TWI613840B - 發光裝置 - Google Patents
發光裝置 Download PDFInfo
- Publication number
- TWI613840B TWI613840B TW102121689A TW102121689A TWI613840B TW I613840 B TWI613840 B TW I613840B TW 102121689 A TW102121689 A TW 102121689A TW 102121689 A TW102121689 A TW 102121689A TW I613840 B TWI613840 B TW I613840B
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- Taiwan
- Prior art keywords
- light
- optical
- forming
- carrier
- component
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 6
- -1 Acryl Chemical group 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910001020 Au alloy Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 4
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000003353 gold alloy Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001601 polyetherimide Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011153 ceramic matrix composite Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229920006328 Styrofoam Polymers 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000009462 micro packaging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920013657 polymer matrix composite Polymers 0.000 description 1
- 239000011160 polymer matrix composite Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000008261 styrofoam Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
一種製造發光裝置的方法包含形成一第一光學元件於一第一載體之上,其中第一光學元件具有一開口;形成一發光元件於開口中;形成一第二載體於第一光學元件之上;在形成第二載體於第一光學元件之上後,移除第一載體;以及形成一導電結構於第一光學元件之下。
Description
本發明關於一種發光裝置,特別是關於一種具有多個光學元件之發光元件。
光電裝置,例如發光二極體(Light-emitting Diode;LED)封裝,目前已經廣泛地使用在光學顯示裝置、交通號誌、資料儲存裝置、通訊裝置、照明裝置與醫療器材上。上述之LED可與其他元件組合連接以形成一發光裝置。第1圖為習知之發光裝置結構示意圖,如第1圖所示,一發光裝置1包含具有一電路14之一次載體(submount)12;一焊料16(solder)位於上述次載體12上,藉由此焊料16將LED 11固定於次載體12上並使LED 11與次載體12上之電路14形成電連接;以及一電性連接結構18,以電性連接LED 11之電極15與次載體12上之電路14;其中,上述之次載體12可以是導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate)。與商業電子產品走向輕薄短小的趨勢類似,光電裝置的發展也進入微封裝的時代,半導體與光電元件具有前景的封裝設計是晶粒級封裝。
一種製造發光裝置的方法包含形成一第一光學元件
於一第一載體之上,其中第一光學元件具有一開口;形成一發光元件於開口中;形成一第二載體於第一光學元件之上;在形成第二載體於第一光學元件之上後,移除第一載體;以及形成一導電結構於第一光學元件之下。
1、2、3、4、5‧‧‧發光裝置
11‧‧‧LED
12‧‧‧次載體
13‧‧‧基板
14‧‧‧電路
15‧‧‧電極
16‧‧‧焊料
18‧‧‧電性連接結構
20‧‧‧第一載體
21‧‧‧黏結層
22‧‧‧第一光學元件
222‧‧‧開口
23‧‧‧第二載體
24‧‧‧發光元件
25‧‧‧導電結構
26、52‧‧‧波長轉換層
28、30、40‧‧‧第二光學元件
50‧‧‧電子元件
6‧‧‧光源產生裝置
61‧‧‧光源
62‧‧‧電源供應系統
63‧‧‧控制元件
7‧‧‧背光模組
71‧‧‧光學元件
第1圖為習知發光裝置之剖面示意圖。
第2A~2D圖繪示本申請案一實施例之發光裝置之製造流程圖。
第3圖繪示本申請案另一實施例之發光裝置之剖面示意圖。
第4圖繪示本申請案另一實施例之發光裝置之剖面示意圖。
第5圖繪示本申請案另一實施例之發光裝置之剖面示意圖。
第6圖繪示本申請案一實施例之光源產生裝置之示意圖。
第7圖繪示本申請案一實施例之背光模組之示意圖。
本發明之實施例會被詳細地描述,並且繪製於圖式中,相同或類似的部分會以相同的號碼在各圖式以及說明出現。
第2A~2D圖繪示本申請案一實施例之發光裝置之製造流程圖。如第2A圖所示,一第一光學元件22形成於一第一載體20之上,具有一開口222曝露第一載體20。一發光元件24形成第一載體20之曝露部分,一波長轉換層26形成於發光元件24之上,如第2B圖所示。另一實施例中,一電子元件(未顯示)亦可形成於第一載體20之上。如第2C圖所示,一第二光學元件28形
成於波長轉換層26之上。一黏結層21形成於一第二載體23之下,且/或形成於第一光學元件22和第二光學元件28之上。第二載體23經由一黏結製程黏結於第二光學元件28,然後移除第一載體20。一導電結構25形成於第一光學元件22與發光元件24之下以形成發光裝置2,其中導電結構25電連接於發光元件24。
第一載體20及/或第二載體23支撐第一光學元件22、第二光學元件28與發光元件24。第一載體20及/或第二載體23具有導電材料,例如類鑽碳薄膜(Diamond Like Carbon;DLC)、金屬基複合材料(Metal Matrix Composite;MMC)、陶瓷基複合材料(Ceramic Matrix Composite;CMC)、銅(Cu)、鋁(Al)、矽(Si)、鉬(Mo)、錫(Sn)、鋅(Zn)、鎘(Cd)、鎳(Ni)、鈷(Co)、金合金、碳化矽(SiC)、磷化鎵(GaP)、磷砷化鎵(GaAsP)、磷化銦(InP)、鎵酸鋰(LiGaO2)或鋁酸鋰(LiAlO2);或絕緣材料,例如為高分子複合材料(Polymer Matrix Composite)、鑽石(Diamond)、玻璃(Glass)、聚合物(Polymer)、環氧樹酯(Epoxy)、石英(Quartz)、壓克力(Acryl)、氧化鋁(Al2O3)、氧化鋅(ZnO)、氮化鋁(AlN)或上述材料之組合。
第一光學元件22/或第二光學元件28可引導或摘出發光元件24所發之光至外部環境以提升發光裝置2之光摘出效率。第一光學元件22/或第二光學元件28之材料可為透明材料,例如環氧樹脂(Epoxy)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、Su8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化鋁(Al2O3)、SINR、旋塗玻璃(SOG)或上述材料之組合。另一實施例中,第一光學元件22可為反射鏡,
其材料包含金屬材料,例如銅(Cu)、鋁(Al)、錫(Sn)、金(Au)、銀(Ag)、鎳(Ni)、鈦(Ti)、金合金(Au alloy)或上述材料之組合。另一實施例中,一反射層可形成於第一光學元件22之表面以反射發光元件24所產生之光,反射層之材料可與上述之金屬材料相同。發光元件24所發之光可被第一光學元件22反射以提升發光裝置2之光摘出效率。由剖面觀之,第二光學元件28之形狀包含但不限於三角形、半圓形、四分之一圓形、倒梯形、五角形或四邊形。另一實施例中,一封裝體可形成於第二光學元件28與發光元件24之中以提升發光裝置2之光摘出效率。
發光元件24可為發光二極體(LED)或有機發光二極體(Organic LED;OLED),發出具有一第一波長之一第一光線。波長轉換層26可吸收第一光線並產生具有一第二波長之一第二光線,其中第二波長與第一波長相異。波長轉換層26之材料可為螢光粉,例如釔鋁石榴石(YAG)、矽酸鹽、釩酸鹽、鹼土金屬矽酸鹽、鹼土金屬硫化物、鹼土金屬硒化物、鹼土金屬鎵硫化物、金屬氮化物、金屬氮氧化物、鎢鉬酸鹽族混合物、氧化物混合物、玻璃螢光粉混合物或上述材料之組合;或半導體材料,其具有一種以上之元素選自鎵(Ga)、鋁(Al)、銦(In)、磷(P)、氮(N)、鋅(Zn)、鎘(Cd)與硒(Se)所構成之群組。波長轉換層26可置於發光元件24之上,或沿發光元件24之輪廓而形成。
黏結層21可黏著地連接第一光學元件22及/或第二光學元件28與第二載體23,黏結層21之材料可為透明材料,例如為聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、氧化鎂(MgO)、Su8、環氧樹脂(Epoxy)、丙烯酸樹脂(Acrylic Resin)、環烯烴聚合物(COC)、聚甲基丙烯酸甲酯(PMMA)、
聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化鋁(Al2O3)、氧化矽(SiOx)、氧化鈦(TiO2)、氮化矽(SiNx)或旋塗玻璃(SOG)等等。黏結層21亦可為UV膠或發泡膠。
導電結構25用以接受外部電壓,可由透明導電材料及/或金屬材料所構成。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鋅(ZnO)、類鑽碳薄膜(DLC)或氧化鎵鋅(GZO)等等。金屬材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鎢(W)、鈹(Be)或金合金等等。導電結構25之下表面面積大於發光元件24之下表面面積,至少可為發光元件24下表面面積之兩倍。導電結構25可有效地傳導發光元件24所產生之熱以提升效率。另一實施例中,一光學層(未顯示)可形成於發光元件24與導電結構25之間。光學層可反射及散射發光元件產生之光,以提升發光裝置2之光摘出效率。光學層之材料包含但不限於環氧樹酯(Epoxy)、氧化矽(SiOx)、氧化鋁(Al2O3)、二氧化鈦(TiO2)、矽膠(Silicone)、樹脂(Resin)或上述材料之組合。又一實施例中,一反射層可形成於發光單元24與導電結構25之間,反射發光單元24所發之光。反射層之材料可與上述金屬材料相同。發光單元24所發之光可被反射層反射以提升發光裝置2之光摘出效率。
第3圖繪示另一實施例,一發光裝置3與發光裝置2類似,發光裝置3更具有一第二光學元件30。自剖面觀之,第
二光學元件30之上表面與第一光學元件22之上表面等高。由於第二光學元件30之上表面係平面,所以有利於黏結製程並能強化發光裝置3之結構。第4圖繪示另一實施例,一發光裝置4與發光裝置2類似,發光裝置4更具有一第二光學元件40。自剖面觀之,第二光學元件40之上表面低於第一光學元件22之上表面,因此其他光學元件可易於形成於第二光學元件40之上,依應用以調整光場。
如第5圖所示,一發光裝置5與發光裝置2類似,發光裝置5更具有一電子元件50,例如為整流器、保護元件、電容或電阻等等,具有多種功能之電子元件50可依應用的需求控制發光元件24之電流。電子元件50可於上述形成發光元件24之製程中形成於發光裝置2之中。更佳為電子單元50與發光元件24之數量大於2,因此製程步驟可減少,成本可降低。電子單元50與發光元件24可經由導電結構25電連接。發光裝置5更具有一波長轉換層52為於第二光學元件28之上。
第6圖係繪示出一光源產生裝置示意圖,一光源產生裝置6包含本發明任一實施例中之發光裝置。光源產生裝置6可以是一照明裝置,例如路燈、車燈或室內照明光源,也可以是交通號誌或一平面顯示器中背光模組的一背光光源。光源產生裝置6具有前述發光裝置組成之一光源61、一電源供應系統62以供應光源61一電流、以及一控制元件63,用以控制電源供應系統62。
第7圖係繪示出一背光模組剖面示意圖,一背光模組7包含前述實施例中的光源產生裝置6,以及一光學元件71。光學元件71可將由光源產生裝置6發出的光加以處理,以應用於
平面顯示器,例如散射光源產生裝置6發出的光。
惟上述實施例僅為例示性說明本申請案之原理及其功效,而非用於限制本申請案。任何本申請案所屬技術領域中具有通常知識者均可在不違背本申請案之技術原理及精神的情況下,對上述實施例進行修改及變化。因此本申請案之權利保護範圍如後述之申請專利範圍所列。
2‧‧‧發光裝置
22‧‧‧第一光學元件
222‧‧‧開口
24‧‧‧發光元件
25‧‧‧導電結構
26‧‧‧波長轉換層
28‧‧‧第二光學元件
Claims (10)
- 一製造發光裝置之方法,包含:形成一第一光學元件於一第一載體之上,其中該第一光學元件包含一開口;形成一發光元件於該開口中;形成一第二光學元件於該發光元件之上;於該發光元件形成於該開口中之後,形成一第二載體於該第一光學元件與該第二光學元件之上;在形成該第二載體於該第一光學元件與該第二光學元件之上後,移除該第一載體;以及形成一導電結構於該第一光學元件之下。
- 如請求項第1項所述之方法,更包含形成一波長轉換層於該發光元件之上。
- 如請求項第1項所述之方法,更包含形成一黏結層於該第二載體與該第二光學元件之間。
- 如請求項第1項所述之方法,更包含形成一反射層於該第一光學元件之一表面。
- 如請求項第1項所述之方法,更包含形成一光學層位於該發光元件與該導電結構之間。
- 如請求項第1項所述之方法,更包含形成一電子元件於該開口之中,控制該發光元件之電流。
- 如請求項第6項所述之方法,其中該電子元件係選自由整流器、保護元件、電容與電阻所構成之組合。
- 如請求項第1項所述之方法,其中該第二光學元件遠離該發光元件的表面為一曲面或一平面。
- 如請求項第1項所述之方法,更包含形成一波長轉換層於該第二光學元件之上。
- 如請求項第8項所述之方法,其中該第二光學元件之上表面低於該第一光學元件之上表面或該第二光學元件之上表面與該第一光學元件之上表面等高。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10811578B1 (en) | 2019-03-27 | 2020-10-20 | Lextar Electronics Corporation | LED carrier and LED package having the same |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
CN110265530B (zh) * | 2014-01-29 | 2023-03-21 | 亮锐控股有限公司 | 填充有密封剂的用于磷光体转换led的浅反射器杯 |
US9601670B2 (en) * | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
DE102014112818A1 (de) * | 2014-09-05 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
CN105576107B (zh) * | 2014-10-09 | 2018-02-13 | 广东德豪润达电气股份有限公司 | Led封装结构及其封装方法 |
KR20160059706A (ko) | 2014-11-19 | 2016-05-27 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 패키지를 포함하는 조명 장치 |
CN111883635B (zh) * | 2015-12-30 | 2023-06-30 | 晶元光电股份有限公司 | 发光装置以及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060157722A1 (en) * | 2004-12-03 | 2006-07-20 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US20080081400A1 (en) * | 2003-03-06 | 2008-04-03 | Sony Corporation | Device transfer method and display apparatus |
TW201029145A (en) * | 2009-01-20 | 2010-08-01 | Epistar Corp | Light-emitting device |
US20110024786A1 (en) * | 2009-07-30 | 2011-02-03 | Nichia Corproation | Light emitting device and method of manufacturing the light emitting device |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
US6744077B2 (en) * | 2002-09-27 | 2004-06-01 | Lumileds Lighting U.S., Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
TWI241042B (en) | 2004-03-11 | 2005-10-01 | Chen-Lun Hsingchen | A low thermal resistance LED device |
JP4754850B2 (ja) * | 2004-03-26 | 2011-08-24 | パナソニック株式会社 | Led実装用モジュールの製造方法及びledモジュールの製造方法 |
US7560820B2 (en) * | 2004-04-15 | 2009-07-14 | Saes Getters S.P.A. | Integrated getter for vacuum or inert gas packaged LEDs |
TW200629601A (en) * | 2004-10-13 | 2006-08-16 | Matsushita Electric Ind Co Ltd | Luminescent light source, method for manufacturing the same, and light-emitting apparatus |
KR100587017B1 (ko) * | 2005-02-23 | 2006-06-08 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
TWI255566B (en) * | 2005-03-04 | 2006-05-21 | Jemitek Electronics Corp | Led |
US7847302B2 (en) * | 2005-08-26 | 2010-12-07 | Koninklijke Philips Electronics, N.V. | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
WO2007080541A1 (en) * | 2006-01-16 | 2007-07-19 | Philips Intellectual Property & Standards Gmbh | Light emitting device with a eu-comprising phosphor material |
JP4828248B2 (ja) | 2006-02-16 | 2011-11-30 | 新光電気工業株式会社 | 発光装置及びその製造方法 |
US20070284589A1 (en) * | 2006-06-08 | 2007-12-13 | Keat Chuan Ng | Light emitting device having increased light output |
JP4984824B2 (ja) * | 2006-10-26 | 2012-07-25 | 豊田合成株式会社 | 発光装置 |
US7791096B2 (en) * | 2007-06-08 | 2010-09-07 | Koninklijke Philips Electronics N.V. | Mount for a semiconductor light emitting device |
TWI364801B (en) * | 2007-12-20 | 2012-05-21 | Chipmos Technologies Inc | Dice rearrangement package structure using layout process to form a compliant configuration |
JP5440010B2 (ja) * | 2008-09-09 | 2014-03-12 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
CN101840973A (zh) * | 2009-03-20 | 2010-09-22 | 亿光电子工业股份有限公司 | 发光二极管封装结构及其制作方法 |
WO2011027418A1 (ja) * | 2009-09-01 | 2011-03-10 | 株式会社 東芝 | 半導体発光素子及び半導体発光装置 |
JP5202559B2 (ja) * | 2010-03-09 | 2013-06-05 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
FI20105739A (fi) | 2010-06-28 | 2011-12-29 | Vuoluset Ky | Kivestä koostuva kaiutinkotelo ja sen valmistusmenetelmä |
CN102347420A (zh) * | 2010-08-04 | 2012-02-08 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
US8349628B2 (en) * | 2011-03-22 | 2013-01-08 | Tsmc Solid State Lighting Ltd. | Methods of fabricating light emitting diode devices |
-
2012
- 2012-06-19 US US13/527,139 patent/US9034672B2/en active Active
-
2013
- 2013-06-18 TW TW102121689A patent/TWI613840B/zh active
- 2013-06-19 CN CN201310242925.2A patent/CN103515513B/zh active Active
-
2015
- 2015-05-18 US US14/714,564 patent/US20150249192A1/en not_active Abandoned
-
2017
- 2017-05-18 US US15/599,068 patent/US20170256683A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080081400A1 (en) * | 2003-03-06 | 2008-04-03 | Sony Corporation | Device transfer method and display apparatus |
US20060157722A1 (en) * | 2004-12-03 | 2006-07-20 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
TW201029145A (en) * | 2009-01-20 | 2010-08-01 | Epistar Corp | Light-emitting device |
US20110024786A1 (en) * | 2009-07-30 | 2011-02-03 | Nichia Corproation | Light emitting device and method of manufacturing the light emitting device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10811578B1 (en) | 2019-03-27 | 2020-10-20 | Lextar Electronics Corporation | LED carrier and LED package having the same |
Also Published As
Publication number | Publication date |
---|---|
TW201401572A (zh) | 2014-01-01 |
US20170256683A1 (en) | 2017-09-07 |
CN103515513A (zh) | 2014-01-15 |
US9034672B2 (en) | 2015-05-19 |
CN103515513B (zh) | 2018-09-14 |
US20130337591A1 (en) | 2013-12-19 |
US20150249192A1 (en) | 2015-09-03 |
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