TWI641142B - 絕緣的凸塊接合 - Google Patents

絕緣的凸塊接合 Download PDF

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Publication number
TWI641142B
TWI641142B TW103108778A TW103108778A TWI641142B TW I641142 B TWI641142 B TW I641142B TW 103108778 A TW103108778 A TW 103108778A TW 103108778 A TW103108778 A TW 103108778A TW I641142 B TWI641142 B TW I641142B
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Taiwan
Prior art keywords
semiconductor
drain
source
semiconductor power
contact elements
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TW103108778A
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English (en)
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TW201448222A (zh
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喬葛瑞 迪克斯
羅傑 梅爾雀
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微晶片科技公司
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Publication of TW201448222A publication Critical patent/TW201448222A/zh
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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Abstract

本發明揭示一種半導體功率晶片，其可具有：一半導體晶粒，其具有製造於其一基板上之一功率器件，其中該功率器件具有配置在該半導體晶粒之頂部上之至少一個第一接觸元件、複數個第二接觸元件及複數個第三接觸元件；及一絕緣層，其安置在該半導體晶粒之頂部上且經圖案化以提供接達該複數個第二及第三接觸元件以及該至少一個第一接觸元件之開口。

Description

絕緣的凸塊接合
本發明係關於半導體功率器件，且更特定而言係關於使用凸塊接合將一半導體功率器件製造至一引線框架以在該引線框架與半導體功率器件之源極、汲極及閘極元件之間分配電流。
半導體功率器件在大電流密度下操作，且因此，要求具有足夠低之接觸電阻之載流導體以充分地處置往返於該器件之電流。然而，對半導體功率器件之製造期間之金屬沈積厚度存在限制。此金屬沈積厚度限制要求必須在半導體功率器件(舉例而言，功率場效應電晶體(功率FET))之前側及背側兩者上皆沈積金屬導體。但必須使用該器件之功率元件(舉例而言，汲極)之背側接觸需要擴展處理來消除半導體基板之串聯電阻，因而顯著增加最終半導體功率產品之成本。
為在一半導體功率器件上更佳地分配電流，凸塊接合通常自已受讓於申請人之美國專利公開案US2012/0126406獲知。此技術允許減少製作一半導體功率器件之處理步驟，且因而減小其製作成本。
需要進一步減小一半導體功率器件之製作成本且改良其效能。
根據一實施例，一種半導體功率晶片可包括：一半導體晶粒，其具有製造於其一基板上之一功率器件，其中該功率器件包括配置在該半導體晶粒之頂部上之至少一個第一接觸元件、複數個第二接觸元 件及複數個第三接觸元件；及一絕緣層，其安置在該半導體晶粒之頂部上且經圖案化以提供接達該複數個第二及第三接觸元件以及該至少一個第一接觸元件之開口。
根據一進一步實施例，該第一接觸元件係一閘極接觸元件，該第二接觸元件係一源極接觸元件，且該第三接觸元件係一汲極接觸元件。根據一進一步實施例，該開口可具有一圓或橢圓形狀。根據一進一步實施例，每一接觸元件可具有一細長條帶之形式且可由銅製成。根據一進一步實施例，該絕緣層可具有1密耳至2密耳之一厚度。根據一進一步實施例，第一、第二及第三接觸元件可由銅製成且其中焊料安置於每一開口內。
根據另一實施例，一種半導體功率器件可包括如上所述之一半導體功率晶片且進一步包括：連接材料，其安置於每一開口內；及一引線框架，其包括放置於該晶粒之頂部上且經由該連接材料與該閘極、源極及汲極之複數個接觸元件連接之閘極、源極及汲極引線指狀件。
根據該半導體功率器件之一進一步實施例，每一引線指狀件具有一細長條帶之形式。根據該半導體功率器件之一進一步實施例，該引線框架可進一步包括分別互連該等汲極與源極引線指狀件之左連接元件及右連接元件。根據該半導體功率器件之一進一步實施例，該等汲極及源極引線指狀件可替代地經配置以形成一交指狀結構。根據該半導體功率器件之一進一步實施例，該引線框架可經定大小以與該複數個接觸元件匹配。根據該半導體功率器件之一進一步實施例，該引線框架可實質上大於該半導體功率晶片之一晶粒。根據該半導體功率器件之一進一步實施例，第一、第二及第三接觸元件可由銅製成且其中該連接材料係焊料。
根據又一項實施例，一種半導體功率器件可包括至少一第一及 第二半導體功率晶片，每一半導體功率晶片係如上所述形成，且該半導體功率器件可進一步包括：連接材料，其安置於每一開口內；及一引線框架，其具有一第一及第二區，每一第一及第二區包括放置在該半導體功率晶片之頂部上且經由該連接材料分別與該等第一及第二半導體晶片之該閘極、源極及汲極之複數個接觸元件連接之閘極、源極及汲極引線指狀件。
根據該半導體功率器件之一進一步實施例，每一引線指狀件可具有一細長條帶之形式。根據該半導體功率器件之一進一步實施例，該引線框架可進一步包括該等第一及第二功率半導體晶片中之每一者之分別互連該等汲極與源極引線指狀件之左連接元件及右連接元件。根據該半導體功率器件之一進一步實施例，該等汲極及源極引線指狀件可替代地經配置以形成一交指狀結構。根據該半導體功率器件之一進一步實施例，該引線框架亦可使該第一半導體晶片之一源極與該第二半導體晶片之一汲極或該等第一及第二半導體晶片之源極連接在一起。根據該半導體功率器件之一進一步實施例，第一、第二及第三接觸元件可由銅製成且其中該連接材料係焊料。
根據又一項實施例，一種半導體器件可包括如上所述之一半導體功率晶片且進一步包括：另一晶片；連接材料，其安置於該半導體功率晶片之每一開口內；及一引線框架，其具有一第一區及經組態用於線接合該另一晶片之一第二區，該第一區包括放置在該半導體功率晶片之頂部上且經由該連接材料與該半導體功率晶片之該閘極、源極及汲極中之每一者之複數個連接元件連接之閘極、源極及汲極引線指狀件。
根據該半導體功率器件之一進一步實施例，每一引線指狀件可具有一細長條帶之形式。根據該半導體功率器件之一進一步實施例，該引線框架可進一步包括分別互連該等汲極與源極引線指狀件之左連 接元件及右連接元件。根據該半導體功率器件之一進一步實施例，該等汲極及源極引線指狀件可替代地經配置以形成一交指狀結構。根據該半導體功率器件之一進一步實施例，該另一晶片可係其係可操作的以控制該半導體功率晶片之一微控制器晶片。根據該半導體功率器件之一進一步實施例，該另一晶片可係其係可操作的以控制該半導體功率晶片之一脈衝寬度調變晶片。
根據又一項實施例，一種半導體器件可包括至少一第一及第二半導體功率晶片，每一半導體功率晶片係如上所述形成，且該半導體器件可進一步包括：一第三晶片；連接材料，其分別安置於該第一及第二半導體功率晶片之每一開口內；及一引線框架，其具有一第一及第二區及經組態用於線接合該另一晶片之一第三區，每一第一及第二區包括經調適以經由該連接材料分別與該等第一及第二半導體晶片之該閘極、源極及汲極之接觸元件連接之閘極、源極及汲極引線指狀件。
根據該半導體功率器件之一進一步實施例，用於該第一及第二半導體功率晶片之每一引線指狀件可具有一細長條帶之形式，其中該引線框架進一步包括用於該等第一及第二半導體功率晶片中之每一者之分別互連該等汲極與源極引線指狀件之左連接元件及右連接元件，且其中該等汲極及源極引線指狀件係替代地經配置以形成一交指狀結構。根據該半導體功率器件之一進一步實施例，該第三晶片可係其係可操作的以控制該半導體功率晶片之一微控制器晶片或其係可操作的以控制該半導體功率晶片之一脈衝寬度調變晶片。
根據又一項實施例，一種半導體封裝可包括如上所述之一第一及第二半導體功率晶片，且該半導體封裝進一步包括：連接材料，其安置在該第一及第二半導體晶片之每一開口內；及一引線框架，其包括放置在晶粒之頂部上之第一及第二閘極、一共同源極及第一及第二 汲極引線指狀件，其中該第一閘極引線指狀件與該第一半導體晶片之閘極接觸元件連接，該第一汲極引線指狀件與該第一半導體晶片之複數個汲極接觸元件連接，該第二閘極引線指狀件與該第二半導體晶片之該閘極接觸元件連接，該第二汲極引線指狀件與該第二半導體晶片之該複數個汲極接觸元件連接，且該共同源極引線指狀件與該第一及第二半導體晶片之複數個源極接觸元件連接。
102‧‧‧功率半導體晶粒/晶片/單獨功率半導體晶片/晶粒/已安裝功率電晶體晶片
104‧‧‧開口/圓形開口/焊料開口/引線框架
106‧‧‧開口/圓形開口/焊料開口
108‧‧‧開口/圓形開口/焊料開口
110‧‧‧閘極凸塊/凸塊指狀件/閘極凸塊指狀件/凸塊結構/基本凸塊結構
120‧‧‧源極凸塊/凸塊指狀件/源極凸塊指狀件/凸塊結構/基本凸塊結構
130‧‧‧汲極凸塊/凸塊指狀件/汲極凸塊指狀件/汲極指狀件/ 凸塊結構/基本凸塊結構
140‧‧‧晶粒
150‧‧‧絕緣層
152‧‧‧單獨功率半導體晶片
154‧‧‧橢圓開口/開口
154’‧‧‧開口
156‧‧‧橢圓開口/開口
156’‧‧‧開口
158‧‧‧橢圓開口/開口
158’‧‧‧開口
160‧‧‧焊料/焊料球
172‧‧‧單獨半導體晶粒
200‧‧‧引線框架
204‧‧‧閘極引線指狀件/閘極指狀件/引線框架指狀件/凸塊結構/閘極框架指狀件
204’‧‧‧閘極框架指狀件
206‧‧‧源極引線指狀件/源極接觸元件/引線框架指狀件/凸塊結構/源極框架指狀件
208‧‧‧汲極引線指狀件/汲極接觸元件/引線框架指狀件/凸塊結構/汲極框架指狀件
210‧‧‧半導體晶粒/晶粒/基板
220‧‧‧晶粒/磊晶層
230‧‧‧晶粒/基極區
240‧‧‧晶粒/源極區
240’‧‧‧晶粒
250‧‧‧汲極區/共同源極框架指狀件
260‧‧‧閘極
275‧‧‧凸塊結構
285‧‧‧凸塊結構
295‧‧‧凸塊結構
310‧‧‧互連源極-汲極區段
430‧‧‧晶片
510‧‧‧引線框架
530‧‧‧第二晶片/功率電晶體晶片/晶片
540‧‧‧支撐結構/支撐連接
570‧‧‧接腳/外部接腳/指定接腳
610‧‧‧引線框架
620‧‧‧微控制器晶片/第一晶片
650‧‧‧接合墊
710‧‧‧外部接腳/引線框架
720‧‧‧電晶體晶片/晶粒/功率電晶體晶片
730‧‧‧電晶體晶片/晶粒/功率電晶體晶片
740‧‧‧接合線
750‧‧‧接合線
3B-3B‧‧‧線
G‧‧‧閘極
D‧‧‧汲極
S‧‧‧源極
結合附圖參照以下說明可更全面地理解本發明，在附圖中：圖1A圖解說明根據本發明之一特定實例性實施例之一半導體功率器件之一示意性平面視圖及一引線框架之一平面視圖；圖1B圖解說明根據另一實施例之一半導體功率器件之一示意性平面視圖；圖2A至圖2D進一步圖解說明根據進一步實例性實施例之半導體功率器件之示意性平面視圖；圖3A展示一半導體晶粒中之一電晶體之一可能的實施例；圖3B展示沿著圖1A或圖1B中之線3B-3B之一剖面視圖；圖4A至圖4C展示根據各項實施例之具有已安裝半導體晶片之各個引線框架結構之俯視圖；圖5展示根據各項實施例之在一引線框架上之一已安裝功率半導體之一剖面圖；及圖6至圖8展示安裝在一引線框架上之單個及多個晶片之各項實例。
儘管本發明易於作出各種修改及替代形式，但在圖式中展示並在本文中詳細闡述其特定實例性實施例。然而應理解，本文對特定實例性實施例之說明並非意欲將本發明限定於本文所揭示之特定形式，而是相反，本發明意欲涵蓋由隨附申請專利範圍所界定之所有修改及 等效形式。
根據本發明之教示，使用一凸塊或條塊陣列在半導體功率器件之元件與一厚得多的引線框架之間分配電流消除對一單獨背側接觸及(若干)後續處理步驟之需要。凸塊或條塊陣列可呈條帶形式。然後，在已藉由在此等球凸塊或條塊凸塊之頂部上添加一絕緣層並圖案該絕緣層以為焊料提供開口而形成此等凸塊之後進一步處理一半導體之一頂部側。然後用凸塊焊料或任何其他適合連接材料填充該等開口。因此，可針對(舉例而言)一功率場效應電晶體(FET)器件之製造而簡化覆晶配置與一引線框架之組裝。特定而言針對僅前側功率器件，使用具有各別開口之一額外絕緣層消除對覆晶組裝之複雜引線框架及精確對準容限之需要。然後可使用覆晶球接合技術使半導體功率器件附接至一引線框架。此導致較低處理及製作成本，以及用於半導體功率器件之一較小形數。不需要低電阻基板且消除一磊晶矽生長步驟。此一已安裝功率器件可組合且連接至一殼體內之一第二晶片，其中該第二晶片可包括一微控制器或脈衝寬度調變控制器。
根據本發明之教示之使用凸塊覆晶至引線框架製造技術之優點係：1)晶圓級晶片尺寸封裝解決方案，2)多個功率FET可在一單個封裝中互連，3)半導體功率晶粒可在該晶粒之一個面上併入源極及汲極觸點兩者，此乃因引線框架攜載並分配器件操作電流。經圖案化介電質頂部層簡化引線框架，舉例而言，一常見引線框架可用於不同產品大小。經改良技術仍提供一極低連接電阻。
現參考圖式，其示意性地圖解說明特定實例性實施例之細節。圖式中之相似元件將由相似編號表示，且在某些實施例中類似元件將由使用帶撇號的元件符號之相似編號表示。
參考圖1A，其繪示根據本發明之一特定實例性實施例之一半導 體功率器件之一示意性平面視圖及一引線框架之一平面視圖。一功率半導體晶粒102包括分別地可以如在圖1A中所展示之條帶形式定形狀以提供至基本金屬層之一連接之閘極(G)凸塊110、源極(S)凸塊120及汲極(D)凸塊130。一介電質層然後將施加至此結構之頂部且經圖案化以提供開口104、106、108。然後用焊料或任何其他適合連接材料填充此等開口以在一引線框架與半導體晶粒之作用區之間提供一實體及電連接。可藉由沈積在互連金屬層之頂部上(舉例而言，在第二金屬層之頂部上)之一適合材料(諸如，一經圖案化金屬層)形成凸塊指狀件110、120、130。舉例而言，源極及汲極區將連接至一第一金屬層上之金屬流道，然後一第二金屬層將形成其中將沈積頂部觸點之金屬之較寬金屬流道。
如在左側所展示，根據一項實施例，在施加一介電質層以覆蓋汲極、源極及閘極凸塊之後，藉由一適合光化學過程在不同位置處形成圓形開口104、106及108。閘極凸塊指狀件110僅包括一單個圓形開口，此乃因沒有大電流將流至閘極。然而，根據其他實施例，可提供一個以上圓形開口。針對每一源極凸塊指狀件120及汲極凸塊指狀件130，提供三個圓形開口，其中用於源極凸塊指狀件120之圓形開口106全部配置在右側，其中用於汲極指狀件130之圓形開口108類似地配置在左側。
總之，汲極及源極區將經由標準互連技術連接至一最終金屬層。在將凸塊指狀件放置在連接至最終金屬層之器件之頂部上之後，將施加一介電質層。此絕緣層將經圖案化以在絕緣層中產生開口，該等開口填充有焊料以能夠連接在半導體器件之頂部上之一引線框架。
閘極元件上之焊料開口由編號104表示。源極元件上之焊料開口由編號106表示且汲極元件上之焊料開口由編號108表示。複數個焊料開口之每一閘極、源極及汲極群組可以一群組組態配置在各別半導體 器件閘極、源極及汲極凸塊指狀件中之每一者上。然而，僅源極及汲極凸塊金屬指狀件需要大數目個連接以提供一極低連接電阻。因此，閘極指狀件可具有比在圖1A中所展示之單個開口104多的開口。在各別凸塊指狀件上方之介電質層中提供相同數目個開口可係更實際的且該等開口因此亦可形成一矩陣。在該等開口已在凸塊指狀件110、120、130上形成之後，開口104、106、108將填充有焊料或其他連接/接合材料，如下文將關於圖3B更詳細地闡釋。
具有一導電框架及引線指狀件之一引線框架200經調適以接收並以一「覆晶」組態接觸施加至功率半導體晶粒102之凸塊指狀件之頂部上之介電質層中之複數個開口之焊料。在圖1A中所展示之引線框架104係以一「最終狀態」繪示，換言之，已移除該等指狀件之間的任何可能的支撐接頭。一閘極引線指狀件204連接至開口104中之焊料，源極引線指狀件206連接至開口106中之焊料，且汲極引線指狀件208連接至開口108中之焊料。引線框架之引線指狀件係長度上對應於晶片102上之凸塊指狀件之細長金屬條帶。因此，此等指狀件替代地經配置為在圖1A中所展示之源極及汲極指狀件。配置在一側(舉例而言，右側)上之一連接條帶連接所有汲極指狀件以形成汲極接觸元件208且對應地，另一側(舉例而言，左側)上之一連接條帶連接所有源極指狀件以形成源極接觸元件206。因此，形成如在圖1A中所展示之一交指狀結構。一單個閘極指狀件204可配置在此結構之任一側上。
可使用不同於此交指狀結構之其他結構，其中具有由一介電質層覆蓋之複數個凸塊指狀件或區且具備用於源極及汲極之焊料開口，如將在下文更詳細地展示。
圖1B展示另一實施例，其中代替介電質層中之所界定數目個圓形開口，使用覆蓋與圓形開口104、106、108近似相同之區但提供甚至更大實際接觸區之一單個橢圓開口154、156、158。可根據其他實 施例使用針對各個開口之其他形狀。
放置在開口中之焊料經由將引線框架104及晶粒102加熱至足以熔融所施加焊料之一溫度來將引線框架104連接至凸塊指狀件110、120、130。根據某些實施例亦可使用導電環氧樹脂，且該導電環氧樹脂係藉由將晶粒102上之開口中之B階段環氧樹脂充分加熱至C階段使其等附接至引線框架104而附接至引線框架104。其後，包括晶粒102及引線框架104之組件可經封裝或用作一未經封裝引線框架器件。如上所述，可在適當製造階段處移除在引線框架200中之電連接特定元件之任何支撐結構以在引線框架200與晶粒之間提供適當電連接。
圖2A展示類似於圖1B之實施例之另一實施例，其中引線框架指狀件204、206及208分別與閘極、源極及汲極相關聯。在圖2A至圖2D中以一俯視圖形式倒置地展示半導體晶粒210，因此展示其背側。然而，編號154、156及158指示施加至晶粒210之頂部側之介電質層中之開口。此等開口154、156、158又填充有用於形成與一引線框架指狀件204、206、208之電接觸之焊料或其他適合材料。各別凸塊結構204、206、208上面之介電質層中之每一開口154、156、158可沿著一特定區延伸且可具有如所展示之(舉例而言)一橢圓佔用面積。此外，閘極凸塊指狀件110可僅使用一單個橢圓開口154以連接至引線框架指狀件204，此乃因無大電流將流經閘極凸塊指狀件110。另一選擇係，可應用針對各個開口之其他形狀。閘極凸塊上面之單個開口由編號154表示。源極凸塊上面之開口由編號156表示且汲極凸塊上面之開口由編號158表示。圖2A展示用於單個晶粒之一引線框架指狀件204、206、208，其中該晶粒具有近似相同之大小。如在圖2A中所展示，引線框架提供一閘極框架指狀件204、一源極框架指狀件206及一汲極框架指狀件208。閘極框架指狀件204、源極框架指狀件206及汲極框架指狀件208各自將藉助於已放置在開口中之各別焊料透過施加至晶 粒210之頂部之介電質層中之五個開口154、156及158而連接。在圖2A中所展示之實施例使用比圖1A之實施例大的焊料開口以得到甚至更低電阻，此乃因電流不必行進到遠至「條塊」中。
如在圖2B及圖2C中所展示，此引線框架亦可用於數個不同大小之晶粒，舉例而言，晶粒220或晶粒230。該晶粒因此將經按比例調整且可在介電質層中具有較小開口156及158，如在圖2B及圖2C中所展示。圖2B中之實施例使用與圖2A之實施例相同之引線框架，其中晶粒相對於垂直尺寸係較小的。圖2C中之實施例使用與圖2A之實施例相同之引線框架，其中晶粒相對於垂直及水平尺寸係較小的。圖2D展示另一實施例，其中一引線框架經設計以接收一個以上晶粒。舉例而言，兩個晶粒240及240'可放置在具有兩個閘極框架指狀件204、204'、兩個汲極框架指狀件206、206'及一共同源極框架指狀件250之一引線框架上以藉助於(舉例而言)焊料透過頂部介電質層中之各別開口154、154'、156、156'、158、158'而連接。根據某些實施例，實際凸塊係由銅形成且連接材料係焊料。因此，根據某些實施例，開口填充有適當量之焊料。其他實施例可對凸塊使用導電環氧樹脂或其他適合材料且實際連接材料則可由與基本凸塊相同之材料組成。在(b)處展示兩個半導體功率器件之一電互連示意圖。
圖3A展示透過具有凸塊結構275、285、295及沈積在頂部側上之未經圖案化絕緣層150之一功率電晶體之一可能的實施例之一剖面圖。如可看出，一標準場效應功率電晶體可由並聯耦合之複數個單元形成。一單元可對稱地形成，如在圖3A中所展示。此處，在一基板210上形成一磊晶層220。在磊晶層220內，一單元可由其中嵌入源極區240之兩個基極區230形成。在兩個基極區之間，可形成一汲極區250。對於每一單元，兩個閘極260係形成於磊晶層220之頂部上之一絕緣層內，其中閘極260至少覆蓋源極區240與磊晶層220之間的基極 區內之一橫向通道區。其他單元緊挨此單元配置。此外，可使用其他單元結構，舉例而言，基底與源極區可為對稱的，使得一基極區亦可用於一相鄰單元。如上文所論述，一兩個金屬層式結構可用於使每一單元之每一電晶體之源極、汲極及閘極與凸塊結構275、285、295互連，如在圖3A中示意性地展示。此等結構可具有不同形狀且可(舉例而言)具有一條帶之形式。然而，可取決於器件之實際基本設計而使用其他形狀。第一金屬層提供至源極及汲極區之窄接觸且亦提供閘極之互連。第二金屬層用於使第一金屬層結構與其頂部上形成有凸塊結構275、285、295之各別金屬指狀件連接。如在圖3A中進一步圖示，一絕緣層150沈積在半導體晶粒之頂部上。圖3A展示在絕緣層150經圖案化之前的一狀態。
圖3B展示沿著圖1A或圖1B之線3B-3B之一剖視圖。圖3B展示晶粒140內之無細節功率電晶體結構。因此，在圖3B中不繪示金屬層且僅展示凸塊結構110、120、130。如在圖1A及圖1B中所展示之凸塊指狀件之間的間距可係(舉例而言)約55微米或約2密耳且凸塊指狀件可係約150微米或6密耳寬。
圖3B展示絕緣層150可如何經圖案化以提供用於接達各別凸塊結構110、120及130之開口104、106、108，其中該剖視圖僅展示用於源極凸塊120之開口。絕緣層150可係一干膜壓層，或如基於polyemit或環氧樹脂之材料之旋塗介電質。標稱地，根據某些實施例，其可係1密耳至2密耳厚。在已藉由一光化學過程圖案化絕緣層150以提供開口至基本凸塊結構110、120及130之後，用焊料160填充此等開口。此外，圖3B展示在加熱該器件以產生一永久連接之前用於連接至放置在焊料球160上面之源極之引線框架指狀件206。
圖4A至圖4C展示根據各項實施例之一引線框架上之已安裝半導體功率晶片之實例。在圖4A中，根據圖1A至圖1B、圖2A至圖2C及圖 3B形成之兩個單獨功率半導體晶片102或152放置在引線框架上。每一器件因此與另一器件絕緣。圖4B展示具有根據圖1A至圖B、圖2A至圖2C及圖3B形成之覆蓋兩個交指狀源極-汲極-閘極接觸區之一單個晶片430之一實例。因此，晶片430必須在磊晶層內提供經絕緣器件。此可藉由將每一晶體管提供於其本身指定井中來實現，否則每一器件之汲極將短路。
圖4C展示類似於圖4A或圖4B之引線框架之一引線框架的一實例，該引線框架經結構化以連接至各自根據本發明之各項實施例製作之兩個單獨半導體晶粒172、173。
圖5展示在使用焊料160之一引線框架200上之一已安裝功率電晶體晶片102之一剖面視圖。該剖視圖係穿過沿著其長度提供複數個開口之一源極或汲極指狀件且在加熱及接合之後但在封裝之前截取的。然而，如所論述，可提供較少開口且不要求提供與如在圖5中所展示一樣多的開口。
圖6展示安裝在如上文所闡釋類似於圖1A及圖1B之實施例之一引線框架510上之一晶片530之一第一實例。引線框架亦可具有如在圖2A至圖2C所展示之形狀。該引線框架可具有複數個外部接腳570，在所展示之實例中具有8個接腳。代替接腳，引線框架當然亦可提供如在無引線封裝(舉例而言，QFN或DFN封裝)中所使用之墊。所展示之功率電晶體晶片530對汲極連接使用四個接腳570且對源極連接使用三個接腳570。一單個接腳用於閘極連接。出於安裝目的且在包封之前，引線框架可包括複數個支撐連接，該複數個支撐連接中之三者藉由元件符號540表示。用於外部連接之接腳570可係單個接腳或形成如在圖6所展示之經連接接腳之一群組。因此，可保持一群組內之此等接腳之間的任一支撐連接。此外，根據其他實施例，較寬接腳可用於源極-汲極連接以支援一較大電流。
控制電路之某些應用(特定而言，微控制器應用)要求對功率電晶體之控制(舉例而言，開關模式電源供應器控制器、降壓型轉換器或馬達控制應用)。此等應用因此通常使用單獨分立式功率電晶體。根據各項實施例，一脈衝寬度調變器或甚至一微控制器可與如上所述之一功率電晶體一起封裝。
圖7展示可支援以習用接合技術耦合至引線框架610之一第一晶片620(舉例而言，一微控制器晶片)及包括如上所述之一功率電晶體且使用上述覆晶凸塊接合技術安裝至引線框架之一第二晶片530之一引線框架610之一實例。此外，可使用用於如在圖2A至圖2C中所展示之電晶體晶片之一引線框架結構。元件符號570同樣指示引線框架510之一外部接腳。此外，在圖7中展示具有複數個支撐連接之引線框架610，該複數個支撐連接中之四者由元件符號540指示。如上所述，在將器件封圍在一殼體中之前切除此等支撐結構以消除框架及至指定接腳570之適當連接中之任何不需要的短接。如所展示，第一晶片620可在引線框架610上之適當連接點處互連至源極、汲極及閘極指狀件中之至少一者。儘管第一晶片620對至一接合墊650之每一連接使用單個接腳570，但用於第二晶片之引線框架之區段又可使多個接腳570連接至每一源極及汲極連接以提供一低電阻及對大電流之支援。然而，根據各項實施例，其他外部接腳(舉例而言，較寬接腳)可用於第二晶片530之源極及/或汲極觸點。如上所述，第一晶片520可係一脈衝寬度調變器件、一控制器或一微控制器，其可操作以與一功率電晶體介接。為此，此等器件具有能夠直接驅動功率電晶體之閘極之整合式驅動器。
圖8展示包括一引線框架710之又一實施例，引線框架710具有藉由標準線接合連接之一微控制器晶片620及以如以上所闡釋之覆晶技術安裝之兩個功率電晶體晶片720及730。具有兩個功率電晶體之區段 對應於在圖4中所展示之引線框架。此外，代替在右側展示之用於晶粒720及730之結構，可使用如在圖2D中所展示之引線框架結構。此處，與圖7相比提供額外的外部接腳710用於經由接合線750與互連源極-汲極區段310耦合。兩個電晶體晶片720、730中之任一源極、汲極及/或閘極可經由微控制器晶片620之一接合線740連接至一接合墊650，如在圖8中所實例性展示。此外，圖8展示將在包封之前移除之複數個支撐結構540。
在各個圖式中展示之實施例不侷限於場效應電晶體而是亦可用於任一類型之雙極電晶體結構。
儘管已參考本發明之實例性實施例來繪示、闡述及界定本發明之各實施例，但此參考並不意欲限定本發明，且不應推斷出存在此限定。所揭示之標的物能夠在形式及功能上具有大量修改、變更及等效形式，熟悉此項技術者根據本發明將會聯想到此等修改、變更及等效形式並受益於本發明。所繪示及所闡述之本發明實施例僅作為實例，而並非係對本發明範圍之窮盡性說明。

Claims (30)

  1. 一種半導體功率晶片，其包括：一半導體晶粒，其包括一功率器件、配置在該半導體晶粒之頂部上之至少一個第一接觸元件、複數個第二接觸元件及複數個第三接觸元件，其中該至少一個第一接觸元件、該複數個第二接觸元件及該複數個第三接觸元件經組態以提供該功率器件之一外部連接(external connection)；一絕緣層(insulation layer)，其安置在該半導體晶粒之頂部上，其中該絕緣層覆蓋該至少一個第一接觸元件、該複數個第二接觸元件及該複數個第三接觸元件，且其中該絕緣層經圖案化以提供接達(access)該複數個第二接觸元件及該複數個第三接觸元件及該至少一個第一接觸元件之多個開口。
  2. 如請求項1之半導體功率晶片，其中該第一接觸元件係一閘極接觸元件，該第二接觸元件係一源極接觸元件，且該第三接觸元件係一汲極接觸元件。
  3. 如請求項1之半導體功率晶片，其中該開口具有一圓或橢圓形狀。
  4. 如請求項1之半導體功率晶片，其中每一接觸元件具有一細長條帶(elongated strip)之形式且係由銅製成。
  5. 如請求項1之半導體功率晶片，其中該絕緣層具有1至2密耳(mil)之一厚度。
  6. 如請求項1之半導體功率晶片，其中該等第一、第二及第三接觸元件由銅製成，且其中焊料(solder)安置於每一開口內。
  7. 一種半導體功率器件，其包括如請求項2之一半導體功率晶片，該半導體功率器件進一步包括：連接材料，其安置於每一開口內；一引線框架(lead-frame)，其包括放置於該晶粒之頂部上之閘極、源極及汲極引線指狀件(lead-fingers)，且該閘極、源極及汲極引線指狀件經由該連接材料與該閘極、源極及汲極之該複數個接觸元件連接。
  8. 如請求項7之半導體功率器件，其中每一引線指狀件具有一細長條帶之形式。
  9. 如請求項8之半導體功率器件，其中該引線框架進一步包括分別互連該等汲極與源極引線指狀件(drain and source lead fingers)之左連接元件及右連接元件。
  10. 如請求項9之半導體功率器件，其中該等汲極與源極引線指狀件經交互配置以形成一交指狀結構(inter-digital structure)。
  11. 如請求項7之半導體功率器件，其中該引線框架經定大小(sized)以與該複數個接觸元件匹配。
  12. 如請求項7之半導體功率器件，其中該引線框架實質上大於該半導體功率器件之一晶粒。
  13. 如請求項7之半導體功率器件，其中該等第一、第二及第三接觸元件由銅製成，且其中該連接材料係焊料。
  14. 一種半導體功率器件，其包括至少一第一及第二半導體功率晶片，每一半導體功率晶片係如請求項2所形成，該半導體功率器件進一步包括：連接材料，其安置於每一開口內；一引線框架，其具有一第一區及一第二區，該第一區及該第二區之每一者包括閘極、源極及汲極引線指狀件，該等閘極、源極及汲極引線指狀件放置在該半導體功率晶片之頂部上且經由該連接材料分別與該等第一及第二半導體晶片之該閘極、源極及汲極之該複數個接觸元件連接閘極、源極及汲極引線指狀件。
  15. 如請求項14之半導體功率器件，其中每一引線指狀件具有一細長條帶之形式。
  16. 如請求項14之半導體功率器件，其中該引線框架進一步包括用於該等第一及第二功率半導體晶片之每一者之左連接元件及右連接元件，該左連接元件及右連接元件分別互連該等汲極與源極引線指狀件。
  17. 如請求項16之半導體功率器件，其中該等汲極與源極引線指狀件經交互配置以形成一交指狀結構。
  18. 如請求項14之半導體功率器件，其中該引線框架亦與該第一半導體晶片之一源極及該第二半導體晶片之一汲極連接在一起，或者與該第一及第二半導體晶片之源極連接在一起。
  19. 如請求項14之半導體功率器件，其中該等第一、第二及第三接觸元件由銅製成，且其中該連接材料係焊料。
  20. 一種半導體器件，其包括如請求項2之一半導體功率晶片，該半導體器件進一步包括：另一晶片；連接材料，其安置於該半導體功率晶片之每一開口內；一引線框架，其具有一第一區及經組態用於線接合(wire bonding)該另一晶片之一第二區，該第一區包括放置在該半導體功率晶片之頂部上之閘極、源極及汲極引線指狀件(gate,source and drain lead-fingers)，且該閘極、源極及汲極引線指狀件經由該連接材料與該半導體功率晶片之該閘極、源極及汲極中之每一者之該複數個連接元件連接。
  21. 如請求項20之半導體器件，其中每一引線指狀件具有一細長條帶之形式。
  22. 如請求項21之半導體器件，其中該引線框架進一步包括分別互連該等汲極與源極引線指狀件之左連接元件及右連接元件。
  23. 如請求項22之半導體器件，其中該等汲極與源極引線指狀件經交互配置以形成一交指狀結構。
  24. 如請求項20之半導體器件，其中該另一晶片係可操作以控制該半導體功率晶片之一微控制器晶片。
  25. 如請求項20之半導體器件，其中該另一晶片係可操作以控制該半導體功率晶片之一脈衝寬度調變晶片。
  26. 一種半導體器件，其包括至少一第一及第二半導體功率晶片，每一半導體功率晶片係如請求項2所形成，該半導體器件進一步包括：一第三晶片；連接材料，其分別安置於該第一及第二半導體功率晶片之每一開口內；一引線框架，其具有一第一及第二區及經組態用於線接合該第三晶片之一第三區，每一第一及第二區包括經調適以經由該連接材料分別與該等第一及第二半導體晶片之該閘極、源極及汲極之該等接觸元件連接之閘極、源極及汲極引線指狀件。
  27. 如請求項26之半導體器件，其中該等第一及第二半導體功率晶片之每一引線指狀件具有一細長條帶之形式，其中該引線框架進一步包括用於該等第一及第二半導體功率晶片之每一者之左連接元件及右連接元件，該左連接元件及右連接元件分別互連該等汲極與源極引線指狀件，及其中該等汲極與源極引線指狀件經交互配置以形成一交指狀結構。
  28. 如請求項26之半導體器件，其中該第三晶片係可操作以控制該半導體功率晶片之一微控制器晶片或可操作以控制該半導體功率晶片之一脈衝寬度調變晶片。
  29. 一種半導體封裝，其包括如請求項2之一第一及第二半導體功率晶片，該半導體封裝進一步包括：連接材料，其安置於該等第一及第二半導體功率晶片之每一開口內；一引線框架，其包括一第一閘極與一第二閘極、一共同源極、及置放於該晶粒之頂部之一第一汲極引線指狀件與一第二汲極引線指狀件，其中一第一閘極引線指狀件與該第一半導體晶片之該閘極接觸元件連接，該第一汲極引線指狀件與該第一半導體晶片之該複數個汲極接觸元件連接，一第二閘極引線指狀件與該第二半導體晶片之該閘極接觸元件連接，該第二汲極引線指狀件與該第二半導體晶片之該複數個汲極接觸元件連接，及一共同源極引線指狀件與該等第一及第二半導體晶片之該複數個源極接觸元件連接。
  30. 一種半導體功率晶片，其包括：一半導體晶粒，其具有形成於該半導體晶粒之一磊晶層中之一功率器件及一金屬層結構形成於該磊晶層之頂部；至少一第一接觸元件；複數個第二接觸元件與複數個第三接觸元件，其等配置於該半導體晶粒之頂部，其中該金屬層結構以該磊晶層中之主動區域連接該至少一第一接觸元件、該複數個第二接觸元件與該複數個第三接觸元件，且該至少一第一接觸元件、該複數個第二接觸元件與該複數個第三接觸元件經組態以提供該半導體功率晶片之外部連接；一絕緣層，其安置於該半導體晶粒之頂部，其中該絕緣層覆蓋該至少一第一接觸元件、該複數個第二接觸元件與該複數個第三接觸元件，且其中該絕緣層經圖案化而提供開口以接達該複數個第二接觸元件與該複數個第三接觸元件及該至少一第一接觸元件。
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