TWI635560B - Holding device, inspection device, inspection method, resin packaging device, Resin encapsulation method and method of manufacturing resin package - Google Patents
Holding device, inspection device, inspection method, resin packaging device, Resin encapsulation method and method of manufacturing resin package Download PDFInfo
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- TWI635560B TWI635560B TW106137992A TW106137992A TWI635560B TW I635560 B TWI635560 B TW I635560B TW 106137992 A TW106137992 A TW 106137992A TW 106137992 A TW106137992 A TW 106137992A TW I635560 B TWI635560 B TW I635560B
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- 239000011347 resin Substances 0.000 title claims abstract description 163
- 229920005989 resin Polymers 0.000 title claims abstract description 163
- 238000007689 inspection Methods 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000005538 encapsulation Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000004806 packaging method and process Methods 0.000 title description 7
- 230000007246 mechanism Effects 0.000 claims abstract description 96
- 238000003825 pressing Methods 0.000 claims abstract description 75
- 238000007789 sealing Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims description 478
- 238000006073 displacement reaction Methods 0.000 claims description 61
- 239000012212 insulator Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000005086 pumping Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 description 47
- 235000012431 wafers Nutrition 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 16
- 238000003860 storage Methods 0.000 description 13
- 230000007723 transport mechanism Effects 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 239000004696 Poly ether ether ketone Substances 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 229920002530 polyetherether ketone Polymers 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 Ether ketone Chemical class 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Supply And Installment Of Electrical Components (AREA)
Abstract
本發明提供保持裝置、檢查裝置、檢查方法、樹脂封裝裝置、樹脂封裝方法及樹脂封裝品的製造方法，其即使對已變形的對象也通過矯正對象的變形而將該對象穩定地保持在工作臺上。保持裝置(1)具備：工作臺(2)，用於載置對象(11)；多個抽吸孔(3)，設置在工作臺(2)上且用於抽吸對象(11)；密封件(10)，設置在工作臺(2)上且包圍多個抽吸孔(3)的周圍；按壓部件(7)；在配置有密封件(10)的位置上，將對象(11)的周圍按壓到工作臺(2)上；和減壓機構(6)，與多個抽吸孔(3)連接。 The present invention provides a holding device, an inspection device, an inspection method, a resin encapsulation device, a resin encapsulation method, and a method of manufacturing a resin package, which stably hold the object on a workbench by deforming the object to be corrected even if the object to be deformed is deformed on. The holding device (1) comprises: a table (2) for placing the object (11); a plurality of suction holes (3), which are arranged on the table (2) and used for sucking the object (11); a member (10) disposed on the table (2) and surrounding the plurality of suction holes (3); a pressing member (7); at a position where the sealing member (10) is disposed, the object (11) Pressed around the table (2); and the pressure reducing mechanism (6) is connected to the plurality of suction holes (3).
Description
本發明有關於一種保持裝置、檢查裝置、檢查方法、樹脂封裝裝置、樹脂封裝方法及樹脂封裝品的製造方法。 The present invention relates to a holding device, an inspection device, an inspection method, a resin packaging device, a resin packaging method, and a method of manufacturing a resin package.
近年來，對經樹脂封裝的封裝後基板(包含經樹脂封裝的封裝後晶圓)等所要求的精度(尺寸精度等)不斷提高。因此，通過在樹脂封裝之前或樹脂封裝之後(或者，在樹脂封裝之前和之後)保持基板(包含晶圓)等而進行測量等的方法不斷增加。 In recent years, the precision (dimensional accuracy, etc.) required for a resin-encapsulated packaged substrate (including a resin-encapsulated packaged wafer) has been increasing. Therefore, methods for performing measurement or the like by holding a substrate (including a wafer) or the like before or after resin encapsulation (or before and after resin encapsulation) are increasing.
在專利文獻1中記載有利用多個抽吸孔來抽吸基板的保持裝置。 Patent Document 1 describes a holding device that suctions a substrate by using a plurality of suction holes.
專利文獻1：日本專利公開2007-201275號公報 Patent Document 1: Japanese Patent Publication No. 2007-201275
但是，例如在樹脂封裝之前將電子部件等搭載在基板上的情況下，因該搭載而存在基板彎曲(歪斜或翹曲)的情況。 However, for example, when an electronic component or the like is mounted on a substrate before resin encapsulation, the substrate may be bent (warped or warped) by the mounting.
另外，在樹脂封裝之後，樹脂封裝後基板從成型模取出後經冷卻而收縮時，因基板與封裝樹脂之間的熱膨脹係數(線性膨脹係數)的差異而存在基板彎曲的情況。 Further, after the resin is packaged, when the resin-encapsulated substrate is taken out from the molding die and then cooled and contracted, the substrate may be bent due to a difference in thermal expansion coefficient (linear expansion coefficient) between the substrate and the encapsulating resin.
在習知的專利文獻1中記載的保持裝置存在如下問題：當基板彎曲時，不能穩定地保持基板。以下，在本發明中有時會將“基板彎曲”、“基板歪斜”和“基板翹曲”等情況涵蓋而表述為“基板變形”。 The holding device described in the patent document 1 has a problem that the substrate cannot be stably held when the substrate is bent. Hereinafter, in the present invention, "substrate bending", "substrate skew", and "substrate warpage" may be covered and described as "substrate deformation".
為瞭解決上述問題，本發明所有關的保持裝置包括：工作臺，用於載置對象；多個抽吸孔，設置在所述工作臺上且用於抽吸所述對象；密封件，設置在所述工作臺上且包圍所述多個抽吸孔的周圍；按壓部件，在配置有所述密封件的位置上，將所述對象的周圍按壓到所述工作臺上；以及減壓機構，與所述多個抽吸孔連接。 In order to solve the above problems, the holding device of the present invention includes: a work table for placing an object; a plurality of suction holes provided on the table and for sucking the object; a seal, setting On the table and surrounding the plurality of suction holes; a pressing member that presses the periphery of the object onto the table at a position where the seal is disposed; and a pressure reducing mechanism And connected to the plurality of suction holes.
為瞭解決上述問題，本發明所有關的檢查裝置包括：工作臺，用於載置對象；多個抽吸孔，設置在所述工作臺上且用於抽吸對象；密封件，設置在所述工作臺上且包圍所述多個抽吸孔的周圍；按壓部件，在配置有所述密封件的位置上，將所述對象的周圍按壓到所述工作臺上；減壓機構，與所述多個抽吸孔連接；以及檢查機構，在利用所述按壓部件按壓所述對象的周圍之後，利用所述減壓機構經由所述多個抽吸孔抽吸所述對象的狀態下，對所述對象進行檢查。 In order to solve the above problems, an inspection apparatus according to the present invention includes: a work table for placing an object; a plurality of suction holes provided on the work table and for sucking an object; and a sealing member disposed at the same a working table and surrounding the plurality of suction holes; a pressing member pressing the periphery of the object onto the table at a position where the sealing member is disposed; a pressure reducing mechanism a plurality of suction hole connections; and an inspection mechanism that, after pressing the periphery of the object by the pressing member, sucks the object through the plurality of suction holes by the pressure reducing mechanism, The object is inspected.
為瞭解決上述問題，本發明所有關的檢查方法包括以下步驟：在設置有多個抽吸孔和包圍所述多個抽吸孔的周圍的密封件的工作臺上載置對象；在配置有所述密封件的位置上，利用按壓部件將所述對象的周圍按壓到所述工作臺上；通過按壓所述對象的周圍，在所述工作臺與所述對象之間形成空間；通過經由所述多個抽吸孔抽吸所述空間的空氣，將所述對象拉近並緊貼在所述工作臺上；以及在使所述對象緊貼在所述工作臺上的狀態下，使用檢查機構對所述對象進行檢查。 In order to solve the above problems, the inspection method relating to the present invention includes the steps of: placing an object on a table provided with a plurality of suction holes and a seal surrounding the plurality of suction holes; Positioning the seal with the pressing member to press the periphery of the object onto the table; by pressing the periphery of the object, forming a space between the table and the object; a plurality of suction holes for drawing air of the space, drawing the object close to and adhering to the work table; and using an inspection mechanism in a state in which the object is brought into close contact with the work table Check the object.
根據本發明，即使是已變形(已彎曲、已歪斜或已翹曲)的對象，也能通過矯正對象的變形而將該對象穩定地保持在工作臺上。 According to the present invention, even an object that has been deformed (bent, skewed, or warped) can stably hold the object on the table by correcting the deformation of the object.
1、16‧‧‧保持裝置 1, 16‧‧‧ Keeping device
10、22‧‧‧密封件 10, 22‧‧‧ Seals
11‧‧‧封裝後基板 11‧‧‧Package substrate
13‧‧‧封裝樹脂 13‧‧‧Encapsulation resin
14‧‧‧間隙 14‧‧‧ gap
15‧‧‧密閉空間 15‧‧‧Confined space
17、2‧‧‧工作臺 17, 2‧‧‧ workbench
19、7‧‧‧按壓部件 19, 7‧‧‧ Pressing parts
20、8‧‧‧開口部 20, 8‧‧‧ openings
21、9‧‧‧密封用槽 21, 9‧‧‧Seal tank
23‧‧‧檢查裝置 23‧‧‧Checking device
24‧‧‧接觸位移感測器 24‧‧‧Contact Displacement Sensor
25‧‧‧半導體晶片 25‧‧‧Semiconductor wafer
26‧‧‧封裝前基板 26‧‧‧Package front substrate
27‧‧‧樹脂成型裝置 27‧‧‧Resin molding device
28‧‧‧基板供給收納模組 28‧‧‧Substrate supply and storage module
29‧‧‧檢查模組 29‧‧‧Check module
3‧‧‧抽吸孔 3‧‧‧ suction hole
30A、30B、30C‧‧‧成型模組 30A, 30B, 30C‧‧‧ molding modules
31‧‧‧樹脂供給模組 31‧‧‧Resin supply module
32‧‧‧封裝前基板供給部 32‧‧‧Package front substrate supply unit
33‧‧‧封裝後基板收納部 33‧‧‧Package rear substrate storage unit
34‧‧‧基板載置部 34‧‧‧Substrate Placement Department
35‧‧‧基板運送機構 35‧‧‧Substrate transport agency
36‧‧‧下模 36‧‧‧下模
37‧‧‧型腔 37‧‧‧ cavity
38‧‧‧離型膜供給機構 38‧‧‧ Release film supply mechanism
39‧‧‧合模機構 39‧‧‧Molding mechanism
4、12、18‧‧‧基板 4,12,18‧‧‧substrate
40‧‧‧X-Y工作臺 40‧‧‧X-Y Workbench
41‧‧‧樹脂收容部 41‧‧‧Resin containment department
42‧‧‧樹脂材料投入機構 42‧‧‧Resin material input organization
43‧‧‧樹脂運送機構 43‧‧‧Resin transport agency
44‧‧‧離型膜 44‧‧‧ release film
45‧‧‧上模 45‧‧‧上模
46‧‧‧樹脂材料 46‧‧‧Resin materials
47‧‧‧流動性樹脂 47‧‧‧Liquid resin
48‧‧‧硬化樹脂 48‧‧‧ hardened resin
5‧‧‧管道 5‧‧‧ Pipes
6‧‧‧減壓機構 6‧‧‧Relief mechanism
A‧‧‧密閉空間所占的面積 A‧‧‧Area occupied by confined space
P1、P2、P3、P4、P5、P6‧‧‧規定位置 P1, P2, P3, P4, P5, P6‧‧‧ specified positions
h1、h2、h3、h4、h5、h6‧‧‧高度位置 H1, h2, h3, h4, h5, h6‧‧‧ height position
CTL‧‧‧控制部 CTL‧‧‧Control Department
S1、R1、M1、C1、E1‧‧‧規定位置 S1, R1, M1, C1, E1‧‧‧ specified position
第1圖是表示實施方式1的保持裝置的示意圖，(a)是俯視圖，(b)是A-A線剖視圖。 Fig. 1 is a schematic view showing a holding device according to a first embodiment, wherein (a) is a plan view and (b) is a cross-sectional view taken along line A-A.
第2圖的(a)至(c)是表示在實施方式1中將封裝後基板吸附並緊貼在工作臺上的過程的示意性剖視圖。 (a) to (c) of Fig. 2 are schematic cross-sectional views showing a process of adsorbing and adhering the packaged substrate to the stage in the first embodiment.
第3圖是表示實施方式2的保持裝置的示意圖，(a)是俯視圖，(b)是B-B線剖視圖。 Fig. 3 is a schematic view showing a holding device according to a second embodiment, wherein (a) is a plan view and (b) is a cross-sectional view taken along line B-B.
第4圖的(a)至(b)是表示在實施方式3中對封裝後基板所具有的基板的厚度進行測量的過程的示意性剖視圖。 (a) to (b) of FIG. 4 are schematic cross-sectional views showing a process of measuring the thickness of the substrate which the packaged substrate has in the third embodiment.
第5圖的(a)至(b)是表示在實施方式4中對封裝後基板所具有的封裝樹脂的厚度進行測量的過程的示意性剖視圖。 (a) to (b) of FIG. 5 are schematic cross-sectional views showing a process of measuring the thickness of the encapsulating resin which the packaged substrate has in the fourth embodiment.
第6圖的(a)至(c)是表示在實施方式5中對封裝後基板所具有的基板及封裝樹脂的厚度分別進行測量的過程的示意性剖視圖。 (a) to (c) of FIG. 6 are schematic cross-sectional views showing a process of measuring the thicknesses of the substrate and the encapsulating resin which are included in the packaged substrate, respectively, in the fifth embodiment.
第7圖是表示在實施方式6中具備檢查裝置的樹脂成型裝置的大致結構的俯視圖。 Fig. 7 is a plan view showing a schematic configuration of a resin molding apparatus including an inspection device in a sixth embodiment.
第8圖的(a)至(d)是表示使用實施方式6的樹脂成型裝置進行樹脂封裝的過程的示意性剖視圖。 (a) to (d) of Fig. 8 are schematic cross-sectional views showing a process of performing resin encapsulation using the resin molding apparatus of the sixth embodiment.
下面，參照圖式對本發明所有關的實施方式進行說明。本發明的任一幅圖為了易於理解均進行適當省略或誇張以示意性地繪製。對相同的結構要素使用相同的圖式標記，並適當省略說明。此外，在本發明中，“對象”中包含基板及在基板上形成有絕緣體或導電體等的複合體。“基板”中包含玻璃環氧層壓板、印刷基板、玻璃基板和金屬基板等一般基板和半導體晶圓等。“樹脂封裝品”為經樹脂封裝的對象，包含後述的封裝後基板。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Any of the figures of the present invention are appropriately omitted or exaggerated for ease of understanding to be schematically drawn. The same structural elements are denoted by the same reference numerals, and the description is omitted as appropriate. Further, in the present invention, the "object" includes a substrate and a composite body in which an insulator, a conductor, or the like is formed on the substrate. The "substrate" includes a general substrate such as a glass epoxy laminate, a printed substrate, a glass substrate, and a metal substrate, and a semiconductor wafer. The "resin package" is a resin-encapsulated object and includes a packaged substrate to be described later.
[實施方式1] [Embodiment 1]
(保持裝置的結構) (maintaining the structure of the device)
參照第1圖對本發明所有關的保持裝置的結構進行說明。保持裝置為通過真空吸附將對象緊貼並保持在工作臺上的保持裝置。待保持對象為基板或在基板上形成有絕緣體或金屬等的複合體。在實施方式1中表示將具有矩形形狀的基板作為對象而緊貼並保持在工作臺上的例。作為基板，例如可使用玻璃環氧層壓板、印刷基板、陶瓷基板和引線框等。或者，可使用在這些基板上成型有封裝樹脂的封裝後基板等。 The structure of the holding device according to the present invention will be described with reference to Fig. 1. The holding device is a holding device that holds and holds the object on the table by vacuum suction. The object to be held is a substrate or a composite body of an insulator or a metal is formed on the substrate. In the first embodiment, an example in which a substrate having a rectangular shape is brought into close contact with and held on a table is shown. As the substrate, for example, a glass epoxy laminate, a printed substrate, a ceramic substrate, a lead frame, or the like can be used. Alternatively, a packaged substrate or the like on which the encapsulating resin is formed on these substrates can be used.
如第1圖的(a)所示，保持裝置1具備用於載置基板的工作臺2和設置在工作臺2上的多個抽吸孔3。在工作臺2上以格子狀形成有多個抽吸孔3。在第1圖中，沿長邊方向形成有十個抽吸孔3，並且沿短邊方向形成有五個抽吸孔3。因此，在工作臺2上總共形成有50個抽吸孔3。如第1圖的(b)所示，各個抽吸孔3從工作臺2的表面貫通至背面。可以與待保持的基板4(圖中用雙點劃線表示的部分)的大小及基板4的變形狀態(例如，基板的歪斜或翹曲狀態)等對應地任意設定抽吸孔3的數量。多個抽吸孔3經由與各個抽吸孔3相連的管道5被連接到減壓機構6。作為減壓機構6，例如可使用真空泵等。 As shown in (a) of FIG. 1, the holding device 1 includes a table 2 on which a substrate is placed, and a plurality of suction holes 3 provided on the table 2. A plurality of suction holes 3 are formed in a lattice shape on the table 2. In Fig. 1, ten suction holes 3 are formed along the longitudinal direction, and five suction holes 3 are formed along the short side direction. Therefore, a total of 50 suction holes 3 are formed on the table 2. As shown in FIG. 1(b), each of the suction holes 3 penetrates from the surface of the table 2 to the back surface. The number of the suction holes 3 can be arbitrarily set corresponding to the size of the substrate 4 to be held (the portion indicated by a chain double-dashed line in the drawing) and the deformation state of the substrate 4 (for example, the skewed or warped state of the substrate). A plurality of suction holes 3 are connected to the pressure reducing mechanism 6 via pipes 5 connected to the respective suction holes 3. As the pressure reducing mechanism 6, for example, a vacuum pump or the like can be used.
在保持裝置1中，與基板4的形狀及大小對應地設置有用於將基板4的周圍按壓到工作臺2上的按壓部件7。按壓部件7例如由沿上下方向具有開口部8的框狀部件構造。按壓部件7為只按壓基板4的周圍而不按壓基板4的中央部等的按壓部件。按壓部件7通過設置於保持裝置1的驅動機構(未圖示)來升降。作為按壓部件7，優選使用抑制施加給基板4的機械損傷的材料。例如可使用聚醚 醚酮(PEEK：Poly Ether Ether Ketone)等。也可以在按壓部件7的底面上設置緩衝部件或彈性部件等。 In the holding device 1, a pressing member 7 for pressing the periphery of the substrate 4 onto the table 2 is provided corresponding to the shape and size of the substrate 4. The pressing member 7 is configured by, for example, a frame-shaped member having an opening 8 in the vertical direction. The pressing member 7 is a pressing member that presses only the periphery of the substrate 4 without pressing the center portion of the substrate 4 or the like. The pressing member 7 is raised and lowered by a driving mechanism (not shown) provided in the holding device 1. As the pressing member 7, it is preferable to use a material that suppresses mechanical damage applied to the substrate 4. For example, polyether can be used Ether ketone (PEEK: Poly Ether Ether Ketone) and the like. A cushioning member, an elastic member, or the like may be provided on the bottom surface of the pressing member 7.
如第1圖的(b)所示，在工作臺2上設置有包圍多個抽吸孔3的周圍的密封用槽9。在密封用槽9中配置有例如O型圈等密封件10。以密封件10的上部從工作臺2的表面突出的方式配置密封件10。作為密封件10，優選使用矽橡膠或氟橡膠等。優選密封件10為具有適度的硬度且易伸張的材質。 As shown in FIG. 1(b), the table 2 is provided with a sealing groove 9 that surrounds the plurality of suction holes 3. A seal 10 such as an O-ring is disposed in the sealing groove 9. The sealing member 10 is disposed in such a manner that an upper portion of the sealing member 10 protrudes from the surface of the table 2. As the sealing member 10, ruthenium rubber, fluororubber or the like is preferably used. Preferably, the sealing member 10 is a material having a moderate hardness and being easily stretchable.
在配置有密封件10的位置的上方配置有框狀的按壓部件7。俯視時，密封件10被包圍在框狀的按壓部件7的內部。如第1圖的(a)所示，在將按壓部件7和密封件10重疊的狀態繪製為俯視圖的情況下，密封件10被完全包圍在按壓部件7中。因此，雖然在後面描述，如第2圖的(b)所示，在由配置在工作臺2上的密封件10和按壓部件7夾持基板4(在第2圖中為封裝後基板11)的周邊的狀態下，該基板4的周邊被按壓到工作臺2上。 A frame-shaped pressing member 7 is disposed above the position where the seal 10 is disposed. The sealing member 10 is enclosed inside the frame-shaped pressing member 7 in plan view. As shown in FIG. 1( a ), when the state in which the pressing member 7 and the sealing member 10 are superimposed is a plan view, the sealing member 10 is completely surrounded by the pressing member 7 . Therefore, as will be described later, as shown in FIG. 2(b), the substrate 4 is sandwiched by the sealing member 10 and the pressing member 7 disposed on the table 2 (in the second drawing, the packaged substrate 11) In the peripheral state, the periphery of the substrate 4 is pressed onto the table 2.
(保持裝置的操作) (maintaining device operation)
參照第1圖至第2圖，對保持裝置1中將對象緊貼並保持在工作臺2上的操作進行說明。在第2圖中，對將例如在基板上成型有封裝樹脂的封裝後基板作為對象而緊貼並保持在工作臺2上的例進行說明。 The operation of holding and holding the object on the table 2 in the holding device 1 will be described with reference to Figs. 1 to 2 . In the second drawing, an example in which a packaged substrate on which a sealing resin is molded on a substrate is adhered to and held on the table 2 will be described.
首先，如第2圖的(a)所示，將封裝後基板11載置在工作臺2的規定位置上。封裝後基板11具有：基板12，例如由印刷基板或引線框等構成；和多個晶片狀部件(未圖示)，被安裝在基板12所具有的多個區域中；和封裝樹脂13，以一併覆蓋多個區域的方式成型。如果基板12的熱膨脹係數與封裝樹脂13的熱膨脹係數之差較大，則在從成型模中取出封裝後基板11並將該封裝後基板11置於比成型溫度更低的常溫狀態時，會存在封裝後基板11變形的情況。在第2圖 中，作為封裝後基板11變形的例，示出產生了例如向封裝後基板11的表面側(成型有封裝樹脂13的側)凸出這樣的翹曲的例。 First, as shown in FIG. 2(a), the packaged substrate 11 is placed on a predetermined position of the table 2. The packaged substrate 11 has a substrate 12 composed of, for example, a printed substrate or a lead frame, and a plurality of wafer-shaped members (not shown) mounted in a plurality of regions of the substrate 12; and an encapsulating resin 13 Formed by covering multiple areas together. If the difference between the thermal expansion coefficient of the substrate 12 and the thermal expansion coefficient of the encapsulating resin 13 is large, there is a case where the packaged substrate 11 is taken out from the molding die and the packaged substrate 11 is placed at a lower temperature than the molding temperature. The case where the substrate 11 is packaged after the package is deformed. In Figure 2 In the example in which the packaged substrate 11 is deformed, for example, an example in which warpage is caused to protrude toward the surface side of the packaged substrate 11 (the side on which the sealing resin 13 is molded) is generated.
如第2圖的(a)所示，如果將產生了向表面側凸出這樣的翹曲的封裝後基板11載置在工作臺2上，則封裝後基板11和工作臺2不會緊貼，而是在封裝後基板11與工作臺2之間產生間隙14。如果該間隙14較大，則即使利用減壓機構6抽吸封裝後基板11，抽吸力也較弱，有可能不能將封裝後基板11吸附到工作臺2上。另外，即使利用減壓機構6抽吸封裝後基板11，如果在封裝後基板11與工作臺2之間產生空氣洩漏，則也有可能不能將封裝後基板11充分吸附到工作臺2上。在具有大面積的封裝後基板11中，該現象特別明顯。所謂“不能將封裝後基板11吸附到工作臺2上”是指不能將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11與工作臺2緊貼。 As shown in (a) of FIG. 2, if the packaged substrate 11 having the warpage which is convex toward the front side is placed on the table 2, the packaged substrate 11 and the table 2 are not in close contact with each other. Instead, a gap 14 is created between the packaged substrate 11 and the table 2. If the gap 14 is large, even if the packaged substrate 11 is sucked by the pressure reducing mechanism 6, the suction force is weak, and the packaged substrate 11 may not be adsorbed onto the table 2. Further, even if the packaged substrate 11 is sucked by the pressure reducing mechanism 6, if air leakage occurs between the substrate 11 and the table 2 after the package, the packaged substrate 11 may not be sufficiently adsorbed onto the table 2. This phenomenon is particularly noticeable in the packaged substrate 11 having a large area. The phrase "the packaged substrate 11 cannot be adsorbed onto the table 2" means that the warpage of the packaged substrate 11 cannot be corrected to be flat, and the packaged substrate 11 and the table 2 are brought into close contact with each other.
接著，如第2圖的(b)所示，使用設置於保持裝置1的驅動機構(未圖示)來使按壓部件7從規定位置下降。使按壓部件7的底面與封裝後基板11的周圍接觸，並利用按壓部件7使封裝後基板11的周圍緊貼在密封件10上。在使封裝後基板11的周圍緊貼在密封件10上的狀態下，進一步按壓封裝後基板11。由此，能夠經由密封件10在封裝後基板11與工作臺2之間形成經密閉的密閉空間15。因此，能防止空氣從形成于封裝後基板11與工作臺2之間的密閉空間15向外部洩漏。在該狀態下，經由密封件10在封裝後基板11與工作臺2之間形成經密閉的密閉空間15很重要，封裝後基板11的周圍也未必需要與工作臺2緊貼。 Next, as shown in FIG. 2(b), the pressing member 7 is lowered from the predetermined position by using a driving mechanism (not shown) provided in the holding device 1. The bottom surface of the pressing member 7 is brought into contact with the periphery of the package back substrate 11, and the periphery of the packaged substrate 11 is brought into close contact with the sealing member 10 by the pressing member 7. The packaged substrate 11 is further pressed in a state in which the periphery of the packaged substrate 11 is brought into close contact with the sealing member 10. Thereby, the sealed sealed space 15 can be formed between the package substrate 11 and the table 2 via the sealing material 10. Therefore, it is possible to prevent air from leaking to the outside from the sealed space 15 formed between the packaged substrate 11 and the table 2. In this state, it is important to form the sealed sealed space 15 between the packaged substrate 11 and the table 2 via the sealing member 10, and the periphery of the packaged substrate 11 does not necessarily need to be in close contact with the table 2.
接著，如第2圖的(c)所示，在利用按壓部件7且經由密封件10將封裝後基板11的周圍按壓到工作臺2上的狀態下，利用減壓機構6來抽吸形成在封裝後基板11與工作臺2之間的密閉空間15中存在的空氣。通過抽吸密閉空間15中 存在的空氣，密閉空間15內的壓力從大氣壓變為負壓(真空)。由於密閉空間15內的壓力變為小於大氣壓，由大氣壓產生將封裝後基板11按壓到工作臺2上的力。換言之，通過減壓機構6抽吸封裝後基板11，封裝後基板11被拉近工作臺2。由此，能夠將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11緊貼在工作臺2上。通過經由多個抽吸孔3抽吸封裝後基板11，能夠將封裝後基板11保持在緊貼於工作臺2上的狀態。 Then, as shown in FIG. 2(c), in the state where the periphery of the packaged substrate 11 is pressed against the table 2 via the sealing member 7 by the pressing member 7, the pressure reducing mechanism 6 is used to suction and form The air present in the sealed space 15 between the rear substrate 11 and the table 2 is encapsulated. By suctioning the confined space 15 The air present, the pressure in the closed space 15 is changed from atmospheric pressure to negative pressure (vacuum). Since the pressure in the sealed space 15 becomes less than atmospheric pressure, the force that presses the packaged substrate 11 onto the table 2 is generated by the atmospheric pressure. In other words, the packaged substrate 11 is sucked by the pressure reducing mechanism 6, and the packaged substrate 11 is pulled closer to the table 2. Thereby, the warpage of the packaged substrate 11 can be corrected to be flat, and the packaged substrate 11 can be brought into close contact with the table 2 . By sucking the packaged substrate 11 through the plurality of suction holes 3, the packaged substrate 11 can be held in a state of being in close contact with the table 2.
如第2圖的(b)所示，形成于封裝後基板11與工作臺2之間的密閉空間15所占的面積相當於真空抽吸面積(受壓面積)。具體而言，第2圖的(b)的A所示區域中的空間區域的面積、即未與工作臺2接觸的封裝後基板11的基板12側的表面積相當於受壓面積。該受壓面積越大，則由大氣壓受到的力越大，並且將封裝後基板11抽吸到工作臺2上的抽吸力越大。因此，即使在封裝後基板11的面積較大的情況下，或者封裝後基板11的翹曲較大的情況下，也能將封裝後基板11的翹曲矯正為平坦狀而保持封裝後基板11緊貼在工作臺2上的狀態。 As shown in FIG. 2(b), the area occupied by the sealed space 15 formed between the packaged substrate 11 and the table 2 corresponds to the vacuum suction area (pressure receiving area). Specifically, the area of the spatial region in the region indicated by A in FIG. 2( b ), that is, the surface area on the substrate 12 side of the packaged substrate 11 that is not in contact with the stage 2 corresponds to the pressure receiving area. The larger the pressure receiving area, the greater the force received by the atmospheric pressure, and the greater the suction force for drawing the packaged substrate 11 onto the table 2. Therefore, even in the case where the area of the substrate 11 after packaging is large, or the warpage of the substrate 11 after packaging is large, the warpage of the packaged substrate 11 can be corrected to be flat to maintain the packaged substrate 11 The state of being close to the workbench 2.
(作用效果) (Effect)
在本實施方式中，保持裝置1為包括如下構件的結構：工作臺2，用於載置作為對象的封裝後基板11；多個抽吸孔3，設置在工作臺2上且用於抽吸封裝後基板11；密封件10，設置在工作臺2上且包圍多個抽吸孔3的周圍；按壓部件7，在配置有密封件10的位置上，將封裝後基板11的周圍按壓到工作臺2上；和減壓機構6，與多個抽吸孔3連接。 In the present embodiment, the holding device 1 is configured to include a table 2 for placing the packaged substrate 11 as a target, and a plurality of suction holes 3 provided on the table 2 for suction The rear substrate 11 is sealed; the sealing member 10 is disposed on the table 2 and surrounds the plurality of suction holes 3; and the pressing member 7 presses the periphery of the packaged substrate 11 to work at a position where the sealing member 10 is disposed. The table 2 is connected to the plurality of suction holes 3 and the pressure reducing mechanism 6.
根據這種結構，通過在封裝後基板11與工作臺2之間形成密閉空間15，並抽吸密閉空間15中存在的空氣來將封裝後基板11拉近並緊貼在工作臺2 上。因此，能夠將封裝後基板11的翹曲矯正為平坦狀而保持封裝後基板11緊貼在工作臺2上的狀態。 According to this configuration, by forming the sealed space 15 between the packaged substrate 11 and the table 2, and sucking the air present in the sealed space 15, the packaged substrate 11 is brought close to and close to the table 2 on. Therefore, the warpage of the packaged substrate 11 can be corrected to be flat, and the state in which the packaged substrate 11 is in close contact with the table 2 can be maintained.
根據本實施方式，在保持裝置1中的工作臺2上設置有：多個抽吸孔3，用於抽吸作為對象的封裝後基板11；和密封件10，用於包圍抽吸孔3的周圍。在配置有密封件10的位置上設置有按壓部件7，該按壓部件7用於將封裝後基板11的周圍按壓到工作臺2上。即使在封裝後基板11上產生翹曲的情況下，通過由按壓部件7按壓封裝後基板11的周圍，也能經由密封件10在封裝後基板11與工作臺2之間形成經密閉的密閉空間15。 According to the present embodiment, the table 2 in the holding device 1 is provided with a plurality of suction holes 3 for sucking the packaged rear substrate 11 as a target, and a sealing member 10 for surrounding the suction holes 3. around. At a position where the seal 10 is disposed, a pressing member 7 for pressing the periphery of the packaged substrate 11 onto the table 2 is provided. Even when warpage occurs on the packaged substrate 11, by pressing the periphery of the packaged substrate 11 by the pressing member 7, a sealed sealed space can be formed between the packaged substrate 11 and the table 2 via the sealing member 10. 15.
在該狀態下，使用減壓機構6抽吸密閉空間15中存在的空氣。由此，密閉空間15內的壓力變為小於大氣壓，並由大氣壓產生將封裝後基板11按壓到工作臺2上的力。通過減壓機構6對封裝後基板11的抽吸，封裝後基板11被拉近並緊貼在工作臺2上。因此，能夠將封裝後基板11的翹曲矯正為平坦狀而保持封裝後基板11緊貼在工作臺2上的狀態。 In this state, the air present in the sealed space 15 is sucked by the pressure reducing mechanism 6. Thereby, the pressure in the sealed space 15 becomes less than atmospheric pressure, and the force which presses the package substrate 11 to the table 2 is generated by atmospheric pressure. After the suction of the packaged substrate 11 by the pressure reducing mechanism 6, the packaged substrate 11 is brought close to and adhered to the table 2. Therefore, the warpage of the packaged substrate 11 can be corrected to be flat, and the state in which the packaged substrate 11 is in close contact with the table 2 can be maintained.
根據本實施方式，通過抽吸形成于封裝後基板11與工作臺2之間的密閉空間15中存在的空氣，使封裝後基板11緊貼在工作臺2上。由於密閉空間15所占的面積相當於真空受壓面積，因此密閉空間15所占的面積越大則用於將封裝後基板11抽吸到工作臺2上的抽吸力越大。因此，即使在封裝後基板11的面積較大的情況下，或者在封裝後基板11的翹曲較大的情況下，也能通過將封裝後基板11的翹曲矯正為平坦狀而保持封裝後基板11緊貼在工作臺2上的狀態。 According to the present embodiment, the air existing in the sealed space 15 formed between the packaged substrate 11 and the table 2 is sucked, and the packaged substrate 11 is brought into close contact with the table 2. Since the area occupied by the sealed space 15 corresponds to the vacuum pressure receiving area, the larger the area occupied by the sealed space 15, the larger the suction force for sucking the packaged substrate 11 onto the table 2. Therefore, even in the case where the area of the substrate 11 after the package is large, or in the case where the warpage of the substrate 11 after the package is large, the warpage of the packaged substrate 11 can be corrected to be flat to maintain the package. The substrate 11 is in a state of being in close contact with the table 2.
在本實施方式中，由大氣壓產生將封裝後基板11按壓到工作臺2上的力。由此，通過將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11緊貼在工作臺2上。在該情況下，也可以通過緩和按壓部件7的按壓力或者對密封 件10採用易滑材質等來使封裝後基板11在密封件10上滑動。由此，能夠防止矯正封裝後基板11的翹曲時產生的封裝後基板11的破損。 In the present embodiment, the force that presses the packaged substrate 11 onto the table 2 is generated by atmospheric pressure. Thereby, the packaged substrate 11 is brought into close contact with the table 2 by correcting the warpage of the packaged substrate 11 to a flat shape. In this case, it is also possible to relax the pressing force of the pressing member 7 or to seal it. The member 10 is made of a slippery material or the like to slide the packaged substrate 11 over the sealing member 10. Thereby, it is possible to prevent damage of the packaged substrate 11 which is generated when the warpage of the packaged substrate 11 is corrected.
[實施方式2] [Embodiment 2]
(保持裝置的結構) (maintaining the structure of the device)
參照第3圖，對實施方式2的保持裝置進行說明。如第3圖所示，保持裝置16為用於使具有圓形形狀的基板(對象)緊貼並保持在工作臺上的保持裝置。作為基板，可使用晶圓或在晶圓上成型有封裝樹脂的晶圓級封裝等。 The holding device of the second embodiment will be described with reference to Fig. 3 . As shown in Fig. 3, the holding device 16 is a holding device for bringing a substrate (object) having a circular shape into close contact with and holding it on a table. As the substrate, a wafer or a wafer level package in which a sealing resin is formed on a wafer or the like can be used.
如第3圖的(a)所示，保持裝置16包括用於載置圓形基板的工作臺17和設置於工作臺17的多個抽吸孔3。在工作臺17上例如以圓周狀形成有多個抽吸孔3。可以與待保持的基板18(圖中用雙點劃線表示的部分)的大小及基板18的變形狀態(基板的歪斜或翹曲等狀態)等對應地任意設定抽吸孔3的數量。多個抽吸孔3經由與各個抽吸孔3相連的管道5被連接到減壓機構6。作為減壓機構6，可使用真空泵等。 As shown in (a) of FIG. 3, the holding device 16 includes a table 17 on which a circular substrate is placed and a plurality of suction holes 3 provided in the table 17. A plurality of suction holes 3 are formed in the table 17, for example, in a circumferential shape. The number of the suction holes 3 can be arbitrarily set in accordance with the size of the substrate 18 to be held (the portion indicated by a chain double-dashed line in the drawing) and the state of deformation of the substrate 18 (a state in which the substrate is skewed or warped). A plurality of suction holes 3 are connected to the pressure reducing mechanism 6 via pipes 5 connected to the respective suction holes 3. As the pressure reducing mechanism 6, a vacuum pump or the like can be used.
與實施方式1同樣地，在保持裝置16中，與基板18的大小對應地設置有用於將基板18的周圍按壓到工作臺17上的按壓部件19。按壓部件19由沿上下方向具有開口部20的圓板狀部件構造。作為按壓部件19，可使用聚醚醚酮(PEEK：Poly Ether Ether Ketone)等。也可以在按壓部件19的底面上設置緩衝部件或彈性部件等。按壓部件19通過設置於保持裝置16的驅動機構(未圖示)來升降。 Similarly to the first embodiment, in the holding device 16, a pressing member 19 for pressing the periphery of the substrate 18 onto the table 17 is provided corresponding to the size of the substrate 18. The pressing member 19 is configured by a disk-shaped member having an opening 20 in the vertical direction. As the pressing member 19, polyetheretherketone (PEEK: Poly Ether Ether Ketone) or the like can be used. A cushioning member, an elastic member, or the like may be provided on the bottom surface of the pressing member 19. The pressing member 19 is raised and lowered by a driving mechanism (not shown) provided in the holding device 16.
如第3圖的(b)所示，在工作臺17上設置有包圍多個抽吸孔3的周圍的密封用槽21。在密封用槽21中配置有例如O型圈等密封件22。因此，在由被配 置在工作臺17上的密封件22和按壓部件19夾持基板18的周邊的狀態下，該基板18的周邊被按壓到工作臺17上。 As shown in FIG. 3(b), the table 17 is provided with a sealing groove 21 that surrounds the plurality of suction holes 3. A seal 22 such as an O-ring is disposed in the sealing groove 21 . Therefore, it is matched The periphery of the substrate 18 is pressed against the table 17 in a state in which the sealing member 22 placed on the table 17 and the pressing member 19 sandwich the periphery of the substrate 18.
可以將例如矽晶圓或化合物半導體晶圓等的晶圓、或者以晶圓狀態被樹脂封裝的晶圓級封裝件等作為基板18而保持在工作臺17上。在這些情況下，將如與晶圓的口徑對應地按壓晶圓周圍的圓環狀按壓部件設置在保持裝置16中即可。 A wafer such as a germanium wafer or a compound semiconductor wafer, or a wafer-level package in which a resin is packaged in a wafer state can be held as a substrate 18 on the stage 17. In these cases, the annular pressing member around the wafer may be placed in the holding device 16 in accordance with the diameter of the wafer.
在本實施方式中，在工作臺17上以圓周狀形成有多個抽吸孔3。不限於此，可以任意設定多個抽吸孔3的位置。例如，也可以在半導體前工序中的製造工序結束之後，以與晶圓被分割而單片化的各個晶片區域對應的方式形成有抽吸孔3。 In the present embodiment, a plurality of suction holes 3 are formed in a circumferential shape on the table 17. Not limited to this, the positions of the plurality of suction holes 3 can be arbitrarily set. For example, after the manufacturing process in the pre-semiconductor process is completed, the suction holes 3 may be formed so as to correspond to the respective wafer regions in which the wafer is divided and singulated.
由於保持裝置16的操作與實施方式1所示的保持裝置1的操作相同，因此省略說明。保持裝置16實現與實施方式1所示的保持裝置1同樣的效果。 Since the operation of the holding device 16 is the same as the operation of the holding device 1 shown in the first embodiment, the description thereof will be omitted. The holding device 16 achieves the same effects as the holding device 1 shown in the first embodiment.
實施方式3 Embodiment 3
(檢查裝置的結構) (Check the structure of the device)
參照第4圖，對實施方式3中使用的檢查裝置進行說明。檢查裝置為在實施方式1所示的保持裝置1或實施方式2所示的保持裝置16中增加檢查機構的裝置。通過在保持裝置中增加檢查機構，能夠將保持裝置用作檢查裝置。作為檢查機構，例如增加用於測量基板厚度的機構和用於檢查基板表面狀態的結構等。由於檢查機構以外的結構及操作與實施方式1的保持裝置1或實施方式2的保持裝置16相同，因此省略說明。 The inspection apparatus used in the third embodiment will be described with reference to Fig. 4 . The inspection device is a device that adds an inspection mechanism to the holding device 1 shown in the first embodiment or the holding device 16 shown in the second embodiment. The holding device can be used as an inspection device by adding an inspection mechanism to the holding device. As the inspection mechanism, for example, a mechanism for measuring the thickness of the substrate, a structure for inspecting the surface state of the substrate, and the like are added. Since the configuration and operation other than the inspection mechanism are the same as those of the holding device 1 of the first embodiment or the holding device 16 of the second embodiment, the description thereof is omitted.
檢查裝置23為例如在保持裝置1中進一步增加接觸位移感測器、光學位移感測器或圖像處理系統等檢查機構的結構。通過設置接觸位移感測器 或光學位移感測器以作為檢查機構，能夠準確地測量緊貼並保持在工作臺2上狀態的基板的厚度。通過設置搭載有CMOS(Complementary Metal Oxide Semiconductor：互補性氧化金屬半導體)圖像感測器或CCD(Charge Coupled Device：電荷耦合元件)圖像感測器等的圖像處理系統以作為檢查機構，能夠進行基板的表面檢查、缺陷檢查和圖案檢查等。由於將基板保持在緊貼於工作臺2上的狀態，因此能夠在清除翹曲或歪斜等變形影響的狀態下進行準確的檢查。此外，也可以應用圖像識別系統來測量保持在工作臺2上的基板的厚度。作為圖像處理，可使用通過對照相機拍攝到的圖像進行二值化來進行邊緣檢測等的常規圖像處理。 The inspection device 23 is, for example, a structure in which an inspection mechanism such as a contact displacement sensor, an optical displacement sensor, or an image processing system is further added to the holding device 1. By setting the contact displacement sensor Or an optical displacement sensor as an inspection mechanism capable of accurately measuring the thickness of the substrate that is in close contact with and held on the table 2. An image processing system equipped with a CMOS (Complementary Metal Oxide Semiconductor) image sensor or a CCD (Charge Coupled Device) image sensor is provided as an inspection mechanism. Surface inspection, defect inspection, pattern inspection, and the like of the substrate are performed. Since the substrate is held in close contact with the table 2, accurate inspection can be performed in a state where the influence of deformation such as warpage or skew is removed. Further, an image recognition system can also be applied to measure the thickness of the substrate held on the table 2. As the image processing, conventional image processing such as edge detection by binarizing an image captured by the camera can be used.
在第4圖中，對例如設置接觸位移感測器以作為檢查機構的情況進行說明。如第4圖所示，檢查裝置23在工作臺2的上方具備接觸位移感測器24。接觸位移感測器24能夠借助設置於檢查裝置23的移動機構(未圖示)沿Y方向及Z方向移動。通過使用接觸位移感測器24，能夠在任意位置上測量基板的厚度。 In Fig. 4, a case where, for example, a contact displacement sensor is provided as an inspection mechanism will be described. As shown in FIG. 4, the inspection device 23 is provided with a contact displacement sensor 24 above the table 2. The contact displacement sensor 24 is movable in the Y direction and the Z direction by a moving mechanism (not shown) provided in the inspection device 23. By using the contact displacement sensor 24, the thickness of the substrate can be measured at any position.
此外，在檢查裝置23中，按壓部件7為只按壓基板的周圍而不按壓基板的中央部等的結構。即，檢查裝置23為能夠檢查在檢查中重要的封裝後基板的封裝樹脂的整個區域或封裝前基板的安裝有半導體晶片的區域的整個區域的結構。因此，接觸位移感測器24在按壓部件7所具有的開口部8沿X方向、Y方向及Z方向移動。由此，能夠在基板中的任意位置上測量基板厚度。 Further, in the inspection device 23, the pressing member 7 is configured to press only the periphery of the substrate without pressing the center portion of the substrate. That is, the inspection device 23 is configured to be able to inspect the entire region of the encapsulating resin of the packaged substrate which is important in the inspection or the entire region of the region of the pre-package substrate on which the semiconductor wafer is mounted. Therefore, the contact displacement sensor 24 moves in the X direction, the Y direction, and the Z direction in the opening portion 8 of the pressing member 7. Thereby, the substrate thickness can be measured at any position in the substrate.
在本實施方式中，檢查裝置23為不會通過按壓部件來按壓基板的中央部等的結構。由此，即使工作臺的剛性較弱，也防止因按壓基板的中央部而基板的中央部在每個工作臺上彎曲。此外，對於封裝前基板而言，防止因按壓部件而損傷半導體晶片等。 In the present embodiment, the inspection device 23 is configured such that the center portion of the substrate or the like is not pressed by the pressing member. Thereby, even if the rigidity of the table is weak, it is prevented that the center portion of the substrate is bent on each table by pressing the center portion of the substrate. Further, the pre-package substrate prevents damage to the semiconductor wafer or the like due to the pressing member.
(檢查裝置的操作) (Check the operation of the device)
參照第4圖，表示將第2圖所示的具有翹曲的封裝後基板11作為基板(對象)進行檢查的情況。在本實施方式中，對例如使用檢查裝置23來測量封裝後基板11所具有的基板12的厚度的操作進行說明。此外，在以下的實施方式中，也表示將具有翹曲的封裝後基板11作為基板進行檢查的情況。 Referring to Fig. 4, the case where the warped packaged substrate 11 shown in Fig. 2 is used as a substrate (object) is examined. In the present embodiment, an operation of measuring the thickness of the substrate 12 included in the packaged substrate 11 by using the inspection device 23 will be described. Further, in the following embodiments, the case where the warped packaged substrate 11 is inspected as a substrate is also shown.
首先，如第4圖的(a)所示，在檢查裝置23中，在工作臺2上未載置封裝後基板11的狀態下，使接觸位移感測器24下降而使其與工作臺2的規定位置P1接觸。工作臺2的規定位置P1與用於測量封裝後基板11所具有的基板12的厚度的位置P2(參照第4圖的(b))對應。在工作臺2的規定位置P1上，利用接觸位移感測器24測量工作臺面的高度位置h1。將該測量出的工作臺面的高度位置h1作為工作臺2的基準高度而存儲在記憶體等中。接觸位移感測器24上升，並在規定位置P1的上方待機。 First, as shown in FIG. 4( a ), in the inspection device 23 , the contact displacement sensor 24 is lowered and placed on the table 2 in a state where the packaged substrate 11 is not placed on the table 2 . The specified position P1 is in contact. The predetermined position P1 of the table 2 corresponds to a position P2 (see (b) of FIG. 4) for measuring the thickness of the substrate 12 included in the packaged substrate 11. At the predetermined position P1 of the table 2, the height position h1 of the work surface is measured by the contact displacement sensor 24. The height position h1 of the measured work surface is stored as a reference height of the table 2 in a memory or the like. The contact displacement sensor 24 rises and stands by above the predetermined position P1.
接著，如第4圖的(b)所示，將具有翹曲的封裝後基板11載置在工作臺2的規定位置上。接著，使按壓部件7下降而將封裝後基板11的周圍按壓到工作臺2上。由此，經由密封件，在封裝後基板11與工作臺2之間形成密閉空間15(參照第2圖)。接著，利用減壓機構6抽吸封裝後基板11，將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11緊貼並保持在工作臺2上。在該狀態下，封裝後基板11的翹曲得到矯正而被平坦地緊貼在工作臺2上。 Next, as shown in FIG. 4(b), the packaged substrate 11 having warpage is placed on a predetermined position of the table 2. Next, the pressing member 7 is lowered to press the periphery of the packaged substrate 11 onto the table 2. Thereby, a sealed space 15 is formed between the packaged substrate 11 and the table 2 via the sealing member (see FIG. 2). Next, the packaged substrate 11 is sucked by the pressure reducing mechanism 6, and the warpage of the packaged substrate 11 is corrected to be flat, and the packaged substrate 11 is brought into close contact with and held on the table 2. In this state, the warpage of the packaged substrate 11 is corrected and is flatly adhered to the table 2.
接著，接觸位移感測器24下降並與封裝後基板11所具有的基板12的規定位置P2接觸。在基板12的規定位置P2上，利用接觸位移感測器24測量基板12的高度位置h2。由於封裝後基板11平坦地緊貼並保持在工作臺2上，因此能夠準確地測量基板12的高度位置h2。求出該測量出的基板12的高度位置h2與預 先存儲的工作臺面的高度位置h1之間的差分(h2-h1)。該差分(h2-h1)相當於在封裝後基板11的規定位置P2上封裝後基板11所具有的基板12的厚度。俯視時，基板12的規定位置P2和工作臺2的規定位置P1為同一測量位置。因此，能夠通過求出接觸位移感測器24測量的兩點的高度位置的差分(h2-h1)而準確地求出規定位置P2上的基板2的厚度。如此，能夠在封裝後基板11平坦地緊貼在工作臺2上的狀態下，使用檢查裝置23來準確地測量封裝後基板11所具有的基板12的厚度。 Next, the contact displacement sensor 24 is lowered and brought into contact with the predetermined position P2 of the substrate 12 which the package substrate 11 has. The height position h2 of the substrate 12 is measured by the contact displacement sensor 24 at a predetermined position P2 of the substrate 12. Since the substrate 11 is flatly attached and held on the table 2 after the package, the height position h2 of the substrate 12 can be accurately measured. Finding the measured height position h2 of the substrate 12 and the pre-measurement The difference between the height position h1 of the work surface stored first (h2-h1). This difference (h2-h1) corresponds to the thickness of the substrate 12 included in the package substrate 11 at a predetermined position P2 of the packaged substrate 11. The predetermined position P2 of the substrate 12 and the predetermined position P1 of the table 2 are the same measurement position in plan view. Therefore, the thickness of the substrate 2 at the predetermined position P2 can be accurately obtained by determining the difference (h2-h1) between the height positions of the two points measured by the contact displacement sensor 24. In this manner, the thickness of the substrate 12 included in the packaged substrate 11 can be accurately measured using the inspection device 23 in a state where the packaged substrate 11 is in close contact with the table 2 in a flat state.
(作用效果) (Effect)
在本實施方式中，檢查裝置23為具備如下構件的結構：工作臺2，用於載置作為對象的封裝後基板11；多個抽吸孔3，設置在工作臺2上且用於抽吸封裝後基板11；密封件10，設置在工作臺2上且包圍多個抽吸孔3的周圍；按壓部件7，在配置有密封件10的位置上，將封裝後基板11的周圍按壓到工作臺2上；減壓機構6，與多個抽吸孔3連接；和接觸位移感測器24，其為在利用按壓部件7按壓封裝後基板11的周圍並利用減壓機構6經由多個抽吸孔3抽吸封裝後基板11的狀態下，對封裝後基板11進行檢查的檢查機構。 In the present embodiment, the inspection device 23 is configured to include a table 2 for placing the packaged substrate 11 as a target, and a plurality of suction holes 3 provided on the table 2 for suction The rear substrate 11 is sealed; the sealing member 10 is disposed on the table 2 and surrounds the plurality of suction holes 3; and the pressing member 7 presses the periphery of the packaged substrate 11 to work at a position where the sealing member 10 is disposed. a table 2; a pressure reducing mechanism 6 connected to the plurality of suction holes 3; and a contact displacement sensor 24 for pressing the periphery of the packaged substrate 11 by the pressing member 7 and using a plurality of pumping mechanisms 6 An inspection mechanism for inspecting the packaged substrate 11 in a state where the suction hole 3 sucks the packaged substrate 11.
根據這種結構，經由密封件10，在具有翹曲的封裝後基板11與工作臺2之間形成密閉空間15。通過抽吸密閉空間15中存在的空氣，將封裝後基板11拉近並緊貼在工作臺2上。能夠將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11緊貼並保持在工作臺2上。因此，能夠在清除翹曲或歪斜等變形影響的狀態下，使用接觸位移感測器24來準確地測量封裝後基板11所具有的基板12的厚度。 According to this configuration, the sealed space 15 is formed between the substrate 11 having the warpage and the table 2 via the seal member 10. The packaged substrate 11 is brought close to and adhered to the table 2 by sucking the air present in the sealed space 15. The warpage of the packaged substrate 11 can be corrected to be flat, and the packaged substrate 11 can be brought into close contact with and held on the table 2. Therefore, the contact displacement sensor 24 can be used to accurately measure the thickness of the substrate 12 which the packaged substrate 11 has, in a state where the influence of deformation such as warpage or skew is removed.
根據本實施方式，在檢查裝置23中設置有：按壓部件7，與封裝後基板11對應且將封裝後基板11的周圍按壓到工作臺2上；和接觸位移感測器 24，用於測量封裝後基板11的厚度。即使在封裝後基板11中產生翹曲或歪斜等變形的情況下，也能利用按壓部件7按壓封裝後基板11的周圍，從而經由密封件10在封裝後基板11與工作臺2之間形成經密閉的密閉空間15。 According to the present embodiment, the inspection device 23 is provided with a pressing member 7 corresponding to the packaged substrate 11 and pressing the periphery of the packaged substrate 11 onto the table 2; and a contact displacement sensor 24, for measuring the thickness of the packaged substrate 11. Even in the case where deformation such as warpage or skew occurs in the packaged substrate 11, the periphery of the packaged substrate 11 can be pressed by the pressing member 7, thereby forming a warp between the packaged substrate 11 and the table 2 via the sealing member 10. A closed confined space 15.
在該狀態下，使用減壓機構6抽吸密閉空間15中存在的空氣。由此，能夠矯正封裝後基板11的變形而使封裝後基板11緊貼在工作臺2上。在封裝後基板11緊貼在工作臺2上的狀態下，使用接觸位移感測器24來測量封裝後基板11所具有的基板12的厚度。因此，能夠在清除翹曲或歪斜等變形影響的狀態下，準確地測量封裝後基板11所具有的基板12的厚度。 In this state, the air present in the sealed space 15 is sucked by the pressure reducing mechanism 6. Thereby, the deformation of the packaged substrate 11 can be corrected, and the packaged substrate 11 can be brought into close contact with the table 2. The contact displacement sensor 24 is used to measure the thickness of the substrate 12 which the package substrate 11 has, in a state where the package substrate 11 is in close contact with the stage 2. Therefore, it is possible to accurately measure the thickness of the substrate 12 included in the packaged substrate 11 in a state where the influence of deformation such as warpage or skew is removed.
根據本實施方式，在檢查裝置23中，首先在工作臺2上未載置封裝後基板11的狀態下，使用接觸位移感測器24來測量規定位置P1上的工作臺面的高度位置h1。接著，在工作臺2上載置封裝後基板11，並將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11緊貼在工作臺2上。在該狀態下，使用接觸位移感測器24來測量封裝後基板11的規定位置P2上的基板12的高度位置h2。通過對測量出的基板12的高度位置h2和預先測量的工作臺面的高度位置h1進行比較，能夠準確地求出封裝後基板11所具有的基板12的厚度。因此，能夠在清除翹曲或歪斜等變形影響的狀態下，準確地測量封裝後基板11所具有的基板12的厚度。 According to the present embodiment, in the inspection apparatus 23, first, the height position h1 of the table surface at the predetermined position P1 is measured using the contact displacement sensor 24 in a state where the packaged substrate 11 is not placed on the table 2. Next, the packaged substrate 11 is placed on the stage 2, and the warpage of the packaged substrate 11 is corrected to be flat, and the packaged substrate 11 is brought into close contact with the table 2. In this state, the contact displacement sensor 24 is used to measure the height position h2 of the substrate 12 at the predetermined position P2 of the packaged substrate 11. By comparing the height position h2 of the measured substrate 12 with the height position h1 of the table surface measured in advance, the thickness of the substrate 12 included in the packaged substrate 11 can be accurately obtained. Therefore, it is possible to accurately measure the thickness of the substrate 12 included in the packaged substrate 11 in a state where the influence of deformation such as warpage or skew is removed.
根據本實施方式，通過抽吸形成于封裝後基板11與工作臺2之間的密閉空間15中存在的空氣，使封裝後基板11緊貼在工作臺2上。由於密閉空間15所占的面積相當於真空受壓面積，因此即使在封裝後基板11的面積較大的情況下，或者在封裝後基板11的翹曲較大的情況下，也能通過將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11緊貼在工作臺2上。因此，即使在具有大面 積的封裝後基板11或翹曲較大的封裝後基板11中，也能在封裝後基板11緊貼在工作臺2上的狀態下，準確地測量封裝後基板11所具有的基板12的厚度。 According to the present embodiment, the air existing in the sealed space 15 formed between the packaged substrate 11 and the table 2 is sucked, and the packaged substrate 11 is brought into close contact with the table 2. Since the area occupied by the sealed space 15 corresponds to the vacuum pressure receiving area, even when the area of the substrate 11 after the package is large, or when the warpage of the substrate 11 after the package is large, the package can be packaged. The warpage of the rear substrate 11 is corrected to be flat, and the packaged substrate 11 is brought into close contact with the table 2. So even with large faces In the packaged rear substrate 11 or the packaged rear substrate 11 having a large warpage, the thickness of the substrate 12 which the packaged substrate 11 has can be accurately measured in a state in which the packaged substrate 11 is in close contact with the stage 2 .
在本實施方式中，為了方便說明，示出僅測量封裝後基板11所具有的基板12的一處厚度的情況。不限於此，可使用接觸位移感測器24在多個位置上以相同方式測量基板12的厚度。此時，能求出封裝後基板11所具有的基板12的厚度平均值和偏差。 In the present embodiment, for convenience of explanation, it is shown that only one thickness of the substrate 12 of the packaged substrate 11 is measured. Without being limited thereto, the thickness of the substrate 12 may be measured in the same manner at a plurality of positions using the contact displacement sensor 24. At this time, the average value and variation of the thickness of the substrate 12 included in the packaged substrate 11 can be obtained.
[實施方式4] [Embodiment 4]
參照第5圖，對使用檢查裝置23來測量封裝後基板11所具有的封裝樹脂13的相對厚度的操作進行說明。 The operation of measuring the relative thickness of the encapsulating resin 13 included in the packaged substrate 11 by using the inspection device 23 will be described with reference to Fig. 5 .
首先，如第5圖的(a)所示，將具有翹曲的封裝後基板11載置在工作臺2的規定位置上。接著，通過使按壓部件7下降而將封裝後基板11的周圍按壓到工作臺2上。接著，通過使用減壓機構6抽吸封裝後基板11，從而將封裝後基板11的翹曲矯正為平坦狀並使封裝後基板11緊貼在工作臺2上。在該狀態下，封裝後基板11被平坦地保持在工作臺2上。 First, as shown in (a) of FIG. 5, the packaged substrate 11 having warpage is placed on a predetermined position of the table 2. Next, the periphery of the packaged substrate 11 is pressed onto the table 2 by lowering the pressing member 7. Next, the packaged substrate 11 is sucked by using the pressure reducing mechanism 6, so that the warpage of the packaged substrate 11 is corrected to be flat and the packaged substrate 11 is brought into close contact with the table 2. In this state, the package substrate 11 is flatly held on the table 2.
接著，接觸位移感測器24下降並與封裝後基板11的規定位置P2接觸。在封裝後基板11的規定位置P2上，利用接觸位移感測器24測量封裝後基板11所具有的基板12的高度位置h2。將該測量出的基板12的高度位置h2作為封裝後基板11所具有的基板12的相對高度而存儲在記憶體等中。 Next, the contact displacement sensor 24 is lowered and brought into contact with the predetermined position P2 of the packaged substrate 11. The height position h2 of the substrate 12 which the packaged substrate 11 has is measured by the contact displacement sensor 24 at a predetermined position P2 of the packaged substrate 11. The height position h2 of the measured substrate 12 is stored in a memory or the like as the relative height of the substrate 12 included in the packaged substrate 11.
接著，接觸位移感測器24上升，並且接觸位移感測器24移動至封裝後基板11所具有的封裝樹脂13的上方的規定位置上。接觸位移感測器24下降並與封裝後基板11的規定位置P3接觸。在封裝後基板11的規定位置P3上，利用接觸位移感測器24測量封裝後基板11的高度位置h3。求出該測量出的封裝後基 板11的高度位置h3與預先存儲的基板12的相對高度位置h2之間的差分(h3-h2)。該差分(h3-h2)相當於封裝後基板11所具有的封裝樹脂13的相對厚度。在封裝後基板11被平坦地保持在工作臺2上的狀態下，通過測量封裝後基板11所具有的基板12的高度位置h2及封裝後基板11的高度位置h3，能夠求出封裝後基板11所具有的封裝樹脂13的相對厚度。 Next, the contact displacement sensor 24 is raised, and the contact displacement sensor 24 is moved to a prescribed position above the encapsulating resin 13 which the package substrate 11 has. The contact displacement sensor 24 is lowered and brought into contact with a prescribed position P3 of the package back substrate 11. The height position h3 of the packaged substrate 11 is measured by the contact displacement sensor 24 at a predetermined position P3 of the packaged substrate 11. Find the measured package back basis The difference (h3-h2) between the height position h3 of the board 11 and the relative height position h2 of the substrate 12 stored in advance. This difference (h3-h2) corresponds to the relative thickness of the encapsulating resin 13 which the package substrate 11 has. The packaged substrate 11 can be obtained by measuring the height position h2 of the substrate 12 and the height position h3 of the packaged substrate 11 in the state in which the package substrate 11 is flatly held on the table 2 by measuring the height position h2 of the substrate 12 of the packaged substrate 11. The relative thickness of the encapsulating resin 13 is provided.
根據本實施方式，封裝後基板11在其翹曲被矯正為平坦狀的狀態下被緊貼並保持在工作臺2上。因此，能夠在清除翹曲或歪斜等變形影響的狀態下，使用接觸位移感測器24來測量封裝後基板11所具有的基板12的高度位置h2及封裝後基板11的高度位置h3這兩個高度位置。因此，能夠通過求出測量出的高度位置的差分(h3-h2)來易於求出以往難以測量的封裝樹脂13的厚度。 According to the present embodiment, the packaged substrate 11 is in close contact with and held on the table 2 in a state where the warpage thereof is corrected to be flat. Therefore, the contact displacement sensor 24 can be used to measure the height position h2 of the substrate 12 and the height position h3 of the packaged substrate 11 which are included in the packaged substrate 11 in a state where the influence of deformation such as warpage or skew is removed. Height position. Therefore, the thickness of the sealing resin 13 which has been difficult to measure in the past can be easily obtained by obtaining the difference (h3-h2) of the measured height position.
根據本實施方式，通過抽吸形成于封裝後基板11與工作臺2之間的密閉空間15中存在的空氣，使封裝後基板11緊貼在工作臺2上。由於密閉空間15所占的面積相當於真空受壓面積，因此即使在封裝後基板11的面積較大的情況下，或者在封裝後基板11的翹曲較大的情況下，也能將封裝後基板11的翹曲矯正為平坦狀而使封裝後基板11緊貼並保持在工作臺2上。因此，即使在具有大面積的封裝後基板11或翹曲較大的封裝後基板11中，也能在封裝後基板11緊貼在工作臺2上的狀態下，求出封裝後基板11所具有的封裝樹脂13的相對厚度。 According to the present embodiment, the air existing in the sealed space 15 formed between the packaged substrate 11 and the table 2 is sucked, and the packaged substrate 11 is brought into close contact with the table 2. Since the area occupied by the sealed space 15 corresponds to the vacuum pressure receiving area, even after the area of the substrate 11 after the package is large, or when the warpage of the substrate 11 after the package is large, the package can be The warpage of the substrate 11 is corrected to be flat, and the packaged substrate 11 is brought into close contact with and held on the table 2. Therefore, even in the packaged substrate 11 having a large area or the packaged substrate 11 having a large warpage, the packaged substrate 11 can be obtained in a state in which the packaged substrate 11 is in close contact with the stage 2 The relative thickness of the encapsulating resin 13.
根據本實施方式，能求出在樹脂成型裝置中被樹脂封裝的封裝後基板11所具有的封裝樹脂13的相對厚度。因此，能夠容易進行以往難以實現的封裝樹脂13的膜厚管理，換言之，能夠容易進行作為最終產品的封裝件的厚度管理。由此，能夠穩定且容易管理樹脂成型中的成型處理工序。 According to the present embodiment, the relative thickness of the encapsulating resin 13 included in the packaged substrate 11 encapsulated by the resin in the resin molding apparatus can be obtained. Therefore, the film thickness management of the encapsulating resin 13 which has been difficult to achieve in the past can be easily performed, in other words, the thickness management of the package as the final product can be easily performed. Thereby, the molding processing process in resin molding can be stably and easily managed.
在本實施方式中，為了方便說明，示出僅測量封裝後基板11所具有的封裝樹脂13的一處厚度的情況。不限於此，可使用接觸位移感測器24以相同方式測量多個位置上的基板12及封裝後基板11的厚度。此時，能求出封裝後基板11所具有的封裝樹脂13的相對厚度平均值和偏差。 In the present embodiment, for convenience of explanation, it is shown that only one thickness of the encapsulating resin 13 included in the packaged substrate 11 is measured. Without being limited thereto, the thickness of the substrate 12 and the packaged substrate 11 at a plurality of positions may be measured in the same manner using the contact displacement sensor 24. At this time, the relative thickness average value and variation of the encapsulating resin 13 included in the packaged substrate 11 can be obtained.
[實施方式5] [Embodiment 5]
參照第6圖，對使用檢查裝置23在封裝後基板11的同一位置上分別測量基板12的厚度及封裝樹脂13的厚度的操作進行說明。 Referring to Fig. 6, an operation of measuring the thickness of the substrate 12 and the thickness of the encapsulating resin 13 at the same position of the package substrate 11 by the inspection device 23 will be described.
首先，如第6圖的(a)所示，在檢查裝置23中的工作臺2上未載置任何產品的狀態下，使接觸位移感測器24向測量位置的上方移動。接著，接觸位移感測器24下降並與工作臺2的規定位置P4接觸。工作臺2的規定位置P4與用於測量封裝前基板26所具有的基板12的厚度的位置P5(參照第6圖的(b))及用於測量封裝後基板11的厚度的位置P6(參照第6圖的(c))對應。在工作臺2的規定位置P4上，利用接觸位移感測器24測量工作臺面的高度位置h4。將該測量出的工作臺面的高度位置P4作為基準高度而存儲在記憶體等中。接觸位移感測器24上升，並在規定位置P4的上方待機。 First, as shown in (a) of FIG. 6, the contact displacement sensor 24 is moved above the measurement position in a state where no product is placed on the table 2 in the inspection device 23. Next, the contact displacement sensor 24 is lowered and brought into contact with the predetermined position P4 of the table 2. The predetermined position P4 of the table 2 and the position P5 for measuring the thickness of the substrate 12 of the package front substrate 26 (see (b) of FIG. 6) and the position P6 for measuring the thickness of the packaged substrate 11 (refer to Corresponding to (c)) of Fig. 6. At the predetermined position P4 of the table 2, the height position h4 of the work surface is measured by the contact displacement sensor 24. The height position P4 of the measured work surface is stored as a reference height in a memory or the like. The contact displacement sensor 24 rises and stands by above the predetermined position P4.
接著，如第6圖的(b)所示，將安裝有多個半導體晶片25的封裝前基板26載置在工作臺2的規定位置上。接著，通過使按壓部件7下降而將封裝前基板26的周圍按壓到工作臺2上。接著，使用減壓機構6抽吸封裝前基板26，從而矯正封裝前基板26的變形並使封裝前基板26緊貼在工作臺2上。在該狀態下，封裝前基板26的變形得到矯正而被平坦地緊貼在工作臺2上。 Next, as shown in FIG. 6(b), the package front substrate 26 on which the plurality of semiconductor wafers 25 are mounted is placed on a predetermined position of the table 2. Next, the periphery of the package front substrate 26 is pressed against the table 2 by lowering the pressing member 7. Next, the package front substrate 26 is sucked by the pressure reducing mechanism 6, thereby correcting the deformation of the package front substrate 26 and bringing the package front substrate 26 into close contact with the table 2. In this state, the deformation of the package front substrate 26 is corrected and is flatly adhered to the table 2.
接著，接觸位移感測器24下降並與封裝前基板26的規定位置P5接觸。封裝前基板26的規定位置P5為未安裝有半導體晶片25且基板12的上表面露 出的區域。在封裝前基板26的規定位置P5上，利用接觸位移感測器24測量封裝前基板26的高度位置h5。求出該測量出的封裝前基板26的高度位置h5與預先存儲的工作臺面的基準高度位置h4之間的差分(h5-h4)。該差分(h5-h4)相當於在封裝前基板26的規定位置P5上封裝前基板26所具有的基板12的厚度。將封裝前基板26的高度位置h5存儲在記憶體等中。 Next, the contact displacement sensor 24 is lowered and brought into contact with the predetermined position P5 of the package front substrate 26. The predetermined position P5 of the package front substrate 26 is such that the semiconductor wafer 25 is not mounted and the upper surface of the substrate 12 is exposed. Out of the area. The height position h5 of the package front substrate 26 is measured by the contact displacement sensor 24 at a predetermined position P5 of the package front substrate 26. The difference (h5-h4) between the measured height position h5 of the package front substrate 26 and the reference height position h4 of the table surface stored in advance is obtained. This difference (h5-h4) corresponds to the thickness of the substrate 12 included in the front substrate 26 at a predetermined position P5 of the package front substrate 26. The height position h5 of the package front substrate 26 is stored in a memory or the like.
接著，接觸位移感測器24上升，並在規定位置P5的上方待機。使按壓部件7上升並停止在原來的位置上。從工作臺2上取出封裝前基板26。在該狀態下，檢查裝置23返回至初始的待機狀態。 Next, the contact displacement sensor 24 rises and stands by above the predetermined position P5. The pressing member 7 is raised and stopped at the original position. The package front substrate 26 is taken out from the table 2. In this state, the inspection device 23 returns to the initial standby state.
接著，如第6圖的(c)所示，將封裝後基板11載置在工作臺2的規定位置上。該封裝後基板11為樹脂封裝有在上述規定位置P5上測量出高度位置h5的封裝前基板26的封裝後基板。因此，封裝前基板26和封裝後基板11在檢查裝置23的工作臺2上載置在相同的位置上。接著，通過使按壓部件7下降而將封裝後基板11的周圍按壓到工作臺2上。接著，使用減壓機構6抽吸封裝後基板11，從而矯正封裝後基板11的變形並使封裝後基板11緊貼在工作臺2上。在該狀態下，封裝後基板11被平坦地保持在工作臺2上。 Next, as shown in (c) of FIG. 6, the packaged substrate 11 is placed on a predetermined position of the table 2. The packaged substrate 11 is a packaged substrate on which the package front substrate 26 is packaged with the height position h5 at the predetermined position P5. Therefore, the package front substrate 26 and the package rear substrate 11 are placed at the same position on the table 2 of the inspection device 23. Next, the periphery of the packaged substrate 11 is pressed onto the table 2 by lowering the pressing member 7. Next, the packaged substrate 11 is sucked by the pressure reducing mechanism 6, thereby correcting the deformation of the packaged substrate 11 and bringing the packaged substrate 11 into close contact with the table 2. In this state, the package substrate 11 is flatly held on the table 2.
接著，接觸位移感測器24下降並與封裝後基板11的規定位置P6接觸。在封裝後基板11的規定位置P6上，利用接觸位移感測器24測量封裝後基板11的高度位置h6。求出該測量出的封裝後基板11的高度位置h6與預先存儲的封裝前基板26的高度位置h5之間的差分(h6-h5)。該差分(h6-h5)相當於在封裝後基板11的規定位置P6上封裝後基板11所具有的封裝樹脂13的厚度。如此，能夠在矯正封裝前基板26及封裝後基板11的變形而平坦地保持在工作臺2上的狀態 下，在封裝後基板11的同一位置上準確地測量封裝後基板11所具有的基板12的厚度及封裝樹脂13的厚度。 Then, the contact displacement sensor 24 is lowered and brought into contact with the predetermined position P6 of the packaged substrate 11. The height position h6 of the packaged substrate 11 is measured by the contact displacement sensor 24 at a predetermined position P6 of the packaged substrate 11. The difference (h6-h5) between the measured height position h6 of the packaged substrate 11 and the height position h5 of the package front substrate 26 stored in advance is obtained. This difference (h6-h5) corresponds to the thickness of the encapsulating resin 13 included in the back substrate 11 at a predetermined position P6 of the packaged substrate 11. In this way, it is possible to correct the state in which the package front substrate 26 and the package rear substrate 11 are deformed and to be flatly held on the table 2 Next, the thickness of the substrate 12 and the thickness of the encapsulating resin 13 which the packaged substrate 11 has are accurately measured at the same position of the packaged substrate 11.
根據本實施方式，在檢查裝置23中，封裝前基板26及封裝後基板11在矯正變形的狀態下被緊貼並保持在工作臺2上。因此，能夠在清除翹曲或歪斜等變形影響的狀態下，使用接觸位移感測器24來準確地測量同一位置上的封裝後基板11所具有的基板12的高度位置h5及封裝後基板11的高度位置h6。因此，能夠由這些高度位置h6、h5及同一位置上的工作臺面的基準高度位置h4準確地測量封裝後基板11所具有的基板12的厚度及封裝樹脂13的厚度。 According to the present embodiment, in the inspection apparatus 23, the package front substrate 26 and the package rear substrate 11 are closely attached to and held on the table 2 in a state of being corrected and deformed. Therefore, the contact displacement sensor 24 can be used to accurately measure the height position h5 of the substrate 12 and the packaged substrate 11 of the packaged substrate 11 at the same position in a state where the influence of deformation such as warpage or skew is removed. Height position h6. Therefore, the thickness of the substrate 12 and the thickness of the encapsulating resin 13 which the packaged substrate 11 has can be accurately measured from the height positions h6 and h5 and the reference height position h4 of the work surface at the same position.
根據本實施方式，即使在基板的面積較大的情況下，或者在基板的翹曲較大的情況下，也能矯正封裝前基板26及封裝後基板11的變形而使其緊貼並保持在工作臺2上。因此，即使在具有大面積的封裝後基板11或翹曲較大的封裝後基板11中，也能準確地測量封裝後基板11所具有的基板12的厚度及封裝樹脂13的厚度。 According to the present embodiment, even when the area of the substrate is large or when the warpage of the substrate is large, the deformation of the package front substrate 26 and the package substrate 11 can be corrected and adhered to and held by On the workbench 2. Therefore, even in the packaged substrate 11 having a large area or the packaged substrate 11 having a large warpage, the thickness of the substrate 12 and the thickness of the sealing resin 13 which the packaged substrate 11 has can be accurately measured.
在本實施例中，為了方便說明，示出僅測量封裝後基板11所具有的基板12的一處厚度及封裝樹脂13的一處厚度的情況。不限於此，可使用接觸位移感測器24在多個位置上測量封裝後基板11所具有的基板12的厚度及封裝樹脂13的厚度。此時，能求出封裝後基板11所具有的基板12的厚度及封裝樹脂13的厚度的平均值和偏差。 In the present embodiment, for convenience of explanation, only the case where only one thickness of the substrate 12 of the packaged substrate 11 and one thickness of the encapsulating resin 13 are measured is shown. Without being limited thereto, the thickness of the substrate 12 and the thickness of the encapsulating resin 13 which the packaged substrate 11 has may be measured at a plurality of positions using the contact displacement sensor 24. At this time, the average value and variation of the thickness of the substrate 12 and the thickness of the encapsulating resin 13 which the package substrate 11 has.
在本實施方式中，通過使用接觸位移感測器24來分別測量同一位置上的工作臺面的基準高度位置h4、封裝後基板11所具有的基板12的高度位置h5及封裝後基板11的高度位置h6，並且求出封裝後基板11所具有的基板12的厚度及封裝樹脂13的厚度。不限於此，也可以在例如開始生產時進行工作臺面的 基準高度位置h4的測量並且共用其值。進行工作臺面的基準高度位置h4的測量，並且與樹脂封裝的次數相應地共用其值。這樣能夠減少基準高度位置h4的測量次數。 In the present embodiment, the reference height position h4 of the work surface at the same position, the height position h5 of the substrate 12 of the packaged substrate 11 and the height position of the packaged substrate 11 are respectively measured by using the contact displacement sensor 24. In the case of h6, the thickness of the substrate 12 and the thickness of the encapsulating resin 13 which the packaged substrate 11 has are obtained. Not limited to this, it is also possible to carry out the work surface at the beginning of production, for example. The reference height position h4 is measured and its value is shared. The measurement of the reference height position h4 of the work surface is performed, and the value is shared in accordance with the number of times of resin encapsulation. This can reduce the number of measurements of the reference height position h4.
在本實施方式中，對於具有基板12及封裝樹脂13這雙層結構的封裝後基板11分別求出基板12的厚度及封裝樹脂13的厚度。不限於此，即使是具有三層以上結構的基板(對象)，也能在各個層中測量高度位置。通過分別求出這些測量出的高度位置的差分，能夠準確地求出各層的厚度。 In the present embodiment, the thickness of the substrate 12 and the thickness of the encapsulating resin 13 are obtained for the packaged substrate 11 having the two-layer structure of the substrate 12 and the encapsulating resin 13, respectively. Not limited to this, even a substrate (object) having a structure of three or more layers can measure the height position in each layer. By determining the difference between these measured height positions, the thickness of each layer can be accurately obtained.
此外，在本實施方式中，在封裝前基板26緊貼在工作臺2上的狀態下，利用接觸位移感測器24來測量封裝前基板26的高度位置。不限於封裝前基板26的高度位置的測量，在封裝前基板26緊貼在工作臺2上的狀態下，例如可檢查半導體晶片25的缺損狀態等。在該情況下，能夠使用接觸位移感測器、光學位移感測器、圖像識別系統或線性感測器等，來檢查半導體晶片25是否正常配置在基板12上或者半導體晶片25有無缺損等。在半導體晶片25缺損的情況下，能調整樹脂成型時供給的樹脂量。由此，即使在封裝前基板中半導體晶片缺損的情況下，也能以規定的封裝件厚度進行樹脂成型。 Further, in the present embodiment, the height position of the package front substrate 26 is measured by the contact displacement sensor 24 in a state where the package front substrate 26 is in close contact with the table 2. Not limited to the measurement of the height position of the package front substrate 26, in a state in which the substrate 26 is in close contact with the stage 2 before the package, for example, the defect state of the semiconductor wafer 25 or the like can be inspected. In this case, it is possible to check whether the semiconductor wafer 25 is normally disposed on the substrate 12 or whether the semiconductor wafer 25 is defective or the like using a contact displacement sensor, an optical displacement sensor, an image recognition system, a line sensor, or the like. When the semiconductor wafer 25 is missing, the amount of resin supplied during resin molding can be adjusted. Thereby, even in the case where the semiconductor wafer is defective in the package front substrate, resin molding can be performed with a predetermined package thickness.
[實施方式6] [Embodiment 6]
(樹脂成型裝置的結構) (Structure of resin molding device)
參照第7圖，對實施方式6的樹脂成型裝置進行說明。第7圖所示的樹脂成型裝置為包括目前為止所說明的檢查裝置23的樹脂成型裝置。在第7圖中示出例如使用壓縮成型法的樹脂成型裝置。 The resin molding apparatus of the sixth embodiment will be described with reference to Fig. 7 . The resin molding apparatus shown in Fig. 7 is a resin molding apparatus including the inspection apparatus 23 described so far. In Fig. 7, a resin molding apparatus using, for example, a compression molding method is shown.
樹脂成型裝置27包括分別作為結構要素的基板供給收納模組28、檢查模組29、三個成型模組30A、30B、30C和樹脂供給模組31。作為結構 要素的基板供給收納模組28、檢查模組29、三個成型模組30A、30B、30C和樹脂供給模組31分別相對於其他結構要素能夠彼此裝卸，並且能夠更換。 The resin molding apparatus 27 includes a substrate supply storage module 28, an inspection module 29, three molding modules 30A, 30B, and 30C and a resin supply module 31 as constituent elements. As a structure The element substrate supply storage module 28, the inspection module 29, the three molding modules 30A, 30B, and 30C and the resin supply module 31 can be detachably attached to each other with respect to other components, and can be replaced.
在基板供給收納模組28中設置有：封裝前基板供給部32，用於供給封裝前基板26；封裝後基板收納部33，用於收納封裝後基板11；基板載置部34，用於轉交封裝前基板26和封裝後基板11；和基板運送機構35，用於運送封裝前基板26和封裝後基板11。基板載置部34在基板供給收納模組28內沿Y方向移動。基板運送機構35在基板供給收納模組28、檢查模組29及各個成型模組30A、30B、30C內沿X方向、Y方向和Z方向移動。規定位置S1為基板運送機構35在未操作狀態下待機的位置。 The substrate supply and storage module 28 is provided with a pre-package substrate supply unit 32 for supplying the package front substrate 26, a packaged substrate storage unit 33 for accommodating the packaged substrate 11, and a substrate placement unit 34 for transferring The front substrate 26 and the package back substrate 11 are packaged; and the substrate transport mechanism 35 is used to transport the package front substrate 26 and the package rear substrate 11. The substrate mounting portion 34 moves in the Y direction in the substrate supply and storage module 28 . The substrate transport mechanism 35 moves in the X direction, the Y direction, and the Z direction in the substrate supply and storage module 28, the inspection module 29, and each of the molding modules 30A, 30B, and 30C. The predetermined position S1 is a position at which the substrate transport mechanism 35 stands by in an unoperated state.
在檢查模組29中設置有實施方式3至5所示的檢查裝置23。檢查裝置23包括工作臺2、減壓機構6、按壓部件7和接觸位移感測器24。根據需要，使用檢查裝置23來檢查工作臺2的基準高度位置、封裝前基板26所具有的基板12的高度位置、封裝後基板11所具有的基板12的高度位置及封裝後基板11的高度位置、封裝前基板26中的半導體晶片的配置狀態等。 The inspection device 23 shown in Embodiments 3 to 5 is provided in the inspection module 29. The inspection device 23 includes a table 2, a pressure reducing mechanism 6, a pressing member 7, and a contact displacement sensor 24. The inspection device 23 is used to inspect the reference height position of the table 2, the height position of the substrate 12 included in the package front substrate 26, the height position of the substrate 12 included in the package substrate 11, and the height position of the package substrate 11 using the inspection device 23. The arrangement state of the semiconductor wafer in the front substrate 26 is encapsulated.
在各成型模組30A、30B、30C中設置有能夠升降的下模36和與下模36相對配置的上模(參照第8圖)。在下模36中設置有將被供給樹脂材料的型腔37。在下模36中設置有用於供給長形狀的離型膜的離型膜供給機構38(在第7圖中用雙點劃線表示的矩形部分)。各成型模組30A、30B、30具備對上模和下模36進行開模及合模的合模機構39(在第7圖中用雙點劃線表示的圓形部分)。 Each of the molding modules 30A, 30B, and 30C is provided with a lower mold 36 that can be raised and lowered and an upper mold that is disposed to face the lower mold 36 (see Fig. 8). A cavity 37 to be supplied with a resin material is provided in the lower mold 36. A release film supply mechanism 38 (a rectangular portion indicated by a chain double-dashed line in FIG. 7) for supplying a long-shaped release film is provided in the lower mold 36. Each of the molding modules 30A, 30B, and 30 includes a mold clamping mechanism 39 (a circular portion indicated by a chain double-dashed line in Fig. 7) for opening and closing the upper and lower molds 36.
在樹脂供給模組31中設置有：X-Y工作臺40；樹脂收容部41，被載置在X-Y工作臺40上；樹脂材料投入機構42，用於向樹脂收容部41投入樹脂材料；和樹脂運送機構43，用於運送樹脂收容部41。X-Y工作臺40在樹脂供給模組 31內沿X方向及Y方向移動。樹脂運送機構43在樹脂供給模組31及各個成型模組30A、30B、30C內沿X方向、Y方向和Z方向移動。規定位置R1為樹脂運送機構43在未操作狀態下待機的位置。 The resin supply module 31 is provided with an XY table 40, a resin accommodating portion 41 placed on the XY table 40, a resin material input mechanism 42 for introducing a resin material into the resin accommodating portion 41, and a resin carrier. The mechanism 43 is for conveying the resin containing portion 41. X-Y table 40 in resin supply module 31 moves in the X direction and the Y direction. The resin conveying mechanism 43 moves in the X direction, the Y direction, and the Z direction in the resin supply module 31 and each of the molding modules 30A, 30B, and 30C. The predetermined position R1 is a position at which the resin conveying mechanism 43 stands by in the non-operating state.
在基板供給收納模組28中設置有控制部CTL。控制部CTL用於控制封裝前基板26及封裝後基板11的運送、樹脂材料的運送、成型模的合模及開模、封裝前基板26及封裝後基板11的厚度測量等。控制部CTL可以設置在檢查模組29、各成型模組30A、30B、30C或樹脂供給模組31中。 The control unit CTL is provided in the substrate supply storage module 28. The control unit CTL is for controlling the conveyance of the package front substrate 26 and the package back substrate 11, the conveyance of the resin material, the mold clamping and mold opening of the molding die, the thickness measurement of the package front substrate 26 and the package substrate 11 and the like. The control unit CTL may be disposed in the inspection module 29, each of the molding modules 30A, 30B, and 30C or the resin supply module 31.
(樹脂成型裝置的操作) (Operation of resin molding device)
參照第7圖至第8圖，對使用樹脂成型裝置27來進行樹脂封裝的操作進行說明。首先，在基板供給收納模組28中，由封裝前基板供給部32向基板載置部34送出封裝前基板26。基板運送機構35從規定位置S1沿-Y方向移動，並且基板運送機構35從基板載置部34接收封裝前基板26。基板運送機構35返回至規定位置S1。 The operation of resin encapsulation using the resin molding device 27 will be described with reference to Figs. 7 to 8 . First, in the substrate supply and storage module 28, the package front substrate 26 is sent out from the package front substrate supply unit 32 to the substrate placement unit 34. The substrate conveyance mechanism 35 moves in the -Y direction from the predetermined position S1, and the substrate conveyance mechanism 35 receives the package front substrate 26 from the substrate placement portion 34. The substrate transport mechanism 35 returns to the predetermined position S1.
接著，例如基板運送機構35沿+X方向移動至成型模組30B的規定位置M1。在成型模組30B中，基板運送機構35沿-Y方向移動並停止在下模36上方的規定位置C1。由離型膜供給機構38向下模36供給離型膜44(參照第8圖的(a))。基板運送機構35上升以將封裝前基板26供給到上模45(參照第8圖的(a))。基板運送機構35返回至基板供給收納模組28的規定位置S1。 Next, for example, the substrate transport mechanism 35 is moved in the +X direction to the predetermined position M1 of the molding module 30B. In the molding die 30B, the substrate conveyance mechanism 35 moves in the -Y direction and stops at a predetermined position C1 above the lower die 36. The release film 44 is supplied from the release film supply mechanism 38 to the lower mold 36 (refer to (a) of Fig. 8). The substrate transport mechanism 35 is raised to supply the package front substrate 26 to the upper mold 45 (see (a) of Fig. 8). The substrate transport mechanism 35 returns to the predetermined position S1 of the substrate supply storage module 28.
接著，在樹脂供給模組31中，使X-Y工作臺40沿-Y方向移動，並使樹脂收容部41停止在樹脂材料投入機構42下方的規定位置。通過使X-Y工作臺40沿X方向及Y方向移動，從樹脂材料投入機構42向樹脂收容部41供給規定量的 樹脂材料。在向樹脂收容部41供給樹脂材料之後，X-Y工作臺40返回至原來的位置。 Next, in the resin supply module 31, the X-Y table 40 is moved in the -Y direction, and the resin accommodating portion 41 is stopped at a predetermined position below the resin material feeding mechanism 42. By moving the X-Y table 40 in the X direction and the Y direction, a predetermined amount is supplied from the resin material feeding mechanism 42 to the resin housing portion 41. Resin material. After the resin material is supplied to the resin accommodating portion 41, the X-Y table 40 is returned to the original position.
接著，使樹脂運送機構43從規定位置R1沿-Y方向移動。樹脂運送機構43接收載置在X-Y工作臺40上的樹脂收容部41。樹脂運送機構43返回至規定位置R1。樹脂運送機構43沿-X方向移動至成型模組30B的規定位置M1。 Next, the resin conveying mechanism 43 is moved in the -Y direction from the predetermined position R1. The resin conveying mechanism 43 receives the resin accommodating portion 41 placed on the X-Y table 40. The resin conveying mechanism 43 returns to the predetermined position R1. The resin conveying mechanism 43 moves to the predetermined position M1 of the molding die 30B in the -X direction.
接著，在樹脂供給模組31中，樹脂運送機構43沿-Y方向移動並停止在下模36上方的規定位置C1。通過使樹脂運送機構43下降，從樹脂收容部41向型腔37供給樹脂材料46(參照第8圖的(a))。樹脂運送機構43返回至規定位置R1。此外，在第8圖的(a)中示出供給顆粒狀樹脂以作為樹脂材料的情況。 Next, in the resin supply module 31, the resin conveying mechanism 43 moves in the -Y direction and stops at the predetermined position C1 above the lower mold 36. By lowering the resin conveying mechanism 43, the resin material 46 is supplied from the resin accommodating portion 41 to the cavity 37 (see (a) of Fig. 8). The resin conveying mechanism 43 returns to the predetermined position R1. Further, a case where a particulate resin is supplied as a resin material is shown in (a) of Fig. 8.
接著，如第8圖的(b)所示，通過使樹脂材料46熔化而生成流動性樹脂47。利用合模機構39(參照第7圖)使下模36上升，對上模45和下模36進行合模。通過合模，使安裝在封裝前基板26上的半導體晶片25浸漬到在型腔37內熔化的流動性樹脂47中。 Next, as shown in (b) of FIG. 8, the fluid resin 47 is produced by melting the resin material 46. The lower mold 36 is raised by the mold clamping mechanism 39 (refer to Fig. 7), and the upper mold 45 and the lower mold 36 are clamped. The semiconductor wafer 25 mounted on the package front substrate 26 is immersed in the fluid resin 47 melted in the cavity 37 by mold clamping.
接著，如第8圖的(c)所示，對流動性樹脂47進行加熱，加熱時間為流動性樹脂47的硬化所需的時間。通過使流動性樹脂47硬化而成型硬化樹脂48。由此，通過被成型為與型腔37的形狀對應的硬化樹脂48來對安裝在封裝前基板26上的半導體晶片25進行樹脂封裝。 Next, as shown in (c) of FIG. 8, the fluid resin 47 is heated, and the heating time is the time required for the fluid resin 47 to harden. The curable resin 48 is molded by curing the fluid resin 47. Thereby, the semiconductor wafer 25 mounted on the package front substrate 26 is resin-sealed by the hardened resin 48 molded to correspond to the shape of the cavity 37.
接著，如第8圖的(d)所示，在經過規定時間之後，對上模45和下模36進行開模。在上模45的型面上固定有經樹脂封裝的封裝後基板11。 Next, as shown in (d) of Fig. 8, after the lapse of a predetermined time, the upper mold 45 and the lower mold 36 are opened. A packaged substrate 11 encapsulated with a resin is fixed to the surface of the upper mold 45.
接著，基板運送機構35從基板供給收納模組28的規定位置S1移動至成型模組30B的規定位置M1。進而，基板運送機構35移動至下模36上方的規定位置C1，從而利用基板運送機構35來接收封裝後基板11。 Next, the substrate transport mechanism 35 is moved from the predetermined position S1 of the substrate supply storage module 28 to the predetermined position M1 of the molding module 30B. Further, the substrate transport mechanism 35 moves to the predetermined position C1 above the lower mold 36, and the packaged substrate 11 is received by the substrate transport mechanism 35.
接著，基板運送機構35從成型模組30B移動至檢查模組29，並停止在檢查裝置23的工作臺2上方的規定位置E1。從基板運送機構35向檢查裝置23轉交封裝後基板11。基板運送機構35返回至規定位置S1。 Next, the substrate transport mechanism 35 moves from the molding module 30B to the inspection module 29, and stops at the predetermined position E1 above the table 2 of the inspection device 23. The packaged substrate 11 is transferred from the substrate transfer mechanism 35 to the inspection device 23. The substrate transport mechanism 35 returns to the predetermined position S1.
接著，使用檢查裝置23，例如分別測量經樹脂封裝的封裝後基板11所具有的基板12的高度位置h2和封裝後基板11的高度位置h3(參照第5圖)。控制部CTL通過對這些高度位置進行比較而求出封裝後基板11所具有的封裝樹脂13的相對厚度。 Next, using the inspection device 23, for example, the height position h2 of the substrate 12 and the height position h3 of the packaged substrate 11 which are included in the resin-packaged package substrate 11 are respectively measured (refer to FIG. 5). The control unit CTL obtains the relative thickness of the encapsulating resin 13 included in the packaged substrate 11 by comparing these height positions.
接著，通過使基板運送機構35移動至檢查裝置23的工作臺2上方的規定位置E1，從檢查裝置23接收封裝後基板11。通過使基板運送機構35移動，向基板載置部34轉交封裝後基板11。將封裝後基板11從基板載置部34收納在封裝後基板收納部33中。通過目前為止的步驟，完成樹脂封裝。 Next, the package conveyance mechanism 35 is moved to the predetermined position E1 above the table 2 of the inspection device 23, and the packaged substrate 11 is received from the inspection device 23. By moving the substrate transfer mechanism 35, the packaged substrate 11 is transferred to the substrate mounting portion 34. The packaged substrate 11 is housed in the packaged substrate storage portion 33 from the substrate mounting portion 34. The resin encapsulation is completed by the steps so far.
根據本實施方式，在樹脂成型裝置27的檢查模組29中設置有檢查裝置23。通過使用檢查裝置23，能夠在矯正封裝前基板26或封裝後基板11的變形而使其緊貼在工作臺2上的狀態下測量封裝前基板26所具有的基板12的高度位置、封裝後基板11所具有的基板12的高度位置及封裝後基板11的高度位置等。由此，能夠準確地求出封裝後基板11所具有的封裝樹脂13的厚度。因此，能夠在樹脂成型裝置27中進行樹脂成型工序的正常管理。由此，能夠使樹脂成型裝置27穩定地工作。 According to the present embodiment, the inspection device 23 is provided in the inspection module 29 of the resin molding device 27. By using the inspection device 23, it is possible to measure the height position of the substrate 12 of the package front substrate 26 and the package substrate after correcting the deformation of the package front substrate 26 or the package substrate 11 to be in close contact with the table 2. 11 has a height position of the substrate 12 and a height position of the packaged substrate 11 and the like. Thereby, the thickness of the encapsulating resin 13 which the packaged substrate 11 has can be accurately obtained. Therefore, the normal management of the resin molding process can be performed in the resin molding device 27. Thereby, the resin molding apparatus 27 can be stably operated.
在本實施方式中，示出在使用壓縮成型法的樹脂成型裝置27中設置有檢查裝置23的情況。不限於此，也可以在使用傳遞模塑法或注塑成型法的樹脂成型裝置中設置本發明的檢查裝置23。 In the present embodiment, the case where the inspection device 23 is provided in the resin molding device 27 using the compression molding method is shown. Without being limited thereto, the inspection device 23 of the present invention may be provided in a resin molding apparatus using a transfer molding method or an injection molding method.
在本實施方式中，在樹脂成型裝置27的檢查模組29中一體設置有檢查裝置23。不限於此，也可以將檢查裝置23與樹脂成型裝置27分開設置。在該情況下，可利用一台檢查裝置23來測量多個樹脂成型裝置中成型的封裝樹脂的厚度。 In the present embodiment, the inspection device 23 is integrally provided in the inspection module 29 of the resin molding device 27. Not limited to this, the inspection device 23 may be provided separately from the resin molding device 27. In this case, an inspection device 23 can be used to measure the thickness of the encapsulating resin molded in the plurality of resin molding devices.
在各實施方式中，使用檢查裝置23所具有的接觸位移感測器24來測量工作臺2的高度位置、封裝前基板26所具有的基板12的高度位置、封裝後基板11所具有的基板12的高度位置及封裝後基板11的高度位置等。不限於此，可以使用光學位移感測器或圖像識別系統來進行同樣的測量。 In each of the embodiments, the height position of the table 2, the height position of the substrate 12 of the package front substrate 26, and the substrate 12 of the package substrate 11 are measured using the contact displacement sensor 24 of the inspection device 23. The height position and the height position of the packaged rear substrate 11 and the like. Not limited to this, the same measurement can be performed using an optical displacement sensor or an image recognition system.
在各實施方式中，示出在檢查裝置23中設置有作為檢查機構的接觸位移感測器24的情況。不限於此，可以在檢查裝置23中設置有接觸位移感測器24和圖像處理系統這兩個檢查機構。在該情況下，可以使用檢查裝置23來進行封裝後基板11所具有的基板12的厚度測量、封裝後基板11所具有的封裝樹脂13的厚度測量、以及封裝後基板11的表面檢查和缺陷檢查等。此外，也可以對封裝前基板26檢查半導體晶片的缺損狀態等。 In each of the embodiments, a case where the contact displacement sensor 24 as an inspection mechanism is provided in the inspection device 23 is shown. Not limited to this, two inspection mechanisms such as the contact displacement sensor 24 and the image processing system may be provided in the inspection device 23. In this case, the inspection device 23 can be used to measure the thickness of the substrate 12 which the substrate 11 has after packaging, the thickness measurement of the encapsulation resin 13 which the substrate 11 has after packaging, and the surface inspection and defect inspection of the packaged substrate 11. Wait. Further, the package substrate 26 may be inspected for the defect state of the semiconductor wafer or the like.
如上述，上述實施方式的保持裝置為具備如下構件的結構：工作臺，用於載置對象；多個抽吸孔，設置在工作臺上且用於抽吸對象；密封件，設置在工作臺上且包圍多個抽吸孔的周圍；按壓部件，在配置有密封件的位置上，將對象的周圍按壓到工作臺上；和減壓機構，與多個抽吸孔連接。 As described above, the holding device of the above embodiment is configured to have a structure for placing a target, a plurality of suction holes provided on the table and for sucking the object, and a sealing member disposed on the table The upper portion surrounds the plurality of suction holes; the pressing member presses the periphery of the object to the table at a position where the sealing member is disposed; and the pressure reducing mechanism is connected to the plurality of suction holes.
根據該結構，能夠矯正對象的變形而使其緊貼並保持在工作臺上。 According to this configuration, it is possible to correct the deformation of the object so as to be in close contact with and held on the table.
上述實施方式的檢查裝置為具備如下構件的結構：工作臺，用於載置對象；多個抽吸孔，設置在工作臺上且用於抽吸對象；密封件，設置在工 作臺上且包圍多個抽吸孔的周圍；按壓部件，在配置有密封件的位置上，將對象的周圍按壓到工作臺上；減壓機構，與多個抽吸孔連接；和檢查機構，在利用按壓部件按壓對象的周圍並且利用減壓機構經由多個抽吸孔抽吸對象的狀態下，對對象進行檢查。 The inspection apparatus according to the above embodiment is configured to have a structure for placing a target, a plurality of suction holes provided on the table and for sucking the object, and a seal member disposed at the work. a table and surrounding the plurality of suction holes; a pressing member that presses the periphery of the object to the table at a position where the sealing member is disposed; a pressure reducing mechanism that is connected to the plurality of suction holes; and an inspection mechanism The object is inspected while the object is pressed by the pressing member and the object is sucked through the plurality of suction holes by the pressure reducing mechanism.
根據該結構，能夠在使對象緊貼在工作臺上而清除翹曲或歪斜等變形影響的狀態下，使用檢查機構來準確地進行對象的檢查。 According to this configuration, it is possible to accurately perform inspection of the object using the inspection mechanism while the object is in close contact with the table to remove the influence of deformation such as warpage or skew.
此外，在上述實施方式的檢查裝置中，檢查機構為包含接觸位移感測器、光學位移感測器和圖像處理系統中的任一個的結構。 Further, in the inspection apparatus of the above embodiment, the inspection mechanism is a structure including any one of a contact displacement sensor, an optical displacement sensor, and an image processing system.
根據該結構，能夠準確地進行對象的厚度測量或對象的表面檢查等。 According to this configuration, the thickness measurement of the object, the surface inspection of the object, and the like can be accurately performed.
此外，樹脂成型裝置為具備上述實施方式的檢查裝置的結構。 Further, the resin molding apparatus is configured to include the inspection apparatus of the above-described embodiment.
根據該結構，能夠在樹脂成型裝置中進行樹脂成型工序的正常管理。因此，能夠使樹脂成型裝置穩定地工作。 According to this configuration, normal management of the resin molding process can be performed in the resin molding apparatus. Therefore, the resin molding apparatus can be stably operated.
上述實施方式的檢查方法包括以下步驟：將對象載置在設置有多個抽吸孔和包圍多個抽吸孔的周圍的密封件的工作臺上；在配置有密封件的位置上，利用按壓部件將對象的周圍按壓到工作臺上；通過按壓對象的周圍而在工作臺與對象之間形成空間；通過經由多個抽吸孔抽吸空間的空氣，將對象拉近並緊貼在工作臺上；和在使對象緊貼在工作臺上的狀態下使用檢查機構對對象進行檢查。 The inspection method of the above embodiment includes the steps of: placing the object on a table provided with a plurality of suction holes and a seal surrounding the plurality of suction holes; at a position where the seal is disposed, using the pressing The component presses the circumference of the object onto the workbench; a space is formed between the workbench and the object by pressing the periphery of the object; the object is drawn closer to the workbench by sucking air through the space through the plurality of suction holes Upper; and use the inspection mechanism to inspect the object while the object is in close contact with the workbench.
根據該方法，能夠在使對象緊貼在工作臺上而清除翹曲或外形等變形影響的狀態下，使用檢查機構來對對象進行準確的檢查。 According to this method, it is possible to accurately inspect an object using an inspection mechanism while the object is brought into close contact with the table to remove the influence of deformation such as warpage or shape.
此外，在上述實施方式的檢查方法中，對象為封裝前基板或封裝後基板，通過使用檢查機構來對對象進行檢查。 Further, in the inspection method of the above embodiment, the object is a package front substrate or a package rear substrate, and the object is inspected by using an inspection mechanism.
根據該方法，能夠在使封裝前基板或封裝後基板緊貼在工作臺上的狀態下，對封裝前基板或封裝後基板進行準確的檢查。 According to this method, it is possible to accurately inspect the pre-package substrate or the package post-substrate in a state in which the package front substrate or the package rear substrate is brought into close contact with the workbench.
此外，在上述實施方式的檢查方法中，檢查方法包括以下步驟：在未將對象載置在工作臺上的狀態下，使用檢查機構來測量工作臺的基準高度資訊；和在使對象緊貼在工作臺上的狀態下，使用檢查機構來測量對象的高度資訊，該檢查方法通過對對象的高度資訊和工作臺的基準高度資訊進行比較而求出對象的厚度。 Further, in the inspection method of the above embodiment, the inspection method includes the steps of: using the inspection mechanism to measure the reference height information of the workbench in a state where the object is not placed on the workbench; and In the state on the workbench, an inspection mechanism is used to measure the height information of the object, and the inspection method obtains the thickness of the object by comparing the height information of the object with the reference height information of the workbench.
根據該方法，能夠通過在同一位置上對工作臺的基準高度資訊和在使對象緊貼在工作臺上的狀態下測量出的對象的高度資訊進行比較，從而更準確地求出對象的厚度。 According to this method, it is possible to more accurately obtain the thickness of the object by comparing the reference height information of the table at the same position with the height information of the object measured in a state in which the object is in close contact with the table.
此外，在上述實施方式的檢查方法中，對象具有基板和形成在基板上的絕緣體，檢查方法包括以下步驟：在使對象緊貼在工作臺上的狀態下，使用檢查機構來測量基板的高度資訊和絕緣體額高度資訊，該檢查方法通過對絕緣體的高度資訊和基板的高度資訊進行比較而求出絕緣體的厚度。 Further, in the inspection method of the above embodiment, the object has a substrate and an insulator formed on the substrate, and the inspection method includes the step of measuring the height information of the substrate using the inspection mechanism while the object is in close contact with the table. And the insulation amount height information, the inspection method determines the thickness of the insulator by comparing the height information of the insulator with the height information of the substrate.
根據該方法，能夠在使具有基板和絕緣體的對象緊貼在工作臺上的狀態下，通過對基板的高度資訊和絕緣體的高度資訊進行比較而易於求出絕緣體的相對厚度。 According to this method, the relative thickness of the insulator can be easily obtained by comparing the height information of the substrate and the height information of the insulator in a state in which the object having the substrate and the insulator is brought into close contact with the stage.
此外，在上述實施方式的檢查方法中，檢查機構為接觸位移感測器、光學位移感測器和圖像識別系統中的任一個機構，通過使用檢查機構而測量對象的厚度。 Further, in the inspection method of the above embodiment, the inspection mechanism is any one of a contact displacement sensor, an optical displacement sensor, and an image recognition system, and the thickness of the object is measured by using the inspection mechanism.
根據該方法，能夠在使對象緊貼在工作臺上的狀態下，通過使用接觸位移感測器、光學位移感測器和圖像識別系統中的任一個機構而準確地求出對象的厚度。 According to this method, it is possible to accurately obtain the thickness of the object by using any one of the contact displacement sensor, the optical displacement sensor, and the image recognition system while the object is in close contact with the table.
此外，樹脂封裝方法在樹脂封裝之後利用上述實施方式的檢查方法來進行檢查。 Further, the resin encapsulation method is inspected after the resin encapsulation by the inspection method of the above embodiment.
根據該方法，能夠在樹脂封裝之後準確地求出基板的厚度或封裝樹脂的厚度。 According to this method, the thickness of the substrate or the thickness of the encapsulating resin can be accurately obtained after the resin is packaged.
此外，樹脂封裝方法在樹脂封裝之前利用上述實施方式的檢查方法來進行檢查，並且在樹脂封裝之後也利用上述實施方式的檢查方法來進行檢查。 Further, the resin encapsulation method is inspected by the inspection method of the above-described embodiment before resin encapsulation, and is also inspected by the inspection method of the above embodiment after resin encapsulation.
根據該方法，能夠在樹脂封裝之前準確地求出基板的厚度，並且能夠在樹脂封裝之後準確地求出樹脂封裝的厚度。 According to this method, the thickness of the substrate can be accurately obtained before the resin is packaged, and the thickness of the resin package can be accurately obtained after the resin package.
此外，樹脂封裝品的製造方法使用上述實施方式的樹脂封裝方法來製造樹脂封裝品。 Further, in the method of producing a resin package, a resin package is produced by using the resin sealing method of the above embodiment.
根據該製造方法，能夠在樹脂封裝之前或樹脂封裝之後進行檢查，從而製造樹脂封裝品。 According to this manufacturing method, it is possible to perform inspection before or after resin encapsulation, thereby manufacturing a resin package.
本發明並不限定於上述的各實施方式，在不脫離本發明主旨的範圍內，可根據需要，任意且適當組合而進行變更或選擇性地採用。 The present invention is not limited to the above-described embodiments, and may be modified or selectively employed arbitrarily and appropriately combined as needed within the scope of the gist of the invention.
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201818497A (en) | 2018-05-16 |
| KR20190073353A (en) | 2019-06-26 |
| WO2018083918A1 (en) | 2018-05-11 |
| KR102299836B1 (en) | 2021-09-09 |
| CN109716503B (en) | 2023-04-14 |
| JP6284996B1 (en) | 2018-02-28 |
| CN109716503A (en) | 2019-05-03 |
| JP2018074093A (en) | 2018-05-10 |
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