TWI624044B - 微元件轉移系統 - Google Patents

微元件轉移系統 Download PDF

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TWI624044B
TWI624044B TW106108612A TW106108612A TWI624044B TW I624044 B TWI624044 B TW I624044B TW 106108612 A TW106108612 A TW 106108612A TW 106108612 A TW106108612 A TW 106108612A TW I624044 B TWI624044 B TW I624044B
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micro
thin film
substrate
film transistor
conductive layer
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吳炳昇
Biing-Seng Wu
吳昭文
Chao-Wen Wu
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啟端光電股份有限公司
Prilit Optronics, Inc.
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Priority to TW106108612A priority Critical patent/TWI624044B/zh
Priority to CN201810124811.0A priority patent/CN108630591B/zh
Priority to US15/894,412 priority patent/US10727095B2/en
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Abstract

一種微元件轉移系統包含：轉移頭，包含複數拾取電極，用以分別拾取複數微元件，且包含複數薄膜電晶體，分別相應於該些拾取電極；轉移頭支架，用以支持轉移頭；薄膜電晶體驅動板，電性連接以驅動控制該些薄膜電晶體；供給基板或接受基板，用以承載該些微元件；及基板支架，用以支持供給基板或接受基板。

Description

微元件轉移系統
本發明係有關一種微元件（micro device）轉移系統，特別是關於一種使用薄膜電晶體（TFT）的微元件轉移系統。
微發光二極體（microLED、mLED或μLED）顯示面板為平板顯示器（flat panel display）的一種，其係由尺寸等級為1~10微米之個別精微（microscopic）發光二極體所組成。相較於傳統液晶顯示面板，微發光二極體顯示面板具較大對比度及較快反應時間，且消耗較少功率。微發光二極體與有機發光二極體（OLED）雖然同樣具有低功耗的特性，但是，微發光二極體因為使用三-五族二極體技術（例如氮化鎵），因此相較於有機發光二極體具有較高的亮度（brightness）、較高的發光效能（luminous efficacy）及較長的壽命。
於製造微發光二極體顯示面板時，必須吸取個別的微發光二極體並轉移至顯示面板。通常係使用靜電（electrostatic）力、磁力或真空吸力以吸取微發光二極體。傳統靜電力的吸取轉移設備主要使用微機電系統（MicroElectroMechanical System, MEMS）技術，其具複雜架構、高成本與低良率等缺點。傳統磁力的吸取轉移設備也是使用微機電系統技術，因此同樣具複雜架構、高成本與低良率等缺點。此外，需要額外塗佈磁力材料於微發光二極體，因而需要額外的製程與成本。傳統真空吸力的吸取轉移設備使用微真空吸嘴（micro nozzle），其高度與內徑的比值必須小於一臨界數值，才能確保吸取能力。當微發光二極體的尺寸非常小，真空吸嘴的高度（或厚度）也需跟著變小。因此，於操作時容易造成吸取轉移設備的變形而降低吸取效率，甚至造成吸取轉移設備的破裂。因此，傳統真空吸力的吸取轉移設備不適於較小微元件的吸取。
囿於製造技術或成本的考量，傳統吸取轉移設備的吸取頭數目無法提高，因此不適於大尺寸（例如十吋以上）微發光二極體顯示面板的製程。亦即，傳統吸取轉移設備無法達到大量轉移（mass transfer）微發光二極體之目的。
於進行微發光二極體的吸取轉移時，實務上會有少量單獨的微發光二極體未被正常吸取或釋放。傳統吸取轉移設備很難或者無法單獨選取吸取頭以修補該些不正常位置的微發光二極體。亦即，傳統吸取轉移設備無法達到單獨修補微發光二極體之目的。
因此亟需提出一種新穎的微元件轉移系統，以改善傳統吸取轉移設備的諸多缺失。
鑑於上述，本發明實施例的目的之一在於提出一種微元件轉移系統，相較於傳統吸取轉移設備具簡化架構及較低成本的優點。本發明實施例之微元件轉移系統可達到大量轉移及單獨修補微元件之目的。此外，本發明實施例之微元件轉移系統適於大尺寸面板的製程。
根據本發明實施例，微元件轉移系統包含轉移頭、轉移頭支架、薄膜電晶體驅動板、供給基板或接受基板、及基板支架。轉移頭包含複數拾取電極，用以分別拾取複數微元件，且包含複數薄膜電晶體，分別相應於該些拾取電極。轉移頭支架用以支持轉移頭。薄膜電晶體驅動板電性連接以驅動控制該些薄膜電晶體。供給基板或接受基板用以承載該些微元件。基板支架用以支持供給基板或接受基板。
第一圖顯示本發明實施例之微元件（micro device）轉移系統100的側面示意圖。在本說明書中，微元件（未顯示）的尺寸等級為1~100微米。在一實施例中，微元件係為微發光二極體（microLED），其尺寸等級為1~10微米。本實施例之微元件轉移系統100可適用於大尺寸（例如十吋以上）面板的製程。
在本實施例中，微元件轉移系統100包含轉移頭支架（transfer head holder）11，用以支持轉移頭12，使得轉移頭12的頂面支撐固定於轉移頭支架11的底面。轉移頭支架11的內部可包含加熱器（未顯示），有利於微元件的轉移與接合（bonding）。轉移頭支架11的內部也可包含真空裝置（未顯示），用以吸住轉移頭12。
本實施例之轉移頭12包含複數拾取電極（pick-up electrode），設於轉移頭12的底面且位於工作區內（例如轉移頭支架11的覆蓋區內），用以分別拾取複數微元件。根據本實施例的特徵之一，轉移頭12包含複數薄膜電晶體（TFT），設於轉移頭12的底面，分別相應於該些拾取電極。
轉移頭12還包含薄膜電晶體驅動板121，電性連接以驅動控制該些薄膜電晶體。本實施例之轉移頭12還可包含延伸部122，其延伸而位於工作區外（例如轉移頭支架11的覆蓋區外）。延伸部122的一端鄰近轉移頭支架11，延伸部122的另一端的底面則連接薄膜電晶體驅動板121。
在本實施例中，微元件轉移系統100還包含基板支架（substrate holder）13，用以支持一供給（donor）或接受（acceptor）基板14，使得供給/接受基板14的底面支撐固定於基板支架13的頂面。藉此，轉移頭12拾取供給基板14頂面承載的微元件，經轉移後，轉移頭12釋放（release）微元件使其接合於接受基板14的頂面。在進行拾取、轉移與釋放的過程當中，前述轉移頭12的延伸部122可作為緩衝區，以避免薄膜電晶體驅動板121與供給/接受基板14之間的碰撞。基板支架13的內部可包含加熱器（未顯示），用以幫助微元件的轉移與接合（bonding）。基板支架13的內部也可包含真空裝置（未顯示），用以吸住供給/接受基板14。
第二圖顯示第一圖之轉移頭12的系統方塊圖。在本實施例中，轉移頭12包含複數薄膜電晶體T，排列為矩陣形式，因而形成薄膜電晶體主動式矩陣（TFT active matrix）。同一列的薄膜電晶體T的閘極G連接並受控於掃描驅動器123，同一行的薄膜電晶體T的源極S連接並受控於源極驅動器124。掃描驅動器123與源極驅動器124則受控於時序控制器125，其再受控於外部的控制器（未圖式）。上述掃描驅動器123、源極驅動器124與時序控制器125設於薄膜電晶體驅動板121上。每一薄膜電晶體T的汲極D連接至相應電容器C。根據本實施例的另一特徵，每一薄膜電晶體T的汲極D還連接至相應拾取電極126，用以分別拾取微元件。拾取電極126的間距為P。
第三A圖顯示第二圖之薄膜電晶體T的剖面圖。在本實施例中，薄膜電晶體T包含基板30，例如玻璃基板。閘極導電層31（例如閘極金屬層）形成於基板30上，作為薄膜電晶體T的閘極G。閘極絕緣層32（例如氮化閘極層）形成於閘極導電層31與基板30上。源極導電層33（例如源極金屬層）與汲極導電層34（例如汲極金屬層）形成於閘極絕緣層32上，分別作為源極S與汲極D。源極導電層33、汲極導電層34分別與閘極導電層31的兩端重疊。
薄膜電晶體T還包含平坦化（planarization）層35（例如有機平坦化層）形成於閘極絕緣層32、源極導電層33與汲極導電層34上。屏蔽（shielding）導電層36形成於平坦化層35上。絕緣層37形成於屏蔽導電層36上。根據本實施例的特徵之一，拾取電極層38形成於絕緣層37上及絕緣層37與平坦化層35的穿孔(via)380內，且連接至汲極導電層34。拾取電極層38穿透絕緣層37、屏蔽導電層36及平坦化層35，且不與屏蔽導電層36接觸。覆蓋（overcoat）層39形成於絕緣層37與拾取電極層38上，用以保護拾取電極126。在一實施例中，覆蓋層39可包含緩衝材質，用以緩衝供給/接受基板14表面的粒子（particle），以避免轉移頭12受到損害。第三A圖所例示的拾取電極層38填滿穿透絕緣層37與平坦化層35的穿孔(via)380。第三B圖顯示第二圖之薄膜電晶體T的另一剖面圖。在此實施例中，拾取電極層38則是形成於穿孔380的側壁。
第四圖顯示第二、三圖之薄膜電晶體T的透視圖。如圖所示，每一薄膜電晶體T的汲極D連接相應拾取電極126，其穿透過屏蔽導電層36。上述屏蔽導電層36可避免拾取電極126受到薄膜電晶體T的驅動電壓的影響而產生誤吸取。在一實施例中，拾取電極126須施以足夠電壓，以產生靜電力而吸取微元件。因此，薄膜電晶體T須為高電壓電晶體，其可承受足夠的電壓。在另一實施例中，轉移頭12可同時應用磁力原理以吸取微元件，因此拾取電極126所施電壓即可大幅降低，薄膜電晶體T的耐壓也可降低。
第五圖例示承載於接受基板14的微發光二極體顯示面板畫素51的俯視示意圖。在此例子中，共有九個微發光二極體顯示面板畫素51，排列為3x3矩陣。P代表微發光二極體52的間距，亦即拾取電極126的間距（第二圖），Q代表微發光二極體顯示面板畫素51的間距。在本實施例中，Q為P的整數倍。藉此，時序控制器125可控制掃描驅動器123與源極驅動器124以進行選址（addressing），使得轉移頭12的拾取電極126得以選擇性（從供給基板14）拾取微發光二極體52，再將微發光二極體52釋放並接合於接受基板14的預設位置，以進行修補（repair）工作。因此，相較於傳統的微元件轉移系統，本實施例可提高成本效益。
根據上述實施例，本實施例使用薄膜電晶體的架構、製程與驅動技術，可製造大數量的拾取電極126，以實現微元件的大量轉移（mass transfer）目的，適用於大尺寸面板。由於薄膜電晶體可進行獨立選址（addressing），因此本實施例也可用以進行單一或少數微元件的處理，例如微元件的修補。
以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍內。
100‧‧‧微元件轉移系統
11‧‧‧轉移頭支架
12‧‧‧轉移頭
121‧‧‧薄膜電晶體驅動板
122‧‧‧延伸部
123‧‧‧掃描驅動器
124‧‧‧源極驅動器
125‧‧‧時序控制器
126‧‧‧拾取電極
13‧‧‧基板支架
14‧‧‧供給/接受基板
30‧‧‧基板
31‧‧‧閘極導電層
32‧‧‧閘極絕緣層
33‧‧‧源極導電層
34‧‧‧汲極導電層
35‧‧‧平坦化層
36‧‧‧屏蔽導電層
37‧‧‧絕緣層
38‧‧‧拾取電極層
380‧‧‧穿孔
39‧‧‧覆蓋層
51‧‧‧微發光二極體顯示面板畫素
52‧‧‧微發光二極體
G‧‧‧閘極
S‧‧‧源極
D‧‧‧汲極
T‧‧‧薄膜電晶體
C‧‧‧電容器
P‧‧‧間距
Q‧‧‧間距
第一圖顯示本發明實施例之微元件轉移系統的側面示意圖。 第二圖顯示第一圖之轉移頭的系統方塊圖。 第三A圖顯示第二圖之薄膜電晶體的剖面圖。 第三B圖顯示第二圖之薄膜電晶體T的另一剖面圖。 第四圖顯示第二、三圖之薄膜電晶體的透視圖。 第五圖例示承載於接受基板的微發光二極體顯示面板畫素的俯視示意圖。

Claims (12)

  1. 一種微元件轉移系統，包含：一轉移頭，包含複數拾取電極，用以分別拾取複數微元件，且包含複數薄膜電晶體，分別相應於該些拾取電極；一轉移頭支架，用以支持該轉移頭；一薄膜電晶體驅動板，電性連接以驅動控制該些薄膜電晶體；一供給基板或接受基板，用以承載該些微元件；及一基板支架，用以支持該供給基板或接受基板；其中該轉移頭更包含一延伸部，設於該轉移頭的工作區外，該延伸部的一端鄰近該轉移頭支架，且該延伸部的另一端的底面連接該薄膜電晶體驅動板。
  2. 根據申請專利範圍第1項所述之微元件轉移系統，其中該微元件的尺寸為1~100微米。
  3. 根據申請專利範圍第1項所述之微元件轉移系統，其中該微元件包含微發光二極體。
  4. 根據申請專利範圍第1項所述之微元件轉移系統，其中該些拾取電極及該些薄膜電晶體設於該轉移頭的底面且位於工作區內。
  5. 根據申請專利範圍第1項所述之微元件轉移系統，其中該些薄膜電晶體排列為矩陣形式，以形成薄膜電晶體主動式矩陣。
  6. 一種微元件轉移系統，包含：一轉移頭，包含複數拾取電極，用以分別拾取複數微元件，且包含複數薄膜電晶體，分別相應於該些拾取電極；一轉移頭支架，用以支持該轉移頭；一薄膜電晶體驅動板，電性連接以驅動控制該些薄膜電晶體；一供給基板或接受基板，用以承載該些微元件；及一基板支架，用以支持該供給基板或接受基板；其中該薄膜電晶體驅動板包含：一掃描驅動器，連接以控制同一列的薄膜電晶體的閘極；一源極驅動器，連接以控制同一行的薄膜電晶體的源極；及一時序控制器，控制該掃描驅動器與該源極驅動器。
  7. 根據申請專利範圍第6項所述之微元件轉移系統，其中每一該薄膜電晶體的汲極相應連接至該拾取電極。
  8. 一種微元件轉移系統，包含：一轉移頭，包含複數拾取電極，用以分別拾取複數微元件，且包含複數薄膜電晶體，分別相應於該些拾取電極；一轉移頭支架，用以支持該轉移頭；一薄膜電晶體驅動板，電性連接以驅動控制該些薄膜電晶體；一供給基板或接受基板，用以承載該些微元件；及一基板支架，用以支持該供給基板或接受基板；其中該薄膜電晶體包含：一基板；一閘極導電層，形成於該基板上，作為該薄膜電晶體的閘極；一閘極絕緣層，形成於該閘極導電層與該基板上；一源極導電層與一汲極導電層，形成於該閘極絕緣層上，分別作為該薄膜電晶體的源極與汲極，該源極導電層與該汲極導電層分別與該閘極導電層的兩端重疊；一平坦化層，形成於該閘極絕緣層、該源極導電層與該汲極導電層上；一屏蔽導電層，形成於該平坦化層上；一絕緣層，形成於該屏蔽導電層上；及一拾取電極層，形成於該絕緣層上及該絕緣層與該平坦化層的穿孔內，且連接至該汲極導電層，作為該拾取電極；其中該拾取電極層穿透該絕緣層、該屏蔽導電層及該平坦化層，且不與該屏蔽導電層接觸。
  9. 根據申請專利範圍第8項所述之微元件轉移系統，其中該薄膜電晶體的基板包含玻璃基板。
  10. 根據申請專利範圍第8項所述之微元件轉移系統，其中該薄膜電晶體更包含：一覆蓋層，形成於該絕緣層與該拾取電極層上，用以保護該拾取電極。
  11. 根據申請專利範圍第10項所述之微元件轉移系統，其中該覆蓋層包含緩衝材質。
  12. 一種微元件轉移系統，包含：一轉移頭，包含複數拾取電極，用以分別拾取複數微元件，且包含複數薄膜電晶體，分別相應於該些拾取電極；一轉移頭支架，用以支持該轉移頭；一薄膜電晶體驅動板，電性連接以驅動控制該些薄膜電晶體；一供給基板或接受基板，用以承載該些微元件；及一基板支架，用以支持該供給基板或接受基板；其中該接受基板所承載的面板畫素之間距為該些拾取電極之間距的整數倍。
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