TWI613716B - Wafer processing tape - Google Patents
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- TWI613716B TWI613716B TW104140170A TW104140170A TWI613716B TW I613716 B TWI613716 B TW I613716B TW 104140170 A TW104140170 A TW 104140170A TW 104140170 A TW104140170 A TW 104140170A TW I613716 B TWI613716 B TW I613716B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
- C09J2433/006—Presence of (meth)acrylic polymer in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2461/00—Presence of condensation polymers of aldehydes or ketones
- C09J2461/006—Presence of condensation polymers of aldehydes or ketones in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
- C09J2463/006—Presence of epoxy resin in the substrate
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明提供一種晶圓加工用膠帶，該晶圓加工用膠帶能夠降低標籤痕跡的產生，且能夠降低接著劑層與粘合膜之間的空氣(air)的捲入。其特徵在於，具有：長的脫模膜(11)；接著劑層(12)，其設置在脫模膜(11)的第1面上、且具有既定的平面形狀；粘合膜(13)，其具有標籤部(13a)和包圍標籤部(13a)的外側的周邊部(13b)，標籤部(13a)以覆蓋接著劑層(12)、且在接著劑層(12)的周圍與上述脫模膜(11)接觸的方式設置，並且具有既定的平面形狀；以及支承構件(14)，其設置在脫模膜(11)的與第1面相反的第2面上、且為脫模膜(12)的短邊方向的兩端部，並且以達到前述脫模膜(11)的短邊方向中的與接著劑層(12)的端部對應的區域的方式設置。 The present invention provides a tape for processing wafers. The tape for processing wafers can reduce the occurrence of label marks and can reduce the entanglement of air between the adhesive layer and the adhesive film. It is characterized by having: a long release film (11); an adhesive layer (12) which is provided on the first surface of the release film (11) and has a predetermined planar shape; and an adhesive film (13) It has a label portion (13a) and a peripheral portion (13b) surrounding the outside of the label portion (13a). The label portion (13a) covers the adhesive layer (12), and surrounds the adhesive layer (12) with the above. The release film (11) is provided in a contact manner and has a predetermined planar shape; and a support member (14) is provided on the second surface of the release film (11) opposite to the first surface and is a release film. Both ends in the short-side direction of the film (12) are provided so as to reach a region corresponding to the ends of the adhesive layer (12) in the short-side direction of the release film (11).
Description
本發明涉及晶圓加工用膠帶，特別是涉及具有切割膠帶和晶粒接合膜這2個功能的晶圓加工用膠帶。 The present invention relates to a tape for processing a wafer, and more particularly to a tape for processing a wafer having two functions of a dicing tape and a die-bonding film.
近來，開發了兼具切割膠帶和晶粒接合膜(也稱為晶圓貼裝膜)這2個功能的切割/晶粒接合帶，前述切割膠帶在將半導體晶圓切斷分離(晶粒切割)為各個晶片時用於將半導體晶片固定，前述晶粒接合膜用於將切斷後的半導體晶圓與引線框架或封裝基板等粘接，或者在堆疊封裝中用於將半導體晶片之間層疊、粘接。 Recently, a dicing / die bonding tape having both functions of a dicing tape and a die bonding film (also referred to as a wafer mounting film) has been developed. The dicing tape is used to cut and separate semiconductor wafers (die cutting). ) Is used to fix semiconductor wafers for each wafer, and the aforementioned die-bonding film is used to bond the cut semiconductor wafer to a lead frame or a package substrate, or to stack semiconductor wafers in a stacked package, Bonding.
作為這樣的切割/晶粒接合帶，考慮到與晶圓的粘貼、切割時向環形框架上的安裝等作業性，有的實施了預切割加工。 As such a dicing / die bonding tape, in consideration of workability such as sticking to a wafer and mounting on a ring frame during dicing, a pre-cutting process is performed in some cases.
預切割加工後的切割/晶粒接合帶的例子示於圖4和圖5。圖4為示出將切割/晶粒接合帶卷取為輥筒狀後的狀態的圖，圖5(a)為切割/晶粒接合帶的俯視圖，圖5(b)為圖5(a)的線B-B的剖視圖。切割/ 晶粒接合帶50包含脫模膜51、接著劑層52和粘合膜53。接著劑層52被加工為與晶圓的形狀對應的圓形，具有圓形標籤形狀。粘合膜53是與切割用的環形框架的形狀對應的圓形部分的周邊區域被除去後的膜，如圖所示，具有圓形標籤部53a和包圍其外側的周邊部53b。接著劑層52與粘合膜53的圓形標籤部53a的中心對齊層疊，並且粘合膜53的圓形標籤部53a覆蓋接著劑層52，且在其周圍與脫模膜51接觸。 Examples of the dicing / die bonding tape after the pre-cutting processing are shown in FIGS. 4 and 5. FIG. 4 is a view showing a state where the dicing / die bonding tape is wound into a roll shape, FIG. 5 (a) is a plan view of the dicing / die bonding tape, and FIG. 5 (b) is FIG. 5 (a) Sectional view of line BB. Cutting / The die bonding tape 50 includes a release film 51, an adhesive layer 52, and an adhesive film 53. The adhesive layer 52 is processed into a circular shape corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 53 is a film obtained by removing a peripheral region of a circular portion corresponding to the shape of a circular frame for cutting. As shown in the figure, the adhesive film 53 includes a circular label portion 53 a and a peripheral portion 53 b surrounding the outside. The adhesive layer 52 and the center of the circular label portion 53 a of the adhesive film 53 are laminated in alignment, and the circular label portion 53 a of the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around it.
在切割晶圓時，從層疊狀態的接著劑層52和粘合膜53剝離脫模膜51，如圖6所示，在接著劑層52上粘貼半導體晶圓W的背面，在粘合膜53的圓形標籤部53a的外周部粘合固定切割用環形框架R。在該狀態下切割半導體晶圓W，之後，對粘合膜53實施紫外線照射等固化處理，拾取半導體晶片。此時，粘合膜53由於固化處理而粘合力下降，因此易於從接著劑層52剝離，半導體晶片以在背面附著有接著劑層52的狀態被拾取。在半導體晶片的背面附著的接著劑層52之後在將半導體晶片與引線框架、封裝基板或者其他半導體晶片粘接時，作為晶粒接合膜發揮作用。 When the wafer is diced, the release film 51 is peeled from the adhesive layer 52 and the adhesive film 53 in a laminated state. As shown in FIG. An outer peripheral portion of the circular label portion 53a is bonded and fixed to the ring frame R for cutting. After the semiconductor wafer W is diced in this state, a curing process such as ultraviolet irradiation is performed on the adhesive film 53 to pick up the semiconductor wafer. At this time, since the adhesive strength of the adhesive film 53 is lowered by the curing process, the adhesive film 53 is easily peeled from the adhesive layer 52, and the semiconductor wafer is picked up in a state where the adhesive layer 52 is adhered to the back surface. The adhesive layer 52 attached to the back surface of the semiconductor wafer functions as a die bonding film when the semiconductor wafer is bonded to a lead frame, a package substrate, or another semiconductor wafer.
另外，如上所述的切割/晶粒接合帶50中，接著劑層52與粘合膜53的圓形標籤部53a層疊而成的部分比粘合膜53的周邊部53b厚。因此，在作為產品卷為輥筒狀時，接著劑層52和粘合膜53的圓形標籤部53a的層疊部分與粘合膜53的周邊部53b的高差相互重合，產 生在柔軟的接著劑層52表面轉印高差的現象、即圖7所示的轉印痕跡(也稱為標籤痕跡、皺褶或卷印)。這樣的轉印痕跡的產生特別是在接著劑層52由柔軟的樹脂形成時或具有厚度時、以及切割/晶粒接合帶50的卷數多時較為顯著。而且，若產生轉印痕跡，則由於接著劑層與半導體晶圓的粘接不良，在晶圓的加工時有可能產生問題。 In the dicing die-bonding tape 50 described above, the portion where the adhesive layer 52 and the circular label portion 53 a of the adhesive film 53 are laminated is thicker than the peripheral portion 53 b of the adhesive film 53. Therefore, when the roll is rolled as a product, the height difference between the laminated portion of the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 and the peripheral portion 53b of the adhesive film 53 overlap with each other to produce a product. The phenomenon in which a step difference is generated on the surface of the soft adhesive layer 52 is a transfer mark (also referred to as a label mark, wrinkle, or roll printing) shown in FIG. 7. The generation of such a transfer mark is particularly significant when the adhesive layer 52 is formed of a soft resin or has a thickness, and when the number of rolls of the dicing die-bonding tape 50 is large. In addition, if a transfer mark is generated, problems may occur during wafer processing due to poor adhesion between the adhesive layer and the semiconductor wafer.
為瞭解決這樣的問題，開發了如下的晶圓加工用膠帶：在脫模膜的與設置有接著劑層和粘合膜的第1面相反的第2面上、且脫模膜的短邊方向的兩端部設置支承構件(例如參照專利文獻1)。這樣的晶圓加工用膠帶由於設置有支承構件，因此在將晶圓加工用膠帶卷取為輥筒狀時，能夠將施加於膠帶的卷取壓分散、或者使該壓力集中於支承構件，因此能夠抑制轉印跡在接著劑層上的形成。 In order to solve such problems, a tape for wafer processing has been developed in which the short side of the release film is on the second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided. Support members are provided at both ends in the direction (for example, refer to Patent Document 1). Since such a wafer processing tape is provided with a support member, when the wafer processing tape is wound into a roll shape, the winding pressure applied to the tape can be dispersed or the pressure can be concentrated on the support member. It is possible to suppress the formation of the transblot on the adhesive layer.
[專利文獻1]日本專利第4360653號公報 [Patent Document 1] Japanese Patent No. 4360653
然而，一般而言，粘合膜53覆蓋接著劑層52、且在其周圍與脫模膜51接觸，由於接著劑層52的厚度，有時在接著劑層52的周緣部在脫模膜51與粘合膜 53之間產生極微的空隙，從而殘留空氣(air)。這樣的脫模膜51與粘合膜53之間的空氣也有時發生移動而向圓形標籤部53a的外側逃逸，此時不會對物性造成顯著影響。 In general, however, the adhesive film 53 covers the adhesive layer 52 and contacts the release film 51 around the adhesive layer 52. Depending on the thickness of the adhesive layer 52, the release film 51 may be formed on the peripheral edge of the adhesive layer 52 in some cases. With adhesive film There is an extremely small gap between 53 so that air remains. The air between such a release film 51 and the adhesive film 53 may also move and escape to the outside of the circular label portion 53a. In this case, the physical properties are not significantly affected.
然而，在像專利文獻1的晶圓加工用膠帶那樣為了防止轉印痕跡而設置具有接著劑層的厚度以上的厚度的支承構件時，接著劑層的外側變得具有更大厚度，因此存在變得容易將接著劑層周緣部的空氣引誘至接著劑層的內側的風險。 However, when a support member having a thickness equal to or greater than the thickness of the adhesive layer is provided in order to prevent transfer marks like the wafer processing tape of Patent Document 1, the outside of the adhesive layer becomes larger in thickness, so there is a change. There is a risk that air in the peripheral portion of the adhesive layer may be easily attracted to the inner side of the adhesive layer.
因此，本發明的課題在於提供一種晶圓加工用膠帶，該晶圓加工用膠帶能夠降低標籤痕跡的產生，且能夠降低接著劑層與粘合膜之間的空氣(air)的捲入。 Therefore, an object of the present invention is to provide a wafer processing tape which can reduce the occurrence of label marks and can reduce the entrainment of air between the adhesive layer and the adhesive film.
為瞭解決以上的課題，本發明所涉及的晶圓加工用膠帶的特徵在於，具有：長的脫模膜；接著劑層，其設置在上述脫模膜的第1面上、且具有既定的平面形狀；粘合膜，其具有標籤部和包圍上述標籤部的外側的周邊部，上述標籤部以覆蓋上述接著劑層、且在上述接著劑層的周圍與上述脫模膜接觸的方式設置，並且具有既定的平面形狀；以及支承構件，其設置在上述脫模膜的與設置有上述接著劑層和粘合膜的第1面相反的第2面上、且設置在上述脫模膜的短邊方向的兩端部，並且以達到上述脫模膜的短邊方向中的與上述接著劑層的端部對應的區域的 方式設置。 In order to solve the above problems, the wafer processing tape according to the present invention is characterized by having a long release film and an adhesive layer provided on the first surface of the release film and having a predetermined Planar shape; an adhesive film having a label portion and a peripheral portion surrounding the outside of the label portion, the label portion being provided so as to cover the adhesive layer and to be in contact with the release film around the adhesive layer, And has a predetermined planar shape; and a support member provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and provided on a short side of the release film Both ends in the side direction and reach the area corresponding to the end of the adhesive layer in the short side direction of the release film Way setting.
另外，上述半導體加工用帶優選：將上述脫模膜的短邊方向中的上述支承構件的寬度的合計設為sD，將上述接著劑層的直徑設為a
另外，上述半導體加工用帶優選：上述支承構件的線性膨脹係數為300ppm/℃以下。 The semiconductor processing tape preferably has a linear expansion coefficient of the support member of 300 ppm / ° C or lower.
另外，上述半導體加工用帶優選：上述支承構件的線性膨脹係數與上述脫模膜的線性膨脹係數之差為250ppm/℃以下。 In the semiconductor processing tape, it is preferable that a difference between a linear expansion coefficient of the support member and a linear expansion coefficient of the release film is 250 ppm / ° C or less.
另外，上述半導體加工用帶的上述粘合膜優選：具有粘合劑層和基材膜，上述基材膜與上述支承構件之間的靜摩擦係數為0.2~2.0。 The adhesive film of the semiconductor processing tape preferably includes an adhesive layer and a base film, and a static friction coefficient between the base film and the support member is 0.2 to 2.0.
另外，上述半導體加工用帶優選：上述支承構件沿上述脫模膜的長邊方向連續地設置。 In the semiconductor processing tape, it is preferable that the support member is continuously provided in a longitudinal direction of the release film.
另外，上述半導體加工用帶優選：上述支承構件具有上述接著劑層的厚度以上的厚度。 In the semiconductor processing tape, preferably, the support member has a thickness equal to or greater than a thickness of the adhesive layer.
另外，上述半導體加工用帶中，上述支承構件可以被著色。此時，支承構件優選根據晶圓加工用膠帶的種類被著色。另外，可以據晶圓加工用膠帶的厚度被著色。 Moreover, in the said semiconductor processing tape, the said support member may be colored. In this case, the support member is preferably colored according to the type of the wafer processing tape. Moreover, it can be colored according to the thickness of the wafer processing tape.
另外，上述半導體加工用帶：優選上述支承構件具有2層以上的層疊結構。 Moreover, the said semiconductor processing tape: It is preferable that the said support member has a laminated structure of two or more layers.
另外，上述半導體加工用帶優選：上述支承 構件為在選自聚對苯二甲酸乙二醇酯、聚丙烯和高密度聚乙烯中的樹脂膜基材上塗佈有粘接著劑的粘接著帶。 Moreover, it is preferable that the said semiconductor processing tape is the said support. The member is an adhesive tape on which a resin film substrate selected from polyethylene terephthalate, polypropylene, and high-density polyethylene is coated with an adhesive.
另外，上述半導體加工用帶優選：23℃條件下的上述粘合膜的拉伸儲存彈性模量Eb與23℃條件下的上述脫模膜的拉伸儲存彈性模量Ea之比Eb/Ea為0.001~100。 The semiconductor processing tape preferably has a ratio Eb / Ea of the tensile storage elastic modulus Eb of the adhesive film at 23 ° C. to the tensile storage elastic modulus Ea of the release film at 23 ° C. 0.001 ~ 100.
另外，上述半導體加工用帶優選：上述脫模膜的厚度Ta與上述粘合膜的厚度Tb之比Ta/Tb為0.07~2.5。 In the semiconductor processing tape, a ratio Ta / Tb of a thickness Ta of the release film to a thickness Tb of the adhesive film is preferably 0.07 to 2.5.
另外，上述半導體加工用帶優選：在溫度23±2℃、剝離速度300mm/min的條件下的T型剝離試驗中，上述接著劑層與上述脫模膜之間的剝離力F1為0.025~0.075N/100mm，上述接著劑層與上述粘合膜之間的剝離力F2為0.08~10N/100mm，F1<F2。 The semiconductor processing tape preferably has a peeling force F1 between the adhesive layer and the release film in a T-type peeling test at a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min, which is 0.025 to 0.075. N / 100mm, the peeling force F2 between the adhesive layer and the adhesive film is 0.08 to 10N / 100mm, and F1 <F2.
根據本發明，能夠降低標籤痕跡的產生，且能夠降低接著劑層與粘合膜之間的空氣(air)的捲入。 According to the present invention, it is possible to reduce generation of label marks and to reduce air entanglement between the adhesive layer and the adhesive film.
10‧‧‧晶圓加工用膠帶 10‧‧‧ Wafer Processing Tape
11‧‧‧脫模膜 11‧‧‧ release film
12‧‧‧接著劑層 12‧‧‧ Adhesive layer
13‧‧‧粘合膜 13‧‧‧adhesive film
13a‧‧‧圓形標籤部 13a‧‧‧Circular label section
13b‧‧‧周邊部 13b‧‧‧ Peripheral
14、14'、14"‧‧‧支承構件 14, 14 ', 14 "‧‧‧ support members
圖1(a)為本發明的實施方式所涉及的晶圓加工用膠帶的俯視圖，(b)為(a)的線A-A的剖視圖。 FIG. 1 (a) is a plan view of a wafer processing tape according to an embodiment of the present invention, and (b) is a cross-sectional view taken along line A-A of (a).
圖2為本發明的另一實施方式所涉及的晶圓加工用膠 帶的剖視圖。 FIG. 2 is a wafer processing adhesive according to another embodiment of the present invention Sectional view of the belt.
圖3為本發明的再另一實施方式所涉及的晶圓加工用膠帶的剖視圖。 3 is a cross-sectional view of a wafer processing tape according to still another embodiment of the present invention.
圖4為現有的晶圓加工用膠帶的立體圖。 FIG. 4 is a perspective view of a conventional wafer processing tape.
圖5(a)為現有的晶圓加工用膠帶的俯視圖，(b)為(a)的線B-B的剖視圖。 Fig. 5 (a) is a plan view of a conventional wafer processing tape, and (b) is a cross-sectional view taken along line B-B of (a).
圖6為示出晶圓加工用膠帶與切割用環形框架貼後的狀態的剖視圖。 FIG. 6 is a cross-sectional view showing a state where the wafer processing tape is attached to the dicing ring frame.
圖7為用於說明現有的晶圓加工用膠帶的問題的示意圖。 FIG. 7 is a schematic diagram for explaining a problem of a conventional wafer processing tape.
以下基於附圖詳細地說明本發明的實施方式。圖1(a)為本發明的實施方式所涉及的晶圓加工用膠帶(切割/晶粒接合帶)的俯視圖，圖1(b)為圖1(a)的線A-A的剖視圖。 Hereinafter, embodiments of the present invention will be described in detail based on the drawings. FIG. 1 (a) is a plan view of a wafer processing tape (dicing / die bonding tape) according to an embodiment of the present invention, and FIG. 1 (b) is a cross-sectional view taken along line A-A of FIG. 1 (a).
如圖1(a)和圖1(b)所示，晶圓加工用膠帶10具有長的脫模膜11、接著劑層12、粘合膜13和支承構件14。 As shown in FIGS. 1 (a) and 1 (b), the wafer processing tape 10 includes a long release film 11, an adhesive layer 12, an adhesive film 13, and a support member 14.
接著劑層12設置在脫模膜的第1面上，具有與晶圓的形狀對應的圓形標籤形狀。粘合膜13具有圓形標籤部13a和包圍該圓形標籤部13a的外側的周邊部13b，前述圓形標籤部13a以覆蓋接著劑層12、且在接著劑層12的周圍與脫模膜接觸的方式設置。周邊部13b包 括將圓形標籤部13a的外側完全包圍的形態、和如圖所示的完全不包圍的形態。圓形標籤部13a具有與切割用的環形框架對應的形狀。而且，支承構件14設置在脫模膜11的與設置有接著劑12和粘合膜13的第1面11a相反的第2面11b上、且設置在脫模膜11的短邊方向的兩端部，並且以達到脫模膜11的短邊方向中的與接著劑層12的端部對應的區域的方式設置。 The adhesive layer 12 is provided on the first surface of the release film and has a circular label shape corresponding to the shape of the wafer. The adhesive film 13 has a circular label portion 13a and a peripheral portion 13b surrounding the outside of the circular label portion 13a. The circular label portion 13a covers the adhesive layer 12 and surrounds the adhesive layer 12 and the release film. The way of contact is set. Peripheral 13b pack Examples include a form that completely surrounds the outer side of the circular label portion 13a, and a form that does not completely surround as shown in the figure. The circular label portion 13a has a shape corresponding to the circular frame for cutting. The support member 14 is provided on the second surface 11 b of the release film 11 opposite to the first surface 11 a on which the adhesive 12 and the adhesive film 13 are provided, and is provided on both ends in the short-side direction of the release film 11. It is provided so that it may reach the area | region corresponding to the edge part of the adhesive bond layer 12 in the short side direction of the release film 11.
以下對本實施方式的晶圓加工用膠帶10的各構成要素詳細地進行說明。 Hereinafter, each component of the tape 10 for wafer processing which concerns on this embodiment is demonstrated in detail.
作為本發明的晶圓加工用膠帶10中使用的脫模膜11，可以使用聚酯(PET、PBT、PEN、PBN、PTT)系、聚烯烴(PP、PE)系、共聚物(EVA、EEA、EBA)系以及將這些材料部分取代而進一步提高了接著性、機械強度的膜。另外，也可以為這些膜的層疊體。 As the release film 11 used for the wafer processing tape 10 of the present invention, polyester (PET, PBT, PEN, PBN, PTT), polyolefin (PP, PE), and copolymer (EVA, EEA) can be used. , EBA) series, and a film in which these materials are partially substituted to further improve adhesion and mechanical strength. A laminate of these films may also be used.
脫模膜的厚度沒有特別限制，可以適宜地設定，優選25~50μm。 The thickness of the release film is not particularly limited and can be appropriately set, and is preferably 25 to 50 μm.
本發明的接著劑層12如上所述形成在脫模膜11的第1面11a上，具有與晶圓的形狀對應的圓形標籤形狀。 The adhesive layer 12 of the present invention is formed on the first surface 11 a of the release film 11 as described above, and has a circular label shape corresponding to the shape of the wafer.
接著劑層12在貼合併切割半導體晶圓等後、在拾取晶片時，附著在晶片背面，作為將晶片固定於基 板、引線框架時的接著劑使用。作為接著劑層12，可以優選使用含有選自環氧系樹脂、丙烯酸系樹脂、酚系樹脂中的至少1種的粘接著劑等。另外，也可以使用聚醯亞胺系樹脂、矽酮系樹脂。其厚度可以適宜設定，但優選5~100μm左右。 After the adhesive layer 12 is attached to a diced semiconductor wafer or the like, when the wafer is picked up, it is attached to the back of the wafer to fix the wafer to a substrate. Adhesive for boards and lead frames. As the adhesive layer 12, an adhesive agent containing at least one selected from an epoxy resin, an acrylic resin, and a phenol resin can be preferably used. Alternatively, a polyimide-based resin or a silicone-based resin may be used. The thickness can be appropriately set, but is preferably about 5 to 100 μm.
本發明的粘合膜13如上所述具有與切割用的環形框架的形狀對應的圓形標籤部13a、和包圍其外側的周邊部13b。這樣的粘合膜可以通過預切割加工從膜狀粘合劑除去圓形標籤部13a的周邊區域來形成。 As described above, the adhesive film 13 of the present invention includes a circular label portion 13a corresponding to the shape of the ring frame for cutting, and a peripheral portion 13b surrounding the outside thereof. Such an adhesive film can be formed by removing the peripheral region of the circular label portion 13 a from the film-like adhesive by a pre-cut process.
作為粘合膜13，沒有特別限制，只要在切割晶圓時具有充分的粘合力而不使晶圓剝離，在切割後拾取晶片時，顯示出低粘合力以使能夠容易地從接著劑層剝離，就可以適當地使用例如在基材膜上設置有粘合劑層的膜。 The adhesive film 13 is not particularly limited, as long as it has sufficient adhesive force when dicing the wafer without peeling the wafer, and when picking up the wafer after dicing, it exhibits low adhesive force so that it can be easily removed from the adhesive. When the layer is peeled off, for example, a film provided with an adhesive layer on a base film can be suitably used.
作為粘合膜13的基材膜，只要是以往公知的膜，就可以沒有特別限制地使用，但使用輻射線固化性的材料作為後述的粘合劑層時，優選使用具有輻射線透射性的膜。 The base film of the adhesive film 13 can be used without any particular limitation as long as it is a conventionally known film. However, when a radiation-curable material is used as an adhesive layer to be described later, it is preferable to use a radiation-transparent material. membrane.
例如，作為其材料，可以列舉：聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸類共聚物、離聚物等α- 烯烴的均聚物或共聚物、或者它們的混合物、聚氨酯、苯乙烯-乙烯-丁烯或戊烯系共聚物、聚醯胺-多價醇共聚物等熱塑性彈性體、以及它們的混合物。另外，基材膜可以為選自這些中的2種以上材料混合而成的膜，也可以為它們單層或多層化而成的膜。 Examples of the material include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, and ethylene-ethyl acrylate Ester copolymers, ethylene-methyl acrylate copolymers, ethylene-acrylic copolymers, ionomers, etc. Homopolymers or copolymers of olefins, or mixtures thereof, thermoplastic elastomers such as polyurethanes, styrene-ethylene-butene or pentene-based copolymers, polyamide-polyol copolymers, and mixtures thereof. The base film may be a film in which two or more materials selected from these are mixed, or a film in which a single layer or a plurality of layers are formed.
基材膜的厚度沒有特別限制，可以適宜地設定，但優選50~200μm。 The thickness of the substrate film is not particularly limited and can be appropriately set, but is preferably 50 to 200 μm.
作為粘合膜13的粘合劑層中使用的樹脂，沒有特別限制，可以使用粘合劑中使用的公知的氯代聚丙烯樹脂、丙烯酸類樹脂、聚酯樹脂、聚氨酯樹脂、環氧樹脂等。 The resin used in the adhesive layer of the adhesive film 13 is not particularly limited, and known chloropolypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, and the like used in the adhesive can be used. .
優選在粘合劑層13的樹脂中適宜地配合丙烯酸系粘合劑、輻射線聚合性化合物、光聚合引發劑、固化劑等來製備粘合劑。粘合劑層13的厚度可以沒有特別限制適宜地設定，但優選5~30μm。 It is preferable to prepare an adhesive by suitably mixing an acrylic adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent, and the like into the resin of the adhesive layer 13. The thickness of the pressure-sensitive adhesive layer 13 can be appropriately set without any particular limitation, but is preferably 5 to 30 μm.
在粘合劑層中配合輻射線聚合性化合物後，通過輻射線固化，可以容易地從接著劑層進行剝離。該輻射線聚合性化合物，例如可以使用能夠通過光照射能發生三維網狀化的在分子內具有至少2個以上光聚合性碳-碳雙鍵的低分子量化合物。 After the radiation polymerizable compound is added to the pressure-sensitive adhesive layer, the radiation-curable compound can be easily peeled from the adhesive layer. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two or more photopolymerizable carbon-carbon double bonds in a molecule capable of three-dimensional network formation by light irradiation can be used.
具體地，能夠應用：三羥甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯(dipentaerythritol monohydroxy pentaacrylate)、二季戊四醇六丙烯酸酯、1,4-丁二醇二 丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、寡丙烯酸酯(oligoester acrylate)等。 Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediyl Diol Acrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like.
另外，除如上所述的丙烯酸酯系化合物外，也可以使用氨基甲酸酯丙烯酸酯系寡聚物。氨基甲酸酯丙烯酸酯系寡聚物可以通過使聚酯型或聚醚型等多價醇化合物與多價異氰酸酯化合物(例如，2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-亞二甲苯基二異氰酸酯、1,4-亞二甲苯基二異氰酸酯、二苯基甲烷4,4-二異氰酸酯等)反應來得到末端異氰酸酯氨基甲酸酯預聚物，再使該末端異氰酸酯氨基甲酸酯預聚物與具有羥基的丙烯酸酯或者甲基丙烯酸酯(例如，丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、甲基丙烯酸2-羥基丙酯、聚乙二醇丙烯酸酯、聚乙二醇甲基丙烯酸酯等)反應來得到。 In addition to the acrylate-based compound described above, a urethane acrylate-based oligomer may be used. The urethane acrylate-based oligomer can be obtained by combining a polyvalent alcohol compound such as a polyester type or a polyether type with a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1 , 3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) to obtain a terminal isocyanate urethane prepolymer, and then make the terminal Isocyanate urethane prepolymers with acrylates or methacrylates with hydroxyl groups (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-methacrylate Hydroxypropyl ester, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.).
粘合劑層中可以混合有選自上述的樹脂中的2種以上。 The pressure-sensitive adhesive layer may be mixed with two or more kinds selected from the above-mentioned resins.
使用光聚合引發劑時，例如可以使用：異丙基苯偶姻醚、異丁基苯偶姻醚、二苯甲酮、米蚩酮、氯噻噸酮、十二烷基噻噸酮(dodecyl thioxanthone)、二甲基噻噸酮(dimethyl thioxanthone)、二乙基噻噸酮(diethyl thioxanthone)、苄基二甲基縮酮(benzyldimethylketal)、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等。這些光聚合引發劑的配合量相對於丙烯酸系共聚物100質量份優選0.01~5質量份。 When a photopolymerization initiator is used, for example, cumene benzoin ether, isobutyl benzoin ether, benzophenone, mithone, chlorothioxanthone, dodecyl thioxanthone (dodecyl) can be used. thioxanthone), dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethylketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethyl Phenylpropane and the like. The blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.
支承構件14設置在脫模膜11的與設置有接著劑12和粘合膜13的第1面11a相反的第2面11b、且為脫模膜11的短邊方向的兩端部，並且以達到脫模膜11的短邊方向中的與接著劑層12的端部對應的區域的方式設置。可見，通過設置支承構件14，由此在將晶圓加工用膠帶10卷取為輥筒狀時，能夠使施加於膠帶的卷取壓分散、或者使其集中於支承構件14，因此能夠抑制轉印跡在接著劑層12上的形成。 The support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is the both ends of the release film 11 in the short-side direction, and It is provided so that it may reach the area | region corresponding to the edge part of the adhesive bond layer 12 in the short side direction of the mold release film 11. It can be seen that, by providing the support member 14, when the wafer processing tape 10 is wound into a roll shape, the winding pressure applied to the tape can be dispersed or concentrated on the support member 14, so that the rotation can be suppressed. Formation of imprints on the adhesive layer 12.
另外，由於支承構件14以達到脫模膜11的短邊方向中的與接著劑層12的端部對應的區域的方式設置，因此能夠降低在接著劑層12與粘合膜13的圓形標籤部13a之間的空氣(air)的捲入。即由於晶圓加工用膠帶10被捲曲為輥筒狀，因此空氣易於集中於脫模膜11的短邊方向中接著劑層12的端部周緣的脫模膜11與圓形標籤部13a之間。本申請發明中，晶圓加工用膠帶10被卷取為輥筒狀時，支承構件14隔著標籤部13a達到脫模膜11的短邊方向中接著劑層12的端部，因此脫模膜11的短邊方向中與接著劑層12的端部的對應的晶圓加工用膠帶10整體的厚度，與和接著劑層12的外側的部分對應的晶圓加工用膠帶10整體的厚度相比，僅接著劑層12的厚度增厚。因此，能夠防止空氣侵入到為接著劑層12的內側的區域的接著劑層12與粘合膜13的圓形標籤部13a之間。 In addition, since the support member 14 is provided so as to reach a region corresponding to the end portion of the adhesive layer 12 in the short-side direction of the release film 11, the circular labels on the adhesive layer 12 and the adhesive film 13 can be reduced. Entrainment of air between the sections 13a. That is, since the wafer processing tape 10 is rolled into a roll shape, air is likely to be concentrated between the release film 11 and the circular label portion 13 a of the peripheral edge of the adhesive layer 12 in the short-side direction of the release film 11. . In the invention of the present application, when the wafer processing tape 10 is wound into a roll shape, the support member 14 reaches the end of the adhesive layer 12 in the short-side direction of the release film 11 via the label portion 13a. The thickness of the entire wafer processing tape 10 corresponding to the end portion of the adhesive layer 12 in the short-side direction of 11 is smaller than the entire thickness of the wafer processing tape 10 corresponding to the outer portion of the adhesive layer 12. Only the thickness of the adhesive layer 12 is increased. Therefore, it is possible to prevent air from entering between the adhesive layer 12 which is a region inside the adhesive layer 12 and the circular label portion 13 a of the adhesive film 13.
另外，在設置有接著劑12和粘合膜13的第1面11a形成支承構件的情況下，對支承層的寬度存在限制，與此相對，本實施方式的構成中，能夠較寬地確保支承構件14的寬度，能夠更有效地抑制轉印痕跡的產生。 In addition, when a support member is formed on the first surface 11 a on which the adhesive 12 and the adhesive film 13 are provided, there is a limitation on the width of the support layer. In contrast, in the configuration of the present embodiment, it is possible to secure a wider support The width of the member 14 can more effectively suppress the occurrence of transfer marks.
另外，通過在脫模膜11的第2面11b設置支承構件14，由此可得到使對支承構件14的位置偏移的允許度增大的效果。 In addition, by providing the support member 14 on the second surface 11 b of the release film 11, it is possible to obtain the effect of increasing the tolerance for the positional deviation of the support member 14.
此外，通過以達到脫模膜11的短邊方向中與接著劑層12的端部對應的區域的方式設置支承構件14，由此雖然在接著劑層12的端部有可能產生支承構件14所致的轉印痕跡，但一般而言，考慮到與晶圓W的貼合留白，接著劑層12比晶圓W大，晶圓W不與接著劑層12的端部貼合，因此不存在問題。另外，在產生支承構件14所致的轉印痕跡的情況下，是沿著脫模膜11的長邊方向產生，但由於脫模膜11的長邊方向為與晶圓W貼合時的行進方向，因此即使是在接著劑層12的端部貼合晶圓W的情況下，支承構件14的轉印痕跡所致的空氣也易於在貼合時散失，而不易作為孔隙殘留在與晶圓W的介面。 In addition, by providing the support member 14 so as to reach a region corresponding to the end portion of the adhesive layer 12 in the short-side direction of the release film 11, the support member 14 may be generated at the end portion of the adhesive layer 12. In general, the adhesive layer 12 is larger than the wafer W in consideration of the bonding gap with the wafer W. The wafer W does not adhere to the end of the adhesive layer 12 and therefore does not There is a problem. In addition, in the case where a transfer mark caused by the support member 14 is generated along the long-side direction of the release film 11, the long-side direction of the release film 11 is the travel during bonding to the wafer W. Direction, even when the wafer W is bonded to the end of the adhesive layer 12, the air caused by the transfer marks of the support member 14 is easily lost during bonding, and it is not easy to remain as voids on the wafer. W interface.
脫模膜11的短邊方向中支承構件14的寬度、根數沒有特別限制，但將支承構件14的寬度的合計設為sD、將接著劑層12的直徑設為a
作為支承構件14的厚度，優選為與脫模膜11上的接著劑層12和粘合膜13的圓形標籤部13a的層疊部分與粘合膜13的周邊部13b的高差相當的厚度，即與接著劑層12相同，或者為接著劑層12以上，更優選為接著劑層12的1.0倍以上且4.0倍以下。通過使支承構件14具有接著劑層12的1.0倍以上的厚度，由此在卷取膠帶10時，粘合膜13與重疊在其表面的脫模膜11的第2面11b接觸、或者不接觸地在它們之間形成空間，因此脫模膜11的第2面11b不會隔著粘合膜13而較強地按壓於柔軟的接著劑層12。因此，能夠有效地抑制轉印痕跡的產生。另一方面，通過使支承構件14具有接著劑層的4.0倍以下的厚度，由此通過控制上述空間的大小，使空間變得過大，由此能夠防止變得容易導致空氣侵入到接著劑層12、粘合膜13、脫模膜11的各層間的狀態。圖2為示出比接著劑劑層12厚的支承構件14’的例子的剖視圖。 The thickness of the support member 14 is preferably a thickness corresponding to the height difference between the laminated portion of the adhesive layer 12 and the circular label portion 13 a of the adhesive film 13 on the release film 11 and the peripheral portion 13 b of the adhesive film 13. That is, it is the same as or more than the adhesive layer 12, and more preferably 1.0 times or more and 4.0 times or less the adhesive layer 12. When the supporting member 14 has a thickness of 1.0 times or more of the adhesive layer 12, the adhesive film 13 is in contact with or not in contact with the second surface 11 b of the release film 11 superimposed on the surface when the tape 10 is wound up. Since a space is formed between them, the second surface 11 b of the release film 11 is not strongly pressed against the soft adhesive layer 12 through the adhesive film 13. Therefore, generation of a transfer mark can be effectively suppressed. On the other hand, by making the support member 14 have a thickness of 4.0 times or less the adhesive layer, by controlling the size of the above-mentioned space, the space becomes excessively large, thereby preventing air from easily entering the adhesive layer 12. , The state between the layers of the adhesive film 13 and the release film 11. Fig. 2 is a cross-sectional view showing an example of a support member 14 'which is thicker than the adhesive agent layer 12;
支承構件14可以沿脫模膜11的長邊方向斷續或連續地設置，但從更有效地抑制轉印痕跡的產生的觀點出發，優選沿基材膜11的長邊方向連續地設置。 The support member 14 may be provided intermittently or continuously along the long-side direction of the release film 11, but it is preferably provided continuously along the long-side direction of the base film 11 from the viewpoint of more effectively suppressing generation of transfer marks.
本發明的支承構件14優選具有300ppm/℃以下的線性膨脹係數。晶圓加工用膠帶被置於溫度變化大的環境下，例如晶圓加工用膠帶在保存時、運送時以-20℃~5℃左右保持低溫狀態，另外在將晶圓加工用膠帶的接著劑層與晶圓粘合時，為了使接著劑加熱軟化從而提高接著性，用熱板進行70~80℃左右的加熱貼合等。支承構件14的尺寸根據溫度變化而發生變化時，有可能在脫模膜11與粘合膜13之間、以及接著劑層12與粘合膜13之間浸入空氣而產生孔隙，產生對晶圓的貼合不良，從而導致之後的晶圓的切割程序、膠帶的擴張程序以及晶片的拾取程序、安裝程序中成品率的下降。本發明中，通過使用300ppm/℃以下的線性膨脹係數低的支承構件，能夠充分地抑制接著劑層12上的轉印痕跡的產生，同時即使在溫度變化大的使用環境下，支承構件13的尺寸變化也少，能夠抑制孔隙的產生。 The support member 14 of the present invention preferably has a linear expansion coefficient of 300 ppm / ° C or lower. Wafer processing tape is placed in an environment with a large temperature change. For example, the wafer processing tape is kept at a low temperature of about -20 ° C to 5 ° C during storage and transportation, and the adhesive for the wafer processing tape is also used. When the layer is bonded to the wafer, in order to soften the adhesive by heating and improve the adhesiveness, heat bonding is performed at a temperature of about 70 to 80 ° C. using a hot plate. When the size of the support member 14 changes according to a change in temperature, air may be immersed in the space between the release film 11 and the adhesive film 13 and between the adhesive layer 12 and the adhesive film 13 to generate pores, and the wafer may be damaged. Poor bonding results in a decrease in the yield of subsequent wafer dicing procedures, tape expansion procedures, wafer picking procedures, and mounting procedures. In the present invention, by using a support member having a low linear expansion coefficient of 300 ppm / ° C. or less, it is possible to sufficiently suppress the occurrence of transfer marks on the adhesive layer 12, and at the same time, the support member 13 The dimensional change is small, and the generation of pores can be suppressed.
為了更有效地抑制轉印痕跡的產生和孔隙的產生，支承構件14的線性膨脹係數優選為150ppm/℃以下，更優選為70ppm/℃以下。線性膨脹係數的下限沒有特別限制，通常為0.1ppm/℃。 In order to more effectively suppress the generation of transfer marks and voids, the linear expansion coefficient of the support member 14 is preferably 150 ppm / ° C or lower, and more preferably 70 ppm / ° C or lower. The lower limit of the linear expansion coefficient is not particularly limited, and is usually 0.1 ppm / ° C.
另外，支承構件14的線性膨脹係數與脫模膜11的線性膨脹係數之差優選為250ppm/℃以下。線性膨脹係數之差大於250ppm/℃時，由於保存時和運送時的低溫狀態和使用時的常溫狀態的溫度變化而產生支承構件14與脫模膜11的尺寸差，因此存在以下的各種問題。 The difference between the linear expansion coefficient of the support member 14 and the linear expansion coefficient of the release film 11 is preferably 250 ppm / ° C or lower. When the difference between the linear expansion coefficients is more than 250 ppm / ° C., the difference in size between the support member 14 and the release film 11 occurs due to temperature changes in the low temperature state during storage and transportation, and the normal temperature state during use, and thus has the following various problems.
(1)由於溫度變化而產生尺寸差時，如上所述有可能在脫模膜11與粘合膜13之間、以及接著劑層12與粘合膜13之間產生孔隙。 (1) When a dimensional difference occurs due to a temperature change, as described above, voids may be generated between the release film 11 and the adhesive film 13 and between the adhesive layer 12 and the adhesive film 13.
(2)用戶以輥筒狀操作時，卷崩潰的可能性增加。更詳細地，例如即使在製造、出貨時正常地進行捲繞，用戶方面在從冷藏保存到常溫使用時、以及從常溫使用到冷藏保存時也產生尺寸差，卷崩潰的可能性增加。 (2) When a user operates in a roller shape, the possibility of a roll collapse increases. In more detail, for example, even if the winding is normally performed at the time of manufacturing and shipping, the user has a difference in size from refrigerated storage to normal temperature use, and from normal temperature use to refrigerated storage, and the possibility of roll collapse increases.
(3)由於尺寸差而在捲繞為輥筒狀的片間產生間隙，異物自輥筒側面混入的可能性增加。 (3) Due to the difference in size, a gap is generated between the sheets wound into a roll shape, and there is an increased possibility that foreign matter may enter from the side of the roll.
(4)在晶圓加工用膠帶的卷數多時、製品寬度寬時，在從常溫開始進行冷藏保存時，輥筒芯側與輥筒外周側的冷卻速度不同。因此，在輥筒芯側與輥筒外周側，線膨脹差所致的支承構件14與脫模膜11的尺寸差不同，整個輥筒的形狀發生變化的可能性高。 (4) When the number of rolls of the wafer processing tape is large and the product width is wide, when the refrigerator is stored from room temperature, the cooling speed of the roller core side and the roller outer peripheral side are different. Therefore, the size difference between the support member 14 and the release film 11 due to the linear expansion difference is different between the roll core side and the roll outer peripheral side, and there is a high possibility that the shape of the entire roll will change.
本發明中，線性膨脹係數是指在恒定壓力下改變溫度時物體的空間擴張所增加的比例。將溫度設為T、將該固體的長度設為L時，其線性膨脹係數α由以下的公式給出。 In the present invention, the coefficient of linear expansion refers to the ratio of an increase in the spatial expansion of an object when the temperature is changed under a constant pressure. When the temperature is T and the length of the solid is L, the linear expansion coefficient α is given by the following formula.
α=(1/L)．(
另外，本發明中的線性膨脹係數的測定例如可以按照JIS K7197、塑膠的熱機械分析的線膨脹率試驗方法，使用熱機械分析裝置(TMA)，安裝切斷為長度15mm、寬度5mm、卡盤間距離10mm的試樣，在拉伸載荷10g、升溫速度5℃/min、N2氣氣氛下、測定溫度範圍-20℃~50℃ 的條件下進行測定。 In addition, the measurement of the linear expansion coefficient in the present invention can be performed using a thermomechanical analysis device (TMA) in accordance with JIS K7197, a thermomechanical analysis method for plastics, and cutting to a length of 15mm, a width of 5mm, and a chuck A sample with a distance of 10 mm was measured under the conditions of a tensile load of 10 g, a heating rate of 5 ° C./min, and an N 2 gas atmosphere, and a measurement temperature range of −20 ° C. to 50 ° C.
另外，從防止晶圓加工用膠帶10的捲繞偏移的觀點出發，支承構件14優選相對於粘合膜13具有某種程度的摩擦係數的材質。由此，可得到如下的效果：能夠防止晶圓加工用膠帶10的捲繞偏移，進行高速卷取，能夠增大卷取數。 In addition, from the viewpoint of preventing the winding deviation of the wafer processing tape 10, the support member 14 is preferably a material having a certain degree of friction coefficient with respect to the adhesive film 13. As a result, it is possible to obtain an effect that the winding deviation of the wafer processing tape 10 can be prevented, high-speed winding can be performed, and the number of windings can be increased.
支承構件14與粘合膜13的基材膜之間的靜摩擦係數優選為0.2~2.0，更優選為0.6~1.6。將晶圓加工用膠帶卷取為輥筒狀時，在脫模膜11的第1面11a側設置的粘合膜13的周邊部13a與在脫模膜11的第2面11b側設置的支承構件14相接觸，因此，支承構件14與粘合膜13的基材膜之間的靜摩擦係數小於0.2時，在製造時、使用時變得容易產生捲繞偏移，從而操作性惡化。另一方面，大於2.0時，粘合膜13的基材膜與支承構件14之間的阻力過大，製造程序中的操作性惡化，或者在高速卷取時等導致彎曲行進。因此，通過將兩者間的靜摩擦係數設定為上述範圍，由此可得到如下的效果：能夠防止晶圓加工用膠帶10的捲繞偏移，能夠進行高速卷取，能夠增大卷取數。 The static friction coefficient between the support member 14 and the base film of the adhesive film 13 is preferably 0.2 to 2.0, and more preferably 0.6 to 1.6. When the wafer processing tape is wound into a roll shape, the peripheral portion 13 a of the adhesive film 13 provided on the first surface 11 a side of the release film 11 and the support provided on the second surface 11 b side of the release film 11 Since the member 14 is in contact with each other, if the static friction coefficient between the support member 14 and the base film of the adhesive film 13 is less than 0.2, winding deviation is likely to occur during manufacture and use, and operability is deteriorated. On the other hand, when it is larger than 2.0, the resistance between the base film of the adhesive film 13 and the support member 14 is too large, the operability in the manufacturing process is deteriorated, or bending progresses during high-speed winding or the like. Therefore, by setting the coefficient of static friction between the two to be in the above-mentioned range, the following effects can be obtained: the winding deviation of the wafer processing tape 10 can be prevented, high-speed winding can be performed, and the number of windings can be increased.
本發明中，支承構件14與粘合膜13的基材膜之間的靜摩擦係數可以基於JIS K7125，通過以下的測定方法得到。 In the present invention, the static friction coefficient between the support member 14 and the base film of the adhesive film 13 can be obtained by the following measurement method based on JIS K7125.
將分別切為25mm(寬度)×100mm(長度)的粘合膜13的基材膜與支承構件14的兩膜樣品重合，固定下側的 膜。接著，在層疊而成的膜的上方載置重量200g的重物，作為載荷W，以200mm/min的速度拉伸上側的膜，測定滑出時的力Fd(g)，從以下的公式求出靜摩擦係數(μd)。 The base film of the adhesive film 13 cut into 25 mm (width) x 100 mm (length) respectively and the two film samples of the support member 14 were overlapped, and the lower side was fixed. membrane. Next, a 200 g weight was placed on top of the laminated film, and the upper film was stretched at a speed of 200 mm / min as a load W, and the force Fd (g) at the time of sliding out was measured, and calculated from the following formula The coefficient of static friction (μd) is given.
μd=Fd/W μd = Fd / W
作為支承構件14，例如可以適當地使用在樹脂膜基材塗佈有粘接著劑的粘接著帶。通過將這樣的粘接著帶粘貼於脫模膜11的第2面11b的兩端部分的既定位置，由此能夠形成本實施方式的晶圓加工用膠帶10。 As the support member 14, for example, an adhesive tape in which a resin film base material is coated with an adhesive can be suitably used. By attaching such an adhesive tape to predetermined positions on both end portions of the second surface 11 b of the release film 11, the wafer processing tape 10 according to the present embodiment can be formed.
作為粘接著帶的基材樹脂，只要滿足上述線性膨脹係數的範圍、且能夠耐受卷壓，則沒有特別限定，但從耐熱性、平滑性和入手容易度的觀點出發，優選選自聚對苯二甲酸乙二醇酯(PET)、聚丙烯和高密度聚乙烯。 The base resin for the adhesive tape is not particularly limited as long as it satisfies the above-mentioned range of linear expansion coefficient and can withstand rolling pressure. From the viewpoints of heat resistance, smoothness, and ease of starting, it is preferably selected from polymer Polyethylene terephthalate (PET), polypropylene, and high-density polyethylene.
關於粘接著帶的粘合劑的組成和物性，沒有特別限定，只要在晶圓加工用膠帶10的卷取程序和保存程序中不從脫模膜11剝離即可。 The composition and physical properties of the adhesive to which the tape is adhered are not particularly limited, as long as they are not peeled from the release film 11 during the winding process and storage process of the wafer processing tape 10.
另外，作為支承構件14，可使用被著色的支承構件。通過使用這樣的著色支承構件，在將晶圓加工用膠帶卷取為輥筒狀時，能夠明確地識別帶的種類。例如，根據晶圓加工用膠帶的種類、厚度改變著色支承構件14的顏色，由此能夠容易地識別帶的種類、厚度，能夠抑制、防止產生人為的錯誤。 As the support member 14, a colored support member can be used. By using such a colored support member, when the wafer processing tape is wound into a roll shape, the type of the tape can be clearly identified. For example, by changing the color of the colored support member 14 according to the type and thickness of the wafer processing tape, the type and thickness of the tape can be easily identified, and human error can be suppressed and prevented.
另外，關於晶圓加工用膠帶10，23℃條件下 的粘合膜13的拉伸儲存彈性模量Eb與23℃條件下的脫模膜11的拉伸儲存彈性模量Ea之比優選在Eb/Ea0.001~100的範圍內。 In addition, regarding the wafer processing tape 10 at 23 ° C The ratio of the tensile storage elastic modulus Eb of the adhesive film 13 to the tensile storage elastic modulus Ea of the release film 11 at 23 ° C. is preferably in the range of Eb / Ea 0.001 to 100.
上述Eb/Ea的值越大，則相對地粘合膜13越硬、脫模膜11越柔軟。另一方面，上述Eb/Ea的值越小，則相對地粘合膜13越軟、脫模膜11越硬。根據上述構成，Eb/Ea為0.001以上，因此粘合膜的硬度(拉伸儲存彈性模量Eb)達到一定以上。因此，能夠抑制在構成晶圓加工用膠帶10的接著劑層12上產生轉印痕跡。另外，上述Eb/Ea為0.001以上，粘合膜13的硬度(拉伸儲存彈性模量Eb)達到一定以上，因此在貼合在半導體晶圓W上時，能夠適當地將粘合膜13與脫模膜11剝離(伸舌)。 The larger the value of Eb / Ea is, the harder the adhesive film 13 is and the softer the release film 11 is. On the other hand, the smaller the value of Eb / Ea, the softer the adhesive film 13 and the harder the release film 11 are. According to the above configuration, since Eb / Ea is 0.001 or more, the hardness (tensile storage elastic modulus Eb) of the adhesive film becomes a certain value or more. Therefore, it is possible to suppress the occurrence of transfer marks on the adhesive layer 12 constituting the wafer processing tape 10. In addition, the above Eb / Ea is 0.001 or more, and the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is more than a certain value. Therefore, when the adhesive film 13 is bonded to the semiconductor wafer W, the adhesive film 13 and the The release film 11 is peeled (tongue).
另外，上述Eb/Ea為100以下，因此脫模膜11的硬度(拉伸儲存彈性模量Ea)達到一定以上，另一方面，粘合膜13的硬度(拉伸儲存彈性模量Eb)為一定以下。因此，在接著劑層12向脫模膜11貼合時，能夠抑制脫模膜11產生折斷，能夠防止劃傷接著劑層12的表面、或者氣泡混入膜間。結果，能夠抑制脫模膜11的膜翹起、在半導體晶圓W的安裝時在接著劑層12與半導體晶圓W之間產生孔隙。 In addition, since the Eb / Ea is 100 or less, the hardness (tensile storage elastic modulus Ea) of the release film 11 becomes a certain value or more. On the other hand, the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is It must be the following. Therefore, when the adhesive layer 12 is bonded to the release film 11, breakage of the release film 11 can be suppressed, and the surface of the adhesive layer 12 can be prevented from being scratched or air bubbles can be mixed between the films. As a result, the film lift-off of the release film 11 can be suppressed, and voids can be generated between the adhesive layer 12 and the semiconductor wafer W when the semiconductor wafer W is mounted.
可見，根據上述構成，在卷取為輥筒狀時能夠抑制在接著劑層12產生轉印痕跡。另外，能夠抑制脫模膜11的膜翹起、在半導體晶圓W的安裝時在接著劑層 12與半導體晶圓W之間產生孔隙。 It can be seen that according to the above configuration, it is possible to suppress the occurrence of a transfer mark in the adhesive layer 12 when being wound into a roll shape. In addition, it is possible to suppress the film warping of the release film 11 and to prevent the film from being stuck on the adhesive layer during the mounting of the semiconductor wafer W. A void is generated between 12 and the semiconductor wafer W.
上述構成中，脫模膜11的厚度優選為10~100μm，粘合膜13的厚度優選為25~180μm。 In the above configuration, the thickness of the release film 11 is preferably 10 to 100 μm, and the thickness of the adhesive film 13 is preferably 25 to 180 μm.
另外，上述構成中，23℃條件下的粘合膜13的拉伸儲存彈性模量Eb優選為1~500MPa，23℃條件下的脫模膜11的拉伸儲存彈性模量Ea優選為1~5000MPa。 In the above configuration, the tensile storage elastic modulus Eb of the adhesive film 13 at 23 ° C is preferably 1 to 500 MPa, and the tensile storage elastic modulus Ea of the release film 11 at 23 ° C is preferably 1 to 500. 5000MPa.
另外，上述構成中優選：接著劑層12的玻璃化轉變溫度在0~100℃的範圍內，且固化前23℃條件下的拉伸儲存彈性模量為50MPa~5000MPa的範圍。通過使接著劑層12的玻璃化轉變溫度為0℃以上，由此能夠抑制B階段狀態下的接著劑層12的粘性增大，能夠維持良好的操作性。另外，在切割時，能夠防止一部分接著劑層12發生熔融而使粘合劑附著於半導體晶片。結果，能夠維持半導體晶片的良好的拾取性。另一方面，通過使玻璃化轉變溫度為100℃以下，由此能夠防止接著劑層12的流動性的下降。另外，也能夠維持與半導體晶圓W的良好的接著性。此外，接著劑層12為熱固化型時，接著劑層12的玻璃化轉變溫度是指熱固化前的玻璃化轉變溫度。另外，通過使接著劑層12的固化前23℃條件下的拉伸儲存彈性模量為50MPa以上，由此在切割時，能夠防止一部分接著劑層12發生熔融而使粘合劑附著於半導體晶片。另一方面，通過使拉伸儲存彈性模量為5000MPa以下，由此也能夠維持與半導體晶圓W、基板的良好的接著性。 In the above configuration, the glass transition temperature of the adhesive layer 12 is preferably in a range of 0 to 100 ° C, and the tensile storage elastic modulus at 23 ° C before curing is in a range of 50 MPa to 5000 MPa. By setting the glass transition temperature of the adhesive layer 12 to 0 ° C. or higher, it is possible to suppress an increase in the viscosity of the adhesive layer 12 in the B-stage state, and it is possible to maintain good operability. In addition, at the time of dicing, it is possible to prevent a part of the adhesive layer 12 from melting and causing the adhesive to adhere to the semiconductor wafer. As a result, it is possible to maintain a good pickup property of the semiconductor wafer. On the other hand, when the glass transition temperature is 100 ° C. or lower, a decrease in the fluidity of the adhesive layer 12 can be prevented. In addition, it is also possible to maintain good adhesion to the semiconductor wafer W. In addition, when the adhesive layer 12 is a thermosetting type, the glass transition temperature of the adhesive layer 12 means the glass transition temperature before thermal curing. In addition, by setting the tensile storage elastic modulus at 23 ° C. before curing of the adhesive layer 12 to be 50 MPa or more, it is possible to prevent a part of the adhesive layer 12 from melting during dicing to attach the adhesive to the semiconductor wafer. . On the other hand, by setting the tensile storage elastic modulus to 5,000 MPa or less, it is also possible to maintain good adhesion to the semiconductor wafer W and the substrate.
另外，將脫模膜11的厚度設為Ta、將粘合膜 13的厚度設為Tb時，晶圓加工用膠帶10的Ta/Tb優選在0.07~2.5的範圍內。 In addition, the thickness of the release film 11 is set to Ta, and the adhesive film is set to When the thickness of 13 is Tb, the Ta / Tb of the wafer processing tape 10 is preferably in the range of 0.07 to 2.5.
關於上述Ta/Tb，例如，使脫模膜11的厚度Ta一定時，其值越小，則粘合膜13越厚。根據上述構成，Ta/Tb為0.07以上，因此層疊有粘合膜13的部分與未層疊粘合膜13的部分的高差為一定以下。因此，能夠抑制轉印痕跡的產生。另外，上述Ta/Tb為0.07以上、粘合膜13的厚度厚於脫模膜11的厚度，因此通過脫模膜11的厚度能夠吸收應力，能夠抑制轉印痕跡的產生。另外，上述Ta/Tb為0.07以上、粘合膜13的厚度厚於脫模膜11的厚度，因此在貼合在半導體晶圓W上時，能夠適當地將粘合膜13與脫模膜11剝離(伸舌)。另外，關於上述Ta/Tb，例如使粘合膜13的厚度Tb一定時，其值越小，則脫模膜11的厚度越薄。上述Ta/Tb為2.5以下，因此脫模膜11的厚度為一定以下。因此，對層疊有粘合膜13的部分與未層疊粘合膜13的部分的高差的追隨性良好。另外，上述Ta/Tb為2.5以下、脫模膜11的厚度為一定以下，因此能夠使將粘合膜13層壓於脫模膜時的壓力變得均勻，能夠防止氣泡的混入。可見，根據上述構成，將在粘合膜13上依次層疊接著劑層12和脫模膜11而成的晶圓加工用膠帶10卷取為輥筒狀時，能夠抑制在接著劑層12產生轉印痕跡。 Regarding the above Ta / Tb, for example, when the thickness Ta of the release film 11 is made constant, the smaller the value is, the thicker the adhesive film 13 is. According to the above configuration, since Ta / Tb is 0.07 or more, the difference in height between the portion where the adhesive film 13 is laminated and the portion where the adhesive film 13 is not laminated is constant or less. Therefore, generation of a transfer mark can be suppressed. In addition, since the Ta / Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than the thickness of the release film 11, the thickness of the release film 11 can absorb stress and suppress the occurrence of transfer marks. In addition, since the Ta / Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than the thickness of the release film 11, the adhesive film 13 and the release film 11 can be appropriately bonded to the semiconductor wafer W. Peel (stick out). In addition, regarding the above Ta / Tb, for example, when the thickness Tb of the adhesive film 13 is made constant, the smaller the value is, the thinner the thickness of the release film 11 is. Since the Ta / Tb is 2.5 or less, the thickness of the release film 11 is constant or less. Therefore, the followability to the difference in height between the portion where the adhesive film 13 is laminated and the portion where the adhesive film 13 is not laminated is good. In addition, since the Ta / Tb is 2.5 or less and the thickness of the release film 11 is constant or less, the pressure when the adhesive film 13 is laminated on the release film can be made uniform, and the incorporation of air bubbles can be prevented. It can be seen that according to the above configuration, when the wafer processing tape 10 in which the adhesive layer 12 and the release film 11 are sequentially laminated on the adhesive film 13 is rolled into a roll shape, it is possible to suppress the occurrence of rotation in the adhesive layer 12. Printed traces.
上述構成中，溫度23±2℃、剝離速度300mm/min的條件下的T型剝離試驗中，優選：接著劑層12與 脫模膜11之間的剝離力F1在0.025~0.075N/100mm的範圍內，接著劑層12與粘合膜13之間的剝離力F2在0.08~10N/100mm的範圍內，上述F1和上述F2滿足F1<F2的關係。 In the above configuration, in a T-type peeling test under conditions of a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min, it is preferable that the adhesive layer 12 and The peeling force F1 between the release films 11 is in a range of 0.025 to 0.075N / 100mm, and the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is in a range of 0.08 to 10N / 100mm. The above-mentioned F1 and the above-mentioned F2 satisfies the relationship of F1 <F2.
從防止產生鬆弛、卷取偏移、位置偏移、孔隙(氣泡)等的觀點出發，在對粘合膜13、接著劑層12、脫模膜11施加拉伸張力的同時來製造晶圓加工用膠帶10。結果，晶圓加工用膠帶10在構成其的任一膜中存在拉伸殘餘應變的狀態下被製造。該拉伸殘餘應變例如在-30~10℃的低溫狀態下運送或者長時間保存時，在各膜中引起收縮。另外，各膜的物性不同，因此收縮的程度也不同。例如，在各膜中，粘合膜13的收縮程度最大，脫模膜11的收縮程度最小。結果，在粘合膜13與接著劑層12之間產生介面剝離，或者引起脫模膜11的膜翹起現象。 From the viewpoint of preventing slack, winding offset, positional displacement, voids (bubbles), etc., the wafer processing is performed while applying tensile tension to the adhesive film 13, the adhesive layer 12, and the release film 11. With adhesive tape 10. As a result, the wafer processing tape 10 is manufactured in a state where there is a tensile residual strain in any of the films constituting it. This tensile residual strain causes shrinkage in each film when it is transported in a low temperature state of -30 to 10 ° C or stored for a long time, for example. In addition, since the physical properties of each film are different, the degree of shrinkage is also different. For example, among the films, the degree of shrinkage of the adhesive film 13 is the largest, and the degree of shrinkage of the release film 11 is the smallest. As a result, interface peeling occurs between the adhesive film 13 and the adhesive layer 12, or a film lift-up phenomenon of the release film 11 is caused.
上述構成為在使接著劑層12與脫模膜11之間的剝離力F1為0.025~0.075N/100mm的範圍、且使接著劑層12與粘合膜13之間的剝離力F2為0.08~10N/100mm的範圍內的基礎上滿足F1<F2的關係的構成。如上所述，各膜中的收縮中，粘合膜最大，因此通過使接著劑層12與粘合膜13之間的剝離力F2大於接著劑層12與脫模膜11之間的剝離力F1，由此能夠抑制收縮率最大的粘合膜13的收縮，防止粘合膜13與接著劑層12之間的介面剝離、脫模膜11的膜翹起現象。另外，也能夠防 止一部分或全部接著劑層12轉印至脫模膜11。 The above configuration is such that the peel force F1 between the adhesive layer 12 and the release film 11 is in a range of 0.025 to 0.075 N / 100 mm, and the peel force F2 between the adhesive layer 12 and the adhesive film 13 is 0.08 to A structure that satisfies the relationship of F1 <F2 on the basis of 10N / 100mm. As described above, since the adhesive film has the largest shrinkage among the films, the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is made larger than the peeling force F1 between the adhesive layer 12 and the release film 11. As a result, it is possible to suppress the shrinkage of the adhesive film 13 having the largest shrinkage, prevent the interface peeling between the adhesive film 13 and the adhesive layer 12, and prevent the film of the release film 11 from lifting. In addition, it can also prevent Only part or all of the adhesive layer 12 is transferred to the release film 11.
接著，說明本發明的實施例，但本發明並不限於這些實施例。 Next, examples of the present invention will be described, but the present invention is not limited to these examples.
準備以下所示的脫模膜。 Prepare the release film shown below.
脫模膜A1：厚度25μm、寬度390mm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為4070MPa，線性膨脹係數為60ppm) Release film A1: Polyethylene terephthalate film after silicone release treatment with a thickness of 25 μm and a width of 390 mm (tensile storage elastic modulus is 4070 MPa, linear expansion coefficient is 60 ppm)
脫模膜A2：厚度100μm、寬度390mm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為3910MPa，線性膨脹係數為60ppm) Release film A2: Polyethylene terephthalate film after silicone release treatment with a thickness of 100 μm and a width of 390 mm (tensile storage elastic modulus is 3910 MPa and linear expansion coefficient is 60 ppm)
脫模膜A3：厚度12μm、寬度390mm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為4020MPa，線性膨脹係數為60ppm) Release film A3: Polyethylene terephthalate film after silicone release treatment with a thickness of 12 μm and a width of 390 mm (tensile storage elastic modulus is 4020 MPa and linear expansion coefficient is 60 ppm)
脫模膜A4：厚度38μm、寬度390mm的矽酮脫模處理後的聚對苯二甲酸乙二醇酯膜(拉伸儲存彈性模量為4020MPa，線性膨脹係數為60ppm) Release film A4: Polyethylene terephthalate film after silicone release treatment with a thickness of 38 μm and a width of 390 mm (tensile storage elastic modulus is 4020 MPa and linear expansion coefficient is 60 ppm)
脫模膜A5：厚度25μm、寬度390mm的矽酮脫模處理後的低密度聚乙烯(LDPE)膜(拉伸儲存彈性模量為105MPa，線性膨脹係數為230ppm) Release film A5: low-density polyethylene (LDPE) film after silicone release treatment with a thickness of 25 μm and a width of 390 mm (the tensile storage elastic modulus is 105 MPa and the linear expansion coefficient is 230 ppm)
作為具有官能團的丙烯酸系共聚物，製備包含丙烯酸2-乙基己酯、丙烯酸2-羥基乙酯和甲基丙烯酸、丙烯酸2-乙基己酯的比率為60摩爾%、質均分子量70萬的共聚物。接著，添加甲基丙烯酸2-異氰酸根合乙酯使得碘值達到20，製備玻璃化轉變溫度-50℃、羥基值10mgKOH/g、酸值5mgKOH/g的丙烯酸系共聚物(b-1)。 As an acrylic copolymer having a functional group, a mixture containing 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and 2-ethylhexyl acrylate having a mass average molecular weight of 700,000 was prepared. Copolymer. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value reached 20, and an acrylic copolymer (b-1) having a glass transition temperature of -50 ° C, a hydroxyl value of 10 mgKOH / g, and an acid value of 5 mgKOH / g was prepared. .
相對於丙烯酸系共聚物(b-1)100質量份，加入作為聚異氰酸酯的Coronate L(日本聚氨酯製)5質量份，加入作為光聚合引發劑的Esacure KIP 150(Lamberti公司製)3質量份，將所得混合物溶解於乙酸乙酯，攪拌，製備粘合劑組合物。 Based on 100 parts by mass of the acrylic copolymer (b-1), 5 parts by mass of Coronate L (manufactured by Japan Polyurethane) was added as a polyisocyanate, and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti) was added as a photopolymerization initiator. The obtained mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition.
接著，在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷該粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-乙酸乙烯酯共聚物(東曹製，Ultrathene636)的基材膜(厚度50μm)貼合，製作厚度60μm的粘合膜B1。拉伸儲存彈性模量為40MPa。 Next, the adhesive composition was coated on a release liner including a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C. for 3 minutes, A base film (thickness: 50 μm) of an ethylene-vinyl acetate copolymer (manufactured by Tosoh, Ultrathene636) was laminated to produce an adhesive film B1 having a thickness of 60 μm. The tensile storage elastic modulus is 40 MPa.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為5μm，在110℃乾燥3分鐘後，與包含低密度聚乙烯 (LDPE，未經脫模處理)的基材膜(厚度40μm)貼合，製作厚度45μm的粘合膜B2。拉伸儲存彈性模量為105MPa。 The above-mentioned adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 5 μm. After drying at 110 ° C. for 3 minutes, Polyethylene A base film (thickness: 40 μm) (LDPE, without release treatment) was bonded to form an adhesive film B2 having a thickness of 45 μm. The tensile storage elastic modulus was 105 MPa.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-甲基丙烯酸類共聚物的離聚物(三井杜邦聚合化學製，HIMILAN1554)的基材膜(厚度150μm)貼合，製作厚度160μm的粘合膜B3。拉伸儲存彈性模量為301MPa。 The above adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C. for 3 minutes, A base film (thickness: 150 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was bonded to produce an adhesive film B3 having a thickness of 160 μm. The tensile storage elastic modulus was 301 MPa.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-甲基丙烯酸類共聚物的離聚物(三井杜邦聚合化學製，HIMILAN1554)的基材膜(厚度110μm)貼合，製作厚度120μm的粘合膜B4。拉伸儲存彈性模量為289MPa。 The above adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C. for 3 minutes, A base film (thickness: 110 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was laminated to prepare an adhesive film B4 having a thickness of 120 μm. The tensile storage elastic modulus was 289 MPa.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為10μm，在110℃乾燥3分鐘後，與包含乙烯-丙烯嵌段共 聚物(Prime Polymer製，Prime Polypro F707W)的基材膜(厚度110μm)貼合，製作厚度120μm的粘合膜B5。拉伸儲存彈性模量為980MPa。 The above adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C. for 3 minutes, Propylene block copolymer A base film (thickness: 110 μm) of a polymer (manufactured by Prime Polymer, Prime Polypro F707W) was laminated to produce an adhesive film B5 having a thickness of 120 μm. The tensile storage elastic modulus was 980 MPa.
在包含環氧樹脂「YX4000」(三菱化學製，聯苯線性酚醛型環氧樹脂、環氧當量185)15.0質量份、酚醛樹脂「LF-6161」(DIC製，線性酚醛型酚醛樹脂、羥基當量118)40.0質量份、環氧樹脂「Epicoat 828」(三菱化學製，雙酚A型環氧樹脂、環氧當量190)45.0重量份、作為二氧化矽填料的「Aerosil R972」(日本Aerosil製，一次粒徑的平均粒徑0.016μm)5質量份的組合物中加入MEK，攪拌混合，得到均勻的組合物。 15.0 parts by mass of epoxy resin "YX4000" (manufactured by Mitsubishi Chemical, biphenyl novolac epoxy resin, epoxy equivalent 185), phenol resin "LF-6161" (made by DIC, novolac resin, hydroxyl equivalent) 118) 40.0 parts by mass, epoxy resin "Epicoat 828" (manufactured by Mitsubishi Chemical, bisphenol A epoxy resin, epoxy equivalent weight 190), 45.0 parts by weight, "Aerosil R972" (manufactured by Japan Aerosil, MEK was added to 5 parts by mass of the composition of the primary particle size (average particle size: 0.016 μm), and the mixture was stirred and mixed to obtain a uniform composition.
向其中加入作為含有官能團的聚合物的含有來自丙烯酸縮水甘油基酯或甲基丙烯酸縮水甘油基酯的單體單元的丙烯酸類共聚物(重均分子量85萬，Tg20℃)66.7質量份、作為偶聯劑的「KBM-802」(信越矽酮製，巰基丙基三甲氧基矽烷)0.6質量份、以及作為固化促進劑的「Curezol 2PHZ-PW」(四國化成製，2-苯基-4,5-二羥基甲基咪唑，分解溫度230℃)0.1質量份，攪拌混合直至均勻。然後用100目篩檢程式過濾所得物，並進行真空脫泡，由此得到接著劑組合物的清漆(c-1)。 66.7 parts by mass of an acrylic copolymer (weight-average molecular weight 850,000, Tg 20 ° C) containing a monomer unit derived from glycidyl acrylate or glycidyl methacrylate as a functional group-containing polymer was added thereto as a coupling agent. 0.6 parts by mass of "KBM-802" (made by Shin-Etsu Silicone, mercaptopropyltrimethoxysilane) and "Curezol 2PHZ-PW" (manufactured by Shikoku Chemical Co., Ltd., 2-phenyl-4) as a curing accelerator , 5-dihydroxymethylimidazole, decomposition temperature: 230 ° C.) 0.1 parts by mass, and stirred and mixed until uniform. Then, the resultant was filtered with a 100-mesh sieve and vacuum defoamed, thereby obtaining a varnish (c-1) of the adhesive composition.
用塗佈器將該清漆(c-1)塗敷在脫模膜A1 上，使得乾燥膜厚為30μm，在120℃乾燥5分鐘，製作厚度30μm的接著劑層C1。 Apply this varnish (c-1) to release film A1 with an applicator Then, the thickness of the dried film was 30 μm, and it was dried at 120 ° C. for 5 minutes to prepare an adhesive layer C1 having a thickness of 30 μm.
用塗佈器將清漆(c-1)塗敷在脫模膜A2上，使得乾燥膜厚為30μm，在120℃乾燥5分鐘，製作厚度30μm的接著劑層C2。 The varnish (c-1) was applied on a release film A2 with an applicator so that the dry film thickness was 30 μm, and it was dried at 120 ° C. for 5 minutes to prepare an adhesive layer C2 with a thickness of 30 μm.
用塗佈器將清漆(c-1)塗敷在脫模膜A1上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C3。之後，將接著劑層C3從脫模膜A1轉印至脫模膜A3。 The varnish (c-1) was coated on the release film A1 with an applicator so that the dry film thickness was 60 μm, and it was dried at 120 ° C. for 8 minutes to prepare an adhesive layer C3 with a thickness of 60 μm. After that, the adhesive layer C3 is transferred from the release film A1 to the release film A3.
用塗佈器將清漆(c-1)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，準備2片這樣得到的膜，將它們在70℃進行層疊，由此製作厚度120μm的接著劑層C4，剝離一個脫模膜A4。 The varnish (c-1) was applied on a release film A4 with an applicator so that the dry film thickness was 60 μm, and it was dried at 120 ° C. for 8 minutes. Two films thus obtained were prepared, and they were laminated at 70 ° C. Thus, an adhesive layer C4 having a thickness of 120 μm was produced, and one release film A4 was peeled off.
用塗佈器將清漆(c-1)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C5。 The varnish (c-1) was applied on a release film A4 with an applicator so that the dry film thickness was 60 μm, and it was dried at 120 ° C. for 8 minutes to prepare an adhesive layer C5 with a thickness of 60 μm.
用塗佈器將清漆(c-1)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C6。之後，從脫模膜A4進行轉印，得到脫模膜A5與接著劑層C6的組合。 The varnish (c-1) was applied on a release film A4 with an applicator so that the dry film thickness was 60 μm, and it was dried at 120 ° C. for 8 minutes to produce an adhesive layer C6 with a thickness of 60 μm. Thereafter, transfer is performed from the release film A4 to obtain a combination of the release film A5 and the adhesive layer C6.
用塗佈器將清漆(c-1)塗敷在脫模基材A1上，使得乾燥膜厚為30μm，在120℃乾燥5分鐘，製作厚度20μm的接著劑層C7。 The varnish (c-1) was coated on the release substrate A1 with a coater so that the dry film thickness was 30 μm, and it was dried at 120 ° C. for 5 minutes to prepare an adhesive layer C7 with a thickness of 20 μm.
在包含環氧樹脂「1002」(三菱化學製，固形雙酚A型環氧樹脂、環氧當量600)40質量份、環氧樹脂「806」(三菱化學製，雙酚F型環氧樹脂、環氧當量160，比重1.20)100質量份、固化劑「Dyhard100SF」(DEGUSSA製，雙氰胺)5質量份、二氧化矽填料「SO-C2」(ADMAFINE製，平均粒徑0.5μm)200質量份、和作為二氧化矽填料的「Aerosil R972」(日本Aerosil製，一次粒徑的平均粒徑0.016μm)3質量份的組合物中加入MEK，攪拌混合，得到均勻的組合物。 It contains 40 parts by mass of epoxy resin "1002" (manufactured by Mitsubishi Chemical, solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin "806" (manufactured by Mitsubishi Chemical, bisphenol F type epoxy resin, Epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, curing agent "Dyhard100SF" (manufactured by DEGUSSA, dicyandiamide) 5 parts by mass, silicon dioxide filler "SO-C2" (manufactured by ADMAFINE, average particle size 0.5 μm) 200 parts by mass MEK was added to 3 parts by mass of a composition of "Aerosil R972" (manufactured by Aerosil, Japan, with an average primary particle size of 0.016 μm) as a silica filler, and the mixture was stirred and mixed to obtain a uniform composition.
在其中加入苯氧基樹脂「PKHC」(INCHEM製，質均分子量43,000，玻璃化轉變溫度89℃)100質量份、作 為偶聯劑的「KBM-802」(信越矽酮製，巰基丙基三甲氧基矽烷)0.6質量份、以及作為固化促進劑的「Curezol 2PHZ-PW」(四國化成製，2-苯基-4,5-二羥基甲基咪唑，分解溫度230℃)0.5質量份，攪拌混合直至均勻。然後用100目篩檢程式過濾所得物，並進行真空脫泡，由此得到接著劑組合物的清漆(c-2)。 100 parts by mass of a phenoxy resin "PKHC" (manufactured by INCHEM, with a mass average molecular weight of 43,000 and a glass transition temperature of 89 ° C) was added. 0.6 parts by mass of "KBM-802" (Mercaptopropyltrimethoxysilane produced by Shin-Etsu Silicone) as a coupling agent, and "Curezol 2PHZ-PW" (manufactured by Shikoku Chemical Co., Ltd., 2-phenyl) as a curing accelerator -4,5-dihydroxymethylimidazole (decomposition temperature: 230 ° C) 0.5 parts by mass, stir and mix until uniform. The resultant was then filtered with a 100-mesh sieve and vacuum defoamed to obtain a varnish (c-2) of the adhesive composition.
用塗佈器將該清漆(c-2)塗敷在脫模膜A4上，使得乾燥膜厚為60μm，在120℃乾燥8分鐘，製作厚度60μm的接著劑層C8。 This varnish (c-2) was applied on a release film A4 with an applicator so that the dry film thickness was 60 μm, and it was dried at 120 ° C. for 8 minutes to produce an adhesive layer C8 with a thickness of 60 μm.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為5μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的樹脂膜基材(厚度25μm)貼合併進行轉印，製作厚度30μm、寬度36mm的支承構件D1。線性膨脹係數為60ppm。 The above adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 5 μm, and after drying at 110 ° C. for 3 minutes, A resin film base material (thickness: 25 μm) of ethylene phthalate (without mold release treatment) was attached and transferred to produce a support member D1 having a thickness of 30 μm and a width of 36 mm. The coefficient of linear expansion is 60 ppm.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚丙烯(OPP，無脫模處理)的樹脂膜基材(厚度50μm)貼合併進行轉 印，製作厚度75μm、寬度36mm的支承構件D2。線性膨脹係數為120ppm。 The above-mentioned adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm. After drying at 110 ° C. for 3 minutes, (OPP, no release treatment) resin film substrate (thickness: 50 μm) Then, a support member D2 having a thickness of 75 μm and a width of 36 mm was produced. The coefficient of linear expansion was 120 ppm.
將作為無塵室用的市售的無塵生產線膠帶的TW-PLT(TANIMURA製)切開為寬度36mm，作為支承構件D3使用。具有厚度75μm的聚氯乙烯層與厚度12μm的聚對苯二甲酸乙二醇酯層層疊而成的樹脂膜基材，總厚142μm，線性膨脹係數為80ppm。 TW-PLT (manufactured by Tanimura), which is a commercially available clean room production line tape for clean rooms, was cut into a width of 36 mm and used as a support member D3. A resin film substrate having a polyvinyl chloride layer having a thickness of 75 μm and a polyethylene terephthalate layer having a thickness of 12 μm. The resin film substrate has a total thickness of 142 μm and a linear expansion coefficient of 80 ppm.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含低密度聚乙烯(LDPE，未經脫模處理)的樹脂膜基材(厚度50μm)貼合併轉印，製作厚度75μm、寬度36mm的支承構件D4。線性膨脹係數為230ppm。 The adhesive composition was coated on a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C. for 3 minutes, A polyethylene (LDPE, unreleased) resin film substrate (thickness: 50 μm) was affixed and transferred to form a support member D4 having a thickness of 75 μm and a width of 36 mm. The coefficient of linear expansion was 230 ppm.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的樹脂膜基材(厚度50μm)貼合併轉印，製作厚度75μm、寬度44mm的支承構件D5。線性 膨脹係數為60ppm。 The above-mentioned adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm. After drying at 110 ° C. for 3 minutes, A resin film substrate (thickness: 50 μm) of ethylene phthalate (without mold release treatment) was attached and transferred to produce a support member D5 having a thickness of 75 μm and a width of 44 mm. Linear The expansion coefficient was 60 ppm.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的基材膜(厚度50μm)貼合併轉印，製作厚度75μm、寬度40mm的支承構件D6。線性膨脹係數為60ppm。 The above-mentioned adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm. After drying at 110 ° C. for 3 minutes, A base film (thickness: 50 μm) of ethylene phthalate (without mold release treatment) was attached and transferred to produce a support member D6 having a thickness of 75 μm and a width of 40 mm. The coefficient of linear expansion is 60 ppm.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的樹脂膜基材(厚度75μm)貼合併轉印，製作厚度100μm、寬度40mm的支承構件D7。線性膨脹係數為60ppm。 The above-mentioned adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm. After drying at 110 ° C. for 3 minutes, A resin film substrate (thickness: 75 μm) of ethylene phthalate (without mold release treatment) was attached and transferred to prepare a support member D7 having a thickness of 100 μm and a width of 40 mm. The coefficient of linear expansion is 60 ppm.
在脫模處理後的包含聚對苯二甲酸乙二醇酯膜的剝離襯墊上塗敷上述粘合劑組合物，使得乾燥後的厚度為25μm，在110℃乾燥3分鐘後，與包含聚對苯二甲酸乙二醇酯(無脫模處理)的樹脂膜基材(厚度75μm)貼合併轉印，製作厚度100μm、寬度35mm的支承構件D8。線 性膨脹係數為60ppm。 The above-mentioned adhesive composition was applied to a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm. After drying at 110 ° C. for 3 minutes, A resin film substrate (thickness: 75 μm) of ethylene phthalate (without mold release treatment) was attached and transferred to produce a support member D8 having a thickness of 100 μm and a width of 35 mm. line The coefficient of sexual expansion is 60 ppm.
將冷藏保存的形成在脫模膜A1上接著劑層C1恢復常溫，對接著劑層C1以達到脫模膜A1的厚度的1/2以下的切入深度的方式進行調整後，進行直徑320mm的圓形預切割加工。之後，除去接著劑層C1的不需要部分，將粘合膜B1以使其粘合劑層與接著劑層接觸的方式在室溫下與脫模膜A1層壓。然後，對粘合膜B1以達到脫模膜A1的厚度的1/2以下的切入深度的方式進行調節後，以與接著劑層C1呈同心圓狀進行直徑370mm的圓形預切割加工，以15N的張力卷取300片。接著，在脫模膜A1上的與設置有接著劑層C1和粘合膜B1的面相反的面、且在脫模膜A1的短邊方向的兩端部貼合支承構件D1，製作實施例1的晶圓加工用膠帶。以如下方式進行設置：將脫模膜的短邊方向中支承構件的寬度的合計設為sD、將接著劑層的直徑設為a
按照與實施例1同樣的方法，以表1的組合製作實施例2~8和比較例1的晶圓加工用膠帶。此外，支承構件到達脫模膜的短邊方向中與接著劑層的端部對應的區域的量 作為重合A(mm)記載於表2。 In the same manner as in Example 1, the tapes for wafer processing of Examples 2 to 8 and Comparative Example 1 were produced in a combination of Table 1. In addition, the amount by which the support member reaches the region corresponding to the end portion of the adhesive layer in the short-side direction of the release film It is described in Table 2 as the overlap A (mm).
將實施例和比較例的晶圓加工用膠帶收納於聚乙烯製的袋，脫氣後進行熱密封，將聚丙烯製的側板安裝於兩端部。然後，以成為十字的方式綁上2根PP帶並進行熔融接合。之後，將各包裝體在冰箱內(5℃)保存1個月後，從冰箱取出，與板狀的乾冰一起收納於包裝箱，載置於運送用卡車，往返平塚~秋田之間(約1000km)。此時，包裝箱的最低溫度為-43℃，最高溫度為7℃。之後，打開各包裝體，將捲筒恢復至常溫後打開包裝袋，解開輥筒，目視觀察空氣向接著劑層與脫模膜之間的侵入的有無，和MD、TD各方向上轉印痕跡的有無。其結果如表2所示。 The wafer processing tapes of Examples and Comparative Examples were stored in a polyethylene bag, degassed, and heat-sealed, and polypropylene side plates were attached to both ends. Then, two PP tapes were tied so as to become a cross, and fusion-bonded. After that, each package was stored in a refrigerator (5 ° C) for one month, then taken out of the refrigerator, stored in a packing box with plate-shaped dry ice, placed in a transport truck, and transported between Hiratsuka to Akita (about 1000km) ). At this time, the minimum temperature of the packaging box is -43 ° C, and the maximum temperature is 7 ° C. After that, open each package, return the roll to normal temperature, and then open the packaging bag. Unroll the roll, and visually observe the presence or absence of air intrusion between the adhesive layer and the release film, and transfer to the MD and TD sides. The presence or absence of traces. The results are shown in Table 2.
將實施例和比較例的粘接片收納於聚乙烯製的袋，脫氣後進行熱密封，將聚丙烯製的側板安裝於兩端部。然後，以成為十字的方式綁上2根PP帶並進行熔融接合。之後，將各包裝體在冰箱內(5℃)保存1個月後，從冰箱取出，與板狀的乾冰一起收納於包裝箱，載置於運送用卡車，往返平塚~秋田之間(約1000km)。此時，包裝箱的最低溫度為-43℃，最高溫度為7℃。之後，打開各包裝體，將捲筒恢復至常溫後打開包裝袋，安裝至半導體晶圓。作為半導體晶圓，使用大小為12英寸、厚度50μm 的晶圓。半導體晶圓的安裝條件如下所述。 The adhesive sheets of the examples and comparative examples were stored in a polyethylene bag, degassed, and then heat-sealed, and polypropylene side plates were attached to both ends. Then, two PP tapes were tied so as to become a cross, and fusion-bonded. After that, each package was stored in a refrigerator (5 ° C) for one month, then taken out of the refrigerator, stored in a packing box with plate-shaped dry ice, placed in a transport truck, and transported between Hiratsuka to Akita (about 1000km) ). At this time, the minimum temperature of the packaging box is -43 ° C, and the maximum temperature is 7 ° C. After that, each package is opened, the roll is returned to normal temperature, and then the packaging bag is opened and mounted on the semiconductor wafer. As a semiconductor wafer, a size of 12 inches and a thickness of 50 μm is used Wafer. The mounting conditions of a semiconductor wafer are as follows.
粘貼裝置：晶圓貼裝機DAM-812M(Takatori製) Pasting device: Wafer mounting machine DAM-812M (manufactured by Takatori)
粘貼速度計：50mm/sec Pasting speed meter: 50mm / sec
粘貼壓力：0.1MPa Pasting pressure: 0.1MPa
粘貼溫度：60℃、90℃ Pasting temperature: 60 ℃, 90 ℃
之後，通過顯微鏡確認晶圓加工用膠帶與半導體晶圓的貼合面有無孔隙(氣泡)。其結果如表2所示。 Thereafter, the presence or absence of voids (air bubbles) on the bonding surface of the wafer processing tape and the semiconductor wafer was confirmed with a microscope. The results are shown in Table 2.
如表2所示，實施例所涉及的晶圓加工用膠帶中，支承構件以在脫模膜的短邊方向的兩端部、並且在 達到脫模膜的短邊方向中與接著劑層的端部對應的區域的方式設置，因此未看到空氣向接著劑層的內側的侵入。另外，雖然在TD方向上看到了支承構件所致的轉印痕跡，但在MD方、TD方向未看到隨機產生的標籤痕跡。另外，雖然在TD方向上產生了支承構件所致的轉印痕跡，但由於為晶圓貼合區域的外側，因此在晶圓貼合時未產生孔隙。 As shown in Table 2, in the tape for processing wafers according to the examples, the support members are provided at both ends in the short-side direction of the release film, and Since it is set so that it may reach the area | region corresponding to the edge part of an adhesive bond layer in the short side direction of a release film, the penetration of air to the inside of an adhesive bond layer is not seen. In addition, although the transfer marks caused by the support member were seen in the TD direction, randomly generated label marks were not seen in the MD side and the TD direction. In addition, although a transfer mark due to the support member was generated in the TD direction, since it was outside the wafer bonding region, no void was generated during wafer bonding.
與此相對，比較例所涉及的晶圓加工用膠帶中，支承構件以在脫模膜的短邊方向的兩端部、並且在未達到脫模膜的短邊方向中與接著劑層的端部對應的區域的方式設置，因此雖然在MD方向、TD方向均未看到轉印痕跡，但空氣侵入到接著劑層的內側，在晶圓貼合時一部分中產生了孔隙。 On the other hand, in the wafer processing tape according to the comparative example, the support member is positioned at both ends in the short-side direction of the release film and does not reach the end of the adhesive layer in the short-side direction of the release film. Since the transfer marks are not seen in either the MD direction or the TD direction, air enters the inside of the adhesive layer, and voids are generated in part during wafer bonding.
10‧‧‧晶圓加工用膠帶 10‧‧‧ Wafer Processing Tape
11‧‧‧脫模膜 11‧‧‧ release film
11a‧‧‧第1面 11a‧‧‧Part 1
11b‧‧‧第2面 11b‧‧‧Part 2
12‧‧‧接著劑層 12‧‧‧ Adhesive layer
13‧‧‧粘合膜 13‧‧‧adhesive film
13a‧‧‧圓形標籤部 13a‧‧‧Circular label section
13b‧‧‧周邊部 13b‧‧‧ Peripheral
14‧‧‧支承構件 14‧‧‧ support member
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| US20120100325A1 (en) * | 2007-09-14 | 2012-04-26 | Hiromitsu Maruyama | Wafer processing tape |
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| JPH04360653A (en) | 1991-06-06 | 1992-12-14 | Tochigi Pref Gov | Production of egg highly containing polybasic unsaturated fatty acid of hemp seed |
| JP4360653B2 (en) * | 2007-09-14 | 2009-11-11 | 古河電気工業株式会社 | Wafer processing tape |
| JP5276063B2 (en) | 2010-07-16 | 2013-08-28 | 古河電気工業株式会社 | Sheet for semiconductor wafer dicing and die bonding |
| JP4976532B2 (en) * | 2010-09-06 | 2012-07-18 | 日東電工株式会社 | Film for semiconductor devices |
| JP4991921B2 (en) * | 2010-09-06 | 2012-08-08 | 日東電工株式会社 | Film for semiconductor device and semiconductor device |
| JP2012082285A (en) * | 2010-10-08 | 2012-04-26 | Hitachi Chemical Co Ltd | Adhesive sheet |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120100325A1 (en) * | 2007-09-14 | 2012-04-26 | Hiromitsu Maruyama | Wafer processing tape |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105694748A (en) | 2016-06-22 |
| CN105694748B (en) | 2019-07-30 |
| KR20160067754A (en) | 2016-06-14 |
| JP6382088B2 (en) | 2018-08-29 |
| TW201633387A (en) | 2016-09-16 |
| JP2016111157A (en) | 2016-06-20 |
| KR101828135B1 (en) | 2018-02-09 |
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