TWI663045B - Coating method for protecting film - Google Patents
Coating method for protecting film Download PDFInfo
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- TWI663045B TWI663045B TW104124945A TW104124945A TWI663045B TW I663045 B TWI663045 B TW I663045B TW 104124945 A TW104124945 A TW 104124945A TW 104124945 A TW104124945 A TW 104124945A TW I663045 B TWI663045 B TW I663045B
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- wafer
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- 238000000576 coating method Methods 0.000 title claims abstract description 22
- 229920005989 resin Polymers 0.000 claims abstract description 170
- 239000011347 resin Substances 0.000 claims abstract description 170
- 230000001681 protective effect Effects 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 70
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000011253 protective coating Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 120
- 230000004048 modification Effects 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 16
- 239000007788 liquid Substances 0.000 description 15
- 210000000078 claw Anatomy 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laminated Bodies (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明的課題為一種不論晶圓的表面形狀為何，皆將保護被膜均一地形成在晶圓的表面上。解決手段是將保護被膜的被覆方法藉由樹脂片載置步驟、貼附步驟與硬化步驟來構成，而在晶圓的表面上形成對應樹脂片的厚度的保護被膜。其中該樹脂片載置步驟是以薄膜狀的樹脂片將晶圓的整個表面區域覆蓋，該貼附步驟是使已在樹脂片載置步驟中覆蓋了晶圓的整個表面區域的樹脂片密接在表面而貼附樹脂片，該硬化步驟是使經過貼附步驟的樹脂片硬化。 The subject of the present invention is to uniformly form a protective coating on the surface of a wafer regardless of the surface shape of the wafer. The solution is to constitute a coating method of the protective film by a resin sheet placing step, an attaching step, and a curing step, and form a protective film corresponding to the thickness of the resin sheet on the surface of the wafer. The resin sheet mounting step is to cover the entire surface area of the wafer with a thin-film resin sheet. The attaching step is to closely contact the resin sheet that has covered the entire surface area of the wafer in the resin sheet mounting step. A resin sheet is attached on the surface, and this hardening step is to harden the resin sheet that has passed through the attaching step.
Description
本發明是有關於將晶圓表面被覆之保護被膜的被覆方法，尤其是有關於將表面形成有凸塊(bump)等凸部的晶圓被覆之保護被膜的被覆方法。 The present invention relates to a coating method for a protective film covering a surface of a wafer, and more particularly to a coating method for a protective film coating a wafer having a convex portion such as a bump formed on a surface thereof.
在沿著分割預定線照射雷射光線以分割半導體晶圓或光元件晶圓(以下，簡稱為晶圓)的雷射加工裝置中，將雷射光線照射在晶圓表面後，被照射的區域上會出現作為溶融物的碎片。為了防止此碎片再度附著於晶圓的表面上，已有將液狀樹脂等保護被膜被覆在晶圓表面上的方法被提出(參照例如專利文獻1)。又，保護被膜的具體被覆方法之中，已有一種稱為旋轉塗佈(spin coating)之方法被提出，該方法是對被保持在旋轉台的晶圓的中心部滴下預定量的液狀樹脂，並以預定速度讓旋轉台旋轉(參照專利文獻2至專利文獻4)。此外，也有為了使保護被膜的膜厚能夠均一，而將旋轉塗佈實施複數次的方法被提出(參照專利文獻3與專利文獻4)。 In a laser processing device that irradiates laser light along a predetermined division line to divide a semiconductor wafer or an optical element wafer (hereinafter simply referred to as a wafer), an area to be irradiated with the laser light after being irradiated onto the wafer surface Fragments will appear as a melt. In order to prevent this debris from adhering to the surface of the wafer again, a method has been proposed in which a protective film such as a liquid resin is coated on the surface of the wafer (see, for example, Patent Document 1). In addition, among specific coating methods for protecting a film, a method called spin coating has been proposed, which is a method in which a predetermined amount of a liquid resin is dropped on a center portion of a wafer held on a rotary table. And rotate the turntable at a predetermined speed (see Patent Documents 2 to 4). In addition, in order to make the film thickness of the protective film uniform, a method of performing spin coating a plurality of times has been proposed (see Patent Documents 3 and 4).
專利文獻1：日本專利特開2004-188475號公報 Patent Document 1: Japanese Patent Laid-Open No. 2004-188475
專利文獻2：日本專利特開2006-198450號公報 Patent Document 2: Japanese Patent Laid-Open No. 2006-198450
專利文獻3：日本專利特開2008-006379號公報 Patent Document 3: Japanese Patent Laid-Open No. 2008-006379
專利文獻4：日本專利特開2014-060269號公報 Patent Document 4: Japanese Patent Laid-Open No. 2014-060269
但是，當晶圓的表面的元件上形成有凸塊等凸部時，即使讓保持有晶圓的旋轉台旋轉，而以其離心力使液狀樹脂朝向外周部流動，也會被表面的凸部妨礙，很難將液狀樹脂均一地塗佈在晶圓的表面上。當保護被膜的膜厚不均一時，恐有在保護被膜的較薄部分上對碎片的保護效果變小，而使附著在保護被膜的較薄部分上的碎片對晶圓造成影響之疑慮。又，如專利文獻3與專利文獻4所示，雖然也考慮到將旋轉塗佈實施複數次的作法，但由於液狀樹脂為水溶性樹脂，即使在使液狀樹脂乾燥過後再塗佈液狀樹脂，仍然會導致最初被覆好的保護被膜溶解，而不一定能夠均一地形成保護被膜。 However, when convex parts such as bumps are formed on the elements on the surface of the wafer, even if the rotary table holding the wafer is rotated, the liquid resin is caused to flow toward the outer peripheral part by its centrifugal force. As a result, it is difficult to uniformly apply the liquid resin on the surface of the wafer. When the film thickness of the protective film is not uniform, there is a concern that the protection effect of the fragments on the thinner part of the protective film becomes smaller, and the chips attached to the thinner part of the protective film may have an influence on the wafer. Further, as shown in Patent Documents 3 and 4, although a method of performing spin-coating several times is also considered, since the liquid resin is a water-soluble resin, the liquid resin is applied even after the liquid resin is dried. Resin will still cause the initially covered protective film to dissolve, and the protective film may not necessarily be uniformly formed.
本發明是有鑒於所述問題點而作成的發明，其目的為提供一種不論晶圓的表面形狀為何，皆能將保護被膜均一地形成在晶圓的表面上的保護被膜的被覆方法。 The present invention has been made in view of the problems described above, and an object thereof is to provide a coating method for a protective film that can uniformly form a protective film on the surface of a wafer regardless of the surface shape of the wafer.
本發明的保護被膜的被覆方法是以樹脂在板狀 的晶圓的表面形成保護被膜之保護被膜的被覆方法，特徵在於其是由下列步驟所構成：樹脂片載置步驟，以薄膜狀的樹脂片將表面的整個面覆蓋；貼附步驟，使已在樹脂片載置步驟中覆蓋了表面的整個面的樹脂片密接於表面而貼附樹脂片；以及硬化步驟，使經過貼附步驟的樹脂片硬化。 The method for covering the protective film of the present invention is to form a resin in a plate shape. A coating method for forming a protective film on the surface of a wafer is characterized in that it is composed of the following steps: a resin sheet mounting step, covering the entire surface of the surface with a thin-film resin sheet; and an attaching step, In the resin sheet placing step, the resin sheet covering the entire surface of the surface is closely adhered to the surface to attach the resin sheet; and the hardening step is performed to harden the resin sheet that has passed through the attaching step.
依據此構成，能在將樹脂片載置於晶圓的表面後，藉由將樹脂片密接在晶圓的整個表面區域，而在晶圓的表面形成對應樹脂片的厚度的保護被膜。據此，不論晶圓的表面形狀為何，例如，即使是表面上形成有凸塊等凸部的晶圓，都能在晶圓的整個表面區域形成均一的厚度的保護被膜。 According to this configuration, after placing the resin sheet on the surface of the wafer, the resin sheet can be closely adhered to the entire surface area of the wafer to form a protective film corresponding to the thickness of the resin sheet on the surface of the wafer. Accordingly, regardless of the surface shape of the wafer, for example, even a wafer having convex portions such as bumps formed on the surface, a protective film having a uniform thickness can be formed over the entire surface area of the wafer.
依據本發明，藉由使構成保護被膜的樹脂片密接在晶圓的表面，不論晶圓的表面形狀為何，皆能在晶圓的表面上均一地形成保護被膜。 According to the present invention, by making the resin sheet constituting the protective film adhere to the surface of the wafer, the protective film can be uniformly formed on the surface of the wafer regardless of the shape of the surface of the wafer.
1‧‧‧保護被膜形成裝置 1‧‧‧ Protective film forming device
10‧‧‧樹脂片 10‧‧‧ resin sheet
11‧‧‧剝離片 11‧‧‧ peeling sheet
12‧‧‧保護樹脂 12‧‧‧Protective resin
2‧‧‧保持台 2‧‧‧ holding station
20‧‧‧電動馬達 20‧‧‧ Electric motor
21‧‧‧驅動軸 21‧‧‧Drive shaft
3‧‧‧夾持手段 3‧‧‧ clamping means
30‧‧‧支臂 30‧‧‧arm
31‧‧‧夾持機構 31‧‧‧Clamping mechanism
32‧‧‧驅動機構 32‧‧‧Drive mechanism
33‧‧‧固定支撐部 33‧‧‧Fixed support
34‧‧‧可動支撐部 34‧‧‧ movable support
4‧‧‧載置手段 4‧‧‧ placement means
40‧‧‧樹脂片保持手段 40‧‧‧Resin sheet holding means
41‧‧‧移動手段 41‧‧‧Movement
42‧‧‧導軌 42‧‧‧rail
43‧‧‧移動塊 43‧‧‧moving blocks
44‧‧‧支臂部 44‧‧‧ Arm
45、45a、45b‧‧‧保持爪 45, 45a, 45b ‧‧‧ holding claws
5‧‧‧空氣噴射噴嘴 5‧‧‧air jet nozzle
50‧‧‧空氣供給源 50‧‧‧Air supply source
5a‧‧‧垂直部 5a‧‧‧Vertical
5b‧‧‧水平部 5b‧‧‧Horizontal
51‧‧‧旋轉馬達 51‧‧‧rotating motor
6‧‧‧風扇 6‧‧‧fan
7‧‧‧加熱器 7‧‧‧ heater
8‧‧‧水噴射噴嘴 8‧‧‧ water jet nozzle
B‧‧‧凸部 B‧‧‧ convex
F‧‧‧環形框架 F‧‧‧Ring frame
T‧‧‧保持膠帶 T‧‧‧holding tape
W‧‧‧晶圓 W‧‧‧ Wafer
圖1是表示本實施形態之保護被膜的被覆方法所適用的晶圓之一例的圖。 FIG. 1 is a diagram showing an example of a wafer to which a protective film coating method according to this embodiment is applied.
圖2是表示在本實施形態之保護被膜的被覆方法中所使用的樹脂片之一例的圖。 FIG. 2 is a diagram showing an example of a resin sheet used in the method for coating a protective film according to the embodiment.
圖3是應用在本實施形態之保護被膜的被覆方法的保護膜形成裝置之示意圖。 FIG. 3 is a schematic diagram of a protective film forming apparatus applied to a method for coating a protective film according to this embodiment.
圖4是表示本實施形態的樹脂片載置步驟之一例的圖。 FIG. 4 is a diagram showing an example of a resin sheet placing step in the present embodiment.
圖5是表示本實施形態的貼附步驟之一例的圖。 FIG. 5 is a diagram showing an example of a sticking procedure in the present embodiment.
圖6是表示本實施形態的硬化步驟之一例的圖。 FIG. 6 is a diagram showing an example of a curing step in the present embodiment.
圖7是表示第1變形例的貼附步驟的圖。 FIG. 7 is a diagram showing a sticking procedure according to a first modification.
圖8是表示第2變形例的貼附步驟的圖。 FIG. 8 is a diagram illustrating a step of attaching a second modification.
以下，參照附加圖式說明本發明的實施形態。圖1是表示本實施形態之保護被膜的被覆方法所適用的晶圓之一例的圖。圖2是表示在本實施形態之保護被膜的被覆方法中所使用的樹脂片之一例的圖。圖3是適用在本實施形態之保護被膜的被覆方法的保護被膜形成裝置之示意圖。在本實施形態中，是針對將保護被膜形成裝置應用在雷射加工裝置之例進行說明。再者，關於本實施形態的保護被膜形成裝置，並非受限於以下所示的構成，並可適度地變更。保護被膜形成裝置，只要是可在晶圓表面貼附樹脂片，而在晶圓的表面形成保護被膜之構成，則如何被構成均可。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram showing an example of a wafer to which a protective film coating method according to this embodiment is applied. FIG. 2 is a diagram showing an example of a resin sheet used in the method for coating a protective film according to the embodiment. FIG. 3 is a schematic diagram of a protective film forming apparatus applied to the method for coating a protective film according to this embodiment. In this embodiment, an example in which a protective film forming apparatus is applied to a laser processing apparatus will be described. In addition, the protective-film-forming-apparatus of this embodiment is not limited to the structure shown below, and can be changed suitably. The protective film forming device may be configured in any manner as long as it has a configuration in which a resin sheet can be attached to the surface of the wafer and a protective film is formed on the surface of the wafer.
首先，說明適用於本實施形態的晶圓。如圖1所示，晶圓W具有圓形狀，且晶圓W的表面會藉由排列成格子狀的分割預定線(圖未示)而劃分出複數個元件區域。各元件區域中形成有複數個凸塊等半球狀的凸部B。晶圓W是將表面朝上，並透過被貼附在背面側的保持膠帶T被保持在環狀框架F上。再者，晶圓W不受限於矽晶圓、砷化鎵等半導 體晶圓，也可以是封裝基板、玻璃、藍寶石類的無機材料基板。又，形成於晶圓W表面的凸部B不受限於凸塊。例如，也可以是以下的構成：以矽樹脂保護形成於氧化鋁陶瓷基板上的光元件之表面，且在矽樹脂的表面具備複數個凸部B。此外，凸部B也不一定要被形成。 First, a wafer applied to this embodiment will be described. As shown in FIG. 1, the wafer W has a circular shape, and the surface of the wafer W is divided into a plurality of element regions by predetermined division lines (not shown) arranged in a grid shape. Hemispherical protrusions B such as a plurality of bumps are formed in each element region. The wafer W is held on the ring frame F with the surface facing upward, and is held by the holding tape T attached to the back side. Furthermore, the wafer W is not limited to semiconductors such as silicon wafers and gallium arsenide. The bulk wafer may also be a package substrate, glass, or a sapphire-based inorganic material substrate. The convex portion B formed on the surface of the wafer W is not limited to a bump. For example, a configuration may be adopted in which the surface of the optical element formed on the alumina ceramic substrate is protected with a silicone resin, and a plurality of convex portions B are provided on the surface of the silicone resin. In addition, the convex portion B is not necessarily formed.
然而，在上述之晶圓W的表面上形成保護被膜時，一般而言，會採用旋轉塗佈。在旋轉塗佈中，是將液狀樹脂滴下到晶圓W的表面中央，並將保持晶圓W的保持台高速旋轉。藉此，會在液狀樹脂上形成離心力，將液狀樹脂從晶圓W的中心向外周擴散。其結果，可將液狀樹脂塗佈在晶圓W的整個表面區域。不過，在旋轉塗佈中，會由於保持台2的高速旋轉，而將大量的液狀樹脂(更具體而言，是已滴下在晶圓W的表面中央的液狀樹脂中的9成左右)吹走，被吹走的液狀樹脂會被廢棄處理。像這樣在藉由旋轉塗布進行的保護被膜的形成中，液狀樹脂的節約早已成為課題。 However, when a protective film is formed on the surface of the wafer W, spin coating is generally used. In spin coating, a liquid resin is dropped onto the center of the surface of the wafer W, and a holding table holding the wafer W is rotated at high speed. Thereby, a centrifugal force is formed on the liquid resin, and the liquid resin is diffused from the center of the wafer W to the outer periphery. As a result, the liquid resin can be applied to the entire surface area of the wafer W. However, in spin coating, a large amount of liquid resin is caused by the high-speed rotation of the holding table 2 (more specifically, about 90% of the liquid resin that has been dropped on the center of the surface of the wafer W). If blown away, the liquid resin blown away will be discarded. As described above, in the formation of a protective film by spin coating, saving of a liquid resin has been a problem for a long time.
於是，本發明申請人曾想到將形狀配合晶圓W的樹脂片10(參照圖2)貼附在晶圓W的表面，而將構成保護被膜的保護樹脂12(參照圖2)轉移到晶圓W的表面之方法。藉此，能夠形成對應樹脂片10(保護樹脂12)的厚度之保護被膜，而且不論晶圓W的表面形狀為何，皆能在晶圓W的整個表面區域形成均一的厚度的保護被膜。又，藉由使用配合晶圓W的形狀的樹脂片10，能夠以必要的最低限度的保護樹脂12的量形成保護被膜，而可以節省保護樹脂12。以下， 說明在本實施形態的保護被膜的被覆方法中所使用之樹脂片。 Therefore, the applicant of the present invention has thought of attaching a resin sheet 10 (see FIG. 2) having a shape matching the wafer W to the surface of the wafer W, and transferring the protective resin 12 (see FIG. 2) constituting the protective film to the wafer W surface method. Thereby, a protective film corresponding to the thickness of the resin sheet 10 (protective resin 12) can be formed, and a protective film having a uniform thickness can be formed on the entire surface area of the wafer W regardless of the surface shape of the wafer W. In addition, by using the resin sheet 10 that conforms to the shape of the wafer W, a protective film can be formed with the minimum required amount of the protective resin 12 and the protective resin 12 can be saved. the following, The resin sheet used in the coating method of the protective film of this embodiment is demonstrated.
如圖2所示，樹脂片10是將凝膠狀的保護樹脂12塗佈在形成為與晶圓W大致相同直徑的圓形的剝離片11的表面上而構成，並形成為薄膜狀。此樹脂片10在被貼附(密接)於晶圓W的表面上之後，是藉由乾燥而在晶圓W的整個表面區域上形成保護被膜。剝離片11是以聚對苯二甲酸乙二酯(PET)等合成樹脂的薄膜所構成。保護樹脂12所使用的是聚乙烯醇(PVA)、聚乙二醇(PEG)等具有水溶性與熱可塑性的樹脂。再者，較理想的是，凝膠狀的保護樹脂12具有在密接於晶圓W的表面上之後，不會從晶圓W的表面流出至晶圓W的外側之程度的黏度。 As shown in FIG. 2, the resin sheet 10 is formed by applying a gel-like protective resin 12 on the surface of a circular release sheet 11 having a diameter substantially the same as that of the wafer W, and is formed into a thin film. After the resin sheet 10 is attached (adhered) to the surface of the wafer W, a protective film is formed on the entire surface area of the wafer W by drying. The release sheet 11 is formed of a film of a synthetic resin such as polyethylene terephthalate (PET). The protective resin 12 is made of a resin having water solubility and thermoplasticity such as polyvinyl alcohol (PVA) and polyethylene glycol (PEG). Furthermore, it is desirable that the gel-like protective resin 12 has a viscosity such that it does not flow out from the surface of the wafer W to the outside of the wafer W after being in close contact with the surface of the wafer W.
又，宜在保護樹脂12中添加會吸收雷射波長之光的吸收劑。藉此，進行雷射加工時，由於可隨著晶圓W的加工將保護被膜也同時去除，因此能夠防止因晶圓W的熱分解物的蒸氣等而導致保護被膜從晶圓W的表面剝離之情形。又，樹脂片10並不受限於上述之構成，只要是可貼附在晶圓W的表面而形成保護被膜的物品，則無論如何被構成皆可。例如，也能以熱可塑性的樹脂薄膜或水溶性的樹脂薄膜構成保護樹脂12。此時，剝離片11也不一定非設置不可。 Further, it is preferable to add an absorbent that absorbs light of a laser wavelength to the protective resin 12. Accordingly, during laser processing, the protective film can be removed at the same time as the wafer W is processed, so that the protective film can be prevented from being peeled from the surface of the wafer W due to the vapor of the thermal decomposition product of the wafer W and the like. Situation. In addition, the resin sheet 10 is not limited to the above-mentioned structure, and may be any structure as long as it is an article that can be attached to the surface of the wafer W to form a protective film. For example, the protective resin 12 may be formed of a thermoplastic resin film or a water-soluble resin film. At this time, the release sheet 11 is not necessarily provided.
接著，說明本實施形態的保護被膜形成裝置。如圖3所示，保護被膜形成裝置1是構成為可將樹脂片10(參照圖2)貼附在晶圓W的表面，其中晶圓W是被載置於保持台2 的上表面，並藉由複數個夾持手段3而受到保持。保持台2是形成為圓盤狀，且保持台2的上表面形成有吸引保持晶圓W的保持面。保持面是由多孔性陶瓷等多孔質構件所形成，且將保持面連接到圖未示的吸引源上。被載置在保持台2上的晶圓W是藉由於保持面上產生的負壓而被吸引保持。又，在保持台2的下表面中央固定有電動馬達20的驅動軸21的上端部。藉此，將保持台2構成為可承受電動馬達20的旋轉力而旋轉。 Next, a protective film forming apparatus according to this embodiment will be described. As shown in FIG. 3, the protective film forming apparatus 1 is configured to attach a resin sheet 10 (see FIG. 2) to a surface of a wafer W, and the wafer W is placed on a holding table 2. And the upper surface is held by a plurality of clamping means 3. The holding table 2 is formed in a disc shape, and a holding surface that attracts and holds the wafer W is formed on the upper surface of the holding table 2. The holding surface is formed of a porous member such as a porous ceramic, and the holding surface is connected to a suction source (not shown). The wafer W placed on the holding table 2 is attracted and held by the negative pressure generated on the holding surface. An upper end portion of a drive shaft 21 of the electric motor 20 is fixed to the center of the lower surface of the holding table 2. Accordingly, the holding table 2 is configured to be capable of rotating while receiving the rotational force of the electric motor 20.
又，在保持台2的外周，是將複數個(例如4個)夾持手段3等間隔地排列在保持台2的環周方向上而設置。夾持手段3是構成為可夾住環狀框架F的上、下表面，而將夾持機構31安裝在從保持台2的外周面突出之支臂30上而構成。夾持機構31是藉由在保持台2的環周方向(水平方向)上具有旋轉軸(圖未示)的圓柱狀的驅動機構32、支撐環狀框架F的下表面(保持膠帶T)的固定支撐部33、及支撐環狀框架F的上表面的可動支撐部34而被構成。 In addition, a plurality of (for example, four) holding means 3 are arranged on the outer periphery of the holding table 2 at regular intervals in the circumferential direction of the holding table 2. The clamping means 3 is configured to clamp the upper and lower surfaces of the ring-shaped frame F, and the clamping mechanism 31 is mounted on the arm 30 protruding from the outer peripheral surface of the holding table 2. The clamping mechanism 31 supports a lower surface of the ring frame F (holding tape T) by a cylindrical driving mechanism 32 having a rotation axis (not shown) in a circumferential direction (horizontal direction) of the holding table 2. The fixed support part 33 and the movable support part 34 which supports the upper surface of the ring-shaped frame F are comprised.
驅動機構32是以例如空氣驅動的旋轉式驅動器(rotary actuator)所構成。固定支撐部33是由在水平方向上延伸的長條體所形成。固定支撐部33，是以使前端部分(從驅動機構32的外周面)朝保持台2的徑向內側突出的方式在驅動機構32的兩側面各安裝1個。可動支撐部34是形成為側面視之為L字形，且將一端固定在驅動機構32的旋轉軸上。可動支撐部34是形成為藉由驅動機構32的驅動，而可在夾持環狀框架F的夾持位置(固定支撐部33的前端與可動支撐部 34的前端相向的位置)與從固定支撐部33退避的退避位置之間開閉。像這樣，夾持機構31會形成為可在固定支撐部33與可動支撐部34之間夾持環狀框架F(晶圓W)。 The driving mechanism 32 is constituted by, for example, an air-driven rotary actuator. The fixed support portion 33 is formed of an elongated body extending in the horizontal direction. One fixed support portion 33 is mounted on each of both side surfaces of the drive mechanism 32 so that the front end portion (from the outer peripheral surface of the drive mechanism 32) protrudes radially inward of the holding table 2. The movable support portion 34 is formed in an L-shape when viewed from the side, and has one end fixed to a rotation shaft of the drive mechanism 32. The movable support portion 34 is formed to be driven by the drive mechanism 32 so that the movable support portion 34 can be held at a clamping position (the front end of the fixed support portion 33 and the movable support portion) to clamp the ring frame F. The position where the front end of 34 is opposed) and the retracted position retracted from the fixed support portion 33. In this manner, the clamping mechanism 31 is formed so that the ring frame F (wafer W) can be clamped between the fixed support portion 33 and the movable support portion 34.
又，保持台2的上方設有將樹脂片10載置在晶圓W的表面的載置手段4。載置手段4是包含有將樹脂片10的一端抓住而保持的樹脂片保持手段40、和使樹脂片保持手段40在水平方向上移動的移動手段41而構成。移動手段41是包含有在保持台2的上方於水平方向上延伸的導軌42、和可沿著導軌42移動的移動塊43而構成。移動塊43是藉由以圖未示的驅動機構驅動，以沿著導軌42在水平方向上移動。 A mounting means 4 for mounting the resin sheet 10 on the surface of the wafer W is provided above the holding table 2. The mounting means 4 includes a resin sheet holding means 40 that grasps and holds one end of the resin sheet 10 and a moving means 41 that moves the resin sheet holding means 40 in a horizontal direction. The moving means 41 includes a guide rail 42 extending in a horizontal direction above the holding table 2 and a moving block 43 movable along the guide rail 42. The moving block 43 is driven by a driving mechanism (not shown) to move in a horizontal direction along the guide rail 42.
樹脂片保持手段40是在從移動塊43朝下方延伸的支臂部44的前端上設置朝水平方向延伸的一對保持爪45a、45b而被構成。支臂30是構成為可在上下方向上伸縮。一對保持爪45a、45b是設置成上下相向，並將下側的保持爪45a固定在支臂部44上。上側的保持爪45b是構成為可上下移動，並藉由使上側的保持爪45b相對於下側的保持爪45a接近，以形成為可將樹脂片10的一端抓住而保持。在載置手段4中，可以藉由在已保持有樹脂片10的狀態下使樹脂片保持手段40水平移動，並且使支臂部44伸縮，來將樹脂片10載置到晶圓W的表面之預定位置上。載置手段4的動作將在後面敘述。 The resin sheet holding means 40 is configured by providing a pair of holding claws 45 a and 45 b extending in the horizontal direction on the front end of the arm portion 44 extending downward from the moving block 43. The arm 30 is configured to be expandable and contractible in the vertical direction. The pair of holding claws 45 a and 45 b are provided so as to face each other vertically, and the lower holding claw 45 a is fixed to the arm portion 44. The upper holding claw 45b is configured to be movable up and down, and the upper holding claw 45b is brought closer to the lower holding claw 45a so as to be held by one end of the resin sheet 10. In the mounting means 4, the resin sheet 10 can be placed on the surface of the wafer W by moving the resin sheet holding means 40 horizontally and expanding and contracting the arm portion 44 while the resin sheet 10 is already held. In the predetermined position. The operation of the placing means 4 will be described later.
又，詳細內容會在後面說明，不過，保護被膜形成裝置1會具有朝向將樹脂片10載置後的晶圓W噴射空氣 的空氣噴射噴嘴5(參照圖5)。藉由將空氣朝向晶圓W(樹脂片10)噴射，可將樹脂片10的保護樹脂12(參照圖2)密接在晶圓W的表面上。 The details will be described later, but the protective film forming apparatus 1 has a structure in which air is sprayed toward the wafer W after the resin sheet 10 is placed. Air injection nozzle 5 (see FIG. 5). By spraying air toward the wafer W (resin sheet 10), the protective resin 12 (see FIG. 2) of the resin sheet 10 can be closely adhered to the surface of the wafer W.
在像這樣所構成的保護被膜形成裝置1中，是藉由載置手段4將樹脂片10載置到已被保持於保持台2上的晶圓W的表面上。將樹脂片10載置後，會朝向樹脂片10噴射空氣。藉此，將樹脂片10的保護樹脂12密接在晶圓W的表面上，而將樹脂片10貼附在晶圓W上。貼附樹脂片10後，可藉由將剝離片11剝下，以將構成保護被膜的保護樹脂12轉移至晶圓W的表面。並且，可藉由使保持台2旋轉，以使保護樹脂被乾燥而進行硬化。藉由以上，即可在晶圓W的表面形成對應樹脂片10(保護樹脂12)的厚度的保護被膜。像這樣，藉由將保護被膜被覆在晶圓W的表面，即可防止因雷射加工而產生的碎片附著在晶圓W的表面。 In the protective film forming apparatus 1 configured as described above, the resin sheet 10 is placed on the surface of the wafer W held on the holding table 2 by the placing means 4. After the resin sheet 10 is placed, air is sprayed toward the resin sheet 10. Thereby, the protective resin 12 of the resin sheet 10 is closely adhered to the surface of the wafer W, and the resin sheet 10 is attached to the wafer W. After the resin sheet 10 is attached, the protective sheet 12 constituting the protective film can be transferred to the surface of the wafer W by peeling off the release sheet 11. Further, the protective resin can be dried and hardened by rotating the holding table 2. With the above, a protective film corresponding to the thickness of the resin sheet 10 (protective resin 12) can be formed on the surface of the wafer W. As described above, by covering the surface of the wafer W with the protective film, it is possible to prevent the debris generated by the laser processing from adhering to the surface of the wafer W.
其次，參照圖4至圖6，說明關於本實施形態的保護被膜的被覆方法。圖4是表示本實施形態的樹脂片載置步驟之一例的圖。在圖4中，為了方便說明，是將紙面右側當作樹脂片(包含晶圓、保持膠帶)的一端側，並將紙面左側當作樹脂片的另一端側。圖5是表示本實施形態的貼附步驟之一例的圖。圖6是表示本實施形態的硬化步驟之一例的圖。本實施形態的保護被膜的被覆方法是由下列步驟所構成：將樹脂片載置在晶圓的表面以將晶圓的整個表面區域覆蓋的樹脂片載置步驟、將樹脂片貼附到晶圓的表面的貼附步驟、以及使樹脂片(保護樹脂)硬化的硬化步驟。以下，說明 本實施形態的保護被膜的被覆方法之各步驟。 Next, a method for coating the protective film according to this embodiment will be described with reference to FIGS. 4 to 6. FIG. 4 is a diagram showing an example of a resin sheet placing step in the present embodiment. In FIG. 4, for convenience of explanation, the right side of the paper surface is regarded as one end side of the resin sheet (including the wafer and the holding tape), and the left side of the paper surface is regarded as the other end side of the resin sheet. FIG. 5 is a diagram showing an example of a sticking procedure in the present embodiment. FIG. 6 is a diagram showing an example of a curing step in the present embodiment. The covering method of the protective film of this embodiment is composed of the following steps: a resin sheet mounting step of placing a resin sheet on the surface of the wafer to cover the entire surface area of the wafer, and attaching the resin sheet to the wafer And a hardening step of hardening a resin sheet (protective resin). The following explains Each step of the coating method of the protective film of this embodiment.
如圖4所示，首先實施樹脂片載置步驟。將晶圓W以凸部B朝上而透過保持膠帶T被支撐在環狀框架F的狀態，吸引保持在保持台2的保持面上。此時，是將環狀框架F及保持膠帶T的一部分夾持在固定支撐部33與可動支撐部34之間。在載置手段4中，是藉由樹脂片保持手段40來將樹脂片10的一端側保持。又，會調整樹脂片保持手段40的水平方向的位置及一對保持爪45的高度位置(支臂部44的長度)，以使樹脂片10的另一端側位在晶圓W(保持台2)的另一端側。 As shown in FIG. 4, first, a resin sheet mounting step is performed. The wafer W is supported by the ring frame F through the holding tape T with the convex portion B facing upward, and is sucked and held on the holding surface of the holding table 2. At this time, a part of the ring frame F and the holding tape T are sandwiched between the fixed support portion 33 and the movable support portion 34. In the mounting means 4, one end side of the resin sheet 10 is held by the resin sheet holding means 40. In addition, the horizontal position of the resin sheet holding means 40 and the height position of the pair of holding claws 45 (the length of the arm portion 44) are adjusted so that the other end side of the resin sheet 10 is positioned on the wafer W (the holding table 2) ) On the other side.
載置手段4在使樹脂片10的另一端接觸到晶圓W的另一端後，會以保持著樹脂片10的一端的狀態一邊將一對保持爪45的高度位置降低(一邊將支臂部44伸長)，一邊使移動塊43沿著導軌42從另一端側朝向一端側移動。藉此，可將樹脂片10在已將樹脂片10的中心及晶圓W的中心對齊，且將保護樹脂12朝向下方的狀態下，載置在晶圓W的表面。在圖4所示的狀態中，是使保護樹脂12的表面接觸凸部B的頂點，而在保護樹脂12與晶圓W之間形成與凸部B的高度相當的間隙。 After the mounting means 4 makes the other end of the resin sheet 10 contact the other end of the wafer W, it lowers the height position of the pair of holding claws 45 while holding one end of the resin sheet 10 (while lowering the arm portion 44 is extended), while moving the moving block 43 along the guide rail 42 from the other end side toward the one end side. Thereby, the resin sheet 10 can be placed on the surface of the wafer W with the center of the resin sheet 10 and the center of the wafer W aligned and the protective resin 12 facing downward. In the state shown in FIG. 4, the surface of the protective resin 12 is brought into contact with the apex of the convex portion B, and a gap corresponding to the height of the convex portion B is formed between the protective resin 12 and the wafer W.
其次，實施貼附步驟。首先說明貼附步驟中的必要構成。如圖5所示，在晶圓W的上方設置有朝向樹脂片10噴射空氣的空氣噴射噴嘴5。空氣噴射噴嘴5是被連接至空氣供給源50。空氣噴射噴嘴5是在保持台2的外周側上方，藉由在垂直方向上延伸的垂直部5a與從垂直部5a的下端朝 水平方向延伸的水平部5b而形成為大致呈L字形。水平部5b的前端會朝向下方彎曲，而可從彎曲的前端部分朝向樹脂片10噴射空氣。又，垂直部5a的上端設置有旋轉馬達51。藉由旋轉馬達51的驅動，可將空氣噴射噴嘴5在晶圓W的上方以垂直部5a為軸旋繞。 Next, the attaching step is performed. First, the necessary configuration in the attaching step will be described. As shown in FIG. 5, an air ejection nozzle 5 that ejects air toward the resin sheet 10 is provided above the wafer W. The air injection nozzle 5 is connected to an air supply source 50. The air jet nozzle 5 is located above the outer peripheral side of the holding table 2 with a vertical portion 5a extending in the vertical direction and facing from the lower end of the vertical portion 5a. The horizontal portion 5b extending in the horizontal direction is formed in a substantially L-shape. The front end of the horizontal portion 5b is bent downward, and air can be ejected toward the resin sheet 10 from the curved front end portion. A rotary motor 51 is provided at the upper end of the vertical portion 5a. By driving the rotary motor 51, the air jet nozzle 5 can be rotated around the vertical portion 5a above the wafer W as an axis.
在貼附步驟中，是一邊使空氣噴射噴嘴5旋繞一邊涵蓋晶圓W的整個區域來噴射空氣。藉此，將樹脂片10藉由空氣的噴射力而朝向晶圓W按壓。其結果，可將凝膠狀的保護樹脂12對凸部B順應著形狀稍微變形，而毫無間隙地密接(貼附)在晶圓W的表面上。並且，藉由將剝離片11剝下，以將保護樹脂12轉移到晶圓W的表面。再者，不將剝離片11剝下亦可。 In the attaching step, the air is sprayed while covering the entire area of the wafer W while the air jet nozzle 5 is wound. Thereby, the resin sheet 10 is pressed toward the wafer W by the spraying force of air. As a result, the gel-shaped protective resin 12 can be slightly deformed in accordance with the shape of the convex portion B, and can be closely adhered (attached) to the surface of the wafer W without any gap. Then, the peeling sheet 11 is peeled off to transfer the protective resin 12 to the surface of the wafer W. It should be noted that the peeling sheet 11 may not be peeled off.
接著，實施硬化步驟。如圖6所示，在硬化步驟中，是藉由將保持台2旋轉，而使保護樹脂12被硬化。藉此，可將對應保護樹脂12的厚度之保護被膜形成在晶圓W的表面。又，也可藉由設置在晶圓W的上方的風扇6，將風朝向保護樹脂12吹送，以使保護樹脂12乾燥。 Next, a hardening step is performed. As shown in FIG. 6, in the hardening step, the protective resin 12 is hardened by rotating the holding table 2. Thereby, a protective film corresponding to the thickness of the protective resin 12 can be formed on the surface of the wafer W. In addition, the fan 6 provided above the wafer W may blow the wind toward the protective resin 12 to dry the protective resin 12.
如以上所述，依據本實施形態的保護被膜的被覆方法，將樹脂片10載置在晶圓W的表面後，藉由將樹脂片10密接在晶圓W的整個表面區域，可以在晶圓W的表面上形成對應於樹脂片10(保護樹脂12)的厚度的保護被膜。據此，不論晶圓W的表面形狀為何，例如即使是表面形成有凸塊等凸部的晶圓W，也可在晶圓W的整個表面區域形成均一的厚度的保護被膜。又，藉由使用配合晶圓W的形狀之樹 脂片10，就可以用必要的最低限度的保護樹脂12之量形成保護被膜，而能節省保護樹脂12。 As described above, according to the coating method of the protective film of this embodiment, after the resin sheet 10 is placed on the surface of the wafer W, the resin sheet 10 can be adhered to the entire surface area of the wafer W, and the A protective film corresponding to the thickness of the resin sheet 10 (protective resin 12) is formed on the surface of W. Accordingly, regardless of the surface shape of the wafer W, for example, even if the wafer W is formed with convex portions such as bumps on the surface, a protective film having a uniform thickness can be formed over the entire surface area of the wafer W. In addition, by using a tree of a shape matching the wafer W The fat sheet 10 can form a protective film with the necessary minimum amount of the protective resin 12, and can save the protective resin 12.
其次，參照圖7說明第1變形例的貼附步驟。圖7是表示第1變形例的貼附步驟的圖。在第1變形例中，是在利用樹脂片(保護樹脂)的熱可塑性而使其密接在晶圓上之點上，與本實施形態相異。再者，在以下的說明中，是以相同的符號表示相同名稱的構成。 Next, the attaching procedure of the first modification will be described with reference to FIG. 7. FIG. 7 is a diagram showing a sticking procedure according to a first modification. The first modification is different from the present embodiment in that the resin sheet (protective resin) is used to make it adhere to the wafer by using the thermoplasticity. In the following description, configurations having the same names are denoted by the same symbols.
如圖7所示，在保持台2的上方，以將晶圓W的整個表面區域覆蓋的方式設置有加熱器7。又，第1變形例中的樹脂片10不具備剝離片，僅以薄膜狀的保護樹脂12構成。在第1變形例的貼附步驟中，是藉由使加熱器7發熱，來將樹脂片10(保護樹脂12)加熱。由於保護樹脂12具有熱可塑性，因此會因被加熱而熔融。藉此，可將保護樹脂12對凸部B順應著形狀稍微變形，而毫無間隙地密接(貼附)在晶圓W的表面上。並且，與本實施形態一樣，可藉由實施硬化步驟而形成保護被膜。像這樣，在第1變形例中，也可以在晶圓W的表面上形成對應樹脂片10(保護樹脂12)的厚度之保護被膜。 As shown in FIG. 7, a heater 7 is provided above the holding table 2 so as to cover the entire surface area of the wafer W. In addition, the resin sheet 10 in the first modification does not include a release sheet, and is composed of only a thin-film protective resin 12. In the attaching step of the first modification, the resin sheet 10 (protective resin 12) is heated by causing the heater 7 to generate heat. Since the protective resin 12 is thermoplastic, it is melted by being heated. With this, the convex portion B of the protective resin 12 can be slightly deformed according to the shape, and can be closely adhered (attached) to the surface of the wafer W without any gap. In addition, as in this embodiment, a protective film can be formed by performing a curing step. As described above, in the first modification, a protective film corresponding to the thickness of the resin sheet 10 (protective resin 12) may be formed on the surface of the wafer W.
又，如以下的變形例也是可行的。參照圖8，說明第2變形例的貼附步驟。圖8是表示第2變形例的貼附步驟的圖。在第2變形例中，是在利用樹脂片(保護樹脂)的水溶性而使其密接在晶圓上之點上，與本實施形態相異。 Also, the following modifications are possible. Referring to FIG. 8, a description will be given of a second modification example. FIG. 8 is a diagram illustrating a step of attaching a second modification. The second modification is different from the present embodiment in that the resin sheet (protective resin) is made to adhere to the wafer by being water-soluble.
如圖8所示，保持台2的上方設置有朝向晶圓W的表面(樹脂片10)噴射水的水噴射噴嘴8。又，第2變形例的樹 脂片10也與第1變形例一樣，不具備剝離片而僅由薄膜狀的保護樹脂12構成。在第2變形例的貼附步驟中，是從水噴射噴嘴8對涵蓋樹脂片10的整個區域噴射水。由於保護樹脂12為水溶性樹脂，因此會藉由吸收所噴射的水而具有流動性。藉此，保護樹脂12會對凸部B順應著形狀流動，而毫無間隙地密接(貼附)於晶圓W的表面。並且，與本實施形態一樣，可藉由實施硬化步驟而形成保護被膜。像這樣，在第2變形例中，也可以在晶圓W的表面上形成對應樹脂片10(保護樹脂12)的厚度之保護被膜。 As shown in FIG. 8, a water spray nozzle 8 that sprays water toward the surface (resin sheet 10) of the wafer W is provided above the holding table 2. The tree of the second modification Similarly to the first modification, the fat sheet 10 is not provided with a release sheet and is composed of only a thin-film protective resin 12. In the attaching step of the second modification, water is sprayed from the water spray nozzle 8 over the entire area covering the resin sheet 10. Since the protective resin 12 is a water-soluble resin, it has fluidity by absorbing the sprayed water. Thereby, the protective resin 12 flows in accordance with the shape of the convex portion B, and is closely adhered (attached) to the surface of the wafer W without any gap. In addition, as in this embodiment, a protective film can be formed by performing a curing step. In this manner, in the second modification, a protective film corresponding to the thickness of the resin sheet 10 (protective resin 12) may be formed on the surface of the wafer W.
再者，本發明並不受限於上述實施形態，且能夠進行各種變更而實施。在上述實施形態中，關於在附加圖式上所圖示之大小與形狀等，並不受限於此，且在能夠發揮本發明之效果的範圍內適當地進行變更是可行的。另外，只要在不脫離本發明的目的之範圍內，均可做適當變更而實施。 The present invention is not limited to the above-mentioned embodiments, and can be implemented with various modifications. In the above-mentioned embodiment, the size, shape, and the like shown in the attached drawings are not limited to this, and it is possible to appropriately change within a range where the effects of the present invention can be exhibited. In addition, as long as it does not deviate from the objective of this invention, it can implement suitably by changing it suitably.
例如，在上述實施形態中，載置手段4雖然是做成藉由用抓住樹脂片10的一端來使其在水平方向上滑動的作法，而將樹脂片10載置在晶圓W的表面上之構成，但並不受限於此構成。載置手段4，只要能將樹脂片10載置在晶圓W的表面上，則不論是以何種方式被構成均可。例如，也可以在已將樹脂片10的剝離片側朝上的狀態下以吸附台將剝離片吸引保持，且在將吸附台定位在晶圓W的上方後，讓吸附台降下以使保護樹脂12與晶圓W的表面接觸。此時，可以藉由將樹脂片10的吸引保持解除，而將樹脂片10載置 在晶圓W的表面。 For example, in the above-mentioned embodiment, although the mounting means 4 is configured to slide the resin sheet 10 in the horizontal direction by grasping one end of the resin sheet 10, the resin sheet 10 is placed on the surface of the wafer W The above structure is not limited to this structure. The mounting means 4 may be configured in any manner as long as the resin sheet 10 can be mounted on the surface of the wafer W. For example, the release sheet may be sucked and held by an adsorption table with the release sheet side of the resin sheet 10 facing upward, and after the adsorption table is positioned above the wafer W, the adsorption table may be lowered to protect the resin 12 It is in contact with the surface of the wafer W. At this time, the resin sheet 10 can be placed by releasing the suction and holding of the resin sheet 10. On the surface of wafer W.
又，在上述實施形態中，雖然是做成分別實施樹脂片載置步驟與貼附步驟之構成，但並不受限於此構成。例如，也可以將樹脂片10構成為捲筒狀，以進給滾筒將樹脂片10進給至晶圓W的表面，並且以設置於晶圓W上方的按壓滾筒將樹脂片10朝向晶圓W的表面按壓。此時，可以同時地實施樹脂片載置步驟與貼附步驟，而可將保護被膜的被覆方法簡略化。 Moreover, in the said embodiment, although it was set as the structure which carried out the resin sheet mounting process and the attaching process separately, it is not limited to this structure. For example, the resin sheet 10 may be configured as a roll, the resin sheet 10 may be fed to the surface of the wafer W by a feed roller, and the resin sheet 10 may be directed toward the wafer W by a pressing roller provided above the wafer W. Press on the surface. At this time, the resin sheet placing step and the attaching step can be performed at the same time, and the covering method of the protective film can be simplified.
又，在上述之實施形態中，保護被膜的被覆方法雖然是做成藉由保護被膜形成裝置1來實施之構成，但並不受限於此構成。保護被膜的被覆方法也可由作業人員來實施。 Moreover, in the said embodiment, although the coating method of the protective film was implemented by the protective film formation apparatus 1, it is not limited to this structure. The coating method for protecting the film may be implemented by an operator.
如以上的說明，本發明具有不論晶圓的表面形狀為何，皆可在晶圓的表面均一地形成保護被膜之效果，尤其對將表面上形成有凸塊等凸部的晶圓被覆的保護被膜的被覆方法是有用的。 As described above, the present invention has the effect of uniformly forming a protective film on the surface of a wafer regardless of the surface shape of the wafer, and particularly, it is a protective film for coating a wafer having convex portions such as bumps on the surface. The covering method is useful.
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| JP4666583B2 (en) | 2005-01-18 | 2011-04-06 | 株式会社ディスコ | Protective coating method |
| JP2008006379A (en) | 2006-06-29 | 2008-01-17 | Disco Abrasive Syst Ltd | Protection film formation method |
| JP2009155625A (en) * | 2007-12-07 | 2009-07-16 | Denki Kagaku Kogyo Kk | Protective film, laminated film and laser processing method using the same |
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