TWI616872B - Heat assisted magnetic recording medium - Google Patents
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 19
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910005335 FePt Inorganic materials 0.000 claims description 64
- 239000000956 alloy Substances 0.000 claims description 63
- 229910045601 alloy Inorganic materials 0.000 claims description 63
- 230000017525 heat dissipation Effects 0.000 claims description 11
- 229910018936 CoPd Inorganic materials 0.000 claims description 2
- 229910018979 CoPt Inorganic materials 0.000 claims description 2
- 229910015187 FePd Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 4
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- 238000004544 sputter deposition Methods 0.000 description 10
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- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
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- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 1
- 229910019586 CoZrTa Inorganic materials 0.000 description 1
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明提供一種熱輔助磁性記錄媒體，其包含一基板、一形成於該基板之上的晶種層、一形成於該晶種層上的第一中間層，及一形成於該第一中間層之上的磁性記錄層。該第一中間層含有Mg、X及O，X是選自由下列所構成之群組的元素：Cu、Co、Ni，及前述元素的組合，且該第一中間層呈導電性並具有一岩鹽結構。The present invention provides a thermally assisted magnetic recording medium comprising a substrate, a seed layer formed on the substrate, a first intermediate layer formed on the seed layer, and a first intermediate layer formed on the seed layer Magnetic recording layer above. The first intermediate layer contains Mg, X and O, and X is an element selected from the group consisting of Cu, Co, Ni, and a combination of the foregoing, and the first intermediate layer is electrically conductive and has a rock salt. structure.
Description
本發明是有關於一種磁性記錄媒體(magnetic recording media)，特別是指一種熱輔助(heat-assisted)磁性記錄媒體。The present invention relates to a magnetic recording media, and more particularly to a heat-assisted magnetic recording medium.
基於近幾十年來資訊更新的速度飛快，以致於除了磁性記錄媒體的需求量是有增無減外，提升磁性記錄媒體之儲存密度的技術更是此技術領域之相關技術人員所需持續突破的課題。在現有的磁性材料中，又以具備有正方晶相(face-centered tetragonal phase，FCT相)之鐵鉑(以下稱FePt)合金因具有高的磁晶體各異向性(magnetocrystalline anisotropy)而使磁性記錄媒體的熱穩定性提高，以有利於做為熱輔助磁性記錄媒體，而熱輔助磁性記錄媒體的寫入方法則是有利於達到超高記錄儲存密度，因而廣受業界矚目。Based on the rapid update of information in recent decades, in addition to the increasing demand for magnetic recording media, the technology for increasing the storage density of magnetic recording media is a continuing breakthrough for those skilled in the art. Question. Among the existing magnetic materials, an iron-platinum (hereinafter referred to as FePt) alloy having a face-centered tetragonal phase (FCT phase) is magnetically made by having a high magnetocrystalline anisotropy. The thermal stability of the recording medium is improved to facilitate the use as a heat-assisted magnetic recording medium, and the writing method of the heat-assisted magnetic recording medium is advantageous for achieving an ultra-high recording storage density, and thus has been widely recognized by the industry.
發明人曾於J. Appl. Phys. 117, 17C502 (2015)公開有FePtC magnetic recording media with (200) textured MoC intermediate layer一文(以下稱前案1)。前案1是透過直流磁控濺鍍法(dc magnetron sputtering)先於一空白玻璃基板上以200˚C的溫度沉積一厚度約60 nm的CrRu晶種層(seed layer)後，再以425˚C的溫度於該CrRu晶種層上依序沉積一厚度介於3 nm至25 nm間的MoC中間層，及一厚度介於4 nm至10 nm間的FePtC磁性記錄層；其中，該MoC中間層是經濺射一Mo 40C 60合金靶材所沉積而成，且該FePtC磁性記錄層則是經濺射一FePt合金靶材以利用該MoC中間層內之大於50 at%的C於該磁性記錄層的濺鍍過程中朝上擴散(diffusion)至FePt合金中所沉積取得。前案1一方面是利用該MoC中間層以提升該CrRu晶種層之(200)晶面的織構(texture)。另一方面，是利用該MoC中間層內多餘的C以在該磁性記錄層的濺鍍過程中偏析於FePt晶粒(grain)間，令該磁性記錄層中的FePt晶粒具有一(001)織構之FCT相；即，序化相(ordered phase，L1 0相)，且經微結構調控可使該FePtC磁性記錄層具備高垂直矯頑磁力(out-of-plane coercivity；Hc)。 The inventor has disclosed a FePtC magnetic recording media with (200) textured MoC intermediate layer (hereinafter referred to as the first case 1) in J. Appl. Phys. 117 , 17C502 (2015). The first case is to deposit a CrRu seed layer with a thickness of about 60 nm on a blank glass substrate by DC magnetron sputtering at a temperature of 200 ̊C, and then 425 ̊. a temperature of C sequentially deposits a MoC intermediate layer between 3 nm and 25 nm on the CrRu seed layer, and a FePtC magnetic recording layer with a thickness between 4 nm and 10 nm; wherein the MoC is intermediate The layer is deposited by sputtering a Mo 40 C 60 alloy target, and the FePtC magnetic recording layer is sputtered with a FePt alloy target to utilize greater than 50 at% of C in the MoC intermediate layer. The diffusion of the magnetic recording layer during the sputtering process is carried out by diffusion into the FePt alloy. The first case 1 utilizes the MoC intermediate layer to enhance the texture of the (200) crystal plane of the CrRu seed layer. On the other hand, the excess C in the MoC intermediate layer is used to segregate between the FePt grains during the sputtering process of the magnetic recording layer, so that the FePt grains in the magnetic recording layer have one (001). The texture of the FCT phase; that is, the ordered phase (L1 0 phase), and the microstructure control can make the FePtC magnetic recording layer have a high vertical coercivity (Hc).
此外，B. S. D. Ch. S. Varaprasad等人曾於J. Appl. Phys. 113, 203907 (2013)公開有Electrically conductive (Mg 0.2Ti 0.8)O underlayer to grow FePt-based perpendicular recording media on glass substrates一文(以下稱前案2)。前案2是先於一玻璃基板上以直流磁控濺鍍法沉積一厚度約60 nm的非晶(amorphous)NiTa層；之後，於該非晶NiTa層上以170˚C的溫度沉積一厚度約10 nm的Cr緩衝層(buffer layer)；接著，於該Cr緩衝層上以室溫沉積一厚度約10 nm的導電性MTO底層；最後，於該導電性MTO底層上以600˚C的溫度沉積一厚度約6nm的FePt-C磁性記錄層；其中，該導電性MTO底層是經濺射一Mg 0.2Ti 0.8O靶材所沉積而成，該FePt-C磁性記錄層則是經共濺鍍(co-sputtering)一Fe靶材、一Pt靶材與一C靶材所沉積而成，且該FePt-C磁性記錄層中的含C量是經由各靶材的鍍率來控制，以令其含C量是介於0~40 vol.%間。 In addition, BSD Ch. S. Varaprasad et al., J. Appl. Phys. 113 , 203907 (2013) discloses Electroically conductive (Mg 0.2 Ti 0.8 )O underlayer to grow FePt-based perpendicular recording media on glass substrates (below) Said the former case 2). In the first case, an amorphous NiTa layer having a thickness of about 60 nm is deposited by DC magnetron sputtering on a glass substrate; then, a thickness of about 170 ̊C is deposited on the amorphous NiTa layer. a 10 nm Cr buffer layer; then, a conductive MTO underlayer having a thickness of about 10 nm is deposited on the Cr buffer layer at room temperature; finally, a deposition of 600 ̊C is performed on the conductive MTO underlayer. a FePt-C magnetic recording layer having a thickness of about 6 nm; wherein the conductive MTO underlayer is deposited by sputtering a Mg 0.2 Ti 0.8 O target, and the FePt-C magnetic recording layer is co-sputtered ( Co-sputtering) a Fe target, a Pt target and a C target are deposited, and the C content in the FePt-C magnetic recording layer is controlled by the plating rate of each target to make it The amount of C contained is between 0 and 40 vol.%.
前案2主要是利用該導電性MTO底層來取代同樣具有一岩鹽結構(rock salt structure)的一MgO底層，其目的除了可利用其導電的特性以改善熱輔助磁性記錄媒體的散熱問題外。更因該導電性MTO與FePt合金間的晶格不匹配度(lattice mismatch)相對小於該MgO底層與FePt合金間的晶格不匹配度，而有利於降低導電性MTO底層與FePt合金界面間的應變(strain)並減少界面間的應變能，以藉此提升FePt合金晶粒的(001)晶面的織構。雖然前案2透過該導電性MTO底層可提升FePt合金晶粒的(001)織構。然而，前案2之MTO底層與FePt合金界面間的接觸角(contact angle)卻也因為低界面能而相對該MgO底層下降至44˚，以致於界面間因呈濕潤性(wettability)而難以令FePt合金呈長寬比(aspect ratio)大於1.5的柱狀晶(columnar grain)，此對於提升熱輔助磁性記錄媒體之儲存密度的貢獻度有限，難以符合商用化的標準。The former case 2 mainly uses the conductive MTO underlayer to replace a MgO underlayer which also has a rock salt structure, in addition to utilizing its conductive properties to improve the heat dissipation problem of the heat assisted magnetic recording medium. Moreover, the lattice mismatch between the conductive MTO and the FePt alloy is relatively smaller than the lattice mismatch between the MgO underlayer and the FePt alloy, which is beneficial to reduce the interface between the conductive MTO underlayer and the FePt alloy interface. Strain and reduce the strain energy between the interfaces to thereby enhance the texture of the (001) crystal plane of the FePt alloy grains. Although the former case 2 can improve the (001) texture of the FePt alloy grains through the conductive MTO underlayer. However, the contact angle between the MTO underlayer and the FePt alloy interface of the previous case 2 is also lowered to 44 相对 relative to the MgO underlayer due to the low interfacial energy, so that it is difficult to make the interfacial interface due to wettability. The FePt alloy exhibits a columnar grain having an aspect ratio of more than 1.5, which contributes to the improvement of the storage density of the heat-assisted magnetic recording medium, and it is difficult to meet the commercialization standard.
經上述說明可知，改良熱輔助磁性記錄媒體之結構以在維持磁性記錄層之FCT相(即，L1 0相)應有的(001)織構為前提下，使磁性記錄層之磁性材料具有柱狀晶結構以滿足商用化磁性記錄媒體的需求，是此技術領域的相關技術人員所待突破的難題。 As apparent from the above description, the structure of the improved heat-assisted magnetic recording medium is such that the magnetic material of the magnetic recording layer has a column on the premise that the (001) texture of the FCT phase (ie, L1 0 phase) of the magnetic recording layer is maintained. The crystal structure to meet the needs of commercial magnetic recording media is a problem to be solved by those skilled in the art.
因此，本發明之目的，即在提供一種能在維持磁性記錄層之L1 0相應有的(001)織構為前提下令磁性記錄層具有柱狀晶結構的熱輔助磁性記錄媒體。 Accordingly, it is an object of the present invention to provide a thermally assisted magnetic recording medium having a columnar crystal structure in the magnetic recording layer while maintaining the (001) texture corresponding to L1 0 of the magnetic recording layer.
於是，本發明熱輔助磁性記錄媒體，包含一基板、一形成於該基板之上的晶種層、一形成於該晶種層上的第一中間層，及一形成於該第一中間層之上的磁性記錄層。該第一中間層含有Mg、X及O，X是選自由下列所構成之群組的元素：Cu、Co、Ni，及前述元素的組合，且該第一中間層呈導電性並具有一岩鹽結構。Therefore, the thermally assisted magnetic recording medium of the present invention comprises a substrate, a seed layer formed on the substrate, a first intermediate layer formed on the seed layer, and a first intermediate layer formed on the first intermediate layer Magnetic recording layer on. The first intermediate layer contains Mg, X and O, and X is an element selected from the group consisting of Cu, Co, Ni, and a combination of the foregoing, and the first intermediate layer is electrically conductive and has a rock salt. structure.
本發明之功效在於：透過具導電性並呈岩鹽結構且含有Mg、O及至少含有Cu、Co或Ni之該第一中間層，減緩熱輔助磁性記錄媒體之散熱問題，並令該磁性記錄層得以因其與該第一中間層間的晶格不匹配度下降而提升該磁性記錄層(001)織構強度並改善柱狀晶結構的長寬比，從而滿足商用化磁性記錄媒體的需求。The effect of the present invention is to slow down the heat dissipation problem of the heat-assisted magnetic recording medium through the conductive and rock salt structure containing Mg, O and the first intermediate layer containing at least Cu, Co or Ni, and to make the magnetic recording layer The magnetic recording layer (001) texture strength and the aspect ratio of the columnar crystal structure can be improved due to a decrease in lattice mismatch between the first intermediate layer and the first intermediate layer, thereby satisfying the demand for a commercial magnetic recording medium.
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。 ＜發明詳細說明＞Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals. <Detailed Description of the Invention>
如圖1所示，本發明之熱輔助磁性記錄媒體的一第一實施例，包含一基板2、一形成於該基板2之上的晶種層3、一形成於該晶種層3上的第一中間層4、一形成於該第一中間層4之上的磁性記錄層5、一夾置於該基板2與該晶種層3間的散熱層(heat sink layer)6，及一夾置於該基板2與該散熱層6間的軟磁底層(soft magnetic underlayer)7。As shown in FIG. 1, a first embodiment of the thermally assisted magnetic recording medium of the present invention comprises a substrate 2, a seed layer 3 formed on the substrate 2, and a seed layer 3 formed on the seed layer 3. a first intermediate layer 4, a magnetic recording layer 5 formed on the first intermediate layer 4, a heat sink layer 6 sandwiched between the substrate 2 and the seed layer 3, and a clip A soft magnetic underlayer 7 is disposed between the substrate 2 and the heat dissipation layer 6.
較佳地，該晶種層3是由一具有(200)織構之CrRu合金所構成，並具有一介於10 nm至100 nm間的厚度。在本發明該第一實施例中，該CrRu合金內的Ru含量是低於20 at%。Preferably, the seed layer 3 is composed of a CrRu alloy having a (200) texture and having a thickness of between 10 nm and 100 nm. In the first embodiment of the invention, the Ru content in the CrRu alloy is less than 20 at%.
該第一中間層4含有Mg、X及O，X是選自由下列所構成之群組的元素：Cu、Co、Ni，及前述元素的組合，且該第一中間層4呈導電性並具有一岩鹽結構。較佳地，該第一中間層4具有一介於5 nm至40 nm間的厚度。The first intermediate layer 4 contains Mg, X and O, and X is an element selected from the group consisting of Cu, Co, Ni, and combinations of the foregoing elements, and the first intermediate layer 4 is electrically conductive and has A rock salt structure. Preferably, the first intermediate layer 4 has a thickness of between 5 nm and 40 nm.
該磁性記錄層5是選自FePt合金、CoPt合金、FePd合金，或CoPd合金，且該磁性記錄層具有一介於4 nm至20 nm間的厚度。在本發明一具體例中，該磁性記錄層5是選自FePt合金。The magnetic recording layer 5 is selected from the group consisting of FePt alloy, CoPt alloy, FePd alloy, or CoPd alloy, and the magnetic recording layer has a thickness of between 4 nm and 20 nm. In a specific example of the present invention, the magnetic recording layer 5 is selected from the group consisting of FePt alloys.
此處需特別說明的是，基於該磁性記錄層5必須經升溫擴散的程序以自面心立方相(face-centered cubic phase，FCC相)轉變成FCT相(即，序化相；L1 0相)，而FCC相與FCT相中之FePt合金的基本組成配比一般是趨近1比1。因此，為令該磁性記錄層5呈現出L1 0相，該磁性記錄層5內之鐵磁性(ferromagnetic)金屬元素(如，Fe與Co)比貴金屬元素(如，Pt與Pd)的配比關係是介於45：55至55：45間。 It should be particularly noted here that the process of the magnetic recording layer 5 must be converted from a face-centered cubic phase (FCC phase) to an FCT phase (ie, a sequenced phase; L1 0 phase). ), and the basic composition ratio of the FCC phase in the FCC phase to the FCT phase is generally close to 1:1. Therefore, in order for the magnetic recording layer 5 to exhibit an L1 0 phase, a ferromagnetic metal element (for example, Fe and Co) in the magnetic recording layer 5 is more than a noble metal element (for example, Pt and Pd). It is between 45:55 and 55:45.
較佳地，該散熱層6是由高熱傳係數(thermal conductivity)的材料所構成，如，Cu或Cu合金；該軟磁底層7是由FeTaC、CoZrNb，或CoZrTa所構成。Preferably, the heat dissipation layer 6 is composed of a material having a high thermal conductivity such as Cu or a Cu alloy; the soft magnetic underlayer 7 is composed of FeTaC, CoZrNb, or CoZrTa.
參圖2，本發明之熱輔助磁性記錄媒體的一第二實施例大致上是相同於該第一實施例，其不同處是在於，本發明該第二實施例還包含一第二中間層8。該第二中間層8是夾置於該第一中間層4與該磁性記錄層5間，且是由一具有(200)織構之MoC所構成。為使得該第二中間層8內的C得以在該磁性記錄層5之沉積過程中偏析於該磁性記錄層5之FePt合金晶粒間。因此，較佳地，該第二中間層8具有一介於0.5 nm至40 nm間的厚度。又，為使得該磁性記錄層5之FePt合金晶粒具有高長寬比且長向實質垂直於膜面方向的柱狀晶結構與(001)優選取向(preferred orientation)的織構；因此，更佳地，該第二中間層8的厚度是介於0.5 nm至20 nm間。Referring to Figure 2, a second embodiment of the thermally assisted magnetic recording medium of the present invention is substantially identical to the first embodiment, except that the second embodiment of the present invention further includes a second intermediate layer 8 . The second intermediate layer 8 is sandwiched between the first intermediate layer 4 and the magnetic recording layer 5, and is composed of a MoC having a (200) texture. In order to allow C in the second intermediate layer 8 to be segregated between the FePt alloy crystal grains of the magnetic recording layer 5 during deposition of the magnetic recording layer 5. Therefore, preferably, the second intermediate layer 8 has a thickness of between 0.5 nm and 40 nm. Further, in order to make the FePt alloy crystal grains of the magnetic recording layer 5 have a high aspect ratio and a columnar crystal structure having a long direction substantially perpendicular to the film surface direction and a (001) preferred orientation texture; therefore, more preferably The thickness of the second intermediate layer 8 is between 0.5 nm and 20 nm.
此處需特別說明的是，本發明所屬技術領域的相關技術人員應知，本發明該等實施例所述之軟磁底層7於熱輔助磁性記錄媒體中的主要功用，僅在於提供磁通量形成封閉型的迴路並提昇寫入的磁場效率，而該散熱層6之目的僅在於，供該等實施例在透過雷射熱寫錄時所產生的熱得以經由該散熱層6釋放，該散熱層6與該軟磁底層7的存在與否並不會影響本發明之磁性分析或晶體結構等分析結果。因此，在本發明以下所提之數個具體例(Examples；E)或數個比較例(Comparative Examples；CE)中的磁性分析與晶體結構等分析數據，是在未夾置有該散熱層6與該軟磁底層7的條件下分析，於此合先敘明。 ＜具體例1(E1)＞It should be specifically noted that those skilled in the art to which the present invention pertains should understand that the main function of the soft magnetic underlayer 7 in the thermally assisted magnetic recording medium of the embodiments of the present invention is to provide a magnetic flux forming closed type. The circuit improves the efficiency of the written magnetic field, and the purpose of the heat dissipation layer 6 is only that the heat generated by the embodiments for the thermal recording through the laser can be released via the heat dissipation layer 6, the heat dissipation layer 6 and The presence or absence of the soft magnetic underlayer 7 does not affect the analysis results of the magnetic analysis or crystal structure of the present invention. Therefore, in the specific examples (Examples; E) or a plurality of comparative examples (CE) of the present invention, the analysis data of the magnetic analysis and the crystal structure are such that the heat dissipation layer 6 is not interposed. The analysis under the conditions of the soft magnetic underlayer 7 will be described first. <Specific Example 1 (E1)>
本發明之熱輔助磁性記錄媒體之一具體例1(E1)大致上是相同於該第一實施例，並透過磁控濺鍍法來完成，且其製作方法是簡單地說明於下。One specific example 1 (E1) of the heat-assisted magnetic recording medium of the present invention is substantially the same as the first embodiment, and is completed by a magnetron sputtering method, and its manufacturing method is simply described below.
首先，在一約1×10 -3Torr的工作壓力(working pressure)下濺射一Cr 83Ru 17合金靶，以在161˚C的條件下於一空白玻璃基板上沉積一厚度約80 nm的CrRu晶種層。接著，濺射一Mg 0.6Co 0.4O靶材以在395˚C的條件下於該CrRu晶種層上沉積一厚度約20 nm的MgCoO第一中間層。最後，濺射一Fe 54Pt 46合金靶以在425˚C的條件下於該MgCoO第一中間層上沉積一厚度約10 nm的FePt合金磁性記錄層。 ＜比較例1(CE1)＞ First, a Cr 83 Ru 17 alloy target was sputtered at a working pressure of about 1 × 10 -3 Torr to deposit a thickness of about 80 nm on a blank glass substrate at 161 ̊C. CrRu seed layer. Next, a Mg 0.6 Co 0.4 O target was sputtered to deposit a first intermediate layer of MgCoO having a thickness of about 20 nm on the CrRu seed layer at 395 ̊C. Finally, a Fe 54 Pt 46 alloy target was sputtered to deposit a FePt alloy magnetic recording layer having a thickness of about 10 nm on the first intermediate layer of MgCoO at 425 ̊C. <Comparative Example 1 (CE1)>
本發明之熱輔助磁性記錄媒體之一比較例1(CE1)大致上是相同於具體例1(E1)，其不同處是在於，該MgCoO第一中間層是改由一MgTiO第一中間層取代，其是濺射一Mg 0.2Ti 0.8O靶材以於一CrRu晶種層上沉積該厚度約20 nm的MgTiO第一中間層。 ＜具體例2(E2)＞ One of the heat-assisted magnetic recording media of the present invention, Comparative Example 1 (CE1), is substantially the same as Concrete Example 1 (E1), except that the first intermediate layer of MgCoO is replaced by a first intermediate layer of MgTiO. It is a sputtering of a Mg 0.2 Ti 0.8 O target to deposit a first intermediate layer of MgTiO having a thickness of about 20 nm on a CrRu seed layer. <Specific example 2 (E2)>
本發明之熱輔助磁性記錄媒體之一具體例2(E2)大致上是相同於該第一實施例與該具體例1(E1)，其不同處是在於，該MgCoO第一中間層是改由一厚度約5 nm的MgCuO第一中間層取代，且於該MgCuO第一中間層與該FePt合金磁性記錄層間還夾置有一厚度約25 nm的MoC第二中間層。具體地來說，該具體例2(E2)之MgCuO第一中間層是濺射一Mg 0.2Cu 0.8O靶材以於一CrRu晶種層上沉積該MgCuO第一中間層；該具體例2(E2)之MoC第二中間層是濺射一Mo 40C 60靶材以於該MgCuO第一中間層上沉積該MoC第二中間層。 ＜具體例3(E3)＞ One specific example 2 (E2) of the heat-assisted magnetic recording medium of the present invention is substantially the same as the first embodiment and the specific example 1 (E1), except that the first intermediate layer of the MgCoO is modified by A first intermediate layer of MgCuO having a thickness of about 5 nm is substituted, and a second intermediate layer of MoC having a thickness of about 25 nm is interposed between the first intermediate layer of MgCuO and the magnetic recording layer of the FePt alloy. Specifically, the first intermediate layer of MgCuO of the specific example 2 (E2) is sputtering a Mg 0.2 Cu 0.8 O target to deposit the first intermediate layer of MgCuO on a CrRu seed layer; The second intermediate layer of MoC of E2) is a sputtering of a Mo 40 C 60 target to deposit the second intermediate layer of MoC on the first intermediate layer of the MgCuO. <Specific example 3 (E3)>
本發明之熱輔助磁性記錄媒體之一具體例3(E3)大致上是相同於該具體例2(E2)，其不同處是在於，該具體例3(E3)之MgCuO第一中間層改由一厚度約5 nm的MgCoO第一中間層取代。具體地來說，該具體例3(E3)之MgCoO第一中間層是濺射該Mg 0.6Cu 0.4O靶材以於一CrRu晶種層上沉積該MgCuO第一中間層。 ＜具體例4(E4)＞ One specific example 3 (E3) of the heat-assisted magnetic recording medium of the present invention is substantially the same as the specific example 2 (E2), except that the first intermediate layer of the MgCuO of the specific example 3 (E3) is changed by A first intermediate layer of MgCoO having a thickness of about 5 nm is substituted. Specifically, the first intermediate layer of the MgCoO of the specific example 3 (E3) is sputtering the Mg 0.6 Cu 0.4 O target to deposit the first intermediate layer of MgCuO on a CrRu seed layer. <Specific example 4 (E4)>
本發明之熱輔助磁性記錄媒體之一具體例4(E4)大致上是相同於該具體例2(E2)，其不同處是在於，該MgCuO第一中間層是改由一厚度約5 nm的MgNiO第一中間層取代。具體地來說，該具體例4(E4)之MgNiO第一中間層是濺射一Mg 0.4Cu 0.6O靶材以於一CrRu晶種層上沉積該MgNiO第一中間層。 ＜比較例2(CE2)＞ A specific example 4 (E4) of the heat-assisted magnetic recording medium of the present invention is substantially the same as the specific example 2 (E2), except that the first intermediate layer of MgCuO is changed to a thickness of about 5 nm. The first intermediate layer of MgNiO is substituted. Specifically, the first intermediate layer of MgNiO of this specific example 4 (E4) is a sputtering of a Mg 0.4 Cu 0.6 O target to deposit the first intermediate layer of MgNiO on a CrRu seed layer. <Comparative Example 2 (CE2)>
本發明之熱輔助磁性記錄媒體之一比較例2(CE2)大致上是相同於該等具體例(E2、E3、E4)，其不同處是在於，該比較例2(CE2)未包含該等第一中間層。Comparative Example 2 (CE2) of one of the heat-assisted magnetic recording media of the present invention is substantially the same as the specific examples (E2, E3, E4), except that the Comparative Example 2 (CE2) does not include such The first intermediate layer.
由圖3(a)與圖3(b)所分別顯示之該具體例1(E1)與該比較例1(CE1)的TEM截面影像可知，形成於該比較例1(CE1)之MgTiO第一中間層上的FePt合金磁性記錄層之接觸角僅約66˚；反觀該具體例1(E1)，形成於其MgCoO第一中間層上的FePt合金磁性記錄層之接觸角則高達125˚左右，有利於形成柱狀晶並提高熱穩定性且增加儲存密度。經前述分析可推估，該具體例1(E1)之FePt合金應可具有高比例(001)織構之L1 0相，從而提升其垂直異向性(perpendicular anisotropic)及垂直矯頑磁力。 It is understood from the TEM cross-sectional images of the specific example 1 (E1) and the comparative example 1 (CE1) shown in Fig. 3 (a) and Fig. 3 (b) that the MgTiO first formed in the comparative example 1 (CE1) The contact angle of the FePt alloy magnetic recording layer on the intermediate layer is only about 66 ̊; in contrast to the specific example 1 (E1), the contact angle of the FePt alloy magnetic recording layer formed on the first intermediate layer of the MgCoO is as high as about 125 Å. It is advantageous to form columnar crystals and improve thermal stability and increase storage density. It can be estimated from the foregoing analysis that the FePt alloy of the specific example 1 (E1) should have a high ratio (001) texture of the L1 0 phase, thereby enhancing its perpendicular anisotropic and vertical coercive force.
圖4顯示有該比較例2(CE2)於沉積其MoC第二中間層及其FePt合金磁性記錄層前，與該等具體例(E2、E3、E4)於沉積其第一中間層、其MoC第二中間層及其FePt磁性記錄層前之XRD圖。由圖4可知，雖然該比較例2(CE2)於趨近63˚處顯示有Cr(200)的繞射訊號峰；然而，該等具體例(E2、E3、E4)則是於趨近63˚處則是顯示有強度更高的Cr(200)的繞射訊號峰。初步證實，本發明該等具體例(E2、E3、E4)之第一中間層(即，MgCuO、MgCoO、MgNiO)在395˚C的沉積條件下可減少其CrRu晶種層的晶格應變(lattice strain)，並使其CrRu晶種層的Cr晶粒呈(200)的方位(orientation)成長。4 shows the comparative example 2 (CE2) before depositing its MoC second intermediate layer and its FePt alloy magnetic recording layer, and the specific intermediates (E2, E3, E4) for depositing its first intermediate layer, its MoC XRD pattern of the second intermediate layer and its FePt magnetic recording layer. As can be seen from FIG. 4, although Comparative Example 2 (CE2) shows a diffraction signal peak of Cr(200) near 63 ;; however, these specific examples (E2, E3, E4) are approaching 63. The crucible is a diffraction signal peak showing Cr (200) with higher intensity. It has been initially confirmed that the first intermediate layer (ie, MgCuO, MgCoO, MgNiO) of the specific examples (E2, E3, E4) of the present invention can reduce the lattice strain of the CrRu seed layer under the deposition condition of 395 ̊C ( The lattice strain) and the Cr grains of the CrRu seed layer are grown at an orientation of (200).
進一步由顯示於圖5之該比較例2(CE2)與該等具體例(E2、E3、E3)之XRD圖可知，該具體例2(E2)與具體例3(E3)之MoC第二中間層不僅顯示有明顯的(200)織構；此外，該具體例2(E2)與具體例3(E3)之FePt合金磁性記錄層亦顯示有(001)之超晶格(superlattice)訊號峰與FePt之L1 0相之(002)主要訊號峰。初步推測， 前述(001)超晶格訊號峰應是該具體例2(E2)與具體例3(E3)之FePt合金磁性記錄層具有(001)之優選方位(preferred orientation)。 Further, from the XRD patterns of the comparative example 2 (CE2) shown in FIG. 5 and the specific examples (E2, E3, and E3), the second intermediate portion of the specific example 2 (E2) and the specific example 3 (E3) MoC is known. The layer not only shows a distinct (200) texture; in addition, the FePt alloy magnetic recording layer of the specific example 2 (E2) and the specific example 3 (E3) also exhibits a (001) superlattice signal peak and The main signal peak of (002) of L1 0 phase of FePt. It is presumed that the (001) superlattice signal peak should have a preferred orientation of (001) for the FePt alloy magnetic recording layer of the specific example 2 (E2) and the specific example 3 (E3).
此外，由顯示於圖6(同時參閱附件1)之該比較例2(CE2)與該具體例2(E2)之XRD搖擺曲線圖可知，該比較例2(CE2)之FePt(001)與CrRu(200)的半高寬(FWHM，以下稱∆θ 50)分別是7.1˚與5.7˚，反觀該具體例2(E2)之FePt(001)與CrRu(200)的∆θ 50則是分別下降至6.1˚與3.8˚，相對窄於該比較例2(CE2)。證實該具體例2(E2)之FePt合金磁性記錄層的[001]c軸與CrRu晶種層的(200)織構分布較小，且其FePt合金磁性記錄層具有(001)之優選方位，該具體例2(E2)之MgCuO第一中間層可優化其磊晶品質。又，由顯示於圖7(同時參閱附件2)之該比較例2(CE2)與該具體例3(E3)之XRD搖擺曲線圖可知，該具體例3(E3)之FePt(001)與CrRu(200)的∆θ 50分別為6.7˚與4.1˚，同樣相對窄於該比較例2(CE2)。證實該具體例3(E3)之FePt合金磁性記錄層的[001]c軸與CrRu晶種層的織構分布較小，且其FePt合金磁性記錄層具有(001)之優選方位，該具體例3(E3)之MgCoO第一中間層亦可提升磊晶的品質。 Further, from the XRD rocking graph of the comparative example 2 (CE2) shown in FIG. 6 (see also Annex 1) and the specific example 2 (E2), it is known that FePt (001) and CrRu of the comparative example 2 (CE2). (200) half width (FWHM, hereinafter referred to as Δθ 50) and are 7.1˚ 5.7˚, the other hand, this specific example 2 (E2) of the FePt (001) and CrRu, (200) is decreased by Δθ 50 To 6.1 ̊ and 3.8 ̊, it is relatively narrower than Comparative Example 2 (CE2). It was confirmed that the (001) c-axis of the FePt alloy magnetic recording layer of the specific example 2 (E2) and the (200) texture distribution of the CrRu seed layer were small, and the FePt alloy magnetic recording layer had the preferred orientation of (001). The first intermediate layer of MgCuO of this specific example 2 (E2) can optimize its epitaxial quality. Further, from the XRD rocking curve of Comparative Example 2 (CE2) shown in Fig. 7 (see also Annex 2) and the specific example 3 (E3), it is known that FePt(001) and CrRu of the specific example 3 (E3) The ∆θ 50 of (200) is 6.7 ̊ and 4.1 分别, respectively, and is also relatively narrower than the comparative example 2 (CE2). It was confirmed that the [001]c-axis and the CrRu seed layer of the FePt alloy magnetic recording layer of the specific example 3 (E3) have a small texture distribution, and the FePt alloy magnetic recording layer has a preferred orientation of (001). The first intermediate layer of MgCoO of 3(E3) can also improve the quality of the epitaxial crystal.
由圖8所顯示之磁滯迴路圖可知，本發明該具體例2(E2)之垂直矯頑磁力(~7.9 kOe)雖略低於該比較例2(CE2)之8.5 kOe；然而，本發明該具體2(E2)之MgCuO第一中間層因其內部的Cu而有利於散熱。再參閱圖8，本發明該具體3(E3)則是因其MgCoO第一中間層內的Co而使其垂直矯頑磁力提升至約9.3 kOe，且其水平(in-plane)磁滯迴路呈線性狀，證實其磁性垂直異向性佳。As can be seen from the hysteresis loop diagram shown in FIG. 8, the vertical coercive force (~7.9 kOe) of the specific example 2 (E2) of the present invention is slightly lower than 8.5 kOe of the comparative example 2 (CE2); however, the present invention The specific second (E2) MgCuO first intermediate layer is advantageous for heat dissipation due to Cu inside. Referring again to FIG. 8, the specific 3 (E3) of the present invention is such that its vertical coercive force is raised to about 9.3 kOe due to Co in the first intermediate layer of MgCoO, and its level (in-plane) hysteresis loop is Linear, confirming its magnetic perpendicular anisotropy.
又，由圖8顯示可知，本發明該具體例4(E4)之垂直矯頑磁力雖下降至約6.0 kOe，且其垂直與水平磁滯迴路趨近重疊以致於其磁性垂直異向性低於該具體例2(E2)與該具體例3(E3)。然而，此處需補充說明的是，本發明該等具體例之熱輔助磁性記錄媒體一般是在趨近其磁性記錄層的居理溫度下寫錄；此外，反鐵磁氧化物CoO與NiO中，Co離子與Ni離子的磁矩是呈反鐵磁性耦合(antiferromagnetic coupling)排列，且令CoO與NiO呈順磁態(paramagnetic state)的奈耳溫度(Neel temperature)則分別為293K與523K。換句話說，該具體例4(E4)之磁性垂直異向性雖低於該等具體例(E2、E3)；然而，其MgNiO第一中間層與FePt合金磁性記錄層界面間並不會因直接地強耦合而產生較大的雜訊，其界面間的弱耦合將使得FePt的矯頑磁力提升。再者，該具體例4(E4)也因為在趨近其FePt合金磁性記錄層之居理溫度時實施寫錄的程序，以致於NiO已進入順磁態，其對於熱寫入梯度並無影響。Further, as is apparent from Fig. 8, the vertical coercive force of the specific example 4 (E4) of the present invention drops to about 6.0 kOe, and its vertical and horizontal hysteresis loops approach so that the magnetic perpendicular anisotropy is lower than that. Specific Example 2 (E2) and Specific Example 3 (E3). However, it should be additionally noted herein that the heat-assisted magnetic recording media of the specific examples of the present invention are generally written at a temperature close to the magnetic recording layer of the magnetic recording layer; in addition, the antiferromagnetic oxides CoO and NiO are The magnetic moments of Co ions and Ni ions are arranged in an antiferromagnetic coupling, and the Neel temperatures in which the CoO and NiO are in a paramagnetic state are 293K and 523K, respectively. In other words, the magnetic vertical anisotropy of the specific example 4 (E4) is lower than the specific examples (E2, E3); however, the interface between the first intermediate layer of MgNiO and the magnetic recording layer of the FePt alloy is not caused by Directly coupled strongly to generate large noise, and the weak coupling between the interfaces will increase the coercive force of FePt. Furthermore, this specific example 4 (E4) also performs a writing procedure when approaching the temperature of the FePt alloy magnetic recording layer, so that NiO has entered a paramagnetic state, which has no effect on the thermal writing gradient. .
參閱圖9所顯示之該比較例2(CE2)與該等具體例(E2、E3、E4)之TEM俯視形貌圖暨粒徑分布圖可知，該具體例3(E3)與該具體例4(E4)之FePt合金晶粒被MoC析出物及濺鍍其MoC第二中間層時之多餘的C所分隔開，並顯示有較寬的晶界(grain boundary)。此外，該比較例2(CE2)與該等具體例(E2、E2、E4)之FePt合金形成粒狀結構(granular structure)，且其平均粒徑(D avg)分別為5.6 nm、8.8 nm、8.7 nm與9.3 nm，且其粒徑分布[即，標準差(standard deviation；σ)除以平均粒徑；σ/D avg]分別為40%、11%、16%與37%。證實本發明該等具體例(E2、E2、E4)之第一中間層可降低粒徑分布，令其FePt合金晶粒的粒徑均勻性提高。有關於前述粒狀結構的相關分析，則容後說明。 Referring to the TEM top view and the particle size distribution map of the comparative example 2 (CE2) and the specific examples (E2, E3, E4) shown in FIG. 9, the specific example 3 (E3) and the specific example 4 are known. The FePt alloy grains of (E4) are separated by the excess C of the MoC precipitate and the second intermediate layer of the MoC, and exhibit a wide grain boundary. Further, the comparative example 2 (CE2) and the FePt alloys of the specific examples (E2, E2, E4) form a granular structure, and the average particle diameter (D avg ) thereof is 5.6 nm and 8.8 nm, respectively. 8.7 nm and 9.3 nm, and their particle size distribution [ie, standard deviation (σ) divided by average particle size; σ/D avg ] were 40%, 11%, 16%, and 37%, respectively. It was confirmed that the first intermediate layer of the specific examples (E2, E2, E4) of the present invention can reduce the particle size distribution and improve the particle size uniformity of the FePt alloy crystal grains. The relevant analysis of the above granular structure will be described later.
比較圖10、圖11與圖12可知，本發明該比較例2(CE2)、該具體例2(E2)與該具體例3(E3)之CrRu晶種層及其MoC第二中間層與該等具體例(E2、E3)之第一中間層皆為連續膜，且其部份FePt合金晶粒是呈內含有數個FePt合金晶粒的島狀結構(island-like structure)。前述島狀結構的相關分析，亦容後說明。此外，由圖12(d)所顯示之SAED圖可得知，本發明該具體例3(E3)除了顯示有CrRu(002)與MoC(002)繞射點外，更顯示有FePt(001)繞射點，證實其FePt合金磁性記錄層具有(001)織構之L1 0相。 10, FIG. 11, and FIG. 12, the CrRu seed layer of the comparative example 2 (CE2), the specific example 2 (E2), and the specific example 3 (E3), and the MoC second intermediate layer thereof are The first intermediate layers of the specific examples (E2, E3) are continuous films, and some of the FePt alloy grains are island-like structures containing a plurality of FePt alloy grains. The correlation analysis of the aforementioned island structure is also explained later. In addition, as can be seen from the SAED diagram shown in FIG. 12(d), the specific example 3 (E3) of the present invention shows FePt (001) in addition to the CrRu (002) and MoC (002) diffraction points. At the diffraction point, it was confirmed that the FePt alloy magnetic recording layer had the (001) texture of the L1 0 phase.
由圖13顯示可知，圖13(a)與圖13(b)顯示有該具體例3(E3)之兩個被選取的島狀結構，且前述的島狀結構內的傾斜柱狀晶(titled columnar grain)則是對應放大並顯示於圖13(c)與圖13(d)中。由圖13(c)與圖13(d)顯示可知，該具體例3(E3)之FePt合金磁性記錄層與其MoC第二中間層間互相溶合，說明其多餘的C與MoC第二中間層是朝上擴散至該FePt合金磁性記錄層以分隔其FePt合金晶粒並形成粒狀結構；即，所謂的傾斜柱狀晶。雖然形成在該具體例3(E3)之MoC第二中間層上的FePt合金磁性記錄層的接觸角僅趨近42˚；然而，該FePt合金磁性記錄層並未濕潤(dewetted)於該MoC第二中間層上，其FePt合金反而是集結成島狀結構。又，由圖13(d)所顯示之呈傾斜柱晶的FePt合金可知，其長寬比已趨近2.3，應適合進一步地供商用化的磁性記錄媒體所使用。As is apparent from Fig. 13, Fig. 13 (a) and Fig. 13 (b) show two selected island-like structures of the specific example 3 (E3), and the inclined columnar crystals in the aforementioned island-like structure (titled) Columnar grain) is correspondingly enlarged and shown in Figures 13(c) and 13(d). 13(c) and 13(d), the FePt alloy magnetic recording layer of the specific example 3 (E3) and the second intermediate layer of the MoC are mutually fused, indicating that the excess C and the second intermediate layer of the MoC are The FePt alloy magnetic recording layer is diffused upward to separate the FePt alloy crystal grains and form a granular structure; that is, a so-called slanted columnar crystal. Although the contact angle of the FePt alloy magnetic recording layer formed on the second intermediate layer of MoC of this specific example 3 (E3) approaches only 42 ̊; however, the FePt alloy magnetic recording layer is not wetted to the MoC On the second intermediate layer, the FePt alloy is instead assembled into an island structure. Further, it is understood from the FePt alloy having an inclined columnar crystal shown in Fig. 13(d) that the aspect ratio has approached 2.3, and it should be suitable for use in a commercially available magnetic recording medium.
又，由圖14(同時參閱附件3)所顯示之該具體例3(E3)之TEM之晶格影像暨IFFT影像可知，厚度5 nm的MgCoO第一中間層是具有0.214 nm之晶格間距(lattice spacing)的晶體，且其晶格常數(lattice constant)為0.428 nm。此外，圖14(b)亦可見有MoC(002)、FePt(001)與MgCoO(002)的晶格；其中，CrRu(200)/[110]、MgCoO(002)/[100]，與MoC(002)/[100]的晶格是與FePt(001)/[100]匹配，其說明了經織構之L1 0相的FePt合金磁性記錄層間的異質磊晶(heteroepitaxial)關係是結合該MgCoO第一中間層、該MoC第二中間層與該CrRu晶種層，且呈島狀結構之FePt合金磁性記錄層是源自各層間的界面能差(interface energy differences)所致。因此，此處需進一步補充說明的是，當本發明該具體例3(E3)之MoC第二中間層的厚度是自25 nm下修(如，5 nm)時，應可進一步地改變各層間的界面能差，令前述傾斜柱狀晶的長向轉變成實質垂直於膜面方向的柱狀晶，以滿足商用化磁性記錄媒體的需求。 Further, as shown in FIG. 14 (see also Annex 3), the TEM image and the IFFT image of the TEM of the specific example 3 (E3) show that the first intermediate layer of MgCoO having a thickness of 5 nm has a lattice spacing of 0.214 nm ( Lattice spacing) crystal with a lattice constant of 0.428 nm. In addition, Figure 14(b) also shows the lattice of MoC(002), FePt(001) and MgCoO(002); among them, CrRu(200)/[110], MgCoO(002)/[100], and MoC The lattice of (002)/[100] is matched with FePt(001)/[100], which illustrates that the heteroepitaxial relationship between the textured L1 0 phase FePt alloy magnetic recording layers is combined with the MgCoO. The first intermediate layer, the second intermediate layer of MoC and the CrRu seed layer, and the FePt alloy magnetic recording layer having an island structure are derived from interface energy differences between the layers. Therefore, it should be further added here that when the thickness of the second intermediate layer of the MoC of the specific example 3 (E3) of the present invention is from 25 nm (for example, 5 nm), the layers should be further changed. The interface energy is poor, and the long direction of the inclined columnar crystals is transformed into columnar crystals substantially perpendicular to the film surface direction to meet the demand of a commercial magnetic recording medium.
根據上述圖3所顯示之TEM截面影像可知，本發明該具體例1(E1)之FePt合金磁性記錄層的接觸角可因該MgCoO第一中間層而提升至125˚左右，有利於柱狀晶的形成。又，根據上述本發明該等具體例(E2、E3、E4)之XRD、XRD搖擺曲線圖、TEM俯視影像、TEM截面影像及其IFFT影像等分析數據的說明可知，本發明除了因各第一中間層而得以令其在395˚C的沉積條件下減少其與該CrRu晶種層間的晶格應變以輔助Cr晶粒呈(200)的方位成長，並令FePt合金磁性記錄層具有(001)之優選方位的L1 0相外。同時，各FePt合金磁性記錄層也可經由其MoC第二中間層、其第一中間層與其CrRu晶種層等各層間的界面能差，以令其MoC第二中間層、其第一中間層與其CrRu晶種層間的晶格是與其FePt合金的晶格一致，並令各FePt合金磁性記錄層是呈島狀結構，且島狀結構內部的FePt合金是經多餘的C與MoC分隔成長寬比趨近2.3的傾斜柱狀晶，應可供商用化之磁性記錄媒體使用。 According to the TEM cross-sectional image shown in FIG. 3 above, the contact angle of the FePt alloy magnetic recording layer of the specific example 1 (E1) of the present invention can be raised to about 125 Å by the first intermediate layer of the MgCoO, which is advantageous for the columnar crystal. Formation. Further, according to the description of the analysis data of the XRD, the XRD rocking curve diagram, the TEM plane image, the TEM section image, and the IFFT image of the specific examples (E2, E3, and E4) of the present invention, the present invention is not limited by the first The intermediate layer is such that it reduces the lattice strain between the CrRu seed layer and the CrRu seed layer under the deposition condition of 395 ̊C to assist the Cr grain to grow in azimuth of (200), and the FePt alloy magnetic recording layer has (001) The preferred orientation is outside the L1 0 phase. At the same time, each FePt alloy magnetic recording layer can also have an interface energy difference between its MoC second intermediate layer, its first intermediate layer and its CrRu seed layer, so that its MoC second intermediate layer and its first intermediate layer The lattice between the CrRu seed layer and its FePt alloy is the same as that of the FePt alloy, and the FePt alloy magnetic recording layer is island-like, and the FePt alloy inside the island structure is separated by excess C and MoC. The inclined columnar crystals approaching 2.3 should be used for commercial magnetic recording media.
綜上所述，本發明熱輔助磁性記錄媒體透過該第一中間層4與該第二中間層8可令該磁性記錄層5具有(001)織構之L1 0相，亦可令該磁性記錄層5具有長寬比趨近2.3的柱狀晶以供商用化磁性記錄媒體使用。因此，確實可達到本發明之目的。 In summary, the heat-assisted magnetic recording medium of the present invention can pass the first intermediate layer 4 and the second intermediate layer 8 to make the magnetic recording layer 5 have a (001) texture L1 0 phase, and the magnetic recording can also be made. Layer 5 has columnar crystals having an aspect ratio approaching 2.3 for use in commercial magnetic recording media. Therefore, the object of the present invention can be achieved.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and the simple equivalent changes and modifications made by the scope of the patent application and the patent specification of the present invention are It is still within the scope of the invention patent.
2‧‧‧基板
6‧‧‧散熱層
3‧‧‧晶種層
7‧‧‧軟磁底層
4‧‧‧第一中間層
8‧‧‧第二中間層
5‧‧‧磁性記錄層2‧‧‧Substrate
6‧‧‧heat layer
3‧‧‧ seed layer
7‧‧‧Soft magnetic bottom layer
4‧‧‧First intermediate layer
8‧‧‧Second intermediate layer
5‧‧‧ magnetic recording layer
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是一局部正視示意圖，說明本發明熱輔助磁性記錄媒體的一第一實施例； 圖2是一局部正視示意圖，說明本發明熱輔助磁性記錄媒體的一第二實施例； 圖3是一穿透式電子顯微鏡(transmission electron microscope；以下稱TEM)截面影像，說明本發明熱輔助磁性記錄媒體之一具體例1(E1)與一比較例1(CE1)之截面的膜層結構； 圖4是一X光射線 (X-ray diffraction，以下稱XRD)圖，說明本發明熱輔助磁性記錄媒體之一比較例2(CE2)、一具體例2(E2)、一具體例3(E3)與一具體例4(E4)之一晶種層及其一第一中間層間的磊晶關係； 圖5是一XRD圖，說明本發明該比較例2(CE2)與該等具體例(E2、E3、E4)之晶種層、第一中間層、一第二中間層與一磁性記錄層間的磊晶關係； 圖6是一XRD搖擺曲線(rocking curve)圖，說明本發明該比較例2(CE2)與該具體例2(E2)之晶種層與磁性記錄層的磊晶品質； 圖7是一XRD搖擺曲線圖，說明本發明該比較例2(CE2)與該具體例3(E3)之晶種層與磁性記錄層的磊晶品質； 圖8是一磁滯迴路(magnetic hysteresis loop)圖，說明本發明該比較例2(CE2)與該等具體例(E2、E3、E4)之磁性質； 圖9是一TEM俯視形貌圖暨粒徑(grain size)分布圖，說明本發明該比較例2(CE2)與該等具體例(E2、E3、E4)之FePt合金的粒徑分布； 圖10是本發明該比較例2(CE2)之一TEM截面影像； 圖11是本發明該具體例2(E2)之一TEM截面影像； 圖12是一TEM截面影像暨其選區電子繞射圖(selected area electron diffraction patterns；以下稱SAED圖)，說明本發明該具體例3(E3)之晶體結構； 圖13是圖12所顯示之TEM截面影像的一放大影像；及 圖14是一TEM之晶格影像(lattice image)暨快速傅立葉逆轉換(inverse fast Fourier transform；以下稱IFFT)影像。Other features and advantages of the present invention will be apparent from the embodiments of the present invention, wherein: Figure 1 is a partial front elevational view showing a first embodiment of the thermally assisted magnetic recording medium of the present invention; A partial front elevational view illustrating a second embodiment of the thermally assisted magnetic recording medium of the present invention; and FIG. 3 is a cross-sectional image of a transmission electron microscope (hereinafter referred to as TEM) illustrating the thermally assisted magnetic recording medium of the present invention. A film layer structure of a cross section of a specific example 1 (E1) and a comparative example 1 (CE1); FIG. 4 is an X-ray diffraction (hereinafter referred to as XRD) diagram illustrating the heat assisted magnetic recording medium of the present invention. An epitaxial relationship between a seed layer of a comparative example 2 (CE2), a specific example 2 (E2), a specific example 3 (E3), and a specific example 4 (E4) and a first intermediate layer thereof; Is an XRD pattern illustrating the epitaxy between the seed layer of the comparative example 2 (CE2) and the specific examples (E2, E3, E4), the first intermediate layer, a second intermediate layer and a magnetic recording layer. Figure 6 is an XRD rocking curve diagram illustrating the invention Comparative Example 2 (CE2) and the epitaxial quality of the seed layer and the magnetic recording layer of the specific example 2 (E2); FIG. 7 is an XRD rocking curve diagram illustrating the comparative example 2 (CE2) of the present invention and the specific example 3 (E3) seed layer and epitaxial quality of the magnetic recording layer; FIG. 8 is a magnetic hysteresis loop diagram illustrating the comparative example 2 (CE2) of the present invention and the specific examples (E2, E3) Figure 9 is a TEM top view and grain size distribution diagram illustrating the comparative example 2 (CE2) of the present invention and the FePt of the specific examples (E2, E3, E4) FIG. 10 is a TEM cross-sectional image of the comparative example 2 (CE2) of the present invention; FIG. 11 is a TEM cross-sectional image of the specific example 2 (E2) of the present invention; FIG. 12 is a TEM cross-sectional image. The selected area electron diffraction patterns (hereinafter referred to as SAED patterns) illustrate the crystal structure of the specific example 3 (E3) of the present invention; FIG. 13 is an enlarged image of the TEM cross-sectional image shown in FIG. 12; 14 is a TEM lattice image and an inverse fast Fourier transform (hereinafter referred to as IFFT) image.
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