JP2016521296A - コーティングされた電気アセンブリ - Google Patents
コーティングされた電気アセンブリ Download PDFInfo
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- JP2016521296A JP2016521296A JP2016504746A JP2016504746A JP2016521296A JP 2016521296 A JP2016521296 A JP 2016521296A JP 2016504746 A JP2016504746 A JP 2016504746A JP 2016504746 A JP2016504746 A JP 2016504746A JP 2016521296 A JP2016521296 A JP 2016521296A
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- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 claims description 3
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 8
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 abstract 6
- 125000003342 alkenyl group Chemical group 0.000 abstract 6
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- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 14
- 239000000178 monomer Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 12
- 239000002243 precursor Substances 0.000 description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 11
- 229920002554 vinyl polymer Polymers 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 229920000052 poly(p-xylylene) Polymers 0.000 description 7
- 239000002356 single layer Substances 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
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- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
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- 239000004215 Carbon black (E152) Substances 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
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- 239000004332 silver Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 0 *c1c(*)c(*)c(*)c(*)c1* Chemical compound *c1c(*)c(*)c(*)c(*)c1* 0.000 description 1
- OOLUVSIJOMLOCB-UHFFFAOYSA-N 1633-22-3 Chemical group C1CC(C=C2)=CC=C2CCC2=CC=C1C=C2 OOLUVSIJOMLOCB-UHFFFAOYSA-N 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
- H01L2224/86007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the TAB connector during or after the bonding process
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
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- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
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- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
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- Manufacturing & Machinery (AREA)
- Paints Or Removers (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Formation Of Insulating Films (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Laminated Bodies (AREA)
Abstract
Description
(a) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーの電気アセンブリの少なくとも1つの表面上への堆積、
R1は、C1-C3アルキル又はC2-C3アルケニルを表し、
R2は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R3は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R4は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R5は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、及び
R6は、水素、C1-C3アルキル又はC2-C3アルケニルを表す)、及び
(b) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(a)で形成されたポリマー上への堆積
を含む方法によって得ることができる、電気アセンブリを提供する。
(a) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーの電気アセンブリの少なくとも1つの表面上への堆積、
R1は、C1-C3アルキル又はC2-C3アルケニルを表し、
R2は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R3は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R4は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R5は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、及び
R6は、水素、C1-C3アルキル又はC2-C3アルケニルを表す)、及び
(b) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(a)で形成されたポリマー上への堆積
を含む、方法をさらに提供する。
コーティングされる電気アセンブリをプラズマ堆積チャンバー内に配置し、雰囲気を50mTorrに排気した。マスフローコントローラを使用して1,4-ジメチルベンゼンをチャンバーに流量5.7sccmで導入し、マスフローコントローラを使用してヘキサフルオロプロピレンをチャンバーに流量19sccmで導入した。これにより、チャンバーにおけるヘキサフルオロプロピレン対1,4-ジメチルベンゼンの70:30のモル比を提供する。
コーティングされる電気アセンブリをプラズマ堆積チャンバー内に配置し、雰囲気を50mTorrに排気した。マスフローコントローラを使用してヘキサフルオロプロピレンガスをチャンバーに流量27sccmで導入した。
実施例1及び比較例1で形成されたコーティングを、標準テープ試験を用いて、頑健性について試験した。スコッチ透明テープ(Scotch Transparent Tape)600 (1/2インチ)を、実施例1又は比較例1に従って被覆された金スライドに付け、次いでテープロールで均一な圧力で二回ならし、左から右への一度の完全な剥離で除去した。
実施例1及び比較例1のコーティングを、10g/Lの塩溶液に浸漬したコーティングされたアセンブリに10Vの電位を印加することにより試験した。48時間試験(2880分)の間、コーティング間の電流漏れが100μAに達したときに、不具合(failure)を記録した。プラズマ重合された1,4-ジメチルベンゼン(表3にてPDMBと示す)の900nmの単一層又はプラズマ重合されたヘキサフルオロプロピレン(表3にてPHFPと示す)の50nmの単一層で被覆されたアセンブリも試験した。コーティングされたアセンブリの不具合までの平均時間を記録した。これらの結果を表3に記載する。
Claims (13)
- コンフォーマルコーティングを有する電気アセンブリであって、
前記コンフォーマルコーティングが、
(a) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーの電気アセンブリの少なくとも1つの表面上への堆積、
R1は、C1-C3アルキル又はC2-C3アルケニルを表し、
R2は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R3は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R4は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、
R5は、水素、C1-C3アルキル又はC2-C3アルケニルを表し、及び
R6は、水素、C1-C3アルキル又はC2-C3アルケニルを表す)、及び
(b) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(a)で形成されたポリマー上への堆積
を含む方法によって得ることができる、電気アセンブリ。 - 前記コンフォーマルコーティングが、
(a) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーの電気アセンブリの少なくとも1つの表面上への堆積、
(b) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(a)で形成されたポリマー上への堆積、
(c) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーのステップ(b)で形成されたポリマー上への堆積、及び
(d) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(c)で形成されたポリマー上への堆積
を含む方法によって得ることができる、請求項1に記載の電気アセンブリ。 - 前記コンフォーマルコーティングが、
(a) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーの電気アセンブリの少なくとも1つの表面上への堆積、
(b) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(a)で形成されたポリマー上への堆積、
(c) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーのステップ(b)で形成されたポリマー上への堆積、
(d) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(c)で形成されたポリマー上への堆積、
(e) 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、及び生成したポリマーのステップ(d)で形成されたポリマー上への堆積、及び
(f) 式(I)の化合物のプラズマ重合及び生成したポリマーのステップ(e)で形成されたポリマー上への堆積
を含む方法によって得ることができる、請求項1又は2に記載の電気アセンブリ。 - 方法が、フルオロ炭化水素のプラズマ重合及び生成したポリマーの先行ステップで形成されたポリマー上への堆積の最終ステップをさらに含む、請求項1〜3のいずれか1項に記載の電気アセンブリ。
- 式(I)の化合物又は各化合物が、1,4-ジメチルベンゼン、1,3-ジメチルベンゼン、1,2-ジメチルベンゼン、トルエン、4-メチルスチレン、3-メチルスチレン、2-メチルスチレン、1,4-ジビニルベンゼン、1,3-ジビニルベンゼン又は1,2-ジビニルベンゼンである、請求項1〜4のいずれか1項に記載の電気アセンブリ。
- フルオロ炭化水素又は各フルオロ炭化水素が、CF4、C2F4、C2F6、C3F6、C3F8又はC4F8である、請求項1〜5のいずれか1項に記載の電気アセンブリ。
- 式(I)の化合物又は各化合物が1,4-ジメチルベンゼンであり、フルオロ炭化水素がC3F6である、請求項1〜6のいずれか1項に記載の電気アセンブリ。
- 層又は各層における式(I)の化合物対フルオロ炭化水素のモル比が、25:75〜35:65である、請求項1〜7のいずれか1項に記載の電気アセンブリ。
- 絶縁材料を含む基板、基板の少なくとも1つの表面に存在する1つ以上の伝導性トラック、及び少なくとも1つの伝導性トラックに接続された少なくとも1つの電気部品を含む、請求項1〜8のいずれか1項に記載の電気アセンブリ。
- コンフォーマルコーティングが、1つ以上の伝導性トラック、少なくとも1つの電気部品、並びに1つ以上の伝導性トラック及び少なくとも1つの電気部品が配置された基板の表面を覆う、請求項9に記載の電気アセンブリ。
- 電気アセンブリにコンフォーマルコーティングを施すための方法であって、請求項1乃至8のいずれか1項に記載される、方法。
- 電気アセンブリが、絶縁材料を含む基板、基板の少なくとも1つの表面に存在する1つ以上の伝導性トラック、及び少なくとも1つの伝導性トラックに接続された少なくとも1つの電気部品を含む、請求項11に記載の方法。
- 式(I)の化合物及びフルオロ炭化水素のプラズマ重合、ここで、式(I)の化合物対フルオロ炭化水素のモル比が5:95〜50:50であり、並びに1つ以上の伝導性トラック、少なくとも1つの電気部品及び1つ以上の伝導性トラックと少なくとも1つの電気部品とが配置された基板の表面上への生成したポリマーの堆積を含む、請求項12に記載の方法。
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