TWI655048B - 穿透雷射光束的檢測方法 - Google Patents

穿透雷射光束的檢測方法 Download PDF

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Publication number
TWI655048B
TWI655048B TW104133715A TW104133715A TWI655048B TW I655048 B TWI655048 B TW I655048B TW 104133715 A TW104133715 A TW 104133715A TW 104133715 A TW104133715 A TW 104133715A TW I655048 B TWI655048 B TW I655048B
Authority
TW
Taiwan
Prior art keywords
laser beam
photosensitive
penetrating
workpiece
photosensitive sheet
Prior art date
Application number
TW104133715A
Other languages
English (en)
Chinese (zh)
Other versions
TW201618876A (zh
Inventor
相川力
遠藤智裕
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201618876A publication Critical patent/TW201618876A/zh
Application granted granted Critical
Publication of TWI655048B publication Critical patent/TWI655048B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/48—Photometry, e.g. photographic exposure meter using chemical effects
    • G01J1/50—Photometry, e.g. photographic exposure meter using chemical effects using change in colour of an indicator, e.g. actinometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Laser Beam Processing (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Dicing (AREA)
  • Plasma & Fusion (AREA)
TW104133715A 2014-11-27 2015-10-14 穿透雷射光束的檢測方法 TWI655048B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-239681 2014-11-27
JP2014239681A JP6433264B2 (ja) 2014-11-27 2014-11-27 透過レーザービームの検出方法

Publications (2)

Publication Number Publication Date
TW201618876A TW201618876A (zh) 2016-06-01
TWI655048B true TWI655048B (zh) 2019-04-01

Family

ID=56079024

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104133715A TWI655048B (zh) 2014-11-27 2015-10-14 穿透雷射光束的檢測方法

Country Status (5)

Country Link
US (1) US9494513B2 (ko)
JP (1) JP6433264B2 (ko)
KR (1) KR102331288B1 (ko)
CN (1) CN105643118B (ko)
TW (1) TWI655048B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6757185B2 (ja) * 2016-06-08 2020-09-16 株式会社ディスコ レーザー光線の検査方法
JP6749727B2 (ja) * 2016-10-14 2020-09-02 株式会社ディスコ 検査用ウエーハ及び検査用ウエーハの使用方法
KR102104859B1 (ko) 2019-05-14 2020-04-27 (주)와이에스티 연성회로기판의 마이크 홀 레이저 가공방법
JP7465425B2 (ja) 2020-07-14 2024-04-11 株式会社東京精密 検査用ウェーハの検査方法及び検査装置並びに検査用ウェーハ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5838984B2 (ja) * 1975-01-13 1983-08-26 ザ・アソシエイテツド・プレス フアクシミリ再生装置
JP4776911B2 (ja) * 2004-11-19 2011-09-21 キヤノン株式会社 レーザ加工装置およびレーザ加工方法

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DD200295A1 (de) * 1981-08-12 1983-04-06 Guenter Claus Led-anzeige mit hohem informationsgehalt
US5331371A (en) * 1990-09-26 1994-07-19 Canon Kabushiki Kaisha Alignment and exposure method
US5374291A (en) * 1991-12-10 1994-12-20 Director-General Of Agency Of Industrial Science And Technology Method of processing photosensitive glass
JPH06270464A (ja) * 1993-03-19 1994-09-27 Fuji Xerox Co Ltd 集光位置検出装置
JP2003048086A (ja) * 2001-07-31 2003-02-18 Canon Inc エネルギービーム加工装置及び加工方法
JPWO2003046962A1 (ja) * 2001-11-26 2005-04-14 株式会社ニコン 評価方法及び露光装置の製造方法
KR101394764B1 (ko) * 2003-12-03 2014-05-27 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품
WO2005071491A2 (en) * 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
JP2006091341A (ja) * 2004-09-22 2006-04-06 Fuji Photo Film Co Ltd 走査露光用光源装置並びに走査露光方法及び走査露光装置
TW200633852A (en) * 2005-03-23 2006-10-01 Fuji Photo Film Co Ltd Apparatus for and method of manufacturing photosensitive laminated body
JP2006319198A (ja) * 2005-05-13 2006-11-24 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法およびレーザー加工装置
JP2008050219A (ja) * 2006-08-25 2008-03-06 Shibaura Mechatronics Corp スクライブ溝形成装置、割断装置およびスクライブ溝形成方法
JP2008053500A (ja) * 2006-08-25 2008-03-06 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2010087433A (ja) * 2008-10-02 2010-04-15 Disco Abrasive Syst Ltd レーザ加工方法、レーザ加工装置およびチップの製造方法
JP2011134955A (ja) * 2009-12-25 2011-07-07 Disco Abrasive Syst Ltd 板状材料からのチップ状部品の生産方法
JP5615107B2 (ja) 2010-09-10 2014-10-29 株式会社ディスコ 分割方法
JP5846764B2 (ja) * 2011-06-01 2016-01-20 株式会社ディスコ ウエーハの加工方法
JP5797963B2 (ja) * 2011-07-25 2015-10-21 株式会社ディスコ レーザー光線のスポット形状検出方法
JP6062315B2 (ja) * 2013-04-24 2017-01-18 株式会社ディスコ ウエーハの加工方法
JP6208521B2 (ja) * 2013-10-07 2017-10-04 株式会社ディスコ ウエーハの加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5838984B2 (ja) * 1975-01-13 1983-08-26 ザ・アソシエイテツド・プレス フアクシミリ再生装置
JP4776911B2 (ja) * 2004-11-19 2011-09-21 キヤノン株式会社 レーザ加工装置およびレーザ加工方法

Also Published As

Publication number Publication date
TW201618876A (zh) 2016-06-01
CN105643118B (zh) 2019-04-26
KR102331288B1 (ko) 2021-11-24
JP6433264B2 (ja) 2018-12-05
JP2016103506A (ja) 2016-06-02
CN105643118A (zh) 2016-06-08
US20160153908A1 (en) 2016-06-02
KR20160063978A (ko) 2016-06-07
US9494513B2 (en) 2016-11-15

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