JPS629680A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPS629680A JPS629680A JP60148303A JP14830385A JPS629680A JP S629680 A JPS629680 A JP S629680A JP 60148303 A JP60148303 A JP 60148303A JP 14830385 A JP14830385 A JP 14830385A JP S629680 A JPS629680 A JP S629680A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- solar cell
- heat treatment
- layer
- lifetime
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は太陽電池の製造方法に係り、特に太陽電池の裏
面ｐ＋層形成材料により高い変換効率を得ることができ
る太陽電池の製造方法に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for manufacturing a solar cell, and in particular to a method for manufacturing a solar cell that can obtain high conversion efficiency using a material forming a p+ layer on the back side of the solar cell. be.
従来から効率の良イｆ３ ｆ３ ｐ （１３ａｃｋ ３
ｕｒｆａｃｅＦｉｅｌｄ）構造の太陽電池が用いられて
いるが、この糧の太陽電池の製造は特開昭５９−２７５
７９号公報に記載のように、第３図の工程説明図の如き
工程を経て行なわれている。すなわち、（へ）のようＫ
ｐ型シリコンウェハ１に対し、燐等の不純物を拡散させ
ることにより、（ロ）の如くｐ型シリコンウェハの表面
にｎ０層２を形成してｐｎ９ｎ９層得る。次にＣうの如
く裏面側にＡｔペースト３をスクリーンに印刷し、５ｏ
ｏｃ〜ｐ＋０Ｃの温度にて。Traditionally efficient f3 f3 p (13ack 3
A solar cell with surface field) structure is used, but the manufacturing of this type of solar cell was disclosed in Japanese Patent Application Laid-Open No. 59-275.
As described in Japanese Patent No. 79, this process is carried out through steps as shown in the process diagram of FIG. In other words, K like (to)
By diffusing impurities such as phosphorus into the p-type silicon wafer 1, an n0 layer 2 is formed on the surface of the p-type silicon wafer as shown in (b), thereby obtaining a pn9n9 layer. Next, print At paste 3 on the screen on the back side like C, and 5 o
At a temperature of oc~p+0C.
焼成し、に）の如くｐ層に隣接したｐ＋層を形成しＢＳ
Ｆ構造とする。その後、端面でリーク電流が流れるのを
防ぐ几めに、受光面周囲にエツチング等でスリットｓｔ
−設け、受光面のｎ０層と側面のｎ０層を分離する。ま
た、Ａｌペースト酸化層１ａが除去され、に）〜（ト）
の如く裏面電極２、表面電極３、反射防止膜４等が形成
され喪太陽電池となる。BS
F structure. After that, in order to prevent leakage current from flowing at the end face, slits are etched around the light receiving surface.
- Separate the n0 layer on the light-receiving surface and the n0 layer on the side surface. Also, the Al paste oxide layer 1a is removed, and
A back electrode 2, a front electrode 3, an anti-reflection film 4, etc. are formed as shown in FIG. 2 to form a solar cell.
このように従来法にあってｆｌ、ＢＳＦ形成時のＡｔペ
ースト３の焼成温度が８００Ｃ〜ｐ＋０Ｃと高温で熱処
理をしているため、太陽電池の変換効率に重大な影響を
与える基板の少数キャリアライフタイムの低下を引き起
こし、また、製造エネルギーの消費が大きかった。In this way, in the conventional method, the firing temperature of the At paste 3 during the formation of fl and BSF is heat treated at a high temperature of 800C to p+0C, which reduces the minority carrier life of the substrate, which has a significant impact on the conversion efficiency of the solar cell. This caused a reduction in manufacturing time and also consumed a large amount of manufacturing energy.
本発明の目的ｆ１．ＢｓＦ形成用のＡｔペーストに８ｉ
を加えることにより、Ａｔ−８！ペーストとして、共晶
温度を下げ、従ってプロセス上の熱処理温度を６５０Ｃ
〜７５０Ｃまで下げることにより、基板の少数キャリア
のライフタイム低下をおさえ、製造エネルギーも少い高
効率な太陽電池の製造方法ｔ−提供することにある。Objective of the invention f1. 8i in At paste for BsF formation
By adding At-8! As a paste, it lowers the eutectic temperature and therefore the heat treatment temperature in the process to 650C.
It is an object of the present invention to provide a highly efficient solar cell manufacturing method that suppresses the lifetime of minority carriers in the substrate by lowering the temperature to ~750C and requires less manufacturing energy.
太陽電池の高効率化の重要な要素の一つとして基板の少
数キャリアのライフタイム（以後τとする）がある。こ
れは、１！池特性の中でも％ＫＪｓｃ（短絡電流密度）
に関連があり、高効率化のためには、τのできるだけ大
きい基板を用い、しかも太陽電池セル製造プロセスにお
いて、この低下をできるだけおさえる必要がある。基板
ライフタイムτとＪｍｃ の関係の実測値の一例を第４
図に示す。一方Ａｔペーストにより８８Ｆを形成した太
陽電池に関しては、焼成温度として５ｏｏｃ以上を要す
るが、この温度τに対する影響を実験的に調査し九とこ
ろ第５図に示すような結果が得られた。すなわち８００
Ｃ以上の熱処理温度でτが急激に低下しており、高効率
化に関してマイナス要因となっている。One of the important factors for increasing the efficiency of solar cells is the lifetime of minority carriers in the substrate (hereinafter referred to as τ). This is 1! Among the battery characteristics, %KJsc (short circuit current density)
In order to achieve high efficiency, it is necessary to use a substrate with as large a value of τ as possible, and to suppress this decrease as much as possible in the solar cell manufacturing process. An example of the actual measured value of the relationship between board lifetime τ and Jmc is shown in the fourth example.
As shown in the figure. On the other hand, solar cells formed with 88F using At paste require a firing temperature of 5 ooc or more, but the influence of this temperature τ was experimentally investigated and the results shown in FIG. 5 were obtained. i.e. 800
At a heat treatment temperature of C or higher, τ decreases rapidly, which is a negative factor in terms of achieving high efficiency.
本発明は、ＡｔとＳｉ合金の共晶温度がＡｔ単体の共晶
温度６６０ＣＫ対し５７７Ｃと８３Ｃも低い点に着目し
く第２図にＡｌ−８ｉの状態図を示す）、Ａｔペースト
の代わりに、Ａｔ−８ｉペーストヲ用いることにより、
熱処理温度を下げることによるライフタイム低下防止、
さらには特性向上が可能なことを見出し九ものである。The present invention focuses on the fact that the eutectic temperature of the At and Si alloy is lower than the eutectic temperature of At alone, 660CK, at 577C and 83C (see the phase diagram of Al-8i in Figure 2), and instead of the At paste, By using At-8i paste,
Preventing lifetime reduction by lowering heat treatment temperature,
Furthermore, we have found that it is possible to improve the characteristics.
以下本発明の一実施例を第１図に示す太陽電池の断面構
造図により説明する。同図において、ｐ型シリコン基板
１１ｆ：用意し、燐拡散又は燐イオン打込み法によ９１
０層１２ｔ−形成し、例えば８ｉが１２ｗｔＬｓ含有す
るＡｔ−８ｉペース）１３ｔｌ−スクリーン印刷後６５
０Ｃ〜７５０ＣにてＮ！中又はＡｒ中にて５分間熱処理
を行いｐ、６層１４を形成しＢ８Ｆ構造とする。但し、
イオン打込み法の場合はこの熱処理とｎ０層１２形成の
熱処理を同時に行ってもよい。次に’ｉ’ ｉ ０２
、８ｎＯｚ等の反射防止膜１ｓｔ−形成し、Ａｇペース
ト等よシなる裏面電極１６、受光面電極１７がスフ１７
＋ン印刷され、Ｎ３中にて６００Ｃ前後で焼成され太
陽電池となる。An embodiment of the present invention will be described below with reference to a cross-sectional structural diagram of a solar cell shown in FIG. In the same figure, a p-type silicon substrate 11f: prepared and 91
0 layer 12t-formed, e.g. At-8i pace with 8i containing 12wtLs) 13tl-65 after screen printing
N at 0C~750C! A heat treatment is performed for 5 minutes in medium or Ar to form a p,6 layer 14, resulting in a B8F structure. however,
In the case of the ion implantation method, this heat treatment and the heat treatment for forming the n0 layer 12 may be performed simultaneously. Next 'i' i 02
, 8nOz or the like is formed, and the back electrode 16 and the light receiving surface electrode 17 are made of Ag paste or the like.
The solar cell is printed and fired in N3 at around 600C.
上記のようにして得られ九太陽電池につき、光電変換特
性を測定し九ところ、従来のＡｔペーストのみによる太
陽電池に比べて、下表の如く優れた結果が得られた。The photoelectric conversion characteristics of the nine solar cells obtained as described above were measured, and the results were superior to those of conventional solar cells using only At paste as shown in the table below.
第１表
本実施例によれば、８８Ｆ形成の熱処理温度を低温化す
ることにより、ライフタイムの低下をおさえ、従来より
も変換効率を向上させることができる等の効果がある。Table 1 According to this example, by lowering the heat treatment temperature for 88F formation, there are effects such as suppressing a decrease in lifetime and improving conversion efficiency compared to the conventional method.
なお１本実施例においては５ｈｔ−ｓｔペーストにて８
１の含有量ｔ１２ｗｔ＊としであるが。In addition, in this example, 8
However, the content of 1 is t12wt*.
この量は８〜％ｗｔ＊の範囲から選ばれ比値でもよい。This amount may be selected from a range of 8 to %wt* and may be a ratio value.
を九Ａｔ−８ｉペーストは、Ａｔ−８ｉ共晶合金をペー
スト状にしたもの又は、Ａｔ粉末に３ｉ粉末を加えてペ
ースト状にし次ものから成る。9 At-8i paste is made by making At-8i eutectic alloy into a paste form or by adding 3i powder to At powder and making it into a paste form.
本発明によれば＊ Ａｔ ８ ｘペーストによる８８
Ｆ形成工程の熱処理温度を下げ、ライフタイム低下をお
さえることにより、太陽電池の変換効率を向上させるこ
とができ、さらに熱処理温度低温下による製造エネルギ
ーを節約できるので、電池特性向上に効果がある。According to the invention * 88 by At 8 x paste
By lowering the heat treatment temperature in the F formation step and suppressing the decrease in lifetime, it is possible to improve the conversion efficiency of the solar cell, and furthermore, it is possible to save manufacturing energy by lowering the heat treatment temperature, which is effective in improving battery characteristics.
第１図は本発明の一実施例によって得±太陽電池を示す
断面図、第２図はＡｔ−８１の状態図、第３図は従来の
太陽電池の製造工程を示す断面図、ＷＪ４図は、基板ラ
ギフタイムτと短絡電流密度Ｊｍｃの関係（実測値）を
示す図、第５図はＡｌペースト熱処理温度と基板ライフ
タイムτの関係（実測値）を示す図である。
１１・・・ｐ型シリコン基板、１２・・・ｎ０層、１３
・・・ｈｔ−ｓｔペースト、１４・・・ｐ４″層、１５
・・・反射防止膜、１６．１７・・・電極。Fig. 1 is a sectional view showing a solar cell obtained by an embodiment of the present invention, Fig. 2 is a state diagram of At-81, Fig. 3 is a sectional view showing the manufacturing process of a conventional solar cell, and Fig. WJ4 is a sectional view showing a solar cell obtained by an embodiment of the present invention. , a diagram showing the relationship (actually measured value) between the substrate life time τ and the short circuit current density Jmc, and FIG. 5 is a diagram showing the relationship (actually measured value) between the Al paste heat treatment temperature and the substrate lifetime τ. 11...p-type silicon substrate, 12...n0 layer, 13
...ht-st paste, 14...p4'' layer, 15
...Anti-reflection film, 16.17... Electrode.
Claims (1)
打込みにて形成し、受光面近くにｐｎ接合を形成し、裏
面側にＡｌペーストを設けて焼成しｐ＾＋層を形成する
太陽電池において、裏面側をＳｉを含むＡｌペースト材
で形成することを特徴とする太陽電池の製造方法。 ２、特許請求の範囲第１項において、ＡｌペーストはＳ
ｉの含有量が８〜１５ｗｔ％であることを特徴とする太
陽電池の製造方法。[Claims] 1. Form a thin n^+ layer on a p-type semiconductor substrate by diffusion or ion implantation, form a pn junction near the light-receiving surface, provide Al paste on the back side, and bake it. A method for manufacturing a solar cell, characterized in that in a solar cell forming a ^+ layer, the back side is formed of an Al paste material containing Si. 2. In claim 1, the Al paste is S
A method for manufacturing a solar cell, characterized in that the content of i is 8 to 15 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60148303A JPS629680A (en) | 1985-07-08 | 1985-07-08 | Manufacture of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60148303A JPS629680A (en) | 1985-07-08 | 1985-07-08 | Manufacture of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS629680A true JPS629680A (en) | 1987-01-17 |
Family
ID=15449768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60148303A Pending JPS629680A (en) | 1985-07-08 | 1985-07-08 | Manufacture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS629680A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179373A (en) * | 1988-01-06 | 1989-07-17 | Hitachi Ltd | Solar cell element |
| JP2001313402A (en) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | Paste material for solar battery |
| WO2002061854A3 (en) * | 2001-02-02 | 2003-12-11 | Shell Solar Gmbh | Method for structuring an oxide layer applied to a substrate material |
| JP2006261621A (en) * | 2005-02-21 | 2006-09-28 | Osaka Univ | Solar battery and its manufacturing method |
| JP2007266488A (en) * | 2006-03-29 | 2007-10-11 | Mitsubishi Electric Corp | Method for manufacturing solar cell |
| JP2010123999A (en) * | 2005-02-21 | 2010-06-03 | Osaka Univ | Paste material for solar battery and method for manufacturing solar battery |
| JP2010272890A (en) * | 2010-08-21 | 2010-12-02 | Kyocera Corp | Solar cell |
| JP5014350B2 (en) * | 2006-09-28 | 2012-08-29 | 京セラ株式会社 | Solar cell element and manufacturing method thereof |
| JP2013143499A (en) * | 2012-01-11 | 2013-07-22 | Toyo Aluminium Kk | Paste composition |
| WO2013115076A1 (en) * | 2012-02-02 | 2013-08-08 | 東洋アルミニウム株式会社 | Paste composition |
| WO2013126865A1 (en) * | 2012-02-24 | 2013-08-29 | Applied Nanotech Holdings, Inc. | Metallization paste for solar cells |
-
1985
- 1985-07-08 JP JP60148303A patent/JPS629680A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0573357B2 (en) * | 1988-01-06 | 1993-10-14 | Hitachi Ltd | |
| JPH01179373A (en) * | 1988-01-06 | 1989-07-17 | Hitachi Ltd | Solar cell element |
| JP2001313402A (en) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | Paste material for solar battery |
| WO2002061854A3 (en) * | 2001-02-02 | 2003-12-11 | Shell Solar Gmbh | Method for structuring an oxide layer applied to a substrate material |
| US7129109B2 (en) | 2001-02-02 | 2006-10-31 | Shell Solar Gmbh | Method for structuring an oxide layer applied to a substrate material |
| JP2006261621A (en) * | 2005-02-21 | 2006-09-28 | Osaka Univ | Solar battery and its manufacturing method |
| JP2010123999A (en) * | 2005-02-21 | 2010-06-03 | Osaka Univ | Paste material for solar battery and method for manufacturing solar battery |
| JP2007266488A (en) * | 2006-03-29 | 2007-10-11 | Mitsubishi Electric Corp | Method for manufacturing solar cell |
| JP5014350B2 (en) * | 2006-09-28 | 2012-08-29 | 京セラ株式会社 | Solar cell element and manufacturing method thereof |
| JP2010272890A (en) * | 2010-08-21 | 2010-12-02 | Kyocera Corp | Solar cell |
| JP2013143499A (en) * | 2012-01-11 | 2013-07-22 | Toyo Aluminium Kk | Paste composition |
| WO2013115076A1 (en) * | 2012-02-02 | 2013-08-08 | 東洋アルミニウム株式会社 | Paste composition |
| JPWO2013115076A1 (en) * | 2012-02-02 | 2015-05-11 | 東洋アルミニウム株式会社 | Paste composition |
| TWI578334B (en) * | 2012-02-02 | 2017-04-11 | 東洋鋁股份有限公司 | Paste composition |
| WO2013126865A1 (en) * | 2012-02-24 | 2013-08-29 | Applied Nanotech Holdings, Inc. | Metallization paste for solar cells |
| US9431552B2 (en) | 2012-02-24 | 2016-08-30 | Starsource Scientific Llc | Metallization paste for solar cells |
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