TWI646166B - Wafer processing tape - Google Patents

Abstract

本發明提供一種晶圓加工用膠帶，其能夠降低標籤痕跡的產生，且能夠降低空氣(air)在接著劑層與粘合膜之間的捲入。其特徵在於，具有：長的脫模膜(11)；接著劑層(12)，其設置在脫模膜(11)的第1面上、且具有既定的平面形狀；粘合膜(13)，其具有標籤部(13a)和包圍標籤部(13a)的外側的周邊部(13b)，標籤部(13a)以覆蓋接著劑層(12)、且在接著劑層(12)的周圍與上述脫模膜(11)接觸的方式設置，並且具有既定的平面形狀；以及支承構件(14)，其設置在脫模膜(11)的與第1面相反的第2面上、且設置在脫模膜(11)的短邊方向的兩端部，支承構件(14)具有接著劑層(12)的厚度的1.0倍以上且4.0倍以下的厚度。 The present invention provides a tape for wafer processing which can reduce the occurrence of label marks and can reduce the entrapment of air between the adhesive layer and the adhesive film. It is characterized in that it has a long release film (11) and an adhesive layer (12) which is provided on the first surface of the release film (11) and has a predetermined planar shape; the adhesive film (13) And having a label portion (13a) and a peripheral portion (13b) surrounding the outer side of the label portion (13a), the label portion (13a) covering the adhesive layer (12) and surrounding the adhesive layer (12) and the above The release film (11) is provided in contact with each other and has a predetermined planar shape; and a support member (14) is provided on the second surface of the release film (11) opposite to the first surface, and is disposed on the release film (11) The support member (14) has a thickness of 1.0 times or more and 4.0 times or less of the thickness of the adhesive layer (12) at both end portions of the mold film (11) in the short-side direction.

Description

晶圓加工用膠帶 Wafer processing tape

本發明涉及晶圓加工用膠帶，特別是涉及具有晶粒切割膠帶和晶粒接合膜這2個功能的晶圓加工用膠帶。 The present invention relates to a tape for wafer processing, and more particularly to a tape for wafer processing having two functions of a die cutting tape and a die bonding film.

近來，開發了兼具晶粒切割膠帶和晶粒接合膜(也稱為晶圓貼裝膜)這2個功能的晶粒切割/晶粒接合帶，前述晶粒切割膠帶在將半導體晶圓切斷分離(晶粒切割)為各個晶片時用於將半導體晶片固定，前述晶粒接合膜用於將切斷後的半導體晶片與引線框架或封裝基板等粘接，或者在堆疊封裝中用於將半導體晶片之間層疊、粘接。 Recently, a die cutting/die bonding tape having a function of a die cutting tape and a die bonding film (also referred to as a wafer mounting film) which cut a semiconductor wafer is developed. The separation (die cutting) is used to fix a semiconductor wafer for each wafer, and the foregoing die bonding film is used for bonding the cut semiconductor wafer to a lead frame or a package substrate or the like, or used for stacking a semiconductor in a stacked package. The wafers are laminated and bonded.

作為這樣的晶粒切割/晶粒接合帶，考慮到與晶圓的粘貼、晶粒切割時向環形框架上的安裝等作業性，有的實施了預切割加工。 As such a die cutting/die bonding tape, pre-cut processing is performed in consideration of workability such as bonding to a wafer or mounting on a ring frame at the time of die cutting.

預切割加工後的晶粒切割/晶粒接合帶的例子示於圖4和圖5。圖4為示出將晶粒切割/晶粒接合帶卷取 為輥筒狀後的狀態的圖，圖5(a)為晶粒切割/晶粒接合帶的俯視圖，圖5(b)為圖5(a)的線B-B的剖視圖。晶粒切割/晶粒接合帶50包含脫模膜51、接著劑層52和粘合膜53。接著劑層52被加工為與晶圓的形狀對應的圓形，具有圓形標籤形狀。粘合膜53是與晶粒切割用的貼片環框的形狀對應的圓形部分的周邊區域被除去後的膜，如圖所示，具有圓形標籤部53a和包圍其外側的周邊部53b。接著劑層52與粘合膜53的圓形標籤部53a的中心對齊層疊，並且粘合膜53的圓形標籤部53a覆蓋接著劑層52，且在其周圍與脫模膜51接觸。 Examples of the die cutting/die bonding tape after the pre-cutting process are shown in FIGS. 4 and 5. Figure 4 is a view showing the winding of a die cutting/die bonding tape Fig. 5(a) is a plan view of the die cutting/die bonding tape, and Fig. 5(b) is a cross-sectional view taken along line B-B of Fig. 5(a). The die cutting/die bonding tape 50 includes a release film 51, an adhesive layer 52, and an adhesive film 53. The subsequent agent layer 52 is processed into a circular shape corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 53 is a film in which the peripheral portion of the circular portion corresponding to the shape of the patch ring frame for die cutting is removed, and has a circular label portion 53a and a peripheral portion 53b surrounding the outer side thereof as shown in the drawing. . The adhesive layer 52 is laminated in alignment with the center of the circular label portion 53a of the adhesive film 53, and the circular label portion 53a of the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around it.

在晶粒切割晶圓時，從層疊狀態的接著劑層52和粘合膜53剝離脫模膜51，如圖6所示，在接著劑層52上粘貼半導體晶圓W的背面，在粘合膜53的圓形標籤部53a的外周部粘合固定晶粒切割用貼片環框R。在該狀態下晶粒切割半導體晶圓W，之後，對粘合膜53實施紫外線照射等固化處理，拾取半導體晶片。此時，粘合膜53由於固化處理而粘合力下降，因此易於從接著劑層52剝離，半導體晶片以在背面附著有接著劑層52的狀態被拾取。在半導體晶片的背面附著的接著劑層52之後在將半導體晶片與引線框架、封裝基板或者其他半導體晶片粘接時，作為晶粒接合膜發揮作用。 When the wafer is diced, the release film 51 is peeled off from the adhesive layer 52 and the adhesive film 53 in a laminated state, and as shown in FIG. 6, the back surface of the semiconductor wafer W is pasted on the adhesive layer 52, and bonded. The outer peripheral portion of the circular label portion 53a of the film 53 is bonded and fixed to the die-cut patch ring frame R. In this state, the semiconductor wafer W is diced by the die, and thereafter, the adhesive film 53 is subjected to a curing treatment such as ultraviolet irradiation to pick up the semiconductor wafer. At this time, since the adhesive force of the adhesive film 53 is lowered by the curing treatment, it is easy to peel off from the adhesive layer 52, and the semiconductor wafer is picked up in a state in which the adhesive layer 52 is adhered to the back surface. When the semiconductor wafer is bonded to a lead frame, a package substrate, or another semiconductor wafer after the adhesive layer 52 adhered to the back surface of the semiconductor wafer, it functions as a die-bonding film.

另外，如上所述的晶粒切割/晶粒接合帶50中，接著劑層52與粘合膜53的圓形標籤部53a層疊而成的部分比粘合膜53的周邊部53b厚。因此，在作為產品 卷為輥筒狀時，接著劑層52和粘合膜53的圓形標籤部53a的層疊部分與粘合膜53的周邊部53a的高差相互重合，產生在柔軟的接著劑層52表面轉印高差的現象、即圖7所示的轉印痕跡(也稱為標籤痕跡、皺褶或卷印)。這樣的轉印痕跡的產生特別是在接著劑層52由柔軟的樹脂形成時或具有厚度時、以及晶粒切割/晶粒接合帶50的卷數多時較為顯著。而且，若產生轉印痕跡，則由於接著劑層與半導體晶圓的粘接不良，在晶圓的加工時有可能產生問題。 Further, in the die dicing/die bonding tape 50 as described above, the portion in which the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated is thicker than the peripheral portion 53b of the adhesive film 53. Therefore, as a product When the roll is in the form of a roll, the height difference between the laminated portion of the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 and the peripheral portion 53a of the adhesive film 53 coincides with each other, resulting in the surface of the soft adhesive layer 52. The phenomenon of the height difference, that is, the transfer mark (also referred to as label mark, wrinkle or roll) shown in FIG. Such a transfer mark is particularly remarkable when the adhesive layer 52 is formed of a soft resin or has a thickness, and when the number of turns of the die cutting/die bonding tape 50 is large. Further, if a transfer mark is generated, there is a possibility that a problem occurs in the processing of the wafer due to poor adhesion of the adhesive layer to the semiconductor wafer.

為瞭解決這樣的問題，開發了如下的晶圓加工用膠帶：在脫模膜的與設置有接著劑層和粘合膜的第1面相反的第2面上、且脫模膜的短邊方向的兩端部設置支承構件(例如參照專利文獻1)。這樣的晶圓加工用膠帶由於設置有支承構件，因此在將晶圓加工用膠帶卷取為輥筒狀時，能夠將施加於膠帶的卷取壓分散、或者使該壓力集中于支承構件，因此能夠抑制轉印跡在接著劑層上的形成。 In order to solve such a problem, a tape for wafer processing has been developed in which the release film has a second surface opposite to the first surface on which the adhesive layer and the adhesive film are provided, and the short side of the release film Support members are provided at both ends of the direction (see, for example, Patent Document 1). Since such a wafer processing tape is provided with a support member, when the wafer processing tape is wound into a roll shape, the winding pressure applied to the tape can be dispersed or the pressure can be concentrated on the support member. The formation of the transfer blot on the adhesive layer can be suppressed.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]日本專利第4360653號公報 [Patent Document 1] Japanese Patent No. 4360653

一般而言，粘合膜53覆蓋接著劑層52、且在其周圍與脫模膜51接觸，由於接著劑層52的厚度，有時在接著劑層52的周緣部在脫模膜51與粘合膜53之間產生極微的空隙，從而殘留空氣(air)。這樣的脫模膜51與粘合膜53之間的空氣也有時發生移動而向圓形標籤部53a的外側逃逸，此時不會對物性造成顯著影響。 In general, the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around it, and sometimes the release film 51 is adhered to the peripheral portion of the adhesive layer 52 due to the thickness of the adhesive layer 52. A slight gap is formed between the film 53 to leave air. The air between the release film 51 and the pressure-sensitive adhesive film 53 sometimes moves to the outside of the circular label portion 53a, and does not significantly affect the physical properties at this time.

但是，晶圓加工用膠帶在保存時和運送時被置於低溫狀態(例如-20℃~5℃)，有時被冷卻至-40℃以下。在這樣的低溫下，粘合膜的粘合力有時顯著下降而不表現出來。另一方面，被置於溫度變化大的特殊環境下，如在向半導體晶圓W貼合時被加熱，在加工半導體晶圓W時的使用時被置於常溫狀態等。由於這樣的低溫所致的粘合力的下降、或者溫度變化所引起的脫模膜、接著劑層和粘合膜的尺寸變化，有時在接著劑層與脫模膜之間、脫模膜與粘合膜之間以及接著劑層與粘合膜之間浸入空氣。進入到接著劑層與粘合膜之間的空氣導致對半導體晶圓W的貼合不良，有可能引起半導體晶圓W的晶粒切割程序、晶片的拾取程序、接合程序中的成品率的下降。 However, the tape for wafer processing is placed at a low temperature (for example, -20 ° C to 5 ° C) during storage and transportation, and may be cooled to -40 ° C or lower. At such low temperatures, the adhesive force of the adhesive film sometimes drops significantly without being exhibited. On the other hand, it is placed in a special environment with a large temperature change, such as when it is bonded to the semiconductor wafer W, and is placed in a normal temperature state during use when processing the semiconductor wafer W. The dimensional change of the release film, the adhesive layer, and the adhesive film due to the decrease in the adhesive force due to such a low temperature or the temperature change, sometimes between the adhesive layer and the release film, and the release film Air is immersed between the adhesive film and between the adhesive layer and the adhesive film. The air entering between the adhesive layer and the adhesive film causes poor bonding to the semiconductor wafer W, which may cause a wafer dicing process of the semiconductor wafer W, a wafer picking process, and a drop in yield in the bonding process. .

在像專利文獻1的晶圓加工用膠帶那樣設置支承構件時，已知，為了有效地防止轉印痕跡而增大支承構件的厚度時，若將晶圓加工用膠帶卷取為輥筒狀的狀態，則在與接著劑層對應的部分的上表面，晶圓加工用膠帶未被捲曲而成為中空狀態，若該中空部分增大，則易於將接著劑層周緣部的空氣引誘至接著劑層的內側。 When the support member is provided as in the wafer processing tape of Patent Document 1, it is known that when the thickness of the support member is increased to effectively prevent the transfer mark, the wafer processing tape is wound into a roll shape. In the state, the wafer processing tape is not curled and becomes hollow in the upper surface of the portion corresponding to the adhesive layer, and if the hollow portion is increased, the air at the peripheral portion of the adhesive layer is easily attracted to the adhesive layer. The inside.

因此，本發明的課題在於提供一種晶圓加工用膠帶，前述晶圓加工用膠帶能夠降低標籤痕跡的產生，且能夠降低接著劑層與粘合膜之間的空氣(air)的捲入。 Therefore, an object of the present invention is to provide a tape for wafer processing which can reduce the occurrence of label marks and can reduce the entrapment of air between the adhesive layer and the adhesive film.

為瞭解決以上的課題，本發明所涉及的晶圓加工用膠帶的特徵在於，具有：長的脫模膜；接著劑層，設置在上述脫模膜的第1面上、且具有既定的平面形狀；粘合膜，具有標籤部和包圍上述標籤部的外側的周邊部，上述標籤部以覆蓋上述接著劑層、且在上述接著劑層的周圍與上述脫模膜接觸的方式設置，並且具有既定的平面形狀；以及支承構件，設置在上述脫模膜的與設置有上述接著劑層和粘合膜的第1面相反的第2面上、且設置在上述脫模膜的短邊方向的兩端部，上述支承構件具有上述接著劑層的厚度的1.0倍以上且4.0倍以下的厚度。 In order to solve the above problems, the tape for wafer processing according to the present invention has a long release film, and an adhesive layer is provided on the first surface of the release film and has a predetermined plane. The adhesive film has a label portion and a peripheral portion surrounding the outer side of the label portion, and the label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined planar shape; and a support member provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and provided in the short side direction of the release film The support member has a thickness of 1.0 times or more and 4.0 times or less of the thickness of the adhesive layer at both end portions.

另外，上述半導體加工用膠帶優選：上述支承構件的線性膨脹係數為300ppm/℃以下。 Further, in the above-mentioned tape for semiconductor processing, it is preferable that the support member has a linear expansion coefficient of 300 ppm/° C. or less.

另外，上述半導體加工用膠帶優選：上述支承構件的線性膨脹係數與上述脫模膜的線性膨脹係數之差為250ppm/℃以下。 Further, in the above-mentioned tape for semiconductor processing, it is preferable that a difference between a linear expansion coefficient of the support member and a linear expansion coefficient of the release film is 250 ppm/° C. or less.

另外，上述半導體加工用膠帶的上述粘合膜優選：具有粘合劑層和基材膜，上述基材膜與上述支承構件之間的靜摩擦係數為0.2~2.0。 Further, it is preferable that the adhesive film of the semiconductor processing tape has a pressure-sensitive adhesive layer and a base film, and a static friction coefficient between the base film and the support member is 0.2 to 2.0.

另外，上述半導體加工用膠帶優選：支承構 件設置於上述脫模膜的上述第2面上的與在上述第1面設置的上述接著劑層的外側對應的區域。 Further, the above-mentioned tape for semiconductor processing preferably: support structure The member is provided in a region corresponding to the outer side of the adhesive layer provided on the first surface on the second surface of the release film.

另外，上述半導體加工用膠帶優選：上述支承構件支承構件沿上述脫模膜的長邊方向連續地設置。 Further, in the above-mentioned tape for semiconductor processing, it is preferable that the support member supporting member is continuously provided along the longitudinal direction of the release film.

另外，上述半導體加工用膠帶中，上述支承構件可以被著色。此時，支承構件優選根據晶圓加工用膠帶的種類被著色。另外，可以據晶圓加工用膠帶的厚度被著色。 Further, in the above-mentioned tape for semiconductor processing, the support member may be colored. At this time, it is preferable that the support member is colored according to the type of the tape for wafer processing. Further, it can be colored according to the thickness of the tape for wafer processing.

另外，上述半導體加工用膠帶優選：上述支承構件具有2層以上的層疊結構。 Further, in the above-mentioned tape for semiconductor processing, it is preferable that the support member has a laminated structure of two or more layers.

另外，上述半導體加工用膠帶優選：上述支承構件為在選自聚對苯二甲酸乙二醇酯、聚丙烯和高密度聚乙烯中的樹脂膜基材上塗布有粘接著劑的粘接著帶。 Further, in the above-mentioned tape for semiconductor processing, it is preferable that the support member is adhered with a bonding agent on a resin film substrate selected from the group consisting of polyethylene terephthalate, polypropylene, and high-density polyethylene. band.

另外，上述半導體加工用膠帶優選：23℃條件下的上述粘合膜的拉伸儲存彈性模量Eb與23℃條件下的上述脫模膜的拉伸儲存彈性模量Ea之比Eb/Ea為0.001~100。 Further, in the above-mentioned tape for semiconductor processing, the ratio Eb/Ea of the tensile storage elastic modulus Eb of the adhesive film at 23 ° C and the tensile storage elastic modulus Ea of the release film at 23 ° C is preferably 0.001~100.

另外，上述半導體加工用膠帶優選：上述脫模膜的厚度Ta與上述粘合膜的厚度Tb之比Ta/Tb為0.07~2.5。 Further, in the above-mentioned tape for semiconductor processing, the ratio Ta/Tb of the thickness Ta of the release film to the thickness Tb of the pressure-sensitive adhesive film is preferably 0.07 to 2.5.

另外，上述半導體加工用膠帶優選：在溫度23±2℃、剝離速度300mm/min的條件下的T型剝離試驗中，上述接著劑層與上述脫模膜之間的剝離力F1為0.025~0.075N/100mm，上述接著劑層與上述粘合膜之間的 剝離力F2為0.08~10N/100mm，F1<F2。 Further, in the above-described tape for semiconductor processing, it is preferable that the peeling force F1 between the adhesive layer and the release film is 0.025 to 0.075 in a T-peel test under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. N/100 mm, between the above adhesive layer and the above adhesive film The peeling force F2 is 0.08 to 10 N/100 mm, and F1 < F2.

根據本發明，能夠降低標籤痕跡的產生，且能夠降低接著劑層與粘合膜之間的空氣(air)的捲入。 According to the present invention, it is possible to reduce the occurrence of label marks and to reduce the entrapment of air between the adhesive layer and the adhesive film.

10‧‧‧晶圓加工用膠帶 10‧‧‧ Wafer processing tape

11‧‧‧脫模膜 11‧‧‧ release film

12‧‧‧接著劑層 12‧‧‧ adhesive layer

13‧‧‧粘合膜 13‧‧‧Adhesive film

13a‧‧‧圓形標籤部 13a‧‧‧Circular label

13b‧‧‧周邊部 13b‧‧‧ peripherals

14、14'、14"‧‧‧支承構件 14, 14', 14" ‧ ‧ support members

圖1(a)為本發明的實施方式所涉及的晶圓加工用膠帶的俯視圖，(b)為(a)的線A-A的剖視圖。 Fig. 1(a) is a plan view of a tape for wafer processing according to an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view taken along line A-A of (a).

圖2為本發明的另一實施方式所涉及的晶圓加工用膠帶的剖視圖。 2 is a cross-sectional view of a tape for wafer processing according to another embodiment of the present invention.

圖3為本發明的再另一實施方式所涉及的晶圓加工用膠帶的剖視圖。 3 is a cross-sectional view showing a tape for wafer processing according to still another embodiment of the present invention.

圖4為現有的晶圓加工用膠帶的立體圖。 4 is a perspective view of a conventional tape for wafer processing.

圖5(a)為現有的晶圓加工用膠帶的俯視圖，(b)為(a)的線B-B的剖視圖。 Fig. 5(a) is a plan view of a conventional wafer processing tape, and Fig. 5(b) is a cross-sectional view taken along line B-B of (a).

圖6為示出晶圓加工用膠帶與晶粒切割用貼片環框貼後的狀態的剖視圖。 6 is a cross-sectional view showing a state in which a wafer processing tape and a die cutting patch ring are attached to each other.

圖7為用於說明現有的晶圓加工用膠帶的問題的示意圖。 Fig. 7 is a schematic view for explaining a problem of a conventional tape for wafer processing.

以下基於附圖詳細地說明本發明的實施方 式。圖1(a)為本發明的實施方式所涉及的晶圓加工用膠帶(晶粒切割/晶粒接合帶)的俯視圖，圖1(b)為圖1(a)的線A-A的剖視圖。 The embodiments of the present invention will be described in detail below based on the drawings. formula. 1(a) is a plan view of a wafer processing tape (die dicing/die bonding tape) according to an embodiment of the present invention, and FIG. 1(b) is a cross-sectional view taken along line A-A of FIG. 1(a).

如圖1(a)和圖1(b)所示，晶圓加工用膠帶10具有長的脫模膜11、接著劑層12、粘合膜13和支承構件14。 As shown in FIGS. 1(a) and 1(b), the wafer processing tape 10 has a long release film 11, an adhesive layer 12, an adhesive film 13, and a support member 14.

接著劑層12設置在脫模膜的第1面上，具有與晶圓的形狀對應的圓形標籤形狀。粘合膜13具有圓形標籤部13a和包圍該圓形標籤部13a的外側的周邊部13b，前述圓形標籤部13a以覆蓋接著劑層12、且在接著劑層12的周圍與脫模膜接觸的方式設置。周邊部13b包括將圓形標籤部13a的外側完全包圍的形態、和如圖所示的不完全包圍的形態。圓形標籤部13a具有與晶粒切割用的貼片環框對應的形狀。而且，支承構件14設置在脫模膜11的與設置有接著劑12和粘合膜13的第1面11a相反的第2面11b上、且設置在脫模膜11的短邊方向的兩端部，具有接著劑層12的厚度的1.0倍以上且4.0倍以下的厚度。 The subsequent agent layer 12 is provided on the first surface of the release film, and has a circular label shape corresponding to the shape of the wafer. The adhesive film 13 has a circular label portion 13a and a peripheral portion 13b surrounding the outer side of the circular label portion 13a, the circular label portion 13a covering the adhesive layer 12 and the release film around the adhesive layer 12 The way the contact is set. The peripheral portion 13b includes a form in which the outer side of the circular label portion 13a is completely surrounded, and a form that is not completely surrounded as shown in the drawing. The circular label portion 13a has a shape corresponding to the patch ring frame for die cutting. Further, the support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is provided at both ends in the short-side direction of the release film 11. The portion has a thickness of 1.0 times or more and 4.0 times or less the thickness of the adhesive layer 12 .

以下對本實施方式的晶圓加工用膠帶10的各構成要素詳細地進行說明。 Hereinafter, each component of the wafer processing tape 10 of the present embodiment will be described in detail.

(脫模膜) (release film)

作為本發明的晶圓加工用膠帶10中使用的脫模膜11，可以使用聚酯(PET、PBT、PEN、PBN、PTT)系、 聚烯烴(PP、PE)系、共聚物(EVA、EEA、EBA)系以及將這些材料部分取代而進一步提高了接著性、機械強度的膜。另外，也可以為這些膜的層疊體。 As the release film 11 used in the wafer processing tape 10 of the present invention, polyester (PET, PBT, PEN, PBN, PTT) systems can be used. A polyolefin (PP, PE)-based, copolymer (EVA, EEA, EBA) system and a film in which these materials are partially substituted to further improve the adhesion and mechanical strength. Further, it may be a laminate of these films.

脫模膜的厚度沒有特別限制，可以適宜地設定，優選25~50μm。 The thickness of the release film is not particularly limited and can be appropriately set, and is preferably 25 to 50 μm.

(接著劑層) (adhesive layer)

本發明的接著劑層12如上所述形成在脫模膜11的第1面11a上，具有與晶圓的形狀對應的圓形標籤形狀。 The adhesive layer 12 of the present invention is formed on the first surface 11a of the release film 11 as described above, and has a circular label shape corresponding to the shape of the wafer.

接著劑層12在貼合併晶粒切割半導體晶圓等後、在拾取晶片時，附著在晶片背面，作為將晶片固定於基板、引線框架時的接著劑使用。作為接著劑層12，可以優選使用含有選自環氧系樹脂、丙烯酸系樹脂、酚系樹脂中的至少1種的粘接著劑等。另外，也可以使用聚醯亞胺系樹脂、矽酮系樹脂。其厚度可以適宜設定，但優選5~100μm左右。 The adhesive layer 12 adheres to the back surface of the wafer after the wafer is picked up by the die-cut semiconductor wafer or the like, and is used as an adhesive when the wafer is fixed to the substrate or the lead frame. As the adhesive layer 12, an adhesive agent containing at least one selected from the group consisting of an epoxy resin, an acrylic resin, and a phenol resin can be preferably used. Further, a polyimide-based resin or an anthrone-based resin may also be used. The thickness can be appropriately set, but it is preferably about 5 to 100 μm.

(粘合膜) (adhesive film)

本發明的粘合膜13如上所述具有與晶粒切割用的貼片環框的形狀對應的圓形標籤部13a、和包圍其外側的周邊部13b。這樣的粘合膜可以通過預切割加工從膜狀粘合劑除去圓形標籤部13a的周邊區域來形成。 As described above, the adhesive film 13 of the present invention has a circular label portion 13a corresponding to the shape of the patch ring frame for die cutting, and a peripheral portion 13b surrounding the outer side thereof. Such an adhesive film can be formed by removing a peripheral region of the circular label portion 13a from the film adhesive by a pre-cut process.

作為粘合膜13，沒有特別限制，只要在晶粒切割晶圓時具有充分的粘合力而不使晶圓剝離，在晶粒切 割後拾取晶片時，顯示出低粘合力以使能夠容易地從接著劑層剝離，就可以適當地使用例如在基材膜上設置有粘合劑層的膜。 The adhesive film 13 is not particularly limited as long as it has sufficient adhesion when the wafer is diced by the wafer without peeling off the wafer, and is cut in the crystal grain. When the wafer is picked up after cutting, it exhibits a low adhesive force so that it can be easily peeled off from the adhesive layer, and for example, a film provided with an adhesive layer on the base film can be suitably used.

作為粘合膜13的基材膜，只要是以往公知的膜，就可以沒有特別限制地使用，但使用輻射線固化性的材料作為後述的粘合劑層時，優選使用具有輻射線透射性的膜。 The base film of the pressure-sensitive adhesive film 13 is not particularly limited as long as it is a conventionally known film. However, when a radiation curable material is used as the pressure-sensitive adhesive layer to be described later, it is preferable to use radiation-transmitting. membrane.

例如，作為其材料，可以列舉：聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸類共聚物、離聚物等α-烯烴的均聚物或共聚物、或者它們的混合物、聚氨酯、苯乙烯-乙烯-丁烯或戊烯系共聚物、聚醯胺-多價醇共聚物等熱塑性彈性體、以及它們的混合物。另外，基材膜可以為選自這些中的2種以上材料混合而成的膜，也可以為它們單層或多層化而成的膜。 For example, as a material thereof, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-acrylic acid B can be cited. a homopolymer or copolymer of an α-olefin such as an ester copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic copolymer, an ionomer, or a mixture thereof, a polyurethane, a styrene-ethylene-butene or a pentane A thermoplastic elastomer such as an olefin copolymer or a polyamine-polyol copolymer, and a mixture thereof. Further, the base film may be a film obtained by mixing two or more kinds of materials selected from these, or a film obtained by laminating one or more layers.

基材膜的厚度沒有特別限制，可以適宜地設定，但優選50~200μm。 The thickness of the base film is not particularly limited and may be appropriately set, but is preferably 50 to 200 μm.

作為粘合膜13的粘合劑層中使用的樹脂，沒有特別限制，可以使用粘合劑中使用的公知的氯代聚丙烯樹脂、丙烯酸類樹脂、聚酯樹脂、聚氨酯樹脂、環氧樹脂等。 The resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 13 is not particularly limited, and a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin, or the like which is used for the pressure-sensitive adhesive can be used. .

優選在粘合劑層13的樹脂中適宜地配合丙烯酸系粘合劑、輻射線聚合性化合物、光聚合引發劑、固化劑等來 製備粘合劑。粘合劑層13的厚度可以沒有特別限制適宜地設定，但優選5~30μm。 Preferably, an acrylic pressure-sensitive adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent, or the like is appropriately blended in the resin of the pressure-sensitive adhesive layer 13 Prepare the adhesive. The thickness of the pressure-sensitive adhesive layer 13 can be appropriately set without particular limitation, but is preferably 5 to 30 μm.

在粘合劑層中配合輻射線聚合性化合物後，通過輻射線固化，可以容易地從接著劑層進行剝離。該輻射線聚合性化合物，例如可以使用能夠通過光照射能發生三維網狀化的在分子內具有至少2個以上光聚合性碳-碳雙鍵的低分子量化合物。 After the radiation-polymerizable compound is blended in the pressure-sensitive adhesive layer, it can be easily peeled off from the adhesive layer by radiation curing. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule which can be three-dimensionally networked by light irradiation can be used.

具體地，能夠應用：三羥甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯(dipentaerythritol monohydroxy pentaacrylate)、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、寡丙烯酸酯(oligoester acrylate)等。 Specifically, it can be applied: trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butane Alcohol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like.

另外，除如上所述的丙烯酸酯系化合物外，也可以使用氨基甲酸酯丙烯酸酯系寡聚物。氨基甲酸酯丙烯酸酯系寡物可以通過使聚酯型或聚醚型等多價醇化合物與多價異氰酸酯化合物(例如，2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-亞二甲苯基二異氰酸酯、1,4-亞二甲苯基二異氰酸酯、二苯基甲烷4,4-二異氰酸酯等)反應來得到末端異氰酸酯氨基甲酸酯預聚物，再使該末端異氰酸酯氨基甲酸酯預聚物與具有羥基的丙烯酸酯或者甲基丙烯酸酯(例如，丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、甲基丙烯酸2-羥基丙酯、聚乙二醇丙烯酸酯、聚乙二醇甲基丙烯酸酯等)反應來得 到。 Further, in addition to the acrylate-based compound as described above, a urethane acrylate-based oligomer may also be used. The urethane acrylate-based oligo may be a polyvalent alcohol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1, Reaction of 3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. to obtain a terminal isocyanate urethane prepolymer, and then the terminal isocyanate A urethane prepolymer and an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxy methacrylate) Reaction of propyl ester, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc. To.

粘合劑層中可以混合有選自上述的樹脂中的2種以上。 Two or more types selected from the above resins may be mixed in the pressure-sensitive adhesive layer.

使用光聚合引發劑時，例如可以使用：異丙基苯偶姻醚、異丁基苯偶姻醚、二苯甲酮、米蚩酮、氯噻噸酮、十二烷基噻噸酮(dodecyl thioxanthone)、二甲基噻噸酮(dimethyl thioxanthone)、二乙基噻噸酮(diethyl thioxanthone)、苄基二甲基縮酮(benzyldimethylketal)、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等。這些光聚合引發劑的配合量相對於丙烯酸系共聚物100質量份優選0.01~5質量份。 When a photopolymerization initiator is used, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone (dodecyl) may be used. Thioxanthone), dimethyl thioxanthone, diethyl thioxanthone, benzyldimethylketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl Phenylpropane and the like. The amount of the photopolymerization initiator to be added is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.

(支承構件) (support member)

支承構件14設置在脫模膜11的與設置有接著劑12和粘合膜13的第1面11a相反的第2面11b、且設置在脫模膜11的短邊方向的兩端部，具有接著劑層12的厚度的1.0倍以上且4.0倍以下的厚度。通過這樣設置支承構件14，在將晶圓加工用膠帶10卷取為輥筒狀時，能夠使施加於膠帶的卷取壓分散、或者集中于支承構件14，因此能夠抑制轉印跡在接著劑層12上的形成。 The support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is provided at both end portions of the release film 11 in the short-side direction. The thickness of the layer 12 is then 1.0 times or more and 4.0 times or less. By providing the support member 14 in this manner, when the wafer processing tape 10 is wound into a roll shape, the winding pressure applied to the tape can be dispersed or concentrated on the support member 14, so that the transfer mark can be suppressed in the adhesive layer. The formation on the 12th.

另外，在設置有接著劑層12和粘合膜13的第1面11a形成支承構件的情況下，支承層的寬度優選設為不接觸到圓形標籤部13a的範圍內，有時存在限制，與此相對，本實施方式的構成中，能夠較寬地確保支承構件 14的寬度，能夠更有效地抑制轉印痕跡的產生。 Further, when the support member is formed on the first surface 11a on which the adhesive layer 12 and the adhesive film 13 are provided, the width of the support layer is preferably set so as not to come into contact with the circular label portion 13a, and there may be a limitation. On the other hand, in the configuration of the present embodiment, the support member can be secured widely The width of 14 can suppress the generation of transfer marks more effectively.

另外，在設置有接著劑12和粘合膜13的第1面11a形成支承構件的情況下，對支承層的寬度存在限制，與此相對，本實施方式的構成中，能夠較寬地確保支承構件14的寬度，能夠更有效地抑制轉印痕跡的產生。 Further, when the support member is formed on the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, the width of the support layer is limited, whereas the configuration of the present embodiment can securely support the support. The width of the member 14 can more effectively suppress the generation of transfer marks.

另外，通過在脫模膜11的第2面11b設置支承構件14，由此可得到使對支承構件14的位置偏移的允許度增大的效果。 Further, by providing the support member 14 on the second surface 11b of the release film 11, an effect of increasing the allowable displacement of the position of the support member 14 can be obtained.

支承構件14優選設置在脫模膜11的第2面11b上的與設置在第1面的接著劑層12的外側對應的區域，即在第2面11b上如圖1(a)所示的從脫模膜11的端部至接著劑層12的區域r。利用這樣的結構，在卷取膠帶10時，接著劑層12與設置在脫模膜11的第2面11b的支承構件14不會重疊，因此不僅能夠抑制轉印痕跡的產生，而且也能夠防止支承構件14的痕跡附著於接著劑層12。 The support member 14 is preferably provided on the second surface 11b of the release film 11 in a region corresponding to the outer side of the adhesive layer 12 provided on the first surface, that is, on the second surface 11b as shown in Fig. 1(a). From the end of the release film 11 to the region r of the adhesive layer 12. With such a configuration, when the tape 10 is wound up, the adhesive layer 12 does not overlap with the support member 14 provided on the second surface 11b of the release film 11, so that it is possible to prevent not only the occurrence of transfer marks but also prevention. The trace of the support member 14 is attached to the adhesive layer 12.

支承構件14的厚度為接著劑層12的厚度的1.0倍以上且4.0倍以下。通過使支承構件14具有接著劑層的1.0倍以上的厚度，由此在卷取膠帶10時，粘合膜13與重疊在其表面的脫模膜11的第2面11b接觸、或者不接觸地在它們之間形成空間(中空部分)，因此脫模膜11的第2面11b不會經由粘合膜13而較強地按壓於柔軟的接著劑層12。因此，能夠有效地抑制轉印痕跡的產生。另一方面，通過使支承構件14具有接著劑層12的 4.0倍以下的厚度，由此通過控制上述空間的大小，使空間不變得過大，由此能夠防止變得容易導致空氣侵入到接著劑層12、粘合膜13、脫模膜11的各層間的狀態。特別是在支承構件14具有與接著劑層12同等的厚度時，晶圓加工用膠帶的輥筒的捲繞寬度納入與沒有支承構件14時相同的寬度，因此在保存程序中優異。圖2為示出比接著劑層12厚的支承構件14’的例子的剖視圖。 The thickness of the support member 14 is 1.0 times or more and 4.0 times or less the thickness of the adhesive layer 12. By making the support member 14 have a thickness of 1.0 times or more of the adhesive layer, the adhesive film 13 comes into contact with the second surface 11b of the release film 11 which is superposed on the surface thereof, or does not contact, when the tape 10 is taken up. Since a space (hollow portion) is formed between them, the second surface 11b of the release film 11 is strongly pressed against the soft adhesive layer 12 without passing through the adhesive film 13. Therefore, the generation of the transfer mark can be effectively suppressed. On the other hand, by having the support member 14 have the adhesive layer 12 By the thickness of 4.0 times or less, the space is not excessively controlled by controlling the size of the space described above, whereby it is possible to prevent air from intruding into the layers of the adhesive layer 12, the adhesive film 13, and the release film 11. status. In particular, when the support member 14 has the same thickness as the adhesive layer 12, the winding width of the roll for the wafer processing tape is the same as that of the case where the support member 14 is not provided, and therefore it is excellent in the storage procedure. Fig. 2 is a cross-sectional view showing an example of a support member 14' thicker than the adhesive layer 12.

支承構件14可以沿脫模膜11的長邊方向斷續或連續地設置，但從更有效地抑制轉印痕跡的產生的觀點出發，優選沿基材膜11的長邊方向連續地設置。 The support member 14 may be intermittently or continuously provided along the longitudinal direction of the release film 11, but from the viewpoint of more effectively suppressing the generation of transfer marks, it is preferably provided continuously along the longitudinal direction of the base film 11.

本發明的支承構件14優選具有300ppm/℃以下的線性膨脹係數。晶圓加工用膠帶被置於溫度變化大的環境下，例如晶圓加工用膠帶在保存時、運送時以-20℃~5℃左右保持低溫狀態，另外在將晶圓加工用膠帶的接著劑層與晶圓粘合時，為了使接著劑加熱軟化從而提高接著性，用熱板進行70~80℃左右的加熱貼合等。支承構件14的尺寸根據溫度變化而發生變化時，有可能在脫模膜11與粘合膜13之間、以及接著劑層12與粘合膜13之間浸入空氣而產生孔隙，產生對晶圓的貼合不良，從而導致之後的晶圓的晶粒切割程序、膠帶的擴張程序以及晶片的拾取程序、安裝程序中成品率的下降。本發明中，通過使用300ppm/℃以下的線性膨脹係數低的支承構件，能夠充分地抑制接著劑層12上的轉印痕跡的產生，同時即使在溫度變化大的使用環境下，支承構件13的尺寸變化也少， 能夠抑制孔隙的產生。 The support member 14 of the present invention preferably has a linear expansion coefficient of 300 ppm/° C. or less. The wafer processing tape is placed in an environment with a large temperature change. For example, the wafer processing tape is kept at a low temperature of -20 ° C to 5 ° C during storage, and is used as an adhesive for the wafer processing tape. When the layer is bonded to the wafer, in order to improve the adhesion by heating and softening the adhesive, heat bonding is performed at 70 to 80 ° C using a hot plate. When the size of the support member 14 changes according to a change in temperature, there is a possibility that air is immersed between the release film 11 and the adhesive film 13 and between the adhesive layer 12 and the adhesive film 13 to generate voids, and the wafer is generated. Poor fit, resulting in subsequent wafer die cutting procedures, tape expansion procedures, wafer pick-up procedures, and drop in yield in the installation process. In the present invention, by using a support member having a linear expansion coefficient of 300 ppm/° C. or less, the generation of transfer marks on the adhesive layer 12 can be sufficiently suppressed, and the support member 13 can be sufficiently used even in a use environment in which the temperature changes greatly. Less dimensional changes, It can suppress the generation of pores.

為了更有效地抑制轉印痕跡的產生和孔隙的產生，支承構件14的線性膨脹係數優選為150ppm/℃以下，更優選為70ppm/℃以下。線性膨脹係數的下限沒有特別限制，通常為0.1ppm/℃。 In order to more effectively suppress the generation of transfer marks and the generation of voids, the linear expansion coefficient of the support member 14 is preferably 150 ppm/° C. or less, more preferably 70 ppm/° C. or less. The lower limit of the linear expansion coefficient is not particularly limited and is usually 0.1 ppm/°C.

另外，支承構件14的線性膨脹係數與脫模膜11的線性膨脹係數之差優選為250ppm/℃以下。線性膨脹係數之差大於250ppm/℃時，由於保存時和運送時的低溫狀態和使用時的常溫狀態的溫度變化而產生支承構件14與脫模膜11的尺寸差，因此存在以下的各種問題。 Further, the difference between the linear expansion coefficient of the support member 14 and the linear expansion coefficient of the release film 11 is preferably 250 ppm/° C. or less. When the difference between the linear expansion coefficients is more than 250 ppm/° C., the dimensional difference between the support member 14 and the release film 11 occurs due to the temperature change during storage and the low temperature state during transportation and the normal temperature state during use, and thus various problems are as follows.

(1)由於溫度變化而產生尺寸差時，如上所述有可能在脫模膜11與粘合膜13之間、以及接著劑層12與粘合膜13之間產生孔隙。 (1) When a dimensional difference occurs due to a temperature change, as described above, voids may be generated between the release film 11 and the adhesive film 13, and between the adhesive layer 12 and the adhesive film 13.

(2)用戶以輥筒狀操作時，卷崩潰的可能性增加。更詳細地，例如即使在製造、出貨時正常地進行捲繞，用戶方面在從冷藏保存到常溫使用時、以及從常溫使用到冷藏保存時也產生尺寸差，卷崩潰的可能性增加。 (2) When the user operates in a roller shape, the possibility of a roll collapse increases. In more detail, for example, even if the winding is normally performed at the time of manufacture or shipment, the user has a dimensional difference in the case of storage from refrigerating to normal temperature use, and from normal temperature use to refrigerating storage, and the possibility of roll collapse increases.

(3)由於尺寸差而在捲繞為輥筒狀的片間產生間隙，異物自輥筒側面混入的可能性增加。 (3) A gap is formed between the sheets wound in a roll shape due to the difference in size, and the possibility that foreign matter is mixed in from the side surface of the roll increases.

(4)在晶圓加工用膠帶的卷數多時、製品寬度寬時，在從常溫開始進行冷藏保存時，輥筒芯側與輥筒外周側的冷卻速度不同。因此，在輥筒芯側與輥筒外周側，線膨脹差所致的支承構件14與脫模膜11的尺寸差不同，整個輥筒的形狀發生變化的可能性高。 (4) When the number of rolls of the wafer processing tape is large and the product width is wide, the cooling rate of the roll core side and the roll outer peripheral side is different when the storage is performed from the normal temperature. Therefore, the difference in size between the support member 14 and the release film 11 due to the difference in linear expansion between the core side of the roll and the outer peripheral side of the roll is high, and the shape of the entire roll is highly likely to change.

本發明中，線性膨脹係數是指在恒定壓力下改變溫度時物體的空間擴張所增加的比例。將溫度設為T、將該固體的長度設為L時，其線性膨脹係數α由以下的公式給出。 In the present invention, the coefficient of linear expansion refers to a ratio at which the spatial expansion of the object increases when the temperature is changed under a constant pressure. When the temperature is T and the length of the solid is L, the linear expansion coefficient α is given by the following formula.

另外，本發明中的線性膨脹係數的測定例如可以按照JIS K7197、塑膠的熱機械分析的線膨脹率試驗方法，使用熱機械分析裝置(TMA)，安裝切斷為長度15mm、寬度5mm、卡盤間距離10mm的試樣，在拉伸載荷10g、升溫速度5℃/min、N₂氣氣氛下、測定溫度範圍-20℃~50℃的條件下進行測定。 Further, the linear expansion coefficient in the present invention can be measured, for example, according to JIS K7197, a linear expansion rate test method for thermomechanical analysis of plastics, using a thermomechanical analysis device (TMA), and is cut into a length of 15 mm, a width of 5 mm, and a chuck. The sample having a distance of 10 mm was measured under the conditions of a tensile load of 10 g, a temperature increase rate of 5 ° C/min, a N ₂ gas atmosphere, and a measurement temperature range of -20 ° C to 50 ° C.

另外，從防止晶圓加工用膠帶10的捲繞偏移的觀點出發，支承構件14優選相對於粘合膜13具有某種程度的摩擦係數的材質。由此，可得到如下的效果：能夠防止晶圓加工用膠帶10的捲繞偏移，進行高速卷取，能夠增大卷取數。 Moreover, it is preferable that the support member 14 has a material having a certain coefficient of friction with respect to the adhesive film 13 from the viewpoint of preventing the winding offset of the wafer processing tape 10 . Thereby, it is possible to obtain an effect that the winding offset of the wafer processing tape 10 can be prevented, high-speed winding can be performed, and the number of windings can be increased.

支承構件14與粘合膜13的基材膜之間的靜摩擦係數優選為0.2~2.0，更優選為0.6~1.6。將晶圓加工用膠帶10卷取為輥筒狀時，在脫模膜11的第1面11a側設置的粘合膜13的周邊部13a與在脫模膜11的第2面11b側設置的支承構件14相接觸，因此，支承構件14與粘合膜13的基材膜之間的靜摩擦係數小於0.2時，在製造時、使用時變得容易產生捲繞偏移，從而操作性惡化。另一方面，大於2.0時，粘合膜13的基材膜與支承構件 14之間的阻力過大，製造程序中的操作性惡化，或者在高速卷取時等導致彎曲行進。因此，通過將兩者間的靜摩擦係數設定為上述範圍，由此可得到如下的效果：能夠防止晶圓加工用膠帶10的捲繞偏移，能夠進行高速卷取，能夠增大卷取數。 The coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is preferably 0.2 to 2.0, and more preferably 0.6 to 1.6. When the wafer processing tape 10 is wound into a roll shape, the peripheral portion 13a of the adhesive film 13 provided on the first surface 11a side of the release film 11 and the second surface 11b side of the release film 11 are provided. Since the support member 14 is in contact with each other, when the static friction coefficient between the support member 14 and the base film of the adhesive film 13 is less than 0.2, the winding deviation is likely to occur at the time of manufacture and use, and the workability is deteriorated. On the other hand, when it is more than 2.0, the base film and the supporting member of the adhesive film 13 The resistance between the 14 is too large, the operability in the manufacturing process is deteriorated, or the bending progress is caused at the time of high-speed winding. Therefore, by setting the static friction coefficient between the two to the above range, it is possible to obtain an effect that the winding of the wafer processing tape 10 can be prevented from being shifted, and high-speed winding can be performed, and the number of windings can be increased.

本發明中，支承構件14與粘合膜13的基材膜之間的靜摩擦係數可以基於JIS K7125，通過以下的測定方法得到。 In the present invention, the static friction coefficient between the support member 14 and the base film of the adhesive film 13 can be obtained by the following measurement method based on JIS K7125.

將分別切為25mm(寬度)×100mm(長度)的粘合膜13的基材膜與支承構件14的兩膜樣品重合，固定下側的膜。接著，在層疊而成的膜的上方載置重量200g的重物，作為載荷W，以200mm/min的速度拉伸上側的膜，測定滑出時的力Fd(g)，從以下的公式求出靜摩擦係數(μd)。 The base film of the adhesive film 13 cut into 25 mm (width) × 100 mm (length), respectively, was superposed on the two film samples of the support member 14, and the film on the lower side was fixed. Next, a weight of 200 g was placed on top of the laminated film, and the upper film was stretched at a speed of 200 mm/min as a load W, and the force Fd (g) at the time of slipping was measured, and the following formula was used. Static friction coefficient (μd).

μd=Fd/W Dd=Fd/W

作為支承構件14，例如可以適當地使用在樹脂膜基材塗布有粘接著劑的粘接著帶。通過將這樣的粘接著帶粘貼於脫模膜11的第2面11b的兩端部分的既定位置，由此能夠形成本實施方式的晶圓加工用膠帶10。 As the support member 14, for example, an adhesive tape to which a resin film substrate is coated with an adhesive can be suitably used. By attaching such an adhesive tape to a predetermined position of both end portions of the second surface 11b of the release film 11, the wafer processing tape 10 of the present embodiment can be formed.

作為粘接著帶的基材樹脂，只要滿足上述線性膨脹係數的範圍、且能夠耐受卷壓，則沒有特別限定，但從耐熱性、平滑性和入手容易度的觀點出發，優選選自聚對苯二甲酸乙二醇酯(PET)、聚丙烯和高密度聚乙烯。 The base resin to which the tape is bonded is not particularly limited as long as it satisfies the range of the linear expansion coefficient and can withstand the rolling, but is preferably selected from the viewpoints of heat resistance, smoothness, and ease of handling. Ethylene terephthalate (PET), polypropylene and high density polyethylene.

關於粘接著帶的粘合劑的組成和物性，沒有特別限定，只要在晶圓加工用膠帶10的卷取程序和保存程序中不從脫模膜11剝離即可。 The composition and physical properties of the adhesive to which the tape is bonded are not particularly limited, and may be removed from the release film 11 during the winding process and the storage procedure of the wafer processing tape 10 .

另外，作為支承構件14，可使用被著色的支承構件。通過使用這樣的著色支承構件，在將晶圓加工用膠帶卷取為輥筒狀時，能夠明確地識別膠帶的種類。例如，根據晶圓加工用膠帶的種類、厚度改變著色支承構件14的顏色，由此能夠容易地識別膠帶的種類、厚度，能夠抑制、防止產生人為的錯誤。 Further, as the support member 14, a colored support member can be used. By using such a colored support member, when the wafer processing tape is wound into a roll shape, the type of the tape can be clearly recognized. For example, the color of the coloring support member 14 can be changed according to the type and thickness of the tape for wafer processing, whereby the type and thickness of the tape can be easily recognized, and human error can be suppressed and prevented.

另外，關於晶圓加工用膠帶10，23℃條件下的粘合膜13的拉伸儲存彈性模量Eb與23℃條件下的脫模膜11的拉伸儲存彈性模量Ea之比優選在Eb/Ea0.001~100的範圍內。 Further, regarding the wafer processing tape 10, the ratio of the tensile storage elastic modulus Eb of the adhesive film 13 at 23 ° C to the tensile storage elastic modulus Ea of the release film 11 at 23 ° C is preferably at Eb. /Ea 0.001~100 range.

上述Eb/Ea的值越大，則相對地粘合膜13越硬、脫模膜11越柔軟。另一方面，上述Eb/Ea的值越小，則相對地粘合膜13越軟、脫模膜11越硬。根據上述構成，Eb/Ea為0.001以上，因此粘合膜的硬度(拉伸儲存彈性模量Eb)達到一定以上。因此，能夠抑制在構成晶圓加工用膠帶10的接著劑層12上產生轉印痕跡。另外，上述Eb/Ea為0.001以上，粘合膜13的硬度(拉伸儲存彈性模量Eb)達到一定以上，因此在貼合在半導體晶圓W上時，能夠適當地將粘合膜13與脫模膜11剝離(伸舌)。 The larger the value of Eb/Ea is, the harder the adhesive film 13 is and the softer the release film 11 is. On the other hand, the smaller the value of Eb/Ea is, the softer the adhesive film 13 is and the harder the release film 11 is. According to the above configuration, since Eb/Ea is 0.001 or more, the hardness (tensile storage elastic modulus Eb) of the adhesive film is at least a certain value. Therefore, it is possible to suppress occurrence of transfer marks on the adhesive layer 12 constituting the wafer processing tape 10. In addition, when the Eb/Ea is 0.001 or more and the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is at least a certain value, the adhesive film 13 can be appropriately bonded to the semiconductor wafer W. The release film 11 is peeled off (stretched tongue).

另外，上述Eb/Ea為100以下，因此脫模膜 11的硬度(拉伸儲存彈性模量Ea)達到一定以上，另一方面，粘合膜13的硬度(拉伸儲存彈性模量Eb)為一定以下。因此，在接著劑層12向脫模膜11貼合時，能夠抑制脫模膜11產生折斷，能夠防止劃傷接著劑層12的表面、或者氣泡混入膜間。結果，能夠抑制脫模膜11的膜翹起、在半導體晶圓W的安裝時在接著劑層12與半導體晶圓W之間產生孔隙。 In addition, the above Eb/Ea is 100 or less, so the release film The hardness (tensile storage elastic modulus Ea) of 11 is at least a certain value, and on the other hand, the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is not more than a certain value. Therefore, when the adhesive layer 12 is bonded to the release film 11, the release film 11 can be prevented from being broken, and the surface of the adhesive layer 12 or the bubbles can be prevented from being mixed between the films. As a result, it is possible to suppress the film lift of the release film 11 and to generate voids between the adhesive layer 12 and the semiconductor wafer W at the time of mounting the semiconductor wafer W.

可見，根據上述構成，在卷取為輥筒狀時能夠抑制在接著劑層12產生轉印痕跡。另外，能夠抑制脫模膜11的膜翹起、在半導體晶圓W的安裝時在接著劑層12與半導體晶圓W之間產生孔隙。 According to the above configuration, it is possible to suppress occurrence of a transfer mark on the adhesive layer 12 when the winding is performed in a roll shape. Further, it is possible to suppress the film lift of the release film 11 and to generate voids between the adhesive layer 12 and the semiconductor wafer W at the time of mounting the semiconductor wafer W.

上述構成中，脫模膜11的厚度優選為10~100μm，粘合膜13的厚度優選為25~180μm。 In the above configuration, the thickness of the release film 11 is preferably 10 to 100 μm, and the thickness of the adhesive film 13 is preferably 25 to 180 μm.

另外，上述構成中，23℃條件下的粘合膜13的拉伸儲存彈性模量Eb優選為1~500MPa，23℃條件下的脫模膜11的拉伸儲存彈性模量Ea優選為1~5000MPa。 Further, in the above configuration, the tensile storage elastic modulus Eb of the adhesive film 13 at 23 ° C is preferably 1 to 500 MPa, and the tensile storage elastic modulus Ea of the release film 11 at 23 ° C is preferably 1 to ≥ 5000MPa.

另外，上述構成中優選：接著劑層12的玻璃化轉變溫度在0~100℃的範圍內，且固化前23℃條件下的拉伸儲存彈性模量為50MPa~5000MPa的範圍。通過使接著劑層12的玻璃化轉變溫度為0℃以上，由此能夠抑制B階段狀態下的接著劑層12的粘性增大，能夠維持良好的操作性。另外，在晶粒切割時，能夠防止一部分接著劑層12發生熔融而使粘合劑附著於半導體晶片。結果，能夠維持半導體晶片的良好的拾取性。另一方面，通過使玻璃 化轉變溫度為100℃以下，由此能夠防止接著劑層12的流動性的下降。另外，也能夠維持與半導體晶圓W的良好的接著性。此外，接著劑層12為熱固化型時，接著劑層12的玻璃化轉變溫度是指熱固化前的玻璃化轉變溫度。另外，通過使接著劑層12的固化前23℃條件下的拉伸儲存彈性模量為50MPa以上，由此在晶粒切割時，能夠防止一部分接著劑層12發生熔融而使粘合劑附著於半導體晶片。另一方面，通過使拉伸儲存彈性模量為5000MPa以下，由此也能夠維持與半導體晶圓W、基板的良好的接著性。 Further, in the above configuration, it is preferable that the glass transition temperature of the adhesive layer 12 is in the range of 0 to 100 ° C, and the tensile storage elastic modulus at 23 ° C before curing is in the range of 50 MPa to 5000 MPa. By setting the glass transition temperature of the adhesive layer 12 to 0° C. or more, it is possible to suppress an increase in the viscosity of the adhesive layer 12 in the B-stage state, and it is possible to maintain good workability. Further, at the time of die cutting, it is possible to prevent a part of the adhesive layer 12 from being melted and to adhere the adhesive to the semiconductor wafer. As a result, good pickup of the semiconductor wafer can be maintained. On the other hand, by making the glass The transition temperature is 100 ° C or less, whereby the decrease in fluidity of the adhesive layer 12 can be prevented. In addition, good adhesion to the semiconductor wafer W can be maintained. Further, when the adhesive layer 12 is of a thermosetting type, the glass transition temperature of the adhesive layer 12 means a glass transition temperature before thermal curing. Further, by setting the tensile storage elastic modulus at 23 ° C before curing of the adhesive layer 12 to 50 MPa or more, it is possible to prevent a part of the adhesive layer 12 from being melted and to adhere the adhesive to the die during dicing. Semiconductor wafer. On the other hand, by setting the tensile storage elastic modulus to 5000 MPa or less, it is possible to maintain good adhesion to the semiconductor wafer W and the substrate.

另外，將脫模膜11的厚度設為Ta、將粘合膜13的厚度設為Tb時，晶圓加工用膠帶10的Ta/Tb優選在0.07~2.5的範圍內。 When the thickness of the release film 11 is Ta and the thickness of the adhesive film 13 is Tb, the Ta/Tb of the wafer processing tape 10 is preferably in the range of 0.07 to 2.5.

關於上述Ta/Tb，例如，使脫模膜11的厚度Ta一定時，其值越小，則粘合膜13越厚。根據上述構成，Ta/Tb為0.07以上，因此層疊有粘合膜13的部分與未層疊粘合膜13的部分的高差為一定以下。因此，能夠抑制轉印痕跡的產生。另外，上述Ta/Tb為0.07以上、粘合膜13的厚度厚於脫模膜11的厚度，因此通過脫模膜11的厚度能夠吸收應力，能夠抑制轉印痕跡的產生。另外，上述Ta/Tb為0.07以上、粘合膜13的厚度厚於脫模膜11的厚度，因此在貼合在半導體晶圓W上時，能夠適當地將粘合膜13與脫模膜11剝離(伸舌)。另外，關於上述Ta/Tb，例如使粘合膜13的厚度Tb一定時，其值越 小，則脫模膜11的厚度越薄。上述Ta/Tb為2.5以下，因此脫模膜11的厚度為一定以下。因此，對層疊有粘合膜13的部分與未層疊粘合膜13的部分的高差的追隨性良好。另外，上述Ta/Tb為2.5以下、脫模膜11的厚度為一定以下，因此能夠使將粘合膜13層壓於脫模膜時的壓力變得均勻，能夠防止氣泡的混入。可見，根據上述構成，將在粘合膜13上依次層疊接著劑層12和脫模膜11而成的晶圓加工用膠帶10卷取為輥筒狀時，能夠抑制在接著劑層12產生轉印痕跡。 In the above Ta/Tb, for example, when the thickness Ta of the release film 11 is constant, the smaller the value, the thicker the adhesive film 13. According to the above configuration, since Ta/Tb is 0.07 or more, the height difference between the portion where the adhesive film 13 is laminated and the portion where the adhesive film 13 is not laminated is not more than a certain value. Therefore, generation of transfer marks can be suppressed. In addition, since the Ta/Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than the thickness of the release film 11, the thickness of the release film 11 can absorb stress, and generation of transfer marks can be suppressed. In addition, since the Ta/Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than the thickness of the release film 11, when the semiconductor wafer W is bonded to the semiconductor wafer W, the adhesive film 13 and the release film 11 can be appropriately formed. Peel off (expose the tongue). Further, when the thickness Tb of the adhesive film 13 is constant, for example, when the Ta/Tb is constant, the value is higher. Small, the thinner the thickness of the release film 11 is. Since the Ta/Tb is 2.5 or less, the thickness of the release film 11 is not more than a certain value. Therefore, the followability of the height difference between the portion in which the adhesive film 13 is laminated and the portion in which the adhesive film 13 is not laminated is good. In addition, since the Ta/Tb is 2.5 or less and the thickness of the release film 11 is not more than a certain value, the pressure at the time of laminating the adhesive film 13 to the release film can be made uniform, and the incorporation of air bubbles can be prevented. In the above-described configuration, when the wafer processing tape 10 in which the adhesive layer 12 and the release film 11 are laminated in this order on the adhesive film 13 is wound into a roll shape, it is possible to suppress the occurrence of the transfer in the adhesive layer 12. Printed traces.

上述構成中，溫度23±2℃、剝離速度300mm/min的條件下的T型剝離試驗中，優選：接著劑層12與脫模膜11之間的剝離力F1在0.025~0.075N/100mm的範圍內，接著劑層12與粘合膜13之間的剝離力F2在0.08~10N/100mm的範圍內，上述F1和上述F2滿足F1<F2的關係。 In the above configuration, in the T-peel test under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min, it is preferable that the peeling force F1 between the adhesive layer 12 and the release film 11 is 0.025 to 0.075 N/100 mm. In the range, the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is in the range of 0.08 to 10 N/100 mm, and the above F1 and the above F2 satisfy the relationship of F1 < F2.

從防止產生鬆弛、卷取偏移、位置偏移、孔隙(氣泡)等的觀點出發，在對粘合膜13、接著劑層12、脫模膜11施加拉伸張力的同時來製造晶圓加工用膠帶10。結果，晶圓加工用膠帶10在構成其的任一膜中存在拉伸殘餘應變的狀態下被製造。該拉伸殘餘應變例如在-30~10℃的低溫狀態下運送或者長時間保存時，在各膜中引起收縮。另外，各膜的物性不同，因此收縮的程度也不同。例如，在各膜中，粘合膜13的收縮程度最大，脫模膜11的收縮程度最小。結果，在粘合膜13與接著劑層 12之間產生介面剝離，或者引起脫模膜11的膜翹起現象。 Wafer processing is performed while applying tensile tension to the adhesive film 13, the adhesive layer 12, and the release film 11 from the viewpoint of preventing slack, winding offset, positional deviation, pores (bubbles), and the like. Use tape 10. As a result, the wafer processing tape 10 is manufactured in a state in which tensile residual strain exists in any of the films constituting the wafer. This tensile residual strain causes shrinkage in each film, for example, when it is transported at a low temperature of -30 to 10 ° C or stored for a long period of time. Further, since the physical properties of the respective films are different, the degree of shrinkage also differs. For example, in each film, the degree of shrinkage of the adhesive film 13 is the largest, and the degree of shrinkage of the release film 11 is the smallest. As a result, in the adhesive film 13 and the adhesive layer Interfacial peeling occurs between 12 or causes film lift of the release film 11.

上述構成為在使接著劑層12與脫模膜11之間的剝離力F1為0.025~0.075N/100mm的範圍、且使接著劑層12與粘合膜13之間的剝離力F2為0.08~10N/100mm的範圍內的基礎上滿足F1<F2的關係的構成。如上所述，各膜中的收縮中，粘合膜最大，因此通過使接著劑層12與粘合膜13之間的剝離力F2大於接著劑層12與脫模膜11之間的剝離力F1，由此能夠抑制收縮率最大的粘合膜13的收縮，防止粘合膜13與接著劑層12之間的介面剝離、脫模膜11的膜翹起現象。另外，也能夠防止一部分或全部接著劑層12轉印至脫模膜11。 In the above configuration, the peeling force F1 between the adhesive layer 12 and the release film 11 is in the range of 0.025 to 0.075 N/100 mm, and the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is 0.08. A configuration in which the relationship of F1 < F2 is satisfied in the range of 10 N/100 mm. As described above, in the shrinkage in each film, the adhesive film is the largest, and therefore the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is made larger than the peeling force F1 between the adhesive layer 12 and the release film 11. Thereby, shrinkage of the adhesive film 13 having the largest shrinkage rate can be suppressed, and the interface peeling between the adhesive film 13 and the adhesive layer 12 and the film lift-up phenomenon of the release film 11 can be prevented. Further, it is also possible to prevent some or all of the adhesive layer 12 from being transferred to the release film 11.

〔實施例〕 [Examples]

接著，說明本發明的實施例，但本發明並不限於這些實施例。 Next, embodiments of the invention will be described, but the invention is not limited to the embodiments.

(1)脫模膜 (1) release film

準備以下所示的脫模膜。 Prepare the release film shown below.

脫模膜A1：厚度25μm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為4070MPa，線性膨脹係數為60ppm) Release film A1: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 25 μm (tensile storage elastic modulus: 4070 MPa, linear expansion coefficient: 60 ppm)

脫模膜A2：厚度100μm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為3910MPa，線性 膨脹係數為60ppm) Release film A2: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 100 μm (tensile storage elastic modulus is 3910 MPa, linear Expansion coefficient is 60ppm)

脫模膜A3：厚度12μm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為4020MPa，線性膨脹係數為60ppm) Release film A3: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 12 μm (tensile storage elastic modulus: 4020 MPa, linear expansion coefficient: 60 ppm)

脫模膜A4：厚度38μm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為4020MPa，線性膨脹係數為60ppm) Release film A4: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 38 μm (tensile storage elastic modulus: 4020 MPa, linear expansion coefficient: 60 ppm)

脫模膜A5：厚度25μm的矽酮脫模處理後的低密度聚乙烯(LDPE)膜(拉伸儲存彈性模量為105MPa，線性膨脹係數為230ppm) Release film A5: Low density polyethylene (LDPE) film after release treatment of anthrone with a thickness of 25 μm (tensile storage elastic modulus: 105 MPa, linear expansion coefficient: 230 ppm)

(2)粘合膜的製作 (2) Production of adhesive film

<粘合膜B1> <Adhesive film B1>

作為具有官能團的丙烯酸系共聚物，製備包含丙烯酸2-乙基己酯、丙烯酸2-羥基乙酯和甲基丙烯酸、丙烯酸2-乙基己酯的比率為60摩爾%、質均分子量70萬的共聚物。接著，添加甲基丙烯酸2-異氰酸根合乙酯使得碘值達到20，製備玻璃化轉變溫度-50℃、羥基值10mgKOH/g、酸值5mgKOH/g的丙烯酸系共聚物(b-1)。 As the acrylic copolymer having a functional group, a ratio of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and 2-ethylhexyl acrylate was 60 mol%, and the mass average molecular weight was 700,000. Copolymer. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer (b-1) having a glass transition temperature of -50 ° C, a hydroxyl value of 10 mgKOH/g, and an acid value of 5 mgKOH/g was prepared. .

相對於丙烯酸系共聚物(b-1)100質量份，加入作為聚異氰酸酯的Coronate L(日本聚氨酯制)5質量份，加入作為光聚合引發劑的Esacure KIP 150(Lamberti公司制)3質量份，將所得混合物溶解於乙酸乙酯，攪拌，製備粘合劑組合物。 5 parts by mass of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a polyisocyanate, and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) as a photopolymerization initiator were added to 100 parts by mass of the acrylic copolymer (b-1). The resulting mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition.

接著，在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷該粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-乙酸乙烯酯共聚物(東曹製，Ultrathene636)的基材膜(厚度50μm)貼合，製作厚度60μm的粘合膜B1。拉伸儲存彈性模量為40MPa。 Next, the pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, dried at 110 ° C for 3 minutes, and then contained. A base film (thickness: 50 μm) of an ethylene-vinyl acetate copolymer (U.S.A., Ultrathene 636) was bonded to each other to prepare an adhesive film B1 having a thickness of 60 μm. The tensile storage elastic modulus was 40 MPa.

<粘合膜B2> <Adhesive film B2>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為5μm，在110℃乾燥3分鐘後，與包含低密度聚乙烯(LDPE，未經脫模處理)的基材膜(厚度40μm)貼合，製作厚度45μm的粘合膜B2。拉伸儲存彈性模量為105MPa。 The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 5 μm, and after drying at 110 ° C for 3 minutes, and containing a low density A base film (thickness: 40 μm) of polyethylene (LDPE, which has not been subjected to mold release treatment) was bonded to each other to form an adhesive film B2 having a thickness of 45 μm. The tensile storage elastic modulus was 105 MPa.

<粘合膜B3> <Adhesive film B3>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-甲基丙烯酸類共聚物的離聚物(三井杜邦聚合化學製，HIMILAN1554)的基材膜(厚度150μm)貼合，製作厚度160μm的粘合膜B3。拉伸儲存彈性模量為301MPa。 The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 150 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was bonded to each other to prepare an adhesive film B3 having a thickness of 160 μm. The tensile storage elastic modulus was 301 MPa.

<粘合膜B4> <Adhesive film B4>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-甲基丙烯酸類共聚物的離聚物(三井杜邦聚合化學製，HIMILAN1554)的基材膜(厚度110μm)貼合，製作厚度120μm的粘合膜B4。拉伸儲存彈性模量為289MPa。 The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 110 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was bonded to each other to prepare an adhesive film B4 having a thickness of 120 μm. The tensile storage elastic modulus was 289 MPa.

<粘合膜B5> <Adhesive film B5>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-丙烯嵌段共聚物(Prime Polymer製，Prime Polypro F707W)的基材膜(厚度110μm)貼合，製作厚度120μm的粘合膜B5。拉伸儲存彈性模量為980MPa。 The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 110 μm) of a propylene block copolymer (Prime Polypro F707W, manufactured by Prime Polymer) was bonded to each other to prepare an adhesive film B5 having a thickness of 120 μm. The tensile storage elastic modulus was 980 MPa.

(3)接著劑層的形成 (3) Formation of an adhesive layer

<接著劑層C1> <Binder layer C1>

在包含環氧樹脂「YX4000」(三菱化學製，聯苯線性酚醛型環氧樹脂、環氧當量185)15.0質量份、酚醛樹脂「LF-6161」(DIC製，線性酚醛型酚醛樹脂、羥基當量118)40.0質量份、環氧樹脂「Epicoat 828」(三菱化學製，雙酚A型環氧樹脂、環氧當量190)45.0重量份、作為二氧化矽填料的「Aerosil R972」(日本Aerosil製，一次粒徑的平均粒徑0.016μm)5質量份的組合物中加入 MEK，攪拌混合，得到均勻的組合物。 15.0 parts by mass of epoxy resin "YX4000" (manufactured by Mitsubishi Chemical Corporation, biphenyl novolac type epoxy resin, epoxy equivalent 185) and phenolic resin "LF-6161" (DIC system, novolac type phenolic resin, hydroxyl equivalent) 118) 40.0 parts by mass of epoxy resin "Epicoat 828" (manufactured by Mitsubishi Chemical Corporation, bisphenol A type epoxy resin, epoxy equivalent 190) 45.0 parts by weight, "Aerosil R972" as a ceria filler (manufactured by Nippon Aerosil, The average particle diameter of the primary particle diameter is 0.016 μm) and 5 parts by mass of the composition is added. MEK, stirred and mixed to give a homogeneous composition.

向其中加入作為含有官能團的聚合物的含有來自丙烯酸縮水甘油基酯或甲基丙烯酸縮水甘油基酯的單體單元的丙烯酸類共聚物(重均分子量85萬，Tg20℃)66.7質量份、作為偶聯劑的「KBM-802」(信越矽利光製，巰基丙基三甲氧基矽烷)0.6質量份、以及作為固化促進劑的「Curezol 2PHZ-PW」(四國化成製，2-苯基-4,5-二羥基甲基咪唑，分解溫度230℃)0.1質量份，攪拌混合直至均勻。然後用100目篩檢程式過濾所得物，並進行真空脫泡，由此得到接著劑組合物的清漆(c-1)。 An acrylic copolymer (weight average molecular weight: 850,000, Tg 20 ° C) containing 6 to 100 parts of a monomer unit containing glycidyl acrylate or glycidyl methacrylate as a polymer containing a functional group was added thereto as an even "Kurezol 2PHZ-PW" (Curezol 2PHZ-PW), which is a curing accelerator, "KBM-802" (manufactured by Shin-Etsu Chemical Co., Ltd., decylpropyltrimethoxydecane), and 2-phenyl-4 , 5-dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.1 parts by mass, stirred and mixed until homogeneous. Then, the resultant was filtered with a 100-mesh screening procedure, and subjected to vacuum defoaming, whereby a varnish (c-1) of the adhesive composition was obtained.

用塗布器將該清漆(c-1)塗敷在脫模膜A1上，使得乾燥膜厚為30μm，在120℃乾燥5分鐘，製作厚度30μm的接著劑層C1。 This varnish (c-1) was applied onto the release film A1 by an applicator so that the dried film thickness was 30 μm, and dried at 120 ° C for 5 minutes to prepare an adhesive layer C1 having a thickness of 30 μm.

<接著劑層C2> <Binder layer C2>

用塗布器將清漆(c-1)塗敷在脫模膜A2上，使得乾燥膜厚為30μm，在120℃乾燥5分鐘，製作厚度30μm的接著劑層C2。 The varnish (c-1) was applied onto the release film A2 by an applicator so that the dried film thickness was 30 μm, and dried at 120 ° C for 5 minutes to prepare an adhesive layer C2 having a thickness of 30 μm.

<接著劑層C3> <Binder layer C3>

用塗布器將清漆(c-1)塗敷在脫模膜A1上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C3。之後，將接著劑層C3從脫模膜A1轉印至脫模膜A3。 The varnish (c-1) was applied onto the release film A1 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C3 having a thickness of 60 μm. Thereafter, the adhesive layer C3 is transferred from the release film A1 to the release film A3.

<接著劑層C4> <Binder layer C4>

用塗布器將清漆(c-1)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，準備2片這樣得到的膜，將它們在70℃進行層疊，由此製作厚度120μm的接著劑層C4，剝離一個脫模膜A4。 The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes, and two of the films thus obtained were prepared, and they were laminated at 70 ° C. This was made into an adhesive layer C4 having a thickness of 120 μm, and one release film A4 was peeled off.

<接著劑層C5> <Binder layer C5>

用塗布器將清漆(c-1)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C5。 The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C5 having a thickness of 60 μm.

<接著劑層C6> <Binder layer C6>

用塗布器將清漆(c-1)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C6。之後，將接著劑層C6從脫模膜A4轉印至脫模膜A5。 The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C6 having a thickness of 60 μm. Thereafter, the adhesive layer C6 is transferred from the release film A4 to the release film A5.

<接著劑層C7> <Binder layer C7>

用塗布器將清漆(c-1)塗敷在脫模基材A1上，使得乾燥膜厚為20μm，在120℃乾燥5分鐘，製作厚度20μm的接著劑層C7。 The varnish (c-1) was applied onto the release substrate A1 by an applicator so that the dried film thickness was 20 μm, and dried at 120 ° C for 5 minutes to prepare an adhesive layer C7 having a thickness of 20 μm.

<接著劑層C8> <Binder layer C8>

在包含環氧樹脂「1002」(三菱化學製，固形雙酚A型環氧樹脂、環氧當量600)40質量份、環氧樹脂「806」(三菱化學製，雙酚F型環氧樹脂、環氧當量160，比重1.20)100質量份、固化劑「Dyhard100SF」(DEGUSSA製，雙氰胺)5質量份、二氧化矽填料「SO-C2」(ADMAFINE製，平均粒徑0.5μm)200質量份、和作為二氧化矽填料的「Aerosil R972」(日本Aerosil製，一次粒徑的平均粒徑0.016μm)3質量份的組合物中加入MEK，攪拌混合，得到均勻的組合物。 40 parts by mass of epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600) and epoxy resin "806" (manufactured by Mitsubishi Chemical Corporation, bisphenol F epoxy resin, Epoxy equivalent of 160, specific gravity of 1.20), 100 parts by mass, curing agent "Dyhard 100SF" (manufactured by DEGUSSA, dicyandiamide), 5 parts by mass, cerium oxide filler "SO-C2" (manufactured by ADMAFINE, average particle diameter: 0.5 μm), 200 mass And MEK was added to the composition of 3 parts by mass of "Aerosil R972" (manufactured by Aerosil, Japan, average particle diameter of primary particle diameter: 0.016 μm) as a cerium oxide filler, and the mixture was stirred and mixed to obtain a uniform composition.

在其中加入苯氧基樹脂「PKHC」(INCHEM製，質均分子量43,000，玻璃化轉變溫度89℃)100質量份、作為偶聯劑的「KBM-802」(信越矽利光製，巰基丙基三甲氧基矽烷)0.6質量份、以及作為固化促進劑的「Curezol 2PHZ-PW」(四國化成製，2-苯基-4,5-二羥基甲基咪唑，分解溫度230℃)0.5質量份，攪拌混合直至均勻。然後用100目篩檢程式過濾所得物，並進行真空脫泡，由此得到接著劑組合物的清漆(c-2)。 100 parts by mass of a phenoxy resin "PKHC" (manufactured by INCHEM, a mass average molecular weight of 43,000, a glass transition temperature of 89 ° C), and "KBM-802" as a coupling agent (Shin-Etsu Philippine, thiopropyl propylene) 0.6 parts by mass of oxydecane, and "Curezol 2PHZ-PW" (manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature: 230 ° C) as a curing accelerator, 0.5 parts by mass, Stir and mix until uniform. Then, the resultant was filtered with a 100-mesh screening procedure, and subjected to vacuum defoaming, whereby a varnish (c-2) of the adhesive composition was obtained.

用塗布器將該清漆(c-2)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C8。 This varnish (c-2) was applied onto the release film A4 with an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C8 having a thickness of 60 μm.

(4)支承構件的製作 (4) Production of supporting members

<支承構件D1> <Support member D1>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離 襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為5μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的基材膜(厚度25μm)貼合，製作厚度30μm的支承構件D1。線性膨脹係數為60ppm。 Peeling of polyethylene terephthalate film after demolding treatment The above-mentioned adhesive composition was applied onto the liner so that the thickness after drying was 5 μm, and after drying at 110 ° C for 3 minutes, the substrate film (thickness) containing polyethylene terephthalate (without release treatment) 25 μm) was bonded to each other to prepare a support member D1 having a thickness of 30 μm. The coefficient of linear expansion is 60 ppm.

<支承構件D2> <support member D2>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚丙烯(OPP，無脫模處理)的基材膜(厚度50μm)貼合，製作厚度75μm的支承構件D2。線性膨脹係數為120ppm。 The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, the polypropylene was contained. A base film (thickness: 50 μm) of (OPP, no release treatment) was bonded to each other to prepare a support member D2 having a thickness of 75 μm. The coefficient of linear expansion is 120 ppm.

<支承構件D3> <support member D3>

將作為無塵室用的市售的無塵生產線膠帶的TW-PLT(TANIMURA制)切開為寬度36mm，作為支承構件D3使用。具有厚度75μm的聚氯乙烯層與厚度12μm的聚對苯二甲酸乙二醇酯層層疊而成的樹脂膜基材，總厚142μm，線性膨脹係數為80ppm。 TW-PLT (manufactured by TANIMURA), which is a commercially available dust-free production line tape for a clean room, was cut into a width of 36 mm and used as a support member D3. A resin film substrate having a polyvinyl chloride layer having a thickness of 75 μm and a polyethylene terephthalate layer having a thickness of 12 μm was laminated to have a total thickness of 142 μm and a linear expansion coefficient of 80 ppm.

<支承構件D4> <support member D4>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含低密度聚乙烯(LDPE，未經脫模處理)的樹脂膜基材(厚度50μm)貼 合併轉印，製作厚度75μm的支承構件D4。線性膨脹係數為230ppm。 The pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, and containing a low density Polyethylene (LDPE, unreleased) resin film substrate (thickness 50μm) The transfer was combined to form a support member D4 having a thickness of 75 μm. The coefficient of linear expansion is 230 ppm.

<支承構件D5> <support member D5>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的樹脂膜基材(厚度50μm)貼合併轉印，製作厚度75μm的支承構件D5。線性膨脹係數為60ppm。 The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, A resin film substrate (thickness: 50 μm) of ethylene phthalate (without release treatment) was attached and transferred to prepare a support member D5 having a thickness of 75 μm. The coefficient of linear expansion is 60 ppm.

<支承構件D6> <support member D6>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的基材膜(厚度75μm)貼合併轉印，製作厚度100μm的支承構件D6。線性膨脹係數為60ppm。 The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, A base film (thickness: 75 μm) of ethylene phthalate (without release treatment) was attached and transferred to prepare a support member D6 having a thickness of 100 μm. The coefficient of linear expansion is 60 ppm.

<支承構件D7> <support member D7>

在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的樹脂膜基材(厚度16μm)貼合併 轉印，製作厚度26μm的支承構件D7。線性膨脹係數為60ppm。 Applying the above-mentioned pressure-sensitive adhesive composition to a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying is 10 μm, drying at 110 ° C for 3 minutes, and containing the pair Resin film substrate (thickness 16μm) of ethylene phthalate (without release) Transfer and production of a support member D7 having a thickness of 26 μm. The coefficient of linear expansion is 60 ppm.

(實施例1) (Example 1)

將冷藏保存的形成在脫模膜A1上接著劑層C1恢復常溫，對接著劑層以達到脫模膜的厚度的1/2以下的切入深度的方式進行調整後，進行直徑320mm的圓形預切割加工。之後，除去接著劑層的不需要部分，將粘合膜B1以使其粘合劑層與接著劑層接觸的方式在室溫下與脫模膜A1層壓。然後，對粘合膜B1以達到脫模膜的厚度的1/2以下的切入深度的方式進行調節後，以與接著劑層呈同心圓狀進行直徑370mm的圓形預切割加工，以15N的張力卷取300片。接著，在脫模膜A1上的與設置有接著劑層和粘合膜的面相反的面、且在脫模膜A1的短邊方向的兩端部貼合支承構件D1，製作實施例1的晶圓加工用膠帶。 The adhesive layer C1 is formed in the release film A1, and the adhesive layer C1 is returned to normal temperature, and the adhesive layer is adjusted so as to have a depth of 1/2 or less of the thickness of the release film, and then a circular shape of 320 mm in diameter is prepared. Cutting processing. Thereafter, the unnecessary portion of the adhesive layer is removed, and the adhesive film B1 is laminated with the release film A1 at room temperature so that the adhesive layer is brought into contact with the adhesive layer. Then, the adhesive film B1 was adjusted so as to have a depth of cut of 1/2 or less of the thickness of the release film, and then a circular pre-cut process having a diameter of 370 mm was performed concentrically with the adhesive layer to 15 N. The tension is taken up by 300 pieces. Then, the support member D1 was bonded to the both surfaces of the release film A1 opposite to the surface on which the adhesive layer and the pressure-sensitive adhesive film were provided, and both ends in the short-side direction of the release film A1, and the Example 1 was produced. Tape for wafer processing.

(實施例2~8、比較例1、2) (Examples 2 to 8, Comparative Examples 1, 2)

按照與實施例1同樣的方法，以表1的組合製作實施例2~8和比較例1、2的晶圓加工用膠帶。 The wafer processing tapes of Examples 2 to 8 and Comparative Examples 1 and 2 were produced in the same manner as in Example 1 in the combination of Table 1.

〔空氣的侵入和轉印痕跡的抑制性評價〕 [Inhibition of air intrusion and transfer marks]

將實施例和比較例的晶圓加工用膠帶收納於聚乙烯制的袋，脫氣後進行熱密封，將聚丙烯制的側板安裝於兩端部，以成為十字的方式綁上2根PP帶並進行熔融接合得到包裝體，對於每種包裝體各準備2根。將這些包裝體在冰箱內(5℃)保存1個月後，從冰箱取出，將各種包裝體中的1根收納于包裝箱，載置於運送用卡車，在保持冷藏狀態(0~10℃)的情況下用3天的時間在平塚~秋田間(約1000km)往返。另一根與板狀的乾冰一起收納于包裝箱，載置於運送用卡車，用3天的時間在平塚~秋田間(約1000km)往返。此時，包裝箱的最低溫度為-43℃，最高溫度為7℃。之後，打開各包裝體，將捲筒恢復至常溫後打開包裝袋，解開輥筒，目視觀察空氣向接著劑層與脫模膜之間的侵入和轉印痕跡的有無。其結果如表2所示。 The wafer processing tapes of the examples and the comparative examples were placed in a polyethylene bag, degassed, and then heat-sealed, and the side plates made of polypropylene were attached to both end portions, and two PP tapes were attached so as to form a cross. The package was melt-bonded to obtain a package, and two packages were prepared for each package. After storing these packages in a refrigerator (5 ° C) for one month, they were taken out from the refrigerator, and one of the various packages was stored in a package, placed on a transport truck, and kept in a refrigerated state (0 to 10 ° C). In the case of the round trip between the Hiratsuka-Akita (about 1000km). The other one is stored in a packing box together with the plate-shaped dry ice, and is placed on a transport truck. It takes three days to travel between Hiratsuka and Akita (about 1000km). At this time, the minimum temperature of the package is -43 ° C, and the maximum temperature is 7 ° C. Thereafter, each package was opened, the roll was returned to normal temperature, the package was opened, the roll was unwound, and the presence or absence of intrusion and transfer marks between the adhesive layer and the release film was visually observed. The results are shown in Table 2.

〔安裝後的孔隙的抑制性評價〕 [Inhibition evaluation of pores after installation]

將實施例和比較例的粘接片收納於聚乙烯制的袋，脫氣後進行熱密封，將聚丙烯制的側板安裝於兩端部。然後，以成為十字的方式綁上2根PP帶並進行熔融接合。將這些包裝體在冰箱內(5℃)保存1個月後，從冰箱取出，與板狀的乾冰一起收納于包裝箱，載置於運送用卡車，用3天的時間在平塚~秋田間(約1000km)往返。此時，包裝箱的最低溫度為-43℃，最高溫度為7℃。之後， 打開各包裝體，將捲筒恢復至常溫後打開包裝袋，安裝至半導體晶圓。之後，通過顯微鏡確認接著劑層與半導體晶圓的貼合面有無孔隙(氣泡)。其結果如表2所示。作為半導體晶圓，使用大小為12英寸、厚度50μm的晶圓。半導體晶圓的安裝條件如下所述。 The adhesive sheets of the examples and the comparative examples were placed in a polyethylene bag, degassed, and then heat-sealed, and the side plates made of polypropylene were attached to both end portions. Then, two PP tapes were tied and joined by fusion so as to become a cross. These packages were stored in a refrigerator (5 ° C) for one month, and then taken out from the refrigerator, and stored in a package together with plate-shaped dry ice, placed in a transport truck, and used in a three-day period between Hiratsuka and Akita ( About 1000km) round trip. At this time, the minimum temperature of the package is -43 ° C, and the maximum temperature is 7 ° C. after that, Each package is opened, the roll is returned to normal temperature, the package is opened, and the package is mounted on a semiconductor wafer. Thereafter, it was confirmed by a microscope whether or not voids (air bubbles) were present on the bonding surface of the adhesive layer and the semiconductor wafer. The results are shown in Table 2. As the semiconductor wafer, a wafer having a size of 12 inches and a thickness of 50 μm was used. The mounting conditions of the semiconductor wafer are as follows.

<貼合條件> <Finishing conditions>

粘貼裝置：晶圓貼裝機DAM-812M(Takatori制) Pasting device: wafer mounter DAM-812M (made by Takatori)

粘貼速度計：50mm/sec Paste speed meter: 50mm/sec

粘貼壓力：0.1MPa Paste pressure: 0.1MPa

粘貼溫度：100℃ Pasting temperature: 100 ° C

表2所示，實施例所涉及的晶圓加工用膠帶中，支承構件的厚度為接著劑層的厚度的1.0倍~3.75倍，因此，不產生轉印痕跡，即使在溫度變化劇烈的情況下，也未看到空氣向接著劑層的內側的侵入，因此也未產生孔隙，得到良好的結果。 As shown in Table 2, in the tape for wafer processing according to the embodiment, the thickness of the support member is 1.0 to 3.75 times the thickness of the adhesive layer, so that no transfer marks are generated, even in the case where the temperature changes drastically. Also, no intrusion of air into the inside of the adhesive layer was observed, and therefore no pores were generated, and good results were obtained.

與此相對，比較例1所涉及的晶圓加工用膠帶中，支承構件的厚度為接著劑層的厚度的5倍，因此，溫度變化小時，雖然未看到空氣向接著劑層的內側的侵入，但是溫度變化劇烈的情況下，看到空氣向接著劑層的內側的侵入，即使在100℃的條件下將接著劑與半導體晶圓貼合時，一部分中也產生了孔隙。另外，比較例2所涉及的晶圓加工用膠帶中，支承構件的厚度為接著劑層的厚度的0.87倍，因此雖然未看到空氣向接著劑層的內側的侵入，但是產生了轉印痕跡，即使在100℃的條件下將接著劑與半導體晶圓貼合時，一部分中也產生了孔隙。 On the other hand, in the tape for wafer processing according to Comparative Example 1, since the thickness of the support member is five times the thickness of the adhesive layer, the temperature change is small, and the intrusion of air into the inside of the adhesive layer is not observed. However, when the temperature changes drastically, the intrusion of air into the inside of the adhesive layer is observed, and even when the adhesive is bonded to the semiconductor wafer under the condition of 100 ° C, voids are generated in a part. Further, in the tape for wafer processing according to Comparative Example 2, since the thickness of the support member is 0.87 times the thickness of the adhesive layer, the intrusion of air into the inside of the adhesive layer is not observed, but transfer marks are generated. Even when the adhesive is bonded to the semiconductor wafer at 100 ° C, voids are generated in a part.

Claims (14)

一種晶圓加工用膠帶，其特徵在於，具有：長的脫模膜；接著劑層，其設置在前述脫模膜的第1面上、且具有既定的平面形狀：粘合膜，其具有標籤部和包圍前述標籤部的外側的周邊部，前述標籤部以覆蓋前述接著劑層、且在前述接著劑層的周圍與前述脫模膜接觸的方式設置，並且具有既定的平面形狀；以及支承構件，其設置在前述脫模膜的與設置有前述接著劑層和粘合膜的第1面相反的第2面上、且設置在前述脫模膜的短邊方向的兩端部；前述支承構件具有前述接著劑層的厚度的1.0倍以上且4.0倍以下的厚度；23℃條件下的前述粘合膜的拉伸儲存彈性模量Eb與23℃條件下的前述脫模膜的拉伸儲存彈性模量Ea之比Eb/Ea為0.001~100。 A tape for processing a wafer, comprising: a long release film; an adhesive layer provided on a first surface of the release film and having a predetermined planar shape: an adhesive film having a label And a peripheral portion surrounding the outer side of the label portion, the label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined planar shape; and a support member Provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are provided, and provided at both end portions in the short-side direction of the release film; the support member The thickness of the adhesive layer is 1.0 times or more and 4.0 times or less; the tensile storage elastic modulus Eb of the adhesive film at 23 ° C; and the tensile storage elasticity of the release film under the condition of 23 ° C The modulus Ea ratio Eb/Ea is 0.001 to 100. 如申請專利範圍第1項的晶圓加工用膠帶，其中，前述支承構件的線性膨脹係數為300ppm/℃以下。 The tape for wafer processing according to the first aspect of the invention, wherein the support member has a linear expansion coefficient of 300 ppm/° C. or less. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述支承構件的線性膨脹係數與前述脫模膜的線性膨 脹係數之差為250ppm/℃以下。 The tape for wafer processing according to claim 1 or 2, wherein the linear expansion coefficient of the support member and the linear expansion of the release film The difference in the expansion coefficient is 250 ppm/° C. or less. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述粘合膜具有粘合劑層和基材膜，前述基材膜與前述支承構件之間的靜摩擦係數為0.2~2.0。 The tape for wafer processing according to claim 1 or 2, wherein the adhesive film has a pressure-sensitive adhesive layer and a base film, and a static friction coefficient between the base film and the support member is 0.2 to 2.0. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述支承構件設置於前述脫模膜的前述第2面上的與在前述第1面設置的前述接著劑層的外側對應的區域。 The wafer processing tape according to the first or second aspect of the invention, wherein the support member is provided on the second surface of the release film corresponding to the outer side of the adhesive layer provided on the first surface region. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述支承構件沿前述脫模膜的長邊方向連續地設置。 The tape for wafer processing according to claim 1 or 2, wherein the support member is continuously provided along a longitudinal direction of the release film. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述支承構件具有前述接著劑層的厚度以上的厚度。 The tape for wafer processing according to claim 1 or 2, wherein the support member has a thickness equal to or greater than a thickness of the adhesive layer. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述支承構件被著色。 The tape for wafer processing according to claim 1 or 2, wherein the support member is colored. 如申請專利範圍第8項的晶圓加工用膠帶，其中，前述支承構件根據晶圓加工用膠帶的種類被著色。 The tape for wafer processing according to claim 8, wherein the support member is colored according to the type of the tape for wafer processing. 如申請專利範圍第8項的晶圓加工用膠帶，其中， 前述支承構件根據晶圓加工用膠帶的厚度被著色。 Such as the wafer processing tape of claim 8 of the patent scope, wherein The support member is colored according to the thickness of the tape for wafer processing. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述支承構件具有2層以上的層疊結構。 The tape for wafer processing according to claim 1 or 2, wherein the support member has a laminated structure of two or more layers. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述支承構件為在選自由聚對苯二甲酸乙二醇酯、聚丙烯和高密度聚乙烯所成之群的樹脂膜基材上塗布有粘接著劑的粘接著帶。 The wafer processing tape according to claim 1 or 2, wherein the support member is a resin film base selected from the group consisting of polyethylene terephthalate, polypropylene, and high density polyethylene. The material is coated with an adhesive tape for bonding the adhesive. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，前述脫模膜的厚度Ta與前述粘合膜的厚度Tb之比Ta/Tb為0.07~2.5。 The tape for wafer processing according to claim 1 or 2, wherein a ratio Ta/Tb of a thickness Ta of the release film to a thickness Tb of the adhesive film is 0.07 to 2.5. 如申請專利範圍第1或2項的晶圓加工用膠帶，其中，在溫度23±2℃、剝離速度300mm/min的條件下的T型剝離試驗中，前述接著劑層與前述脫模膜之間的剝離力F1為0.025~0.075N/100mm，前述接著劑層與前述粘合膜之間的剝離力F2為0.08~10N/100mm，F1<F2。 The wafer processing tape according to claim 1 or 2, wherein the adhesive layer and the release film are in a T-peel test under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. The peeling force F1 is 0.025 to 0.075 N/100 mm, and the peeling force F2 between the adhesive layer and the adhesive film is 0.08 to 10 N/100 mm, and F1 < F2.