JP5147203B2 - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
- Publication number
- JP5147203B2 JP5147203B2 JP2006181305A JP2006181305A JP5147203B2 JP 5147203 B2 JP5147203 B2 JP 5147203B2 JP 2006181305 A JP2006181305 A JP 2006181305A JP 2006181305 A JP2006181305 A JP 2006181305A JP 5147203 B2 JP5147203 B2 JP 5147203B2
- Authority
- JP
- Japan
- Prior art keywords
- channel region
- transistor
- semiconductor layer
- operating part
- operation unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 61
- 230000015556 catabolic process Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 14
- 108091006146 Channels Proteins 0.000 description 83
- 239000010410 layer Substances 0.000 description 56
- 239000002184 metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
2 n−型半導体層
3 第1チャネル領域
4 第2チャネル領域
5 トレンチ
6 ゲート絶縁膜
7 ゲート電極
8 ソース領域
9 ボディ領域
10 半導体基板
11 層間絶縁膜
15m、15s MOSトランジスタ
16 ゲート配線
17 ソース電極
19 ドレイン電極
21 動作部
22 センス部
23 ゲート連結電極
24 ゲートパッド形成領域
25 ガードリング
26 n+型不純物領域
27 シールドメタル
30 半導体基板
33、34 チャネル領域
35m、35s MOSトランジスタ
36 ゲート連結電極
41 動作部
42 センス部
Claims (6)
- 一導電型の半導体層と、
該半導体層表面に設けられた第1動作部と、
前記半導体層表面に設けられ前記第1動作部より面積が小さい第2動作部と、
前記第1動作部に設けられた逆導電型の第1チャネル領域および第1トランジスタと、
前記第2動作部に設けられた逆導電型の第2チャネル領域および第2トランジスタと、
を具備し、
前記第2動作部の周囲に前記第1動作部を配置し、
前記第1チャネル領域と前記第2チャネル領域は、前記第1トランジスタおよび前記第2トランジスタにドレイン−ソース間耐圧の逆方向電圧を印加した際に前記第1チャネル領域および前記第2チャネル領域から前記半導体層に広がる空乏層が互いに接してピンチオフする距離で離間して配置されることを特徴とする絶縁ゲート型半導体装置。 - 一導電型の半導体基板と、
該基板上に設けられた一導電型の半導体層と、
該半導体層表面に設けられた第1動作部と、
該第1動作部と離間して前記半導体層表面に設けられ前記第1動作部より面積が小さい第2動作部と、
前記第1動作部に設けられた逆導電型の第1チャネル領域と、
前記第1動作部に設けられた絶縁ゲート型の第1トランジスタと、
前記第2動作部に設けられた逆導電型の第2チャネル領域と、
前記第2動作部に設けられた絶縁ゲート型の第2トランジスタと、
を具備し、
前記第2動作部の外周は前記第1動作部により完全に囲まれており、
前記第1チャネル領域と前記第2チャネル領域は、前記第1トランジスタおよび前記第2トランジスタにドレイン−ソース間耐圧の逆方向電圧を印加した際に前記第1チャネル領域および前記第2チャネル領域から前記半導体層に広がる空乏層が互いに接してピンチオフする距離で離間して配置されることを特徴とする絶縁ゲート型半導体装置。 - 前記第1動作部において前記第1チャネル領域は矩形状に配置され、該矩形状の各コーナー部の曲率が均一であることを特徴とする請求項1または請求項2に記載の絶縁ゲート型半導体装置。
- 前記第2チャネル領域は矩形状に配置され、該矩形状の各コーナー部の曲率が均一であることを特徴とする請求項1または請求項2に記載の絶縁ゲート型半導体装置。
- 前記第1トランジスタおよび前記第2トランジスタは、それぞれのゲート電極が共通で接続されることを特徴とする請求項1または請求項2に記載の絶縁ゲート型半導体装置。
- 前記第2トランジスタは、前記第1トランジスタの電流を検出するためのトランジスタであることを特徴とする請求項1または請求項2に記載の絶縁ゲート型半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006181305A JP5147203B2 (ja) | 2006-06-30 | 2006-06-30 | 絶縁ゲート型半導体装置 |
TW096123190A TWI373845B (en) | 2006-06-30 | 2007-06-27 | Insulation gate type semiconductor device |
KR1020070064821A KR100914561B1 (ko) | 2006-06-30 | 2007-06-29 | 절연 게이트형 반도체 장치 |
US11/822,028 US7843003B2 (en) | 2006-06-30 | 2007-06-29 | Insulated gate semiconductor device |
CNB2007101273966A CN100502004C (zh) | 2006-06-30 | 2007-07-02 | 绝缘栅型半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006181305A JP5147203B2 (ja) | 2006-06-30 | 2006-06-30 | 絶縁ゲート型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008010723A JP2008010723A (ja) | 2008-01-17 |
JP5147203B2 true JP5147203B2 (ja) | 2013-02-20 |
Family
ID=38875712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006181305A Active JP5147203B2 (ja) | 2006-06-30 | 2006-06-30 | 絶縁ゲート型半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7843003B2 (ja) |
JP (1) | JP5147203B2 (ja) |
KR (1) | KR100914561B1 (ja) |
CN (1) | CN100502004C (ja) |
TW (1) | TWI373845B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097918B2 (en) * | 2009-08-14 | 2012-01-17 | Infineon Technologies Ag | Semiconductor arrangement including a load transistor and sense transistor |
CN102947934B (zh) * | 2010-06-24 | 2015-12-02 | 三菱电机株式会社 | 功率半导体器件 |
DE102012102533B3 (de) | 2012-03-23 | 2013-08-22 | Infineon Technologies Austria Ag | Integrierte Leistungstransistorschaltung mit Strommesszelle und Verfahren zu deren Herstellung sowie eine Anordnung diese enthaltend |
US9076805B2 (en) * | 2012-07-14 | 2015-07-07 | Infineon Technologies Ag | Current sense transistor with embedding of sense transistor cells |
JP5758365B2 (ja) * | 2012-09-21 | 2015-08-05 | 株式会社東芝 | 電力用半導体素子 |
US9536944B2 (en) * | 2012-12-04 | 2017-01-03 | Denso Corporation | Semiconductor device and method of manufacturing same |
US9773863B2 (en) * | 2014-05-14 | 2017-09-26 | Infineon Technologies Austria Ag | VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body |
US10468479B2 (en) | 2014-05-14 | 2019-11-05 | Infineon Technologies Austria Ag | VDMOS having a drift zone with a compensation structure |
JP7224247B2 (ja) * | 2019-07-02 | 2023-02-17 | 三菱電機株式会社 | 半導体装置 |
US20220140138A1 (en) * | 2020-11-03 | 2022-05-05 | Cree, Inc. | Protection structures for semiconductor devices with sensor arrangements |
DE112022000930T5 (de) * | 2021-03-26 | 2023-11-16 | Rohm Co., Ltd. | Halbleiterbauteil und verfahren zur herstellung eines halbleiterbauteils |
CN117280477B (zh) | 2022-03-11 | 2024-06-25 | 新唐科技日本株式会社 | 半导体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2973588B2 (ja) * | 1991-06-10 | 1999-11-08 | 富士電機株式会社 | Mos型半導体装置 |
US5461252A (en) * | 1992-10-06 | 1995-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers |
JPH07161992A (ja) * | 1993-10-14 | 1995-06-23 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
JP3156487B2 (ja) * | 1994-03-04 | 2001-04-16 | 富士電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
DE19534604C1 (de) * | 1995-09-18 | 1996-10-24 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung |
JPH09162391A (ja) * | 1995-12-06 | 1997-06-20 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
JP3349029B2 (ja) * | 1996-01-16 | 2002-11-20 | 株式会社東芝 | 半導体装置 |
JP3914328B2 (ja) * | 1997-03-25 | 2007-05-16 | 株式会社ルネサステクノロジ | 電流検出セル付トレンチゲート半導体装置および電力変換装置 |
EP0892435A1 (en) * | 1997-07-14 | 1999-01-20 | STMicroelectronics S.r.l. | Integrated semiconductor transistor with current sensing |
US6906362B2 (en) * | 2002-01-22 | 2005-06-14 | Fairchild Semiconductor Corporation | Method of isolating the current sense on power devices while maintaining a continuous stripe cell |
JP5014534B2 (ja) | 2001-04-13 | 2012-08-29 | オンセミコンダクター・トレーディング・リミテッド | Mosfet |
US6906399B2 (en) * | 2002-11-04 | 2005-06-14 | Delphi Technologies, Inc. | Integrated circuit including semiconductor power device and electrically isolated thermal sensor |
JP4622214B2 (ja) * | 2003-07-30 | 2011-02-02 | トヨタ自動車株式会社 | 電流センシング機能を有する半導体装置 |
-
2006
- 2006-06-30 JP JP2006181305A patent/JP5147203B2/ja active Active
-
2007
- 2007-06-27 TW TW096123190A patent/TWI373845B/zh not_active IP Right Cessation
- 2007-06-29 KR KR1020070064821A patent/KR100914561B1/ko not_active IP Right Cessation
- 2007-06-29 US US11/822,028 patent/US7843003B2/en active Active
- 2007-07-02 CN CNB2007101273966A patent/CN100502004C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008010723A (ja) | 2008-01-17 |
US7843003B2 (en) | 2010-11-30 |
CN100502004C (zh) | 2009-06-17 |
KR100914561B1 (ko) | 2009-08-31 |
US20080001221A1 (en) | 2008-01-03 |
KR20080002658A (ko) | 2008-01-04 |
TW200805664A (en) | 2008-01-16 |
CN101097921A (zh) | 2008-01-02 |
TWI373845B (en) | 2012-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5147203B2 (ja) | 絶縁ゲート型半導体装置 | |
JP5048273B2 (ja) | 絶縁ゲート型半導体装置 | |
US20230112583A1 (en) | Semiconductor device and semiconductor package | |
US7385250B2 (en) | Semiconductor device | |
JP5511124B2 (ja) | 絶縁ゲート型半導体装置 | |
JP2008235788A (ja) | 絶縁ゲート型半導体装置 | |
JP2008085188A (ja) | 絶縁ゲート型半導体装置 | |
CN105810737A (zh) | 半导体装置 | |
JP5798024B2 (ja) | 半導体装置 | |
KR20160088962A (ko) | 반도체 장치 | |
JP2008251923A (ja) | 半導体装置 | |
US10566412B2 (en) | High voltage junction field effect transistor (JFET) with spiral voltage divider | |
CN113302732B (zh) | 半导体装置 | |
JP2009004707A (ja) | 絶縁ゲート型半導体装置 | |
JP4086559B2 (ja) | 半導体装置 | |
JP2002222953A (ja) | 半導体装置 | |
JP2011009630A (ja) | 保護ダイオード | |
US20140091387A1 (en) | Semiconductor device | |
JP3659195B2 (ja) | 半導体装置及びその製造方法 | |
JP2009016725A (ja) | 半導体装置 | |
US20230326922A1 (en) | Semiconductor device | |
JP2001094092A (ja) | パワーmosトランジスタ | |
JP2007158098A (ja) | 半導体装置 | |
JP2023131415A (ja) | 半導体装置 | |
CN116529877A (zh) | 半导体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090601 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120327 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120329 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120622 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120724 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121011 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121127 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5147203 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151207 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151207 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151207 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151207 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151207 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |