TWI655748B - 具有熱敏單元的垂直雙擴散金氧半功率元件 - Google Patents
具有熱敏單元的垂直雙擴散金氧半功率元件 Download PDFInfo
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- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 105
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 105
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 54
- 229920005591 polysilicon Polymers 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 108
- 238000010586 diagram Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
具有熱敏單元的垂直雙擴散金氧半功率元件包含一垂直雙擴散金氧半功率電晶體和至少一熱敏單元。該垂直雙擴散金氧半功率電晶體包含一第一金屬層、一基底層、一磊晶層、一第二金屬層和複數條第一多晶矽層,其中該複數條第一多晶矽層的每一第一多晶矽層對應一第一氧化層、具有一第二導電類型的第一摻雜井和第二摻雜井、具有一第一導電類型的第一摻雜區和第二摻雜區和一第二氧化層。該至少一熱敏單元是用以偵測該垂直雙擴散金氧半功率電晶體在操作時的溫度,且該垂直雙擴散金氧半功率電晶體和該至少一熱敏單元是共用一相同製程。
Description
本發明是有關於一種垂直雙擴散金氧半功率元件,尤指一種具有熱敏單元的垂直雙擴散金氧半功率元件。
當一積體電路操作時,現有技術是利用和該積體電路共同封裝的一溫度感測元件量測該積體電路的溫度。然後該溫度感測元件將該溫度傳送至該積體電路,以及該積體電路根據該溫度和一參考溫度,判斷是否啟動該積體電路內的一過溫度保護。雖然該溫度感測元件和該積體電路共同封裝在一起,但因為該溫度感測元件並未整合至該積體電路內,所以當該積體電路根據該溫度和該參考溫度,啟動該積體電路內的過溫度保護時,該積體電路內的實際溫度可能遠大於該參考溫度,也就是說在現有技術中,該積體電路有可能在尚未啟動該積體電路內的過溫度保護時就被燒毀。因此,對於該積體電路而言,現有技術並非一個較佳的技術解決方案。
本發明的一實施例提供一種具有熱敏單元的垂直雙擴散金氧半(vertical double diffused metal-oxide-semiconductor,VDMOS)功率元件。該垂直雙
擴散金氧半功率元件包含一垂直雙擴散金氧半功率電晶體和至少一熱敏單元。該垂直雙擴散金氧半功率電晶體包含一第一金屬層、一具有一第一導電類型的基底層、一具有該第一導電類型的磊晶層、一第二金屬層和複數條第一多晶矽層。該基底層形成於該第一金屬層之上。該磊晶層形成於該基底層之上。該複數條第一多晶矽層的每一第一多晶矽層對應一第一氧化層、具有一第二導電類型的第一摻雜井和第二摻雜井、具有該第一導電類型的第一摻雜區和第二摻雜區和一第二氧化層,其中該第一氧化層形成於該磊晶層之上,該第一摻雜井和該第二摻雜井形成於該磊晶層之中,該第一摻雜區和該第二摻雜區分別形成於該第一摻雜井和該第二摻雜井之中,該每一第一多晶矽層形成於該第一氧化層之上,該第二氧化層包覆該每一第一多晶矽層,以及該第二金屬層形成於該第一摻雜井、該第二摻雜井、該第一摻雜區、該第二摻雜區和該第二氧化層之上。該至少一熱敏單元形成於該磊晶層之上,是用以偵測該垂直雙擴散金氧半功率電晶體在操作時的溫度,且該垂直雙擴散金氧半功率電晶體和該至少一熱敏單元是共用一相同製程。
本發明提供一種垂直雙擴散金氧半功率元件。該垂直雙擴散金氧半功率元件是利用一相同製程整合一垂直雙擴散金氧半功率電晶體和至少一熱敏單元。因為該至少一熱敏單元是形成在該垂直雙擴散金氧半功率電晶體的旁邊,所以該至少一熱敏單元的等效順向偏壓將快速地隨該垂直雙擴散金氧半功率電晶體的操作溫度反向變化。也就是說該垂直雙擴散金氧半功率元件的控制器即可根據該至少一熱敏單元的等效順向偏壓的變化和一過溫度保護參考溫度,快速地判斷是否啟動該垂直雙擴散金氧半功率元件內的過溫度保護。因此,相較於現有技術,因為該垂直雙擴散金氧半功率元件的控制器可快速地判斷是否啟動該垂直雙擴散金氧半功率元件內的過溫度保護,所以本發明並不會有現
有技術太慢啟動過溫度保護的缺點。
100、500、600、700‧‧‧垂直雙擴散金氧半功率元件
102‧‧‧垂直雙擴散金氧半功率電晶體
104、106、502‧‧‧熱敏單元
108‧‧‧連接部
110‧‧‧第一電極
112‧‧‧第二電極
1022‧‧‧第一金屬層
1024‧‧‧基底層
1026‧‧‧磊晶層
1028‧‧‧第二金屬層
1030‧‧‧第一多晶矽層
1032‧‧‧第一氧化層
1034‧‧‧第一摻雜井
1036‧‧‧第二摻雜井
1038‧‧‧第一摻雜區
1040‧‧‧第二摻雜區
1041‧‧‧第二多晶矽層
1042‧‧‧第二氧化層
1043、1064‧‧‧摻雜區
1044‧‧‧電流
1045‧‧‧第三氧化層
1046、1048‧‧‧通道
1047、704‧‧‧深摻雜井
1050‧‧‧第一接觸
1052‧‧‧第四氧化層
1054‧‧‧摻雜井
1062‧‧‧多晶矽層
1066‧‧‧第二接觸
200‧‧‧耐壓區
202‧‧‧密封環
204、206‧‧‧襯墊
402‧‧‧熱源
702‧‧‧場氧化層
AA’‧‧‧直線
第1圖是本發明的第一實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半功率元件的橫截面的示意圖。
第2圖是說明對應第1圖的上視示意圖。
第3圖是說明垂直雙擴散金氧半功率元件的上視示意圖。
第4圖是說明該熱敏元件偵測垂直雙擴散金氧半功率電晶體在操作時的溫度的示意圖。
第5圖是本發明的第二實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半功率元件的上視示意圖。
第6圖是本發明的第三實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半功率元件的上視示意圖。
第7圖是本發明的第四實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半功率元件的橫截面的示意圖。
請參照第1圖,第1圖是本發明的第一實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半(vertical double diffused metal-oxide-semiconductor,VDMOS)功率元件100的橫截面的示意圖。如第1圖所示,垂直雙擴散金氧半功率元件100包含一垂直雙擴散金氧半功率電晶體102和二熱敏單元104、106。但本發明並不受限於垂直雙擴散金氧半功率元件100包含一個垂直雙擴散金氧半功率電晶體和二個熱敏單元,也就是說垂直雙擴散金氧半功率元件100可包含一
個以上的垂直雙擴散金氧半功率電晶體和一個以上的熱敏單元。如第1圖所示,垂直雙擴散金氧半功率電晶體102包含一第一金屬層1022、一具有一第一導電類型的基底層1024、一具有該第一導電類型的磊晶層1026、一第二金屬層1028和複數條第一多晶矽層中的一第一多晶矽層1030。如第1圖所示,基底層1024形成於第一金屬層1022之上。磊晶層1026形成於基底層1024之上。第一多晶矽層1030對應一第一氧化層1032、具有一第二導電類型的第一摻雜井1034和第二摻雜井1036、具有該第一導電類型的第一摻雜區1038和第二摻雜區1040和一第二氧化層1042,其中第一氧化層1032形成於磊晶層1026之上,第一摻雜井1034和第二摻雜井1036形成於磊晶層1026之中,第一摻雜區1038和第二摻雜區1040分別形成於第一摻雜井1034和第二摻雜井1036之中,第一多晶矽層1030形成於第一氧化層1032之上,第二氧化層1042包覆第一多晶矽層1030,以及第二金屬層1028形成於第一摻雜井1034、第二摻雜井1036、第一摻雜區1038、第二摻雜區1040和第二氧化層1042之上。另外,該第一導電類型是N型和該第二導電類型是P型,以及基底層1024的離子濃度大於磊晶層1026的離子濃度。另外,第一摻雜井1034和第二摻雜井1036是根據第一多晶矽層1030以一自我對齊(self-align)和一離子佈植的方式形成。也就是說當第一多晶矽層1030形成之後,第一摻雜井1034和第二摻雜井1036不需要一額外的光罩即可通過第一多晶矽層1030阻擋(也就是自我對齊)和該離子佈植的方式而形成。
如第1圖所示,第一金屬層1022是垂直雙擴散金氧半功率電晶體102的汲極,該複數條第一多晶矽層是垂直雙擴散金氧半功率電晶體102的閘極,以及第二金屬層1028是垂直雙擴散金氧半功率電晶體102的源極。因此,當垂直雙擴散金氧半功率電晶體102開啟時,電流1044將從第一金屬層1022(垂直雙擴散金氧半功率電晶體102的汲極)由下往上通過基底層1024、磊晶層1026、通道1046、
1048、第一摻雜區1038和第二摻雜區1040流到第二金屬層1028(垂直雙擴散金氧半功率電晶體102的源極)。另外,垂直雙擴散金氧半功率電晶體102是利用第一摻雜井1034和磊晶層1026之間的PN接面所形成的空乏區,以及第二摻雜井1036和磊晶層1026之間的PN接面所形成的空乏區(未繪示於第1圖)來承受垂直雙擴散金氧半功率電晶體102的汲極和源極之間的電壓。在本發明的一實施例中,第一多晶矽層1030的寬度必須可使第一摻雜井1034和磊晶層1026之間的PN接面所形成的空乏區和第二摻雜井1036和磊晶層1026之間的PN接面所形成的空乏區融合在一起,也就是說第一多晶矽層1030的寬度不能大於一臨界寬度,其中如果第一多晶矽層1030的寬度大於該臨界寬度,則第一多晶矽層1030的寬度將無法使第一摻雜井1034和磊晶層1026之間的PN接面所形成的空乏區和第二摻雜井1036和磊晶層1026之間的PN接面所形成的空乏區融合在一起。
如第1圖所示,熱敏單元104包含一第二多晶矽層1041和一摻雜區1043,其中摻雜區1043形成於第二多晶矽層1041之中,第二多晶矽層1041形成於一第三氧化層1045之上,第三氧化層1045形成於一具有該第二導電類型的深摻雜井1047之上,以及深摻雜井1047形成於磊晶層1026之中。如第1圖所示,熱敏單元104是一二極體(也就是一PN接面),其中熱敏單元104的順向偏壓是隨溫度反向變化(也就是熱敏單元104的順向偏壓是隨溫度增加而降低)。另外,如第1圖所示,熱敏單元106的結構和熱敏單元104的結構相同,在此不再贅述。如第1圖所示,熱敏單元104是通過摻雜區1043和一連接部108電連接熱敏單元106的多晶矽層1062,也就是說熱敏單元104串聯熱敏單元106形成一熱敏元件,其中第二多晶矽層1041通過一第一接觸1050電連接一第一電極(陽極)110以及熱敏單元106的摻雜區1064通過一第二接觸1066電連接一第二電極(陰極)112,該熱敏元件的等效順向偏壓是熱敏單元104的順向偏壓與熱敏單元106的順向偏壓的總和,
以及第一接觸1050和第二接觸1066是形成於一第四氧化層1052中。另外,基底層1024、磊晶層1026、第一摻雜井1034、第二摻雜井1036、第一摻雜區1038、第二摻雜區1040、深摻雜井1047和摻雜區1043、1064是通過該離子佈植的方式形成。另外,深摻雜井1047的功能是用以使第二摻雜井1036和磊晶層1026之間的PN接面所形成的空乏區和一摻雜井1054和磊晶層1026之間的PN接面所形成的空乏區融合在一起。另外,如第1圖所示,該熱敏元件和垂直雙擴散金氧半功率電晶體102並沒有電連接。另外,垂直雙擴散金氧半功率元件100另包含一保護層(未繪示於第1圖)形成於第二金屬層1028、第一電極110、第二電極112和連接部108之上。
另外,第2圖是說明對應第1圖的上視示意圖,以及第3圖是說明垂直雙擴散金氧半功率元件100的上視示意圖,其中第1圖是對應第3圖的直線AA’。如第3圖所示,垂直雙擴散金氧半功率元件100另包含一耐壓區200,用以圍住第1圖所示的垂直雙擴散金氧半功率電晶體102和該熱敏元件。另外,如第3圖所示,一密封環202圍繞耐壓區200,其中密封環202具有電磁干擾(electromagnetic interference,EMI)的屏蔽效果以及具有隔離外界雜訊的功能。另外,第3圖還顯示出對應垂直雙擴散金氧半功率電晶體102的源極的襯墊204以及對應垂直雙擴散金氧半功率電晶體102的閘極的襯墊206。
請參照第4圖,第4圖是說明該熱敏元件偵測垂直雙擴散金氧半功率電晶體102在操作時的溫度的示意圖。如第4圖所示,當垂直雙擴散金氧半功率電晶體102在操作時,電流1044所流經的路徑上會產生一熱源402。因為該熱敏元件是形成在垂直雙擴散金氧半功率電晶體102的旁邊,且用以構成磊晶層1026、第二摻雜井1036和深摻雜井1047的材料矽導熱快,所以該熱敏元件的等
效順向偏壓將快速地隨垂直雙擴散金氧半功率電晶體102的操作溫度反向變化。因此,垂直雙擴散金氧半功率元件100的控制器(未繪示於第4圖)即可根據該熱敏元件的等效順向偏壓的變化和一過溫度保護參考溫度,快速地判斷是否啟動垂直雙擴散金氧半功率元件100內的一過溫度保護,其中該控制器根據該熱敏元件的等效順向偏壓的變化,判斷垂直雙擴散金氧半功率元件100內的溫度是本發明領域具有通知技藝者所熟知的技巧,在此不再贅述。
另外,如第1圖所示,雖然垂直雙擴散金氧半功率元件100整合垂直雙擴散金氧半功率電晶體102和熱敏單元104、106,但垂直雙擴散金氧半功率電晶體102和熱敏單元104、106是共用一相同製程。例如該共同製程包括一對應主動區(active region)的光罩、一對應深摻雜井的光罩、一對應多晶矽層的光罩、一對應摻雜區的光罩、一對應接觸(contact)的光罩、一對應第二金屬層的光罩和和一對應保護層的光罩。該對應主動區的光罩是用以定義第一摻雜區1038和第二摻雜區1040;該對應深摻雜井的光罩是用以定義深摻雜井1047和耐壓區200;該對應多晶矽層的光罩是用以定義第一多晶矽層1030、第二多晶矽層1041和多晶矽層1062;該對應摻雜區的光罩是用以定義摻雜區1043、1064;該對應接觸的光罩是用以定義第一接觸1050和第二接觸1066;該對應第二金屬層的光罩是用以定義第二金屬層1028、第一電極110、第二電極112和連接部108;該對應保護層的光罩是用以定義該保護層。
請參照第5、6圖,第5圖是本發明的第二實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半功率元件500的上視示意圖,以及第6圖是本發明的第三實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半功率元件600的上視示意圖。如第5圖所示,垂直雙擴散金氧半功率元件500和垂直雙擴散金氧半
功率元件100的差別在於垂直雙擴散金氧半功率元件500的熱敏元件是由三個熱敏單元502串聯而成,所以垂直雙擴散金氧半功率元件500的熱敏元件等效順向偏壓是三個熱敏單元502的順向偏壓的總和。另外,如第6圖所示,垂直雙擴散金氧半功率元件600和垂直雙擴散金氧半功率元件100的差別在於垂直雙擴散金氧半功率元件600的熱敏元件是由三個垂直雙擴散金氧半功率元件100的熱敏元件並聯而成,所以垂直雙擴散金氧半功率元件600的熱敏元件等效順向偏壓是垂直雙擴散金氧半功率元件100的熱敏元件的等效順向偏壓的三分之一。
另外,本發明並不受限於垂直雙擴散金氧半功率元件100、500、600的熱敏元件,也就是說只要在垂直雙擴散金氧半功率元件100、500、600內利用該相同製程整合垂直雙擴散金氧半功率電晶體102和至少一熱敏單元都落入本發明之範疇。
請參照第7圖,第7圖是本發明的第四實施例所公開的一種具有熱敏單元的垂直雙擴散金氧半功率元件700的橫截面的示意圖。如第7圖所示,垂直雙擴散金氧半功率元件700和垂直雙擴散金氧半功率元件100的差別在於第二多晶矽層1041和多晶矽層1062是直接形成在一場氧化層702之上,場氧化層702形成於一深摻雜井704之上,以及深摻雜井704形成於磊晶層1026之中,其中場氧化層702是通過一區域矽氧化法(Local Oxidation of Silicon,LOCOS)的方式形成。另外,垂直雙擴散金氧半功率元件700的上視圖可參照第2、3圖。另外,垂直雙擴散金氧半功率元件700的操作原理都和垂直雙擴散金氧半功率元件100相同,在此不再贅述。
綜上所述,本發明所提供的垂直雙擴散金氧半功率元件是利用該相
同製程整合該垂直雙擴散金氧半功率電晶體和至少一熱敏單元。因為該至少一熱敏單元是形成在該垂直雙擴散金氧半功率電晶體的旁邊,所以該至少一熱敏單元的等效順向偏壓將快速地隨該垂直雙擴散金氧半功率電晶體的操作溫度反向變化。也就是說該垂直雙擴散金氧半功率元件的控制器即可根據該至少一熱敏單元的等效順向偏壓的變化和該過溫度保護參考溫度,快速地判斷是否啟動該垂直雙擴散金氧半功率元件內的過溫度保護。因此,相較於現有技術,因為該垂直雙擴散金氧半功率元件的控制器可快速地判斷是否啟動該垂直雙擴散金氧半功率元件內的過溫度保護,所以本發明並不會有現有技術太慢啟動過溫度保護的缺點。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
Claims (9)
- 一種具有熱敏單元的垂直雙擴散金氧半(vertical double diffused metal-oxide-semiconductor,VDMOS)功率元件,包含:一垂直雙擴散金氧半功率電晶體,包含:一第一金屬層;一具有一第一導電類型的基底層,形成於該第一金屬層之上;一具有該第一導電類型的磊晶層,形成於該基底層之上;一第二金屬層;及複數條第一多晶矽層,該複數條第一多晶矽層的每一第一多晶矽層對應一第一氧化層、具有一第二導電類型的第一摻雜井和第二摻雜井、具有該第一導電類型的第一摻雜區和第二摻雜區和一第二氧化層,其中該第一氧化層形成於該磊晶層之上,該第一摻雜井和該第二摻雜井形成於該磊晶層之中,該第一摻雜區和該第二摻雜區分別形成於該第一摻雜井和該第二摻雜井之中,該每一第一多晶矽層形成於該第一氧化層之上,該第二氧化層包覆該每一第一多晶矽層,以及該第二金屬層形成於該第一摻雜井、該第二摻雜井、該第一摻雜區、該第二摻雜區和該第二氧化層之上;及至少一熱敏單元,形成於該磊晶層之上,其中該至少一熱敏單元是用以偵測該垂直雙擴散金氧半功率電晶體在操作時的溫度,且該垂直雙擴散金氧半功率電晶體和該至少一熱敏單元是共用一相同製程,其中該至少一熱敏單元中的每一熱敏單元包含:一第二多晶矽層,形成於一第三氧化層之上;及一摻雜區,形成於該第二多晶矽層之中;其中該第三氧化層形成於一具有該第二導電類型的深摻雜井之上,以及該深摻雜井形成於該磊晶層之中。
- 如請求項1所述的垂直雙擴散金氧半功率元件,另包含:一耐壓區,其中該深摻雜井和該耐壓區共用一光罩。
- 如請求項1所述的垂直雙擴散金氧半功率元件,其中該第一金屬層是該垂直雙擴散金氧半功率電晶體的汲極,該複數條第一多晶矽層是該垂直雙擴散金氧半功率電晶體的閘極,以及該第二金屬層是該垂直雙擴散金氧半功率電晶體的源極。
- 如請求項1所述的垂直雙擴散金氧半功率元件,其中該第一導電類型是N型,且該第二導電類型是P型。
- 如請求項1所述的垂直雙擴散金氧半功率元件,其中該基底層的離子濃度大於該磊晶層的離子濃度。
- 一種具有熱敏單元的垂直雙擴散金氧半(vertical double diffused metal-oxide-semiconductor,VDMOS)功率元件,包含:一垂直雙擴散金氧半功率電晶體,包含:一第一金屬層;一具有一第一導電類型的基底層,形成於該第一金屬層之上;一具有該第一導電類型的磊晶層,形成於該基底層之上;一第二金屬層;及複數條第一多晶矽層,該複數條第一多晶矽層的每一第一多晶矽層對應一第一氧化層、具有一第二導電類型的第一摻雜井和第二摻雜井、具有該第一導電類型的第一摻雜區和第二摻雜區和一第二氧化層,其中該第一氧化層形成於該磊晶層之上,該第一摻雜井和該第二摻雜井形成於該磊晶層之中,該第一摻雜區和該第二摻雜區分別形成於該第一摻雜井和該第二摻雜井之中,該每一第一多晶矽層形成於該第一氧化層之上,該第二氧化層包覆該每一第一多晶矽層,以及該第二金屬層形成於該第一摻雜井、該第二摻雜井、該第一摻雜區、該第二摻雜區和該第二氧化層之上;及至少一熱敏單元,形成於該磊晶層之上,其中該至少一熱敏單元是用以偵測該垂直雙擴散金氧半功率電晶體在操作時的溫度,且該垂直雙擴散金氧半功率電晶體和該至少一熱敏單元是共用一相同製程,其中該至少一熱敏單元中的每一熱敏單元包含:一第二多晶矽層,形成於一場氧化層之上;及一摻雜區,形成於該第二多晶矽層之中;其中該場氧化層形成於一具有該第二導電類型的深摻雜井之上,以及該深摻雜井形成於該磊晶層之中。
- 如請求項6所述的垂直雙擴散金氧半功率元件,其中該場氧化層是通過一區域矽氧化法(Local Oxidation of Silicon,LOCOS)的方式形成。
- 如請求項1或6所述的垂直雙擴散金氧半功率元件,其中該基底層、該磊晶層、該第一摻雜井、該第二摻雜井、該第一摻雜區、該第二摻雜區、該深摻雜井和該摻雜區是通過一離子佈植的方式形成。
- 一種具有熱敏單元的垂直雙擴散金氧半(vertical double diffused metal-oxide-semiconductor,VDMOS)功率元件,包含:一垂直雙擴散金氧半功率電晶體,包含:一第一金屬層;一具有一第一導電類型的基底層,形成於該第一金屬層之上;一具有該第一導電類型的磊晶層,形成於該基底層之上;一第二金屬層;及複數條第一多晶矽層,該複數條第一多晶矽層的每一第一多晶矽層對應一第一氧化層、具有一第二導電類型的第一摻雜井和第二摻雜井、具有該第一導電類型的第一摻雜區和第二摻雜區和一第二氧化層,其中該第一氧化層形成於該磊晶層之上,該第一摻雜井和該第二摻雜井形成於該磊晶層之中,該第一摻雜區和該第二摻雜區分別形成於該第一摻雜井和該第二摻雜井之中,該每一第一多晶矽層形成於該第一氧化層之上,該第二氧化層包覆該每一第一多晶矽層,以及該第二金屬層形成於該第一摻雜井、該第二摻雜井、該第一摻雜區、該第二摻雜區和該第二氧化層之上,其中該第一摻雜井和該第二摻雜井是根據該每一第一多晶矽層以一自我對齊(self-align)的方式形成;及至少一熱敏單元,形成於該磊晶層之上,其中該至少一熱敏單元是用以偵測該垂直雙擴散金氧半功率電晶體在操作時的溫度,且該垂直雙擴散金氧半功率電晶體和該至少一熱敏單元是共用一相同製程。
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TW201721832A (zh) * | 2015-12-10 | 2017-06-16 | 力智電子股份有限公司 | 具熱感測功能的功率金氧半電晶體晶粒以及積體電路 |
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