TWI573238B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TWI573238B TWI573238B TW102143651A TW102143651A TWI573238B TW I573238 B TWI573238 B TW I573238B TW 102143651 A TW102143651 A TW 102143651A TW 102143651 A TW102143651 A TW 102143651A TW I573238 B TWI573238 B TW I573238B
- Authority
- TW
- Taiwan
- Prior art keywords
- range
- protective
- hole
- conductive layer
- semiconductor device
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/050369 WO2014109044A1 (ja) | 2013-01-11 | 2013-01-11 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201440190A TW201440190A (zh) | 2014-10-16 |
TWI573238B true TWI573238B (zh) | 2017-03-01 |
Family
ID=51166713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102143651A TWI573238B (zh) | 2013-01-11 | 2013-11-29 | Semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US9691719B2 (ko) |
JP (1) | JP6117246B2 (ko) |
KR (1) | KR20150106420A (ko) |
CN (1) | CN104919569B (ko) |
TW (1) | TWI573238B (ko) |
WO (1) | WO2014109044A1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6362482B2 (ja) * | 2014-08-28 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN104749846B (zh) * | 2015-04-17 | 2017-06-30 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
JP6745712B2 (ja) * | 2016-11-30 | 2020-08-26 | 日東電工株式会社 | 配線回路基板およびその製造方法 |
EP3355355B1 (en) * | 2017-01-27 | 2019-03-13 | Detection Technology Oy | Asymmetrically positioned guard ring contacts |
JP6982976B2 (ja) | 2017-04-19 | 2021-12-17 | キヤノン株式会社 | 半導体デバイスの製造方法および半導体デバイス |
JP6991816B2 (ja) * | 2017-09-29 | 2022-01-13 | キヤノン株式会社 | 半導体装置および機器 |
KR102442096B1 (ko) * | 2017-11-22 | 2022-09-07 | 삼성전자주식회사 | 반도체 장치 |
KR102497570B1 (ko) * | 2018-01-18 | 2023-02-10 | 삼성전자주식회사 | 반도체 장치 |
JP6559841B1 (ja) * | 2018-06-01 | 2019-08-14 | エイブリック株式会社 | 半導体装置 |
KR20210033581A (ko) * | 2019-09-18 | 2021-03-29 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
US11094650B1 (en) | 2020-02-11 | 2021-08-17 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and method of making |
CN115210873A (zh) * | 2020-03-05 | 2022-10-18 | 索尼半导体解决方案公司 | 固态成像装置和电子装置 |
CN113053828B (zh) * | 2021-03-12 | 2022-05-27 | 长鑫存储技术有限公司 | 密封环及其形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134506A (ja) * | 2000-10-19 | 2002-05-10 | Mitsubishi Electric Corp | 半導体装置 |
JP2007227454A (ja) * | 2006-02-21 | 2007-09-06 | Toshiba Corp | 半導体装置の製造方法 |
JP2008091893A (ja) * | 2006-09-06 | 2008-04-17 | Toshiba Corp | 半導体装置 |
JP2012237933A (ja) * | 2011-05-13 | 2012-12-06 | Lapis Semiconductor Co Ltd | フォトマスク、露光方法、及び半導体装置の製造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05136020A (ja) * | 1991-11-11 | 1993-06-01 | Fujitsu Ltd | 半導体装置の露光方法 |
JP3150461B2 (ja) * | 1992-12-17 | 2001-03-26 | 株式会社日立製作所 | 高集積電子回路装置とその製造方法 |
KR100244259B1 (ko) | 1996-12-27 | 2000-03-02 | 김영환 | 반도체소자의 가드 링 형성방법 |
JP3370903B2 (ja) | 1997-06-04 | 2003-01-27 | 松下電器産業株式会社 | 半導体装置製造用のフォトマスク群と、それを用いた半導体装置の製造方法 |
US6022791A (en) * | 1997-10-15 | 2000-02-08 | International Business Machines Corporation | Chip crack stop |
JP2002353307A (ja) * | 2001-05-25 | 2002-12-06 | Toshiba Corp | 半導体装置 |
US6472740B1 (en) * | 2001-05-30 | 2002-10-29 | International Business Machines Corporation | Self-supporting air bridge interconnect structure for integrated circuits |
JP3538170B2 (ja) * | 2001-09-11 | 2004-06-14 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JP2003249640A (ja) * | 2002-02-22 | 2003-09-05 | Sony Corp | 固体撮像素子の製造方法 |
JP4250006B2 (ja) * | 2002-06-06 | 2009-04-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP3779243B2 (ja) * | 2002-07-31 | 2006-05-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2004153115A (ja) * | 2002-10-31 | 2004-05-27 | Canon Inc | 半導体装置の製造方法 |
JP4360881B2 (ja) | 2003-03-24 | 2009-11-11 | Necエレクトロニクス株式会社 | 多層配線を含む半導体装置およびその製造方法 |
US7087452B2 (en) * | 2003-04-22 | 2006-08-08 | Intel Corporation | Edge arrangements for integrated circuit chips |
JP2005072214A (ja) * | 2003-08-22 | 2005-03-17 | Semiconductor Leading Edge Technologies Inc | 荷電粒子線露光用マスク及び荷電粒子線露光方法 |
JP2005129717A (ja) | 2003-10-23 | 2005-05-19 | Renesas Technology Corp | 半導体装置 |
JP2005142262A (ja) | 2003-11-05 | 2005-06-02 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
CN1617312A (zh) * | 2003-11-10 | 2005-05-18 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
JP2005183600A (ja) * | 2003-12-18 | 2005-07-07 | Canon Inc | 半導体装置、固体撮像装置、増幅型固体撮像装置、撮像システム、マスク装置、及び露光装置 |
JP2005209996A (ja) * | 2004-01-26 | 2005-08-04 | Semiconductor Leading Edge Technologies Inc | ステンシルマスク及び半導体装置の製造方法 |
JP3890333B2 (ja) * | 2004-02-06 | 2007-03-07 | キヤノン株式会社 | 固体撮像装置 |
JP4280204B2 (ja) * | 2004-06-15 | 2009-06-17 | Okiセミコンダクタ株式会社 | 半導体装置 |
JP2006310446A (ja) | 2005-04-27 | 2006-11-09 | Canon Inc | 半導体装置の製造方法、および露光装置 |
JP4699172B2 (ja) * | 2005-10-25 | 2011-06-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20080099884A1 (en) * | 2006-10-31 | 2008-05-01 | Masahio Inohara | Staggered guard ring structure |
JP5220361B2 (ja) * | 2007-07-31 | 2013-06-26 | ルネサスエレクトロニクス株式会社 | 半導体ウエハおよび半導体装置の製造方法 |
JP2009284424A (ja) * | 2008-05-26 | 2009-12-03 | Sony Corp | 撮像装置、撮像方法及びプログラム |
JP5407422B2 (ja) | 2009-02-27 | 2014-02-05 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5792431B2 (ja) | 2010-04-28 | 2015-10-14 | 日本電気株式会社 | 半導体装置の製造方法 |
JP5849478B2 (ja) * | 2011-07-11 | 2016-01-27 | 富士通セミコンダクター株式会社 | 半導体装置および試験方法 |
-
2013
- 2013-01-11 US US14/760,473 patent/US9691719B2/en active Active
- 2013-01-11 JP JP2014556278A patent/JP6117246B2/ja not_active Expired - Fee Related
- 2013-01-11 WO PCT/JP2013/050369 patent/WO2014109044A1/ja active Application Filing
- 2013-01-11 KR KR1020157021077A patent/KR20150106420A/ko not_active Application Discontinuation
- 2013-01-11 CN CN201380070170.0A patent/CN104919569B/zh not_active Expired - Fee Related
- 2013-11-29 TW TW102143651A patent/TWI573238B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134506A (ja) * | 2000-10-19 | 2002-05-10 | Mitsubishi Electric Corp | 半導体装置 |
JP2007227454A (ja) * | 2006-02-21 | 2007-09-06 | Toshiba Corp | 半導体装置の製造方法 |
JP2008091893A (ja) * | 2006-09-06 | 2008-04-17 | Toshiba Corp | 半導体装置 |
JP2012237933A (ja) * | 2011-05-13 | 2012-12-06 | Lapis Semiconductor Co Ltd | フォトマスク、露光方法、及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20150357293A1 (en) | 2015-12-10 |
US9691719B2 (en) | 2017-06-27 |
JP6117246B2 (ja) | 2017-04-19 |
CN104919569A (zh) | 2015-09-16 |
TW201440190A (zh) | 2014-10-16 |
WO2014109044A1 (ja) | 2014-07-17 |
CN104919569B (zh) | 2017-12-22 |
KR20150106420A (ko) | 2015-09-21 |
JPWO2014109044A1 (ja) | 2017-01-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |