TWI632685B - 功率金屬氧化物半導體場效電晶體及用於製造其之方法 - Google Patents

功率金屬氧化物半導體場效電晶體及用於製造其之方法 Download PDF

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TWI632685B
TWI632685B TW105139730A TW105139730A TWI632685B TW I632685 B TWI632685 B TW I632685B TW 105139730 A TW105139730 A TW 105139730A TW 105139730 A TW105139730 A TW 105139730A TW I632685 B TWI632685 B TW I632685B
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substrate
region
gate electrode
field plate
conductivity type
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TW201724524A (zh
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尤格達拉 亞達佛
陳吉智
柳瑞興
姚智文
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台灣積體電路製造股份有限公司
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Abstract

係提供一種半導體裝置及製造其之方法。該半導體裝置包含一基板、一源極區、一汲極區、一場板、以及一閘電極。該源極區具一第一傳導性類型且位在該基板內的一第一側。該汲極區具該第一傳導性類型且位在與該第一側相對之該基板內的一第二側。該場板位在該基板上方且在該源極區與該汲極區之間。該閘電極的一部份位在該場板上方。

Description

功率金屬氧化物半導體場效電晶體及用於製造其之方法
本揭露係關於一種半導體裝置及製造其之方法。
由於本發明之半導體裝置基於雙極性技術，諸如雙極性接面電晶體(bipolar junction transistor，BJT)，已為了延長這些裝置的應用而對增加他們的功率處理能力作出很大的努力。金屬氧化物半導體場效電晶體(metal-oxide-semiconductor field-effect transistor，MOSFET)係一用於放大或切換電子訊號的電晶體。MOSFET係一四端裝置，具有源極(S)端、閘極(G)端、汲極(D)端、以及本體(B)端。MOSFET是迄今為止在數位及類比電路二者中最常見的電晶體，雖然BJT曾一時是更常見者。 隨著互補式金屬氧化物半導體(Complementary metal-oxide-semiconductor，CMOS)技術得到重視以及積體電路領域中之製程技術超越用於功率裝置之雙極性技術的發展，功率MOSFET被引入。現在有可能將CMOS技術中的穩定進展用於開發改善之功率裝置，諸如功率MOSFET。功率MOSFET與其之雙極性對應物相比可具有優異的性能。例如，n-通道功率MOSFET係以電子傳輸操作，其固有地係較BJT所依賴之組合的電子與電洞傳輸來得快。 功率MOSFET係以與BJT功率裝置相比較佳之切換速度為人所知，且它們因為絕緣之閘極而需要非常少的閘極驅動功率。功率MOSFET的主要缺點是高導通電阻以及覆蓋控制問題。有需要能改善功率MOSFET於高導通電阻以及覆蓋控制問題之性能的方法及設備。
根據本揭露的實施例，閘極電阻Rg可藉由以矽化物層完全覆蓋功率MOSFET的閘電極而減少，以便改善功率MOSFET的切換損失及死區時間問題。此外，藉由使用間隔件來自對準汲極區的植入，可防止非所欲之汲極區的植入離子被植入/穿透到介電層之下，以便改善覆蓋控制問題以及減少裝置性能變化。 根據一實施例，一種半導體裝置係包含一基板、一源極區、一汲極區、一場板、以及一閘電極。該源極區具一第一傳導性類型且位在該基板內的一第一側。該汲極區具該第一傳導性類型且位在與該第一側相對之該基板內的一第二側。該場板係在該基板上方且在該源極區與該汲極區之間。該閘電極具有一第一部分以及一第二部分，其中該閘電極的該第一部分位在該場板上方。 根據另一實施例，一種半導體裝置係包含一基板、一漂移區、一第二區、一源極區、一汲極區、一場板、以及一閘電極。該漂移區係具一第一傳導性類型、自該基板的一頂部表面延伸至該基板中、且位在接近該基板的一第一側。該第二區係具一第二傳導性類型、自該基板的該頂部表面延伸至該基板中、且位在接近與該第一側相對之該基板的一第二側。該源極區係具一第一傳導性類型且在該第二區內。該汲極區係具該第一傳導性類型且在該漂移區內。該場板係在該漂移區上方。該閘電極係在該第一區以及該漂移區上方，其中該閘電極的一頂部表面係被一矽化物層實質上完全覆蓋。 根據另一實施例，一種製造一半導體裝置之方法係包含：提供一基板；形成一源極區具一第一傳導性類型且在該基板內的一第一側；形成一汲極區具該第一傳導性類型且位在與該第一側相對之該基板內的一第二側；形成一場板在該基板上方且在該源極區與該汲極區之間；以及在形成該場板之後，形成一閘電極在該基板上方。
本揭露實施例之製作以及使用係詳細討論如下。然而，應了解該等實施例提供許多可在廣泛種類的特定背景下體現之可應用發明性概念。所討論的特定實施例僅為說明性，且不限定本揭露之範疇於此。 將理解，當一元件或層被稱作"在...上(on)"、“連接至(connected to)”、或“耦合至(coupled to)”另一元件或層時，其可以是直接在其他元件或層上、或直接連接或耦合至其他元件或層、或者可出現中介元件或層。相反地，當一元件被稱作"直接在...上(directly on)"、“直接連接至(directly connected to)”、或“直接耦合至(directly coupled to)”另一元件或層時，沒有出現中介元件或層。 將理解，雖然可於本文中使用辭彚第一、第二、第三、等來描述各種元件、組件、區、層、及/或區段，但這些元件、組件、區、層、及/或區段不應受這些辭彚所限。這些辭彚僅用於將一個元件、組件、區、層、或區段與另一個區、層、或區段區別。因此，下面所描述的一第一元件、組件、區、層、或區段可被稱為一第二元件、組件、區、層、或區段而不會悖離本發明性概念的教示。 空間相關詞彙，諸如“之下(beneath)”、“下面(below)”、“下(lower)”、“上面(above)”、“上(upper)”和類似詞彙，可為了使說明書便於描述如圖式繪示的一個元件或特徵與另一個（或多個）元件或特徵的關係而使用於本文中。將理解到，除了圖式中所畫的方位外，這些空間相對詞彙也意圖用來涵蓋裝置在使用中或操作時的不同方位。例如，若將圖示中之裝置翻面，被描述成在其他元件或特徵“下面”或“之下”之元件則將定位成在其他元件或特徵“上面”。因此，例示性詞彙“上面”或“下面”可涵蓋上面方位及下面方位二者。該裝置可以其他方式定向(旋轉90度或於其它方位)，據此解釋在本文中所使用的這些空間相關說明符。 本文中所使用的名詞只是為了描述具體例示實施例目的而不是意圖限制本發明性概念。除非內文中有明確另行指明，於本文中使用時，單數形式“一(a)”、“一(an)”、以及“該(the)”係意圖也包括複數形式。將進一步理解到，辭彚“包含(comprises)”及/或“包含(comprising)”—當於說明書中使用時，指明所稱特徵、整數、步驟、操作、元件、及/或組件之存在，但並不排除一或多個其它特徵、整數、步驟、操作、元件、組件、及/或其群組之存在或增加。 本說明書全文中提及"一個實施例(one embodiment)”或“一實施例(an embodiment)”係意指相關於該實施例描述的一具體之特徵、結構、或特性係包括在至少一個實施例中。因此，在本說明書全文的各種位置中出現短語“在一個實施例中(in one embodiment)”或“在一實施例中(in an embodiment)”不必然都指相同實施例。再者，具體之特徵、結構、或特性可以以任何合適的方式組合於一或多個實施例中。應了解，以下圖示不是依比例繪製，反而這些圖示僅意圖用於例示說明。 圖1係根據本揭露的一個實施例的一功率金屬氧化物半導體場效電晶體(MOSFET)1。功率MOSFET包括一基板10、一源極區20、一汲極區30、一閘電極40、以及一場板50。 基板10可以是一p型摻雜基板、或一n型摻雜基板，其意指半導體基板10可經n型或p型雜質摻雜。該基板10係自矽、砷化鎵、矽鍺、矽碳、或在半導體裝置加工中使用的其它已知半導體材料形成。雖然在本文中所呈現之經繪示實例中使用一半導體基板，在其他替代性實施例中，可使用磊晶生長半導體材料或絕緣體上矽(silicon on insulator，SOI)層作為基板10。 摻雜物雜質可植入到一半導體材料中以形成一p型或一n型材料係通常知識。取決於摻雜物的濃度，一p型材料可進一步分類成p++型材料、p+型材料、p型材料、p−型材料、p−−型材料。若稱一材料為一p型材料，其係經p型雜質摻雜且其可以是p++型材料、p+型材料、p型材料、p−型材料、p−−型材料的任一者。類似地，一n型材料可進一步分類成n++型材料、n+型材料、n型材料、n−型材料、n−−型材料。若稱一材料為一n型材料，其係經n型雜質摻雜且其可以是n++型材料、n+型材料、n型材料、n−型材料、n−−型材料的任一者。p型材料的摻雜物原子包括例如硼。在n型材料中，摻雜物原子包括例如磷、砷、及銻。可透過離子植入製程完成摻雜。當與光微影製程耦合時，藉由將原子植入暴露的區域中並遮蓋其他區域的方式可在選定的區域中實施摻雜。也可使用熱驅動或退火循環以利用熱擴散來擴大或延伸一先前摻雜區。作為替代者，半導體材料的一些磊晶沉積允許磊晶製程期間之原位摻雜。可透過某些材料，諸如薄氧化物層完成植入係通常知識。 所述之井區的摻雜濃度量以及擴散可隨所使用製程以及具體設計而變化。一p型材料或一n型材料的摻雜濃度可在自1014 個原子/cm3 至1022 個原子/cm3 之範圍，例如一具有高於約1018 /cm3 濃度的p+/n+材料。可使用一些其它濃度範圍，諸如一具有小於1014 個原子/cm3 摻雜濃度的一n−−/p−−材料、一具有自1014 個原子/cm3 至1016 個原子/cm3 範圍之摻雜濃度的n−/p−材料、一具有自1016 個原子/cm3 至1018 個原子/cm3 範圍之摻雜濃度的n/p材料、一具有自1018 個原子/cm3 至1020 個原子/cm3 範圍之摻雜濃度的n+/p+材料、以及一具有大於1020 個原子/cm3 範圍之摻雜濃度的n++/p++材料。可使用進一步替代濃度範圍，諸如一具有約1015 至1018 /cm3 範圍之摻雜濃度的n−−/p−−材料、以及一n−/p−材料，其具有之摻雜濃度係n−−/p−−材料濃度的5至100倍濃。 如圖1所顯示，基板10包括一第一區11、一第二區13、一漂移區12、以及絕緣區15。 絕緣區15自基板10的一頂部表面延伸至基板10中。絕緣區15可以是淺溝渠絕緣(Shallow Trench Isolation，STI)區。在另一實施例中，絕緣區15也可以是其它類型的絕緣區，諸如場氧化物區。 具一第二傳導性類型的第一區11係藉由下列形成：將具一第二傳導性類型諸如一p型的一雜質的離子植入通過一絕緣膜而至基板10中，以及接著熱擴散經植入離子。第一區11可具有一雜質濃度在約1015 個/cm3 與約1017 個/cm3 之間，雖然也可使用一較高或一較低濃度。可能有一n+埋層(n+ buried layer，NBL)形成在第一區11之下，其係未顯示。 具第二傳導性類型諸如p型的第二區13係在第一區11內，且係藉由絕緣區15而與其它裝置分開。在一些例示性實施例中，第二區13具有高於第一區11的雜質濃度的一p型雜質濃度。例如，第二區13的p型雜質濃度可以是在約1016 個/cm3 與約1018 個/cm3 之間，雖然也可採用一較高或一較低雜質濃度。 具一第一傳導性類型諸如一n型的漂移區12係在第一區11內。根據一個實施例，漂移區包括一第一漂移區12a以及一第二漂移區12b。第一漂移區12a自基板10的頂部表面延伸至基板10中。第一漂移區12a的n型雜質濃度可以是在約1015 個/cm3 與約1017 個/cm3 之間，雖然也可採用較高或較低雜質濃度。 第二漂移區12b係在第一區11內、相鄰於第一漂移區12a、且具有一深度係小於第一漂移區12a的一深度而使得第一漂移區12a與第二漂移區12b一起形成一階梯式形狀。第二漂移區12b可具有相似於第一漂移區12a的雜質濃度之第一傳導性類型的一雜質濃度。然而，在一些其它實施例中，第二漂移區12b可具有不同於第一漂移區12a的雜質濃度之第二傳導性類型的一雜質濃度。 具第一傳導性類型之源極區20係在第二區13內。具第一傳導性類型之汲極區30係在第一漂移區12a內。源極區20可具有一源極接點(圖中未顯示)。汲極區30可具有一汲極接點(圖中未顯示)。源極區20以及汲極區30二者都是藉由植入具一第一傳導性類型，諸如一n型的一雜質的離子分別至第二區13以及第一漂移區12a中所形成。源極區20以及汲極區30可藉由植入一n型摻雜物，諸如磷至一濃度例如在約1×1019 個/cm3 與約2×1021 個/cm3 之間形成。替代地，也可使用其他n型摻雜物，諸如砷、銻、或其組合。 一介電層51係在基板10的頂部表面上且覆蓋第一漂移區12a的一部份以及第二漂移區12b的一部份。介電層51可包括氧化矽、氮化矽、氧氮化矽、高k介電材料、其組合、或其之多層。介電層51可具有一厚度係在約100埃(Å)與約2,500 Å之間，雖然也可用不同厚度。介電層51的厚度可基於相應功率MOSFET 1的所欲崩潰電壓（請將圖中這個數字劃底線）選擇。較高崩潰電壓要求較大厚度，而較低崩潰電壓要求較小厚度。 場板50係放在介電層51的頂部表面上並覆蓋介電層51的一部份。場板50可包括導電材料，諸如多晶矽、金屬、金屬矽化物、或類似物。 一介電層52係在場板50的頂部表面上且覆蓋場板50，而使得介電層52的側表面實質上對準場板50的側表面。介電層52可包括氧化矽、氮化矽、氧氮化矽、高k介電材料、其組合、或其之多層。在一個實施例中，介電層52的材料係相同於介電層51所具者。在另一實施例中，介電層52的材料係不同於介電層51所具者。 場板50、以及介電層52、以及閘電極40係定義多晶矽-絕緣體-多晶矽(Poly-Insulator-Poly，PIP)電容器。可基於設計要求而藉由選擇介電層52的尺寸及材料而判定PIP電容器的電容。因此，係更彈性地設計功率MOSFET 1的電容。 間隔件53係在介電層51的一側上且與由場板50的側表面與介電層52的側表面所定義的一共平面表面接觸。間隔件53的側表面係實質上對準介電層51的側表面。間隔件54係在介電層51的另一側上且與由場板50的側表面與介電層52的側表面所定義的一共平面表面接觸。間隔件54的側表面係實質上對準介電層51的側表面。 一間隔件55係在基板的頂部表面上且可覆蓋汲極區30的一部份以及第一漂移區12a的一部份。間隔件55係與由間隔件53的側表面與介電層51的側表面所定義的一共平面表面接觸。間隔件55可防止非所欲之汲極區30的植入離子被植入/穿透到介電層51之下。當非所欲之汲極區30的植入離子擴散至漂移區12，影響一重摻雜區諸如汲極區30的一經定義輪廓時，裝置性能變化會增加(諸如導通電阻及崩潰電壓)。藉由使用間隔件55來防止非所欲之汲極區30的植入離子被植入/穿透到介電層51之下，這將會改善覆蓋控制問題以便減少裝置性能變化。 一閘極介電質43係在基板10的頂部表面上且可覆蓋第二區13的一部份以及第二漂移區12b的一部份。閘極介電質43係與介電層51的側表面接觸。在一些實施例中，閘極介電質43可包括氧化矽、氮化矽、高k介電材料、其之多層、或其組合。 閘電極40包括兩個部分，閘電極的一第一部分40a以及閘電極的一第二部分40b。閘電極的第一部分40a係放在間隔件54以及介電層52上，且覆蓋間隔件54以及介電層52的一部份。閘電極的第二部分40b係放在閘極介電質43上，且覆蓋閘極介電質43。閘電極的第二部分40b的一第一側表面40b1係與由介電層51的側表面與間隔件54的側表面所定義的一共平面表面接觸。閘電極的第二部分40b的一第二側表面40b2(與第一側表面40b1相對)係對準閘極介電質43的側表面。閘電極40可包括導電材料，諸如摻雜多晶矽、金屬、金屬合物、或類似物。 一矽化物層42係在閘電極40的頂部表面上且完全覆蓋閘電極40。換句話說，矽化物層42的各側實質上對準閘電極40的各側。矽化物層42可藉由一自對準矽化物製程而形成在閘電極40上。 由於閘電極40被矽化物層42完全覆蓋，功率MOSFET 1與其中閘電極被矽化物層部分覆蓋之習用功率MOSFET相比係具有較小閘極電阻Rg。在一個實施例中，相較於習用功率MOSFET，功率MOSFET 1的閘極電阻Rg至少小3倍。功率MOSFET的切換損失及死區時間（dead time）可藉由減少閘極電阻Rg改善。此將改善電路的效率及性能。 一間隔件41係在基板10的頂部表面上且可覆蓋源極區20的一部份。間隔件41係與由閘極介電質43的側表面與閘電極的第二部分40b的側表面所定義的一共平面表面接觸。 圖2係顯示一功率MOSFET之性能的圖。x軸顯示崩潰電壓(breakdown voltage，BV)，而y軸顯示導通電阻(on resistance，Ron)。圖2中所顯示之虛線表示一功率MOSFET的矽極值。崩潰電壓以及導通電阻較接近矽極值的一功率MOSFET係表現較佳。如圖2所顯示，圖1中之功率MOSFET 1的崩潰電壓以及導通電阻係遠較所有習用功率MOSFET所具者更接近矽極值。因此，與習用功率MOSFET相比，圖1中所顯示之功率MOSFET 1具有較佳性能。 圖3A至3F係根據一些實施例以剖面圖繪示製造一功率MOSFET的一製程。所得功率MOSFET可以是圖1中所顯示之功率MOSFET 1。可使用替代方法製作圖1中所顯示之功率MOSFET 1或該功率MOSFET的替代性實施例。 如圖3A中所繪示者，係提供一基板310。一視需要n+埋層(NBL)可形成在基板310的一部份中(圖中未顯示)。係形成複數個絕緣區315，其可以是淺溝渠絕緣(STI)區，而自基板310的頂部表面延伸至基板310中。 具一第二傳導性類型的第一區311係藉由下列形成：將具一第二傳導性類型諸如一p型的一雜質的離子植入通過一絕緣膜而至基板310中，以及接著熱擴散經植入離子。第一區11可具有一雜質濃度在約1015 個/cm3 與約1017 個/cm3 之間，雖然也可使用一較高或一較低濃度。 具一第一傳導性類型諸如一n型的漂移區312係形成在第一區311內。根據一個實施例，漂移區包含一第一漂移區312a以及一第二漂移區312b。第一漂移區312a自基板310的頂部表面延伸至基板310中。第一漂移區312a的n型雜質濃度可以是在約1015 個/cm3 與約1017 個/cm3 之間，雖然也可採用較高或較低雜質濃度。 第二漂移區312b係在形成第一區311內、相鄰於第一漂移區312a、且具有一深度係小於第一漂移區312a的一深度而使得第一漂移區312a與第二漂移區312b一起形成一階梯式形狀。第二漂移區312b可具有相似於第一漂移區312a的雜質濃度之第一傳導性類型的一雜質濃度。然而，在一些其它實施例中，第二漂移區312b可具有不同於第一漂移區312a的雜質濃度之第二傳導性類型的一雜質濃度。第一漂移區312a以及第二漂移區312b可同時形成。在另一實施例中，第一漂移區312a以及第二漂移區312b可在不同時間形成。 一介電層351係形成在基板310的頂部表面上且覆蓋基板310的頂部表面。介電層351可包括氧化矽、氮化矽、氧氮化矽、高k介電材料、其組合、或其之多層。介電層351可具有一厚度係在約100 Å與約2,500 Å之間，雖然也可用不同厚度。介電層351的厚度可基於相應功率MOSFET的所欲崩潰電壓選擇。較高崩潰電壓要求較大厚度，而較低崩潰電壓要求較小厚度。 場板350係形成在介電層351的頂部表面上並覆蓋介電層351的一部份。場板350可包含導電材料，諸如多晶矽、金屬、金屬矽化物、或類似物。 一介電層352係形成在場板350的頂部表面上且覆蓋場板350，而使得介電層352的側表面實質上對準場板350的側表面。介電層352可包括氧化矽、氮化矽、氧氮化矽、高k介電材料、其組合、或其之多層堆疊體。在一個實施例中，介電層352的材料係相同於介電層351所具者。在另一實施例中，介電層352的材料係不同於介電層351所具者。 參考圖3B，一間隔件353係形成在介電層351的一個外圍區上且與由場板350的側表面與介電層352的側表面所定義的一共平面表面接觸。一間隔件354係形成在介電層51的另一外圍區上且與由場板50的側表面與介電層52的側表面所定義的一共平面表面接觸。在一些實施例中，從俯視立體觀看時介電層351的該等外圍區形成一閉合環形形狀的一閉合多邊形(圖3B中未顯示)。 係移除未被場板350覆蓋之介電層351的一部份以及間隔件353、354，而使得介電層351的側表面實質上對準間隔件353、354的側表面。 參考圖3C，一閘極介電質343係形成在基板310的頂部表面上且可覆蓋第一漂移區312a的一部份以及第二漂移區312b的一部份。閘極介電質343係與介電層351的側表面接觸。在一些實施例中，閘極介電質343可包含氧化矽、氮化矽、高k介電材料、其之多層、或其組合。 係形成閘電極340以覆蓋基板310、閘極介電質343、間隔件353、354、以及介電層352。閘電極340可包含導電材料，諸如摻雜多晶矽、金屬、金屬合物、或類似物。 參考圖3D，係移除閘電極340的一第一部分以暴露出漂移區的第二部分312b的一部份。接著實施一植入，以摻雜漂移區的第二部分312b之暴露的部分，而形成一第二區313。第二區313係形成在第一區311內，且在絕緣區315旁邊。在一些例示性實施例中，第二區313具有高於第一區311的雜質濃度的一p型雜質濃度。也可藉由其他方法形成第二區313。 參考圖3E，係移除閘電極340的一第二部分。閘電極340的剩餘部分係包括兩個部分，閘電極的一第一部分340a以及閘電極的一第二部分340b。閘電極的第一部分340a係在間隔件354以及介電層352上，且覆蓋間隔件354以及介電層352的一部份。閘電極的第二部分340b係在閘極介電質343上，且覆蓋閘極介電質343。閘電極的第二部分340b的一第一側表面340b1係與由介電層351的側表面與間隔件354的側表面所定義的一共平面表面接觸。閘電極的第二部分340b的一第二側表面340b2(與第一側表面340b1相對)係對準閘極介電質343的側表面。 一間隔件341係形成在基板310的頂部表面上且可覆蓋第二區313的一部份。間隔件341係與由閘極介電質343的側表面與閘電極的第二部分340b的側表面所定義的一共平面表面接觸。 一間隔件355係形成在基板310的頂部表面上且可覆蓋第一漂移區312a的一部份。間隔件355係與由間隔件353的側表面與介電層351的側表面所定義的一共平面表面接觸。 具第一傳導性類型的源極區320是藉由植入具一第一傳導性類型諸如一n型的一雜質的離子至第二區313中而形成在第二區313內。具第一傳導性類型的汲極區330是藉由植入具一第一傳導性類型諸如一n型的一雜質的離子至第一漂移區312a中而形成在第一漂移區312a內。源極區320可具有一源極接點(圖中未顯示)。汲極區330可具有一汲極接點(圖中未顯示)。源極區320以及汲極區330可藉由植入一n型摻雜物，諸如磷至一濃度例如在約1×1019 個/cm3 與約2×1021 個/cm3 之間形成。替代地，也可使用其他n型摻雜物，諸如砷、銻、或其組合。 當將具一第一傳導性類型的一雜質的離子植入至第二區313中以形成汲極區330時，間隔件355作為一硬遮罩，以自對準汲極區330的植入並防止汲極區330的非所欲之植入離子被植入/穿透到介電層351之下。於植入之後的一後退火操作期間，在場板下方之摻雜物的擴散可能更嚴重。此將改善覆蓋控制問題並減少裝置性能變化。 參考圖3F，一矽化物層342係形成在閘電極340的頂部表面上並完全覆蓋閘電極340，而形成如圖1所顯示之功率MOSFET 1。矽化物層342的各側實質上對準閘電極340的各側。矽化物層342可透過一自對準矽化物製程而形成在閘電極340上。 由於形成閘電極340係發生在形成場板350之後，閘電極340可被矽化物層342完全覆蓋。通過這樣，功率MOSFET 1與其中閘電極被矽化物層部分覆蓋之習用功率MOSFET相比係具有較小閘極電阻Rg。在一個實施例中，功率MOSFET 1的閘極電阻Rg係習用功率MOSFET所具者的至少3倍小。功率MOSFET的切換損失及死區時間可藉由減少閘極電阻Rg改善。此將改善電路效率及性能。 圖3A至3F所顯示之製程僅為說明性且而不是限制性。可以有製程步驟的其它變化，且可以不同順序實施製程步驟。其他製程步驟可接續在圖3A至3F所顯示之製程之後。例如，可形成一接觸插塞以存取場板。源極區可具有一源極接點。汲極區可具有一汲極接點。 根據本揭露的實施例，閘極電阻Rg可藉由以矽化物層完全覆蓋功率MOSFET的閘電極而減少，以便改善功率MOSFET的切換損失及死區時間問題。此外，藉由使用間隔件來自對準汲極區的植入，可防止非所欲之汲極區的植入離子被植入/穿透到介電層之下，以便改善覆蓋控制問題以及減少裝置性能變化。 根據一實施例，一種半導體裝置係包含一基板、一源極區、一汲極區、一場板、以及一閘電極。該源極區具一第一傳導性類型且位在該基板內的一第一側。該汲極區具該第一傳導性類型且位在與該第一側相對之該基板內的一第二側。該場板係在該基板上方且在該源極區與該汲極區之間。該閘電極具有一第一部分以及一第二部分，其中該閘電極的該第一部分位在該場板上方。 根據另一實施例，一種半導體裝置係包含一基板、一漂移區、一第二區、一源極區、一汲極區、一場板、以及一閘電極。該漂移區係具一第一傳導性類型、自該基板的一頂部表面延伸至該基板中、且位在接近該基板的一第一側。該第二區係具一第二傳導性類型、自該基板的該頂部表面延伸至該基板中、且位在接近與該第一側相對之該基板的一第二側。該源極區係具一第一傳導性類型且在該第二區內。該汲極區係具該第一傳導性類型且在該漂移區內。該場板係在該漂移區上方。該閘電極係在該第一區以及該漂移區上方，其中該閘電極的一頂部表面係被一矽化物層實質上完全覆蓋。 根據另一實施例，一種製造一半導體裝置之方法係包含：提供一基板；形成一源極區具一第一傳導性類型且在該基板內的一第一側；形成一汲極區具該第一傳導性類型且位在與該第一側相對之該基板內的一第二側；形成一場板在該基板上方且在該源極區與該汲極區之間；以及在形成該場板之後，形成一閘電極在該基板上方。 前面列述了數個實施例的特徵以便本技術領域具有通常知識者可更佳地理解本揭露之態樣。本技術領域具有通常知識者應了解他們可輕易地使用本揭露作為用以設計或修改其他裝置或電路之基礎以實現本文中所介紹實施例的相同目的或達成本文中所介紹實施例的相同優點。本技術領域具有通常知識者也應體認到此等均等結構不會背離本揭露之精神及範疇，以及他們可在不背離本揭露之精神及範疇下做出各種改變或變更。
1‧‧‧功率金屬氧化物半導體場效電晶體/功率MOSFET
10‧‧‧基板/半導體基板
11、311‧‧‧第一區
12、312‧‧‧漂移區
12a、312a‧‧‧第一漂移區
12b‧‧‧第二漂移區
13、313‧‧‧第二區
15、315‧‧‧絕緣區
20、320‧‧‧源極區
30、330‧‧‧汲極區
310‧‧‧基板
312b‧‧‧第二漂移區/漂移區的第二部分
40、340‧‧‧閘電極
40a、340a‧‧‧閘電極的第一部分
40b、340b‧‧‧閘電極的第二部分
40b1、340b1‧‧‧第一側表面
40b2、340b2‧‧‧第二側表面
41、53、54、55、341、353、354、355‧‧‧間隔件
42、342‧‧‧矽化物層
43、343‧‧‧閘極介電質
50、350‧‧‧場板
51、52、351、352‧‧‧介電層
本揭露的一或多個實施例的詳情係陳述於下面說明及隨附圖式中。本揭露的其他特徵與優點將從說明書、圖式及申請專利範圍明顯得知。 圖1係根據一些實施例之功率MOSFET的示意圖。 圖2係顯示根據一些實施例之功率MOSFET之性能的圖。 圖3A至3F係根據一些實施例繪示製造功率MOSFET之製程。 在各式圖式中之類似參考符號係指類似元件。

Claims (10)

  1. 一種半導體裝置，其包含：一基板；一源極區，具一第一傳導性類型且位在該基板內的一第一側；一汲極區，具該第一傳導性類型且位在與該第一側相對之該基板內的一第二側；一場板，在該基板上方且在該源極區與該汲極區之間；一閘電極，具有一第一部分以及一第二部分，其中該閘電極的該第一部分位在該場板上方；一第一介電質，具有一頂表面及一底表面，該頂表面與該閘電極接觸，該底表面與該基板接觸；一第二介電質，位在該場板與該基板之間；一第三介電質，位在該閘電極的該第一部分與該場板之間；以及一第一間隔件，位在該基板上、與該第二介電質接觸且與該場板相鄰，該第一間隔件的一側對準該汲極區的一邊界。
  2. 如請求項1之半導體裝置，其中該第一介電質位在該閘電極的該第二部分與該基板之間。
  3. 如請求項1之半導體裝置，其中該第二介電質的一厚度係與該第三介電質所具者不同。
  4. 如請求項1之半導體裝置，其進一步包含：一第二間隔件，係與該閘電極的該第二部分以及該場板接觸。
  5. 如請求項1之半導體裝置，其中該基板包含：一第一區，自該基板的一頂部表面延伸至該基板中，其中該第一區係具一第二傳導性類型；一第二區，具該第二傳導性類型且形成在該第一區內的一第一側，其中該源極區係形成在該第二區內；一漂移區，具該第一傳導性類型且形成在與該第一側相對之該第一區內的一第二側，其中該汲極區係形成在該漂移區內，其中包括以下情事之一者：該第一區的一雜質濃度係與該第二區的一雜質濃度不同；以及該漂移區的一雜質濃度係與該汲極區的一雜質濃度不同。
  6. 一種半導體裝置，其包含：一基板；一漂移區，具一第一傳導性類型、自該基板的一頂部表面延伸至該基板中、且位在接近該基板的一第一側；一第二區，具一第二傳導性類型、自該基板的該頂部表面延伸至該基板中、且位在接近與該第一側相對之該基板的一第二側；一源極區，具一第一傳導性類型且在該第二區內；一汲極區，具該第一傳導性類型且在該漂移區內；一場板，在該漂移區上方；一閘電極，在該漂移區上方，其中該閘電極的一頂部表面係被一矽化物層實質上完全覆蓋；以及一第一間隔件，在該基板上且與該場板相鄰，該第一間隔件的一側對準該汲極區的一邊界。
  7. 如請求項6之半導體裝置，其中該閘電極的一第一部分係在該場板上方。
  8. 如請求項7之半導體裝置，其進一步包含：一閘極氧化物，在該閘電極的一第二部分與該基板之間；以及一多晶矽層間氧化物，位在該閘電極的該第一部分與該場板之間。
  9. 如請求項8之半導體裝置，其進一步包含：一第二間隔件，係與該閘電極的該第二部分以及該場板接觸。
  10. 一種製造一半導體裝置之方法，該方法包含：提供一基板；形成一源極區具一第一傳導性類型且在該基板內的一第一側；形成一汲極區具該第一傳導性類型且位在與該第一側相對之該基板內的一第二側；形成一場板氧化物在該基板上方；形成一場板在該該場板氧化物上方且在該源極區與該汲極區之間；在形成該場板之後，形成一閘電極在該基板上方，該閘電極的一第一部份在該場板上方；形成一多晶矽層間氧化物在該閘電極的該第一部分與該場板之間；以及形成一第一間隔件在該基板上且與該場板氧化物接觸。
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US10269954B2 (en) 2019-04-23
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US11967645B2 (en) 2024-04-23
US9871134B2 (en) 2018-01-16
US20180130904A1 (en) 2018-05-10
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US11088277B2 (en) 2021-08-10
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US20210359129A1 (en) 2021-11-18
US20200279948A1 (en) 2020-09-03

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