TWI650798B - 半導體元件結構及其形成方法 - Google Patents
半導體元件結構及其形成方法 Download PDFInfo
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- TWI650798B TWI650798B TW105135669A TW105135669A TWI650798B TW I650798 B TWI650798 B TW I650798B TW 105135669 A TW105135669 A TW 105135669A TW 105135669 A TW105135669 A TW 105135669A TW I650798 B TWI650798 B TW I650798B
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- Prior art keywords
- layer
- gate electrode
- metal
- electrode structure
- nitride
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- 238000000034 method Methods 0.000 title claims abstract description 113
- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 229910052751 metal Inorganic materials 0.000 claims abstract description 193
- 239000002184 metal Substances 0.000 claims abstract description 193
- 150000004767 nitrides Chemical class 0.000 claims abstract description 151
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims description 99
- 125000006850 spacer group Chemical group 0.000 claims description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000005121 nitriding Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 325
- 238000005530 etching Methods 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- -1 gold nitride Chemical class 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000951 Aluminide Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 1
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910000326 transition metal silicate Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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Abstract
本揭露提供了一種半導體元件結構及其形成方法。半導體元件結構包括半導體基底及位於半導體基底之上的金屬閘電極結構。半導體元件結構還包括位於半導體基底之上的絕緣層,其圍繞金屬閘電極結構。半導體元件結構更包括位於金屬閘電極結構的第一頂表面之上的第一金屬氮化物層,其與該金屬閘電極結構直接接觸。第一金屬氮化物層包括金屬閘電極結構之一氮化物材料。
Description
本揭露書係有關於半導體元件結構及其形成方法,且特別是有關於具有閘極堆疊之半導體元件結構。
半導體元件在例如是個人電腦、手機、數位相機、及其他電子裝置的各種電子裝置中使用。半導體元件通常通過以下步驟來製造:在半導體基底之上依次沉積絕緣或介電層、導電層及半導體材料層;然後使用微影技術來圖案化各種材料層以在半導體基底上形成電路構件及元件。
然而,儘管現有的半導體製造製程對於其預期目的一般都是夠用的,但是隨著元件繼續按比例縮小,它們不是在所有方面都完全令人滿意。
本揭露書之實施例提供一種半導體元件結構,包括:一半導體基底;一金屬閘電極結構,位於該半導體基底之上;一絕緣層,位於該半導體基底之上,且圍繞該金屬閘電極結構;以及一第一金屬氮化物層,位於該金屬閘電極結構的一第一頂表面之上,且與該金屬閘電極結構直接接觸,其中該第一金屬氮化物層包括該金屬閘電極結構之一氮化物材料。
本揭露書之實施例提供一種半導體元件結構,包
括:一半導體基底;一金屬閘電極結構,位於該半導體基底之上;一絕緣層,位於該半導體基底之上,且圍繞該金屬閘電極結構,其中該絕緣層露出了該金屬閘電極結構之一側壁的一第一部分;以及一金屬氮化物層,位於該金屬閘電極結構之一第一頂表面之上,且與該金屬閘電極結構直接接觸,其中該金屬氮化物層包括該金屬閘電極結構之一氮化物材料。
本揭露書之實施例提供一種半導體元件結構的形成方法,包括:於一半導體基底之上形成一金屬閘電極結構及一絕緣層,其中該絕緣層圍繞該金屬閘電極結構;以及氮化該金屬閘電極結構的一第一頂部部分以在該金屬閘電極結構之上形成一金屬氮化物層。
100‧‧‧半導體元件結構
101‧‧‧半導體基底
102‧‧‧隔離結構
104‧‧‧閘極介電層
106‧‧‧虛置閘極
108‧‧‧開口
110‧‧‧間隔物層
110N‧‧‧氮化物層
112‧‧‧摻雜區域
114‧‧‧應力源
116‧‧‧間隔物氧化層
118‧‧‧蝕刻停止層
118N‧‧‧氮化物層
120‧‧‧絕緣層
120N‧‧‧氮化物層
122‧‧‧功函數金屬層
122N‧‧‧金屬氮化物層
122s‧‧‧側壁
124‧‧‧閘電極層
124a‧‧‧閘電極結構
124b‧‧‧底表面
124N‧‧‧金屬氮化物層
124s‧‧‧側壁
130‧‧‧蝕刻停止層
132‧‧‧開口
132a‧‧‧側壁
132b‧‧‧底表面
134‧‧‧頂表面
140‧‧‧保護層
150‧‧‧介電間隔襯墊層
152‧‧‧頂表面
160‧‧‧金屬矽化物結構
170‧‧‧導電層
170a‧‧‧接觸結構
172‧‧‧頂表面
200、300、400‧‧‧半導體元件結構
G‧‧‧閘極堆疊
R‧‧‧凹槽
S1、S2、S3、S4、S5、S6、S7、S8、S9、S10‧‧‧頂表面
T1、T2、T3、T4、T5‧‧‧厚度
第1A-1K圖是根據一些實施例之半導體元件結構的數個階段的製程剖面圖。
第2A-2C圖是根據一些實施例之半導體元件結構的數個階段的製程剖面圖。
第3A-3B圖是根據一些實施例之半導體元件結構的數個階段的製程剖面圖。
第4A-4C圖是根據一些實施例之半導體元件結構的數個階段的製程剖面圖。
以下的揭露內容提供許多不同的實施例或範例,以實施本案的不同特徵。而本揭露書以下的揭露內容是敘述各
個構件及其排列方式的特定範例,以求簡化說明。當然,這些特定的範例並非用以限定。例如,若是本揭露書以下的內容敘述了將一第一特徵形成於一第二特徵之上或上方,即表示其包含了所形成的上述第一特徵與上述第二特徵是直接接觸的實施例,亦包含了尚可將附加的特徵形成於上述第一特徵與上述第二特徵之間,而使上述第一特徵與上述第二特徵可能未直接接觸的實施例。再者,在以下敘述提及在第二製程前進行第一製程,可包括第二製程於第一製程之後立刻進行之實施例,且亦可包括附加製程於第一製程與第二製程之間進行的實施例。另外,本揭露書中不同範例可能使用重複的參考符號及/或標記。這些重複係為了簡化與清晰的目的,並非用以限定各個實施例及/或所述外觀結構之間的關係。
再者,為了方便描述圖式中一元件或特徵部件與另一(複數)元件或(複數)特徵部件的關係,可使用空間相關用語,例如“在…之下”、“下方”、“較下部”、“上方”、“較上部”及類似的用語等。除了圖式所繪示的方位之外,空間相關用語用以涵蓋使用或操作中的裝置的不同方位。所述裝置也可被另外定位(例如,旋轉90度或者位於其他方位),並對應地解讀所使用的空間相關用語的描述。
本揭露書之一些實施例敘述如下。可於這些實施例中所述的步驟之前、期間、及/或之後進行其他附加的處理。所敘述之一些步驟可在不同的實施例中被置換或排除。可於半導體元件結構中增加附加的構件。以下所述之一些構件,可於不同的實施例中被置換或排除。雖然,所敘述之一些實施例係
具有特定的處理順序,然而這些處理亦可改以其他符合邏輯的順序進行。
本揭露書之一些實施例敘述如下。可於這些實施例中所述的步驟之前、期間、及/或之後進行其他附加的處理。所敘述之一些步驟可在不同的實施例中被置換或排除。可於半導體元件結構中增加附加的構件。以下所述之一些構件,可於不同的實施例中被置換或排除。雖然,所敘述之一些實施例係具有特定的處理順序,然而這些處理亦可改以其他符合邏輯的順序進行。
第1A-1K圖是根據一些實施例之半導體元件結構100的數個階段的製程剖面圖。如第1A圖所示,提供了半導體基底101。半導體基底101可為半導體晶圓(例如是矽晶圓)或半導體晶圓的一部分。
在一些實施例中,半導體基底101由包括單晶(single crystal)、多晶(polycrystal)、或非晶態(amorphous)結構的矽或鍺的元素半導體材料所製成。在其他一些實施例中,半導體基底101由例如是碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦、例如是SiGe或GaAsP的合金半導體、或前述之組合的化合物半導體所製成。半導體基底101還可包括多層半導體、絕緣體上覆半導體(semiconductor-on-insulator,SOI)(例如是絕緣體上覆矽或絕緣體上覆鍺)、或前述之組合。
根據一些實施例,在半導體基底101中形成隔離結構102以定義出半導體基底101上的數個主動區(active regions),並且使相鄰元件(例如電晶體)彼此電隔離。根據一些實施例,
隔離結構102包括介電材料,例如是氧化矽、氮化矽、氮氧化矽、氟摻雜矽酸鹽玻璃(FSG)、低k介電材料、其他合適的材料、或前述之組合。根據一些實施例,隔離結構102通過採用例如是半導體局部氧化(local oxidation of semiconductor,LOCOS)、淺溝槽隔離(STI)、或其他相似隔離技術而形成。
在一些實施例中,隔離結構102的形成包括:通過實施微影製程來圖案化半導體基底101;在半導體基底101中蝕刻出溝槽;以及用介電材料填充溝槽。在一些實施例中,經過填充的溝槽具有多層結構,例如是熱氧化襯墊層填充有氮化矽或氧化矽。
根據一些實施例,如第1A圖所示,在半導體基底101之上形成閘極介電層104及虛置閘極(dummy gate)106以定義出半導體基底101中的主動區。在一些實施例中,閘極介電層104包括高介電常數材料(high-k材料)。根據一些實施例,高介電常數材料包括氧化鉿(HfO2)、氧化鉿矽(HfSiO)、氮氧化鉿矽(HfSiON)、氧化鉿鉭(HfTaO)、氧化鉿鈦(HfTiO)、氧化鉿鋯(HfZrO)、或前述之組合。
根據一些實施例,高介電常數材料包括金屬氧化物、金屬氮化物、金屬矽酸鹽、過渡金屬-氧化物、過渡金屬-氮化物、過渡金屬-矽酸鹽、金屬的氧氮化物、氧化鋁、氧化鉿-氧化鋁(HfO2-Al2O3)合金、其他合適的材料、或前述之組合。根據一些實施例,在閘極介電層104之上形成虛置閘極106。根據一些實施例,虛置閘極106由多晶矽或其他合適的材料所製成。
根據一些實施例,如第1A圖所示,在閘極106及閘極介電層104的側壁上形成間隔物層(spacer layer)110。根據一些實施例,間隔物層110包括例如是氮化矽、氮氧化矽、或前述之組合的介電材料。
根據一些實施例,如第1A圖所示,在半導體基底101中及虛置閘極106的相對兩側上形成摻雜區域(doped region)112。根據一些實施例,摻雜區域112係採用離子佈植製程而形成。根據一些實施例,摻雜區域112包括重摻雜源極區及重摻雜汲極區。根據一些實施例,在形成間隔物層110之後,形成摻雜區域112。
根據一些實施例,如第1A圖所示,在摻雜區域112中形成應力源(stressor)114。應力源114的形成包括用於移除部分半導體基底101的蝕刻製程及選擇性磊晶成長(selective epitaxial growth,SEG)製程。根據一些實施例,取決於所期望得到的金屬氧化物半導體(MOS)元件的類型,形成施加壓縮應力到通道區(channel region)的應力源(如SiGe應力源)或形成施加拉伸應力到通道區的應力源(如SiC應力源)。
根據一些實施例,如第1A圖所示,在間隔物層110及應力源114之上形成間隔物氧化層116。根據一些實施例,間隔物氧化層116的形成包括化學氣相沉積製程。間隔物氧化層116填充間隔物層110及應力源114之間的間隙以促進隨後形成的膜順利地覆蓋間隔物層110及應力源114。在一些其他實施例中,沒有形成間隔物氧化層116。
根據一些實施例,如第1A圖所示,在半導體基底
101及虛置閘極106之上形成接觸蝕刻停止層118。根據一些實施例,接觸蝕刻停止層118包括例如是氮化矽的介電材料。根據一些實施例,接觸蝕刻停止層118形成在間隔物層110、虛置閘極106、及半導體基底101之上。在其他一些實施例中,沒有形成接觸蝕刻停止層118。
根據一些實施例,如第1A圖所示,在虛置閘極106與半導體基底101之上沉積絕緣層120。根據一些實施例,絕緣層120包括絕緣材料。根據一些實施例,絕緣材料包括氧化矽、硼矽酸鹽玻璃(BSG)、磷矽酸鹽玻璃(PSG)、硼磷矽酸鹽玻璃(BPSG)、氟矽酸玻璃(FSG)、低介電常數(low-k)材料、多孔介電材料、或前述之組合。根據一些實施例,採用CVD製程、HDPCVD製程、旋塗製程、濺射製程、或前述之組合來形成絕緣層120。
之後,根據一些實施例,如第1B圖所示,對絕緣層120實施平坦化製程直到露出虛置閘極106的頂表面。根據一些實施例,平坦化製程包括化學機械研磨(chemical mechanical polishing,CMP)製程。根據一些實施例,在實施平坦化製程後,絕緣層120具有大抵平坦的表面以促進隨後的製程步驟。
根據一些實施例,然後,移除虛置閘極106。根據一些實施例,移除製程包括濕式蝕刻製程、乾式蝕刻製程、或前述之組合。根據一些實施例,在移除虛置閘極106後,於間隔物層110中形成出了開口108。根據一些實施例,開口108是一溝槽(trench)。
根據一些實施例,如第1C圖所示,在絕緣層120之
上及開口108中的閘極介電層104的之上沉積功函數金屬層122。根據一些實施例,功函數金屬層122為電晶體提供了期望的功函以增進元件性能(包括提高的開啟電壓)。
在形成NMOS電晶體的實施例中,功函數金屬層122可為能夠為元件提供合適的功函數值(例如是等於或小於約4.5eV)的n-型金屬。根據一些實施例,n-型金屬包括金屬、金屬碳化物、金屬氮化物、或前述之組合。例如,n-型金屬由鉭、氮化鉭、或前述之組合所製成。
另一方面,在形成PMOS電晶體的實施例中,功函數金屬層122可為能夠為元件提供合適的功函數值(例如是等於或大於約4.8eV)的p-型金屬。根據一些實施例,p-型金屬包括金屬、金屬碳化物、金屬氮化物、其他合適的材料、或前述之組合。例如,p-型金屬是由鈦、氮化鈦、其他合適的材料、或前述之組合所製成。
根據一些實施例,功函數金屬層122包括鉿、鋯、鈦、鉭、鋁、金屬碳化物、鋁化物、釕或前述之組合。根據一些實施例,金屬碳化物包括碳化鉿或碳化鋯。根據一些實施例,功函數金屬層122通過採用PVD製程、CVD製程、ALD製程、鍍製程(plating process)、其他合適的方法或前述之組合來沉積。
根據一些實施例,如第1C圖所示,在功函數金屬層122之上沉積閘電極層124以填充開口108。根據一些實施例,閘電極層124也被稱為金屬閘電極層。根據一些實施例,閘電極層124包括合適的金屬材料,例如是鋁、鎢、金、鉑、鈷、
其他合適的金屬、前述之合金、或前述之組合。根據一些實施例,閘電極層124通過採用PVD製程、CVD製程、鍍製程、其他相似製程、或前述之組合來沉積。
然後,根據一些實施例,如第1D圖所示,實施平坦化製程以移除開口108外的閘電極層124及功函數金屬層122。根據一些實施例,保留在開口108中的閘電極層124形成閘電極結構124a。
根據一些實施例,閘電極結構124a及功函數金屬層122一起形成閘極堆疊(gate stack)G。根據一些實施例,閘極堆疊G被也被稱為金屬閘極堆疊(metal gate stack)。根據一些實施例,閘極堆疊G由絕緣層120所圍繞。根據一些實施例,在平坦化製程後,閘極堆疊G之頂表面對齊於絕緣層120、接觸蝕刻停止層118、間隔物層110之頂表面。根據一些實施例,平坦化製程包括化學機械研磨(CMP)製程或其他相似製程。
根據一些實施例,如第1E圖所示,對絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘電極結構124a的各個頂部部分(top portions)均實施氮化(nitrification)製程。根據一些實施例,在氮化製程之後,在絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘電極結構124a的頂表面S1、S2、S3、S4、及S5上分別形成氮化物層120N、118N、及110N與金屬氮化物層122N及124N。
根據一些實施例,氮化物層120N、118N、及110N與金屬氮化物層122N及124N分別與絕緣層120、接觸蝕刻停止
層118、間隔物層110、功函數金屬層122、及閘電極結構124a直接接觸。根據一些實施例,氮化物層120N、118N、110N與金屬氮化物層122N及124N依次連接。根據一些實施例,功函數金屬層122覆蓋了閘電極結構124a的側壁124s及底表面124b。
根據一些實施例,金屬氮化物層122N及124N與氮化物層110N、118N、及120N分別是由功函數金屬層122、閘電極結構124a、間隔物層110、接觸蝕刻停止層118、及絕緣層120所形成。在一些實施例中,功函數金屬層122包括導電材料(例如,鉭),且金屬氮化物層122N包括該導電材料的氮化物材料(例如,氮化鉭)。
在一些實施例中,閘電極結構124a包括導電材料(例如,鋁、鎢、金、鉑、或鈷),而金屬氮化物層124N包括該導電材料的氮化物材料(例如,氮化鋁、氮化鎢、氮化金、氮化鉑、或氮化鈷)。在一些實施例中,間隔物層110包括介電材料,並且氮化物層110N包括間隔物層110的氮化物材料(即,氮化的該介電材料)。
在一些實施例中,接觸蝕刻停止層118包括介電材料,並且氮化物層118N包括接觸蝕刻停止層118的氮化物材料。在一些實施例中,絕緣層120包括介電材料(例如,氧化矽),並且氮化物層120N包括絕緣層120的氮化物材料(例如,氮氧化矽)。
根據一些實施例,氮化製程包括對絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘電
極結構124a的頂部部分實施氮電漿製程或氮離子佈植製程。根據一些實施例,在氮電漿製程中使用的功率在約20W至約400W的範圍之間。
根據一些實施例,氮化製程還包括在氮電漿製程或氮離子佈植製程之後,對絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘電極結構124a的頂部部分上實施熱製程。根據一些實施例,熱製程的製程溫度在約200℃至約600℃的範圍之間。
在一些實施例中,氮化物層120N的厚度T1、氮化物層118N的厚度T2、或氮化物層110N的厚度T3係不同於金屬氮化物層124N的厚度T4或金屬氮化物層122N的厚度T5。在一些實施例中,氮化物層120N的厚度T1、氮化物層118N的厚度T2、或氮化物層110N的厚度T3大於金屬氮化物層124N的厚度T4或金屬氮化物層122N的厚度T5。根據一些實施例,厚度T1、T2、或T3與厚度T4或T5之間的差異在約1埃至約99埃的範圍之間。
根據一些實施例,厚度T1、T2、T3、T4、或T5在約1埃至約100埃的範圍之間。根據一些實施例,通過調整氮電漿製程、氮離子佈植製程、及/或熱製程的製程參數可調整厚度T1、T2、T3、T4、及T5。
由於厚度T1、T2、或T3大於厚度或T4或T5,氮化物層120N、118N、及/或110N覆蓋閘電極結構124a及功函數金屬層122的側壁124s及122s。在一些實施例中,氮化層120N、118N、及110N與金屬氮化物層122N及124N的頂表面S6、S7、
S8、S9、S10係彼此對準。即,根據一些實施例,頂表面S6、S7、S8、S9、及S10大抵彼此共面。
根據一些實施例,如第1F圖所示,在氮化物層120N、118N、110N及金屬氮化物層122N及124N之上沉積蝕刻停止層130。在一些實施例中,蝕刻停止層130與氮化物層120N、118N及110N以及金屬氮化物層122N及124N直接接觸。根據一些實施例,蝕刻停止層130由氮化矽或其他合適的材料所製成。
根據一些實施例,由於氮化物層120N形成自絕緣層120,所以氮化物層120N與絕緣層120之間的附著力大於蝕刻停止層130與絕緣層120之間的附著力。根據一些實施例,由於氮化物層120N及蝕刻停止層130均包括氮,所以氮化物層120N與蝕刻停止層130之間的附著力大於絕緣層120與蝕刻停止層130之間的附著力。
相似地,根據一些實施例,氮化物層118N與接觸蝕刻停止層118之間的附著力大於接觸蝕刻停止層118與蝕刻停止層130之間的附著力。根據一些實施例,氮化物層118N與蝕刻停止層130之間的附著力大於接觸蝕刻停止層118與蝕刻停止層130之間的附著力。根據一些實施例,氮化物層110N與間隔物層110(或蝕刻停止層130)之間的附著力大於間隔物層110與蝕刻停止層130之間的附著力。
根據一些實施例,金屬氮化物層122N與功函數金屬層122(或蝕刻停止層130)之間的附著力大於功函數金屬層122與蝕刻停止層130之間的附著力。根據一些實施例,金屬氮化物層124N與閘電極結構124a(或蝕刻停止層130)之間的附
著力大於閘電極結構124a與蝕刻停止層130之間的附著力。
因此,根據一些實施例,氮化物層120N、118N、及110N與金屬氮化物層122N及124N避免了蝕刻停止層130與絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘電極結構124a彼此分層(delamination)。
參照第1F圖,根據一些實施例,在蝕刻停止層130之上形成保護層140。保護層140用以保護蝕刻停止層130在隨後的預-非晶化佈植(pre-amorphized implantation,PAI)製程中免受損壞。保護層140例如包括電漿增進氧化物(plasma-enhanced oxide,PEOX)層。
如第1G圖所示,根據一些實施例,圖案化保護層140、蝕刻停止層130、氮化物層120N、絕緣層120、及接觸蝕刻停止層118以形成露出相應應力源114的接觸開口132。根據一些實施例,使用微影製程及蝕刻製程進行圖案化。
根據一些實施例,氮化物層120N、118N、及110N與金屬氮化物層122N及124N避免了蝕刻停止層130與層120、118、110、122、閘電極結構124a彼此分層。因此,根據一些實施例,氮化物層120N、118N、及110N與金屬氮化物層122N及124N避免了蝕刻製程的蝕刻劑擴散至閘電極結構124a而造成損壞。
如第1H圖所示,根據一些實施例,在保護層140及接觸開口132的側壁132a及底表面132b上順應性地形成介電間隔襯墊(dielectric spacer liner,DSL)層150。DSL層150用於保護側壁132a在隨後的PAI製程中免受損壞。DSL層150由例如
SiOC或其他合適的材料所製成。DSL層150由例如原子層沉積製程或其他合適的製程所形成。在一些實施例中,DSL層150與氮化物層120N直接接觸。
如第1I圖所示,根據一些實施例,實施蝕刻製程以移除開口132的底表面132b之上的DSL層150,因而露出了應力源114的一部分。蝕刻製程例如包括氬電漿蝕刻製程。
隨後,根據一些實施例,實施清潔製程以清除底表面132b之上因DSL層150之蝕刻製程所形成的殘留物。根據一些實施例,清洗製程使用包含NH4OH、H2O2及H2O的清洗液。根據一些實施例,氮化物層120N、118N、110N及金屬氮化物層122N及124N避免了清洗液從側向擴散至閘電極結構124a及功函數金屬層122而損壞閘電極結構124a及功函數金屬層122。
根據一些實施例,實施預-非晶化佈植(PAI)的製程以減少摻質溝道效應(dopant channeling effect),並增進摻質的活化。在一些實施例中,使用矽、鍺、或碳。在其他一些實施例中,使用例如是氖、氬、氪、氙、及/或氡的惰性氣體。根據一些實施例,PAI製程避免了隨後摻雜的摻質穿隧過晶格結構內的空間而到達比預期還深的深度。根據一些實施例,由於PAI製程的作用,應力源114中由開口132所露出的部分被轉變為非晶態。
之後,根據一些實施例,在應力源114上/中實施矽化(salicidation)製程以形成金屬矽化物結構160。根據一些實施例,金屬矽化物結構160包括矽化鎳。在一些實施例中,金屬
矽化物結構160由合適的金屬材料的矽化物材料所製成。
根據一些實施例,合適的金屬材料包括鈷(Co)、鎳(Ni)、鉑(Pt)、鈦(Ti)、鐿(Yb)、鉬(Mo)、鉺(Er)、或前述之組合。根據一些實施例,矽化製程包括在應力源114及DSL層150之上沉積金屬膜(未顯示)以及實施退火製程以使金屬膜與應力源114發生反應。在一些實施例中,不實施矽化製程。
然後,採用例如蝕刻製程來移除金屬膜之未反應的部分。蝕刻製程包括濕式蝕刻製程、乾式蝕刻製程、或前述之組合。在一些實施例中,濕式蝕刻製程使用例如是熱磷酸的蝕刻劑來移除金屬膜之未反應的部分。根據一些實施例,氮化物層120N、118N及110N以及金屬氮化物層122N及124N避免了蝕刻劑擴散至閘電極結構124a及功函數金屬層122而造成損壞。
如第1J圖所示,在應力源114及DSL層150之上沉積導電層170,使之填充開口132,並電連接至金屬矽化物結構160。導電層170通過例如PVD製程或其他合適的製程形成。導電層170由例如鎢或其他合適的導電材料所製成。
如第1K圖所示,根據一些實施例,實施化學機械研磨(CMP)製程以移除保護層140及開口132外部的導電層170及DSL層150。根據一些實施例,在CMP製程之後,保留在開口132中的導電層170形成了接觸結構(contact structures)170a。
根據一些實施例,接觸結構170a穿過蝕刻停止層
130、氮化物層120N、絕緣層120、及接觸蝕刻停止層118而電連接至金屬矽化物結構160及摻雜區域112(即,S/D區)。根據一些實施例,接觸結構170a也被稱為接觸插塞(contact plugs)。
根據一些實施例,在CMP製程之後,接觸結構170a、DSL層150、及蝕刻停止層130的頂表面172、152、及134彼此共面。如第1K圖所示,根據一些實施例,半導體元件結構100基本形成。根據一些實施例,半導體元件結構100是n型金屬氧化物半導體場效應電晶體(MOSFET)或p型MOSFET。根據一些實施例,在閘電極結構124a的相對兩側上形成摻雜區域112。
根據一些實施例,由於氮化物層120N、118N、及110N與金屬氮化物層122N及124N避免了蝕刻劑擴散至閘電極結構124a及功函數金屬層122而造成損壞,半導體元件結構100的產率得到了改善。
根據一些實施例,第2A圖至第2C圖是半導體元件結構200之數個階段的製程剖面圖。根據一些實施例,如第2A圖所示,在第1D圖的步驟後,移除絕緣層120、接觸蝕刻停止層118、及間隔物層110的頂部部分。根據一些實施例,在移除製程後,功函數金屬層122的側壁122s的一部分以及閘電極結構124a的側壁124s的一部分通過絕緣層120、接觸蝕刻停止層118、及間隔物層110而露出。
如第2B圖所示,根據一些實施例,對絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘
電極結構124a的頂部部分實施氮化製程。根據一些實施例,在氮化製程後,分別在功函數金屬層122、閘電極結構124a、間隔物層110、接觸蝕刻停止層118、及絕緣層120之上形成出了金屬氮化物層122N及124N與氮化物層110N、118N、及120N。
根據一些實施例,金屬氮化物層122N及124N以及氮化物層110N、118N、及120N分別形成自功函數金屬層122、閘電極結構124a、間隔物層110、接觸蝕刻停止層118及絕緣層120。
在第1F圖至第1K圖中所示的步驟之後,如第2C圖所示,根據一些實施例,半導體元件結構200基本形成。根據一些實施例,金屬氮化物層124N、金屬氮化物層122N的一部分、及閘電極結構124a的一部分嵌於蝕刻停止層130之中。根據一些實施例,金屬氮化物層122N覆蓋閘電極結構124a的側壁124s。
根據一些實施例,在形成接觸開口132、接觸結構170a、及DSL層150的過程中,氮化物層120N、118N、及110N與金屬氮化物層122N及124N避免蝕刻劑擴散至閘電極結構124a及功函數金屬層122而造成損壞。因此,根據一些實施例,提高了半導體元件結構200的產率。
根據一些實施例,第3A圖至第3B圖是半導體元件結構300之數個階段的製程剖面圖。根據一些實施例,在第1D圖的步驟之後,如第3A圖所示,對絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘電極結構124a的頂部部分實施氮化製程。
根據一些實施例,在氮化製程後,分別在功函數金屬層122、閘電極結構124a、間隔物層110、接觸蝕刻停止層118、及絕緣層120上形成金屬氮化物層122N及124N與氮化物層110N、118N、及120N。
根據一些實施例,金屬氮化物層122N及124N與氮化物層110N、118N及120N分別形成自功函數金屬層122、閘電極結構124a、間隔物層110、接觸蝕刻停止層118、及絕緣層120。
在一些實施例中,氮化物層120N的厚度T1、氮化物層118N的厚度T2、或氮化物層110N的厚度T3小於金屬氮化物層124N的厚度T4或金屬氮化物層122N的厚度T5。根據一些實施例,通過調整氮電漿製程、氮離子佈植製程、及/或熱製程的製程參數來調整厚度T1、T2、T3、T4、及T5。
在一些實施例中,氮化物層120N、118N、110N及金屬氮化物層122N及124N的頂表面S6、S7、S8、S9、及S10彼此對準。即,根據一些實施例,頂表面S6、S7、S8、S9、及S10大抵彼此共面。根據一些實施例,由於厚度T1、T2、或T3小於厚度T4或T5,金屬氮化物層122N及124N延伸進入由絕緣層120(或間隔物層110)及閘電極結構124a圍繞的凹槽R內。
在第1F圖至第1K圖中所示的步驟之後,如第3B圖所示,根據一些實施例,半導體元件結構300基本形成。在形成接觸開口132、接觸結構170a、及DSL層150期間,氮化物層120N、118N及110N與金屬氮化物層122N及124N避免蝕刻劑擴散至閘電極結構124a及功函數金屬層122而造成損壞。因此,
根據一些實施例,提高了半導體元件結構300的產率。
根據一些實施例,第4A圖至第4C圖是半導體元件結構400之數個階段的製程剖面圖。如第4A圖所示,在第1D圖的步驟之後,根據一些實施例,移除閘電極結構124a及功函數金屬層122的頂部部分。根據一些實施例,在移除製程之後,形成了由絕緣層120(或間隔物層110)及閘電極結構124a所圍繞的凹槽R。
如第4B圖所示,根據一些實施例,對絕緣層120、接觸蝕刻停止層118、間隔物層110、功函數金屬層122、及閘電極結構124a的頂部部分實施氮化製程。根據一些實施例,在氮化製程後,在功函數金屬層122、閘電極結構124a、間隔物層110、接觸蝕刻停止層118、及絕緣層120之上分別形成出了金屬氮化物層122N及124N與氮化物層110N、118N、及120N。
根據一些實施例,金屬氮化物層122N及124N以及氮化物層110N、118N、及120N分別形成自功函數金屬層122、閘電極結構124a、間隔物層110、接觸蝕刻停止層118、及絕緣層120。
在第1F圖至第1K圖中所示的步驟之後,如第4C圖所示,根據一些實施例,半導體元件結構400基本形成。在一些實施例中,蝕刻停止層130的一部分填充在凹槽R中。根據一些實施例,凹槽R的形成能夠增加來自用於形成接觸開口132及DSL層150之製程所用蝕刻劑的擴散路徑長度。因此,根據一些實施例,凹槽R的形成避免了蝕刻劑擴散至閘電極結構124a及功函數金屬層122而造成損壞。
根據一些實施例,在形成接觸開口132、接觸結構170a、及DSL層150期間,氮化物層120N、118N、及110N與金屬氮化物層122N及124N避免了蝕刻劑擴散至閘電極結構124a及功函數金屬層122而造成損壞。因此,根據一些實施例,提高了半導體元件結構400的產率。
根據一些實施例,提供了半導體元件的結構及形成同樣的半導體元件結構的方法。用於形成半導體元件結構之方法在金屬閘電極結構的頂表面之上形成了金屬氮化物層。金屬氮化物層避免了蝕刻劑(來自形成接觸開口的製程)擴散至金屬閘電極結構而造成損壞。因此,提高了半導體元件結構的產率。
根據一些實施例,提供了一種半導體元件結構。半導體元件結構包括半導體基底及位於半導體基底之上的金屬閘電極結構。半導體元件結構還包括位於半導體基底之上的絕緣層,其圍繞金屬閘電極結構。半導體元件結構更包括位於金屬閘電極結構的第一頂表面之上的第一金屬氮化物層,其與該金屬閘電極結構直接接觸。第一金屬氮化物層包括金屬閘電極結構之一氮化物材料。
根據一些實施例,提供了一種半導體元件結構。半導體元件結構包括半導體基底及位於半導體基底之上的金屬閘電極結構。半導體元件結構還包括位於半導體基底之上的絕緣層,其圍繞該金屬閘電極結構,且絕緣層露出了金屬閘電極結構之側壁的第一部分。半導體元件結構更包括位於金屬閘電極結構之第一頂表面之上的金屬氮化物層,其與金屬閘電極
結構直接接觸,且金屬氮化物層包括金屬閘電極結構之一氮化物材料。
根據一些實施例,提供了一種半導體元件結構的形成方法。方法包括於半導體基底之上形成金屬閘電極結構及絕緣層。絕緣層圍繞金屬閘電極結構。方法還包括氮化金屬閘電極結構的第一頂部部分以在金屬閘電極結構之上形成金屬氮化物層。
前述內文概述了許多實施例的特徵,以使本技術領域中具有通常知識者可從各個方面更佳地了解本揭露。本技術領域中具有通常知識者應可理解,且可輕易地以本揭露為基礎來設計或修飾其他製程及結構,並以此達到相同的目的及/或達到與在此介紹的實施例等相同之優點。本技術領域中具有通常知識者也應了解這些相等的結構並未背離本揭露的發明精神與範圍。在不背離本揭露的發明精神與範圍之前提下,可對本揭露進行各種改變、置換或修改。
雖然本揭露已以數個較佳實施例揭露如上,然其並非用以限定本揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神及範圍內,當可作任意之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。
Claims (11)
- 一種半導體元件結構,包括:一半導體基底;一金屬閘電極結構,位於該半導體基底之上;一絕緣層,位於該半導體基底之上,且圍繞該金屬閘電極結構;一第一金屬氮化物層,位於該金屬閘電極結構的一第一頂表面之上,且與該金屬閘電極結構直接接觸,其中該第一金屬氮化物層包括該金屬閘電極結構之一氮化物材料;以及一第一氮化物層,位於該絕緣層之上,其中該第一氮化物層包括該絕緣層之一氮化物材料,且該第一氮化物層之最底表面位於該絕緣層之頂表面上。
- 如申請專利範圍第1項所述之半導體元件結構,其中該第一金屬氮化物層的一第一厚度不同於該第一氮化物層的一第二厚度。
- 如申請專利範圍第1項所述之半導體元件結構,其中該第一金屬氮化物層之一第二頂表面對準於該第一氮化物層之一第三頂表面。
- 如申請專利範圍第1項所述之半導體元件結構,其中該半導體基底具有位於該金屬閘電極結構之相對兩側的一源極區及一汲極區,且該半導體元件結構更包括:一第一接觸結構,穿過該第一氮化物層及該絕緣層以電連接至該源極區;以及一第二接觸結構,穿過該第一氮化物層及該絕緣層以電連接至該汲極區。
- 如申請專利範圍第1、2、3、或4項所述之半導體元件結構,更包括:一功函數層,位於該金屬閘電極結構的側壁及一底表面之上;以及一第二金屬氮化物層,位於該功函數層之上,且連接至該第一金屬氮化物層,其中該第二金屬氮化物層包括該功函數層之一氮化物材料。
- 如申請專利範圍第1、2、3、或4項所述之半導體元件結構,更包括:一間隔物層,位於該金屬閘極電極結構的側壁之上;以及一第二氮化物層,其中該第二氮化物層包括該間隔物層之一氮化物材料,且其中該第二氮化物層之最底表面位於該間隔物層之頂表面上。
- 一種半導體元件結構,包括:一半導體基底;一金屬閘電極結構,位於該半導體基底之上;一絕緣層,位於該半導體基底之上,且圍繞該金屬閘電極結構,其中該絕緣層露出了該金屬閘電極結構之一側壁的一第一部分;一金屬氮化物層,位於該金屬閘電極結構之一第一頂表面之上,且與該金屬閘電極結構直接接觸,其中該金屬氮化物層包括該金屬閘電極結構之一氮化物材料;以及一第一氮化物層,位於該絕緣層之上,其中該第一氮化物層包括該絕緣層之一氮化物材料,且該第一氮化物層之最底表面位於該絕緣層之頂表面上。
- 如申請專利範圍第7項所述之半導體元件結構,更包括:一間隔物層,位於該金屬閘極電極結構的側壁之上;以及一第二氮化物層,其中該第二氮化物層包括該間隔物層之一氮化物材料,且其中該第二氮化物層之最底表面位於該間隔物層之頂表面上。
- 一種半導體元件結構的形成方法,包括:於一半導體基底之上形成一金屬閘電極結構及一絕緣層,其中該絕緣層圍繞該金屬閘電極結構;以及氮化該金屬閘電極結構的一第一頂部部分及該絕緣層之一第二頂部部份以分別在該金屬閘電極結構及該絕緣層之上形成一金屬氮化物層及一第一氮化物層。
- 如申請專利範圍第9項所述之半導體元件結構的形成方法,其中該第一頂部部分及該第二頂部部分的氮化包括:對該金屬閘電極結構的該第一頂部部分及該絕緣層之該第二頂部部分實施一氮電漿製程或一氮離子佈植製程。
- 如申請專利範圍第9項所述之半導體元件結構的形成方法,更包括:於該金屬閘極電極結構的側壁之上形成一間隔物層;以及在氮化該金屬閘電極結構的該第一頂部部分及該絕緣層之該第二頂部部分期間,氮化該間隔物層的一第三頂部部分以形成一第二氮化物層。
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US9911821B2 (en) | 2018-03-06 |
TW201729238A (zh) | 2017-08-16 |
US10868133B2 (en) | 2020-12-15 |
US20200058756A1 (en) | 2020-02-20 |
US20170141205A1 (en) | 2017-05-18 |
US20180197969A1 (en) | 2018-07-12 |
CN106711219B (zh) | 2020-01-14 |
US10461169B2 (en) | 2019-10-29 |
CN106711219A (zh) | 2017-05-24 |
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