TWI625366B - 經塗覆之電子總成 - Google Patents
經塗覆之電子總成 Download PDFInfo
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- TWI625366B TWI625366B TW103111309A TW103111309A TWI625366B TW I625366 B TWI625366 B TW I625366B TW 103111309 A TW103111309 A TW 103111309A TW 103111309 A TW103111309 A TW 103111309A TW I625366 B TWI625366 B TW I625366B
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- 229920000642 polymer Polymers 0.000 claims abstract description 123
- 150000001875 compounds Chemical class 0.000 claims abstract description 104
- 238000000576 coating method Methods 0.000 claims abstract description 84
- 239000011248 coating agent Substances 0.000 claims abstract description 78
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 39
- 239000001257 hydrogen Substances 0.000 claims abstract description 39
- 238000000151 deposition Methods 0.000 claims abstract description 38
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 25
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 10
- 239000010410 layer Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 34
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical compound CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 claims description 27
- 238000006116 polymerization reaction Methods 0.000 claims description 27
- 229930195733 hydrocarbon Natural products 0.000 claims description 12
- 150000002430 hydrocarbons Chemical class 0.000 claims description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 7
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 claims description 3
- PRJNEUBECVAVAG-UHFFFAOYSA-N 1,3-bis(ethenyl)benzene Chemical compound C=CC1=CC=CC(C=C)=C1 PRJNEUBECVAVAG-UHFFFAOYSA-N 0.000 claims description 3
- WEERVPDNCOGWJF-UHFFFAOYSA-N 1,4-bis(ethenyl)benzene Chemical compound C=CC1=CC=C(C=C)C=C1 WEERVPDNCOGWJF-UHFFFAOYSA-N 0.000 claims description 3
- NVZWEEGUWXZOKI-UHFFFAOYSA-N 1-ethenyl-2-methylbenzene Chemical compound CC1=CC=CC=C1C=C NVZWEEGUWXZOKI-UHFFFAOYSA-N 0.000 claims description 3
- JZHGRUMIRATHIU-UHFFFAOYSA-N 1-ethenyl-3-methylbenzene Chemical compound CC1=CC=CC(C=C)=C1 JZHGRUMIRATHIU-UHFFFAOYSA-N 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- XLVQOTWMBDNMBV-UHFFFAOYSA-N 1-ethenyl-4-methylbenzene toluene Chemical compound CC1=CC=C(C=C)C=C1.CC1=CC=CC=C1 XLVQOTWMBDNMBV-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000011247 coating layer Substances 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 description 23
- 230000008021 deposition Effects 0.000 description 14
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 13
- 239000000178 monomer Substances 0.000 description 13
- 239000002243 precursor Substances 0.000 description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 229920002554 vinyl polymer Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229920000052 poly(p-xylylene) Polymers 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- -1 polyoxymethylene Polymers 0.000 description 3
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011187 composite epoxy material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000011111 cardboard Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- 239000012266 salt solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
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- H01L2224/80007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a permanent auxiliary member being left in the finished device, e.g. aids for protecting the bonding area during or after the bonding process
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- H01L2224/81007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the bump connector during or after the bonding process
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- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/84007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the strap connector during or after the bonding process
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the wire connector during or after the bonding process
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- H01L2224/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
- H01L2224/86007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the TAB connector during or after the bonding process
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- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09872—Insulating conformal coating
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1322—Encapsulation comprising more than one layer
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- Paints Or Removers (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Formation Of Insulating Films (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Laminated Bodies (AREA)
Abstract
本發明係關於一種電子總成,其具有一保形塗層,其中該保形塗層可藉由包含以下步驟之方法獲得:(a)電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於該電子總成之至少一個表面上:
其中:R1表示C1-C3烷基或C2-C3烯基;R2表示氫、C1-C3烷基或C2-C3烯基;R3表示氫、C1-C3烷基或C2-C3烯基;R4表示氫、C1-C3烷基或C2-C3烯基;R5表示氫、C1-C3烷基或C2-C3烯基;且R6表示氫、C1-C3烷基或C2-C3烯基;及
(b)電漿聚合式(I)之化合物及將該所得聚合物沈積於步驟(a)中所形成之聚合物上。
Description
本發明係關於一種經塗覆之電子總成,且係關於製備經塗覆之電子總成之方法。
保形塗層已在電子工業中使用多年以保護電子總成在操作期間免於環境暴露。保形塗層為薄可撓性防護漆層,其符合電子總成(諸如印刷電路板及其組件)之輪廓。
根據IPC定義,存在5種主要類型之保形塗層:AR(丙烯酸)、ER(環氧)、SR(聚矽氧)、UR(胺基甲酸酯)及XY(對二甲苯)。在該等5種類型中,通常認為對二甲苯(或聚對二甲苯)提供最佳化學、電子及物理保護。然而,沈積製程耗時且昂貴,且起始材料係昂貴的。
聚對二甲苯為具有以下結構之聚合物:
聚對二甲苯係使用三級蒸氣沈積製程沈積。固態前驅體在真空下加熱且昇華。重要的是應理解,聚對二甲苯雖然有時錯誤地稱為「對二甲苯」,但事實並非由化合物對二甲苯製成。事實上,前驅體為[2.2]對環芳烷:
接著,使化學蒸氣在約680℃下穿過高溫爐,以使得前驅體***成反應性單體。此反應性單體接著饋送至沈積腔室中,且在基板之表面上聚合。聚對二甲苯之典型塗覆厚度介於5微米與25微米之間。
由於起始材料之高成本、單體產生期間之高熱能消耗、高真空要求及低生長速率,上述聚對二甲苯沈積技術並非理想的。
因此,對提供與聚對二甲苯至少相似之化學、電子及物理保護程度但可更容易且便宜地製造之保形塗層存在需要。對於某些應用,保形塗層可承受再製製程及回流製程中使用之條件亦可為重要的。
本發明發現一種多層塗層提供高效保形塗層,該多層塗層包含藉由電漿聚合氟代烴與式(I)之化合物之混合物所形成之第一層及藉由電漿聚合式(I)之化合物所形成之第二層。基於可僅藉由每一單體之電漿聚合所獲得之單層塗層的性質,塗層可比預期更有效。添加更多經電漿聚合之聚合物層以使得保形塗層包含三個或三個以上層可提供保形塗層之性質的進一步改良。
本發明進一步發現多層塗層提供物理上牢固之保形塗層,其可經受在再製製程中使用溶劑(諸如,2-丙醇)及回流製程中之熱斜升。
因此,本發明提供一種電子總成,其具有保形塗層,其中該保形塗層可藉由包含以下步驟之方法獲得:(a)電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於電子總成之至少
一個表面上:
其中:R1表示C1-C3烷基或C2-C3烯基;R2表示氫、C1-C3烷基或C2-C3烯基;R3表示氫、C1-C3烷基或C2-C3烯基;R4表示氫、C1-C3烷基或C2-C3烯基;R5表示氫、C1-C3烷基或C2-C3烯基;且R6表示氫、C1-C3烷基或C2-C3烯基;及(b)電漿聚合式(I)之化合物,及將所得聚合物沈積於步驟(a)中所形成之聚合物上。
本發明進一步提供一種用於保形塗覆電子總成的方法,該方法包含:(a)電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於電子總成之至少一個表面上:
(I)
其中:R1表示C1-C3烷基或C2-C3烯基;R2表示氫、C1-C3烷基或C2-C3烯基;R3表示氫、C1-C3烷基或C2-C3烯基;R4表示氫、C1-C3烷基或C2-C3烯基;R5表示氫、C1-C3烷基或C2-C3烯基;且R6表示氫、C1-C3烷基或C2-C3烯基;及(b)電漿聚合式(I)之化合物,及將所得聚合物沈積於步驟(a)中所形成之聚合物上。
1‧‧‧基板
2‧‧‧導電軌道
3‧‧‧電子組件
4‧‧‧保形塗層
5‧‧‧表面
6‧‧‧表面
7‧‧‧第一聚合物
8‧‧‧第二聚合物
9‧‧‧第三聚合物
10‧‧‧聚合物
11‧‧‧第四聚合物
12‧‧‧第五聚合物
13‧‧‧第六聚合物
圖1展示本發明之具有保形塗層之電子總成的實例。
圖2至圖4展示圖1中之保形塗層的橫截面,且描繪本發明之較佳塗層的結構。
本發明之保形塗層可藉由電漿聚合特定前驅體化合物及沈積所得聚合物獲得。聚合反應在原位發生。因此,聚合通常在發生沈積的表面上發生。因此,聚合及沈積通常係同時的。
經電漿聚合之聚合物為一種獨特類型之聚合物,其不能由傳統聚合方法製備。經電漿聚合之聚合物具有高度無序之結構,且通常經高度交聯、含有隨機分支且保留一些反應位點。因此,經電漿聚合之聚合物與由熟習此項技術者所知之傳統聚合方法製備之聚合物在化學性質上不同。該等化學區別及物理區別係眾所周知的且在例如Plasma Polymer Films,Hynek Biederman,Imperial College Press 2004中加以描述。
電漿聚合通常在反應器中進行,該反應器產生包含離子化氣態
離子、電子、原子及/或中性物質之氣體電漿。反應器通常包含腔室、真空系統及一或多種能源,儘管可使用經組態以產生氣體電漿之任何適當類型之反應器。能源可包括經組態以將一或多種氣體轉換成氣體電漿之任何適當裝置。較佳地,能源包含加熱器、射頻(RF)發生器及/或微波發生器。
通常,電子總成置放於反應器之腔室中,且真空系統用於抽吸腔室降至10-3毫巴至10毫巴的範圍中之壓力。通常,一或多種氣體接著經泵送至腔室中,且能源產生穩定氣體電漿。通常,一或多種前驅體化合物接著以氣體及/或液體形式引入至腔室中之氣體電漿中。當引入至氣體電漿中時,前驅體化合物通常經離子化及/或分解以在電漿中產生一些活性物質,該等物質聚合產生聚合物。
所沈積之聚合物之精確性質及組成通常視以下條件中之一或多者而定:(i)所選電漿氣體;(ii)所使用之一或多種特定前驅體化合物;(iii)一或多種前驅體化合物之量(其可由一或多種前驅體化合物之壓力及流率之組合決定);(iv)一或多種前驅體化合物之比率;(v)一或多種前驅體化合物之順序;(vi)電漿壓力;(vii)電漿驅動頻率;(viii)脈寬時序;(ix)塗覆時間;(x)電漿功率(包括峰值電漿功率及/或平均電漿功率);(xi)腔室電極設置及/或(xii)引入之總成之製備。
通常,電漿驅動頻率為1kHz至1GHz。通常,電漿功率為100W至250W,較佳為150W至200W,例如,約175W。通常,質量流率為5sccm至100sccm,較佳為5sccm至20sccm,例如,約10sccm。通常,操作壓力為10毫托(mTorr)至100毫托,例如,約50毫托。通常,塗覆時間為10秒至20分鐘。
然而,如技術者將理解,較佳條件將視電漿腔室之大小及幾何形狀而定。因此,視正使用之特定電漿腔室而定,可能有利於技術者修改操作條件。
本發明之保形塗層包含可藉由電漿聚合式(I)之化合物與氟代烴之混合物或摻合物獲得之至少一個層。包含可藉由電漿聚合式(I)之化合物與氟代烴之混合物或摻合物獲得的層增加保形塗層之牢固性。據信,該牢固性可由於保形塗層與待塗覆之基板之間及保形塗層之各層之間的改良的相互作用及黏著而上升。
當單體之該摻合物或混合物經電漿聚合時,作為式(I)之化合物之單體將與為氟代烴之單體及/或為式(I)之化合物之其他單體兩者反應。類似地,作為氟代烴之單體將與為式(I)之化合物之單體及/或為氟代烴之其他單體兩者反應。
式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,通常為自10:90至40:60,較佳為自20:80至40:60,更佳為自25:75至35:65。式(I)之化合物與氟代烴之尤其較佳之莫耳比為30:70。
式(I)之化合物與氟代烴之莫耳比可易於藉由例如修改單體化合物進入電漿腔室之流率而調整。熟習此項技術者可易於調整電漿聚合製程,以達成式(I)之化合物與氟代烴之所需比率。
本發明涉及藉由電漿聚合式(I)之化合物與氟代烴之混合物或摻合物來沈積第一聚合物及接著藉由電漿聚合式(I)之化合物來沈積第二聚合物形成保形塗層。因此,所得保形塗層將包含較佳為離散之兩個層。第一層與電子總成之表面接觸且包含藉由電漿聚合式(I)之化合物及氟代烴所形成之聚合物。此摻合層係有利地,因為其良好附著至基板。第二層與第一層接觸且包含藉由電漿聚合式(I)之化合物所形成之聚合物。經摻合之第一層亦良好附著至第二層,此情況係有利的。
本發明之沈積製程可在每當有需要時重複以形成包含較佳為離散之多個層的保形塗層。
在存在藉由電漿聚合式(I)之化合物與氟代烴所形成之聚合物的兩個或兩個以上層的情況下,所使用之每一式(I)之化合物及每一氟代
烴可為相同或不同的,且較佳為相同的。
在存在藉由電漿聚合式(I)之化合物所形成之聚合物的兩個或兩個以上層的情況下,所使用之每一式(I)之化合物可為相同或不同的,且較佳為相同的。
在存在藉由電漿聚合氟代烴所形成之聚合物的兩個或兩個以上層的情況下,所使用之每一氟代烴可為相同或不同的,且較佳為相同的。
通常較佳的是,最後沈積之聚合物(亦即,形成保形塗層之上表面或環境暴露表面之聚合物)可藉由電漿聚合氟代烴獲得。
本發明之尤其較佳之保形塗層包含四個層。該保形塗層可由以下步驟獲得:(a)電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於電子總成之至少一個表面上;接著(b)電漿聚合式(I)之化合物及將所得聚合物沈積於步驟(a)中所形成之聚合物上;接著(c)電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於步驟(b)中所形成之聚合物上;及接著(d)電漿聚合式(I)之化合物及將所得聚合物沈積於步驟(c)中所形成之聚合物上。視情況,第五層及最終層可藉由電漿聚合氟代烴及將所得聚合物沈積於步驟(d)中所形成之聚合物上而添加。式(I)之化合物及氟代烴較佳地如下所定義,且更佳為1,4-二甲苯及六氟丙烯(C3F6)。
本發明之進一步尤其較佳之保形塗層包含六個層。該保形塗層可由以下步驟獲得:(a)電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於電子總成之至少一個表面上;接著(b)電漿聚合式(I)之化合物及將所得聚合物沈積於步驟(a)中所形成之聚合物上;接著(c)電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至
50:50,及將所得聚合物沈積於步驟(b)中所形成之聚合物上;接著(d)電漿聚合式(I)之化合物及將所得聚合物沈積於步驟(c)中所形成之聚合物上;接著(e)電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於步驟(d)中所形成之聚合物上;及接著(f)電漿聚合式(I)之化合物及將所得聚合物沈積於步驟(e)中所形成之聚合物上。視情況,第七層及最終層可藉由電漿聚合氟代烴及將所得聚合物沈積於步驟(f)中所形成之聚合物上而添加。式(I)之化合物及氟代烴較佳地如下所定義,且更佳為1,4-二甲苯及六氟丙烯(C3F6)。
本發明之保形塗層之厚度將視沈積之每一聚合物的層數目而定。
可藉由電漿聚合式(I)之化合物與氟代烴獲得之層通常具有10nm至100nm之平均厚度,較佳為20nm至50nm,例如,約30nm。
可藉由電漿聚合式(I)之化合物獲得之層通常具有250nm至400nm之平均厚度,較佳為300nm至350nm,例如,約325nm或約330nm。
可藉由電漿聚合氟代烴獲得之層通常具有10nm至100nm之平均厚度,較佳為20nm至60nm,例如,約40nm。
每一層之厚度可容易由技術者控制。電漿聚合以均勻速率沈積聚合物,且因此,所沈積之聚合物之層的厚度與沈積時間成比例。因此,一旦決定沈積速率,則可藉由控制沈積持續時間來沈積具有特定厚度的層。
保形塗層之厚度可為實質上均勻的或可點至點不同。
式(I)之前驅體化合物具有以下結構:
其中R1表示C1-C3烷基或C2-C3烯基;R2表示氫、C1-C3烷基或C2-C3烯基;R3表示氫、C1-C3烷基或C2-C3烯基;R4表示氫、C1-C3烷基或C2-C3烯基;R5表示氫、C1-C3烷基或C2-C3烯基;且R6表示氫、C1-C3烷基或C2-C3烯基。
如本文中所使用,術語C1-C3烷基包含具有1至3個,較佳地1至2個碳原子之直鏈或支鏈烴基。實例包括甲基、乙基、正丙基及異丙基。
如本文中所使用,術語C2-C3烯基包含具有2個或3個碳原子及碳碳雙鍵之直鏈或支鏈烴基。較佳實例為乙烯基。
通常,R1表示甲基或乙烯基。通常,R2表示氫、甲基或乙烯基。通常,R3表示氫、甲基或乙烯基。通常,R4表示氫、甲基或乙烯基。通常,R5表示氫、甲基或乙烯基,較佳為氫。通常,R6表示氫、甲基或乙烯基,較佳為氫。
較佳地,R5及R6表示氫。
更佳地,R1表示甲基或乙烯基;R2表示氫、甲基或乙烯基;R3表示氫、甲基或乙烯基;R4表示氫、甲基或乙烯基;R5表示氫且R6表示氫。
通常較佳地,R2至R4中之兩者表示氫。
式(I)之較佳化合物為1,4-二甲苯、1,3-二甲苯、1,2-二甲苯、甲苯、4-甲基苯乙烯、3-甲基苯乙烯、2-甲基苯乙烯、1,4-二乙烯苯、
1,3-二乙烯苯或1,2-二乙烯苯。1,4-二甲苯係尤其較佳的。
氟代烴為包含氟原子之烴材料。較佳氟代烴為全氟烷烴、全氟烯烴、全氟炔烴、氟代烷、氟代烯及氟代炔,其中該等化合物較佳地含有至多10個碳原子,更佳為至多五個碳原子。較佳實例包括CF4、C2F4、C2F6、C3F6、C3F8及C4F8。最佳之氟代烴為六氟丙烯(C3F6)。
尤其較佳地,該式(I)之化合物或每一式(I)之化合物為1,4-二甲苯、1,3-二甲苯、1,2-二甲苯、甲苯、4-甲基苯乙烯、3-甲基苯乙烯、2-甲基苯乙烯、1,4-二乙烯苯、1,3-二乙烯苯或1,2-二乙烯苯,且該氟代烴或每一氟代烴為CF4、C2F4、C2F6、C3F6、C3F8或C4F8。尤其較佳之組合為1,4-二甲苯及六氟丙烯(C3F6)。
電子總成通常包含:一包含絕緣材料之基板;一或多個存在於基板之至少一個表面上的導電軌道;及至少一個連接至至少一個導電軌道之電子組件。因此,保形塗層通常覆蓋存在該一或多個導電軌道之基板之表面、一或多個導電軌道及至少一個電子組件。
導電軌道通常包含任何適當之導電材料。較佳地,導電軌道包含金、鎢、銅、銀、鋁、半導體基板之摻合區、導電聚合物及/或導電油墨。更佳地,導電軌道包含金、鎢、銅、銀或鋁。
導電軌道之適當形狀及組態可由熟習此項技術者選擇以用於討論中之特定總成。通常,導電軌道沿其整個長度附接至基板之表面。或者,導電軌道可在兩個或兩個以上點處附接至基板。例如,導電軌道可為在兩個或兩個以上點處但不沿其整個長度附接至基板的導線。
導電軌道通常係使用熟習此項技術者所知之任何適當方法形成於基板上。在較佳方法中,導電軌道係使用「刪減」技術形成於基板上。通常,在此方法中,將金屬層(例如,銅箔、鋁箔等)黏結至基板表面,且接著,移除金屬層之不需要的部分,從而留下所需導電軌道。金屬層之不需要的部分通常藉由化學蝕刻或光蝕刻、研磨自基板
移除。在替代的較佳方法中,導電軌道係使用「遞增」技術形成於基板上,諸如(例如)電鍍、使用反向遮罩之沈積及/或任何幾何控制之沈積製程。或者,基板可為通常具有摻合區域作為導電軌道之矽晶粒或矽晶圓。
基板通常包含防止基板使電子總成之電路短路的任何適當絕緣材料。基板較佳地包含環氧樹脂層壓材料、合成樹脂黏結紙、環氧樹脂黏結玻璃布(ERBGH)、複合環氧樹脂材料(CEM)、PTFE(特氟龍)或其他聚合物材料、酚棉紙、矽、玻璃、陶瓷、紙、卡紙板、天然及/或合成木基材料及/或其他適當織物。基板視情況進一步包含阻燃材料,通常為阻燃劑2(FR-2)及/或阻燃劑4(FR-4)。基板可包含單層絕緣材料或多層相同或不同絕緣材料。基板可為由以上所列之材料中之任一者製成之印刷電路板(PCB)之板。
電子組件可為電子總成之任何適當電路元件。較佳地,電子組件為電阻器、電容器、電晶體、二極體、放大器、天線或振盪器。任何適當數目之電子組件及/或電子組件之組合可連接至電子總成。
電子組件較佳地經由接合連接至導電軌道。接合較佳地為焊接接頭、熔接接頭、絲焊接頭、導電黏結接頭、壓接或壓入配合接頭。熟習此項技術者已知適當焊接、熔接、絲焊、導電黏結及壓入配合技術用於形成接合。更佳地,接合為焊接接頭、熔接接頭或絲焊接頭,其中焊接接頭係最佳的。
現將參看圖1至圖4中所示之實施例描述本發明之態樣,其中相同元件符號係指相同或相似組件。
圖1展示本發明之電子總成之實例。電子總成包含基板1,其包含絕緣材料;一或多個導電軌道2,其存在於基板1之至少一個表面上;及至少一個電子組件3,其連接至至少一個導電軌道2。保形塗層4覆蓋一或多個導電軌道2、至少一個電子組件3及基板1之表面5,一
或多個導電軌道及至少一個電子組件位於該表面5上。
圖2展示圖1中之保形塗層4之較佳實例的橫截面。保形塗層包含:第一聚合物7,其可藉由以下步驟獲得:電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於電子總成之至少一個表面6上;及第二聚合物8,其可藉由電漿聚合式(I)之化合物及將所得聚合物沈積於聚合物7上獲得。視情況,添加第三聚合物10,其可藉由電漿聚合氟代烴及將所得聚合物沈積於聚合物8上獲得。
圖3展示圖1之保形塗層4之另一較佳實例的橫截面。保形塗層包含:第一聚合物7,其可藉由以下步驟獲得:電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於電子總成之至少一個表面6上;第二聚合物8,其可藉由電漿聚合式(I)之第一化合物及將所得聚合物沈積於聚合物7上獲得;第三聚合物9,其可藉由以下步驟獲得:電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於聚合物8上;及第四聚合物11,其可藉由電漿聚合式(I)之第二化合物及將所得聚合物沈積於聚合物9上獲得。視情況,添加第五聚合物10,其可藉由電漿聚合氟代烴及將所得聚合物沈積於聚合物11上獲得。
圖4展示圖1之保形塗層4之另一較佳實例的橫截面。保形塗層包含:第一聚合物7,其可藉由以下步驟獲得:電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於電子總成之至少一個表面6上;第二聚合物8,其可藉由電漿聚合式(I)之第一化合物及將所得聚合物沈積於聚合物7上獲得;第三聚合物9,其可藉由以下步驟獲得:電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至
50:50,及將所得聚合物沈積於聚合物8上;第四聚合物11,其可藉由電漿聚合式(I)之第二化合物及將所得聚合物沈積於聚合物9上獲得;第五聚合物12,其可藉由以下步驟獲得:電漿聚合式(I)之化合物與氟代烴,其中式(I)之化合物與氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於聚合物11上;及第六聚合物13,其可藉由電漿聚合式(I)之第二化合物及將所得聚合物沈積於聚合物12上獲得。視情況,添加第七聚合物10,其可藉由電漿聚合氟代烴及將所得聚合物沈積於聚合物13上獲得。
現將參看實例描述本發明之態樣。
將待塗覆之電子總成置放於電漿沈積腔室中,且將大氣抽空至50毫托。使用質量流量控制器以5.7sccm之流率將1,4-二甲苯引入腔室中,且使用質量流量控制器以19sccm之流率將六氟丙烯引入腔室中。此舉提供腔室中六氟丙烯與1,4-二甲苯之70:30之莫耳比。
以300W之功率接通RF發生器,且形成電漿。1,4-二甲苯及六氟丙烯經離子化,且接著發生反應以在電子總成上形成連續及保形塗層。一旦形成所需塗層厚度,則斷開RF發生器,且停止單體流動。
保持腔室中之真空且接著使用質量流量控制器以近似19sccm之流率將1,4-二甲苯引入腔室。以300W之功率接通RF發生器且形成電漿。1,4-二甲苯經離子化,且接著自身發生反應以在先前塗層上形成連續及保形塗層。一旦形成所需塗層厚度,則斷開RF發生器,且停止1,4-二甲苯之流動。
在保持真空之同時將以上工序重複兩次。
最後,使用質量流量控制器以近似27sccm之流率將六氟丙烯引入腔室。以300W之功率接通RF發生器且形成電漿。六氟丙烯經離子
化,且接著自身發生反應以在先前塗層上形成連續及保形塗層。一旦形成所需塗層厚度,則斷開RF發生器且停止六氟丙烯之流動。
使腔室進入大氣壓力且被打開,並移除具有保形塗層之電子總成。
下表1中描述多層塗層之結構。每一層之厚度係使用輪廓儀量測。
將待塗覆之電子總成置放於電漿沈積腔室中,且將大氣抽空至50毫托。使用質量流量控制器以27sccm之流率將六氟丙烯引入腔室。
以300W之功率接通RF發生器且形成電漿。六氟丙烯經離子化,且接著發生反應以在電子總成上形成連續及保形之塗層。一旦形成所需塗層厚度,則斷開RF發生器且停止單體流動。
保持腔室中之真空且接著使用質量流量控制器以近似19sccm之流率將1,4-二甲苯引入腔室。以300W之功率接通RF發生器且形成電漿。1,4-二甲苯經離子化,且接著自身發生反應以在先前塗層上形成連續及保形塗層。一旦形成所需塗層厚度,則斷開RF產生器,且停止1,4-二甲苯之流動。
在保持真空之同時將以上工序重複三次,接著最後塗覆如上所
述之經電漿聚合之六氟丙烯氣體層。使腔室進入大氣壓力且被打開,並移除具有保形塗層之電子總成。
下表2中描述多層塗層之結構。每一層之厚度係使用輪廓儀量測。
實例1及比較實例1中所形成之塗層係使用標準膠帶測試來測試牢固性。蘇格蘭透明膠帶600(1/2英吋)施加至根據實例1或比較實例1所塗覆之Au載片、接著使用帶輥以均勻壓力輥壓兩次且以一個自左向右的完全揭膜移除。
接著使用傅立葉轉換紅外光譜學(FTIR)來決定塗層是否保持完整。實例1之塗層保持完整(在膠帶測試之前及之後,FTIR跡線沒有差異)。比較實例1之大部分塗層經移除(測試之後的FTIR跡線指示極少塗層保留)。此情況說明實例1之塗層比比較實例1之塗層更牢固。
實例1及比較實例1之塗層藉由跨浸入10g/L之鹽溶液中之經塗覆總成施加10V之電勢來測試。當跨塗層之電流洩漏在經過48小時測試(2880分鐘)達到100μA時記錄失效。亦測試塗覆有900nm之單層經電漿聚合之1,4-二甲苯(表3中以PDMB表示)或50nm之單層經電漿聚合之
六氟丙烯(表3中以PHFP表示)之總成。記錄經塗覆之總成的平均失效時間。下表3中列出結果。
該等結果展示作為保形塗層之實例1之塗層達成與比較實例1之塗層相似的保護程度。實例1與比較實例1兩者之塗層提供比僅單層塗層高得多之保護程度。
Claims (13)
- 一種電子總成,其具有一保形塗層,其中該保形塗層可藉由包含以下步驟之方法獲得:(a)電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將所得聚合物沈積於該電子總成之至少一個表面上:
- 如請求項1之電子總成,其中該保形塗層可藉由包含以下步驟之方法獲得:(a)電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將該所得聚合物沈積於 該電子總成之至少一個表面上,(b)電漿聚合式(I)之化合物及將該所得聚合物沈積於步驟(a)中所形成之該聚合物上,(c)電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將該所得聚合物沈積於步驟(b)中所形成之該聚合物上,及(d)電漿聚合式(I)之化合物,及將該所得聚合物沈積於步驟(c)中所形成之該聚合物上。
- 如請求項1或2之電子總成,其中該保形塗層可藉由包含以下步驟之方法獲得:(a)電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將該所得聚合物沈積於該電子總成之至少一個表面上,(b)電漿聚合式(I)之化合物,及將該所得聚合物沈積於步驟(a)中所形成之該聚合物上,(c)電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將該所得聚合物沈積於步驟(b)中所形成之該聚合物上,(d)電漿聚合式(I)之化合物,及將該所得聚合物沈積於步驟(c)中所形成之該聚合物上,(e)電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將該所得聚合物沈積於步驟(d)中所形成之該聚合物上,及(f)電漿聚合式(I)之化合物,及將該所得聚合物沈積於步驟(e)中所形成之該聚合物上。
- 如請求項1或2之電子總成,其中該方法進一步包含一最終步 驟:電漿聚合氟代烴及將該所得聚合物沈積於該前一步驟中所形成之該聚合物上。
- 如請求項1或2之電子總成,其中該式(I)之化合物或每一式(I)之化合物為1,4-二甲苯、1,3-二甲苯、1,2-二甲苯、甲苯、4-甲基苯乙烯、3-甲基苯乙烯、2-甲基苯乙烯、1,4-二乙烯苯、1,3-二乙烯苯或1,2-二乙烯苯。
- 如請求項1或2之電子總成,其中該氟代烴或每一氟代烴為CF4、C2F4、C2F6、C3F6、C3F8或C4F8。
- 如請求項1或2之電子總成,其中該式(I)之化合物或每一式(I)之化合物為1,4-二甲苯,且該氟代烴為C3F6。
- 如請求項1或2之電子總成,其中在該層或每一層中,該式(I)之化合物與該氟代烴之莫耳比為自25:75至35:65。
- 如請求項1或2之電子總成,其包含:一包含絕緣材料之基板;一或多個存在於該基板之至少一個表面上的導電軌道;及至少一個連接至至少一個導電軌道之電子組件。
- 如請求項9之電子總成,其中該保形塗層覆蓋該一或多個導電軌道、該至少一個電子組件及該基板之該表面,該一或多個導電軌道及該至少一個電子組件位於該基板之該表面上。
- 一種用於保形塗覆電子總成之方法,該方法如請求項1至8中之任一項定義。
- 如請求項11之方法,其中該電子總成包含:一包含絕緣材料之基板;一或多個存在於該基板之至少一個表面上的導電軌道;及至少一個連接至至少一個導電軌道之電子組件。
- 如請求項12之方法,其包含:電漿聚合式(I)之化合物與氟代烴,其中該式(I)之化合物與該氟代烴之莫耳比為自5:95至50:50,及將該所得聚合物沈積於該一或多個導電軌道、該至少 一個電子組件及該基板之該表面上,該一或多個導電軌道及該至少一個電子組件位於該基板之該表面上。
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KR (1) | KR20150135420A (zh) |
CN (1) | CN105075408B (zh) |
GB (1) | GB201305500D0 (zh) |
TW (1) | TWI625366B (zh) |
WO (1) | WO2014155099A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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GB201305500D0 (en) * | 2013-03-26 | 2013-05-08 | Semblant Ltd | Coated electrical assembly |
GB201403558D0 (en) | 2014-02-28 | 2014-04-16 | P2I Ltd | Coating |
AU2016275277A1 (en) * | 2015-06-09 | 2018-02-01 | P2I Ltd | Coating |
CN109071966B (zh) * | 2015-06-09 | 2022-07-22 | P2I有限公司 | 涂层 |
CN109923950B (zh) * | 2016-11-11 | 2021-09-21 | 株式会社村田制作所 | 陶瓷基板以及陶瓷基板的制造方法 |
GB201621177D0 (en) | 2016-12-13 | 2017-01-25 | Semblant Ltd | Protective coating |
BE1024652B1 (nl) * | 2017-06-23 | 2018-05-16 | P2I Ltd | Coatings |
CN110720131B (zh) | 2017-07-03 | 2022-05-31 | 京瓷Avx元器件公司 | 固体电解质电容器组件 |
EP3649661A4 (en) | 2017-07-03 | 2021-03-31 | AVX Corporation | SOLID ELECTROLYTIC CAPACITOR CONTAINING A NANORECOAT |
CN110129769B (zh) * | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 疏水性的低介电常数膜及其制备方法 |
CN110158052B (zh) | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 低介电常数膜及其制备方法 |
CH719600A1 (fr) * | 2022-04-12 | 2023-10-31 | Graphenaton Tech Sa | Procede de fabrication d'une structure électronique multicouches flexible. |
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JPS6038728A (ja) * | 1983-08-09 | 1985-02-28 | Konishiroku Photo Ind Co Ltd | 磁気記録媒体およびその製造方法 |
US20040185678A1 (en) * | 1999-04-15 | 2004-09-23 | Lee Wei William | Integrated circuit dielectric and method |
US20070020451A1 (en) * | 2005-07-20 | 2007-01-25 | 3M Innovative Properties Company | Moisture barrier coatings |
JP5127300B2 (ja) * | 2007-05-28 | 2013-01-23 | キヤノン株式会社 | フルオレン化合物及びそれを用いた有機発光素子並びに表示装置 |
JP2009027036A (ja) * | 2007-07-20 | 2009-02-05 | Fujifilm Corp | 表示装置及び欠陥画素のリペア方法 |
GB2462824A (en) * | 2008-08-18 | 2010-02-24 | Crombie 123 Ltd | Printed circuit board encapsulation |
GB201003067D0 (en) * | 2010-02-23 | 2010-04-07 | Semblant Ltd | Plasma-polymerized polymer coating |
US8995146B2 (en) * | 2010-02-23 | 2015-03-31 | Semblant Limited | Electrical assembly and method |
GB2500138B (en) * | 2012-03-06 | 2014-03-19 | Semblant Ltd | Coated electrical assembly and method |
TWI523294B (zh) * | 2012-11-30 | 2016-02-21 | Lg化學股份有限公司 | 用於有機電子裝置之基板 |
GB201305500D0 (en) * | 2013-03-26 | 2013-05-08 | Semblant Ltd | Coated electrical assembly |
US20150001700A1 (en) * | 2013-06-28 | 2015-01-01 | Infineon Technologies Ag | Power Modules with Parylene Coating |
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US20170245374A1 (en) | 2017-08-24 |
US9992875B2 (en) | 2018-06-05 |
GB201305500D0 (en) | 2013-05-08 |
EP2979524A1 (en) | 2016-02-03 |
CN105075408B (zh) | 2018-11-13 |
CN105075408A (zh) | 2015-11-18 |
WO2014155099A1 (en) | 2014-10-02 |
JP6305514B2 (ja) | 2018-04-04 |
JP2016521296A (ja) | 2016-07-21 |
KR20150135420A (ko) | 2015-12-02 |
TW201446890A (zh) | 2014-12-16 |
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