CN108630591B - 微元件转移*** - Google Patents
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Abstract
一种微元件转移***包含:转移头,包含多个拾取电极,用以分别拾取多个微元件,且包含多个薄膜晶体管,分别相应于该些拾取电极;转移头支架,用以支持转移头;薄膜晶体管驱动板,电性连接以驱动控制该些薄膜晶体管;供给基板或接受基板,用以承载该些微元件;及基板支架,用以支持供给基板或接受基板。
Description
技术领域
本发明是有关一种微元件(micro device)转移***,特别是关于一种使用薄膜晶体管(TFT)的微元件转移***。
背景技术
微发光二极管(microLED、mLED或μLED)显示面板为平板显示器(flat paneldisplay)的一种,其是由尺寸等级为1~10微米的个别精微(microscopic)发光二极管所组成。相较于传统液晶显示面板,微发光二极管显示面板具较大对比度及较快反应时间,且消耗较少功率。微发光二极管与有机发光二极管(OLED)虽然同样具有低功耗的特性,但是,微发光二极管因为使用三-五族二极管技术(例如氮化镓),因此相较于有机发光二极管具有较高的亮度(brightness)、较高的发光效能(luminous efficacy)及较长的寿命。
在制造微发光二极管显示面板时,必须吸取个别的微发光二极管并转移至显示面板。通常是使用静电(electrostatic)力、磁力或真空吸力以吸取微发光二极管。传统静电力的吸取转移设备主要使用微机电***(MicroElectroMechanical System,MEMS)技术,其具复杂架构、高成本与低良率等缺点。传统磁力的吸取转移设备也是使用微机电***技术,因此同样具复杂架构、高成本与低良率等缺点。此外,需要额外涂布磁力材料于微发光二极管,因而需要额外的制程与成本。传统真空吸力的吸取转移设备使用微真空吸嘴(micronozzle),其高度与内径的比值必须小于一临界数值,才能确保吸取能力。当微发光二极管的尺寸非常小,真空吸嘴的高度(或厚度)也需跟着变小。因此,于操作时容易造成吸取转移设备的变形而降低吸取效率,甚至造成吸取转移设备的破裂。因此,传统真空吸力的吸取转移设备不适于较小微元件的吸取。
囿于制造技术或成本的考量,传统吸取转移设备的吸取头数目无法提高,因此不适于大尺寸(例如十寸以上)微发光二极管显示面板的制程。亦即,传统吸取转移设备无法达到大量转移(mass transfer)微发光二极管的目的。
在进行微发光二极管的吸取转移时,实务上会有少量单独的微发光二极管未被正常吸取或释放。传统吸取转移设备很难或者无法单独选取吸取头以修补该些不正常位置的微发光二极管。亦即,传统吸取转移设备无法达到单独修补微发光二极管的目的。
因此亟需提出一种新颖的微元件转移***,以改善传统吸取转移设备的诸多缺失。
发明内容
鉴于上述,本发明实施例的目的之一在于提出一种微元件转移***,相较于传统吸取转移设备具简化架构及较低成本的优点。本发明实施例的微元件转移***可达到大量转移及单独修补微元件的目的。此外,本发明实施例的微元件转移***适于大尺寸面板的制程。
本发明解决其技术问题是采用以下技术方案来实现的。
根据本发明实施例,微元件转移***包含转移头、转移头支架、薄膜晶体管驱动板、供给基板或接受基板、及基板支架。转移头包含多个拾取电极,用以分别拾取多个微元件,且包含多个薄膜晶体管,分别相应于该些拾取电极。转移头支架用以支持转移头。薄膜晶体管驱动板电性连接以驱动控制该些薄膜晶体管。供给基板或接受基板用以承载该些微元件。基板支架用以支持供给基板或接受基板。
本发明解决其技术问题还可采用以下技术措施进一步实现。
所述的微元件转移***,其中该微元件的尺寸为1~100微米。
所述的微元件转移***,其中该微元件包含微发光二极管。
所述的微元件转移***,其中该些拾取电极及该些薄膜晶体管设于该转移头的底面且位于工作区内。
所述的微元件转移***,其中该转移头更包含延伸部,设于该转移头的工作区外,该延伸部的一端邻近该转移头支架,且该延伸部的另一端的底面连接该薄膜晶体管驱动板。
所述的微元件转移***,其中该些薄膜晶体管排列为矩阵形式,以形成薄膜晶体管主动式矩阵。
所述的微元件转移***,其中该薄膜晶体管驱动板包含:扫描驱动器,连接以控制同一列的薄膜晶体管的闸极;源极驱动器,连接以控制同一行的薄膜晶体管的源极;及时序控制器,控制该扫描驱动器与该源极驱动器。
所述的微元件转移***,其中每一该薄膜晶体管的汲极相应连接至该拾取电极。
所述的微元件转移***,其中该薄膜晶体管包含:基板;闸极导电层,形成于该基板上,作为该薄膜晶体管的闸极;闸极绝缘层,形成于该闸极导电层与该基板上;源极导电层与汲极导电层,形成于该闸极绝缘层上,分别作为该薄膜晶体管的源极与汲极,该源极导电层与该汲极导电层分别与该闸极导电层的两端重叠;平坦化层,形成于该闸极绝缘层、该源极导电层与该汲极导电层上;屏蔽导电层,形成于该平坦化层上;绝缘层,形成于该屏蔽导电层上;及拾取电极层,形成于该绝缘层上及该绝缘层与该平坦化层的穿孔内,且连接至该汲极导电层,作为该拾取电极;其中该拾取电极层穿透该绝缘层、该屏蔽导电层及该平坦化层,且不与该屏蔽导电层接触。
所述的微元件转移***,其中该薄膜晶体管的基板包含玻璃基板。
所述的微元件转移***,其中该薄膜晶体管更包含:覆盖层,形成于该绝缘层与该拾取电极层上,用以保护该拾取电极。
所述的微元件转移***,其中该覆盖层包含缓冲材质。
所述的微元件转移***,其中该接受基板所承载的面板画素的间距为该些拾取电极的间距的整数倍。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。
附图说明
图1显示本发明实施例的微元件转移***的侧面示意图。
图2显示图1的转移头的***方框图。
图3A显示图2的薄膜晶体管的剖面图。
图3B显示图2的薄膜晶体管T的另一剖面图。
图4显示图2、图3A及图3B的薄膜晶体管的透视图。
图5例示承载于接受基板的微发光二极管显示面板画素的俯视示意图。
【主要元件符号说明】
100:微元件转移*** 11:转移头支架
12:转移头 121:薄膜晶体管驱动板
122:延伸部 123:扫描驱动器
124:源极驱动器 125:时序控制器
126:拾取电极 13:基板支架
14:供给/接受基板 30:基板
31:闸极导电层 32:闸极绝缘层
33:源极导电层 34:汲极导电层
35:平坦化层 36:屏蔽导电层
37:绝缘层 38:拾取电极层
380:穿孔 39:覆盖层
51:微发光二极管显示面板画素 52:微发光二极管
G:闸极 S:源极
D:汲极 T:薄膜晶体管
C:电容器 P:间距
Q:间距
具体实施方式
图1显示本发明实施例的微元件(micro device)转移***100的侧面示意图。在本说明书中,微元件(未显示)的尺寸等级为1~100微米。在一实施例中,微元件是为微发光二极管(microLED),其尺寸等级为1~10微米。本实施例的微元件转移***100可适用于大尺寸(例如十寸以上)面板的制程。
在本实施例中,微元件转移***100包含转移头支架(transfer head holder)11,用以支持转移头12,使得转移头12的顶面支撑固定于转移头支架11的底面。转移头支架11的内部可包含加热器(未显示),有利于微元件的转移与接合(bonding)。转移头支架11的内部也可包含真空装置(未显示),用以吸住转移头12。
本实施例的转移头12包含多个拾取电极(pick-up electrode),设于转移头12的底面且位于工作区内(例如转移头支架11的覆盖区内),用以分别拾取多个微元件。根据本实施例的特征之一,转移头12包含多个薄膜晶体管(TFT),设于转移头12的底面,分别相应于该些拾取电极。
转移头12还包含薄膜晶体管驱动板121,电性连接以驱动控制该些薄膜晶体管。本实施例的转移头12还可包含延伸部122,其延伸而位于工作区外(例如转移头支架11的覆盖区外)。延伸部122的一端邻近转移头支架11,延伸部122的另一端的底面则连接薄膜晶体管驱动板121。
在本实施例中,微元件转移***100还包含基板支架(substrate holder)13,用以支持一供给(donor)或接受(acceptor)基板14,使得供给/接受基板14的底面支撑固定于基板支架13的顶面。借此,转移头12拾取供给基板14顶面承载的微元件,经转移后,转移头12释放(release)微元件使其接合于接受基板14的顶面。在进行拾取、转移与释放的过程当中,前述转移头12的延伸部122可作为缓冲区,以避免薄膜晶体管驱动板121与供给/接受基板14之间的碰撞。基板支架13的内部可包含加热器(未显示),用以帮助微元件的转移与接合(bonding)。基板支架13的内部也可包含真空装置(未显示),用以吸住供给/接受基板14。
图2显示图1的转移头12的***方框图。在本实施例中,转移头12包含多个薄膜晶体管T,排列为矩阵形式,因而形成薄膜晶体管主动式矩阵(TFT active matrix)。同一列的薄膜晶体管T的闸极G连接并受控于扫描驱动器123,同一行的薄膜晶体管T的源极S连接并受控于源极驱动器124。扫描驱动器123与源极驱动器124则受控于时序控制器125,其再受控于外部的控制器(未图式)。上述扫描驱动器123、源极驱动器124与时序控制器125设于薄膜晶体管驱动板121上。每一薄膜晶体管T的汲极D连接至相应电容器C。根据本实施例的另一特征,每一薄膜晶体管T的汲极D还连接至相应拾取电极126,用以分别拾取微元件。拾取电极126的间距为P。
图3A显示图2的薄膜晶体管T的剖面图。在本实施例中,薄膜晶体管T包含基板30,例如玻璃基板。闸极导电层31(例如闸极金属层)形成于基板30上,作为薄膜晶体管T的闸极G。闸极绝缘层32(例如氮化闸极层)形成于闸极导电层31与基板30上。源极导电层33(例如源极金属层)与汲极导电层34(例如汲极金属层)形成于闸极绝缘层32上,分别作为源极S与汲极D。源极导电层33、汲极导电层34分别与闸极导电层31的两端重叠。
薄膜晶体管T还包含平坦化(planarization)层35(例如有机平坦化层)形成于闸极绝缘层32、源极导电层33与汲极导电层34上。屏蔽(shielding)导电层36形成于平坦化层35上。绝缘层37形成于屏蔽导电层36上。根据本实施例的特征之一,拾取电极层38形成于绝缘层37上及绝缘层37与平坦化层35的穿孔(via)380内,且连接至汲极导电层34。拾取电极层38穿透绝缘层37、屏蔽导电层36及平坦化层35,且不与屏蔽导电层36接触。覆盖(overcoat)层39形成于绝缘层37与拾取电极层38上,用以保护拾取电极126。在一实施例中,覆盖层39可包含缓冲材质,用以缓冲供给/接受基板14表面的粒子(particle),以避免转移头12受到损害。图3A所例示的拾取电极层38填满穿透绝缘层37与平坦化层35的穿孔(via)380。图3B显示图2的薄膜晶体管T的另一剖面图。在此实施例中,拾取电极层38则是形成于穿孔380的侧壁。
图4显示图2、图3A及图3B的薄膜晶体管T的透视图。如图所示,每一薄膜晶体管T的汲极D连接相应拾取电极126,其穿透过屏蔽导电层36。上述屏蔽导电层36可避免拾取电极126受到薄膜晶体管T的驱动电压的影响而产生误吸取。在一实施例中,拾取电极126须施以足够电压,以产生静电力而吸取微元件。因此,薄膜晶体管T须为高电压晶体管,其可承受足够的电压。在另一实施例中,转移头12可同时应用磁力原理以吸取微元件,因此拾取电极126所施电压即可大幅降低,薄膜晶体管T的耐压也可降低。
图5例示承载于接受基板14的微发光二极管显示面板画素51的俯视示意图。在此例子中,共有九个微发光二极管显示面板画素51,排列为3x3矩阵。P代表微发光二极管52的间距,亦即拾取电极126的间距(图2),Q代表微发光二极管显示面板画素51的间距。在本实施例中,Q为P的整数倍。借此,时序控制器125可控制扫描驱动器123与源极驱动器124以进行选址(addressing),使得转移头12的拾取电极126得以选择性(从供给基板14)拾取微发光二极管52,再将微发光二极管52释放并接合于接受基板14的预设位置,以进行修补(repair)工作。因此,相较于传统的微元件转移***,本实施例可提高成本效益。
根据上述实施例,本实施例使用薄膜晶体管的架构、制程与驱动技术,可制造大数量的拾取电极126,以实现微元件的大量转移(mass transfer)目的,适用于大尺寸面板。由于薄膜晶体管可进行独立选址(addressing),因此本实施例也可用以进行单一或少数微元件的处理,例如微元件的修补。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (12)
1.一种微元件转移***,其特征在于,包含:
转移头,包含多个拾取电极,用以分别拾取多个微元件,且包含多个薄膜晶体管,分别相应于该些拾取电极;
转移头支架,用以支持该转移头;
薄膜晶体管驱动板,电性连接以驱动控制该些薄膜晶体管;
供给基板或接受基板,用以承载该些微元件
基板支架,用以支持该供给基板或接受基板;及
延伸部,设于该转移头的工作区外,该延伸部的一端邻近该转移头支架,且该延伸部的另一端的底面连接该薄膜晶体管驱动板。
2.根据权利要求1所述的微元件转移***,其特征在于,其中该微元件的尺寸为1~100微米。
3.根据权利要求1所述的微元件转移***,其特征在于,其中该微元件包含微发光二极管。
4.根据权利要求1所述的微元件转移***,其特征在于,其中该些拾取电极及该些薄膜晶体管设于该转移头的底面且位于工作区内。
5.根据权利要求1所述的微元件转移***,其特征在于,其中该些薄膜晶体管排列为矩阵形式,以形成薄膜晶体管主动式矩阵。
6.根据权利要求1所述的微元件转移***,其特征在于,其中该薄膜晶体管驱动板包含:
扫描驱动器,连接以控制同一列的薄膜晶体管的闸极;
源极驱动器,连接以控制同一行的薄膜晶体管的源极;及
时序控制器,控制该扫描驱动器与该源极驱动器。
7.根据权利要求1所述的微元件转移***,其特征在于,其中每一该薄膜晶体管的汲极相应连接至该拾取电极。
8.根据权利要求1所述的微元件转移***,其特征在于,其中该薄膜晶体管包含:
基板;
闸极导电层,形成于该基板上,作为该薄膜晶体管的闸极;
闸极绝缘层,形成于该闸极导电层与该基板上;
源极导电层与汲极导电层,形成于该闸极绝缘层上,分别作为该薄膜晶体管的源极与汲极,该源极导电层与该汲极导电层分别与该闸极导电层的两端重叠;
平坦化层,形成于该闸极绝缘层、该源极导电层与该汲极导电层上;
屏蔽导电层,形成于该平坦化层上;
绝缘层,形成于该屏蔽导电层上;及
拾取电极层,形成于该绝缘层上及该绝缘层与该平坦化层的穿孔内,且连接至该汲极导电层,作为该拾取电极;
其中该拾取电极层穿透该绝缘层、该屏蔽导电层及该平坦化层,且不与该屏蔽导电层接触。
9.根据权利要求8所述的微元件转移***,其特征在于,其中该薄膜晶体管的基板包含玻璃基板。
10.根据权利要求8所述的微元件转移***,其特征在于,其中该薄膜晶体管更包含:
覆盖层,形成于该绝缘层与该拾取电极层上,用以保护该拾取电极。
11.根据权利要求10所述的微元件转移***,其特征在于,其中该覆盖层包含缓冲材质。
12.根据权利要求1所述的微元件转移***,其特征在于,其中该接受基板所承载的面板画素的间距为该些拾取电极的间距的整数倍。
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