TWI578334B - Paste composition - Google Patents
Paste composition Download PDFInfo
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- TWI578334B TWI578334B TW102104040A TW102104040A TWI578334B TW I578334 B TWI578334 B TW I578334B TW 102104040 A TW102104040 A TW 102104040A TW 102104040 A TW102104040 A TW 102104040A TW I578334 B TWI578334 B TW I578334B
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- aluminum
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- paste
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- 239000000203 mixture Substances 0.000 title claims description 45
- 239000000843 powder Substances 0.000 claims description 56
- 238000009792 diffusion process Methods 0.000 claims description 38
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 31
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 15
- 229910001257 Nb alloy Inorganic materials 0.000 claims description 10
- QNTVPKHKFIYODU-UHFFFAOYSA-N aluminum niobium Chemical compound [Al].[Nb] QNTVPKHKFIYODU-UHFFFAOYSA-N 0.000 claims description 6
- 229910000691 Re alloy Inorganic materials 0.000 claims description 2
- BAFKVXDNLXTDDD-UHFFFAOYSA-N aluminum rhenium Chemical compound [Al].[Re] BAFKVXDNLXTDDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 36
- 229910052732 germanium Inorganic materials 0.000 description 28
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- -1 ester compound Chemical class 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 238000002161 passivation Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 230000007613 environmental effect Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Chemical compound O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- LNOLJFCCYQZFBQ-BUHFOSPRSA-N (ne)-n-[(4-nitrophenyl)-phenylmethylidene]hydroxylamine Chemical compound C=1C=C([N+]([O-])=O)C=CC=1C(=N/O)/C1=CC=CC=C1 LNOLJFCCYQZFBQ-BUHFOSPRSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- BSPSZRDIBCCYNN-UHFFFAOYSA-N phosphanylidynetin Chemical compound [Sn]#P BSPSZRDIBCCYNN-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000962 poly(amidoamine) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Wood Science & Technology (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Description
本發明廣泛而言係關於一種糊膏狀組成物，特定而言，係關於一種用以形成與太陽電池單元中之p型擴散區域及n型擴散區域電性接觸之電極的糊膏狀組成物。 The present invention relates generally to a paste-like composition, and more particularly to a paste-like composition for forming an electrode in electrical contact with a p-type diffusion region and an n-type diffusion region in a solar cell. .
先前，結晶系太陽電池中，p型矽基板之受光面上介隔n型雜質層形成抗反射膜及柵電極，並且於與受光面相反側之背面形成有p型擴散區域及電極。業界對為形成此種電極而含有鋁作為導電成分之鋁糊膏之組成進行各種研究，例如，日本專利特開2011-66353號公報(專利文獻1)中揭示有太陽電池用鋁糊膏。 In the crystal-based solar cell, the n-type impurity layer is formed on the light-receiving surface of the p-type germanium substrate to form an anti-reflection film and a gate electrode, and a p-type diffusion region and an electrode are formed on the back surface opposite to the light-receiving surface. Various studies have been made on the composition of an aluminum paste containing aluminum as a conductive component for forming such an electrode. For example, an aluminum paste for a solar cell is disclosed in Japanese Laid-Open Patent Publication No. 2011-66353 (Patent Document 1).
又，作為轉換效率較高之結晶系太陽電池，例如，如日本專利特開2011-233657號公報(專利文獻2)中所揭示般，開發有僅於與n型矽基板之受光面相反側之背面上形成有n型擴散區域及與其接觸之n型用電極、及p型擴散區域及與其接觸之p型用電極的太陽電池。 In addition, as disclosed in Japanese Laid-Open Patent Publication No. 2011-233657 (Patent Document 2), as disclosed in Japanese Laid-Open Patent Publication No. 2011-233657 (Patent Document 2), it is developed on the opposite side to the light receiving surface of the n-type germanium substrate. A solar cell having an n-type diffusion region and an n-type electrode in contact therewith, a p-type diffusion region, and a p-type electrode in contact therewith is formed on the back surface.
具有此種構造之太陽電池單元例如如日本專利特表2007-525008號公報(專利文獻3)中所揭示般，通常為充分地減小與矽基板之接觸電阻，而使用含有比鋁導電性優異之銀之銀糊膏作為電極之導電成分。 The solar cell unit having such a structure is generally such that, as disclosed in Japanese Patent Laid-Open Publication No. 2007-525008 (Patent Document 3), the contact resistance with the tantalum substrate is generally sufficiently reduced, and the use ratio is superior to that of aluminum. The silver paste of silver acts as a conductive component of the electrode.
太陽電池設置於室外，故而於其使用環境下大多暴露於濕度較高之環境中。因此，於在具有如專利文獻2所揭示之構造之太陽電池中為形成p型用電極及n型用電極而使用銀糊膏之情形時，藉由p型用電極與n型用電極之間之微弱之電位差而產生銀之遷移。其結果為，經由p型擴散區域及n型擴散區域而於p型用電極與n型用電極之間產生短路，容易引起自太陽電池之電能之擷取不良。又，就製造成本及資源風險之觀點而言，使用銀亦欠佳。 Since the solar cells are installed outdoors, they are mostly exposed to a high humidity environment in their use environment. Therefore, in the case of using a silver paste for forming a p-type electrode and an n-type electrode in a solar cell having the structure disclosed in Patent Document 2, by using a p-type electrode and an n-type electrode The weak potential difference produces silver migration. As a result, a short circuit occurs between the p-type electrode and the n-type electrode via the p-type diffusion region and the n-type diffusion region, and the power consumption from the solar cell is likely to be poor. Also, the use of silver is also poor in terms of manufacturing costs and resource risks.
因此，本發明之目的在於提供一種糊膏狀組成物，其可不使用銀作為用以形成與太陽電池中之p型擴散區域及n型擴散區域電性接觸之電極的導電成分，而耐環境性優異，並且防止導電成分向矽基板之擴散，且降低與矽基板之接觸電阻。 Accordingly, it is an object of the present invention to provide a paste-like composition which can be used as a conductive component for forming an electrode which is in electrical contact with a p-type diffusion region and an n-type diffusion region in a solar cell without using silver. It is excellent and prevents the diffusion of the conductive component to the germanium substrate and reduces the contact resistance with the germanium substrate.
本發明者等人針對用以形成與太陽電池中之p型擴散區域及n型擴散區域電性接觸之電極的導電性糊膏之組成進行各種研究。其結果為，發現可藉由使用鋁-矽合金粉末作為導電成分，而使耐環境性優異，並且防止導電成分向矽基板之擴散，降低與矽基板之接觸電阻。基於該見解，依據本發明之糊膏狀組成物具備下述特徵。 The inventors of the present invention conducted various studies on the composition of a conductive paste for forming an electrode that is in electrical contact with a p-type diffusion region and an n-type diffusion region in a solar cell. As a result, it was found that the use of the aluminum-niobium alloy powder as a conductive component makes it excellent in environmental resistance, prevents diffusion of the conductive component to the tantalum substrate, and lowers the contact resistance with the tantalum substrate. Based on this finding, the paste-like composition according to the present invention has the following features.
依據本發明之糊膏狀組成物係用以形成與太陽電池中之p型擴散區域及n型擴散區域電性接觸之電極者，且其含有鋁-矽合金粉末、玻璃粉末及有機媒劑，鋁-矽合金粉末含有矽12質量%以上且30質量%以下。 The paste-like composition according to the present invention is used for forming an electrode that is in electrical contact with a p-type diffusion region and an n-type diffusion region in a solar cell, and contains an aluminum-niobium alloy powder, a glass powder, and an organic vehicle. The aluminum-bismuth alloy powder contains 矽12% by mass or more and 30% by mass or less.
於本發明之糊膏狀組成物中，較佳為構成鋁-矽合金粉末之粒子具有鱗片狀之形狀。 In the paste composition of the present invention, it is preferred that the particles constituting the aluminum-bismuth alloy powder have a scaly shape.
又，於本發明之糊膏狀組成物中，較佳為構成鋁-矽合金粉末之粒子具有短徑與長徑，且長徑相對於短徑之比率為1以上且100以下。 Further, in the paste composition of the present invention, it is preferred that the particles constituting the aluminum-bismuth alloy powder have a short diameter and a long diameter, and the ratio of the long diameter to the short diameter is 1 or more and 100 or less.
進而，於本發明之糊膏狀組成物中，較佳為相對於鋁-矽合金粉末100質量份，含有玻璃粉末0.5質量份以上且40質量份以下、及有機媒劑30質量份以上且100質量份以下。 Furthermore, it is preferable that the paste-like composition of the present invention contains 0.5 parts by mass or more and 40 parts by mass or less, and 30 parts by mass or more of the organic vehicle with respect to 100 parts by mass of the aluminum-bismuth alloy powder. Below the mass.
如上所述，藉由使用本發明之糊膏狀組成物，可不使用銀作為用以形成與太陽電池中之p型擴散區域及n型擴散區域電性接觸之電極的導電成分，而使電極之耐環境性優異，並且防止導電成分向矽基板之擴散，且降低與矽基板之接觸電阻。 As described above, by using the paste-like composition of the present invention, it is possible to use no silver as a conductive component for forming an electrode in electrical contact with the p-type diffusion region and the n-type diffusion region in the solar cell, thereby making the electrode It is excellent in environmental resistance and prevents diffusion of conductive components to the ruthenium substrate and reduces contact resistance with the ruthenium substrate.
1‧‧‧n型矽半導體基板 1‧‧‧n type germanium semiconductor substrate
2‧‧‧受光面鈍化膜 2‧‧‧Lighted passivation film
3‧‧‧背面鈍化膜 3‧‧‧Back passivation film
4‧‧‧n+擴散區域 4‧‧‧n + diffusion area
5‧‧‧p+擴散區域 5‧‧‧p + diffusion zone
6‧‧‧n型用電極 6‧‧‧n type electrode
7‧‧‧p型用電極 7‧‧‧p type electrode
8‧‧‧線狀圖案 8‧‧‧Line pattern
圖1係示意性地表示作為一實施形態之本發明所應用之太陽電池元件之通常之剖面構造的剖面圖。 Fig. 1 is a cross-sectional view schematically showing a general cross-sectional structure of a solar cell element to which the present invention is applied as an embodiment.
圖2係表示本發明之實施例與比較例中所製作之電極圖案的平面圖。 Fig. 2 is a plan view showing an electrode pattern produced in Examples and Comparative Examples of the present invention.
圖3係示意性地表示本發明之實施例與比較例中所製作之電極構造之剖面的剖面圖。 Fig. 3 is a cross-sectional view schematically showing a cross section of an electrode structure produced in Examples and Comparative Examples of the present invention.
如圖1所示，太陽電池元件係例如使用厚度為180~250 μm之n型矽半導體基板1而構成。於n型矽半導體基板1之受光面側例如形 成有包含氮化矽膜之受光面鈍化膜2。 As shown in FIG. 1, the solar cell element is configured using, for example, an n-type germanium semiconductor substrate 1 having a thickness of 180 to 250 μm. For example, the light receiving surface side of the n-type germanium semiconductor substrate 1 is shaped A light-receiving surface passivation film 2 including a tantalum nitride film is formed.
於與n型矽半導體基板1之受光面相反側之背面，例如形成有包含氮化矽膜之背面鈍化膜3。又，n型矽半導體基板1之背面側交替鄰接形成有n+擴散區域4與p+擴散區域5。貫通背面鈍化膜3形成有到達n型矽半導體基板1之表面之數個接觸孔，經由各接觸孔以與n+擴散區域4與p+擴散區域5各者之表面接觸之方式，形成有依據既定之圖案形狀的n型用電極6與p型用電極7。n型用電極6與p型用電極7分別藉由如下方式而形成：藉由網版印刷等塗佈糊膏狀組成物並使其乾燥後，以577℃以下(鋁與矽之固相線溫度以下)之溫度進行焙燒，該糊膏狀組成物含有：過共晶組成之鋁-矽(Al-Si)合金粉末、具體而言為含有矽12質量%以上且30質量%以下之鋁-矽(Al-Si)合金粉末、玻璃粉末及有機媒劑。藉由將具有上述組成之糊膏狀組成物用於以與交替形成於太陽電池單元之一面之n+擴散區域4及p+擴散區域5電性接觸之方式形成n型用電極6與p型用電極7，可使n型用電極6與p型用電極7耐環境性優異，並且防止導電成分向n型矽半導體基板1之擴散，且降低與n型矽半導體基板1之接觸電阻。 On the back surface opposite to the light-receiving surface of the n-type germanium semiconductor substrate 1, for example, a back surface passivation film 3 including a tantalum nitride film is formed. Further, the n + diffusion region 4 and the p + diffusion region 5 are alternately formed adjacent to the back side of the n-type germanium semiconductor substrate 1. A plurality of contact holes reaching the surface of the n-type germanium semiconductor substrate 1 are formed through the back surface passivation film 3, and are formed in contact with the surfaces of each of the n + diffusion region 4 and the p + diffusion region 5 via the contact holes. The n-type electrode 6 and the p-type electrode 7 have a predetermined pattern shape. The n-type electrode 6 and the p-type electrode 7 are each formed by applying a paste-like composition by screen printing or the like and drying it, and then 577 ° C or less (solid phase line of aluminum and bismuth) The paste-like composition contains a hypereutectic Al-Si alloy powder, specifically containing 12% by mass or more and 30% by mass or less of aluminum. Al (Si) alloy powder, glass powder and organic vehicle. The paste-like composition having the above composition is used to form the n-type electrode 6 and the p-type in such a manner as to be in electrical contact with the n + diffusion region 4 and the p + diffusion region 5 which are alternately formed on one surface of the solar cell. With the electrode 7, the n-type electrode 6 and the p-type electrode 7 can be excellent in environmental resistance, and the conductive component can be prevented from diffusing into the n-type germanium semiconductor substrate 1 and the contact resistance with the n-type germanium semiconductor substrate 1 can be lowered.
糊膏狀組成物為導電性之糊膏狀組成物，該導電性之糊膏狀組成物為形成上述n型用電極6與p型用電極7而塗敷於背面鈍化膜3上，且以經由形成於背面鈍化膜3上之接觸孔與n型矽半導體基板1之表面、即n+擴散區域4與p+擴散區域5之各表面電性接觸(歐姆接觸)之方式進行塗敷；其含有鋁-矽合金粉末、玻璃粉末及有機媒劑。 The paste-like composition is a conductive paste-like composition, and the conductive paste-like composition is applied to the back passivation film 3 by forming the n-type electrode 6 and the p-type electrode 7 and Coating is performed by a contact hole formed on the back surface passivation film 3 and a surface of the n-type germanium semiconductor substrate 1, that is, each surface of the n + diffusion region 4 and the p + diffusion region 5 is electrically contacted (ohmic contact); Contains aluminum-bismuth alloy powder, glass powder and organic vehicle.
糊膏狀組成物中所含之鋁-矽合金粉末於藉由對糊膏狀組成物進行焙燒而形成之n型用電極6與p型用電極7中發揮導電性。又，藉由使糊膏狀組成物中含有鋁-矽合金粉末，可防止鋁向n型矽半導體基板1內之擴散。 The aluminum-rhenium alloy powder contained in the paste-like composition exhibits conductivity in the n-type electrode 6 and the p-type electrode 7 which are formed by firing the paste-like composition. Further, by including the aluminum-bismuth alloy powder in the paste composition, diffusion of aluminum into the n-type germanium semiconductor substrate 1 can be prevented.
構成鋁-矽合金粉末之鋁-矽合金粒子之形狀並無特別限定。構成鋁-矽合金粉末之鋁-矽合金粒子之平均粒徑較佳為1 μm以上且10 μm以下。若平均粒徑未滿1 μm，則有鋁-矽合金粒子彼此凝集之虞，因此於糊膏中之分散性惡化。若平均粒徑超過10 μm，則反應性降低。 The shape of the aluminum-bismuth alloy particles constituting the aluminum-bismuth alloy powder is not particularly limited. The average particle diameter of the aluminum-bismuth alloy particles constituting the aluminum-bismuth alloy powder is preferably 1 μm or more and 10 μm or less. When the average particle diameter is less than 1 μm, the aluminum-bismuth alloy particles are agglomerated, and the dispersibility in the paste is deteriorated. When the average particle diameter exceeds 10 μm, the reactivity is lowered.
又，鋁-矽合金粉末較佳為包含過共晶組成之鋁-矽合金，具體而言，含有矽12質量%以上且30質量%以下。若鋁-矽合金粉末中之矽含量未滿12質量%，則鋁自焙燒後所形成之n型用電極6與p型用電極7擴散至n型矽半導體基板1中，破壞p-n接面。又，若矽含量超過30質量%，則n型用電極6與p型用電極7之電阻增加。 Further, the aluminum-bismuth alloy powder is preferably an aluminum-bismuth alloy containing a hypereutectic composition, and specifically contains ruthenium of 12% by mass or more and 30% by mass or less. When the niobium content in the aluminum-niobium alloy powder is less than 12% by mass, the n-type electrode 6 and the p-type electrode 7 formed by the aluminum self-baking are diffused into the n-type tantalum semiconductor substrate 1 to break the p-n junction. In addition, when the cerium content exceeds 30% by mass, the electric resistance of the n-type electrode 6 and the p-type electrode 7 increases.
進而，構成鋁-矽合金粉末之粒子較佳為具有球狀或鱗片狀之形狀，尤佳為具有鱗片狀之形狀。藉由構成鋁-矽合金粉末之粒子具有鱗片狀之形狀，其與n型矽半導體基板1之接觸面積變大，可進一步降低接觸電阻。於此情形時，構成鋁-矽合金粉末之粒子較佳為具有短徑與長徑，且長徑相對於短徑之比率為1以上且100以下。 Further, the particles constituting the aluminum-bismuth alloy powder preferably have a spherical or scaly shape, and particularly preferably have a scaly shape. Since the particles constituting the aluminum-bismuth alloy powder have a scaly shape, the contact area with the n-type germanium semiconductor substrate 1 becomes large, and the contact resistance can be further reduced. In this case, the particles constituting the aluminum-bismuth alloy powder preferably have a short diameter and a long diameter, and the ratio of the long diameter to the short diameter is 1 or more and 100 or less.
玻璃粉末可視為具有有助於鋁粉末與矽之反應、及鋁粉末本身之燒結的作用。 The glass powder can be regarded as having a function of contributing to the reaction of the aluminum powder with cerium and the sintering of the aluminum powder itself.
作為玻璃粉末，可含有選自由鉛(Pb)、鉍(Bi)、釩(V)、硼(B)、矽(Si)、錫(Sn)、磷(P)、及鋅(Zn)所組成之群中之一種或兩種以上。又，可使用含鉛之玻璃粉末，或鉍系、釩系、錫-磷系、硼矽酸鋅系、鹼性硼矽酸系等之無鉛玻璃粉末。尤其若考慮對人體之影響，則較理想為使用無鉛之玻璃粉末。 The glass powder may be selected from the group consisting of lead (Pb), bismuth (Bi), vanadium (V), boron (B), bismuth (Si), tin (Sn), phosphorus (P), and zinc (Zn). One or more of the group. Further, a lead-containing glass powder or a lead-free glass powder such as a lanthanum, vanadium, tin-phosphorus, zinc borosilicate or alkaline borosilicate may be used. Especially in consideration of the influence on the human body, it is preferable to use a lead-free glass powder.
又，玻璃粉末之軟化點較佳為750℃以下。 Further, the softening point of the glass powder is preferably 750 ° C or lower.
進而，構成玻璃粉末之玻璃粒子之平均粒徑較佳為1μm以上且3μm以下。 Further, the average particle diameter of the glass particles constituting the glass powder is preferably 1 μm or more and 3 μm or less.
再者，本發明之糊膏狀組成物中所含之玻璃粉末的含有比率並無特別限定，相對於鋁-矽合金粉末100質量份，較佳為0.5質量份以上且40質量份以下。若玻璃粉末之含有比率相對於鋁-矽合金粉末100質量份未滿0.5質量份，則與n型矽半導體基板1及背面鈍化膜3之密接性降低，若超過40質量份，則n型用電極6與p型用電極7之電阻增加。 In addition, the content ratio of the glass powder contained in the paste-like composition of the present invention is not particularly limited, and is preferably 0.5 parts by mass or more and 40 parts by mass or less based on 100 parts by mass of the aluminum-bismuth alloy powder. When the content ratio of the glass powder is less than 0.5 part by mass based on 100 parts by mass of the aluminum-bismuth alloy powder, the adhesion to the n-type germanium semiconductor substrate 1 and the back surface passivation film 3 is lowered, and if it exceeds 40 parts by mass, the n-type is used. The electric resistance of the electrode 6 and the p-type electrode 7 is increased.
作為有機媒劑，使用溶劑中可視需要溶解有各種添加劑及樹脂者。作為溶劑，可使用公知者，具體而言，可列舉：二乙二醇單丁醚、二乙二醇單丁醚乙酸酯、二丙二醇單甲醚等。作為各種添加劑，例如可使用：抗氧化劑、腐蝕抑制劑、消泡劑、增黏劑(tackifier)、偶合劑、靜電賦予劑、聚合抑制劑、觸變劑、防沈澱劑等。具體而言，例如可使用：聚乙二醇酯化合物、聚乙二醇醚化合物、聚氧乙烯山梨醇酐酯化合物、山梨醇酐烷基酯化合物、脂肪族多元羧酸化合物、磷酸酯化合物、聚酯酸之醯胺胺鹽、氧化聚乙烯系化合物、脂肪酸醯胺 蠟等。作為樹脂，可使用公知者，可將乙基纖維素、硝化纖維素、聚乙烯丁醛、酚系樹脂、黑色素樹脂、脲樹脂、二甲苯樹脂、醇酸樹脂、不飽和聚酯樹脂、丙烯酸系樹脂、聚醯亞胺樹脂、呋喃樹脂、胺基甲酸乙酯樹脂、異氰酸酯化合物、氰酸酯化合物等熱硬化樹脂、聚乙烯、聚丙烯、聚苯乙烯、ABS(Acrylonitrile-Butadiene-Styrene，丙烯腈-丁二烯-苯乙烯)樹脂、聚甲基丙烯酸甲酯、聚氯乙烯、聚偏二氯乙烯、聚乙酸乙烯酯、聚乙烯醇、聚縮醛、聚碳酸酯、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚苯醚、聚碸、聚醯亞胺、聚醚碸、聚芳酯、聚醚醚酮、聚四氟乙烯、矽樹脂等之兩種以上組合使用。作為本發明之糊膏狀組成物中所含之有機媒劑，亦可不溶解於溶劑中而使用樹脂。 As the organic vehicle, those which dissolve various additives and resins as needed may be used. As the solvent, a known one can be used, and specific examples thereof include diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and dipropylene glycol monomethyl ether. As the various additives, for example, an antioxidant, a corrosion inhibitor, an antifoaming agent, a tackifier, a coupling agent, an electrostatically-imparting agent, a polymerization inhibitor, a thixotropic agent, an anti-precipitation agent, or the like can be used. Specifically, for example, a polyethylene glycol ester compound, a polyethylene glycol ether compound, a polyoxyethylene sorbitan ester compound, a sorbitan alkyl ester compound, an aliphatic polycarboxylic acid compound, a phosphate compound, or the like can be used. Polyamidoamine amine salt, oxidized polyethylene compound, fatty acid guanamine Wax and so on. As the resin, a known one can be used, and ethyl cellulose, nitrocellulose, polyvinyl butyral, phenol resin, melanin resin, urea resin, xylene resin, alkyd resin, unsaturated polyester resin, acrylic acid can be used. Thermosetting resin such as resin, polyimine resin, furan resin, urethane resin, isocyanate compound, cyanate compound, polyethylene, polypropylene, polystyrene, ABS (Acrylonitrile-Butadiene-Styrene, acrylonitrile) -butadiene-styrene) resin, polymethyl methacrylate, polyvinyl chloride, polyvinylidene chloride, polyvinyl acetate, polyvinyl alcohol, polyacetal, polycarbonate, polyethylene terephthalate Diester, polybutylene terephthalate, polyphenylene ether, polyfluorene, polyimine, polyether oxime, polyarylate, polyetheretherketone, polytetrafluoroethylene, oxime resin, etc. use. The organic vehicle contained in the paste composition of the present invention may be used without being dissolved in a solvent.
再者，本發明之糊膏狀組成物中所含之有機媒劑的含有比率並無特別限定，相對於鋁-矽合金粉末100質量份，較佳為30質量份以上且100質量份以下。若有機媒劑之含有比率相對於鋁-矽合金粉末100質量份未滿30質量份或超過100質量份，則有糊膏狀組成物之印刷性降低之虞。 In addition, the content ratio of the organic vehicle contained in the paste-like composition of the present invention is not particularly limited, and is preferably 30 parts by mass or more and 100 parts by mass or less based on 100 parts by mass of the aluminum-bismuth alloy powder. When the content ratio of the organic vehicle is less than 30 parts by mass or more than 100 parts by mass based on 100 parts by mass of the aluminum-bismuth alloy powder, the printability of the paste-like composition is lowered.
以下，對本發明之實施例及比較例進行說明。 Hereinafter, examples and comparative examples of the present invention will be described.
以如下方式準備實施例1~3及比較例1~3之糊膏狀組成物。 The paste compositions of Examples 1 to 3 and Comparative Examples 1 to 3 were prepared in the following manner.
相對於球狀之鋁-15質量%矽合金粉末100質量份，添加玻璃粉末7.5質量份、及有機媒劑70質量份，利用周知之混合機進行混合。 7.5 parts by mass of a glass powder and 70 parts by mass of an organic vehicle were added to 100 parts by mass of the spherical aluminum- 15 mass% niobium alloy powder, and the mixture was mixed by a well-known mixer.
相對於鱗片狀之鋁-15質量%矽合金粉末100質量份，添加玻璃粉末7.5質量份、及有機媒劑70質量份，利用周知之混合機進行混合。 7.5 parts by mass of a glass powder and 70 parts by mass of an organic vehicle were added to 100 parts by mass of the scale-like aluminum - 15% by mass of the niobium alloy powder, and the mixture was mixed by a well-known mixer.
相對於球狀之鋁-25質量%矽合金粉末100質量份，添加玻璃粉末7.5質量份、及有機媒劑70質量份，利用周知之混合機進行混合。 7.5 parts by mass of the glass powder and 70 parts by mass of the organic vehicle were added to 100 parts by mass of the spherical aluminum--25 mass% niobium alloy powder, and the mixture was mixed by a well-known mixer.
相對於球狀之鋁-10質量%矽合金粉末100質量份，添加玻璃粉末7.5質量份、及有機媒劑70質量份，利用周知之混合機進行混合。 7.5 parts by mass of the glass powder and 70 parts by mass of the organic vehicle were added to 100 parts by mass of the spherical aluminum--10 mass% niobium alloy powder, and the mixture was mixed by a well-known mixer.
相對於球狀之鋁-32質量%矽合金粉末100質量份，添加玻璃粉末7.5質量份、及有機媒劑70質量份，利用周知之混合機進行混合。 To 100 parts by mass of the spherical aluminum-32 mass% bismuth alloy powder, 7.5 parts by mass of a glass powder and 70 parts by mass of an organic vehicle were added, and the mixture was mixed by a well-known mixer.
相對於矽之含量為0質量%之球狀之鋁粉末100質量份，添加玻璃粉末7.5質量份、及有機媒劑70質量份，利用周知之混合機進行混合。 To 100 parts by mass of the spherical aluminum powder having a cerium content of 0% by mass, 7.5 parts by mass of the glass powder and 70 parts by mass of the organic vehicle were added, and the mixture was mixed by a well-known mixer.
如圖2與圖3所示，首先，於預先形成有n+擴散區域4之厚度為180 μm之n型矽半導體基板1上，使用網版印刷機，按厚度20 μm、 寬度500 μm、長度30 mm之線狀圖案8以線間隔成為1 mm之方式等間隔地塗佈上述中所得之實施例1~3及比較例1~3的各糊膏狀組成物。並且，將塗佈有糊膏狀組成物之n型矽半導體基板1於100℃之溫度下乾燥10分鐘之後，將聚焦爐(image furnace)(ULVAC股份有限公司製造，型號：VHC-610CP)之爐內溫度設定為560℃，進行焙燒。藉由該焙燒，如圖3所示般形成n型用電極6。 As shown in FIG. 2 and FIG. 3, first, on a n-type germanium semiconductor substrate 1 having a thickness of 180 μm in which the n + diffusion region 4 is formed in advance, a screen printing machine is used, and the thickness is 20 μm, the width is 500 μm, and the length is used. Each of the paste-like compositions of Examples 1 to 3 and Comparative Examples 1 to 3 obtained above was applied at equal intervals so that the linear pattern of 30 mm was 1 mm. Further, the n-type germanium semiconductor substrate 1 coated with the paste-like composition was dried at a temperature of 100 ° C for 10 minutes, and then an image furnace (manufactured by ULVAC Co., Ltd., model: VHC-610CP) was used. The furnace temperature was set to 560 ° C and calcination was carried out. By this baking, the n-type electrode 6 is formed as shown in FIG.
以上述方式製作實施例1~3及比較例1~3之焙燒基板之試樣。 Samples of the calcined substrates of Examples 1 to 3 and Comparative Examples 1 to 3 were produced in the above manner.
使用日置電機股份有限公司製造之電阻測定器(製品名：mΩ HiTESTER 3540)測定所獲得之焙燒基板之各試樣的電阻，藉由TLM(Transmission Line method，傳輸線法)法算出n型用電極6與n型矽半導體基板1之接觸電阻。 The resistance of each sample of the obtained fired substrate was measured using a resistance measuring instrument (product name: mΩ HiTESTER 3540) manufactured by Hioki Electric Co., Ltd., and the n-type electrode 6 was calculated by a TLM (Transmission Line Method) method. Contact resistance with the n-type germanium semiconductor substrate 1.
又，利用光學顯微鏡(200倍)觀察各試樣之剖面，對n型矽半導體基板1上是否形成有鋁-矽合金層進行評價。將n型矽半導體基板1之表面上未形成鋁-矽合金層者評價為「○」，將形成有鋁-矽合金層者評價為「△」，將整體地形成有鋁-矽合金層者評價為「×」。 Further, the cross section of each sample was observed with an optical microscope (200 times), and whether or not an aluminum-bismuth alloy layer was formed on the n-type germanium semiconductor substrate 1 was evaluated. The aluminum-bismuth alloy layer was not formed on the surface of the n-type germanium semiconductor substrate 1 as "○", and the aluminum-bismuth alloy layer was evaluated as "△", and the aluminum-bismuth alloy layer was integrally formed. The evaluation is "X".
將以上之評價結果示於表1。 The above evaluation results are shown in Table 1.
根據表1可知，若使用以鋁粉末中含有矽12質量%以上且30質量%以下之鋁-矽合金粉末為主成分的實施例1~3之糊膏狀組成物形成n型用電極6，則鋁不於n型矽半導體基板1中擴散，且可降低與n型矽半導體基板1之接觸電阻。尤其可知，若使用以包含具有鱗片狀之形狀之粒子之鋁-矽合金粉末為主成分的實施例3之糊膏狀組成物形成n型用電極6，則可進一步降低與n型矽半導體基板1之接觸電阻。 According to Table 1, it is understood that the n-type electrode 6 is formed by using the paste-like composition of Examples 1 to 3 containing aluminum-niobium alloy powder containing 12% by mass or more and 30% by mass or less of aluminum in the aluminum powder as a main component. Then, aluminum is not diffused in the n-type germanium semiconductor substrate 1, and the contact resistance with the n-type germanium semiconductor substrate 1 can be lowered. In particular, when the n-type electrode 6 is formed using the paste-like composition of the third embodiment containing the aluminum-niobium alloy powder having a scaly shape as a main component, the n-type germanium semiconductor substrate can be further reduced. 1 contact resistance.
應認為，以上所揭示之實施形態及實施例於所有方面均為例示而並非限制。本發明之範圍並非以上之實施形態及實施例，而意指由申請專利範圍所表示，並包括與申請專利範圍均等之含義及範圍內之所有修正及變形。 The embodiments and examples disclosed above are to be considered as illustrative and not restrictive. The scope of the present invention is defined by the scope of the claims and the scope of the invention, and all modifications and variations within the meaning and scope of the claims.
藉由使用本發明之糊膏狀組成物，可不使用銀作為用以形成與太陽電池中之p型擴散區域及n型擴散區域電性接觸之電極的導電成分，而使電極之耐環境性優異，並且防止導電成分向矽基板之擴散，且降低與矽基板之接觸電阻。 By using the paste-like composition of the present invention, it is possible to make the electrode excellent in environmental resistance without using silver as a conductive component for forming an electrode which is in electrical contact with the p-type diffusion region and the n-type diffusion region in the solar cell. And preventing the diffusion of the conductive component to the germanium substrate and reducing the contact resistance with the germanium substrate.
1‧‧‧n型矽半導體基板 1‧‧‧n type germanium semiconductor substrate
2‧‧‧受光面鈍化膜 2‧‧‧Lighted passivation film
3‧‧‧背面鈍化膜 3‧‧‧Back passivation film
4‧‧‧n+擴散區域 4‧‧‧n + diffusion area
5‧‧‧p+擴散區域 5‧‧‧p + diffusion zone
6‧‧‧n型用電極 6‧‧‧n type electrode
7‧‧‧p型用電極 7‧‧‧p type electrode
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| WO2017051775A1 (en) | 2015-09-24 | 2017-03-30 | 東洋アルミニウム株式会社 | Paste composition and method for forming silicon germanium layer |
| JP6195597B2 (en) * | 2015-09-29 | 2017-09-13 | 東洋アルミニウム株式会社 | Paste composition |
| JP6713747B2 (en) * | 2015-10-14 | 2020-06-24 | 京都エレックス株式会社 | Resistor paste composition and heating resistor using the same |
| JP6762848B2 (en) * | 2016-11-02 | 2020-09-30 | 東洋アルミニウム株式会社 | Paste composition |
| JP7173960B2 (en) * | 2017-03-27 | 2022-11-16 | 東洋アルミニウム株式会社 | Solar cell paste composition |
| JP7193393B2 (en) * | 2019-03-26 | 2022-12-20 | 東洋アルミニウム株式会社 | Solar cell manufacturing method |
| JP7303036B2 (en) * | 2019-06-21 | 2023-07-04 | 東洋アルミニウム株式会社 | Conductive paste and method for producing TOPCon type solar cell |
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| TW200905900A (en) * | 2007-05-07 | 2009-02-01 | Georgia Tech Res Inst | Formation of high quality back contact with screen-printed local back surface field |
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| WO2010125728A1 (en) * | 2009-04-29 | 2010-11-04 | 三菱電機株式会社 | Solar cell and method of producing same |
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