TWI573238B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI573238B
TWI573238B TW102143651A TW102143651A TWI573238B TW I573238 B TWI573238 B TW I573238B TW 102143651 A TW102143651 A TW 102143651A TW 102143651 A TW102143651 A TW 102143651A TW I573238 B TWI573238 B TW I573238B
Authority
TW
Taiwan
Prior art keywords
range
protective
hole
conductive layer
semiconductor device
Prior art date
Application number
TW102143651A
Other languages
English (en)
Chinese (zh)
Other versions
TW201440190A (zh
Inventor
Kazuo Tomita
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW201440190A publication Critical patent/TW201440190A/zh
Application granted granted Critical
Publication of TWI573238B publication Critical patent/TWI573238B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5283Cross-sectional geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • H01L23/53295Stacked insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/564Details not otherwise provided for, e.g. protection against moisture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05541Structure
    • H01L2224/05548Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05567Disposition the external layer being at least partially embedded in the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13022Disposition the bump connector being at least partially embedded in the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226Via connections in a multilevel interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW102143651A 2013-01-11 2013-11-29 Semiconductor device TWI573238B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/050369 WO2014109044A1 (ja) 2013-01-11 2013-01-11 半導体装置

Publications (2)

Publication Number Publication Date
TW201440190A TW201440190A (zh) 2014-10-16
TWI573238B true TWI573238B (zh) 2017-03-01

Family

ID=51166713

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102143651A TWI573238B (zh) 2013-01-11 2013-11-29 Semiconductor device

Country Status (6)

Country Link
US (1) US9691719B2 (ko)
JP (1) JP6117246B2 (ko)
KR (1) KR20150106420A (ko)
CN (1) CN104919569B (ko)
TW (1) TWI573238B (ko)
WO (1) WO2014109044A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6362482B2 (ja) * 2014-08-28 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN104749846B (zh) * 2015-04-17 2017-06-30 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示面板
JP6745712B2 (ja) * 2016-11-30 2020-08-26 日東電工株式会社 配線回路基板およびその製造方法
EP3355355B1 (en) * 2017-01-27 2019-03-13 Detection Technology Oy Asymmetrically positioned guard ring contacts
JP6982976B2 (ja) 2017-04-19 2021-12-17 キヤノン株式会社 半導体デバイスの製造方法および半導体デバイス
JP6991816B2 (ja) * 2017-09-29 2022-01-13 キヤノン株式会社 半導体装置および機器
KR102442096B1 (ko) * 2017-11-22 2022-09-07 삼성전자주식회사 반도체 장치
KR102497570B1 (ko) * 2018-01-18 2023-02-10 삼성전자주식회사 반도체 장치
JP6559841B1 (ja) * 2018-06-01 2019-08-14 エイブリック株式会社 半導体装置
KR20210033581A (ko) * 2019-09-18 2021-03-29 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US11094650B1 (en) 2020-02-11 2021-08-17 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and method of making
CN115210873A (zh) * 2020-03-05 2022-10-18 索尼半导体解决方案公司 固态成像装置和电子装置
CN113053828B (zh) * 2021-03-12 2022-05-27 长鑫存储技术有限公司 密封环及其形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134506A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 半導体装置
JP2007227454A (ja) * 2006-02-21 2007-09-06 Toshiba Corp 半導体装置の製造方法
JP2008091893A (ja) * 2006-09-06 2008-04-17 Toshiba Corp 半導体装置
JP2012237933A (ja) * 2011-05-13 2012-12-06 Lapis Semiconductor Co Ltd フォトマスク、露光方法、及び半導体装置の製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136020A (ja) * 1991-11-11 1993-06-01 Fujitsu Ltd 半導体装置の露光方法
JP3150461B2 (ja) * 1992-12-17 2001-03-26 株式会社日立製作所 高集積電子回路装置とその製造方法
KR100244259B1 (ko) 1996-12-27 2000-03-02 김영환 반도체소자의 가드 링 형성방법
JP3370903B2 (ja) 1997-06-04 2003-01-27 松下電器産業株式会社 半導体装置製造用のフォトマスク群と、それを用いた半導体装置の製造方法
US6022791A (en) * 1997-10-15 2000-02-08 International Business Machines Corporation Chip crack stop
JP2002353307A (ja) * 2001-05-25 2002-12-06 Toshiba Corp 半導体装置
US6472740B1 (en) * 2001-05-30 2002-10-29 International Business Machines Corporation Self-supporting air bridge interconnect structure for integrated circuits
JP3538170B2 (ja) * 2001-09-11 2004-06-14 松下電器産業株式会社 半導体装置及びその製造方法
JP2003249640A (ja) * 2002-02-22 2003-09-05 Sony Corp 固体撮像素子の製造方法
JP4250006B2 (ja) * 2002-06-06 2009-04-08 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP3779243B2 (ja) * 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
JP2004153115A (ja) * 2002-10-31 2004-05-27 Canon Inc 半導体装置の製造方法
JP4360881B2 (ja) 2003-03-24 2009-11-11 Necエレクトロニクス株式会社 多層配線を含む半導体装置およびその製造方法
US7087452B2 (en) * 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP2005072214A (ja) * 2003-08-22 2005-03-17 Semiconductor Leading Edge Technologies Inc 荷電粒子線露光用マスク及び荷電粒子線露光方法
JP2005129717A (ja) 2003-10-23 2005-05-19 Renesas Technology Corp 半導体装置
JP2005142262A (ja) 2003-11-05 2005-06-02 Toshiba Corp 半導体装置および半導体装置の製造方法
CN1617312A (zh) * 2003-11-10 2005-05-18 松下电器产业株式会社 半导体器件及其制造方法
JP2005183600A (ja) * 2003-12-18 2005-07-07 Canon Inc 半導体装置、固体撮像装置、増幅型固体撮像装置、撮像システム、マスク装置、及び露光装置
JP2005209996A (ja) * 2004-01-26 2005-08-04 Semiconductor Leading Edge Technologies Inc ステンシルマスク及び半導体装置の製造方法
JP3890333B2 (ja) * 2004-02-06 2007-03-07 キヤノン株式会社 固体撮像装置
JP4280204B2 (ja) * 2004-06-15 2009-06-17 Okiセミコンダクタ株式会社 半導体装置
JP2006310446A (ja) 2005-04-27 2006-11-09 Canon Inc 半導体装置の製造方法、および露光装置
JP4699172B2 (ja) * 2005-10-25 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置
US20080099884A1 (en) * 2006-10-31 2008-05-01 Masahio Inohara Staggered guard ring structure
JP5220361B2 (ja) * 2007-07-31 2013-06-26 ルネサスエレクトロニクス株式会社 半導体ウエハおよび半導体装置の製造方法
JP2009284424A (ja) * 2008-05-26 2009-12-03 Sony Corp 撮像装置、撮像方法及びプログラム
JP5407422B2 (ja) 2009-02-27 2014-02-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP5792431B2 (ja) 2010-04-28 2015-10-14 日本電気株式会社 半導体装置の製造方法
JP5849478B2 (ja) * 2011-07-11 2016-01-27 富士通セミコンダクター株式会社 半導体装置および試験方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134506A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 半導体装置
JP2007227454A (ja) * 2006-02-21 2007-09-06 Toshiba Corp 半導体装置の製造方法
JP2008091893A (ja) * 2006-09-06 2008-04-17 Toshiba Corp 半導体装置
JP2012237933A (ja) * 2011-05-13 2012-12-06 Lapis Semiconductor Co Ltd フォトマスク、露光方法、及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20150357293A1 (en) 2015-12-10
US9691719B2 (en) 2017-06-27
JP6117246B2 (ja) 2017-04-19
CN104919569A (zh) 2015-09-16
TW201440190A (zh) 2014-10-16
WO2014109044A1 (ja) 2014-07-17
CN104919569B (zh) 2017-12-22
KR20150106420A (ko) 2015-09-21
JPWO2014109044A1 (ja) 2017-01-19

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