TWI584957B - Laminated processing methods, the processing of the laminated board - Google Patents
Laminated processing methods, the processing of the laminated board Download PDFInfo
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- TWI584957B TWI584957B TW102145439A TW102145439A TWI584957B TW I584957 B TWI584957 B TW I584957B TW 102145439 A TW102145439 A TW 102145439A TW 102145439 A TW102145439 A TW 102145439A TW I584957 B TWI584957 B TW I584957B
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- plate
- reinforcing plate
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
- B24B9/10—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
- B24B9/10—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
- B24B9/105—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass using a template
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laminated Bodies (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Surface Treatment Of Glass (AREA)
- Joining Of Glass To Other Materials (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Description
本發明係關於一種積層板之加工方法及經加工之積層板。 The invention relates to a method for processing a laminated board and a processed laminated board.
要求液晶面板(LCD(Liquid Crystal Display,液晶顯示器))或電漿面板(PDP(Plasma Display Panel,電漿面板))、有機EL(Electroluminescence,電致發光)面板(OLED(Organic Light Emitting Diode,有機發光二極體))等顯示面板以及太陽電池、薄膜2次電池等電子裝置之薄型化及輕量化,該等電子裝置所用之基板向薄板化發展。若由於薄板化使基板之剛性變低,則基板之處理性會變差。此外,若由於薄板化使基板之厚度改變,則難以製造使用現有之設備之電子裝置。 Requires LCD panel (Liquid Crystal Display) or PDP (Plasma Display Panel), Organic EL (Electroluminescence) panel (OLED (Organic Light Emitting Diode) LEDs such as light-emitting diodes) and other electronic devices such as solar cells and thin-film secondary batteries are thinner and lighter, and substrates for these electronic devices are being thinned. If the rigidity of the substrate is lowered due to thinning, the rationality of the substrate is deteriorated. Further, if the thickness of the substrate is changed by thinning, it is difficult to manufacture an electronic device using the conventional device.
因此,提出於可剝離地與補強板結合之基板上形成特定之功能膜(例如,導電層)之後,將基板與補強板剝離之方法(例如參照專利文獻1)。根據該方法,可確保基板之處理性,且可製造使用現有之設備之薄型之電子裝置。 Therefore, a method of peeling a substrate and a reinforcing plate after forming a specific functional film (for example, a conductive layer) on a substrate to which the reinforcing plate is bonded and peeling is proposed (for example, refer to Patent Document 1). According to this method, it is possible to ensure the rationality of the substrate, and it is possible to manufacture a thin electronic device using the existing equipment.
[專利文獻1]日本專利特開2007-326358號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-326358
具有基板及可剝離地與該基板結合之補強板的積層板之端部以 提耐衝擊性為目的,而利用磨石研磨,並實施倒角。 An end portion of a laminate having a substrate and a reinforcing plate releasably bonded to the substrate For the purpose of impact resistance, grinding with a grindstone and chamfering.
於基板之利用磨石研磨而成之研磨面會產生微小裂痕,產生之微小裂痕到達基板與補強板之界面,從而基板出現缺口。 The polishing surface polished by the grindstone on the substrate generates minute cracks, and minute cracks are generated to reach the interface between the substrate and the reinforcing plate, so that the substrate is notched.
又,藉由將基板與補強板剝離之操作會使基板開裂。 Further, the substrate is cracked by the operation of peeling off the substrate and the reinforcing plate.
本發明係鑒於上述課題而成者,其目的在於提供一種可抑制研磨時之缺口及剝離時之裂痕的積層板之加工方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a method for processing a laminated board which can suppress cracks during polishing and cracks during peeling.
為解決上述課題,根據本發明之一態樣,提供一種積層板之加工方法,其係加工具有基板及可剝離地與該基板結合之補強板的積層板之方法,且具有利用磨石研磨上述積層板之端部之倒角加工步驟,上述基板和上述補強板之界面與上述基板之利用上述磨石研磨而成之研磨面所成之角大於26°且為30°以下。 In order to solve the above problems, according to an aspect of the present invention, a method for processing a laminated board is provided, which is a method of processing a laminated board having a substrate and a reinforcing sheet that is releasably bonded to the substrate, and has the above-described method of grinding the above by using a grindstone In the chamfering step of the end portion of the laminate, the angle between the interface between the substrate and the reinforcing plate and the polished surface of the substrate polished by the grindstone is greater than 26° and not more than 30°.
根據本發明,提供一種可抑制研磨時之缺口及剝離時之裂痕的積層板之加工方法。 According to the present invention, there is provided a method for processing a laminate which can suppress cracks during polishing and cracks during peeling.
10‧‧‧積層板 10‧‧‧Laminated boards
12‧‧‧基板 12‧‧‧Substrate
14‧‧‧補強板 14‧‧‧ reinforcing plate
15‧‧‧剝離膜 15‧‧‧Release film
16‧‧‧支持板 16‧‧‧Support board
30‧‧‧磨石 30‧‧‧Martstone
32‧‧‧研磨槽 32‧‧‧ Grinding trough
A‧‧‧基板之厚度 A‧‧‧thickness of the substrate
B‧‧‧補強板之厚度 B‧‧‧ Thickness of reinforcing plate
C‧‧‧支持板之厚度 C‧‧‧ Thickness of support plate
D‧‧‧剝離膜之厚度 D‧‧‧ peel film thickness
E‧‧‧補強板之突出尺寸 Outstanding dimensions of E‧‧‧ reinforcing plates
F‧‧‧積層板之研磨面之垂直部之於積層板之板厚方向之尺寸 F‧‧‧ Dimensions of the vertical part of the polished surface of the laminated board to the thickness direction of the laminated board
G‧‧‧力 G‧‧‧力
G1‧‧‧分力 G1‧‧‧
R‧‧‧曲率半徑 R‧‧‧ radius of curvature
θ‧‧‧角 Θ‧‧‧ corner
圖1係表示本發明之一實施例之積層板之加工方法的側視圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view showing a method of processing a laminated board according to an embodiment of the present invention.
圖2係表示本發明之一實施例之積層板之加工方法的俯視圖。 Fig. 2 is a plan view showing a method of processing a laminated board according to an embodiment of the present invention.
圖3係表示本發明之一實施例之於倒角加工步驟中自磨石作用於積層板之力的剖面圖。 Fig. 3 is a cross-sectional view showing the force of the self-grinding stone acting on the laminated plate in the chamfering step in an embodiment of the present invention.
以下參照圖式對實施方式進行說明。於各圖式中,對同一或相對應之構成附上同一或相對應之符號而省略說明。 Embodiments will be described below with reference to the drawings. In the drawings, the same or corresponding reference numerals are attached to the same or corresponding components, and the description is omitted.
圖1係表示本發明之一實施例之積層板之加工方法的側視圖。圖 2係表示本發明之一實施例之積層板之加工方法的俯視圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view showing a method of processing a laminated board according to an embodiment of the present invention. Figure 2 is a plan view showing a method of processing a laminated board according to an embodiment of the present invention.
首先,參照圖1對積層板10進行說明。例如如圖1所示,積層板10包括基板12及可剝離地與基板12結合之補強板14。積層板10以下述加工方法加工之後,可用於製品之製造。一個製品之製造時亦可使用複數塊積層板10。作為製品,例如可列舉顯示面板、太陽電池、薄膜2次電池等電子裝置。 First, the laminated board 10 will be described with reference to Fig. 1 . For example, as shown in FIG. 1, the laminate 10 includes a substrate 12 and a reinforcing plate 14 that is releasably bonded to the substrate 12. The laminate 10 can be used for the manufacture of articles after being processed by the following processing method. A plurality of laminated sheets 10 can also be used in the manufacture of a product. Examples of the product include electronic devices such as display panels, solar cells, and film secondary batteries.
基板12係成為製品之一部分者,於製品之製造步驟中,於基板12上形成有對應製品之種類之功能膜。亦可由複數層功能膜構成。 The substrate 12 is a part of the product, and in the manufacturing step of the product, a functional film corresponding to the type of the product is formed on the substrate 12. It can also be composed of a plurality of functional films.
基板12例如為玻璃基板、陶瓷基板、樹脂基板、金屬基板或半導體基板等。該等基板之中,較佳為玻璃基板。其原因在於,玻璃基板之耐化學藥品性、耐透濕性優異,且線膨脹係數較小。若基板12之線膨脹係數較大,則於熱處理時容易產生各種不良情況,例如使高溫下形成之功能膜冷卻至室溫時功能膜有時會變形。 The substrate 12 is, for example, a glass substrate, a ceramic substrate, a resin substrate, a metal substrate, or a semiconductor substrate. Among these substrates, a glass substrate is preferred. The reason for this is that the glass substrate is excellent in chemical resistance and moisture permeability resistance, and has a small coefficient of linear expansion. When the linear expansion coefficient of the substrate 12 is large, various defects are likely to occur during heat treatment. For example, when the functional film formed at a high temperature is cooled to room temperature, the functional film may be deformed.
作為玻璃基板之玻璃,例如可列舉無鹼玻璃、硼矽酸玻璃、鈉鈣玻璃、高矽玻璃、其他以氧化矽為主要成分之氧化物系玻璃等。較佳為氧化物系玻璃為根據氧化物換算之氧化矽之含量為40~90質量%之玻璃。根據製品之種類選擇玻璃基板之玻璃。例如,於液晶面板之情形時,使用實質上不含有鹼金屬成分之玻璃(無鹼玻璃)。 Examples of the glass of the glass substrate include alkali-free glass, borosilicate glass, soda lime glass, sorghum glass, and other oxide-based glass containing cerium oxide as a main component. The oxide-based glass is preferably a glass having a content of cerium oxide in an amount of 40 to 90% by mass based on the oxide. The glass of the glass substrate is selected according to the type of the product. For example, in the case of a liquid crystal panel, glass (alkali-free glass) which does not substantially contain an alkali metal component is used.
於基板12為玻璃基板之情形時,基板12之厚度A例如為0.3mm以下,更佳為0.1mm以下,進而較佳為0.05mm以下。又,於基板12為玻璃基板之情形時,就成形性之觀點而言,基板12之厚度A較佳為0.001mm以上。 When the substrate 12 is a glass substrate, the thickness A of the substrate 12 is, for example, 0.3 mm or less, more preferably 0.1 mm or less, still more preferably 0.05 mm or less. Moreover, when the substrate 12 is a glass substrate, the thickness A of the substrate 12 is preferably 0.001 mm or more from the viewpoint of moldability.
於進行將補強板14與基板12剝離之操作之前,使補強板14與基板12結合而對基板12進行補強。補強板14之厚度B可大於基板12之厚度A。於製品之製造步驟之中途,補強板14自基板12剝離,不成為製品之一部分。 Before the operation of peeling the reinforcing plate 14 from the substrate 12, the reinforcing plate 14 is bonded to the substrate 12 to reinforce the substrate 12. The thickness B of the reinforcing plate 14 may be greater than the thickness A of the substrate 12. In the middle of the manufacturing process of the product, the reinforcing plate 14 is peeled off from the substrate 12 and does not become a part of the product.
為防止因熱處理引起之翹曲或剝離,較佳為補強板14為與基板12之熱膨脹差較小者。於基板12為玻璃基板之情形時,較佳為補強板14為含有玻璃板者,基板12之玻璃與補強板14之玻璃為同種之玻璃。 In order to prevent warping or peeling due to heat treatment, it is preferable that the reinforcing plate 14 has a small difference in thermal expansion from the substrate 12. In the case where the substrate 12 is a glass substrate, it is preferable that the reinforcing plate 14 is a glass plate, and the glass of the substrate 12 and the glass of the reinforcing plate 14 are the same kind of glass.
補強板14例如含有可剝離地與基板12結合之剝離膜15及隔著剝離膜15而支持基板12之支持板16。剝離膜15與基板12藉由作用於該等之間之凡得瓦力等而可剝離地結合。剝離膜15可為樹脂膜、無機膜中之任一者。無機膜例如可為金屬氧化物膜。 The reinforcing plate 14 includes, for example, a release film 15 that is detachably bonded to the substrate 12 and a support plate 16 that supports the substrate 12 via the release film 15 . The release film 15 and the substrate 12 are releasably bonded by a van der Waals force or the like acting between the two. The release film 15 may be either a resin film or an inorganic film. The inorganic film may be, for example, a metal oxide film.
再者,雖然本實施例之補強板14係由剝離膜15及支持板16所構成,但亦可僅由支持板16構成且支持板16(例如玻璃板)與基板12(例如玻璃基板)直接結合。支持板16之與基板12接觸之面及基板12之與支持板16接觸之面可分別具有特定值以下之表面粗糙度,以使上述兩個面容易相互結合。又,亦可藉由於至少一個接觸面設置表面粗糙度不同之區域,而於支持板16與基板12之界面設有結合力不同之區域。從而剝離操作會變得容易。支持板16之與基板12接觸之面及基板12之與支持板16接觸之面的各者可為實施有提高表面之活性之處理(例如洗淨處理)者。 Further, although the reinforcing plate 14 of the present embodiment is composed of the release film 15 and the support plate 16, it may be constituted only by the support plate 16 and the support plate 16 (for example, a glass plate) and the substrate 12 (for example, a glass substrate) may be directly Combine. The surface of the support plate 16 that is in contact with the substrate 12 and the surface of the substrate 12 that is in contact with the support plate 16 may each have a surface roughness of a specific value or less so that the two faces are easily bonded to each other. Further, by providing at least one contact surface with a region having a different surface roughness, an interface having a different bonding force may be provided at the interface between the support plate 16 and the substrate 12. Thereby the peeling operation becomes easy. Each of the surface of the support plate 16 that is in contact with the substrate 12 and the surface of the substrate 12 that is in contact with the support plate 16 may be a process (for example, a cleaning process) in which the activity of the surface is increased.
再者,補強板14可為玻璃板與樹脂膜交替地積層而成者,可具有複數個支持板16及複數層樹脂膜。於此情形時,最外層之樹脂膜成為剝離膜。 Further, the reinforcing plate 14 may be formed by alternately laminating a glass plate and a resin film, and may have a plurality of support plates 16 and a plurality of resin films. In this case, the outermost resin film becomes a release film.
支持板16隔著剝離膜15而支持基板12。支持板16例如為玻璃板、陶瓷板、樹脂板、半導體板或金屬板等。於基板12為玻璃基板之情形時,支持板16較佳為玻璃板。另一方面,若支持板16為樹脂板或金屬板,則補強板14容易彎曲變形,故補強板14與基板12容易剝離。 The support plate 16 supports the substrate 12 via the release film 15 . The support plate 16 is, for example, a glass plate, a ceramic plate, a resin plate, a semiconductor plate, a metal plate, or the like. In the case where the substrate 12 is a glass substrate, the support plate 16 is preferably a glass plate. On the other hand, when the support plate 16 is a resin plate or a metal plate, the reinforcing plate 14 is easily bent and deformed, so that the reinforcing plate 14 and the substrate 12 are easily peeled off.
支持板16與基板12之平均線膨脹係數差(絕對值)係根據基板12之尺寸形狀等適當進行設定,例如較佳為35×10-7/℃以下。於此處,所謂「平均線膨脹係數」係指於50℃~300℃之溫度範圍內之平均線膨 脹係數(JIS R 3102)。 The difference (absolute value) of the average linear expansion coefficient between the support plate 16 and the substrate 12 is appropriately set depending on the size and shape of the substrate 12, and is preferably, for example, 35 × 10 -7 / ° C or less. Here, the "average linear expansion coefficient" means an average linear expansion coefficient (JIS R 3102) in a temperature range of 50 ° C to 300 ° C.
於支持板16為玻璃板之情形時,支持板16之厚度C例如為0.7mm以下。又,於支持板16為玻璃板之情形時,為了對基板12進行補強,較佳為支持板16之厚度C為0.4mm以上。 In the case where the support plate 16 is a glass plate, the thickness C of the support plate 16 is, for example, 0.7 mm or less. Further, in the case where the support plate 16 is a glass plate, in order to reinforce the substrate 12, it is preferable that the thickness C of the support plate 16 is 0.4 mm or more.
如圖1所示,支持板16之外形與剝離膜15之外形相同或較剝離膜15之外形更大,從而支持板16可支持剝離膜15之整體。 As shown in FIG. 1, the outer shape of the support plate 16 is the same as or smaller than the outer shape of the release film 15, so that the support plate 16 can support the entirety of the release film 15.
在進行將剝離膜15與基板12剝離之操作之前,剝離膜15可防止基板12之錯位。剝離膜15係藉由剝離操作而輕易地自基板12剝離。從而可防止因剝離操作引起之基板12之破損。 The release film 15 prevents misalignment of the substrate 12 before the operation of peeling the release film 15 from the substrate 12 is performed. The release film 15 is easily peeled off from the substrate 12 by a peeling operation. Thereby, damage of the substrate 12 due to the peeling operation can be prevented.
剝離膜15形成為其與支持板16之結合力較其與基板12之結合力而言相對地變高。可藉由剝離操作防止積層板10於預計外之位置(剝離膜15與支持板16之間)剝離。 The release film 15 is formed such that its bonding force with the support plate 16 is relatively higher than that of the bonding force with the substrate 12. The peeling operation can prevent the laminated board 10 from being peeled off at an unexpected position (between the release film 15 and the support sheet 16).
剝離膜15之樹脂並無特別限定。例如,作為剝離膜15之樹脂,可列舉丙烯酸樹脂、聚烯烴樹脂、聚胺基甲酸酯樹脂、聚醯亞胺樹脂、聚矽氧樹脂、聚醯亞胺聚矽氧樹脂等。亦可將幾種樹脂混合而使用。其中,就耐熱性或剝離性之觀點而言,較佳為聚矽氧樹脂、聚醯亞胺聚矽氧樹脂。 The resin of the release film 15 is not particularly limited. For example, examples of the resin of the release film 15 include an acrylic resin, a polyolefin resin, a polyurethane resin, a polyimide resin, a polyoxymethylene resin, a polyimide, a polyoxymethylene resin, and the like. Several resins can also be used in combination. Among them, from the viewpoint of heat resistance or peelability, a polydecene oxide resin or a polyamidene polyimide resin is preferable.
雖然關於剝離膜15之厚度D並無特別限定,但於剝離膜15為樹脂膜之情形時,其厚度較佳為1μm~50μm,更佳為4μm~20μm。藉由將剝離膜15之厚度D設為1μm以上,於氣泡或異物混入至剝離膜15與基板12之間之情形時剝離膜15可變形以吸收氣泡或異物之厚度。另一方面,若剝離膜15之厚度D為50μm以下,則可縮短剝離膜15之形成時間,進而不會超出需要地使用剝離膜15之樹脂,故較為經濟。 The thickness D of the release film 15 is not particularly limited. However, when the release film 15 is a resin film, the thickness thereof is preferably from 1 μm to 50 μm, more preferably from 4 μm to 20 μm. By setting the thickness D of the release film 15 to 1 μm or more, the release film 15 can be deformed to absorb the thickness of bubbles or foreign matter when bubbles or foreign matter are mixed between the release film 15 and the substrate 12. On the other hand, when the thickness D of the release film 15 is 50 μm or less, the formation time of the release film 15 can be shortened, and the resin of the release film 15 can be used without exceeding the necessity, which is economical.
較佳為如圖1所示,剝離膜15之外形與基板12之外形相同或較基板12之外形更大,從而剝離膜15可支持基板12之整體。若剝離膜15之外形較基板12之外形更大,則藉由使剝離膜15之自基板12露出之部分 彎曲變形而將補強板14與基板12之剝離緩緩地進行,從而使剝離順利地進行。 Preferably, as shown in FIG. 1, the outer shape of the release film 15 is the same as or larger than the outer shape of the substrate 12, so that the release film 15 can support the entirety of the substrate 12. If the shape of the release film 15 is larger than that of the substrate 12, the portion of the release film 15 exposed from the substrate 12 is exposed. The bending deformation and the peeling of the reinforcing plate 14 and the substrate 12 are gradually performed, and the peeling is smoothly performed.
再者,剝離膜15亦可包括複數種樹脂膜。於此情形時,「剝離膜之厚度」意指全部之樹脂膜之合計之厚度。 Further, the release film 15 may also include a plurality of resin films. In this case, the "thickness of the release film" means the total thickness of all the resin films.
繼而,對積層板10之製造方法進行說明。作為積層板10之製造方法,例如有下述之(1)~(3)之方法。 Next, a method of manufacturing the laminated board 10 will be described. As a method of manufacturing the laminated board 10, for example, there are the following methods (1) to (3).
(1)於支持板16上塗佈具有流動性之樹脂組合物,使其硬化而形成剝離膜15之後,使基板12壓接於剝離膜15上。樹脂組合物硬化時,由於樹脂組合物與支持板16相互作用,故支持板16與剝離膜15之結合力較剝離膜15與基板12之間之結合力而言更容易變高。 (1) A resin composition having fluidity is applied onto the support sheet 16 to be cured to form the release film 15, and then the substrate 12 is pressure-bonded to the release film 15. When the resin composition is cured, since the resin composition interacts with the support sheet 16, the bonding force between the support sheet 16 and the release film 15 is more likely to be higher than the bonding force between the release film 15 and the substrate 12.
(2)於特定之基材上塗佈具有流動性之樹脂組合物,使其硬化而形成剝離膜15之後,使剝離膜15自特定之基材剝離,並進行壓接,使上述剝離膜以膜之形態夾於基板12與支持板16之間。於剝離膜15經壓接後,對基板12之結合力較低,對支持板16之結合力較高之情形較為有效。亦可於與剝離膜15接觸之前,對基板12或支持板16之表面進行表面處理,從而使與剝離膜15之壓接後之結合力存在差異。 (2) After applying a fluid resin composition to a specific substrate and curing it to form a release film 15, the release film 15 is peeled off from a specific substrate, and pressure-bonding is performed to make the release film The form of the film is sandwiched between the substrate 12 and the support plate 16. After the release film 15 is pressure-bonded, the bonding strength to the substrate 12 is low, and the bonding strength of the support plate 16 is high. The surface of the substrate 12 or the support plate 16 may be surface-treated before contact with the release film 15, so that the bonding force after the pressure-bonding with the release film 15 is different.
(3)於基板12與支持板16之間夾有樹脂組合物,使該樹脂組合物硬化而形成剝離膜15。於樹脂組合物硬化後,對基板12之結合力較低,對支持板16之結合力較高之情形較為有效。亦可於與樹脂組合物接觸之前,對基板12或支持板16之表面進行表面處理,從而使樹脂組合物於硬化後之結合力存在差異。 (3) A resin composition is interposed between the substrate 12 and the support plate 16, and the resin composition is cured to form the release film 15. After the resin composition is hardened, the bonding strength to the substrate 12 is low, and it is effective in the case where the bonding strength of the support sheet 16 is high. The surface of the substrate 12 or the support plate 16 may be surface-treated before being contacted with the resin composition, so that the bonding strength of the resin composition after hardening is different.
可於潔淨度較高之環境下實施上述(1)及(2)之方法中之壓接。雖然壓接時之周邊之氣壓亦可為大氣壓,但為了抑制空氣之侵入,較佳為上述周邊之氣壓為低於大氣壓之負壓。作為壓接之方式,有輥式、按壓式等。雖然壓接溫度亦可為高於室溫之溫度,但為了防止作為剝離膜15之樹脂膜之劣化,以室溫為佳。 The crimping in the methods (1) and (2) above can be carried out in a highly clean environment. Although the air pressure around the pressure contact may be atmospheric pressure, in order to suppress the intrusion of air, it is preferable that the peripheral pressure is a negative pressure lower than atmospheric pressure. As a method of crimping, there are a roll type, a push type, and the like. Although the pressure bonding temperature may be a temperature higher than room temperature, in order to prevent deterioration of the resin film as the release film 15, room temperature is preferred.
成為剝離膜15之樹脂組合物亦可為利用縮合反應型、加成反應型、紫外線硬化型、電子束硬化型中之任一方法進行硬化者。加成反應型之樹脂組合物容易硬化,剝離性優異,耐熱性亦較高,因此尤佳。 The resin composition to be the release film 15 may be cured by any of a condensation reaction type, an addition reaction type, an ultraviolet curing type, and an electron beam curing type. The addition reaction type resin composition is easily cured, and is excellent in peelability and high in heat resistance.
又,雖然成為剝離膜15之樹脂組合物可為以溶劑型、乳液型、無溶劑型中之任一形態而使用者,但就生產性、環境特性之觀點而言,較佳為無溶劑型。又,無溶劑型之樹脂組合物不含可能會於硬化時起泡之溶劑,故可獲得缺陷較少之剝離膜15。 In addition, the resin composition to be the release film 15 may be one of a solvent type, an emulsion type, and a solventless type, but it is preferably a solvent-free type from the viewpoint of productivity and environmental characteristics. . Further, the solvent-free resin composition does not contain a solvent which may foam during curing, so that the release film 15 having less defects can be obtained.
作為硬化之方法為加成反應型且使用形態為無溶劑型之聚矽氧樹脂組合物,有含具有乙烯基之直鏈狀聚有機矽氧烷及具有氫矽烷基之甲基氫聚矽氧烷者。該聚矽氧樹脂組合物於存在鉑觸媒之情況下經加熱硬化,成為聚矽氧樹脂膜。 The hardening method is an addition reaction type and uses a solvent-free polyoxyxylene resin composition, and has a linear polyorganosiloxane having a vinyl group and a methylhydrogenpolyoxy group having a hydroquinone group. Alkane. The polyoxyxylene resin composition is cured by heating in the presence of a platinum catalyst to form a polyoxynoxide resin film.
成為剝離膜15之樹脂組合物之塗佈方法例如有噴塗法、模具塗佈法、旋轉塗佈法、浸塗法、輥式塗佈法、棒式塗佈法、網版印刷法、凹版塗佈法等。根據樹脂組合物之種類適當地選擇該等塗佈方法。 Examples of the coating method of the resin composition to be the release film 15 include a spray coating method, a die coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method. Bufa and so on. These coating methods are appropriately selected depending on the kind of the resin composition.
根據樹脂組合物之種類等適當地選擇成為剝離膜15之樹脂組合物之塗佈量。例如,於樹脂組合物之種類為上述聚矽氧樹脂組合物之情形時,塗佈量較佳為1g/m2~100g/m2,更佳為5g/m2~20g/m2。 The coating amount of the resin composition to be the release film 15 is appropriately selected depending on the type of the resin composition or the like. For example, in the case where the type of the resin composition is the above polyoxyxylene resin composition, the coating amount is preferably from 1 g/m 2 to 100 g/m 2 , more preferably from 5 g/m 2 to 20 g/m 2 .
根據樹脂組合物之種類等適當地選擇成為剝離膜15之樹脂組合物之硬化條件。例如,作為上述聚矽氧樹脂組合物,於相對於合計量為100質量份之直鏈狀聚有機矽氧烷與甲基氫聚矽氧烷而調配2質量份之鉑系觸媒之情形時,於大氣中進行加熱之溫度為50℃~250℃,較佳為100℃~200℃。又,此情形之反應時間設為5分鐘~60分鐘,較佳為設為10分鐘~30分鐘。只要樹脂組合物之硬化條件在上述反應時間之範圍及反應溫度之範圍內,則聚矽氧樹脂之氧化分解不會同時發 生,低分子量之聚矽氧成分不會生成,補強板與基板剝離時樹脂不易殘留於基板側。 The curing conditions of the resin composition to be the release film 15 are appropriately selected depending on the type of the resin composition and the like. For example, when the amount of the platinum-based catalyst is 2 parts by mass based on 100 parts by mass of the linear polyorganosiloxane and the methylhydropolysiloxane. The temperature for heating in the atmosphere is 50 ° C to 250 ° C, preferably 100 ° C to 200 ° C. Further, the reaction time in this case is set to 5 minutes to 60 minutes, preferably 10 minutes to 30 minutes. As long as the curing conditions of the resin composition are within the range of the above reaction time and the reaction temperature, the oxidative decomposition of the polyoxynoxy resin will not occur simultaneously. When the reinforcing plate and the substrate are peeled off, the resin does not easily remain on the substrate side.
繼而,再次參照圖1及圖2對所製造之積層板之加工方法進行說明。如圖1及圖2所示,積層板之加工方法具有利用磨石30研磨積層板10之端部的倒角加工步驟。 Next, a method of processing the produced laminated board will be described with reference to FIGS. 1 and 2 again. As shown in FIGS. 1 and 2, the method of processing a laminated board has a chamfering processing step of polishing the end portion of the laminated board 10 by the grindstone 30.
磨石30為圓板狀,且於磨石30之外周面形成有環狀之研磨槽32。研磨槽32之剖面形狀可為例如大致梯形,亦可為大致等腰梯形。研磨槽32之槽寬朝向磨石30之徑向內部而緩緩地變窄。研磨槽32之底面與研磨槽32之各側面之交界部朝向磨石30之徑向內部而形成凸起之曲面狀。 The grindstone 30 has a disk shape, and an annular grinding groove 32 is formed on the outer peripheral surface of the grindstone 30. The cross-sectional shape of the polishing groove 32 may be, for example, a substantially trapezoidal shape or a substantially isosceles trapezoid. The groove width of the grinding groove 32 gradually narrows toward the radially inner portion of the grindstone 30. The boundary between the bottom surface of the polishing groove 32 and each side surface of the polishing groove 32 faces the radially inner portion of the grindstone 30 to form a convex curved surface.
於倒角加工步驟中,首先,如圖1所示,以積層板10之板厚方向相對於磨石30之中心線平行之方式安置積層板10。於此狀態下,一面以磨石30之中心線為中心使磨石30旋轉,一面使研磨槽32之壁面抵壓於積層板10之端部,從而利用磨石30研磨積層板10之端部。此時,於研磨槽32之兩個側面夾著積層板10之端部而進行磨削之同時,研磨槽32之底面磨削積層板10之端部。藉由研磨槽32之兩個側面夾著積層板10之端部可防止積層板10與磨石30之錯位。於倒角加工步驟中,如圖2所示,使磨石30與積層板10相對地移動而對積層板10之外周之至少一部分進行研磨。 In the chamfering processing step, first, as shown in FIG. 1, the laminated plate 10 is placed in such a manner that the thickness direction of the laminated plate 10 is parallel to the center line of the grindstone 30. In this state, the grinding stone 30 is rotated around the center line of the grindstone 30, and the wall surface of the grinding groove 32 is pressed against the end portion of the laminated plate 10, and the end portion of the laminated plate 10 is polished by the grindstone 30. . At this time, the end portions of the laminated plate 10 are ground on the both side faces of the polishing groove 32, and the bottom surface of the laminated plate 10 is ground by the bottom surface of the polishing groove 32. The misalignment of the laminated plate 10 and the grindstone 30 can be prevented by sandwiching the ends of the laminated plate 10 on both side faces of the grinding groove 32. In the chamfering processing step, as shown in FIG. 2, the grindstone 30 and the laminated plate 10 are moved relative to each other, and at least a part of the outer periphery of the laminated plate 10 is polished.
圖3係表示本發明之一實施例之倒角加工步驟中自磨石作用於基板之力的剖面圖。如圖3所示,於倒角加工步驟中,力G自磨石30作用於基板12。該力G沿著與磨石30之中心線(即積層板10之板厚方向)垂直之方向起作用。該力G之中,由於相對於研磨槽32之壁面而垂直之分力G1,於基板12之研磨面可能會產生微小裂痕。基板12和補強板14之界面與基板12之研磨面所成之角θ越小,可能產生微小裂痕之分力G1越小。 Fig. 3 is a cross-sectional view showing the force of the self-grinding stone acting on the substrate in the chamfering step in the embodiment of the present invention. As shown in FIG. 3, in the chamfering step, the force G acts on the substrate 12 from the grindstone 30. This force G acts in a direction perpendicular to the center line of the grindstone 30 (that is, the plate thickness direction of the laminated plate 10). Among the forces G, microscopic cracks may occur on the polished surface of the substrate 12 due to the component force G1 perpendicular to the wall surface of the polishing groove 32. The smaller the angle θ between the interface between the substrate 12 and the reinforcing plate 14 and the polished surface of the substrate 12, the smaller the component force G1 at which minute cracks may occur.
於本實施例中,基板12和補強板14之界面與基板12之研磨面所成之角θ為30°以下,從而可能於基板12之研磨面產生微小裂痕之分力G1充分小,從而基板12不易產生缺口。 In the present embodiment, the angle θ between the interface between the substrate 12 and the reinforcing plate 14 and the polished surface of the substrate 12 is 30° or less, so that the component G1 which may cause micro cracks on the polished surface of the substrate 12 is sufficiently small, so that the substrate 12 is not easy to create a gap.
可以基板12與補強板14之界面相對於基板12之研磨面傾斜之方式,不利用研磨槽32之底面而如圖1所示利用研磨槽32之一個側面進行研磨。於此情形時,基板12之研磨面僅由平坦之部分構成。 The interface between the substrate 12 and the reinforcing plate 14 may be polished by one side of the polishing groove 32 as shown in FIG. 1 without using the bottom surface of the polishing groove 32 so as to be inclined with respect to the polishing surface of the substrate 12. In this case, the polished surface of the substrate 12 is composed only of a flat portion.
再者,於本實施例中,雖然基板12與補強板14之界面利用研磨槽32之一個側面進行研磨,但亦可利用研磨槽32之一個側面與研磨槽32之底面之曲面狀之交界部進行研磨。於此情形時,基板12之研磨面包括平坦之部分及彎曲之部分。只要該彎曲之部分之切線與基板12和補強板14之界面所成之角為30°以下即可。 Furthermore, in the present embodiment, although the interface between the substrate 12 and the reinforcing plate 14 is polished by one side of the polishing groove 32, a curved surface portion of one side of the polishing groove 32 and the bottom surface of the polishing groove 32 may be used. Grinding. In this case, the abrasive surface of the substrate 12 includes a flat portion and a curved portion. The angle formed by the tangent to the curved portion and the interface between the substrate 12 and the reinforcing plate 14 may be 30 or less.
又,基板12和補強板14之界面與基板12之研磨面所成之角θ大於26°。由於基板12和補強板14之界面與基板12之研磨面相交之部分並不過尖,故於為了將基板12與補強板14剝離而於基板12與補強板14之間***薄刀時,基板12不易產生缺口。 Further, the angle θ between the interface between the substrate 12 and the reinforcing plate 14 and the polished surface of the substrate 12 is greater than 26°. Since the interface between the substrate 12 and the reinforcing plate 14 and the polishing surface of the substrate 12 is not too sharp, when the thin blade is inserted between the substrate 12 and the reinforcing plate 14 in order to peel the substrate 12 from the reinforcing plate 14, the substrate 12 is inserted. Not easy to create gaps.
積層板10之利用磨石30研磨之研磨面(以下簡稱為「積層板10之研磨面」)具有例如積層板10之分別自其正面及背面傾斜地延伸之傾斜部、積層板10之相對於其正面及背面垂直之垂直部,及形成於各傾斜部與垂直部之間之曲面部。 The polished surface of the laminated plate 10 polished by the grindstone 30 (hereinafter simply referred to as "the polished surface of the laminated board 10") has, for example, an inclined portion of the laminated board 10 which is inclined obliquely from the front surface and the back surface thereof, and the laminated board 10 is opposed thereto. a vertical portion perpendicular to the front surface and the back surface, and a curved surface portion formed between each of the inclined portion and the vertical portion.
只要經加工之積層板10之自其正面傾斜地延伸之傾斜部與經加工之積層板10之自其背面傾斜地延伸之傾斜部相對於經加工之積層板10之正面與背面之間之中心面對稱即可。 As long as the inclined portion of the processed laminated plate 10 extending obliquely from the front surface thereof and the inclined portion of the processed laminated plate 10 extending obliquely from the back surface thereof are symmetrical with respect to the center plane between the front surface and the back surface of the processed laminated plate 10 Just fine.
經加工之積層板10之研磨面之曲面部之剖面形狀為朝向磨石30之徑向內部而凸起之形狀,例如為圓弧狀。經加工之積層板10之研磨面之曲面部之曲率半徑R例如為0.05mm~0.20mm。 The cross-sectional shape of the curved surface portion of the polished surface of the processed laminated plate 10 is a shape that is convex toward the radially inner portion of the grindstone 30, and is, for example, an arc shape. The curvature radius R of the curved surface portion of the polished surface of the processed laminated plate 10 is, for example, 0.05 mm to 0.20 mm.
經加工之積層板10之研磨面之垂直部於經加工之積層板10之板 厚方向之尺寸F例如為0.05mm~0.30mm。 The vertical portion of the polished surface of the processed laminate 10 is on the plate of the processed laminate 10 The dimension F in the thick direction is, for example, 0.05 mm to 0.30 mm.
另外,關於經加工之積層板10,有時使補強板14朝下而置於平台上,與設於平台上之定位塊抵接。 Further, regarding the processed laminated board 10, the reinforcing plate 14 may be placed on the platform with the reinforcing plate 14 facing downward, and may be in contact with the positioning block provided on the platform.
於本實施例中,以經加工之積層板10之板厚方向來看,補強板14較基板12更向外突出,基板12不與定位塊接觸,故基板12不易破損。補強板14之突出尺寸E例如為0.05mm~0.30mm。 In the present embodiment, the reinforcing plate 14 protrudes more outward than the substrate 12 in the direction of the thickness of the processed laminated plate 10. The substrate 12 is not in contact with the positioning block, so that the substrate 12 is not easily damaged. The protruding dimension E of the reinforcing plate 14 is, for example, 0.05 mm to 0.30 mm.
繼而,對使用經加工之積層板10之電子裝置之製造方法進行說明。電子裝置之製造方法可具有於經加工之積層板10之基板12上形成功能膜之步驟及將形成有功能膜之基板12與補強板14剝離之步驟。 Next, a method of manufacturing an electronic device using the processed laminate 10 will be described. The manufacturing method of the electronic device may have a step of forming a functional film on the substrate 12 of the processed laminated board 10 and a step of peeling off the substrate 12 on which the functional film is formed and the reinforcing plate 14.
功能膜之形成時有時使用微影技術或蝕刻技術並使用抗蝕液。有時抗蝕液會擴散至經加工之積層板10之研磨面。 When a functional film is formed, a lithography technique or an etching technique is sometimes used and a resist liquid is used. Sometimes the resist liquid spreads to the polished surface of the processed laminate 10.
本實施例之經加工之積層板10之研磨面於基板12與補強板14之界面附近無缺口,故容易除去抗蝕劑之殘渣。殘渣於熱處理過程中會成為揚塵之起源,故藉由減少殘渣而提高電子裝置之良率。 The polished surface of the processed laminated board 10 of the present embodiment has no gap near the interface between the substrate 12 and the reinforcing plate 14, so that the residue of the resist is easily removed. The residue becomes the origin of dust during the heat treatment process, so the yield of the electronic device is improved by reducing the residue.
將基板12與補強板14剝離係藉由如下方法進行,例如,於基板12與補強板14之間***薄刀,於形成成為剝離起點之間隙之後,一面平坦地保持基板12,一面使補強板14自剝離起點側朝向相反側而依序彎曲變形。 The peeling of the substrate 12 and the reinforcing plate 14 is performed by, for example, inserting a thin blade between the substrate 12 and the reinforcing plate 14, and after forming the gap which is the starting point of the peeling, the substrate 12 is held flat while the reinforcing plate is held. 14 is bent and deformed in order from the starting point side of the peeling toward the opposite side.
繼而,對作為電子裝置之液晶面板之製造方法進行說明。液晶面板之製造方法具有例如TFT(Thin Film Transistor,薄膜電晶體)基板製作步驟、CF(Color Filter,彩色濾光片)基板製作步驟、裝配步驟及剝離步驟。 Next, a method of manufacturing a liquid crystal panel as an electronic device will be described. The method of manufacturing a liquid crystal panel includes, for example, a TFT (Thin Film Transistor) substrate fabrication step, a CF (Color Filter) substrate fabrication step, an assembly step, and a peeling step.
於TFT基板製作步驟中,於經加工之積層板10之基板12上形成薄膜電晶體(TFT)等而製作TFT基板。TFT基板之製作時使用微影技術或蝕刻技術且使用抗蝕液。 In the TFT substrate fabrication step, a thin film transistor (TFT) or the like is formed on the substrate 12 of the processed laminate 10 to form a TFT substrate. The TFT substrate is fabricated using a lithography technique or an etching technique and a resist liquid is used.
於CT基板製作步驟中,於經加工之另一積層板10之基板12上形 成透明導電膜或彩色濾光片(CF)等而製作CF基板。CF基板之製作時使用微影技術且使用抗蝕液。 In the CT substrate fabrication step, on the substrate 12 of another processed laminate 10 A CF substrate is produced by forming a transparent conductive film or a color filter (CF). In the production of a CF substrate, a lithography technique is used and a resist liquid is used.
裝配步驟具有將液晶材料密封於TFT基板與CF基板之間之步驟。作為向TFT基板與CF基板之間注入液晶材料之方法,有減壓注入法或滴加注入法。 The assembly step has a step of sealing the liquid crystal material between the TFT substrate and the CF substrate. As a method of injecting a liquid crystal material between a TFT substrate and a CF substrate, there are a pressure reduction injection method or a dropping injection method.
於減壓注入法中,例如,首先藉由使TFT基板與CF基板隔著密封材料及間隔材料而貼合從而製作大型面板。將製作而成之大型面板切割為複數個單元。繼而,將各單元之內部抽真空,自設於各單元之側面之注入孔向各單元之內部注入液晶材料之後,對注入孔進行密封。繼而,藉由將偏光板貼於各單元而製造液晶面板。 In the vacuum injection method, for example, a large panel is produced by first bonding a TFT substrate and a CF substrate with a sealing material and a spacer. The large panel produced is cut into a plurality of units. Then, the inside of each unit was evacuated, and the injection hole was sealed by injecting a liquid crystal material into the inside of each unit from the injection holes provided on the side faces of the respective units. Then, a liquid crystal panel was manufactured by attaching a polarizing plate to each unit.
於滴加注入法中,例如,首先向TFT基板及CF基板中之任一者滴加液晶材料,繼而,藉由使TFT基板與CF基板隔著密封材料及間隔材料而貼合從而製作大型面板。將製作而成之大型面板切割為複數個單元。繼而,藉由將偏光板貼於各單元而製造液晶面板。 In the dropping method, for example, first, a liquid crystal material is dropped onto any of the TFT substrate and the CF substrate, and then the TFT substrate and the CF substrate are bonded together via a sealing material and a spacer material to form a large panel. . The large panel produced is cut into a plurality of units. Then, a liquid crystal panel was manufactured by attaching a polarizing plate to each unit.
於剝離步驟中,將基板12與補強板14剝離。剝離步驟可於TFT基板製作步驟及CF基板製作步驟之後、裝配步驟之前或裝配步驟之中途或裝配步驟之後進行。 In the peeling step, the substrate 12 and the reinforcing plate 14 are peeled off. The stripping step can be performed after the TFT substrate fabrication step and the CF substrate fabrication step, before the assembly step, or during the assembly step or after the assembly step.
例如,於利用減壓注入法之裝配步驟之中途進行剝離步驟之情形時,剝離步驟可於大型面板之製作後、大型面板之切割前,或於液晶材料之封入後、偏光板之貼附前進行。 For example, in the case where the peeling step is performed in the middle of the assembly step by the reduced pressure injection method, the peeling step may be performed after the production of the large panel, before the cutting of the large panel, or after the sealing of the liquid crystal material or before the attachment of the polarizing plate. get on.
又,於利用滴加注入法之裝配步驟之中途進行剝離步驟之情形時,剝離步驟可於大型面板之製作後、大型面板之切割前,或於大型面板之切割後、偏光板之貼附前進行。 Further, in the case where the peeling step is performed in the middle of the assembly step by the dropping injection method, the peeling step may be performed after the production of the large panel, before the cutting of the large panel, or after the cutting of the large panel or before the attachment of the polarizing plate. get on.
繼而,對作為電子裝置之有機EL面板(OLED)之製造方法進行說明。有機EL面板之製造方法例如具有有機EL元件形成步驟、貼合步驟及剝離步驟。 Next, a method of manufacturing an organic EL panel (OLED) as an electronic device will be described. The manufacturing method of the organic EL panel has, for example, an organic EL element forming step, a bonding step, and a peeling step.
於有機EL元件形成步驟中,於經加工之積層板10之基板12上形成有機EL元件。有機EL元件例如包括透明電極層、電洞傳輸層、發光層、電子傳輸層等。有機EL元件之形成時使用光微影技術且使用抗蝕液。 In the organic EL element forming step, an organic EL element is formed on the substrate 12 of the processed laminated board 10. The organic EL element includes, for example, a transparent electrode layer, a hole transport layer, a light-emitting layer, an electron transport layer, and the like. In the formation of an organic EL element, a photolithography technique is used and a resist liquid is used.
於貼合步驟中,使形成有機EL元件之基板與對向基板貼合。可將形成有機EL元件之基板切割為複數個單元,且使各單元與對向基板貼合。 In the bonding step, the substrate on which the organic EL element is formed is bonded to the counter substrate. The substrate on which the organic EL element is formed can be diced into a plurality of cells, and each cell can be bonded to the counter substrate.
於剝離步驟中,將基板12與補強板14剝離。關於剝離步驟,例如可於有機EL元件形成步驟之後、貼合步驟之前或貼合步驟之中途或貼合步驟之後進行。 In the peeling step, the substrate 12 and the reinforcing plate 14 are peeled off. The peeling step can be performed, for example, after the organic EL element forming step, before the bonding step, or in the middle of the bonding step, or after the bonding step.
繼而,對作為電子裝置之太陽電池之製造方法進行說明。太陽電池之製造方法具有太陽電池元件形成步驟及剝離步驟。 Next, a method of manufacturing a solar cell as an electronic device will be described. The solar cell manufacturing method has a solar cell element forming step and a peeling step.
於太陽電池元件形成步驟中,於經加工之積層板10之基板12上形成太陽電池元件。太陽電池元件例如包括透明電極層、半導體層等。太陽電池元件之形成時使用光微影技術且使用抗蝕液。 In the solar cell element forming step, solar cell elements are formed on the substrate 12 of the processed laminate 10. The solar cell element includes, for example, a transparent electrode layer, a semiconductor layer, and the like. Photolithography is used in the formation of solar cell elements and a resist solution is used.
於剝離步驟中,將基板12與補強板14剝離。關於剝離步驟,例如可於太陽電池元件形成步驟之後進行。 In the peeling step, the substrate 12 and the reinforcing plate 14 are peeled off. The peeling step can be performed, for example, after the solar cell element forming step.
於試驗例1~4中,準備如下者作為積層板:藉由於支持板上塗佈具有流動性之樹脂組合物,使其硬化而形成剝離膜,並使玻璃基板壓接於所形成之剝離膜上而成。試驗例1~4之積層板係設為相同之構成。 In Test Examples 1 to 4, a laminate was prepared as follows: a resin composition having fluidity was applied to a support plate to be cured to form a release film, and the glass substrate was pressure-bonded to the formed release film. Made up. The laminated plates of Test Examples 1 to 4 have the same configuration.
使用旭硝子公司製造之無鹼玻璃板(920mm×730mm×厚度0.5mm)作為支持板之玻璃板。 An alkali-free glass plate (920 mm × 730 mm × thickness 0.5 mm) manufactured by Asahi Glass Co., Ltd. was used as the glass plate of the support plate.
使用100質量份之無溶劑加成反應型聚矽氧(信越聚矽氧(Shin- Etsu Silicone)公司製造,KNS-320A)與2質量份之鉑系觸媒(信越聚矽氧公司製造,CAT-PL-56)之混合物作為樹脂組合物。藉由利用模具塗佈機將該混合物塗佈於玻璃板上並於220℃下進行30分鐘熱處理而形成剝離膜(920mm×730mm×厚度8μm)。 Using 100 parts by mass of solvent-free addition reaction type polyoxane (Shin-e-oxygen (Shin- A mixture of 2 parts by mass of a platinum-based catalyst (manufactured by Shin-Etsu Chemical Co., Ltd., CAT-PL-56) was produced as a resin composition by Etsu Silicone Co., Ltd., KNS-320A. The release film (920 mm × 730 mm × thickness 8 μm) was formed by applying the mixture to a glass plate by a die coater and heat-treating at 220 ° C for 30 minutes.
使用旭硝子公司製造之無鹼玻璃板(920mm×730mm×厚度0.1mm)作為玻璃基板。 As the glass substrate, an alkali-free glass plate (920 mm × 730 mm × thickness 0.1 mm) manufactured by Asahi Glass Co., Ltd. was used.
於試驗例1~4中,利用磨石將大致矩形之積層板之4邊之各個研磨成表1所示之尺寸,並利用顯微鏡檢查玻璃基板是否產生缺口。使用平均粒徑為30μm之金剛石研磨粒作為磨石之研磨粒。又,磨石之研磨槽之剖面形狀製成大致等腰梯形。將玻璃基板之研磨面未產生長度為0.03mm以上之缺口之情形記為「○」,將玻璃基板之研磨面產生長度為0.03mm以上且未達0.05mm之缺口之情形記為「△」,將玻璃基板之研磨面產生長度為0.05mm以上之缺口之情形記為「×」。 In Test Examples 1 to 4, each of the four sides of the substantially rectangular laminated plate was polished to the size shown in Table 1 by a grindstone, and it was examined by a microscope whether or not a notch was formed in the glass substrate. Diamond abrasive grains having an average particle diameter of 30 μm were used as the abrasive grains of the grindstone. Further, the cross-sectional shape of the grinding groove of the grindstone is substantially an isosceles trapezoid. A case where a notch having a length of 0.03 mm or more is not formed on the polished surface of the glass substrate is referred to as "○", and a case where the length of the polished surface of the glass substrate is 0.03 mm or more and not less than 0.05 mm is referred to as "Δ". A case where a notch having a length of 0.05 mm or more was formed on the polished surface of the glass substrate was referred to as "x".
繼而,於試驗例1~4中,於使補強板朝下而將積層板置於平台之狀態下,使積層板以100mm/s之速度與設於平台上之定位塊相碰撞,並利用顯微鏡檢查玻璃基板之上表面與研磨面之角部是否產生缺口。使定位塊之與積層板碰撞之面相對於平台上表面垂直。將玻璃基板之上表面與研磨面之角部未產生長度為0.03mm以上之缺口之情形記為「○」,將玻璃基板之上表面與研磨面之角部產生長度為0.03mm以上且未達0.05mm之缺口之情形記為「△」,將玻璃基板之上表面與研磨面之角部產生長度為0.05mm以上之缺口之情形記為「×」。 Then, in Test Examples 1 to 4, the laminated plate was placed on the platform with the reinforcing plate facing downward, and the laminated plate was collided with the positioning block provided on the platform at a speed of 100 mm/s, and the microscope was used. Check whether the corners of the upper surface of the glass substrate and the polished surface are notched. The face of the positioning block that collides with the laminate is perpendicular to the upper surface of the platform. A case where a notch having a length of 0.03 mm or more is not formed at a corner portion of the upper surface of the glass substrate and the polished surface is referred to as "○", and a length of the upper surface of the glass substrate and the polished surface is 0.03 mm or more and is not reached. The case of a notch of 0.05 mm is referred to as "△", and a case where a notch having a length of 0.05 mm or more is formed on the upper surface of the glass substrate and the corner of the polishing surface is referred to as "x".
繼而,於試驗例1~4中,將玻璃基板與補強板剝離,並於剝離過程中檢查玻璃基板是否開裂。於剝離試驗中,將薄刀***至利用磨石研磨而成之積層板之四角之中未與定位塊碰撞之部分之玻璃基板與補強板之間,從而形成成為剝離起點之間隙,並一面平坦地保持玻璃基板,一面使補強板自剝離起點側朝向相反側依序彎曲變形。於剝離 過程中,將基板未開裂之情形記為「○」,將基板開裂之情形記為「×」。 Then, in Test Examples 1 to 4, the glass substrate and the reinforcing plate were peeled off, and the glass substrate was inspected for cracking during the peeling process. In the peeling test, a thin blade is inserted between a glass substrate and a reinforcing plate which are not in contact with the positioning block among the four corners of the laminated plate which is ground by the grindstone, thereby forming a gap which is a starting point of peeling, and is flat on one side. While holding the glass substrate, the reinforcing plate is sequentially bent and deformed from the peeling start side toward the opposite side. Stripping In the process, the case where the substrate was not cracked was referred to as "○", and the case where the substrate was cracked was referred to as "x".
將試驗之結果顯示於表1中。於表1中,A表示玻璃基板之厚度,B表示補強板之厚度,C表示作為支持板之玻璃板之厚度,D表示作為剝離膜之聚矽氧膜之厚度,θ表示玻璃基板和補強板之界面與玻璃基板之研磨面所成之角。又,於表1中,R表示積層板之研磨面之曲面部之曲率半徑,E表示經加工之積層板之以板厚方向來看之補強板之自玻璃基板突出之尺寸,F表示積層板之研磨面之垂直部之於積層板之板厚方向之尺寸。 The results of the test are shown in Table 1. In Table 1, A indicates the thickness of the glass substrate, B indicates the thickness of the reinforcing plate, C indicates the thickness of the glass plate as the support plate, D indicates the thickness of the polyfluorene oxide film as the release film, and θ indicates the glass substrate and the reinforcing plate. The interface is at an angle to the polished surface of the glass substrate. Further, in Table 1, R represents the radius of curvature of the curved surface portion of the polished surface of the laminated board, E represents the size of the reinforcing plate from the glass substrate in the thickness direction of the processed laminated plate, and F represents the laminated plate. The vertical portion of the polished surface is dimensioned in the thickness direction of the laminate.
如表1所示,只要玻璃基板和補強板之界面與玻璃基板之研磨面所成之角θ為30°以下,則幾乎不會產生研磨時之缺口。又,只要經加工之積層板之以板厚方向來看之補強板之自玻璃基板突出之尺寸E為0.05mm以上,則幾乎不會產生定位時之缺口。又,只要玻璃基板和補強板之界面與玻璃基板之研磨面所成之角θ大於26°,則幾乎不會產生剝離時之裂痕。 As shown in Table 1, as long as the angle θ between the interface between the glass substrate and the reinforcing plate and the polished surface of the glass substrate is 30 or less, the notch at the time of polishing hardly occurs. Further, as long as the dimension E of the reinforcing plate protruding from the glass substrate in the thickness direction of the processed laminated plate is 0.05 mm or more, the notch at the time of positioning is hardly generated. Further, as long as the angle θ between the interface between the glass substrate and the reinforcing plate and the polished surface of the glass substrate is larger than 26°, cracks at the time of peeling hardly occur.
於試驗例5~8中,除了使用旭硝子公司製造之無鹼玻璃板(920mm×730mm×厚度0.2mm)作為玻璃基板以外,進行與試驗例1~4同樣之試驗。將試驗之結果示於表2中。 In the test examples 5 to 8, the same test as in Test Examples 1 to 4 was carried out except that an alkali-free glass plate (920 mm × 730 mm × thickness: 0.2 mm) manufactured by Asahi Glass Co., Ltd. was used as the glass substrate. The results of the test are shown in Table 2.
如表2所示,只要玻璃基板和補強板之界面與玻璃基板之研磨面所成之角θ為30°以下,則幾乎不會產生研磨時之缺口。又,只要經加工之積層板之以板厚方向來看之補強板之自玻璃基板突出之尺寸E為0.05mm以上,則幾乎不會產生定位時之缺口。又,只要玻璃基板和補強板之界面與玻璃基板之研磨面所成之角θ大於26°,則幾乎不會產生剝離時之裂痕。 As shown in Table 2, as long as the angle θ between the interface between the glass substrate and the reinforcing plate and the polished surface of the glass substrate is 30 or less, the gap at the time of polishing hardly occurs. Further, as long as the dimension E of the reinforcing plate protruding from the glass substrate in the thickness direction of the processed laminated plate is 0.05 mm or more, the notch at the time of positioning is hardly generated. Further, as long as the angle θ between the interface between the glass substrate and the reinforcing plate and the polished surface of the glass substrate is larger than 26°, cracks at the time of peeling hardly occur.
以上對積層板之加工方法、經加工之積層板之實施例等進行了說明,但本發明並不限於上述實施例等,可於申請專利範圍所記載之本發明之主旨之範圍內進行各種變形及改良。 In the above, the method of processing the laminated board, the embodiment of the processed laminated board, and the like have been described. However, the present invention is not limited to the above-described embodiment and the like, and various modifications can be made within the scope of the gist of the invention described in the claims. And improvement.
例如,於上述實施例等中,雖然積層板10之研磨面包括積層板10之分別自其正面及背面傾斜地延伸之傾斜部、積層板10之相對於其正面及背面垂直之垂直部及形成於各傾斜部與垂直部之間的曲面部,但上述研磨面之構成亦可多種多樣。例如,積層板之研磨面亦可包括積層板10之分別自其正面及背面傾斜地延伸之傾斜部及形成於兩個傾 斜部之間的曲面部。曲面部例如為圓弧面狀,且以積層板10之板厚方向來看較傾斜部更向外突出。 For example, in the above-described embodiment and the like, the polishing surface of the laminated plate 10 includes inclined portions extending from the front surface and the back surface of the laminated plate 10, and vertical portions perpendicular to the front surface and the back surface of the laminated plate 10, and are formed on The curved surface portion between each inclined portion and the vertical portion may have various configurations of the polishing surface. For example, the polished surface of the laminated board may further include inclined portions extending from the front surface and the back surface of the laminated board 10 and formed on the two inclined sides. The curved surface between the slopes. The curved surface portion has, for example, a circular arc shape, and protrudes more outward than the inclined portion in the thickness direction of the laminated plate 10.
又,於上述實施例等中,雖然經加工之積層板10之自其正面傾斜地延伸之傾斜部與經加工之積層板10之自其背面傾斜地延伸之傾斜部相對於經加工之積層板10之正面與背面之間的中心面對稱,但亦可為不對稱。 Further, in the above-described embodiment and the like, the inclined portion extending from the front surface of the processed laminated plate 10 and the inclined portion extending obliquely from the back surface of the processed laminated plate 10 with respect to the processed laminated plate 10 The center plane between the front and back is symmetrical, but it can also be asymmetrical.
本申請案係基於2012年12月10日提出申請之日本專利申請案2012-269500者,其內容作為參照而併入本文中。 The present application is based on Japanese Patent Application No. 2012-269500, filed on Dec.
10‧‧‧積層板 10‧‧‧Laminated boards
12‧‧‧基板 12‧‧‧Substrate
14‧‧‧補強板 14‧‧‧ reinforcing plate
15‧‧‧剝離膜 15‧‧‧Release film
16‧‧‧支持板 16‧‧‧Support board
30‧‧‧磨石 30‧‧‧Martstone
32‧‧‧研磨槽 32‧‧‧ Grinding trough
A‧‧‧基板之厚度 A‧‧‧thickness of the substrate
B‧‧‧補強板之厚度 B‧‧‧ Thickness of reinforcing plate
C‧‧‧支持板之厚度 C‧‧‧ Thickness of support plate
D‧‧‧剝離膜之厚度 D‧‧‧ peel film thickness
E‧‧‧補強板之突出尺寸 Outstanding dimensions of E‧‧‧ reinforcing plates
F‧‧‧積層板之研磨面之垂直部之於積層板之板厚方向之尺寸 F‧‧‧ Dimensions of the vertical part of the polished surface of the laminated board to the thickness direction of the laminated board
R‧‧‧曲率半徑 R‧‧‧ radius of curvature
θ‧‧‧角 Θ‧‧‧ corner
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