TWI591466B - 用於質量流控制器驗證之系統與方法 - Google Patents

用於質量流控制器驗證之系統與方法 Download PDF

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TWI591466B
TWI591466B TW102129262A TW102129262A TWI591466B TW I591466 B TWI591466 B TW I591466B TW 102129262 A TW102129262 A TW 102129262A TW 102129262 A TW102129262 A TW 102129262A TW I591466 B TWI591466 B TW I591466B
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mass flow
gas
flow
controller
flow rate
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TW201415186A (zh
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麥可 克里斯多夫 沙林
拉斐爾 曼迪茲
葛雷葛瑞Ｍ 巴萊特
艾瑞克 希爾
凱斯Ｒ 勞森
安迪 羅瑟爾
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Ａｓｍ智慧財產控股公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
    • G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/18—Status alarms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/34—Hydrogen distribution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0324—With control of flow by a condition or characteristic of a fluid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Fluid Mechanics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Automation & Control Theory (AREA)
  • Measuring Volume Flow (AREA)
  • Flow Control (AREA)

Description

用於質量流控制器驗證之系統與方法
本申請案之實施例係關於用於驗證流過質量流控制器之經量測氣體流量之系統與方法，該質量流控制器尤其為用於半導體製造之質量流控制器。
在半導體製造中，基板或晶圓經受許多製程以便自晶圓沈積或移除層。此等製程中的許多製程涉及將氣體引入含有晶圓之反應室中。此等氣體可包括例如經引入以於基板上沈積層之反應氣體。此外，亦可引入惰性氣體以在反應步驟之間清除來自腔室之反應氣體。用於引入氣體之系統通常包括經由管路最終連接至反應室之氣體源(諸如氣罐、起泡器、其他液體及/或固體汽化裝置)。調整質量流控制器及閥門以選擇引入反應室中的所要源氣體之類型及量。每一質量流控制器(「MFC」)通常經校準以量測處於特定流率下或處於特定流率範圍的特定類型製程氣體之流率。
半導體製造商持續需要改良單一工具及製造操作中運作同一製程之所有工具的製程精確度及可重複性。偏差係由許多因素導致，但偏差之主要原因為MFC所控制的製程氣體流量之精確度及可重複性。與特定製程之理想化完美流量之任何偏差(例如，由不精確之MFC所導致的任 何偏差)可導致產率損失及成本增加，且可影響成品半導體之品質。實際流率偏離其所要流率(此偏差有時稱作「偏移」)之MFC必須加以重新校準或更換，從而導致工具停機時間、輸出降低且成本增加。
一些數位控制MFC在該MFC為新的時具有據報道處於所要流率的+/-1%的範圍內之精確度級。諸如MFV(質量流驗證器)或MFM(質量流量計)之裝置可用於監視並驗證如由MFC量測的進入工具之氣體量為進入工具的實際量，亦即，該等裝置驗證MFC精確度。MFV通常具有+/-1%之精確度，且可用於監視並驗證由MFC量測的氣體流率之量是否已偏離流過MFC之實際氣體流量。然而，MFV的使用係非常耗時的，花費數天來執行完全驗證。此驗證通常在按季度執行，因此，並非總是足夠早地偵測MFC偏差以避免前述偏移問題。
MFM亦可用於監測MFC偏移且可更加快速地偵測偏移。然而，MFC及MFM係組配來用於特定氣體類型及特定流率範圍。包括針對每一氣體類型及流率範圍(針對該每一氣體類型及流率範圍已組配每一MFC)的雙重組配MFM係不實際的。
也還沒有改良使用此等驗證工具之處理製造中的許多工具的精確度之方式，而只有針對內部安置有MFM或MFV之工具的方式。
無論係針對半導體製造設施中之單一工具或不同工具，都極其需要一種驗證流過MFC之實際氣體流量且降低由MFC可變性導致的製程偏差之方法。
本申請案之實施例幫助驗證流過MFC的經量測氣體流量之 精確度。本申請案之實施例亦允許在將更換用MFC安裝於工具上之前由MFM對其進行快速測試，且在必要時驗證並校準流過MFC之氣體流量。因此，MFC之更換將較少可能導致製程偏差。此外，某些實施例可與可使用於多個處理工具及多個MFC上的參考MFM結合操作。尤其而言，此允許安置於每一工具上的MFM與「參考」MFM對準且由此改良工具與工具之匹配。
根據本申請案之各觀點的示範性方法及系統可使用單個MFM來用於一個MFC或複數個MFC。該方法及系統較佳包括(a)一個MFM，其用於驗證針對用於特定工具之MFC的流率，(b)一個MFM，其用於驗證針對用於複數個工具之MFC的流率，或(c)在多個工具運作同一製程的製造廠中，一個MFM可驗證流動特定類型之氣體的每一MFC上的流率，而不管每一MFC所連接之工具如何。若一個MFM用於驗證針對用於多個工具之MFC的經量測氣體流率，則該MFC可各自與MFM流體連通或可將該MFM在工具之間移動。此外，單個MFM可用於僅量測用於不同工具上所使用的不同MFC之相同製程氣體。對流過MFC之氣體流率之調整可手動進行，或經由模組控制器自動進行。
1‧‧‧系統
2‧‧‧MFC(質量流控制器)
4‧‧‧MFM(質量流量計)
6‧‧‧工具
10‧‧‧系統
12‧‧‧MFC
14‧‧‧MFM
16‧‧‧工具
18‧‧‧驗證裝置
20‧‧‧系統
22‧‧‧MFC
24‧‧‧MFM
26‧‧‧工具
30‧‧‧系統
32‧‧‧MFC
34‧‧‧MFM
36‧‧‧工具
38‧‧‧MFV(質量流驗證器)
40‧‧‧系統
42‧‧‧MFC
44‧‧‧MFM
46‧‧‧工具
50‧‧‧系統
52A‧‧‧MFC
52B‧‧‧MFC
52D‧‧‧MFC
52E‧‧‧MFC
52F‧‧‧MFC
52G‧‧‧MFC
52H‧‧‧MFC
52I‧‧‧MFC
52J‧‧‧MFC
52K‧‧‧MFC
52L‧‧‧MFC
54‧‧‧MFM
56A‧‧‧工具
56B‧‧‧工具
56C‧‧‧工具
58‧‧‧驗證裝置
60‧‧‧系統
62A‧‧‧MFC
62B‧‧‧MFC
62C‧‧‧MFC
62D‧‧‧MFC
62E‧‧‧MFC
62F‧‧‧MFC
62G‧‧‧MFC
62H‧‧‧MFC
64A‧‧‧MFM
64B‧‧‧MFM
64C‧‧‧MFM
64D‧‧‧MFM
66A‧‧‧工具
66B‧‧‧工具
68A‧‧‧驗證裝置
68B‧‧‧驗證裝置
68C‧‧‧驗證裝置
68D‧‧‧驗證裝置
800‧‧‧電腦系統
805‧‧‧電腦系統
810‧‧‧處理器
820‧‧‧記憶體
830‧‧‧使用者介面
840‧‧‧半導體處理工具
對本揭露內容之實施例的更完整理解可藉由在結合以下例示性圖式來參照詳細描述及申請專利範圍時而獲得。
圖1為根據本揭露內容之實施例的系統的方塊圖。
圖2為根據本揭露內容之實施例的替代系統的方塊圖。
圖3為根據本揭露內容之實施例的替代系統的方塊圖。
圖4為根據本揭露內容之實施例的替代系統的方塊圖。
圖5為根據本揭露內容之實施例的替代系統的方塊圖。
圖6為根據本揭露內容之實施例的替代系統的方塊圖。
圖7為根據本揭露內容之實施例的替代系統的方塊圖。
圖8描繪根據本揭露內容之實施例的示範性系統。
本揭露內容之實施例係關於用於驗證並可能地調整在半導體處理期間去往反應室之製程氣體的流率之方法及系統。通常期望注入反應室中之製程氣體的量盡可能地精確。對氣體流率的不完全控制可導致成品物理性質之不均勻性或導致廢氣及增加的成本。
本揭露內容之實施例幫助驗證流過MFC的經量測氣體流量之精確度。在各種實施例中，MFM量測流過MFC之實際氣體流量且將該量測值與MFC自身對氣體流量之量測值比較。若各別經量測流率不相同，則可調整去往MFC之氣體流量。較佳地，流過MFC的經量測氣體流率在流過MFM的經量測氣體流率之+/-10%或以下、+/-2%或以下、+/-1%或以下或+/-.05%或以下之範圍內。若不在期望範圍內，則可將去往MFC之氣體流量調整至該範圍內。
一些數位MFC包括活性氣體的流率及相關氮氣當量之資料庫。藉由存取MFC之N2當量表，可比較出由MFC量測的N2流率與由MFV或MFM量測的氣體流率之MFC偏差。諸如氮的單一氣體之使用允許更精確之比較，因為流過MFC及驗證裝置之流量為來自諸如N2的共用氣體之輸出。使共用氣體流過MFC及MFM以用於比較。定標因子用於將由MFM量 測的N2流量與由MFC(其係組配來用於其自有之製程氣體)量測的N2流量進行比較。
MFM的經量測氣體流量亦可利用任何適合之方法或裝置來驗證，該裝置諸如額外MFM、質量流驗證器或限制器管道。藉由將共用氣體流量資料輸入表列格式中，可以接近由特定製程所需的氣體流量的選定數量之點來導出定標因子。此逐步定標對於製程所需的流量範圍而言係非常準確的。最重要地，此定標可由製程控制器用來將實際MFC流率校準至經量測MFM氣體流率。控制器可存取偏離表，且在必要時，校正每一MFC之氣體流量以使得流過每一MFC之實際氣體流量在經量測MFM氣體流量之所要範圍內。
此方法容易自動化及可快速及頻繁地執行，從而允許對MFC效能及方法可重複性之更緊密控制。可更頻繁地執行此方法的事實亦意味，將快速偵測出何時MFC顯著偏移且需要更換。接著可在早期訂購更換用MFC，且使其準備在下一排定的工具維護期時進行安裝而替代單獨地使工具停機來更換MFC，從而減少工具停機時間。
本詳細描述繼續描述如何使用MFM來驗證流過MFC之氣體的經量測流率。接著參照圖式來描述根據本揭露內容之示範性系統。
每一製程氣體來自於諸如含有氣體的槽罐之不同來源且經由管路或管件來轉移。每一製程氣體相比其他製程氣體而言通過不同的MFC且接著注入用於製造半導體之工具中。MFC調節注入該工具中之製程氣體的量。針對特定氣體及針對由製造製程所需的特定氣體流率範圍來校準每一MFC。作為一實例，在半導體製造製程中，取決於待沈積於晶圓上 之層，複數個MFC中之每一者可經規劃以允許特定氣體進入製造半導體之工具中的特定流動。
因此，MFC調節進入該工具之製程氣體的量且經規劃以傳遞特定製造製程所需的量之氣體。如先前提及，由MFC指示之流率可為不正確的，且因此期望利用本揭露內容之系統與方法來驗證：流過MFC的經量測氣體流量為正確的。若不正確，則使用者有權選擇調整去往MFC之氣體流量，或可自動地調整氣體流量。
一些示範性實施例可包括針對一種類型之氣體(文中有時稱為第二氣體)校準之MFC及針對不同類型之氣體(文中有時稱為第一氣體)校準之MFM。校準MFC所針對之第二氣體通常為用於製造半導體的工具中所使用之製程氣體。此等製程氣體可包括但不限於SiH4、GeH4、GeH4/H2、SiHCL3、Si3H8及H2。校準MFM所針對之第一氣體為不同氣體，通常為惰性氣體，因為製程氣體可腐蝕MFM。校準MFM通常所針對的且可用於驗證流過MFC之流量的一些氣體為氮、氫及氦。氮最佳，但可使用任何適合的氣體。在一些實施例中，針對單一氣體來校準之單個MFM可用於驗證複數個MFC之精確度，其中每一MFC係針對不同製程氣體來校準。
在本揭露內容之實施例中，校準MFM所針對之氣體(「第一氣體」)通過MFC及MFM兩者，且氣體流率由每一者量測。因為MFC經校準以量測第二氣體之流量，而非第一氣體之流量，所以根據本揭露內容之各觀點，其量測值係根據定標因子來調整。將定標因子應用於流過MFC的第一氣體的經量測流量以提供流過MFC之第一氣體的真實量測值。將此真實量測值與由MFM量測的氣體流率比較以驗證其是否正確。定標因子可 自任何適合來源或方法獲取或導出。在一較佳實施例中，流過MFC的製程氣體與N2之定標因子係規劃於MFC中且可由與MFC介接之軟體程式來擷取。
以下再現展示利用根據本揭露內容之觀點的方法之結果的表之實例。此表展示由MFM驗證的針對H2及每分鐘30公升之最大流量而校準的MFC的值：
指定為「N2當量」之第一行為駐存於MFC中之規劃值。其為當將MFC調整來流動設定量之製程氣體時流過MFC的N2當量流率。
指定為「入口壓力(MPa)」之第二行為MFC處之氣體入口壓力的實際量測值。實踐本文揭示之實施例不需要此量測值，且該量測值僅用於展示MFC正於適合壓力下操作。
指定為「設定點」之第三行指定MFC上之設定點，其係針對假設MFC每分鐘所流動的製程氣體之體積(在此狀況下為每分鐘之公升 數)。
標記為「%設定點」之第四行指定第三行中設定點佔MFC滿標度設定點之百分比。此處，MFC的滿標度流量為每分鐘3公升之H2，因此每分鐘0.300公升之第一設定點為滿標度流量之10%。
指定為「MFM壓力(T)」之第五行為以托量測的MFM之入口壓力。量測此壓力之目的僅係展示MFM正於適合壓力下操作。
指定為「MFM」之第六行為流過MFM之N2氣體的經量測流量。
指定為「ATM壓力(T)」之第七行為在MFM出口處之經量測壓力，且此壓力對於所有量測而言應為共同的，因為該出口為排氣口。
指定為「D」(△)之第八行為自第六行中的值減去第一行中的值(在同一列)之差。此展示由MFM量測的實際N2流率與MFC的所要流率之間的差值。
指定為「%D」(%△)之第九行為在第八行中所示之差值的百分比。
結合本揭露內容之實施例操作之MFC可組配來用於任何類型之氣體及達到任何所要流率。較佳地，所有MFC係針對對應於MFC之所要流量範圍的特定N2範圍來校準。在本揭露內容之一些實施例中，與MFC介接之軟體程式可提供設定點(或MFC之最大流率百分比)且擷取MFC之N2當量流率。
對於以上表中描述之實例而言，在H2的3.00公升(或MFC最大流率的100%)設定點處，N2當量流率為2.995。同樣，在1.5公升(或 MFC最大流率的50%)設定點處，N2當量流率為1.477。相似地，在.30公升(最大流率的10%)設定點處，MFC之N2當量流率為.303。
在每一設定點處MFC之所要流率可與來自MFM的經量測值比較，如第八欄中所示。在以上實例中，當MFC讀取2.995之流率時，此應對應H2之3.00公升流率，則MFM指示流率實際為3.008公升或.43%之差異。需要時，可調整MFC之流率使得其實際流率更緊密匹配所要流率。然而，在許多半導體處理系統中，來自MFC之某個不精確範圍可為可接受的。在一些實施例中，例如，MFC精確度之接受公差可為+/-1%。在此等狀況下，以上實例中的大部分設定點之MFC輸出將為可接受的。然而，對於.30公升(10%)設定點而言，MFC偏離-1.12%，在此情形下，將需要對MFC流率之調整。否則，過多或過少製程氣體可導致所製造之半導體裝置中的缺陷。根據本揭露內容之實施例，對MFC流率之調整可自動或手動進行且在製程期間的任何點處進行。
對MFC輸入之調整可視需要為+/-10%或以上以便校正由MFC量測的不精確流率。此調整可手動或自動執行。在一些示範性實施例中，對偵測到不精確的、與來自MFM的流率量測值比較超過預定閾值之流率的回應引起對MFC之輸入設定點的自動調整。結合本揭露內容之實施例操作之方法可向半導體處理工具之操作者發出已回應MFC中之偏移而進行自動調整之警告，或者在調整MFC之前請求來自操作者之確認。
此方法之一選擇為將單個MFM分接至由共同晶圓處置平台服務的工具叢集。可存在1、2、3、4個或4個以上的連接至共同MFM歧管之處理工具。因此，一工具上的特定類型之MFC可與另一工具上的相同 MFC比較，且逐步定標因此將係共同參考的MFM。MFM可重複性比其精確度好得多，通常在+/-0.2%的範圍。因此，單個晶圓平台內各種製程工具氣體效能之匹配可將差異自典型的+/-1%降低至+/-0.2%，改良率為500%。此改良的匹配將改良晶圓產率且為製造商節省資金。
在本揭露內容之實施例中，可將「參考」MFM在平台之間移動以便在每一平台處執行逐步定標例程。此乃較長的過程，因為當安裝MFM或自系統移除MFM時，將需要氣體管線洩漏檢查，但將允許平台之間的匹配為+/-0.2%。此為極其需要之改良且將為半導體製造者降低其製造廠中多個工具組之成本。
經由存取每一MFC中的N2當量表並與N2的MFM流量相比較，可手動或自動完成逐步定標之產生。在一些示範性實施例中，此等及其他方法可由在電腦系統上操作之軟體來執行，所述系統諸如圖8所描繪及以下更詳細描述的系統800。
現在轉向圖式，其中目的係描述本揭露內容之示範性實施例而非對其限制，圖1展示系統1之示意圖。
系統1具有複數個(4個)MFC 2，其可連接(亦稱為流體連通)至稱為第一位置之MFM 4，或者連接至稱為第二位置之工具4。應瞭解，當MFC 2處在第一位置時，其在給定時間期內單獨地與MFM 4連通，因為MFM 4不能同時驗證流過多個MFC 2之經量測氣體流率。
在系統1中，任何適合類型的結構(本文中稱為閥門)改變退出MFC2以移動流過工具6或MFM4之氣體流。當氣體流移動流過MFM4時MFC2之，經量測流率可如本文描述由流過MFM4之經量測流率來驗證。 較佳地，退出MFM4之氣體前往適合的排氣口(未示出)。
圖2展示本揭露內容之替代系統10，其在所有方面皆與系統1相同。MFC 12對應MFC2，MFM 14對應MFM 4且工具16對應工具6。系統10中增加的結構為MFV或其他驗證裝置18，該驗證裝置驗證由MFM 14量測的氣體流率。裝置18可為MFV或校準管，其每一者皆為熟習相關技術者所知，但先前尚不知曉以此方式來使用。
圖3展示本揭露內容之替代系統20。MFC 22對應MFC 2及MFM 24對應系統1中的MFM 4。在系統20中，存在至少三個MFM 24。當在第一位置時，使進入每一單獨MFC 22之氣體通過複數個MFM 24以驗證流過MFC的經量測氣體流率。若MFM中之一不正確地執行功能，則其對氣體流率之量測將不同於其他兩個(或兩個以上)MFM之量測。在該狀況下，若三個MFM中的兩個量測出基本相同的流率，則即使MFM中之一者可量測出不同流率，亦可驗證流過MFC之經量測流率且可修復或更換故障MFM 24。
圖4展示系統30，其中MFM 34定位在進入工具36之氣流通道中。在此實施例中，MFC 32對應MFC 2、MFM 34對應MFM 4、工具36對應工具6且MFV 38對應MFV 18。在此實施例中，MFM經構造以使得其不容易受通過MFC 32之製程氣體腐蝕，且製程氣體通過MFM 34並進入工具36中。當驗證流過MFC 32中任一者之經量測氣體流量之精確度時，如以上所說明來使用共用氣體且較佳將退出MFM 34之氣體流路徑選擇至排氣口而非進入工具36中(雖然可將其路徑選擇至工具35，該工具隨後清除該共用氣體)。如本文描述之其他MFV，MFV 38為可選特徵。
圖5展示本揭露內容之替代系統40，其中在MFC 42及工具46之上游存在至少三個MFM 44。在此實施例中，每一製程氣體將自來源(未示出)流過複數個MFM 44且接著自最後的MFM 44路徑選擇至針對該製程氣體來校準之MFC。此等MFM必須設計及構造來承受製程氣體的腐蝕效應。
為驗證任何MFC 42之精確度，替代流動製程氣體，將使諸如氮之另一氣體流過MFM 44及待驗證之MFC 42。在驗證過程期間，退出MFC之氣體將路徑選擇至排氣口而非工具46。
圖6展示根據本揭露內容之替代系統50。系統50具有複數個工具56A、56B及56C。複數個工具中之每一者具有複數個(在此實施例中每工具四個)MFC 52A-52L，其中每一者接收來自來源(未示出)之製程氣體及將製程氣體注入相關聯的工具(56A、56B或56C)中。
在此實施例中，存在驗證每一MFC之流率的單個MFM。如本文所說明，一次驗證一個MFC的流率。系統50可具有按預定排程自動驗證每一MFC之流率的控制器。如本文描述之其他實施例，可將MFM 54連接至MFV或其他驗證裝置58以驗證由MFM 54量測的氣體流率之精確度。
圖7展示根據本揭露內容之替代系統60。在系統60中存在用於驗證複數個MFC之一個MFM，其中與該MFM相關聯的每一MFC係針對相同氣體來校準。
系統60包括複數個工具(在本實例中為兩個)66A及66B。工具中每一者皆包括複數個MFC，所展示的為每工具四個MFC。系統60 模擬製造廠，其中相同製程氣體係注入每一工具中。因此，MFC 62A及62E各自針對相同氣體來校準，該氣體為不同於校準其他MFC所使用之氣體。MFC 62B及62F亦針對相同氣體來校準，該氣體為不同於校準其他MFC所使用之氣體。MFC 62C及62G係針對相同氣體來校準，該氣體不同於校準其他MFC所使用之氣體。最後，MFC 62D及62H係針對相同氣體來校準，該氣體不同於校準其他MFC所使用之氣體。
如所示，針對相同氣體來校準的各複數個MFC係由MFM(64A-64D)來驗證其氣體流率，該MFM不用於驗證針對不同氣體校準之MFC的氣體流率。視情況，可將每一MFM連接至MFV或其他驗證裝置(68A-68D)以驗證由MFM量測的氣體流率。
如先前所描述，為驗證流過MFC之經量測氣體流率(由每一MFM一次驗證一個)，使諸如氮之第一氣體流過MFC及接著流過MFM。驗證及可能的調整係如以上所述來執行。
圖8描繪根據本揭露內容之各觀點之示範性系統800的實施例。在此示範性實施例中，系統800包括電腦系統805，其包含處理器810、記憶體820及使用者介面830。電腦系統805與半導體處理工具840通訊，該半導體處理工具可包括結合以上圖1至圖7描述之半導體處理工具中的任一者。
電腦系統805可儲存組配來在記憶體820中執行本文描述之方法的軟體程式且使用處理器810來運行該軟體程式。電腦系統805可包括任何數量的單獨處理器810及記憶體820。可經由使用者介面830在電腦系統805與使用者之間進行通訊任何種類之資訊及命令。此資訊亦可在電腦 系統805與半導體處理工具840之間進行通訊(例如，經由諸如網際網路之網路來傳達)。
電腦系統800可控制或收集來自工具840中構件中任一者之資訊，該等構件包括結合本揭露內容之實施例操作之任何MFC或MFM。使用者介面830可包括各種周邊裝置(諸如監視器及印表機)以及任何適合的控制裝置(諸如滑鼠及鍵盤)，以便允許使用者控制在電腦系統805上操作之軟體並與其互動。電腦系統805可包括任何數量的其他構件、裝置及/或系統。
以上展示及描述之特定實行方案係對示範性實施例及其最佳模式之說明，且不意欲以任何方式限制本揭露內容之範疇。實際上，出於簡潔之原因，可能並未詳細描述習知資料儲存、資料傳輸及系統之其他功能觀點。在各圖式中所示之方法可包括更多、更少或其他的步驟。此外，在不脫離本揭露內容之範疇的情況下，步驟可以任何適合的順序執行。此外，各圖式中展示之連接線意欲表示各種元件之間的示範性功能關係及/或實體耦合。實際系統中可存在許多替代或額外的功能關係或實體連接。
1‧‧‧系統
2‧‧‧MFC
4‧‧‧MFM
6‧‧‧工具

Claims (33)

  1. 一種驗證流過一質量流控制器之氣體流率之方法，該方法包含以下步驟：(a)量測流過一質量流控制器之一第一氣體之一流量，該質量流控制器針對一第二氣體來校準；(b)量測流過一質量流量計之該第一氣體的實際流量，該質量流量計針對該第一氣體來校準；(c)基於校準該質量流控制器所針對之該第二氣體，選擇一定標因子來應用至流過該質量流控制器之該第一氣體的經量測流量；(d)使用該定標因子定標流過該質量流控制器之該第一氣體的該經量測流量，以判定流過該質量流控制器之該第一氣體的經定標量測流量；(e)將流過該質量流控制器之該第一氣體的該經定標量測流量與流過該質量流量計之該第一氣體的經量測實際流量相比較；以及(f)判定流過該質量流控制器之該第一氣體的該經定標量測流量與流過該質量流量計之該第一氣體的該經量測實際流量之間的差異，其中該第一氣體及該第二氣體選擇性地流過該質量流量計或流至一工具。
  2. 如申請專利範圍第1項之方法，其中若流過該質量流量計之該第一氣體的該經量測實際流量不同於流過該質量流控制器之該經定標量測流量，則調整送往該質量流控制器之氣體流量。
  3. 如申請專利範圍第2項之方法，其中將流過該質量流控制器之氣體的該經量測流量調整至由以下者組成之群組中之一：(a)流過該質量流量計 之該經量測實際流量之+/-10%或以下、(b)流過該質量流量計之該經量測實際流量之+/-2%或以下、(c)流過該質量流量計之該經量測實際流量之+/-1%或以下；(d)流過該質量流量計之該經量測實際流量之+/-0.5%。
  4. 如申請專利範圍第1至3項中任一項之方法，其中若流過該質量流控制器之經量測流率與流過該質量流量計之經量測實際流率之間差異，則將一警告發送至一使用者。
  5. 如申請專利範圍第1至3項中任一項之方法，其中對一單個質量流控制器執行對複數個經定標量測流率之所述驗證步驟。
  6. 如申請專利範圍第1至3項中任一項之方法，其中對複數個質量流控制器中每一者執行對複數個經定標量測流率之所述驗證步驟。
  7. 如申請專利範圍第1至3項中任一項之方法，其中該定標因子係規劃於該質量流控制器中且由一使用者存取。
  8. 如申請專利範圍第5項之方法，其中針對每一氣體流率存在一不同定標因子。
  9. 如申請專利範圍第8項之方法，其中每一不同定標因子係規劃於該質量流控制器中且由一使用者存取。
  10. 如申請專利範圍第1至3項中任一項之方法，其中該第一氣體係選自由氮、氫及氦組成之群組。
  11. 如申請專利範圍第1至3項中任一項之方法，其中該第二氣體係選自由SiH4、GeH4、GeH4/H2、SiHCl3、Si3H8及H2組成之群組。
  12. 如申請專利範圍第1至3項中任一項之方法，其進一步包括與該質量流量計流體連通之一質量流驗證器，且進一步包括以下步驟：該質量流 驗證器驗證由該質量流量計量測的該第二氣體之經量測實際流率。
  13. 如申請專利範圍第1至3項中任一項之方法，其進一步包括串聯且流體連通的至少三個質量流量計，且其中該第一氣體退出該質量流控制器且通過所述質量流量計中每一者，以驗證通過該質量流控制器的第一氣體之該經量測流量。
  14. 如申請專利範圍第1至3項中任一項之方法，其進一步包括與該質量流量計流體連通之一校準管，且其進一步包括以下步驟：引導來自該質量流量計的該第一氣體中的至少一些流過該校準管，以驗證流過該質量流量計的該第一氣體的該經量測流量。
  15. 如申請專利範圍第2項之方法，其中送往該質量流控制器之該氣體流量由一使用者手動調整。
  16. 如申請專利範圍第2項之方法，其中去往該質量流控制器之該氣體流量係藉由該質量流量計將一信號發送至一控制器來電子式地調整。
  17. 如申請專利範圍第1至3項中任一項之方法，其進一步包括以下步驟：在驗證流過該質量流控制器之該第一氣體的經量測流率之前，自該質量流控制器清除該第二氣體。
  18. 如申請專利範圍第1至3項中任一項之方法，其中退出該質量流控制器之氣體自該工具重新路徑選擇至該質量流量計，以驗證流過該質量流控制器之該第一氣體的經量測流率。
  19. 如申請專利範圍第1至3項中任一項之方法，其中存在複數個質量流控制器，所述複數個質量流控制器中之一者係針對該第二氣體來校準，且所述複數個質量流控制器中之其他者中的每一者係針對不同於該第一氣 體之一氣體來校準，且可將所述複數個質量流控制器中每一者單獨連接至該質量流量計以驗證流過所述質量流控制器中每一者之該第一氣體的經量測流率。
  20. 如申請專利範圍第18項之方法，其進一步包括以下步驟：該質量流量計按一預定時間排程自動驗證流過所述質量流控制器中每一者之第一氣體的該經量測流量。
  21. 如申請專利範圍第19項之方法，其中所述質量流控制器中每一者包括定標因子，且所述定標因子中每一者係基於由該質量流控制器所調節之氣體的類型及流過一氣體流量控制器之氣體的一流率。
  22. 如申請專利範圍第1至3項中任一項之方法，其中存在服務於一第一工具之複數個質量流控制器及服務於一第二工具之複數個質量流控制器，且流過所述質量流控制器中每一者之氣體流率係由一單個質量流量計來驗證。
  23. 如申請專利範圍第1至3項中任一項之方法，其進一步包括複數個工具及與每一工具相關聯的複數個質量流控制器，其中與每一工具相關聯的每一質量流控制器係針對一氣體來校準，該氣體不同於校準與該工具相關聯的每一其他質量流控制器所針對之氣體；且所述複數個工具中每一者具有至少一個質量流控制器，其係針對與校準用於所述複數個工具中另一者之所述複數個質量流控制器中至少一者所針對之氣體相同氣體來校準，且其中一個質量流量計驗證流過針對該相同氣體來校準的所述質量流控制器中每一者之該第一氣體的經量測流率。
  24. 如申請專利範圍第1至3項中任一項之方法，其進一步包括以下步 驟：(a)由該質量流量計驗證流過用於一第一工具的至少一個質量流控制器之該第一氣體的流率；以及(b)由該質量流量計驗證流過在一第二工具處的至少一個質量流控制器之該第一氣體的流率。
  25. 如申請專利範圍第24項之方法，其進一步包括以下步驟：將該質量流量計自該第一工具移動至該第二工具。
  26. 一種用於驗證流過一質量流控制器之氣體流率之系統，該系統包含：(a)一質量流控制器，其係針對一第二氣體來校準及提供；(b)一儲存裝置，其包括一或多個定標因子以將該第二氣體的流率定標至一第一氣體的一流率；(c)一質量流量計，其提供流過該質量流量計的該第一氣體之氣體流率的一經量測實際量，其中該質量流控制器置於該質量流量計與工具之間；以及(d)一閥門，該閥門具有一第一位置，其中退出該質量流控制器之氣體經引導流過該質量流量計；且該閥門具有一第二位置，其中退出該質量流控制器之氣體未經引導流過該質量流量計；藉以當該閥門處於其第一位置時，可藉由利用該定標因子及將流過該質量流控制器之第一氣體流率的經量測量與流過該質量流量計之該第一氣體的氣體流量的該經量測實際量相比較來驗證流過該質量流控制器之該第一氣體流率的該經量測量。
  27. 如申請專利範圍第26項之系統，其進一步包括一氣體流量驗證裝 置，其連接至該質量流量計以驗證流過該質量流量計之氣體流量的該經量測量為正確的。
  28. 如申請專利範圍第26至27項中任一項之系統，其中氣體流量驗證裝置係選自由一質量流驗證器及一校準管組成之群組。
  29. 如申請專利範圍第26至27項中任一項之系統，其中存在複數個質量流控制器及一單個質量流量計，且僅來自一個質量流控制器之氣體在任何給定時間經引導流過該質量流量計。
  30. 如申請專利範圍第26至27項中任一項之系統，其中當該閥門處於其第二位置時，退出該質量流控制器之氣體進入用於製造半導體或太陽能電池之一工具。
  31. 如申請專利範圍第26至27項中任一項之系統，其進一步包括一自動化系統，其用於在流過該質量流控制器之氣體流量的該經量測量與流過氣體流量計之氣體流量的經量測量之間存在預定差異時調整去往該質量流控制器之氣體流量。
  32. 如申請專利範圍第26至27項中任一項之系統，其中存在服務於一第一工具之複數個質量流控制器及服務於一第二工具之複數個質量流控制器，且流過所述質量流控制器中每一者之氣體流率係藉由一單個質量流量計來驗證。
  33. 如申請專利範圍第26至27項中任一項之系統，其進一步包括複數個工具及與每一工具相關聯的複數個質量流控制器，其中與每一工具相關聯的每一質量流控制器係針對一氣體來校準，該氣體不同於校準與該工具相關聯的每一其他質量流控制器所針對之氣體；且所述複數個工具中每一 者具有至少一個質量流控制器，其係針對與校準用於所述複數個工具中另一者之所述複數個質量流控制器中至少一者所針對之氣體相同的氣體來校準，且其中一個質量流量計驗證流過針對該相同的氣體來校準的所述質量流控制器中每一者之該第一氣體的經量測流率。
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TW201415186A (zh) 2014-04-16
KR20200102967A (ko) 2020-09-01
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US20140060147A1 (en) 2014-03-06

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