TWI586632B - 金屬-陶瓷基板,及製造金屬-陶瓷基板之方法 - Google Patents
金屬-陶瓷基板,及製造金屬-陶瓷基板之方法 Download PDFInfo
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Description
本發明關於如申請專利範圍第1項之前言中所主張的金屬-陶瓷基板,及如申請專利範圍第10項之前言中所主張之製造金屬-陶瓷基板的方法。
大量各式類型之金屬-陶瓷基板以從陶瓷所形成之絕緣層及接合至該從陶瓷所形成之絕緣層的表面之一的至少一個結構化金屬化所組成的電路板形式存在,用於形成導體、接觸、接觸區或固定區。
為了減少施加至陶瓷層之金屬化層的厚度,需要提高該陶瓷層的熱傳導性。為此,例如從DE 10 2004 012 231 B4已知經金屬化之陶瓷基板,該專利中,為了獲得高機械強度及高熱傳導性,該陶瓷層係從具有某一比例之二氧化鋯的陶瓷材料製造。除了氧化鋁(Al2O3)之外,該陶瓷材料含有二氧化鋯(ZrO2)以及氧化釔(Y2O3)及/或氧化鈣(CaO),其中Al2O3,ZrO2
以及Y2O3及/或CaO係以下列相對於該陶瓷層之總重量的比例包含於該層中:Al2O3介於91重量%與97.96重量%之間;ZrO2介於2重量%與9重量%之間;及Y2O3及/或CaO介於0.04重量%與1重量%之間。此類型之陶瓷層在室溫下的熱傳導性係介於20與23W/mK之間。然而,需要進一步提高熱傳導性,同時維持該陶瓷層或該經金屬化陶瓷基板的彎曲強度或只少許變差。
另一實例為所謂「DCB法」(直接銅接合),其使用金屬或銅薄片或表面上具有一層或塗層(「熔融層」,其係由該金屬與反應性氣體(較佳為氧)之化學化合物所形成)的金屬或銅箔,用於將金屬層或薄片(較佳為銅薄片或箔)接合在一起及/或與陶瓷或陶瓷層接合。在該描述之方法中,例如在US-PS 37 44 120或在DE-PS 23 19 854中,該層或塗層(「熔融層」)形成熔點低於該金屬(例如銅)之熔點的共熔物,因此藉由將該金屬或銅箔施加至該陶瓷並加熱全部的層,可藉由基本上只熔融在該熔融層或氧化層之區中的金屬或銅而接合在一起。此種DCB法則例如具有下列程序步驟:˙氧化銅箔以使得產生均勻氧化銅層;˙將該具有均勻氧化銅層的銅箔施加至該陶瓷層;˙將該組合件加熱至介於約1025℃與1083℃之間的加工溫度,例如加熱至約1071℃;
˙冷卻至室溫。
此外,文件DE 22 13 115及EP-A-153 168揭示所謂活性軟焊法,其用於接合形成金屬化之金屬層或金屬箔(尤其是銅層或銅箔)與陶瓷材料或陶瓷層。該方法中,其例如亦可尤其用於製造金屬-陶瓷基板,在介於大約800至1000℃之間的溫度下使用硬焊料在金屬箔(例如銅箔)與陶瓷基板(例如氮化鋁陶瓷)之間產生接合,其中該硬焊料除了諸如銅、銀及/或金之主要組分外,亦含有活性金屬。該活性金屬(其為例如選自Hf、Ti、Zr、Nb及Ce之群組中的至少一種元素)藉由化學反應在該硬焊料接合與該陶瓷之間產生接合,同時該硬焊料與該金屬之間的接合為金屬硬焊料接合。
根據前文所討論之先前技術,本發明目的係提出一種金屬-陶瓷基板以及其製造之相關方法,其包含具有經改良熱傳導性之具有二氧化鋯的陶瓷材料。該目標係藉由根據申請專利範圍1或10之金屬-陶瓷基板或其製造方法而達成。
本發明之金屬-陶瓷基板的基本方面係氧化鋁、二氧化鋯以及氧化釔係相對於該陶瓷層之總重量以下列比例包含在該陶瓷層中:二氧化鋯在2重量%至15重量%之範圍中;氧化釔在0.01重量%至1重量%之範圍中;且氧化鋁在84重量%至97重量%之範圍中,其中所使用之氧
化鋁的平均晶粒大小在2至8微米之範圍中,且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比大於0.6。藉由本發明之陶瓷層具有在2重量%至15重量%的範圍中之二氧化鋯以及使用平均晶粒大小在2至8微米之範圍中的氧化鋁,熱傳導性可提高至多達10%。特別有利的是,該陶瓷層具有超過25W/mK之熱傳導性。以此方式,可根據應用而使金屬化層的厚度縮減至0.05mm。
本發明之有利變化中,二氧化鋯之比例係在2重量%至10重量%之範圍中,氧化釔之比例係在0.01重量%至1重量%之範圍中,及氧化鋁之比例係在89重量%至97重量%之範圍中。藉由使二氧化鋯比例降至低於10重量%,較佳係同時提高燒結溫度,可獲得熱傳導性之進一步顯著改善,其中太高之燒結溫度造成彎曲強度降低。
本發明另一具體實例中,該陶瓷層具有超過500MPa之彎曲強度。
本發明之有利變化中,結晶相中之二氧化鋯主要具有四方晶體結構,其中該二氧化鋯之總晶體結構中的四方晶體結構之分率超過80%。結晶相中之四方晶體結構增加及相關聯之從該陶瓷排除玻化相亦造成熱傳導性改善。
本發明另一具體實例中,本發明之金屬-陶瓷基板係例如形成如下,使該陶瓷層具有在0.1mm至1.0mm之範圍中,較佳在0.2mm至0.5mm之範圍中的層厚度;及/或
該金屬化具有在0.05mm至1.2mm之範圍中,較佳在0.1mm至0.5mm之範圍中的層厚度;及/或該金屬化係經結構以使得可形成接觸或接合表面;及/或該金屬化係藉由銅或銅合金及/或鋁或鋁合金之箔或層所形成;其中所引用之特徵可獨立使用或以任何組合使用。
本發明亦關於一種製造包含至少一個具有第一及第二表面之陶瓷層的金屬-陶瓷基板之方法,其中該等表面中之至少一者係與至少一個金屬化接合,其中陶瓷層係從包含氧化鋁、二氧化鋯及氧化釔之陶瓷材料製造。根據本發明,為了製造該陶瓷層,使用相對於該陶瓷層之總重量為以下比例之氧化鋁、二氧化鋯及氧化釔:二氧化鋯在2重量%至15重量%之範圍中;氧化釔在0.01重量%至1重量%之範圍中;且氧化鋁在84重量%至97重量%之範圍中,其中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中,且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比大於0.6。
本發明之方法係在例如以下方面進一步發展:形成至少一個呈由銅或銅合金所形成之箔或層形式的金屬化,該金屬化藉由直接銅接合方法或活性軟焊方法,或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑,尤其是碳奈米纖維)的黏著接合而接合至該陶瓷層;
及/或形成至少一個呈由鋁或鋁合金所形成之箔或層形式的金屬化,該金屬化藉由直接鋁接合(DAB)方法,或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑,尤其是碳奈米纖維)的黏著接合而與該陶瓷層接合在一起,其中所引用之特徵可獨立使用或組合使用。
再次,就該陶瓷層之製造而言,有利的是使用結晶相主要具有四方晶體結構之二氧化鋯,其中該四方晶體結構對該二氧化鋯之總晶體結構的比例超過80%。
本發明內文中所使用的「大約」、「基本上」或「約」等用辭意指與個別精確值的平均偏差為±10%,較佳為±5%,及/或偏差呈與該函數無關之差異的形式。
從以下範例具體實例之描述及圖式可明暸本發明之其他具體實例、優點及應用。為此,不論是在申請專利範圍之總論或其附項項中,獨立或以任何組合描述或圖示的所有特徵獨立地構成本發明主題。此外,該等申請專利範圍之內容應被視為形成本說明的構成部分。
1‧‧‧金屬-陶瓷基板
2‧‧‧陶瓷層
2a‧‧‧第一表面
2b‧‧‧第二表面
3‧‧‧第一金屬化
4‧‧‧第二金屬化
茲將藉助於圖式及實例描述本發明,其中圖1顯示通過具有一個金屬化之本發明金屬-陶瓷基板的簡化斷面圖;及圖2顯示通過具有兩個金屬化之本發明金屬-陶瓷基
板的簡化斷面圖;及圖3顯示圖2之具有兩個金屬化的金屬-陶瓷基板之其他具體實例的簡化斷面圖;及圖4顯示慣用陶瓷層與本發明金屬-陶瓷基板中具有各種氧化鋯之陶瓷層的熱傳導性之溫度曲線圖。
圖1以簡化形式顯示通過包含至少一個具有兩個相反表面(換言之,第一及第二表面2a,2b)的陶瓷層2之本發明金屬-陶瓷基板的斷面。
圖1所示之本發明的金屬-陶瓷基板1係設置有至少一個金屬化3。在本發明範例具體實例中,該第一表面2a係設置有第一金屬化3,而與該第一表面相反的第二表面2b不具有任何金屬化。
圖2及圖3顯示本發明金屬-陶瓷基板1之兩個其他具體實例,其中第一表面2a係設置有第一金屬化3,而與該第一表面2a相反的第二表面2b係設置有第二金屬化4。
該第一及/或第二金屬化3,4較佳係結構化之形式,即,產生複數個用於連接電子組件之接觸區或接觸表面。圖1及2以實例方式個別結構化之第一金屬化3,而圖3顯示結構化之第一及第二金屬化3,4。
此類型之金屬-陶瓷基板以已知方式作為用於電或電子開關或開關模組(特別是用於電源切換)的電路板。為
此,金屬化3,4之結構化係使用一般技術(諸如遮罩及蝕刻技術)產生。
根據本發明,用以製造金屬-陶瓷基板1之陶瓷層2的陶瓷材料包含氧化鋁(Al2O3)、二氧化鋯(ZrO2)以及氧化釔(Y2O3)。該陶瓷層2以下列相對於該陶瓷層2之總重量的比例含有氧化鋁、二氧化鋯及氧化釔:˙二氧化鋯在2重量%至15重量%之範圍中;˙氧化釔在0.01重量%至1重量%之範圍中;且˙氧化鋁在84重量%至97重量%之範圍中。
該實例中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中。使用具有以下比例之組成尤其可獲得更佳熱傳導性:˙二氧化鋯在2重量%至10重量%之範圍中;˙氧化釔在0.01重量%至1重量%之範圍中;且˙氧化鋁在89重量%至97重量%之範圍中。
該陶瓷層2具有晶體結構,即其係由複數個彼此材料之微晶體或晶粒組成。具有不同定向但為相同晶體結構之微晶體或晶粒係由所謂晶界而彼此分開。若將氧化鋁晶粒之晶界長度對所有成分之晶界的總長度之比選擇為大於0.6,則發現熱傳導性相當大幅改善。此外,該陶瓷層2之強度實質上提高。該陶瓷層2之熱傳導性較佳係大於25W/mK,即比具有二氧化鋯內容物的已知陶瓷層2提高8%至10%。
較佳地,結晶相中所使用之二氧化鋯主要具有四方晶
體結構,其中該四方晶體結構對該二氧化鋯之總晶體結構的比例超過80%。
此外,該陶瓷層2具有在0.1mm至1.0mm之範圍中,較佳在0.2mm至0.5mm之範圍中的層厚度,然而該陶瓷層2之彎曲強度係經選擇為例如超過500MPa。
該等金屬化3,4係例如藉由銅或銅合金及/或鋁或鋁合金之箔或層所形成,即,可想像銅或銅合金及鋁或鋁合金的組合。為此,該等金屬化3,4之層厚度在0.05mm至1.2mm之範圍中,較佳在0.1mm至0.5mm之範圍中。
各種方法適用於將該陶瓷層2平坦接合至該第一或第二金屬化3,4;其係取決於該陶瓷層2及該等金屬化3,4所使用之材料。
如此,呈銅或銅合金之箔或層形式的金屬化3,4係藉由例如使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑,尤其是碳奈米纖維)的接合而與該陶瓷層2接合。或者,該陶瓷層之平坦接合可使用DCB法或借助活性軟焊法進行。
從鋁或鋁合金所產生之金屬化3,4係使用例如直接鋁接合(DAB)或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑,尤其是碳奈米纖維)的接合而與該陶瓷層2接合。
圖4將先前技術陶瓷層之實例及本發明金屬-陶瓷基板中所使用的陶瓷層2顯示成不同氧化鋯含量(換言之,
具有5%比例之ZrO2的陶瓷層、具有7%含量之ZrO2的陶瓷層及具有9%含量之ZrO2的陶瓷層)之熱傳導性(W/mK表示)與溫度(以℃表示)的圖。此顯示在大約24℃之室溫下的熱傳導性大於25W/mK,因此提供熱傳導性提高約8至10%。
本發明於本文中已使用範例具體實例加以說明。應暸解在不違背在本發明之發明概念的情況下,可能有許多修改及變化。
1‧‧‧金屬-陶瓷基板
2‧‧‧陶瓷層
2a‧‧‧第一表面
2b‧‧‧第二表面
3‧‧‧第一金屬化
Claims (13)
- 一種金屬-陶瓷基板,包含至少一個具有第一及第二表面(2a,2b)之陶瓷層(2),該陶瓷層(2)的該等表面(2a,2b)中之至少一者上有提供金屬化(3,4),其中形成該陶瓷層(2)之陶瓷材料含有氧化鋁、二氧化鋯及氧化釔,其特徵在於氧化鋁、二氧化鋯以及氧化釔係相對於該陶瓷層(2)之總重量以下列比例包含在該陶瓷層(2)中:˙二氧化鋯在2重量%至15重量%之範圍中;˙氧化釔在0.01重量%至1重量%之範圍中;且˙氧化鋁在84重量%至97重量%之範圍中,其中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中,且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比大於0.6。
- 如申請專利範圍第1項之金屬-陶瓷基板,其中在該陶瓷層(2)中之氧化鋁、二氧化鋯及氧化釔相對於該陶瓷層(2)之總重量之比例如下:˙二氧化鋯在2重量%至10重量%之範圍中;˙氧化釔在0.01重量%至1重量%之範圍中;且˙氧化鋁在89重量%至97重量%之範圍中。
- 如申請專利範圍第1項之金屬-陶瓷基板,其中該陶瓷層(2)具有超過25W/mK之熱傳導性。
- 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板,其中該陶瓷層(2)具有超過500MPa之彎曲強 度。
- 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板,其中該陶瓷層(2)具有在0.1mm至1.0mm範圍中,較佳在0.2mm至0.5mm範圍中之層厚度。
- 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板,其中結晶相中之二氧化鋯主要具有四方晶體結構,其中該二氧化鋯之總晶體結構中的四方晶體結構之分率超過80%。
- 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板,其中該金屬化(3)具有在0.05mm至1.2mm範圍中,較佳在0.1mm至0.5mm範圍中之層厚度。
- 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板,其中該金屬化(3)係經結構化以使得可形成接觸或接合表面。
- 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板,其中該金屬化(3,4)係藉由銅或銅合金及/或鋁或鋁合金之箔或層所形成。
- 一種製造包含至少一個具有第一及第二表面(2a,2b)之陶瓷層(2)的金屬-陶瓷基板(2)之方法,其中該等表面(2a,2b)中之至少一者係與至少一個金屬化(4)平坦接合,其中該陶瓷層(2)係從包含氧化鋁、二氧化鋯及氧化釔之陶瓷材料製造,該方法特徵在於,為了製造該陶瓷層(2),使用相對於該陶瓷層(2)之總重量為以下比例之氧化鋁、二氧化鋯及氧化釔: ˙二氧化鋯在2重量%至15重量%之範圍中;˙氧化釔在0.01重量%至1重量%之範圍中;且˙氧化鋁在84重量%至97重量%之範圍中,其中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中,且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比係經選擇以使之大於0.6。
- 如申請專利範圍第10項之方法,其中形成至少一個呈由銅或銅合金所形成之箔或層形式的金屬化(3,4),該金屬化(3,4)藉由直接銅接合方法或活性軟焊方法,或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑,尤其是碳奈米纖維)的黏著接合而接合至該陶瓷層(2)。
- 如申請專利範圍第10項之方法,其中形成至少一個呈由鋁或鋁合金所形成之箔或層形式的金屬化(3,4),該金屬化(3,4)藉由直接鋁接合(DAB)方法,或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑,尤其是碳奈米纖維)的黏著接合而與該陶瓷層接合在一起。
- 如申請專利範圍第11或12項中任一項之方法,其中二氧化鋯係用於該陶瓷層(2)之製造,該二氧化鋯之結晶相主要具有四方晶體結構,其中該四方晶體結構相對於該二氧化鋯之總晶體結構的比例超過80%。
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WO2020115868A1 (ja) | 2018-12-06 | 2020-06-11 | 日本碍子株式会社 | セラミックス焼結体及び半導体装置用基板 |
JP7176002B2 (ja) | 2018-12-06 | 2022-11-21 | 日本碍子株式会社 | 半導体装置用基板 |
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DE202013012790U1 (de) | 2019-08-23 |
DE102012110322A1 (de) | 2014-04-30 |
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WO2014067511A1 (de) | 2014-05-08 |
KR20150079836A (ko) | 2015-07-08 |
EP2911994B1 (de) | 2020-01-01 |
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CN104755445B (zh) | 2017-11-03 |
US9642247B2 (en) | 2017-05-02 |
DE102012110322B4 (de) | 2014-09-11 |
US20150230334A1 (en) | 2015-08-13 |
KR102034335B1 (ko) | 2019-10-18 |
TW201422562A (zh) | 2014-06-16 |
CN104755445A (zh) | 2015-07-01 |
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