TWI583767B - 黏著片及電子零件的製造方法 - Google Patents
黏著片及電子零件的製造方法 Download PDFInfo
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- TWI583767B TWI583767B TW102100833A TW102100833A TWI583767B TW I583767 B TWI583767 B TW I583767B TW 102100833 A TW102100833 A TW 102100833A TW 102100833 A TW102100833 A TW 102100833A TW I583767 B TWI583767 B TW I583767B
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- adhesive sheet
- meth
- acrylate
- mass
- adhesive
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/67—Unsaturated compounds having active hydrogen
- C08G18/671—Unsaturated compounds having only one group containing active hydrogen
- C08G18/672—Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen
- C08G18/673—Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen containing two or more acrylate or alkylacrylate ester groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/77—Polyisocyanates or polyisothiocyanates having heteroatoms in addition to the isocyanate or isothiocyanate nitrogen and oxygen or sulfur
- C08G18/78—Nitrogen
- C08G18/79—Nitrogen characterised by the polyisocyanates used, these having groups formed by oligomerisation of isocyanates or isothiocyanates
- C08G18/791—Nitrogen characterised by the polyisocyanates used, these having groups formed by oligomerisation of isocyanates or isothiocyanates containing isocyanurate groups
- C08G18/792—Nitrogen characterised by the polyisocyanates used, these having groups formed by oligomerisation of isocyanates or isothiocyanates containing isocyanurate groups formed by oligomerisation of aliphatic and/or cycloaliphatic isocyanates or isothiocyanates
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- C—CHEMISTRY; METALLURGY
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Description
本發明關於黏著片及使用該黏著片之電子零件的製造方法。
半導體晶圓或基板係在貼合黏著片後,搭配於切斷成元件小片(切割)、黏著片之延伸(擴展)、自黏著片剝離元件小片(拾取)等之各步驟。於此等步驟所使用之黏著片(切割膠帶)中,希望一邊對於在切割步驟所切斷的元件小片(晶片)具有充分的黏著力,一邊在拾取步驟時沒有殘糊之程度的黏著力。
作為黏著片,有在對於紫外線及/或電子線等的活性光線具有透過性的基材上,塗布經由紫外線等進行聚合硬化反應之黏著劑層者。於此黏著片,採用在切割步驟後,對黏著劑層照射紫外線等以使黏著劑層聚合硬化,而降低黏著力後,拾取經切斷的晶片之方法。
作為如此的黏著片,專利文獻1及專利文獻2中揭示藉由在基材面上,例如塗布有能經由活性光線而三次元網狀化且含有在分子內具有光聚合性不飽和雙鍵之化合物(多官能性寡聚物)所成之黏著劑的黏著片。
[專利文獻1]日本特開昭60-196956號公報
[專利文獻2]日本特開昭60-223139號公報
於半導體晶圓或基板的加工步驟之中,為了使切割步驟所切斷的元件小片(晶片)不飛散,有在黏著片的黏著劑中含有增黏樹脂之情況,於照射活性光線時,增黏樹脂係不良地影響,引起黏著劑的硬化障礙,有於拾取步驟時無法剝離或發生殘糊之情況。再者,增黏樹脂會經時地滲出至半導體晶圓或基板表面。
因此,本發明之主要目的在於提供切割時晶片不飛散,可容易拾取,不易發生殘糊之黏著片。
本發明者們提供一種黏著片,其係在基材上積層光硬化型黏著劑層而成之黏著片,其中光硬化型黏著劑含有(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑、光聚合引發劑及增黏樹脂,增黏樹脂係完全或部分氫化之萜烯酚樹脂。
於本發明之一態樣中,前述完全或部分氫化之萜烯酚樹脂係羥值50~250。又,前述完全或部分氫化之萜烯酚樹脂係氫化率30~100%。
又,於本發明之一態樣中,前述光硬化型黏
著劑含有100質量份的(甲基)丙烯酸酯共聚物、5~200質量份的光聚合性化合物、0.5~20質量份的多官能異氰酸酯硬化劑、0.1~20質量份的光聚合引發劑及0.5~100質量份的完全或部分氫化之萜烯酚樹脂。
另外,於本發明之一態樣中,前述光硬化型黏著劑係具有羥基的(甲基)丙烯酸酯共聚物、具有羥基的光聚合引發劑與完全或部分氫化之萜烯酚樹脂藉由異氰酸酯硬化劑而化學鍵結者。
再者,本發明亦提供電子零件的製造方法,其係使用如申請專利範圍第1~5項之前述黏著片之電子零件的製造方法,其包含:於已貼合在環框的前述黏著片上,貼附半導體晶圓或基板之貼附步驟;切割前述半導體晶圓或前述基板而形成半導體晶片或半導體零件之切割步驟;對前述黏著片照射活性光線之光照射步驟;為了擴大前述半導體晶片或前述半導體零件彼此之間隔而拉伸黏著片之擴展步驟;及自前述黏著片拾取前述半導體晶片或前述半導體零件之拾取步驟。
依照本發明,提供切割時晶片不飛散,可容易拾取,不易發生殘糊之黏著片。
以下,說明用於實施本發明之合適形態。再
者,以下說明的實施形態係顯示本發明的代表性實施形態之一例,本發明之範圍係不受此等所狹義解釋。
本發明的黏著片之特徵為:在基材上積層光硬化型黏著劑層(以下亦稱為「黏著劑層」)所成,光硬化型黏著劑含有(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑、光聚合引發劑及增黏樹脂,增黏樹脂係完全或部分氫化之萜烯酚樹脂。
(甲基)丙烯酸酯共聚物係僅(甲基)丙烯酸酯單體之聚合物,或(甲基)丙烯酸酯單體與乙烯基化合物單體之共聚物。再者,所謂的(甲基)丙烯酸酯,就是丙烯酸酯及甲基丙烯酸酯之總稱。(甲基)丙烯酸等之含有(甲基)的化合物等亦同樣地,為在名稱中具有「甲基」的化合物與不具有「甲基」的化合物之總稱。
作為(甲基)丙烯酸酯之單體,可舉出例如:(甲基)丙烯酸丁酯、(甲基)丙烯酸-2-丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸十三酯、(甲基)丙烯酸肉豆蔻酯、(甲基)丙烯酸鯨蠟酯、(甲基)丙烯酸十八酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊烯酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯
、(甲基)丙烯酸丁氧基甲酯及(甲基)丙烯酸乙氧基正丙酯。
作為與(甲基)丙烯酸酯單體可共聚合之乙烯基化合物單體,可舉出具有羥基、羧基、環氧基、醯胺基、胺基、羥甲基、磺酸基、胺磺酸基或(亞)磷酸酯基等官能基群的1種以上之含官能基的單體。
作為具有羥基的單體,有例如:(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯。
作為具有羧基的單體,有例如:(甲基)丙烯酸、巴豆酸、馬來酸、馬來酸酐、伊康酸、富馬酸、丙烯醯胺-N-甘醇酸及桂皮酸。
作為具有環氧基的單體,有例如:烯丙基環氧丙基醚及(甲基)丙烯酸環氧丙基醚。
作為具有醯胺基的單體,有例如:(甲基)丙烯醯胺。
作為具有胺基的單體,有例如:N,N-二甲基胺基乙基(甲基)丙烯酸酯。
作為具有羥甲基的單體,有例如:N-羥甲基丙烯醯胺。
其中,為了防止對被附體的污染,較佳為含有具有能與異氰酸酯硬化劑反應的羥基之單體。
作為光聚合性化合物,可使用例如:三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇三丙
烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、三聚氰酸三乙基丙烯酸酯、市售之寡酯丙烯酸酯等。
作為光聚合性化合物,除了上述丙烯酸酯系化合物,還可使用胺基甲酸酯丙烯酸酯寡聚物。胺基甲酸酯丙烯酸酯寡聚物,係由對於使聚酯型或聚醚型等的多元醇化合物與多價異氰酸酯化合物反應而得之末端異氰酸酯胺基甲酸酯預聚物,使具有羥基的(甲基)丙烯酸酯反應而得。
於多價異氰酸酯化合物中,可使用例如:2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4-二異氰酸酯、三甲基六亞甲基二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯等。又,於具有羥基的(甲基)丙烯酸酯中,可使用例如:(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、聚乙二醇(甲基)丙烯酸酯、季戊四醇三丙烯酸酯、縮水甘油二(甲基)丙烯酸酯、二季戊四醇單羥基五丙烯酸酯等。
作為光聚合性化合物,於紫外線等之照射後的黏著劑硬化良好之點,較佳為具有4個以上的乙烯基之胺基甲酸酯丙烯酸酯寡聚物。
光聚合性化合物之摻合量,相對於100質量份的(甲基)丙烯酸酯共聚物,較佳為5質量份以上200質量份以下,更佳為20質量份以上120質量份以下。若減少光
聚合性化合物之摻合量,則放射線照射後的黏著片之剝離性降低,容易發生半導體晶片之拾取不良。另一方面,若增多光聚合性化合物之摻合量,則由於切割時的糊之撥起而容易發生拾取不良,同時因反應殘渣而產生微小的殘糊,成為污染之原因。
於多官能異氰酸酯硬化劑中,使用具有2個以上的異氰酸酯基者,例如芳香族聚異氰酸酯、脂肪族聚異氰酸酯、脂環族聚異氰酸酯、此等之二聚物或三聚物、加成物等。
作為芳香族聚異氰酸酯,有例如:1,3-伸苯基二異氰酸酯、4,4’-二苯基二異氰酸酯、1,4-伸苯基二異氰酸酯、4,4’-二苯基甲烷二異氰酸酯、2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4’-甲苯胺二異氰酸酯、2,4,6-三異氰酸酯甲苯、1,3,5-三異氰酸酯苯、聯茴香胺二異氰酸酯、4,4’-二苯基醚二異氰酸酯、4,4’,4”-三苯基甲烷三異氰酸酯、ω,ω’-二異氰酸酯-1,3-二甲基苯、ω,ω’-二異氰酸酯-1,4-二甲基苯、ω,ω’-二異氰酸酯-1,4-二乙基苯、1,4-四甲基苯二甲基二異氰酸酯及1,3-四甲基苯二甲基二異氰酸酯。
作為脂肪族聚異氰酸酯,有例如:三亞甲基二異氰酸酯、四亞甲基二異氰酸酯、六亞甲基二異氰酸酯、五亞甲基二異氰酸酯、1,2-伸丙基二異氰酸酯、2,3-伸丁基二異氰酸酯、1,3-伸丁基二異氰酸酯、十亞甲基二異氰酸酯及2,4,4-三甲基六亞甲基二異氰酸酯。
作為脂環族聚異氰酸酯,有例如:3-異氰酸甲酯-3,5,5-三甲基環己基異氰酸酯、1,3-環戊烷二異氰酸酯、1,3-環己烷二異氰酸酯、1,4-環己烷二異氰酸酯、甲基-2,4-環己烷二異氰酸酯、甲基-2,6-環己烷二異氰酸酯、4,4’-亞甲基雙(環己基異氰酸酯)、1,4-雙(異氰酸甲酯)環己烷及1,4-雙(異氰酸甲酯)環己烷。
作為二聚物或三聚物、加成物,有例如:二苯基甲烷二異氰酸酯之二聚物、六亞甲基二異氰酸酯之三聚物、三羥甲基丙烷與甲苯二異氰酸酯之加成物、三羥甲基丙烷與六亞甲基二異氰酸酯之加成物。
於上述聚異氰酸酯之中,較佳為具有3個以上的異氰酸酯基者,特佳為六亞甲基二異氰酸酯之三聚物、三羥甲基丙烷與甲苯二異氰酸酯之加成物、三羥甲基丙烷與六亞甲基二異氰酸酯之加成物。
多官能異氰酸酯硬化劑之摻合比,相對於100質量份的(甲基)丙烯酸酯共聚物,較佳為0.5質量份以上20質量份以下,更佳為1.0質量份以上10質量份以下。多官能異氰酸酯硬化劑若為0.5質量份以上,則由黏著力不太強,而可抑制拾取不良之產生,更且藉由具有羥基的光聚合引發劑與完全或部分氫化之萜烯酚樹脂之化學鍵結,而可抑制光聚合引發劑與完全或部分氫化之萜烯酚樹脂對黏著劑表面之滲出所造成的污染,多官能異氰酸酯硬化劑若為20質量份以下,則黏著力不降低,在切割時維持半導體晶片之保持性。
於光聚合引發劑中,使用苯偶姻、苯偶姻烷基醚類、苯乙酮類、蒽醌類、噻噸酮類、縮酮類、二苯基酮類或呫噸酮類等。
作為苯偶姻,有例如:苯偶姻、苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻丙基醚等。
作為苯乙酮類,有例如:苯偶姻烷基醚類、苯乙酮、2,2-二甲氧基-2-苯乙酮、2,2-二乙氧基-2-苯乙酮、1,1-二氯苯乙酮等。
作為蒽醌類,有2-甲基蒽醌、2-乙基蒽醌、2-第三丁基蒽醌、1-氯蒽醌等。
作為噻噸酮類,有例如:2,4-二甲基噻噸酮、2,4-二異丙基噻噸酮、2-氯噻噸酮、2,4-二異丙基噻噸酮等。
作為縮酮類,有例如:苯乙酮二甲基縮酮、苄基二甲基甲醇、苄基二苯基硫化物、四甲基秋蘭姆單硫化物、偶氮雙異丁腈、聯苄、聯乙醯、β-氯蒽醌等。
其中,為了防止對被附體之污染,較佳為含有具有能與異氰酸酯硬化劑反應的羥基之2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]-苯基}-2-甲基-丙-1-酮(BASF Japan公司製,製品名IRGACURE 127)等。
光聚合引發劑之摻合量,相對於100質量份的(甲基)丙烯酸酯聚合物,較佳為0.1質量份以上20質量份以下。摻合量若過少,則放射線照射後的黏著片之剝離性降低,容易發生半導體晶片之拾取不良。另一方面,摻合量若過多,則光聚合引發劑滲出至黏著劑表面,成為污染之原因。
於光聚合引發劑中,視需要亦可組合1種或2種以上的習知之光聚合促進劑而併用。於光聚合促進劑中,可使用苯甲酸系或三級胺等。作為三級胺,可舉出三乙胺、四乙基五胺、二甲基胺基醚等。
作為增黏樹脂,較佳為將萜烯酚樹脂完全或部分氫化之萜烯酚樹脂。
萜烯酚樹脂例如可藉由使1莫耳的萜烯化合物與0.1~50莫耳的酚類反應而製造。
作為萜烯化合物,可舉出香茅烯、別蘿勒萜、蘿勒萜、α-蒎烯、β-蒎烯、雙戊烯、檸檬烯、α-茴香萜、α-萜品烯、γ-萜品烯、萜品油烯、1,8-桉樹腦、1,4-桉樹腦、α-萜品醇、β-萜品醇、γ-萜品醇、莰烯、三環萜、檜烯、對二烯類、蒈烯類等。於此等的化合物之中,本發明特佳為使用α-蒎烯、β-蒎烯、檸檬烯、香茅烯、別羅勒烯、α-萜品烯。
作為酚類,可舉出苯酚、甲酚、二甲酚、兒茶酚、間苯二酚、氫酚、雙酚A等,惟不受此等所限定。
萜烯酚樹脂的酚類之比率係25~50莫耳%左右,惟不受此等所限定。
完全或部分氫化之萜烯酚樹脂的羥值較佳為50~250。此係因為羥值低於50時,與異氰酸酯系硬化劑之反應不充分,滲出至黏著劑表面,成為污染之原因,若比250多則黏度上升,發生與(甲基)丙烯酸酯共聚物等之混合不均,拾取特性係不安定。
氫化之方法係沒有特別的限定,可舉出例如:使用鈀、釕、銠等之貴金屬或在活性碳、活性氧化鋁、矽藻土等之載體上擔持有彼等者作為觸媒而進行之方法。又,氫化率係可藉由溴值測定、碘值測定等來測定。
完全或部分氫化之萜烯酚樹脂的氫化率較佳為30%以上,更佳為70%以上。此係因為低於30%時,由於活性光線之照射的光聚合性化合物之反應障礙,而黏著力不充分降低,拾取性降低。
完全或部分氫化之萜烯酚樹脂的摻合比,相對於100質量份的(甲基)丙烯酸酯共聚物,較佳為0.5質量份以上100質量份以下,更佳為1.0質量份以上50質量份以下。完全或部分氫化之萜烯酚樹脂若為0.5質量份以上,則由於黏著力不太低,而在切割時維持半導體晶片之保持性,若為100質量份以下,則可抑制拾取不良之發生。
黏著劑層之厚度較佳為3μm以上100μm以下,特佳為5μm以上20μm以下。黏著劑層若過厚,則黏著力變過高,拾取性降低。又,黏著劑層若過薄,則黏著力變過低,切割時的晶片保持性降低,在環框與片之間有發生剝離之情況。
於黏著劑中,亦可添加防老化劑、填充劑、紫外線吸收劑及光穩定劑等之各種添加劑。
作為基材之材料,可舉出例如:聚氯乙烯、聚對苯二甲酸乙二酯、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸-丙烯酸酯薄膜、乙烯-丙烯酸乙酯共聚物、聚乙烯、聚丙
烯、丙烯系共聚物、乙烯-丙烯酸共聚物,及乙烯-(甲基)丙烯酸共聚物或乙烯-(甲基)丙烯酸-(甲基)丙烯酸酯共聚物等經金屬離子所交聯之多離子聚合物樹脂等。基材係可為此等樹脂之混合物或共聚物,也可為由此等樹脂所成之薄膜或片之積層體。
基材薄膜之素材較佳為使用多離子聚合物樹脂。於多離子聚合物樹脂之中,若使用將具有乙烯單位、甲基丙烯酸單位及(甲基)丙烯酸烷基酯單位之共聚物經Na+、K+、Zn2+等之金屬離子所交聯之多離子聚合物樹脂,則切削屑抑制效果係顯著而適用。
基材係可為由上述材料所成之單層或多層的薄膜或片,也可為積層有由不同材料所成之薄膜等者。基材之厚度為50~200μm,較佳為70~150μm。
對基材,較佳為施予抗靜電處理。作為抗靜電處理,有在基材中摻合抗靜電劑之處理、在基材表面上塗布抗靜電劑之處理、電暈放電之處理。
作為抗靜電劑,可使用例如:四級胺鹽單體等。作為四級胺鹽單體,可舉出例如:二甲基胺基乙基(甲基)丙烯酸酯四級鹽化物、二乙基胺基乙基(甲基)丙烯酸酯四級鹽化物、甲基乙基胺基乙基(甲基)丙烯酸酯四級鹽化物、對二甲基胺基苯乙烯四級鹽化物及對二乙基胺基苯乙烯四級鹽化物。其中,較佳為二甲基胺基乙基甲基丙烯酸酯四級鹽化物。
依順序說明本發明之電子零件的製造方法的具體步
驟。
首先,於貼附步驟中,將黏著片貼附於半導體晶圓(或基板)與環框。晶圓係可為矽晶圓及氮化鎵晶圓、碳化矽晶圓、藍寶石晶圓等之以往泛用的晶圓。基板係可為以樹脂密封晶片之封裝基板、LED封裝基板等之泛用的基板。
於切割步驟中,將矽晶圓等切割而形成半導體晶片或半導體零件。
於光照射步驟中,自基材側,對光硬化型黏著劑層照射紫外線等之活性光線。作為紫外線之光源,可使用低壓水銀燈、高壓水銀燈、超高壓水銀燈、金屬鹵化物燈。又,亦可使用電子線代替紫外線,電子線之光源係可使用α線、β線、γ線。
藉由光照射而黏著劑層係三次元網狀化而硬化,黏著劑層之黏著力降低。此時如上述,由於即使將本發明的黏著片加溫,晶圓等也不過度地密接,故藉由紫外線等之照射而得到黏著力的充分降低。
於擴展步驟/拾取步驟中,為了擴大半導體晶片或半導體零件彼此之間隔而將黏著片拉伸,以針銷等頂起晶片或零件。然後,以真空筒夾或空氣鑷子等吸附晶片或零件,自黏著片的黏著劑層來剝離而拾取。此時,於本
發明的黏著片中,由於藉由紫外線等之照射而得到黏著力的充分降低,故晶片或零件與黏著劑層之間的剝離變容易,得到良好的拾取性,亦不發生殘糊等之不良。
依照「表1」中所示之摻合來調製光硬化型黏著劑。將此光硬化型黏著劑塗布於聚對苯二甲酸乙二酯製之分隔薄膜上,以使乾燥後的黏著層之厚度成為20μm。將此黏著層積層在基材薄膜上,於40℃下熟成7日,而得到黏著片。
於基材薄膜中,使用以乙烯-甲基丙烯酸-甲基丙烯酸烷酯共聚物之Zn鹽作為主體之多離子聚合物樹脂,使用經由T模頭擠出MFR值1.0g/10分鐘(JIS K7210,210℃)、熔點86℃、含有Zn2+離子者(DU PONT-MITSUI POLYCHEMICALS公司製,品號:HM1855)而成膜為100μm者。
A-1:綜研化學公司製SK-Dyne 1496;96%的丙烯酸-2-乙基己酯、4%的丙烯酸-2-羥基乙酯之共聚物,藉由溶液聚合而得。
A-2:日本ZEON公司製丙烯酸橡膠AR53L;42%的丙烯酸乙酯、22%的丙烯酸丁酯、36%的丙烯酸甲氧基乙酯之共聚物,藉由乳化聚合而得。
B-1:根上工業公司製UN-905;使異佛爾酮二異氰酸酯的三聚物與以二季戊四醇五丙烯酸酯作為主成分的丙烯酸酯反應者,乙烯基之數為15個。
B-2:新中村化學公司製A-TMPT;三羥甲基丙烷三丙烯酸酯,乙烯基之數為3個。
C-1:日本聚氨酯公司製Coronate L-45E;2,4-甲苯二異氰酸酯的三羥甲基丙烷之加成物。
D-1:BASF Japan公司製IRGACURE127;2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]-苯基}-2-甲基-丙烷-1-酮。
D-2:BASF Japan公司製IRGACURE651;苄基二甲基縮酮。
使1莫耳的α-蒎烯(Yasuhara Chemical(股)製α-蒎烯,純度95%)與0.5莫耳的苯酚(關東化學(股)製苯酚,純度99%)反應,使用GPC測定的數量平均分子量600、重量平均分子量800之萜烯酚樹脂,得到E-1之部分氫化之萜烯酚樹脂。
E-1:羥值120、氫化率75%之本公司合成品
以下,使用變更α-蒎烯與酚之莫耳比率並使其反應之萜烯酚樹脂,得到完全或部分氫化之萜烯酚樹脂。
E-2:羥值5、氫化率75%的本公司合成品
E-3:羥值250、氫化率75%的本公司合成品
E-4:羥值3、氫化率75%的本公司合成品
E-5:羥值300、氫化率75%的本公司合成品
E-6:羥值120、氫化率30%的本公司合成品
E-7:羥值120、氫化率20%的本公司合成品
E-8:羥值120、氫化率0%的本公司合成品
E-9:羥值120、氫化率100%的本公司合成品
將所得之黏著片貼合於形成虛擬(dummy)的電路圖案之直徑8吋、厚度0.1mm的矽晶圓與環框上,進行切割。然後,進行光照射、擴展、拾取之各步驟。
切割步驟之條件係如以下。
切割裝置:DISCO公司製DAD341
切割板:DISCO公司製NBC-ZH205O-27HEEE
切割板形狀:外徑55.56mm,刀寬35μm,內徑19.05mm
切割板旋轉數:40,000rpm
切割板輸送速度:50mm/秒
切割尺寸:10mm見方
對黏著片的切入量:40μm
切削水溫度:25℃
切削水量:1.0公升/分鐘
光照射步驟之條件係如以下。
紫外線照射:高壓水銀燈,照射量150mJ/cm2
擴展與拾取步驟之條件係如以下。
拾取裝置:Canon Machinery公司製CAP-300II
擴展量:8mm
針銷形狀:250μmR
針銷數:5支
針銷頂起高度:0.3mm
於切割步驟及擴展與拾取步驟中,進行以下之評價。
晶片保持性係以切割步驟後,半導體晶片保持在黏著片上的半導體晶片之殘存率為基礎,藉由以下之基準來評價。
優(◎):晶片飛散為低於5%
良(○):晶片飛散為5%以上且低於10%
不好(×):晶片飛散為10%以上
拾取性係以拾取步驟中,可拾取半導體晶片之率為基礎,藉由以下之基準來評價。
優(◎):晶片的拾取成功率為95%以上
良(○):晶片的拾取成功率為80%以上且低於95%
不好(×):晶片的拾取成功率為低於80%
將黏著片貼附於矽製鏡面晶圓,於20分鐘後用高壓水銀燈照射150mJ/cm2的紫外線後,剝離黏著片。用顆粒計數器來測定在矽製鏡面晶圓的貼附面上所殘留之0.28μm以上的粒子數。
優(◎):顆粒少於500個
良(○):顆粒少於2000個
不好(×):顆粒為2000個以上
Claims (6)
- 一種黏著片,其係在基材上積層光硬化型黏著劑層而成之黏著片,其中該光硬化型黏著劑含有(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑、具有羥基之光聚合引發劑及增黏樹脂,該增黏樹脂係完全或部分氫化之萜烯酚樹脂。
- 如申請專利範圍第1項之黏著片,其中完全或部分氫化之萜烯酚樹脂係羥值50~250。
- 如申請專利範圍第1或2項之黏著片,其中完全或部分氫化之萜烯酚樹脂係氫化率30~100%。
- 如申請專利範圍第1或2項之黏著片,其中光硬化型黏著劑含有100質量份的(甲基)丙烯酸酯共聚物、5~200質量份的光聚合性化合物、0.5~20質量份的多官能異氰酸酯硬化劑、0.1~20質量份的光聚合引發劑及0.5~100質量份的完全或部分氫化之萜烯酚樹脂。
- 如申請專利範圍第1或2項之黏著片,其中光硬化型黏著劑係具有羥基的(甲基)丙烯酸酯共聚物、具有羥基的光聚合引發劑與完全或部分氫化之萜烯酚樹脂藉由異氰酸酯硬化劑而化學鍵結者。
- 一種電子零件的製造方法,其係使用如申請專利範圍第1至5項中任一項之黏著片之電子零件的製造方法,其包含:於已貼合在環框的該黏著片上,貼附半導體晶圓或基板之貼附步驟,切割該半導體晶圓或該基板而形成半導體晶片或 半導體零件之切割步驟,對該黏著片照射活性光線之光照射步驟,為了擴大該半導體晶片或該半導體零件彼此之間隔而拉伸黏著片之擴展步驟,及自該黏著片拾取該半導體晶片或該半導體零件之拾取步驟。
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