TWI631608B - Mask integrated surface protection tape - Google Patents
Mask integrated surface protection tape Download PDFInfo
- Publication number
- TWI631608B TWI631608B TW105136426A TW105136426A TWI631608B TW I631608 B TWI631608 B TW I631608B TW 105136426 A TW105136426 A TW 105136426A TW 105136426 A TW105136426 A TW 105136426A TW I631608 B TWI631608 B TW I631608B
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- adhesive layer
- surface protection
- material layer
- protection tape
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 149
- 239000010410 layer Substances 0.000 claims abstract description 139
- 239000012790 adhesive layer Substances 0.000 claims abstract description 120
- 239000004065 semiconductor Substances 0.000 claims abstract description 116
- 230000000873 masking effect Effects 0.000 claims abstract description 69
- 238000005520 cutting process Methods 0.000 claims abstract description 61
- 229920006243 acrylic copolymer Polymers 0.000 claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 claims abstract description 42
- 239000000853 adhesive Substances 0.000 claims abstract description 33
- 230000001070 adhesive effect Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims description 65
- 239000004848 polyfunctional curative Substances 0.000 claims description 43
- 230000005855 radiation Effects 0.000 claims description 19
- 229920001577 copolymer Polymers 0.000 claims description 17
- 238000004380 ashing Methods 0.000 claims description 16
- 239000012948 isocyanate Substances 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000009477 glass transition Effects 0.000 claims description 10
- 238000005510 radiation hardening Methods 0.000 claims description 10
- 239000000178 monomer Substances 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 8
- 150000002513 isocyanates Chemical class 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229920005672 polyolefin resin Polymers 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 214
- 238000000034 method Methods 0.000 description 60
- 239000010408 film Substances 0.000 description 41
- 239000000203 mixture Substances 0.000 description 20
- -1 polyethylene Polymers 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000012545 processing Methods 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 11
- 229920001684 low density polyethylene Polymers 0.000 description 11
- 239000004702 low-density polyethylene Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 241001050985 Disco Species 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical group CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 4
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 239000003522 acrylic cement Substances 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
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- 230000002829 reductive effect Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical group CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 2
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical class CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- SCWNYUDYCSFNTK-UHFFFAOYSA-N 1-(9h-fluoren-1-yl)prop-2-en-1-one Chemical group C1C2=CC=CC=C2C2=C1C(C(=O)C=C)=CC=C2 SCWNYUDYCSFNTK-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- NXSQQKKFGJHACS-UHFFFAOYSA-N 2-methyl-6-propylphenol Chemical compound CCCC1=CC=CC(C)=C1O NXSQQKKFGJHACS-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- SENMPMXZMGNQAG-UHFFFAOYSA-N 3,4-dihydro-2,5-benzodioxocine-1,6-dione Chemical compound O=C1OCCOC(=O)C2=CC=CC=C12 SENMPMXZMGNQAG-UHFFFAOYSA-N 0.000 description 1
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical class C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical class C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- GWGWXYUPRTXVSY-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=C(C)C=C1 Chemical compound N=C=O.N=C=O.CC1=CC=C(C)C=C1 GWGWXYUPRTXVSY-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- AVUYXHYHTTVPRX-UHFFFAOYSA-N Tris(2-methyl-1-aziridinyl)phosphine oxide Chemical compound CC1CN1P(=O)(N1C(C1)C)N1C(C)C1 AVUYXHYHTTVPRX-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000001541 aziridines Chemical class 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- SJRQIUVIXTUQLI-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) benzene-1,4-dicarboxylate;prop-2-enoic acid Chemical class OC(=O)C=C.C=1C=C(C(=O)OCC2OC2)C=CC=1C(=O)OCC1CO1 SJRQIUVIXTUQLI-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 230000001186 cumulative effect Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
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- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical class O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical class CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- LPNBBFKOUUSUDB-UHFFFAOYSA-N p-toluic acid Chemical compound CC1=CC=C(C(O)=O)C=C1 LPNBBFKOUUSUDB-UHFFFAOYSA-N 0.000 description 1
- AQIXEPGDORPWBJ-UHFFFAOYSA-N pentan-3-ol Chemical compound CCC(O)CC AQIXEPGDORPWBJ-UHFFFAOYSA-N 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001228 polyisocyanate Chemical class 0.000 description 1
- 239000005056 polyisocyanate Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
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- 230000009257 reactivity Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- ITHPEWAHFNDNIO-UHFFFAOYSA-N triphosphane Chemical compound PPP ITHPEWAHFNDNIO-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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Abstract
一種遮罩一體型表面保護帶,用於藉由電漿切割製造半導體晶片,該遮罩一體型表面保護帶具有基材膜、設置於該基材膜上之黏著劑層及設置於該黏著劑層上之遮罩材料層,該遮罩材料層及該黏著劑層均含有(甲基)丙烯酸系共聚物。
Description
本發明係關於一種遮罩一體型表面保護帶。
近來半導體晶片向薄膜化、小晶片化之發展顯著,尤其對於如記憶卡或智慧型卡般內置有半導體IC晶片之IC卡要求薄膜化,又,對於LED、LCD驅動用器件等要求小晶片化。認為今後伴隨該等需要之增加,半導體晶片之薄膜化、小晶片化之需求會更進一步提高。
該等半導體晶片可藉由以下方法獲得,即,將半導體晶圓於背面研磨(back grind)步驟或蝕刻步驟等中薄膜化成規定厚度之後,經切割(dicing)步驟分割成各個晶片。於該切割步驟中,使用藉由切割刀片而切斷之刀片切割方式。於刀片切割方式中,於切斷時刀片所導致之切削阻力直接施加至半導體晶圓。因此,有時會因該切削阻力而於半導體晶片產生微小之缺損(碎片(chipping))。碎片之產生不僅有損半導體晶片之外觀,而且視情形有可能因抗彎強度不足而導致拾取(pick up)時之晶片破損,甚至連晶片上之電路圖案亦破損。又,利用刀片進行之物理切割步驟中,無法使晶片彼此之間隔之切口(kerf)(亦稱為切割線(scribe line)、切割道(street))之寬度較具有厚度之刀片寬度狹小化。該結果使可自一片晶圓取
得之晶片之數量(產率)變少。並且,晶圓之加工時間較長亦為問題。
除刀片切割方式之外,於切割步驟中還利用各種方式。例如有DBG(先切割)方式,其係鑒於使晶圓薄膜化之後進行切割之困難度,而先於晶圓僅以規定之厚度形成溝,然後進行研磨加工而同時進行薄膜化與以晶片為目標之單片化。根據該方式,切口寬度與刀片切割方式為相同程度。然而,具有由於晶片之抗彎強度提昇而可抑制晶片破損之優點。
又,有利用雷射進行切割之雷射切割方式。若根據雷射切割方式,亦有可使切口寬度窄、且可利用乾式製程實施切割之優點。然而,有因利用雷射進行切斷時之昇華物而污染晶圓表面之不良狀況,且有需要利用規定之液狀保護材來保護晶圓表面之預處理之情形。又,雖說為乾式製程,但尚未實現完全的乾式製程。並且,相較於刀片切割方式,雷射切割方式可使處理速度高速化。然而,於逐一生產線進行加工時並無變化,且於極小晶片之製造中相應地要花費時間。
又,亦有以水壓進行切割之噴水(water jet)方式等使用濕式製程之方式。於該方式中,對於MEMS器件或CMOS感測器等之需要高度地抑制表面污染之材料有可能引發問題。又,於切口寬度之狹小化方面存在限制,所獲得之晶片之產率亦低。
又,亦已知於晶圓之厚度方向藉由雷射而形成改質層,進行延伸(expand)加以分割而單片化之隱形切割(stealth dicing)方式。該方式具有可將切口寬度設為零、可利用乾式進行加工之優點。然而,有因改質層形成時之熱歷程而使晶片抗彎強度降低之傾向,又,有於延伸且分割時產生矽屑之情形。並且,與相鄰晶片之碰撞有可能引起抗彎強度不足。
進而,作為將隱形切割與先切割合併之方式,有應對窄劃線寬度之晶片單片化方式,係於薄膜化之前預先以規定之厚度形成改質層,然後自背面進行研磨加工而同時進行薄膜化與以晶片為目標之單片化。該技術係改善上述製程之缺點者,於晶圓背面研磨加工中利用應力將矽之改質層劈開而單片化,故有切口寬度為零且晶片產率高、抗彎強度亦提昇之優點。然而,由於在背面研磨加工中進行單片化,故有可看見晶片端面與相鄰晶片碰撞而導致晶片角缺損之現象的情形。
而且,有電漿切割(plasma dicing)方式(例如,參照專利文獻1)。電漿切割方式係藉由以電漿選擇性地蝕刻未由遮罩覆蓋之部位而對半導體晶圓進行分割之方法。若使用該切割方法,則能夠選擇性地進行晶片之分割,即便切割線彎曲亦可無問題地分割。又,由於半導體晶圓之蝕刻速率非常高,故近年來一直被視為最適於晶片分割的製程之一。
[專利文獻1]日本專利特開2007-19385號公報
於電漿切割方式中,將六氟化硫(SF6)或四氟化碳(CF4)等與晶圓之反應性非常高的氟系氣體用作電漿產生用氣體,由於其高蝕刻速率,故對於未蝕刻之面必須利用遮罩進行保護,從而必須事先形成遮罩。
該遮罩之形成,如專利文獻1中亦記載般,一般採用以下技術:對晶圓之表面塗佈阻劑之後,將與切割道相當之部分於光刻製程中去除而形成遮罩。因此,為了進行電漿切割,需要除電漿切割設備以外之光
刻步驟設備,從而有晶片成本上升之問題。又,於電漿蝕刻後處於殘留有遮罩(阻劑膜)之狀態,故為了去除遮罩而必須使用大量之溶劑,且即便如此有時亦無法完全去除遮罩,從而有產生不良晶片之情形。並且,由於經過阻劑之遮蔽步驟,故亦有整體之處理製程變長之不良狀況。
本發明之目的在於提供一種遮罩一體型表面保護帶,其係於使用有電漿切割方式之半導體晶片之製造中,無需利用光刻製程形成遮罩者,藉由將其貼合於半導體晶圓之圖案面,於半導體晶圓之薄膜化步驟(背面研磨步驟)中可與該圖案面良好地密接而可有效地保護圖案面,上述薄膜化步驟後之遮罩材料層與黏著劑層之剝離性亦良好,藉此可簡單地使遮罩材料層露出於晶圓表面,藉由SF6電漿而能夠將晶圓更確實地、高精度地切割成晶片,進而於電漿切割後(晶圓之分割後),藉由O2電漿而能夠更確實地去除遮罩材料,結果能夠高度地抑制不良晶片之產生。
本發明之上述課題可藉由以下之手段而解決。
[1]
一種遮罩一體型表面保護帶,用於包括下述步驟(a)~(d)之半導體晶片之製造,該遮罩一體型表面保護帶具有基材膜、設置於該基材膜上之黏著劑層及設置於該黏著劑層上之遮罩材料層,該遮罩材料層及該黏著劑層均含有(甲基)丙烯酸系共聚物:(a)在將遮罩一體型表面保護帶貼合於半導體晶圓之圖案面側之狀態下,對該半導體晶圓之背面進行研磨,將晶圓固定帶貼合於研磨後之半導體晶圓之背面,利用環狀框(ring frame)支持固定的步驟;
(b)自上述遮罩一體型表面保護帶將上述基材膜與上述黏著劑層一體地剝離而使遮罩材料層露出於表面之後,藉由雷射將該遮罩材料層中與半導體晶圓之切割道相當之部分切斷,使半導體晶圓之切割道開口的步驟;(c)藉由SF6電漿以上述切割道將將半導體晶圓分割而單片化為半導體晶片之電漿切割步驟;及(d)藉由O2電漿去除上述遮罩材料層之灰化步驟。
[2]
如[1]之遮罩一體型表面保護帶,其中,上述遮罩一體型表面保護帶之黏著劑層為放射線硬化型。
[3]
如[2]之遮罩一體型表面保護帶,其中,於上述步驟(b)中,自上述遮罩一體型表面保護帶將上述基材膜與上述黏著劑層一體地剝離而使遮罩材料層露出於表面之前,包括照射紫外線以使上述黏著劑層硬化之步驟;於利用上述紫外線照射之硬化前,遮罩材料層與半導體晶圓之圖案面之間的密接力及遮罩材料層與黏著劑層之間的密接力均為0.2N/25mm以上,於利用上述紫外線照射之硬化後,遮罩材料層與黏著劑層之間的密接力低於遮罩材料層與半導體晶圓之圖案面之間的密接力。
[4]
如[2]或[3]之遮罩一體型表面保護帶,其中,構成上述黏著劑層之(甲基)丙烯酸系共聚物於支鏈具有乙烯性不飽和鍵。
[5]
如[4]之遮罩一體型表面保護帶,其中,在構成於上述支鏈具有乙烯性不飽和鍵之(甲基)丙烯酸系共聚物之單體成分中,含有醇部之碳數為8~12之(甲基)丙烯酸烷基酯成分。
[6]
如[1]至[5]中任一項之遮罩一體型表面保護帶,其中,上述基材膜具有聚烯烴系樹脂層。
[7]
如[1]至[6]中任一項之遮罩一體型表面保護帶,其中,形成上述黏著劑層之(甲基)丙烯酸系共聚物之玻璃轉移溫度與形成上述遮罩材料層之(甲基)丙烯酸系共聚物之玻璃轉移溫度的差為10℃以上。
[8]
如[1]至[7]中任一項之遮罩一體型表面保護帶,其中,於上述遮罩材料層及上述黏著劑層使用有硬化劑,用於上述遮罩材料層之硬化劑與用於上述黏著劑層之硬化劑之種類不同。
[9]
如[1]至[8]中任一項之遮罩一體型表面保護帶,其中,於上述遮罩材料層使用環氧系硬化劑,於上述黏著劑層使用異氰酸酯系硬化劑。
[10]
如[1]至[9]中任一項之遮罩一體型表面保護帶,其中,上述遮罩材料層含有氟系脫膜材料。
[11]
一種遮罩一體型表面保護帶,其具有基材膜、設置於該基材膜上之黏
著劑層及設置於該黏著劑層上之遮罩材料層,該遮罩材料層及該黏著劑層均含有(甲基)丙烯酸系共聚物及硬化劑,該黏著劑層含有之硬化劑與該遮罩材料層含有之硬化劑之種類不同。
[12]
如[11]之遮罩一體型表面保護帶,其中,於上述遮罩材料層使用環氧系硬化劑,於上述黏著劑層使用異氰酸酯系硬化劑。
[13]
如[11]或[12]之遮罩一體型表面保護帶,其中,上述遮罩一體型表面保護帶之黏著劑層為放射線硬化型。
[14]
如[11]至[13]中任一項之遮罩一體型表面保護帶,其中,上述遮罩材料層含有氟系脫膜材料。
[15]
如[11]至[14]中任一項之遮罩一體型表面保護帶,其中,上述遮罩一體型表面保護帶係電漿切割用。
本發明之遮罩一體型表面保護帶係於使用有電漿切割方式之半導體晶片之製造中無需利用光刻製程形成遮罩之表面保護帶。本發明之遮罩一體型之表面保護帶藉由貼合於半導體晶圓之圖案面而於晶圓之薄膜化步驟中可與該圖案面良好地密接從而可有效地保護圖案面。本發明之遮罩一體型之表面保護帶於上述薄膜化步驟後之遮罩材料層與黏著劑層之剝離性亦良好,藉此可簡單地使遮罩材料層露出於晶圓表面,藉由SF6電漿
而能夠將晶圓更確實地、高精度地切割成晶片。進而,露出於晶圓表面之遮罩材料層藉由O2電漿而可更確實地去除。結果,藉由使用本發明之遮罩一體型之表面保護帶加工半導體晶圓,能夠高度地抑制不良晶片之產生。
本發明之上述及其他特徵及優點應當能夠適當地參照隨附圖式且根據下述記載而明確瞭解。
1‧‧‧半導體晶圓
2‧‧‧圖案面
3‧‧‧遮罩一體型表面保護帶
3a‧‧‧表面保護帶
3aa‧‧‧基材膜
3ab‧‧‧黏著劑層
3b‧‧‧遮罩材料層
4‧‧‧晶圓固定帶
4a‧‧‧黏著劑層或接著劑層
4b‧‧‧基材膜
7‧‧‧晶片
S‧‧‧表面
B‧‧‧背面
M1‧‧‧晶圓研磨裝置
M2‧‧‧銷
M3‧‧‧吸嘴
F‧‧‧環狀框
L‧‧‧雷射(CO2雷射)
P1‧‧‧SF6氣體之電漿
P2‧‧‧O2氣體之電漿
圖1係說明本發明之使用遮罩一體型表面保護帶之第1實施形態中直至對半導體晶圓貼合表面保護帶為止之步驟之概略剖面圖。於該圖中,分圖1(a)表示半導體晶圓,分圖1(b)表示將遮罩一體型表面保護帶貼合於半導體晶圓之狀況,分圖1(c)表示貼合有遮罩一體型表面保護帶之半導體晶圓。
圖2係說明於本發明之使用遮罩一體型表面保護帶之第1實施形態中直至半導體晶圓之薄膜化與固定為止之步驟之概略剖面圖。於該圖中,分圖2(a)表示半導體晶圓之薄膜化處理,分圖2(b)表示將晶圓固定帶貼合於經薄膜化處理之半導體晶圓之狀況,分圖2(c)表示將半導體晶圓固定於環狀框之狀態。
圖3係說明本發明之使用遮罩一體型表面保護帶之第1實施形態中直至遮罩形成為止之步驟的概略剖面圖。於該圖中,分圖3(a)表示自遮罩一體型表面保護帶保留遮罩材料層而剝掉表面保護帶之狀況,分圖3(b)表示遮罩一體型表面保護帶之遮罩材料層已成為露出之狀態,分圖3(c)表示利用雷射切除與切割道部分相當之遮罩材料層之步驟。
圖4係說明本發明之使用遮罩一體型表面保護帶之第1實施形態之電漿切割與電漿灰化之步驟的概略剖面圖。於該圖中,分圖4(a)表示進行電漿切割之狀況,分圖4(b)表示單片化為晶片之狀態,分圖4(c)表示進行電漿灰化之狀況。
圖5係說明本發明之使用遮罩一體型表面保護帶之第1實施形態中直至拾取晶片為止之步驟之概略剖面圖。於該圖中,分圖5(a)表示去除遮罩材料層後之狀態,分圖5(b)表示拾取晶片之狀況。
圖6係說明本發明之使用遮罩一體型表面保護帶之第2實施形態中進行紫外線照射處理之前後之狀態的概略剖面圖。於該圖中,分圖6(a)表示將半導體晶圓之表面及背面之兩面分別由遮罩一體型表面保護帶與晶圓固定帶被覆且固定之狀態,分圖6(b)表示照射紫外線之狀況,分圖6(c)表示自遮罩一體型表面保護帶保留遮罩材料層而剝掉表面保護帶之狀況。
本發明之遮罩一體型表面保護帶用於將半導體晶圓藉由電漿切割而分割、個別化從而獲得半導體晶片之方法。如以下所說明般,藉由使用本發明之遮罩一體型表面保護帶,於電漿切割步驟之前無需光刻製程,從而可大幅抑制半導體晶片或半導體製品之製造成本。
本發明之遮罩一體型表面保護帶具有基材膜、設置於該基材膜上之黏著劑層及設置於該黏著劑層上之遮罩材料層,該遮罩材料層及該黏著劑層均含有(甲基)丙烯酸系共聚物。本發明之遮罩一體型表面保護帶用於半導體加工。更詳細而言,本發明之遮罩一體型表面保護帶於半導體晶
圓之背面研磨時,為了保護圖案面(表面)而貼合於該圖案面來使用。
本發明之遮罩一體型表面保護帶較佳為電漿切割用。即,於自半導體晶圓獲得半導體晶片時,於包括藉由電漿切割而將晶圓分割、個別化之步驟之半導體晶片之製造中可較佳地使用。
本發明之遮罩一體型表面保護帶更佳為用於至少包括下述步驟(a)~(d)之半導體晶片之製造。
(a)在將本發明之遮罩一體型表面保護帶貼合於半導體晶圓之圖案面側之狀態下,對該半導體晶圓之背面進行研磨,將晶圓固定帶貼合於研磨後之半導體晶圓之背面,且利用環狀框支持固定的步驟;(b)自上述遮罩一體型表面保護帶將上述基材膜與上述黏著劑層一體地剝離(即,自遮罩一體型表面保護帶將表面保護帶剝離)而使遮罩材料層露出於表面之後,藉由雷射將該遮罩材料層中與半導體晶圓之切割道相當之部分切斷,使半導體晶圓之切割道開口的步驟;(c)藉由SF6電漿以上述切割道將半導體晶圓分割而單片化為半導體晶片之電漿切割步驟;及(d)藉由O2電漿去除上述遮罩材料層之灰化步驟。
應用本發明之遮罩一體型表面保護帶之上述半導體晶片之製造方法,較佳為於上述步驟(d)之後包括下述步驟(e)。又,於包括下述步驟(e)之情形時,較佳為於該步驟(e)之後進而包括下述步驟(f)。
(e)自晶圓固定帶拾取半導體晶片之步驟;(f)將所拾取之半導體晶片轉移至黏晶步驟之步驟。
本發明之遮罩一體型表面保護帶如上所述具有基材膜、設置
於該基材膜上之黏著劑層及設置於該黏著劑層上之遮罩材料層。於本說明書中,有時將由基材膜及設置於該基材膜上之黏著劑層構成之積層體稱為「表面保護帶」。即,本發明之遮罩一體型表面保護帶係於表面保護帶之黏著劑層上進而設置有遮罩材料層之積層結構之帶。
本發明之遮罩一體型表面保護帶較佳為至少黏著劑層為放射線硬化型(即,具有藉由放射線照射而硬化之特性),更佳為僅黏著劑層為放射線硬化型。又,遮罩材料層較佳為感壓型(非放射線硬化型)。
於黏著劑層為放射線硬化型之情形時,較佳於上述步驟(b)中自上述遮罩一體型表面保護帶將上述基材膜與上述黏著劑層一體地剝離而使遮罩材料層露出於表面之前,包括照射放射線以使黏著劑層硬化之步驟。藉由使黏著劑層硬化而使遮罩材料層與黏著劑層之層間剝離性提高,從而自遮罩一體型表面保護帶容易地剝離表面保護帶。
以下,參照圖式對使用有本發明之遮罩一體型表面保護帶之半導體晶片之製造方法(以下,簡稱為「應用本發明之製造方法」)進行說明,但除本發明中規定之事項之外,本發明並不限定於下述實施形態。又,各圖式所示之形態係用以容易地理解本發明之示意圖,關於各構件之尺寸、厚度或相對大小關係,存在為方便說明而改變大小之情形,並非直接顯示實際之關係。又,除本發明中規定之事項之外,並不限定於該等圖式所示之外形、形狀。
應用本發明之製造方法之較佳之實施形態可分類為以下所示之第1及第2實施形態。
再者,下述實施形態中使用之裝置及材料等只要未特別說明,則可使
用一直以來用於半導體晶圓之加工之通常之裝置及材料等,且其使用條件亦可於通常之使用方法之範圍內根據目的而適當地設定、優化。又,關於各實施形態中共通之材質、結構、方法、效果等則省略重複記載。
<第1實施形態[圖1~圖5]>
參照圖1~圖5,對應用本發明之製造方法之第1實施形態進行說明。
半導體晶圓1於其表面S具有形成有半導體元件之電路等之圖案面2(參照圖1(a))。於該圖案面2,貼合於基材膜3aa上設置有黏著劑層3ab之表面保護帶3a之黏著劑層3ab上進而設置有遮罩材料層3b的本發明之遮罩一體型表面保護帶3(參照圖1(b)),獲得由本發明之遮罩一體型表面保護帶3被覆圖案面2之半導體晶圓1(參照圖1(c))。
其次,利用晶圓研磨裝置M1對半導體晶圓1之背面B進行研磨,使半導體晶圓1之厚度減薄(參照圖2(a))。於該研磨後之背面B貼合晶圓固定帶4(參照圖2(b)),且支持固定於環狀框F(參照圖2(c))。
自半導體晶圓1剝離遮罩一體型表面保護帶3之表面保護帶3a,並且其遮罩材料層3b保留於半導體晶圓1(參照圖3(a)),使遮罩材料層3b露出(參照圖3(b))。繼而,自表面S側對在圖案面2以格子狀等適當形成之多個切割道(未圖示)照射CO2雷射L,將遮罩材料層3b之與切割道相當之部分去除,使半導體晶圓之切割道開口(參照圖3(c))。
其次,自表面S側利用SF6氣體之電漿P1進行處理而將於切割道部分已成為露出之半導體晶圓1進行蝕刻(參照圖4(a)),將其分割而單片化為各個晶片7(參照圖4(b))。其次藉由O2氣體之電漿P2而進行灰化(參照圖4(c)),去除殘留於表面S之遮罩材料層3b(參照圖5(a))。
繼而,最後將單片化之晶片7藉由銷M2頂出且藉由吸嘴M3吸附而拾取(參照圖5(b))。
此處,使用有SF6氣體之半導體晶圓之Si之蝕刻製程亦稱為BOSCH製程,其係使露出之Si與將SF6電漿化所生成之F原子反應而作為四氟化矽(SiF4)去除者,亦稱為反應式離子蝕刻(RIE)。另一方面,利用O2電漿進行之去除於半導體製造製程中於作為電漿清洗機亦使用之方法中亦被稱為灰化(ashing),其係去除有機物之方法之一。其係為了清洗殘留於半導體器件表面之有機物殘渣而進行。
其次,對上述方法中使用之材料進行說明。再者,下述說明之材料係能夠應用於本發明之所有遮罩一體型表面保護帶之材料,且並非限定於將遮罩一體型表面保護帶用於上述方法之情形所應用之材料。
半導體晶圓1係於單面具有形成有半導體元件之電路等之圖案面2之矽晶圓等,圖案面2係形成有半導體元件之電路等之面,於俯視時具有切割道。
本發明之遮罩一體型表面保護帶3具有於基材膜3aa上設置有黏著劑層3ab、進而於黏著劑層3ab上設置有遮罩材料層之構成,具有保護形成於圖案面2之半導體元件之功能。即,於後續步驟之晶圓薄膜化步驟(背面研磨步驟)中以圖案面2支持半導體晶圓1而對晶圓之背面進行研磨,故遮罩一體型表面保護帶3必須承受該研磨時之負荷。因此,與單純之阻劑膜等不同,遮罩一體型表面保護帶3之厚度為僅被覆形成於圖案面之元件的厚度,其按壓阻力低,又,以不引起研磨時之灰塵或研磨水等滲入之方式將元件儘可能地密接之密接性高。
本發明之遮罩一體型表面保護帶3中之基材膜3aa係由塑膠或橡膠等構成,作為其材質可舉出例如使聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚1-丁烯、聚-4-甲基-1-戊烯、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、離子聚合物等α-烯烴之均聚物或共聚物,或該等之混合物、聚對酞酸乙二酯、聚萘二甲酸乙二酯(polyethylene naphthalate)、聚苯硫醚、聚醚醯亞胺、聚醯亞胺、聚碳酸酯、聚甲基丙烯酸甲酯、聚胺酯(polyurethane)、苯乙烯-乙烯-丁烯或戊烯系共聚物等單獨成分或2種以上混合而成者,進而於該等中摻合有除該等以外之樹脂或填充材、添加劑等而成之樹脂組合物,可根據要求特性而任意選擇。
基材膜3aa較佳具有由聚烯烴樹脂構成之層(亦稱為聚烯烴系樹脂層)。於該情形時,基材膜3aa可為由聚烯烴樹脂層構成之單層,亦可為由聚烯烴樹脂層與其他樹脂層構成之2層或其以上之多層結構。又,低密度聚乙烯與乙烯-乙酸乙烯酯共聚物之積層體,或聚丙烯與聚對酞酸乙二酯之積層體、聚對酞酸乙二酯、聚萘二甲酸乙二酯係較佳之材質之一。
該等基材膜3aa可使用一般的擠壓法製造。於將各種樹脂積層而獲得基材膜3aa之情形時,利用共擠壓法、層壓法等製造。此時,如於通常之層壓膜之製法中一般執行般,亦可於樹脂與樹脂之間設置接著層。關於此種基材膜3aa之厚度,根據強伸度特性、放射線透過性之觀點,較佳為20~200μm。
黏著劑層3ab與遮罩材料層3b一併承擔吸收形成於圖案面之元件之凹凸以提高與圖案面之密接性而保護圖案面之作用。為使遮罩一體型表面保護帶耐受晶圓薄膜化步驟之負荷,黏著劑層3ab較佳為於晶圓薄
膜化步驟中與遮罩材料層3b或基材膜3aa之密接性高。另一方面,於晶圓薄膜化步驟後,黏著劑層3ab為與基材膜3aa成為一體而自遮罩材料層3b剝離,較佳為與遮罩材料層之密接性低(較佳為剝離性高)。為以更高之標準實現該特性,較佳為於黏著劑層3ab中採用放射線硬化型之黏著劑。藉由使黏著劑層3ab為放射線硬化型黏著劑層,而利用放射線照射使構成黏著劑層之樹脂三維網狀化,從而使黏著力降低,故藉由於晶圓薄膜化步驟後照射紫外線而使與遮罩材料層之牢固之密接性解除,從而能夠將黏著劑層自遮罩材料層簡單地剝離(該具體之實施形態將於以下敍述)。
於本說明書中,所謂「放射線」係用於包含如紫外線之光線或如電子束之游離輻射之兩者之含義。本發明中使用之放射線較佳為紫外線。
於本發明之遮罩一體型表面保護帶中,黏著劑層3ab含有(甲基)丙烯酸系共聚物。此處,所謂黏著劑層3ab含有(甲基)丙烯酸系共聚物,係指包含(甲基)丙烯酸系共聚物以與下述硬化劑反應之狀態而存在之形態。
於本說明書中,(甲基)丙烯酸系共聚物可舉出例如具有(甲基)丙烯酸酯作為構成成分之共聚物,或該等共聚物之混合物等。該等聚合物之重量平均分子量通常為30萬~100萬左右。上述(甲基)丙烯酸系共聚物之所有單體成分中,(甲基)丙烯酸酯成分之比例較佳為70莫耳%以上,更佳為80莫耳%以上,進而佳為90莫耳%以上。又,(甲基)丙烯酸系共聚物之所有單體成分中,於(甲基)丙烯酸酯成分之比例並非100莫耳%之情形時,剩餘部分之單體成分較佳為以將(甲基)丙烯醯基作為聚合性基聚合成之形態存在之單體成分(來自(甲基)丙烯酸之構成成分等)。又,(甲基)丙烯酸系共聚物之所有單體成分中,具有與下述硬化劑反應之官能基(例如羥基)之(甲基)丙烯
酸酯成分之比例較佳為1莫耳%以上,更佳為2莫耳%以上,進而佳為5莫耳%以上,再佳為10莫耳%以上。又,該(甲基)丙烯酸酯成分之比例較佳為35莫耳%以下,更佳為25莫耳%以下。
上述(甲基)丙烯酸酯成分較佳為(甲基)丙烯酸烷基酯(亦稱為烷基(甲基)丙烯酸酯)。構成該(甲基)丙烯酸烷基酯之烷基之碳數較佳為1~20,更佳為1~15,進而佳為1~12。
黏著劑層3ab中之(甲基)丙烯酸系共聚物之含量(換算為與硬化劑反應之前之狀態之含量)較佳為80質量%以上,更佳為90質量%以上,進而佳為95~99.9質量%。
於黏著劑層3ab係由放射線硬化型黏著劑而構成之情形時,可較佳地應用含有丙烯酸系黏著劑與輻射聚合性化合物而成之黏著劑。
丙烯酸系黏著劑係(甲基)丙烯酸系共聚物,或(甲基)丙烯酸系共聚物與硬化劑之混合物。
硬化劑係為了與(甲基)丙烯酸系共聚物所具有之官能基反應以調整黏著力及凝集力而使用者。例如可舉出:1,3-雙(N,N-二環氧丙基胺甲基)環己烷、1,3-雙(N,N-二環氧丙基胺甲基)甲苯、1,3-雙(N,N-二環氧丙基胺甲基)苯、N,N,N',N'-四環氧丙基間茬二胺、乙二醇二環氧丙基醚、對苯二甲酸二環氧丙基酯丙烯酸酯等在分子中具有2個以上環氧基之環氧化合物(以下,亦稱為「環氧系硬化劑」);2,4-二異氰酸甲苯酯、2,6-二異氰酸甲苯酯、1,3-伸茬基二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4'-二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯及該等之加成物型等在分子中具有2個以上異氰酸酯基之異氰酸酯化合物
(以下,亦稱為「異氰酸酯系硬化劑」);四羥甲基-三-β-氮丙啶基(aziridinyl)丙酸酯、三羥甲基-三-β-氮丙啶基丙酸酯、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、三羥甲基丙烷-三-β-(2-甲基氮丙啶基)丙酸酯、三-2,4,6-(1-氮丙啶基)-1,3,5-三、三[1-(2-甲基)-氮丙啶基]氧化膦、六[1-(2-甲基)-氮丙啶基]三膦三等在分子中具有2個以上氮丙啶基之氮丙啶化合物(氮丙啶系硬化劑)等。硬化劑之添加量只要根據所需之黏著力而調整即可,相對於(甲基)丙烯酸系共聚物100質量份,適當為0.1~5.0質量份。於本發明之遮罩一體型表面保護帶之黏著劑層中,硬化劑處於已與(甲基)丙烯酸系共聚物反應之狀態。
作為上述輻射聚合性化合物,可廣泛地使用能夠藉由放射線之照射而三維網狀化、且於分子內具有至少2個以上光聚合性碳-碳雙鍵之低分子量化合物。具體而言,能夠廣泛地應用三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、新戊四醇三丙烯酸酯、新戊四醇四丙烯酸酯、二新戊四醇單羥基五丙烯酸酯、二新戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯,或寡酯丙烯酸酯等丙烯酸酯系化合物。
又,除上述丙烯酸酯系化合物之外,亦可使用丙烯酸胺酯(urethane acrylate)系低聚物。丙烯酸胺酯系低聚物係使具有羥基之丙烯酸酯或甲基丙烯酸酯(例如丙烯酸-2-羥基乙酯、甲基丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、甲基丙烯酸2-羥基丙酯、聚乙二醇丙烯酸酯、聚乙二醇甲基丙烯酸酯等)和使聚酯型或聚醚型等多元醇化合物與多異氰酸酯化合物(例如2,4-二異氰酸甲苯酯、2,6-二異氰酸甲苯酯、1,3-伸茬基二
異氰酸酯、1,4-伸茬基二異氰酸酯、二苯基甲烷4,4-二異氰酸酯等)反應所得之末端異氰酸酯基胺酯預聚物反應而獲得。
作為放射線硬化型黏著劑中之丙烯酸系黏著劑與輻射聚合性化合物之摻合比,較理想為相對於丙烯酸系黏著劑100質量份使輻射聚合性化合物於50~200質量份、較佳為50~150質量份之範圍進行摻合。當為該摻合比之範圍之情形時,於放射線照射後能夠使黏著劑層之黏著力大幅降低。
又,作為用於黏著劑層3ab之放射線硬化型黏著劑,較佳亦使用將上述(甲基)丙烯酸系共聚物本身設為輻射聚合性之輻射聚合性(甲基)丙烯酸系共聚物。於該情形時,放射線硬化型黏著劑亦可含有硬化劑。
輻射聚合性(甲基)丙烯酸系共聚物係於共聚物之分子中具有能夠利用放射線、尤其利用紫外線照射而進行聚合反應之反應性之基之共聚物。作為此種反應性之基,較佳為乙烯性不飽和基,即具有碳-碳雙鍵(乙烯性不飽和鍵)之基。作為該基之例,可舉出乙烯基、烯丙基、苯乙烯基、(甲基)丙烯醯氧基、(甲基)丙烯醯胺基等。(甲基)丙烯酸系共聚物較佳於支鏈具有乙烯性不飽和鍵。(甲基)丙烯酸系共聚物之乙烯性不飽和鍵含量較佳為0.05~10meq/g,更佳為0.5~5meq/g。
上述反應性基向共聚物中之導入可藉由例如使具有羥基之共聚物和具有與羥基反應之基(例如異氰酸酯基)且具有上述反應性基之化合物[(代表性而言為異氰酸2-(甲基)丙烯醯氧基乙酯)反應而進行。
在構成於支鏈具有乙烯性不飽和鍵之(甲基)丙烯酸系共聚物(其構成本發明之遮罩一體型表面保護帶之黏著劑層3ab)之單體成分中,較佳含有醇
部之碳數為8~12之(甲基)丙烯酸烷基酯成分。在構成於支鏈具有乙烯性不飽和鍵之(甲基)丙烯酸系共聚物之單體成分中,醇部之碳數為8~12之(甲基)丙烯酸烷基酯成分之比例較佳為45~85莫耳%,更佳為50~80莫耳%。
此處,所謂(甲基)丙烯酸烷基酯成分之「醇部」係指來自形成酯鍵之醇之結構(相對於此,(甲基)丙烯酸烷基酯成分中,將來自(甲基)丙烯酸之結構稱為酸部)。例如,於(甲基)丙烯酸烷基酯成分為丙烯酸-2-乙基己酯成分之情形時,醇部係來自2-乙基己醇之結構,酸部係來自丙烯酸之結構,且醇部之碳數成為8。又,於(甲基)丙烯酸烷基酯成分為丙烯酸月桂酯成分之情形時,醇部係來自1-十二烷醇之結構,酸部係來自丙烯酸之結構,醇部之碳數成為12。
又,於藉由放射線使黏著劑層3ab聚合硬化之情形時,可使用光聚合起始劑,例如安息香異丙醚、安息香異丁醚、二苯甲酮、米其勒酮、氯9-氧硫、二苯乙二酮甲基縮酮、α-羥基環己基苯基酮、2-羥基甲苯基丙烷等。藉由將該等中之至少1種添加至黏著劑層而可使聚合反應效率良好地進行。
上述黏著劑層3ab亦可進而含有光敏劑、習知公知之黏著賦予劑、軟化劑、抗氧化劑等。
作為上述黏著劑層3ab,亦較佳為採用日本專利特開2014--192204號公報之段落號0036~0055中記載之形態。
關於黏著劑層3ab之厚度,就進一步提高形成於圖案面2之元件等之保護能力、又進一步提高對圖案面之密接性之觀點而言,較佳為5~100μm。再者,雖亦取決於器件之種類,但圖案表面之凹凸大致為數μm
~15μm左右,故黏著劑層3ab之厚度更佳為5~30μm。
遮罩材料層3b中含有(甲基)丙烯酸系共聚物。此處,所謂遮罩材料層3b中含有(甲基)丙烯酸系共聚物係指包含(甲基)丙烯酸系共聚物以與硬化劑反應之狀態而存在之形態。
對於遮罩材料層3b,可較佳地使用作為非放射線硬化型之所謂感壓型之黏著劑。作為該感壓型之黏著劑,可較佳地使用上述之(甲基)丙烯酸系共聚物與硬化劑之混合物。
又,遮罩材料層3b亦較佳為含有氟系脫膜材料。作為氟系脫膜材料,可舉出例如MEGAFACE(商品名,DIC股份有限公司製造)。
關於遮罩材料層3b之厚度,就電漿灰化中之去除速度之觀點而言,較佳為5~100μm,更佳為5~30μm。
本發明之遮罩一體型表面保護帶較佳為,用於形成黏著劑層3ab之硬化劑、與用於形成遮罩材料層3b之硬化劑(可應用上述黏著劑層中之硬化劑之記載)之種類不同。藉由使用不同之硬化劑而可控制各個層之交聯結構。若成為相同之交聯結構,則會因時間之經過而使遮罩材料層與黏著劑層之層間交聯,從而難以使遮罩材料保留於晶圓上。
其中,較佳使用異氰酸酯系硬化劑作為用於形成黏著劑層3ab之硬化劑,且使用環氧系硬化劑作為用於遮罩材料層3b之硬化劑。藉由形成該構成而容易僅使遮罩材料層保留於晶圓上。
於本發明之遮罩一體型表面保護帶中,形成黏著劑層3ab之(甲基)丙烯酸系共聚物與形成遮罩材料層3b之(甲基)丙烯酸系共聚物之玻璃轉移溫度(Tg)的差較佳為10℃以上,更佳為10~50℃。
若玻璃轉移溫度的差成為10℃以上,則層間接著力降低,故遮罩材料層與黏著劑層之間可容易地剝離。又,藉由使玻璃轉移溫度的差為50℃以下而容易將遮罩材料層與黏著劑層之間的層間密接力維持為適當之強度,從而可更加減少灰塵侵入或晶圓裂紋產生之危險。
此處,上述之形成黏著劑層3ab之(甲基)丙烯酸系共聚物之Tg及形成遮罩材料層3b之(甲基)丙烯酸系共聚物之Tg均係指與硬化劑反應之前之狀態下的(甲基)丙烯酸系共聚物之Tg。
黏著劑層3ab之玻璃轉移溫度較佳為低於遮罩材料層3b之玻璃轉移溫度。
Tg可使用示差掃描型熱量分析裝置(島津製作所製造,DSC-60)而測定。更詳細而言,以升溫速度5℃/分鐘升溫至-100℃~100℃,將JIS K 7121「塑膠之轉移溫度測定方法」之外推玻璃轉移開始溫度設為Tg。
本發明之遮罩一體型表面保護帶係遮罩材料層3b與半導體晶圓之圖案面2之間的密接力較佳為0.2N/25mm以上,更佳為1.0~20N/25mm。又,遮罩材料層3b與黏著劑層3ab之間的密接力亦較佳為0.2N/25mm以上,更佳為1.0~5.0N/25mm。藉由具有該密接力而可實現耐受晶圓薄膜化步驟中之負荷之密接性。
於本說明書中「密接力」(單位:N/25mm)係藉由以下方法而求出,即,使用Tensilon測試機(島津製作所股份有限公司製造AG-10kNI(商品名)),利用切割器將遮罩一體型表面保護帶切出5mm寬度之切口之後,將遮罩材料層以剝離速度300mm/min朝180°方向拉伸而剝下,測量此時之應力(剝離強度)。
本發明之遮罩一體型表面保護帶中,在對黏著劑層3ab使用放射線硬化型黏著劑,且於晶圓薄膜化步驟後藉由紫外線照射而使黏著劑層3ab硬化之情形時,於利用紫外線照射而硬化之前,遮罩材料層3b與半導體晶圓之圖案面2之間的密接力及遮罩材料層3b與黏著劑層3ab之間的密接力較佳為0.2N/25mm以上。又,於利用紫外線照射而使黏著劑層3ab硬化之後,遮罩材料層3b與黏著劑層3ab之間的密接力較佳低於遮罩材料層3b與半導體晶圓之圖案面2之間的密接力。
此處,於上述密接力之測定中,紫外線照射條件係指將紫外線以累計照射量成為500mJ/cm2之方式對遮罩一體型表面保護帶整體自該帶之基材膜側進行照射。於紫外線照射中使用高壓水銀燈。
晶圓固定帶4保持半導體晶圓1,需要即便置於電漿切割步驟中亦能夠耐受之耐電漿性。又,於拾取步驟中要求良好之拾取性或視情形亦要求延伸性等。對於如此之晶圓固定帶4,可使用與上述表面保護帶3a相同之帶。又,可使用一般被稱為切割帶之於習知之電漿切割方式中利用之公知之切割帶。又,為了容易地轉移至拾取後之黏晶步驟,亦可使用於黏著劑層與基材膜之間積層有黏晶用接著劑之切晶-黏晶帶。
於切斷遮罩材料層3b之雷射照射中,可使用照射紫外線或紅外線之雷射光之雷射照射裝置。該雷射光照射裝置係配設有能夠沿半導體晶圓1之切割道自由地移動之雷射照射部,可照射被適當控制以用於去除遮罩材料層3b之輸出之雷射。其中,CO2雷射能夠獲得數W~數十W之大輸出,可適用於本發明。
於進行電漿切割及電漿灰化時可使用電漿蝕刻裝置。電漿蝕
刻裝置係能夠對半導體晶圓1進行乾式蝕刻之裝置,且係於真空腔室內建立有密閉處理空間,將半導體晶圓1載置於高頻側電極,且自與該高頻側電極對向設置之氣體供給電極側供給電漿產生用氣體者。若對高頻側電極施加高頻電壓,則於氣體供給電極與高頻側電極之間產生電漿,故利用該電漿。於發熱之高頻電極內使冷媒循環,防止因電漿之熱所導致之半導體晶圓1之升溫。
根據上述半導體晶片之製造方法(半導體晶圓之處理方法),藉由使保護圖案面之表面保護帶具有電漿切割中之遮蔽功能,而無需用以設置習知之電漿切割製程中所使用之阻劑之光刻步驟等。尤其由於使用表面保護帶,故於遮罩之形成中無需印刷或轉印等要求高度之位置對準之技術,便可將本發明之遮罩一體型表面保護帶簡單地貼合於半導體晶圓表面,可藉由雷射裝置而簡單地形成遮罩。
又,由於可利用O2電漿而去除遮罩材料層3b,故可利用與進行電漿切割之裝置相同之裝置而去除遮罩部分。此外,由於自圖案面2側(表面S側)進行電漿切割,故於拾取作業前無需使晶片之上下反轉。根據該等理由而可使設備簡化,從而可大幅抑制製程成本。
<第2實施形態[圖6]>
本實施形態中,與第1實施形態之不同點在於,於第1實施形態之剝離表面保護帶3a之步驟之前,包括對遮罩一體型表面保護帶3照射紫外線等放射線而使黏著劑層硬化之步驟。其他步驟與第1實施形態相同。
即,於半導體晶圓1之表面S側貼合遮罩一體型表面保護帶3,於半導體晶圓1之研磨後之背面B側貼合晶圓固定帶4,且支持固定於
環狀框F(參照圖2(c)、圖6(a))之後,自表面S側向遮罩一體型表面保護帶3照射紫外線UV(參照圖6(b))。繼而,使遮罩一體型表面保護帶3之黏著劑層3ab硬化之後,去除表面保護帶3a(參照圖6(c))而使遮罩材料層3b露出。繼而轉移至藉由雷射L而去除與切割道相當之部分之遮罩材料層3b之步驟。
本實施形態中使用之遮罩一體型表面保護帶係第1實施形態所示之遮罩一體型表面保護帶3中將能夠利用紫外線等放射線而硬化之材質用於黏著劑層3ab者。
藉由利用紫外線等使黏著劑層3ab硬化而使表面保護帶3a與遮罩材料層3b之剝離變得容易。
上述各實施形態為本發明之一例,本發明並不限定於此種形態,於不違反本發明之宗旨之限度內,能夠進行各製程中之公知之製程之附加或刪除、變更等。
[實施例]
以下,根據實施例更詳細地說明本發明,但本發明並不限定於此。
[實施例1]遮罩一體型表面保護帶之製作、半導體晶片之製造
<遮罩一體型表面保護帶之製作>
將甲基丙烯酸1.0mol%、丙烯酸-2-乙基己酯78mol%、丙烯酸-2-羥基乙酯21mol%混合,且於溶液中聚合,藉此獲得重量平均分子量為70萬之(甲基)丙烯酸系共聚物溶液。
對所獲得之共聚物加成異氰酸2-甲基丙烯醯氧基乙酯(商品名:Karenz MOI,昭和電工股份有限公司製造)而獲得以下物性之(甲基)丙烯酸系共聚物。(重量平均分子量:70萬,雙鍵量:0.90meq/g,羥值:33.5mgKOH/g,酸值:5.5mgKOH/g,Tg:-68℃)
對該含有乙烯性不飽和基之(甲基)丙烯酸系共聚物100質量份摻合作為硬化劑之Coronate L(日本聚氨酯工業股份有限公司製造,異氰酸酯系硬化劑)2.0質量份、作為光聚合起始劑之Irgacure 184(BASF公司製造)5.0質量份,獲得黏著劑組合物A。
將丙烯酸20mol%、丙烯酸丁酯70mol%及丙烯酸甲酯10mol%混合,且於溶液中聚合,藉此合成丙烯酸系共聚物(重量平均分子量:40萬,羥值:0mgKOH/g,酸值:48.8mgKOH/g,Tg:-23℃)。
於丙烯酸系共聚物之溶液,相對於該共聚物100質量份,摻合作為硬化劑之TETRAD-X(三菱氣體化學股份有限公司製造,環氧系硬化劑)2.0質量份,獲得黏著劑組合物B。
將上述黏著劑組合物A塗敷於剝離襯墊上,將所形成之黏著劑層貼合於厚度100μm之LDPE(低密度聚乙烯)膜,獲得厚度130μm之紫外線硬化型表面保護帶3a。
進而,將黏著劑組合物B以乾燥後之厚度成為10μm厚之方式塗敷於剝離襯墊上,且貼合於該紫外線硬化型表面保護帶3a之剝離襯墊剝掉而露出之黏著劑層表面,藉此獲得總厚為140μm之紫外線硬化型之遮罩材料一體型表面保護帶3。
<半導體晶片之製造>
使用貼合機DR8500III(商品名:日東精機(股份)公司製造),將上述所獲得之紫外線硬化型之遮罩一體型表面保護帶貼合於附切割線(切割道)之矽晶圓(直徑8吋)表面。
然後,使用DGP8760(商品名:迪思科(股份)公司製造),將與貼合有上述遮罩一體型表面保護帶之面相反之面(晶圓之背面)研磨至晶圓之厚度成為50μm。使用RAD-2700F(商品名:LINTEC(股份)公司製造),將研磨後之晶圓自晶圓背面側安裝至切割帶上,且以環狀框支持固定。進而,使用高壓水銀燈自紫外線硬化型之遮罩一體型帶側照射500mJ/cm2之紫外線,藉此使遮罩材料層3b與表面保護帶3a之間的密接力降低,僅將表面保護帶3a剝離,且於晶圓上僅保留遮罩材料層3b。此處可知,由於可使遮罩材料層3b保留而僅剝離表面保護帶3a,故於紫外線照射後,遮罩材料層與黏著劑層之密接力低於遮罩材料層與晶圓間之密接力。
其次,利用CO2雷射去除切割線上之遮罩材料,使切割線開口。
然後,使用SF6氣體作為電漿產生用氣體,對矽晶圓以15μm/分鐘之蝕刻速度自遮罩材料層側進行5分鐘電漿照射。藉由該電漿切割而將晶圓切斷從而分割為各個晶片。其次使用O2氣體作為電漿產生用氣體,以1.5μm/分鐘之蝕刻速度進行10分鐘灰化,去除遮罩材料。然後,自切割帶側照射紫外線(照射量200mJ/cm2),使切割帶之黏著力降低,拾取晶片。
於上述實施例1中,將寬度25mm之遮罩一體型表面保護帶貼合於矽晶圓。然後,以剝離角度180°、剝離速度300mm/min測定密接力,結果確認到於1.6N/25mm時遮罩材料層與晶圓表面之間的剝離。根據該結果而確認,遮罩材料層與黏著劑層之間的密接力亦為1.6N/25mm
以上。
[實施例2]遮罩一體型表面保護帶之製作、半導體晶片之製造
<遮罩一體型表面保護帶之製作>
對SG-600TEA(商品名,長瀨化成公司製造,(甲基)丙烯酸系共聚物,重量平均分子量:120萬,羥值:20mgKOH/g,酸值:0mgKOH/g,Tg:-32℃)100質量份,摻合作為硬化劑之Coronate L(日本聚氨酯工業股份有限公司製造)2.0質量份,獲得黏著劑組合物C。
將所獲得之黏著劑組合物C塗敷於剝離襯墊上,且將所形成之黏著劑層貼合於厚度100μm之LDPE(低密度聚乙烯)膜,獲得厚度130μm之感壓型之表面保護帶3a。
進而,將黏著劑組合物B以乾燥後之厚度成為10μm厚之方式塗敷於剝離襯墊上,且貼合於上述感壓型之表面保護帶之剝離襯墊剝掉後之黏著劑層上,藉此獲得總厚為140μm之感壓型之遮罩一體型表面保護帶3。
<半導體晶片之製造>
使用貼合機DR8500III(商品名:日東精機(股份)公司製造),將上述所獲得之感壓型之遮罩一體型表面保護帶貼合於附切割線之矽晶圓(直徑8吋)表面。
然後,使用DGP8760(商品名:迪思科(股份)公司製造),將與貼合有上述遮罩一體型表面保護帶之面相反之面(晶圓之背面)研磨至晶圓之厚度成為50μm。使用RAD-2700F(商品名:LINTEC(股份)公司製造)將研磨後之上述附遮罩材料之晶圓自晶圓背面側安裝於切割帶上,且以環
狀框支持固定。進而僅將表面保護帶3a剝離,於晶圓上僅保留遮罩材料層3b。
然後,除不進行紫外線照射之外,與實施例1同樣地執行步驟,即,以與實施例1相同之方式使切割線開口,且進行電漿切割、灰化,拾取晶片。
[實施例3]遮罩一體型表面保護帶之製作、半導體晶片之製造
<遮罩一體型表面保護帶之製作>
將甲基丙烯酸1.0mol%、丙烯酸月桂酯53mol%、丙烯酸-2-羥基乙酯26mol%、丙烯酸-2-乙基己酯20mol%混合,且於溶液中聚合,藉此獲得重量平均分子量為30萬之(甲基)丙烯酸系共聚物溶液。
對所獲得之共聚物加成異氰酸2-甲基丙烯醯氧基乙酯(商品名:Karenz MOI,昭和電工股份有限公司製造)而獲得以下物性之(甲基)丙烯酸系共聚物。(重量平均分子量:30萬,雙鍵量0.59meq/g,羥值55.6mgKOH/g,酸值5.5mgKOH/g,Tg:-20℃)
對該含有乙烯性不飽和基之(甲基)丙烯酸系共聚物100質量份摻合作為硬化劑之Coronate L(日本聚氨酯工業股份有限公司製造)2.0質量份、作為光聚合起始劑之Irgacure 184(BASF公司製造)5.0質量份,獲得黏著劑組合物D。
將上述黏著劑組合物D塗敷於剝離襯墊上,且將所形成之黏著劑層貼合於厚度100μm之PET(聚對酞酸乙二酯)與LDPE(低密度聚乙烯)積層膜(層構成25μm:75μm)之LDPE層上,獲得厚度130μm
之紫外線硬化型表面保護帶3a。
進而,將上述實施例1中所製備之黏著劑組合物B以乾燥後之厚度成為10μm厚之方式塗敷於剝離襯墊上,且貼合於該紫外線硬化型表面保護帶之剝離襯墊剝掉而露出之黏著劑層表面,藉此獲得總厚為140μm之紫外線硬化型之遮罩一體型表面保護帶3。
<半導體晶片之製造>
使用貼合機DR8500III(商品名:日東精機(股份)公司製造),將上述所獲得之紫外線硬化型之遮罩一體型表面保護帶貼合於附切割線之矽晶圓(直徑8吋)表面。
然後,使用DGP8760(商品名:迪思科(股份)公司製造),將與貼合有上述遮罩一體型表面保護帶之面相反之面(晶圓之背面)研磨至晶圓之厚度成為50μm。使用RAD-2700F(商品名:LINTEC(股份)公司製造),將研磨後之晶圓自晶圓背面側安裝於切割帶上,且以環狀框支持固定。進而,使用高壓水銀燈自紫外線硬化型之遮罩一體型帶側照射500mJ/cm2之紫外線,藉此使遮罩材料層3b與表面保護帶3a之間的密接力降低,僅將表面保護帶3a剝離,且於晶圓上僅保留遮罩材料層3b。此處可知,由於可將遮罩材料層3b保留而僅剝離表面保護帶3a,故於紫外線照射後,遮罩材料層與黏著劑層之密接力低於遮罩材料層與晶圓間之密接力。
然後,以與實施例1相同之方式,使切割線開口,且進行電漿切割、灰化,於照射紫外線之後,拾取晶片。
於上述實施例3中,將寬度25mm之一體型帶貼合於矽晶圓。然後,以剝離角度180°、剝離速度300mm/min實施密接力之測定,結果確認到
於2N/25mm時遮罩材料層與晶圓表面之間的剝離。根據該結果而確認,遮罩材料層與黏著劑層之間的黏著力亦為2N/25mm以上。
[比較例1]藉由光刻製程實施之遮罩形成、表面保護帶之製作、半導體晶片之製造
<附遮罩之晶圓之製作>
使用雷射而製作晶片尺寸10mm×10mm、切割線寬度70μm之8吋附切割線之矽晶圓。將正型感光性材料塗佈於上述附切割線之矽晶圓上,形成厚度10μm之阻劑遮罩層。使用光罩僅對切割線上照射紫外線,使用鹼性之顯影液去除切割線上之阻劑,製作附遮罩之晶圓。
<感壓型表面保護帶之製作>
對KP-1909B(商品名,日本Carbide公司製造)100質量份摻合作為硬化劑之Coronate L(商品名,日本聚氨酯工業股份有限公司製造)1.0質量份,獲得黏著劑組合物。
將該黏著劑組合物以厚度成為30μm之方式塗佈於剝離襯墊上,且貼合於厚度100μm之LDPE(低密度聚乙烯)膜之電暈處理面,獲得厚度130μm之感壓型表面保護帶。
<半導體晶片之製造>
使用貼合機DR8500III(商品名:日東精機(股份)公司製造),將上述所製備之感壓型表面保護帶貼合於上述所製備之附遮罩之晶圓之遮罩上。
然後,使用DGP8760(商品名:迪思科(股份)公司製造),將上述附遮罩之矽晶圓之背面研磨至晶圓之厚度成為50μm。使用RAD-2700F(商品名:LINTEC(股份)公司製造)將研磨後之上述附遮罩材料之矽晶圓自
晶圓背面側安裝於切割帶上,且以環狀框支持固定。然後,將感壓型表面保護帶剝離。
然後,以與實施例1相同之方式藉由電漿切割而將晶圓分割為晶片,其次以與實施例1相同之方式藉由灰化而去除遮罩,進而,以與實施例1相同之方式拾取晶片。
[比較例2]藉由光刻製程實施之遮罩形成、表面保護帶之製作、半導體晶片之製造
<附遮罩之晶圓之製作>
以與比較例1相同之方式,藉由光刻製程而製作附遮罩之矽晶圓。
<紫外線硬化型表面保護帶之製作>
將甲基丙烯酸20mol%、丙烯酸-2-乙基己酯30mol%、丙烯酸-2-羥基乙酯10mol%、丙烯酸甲酯40mol%混合,且於溶液中聚合,藉此獲得重量平均分子量為60萬之(甲基)丙烯酸系共聚物之溶液。
於上述(甲基)丙烯酸系共聚物之溶液,相對於該(甲基)丙烯酸系共聚物100質量份,摻合作為紫外線反應性樹脂之6官能之丙烯酸胺酯低聚物(新中村化學工業股份有限公司製造)100質量份及3官能之丙烯酸胺酯低聚物(新中村化學工業股份有限公司製造)50質量份、作為硬化劑之Coronate L(日本聚氨酯工業股份有限公司製造)4.0質量份、作為光聚合起始劑之Irgacure 184(BASF公司製造)10質量份,獲得黏著劑組合物。
將所獲得之黏著劑組合物以黏著劑層之厚度成為30μm之方式塗敷於透明之剝離襯墊上,且將所形成之黏著劑層貼合於厚度100μm之LDPE(低密度聚乙烯)膜之電暈處理面,獲得厚度130μm之紫外線硬化型表面保
護帶。
<半導體晶片之製造>
使用貼合機DR8500III(商品名:日東精機(股份)公司製造),將上述所製備之紫外線硬化型表面保護帶貼合於上述所製備之附遮罩之晶圓之遮罩上。
然後,使用DGP8760(商品名:迪思科(股份)公司製造),將上述附遮罩之晶圓之背面研磨至晶圓之厚度成為50μm。使用RAD-2700F(商品名:LINTEC(股份)公司製造),將研磨後之上述附遮罩之晶圓自晶圓背面側安裝於切割帶上,且以環狀框支持固定。然後,自表面保護帶之側照射500mJ/cm2之紫外線之後,將紫外線硬化型表面保護帶剝離。
[試驗例1]表面保護帶之剝離性評價
根據下述評價基準而評價於上述各實施例及比較例之<半導體晶片之製造>中於剝離表面保護帶時需要之力(剝離性)。再者,表面保護帶之剝離係使用RAD-2700F(商品名:LINTEC(股份)公司製造)進行。
-表面保護帶之剝離性之評價基準-
◎:能以較弱之力僅簡單地剝離表面保護帶。
○:剝離時需要稍強之力,但能僅剝離表面保護帶。
×:無法剝離。或者,連同遮罩材料層一起剝離。
[試驗例2]基於O2電漿灰化之遮罩材料層之去除性評價
於上述各實施例及比較例之<半導體晶片之製造>中,使用雷射顯微鏡檢查O2電漿灰化(以1.5μm/分鐘之蝕刻速度進行10分鐘灰化)後有無遮罩材料之殘留。
-遮罩材料層之去除性之評價基準-
○:無遮罩材料層之殘留。
×:有遮罩材料層之殘留。
[試驗例3]切割線上之糊劑殘留之評價
於上述各實施例及比較例之<半導體晶片之製造>中,於剝離表面保護帶之後,利用顯微鏡觀察晶圓表面,檢查切割線上有無糊劑殘留。
-切割線上之糊劑殘留之評價基準-
○:無糊劑殘留。
×:有糊劑殘留。
將試驗例1~3之結果示於下表。
根據上述各試驗例之結果可知,於加工半導體晶圓而製造半導體晶片時,藉由使用本發明之遮罩一體型表面保護帶,僅藉由將遮罩一體型表面保護帶貼附於半導體晶圓之圖案面且自該帶剝離表面保護帶,便可不產生糊劑殘留而簡單地形成遮罩,進而,該遮罩可藉由O2電漿而更確實地去除,從而可高度地抑制不良晶片之產生。
已對本發明與其實施態樣一併進行了說明,但只要未特別指定,則無論於說明之任一細節,均無想要限定本發明,應在不違反附加之
申請專利範圍所示之發明之精神與範圍下,作廣泛地解釋。
本案係主張基於2015年11月9日於日本提出專利申請之特願2015-219737之優先權者,該特願在此作為參照且引入其內容作為本說明書中記載之一部分。
Claims (15)
- 一種遮罩一體型表面保護帶,用於包括下述步驟(a)~(d)之半導體晶片之製造,該遮罩一體型表面保護帶具有基材膜、設置於該基材膜上之黏著劑層及設置於該黏著劑層上之遮罩材料層,該遮罩材料層及該黏著劑層均含有(甲基)丙烯酸系共聚物:(a)在將遮罩一體型表面保護帶貼合於半導體晶圓之圖案面側之狀態下,對該半導體晶圓之背面進行研磨,將晶圓固定帶貼合於研磨後之半導體晶圓之背面,利用環狀框(ring frame)支持固定的步驟;(b)自該遮罩一體型表面保護帶將該基材膜與該黏著劑層一體地剝離而使遮罩材料層露出於表面之後,藉由雷射將該遮罩材料層中與半導體晶圓之切割道(street)相當之部分切斷,使半導體晶圓之切割道開口的步驟;(c)藉由SF6電漿以該切割道將半導體晶圓分割而單片化為半導體晶片之電漿切割步驟;及(d)藉由O2電漿去除該遮罩材料層之灰化步驟。
- 如申請專利範圍第1項之遮罩一體型表面保護帶,其中,該遮罩一體型表面保護帶之黏著劑層為放射線硬化型。
- 如申請專利範圍第2項之遮罩一體型表面保護帶,其中,於該步驟(b)中,自該遮罩一體型表面保護帶將該基材膜與該黏著劑層一體地剝離而使遮罩材料層露出於表面之前,包括照射紫外線以使該黏著劑層硬化之步驟;於利用該紫外線照射之硬化前,遮罩材料層與半導體晶圓之圖案面之間的密接力及遮罩材料層與黏著劑層之間的密接力均為0.2N/25mm以上,於利用該紫外線照射之硬化後,遮罩材料層與黏著劑層之間的密接力低於遮罩材料層與半導體晶圓之圖案面之間的密接力。
- 如申請專利範圍第2或3項之遮罩一體型表面保護帶,其中,構成該黏著劑層之(甲基)丙烯酸系共聚物於支鏈具有乙烯性不飽和鍵。
- 如申請專利範圍第4項之遮罩一體型表面保護帶,其中,在構成於該支鏈具有乙烯性不飽和鍵之(甲基)丙烯酸系共聚物之單體成分中,含有醇部之碳數為8~12之(甲基)丙烯酸烷基酯成分。
- 如申請專利範圍第1至3項中任一項之遮罩一體型表面保護帶,其中,該基材膜具有聚烯烴系樹脂層。
- 如申請專利範圍第1至3項中任一項之遮罩一體型表面保護帶,其中,形成該黏著劑層之(甲基)丙烯酸系共聚物之玻璃轉移溫度與形成該遮罩材料層之(甲基)丙烯酸系共聚物之玻璃轉移溫度的差為10℃以上。
- 如申請專利範圍第1至3項中任一項之遮罩一體型表面保護帶,其中,於該遮罩材料層及該黏著劑層使用有硬化劑,用於該遮罩材料層之硬化劑與用於該黏著劑層之硬化劑之種類不同。
- 如申請專利範圍第8項之遮罩一體型表面保護帶,其中,於該遮罩材料層使用環氧系硬化劑,於該黏著劑層使用異氰酸酯系硬化劑。
- 如申請專利範圍第1至3項中任一項之遮罩一體型表面保護帶,其中,該遮罩材料層含有氟系脫膜材料。
- 一種遮罩一體型表面保護帶,具有基材膜、設置於該基材膜上之黏著劑層及設置於該黏著劑層上之遮罩材料層,該遮罩材料層及該黏著劑層均含有(甲基)丙烯酸系共聚物及硬化劑,該黏著劑層含有之硬化劑與該遮罩材料層含有之硬化劑之種類不同。
- 如申請專利範圍第11項之遮罩一體型表面保護帶,其中,於該遮罩材料層使用環氧系硬化劑,於該黏著劑層使用異氰酸酯系硬化劑。
- 如申請專利範圍第11或12項之遮罩一體型表面保護帶,其中,該遮罩一體型表面保護帶之黏著劑層為放射線硬化型。
- 如申請專利範圍第11或12項之遮罩一體型表面保護帶,其中,該遮罩材料層含有氟系脫膜材料。
- 如申請專利範圍第11或12項之遮罩一體型表面保護帶,其中,該遮罩一體型表面保護帶係電漿切割用。
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CN107210207A (zh) * | 2015-11-09 | 2017-09-26 | 古河电气工业株式会社 | 半导体芯片的制造方法和用于该制造方法的掩模一体型表面保护带 |
US10818553B2 (en) * | 2018-03-26 | 2020-10-27 | Panasonic Intellectual Property Management Co., Ltd. | Method for cutting element chip by laser scribing |
JP7281873B2 (ja) | 2018-05-14 | 2023-05-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP7166718B2 (ja) * | 2018-10-17 | 2022-11-08 | 株式会社ディスコ | ウェーハの加工方法 |
TW202114873A (zh) * | 2019-06-03 | 2021-04-16 | 愛爾蘭商滿捷特科技公司 | 處理mems晶圓的方法 |
US11587834B1 (en) * | 2020-06-29 | 2023-02-21 | Plasma-Therm Llc | Protective coating for plasma dicing |
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ES2930455T3 (es) | 2022-12-13 |
PT3376528T (pt) | 2022-09-29 |
CN107431004A (zh) | 2017-12-01 |
CN107431004B (zh) | 2021-11-19 |
KR20180021672A (ko) | 2018-03-05 |
KR102042538B1 (ko) | 2019-11-08 |
WO2017082212A1 (ja) | 2017-05-18 |
EP3376528A4 (en) | 2019-07-10 |
TW201729276A (zh) | 2017-08-16 |
US20180226359A1 (en) | 2018-08-09 |
JP6845134B2 (ja) | 2021-03-17 |
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