TWI652739B - 熱處理裝置 - Google Patents
熱處理裝置 Download PDFInfo
- Publication number
- TWI652739B TWI652739B TW106142372A TW106142372A TWI652739B TW I652739 B TWI652739 B TW I652739B TW 106142372 A TW106142372 A TW 106142372A TW 106142372 A TW106142372 A TW 106142372A TW I652739 B TWI652739 B TW I652739B
- Authority
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- Taiwan
- Prior art keywords
- semiconductor wafer
- light
- flash
- substrate
- chamber
- Prior art date
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000031700 light absorption Effects 0.000 claims abstract description 67
- 230000002093 peripheral effect Effects 0.000 claims abstract description 50
- 239000010453 quartz Substances 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000007246 mechanism Effects 0.000 claims description 35
- 238000002834 transmittance Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 abstract description 152
- 238000009826 distribution Methods 0.000 abstract description 17
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 145
- 229910052736 halogen Inorganic materials 0.000 description 72
- 150000002367 halogens Chemical class 0.000 description 72
- 238000012546 transfer Methods 0.000 description 50
- 239000007789 gas Substances 0.000 description 49
- 230000005855 radiation Effects 0.000 description 22
- 239000012535 impurity Substances 0.000 description 16
- 238000012545 processing Methods 0.000 description 15
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 12
- 229910052724 xenon Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/14—Arrangements of heating devices
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Abstract
本發明提供一種能夠於不產生因閃光照射而導致之損傷之情況下使基板之面內溫度分佈均勻的熱處理裝置。 本發明利用連續點亮燈自保持於石英之承托器之半導體晶圓之下方進行光照射而進行預加熱,其後,利用閃光燈自上方進行閃光照射。以接近保持於承托器之半導體晶圓之周緣部之方式設置光吸收環。光吸收環吸收紅外光,且使可見光透過。於預加熱時,光吸收環吸收自連續點亮燈出射之光而升溫,補償自晶圓周緣部釋放之熱,從而使半導體晶圓之面內溫度分佈均勻。另一方面,由於閃光透過光吸收環,故而能夠防止因閃光照射所導致之光吸收環之損傷。
Description
本發明係關於一種藉由向半導體晶圓等薄板狀精密電子基板(以下簡稱為「基板」)照射閃光而對該基板進行加熱之熱處理裝置。
於半導體元件之製造製程中,雜質導入係用於在半導體晶圓內形成pn接面所必需之步驟。目前,雜質導入通常係藉由離子注入法及其後之退火法而進行。離子注入法係使硼(B)、砷(As)、磷(P)等雜質元素離子化並於高加速電壓下使其等碰撞半導體晶圓而物理性地進行雜質注入之技術。所注入之雜質藉由退火處理而被活化。此時,若退火時間為數秒左右以上,則所注入之雜質因熱而較深地擴散,結果導致有接合深度變得較要求過深而對良好之元件形成產生妨礙之虞。 因此,作為於極短時間內對半導體晶圓進行加熱之退火技術,近年來,閃光燈退火(FLA)受到關注。閃光燈退火係藉由使用氙閃光燈(以下,於簡稱為「閃光燈」時係指氙閃光燈)向半導體晶圓之表面照射閃光,而僅使注入有雜質之半導體晶圓之表面於極短時間(數毫秒以下)內升溫之熱處理技術。 氙閃光燈之放射分光分佈為紫外線區至近紅外區,波長較先前之鹵素燈短,且與矽之半導體晶圓之基礎吸收帶大致一致。因此,於自氙閃光燈向半導體晶圓照射閃光時,透過光較少而能夠使半導體晶圓急速升溫。又,亦發現只要為數毫秒以下之極短時間之閃光照射,則能夠選擇性地僅使半導體晶圓之表面附近升溫。因此,只要為利用氙閃光燈而進行之極短時間之升溫,則能夠於不使雜質較深地擴散之情況下僅執行雜質活化。 作為使用此種氙閃光燈之熱處理裝置,例如於專利文獻1中揭示有如下裝置:於半導體晶圓之正面側配置閃光燈,於背面側配置鹵素燈,而藉由其等之組合進行所需之熱處理。於專利文獻1所揭示之熱處理裝置中,利用鹵素燈將半導體晶圓預加熱至某種程度之溫度,其後,利用來自閃光燈之閃光照射,將半導體晶圓之正面升溫至所需之處理溫度。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2010-225645號公報
[發明所欲解決之問題] 於專利文獻1所揭示之熱處理裝置中,將圓形之半導體晶圓載置於設置在石英之圓板形狀之板上的複數個微小之支持銷上,而進行熱處理。該圓板形狀之板之直徑大於半導體晶圓之直徑。若將半導體晶圓載置於此種石英之板上而進行利用鹵素燈之預加熱,則自半導體晶圓之外緣部之散熱變得顯著,而容易產生該外緣部分之溫度降低變大而使半導體晶圓之面內溫度分佈變得不均勻之問題。 因此,於專利文獻1中提出,在圓板形狀之板之周緣部設置由碳化矽(SiC)所形成之溫度補償環,而於利用鹵素燈進行預加熱時,溫度補償環升溫,從而補償自半導體晶圓之外緣部釋放之熱。如此一來,便能夠使預加熱階段中之半導體晶圓之面內溫度分佈均勻。 然而,碳化矽之溫度補償環產生了新的問題,即,於繼預加熱之後之閃光加熱時因自閃光燈出射之閃光而受到熱損傷。 本發明係鑒於上述問題而完成者,其目的在於提供一種能夠於不產生因閃光照射而導致之損傷之情況下使基板之面內溫度分佈均勻的熱處理裝置。 [解決問題之技術手段] 為了解決上述問題,技術方案1之發明係一種熱處理裝置,其特徵在於,其係藉由向基板照射閃光而對該基板進行加熱者,且具備:腔室,其收容基板;石英之承托器,其於上述腔室內保持上述基板;連續點亮燈,其設置於上述腔室之下方,且向保持於上述承托器之上述基板之下表面照射光;閃光燈,其設置於上述腔室之上方,且向保持於上述承托器之上述基板之上表面照射閃光;及紅外光吸收構件,其以接近保持於上述承托器之上述基板之周緣部之方式設置,吸收紅外光,且使可見光透過。 又,技術方案2之發明係一種熱處理裝置,其特徵在於,其係藉由向基板照射閃光而對該基板進行加熱者,且具備:腔室,其收容基板;石英之承托器,其於上述腔室內保持上述基板;連續點亮燈,其設置於上述腔室之下方,且向保持於上述承托器之上述基板之下表面照射光;閃光燈,其設置於上述腔室之上方,且向保持於上述承托器之上述基板之上表面照射閃光;及紅外光吸收構件,其以接近保持於上述承托器之上述基板之周緣部之方式設置,紅外光之透過率為20%以下,且可見光之透過率為60%以上。 又,技術方案3之發明係如技術方案1或技術方案2之發明之熱處理裝置,其特徵在於,進而具備於上述腔室內使上述紅外光吸收構件上下移動之驅動機構。 又,技術方案4之發明係如技術方案1或技術方案2之發明之熱處理裝置,其特徵在於,上述紅外光吸收構件被石英之被覆構件所覆蓋。 又,技術方案5之發明係如技術方案1或技術方案2之發明之熱處理裝置,其特徵在於,上述承托器之平面尺寸小於上述基板之平面尺寸。 [發明之效果] 根據技術方案1以及技術方案3至技術方案5之發明,吸收紅外光且使可見光透過之紅外光吸收構件係以接近保持於承托器之基板之周緣部之方式設置,因此,紅外光吸收構件吸收來自連續點亮燈之光而補償自基板周緣部釋放之熱,並且閃光透過紅外光吸收構件,而能夠於不產生因閃光照射而導致之損傷之情況下使基板之面內溫度分佈均勻。 根據技術方案2以及技術方案3至技術方案5之發明,紅外光之透過率為20%以下且可見光之透過率為60%以上之紅外光吸收構件係以接近保持於承托器之基板之周緣部之方式設置,因此,紅外光吸收構件吸收來自連續點亮燈之光而補償自基板周緣部釋放之熱,並且閃光透過紅外光吸收構件,而能夠於不產生因閃光照射而導致之損傷之情況下使基板之面內溫度分佈均勻。 尤其是,根據技術方案3之發明,具備於腔室內使紅外光吸收構件上下移動之驅動機構,因此,能夠調整利用紅外光吸收構件所進行之基板周緣部之加熱之程度。 尤其是,根據技術方案4之發明,紅外光吸收構件被石英之被覆構件所覆蓋,因此,即便於該紅外光吸收構件中含有不佳之成分,亦能夠防止該種成分附著於基板。 尤其是,根據技術方案5之發明,承托器之平面尺寸小於基板之平面尺寸,因此,能夠抑制自基板周緣部之散熱,而使基板之面內溫度分佈更均勻。
以下,一面參照圖式,一面對本發明之實施形態詳細地進行說明。 圖1係表示本發明之熱處理裝置1之構成之縱剖視圖。本實施形態之熱處理裝置1係藉由對作為基板之圓板形狀之半導體晶圓W進行閃光照射而對該半導體晶圓W進行加熱之閃光燈退火裝置。成為處理對象之半導體晶圓W之尺寸並無特別限定,例如為300 mm或450 mm。再者,於圖1及以後之各圖中,為了容易理解,視需要將各部之尺寸或數量誇張或簡化描繪。 熱處理裝置1具備收容半導體晶圓W之腔室6、內置複數個閃光燈FL之閃光加熱部5、及內置複數個鹵素燈HL之鹵素加熱部4。於腔室6之上側設置有閃光加熱部5,並且於下側設置有鹵素加熱部4。又,熱處理裝置1於腔室6之內部具備將半導體晶圓W保持為水平姿勢之保持部7、及於保持部7與裝置外部之間進行半導體晶圓W之交接之移載機構10。進而,熱處理裝置1具備控制設置於鹵素加熱部4、閃光加熱部5及腔室6之各動作機構而執行半導體晶圓W之熱處理的控制部3。 腔室6係於筒狀之腔室側部61之上下安裝石英製之腔室窗而構成。腔室側部61具有上下開口之概略筒形狀,於上側開口安裝有上側腔室窗63並將其閉合,於下側開口安裝有下側腔室窗64並將其閉合。構成腔室6之頂部之上側腔室窗63係藉由石英而形成之圓板形狀構件,且作為使自閃光加熱部5出射之閃光透過至腔室6內之石英窗發揮功能。又,構成腔室6之底部之下側腔室窗64亦係藉由石英而形成之圓板形狀構件,且作為使來自鹵素加熱部4之光透過至腔室6內之石英窗發揮功能。 又,於腔室側部61之內側之壁面之上部安裝有反射環68,且於下部安裝有反射環69。反射環68、69均形成為圓環狀。上側之反射環68藉由自腔室側部61之上側嵌入而安裝。另一方面,下側之反射環69藉由自腔室側部61之下側嵌入且利用省略圖示之螺釘固定而安裝。即,反射環68、69均為裝卸自如地安裝於腔室側部61者。將腔室6之內側空間、即由上側腔室窗63、下側腔室窗64、腔室側部61及反射環68、69所包圍之空間界定為熱處理空間65。腔室側部61及反射環68、69係藉由強度與耐熱性優異之金屬材料(例如不鏽鋼)而形成。 於腔室側部61,形成設置有用以相對於腔室6進行半導體晶圓W之搬入及搬出之搬送開口部(爐口)66。搬送開口部66可藉由閘閥185打開及閉合。搬送開口部66與熱處理空間65連通連接。因此,於閘閥185開放搬送開口部66時,能夠自搬送開口部66向熱處理空間65搬入半導體晶圓W及自熱處理空間65搬出半導體晶圓W。又,若閘閥185封閉搬送開口部66,則腔室6內之熱處理空間65成為密閉空間。 又,於腔室6之內壁上部形成設置有向熱處理空間65供給處理氣體之氣體供給孔81。氣體供給孔81亦可設置於反射環68。氣體供給孔81經由呈圓環狀地形成於腔室6之側壁內部之緩衝空間82而與氣體供給管83連通連接。氣體供給管83連接於處理氣體供給源85。又,於氣體供給管83之路徑中途插介有閥84。若閥84打開,則自處理氣體供給源85向緩衝空間82進給處理氣體。流入至緩衝空間82之處理氣體以於流體阻力較氣體供給孔81小之緩衝空間82內擴散之方式流動,而自氣體供給孔81供給至熱處理空間65內。作為處理氣體,可使用氮氣(N2
)等惰性氣體、或氫氣(H2
)、氨氣(NH3
)等反應性氣體(於本實施形態中為氮氣)。 另一方面,於腔室6之內壁下部形成設置有供熱處理空間65內之氣體排出之氣體排氣孔86。氣體排氣孔86亦可設置於反射環69。氣體排氣孔86經由呈圓環狀地形成於腔室6之側壁內部之緩衝空間87而與氣體排氣管88連通連接。氣體排氣管88連接於排氣部190。又,於氣體排氣管88之路徑中途插介有閥89。若閥89打開,則熱處理空間65之氣體自氣體排氣孔86經過緩衝空間87而向氣體排氣管88排出。再者,氣體供給孔81及氣體排氣孔86可沿腔室6之周向設置有複數個,或亦可為狹縫狀者。又,處理氣體供給源85及排氣部190可為設置於熱處理裝置1之機構,亦可為供設置熱處理裝置1之工廠之設施。 又,於搬送開口部66之前端亦連接有供熱處理空間65內之氣體排出之氣體排氣管191。氣體排氣管191經由閥192而與排氣部190連接。藉由打開閥192,使腔室6內之氣體經由搬送開口部66排出。 圖2係保持部7之俯視圖。圖3係保持部7之縱剖視圖。保持部7係具備支持部72及承托器74而構成。支持部72及承托器74均係藉由石英而形成。即,整個保持部7係藉由石英而形成。 承托器74係由安裝於腔室6之內壁面之4個支持部72支持。承托器74係於圓板形狀之保持板75之上表面立設複數個基板支持銷77而構成。保持板75係藉由石英而形成之大致圓形之平板狀構件。保持板75之直徑小於半導體晶圓W之直徑。即,承托器74之平面尺寸小於半導體晶圓W之平面尺寸。 於保持板75之上表面,立設有複數個基板支持銷77。於本實施形態中,沿與圓板形狀之保持板75之外周圓為同心圓之圓周上,每隔30°地立設有共計12個基板支持銷77。配置有12個基板支持銷77之圓之直徑(對向之基板支持銷77間之距離)小於半導體晶圓W之直徑,若半導體晶圓W之直徑為300 mm,則為270 mm~280 mm(於本實施形態中為270 mm)。各個基板支持銷77係由石英而形成。複數個基板支持銷77可設為藉由熔接而設置於保持板75之上表面,亦可設為與保持板75加工為一體。 承托器74之保持板75之周緣部係由4個支持部72支持。具體而言,藉由形成於支持部72之前端之沿鉛直方向延伸之部分之上端支持保持板75之下表面周緣部。於承托器74由4個支持部72支持之狀態下,承托器74之保持板75成為水平姿勢(法線與鉛直方向一致之姿勢)。即,保持板75之上表面成為水平面。 搬入至腔室6之半導體晶圓W係以水平姿勢載置並保持於承托器74之上。此時,半導體晶圓W由立設於保持板75上之12個基板支持銷77支持,而保持於承托器74。更嚴密而言,12個基板支持銷77之上端部與半導體晶圓W之下表面接觸而支持該半導體晶圓W。由於12個基板支持銷77之高度(自基板支持銷77之上端至保持板75之上表面之距離)均一,故而能夠藉由12個基板支持銷77將半導體晶圓W支持為水平姿勢。 如圖2所示,於承托器74之保持板75,上下貫通地形成有開口部78。開口部78係為了供放射溫度計120(參照圖1)接受自半導體晶圓W之下表面放射之放射光(紅外光)而設置。即,放射溫度計120經由開口部78接受自半導體晶圓W之下表面放射之光,且藉由另置之檢測器測定該半導體晶圓W之溫度。進而,於承托器74之保持板75,貫穿設置有供下文所述之移載機構10之頂起銷12貫通以進行半導體晶圓W之交接的4個貫通孔79。 又,以圍繞圓板形狀之承托器74之周圍之方式配置有光吸收環20。圖4係將光吸收環20之附近放大之圖。光吸收環20為圓環形狀之構件。圓環形狀之光吸收環20之內徑大於承托器74之保持板75之直徑,且小於半導體晶圓W之直徑。光吸收環20之外徑大於半導體晶圓W之直徑。光吸收環20之厚度可設為適當者。 圖8係表示光吸收環20之透過率之分光特性之圖。如該圖所示,光吸收環20之可見光之透過率為60%以上,另一方面,紅外光之透過率為20%以下。即,光吸收環20係由具有吸收紅外光且使可見光透過之性質的素材形成。作為具有此種特性之素材,例如可使用五鈴精工硝子股份有限公司製造(Isuzu Glass Ltd.)之紅外線吸收濾波器ISK-150。 由於光吸收環20之內徑小於半導體晶圓W之直徑,故而光吸收環20係以接近保持於承托器74之半導體晶圓W之下表面周緣部之方式設置。如圖1、3所示,光吸收環20係以可藉由安裝於腔室6之壁面之升降驅動部25進行升降之方式設置。升降驅動部25藉由使光吸收環20在保持於承托器74之半導體晶圓W之周緣部之下方如圖4之箭頭AR4所示般上下移動,而調整該半導體晶圓W之下表面周緣部與光吸收環20之間隔d。 圖5係移載機構10之俯視圖。又,圖6係移載機構10之側視圖。移載機構10具備2根移載臂11。移載臂11被設為如沿著大致圓筒狀之腔室側部61之內壁之圓弧形狀。於各個移載臂11立設有2根頂起銷12。各移載臂11被設為可藉由水平移動機構13旋動。水平移動機構13使一對移載臂11在相對於保持部7進行半導體晶圓W之移載之移載動作位置(圖5之實線位置)與在俯視下不與保持於保持部7之半導體晶圓W重疊之退避位置(圖5之二點鏈線位置)之間水平移動。作為水平移動機構13,可為藉由個別之馬達而使各移載臂11分別旋動者,亦可為使用連桿機構而藉由1個馬達使一對移載臂11連動地旋動者。 又,一對移載臂11藉由升降機構14而與水平移動機構13一起升降移動。若升降機構14使一對移載臂11於移載動作位置處上升,則共計4根頂起銷12通過貫穿設置於承托器74之貫通孔79(參照圖2),且頂起銷12之上端自承托器74之上表面突出。另一方面,若升降機構14使一對移載臂11於移載動作位置處下降而將頂起銷12自貫通孔79拔出,且水平移動機構13使一對移載臂11以打開之方式移動,則各移載臂11移動至退避位置。再者,於設置有移載機構10之驅動部(水平移動機構13及升降機構14)之部位之附近亦設置有省略圖示之排氣機構,該排氣機構係以將移載機構10之驅動部周邊之氣體排出至腔室6之外部之方式而構成。 返回至圖1,設置於腔室6之上方之閃光加熱部5係於殼體51之內側具備包含複數根(於本實施形態中為30根)氙閃光燈FL之光源、及以覆蓋該光源之上方之方式設置之反射器52而構成。又,於閃光加熱部5之殼體51之底部安裝有燈光放射窗53。構成閃光加熱部5之底部之燈光放射窗53係藉由石英而形成之板狀之石英窗。藉由將閃光加熱部5設置於腔室6之上方,而使燈光放射窗53與上側腔室窗63相對向。閃光燈FL自腔室6之上方經由燈光放射窗53及上側腔室窗63而向熱處理空間65照射閃光。 複數個閃光燈FL分別為具有長條之圓筒形狀之棒狀燈,且以各自之長度方向沿保持於保持部7之半導體晶圓W之主面(即沿水平方向)相互平行之方式呈平面狀地排列。因此,由閃光燈FL之排列而形成之平面亦為水平面。 氙閃光燈FL具備於其內部封入有氙氣且於其兩端部配設有連接於電容器之陽極及陰極的棒狀之玻璃管(放電管)、及附設於該玻璃管之外周面上之觸發電極。由於氙氣就電性而言為絕緣體,故而即便於電容器中儲存有電荷,於通常之狀態下亦不會在玻璃管內流動有電。然而,於對觸發電極施加高電壓而破壞絕緣之情形時,電容器所儲存之電會瞬時流向玻璃管內,藉由此時之氙之原子或分子之激發而放出光。於此種氙閃光燈FL中,由於將預先儲存於電容器之靜電能量轉換為0.1毫秒至100毫秒之極短之光脈衝,故而與如鹵素燈HL之連續點亮之光源相比,具有能夠照射極強之光之特徵。即,閃光燈FL係於未達1秒之極短之時間內瞬間發光之脈衝發光燈。再者,閃光燈FL之發光時間可根據對閃光燈FL進行電力供給之燈電源之線圈常數而進行調整。 又,反射器52於複數個閃光燈FL之上方以覆蓋其等整體之方式設置。反射器52之基本功能係將自複數個閃光燈FL出射之閃光反射至熱處理空間65之側的功能。反射器52係由鋁合金板所形成,其表面(面對閃光燈FL之側之面)藉由噴砂處理而實施有粗面化加工。 設置於腔室6之下方之鹵素加熱部4於殼體41之內側內置有複數根(於本實施形態中為40根)鹵素燈HL。鹵素加熱部4係利用複數個鹵素燈HL自腔室6之下方經由下側腔室窗64向熱處理空間65進行光照射而對半導體晶圓W進行加熱之光照射部。 圖7係表示複數個鹵素燈HL之配置之俯視圖。40根鹵素燈HL被分為上下2段而配置。於接近保持部7之上段配設有20根鹵素燈HL,並且於較上段距保持部7更遠之下段亦配設有20根鹵素燈HL。各鹵素燈HL係具有長條之圓筒形狀之棒狀燈。上段、下段均係20根鹵素燈HL以各自之長度方向沿保持於保持部7之半導體晶圓W之主面(即沿水平方向)相互平行之方式而排列。因此,上段、下段均係由鹵素燈HL之排列而形成之平面為水平面。 又,如圖7所示,上段、下段均係相較於與保持於保持部7之半導體晶圓W之中央部對向之區域,與周緣部對向之區域中之鹵素燈HL之配設密度變高。即,上下段均係相較於燈排列之中央部,以周緣部之鹵素燈HL之配設間距較短。因此,可於藉由來自鹵素加熱部4之光照射進行加熱時對容易產生溫度降低之半導體晶圓W之周緣部進行更多光量之照射。 又,由上段之鹵素燈HL所構成之燈群與由下段之鹵素燈HL所構成之燈群以呈格子狀地交叉之方式排列。即,以配置於上段之20根鹵素燈HL之長度方向與配置於下段之20根鹵素燈HL之長度方向相互正交之方式配設有共計40根鹵素燈HL。 鹵素燈HL係藉由對配設於玻璃管內部之燈絲通電,使燈絲白熾化而發光之燈絲式之光源。於玻璃管之內部,封入有向氮氣或氬氣等惰性氣體微量導入鹵素元素(碘、溴等)而得之氣體。藉由導入鹵素元素,能夠抑制燈絲之折損,並且將燈絲之溫度設定為高溫。因此,鹵素燈HL與通常之白熾燈泡相比,具有壽命較長且能夠連續地照射強光之特性。即,鹵素燈HL係連續發光至少1秒以上之連續點亮燈。又,鹵素燈HL由於為棒狀燈,故而壽命較長,且藉由使鹵素燈HL沿水平方向配置而成為向上方之半導體晶圓W之放射效率優異者。 又,於鹵素加熱部4之殼體41內,於2段鹵素燈HL之下側亦設置有反射器43(圖1)。反射器43將自複數個鹵素燈HL出射之光反射至熱處理空間65之側。 控制部3控制設置於熱處理裝置1之上述之各種動作機構。作為控制部3之硬體之構成與一般之電腦相同。即,控制部3具備作為進行各種運算處理之電路之CPU(Central Processing Unit,中央處理單元)、作為記憶基本程式之唯讀之記憶體之ROM(Read Only Memory,唯讀記憶體)、作為記憶各種資訊之讀寫自如之記憶體之RAM(Random Access Memory,隨機存取記憶體)及預先記憶控制用軟體或資料等之磁碟。藉由控制部3之CPU執行特定之處理程式而進行熱處理裝置1中之處理。 除上述構成以外,熱處理裝置1為了防止於半導體晶圓W之熱處理時因自鹵素燈HL及閃光燈FL產生之熱能導致鹵素加熱部4、閃光加熱部5及腔室6之過度之溫度上升,還具備各種冷卻用之構造。例如,於腔室6之壁體設置有水冷管(省略圖示)。又,鹵素加熱部4及閃光加熱部5被設為於內部形成氣體流而排熱之空冷構造。又,亦對上側腔室窗63與燈光放射窗53之間隙供給空氣,而將閃光加熱部5及上側腔室窗63冷卻。 接下來,對熱處理裝置1中之半導體晶圓W之處理順序進行說明。此處成為處理對象之半導體晶圓W為藉由離子注入法而添加有雜質(離子)之半導體基板。該雜質之活化係藉由利用熱處理裝置1所進行之閃光照射加熱處理(退火)而執行。以下所說明之熱處理裝置1之處理順序係藉由控制部3控制熱處理裝置1之各動作機構而進行。 首先,打開用於供氣之閥84,並且打開排氣用之閥89、192,而開始進行對腔室6內之供氣排氣。若閥84打開,則自氣體供給孔81向熱處理空間65供給氮氣。又,若閥89打開,則自氣體排氣孔86排出腔室6內之氣體。藉此,自腔室6內之熱處理空間65之上部供給之氮氣向下方流動而自熱處理空間65之下部排出。 又,藉由打開閥192,自搬送開口部66亦排出腔室6內之氣體。進而,藉由省略圖示之排氣機構亦排出移載機構10之驅動部周邊之氣體。再者,於熱處理裝置1中之半導體晶圓W之熱處理時,將氮氣持續地供給至熱處理空間65,其供給量根據處理步驟而適當變更。 繼而,閘閥185打開而使搬送開口部66開放,藉由裝置外部之搬送機器人將成為處理對象之半導體晶圓W經由搬送開口部66搬入至腔室6內之熱處理空間65。此時,有伴隨半導體晶圓W之搬入而夾帶裝置外部之氣體之虞,但由於持續向腔室6供給氮氣,故而氮氣自搬送開口部66流出,而能夠將該種外部氣體之夾帶抑制為最小限度。 藉由搬送機器人而搬入之半導體晶圓W進入至保持部7之正上方位置而停止。然後,移載機構10之一對移載臂11自退避位置水平移動至移載動作位置並上升,藉此,頂起銷12通過貫通孔79自承托器74之保持板75之上表面突出而接收半導體晶圓W。此時,頂起銷12上升至較基板支持銷77之上端更靠上方。 於半導體晶圓W載置於頂起銷12後,搬送機器人自熱處理空間65退出,且藉由閘閥185而封閉搬送開口部66。然後,一對移載臂11下降,藉此,半導體晶圓W自移載機構10被交付至保持部7之承托器74,且以水平姿勢自下方被保持。半導體晶圓W由立設於保持板75上之複數個基板支持銷77支持,而保持於承托器74。又,半導體晶圓W以進行過圖案形成且注入有雜質之正面作為上表面,而保持於保持部7。於由複數個基板支持銷77所支持之半導體晶圓W之背面(與正面相反之側之主面)與保持板75之上表面之間,形成特定之間隔。下降至承托器74之下方之一對移載臂11藉由水平移動機構13而退避至退避位置。 又,於將半導體晶圓W搬入至腔室6時,於承托器74之周圍配置有光吸收環20。光吸收環20藉由升降驅動部25移動至其上表面變得低於基板支持銷77之上端之高度位置。因此,於半導體晶圓W保持於承托器74時,該半導體晶圓W之下表面周緣部與光吸收環20接近對向(圖3、4)。於半導體晶圓W保持於承托器74後,以半導體晶圓W之下表面周緣部與光吸收環20之間隔d成為預先設定之值之方式,藉由升降驅動部25調整光吸收環20之高度位置。 於藉由保持部7之承托器74將半導體晶圓W以水平姿勢自下方保持後,將鹵素加熱部4之40根鹵素燈HL一起點亮而開始預加熱(輔助加熱)。自鹵素燈HL出射之鹵素光透過藉由石英而形成之下側腔室窗64及承托器74而自半導體晶圓W之下表面照射。藉由接受來自鹵素燈HL之光照射,半導體晶圓W被預加熱而溫度上升。 於進行利用鹵素燈HL之預加熱時,半導體晶圓W之溫度由放射溫度計120測定。即,放射溫度計120接受自保持於承托器74之半導體晶圓W之下表面經由開口部78而放射之紅外光,而測定升溫中之晶圓溫度。將測定所得之半導體晶圓W之溫度傳送至控制部3。控制部3監測藉由來自鹵素燈HL之光照射而升溫之半導體晶圓W之溫度是否達到特定之預加熱溫度T1,並且控制控制鹵素燈HL之輸出。即,控制部3基於利用放射溫度計120所獲得之測定值,以半導體晶圓W之溫度成為預加熱溫度T1之方式,對鹵素燈HL之輸出進行反饋控制。預加熱溫度T1設為200℃至800℃左右,較佳為350℃至600℃左右(於本實施形態中為600℃)。 於半導體晶圓W之溫度達到預加熱溫度T1後,控制部3將半導體晶圓W暫時維持於該預加熱溫度T1。具體而言,於利用放射溫度計120測定之半導體晶圓W之溫度達到預加熱溫度T1之時間點,控制部3調整鹵素燈HL之輸出,而將半導體晶圓W之溫度維持於大致預加熱溫度T1。 然,於利用鹵素燈HL進行之預加熱之階段,有更容易產生散熱之半導體晶圓W之周緣部之溫度較中央部之溫度降低之傾向。於本實施形態中,以接近保持於承托器74之半導體晶圓W之周緣部之方式設置有光吸收環20。光吸收環20吸收紅外光,且使可見光透過。 於自鹵素燈HL出射之光之分光分佈中,主要為於紅外區中之強度較強。即,鹵素燈HL主要出射紅外光。因此,自鹵素燈HL出射之光亦被光吸收環20吸收。並且,藉由吸收自鹵素燈HL出射之光,光吸收環20之溫度亦上升。藉由與半導體晶圓W之下表面周緣部接近對向之光吸收環20升溫,而利用自光吸收環20之熱放射加熱半導體晶圓W之周緣部。其結果為,自預加熱時之半導體晶圓W之周緣部釋放熱,另一方面,自光吸收環20對該半導體晶圓W之周緣部供熱。換言之,從由鹵素燈HL進行預加熱之半導體晶圓W之周緣部釋放之熱藉由光吸收環20而得以補償,而使預加熱時之半導體晶圓W之面內溫度分佈均勻。 於半導體晶圓W之溫度達到預加熱溫度T1且經過特定時間之時間點,閃光加熱部5之閃光燈FL對半導體晶圓W之表面進行閃光照射。此時,自閃光燈FL放射之閃光之一部分直接射向腔室6內,另一部分暫時由反射器52反射後再射向腔室6內,從而藉由該等閃光之照射進行半導體晶圓W之閃光加熱。 閃光加熱係藉由來自閃光燈FL之閃光(flash light)照射而進行,因此,能夠使半導體晶圓W之表面溫度於短時間內上升。即,自閃光燈FL照射之閃光係將預先儲存於電容器之靜電能量轉換為極短之光脈衝的照射時間為0.1毫秒以上且100毫秒以下左右之極短且強之閃光。並且,藉由來自閃光燈FL之閃光照射而被閃光加熱之半導體晶圓W之表面溫度瞬間地上升至1000℃以上之處理溫度T2而使注入至半導體晶圓W之雜質活化之後,表面溫度急速地下降。如此,於熱處理裝置1中,能夠使半導體晶圓W之表面溫度於極短時間內升降,故而能夠一面抑制注入至半導體晶圓W之雜質因熱而引起之擴散,一面進行雜質之活化。再者,雜質之活化所需之時間相較於其熱擴散所需之時間極短,即便於0.1毫秒至100毫秒左右之不會產生擴散之短時間內,亦完成活化。 於本實施形態中,以接近保持於承托器74之半導體晶圓W之周緣部之方式設置光吸收環20,而於預加熱時藉由光吸收環20補償自半導體晶圓W之周緣部釋放之熱,藉此,使預加熱階段中之半導體晶圓W之面內溫度分佈均勻。其結果為,亦能夠使閃光照射時之半導體晶圓W表面之面內溫度分佈均勻。 又,光吸收環20吸收紅外光,且使可見光透過。於自閃光燈FL出射之閃光之分光分佈中,主要為可見光區域中之強度較強,且波長短於鹵素燈HL。即,閃光燈FL主要出射可見光。因此,自閃光燈FL出射之閃光不被光吸收環20所吸收,而是透過光吸收環20。因此,能夠防止因來自閃光燈FL之閃光照射而導致光吸收環20受到熱損傷。再者,閃光加熱時之閃光照射時間極短,因此,即便光吸收環20使閃光透過,亦不會對半導體晶圓W之溫度分佈帶來影響。 於閃光加熱處理結束之後,經過特定時間後,鹵素燈HL熄滅。藉此,半導體晶圓W自預加熱溫度T1急速地降溫。降溫中之半導體晶圓W之溫度係由放射溫度計120測定,且其測定結果被傳送至控制部3。控制部3根據放射溫度計120之測定結果而監測半導體晶圓W之溫度是否降溫至特定溫度。然後,於半導體晶圓W之溫度降溫至特定程度以下後,移載機構10之一對移載臂11再次自退避位置水平移動至移載動作位置並上升,藉此,頂起銷12自承托器74之上表面突出,而自承托器74接收熱處理後之半導體晶圓W。繼而,使藉由閘閥185而封閉之搬送開口部66開放,藉由裝置外部之搬送機器人將載置於頂起銷12上之半導體晶圓W搬出,而完成熱處理裝置1中之半導體晶圓W之加熱處理。 於本實施形態中,以接近保持於承托器74之半導體晶圓W之周緣部之方式設置有光吸收環20。光吸收環20吸收紅外光,且使可見光透過。進行預加熱之鹵素燈HL主要出射紅外光,進行閃光加熱之閃光燈FL主要出射可見光。即,大致而言,光吸收環20吸收自鹵素燈HL出射之光,且使自閃光燈FL出射之閃光透過。 因此,於利用鹵素燈HL進行預加熱時,光吸收環20吸收自鹵素燈HL出射之光而升溫,補償自半導體晶圓W之周緣部釋放之熱,從而使半導體晶圓W之面內溫度分佈均勻。另一方面,由於在利用閃光燈FL進行閃光照射時,自閃光燈FL出射之閃光透過光吸收環20,故而能夠防止光吸收環20受到熱損傷。即,藉由將吸收紅外光且使可見光透過之光吸收環20接近保持於承托器74之半導體晶圓W之周緣部而設置,能夠於不產生因閃光照射而導致之損傷之情況下使半導體晶圓W之面內溫度分佈均勻。 又,於本實施形態中,藉由平面尺寸小於半導體晶圓W之承托器74保持半導體晶圓W。因此,於半導體晶圓W之周緣部附近不存在石英之承托器74。石英之承托器74亦使自鹵素燈HL出射之紅外光透過,故而於預加熱時亦幾乎不升溫,而成為自半導體晶圓W之周緣部散熱之原因。於本實施形態中,於半導體晶圓W之周緣部附近不存在石英之承托器74,因此,能夠抑制預加熱時自半導體晶圓W之周緣部之散熱,而使半導體晶圓W之面內溫度分佈更均勻。 以上,對本發明之實施形態進行了說明,但本發明能夠於不脫離其主旨之範圍內在上述內容以外進行各種變更。例如,於上述實施形態中,以與保持於承托器74之半導體晶圓W之下表面周緣部對向之方式配置光吸收環20,但並不限定於此,可以圍繞半導體晶圓W之端緣部之方式配置光吸收環20,亦可以與半導體晶圓W之上表面周緣部對向之方式配置光吸收環20。即便為此種配置,亦能夠在預加熱時藉由光吸收環20補償自半導體晶圓W之周緣部釋放之熱,而能夠使半導體晶圓W之面內溫度分佈均勻。簡而言之,只要以接近保持於承托器74之半導體晶圓W之周緣部之方式配置光吸收環20即可。但是,若以與半導體晶圓W之上表面周緣部對向之方式配置光吸收環20,則亦有光吸收環20成為閃光照射時之妨礙之虞,故而較佳為如上述實施形態般以與半導體晶圓W之下表面周緣部對向之方式設置光吸收環20。 又,於光吸收環20之素材含有對半導體製造製程不佳之成分之情形時,亦可藉由石英被覆光吸收環20。圖9係表示藉由石英被覆光吸收環20之例之圖。光吸收環20係利用與上述實施形態相同之素材而形成,其吸收紅外光且使可見光透過。該光吸收環20之整個表面被石英之被覆構件29所覆蓋。藉此,能夠防止光吸收環20所含有之對半導體製造製程不佳之成分附著於半導體晶圓W。 又,除放射溫度計120以外,亦可設置測定半導體晶圓W之不同位置之溫度的複數個放射溫度計。複數個放射溫度計測定例如半導體晶圓W之中央部、周緣部及其等之中間部之溫度。並且,亦可根據半導體晶圓W之周緣部之溫度降低之程度,而調整半導體晶圓W之下表面周緣部與光吸收環20之間隔d。於半導體晶圓W之周緣部之溫度降低之程度較大時,使光吸收環20上升而縮小間隔d,於該周緣部之溫度降低之程度較小時,使光吸收環20下降而增大間隔d。更具體而言,以半導體晶圓W之周緣部之溫度與中央部之溫度相等之方式,控制部3對升降驅動部25進行反饋控制,而調整間隔d。 又,於上述實施形態中,設為於閃光加熱部5具備30根閃光燈FL,但並不限定於此,可將閃光燈FL之根數設為任意之數量。又,閃光燈FL並不限定於氙閃光燈,亦可為氪閃光燈。又,鹵素加熱部4所具備之鹵素燈HL之根數亦不限定於40根,亦可設定為任意之數量。 又,於上述實施形態中,使用燈絲方式之鹵素燈HL作為連續發光1秒以上之連續點亮燈而進行半導體晶圓W之預加熱,但並不限定於此,亦可代替鹵素燈HL使用放電型之電弧燈作為連續點亮燈而進行預加熱。 又,根據本發明之熱處理裝置成為處理對象之基板並不限定於半導體晶圓,亦可為用於液晶顯示裝置等平板顯示器之玻璃基板或太陽電池用之基板。若處理對象之基板為矩形之玻璃基板,則光吸收環20之形狀亦成為四方環狀。又,本發明之技術亦可應用於高介電常數閘極絕緣膜(High-k膜)之熱處理、金屬與矽之接合、或多晶矽之結晶化。
1‧‧‧熱處理裝置
3‧‧‧控制部
4‧‧‧鹵素加熱部
5‧‧‧閃光加熱部
6‧‧‧腔室
7‧‧‧保持部
10‧‧‧移載機構
11‧‧‧移載臂
12‧‧‧頂起銷
13‧‧‧水平移動機構
14‧‧‧升降機構
20‧‧‧光吸收環
25‧‧‧升降驅動部
29‧‧‧被覆構件
41‧‧‧殼體
43‧‧‧反射器
51‧‧‧殼體
52‧‧‧反射器
53‧‧‧燈光放射窗
61‧‧‧腔室側部
63‧‧‧上側腔室窗
65‧‧‧熱處理空間
66‧‧‧搬送開口部
68‧‧‧反射環
69‧‧‧反射環
72‧‧‧支持部
74‧‧‧承托器
75‧‧‧保持板
77‧‧‧基板支持銷
78‧‧‧開口部
79‧‧‧貫通孔
81‧‧‧氣體供給孔
82‧‧‧緩衝空間
83‧‧‧氣體供給管
84‧‧‧閥
85‧‧‧閘閥
86‧‧‧氣體排氣孔
87‧‧‧緩衝空間
88‧‧‧氣體排氣管
89‧‧‧閥
120‧‧‧放射溫度計
185‧‧‧閘閥
190‧‧‧排氣部
191‧‧‧氣體排氣管
192‧‧‧閥
AR4‧‧‧箭頭
FL‧‧‧閃光燈
HL‧‧‧鹵素燈
W‧‧‧半導體晶圓
d‧‧‧間隔
圖1係表示本發明之熱處理裝置之構成之縱剖視圖。 圖2係保持部之俯視圖。 圖3係保持部之縱剖視圖。 圖4係將光吸收環之附近放大之圖。 圖5係移載機構之俯視圖。 圖6係移載機構之側視圖。 圖7係表示複數個鹵素燈之配置之俯視圖。 圖8係表示光吸收環之透過率之分光特性之圖。 圖9係表示藉由石英被覆光吸收環之例之圖。
Claims (5)
- 一種熱處理裝置,其特徵在於, 其係藉由向基板照射閃光而對該基板進行加熱者;且具備: 腔室,其收容基板; 石英之承托器,其於上述腔室內保持上述基板; 連續點亮燈,其設置於上述腔室之下方,且向保持於上述承托器之上述基板之下表面照射光; 閃光燈,其設置於上述腔室之上方,且向保持於上述承托器之上述基板之上表面照射閃光;及 紅外光吸收構件,其以接近保持於上述承托器之上述基板之周緣部之方式設置,吸收紅外光,且使可見光透過。
- 一種熱處理裝置,其特徵在於, 其係藉由向基板照射閃光而對該基板進行加熱者;且具備: 腔室,其收容基板; 石英之承托器,其於上述腔室內保持上述基板; 連續點亮燈,其設置於上述腔室之下方,且向保持於上述承托器之上述基板之下表面照射光; 閃光燈,其設置於上述腔室之上方,且向保持於上述承托器之上述基板之上表面照射閃光;及 紅外光吸收構件,其以接近保持於上述承托器之上述基板之周緣部之方式設置,紅外光之透過率為20%以下,且可見光之透過率為60%以上。
- 如請求項1或2之熱處理裝置,其 進而具備於上述腔室內使上述紅外光吸收構件上下移動之驅動機構。
- 如請求項1或2之熱處理裝置,其中 上述紅外光吸收構件被石英之被覆構件所覆蓋。
- 如請求項1或2之熱處理裝置,其中 上述承托器之平面尺寸小於上述基板之平面尺寸。
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US10475674B2 (en) * | 2015-03-25 | 2019-11-12 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus |
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2017
- 2017-03-08 JP JP2017043994A patent/JP6770915B2/ja active Active
- 2017-12-04 TW TW106142372A patent/TWI652739B/zh active
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TW201834071A (zh) | 2018-09-16 |
JP6770915B2 (ja) | 2020-10-21 |
JP2018148129A (ja) | 2018-09-20 |
US20180261479A1 (en) | 2018-09-13 |
KR20190080682A (ko) | 2019-07-08 |
KR102093007B1 (ko) | 2020-03-24 |
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