將混合容器10的壁面、小室21的壁面、擋板部件44的表面設為「壁面」，並將第一、第二筒本體11、11a~11d、12、12a~12d延伸的方向上之形成混合容器10內的混合空間13之兩壁面間的距離之混合空間距離L設為"1"時，係位於從第一、第二筒本體11、11a~11d、12、12a~12d之根基側的壁面為2/5以上3/5以下之距離的範圍內。於第一~第五實施例之混合器3、3a~3d的混合容器10內，於混合空間13形成穩定的渦流，並可算出第一、第二氣體均一地混合之質量分率分布。 In addition, when the mixing container 10 is a rectangular parallelepiped, the first tube is opened At appropriate positions of the ports 45, 45a to 45d, the wall surface of the mixing container 10, the wall surface of the cell 21, and the surface of the baffle member 44 are set to "wall surfaces", and the first and second cylinder bodies 11, 11a to 11d, When the mixing space distance L of the distance between the two wall surfaces forming the mixing space 13 in the mixing container 10 in the extending direction of 12, 12a to 12d is set to "1", it is located from the first and second cylinder bodies 11, 11a The wall surface on the root side of ~ 11d, 12, 12a ~ 12d is within a distance of 2/5 or more and 3/5 or less. In the mixing vessels 10 of the mixers 3, 3a to 3d of the first to fifth embodiments, a stable vortex is formed in the mixing space 13, and the mass fraction distribution of the first and second gases being uniformly mixed can be calculated.
再者，助跑空間48在第一、第二氣體所流動之方向上的長度，當設為混合容器10之與第一、第二筒本體11、11a~11d、12、12a~12d延伸的方向平行之邊的長度之1/5以上時，可算出第一、第二氣體均一地混合之分布。 In addition, the length of the run-up space 48 in the direction in which the first and second gases flow is assumed to be the direction in which the mixing container 10 extends with the first and second cylinder bodies 11, 11a to 11d, 12, 12a to 12d. When the length of the parallel side is more than 1/5, the distribution of the first and second gases mixed uniformly can be calculated.
關於第一筒開口45、45a~45d與所面對之壁面之間的距離，該最適值，由於會受到所使用之混合容器10內部的尺寸，或是第一、第二筒本體11、11a~11d、12、12a~12d的粗度或長度所影響，所以當混合容器10的大小等改變時，可重新算出最適的距離值。 Regarding the distance between the openings 45, 45a to 45d of the first cylinder and the facing wall surface, the optimum value is due to the internal size of the mixing container 10 used, or the first and second cylinder bodies 11, 11a. The thickness or length of ~ 11d, 12, 12a ~ 12d is affected, so when the size and the like of the mixing container 10 are changed, the optimum distance value can be calculated again.
將與混合空間距離L垂直之方向上的長度且係第一筒本體11、11a~11d的外周與混合容器10的壁面之間的距離，設為混合空間13的寬度時，該寬度的最小值，較佳為第一筒開口45、45a~45d的直徑(內徑)D之 2倍以上的長度，所以在因尺寸變更而使混合空間13之寬度的最小值未達第一筒開口45、45a~45d的直徑D之2倍時，可重新算出尺寸。 When the length in the direction perpendicular to the distance L of the mixing space and the distance between the outer periphery of the first cylinder body 11, 11 a to 11 d and the wall surface of the mixing container 10 is the width of the mixing space 13, the minimum value of the width , Preferably the diameter (inner diameter) D of the first cylinder opening 45, 45a to 45d The length is more than 2 times, so when the minimum value of the width of the mixing space 13 is less than 2 times the diameter D of the first cylinder openings 45, 45a to 45d due to the size change, the size can be recalculated.
上述實施例中，係在混合器3、3a~3d中混合TEOS氣體與氧氣，但亦可混合其他種類的氣體。尤其在藉由昇華或蒸發所生成之原料氣體、與常溫下為氣態物質之氣體中，可將一方的氣體設為第一氣體，另一方的氣體設為第二氣體。 In the above embodiment, TEOS gas and oxygen are mixed in the mixers 3, 3a to 3d, but other types of gases may be mixed. In particular, among the raw material gas generated by sublimation or evaporation and the gas that is a gaseous substance at normal temperature, one of the gases may be a first gas and the other may be a second gas.
此外，上述真空處理裝置2中，係使用電漿來形成薄膜，但亦包含不使用電漿來形成薄膜之真空處理裝置。此外，本發明亦包含不形成薄膜，而是進行蝕刻或表面處理等之真空處理之真空處理裝置。 In addition, the vacuum processing apparatus 2 described above uses a plasma to form a thin film, but also includes a vacuum processing apparatus that does not use a plasma to form a thin film. In addition, the present invention also includes a vacuum processing apparatus that does not form a thin film but performs vacuum processing such as etching or surface treatment.
上述各實施例1~5之第一筒本體11、11a~11d與第二筒本體12、12a~12d為非接觸，但亦可使不會導致間隙47中所流動之第一氣體的流動紊亂之程度的較小間隔材，密著於第一筒本體11、11a~11d的內周側面與第二筒本體12、12a~12d的外周側面而配置。 The first cylinder body 11, 11 a to 11 d and the second cylinder body 12, 12 a to 12 d of each of the foregoing embodiments 1 to 5 are non-contact, but the flow of the first gas flowing in the gap 47 may not be disturbed. The smaller spacers are arranged in close contact with the inner peripheral side surfaces of the first tube body 11 and 11a to 11d and the outer peripheral side surfaces of the second tube body 12 and 12a to 12d.
在混合氣體中的TEOS氣體之質量分率分布的評估值為±41.8%之混合器中，使薄膜形成於基板表面時，所形成之薄膜的膜厚分布極差，已到達無法使用之程度。 In a mixer with an evaluation value of the mass fraction distribution of TEOS gas in the mixed gas of ± 41.8%, when the thin film is formed on the substrate surface, the film thickness distribution of the formed thin film is extremely poor and has reached an unusable level.
此外，評估值為±7.4%之混合器中，因應評估值的大小之面內膜厚分布，該值惡化。 In addition, in a mixer with an evaluation value of ± 7.4%, the in-plane film thickness distribution according to the magnitude of the evaluation value deteriorated.
另一方面，評估值為±0.5%以下之混合器中， 因應評估值的大小之面內膜厚分布已消失，可考量為對於膜厚分布造成影響之因素並非評估值的大小，而是其他因素。 On the other hand, in a mixer with an evaluation value of ± 0.5% or less, The in-plane film thickness distribution according to the value of the evaluation value has disappeared. It can be considered that the factor that affects the film thickness distribution is not the size of the evaluation value, but other factors.
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