TWI613840B - 發光裝置 - Google Patents

發光裝置 Download PDF

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TWI613840B
TWI613840B TW102121689A TW102121689A TWI613840B TW I613840 B TWI613840 B TW I613840B TW 102121689 A TW102121689 A TW 102121689A TW 102121689 A TW102121689 A TW 102121689A TW I613840 B TWI613840 B TW I613840B
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陳昭興
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晶元光電股份有限公司
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Abstract

一種製造發光裝置的方法包含形成一第一光學元件於一第一載體之上，其中第一光學元件具有一開口；形成一發光元件於開口中；形成一第二載體於第一光學元件之上；在形成第二載體於第一光學元件之上後，移除第一載體；以及形成一導電結構於第一光學元件之下。

Description

發光裝置
本發明關於一種發光裝置，特別是關於一種具有多個光學元件之發光元件。
光電裝置，例如發光二極體(Light-emitting Diode；LED)封裝，目前已經廣泛地使用在光學顯示裝置、交通號誌、資料儲存裝置、通訊裝置、照明裝置與醫療器材上。上述之LED可與其他元件組合連接以形成一發光裝置。第1圖為習知之發光裝置結構示意圖，如第1圖所示，一發光裝置1包含具有一電路14之一次載體(submount)12；一焊料16(solder)位於上述次載體12上，藉由此焊料16將LED 11固定於次載體12上並使LED 11與次載體12上之電路14形成電連接；以及一電性連接結構18，以電性連接LED 11之電極15與次載體12上之電路14；其中，上述之次載體12可以是導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate)。與商業電子產品走向輕薄短小的趨勢類似，光電裝置的發展也進入微封裝的時代，半導體與光電元件具有前景的封裝設計是晶粒級封裝。
一種製造發光裝置的方法包含形成一第一光學元件 於一第一載體之上，其中第一光學元件具有一開口；形成一發光元件於開口中；形成一第二載體於第一光學元件之上；在形成第二載體於第一光學元件之上後，移除第一載體；以及形成一導電結構於第一光學元件之下。
1、2、3、4、5‧‧‧發光裝置
11‧‧‧LED
12‧‧‧次載體
13‧‧‧基板
14‧‧‧電路
15‧‧‧電極
16‧‧‧焊料
18‧‧‧電性連接結構
20‧‧‧第一載體
21‧‧‧黏結層
22‧‧‧第一光學元件
222‧‧‧開口
23‧‧‧第二載體
24‧‧‧發光元件
25‧‧‧導電結構
26、52‧‧‧波長轉換層
28、30、40‧‧‧第二光學元件
50‧‧‧電子元件
6‧‧‧光源產生裝置
61‧‧‧光源
62‧‧‧電源供應系統
63‧‧‧控制元件
7‧‧‧背光模組
71‧‧‧光學元件
第1圖為習知發光裝置之剖面示意圖。
第2A~2D圖繪示本申請案一實施例之發光裝置之製造流程圖。
第3圖繪示本申請案另一實施例之發光裝置之剖面示意圖。
第4圖繪示本申請案另一實施例之發光裝置之剖面示意圖。
第5圖繪示本申請案另一實施例之發光裝置之剖面示意圖。
第6圖繪示本申請案一實施例之光源產生裝置之示意圖。
第7圖繪示本申請案一實施例之背光模組之示意圖。
本發明之實施例會被詳細地描述，並且繪製於圖式中，相同或類似的部分會以相同的號碼在各圖式以及說明出現。
第2A~2D圖繪示本申請案一實施例之發光裝置之製造流程圖。如第2A圖所示，一第一光學元件22形成於一第一載體20之上，具有一開口222曝露第一載體20。一發光元件24形成第一載體20之曝露部分，一波長轉換層26形成於發光元件24之上，如第2B圖所示。另一實施例中，一電子元件(未顯示)亦可形成於第一載體20之上。如第2C圖所示，一第二光學元件28形 成於波長轉換層26之上。一黏結層21形成於一第二載體23之下，且/或形成於第一光學元件22和第二光學元件28之上。第二載體23經由一黏結製程黏結於第二光學元件28，然後移除第一載體20。一導電結構25形成於第一光學元件22與發光元件24之下以形成發光裝置2，其中導電結構25電連接於發光元件24。
第一載體20及/或第二載體23支撐第一光學元件22、第二光學元件28與發光元件24。第一載體20及/或第二載體23具有導電材料，例如類鑽碳薄膜(Diamond Like Carbon；DLC)、金屬基複合材料(Metal Matrix Composite；MMC)、陶瓷基複合材料(Ceramic Matrix Composite；CMC)、銅(Cu)、鋁(Al)、矽(Si)、鉬(Mo)、錫(Sn)、鋅(Zn)、鎘(Cd)、鎳(Ni)、鈷(Co)、金合金、碳化矽(SiC)、磷化鎵(GaP)、磷砷化鎵(GaAsP)、磷化銦(InP)、鎵酸鋰(LiGaO2)或鋁酸鋰(LiAlO2)；或絕緣材料，例如為高分子複合材料(Polymer Matrix Composite)、鑽石(Diamond)、玻璃(Glass)、聚合物(Polymer)、環氧樹酯(Epoxy)、石英(Quartz)、壓克力(Acryl)、氧化鋁(Al2O3)、氧化鋅(ZnO)、氮化鋁(AlN)或上述材料之組合。
第一光學元件22/或第二光學元件28可引導或摘出發光元件24所發之光至外部環境以提升發光裝置2之光摘出效率。第一光學元件22/或第二光學元件28之材料可為透明材料，例如環氧樹脂(Epoxy)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、Su8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化鋁(Al2O3)、SINR、旋塗玻璃(SOG)或上述材料之組合。另一實施例中，第一光學元件22可為反射鏡， 其材料包含金屬材料，例如銅(Cu)、鋁(Al)、錫(Sn)、金(Au)、銀(Ag)、鎳(Ni)、鈦(Ti)、金合金(Au alloy)或上述材料之組合。另一實施例中，一反射層可形成於第一光學元件22之表面以反射發光元件24所產生之光，反射層之材料可與上述之金屬材料相同。發光元件24所發之光可被第一光學元件22反射以提升發光裝置2之光摘出效率。由剖面觀之，第二光學元件28之形狀包含但不限於三角形、半圓形、四分之一圓形、倒梯形、五角形或四邊形。另一實施例中，一封裝體可形成於第二光學元件28與發光元件24之中以提升發光裝置2之光摘出效率。
發光元件24可為發光二極體(LED)或有機發光二極體(Organic LED；OLED)，發出具有一第一波長之一第一光線。波長轉換層26可吸收第一光線並產生具有一第二波長之一第二光線，其中第二波長與第一波長相異。波長轉換層26之材料可為螢光粉，例如釔鋁石榴石(YAG)、矽酸鹽、釩酸鹽、鹼土金屬矽酸鹽、鹼土金屬硫化物、鹼土金屬硒化物、鹼土金屬鎵硫化物、金屬氮化物、金屬氮氧化物、鎢鉬酸鹽族混合物、氧化物混合物、玻璃螢光粉混合物或上述材料之組合；或半導體材料，其具有一種以上之元素選自鎵(Ga)、鋁(Al)、銦(In)、磷(P)、氮(N)、鋅(Zn)、鎘(Cd)與硒(Se)所構成之群組。波長轉換層26可置於發光元件24之上，或沿發光元件24之輪廓而形成。
黏結層21可黏著地連接第一光學元件22及/或第二光學元件28與第二載體23，黏結層21之材料可為透明材料，例如為聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、氧化鎂(MgO)、Su8、環氧樹脂(Epoxy)、丙烯酸樹脂(Acrylic Resin)、環烯烴聚合物(COC)、聚甲基丙烯酸甲酯(PMMA)、 聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化鋁(Al2O3)、氧化矽(SiOx)、氧化鈦(TiO2)、氮化矽(SiNx)或旋塗玻璃(SOG)等等。黏結層21亦可為UV膠或發泡膠。
導電結構25用以接受外部電壓，可由透明導電材料及/或金屬材料所構成。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鋅(ZnO)、類鑽碳薄膜(DLC)或氧化鎵鋅(GZO)等等。金屬材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鎢(W)、鈹(Be)或金合金等等。導電結構25之下表面面積大於發光元件24之下表面面積，至少可為發光元件24下表面面積之兩倍。導電結構25可有效地傳導發光元件24所產生之熱以提升效率。另一實施例中，一光學層(未顯示)可形成於發光元件24與導電結構25之間。光學層可反射及散射發光元件產生之光，以提升發光裝置2之光摘出效率。光學層之材料包含但不限於環氧樹酯(Epoxy)、氧化矽(SiOx)、氧化鋁(Al2O3)、二氧化鈦(TiO2)、矽膠(Silicone)、樹脂(Resin)或上述材料之組合。又一實施例中，一反射層可形成於發光單元24與導電結構25之間，反射發光單元24所發之光。反射層之材料可與上述金屬材料相同。發光單元24所發之光可被反射層反射以提升發光裝置2之光摘出效率。
第3圖繪示另一實施例，一發光裝置3與發光裝置2類似，發光裝置3更具有一第二光學元件30。自剖面觀之，第 二光學元件30之上表面與第一光學元件22之上表面等高。由於第二光學元件30之上表面係平面，所以有利於黏結製程並能強化發光裝置3之結構。第4圖繪示另一實施例，一發光裝置4與發光裝置2類似，發光裝置4更具有一第二光學元件40。自剖面觀之，第二光學元件40之上表面低於第一光學元件22之上表面，因此其他光學元件可易於形成於第二光學元件40之上，依應用以調整光場。
如第5圖所示，一發光裝置5與發光裝置2類似，發光裝置5更具有一電子元件50，例如為整流器、保護元件、電容或電阻等等，具有多種功能之電子元件50可依應用的需求控制發光元件24之電流。電子元件50可於上述形成發光元件24之製程中形成於發光裝置2之中。更佳為電子單元50與發光元件24之數量大於2，因此製程步驟可減少，成本可降低。電子單元50與發光元件24可經由導電結構25電連接。發光裝置5更具有一波長轉換層52為於第二光學元件28之上。
第6圖係繪示出一光源產生裝置示意圖，一光源產生裝置6包含本發明任一實施例中之發光裝置。光源產生裝置6可以是一照明裝置，例如路燈、車燈或室內照明光源，也可以是交通號誌或一平面顯示器中背光模組的一背光光源。光源產生裝置6具有前述發光裝置組成之一光源61、一電源供應系統62以供應光源61一電流、以及一控制元件63，用以控制電源供應系統62。
第7圖係繪示出一背光模組剖面示意圖，一背光模組7包含前述實施例中的光源產生裝置6，以及一光學元件71。光學元件71可將由光源產生裝置6發出的光加以處理，以應用於 平面顯示器，例如散射光源產生裝置6發出的光。
惟上述實施例僅為例示性說明本申請案之原理及其功效，而非用於限制本申請案。任何本申請案所屬技術領域中具有通常知識者均可在不違背本申請案之技術原理及精神的情況下，對上述實施例進行修改及變化。因此本申請案之權利保護範圍如後述之申請專利範圍所列。
2‧‧‧發光裝置
22‧‧‧第一光學元件
222‧‧‧開口
24‧‧‧發光元件
25‧‧‧導電結構
26‧‧‧波長轉換層
28‧‧‧第二光學元件

Claims (10)

  1. 一製造發光裝置之方法，包含：形成一第一光學元件於一第一載體之上，其中該第一光學元件包含一開口；形成一發光元件於該開口中；形成一第二光學元件於該發光元件之上；於該發光元件形成於該開口中之後，形成一第二載體於該第一光學元件與該第二光學元件之上；在形成該第二載體於該第一光學元件與該第二光學元件之上後，移除該第一載體；以及形成一導電結構於該第一光學元件之下。
  2. 如請求項第1項所述之方法，更包含形成一波長轉換層於該發光元件之上。
  3. 如請求項第1項所述之方法，更包含形成一黏結層於該第二載體與該第二光學元件之間。
  4. 如請求項第1項所述之方法，更包含形成一反射層於該第一光學元件之一表面。
  5. 如請求項第1項所述之方法，更包含形成一光學層位於該發光元件與該導電結構之間。
  6. 如請求項第1項所述之方法，更包含形成一電子元件於該開口之中，控制該發光元件之電流。
  7. 如請求項第6項所述之方法，其中該電子元件係選自由整流器、保護元件、電容與電阻所構成之組合。
  8. 如請求項第1項所述之方法，其中該第二光學元件遠離該發光元件的表面為一曲面或一平面。
  9. 如請求項第1項所述之方法，更包含形成一波長轉換層於該第二光學元件之上。
  10. 如請求項第8項所述之方法，其中該第二光學元件之上表面低於該第一光學元件之上表面或該第二光學元件之上表面與該第一光學元件之上表面等高。
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