TWI574594B - A method of manufacturing a connecting structure and an anisotropic conductive adhesive - Google Patents

A method of manufacturing a connecting structure and an anisotropic conductive adhesive Download PDF

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Publication number
TWI574594B
TWI574594B TW102134263A TW102134263A TWI574594B TW I574594 B TWI574594 B TW I574594B TW 102134263 A TW102134263 A TW 102134263A TW 102134263 A TW102134263 A TW 102134263A TW I574594 B TWI574594 B TW I574594B
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Taiwan
Prior art keywords
anisotropic conductive
solder
conductive adhesive
terminal
electronic component
Prior art date
Application number
TW102134263A
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English (en)
Other versions
TW201414385A (zh
Inventor
Hidetsugu Namiki
Shiyuki Kanisawa
Akira Ishigami
Masaharu Aoki
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Dexerials Corp
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Publication of TW201414385A publication Critical patent/TW201414385A/zh
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Publication of TWI574594B publication Critical patent/TWI574594B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
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    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Description

連接結構體的製造方法及異向性導電接著劑
本技術涉及分散有導電性粒子的異向性導電接著劑、以及使用它之連接結構體的製造方法，尤其涉及一種能夠散發驅動IC(Integrated Circuit)、LED(Light Emitting Diode)等晶片(元件)所產生之熱的異向性導電接著劑、以及使用它的連接結構體的製造方法。
作為在基板構裝LED元件的工法，銲線工法被使用。除此之外，作為不使用銲線的工法，有建議使用導電膏的工法，而作為不使用導電膏的工法，有建議使用異向性導電接著劑的工法。
另外，用於構裝倒裝晶片(FC：Flip Chip)的LED元件已被開發，作為在基板上構裝該FC構裝用LED元件的工法，可以使用金錫共晶接合。除此之外，作為不使用金錫共晶接合的工法，有建議使用焊膏的焊接工法，而作為不使用焊膏的工法，有建議使用異向性導電接著劑的工法。
[專利文獻1]日本特開平11-4064號公報
[專利文獻2]日本特開昭60-178690號公報
[專利文獻3]日本特開平11-176879號公報
[專利文獻4]日本特開平8-186156號公報
[專利文獻5]日本特開2011-057917號公報
然而，因異向性導電接著劑之固化物之熱導率約為0.2W/(m．K)，不能充分地將LED元件產生的熱量釋放至基板側。另外，使用有異向性導電接著劑之構裝FC，因為僅電連接部分之導電性粒子成為散熱路徑，故散熱性差。
因此，最好能提供一種連接可靠性高且可獲得高散熱性的異向性導電接著劑、及連接結構體的製造方法。
在本技術中，發現藉由使用焊粒作為導電性粒子，且使用異向性導電接著劑在低於焊粒熔點的溫度下進行加熱按壓，可達到上述目的。
即，本技術之一種實施方式中的連接結構體的製造方法包含下述步驟：配置步驟：將含有熱固化性接著劑組成物及分散於該熱固化性接著劑組成物中之焊粒的異向性導電接著劑配置於第1電子零件之端子與第2電子零件之端子間，其中該熱固化性接著劑組成物含有環氧樹脂和酸酐；電連接步驟：係使用第1電子零件之端子及第2電子零件之端子中的任一者，在未達焊粒熔點的溫度下按壓異向性導電接著劑，使焊粒保持於第1電子零件之端子與第2電子零件之端子間，藉此使第1電子零件之端子與第2電子零件之端子藉由焊粒電連接。
另外，本技術之一種實施方式中的異向性導電接著劑含有：含有環氧樹脂及酸酐的熱固化性接著劑組成物、及分散於該熱固化性接著劑組成物中的焊粒，其中，分散有焊粒的熱固化性接著劑組成物在未達該焊粒熔點的溫度下被加熱。
根據本技術之一種實施方式中的連接結構體的製造方法或異向性導電接著劑，由於在未達焊粒熔點的溫度下按壓異向性導電接著劑，因此雖然焊粒的表面潤濕，但焊粒全體並未熔化。因此，可確保焊粒與端子表面的金屬結合，且具有接觸面積將不會不必要地增加的效果，從而防止熱循環試驗產生的裂紋等。另外，由金屬結合形成的接觸可發揮散熱路徑的作用。因此，可提供一種連接可靠性高、散熱性高、特別是有用於連接LED元件的連接結構體的製造方法。
11、101‧‧‧元件基板
12、102‧‧‧第1導電型被覆層
13、103‧‧‧活性層
14、104‧‧‧第2導電型被覆層
15、105‧‧‧鈍化層
21、201‧‧‧基材
22、202‧‧‧第1導電型用電路圖案
23、203‧‧‧第2導電型用電路圖案
31‧‧‧焊粒
32‧‧‧白色無機粒子
33、305‧‧‧黏合劑
301‧‧‧銲線
302‧‧‧固晶材
303‧‧‧導電膏
304‧‧‧密封樹脂
圖1係表示本技術之一種實施方式中的LED構裝體之一實施例的剖面圖。
圖2係表示本技術之其他實施方式中的LED構裝體之一實施例的剖面圖。
圖3係表示使用銲線工法的LED構裝體之一實施例的剖面圖。
圖4係表示使用導電膏的LED構裝體之一實施例的剖面圖。
圖5係表示使用異向性導電接著劑的LED構裝體之一實施例的剖面圖。
圖6係表示藉由金錫共晶接合構裝FC構裝用LED而成的LED構裝體之一實施例的剖面圖。
圖7係表示藉由導電膏構裝FC構裝用LED而成的LED構裝體之一實施例的剖面圖。
圖8係表示異向性導電接著劑構裝FC構裝用LED而成的LED構裝體之一實施例的剖面圖。
後文將參照附圖按以下的順序詳細闡述本技術之一種實施方式。
1、異向性導電接著劑及其製造方法
2、連接結構體及其製造方法
3、實施例
<1.異向性導電接著劑及其製造方法>
本技術之一種實施方式中的異向性導電接著劑係在含有環氧樹脂及酸酐的黏合劑(接著劑成分的熱固化性接著劑組成物)中分散有焊粒之接著劑，其形狀有膏狀、膜狀等，可按使用目的適宜選擇。
在本技術之一種實施方式中，藉由使異向性導電接著劑具有後文所述之構成，在壓接時，焊粒在未達其熔點的溫度下被加熱加壓，所以雖然焊粒的表面潤濕，但焊粒全體並未熔化。因此，可確保焊粒與端子表面的金屬結合，且具有接觸面積將不會不必要地增加的效果，從而可防止由熱循環試驗產生的裂紋等。另外，藉由金屬結合而形成的接觸可發揮散熱路徑的作用。因此，可提供一種連接可靠性高、散熱性高、特別是有用於連接LED元件的連接結構體的製造方法。
有關焊粒之組成及形狀等例如由JIS Z 3282-1999所規定。作為焊粒的構成材料，可從Sn-Pb類、Pb-Sn-Sb類、Sn-Sb類、Sn-Pb-Bi類、Bi-Sn類、Sn-Cu類、Sn-Pb-Cu類、Sn-In類、Sn-Ag類、Sn-Pb-Ag類、Pb-Ag類等中，根據電極材料或連接條件等適宜選擇。另外，作為焊粒之形狀可從粒狀、鱗片狀等中適宜選擇。再者，焊粒也可為 了提高異向性而被塗佈絕緣層。
在本技術之一種實施方式中，雖然加熱按壓時的加熱溫度被設定為低於焊粒的熔點，但是該加熱按壓時的加熱溫度較佳為等於或大於熱固化性接著劑組成物的反應開始溫度。具體而言，若熱固化性接著劑組成物的反應溫度為一般的140℃~220℃時，則焊粒的熔點較佳選擇為210~250℃，更佳選擇為210~240℃。
在焊粒中，有所謂具有固相點和液相點的焊粒、及固相點和液相點實質一致而被理解為一個熔點的共晶焊粒。在本技術之一種實施方式中，雖然可使用該焊粒之任一種，但是當使用前一種焊粒時，在未達固相點的情況下加熱按壓，當使用後一種焊粒時，在未達共晶熔點的情況下加熱按壓。即，在本說明書中，焊粒的熔點係指在大氣壓力下固相(固體)的焊粒開始熔化的固相線溫度。
焊粒之平均粒徑(D50)較佳為1μm~20μm，更佳為2μm~10μm。另外，鑑於連接可靠性及絕緣可靠性，焊粒的摻合量較佳為異向性導電接著劑總量的1體積%~50體積%之範圍，特佳為3體積%~25體積%之範圍。焊粒的摻合量若在3體積%以上，則可確保連接可靠性及散熱性，若在25體積%以下，則可避免相鄰焊粒接觸所伴隨之短路等。
再者，作為導電性粒子，除焊粒之外，在不影響本技術的效果下，可以兼用在環氧樹脂、酚醛樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯並胍胺樹脂、二乙烯基苯類樹脂、苯乙烯類樹脂的表面覆蓋有Au、Ni、Zn等金屬的金屬塗層樹脂粒子。
另外，在本技術之一種實施方式的異向性導電接著劑(熱固 化性接著劑組成物)中較佳為分散有白色無機粒子。摻合白色無機粒子的目的不僅是為了賦予異向性導電接著劑光反射性，而且是為了多少提高一些異向性導電接著劑的導熱性。
作為白色無機粒子，可以使用金屬氧化物、金屬氮化物、金屬硫化物等無機微粒子，較佳為使用在自然光下呈現灰色到白色的粒子。具體而言，作為白色無機粒子，較佳使用從氧化鈦、氮化硼、氧化鋅、及氧化鋁等中選擇的各種粒子。
另外，白色無機粒子之熱導率較佳為10W/(m．K)以上。藉由使白色無機粒子之熱導率在10W/(m．K)以上，可提高連接結構體的散熱性。
白色無機粒子之形狀可以為球狀、鱗片狀、不規則狀、針狀等，但鑑於反射率，較佳為球狀或鱗片狀。白色無機粒子之平均粒徑(D50)若大於焊粒則將成為端子間連接的障礙，所以較佳為小於焊粒。具體而言，當白色無機粒子為球狀時，平均粒徑(D50)較佳為0.02μm~20μm，更較佳為0.2μm~10μm，進一步較佳為0.2μm~1.0μm。
另外，白色無機粒子的摻合量若太少，則沒有實現光反射性的效果，若太多，則將成為焊粒連接的障礙，所以較佳為異向性導電接著劑總量的1體積%~50體積%，更較佳為2體積%~25體積%。
作為熱固化性接著劑組成物，可以利用以往的異向性導電接著劑及異向性導電膜中使用的接著劑組成物。作為熱固化性接著劑組成物的實施例主劑，可列舉以脂環族環氧化合物、雜環環氧化合物、氫化環氧化合物等為主要成分的環氧固化類接著劑。
作為脂環族環氧化合物，可較佳地列舉在分子中具有兩個以上之環氧基實施例者。它們可以是液體狀態也可以是固體狀態。具體可列舉六氫雙酚A縮水甘油醚、3,4-環氧環己基甲基-3',4'-環氧環己基甲酸酯等。其中，從能確保適合於LED元件構裝等的固化物之光學透射性及具有優異的快速固化性而言，可較佳地使用3,4-環氧環己基甲基-3',4'-環氧環己基甲酸酯。
作為雜環環氧化合物實施例，可列舉具有三環的環氧化合物，特佳為列舉1,3,5-三(2,3-環氧丙基)-1,3,5-三-2,4,6-(1H，3H，5H)-三酮。
氫化環氧化合物可以使用上述脂環族環氧化合物及雜環環氧化合物的氫化產物，或其它公知的氫化環氧樹脂。
脂環族環氧化合物、雜環環氧化合物或氫化環氧化合物可以單獨使用，也可以併用兩種以上。另外，只要不損害本技術的效果，這些環氧化合物也可與其他環氧化合物併用。例如可列舉：雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、間甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲基雙酚F、三(羥苯基)甲烷、雙二甲苯酚(bixylenol)、苯酚酚醛清漆、甲酚酚醛清漆等多元酚與環氧氯丙烷反應生成的縮水甘油醚；甘油、新戊二醇、乙二醇、丙二醇、己二醇、聚乙二醇、聚丙二醇等脂族多元醇與環氧氯丙烷反應生成的聚縮水甘油醚；如對-羥基苯甲酸、β-氧代-萘甲酸之類的羥基羧酸與環氧氯丙烷反應生成的縮水甘油醚酯；從鄰苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞 四氫鄰苯二甲酸、內亞六氫鄰苯二甲酸、偏苯三酸、聚合脂肪酸之類的聚羧酸獲得的聚縮水甘油酯；從氨基苯酚、氨基烷基苯酚獲得的縮水氨基縮水甘油醚；從氨基苯甲酸獲得的縮水氨基縮水甘油酯；從苯胺、甲苯胺、三溴苯胺、間苯二甲胺、二氨基環己烷、雙氨基甲基環己烷、4,4'-二氨基二苯基甲烷、4,4'-二氨基二苯基碸等獲得的縮水甘油氨；環氧化聚烯烴等公知的環氧樹脂類。
作為使主劑反應的固化劑實施例，可列舉酸酐、咪唑化合物、雙氰等。其中，可較佳地使用不易使固化物變色的酸酐，特別是脂環式酸酐類固化劑。具體可較佳地列舉甲基六氫鄰苯二甲酸酐等。
另外，酸酐可以對焊粒發揮助熔劑的功能，超過主劑之環氧樹脂的當量摻合酸酐也沒問題。具體而言，由反應之觀點而言，對於1.0當量的環氧樹脂摻合0.7當量~1.0當量的酸酐就足夠了，為了進一步發揮助熔劑的功能，較佳摻合1.0當量~1.3當量的酸酐。因此，對於1.0當量的環氧樹脂較佳為摻合0.7當量~1.3當量的酸酐。對於1.0當量的環氧樹脂也可摻合超過1.0當量的酸酐。
如此構成的異向性導電接著劑，加上後文所述的製造方法，可於保持端子間一定程度的接觸面積的同時，獲得高散熱性及高連接可靠性。
<2.連接結構體及其製造方法>
接下來，對使用了上述異向性導電接著劑之連接結構體進行說明。在本技術之一種實施方式之連接結構體中，第1電子零件之端子與第2電子零件之端子藉由在樹脂粒子的表面形成有導電性金屬層而成之導電性粒子 而進行電連接。在第1電子零件之端子與第2電子零件之端子之間，能捕捉(保持)到焊粒。
本技術之一種實施方式中的電子零件適用於發熱的驅動IC(Integrated Circuit)、LED(Light Emitting Diode)等晶片(元件)。
圖1係表示LED之構裝體之構成的剖面圖。在該LED構裝體中，使用在接著劑成分中分散有上述焊粒的異向性導電接著劑，將LED元件(第1電子零件)與搭載該LED元件的基板(第2電子零件)連接。
LED元件例如在由藍寶石形成的元件基板11上，具有例如由n-GaN形成的第1導電型被覆層12、例如由InxAlyGa1-x-yN層形成的活性層13及例如由p-GaN形成的第2導電型被覆層14，具有所謂的雙異質結構體。另外，在第1導電型被覆層12之一部分上具有第1導電型電極12a，在第2導電型被覆層14之一部分上具有第2導電型電極14a。當在LED元件之第1導電型電極12a與第2導電型電極14a之間施加電壓時，藉由載流子在活性層13中集中並再結合以致發光。
在基板中，基材21上具有第1導電型用電路圖案22及第2導電型用電路圖案23，在對應於LED元件之第1導電型電極12a及第2導電型電極14a處分別具有電極22a及電極23a。
異向性導電接著劑與上述相同，在黏合劑33中分散有焊粒31、白色無機粒子32。
如圖1所示，在LED構裝體中，LED元件之端子(電極12a、14a)與基板之端子(電極22a、23a)藉由焊粒31電連接。另外，在LED元件與基板之間，分散有白色無機粒子32。
因此，可有效地將LED元件之活性層13產生的熱量藉由焊粒31釋放至基板側，防止發光效率降低且可延長LED構裝體之使用壽命。另外，由於白色無機粒子32係白色或灰色的非彩色，可反射來自活性層13的光，獲得高亮度。
另外，如圖2所示，用於構裝倒裝晶片的LED元件由於藉由鈍化層15而可廣泛地設計LED元件之端子(電極12a、14a)，因此在LED元件之端子(電極12a、14a)與基板之端子(電路圖案22、23)間能捕捉到更多的焊粒31。因此，可更有效地將LED元件之活性層13產生的熱量釋放至基板側。
另外，LED元件之端子(12a、14a)及基板之端子(22、23)的材料，因需與焊粒共晶結合，分別較佳為金(Au)或金-錫合金(AuSn)。具體而言，LED元件之端子(12a、14a)及基板之端子(22、23)較佳為都含有金。其中，更較佳為LED元件之端子(12a、14a)為金-錫合金、且基板之端子(22、23)為金。
接下來，對上述連接結構體之製造方法進行說明。本技術之一種實施方式之構裝體之製造方法具有下述步驟：配置步驟：將在含有環氧樹脂及酸酐的熱固化性接著劑組成物中分散有上述焊粒的異向性導電接著劑配置於第1電子零件之端子與第2電子零件之端子間；按壓步驟：使用第1電子零件之端子及第2電子零件之端子中之任一者，在既定之加熱溫度下按壓異向性導電接著劑，使焊粒在第1電子零件之端子與第2電子零件之端子間被捕捉的。在按壓步驟中，利用第1電子零件及第2電子零件並使用加熱頭等加熱工具加熱按壓異向性導電接著劑。
利用該加熱按壓使焊粒在第1電子零件之端子與第2電子零件之端子間被捕捉時，藉由使該加熱溫度未達焊粒之熔點，以使焊粒不會整體熔化地與各端子接觸。更具體而言，加熱溫度較佳為在熱固化性接著劑組成物的反應開始溫度以上，且比焊粒之熔點低15℃的溫度以下。因此，焊粒與端子的接觸面積將不會不必要地增加，從而防止由熱循環試驗產生的裂紋等。
再者，當僅使用加熱工具時，可將加熱工具的溫度近似地當作加熱按壓時的加熱溫度。另外，當配置有連接結構體的台被加熱時，因為施加於異向性導電接著劑的溫度有可能高於加熱工具的溫度，所以不將加熱工具的溫度作為標準，較佳為使用熱電偶等測量儀器對被加熱之異向性導電接著劑的溫度進行直接測量。
再者，作為不使用上述本技術之一種實施方式中的連接結構體的製造方法及異向性導電接著劑的方法及其問題，如下所述。
作為在基板構裝LED元件的工法，使用銲線(WB：Wire Bonding)工法。如圖3所示，WB工法係將LED元件之電極(第1導電型電極104a及第2導電型電極102a)面朝上(Face up)，使用銲線(WB)301a、301b對該LED元件與基板進行電氣接合，使用固晶材302對該LED元件與基板進行黏合。
然而，像這種用銲線進行電連接的方法，由於有來自電極(第1導電型電極104a及第2導電型電極102a)的銲線之物理斷裂、剝落的風險，因此要求更高更可靠的技術。再者，固晶材302之固化過程因使用烘箱固化，需要很長的生產時間。
作為不使用銲線的工法，如圖4所示，有將LED元件之電極(第1導電型電極104a及第2導電型電極102a)面朝向基板側(面朝下、倒裝晶片)，使用以銀膏為代表的導電膏303(303a、303b)對該LED元件與基板進行電連接的方法。
但是，因為導電膏303(303a、303b)之黏合力弱，需用密封樹脂304進行加固。再者，密封樹脂304之固化過程因使用烘箱固化，需要很長的生產時間。
作為不使用導電膏的工法，如圖5所示，有將LED元件之電極面朝向基板側(面朝下、倒裝晶片)，使用在絕緣接著劑黏合劑305中分散有導電性粒子306的異向性導電接著劑對該LED元件與基板進行電連接及黏合的方法。因為異向性導電接著劑之黏合過程短，故生產效率好。另外，異向性導電接著劑價格低廉，且具有優異的透明性、黏合性、耐熱性、機械強度、電氣絕緣性等。
此外，用於構裝倒裝晶片(FC：Flip Chip)的LED元件已被開發。該FC構裝用LED元件，因為藉由鈍化層105可較大地設計電極面積，故可進行無干擾構裝。另外，藉由在發光層下設置反射膜可使取光效率得到提高。
作為在基板構裝FC構裝用LED元件的工法，如圖6所示，可以使用金錫共晶接合。金錫共晶接合係藉由利用金錫合金307形成晶片電極，然後在基板塗佈助熔劑、搭載晶片並加熱，以使基板與電極共晶接合。但是，像這種焊接工法由於在加熱中發生晶片偏移或助熔劑沒有被洗淨而影響可靠性，故產量不好。另外需要高度的構裝技術。
作為不使用金錫共晶的工法，如圖7所示，有使用焊膏對LED元件與基板進行電連接的焊接工法。但是，像這種焊接工法因為該膏具有等向性的導電性，故pn電極間將發生短路導致產量不好。
作為不使用焊膏的工法，如圖8所示，有使用與圖5相同的在絕緣性黏合劑中分散有導電性粒子的ACF(Anisotropic conductive film)等異向性導電接著劑對LED元件與基板進行電連接及黏合的方法。使用異向性導電接著劑時，pn電極之間被填充有絕緣性黏合劑。於是，因不易發生短路可提高產量。另外，由於黏合過程短，故生產效率良好。
然而，LED元件之活性層(交界處)103除了光之外還產生大量的熱量，若發光層溫度(Tj=交界處溫度)達到100℃以上，則LED之發光效率降低，LED之壽命變短。因此，需要一個能有效地釋放活性層103之熱量的結構。
在圖3所示的WB構裝中，由於活性層103處於LED元件之上方，產生的熱量不能有效地傳遞至基板側，故散熱性差。
此外，若如圖4、圖6及圖7所示構裝倒裝晶片，由於活性層103處於基板側，熱能有效地傳遞至基板側。如圖4及圖7所示，在電極間用導電膏303(303a、303b)接合時，雖可高效率地放熱，但利用導電膏303(303a、303b)進行的連接如上所述連接可靠性差。另外，如圖6所示，即使進行金錫共晶接合，也與上述相同，連接可靠性差。
另外，如圖5及圖8所示，不使用導電膏303(303a、303b)而藉由使用ACF及ACP(Anisotropic Conductive Paste)等異向性導電接著劑構裝倒裝晶片，可使活性層103配置於基板側附近，有效地將熱量傳遞至 基板側。另外，因為黏合力強，可得到高連接可靠性。
另外，作為與焊膏類似的技術，可以將作為導電性粒子的焊粒摻合於異向性導電接著劑中。
另外，為了有效地利用入射至黏合層內部的光，可以藉由使LED元件中所使用之異向性導電接著劑含有白色無機粒子，來使該光反射從而提高LED元件的總光束量。
若在異向性導電接著劑中使用焊粒，不僅可確保連接可靠性，還可期望確保散熱性。然而，若將焊粒整體熔化，則焊粒與端子的接觸面積將不必要地增加，在此狀態下進行熱循環試驗，將有裂紋等缺陷發生。
另外，使異向性導電接著劑含有白色無機粒子時，含有白色無機粒子的異向性導電接著劑的熱導率為10W/(m．K)，因具有較高的熱導率，可期望提高散熱性。但是，若白色無機粒子之粒徑等於或大於導電性粒子之粒徑，將成為LED元件之端子與基板之端子間接觸不良的原因。另外，若白色無機粒子之粒徑小，則因為端子間彼此未接觸而不能成為散熱路徑。其結果，現實為若想要確保連接可靠性，則白色無機粒子就無法促進散熱。
【實施例】
<3.實施例>
下文將詳細闡述本技術之實施例，但本技術不限於這些實施例。
[異向性導電接著劑的製作]
在實施例1~3及比較例2、3中，將作為白色無機粒子的表面塗有Si 及Al的平均粒徑為0.5μm的氧化鈦(產品名：JR，Tayca股份有限公司製造)、及焊粒(M707，千住金屬股份有限公司製造)分散於環氧樹脂固化型接著劑中，製成所需異向性導電接著劑。
再者，上述焊粒的成分為Sn-3.0Ag-0.5Cu，其熔點(固相點)為217℃。另外，白色無機粒子的折射率為2.71。此外，在環氧樹脂固化型接著劑中，脂環族環氧樹脂(產品名：CEL2021P，Daicel化學股份有限公司製造)及酸酐(MH700，新日本理化股份有限公司製造)分別以1.0：1.1的當量比摻合。
在實施例4中，除了替換焊粒(M10，千住金屬股份有限公司製造)之外，使用與實施例1相同的方法製成異向性導電接著劑。此處，焊粒的成分為Sn-5.0Sb，其熔點(固相點)為240℃。
在實施例5中，除了沒有摻合白色無機粒子之外，使用與實施例1相同的方法製成異向性導電接著劑。
在比較例1中，除了使用導電性粒子(對丙烯酸樹脂粒子進行0.2μm無電解鍍金而形成的粒子，日本化學工業公司製造)代替焊粒之外，使用與實施例1相同的方法製成異向性導電接著劑。
在比較例2中，除了沒有使用酸酐之外，使用與實施例1相同的方法製成異向性導電接著劑。
比較例3中的異向性導電接著劑的組成雖與實施例1相同，但如後文所述，差異處在於加熱按壓時的溫度高於焊粒之熔點。
[異向性導電接著劑的光反射率的測量]
將上述各種異向性導電接著劑以乾燥後的厚度為100μm的方式塗佈 於陶瓷製的白色板，然後在200℃加熱1分鐘使其固化。接著，使用分光光度計(U3300，日立製作所(股份有限公司))測量該固化物對波長為450nm之光的反射率(JIS K7150)。將所得結果示於表1。實際使用時反射率在30%以上是理想的。
[LED構裝體的製作]
使用實施例1、2、4、5及比較例1~3中的異向性導電接著劑將不需要Au凸塊的倒裝晶片用LED晶片(藍色LED、Vf=3.2V(If=350mA))安裝在Au電極基板。將異向性導電接著劑塗佈於Au電極基板後，對準安裝LED晶片，藉由改變加熱頭的溫度(180℃，200℃，220℃，260℃)，在60秒-1kg/chip的條件下進行加熱壓接。再者，根據加熱頭的溫度使用熱電偶測量器(產品名：數據記錄器，Graphtec公司製造)對異向性導電接著劑的溫度進行直接測量。
另外，使用凹凸焊接機形成Au凸點後，進行平坦化處理以用作Au電極基板(環氧玻璃基板、導電空間=100μm、Ni/Au鍍敷=5.0μm/0.3μm、金凸點=15μm)。
將所得LED構裝體的散熱特性、光學特性、黏合性、及電氣特性示於表1。再者，各測量方法如下。
此外，在實施例3中，將具備AuSn凸塊的LED晶片安裝在Au電極基板。
[散熱性的評價]
使用瞬態熱阻測量裝置(CATS電子設計公司製造)測量LED構裝體之熱阻(℃/W)。測量條件為If=200mA(恆定電流控制)。
[光學特性的評價]
使用積分球原理的總光束測量裝置(LE-2100、大塚電子股份有限公司製造)測量LED構裝體之總光束量(mlm)。測量條件為If=200mA(恆定電流控制)。
[黏合特性的評價(剪切強度(Die shear))]
測量晶片/異向性導電接著劑/基板的剪切強度。剪切強度係指將構裝好的LED晶片往橫向拉引，當晶片脫落時所測量到的強度。在25℃的測量環境下，以20μm/sec的測量速度進行測量。測量裝置使用黏合測量器(Bond Tester)PTR-1100(Resuka公司製造)。
[電氣特性的評價]
(導電特性)
作為初期Vf值，測量了If=20mA時的Vf值。另外，在-40℃/30分鐘<>100℃/30分鐘的條件下進行1000次熱衝擊試驗，測量了If=20mA時的Vf值。熱衝擊試驗的初期如下進行評價：確認到有導電被切斷之情形(OPEN)時，評價為“×”，其他則評價為“○”。熱衝擊試驗後如下進行評價：比初期Vf值高5%以上之情形時為導電NG，評價為“×”，，其他則評價為“○”。再者，“○”係指良，“×”係指不良。
(絕緣特性)
測量在施加5V反向電壓時的初期Ir值，若Ir=1μA以上則為漏電NG，評價為“×”，其他則評價為“○”。
在表1中表示實施例1~5、及比較例1~3的評價結果。
在實施例1中，在以環氧樹脂(CEL2021P)及酸酐(MH700)為主要成分的黏合劑中，混合焊粒(粒徑10μm，mp217℃)及白色無機粒子，獲得了在450nm的光照下反射率為65%的異向性導電接著劑。在比焊粒之熔點低的溫度200℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍Au的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。該LED模組的總光束量為9lm，電連接部分的熱阻值為15K/W，剪切強度為50N/1mm□。觀察LED模組之電連接部分的剖面之結果，確認到LED晶片側電極與焊粒、及基板側電極與焊粒發生Au-Su共晶結合，且焊粒沒有粉碎擴散，並保持著黏合層的厚度。另外，LED模組的初期導電特性、初期絕緣特性良好，在TCT試驗(-40~100)中也獲得了穩定的導電特性。
在實施例2中，在以環氧樹脂(CEL2021P)及酸酐(MH700)為主要成分的黏合劑中，混合焊粒(粒徑10μm，mp217℃)及白色無機粒子，獲得了在450nm的光照下反射率為65%的異向性導電接著劑。在比焊粒之熔點低的溫度180℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍Au的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。該LED模組的總光束量為9lm，電連接部分的熱阻值為15K/W，剪切強度為50N/1mm□。觀察LED模組之電連接部分的剖面之結果，確認到LED晶片側電極與焊粒、及基板側電極與焊粒發生Au-Su共晶結合，且焊粒沒有粉碎擴散，並保持著黏合層的厚度。另外，LED模組的初期導電特性、初期絕緣特性良好，在TCT試驗(-40~100)中也獲得了穩定的導電特性。
在實施例3中，在以環氧樹脂(CEL2021P)及酸酐(MH700)為主要成分的黏合劑中，混合焊粒(粒徑10μm，mp217℃)及白色無機粒子，獲得了在450nm的光照下反射率為65%的異向性導電接著劑。在比焊粒之熔點低的溫度180℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍AuSn的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。該LED模組的總光束量為9lm，電連接部分的熱阻值為15K/W，剪切強度為45N/1mm□。觀察LED模組之電連接部分的剖面之結果，確認到LED晶片側電極與焊粒、及基板側電極與焊粒發生Au-Su共晶結合，且焊粒沒有粉碎擴散，並保持著黏合層的厚度。另外，LED模組的初期導電特性、初期絕緣特性良好，在TCT試驗(-40~100)中也獲得了穩定的導電特性。
在實施例4中，在以環氧樹脂(CEL2021P)及酸酐(MH700)為主要成分的黏合劑中，混合焊粒(粒徑10μm，mp240℃)及白色無機粒子，獲得了在450nm的光照下反射率為60%的異向性導電接著劑。在比焊粒之熔點低的溫度220℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍Au的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。該LED模組的總光束量為8.5lm，電連接部分的熱阻值為14K/W，剪切強度為40N/1mm□。觀察LED模組之電連接部分的剖面之結果，確認到LED晶片側電極與焊粒、及基板側電極與焊粒發生Au-Su共晶結合，且焊粒沒有粉碎擴散，並保持著黏合層的厚度。另外，LED模組的初期導電特性、初期絕緣特性良好，在TCT試驗(-40~100)中也獲得了穩定的導電特性。
在實施例5中，在以環氧樹脂(CEL2021P)及酸酐(MH700)為主要成分的黏合劑中，混合焊粒(粒徑10μm，mp240℃)，獲得了在450nm的光照下反射率為8%的異向性導電接著劑。在比焊粒之熔點低的溫度180℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍Au的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。雖然該LED模組的總光束量較低為5lm，但電連接部分的熱阻值為15K/W，剪切強度為50N/1mm□。觀察LED模組之電連接部分的剖面之結果，確認到LED晶片側電極與焊粒、及基板側電極與焊粒發生Au-Su共晶結合，且焊粒沒有粉碎擴散，並保持著黏合層的厚度。另外，LED模組的初期導電特性、初期絕緣特性良好，在TCT試驗(-40~100)中也獲得了穩定的導電特性。
在比較例1中，在以環氧樹脂(CEL2021P)及酸酐(MH700)為主要成分的黏合劑中，混合導電性粒子(粒徑10μm，以樹脂為芯表面鍍Au的粒子)及白色無機粒子，獲得了在450nm的光照下反射率為55%的異向性導電接著劑。在比焊粒之熔點低的溫度180℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍Au的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。雖然該LED模組的總光束量為7lm，但電連接部分的熱阻值高達30K/W，剪切強度低至20N/1mm□。另外，LED模組的初期導電特性、初期絕緣特性良好，在TCT試驗(-40~100)中也獲得了穩定的導電特性。
在比較例2中，在以環氧樹脂(CEL2021P)及胺類固化劑為主要成分的黏合劑中，混合焊粒(粒徑10μm，mp217℃)及白色無機粒 子，獲得了在450nm的光照下反射率為65%的異向性導電接著劑。在比焊粒之熔點低的溫度180℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍Au的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。雖然該LED模組的總光束量為9lm，但電連接部分的熱阻值高達25K/W，剪切強度低至20N/1mm□。觀察LED模組之電連接部分的剖面之結果，確認到LED晶片側電極與焊粒、及基板側電極與焊粒沒有發生Au-Su共晶結合。結果LED模組的初期導電特性、初期絕緣特性雖然良好，但在TCT試驗(-40~100)時經過1000cycle後發生了導電OPEN。
在比較例3中，在以環氧樹脂(CEL2021P)及酸酐(MH700)為主要成分的黏合劑中，混合焊粒(粒徑10μm，mp217℃)及白色無機粒子，獲得了在450nm的光照下反射率為65%的異向性導電接著劑。在比焊粒之熔點高的溫度260℃下，使用該異向性導電接著劑對「於LED晶片側電極實施有鍍Au的LED晶片」與「於基板側電極實施有鍍Au的基板」進行加熱壓接、電連接，從而獲得LED模組。結果LED模組的初期導電特性發生了短路。另外，觀察LED模組之電連接部分的剖面之結果，確認到焊粒熔化並擴散至PN電極之間。
如上所述，可知作為將LED元件之電極與基板之電極進行電連接的方法，可以使用含有焊粒的異向性導電接著劑，在低於焊粒熔點的溫度下進行加熱按壓，藉此製造具有高散熱特性及高黏合特性的LED模組。另外，發現加熱溫度與焊粒熔點在實施例1~4中相差17℃、20℃、37℃，即加熱溫度與焊粒熔點的差在15℃以上即可。另外，發現實施例1~4 中的LED晶片的連接結構體，由於摻合了白色無機粒子，反射率高，因此光學特性得到了提高。此外，發現在實施例1~5中，因為使用酸酐作為固化劑，而酸酐除了固化主劑之環氧樹脂外，還有助熔劑的功能，所以與沒有摻合酸酐的比較例2相比，可以獲得高黏合特性。
另外，本技術也可以採用以下構成。
(1)
連接結構體的製造方法包含：配置步驟：將含有熱固化性接著劑組成物及分散於該熱固化性接著劑組成物中之焊粒的該異向性導電接著劑配置於第1電子零件之端子與第2電子零件之端子間，其中，該熱固化性接著劑組成物含有環氧樹脂和酸酐；電連接步驟：使用該第1電子零件之端子及該第2電子零件之端子中的任一者，在未達該焊粒熔點的溫度下按壓該異向性導電接著劑，使該焊粒保持於該第1電子零件之端子與該第2電子零件之端子間，藉此使該第1電子零件之端子與該第2電子零件之端子藉由該焊粒電連接。
(2)
(1)中所述的連接結構體的製造方法，其中，該溫度比該焊粒之熔點低15℃以上。
(3)
(1)至(2)中所述的任一連接結構體的製造方法，其中，該溫度在該熱固化性接著劑組成物的反應開始溫度以上。
(4)
(1)至(3)中所述的任一連接結構體的製造方法，其中，該焊粒之熔點約為210℃~250℃。
(5)
(1)至(4)中所述的任一連接結構體的製造方法，其中，該熱固化性接著劑組成物中分散有白色無機粒子。
(6)
(5)中所述的連接結構體的製造方法，其中，該白色無機粒子之熱導率約為10W/(m．K)以上。
(7)
(1)至(6)中所述的任一連接結構體的製造方法，其中，該第1電子零件為LED元件，該第2電子零件為搭載該LED元件的基板。
(8)
(7)中所述的連接結構體的製造方法，其中，該LED元件之端子含有金，該基板之端子含有金。
(9)
(8)中所述的連接結構體的製造方法，其中，該LED元件之端子為金錫合金，該基板之端子為金。
(10)
異向性導電接著劑含有：含有環氧樹脂及酸酐的熱固化性接著劑組成物、分散於該熱固化性接著劑組成物中的焊粒；分散有該焊粒的該熱固化性接著劑組成物在未達該焊粒熔點的溫度下被加熱。
(11)
(10)中所述的異向性導電接著劑，其中，該熱固化性接著劑組成物中分散有白色無機粒子。
(12)
(11)中所述的異向性導電接著劑，其中，該白色無機粒子之平均粒徑約為0.2μm~10μm，該白色無機粒子之含有量約為該異向性導電接著劑總量的1體積%~50體積%；該焊粒之平均粒徑約為1μm~20μm，該焊 粒之含有量約為該異向性導電接著劑總量的1體積%~50體積%；相對於1.0當量的該環氧樹脂含有0.7當量~1.3當量的酸酐。
(13)
(12)中所述的異向性導電接著劑，其中，相對於1.0當量的該環氧樹脂含有超過1.0當量的酸酐。
本申請案以2012年9月24日於日本專利局申請之日本專利申請案2012-210225為基礎主張優先權，且參照該案之全部內容而引用至本申請案中。
只要為該行業者，根據設計要求及其他因素所作之各種修改，組合，子組合及變更，皆應涵蓋於附加之申請專利範圍及其等效物之範疇內。
12‧‧‧第1導電型被覆層
12a‧‧‧第1導電型電極
13‧‧‧活性層
14‧‧‧第2導電型被覆層
14a‧‧‧第2導電型電極
21‧‧‧基材
22‧‧‧第1導電型用電路圖案
22a‧‧‧電極
23‧‧‧第2導電型用電路圖案
23a‧‧‧電極
31‧‧‧焊粒
32‧‧‧白色無機粒子
33‧‧‧黏合劑

Claims (13)

  1. 一種連接結構體的製造方法，其包含下述步驟：配置步驟：將含有熱固化性接著劑組成物及分散於該熱固化性接著劑組成物中之焊粒的異向性導電接著劑配置於第1電子零件之端子與第2電子零件之端子間，其中，該熱固化性接著劑組成物含有環氧樹脂和酸酐；電連接步驟：使用該第1電子零件之端子及該第2電子零件之端子中的任一者，在未達該焊粒熔點的溫度下按壓該異向性導電接著劑，使該焊粒保持於第1電子零件之端子與該第2電子零件之端子間，藉此使該第1電子零件之端子與該第2電子零件之端子藉由該焊粒電連接。
  2. 如申請專利範圍第1項之連接結構體的製造方法，其中，該溫度比該焊粒之熔點低15℃以上。
  3. 如申請專利範圍第1項之連接結構體的製造方法，其中，該溫度在該熱固化性接著劑組成物的反應開始溫度以上。
  4. 如申請專利範圍第1項之連接結構體的製造方法，其中，該焊粒之熔點約為210℃~250℃。
  5. 如申請專利範圍第1項之連接結構體的製造方法，其中，該熱固化性接著劑組成物中分散有白色無機粒子。
  6. 如申請專利範圍第5項之連接結構體的製造方法，其中，該白色無機粒子之熱導率約為10W/(m．K)以上。
  7. 如申請專利範圍第1項之連接結構體的製造方法，其中，該第1電子零件為LED元件，該第2電子零件為搭載該LED元件的基板。
  8. 如申請專利範圍第7項之連接結構體的製造方法，其中，該LED元 件之端子含有金，該基板之端子含有金。
  9. 如申請專利範圍第8項之連接結構體的製造方法，其中，該LED元件之端子為金錫合金，該基板之端子為金。
  10. 一種異向性導電接著劑，其含有：含有環氧樹脂及酸酐的熱固化性接著劑組成物、與分散於該熱固化性接著劑組成物中的焊粒；分散有該焊粒的該熱固化性接著劑組成物在未達該焊粒熔點的溫度下被加熱。
  11. 如申請專利範圍第10項之異向性導電接著劑，其中，該熱固化性接著劑組成物中分散有白色無機粒子。
  12. 如申請專利範圍第11項之異向性導電接著劑，其中，該白色無機粒子之平均粒徑約為0.2μm~10μm，該白色無機粒子之含有量約為該異向性導電接著劑總量的1體積%~50體積%；該焊粒之平均粒徑約為1μm~20μm，該焊粒之含有量約為該異向性導電接著劑總量的1體積%~50體積%；相對於1.0當量的該環氧樹脂含有0.7當量~1.3當量的該酸酐。
  13. 如申請專利範圍第12項之異向性導電接著劑，其中，相對於1.0當量的該環氧樹脂含有超過1.0當量的該酸酐。
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